WO2021117834A1 - ポリウレタン、研磨層、研磨パッド及び研磨方法 - Google Patents

ポリウレタン、研磨層、研磨パッド及び研磨方法 Download PDF

Info

Publication number
WO2021117834A1
WO2021117834A1 PCT/JP2020/046159 JP2020046159W WO2021117834A1 WO 2021117834 A1 WO2021117834 A1 WO 2021117834A1 JP 2020046159 W JP2020046159 W JP 2020046159W WO 2021117834 A1 WO2021117834 A1 WO 2021117834A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
polyurethane
polishing layer
polished
carboxy group
Prior art date
Application number
PCT/JP2020/046159
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
梓紗 砂山
高岡　信夫
和正 服部
林　浩一
加藤　充
知大 岡本
晋哉 加藤
Original Assignee
株式会社クラレ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社クラレ filed Critical 株式会社クラレ
Priority to KR1020227019386A priority Critical patent/KR20220117220A/ko
Priority to CN202080085452.8A priority patent/CN114787225A/zh
Priority to JP2021564044A priority patent/JPWO2021117834A1/ja
Publication of WO2021117834A1 publication Critical patent/WO2021117834A1/ja

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/30—Low-molecular-weight compounds
    • C08G18/34—Carboxylic acids; Esters thereof with monohydroxyl compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/65—Low-molecular-weight compounds having active hydrogen with high-molecular-weight compounds having active hydrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a novel polyurethane, a polishing layer using the same, a polishing pad, and a polishing method.
  • polishing method for flattening the surface of the semiconductor wafer examples include CMP (Chemical Mechanical Polishing).
  • CMP is a method of polishing an object to be polished with high accuracy with a polishing pad while supplying a slurry containing abrasive grains and a reaction solution to the surface of the object to be polished.
  • the material constituting the polishing layer of the polishing pad used in this method include polyurethane having a closed cell structure.
  • Polyurethane having a closed cell structure is generally produced by casting foam curing using a two-component curable polyurethane (for example, Patent Documents 1 to 4).
  • a two-component curable polyurethane for example, Patent Documents 1 to 4.
  • the reaction and foaming uniform it is difficult to make the reaction and foaming uniform, and there is a limit to increasing the hardness of the obtained polyurethane, so that the polishing characteristics such as the flatness of the surface to be polished and the flattening efficiency are likely to fluctuate.
  • the foamed structure has independent holes, polishing slurry and polishing debris used in the polishing process easily invade the voids and become clogged, resulting in problems such as a decrease in polishing speed and a shortened pad life. ..
  • examples of the polyurethane constituting the polishing layer include those in which a non-woven fabric is impregnated with a polyurethane resin and solidified (for example, Patent Documents 5 to 7). Since such a non-woven fabric type polishing pad has an uneven structure, voids, and a communication hole structure due to the structure of the non-woven fabric, it is easy to improve the polishing rate because the slurry has a good liquid pooling property at the time of polishing, and it is flexible. Since it is high, it has a feature of good contact with a wafer.
  • Japanese Unexamined Patent Publication No. 2000-178374 Japanese Unexamined Patent Publication No. 2000-248034 Japanese Unexamined Patent Publication No. 2001-89548 Japanese Unexamined Patent Publication No. 11-322878 Japanese Unexamined Patent Publication No. 11-99479 Japanese Unexamined Patent Publication No. 2005-212055 Japanese Unexamined Patent Publication No. 3-234475
  • the liquid accumulation property of the slurry is good due to the uneven structure of the non-woven fabric, etc., while the hardness and elastic modulus of the polyurethane change due to the clogging of the abrasive grains in the unevenness, etc.
  • the wafer is easily scratched.
  • the stability of polishing is lowered due to a change in hardness or the like due to clogging, and the life of the polishing pad is shortened.
  • the present invention has been made in view of the above-mentioned conventional problems, and constitutes a polishing layer capable of stably polishing with a long life while suppressing the occurrence of scratches by suppressing clogging of the polishing layer. It is an object of the present invention to provide a polyurethane to be used, a polishing layer using the same, a polishing pad, and a polishing method.
  • the gist of the present invention is the following [1] to [10].
  • [1] Polyurethane having at least one structural unit derived from a compound having a carboxy group.
  • the above [1] contains at least a structural unit derived from the compound having a carboxy group, a structural unit derived from a chain extender, a structural unit derived from a polymer diol, and a structural unit derived from an organic diisocyanate. Described polyurethane.
  • [4] A polishing layer using the polyurethane according to any one of the above [1] to [3].
  • [5] The polishing layer according to the above [4], wherein the polishing layer is obtained by impregnating a non-woven fabric with the polyurethane and further solidifying the non-woven fabric.
  • [6] The polishing layer according to the above [4] or [5], wherein the zeta potential of the polyurethane constituting the polishing layer at pH 7.0 is -10.0 mV or less.
  • [7] The polishing layer according to any one of [4] to [6] above, wherein the polyurethane is a non-foaming material.
  • the polyurethane has a storage elastic modulus of 50 to 1,200 MPa and a contact angle with water of 80 degrees or less measured at 50 ° C. after being saturated and swollen with water at 50 ° C. 4]
  • the polishing layer according to any one of [7].
  • polyurethane constituting a polishing layer capable of stably polishing with a long life while suppressing the occurrence of scratches by suppressing clogging of the polishing layer, a polishing layer using the same, and polishing. Pads, as well as polishing methods, can be provided.
  • FIG. 1 is a schematic diagram for explaining the carboxy group present in the molecular structure of polyurethane with respect to the polyurethane of the present invention having a structural unit derived from dimethylolpropionic acid.
  • FIG. 2 is a schematic diagram for explaining a state in which the carboxy group is dissociated in FIG.
  • FIG. 3 is a schematic view for explaining the polishing method of the present invention.
  • FIG. 4 is a photograph showing the types of scratches (evaluation criteria) of the object to be polished in Examples and Comparative Examples.
  • the polyurethane of the present invention has at least one structural unit derived from a compound having a carboxy group. According to the present invention, since it has at least one structural unit derived from a compound having a carboxy group, the carboxy group is present in the molecular structure of polyurethane. When this is used as a material for the polishing layer of the polishing pad, the concavo-convex portion of the polishing layer is clogged with abrasive grains due to the repulsive force between the negative potential generated by the dissociation of the carboxy group and the negative potential of the abrasive grains. Is less likely to occur. Therefore, it is possible to suppress scratches caused by clogging and to stably polish with a long life. In the present invention, by adjusting the amount of carboxy groups present in the molecular structure of polyurethane, it is possible to impart not only the negative potential of the polyurethane surface but also properties such as hydrophilicity.
  • the polyurethane of the present invention can be produced, for example, by using a compound having a carboxy group in addition to the raw materials used for producing general polyurethane.
  • a compound having a carboxy group include dimethylolpropionic acid and the like, and by reacting this with a raw material such as a polymer diol or isocyanate, the molecular structure shown in the schematic diagram of FIG. 1 is shown.
  • a polyurethane having a carboxy group inside can be obtained. As described above, this carboxy group can improve the hydrophilicity of the surface of polyurethane and improve the wettability on the surface of polyurethane.
  • FIG. 2 is a diagram for explaining a state in which the carboxy group of polyurethane is dissociated in FIG.
  • the carboxy group dissociates into ⁇ COO ⁇ and H + as shown in FIG. 2, so that the surface of the polyurethane is negative due to ⁇ COO ⁇ .
  • the potential of can be imparted. Therefore, when the polyurethane of the present invention is used as the polishing layer, the carboxy group is dissociated when an alkaline slurry is used, and the zeta potential of the polishing layer becomes negative due to ⁇ COO ⁇ .
  • the abrasive grains in the alkaline slurry and the polyurethane are repelled by the repulsive force, so that the abrasive grains are less likely to be clogged in the uneven portion of the polishing layer, and as a result, the polishing efficiency is improved.
  • the polyurethane of the present invention is not particularly limited as long as it has at least one structural unit derived from a compound having a carboxy group, and may be a thermoplastic polyurethane or a thermosetting polyurethane.
  • Thermoplastic polyurethane is preferable because it can be continuously produced by melt polymerization and can be easily processed into a sheet when used as a polishing layer of a polishing pad.
  • the polyurethane of the present invention can be suitably used not only for the polishing layer of a polishing pad, but also for imparting hydrophilicity to the surface of polyurethane and for applications requiring modification of electrical properties and the like.
  • thermoplastic polyurethane will be described in detail as an example of the polyurethane of the present invention.
  • the thermoplastic polyurethane according to the present invention is, for example, from the viewpoint of ease of production, a structural unit derived from a compound having a carboxy group, a structural unit derived from a chain extender, a structural unit derived from a polymer diol, and an organic diisocyanate. It is preferable that the structural unit derived from the above is contained at least.
  • Compound having a carboxy group examples include a diol having a carboxy group, a diamine having a carboxy group, a polymer diol having a carboxy group, and derivatives thereof. Specific examples thereof include compounds represented by the following general formulas (1) to (3).
  • R 1 to R 6 each independently represent a hydroxyl group or an amino group, and R may each independently have a substituent and has 1 to 10 carbon atoms. Indicates a trivalent or aromatic hydrocarbon group of, and R'independently represents a divalent hydrocarbon group having 1 to 10 carbon atoms. L, m and n are integers of 1 to 10. Show.
  • Examples of such a compound having a carboxy group include dimethylolpropionic acid, dimethylolbutanoic acid, tartaric acid, 2-hydroxypropionic acid, malic acid, and 4-hydroxymethylbenzoic acid from the viewpoints of excellent reactivity and availability.
  • Examples include acid.
  • the compound represented by the formula (1) is preferable, and among the compounds represented by the formula (1), a compound in which R is a trivalent hydrocarbon group having 1 to 6 carbon atoms is more preferable, and the rigidity of the polishing layer is improved. From the viewpoint of expressing the characteristics of the zeta potential while ensuring it, dimethylol propionic acid and dimethylol butanoic acid are more preferable.
  • chain extender examples include compounds usually used in the production of polyurethane (excluding the compounds having a carboxy group). Specific examples thereof include low molecular weight compounds having two or more active hydrogen atoms capable of reacting with isocyanate groups and having a molecular weight of 300 or less and which do not contain dienophile or diene.
  • chain extender examples include ethylene glycol, diethylene glycol, 1,2-propanediol, 1,3-propanediol, 2,2-diethyl-1,3-propanediol, 1,2-butanediol, 1,3.
  • diols such as 1,4-butanediol and 1,5-pentanediol and diamines such as hydrazine are preferable from the viewpoint of improving the rigidity of the polishing layer.
  • the ratio (mol%) of the compound having a carboxy group to the total amount of the compound having a carboxy group and the chain extender is appropriately selected depending on the intended purpose, but is preferably 5 to 5 to, for example. It is 90 mol%, more preferably 10 to 70 mol%, still more preferably 15 to 60 mol%.
  • the content ratio of the compound having a carboxy group is within the above range, a negative potential that sufficiently repels the negative potential of the abrasive grains can be imparted to the polyurethane.
  • polymer diol Specific examples of the polymer diol include polyether diols, polyester diols, polycarbonate diols, and the like. These may be used alone or in combination of two or more. Among these, a polyether diol and a polycarbonate diol are preferable, and a polyether diol is more preferable, from the viewpoint of excellent availability and reactivity.
  • the number average molecular weight of the polymer diol is preferably 450 to 3,000, more preferably 500 to 2,700, and even more preferably 550 to 2,400. When the number average molecular weight of the polymer diol is within the above range, it is easy to obtain a polishing layer that maintains the required characteristics such as rigidity, hardness, and hydrophilicity.
  • the number average molecular weight of the polymer diol means the number average molecular weight calculated based on the hydroxyl value measured in accordance with JIS K 1557-1: 2007.
  • polyether diol examples include polyethylene glycol, polypropylene glycol, polytetramethylene glycol, poly (methyltetramethylene glycol), glycerin-based polyalkylene ether glycol, and the like. These may be used alone or in combination of two or more. Among these, polyethylene glycol and polytetramethylene glycol are preferable.
  • polyester diol in the present invention, polyester diol can be used.
  • the polyester diol can be obtained, for example, by directly subjecting an ester-forming derivative such as a dicarboxylic acid or an ester thereof or an anhydride to a low molecular weight diol by a transesterification reaction or a transesterification reaction.
  • dicarboxylic acid, its ester, and its anhydride for producing a polyesterdiol include, for example, oxalic acid, succinic acid, glutaric acid, adipic acid, pimeric acid, suberic acid, azelaic acid, sebacic acid, and the like.
  • An aliphatic dicarboxylic acid having 2 to 12 carbon atoms such as a diacid; a dimerated aliphatic dicarboxylic acid having 14 to 48 carbon atoms (dimeric acid) obtained by dimerizing an unsaturated fatty acid obtained by distilling a triglyceride, and hydrogenation thereof.
  • Examples thereof include aliphatic dicarboxylic acids such as substances (hydrogenated dimer acid); alicyclic dicarboxylic acids such as 1,4-cyclohexanedicarboxylic acid; aromatic dicarboxylic acids such as terephthalic acid, isophthalic acid and orthophthalic acid.
  • Specific examples of the dimer acid and the hydrogenated dimer acid include, for example, the trade names "Pripole 1004", “Pripole 1006", “Pripole 1009", and “Pripole 1013" manufactured by Unichema. These may be used alone or in combination of two or more.
  • the low molecular weight diol for producing the polyester diol include ethylene glycol, 1,3-propanediol, 1,2-propanediol, 2-methyl-1,3-propanediol, 1, and so on.
  • Alipid diols such as methyl-1,8-octanediol, 1,9-nonanediol and 1,10-decanediol; alicyclic diols such as cyclohexanedimethanol and cyclohexanediol can be mentioned. These may be used alone or in combination of two or more. Among these, a diol having 6 to 12 carbon atoms is preferable, and a diol having 8 to 10 carbon atoms is more preferable.
  • polycarbonate diol examples include those obtained by reacting a low molecular weight diol with a carbonate compound such as a dialkyl carbonate, an alkylene carbonate, or a diaryl carbonate.
  • a carbonate compound such as a dialkyl carbonate, an alkylene carbonate, or a diaryl carbonate.
  • the low molecular weight diol for producing the polycarbonate diol include the low molecular weight diols exemplified above.
  • the dialkyl carbonate include dimethyl carbonate and diethyl carbonate.
  • examples of the alkylene carbonate include ethylene carbonate.
  • diaryl carbonate examples include diphenyl carbonate and the like.
  • Organic diisocyanate is not particularly limited as long as it is an organic diisocyanate usually used for producing polyurethane.
  • alicyclic diisocyanate and aromatic diisocyanate are preferable from the viewpoint of improving the abrasion resistance of the obtained polishing layer, and 4,4'-dicyclohexylmethane diisocyanate, 4,4'-diphenylmethane diisocyanate, and 2,4 are preferable.
  • -Toluene diisocyanate and 2,6-toluene diisocyanate are more preferable, and 4,4'-diphenylmethane diisocyanate is further preferable from the viewpoint of improving the rigidity of the polishing layer.
  • the polyurethane of the present invention can be used as a cross-linking agent, a filler, a cross-linking accelerator, a cross-linking aid, a softening agent, a tackifier, an anti-aging agent, a foaming agent, a processing aid, an adhesion-imparting agent, and an inorganic filling.
  • Agents, organic fillers, crystal nucleating agents, heat-resistant stabilizers, weather-resistant stabilizers, antistatic agents, colorants, lubricants, flame retardants, flame retardants (antimonium oxide, etc.), blooming inhibitors, mold release agents, thickeners , Antioxidants, conductive agents and the like may be contained.
  • the content ratio of the additive in the polyurethane is not particularly limited, but is preferably 50% by mass or less, more preferably 20% by mass or less, and further preferably 5% by mass or less.
  • the blending ratio of each component can be appropriately adjusted according to the desired characteristics.
  • the amount of the structural unit derived from the compound having a carboxy group in all the structural units constituting the polyurethane is preferably 3 to 30 mol%, more preferably 4 to 20 mol%, and further. It is preferably 6 to 15 mol%, and even more preferably 6 to 12 mol%.
  • the amount of the structural unit of the compound having a carboxy group is at least the above lower limit value, the effect derived from the carboxy group can be sufficiently imparted to the obtained polyurethane.
  • a negative potential derived from the carboxy group can be sufficiently applied to the polyurethane, by using this in the polishing layer, it is possible to repel the abrasive grains having a negative potential and suppress clogging of the polishing layer. .. Further, when the amount of the structural unit derived from the compound having a carboxy group is not more than the upper limit value, it becomes easy to adjust the physical properties such as the hardness of polyurethane within the range described later.
  • the amount of the isocyanate group contained in the organic diisocyanate with respect to 1 mol of the active hydroxyl group contained in the compound having a carboxy group, the polymer diol, and the chain extender is preferably 0.80 to 1.3 mol, more preferably 0. .90-1.2 mol.
  • the ratio of the isocyanate group to 1 mol of the active hydroxyl group is at least the above lower limit value, the mechanical strength and abrasion resistance of the thermoplastic polyurethane tend to be improved, and the life of the polishing layer tends to be long.
  • the ratio of the isocyanate group to 1 mol of the active hydrogen atom is not more than the above upper limit value, the productivity and storage stability of the thermoplastic polyurethane are improved, and the polishing layer tends to be easily produced.
  • thermoplastic polyurethane is obtained by polymerizing the above-mentioned raw materials by a urethanization reaction using a known prepolymer method or one-shot method. More specifically, a method of blending each of the above-mentioned components in a predetermined ratio in the absence of a solvent and performing melt polymerization while melt-mixing using a single-screw or multi-screw screw extruder. Alternatively, a method of producing by polymerization by a prepolymer method in the presence of a solvent can be mentioned. The melt polymerization may be carried out continuously.
  • the concentration of the reaction solution is preferably 10 to 70% by mass, more preferably 20 to 60% by mass, and even more preferably 20 to 50% by mass from the viewpoint of operability due to reactivity and viscosity.
  • thermoplastic polyurethane is pelletized and then molded into a sheet-shaped molded product by various molding methods such as an extrusion molding method, an injection molding method, a blow molding method, and a calendar molding method.
  • various molding methods such as an extrusion molding method, an injection molding method, a blow molding method, and a calendar molding method.
  • extrusion molding using a T-die a sheet-shaped molded product having a uniform thickness can be obtained.
  • the polishing layer of the present invention uses the polyurethane of the present invention.
  • the polyurethane of the present invention has a carboxy group in its molecular structure, and by using this in the polishing layer, the abrasive grains are clogged due to the repulsive force between the negative potential of the carboxy group and the negative potential of the abrasive grains. Is less likely to occur, so it is possible to perform stable polishing with a long life while suppressing scratches.
  • the slurry used in CMP includes an alkaline slurry, and the abrasive grains contained in the alkaline slurry usually have a negative zeta potential.
  • the polishing layer of the present invention uses polyurethane having a carboxy group, the carboxy group on the surface dissociates into ⁇ COO ⁇ when it comes into contact with an alkaline slurry, so that the zeta on the surface of the polishing layer
  • the potential becomes low, for example, to about -10 mV or less.
  • the abrasive grains showing a negative zeta potential in alkalinity and the polishing layer show electrostatic repulsion, and as a result, the adhesion of the abrasive grains to the polishing layer is prevented, and clogging is suppressed especially in the non-woven fabric-based polishing layer. It is presumed that the occurrence of scratches and defects can be reduced.
  • the polishing layer may be either a polyurethane foam or a polyurethane non-foam, but is preferably a non-foam.
  • the polishing layer is a non-foamed polyurethane, the polishing characteristics are less likely to fluctuate and stable polishing can be realized.
  • the polishing layer of the present invention may be formed by molding polyurethane into a sheet shape, or may be a non-woven fabric impregnated with the polyurethane of the present invention and further solidified.
  • polyurethane By using polyurethane, abrasive grains are less likely to enter the unevenness caused by the non-woven fabric, and stable polishing is possible with a long life. Therefore, the non-woven fabric is impregnated with the polyurethane of the present invention and further solidified.
  • a polished layer is preferred.
  • an organic solution such as an N, N-dimethylformamide solution (DMF solution) having a polyurethane concentration of preferably 10 to 50% by mass, more preferably 20 to 40% by mass is prepared. To do. Next, this is preferably heated to about 27 to 40 ° C., and the non-woven fabric is allowed to stand on this for preferably about 5 to 20 minutes to allow the organic solvent to permeate. Then, the non-woven fabric is subsided in an organic solution of polyurethane for preferably 2 to 15 minutes, and then the excessively adhered organic solution is removed from the removed non-woven fabric.
  • DMF solution N, N-dimethylformamide solution
  • the polyurethane is solidified by immersing the non-woven fabric in an aqueous solution having an organic solvent concentration of 5 to 30% by mass and about 27 to 40 ° C. Then, if necessary, the non-woven fabric is washed with an organic solvent, water, or the like and dried to obtain a non-woven fabric impregnated with polyurethane.
  • the polyurethane solution impregnated in the non-woven fabric in the present invention include water-based polyurethane and solvent-based polyurethane.
  • the water-based polyurethane means a polyurethane that can be used by being dispersed in water or an aqueous solution
  • the solvent-based polyurethane means a polyurethane that can be used by being dissolved in an organic solvent.
  • solvent-based polyurethane is more preferable from the viewpoint of improving the degree of freedom in selecting a chain extender that contributes to the development of the zeta potential.
  • the non-woven fabric that can be used in the present invention is not particularly limited, and examples thereof include non-woven fabrics made of fibers mainly composed of polyester resins such as nylon, polybutylene terephthalate (PBT) and polyethylene terephthalate (PET).
  • polyester resins such as nylon, polybutylene terephthalate (PBT) and polyethylene terephthalate (PET).
  • PET polyethylene terephthalate
  • the storage elastic modulus is unlikely to fluctuate and the polishing efficiency is stable.
  • the storage elastic modulus fluctuates due to the high water absorption rate during polishing, the polishing pad is easily deformed, and the polishing efficiency is likely to decrease. ..
  • polyester fiber When polyester fiber is used, its average single fiber fineness is preferably 0.01 to 5.0 dtex, more preferably 0.03 to 1.0 dtex. If the average single fiber fineness is at least the above lower limit value, the fibers are less likely to break during dressing, so that scratches due to falling off can be prevented. On the other hand, when the average single fiber fineness is not more than the upper limit value, the load on the object to be polished does not become too large, so that scratching can be prevented.
  • the zeta potential of the polyurethane constituting the polishing layer at pH 7.0 is preferably -10.0 mV or less, more preferably -50. It is .0 to -12.0 mV, more preferably -40.0 to -15.0 mV, even more preferably -30.0 to -17.0 mV, and even more preferably -27.0 to -17.0 mV. It is -20.0 mV.
  • the zeta potential of the polyurethane constituting the polishing layer at pH 7.0 is equal to or less than the upper limit value, the polishing layer and the abrasive grains are electrically repelled, so that the effect of suppressing clogging is improved.
  • the zeta potential at pH 7.0 is at least the above lower limit value, the slurry held on the polishing surface does not become too small, and a good polishing rate can be maintained.
  • the zeta potential refers to the potential generated on the surface (sliding surface) of the electric double layer by counterions according to the surface charge of the substance when the substance comes into contact with the liquid.
  • a monitor latex (manufactured by Otsuka Electronics Co., Ltd.) dispersed in a 10 mM NaCl aqueous solution adjusted to pH 7.0 with an aqueous NaCl solution using an electrophoretic light scattering device (ELS-Z, manufactured by Otsuka Electronics Co., Ltd.) Can be measured using.
  • ELS-Z electrophoretic light scattering device
  • the zeta potential of the polyurethane forming the polishing layer at pH 5.0 is preferably ⁇ 5.0 mV or less, more preferably -40.0 to -12.0 mV, and further preferably from the same viewpoint as described above. Is -35.0 to -15.0 mV, and even more preferably -30.0 to -17.0 mV.
  • the zeta potential of the polyurethane forming the polishing layer at pH 8.0 is preferably -15.0 mV or less, more preferably -60.0 to -20.0 mV, still more preferably, from the same viewpoint as described above. Is -50.0 to -25.0 mV, and even more preferably -40.0 to -30.0 mV.
  • the storage elastic modulus measured at 50 ° C. is preferably 50 to 1,200 MPa, more preferably 100 to 1,100 MPa, and further. It is preferably 200 to 1,000 MPa, and even more preferably 400 to 1,000 MPa.
  • the storage elastic modulus at 50 ° C. is at least the lower limit value, the polishing layer has appropriate softness, so that the polishing rate becomes good.
  • the storage elastic modulus is not more than the upper limit value, the scratches on the surface to be polished of the object to be polished tend to be reduced.
  • the storage elastic modulus can be measured by the method described in Examples.
  • the polyurethane satisfying the storage elastic modulus can be obtained, for example, by adjusting the content of nitrogen atoms derived from the isocyanate group in the polyurethane.
  • the content of nitrogen atoms derived from isocyanate groups in polyurethane is preferably 4.5 to 7.6% by mass, more preferably 5.0 to 7.4% by mass, and even more preferably. It is 5.2 to 7.3% by mass.
  • the contact angle of the polyurethane constituting the polishing layer with water is preferably 80 degrees or less, more preferably 70 degrees or less, still more preferably 60 degrees or less, still more preferably 49 degrees or less.
  • the contact angle of polyurethane with water can be measured according to the method described in Examples.
  • the polyurethane constituting the polishing layer of the present invention preferably has the storage elastic modulus within the above range and the contact angle with water within the above range.
  • the polyurethane constituting the polishing layer is saturated and swollen with water at 50 ° C., and then the storage elastic modulus measured at 50 ° C. is preferably 50 to 1,200 MPa, more preferably 100 to 1, It is 100 MPa, more preferably 200 to 1,000 MPa, and the contact angle of the polyurethane constituting the polishing layer with water is preferably 80 degrees or less, more preferably 70 degrees or less, still more preferable. Is 60 degrees or less, and more preferably 50 degrees or less. When both the storage elastic modulus and the contact angle with water are within the above ranges, polishing uniformity and polishing stability are further improved.
  • the non-woven fabric may be impregnated with polyurethane and solidified, or may be made of a molded sheet of polyurethane, but the density of polyurethane when made of a molded sheet is preferably 1.0 g. It is / cm 3 or more, more preferably 1.1 g / cm 3 or more, and further preferably 1.2 g / cm 3 or more.
  • the density of the molded product of the thermoplastic polyurethane is at least the above lower limit value, the polishing layer has appropriate flexibility.
  • non-foamed thermoplastic polyurethane is particularly preferable because it is excellent in polishing stability due to its high rigidity and material homogeneity.
  • the shape of the polishing layer of the present invention can be appropriately adjusted by cutting, slicing, punching, or the like, for example, a sheet-shaped molded body of thermoplastic polyurethane.
  • the thickness of the polishing layer is not particularly limited, but is preferably 0.5 to 5.0 mm, more preferably 1.0 to 3.0 mm, and even more preferably 1.2 to 2.0 mm. When the thickness of the polishing layer is within the above range, productivity and handleability are improved, and stability of polishing performance is also improved.
  • the hardness of the polishing layer is preferably 60 or more, more preferably 65 or more, and preferably 95 or less, more preferably 90 or less, as measured by JIS K 6253-3: 2012.
  • the hardness is at least the above lower limit value, the followability of the polishing pad to the surface to be polished becomes low, and the flatness is improved.
  • the hardness is not more than the upper limit value, scratches are less likely to occur, which is preferable.
  • the polished surface of the polishing layer is formed with recesses such as grooves and holes in a predetermined concentric, lattice-like, spiral-like, and radial patterns by grinding or laser processing.
  • recesses are useful for uniformly and sufficiently supplying the slurry to the polished surface, discharging polishing debris that causes scratches, and preventing wafer damage due to adsorption of the polishing layer.
  • the distance between the grooves is preferably 1.0 to 50 mm, more preferably 1.5 to 30 mm, and further preferably 2.0 to 15 mm.
  • the width of the groove is preferably 0.1 to 3.0 mm, more preferably 0.2 to 2.0 mm.
  • the depth of the groove is less than the thickness of the polishing layer, preferably 0.2 to 1.8 mm, and more preferably 0.4 to 1.5 mm.
  • a shape such as a rectangle, a trapezoid, a triangle, or a semicircle is appropriately selected according to an object.
  • the polishing pad of the present invention uses the polishing layer of the present invention.
  • the polishing pad of the present invention may be composed of only the polishing layer of the present invention, or may be a laminated body in which a cushion layer is laminated on a surface of the polishing layer that is not the polishing surface.
  • the cushion layer is preferably a layer having a hardness lower than the hardness of the polishing layer.
  • the hard polishing layer follows the local unevenness of the surface to be polished, and the cushion layer responds to the warp and waviness of the entire substrate to be polished. In order to follow, it is possible to perform polishing with an excellent balance between global flatness (a state in which irregularities with a large period of the wafer substrate are reduced) and local flatness (a state in which local irregularities are reduced).
  • the material used as the cushion layer include a composite in which a non-woven fabric is impregnated with polyurethane (for example, "Suba400" (manufactured by Nitta Haas Co., Ltd.)); natural rubber, nitrile rubber, polybutadiene rubber, silicone rubber, etc. Rubber; thermoplastic elastomers such as polyester-based thermoplastic elastomers, polyamide-based thermoplastic elastomers, and fluorine-based thermoplastic elastomers; foamed plastics; polyurethane and the like.
  • polyurethane having a foamed structure is particularly preferable because it is easy to obtain preferable flexibility as a cushion layer.
  • the thickness of the cushion layer is not particularly limited, but is preferably about 0.5 to 5 mm, for example. If the cushion layer is too thin, the effect of following the entire warp or waviness of the surface to be polished tends to decrease, and the global flatness tends to decrease. On the other hand, if the cushion layer is too thick, the entire polishing pad tends to be soft and stable polishing tends to be difficult. When the cushion layer is laminated on the polishing layer, the thickness of the polishing pad is preferably about 0.3 to 5 mm.
  • the polishing method of the present invention uses the polishing layer of the present invention, and includes a step of fixing a polishing pad provided with the polishing layer on a surface plate of a polishing apparatus. A step of holding the object to be polished in the holder of the polishing apparatus so as to face the polished surface of the polishing layer, and A step of polishing the object to be polished by relatively sliding the polishing pad and the object to be polished while supplying a neutral or alkaline polishing slurry between the surface to be polished and the object to be polished.
  • It is a polishing method having.
  • polishing method of the present invention when CMP is performed using an alkaline slurry, clogging of the abrasive grains can be suppressed by improving the repulsive force between the abrasive grains in the slurry and the polishing pad. This makes it possible to extend the life of the polishing pad.
  • CMP An embodiment in the case where the polishing method of the present invention is performed by CMP will be described with reference to FIG.
  • a CMP apparatus 10 including a circular rotary surface plate 2 shown in FIG. 3, a slurry supply nozzle 3, a holder 4, and a pad conditioner 6 is used.
  • a polishing pad 1 having the above-mentioned polishing layer is attached to the surface of the rotary surface plate 2 with double-sided tape or the like. Further, the holder 4 supports the object to be polished 5.
  • the rotary surface plate 2 is rotated in the direction indicated by the arrow by the motor shown in the figure. Further, the holder 4 is rotated in the plane of the rotary surface plate 2 by a motor (not shown) in the direction indicated by, for example, an arrow.
  • the pad conditioner 6 is also rotated in the plane of the rotary surface plate 2 by a motor (not shown) in the direction indicated by an arrow, for example.
  • a pad conditioner 6 for CMP in which diamond particles are fixed to the carrier surface by nickel electrodeposition or the like is pressed against it. Then, the polished surface of the polishing pad 1 is conditioned. Conditioning adjusts the polished surface to a surface roughness suitable for polishing the surface to be polished.
  • the slurry 7 is supplied from the slurry supply nozzle 3 to the polished surface of the rotating polishing pad 1. Further, when performing CMP, if necessary, a lubricating oil, a coolant, or the like may be used in combination with the slurry.
  • the slurry includes an acidic slurry, an alkaline slurry, and a slurry in the vicinity of neutrality.
  • a liquid medium such as water or oil
  • abrasive grains such as silica, alumina, cerium oxide, zirconium oxide, and silicon carbide.
  • a slurry used for CMP containing a base, an acid, a surfactant, an oxidizing agent such as a hydrogen peroxide solution, a reducing agent, a chelating agent, etc. is preferably used.
  • the CMP is adjusted to alkaline using a neutral or alkaline slurry, and CMP is preferably prepared using a slurry having a pH of 5.0 to 12.0, more preferably a pH of 6.0 to 10.0. This is preferable in that the repulsive force between the abrasive grains and the polishing layer is maintained.
  • the rotating object 5 fixed to the holder 4 is pressed against the polishing pad 1 in which the slurry 7 is evenly distributed on the polishing surface of the polishing layer. Then, the polishing process is continued until a predetermined flatness is obtained. Finishing quality is affected by adjusting the pressing force applied during polishing and the speed of relative movement between the rotary surface plate 2 and the holder 4.
  • the polishing conditions are not particularly limited, but in order to perform efficient polishing, it is preferable that the rotation speeds of the rotary surface plate and the holder are as low as 300 rpm or less, and the pressure applied to the object to be polished causes scratches after polishing. It is preferably 150 kPa or less so as not to prevent it.
  • the amount of the slurry supplied is not particularly limited, but it is preferable to supply the slurry so that the polished surface is always covered with the slurry.
  • the object to be polished after polishing is thoroughly washed with running water, and then water droplets adhering to the object to be polished are wiped off and dried using a spin dryer or the like.
  • a spin dryer or the like By polishing the surface to be polished with the slurry in this way, a smooth surface can be obtained over the entire surface to be polished.
  • the above-mentioned CMP can be suitably used for polishing various semiconductor materials such as silicon wafers.
  • Example 1 Polytetramethylene glycol (PTG850) having a number average molecular weight of 850, dimethylolpropionic acid (DMP), which is a compound having a carboxy group, 1,4-butanediol (BD), and 4,4'-diphenylmethane diisocyanate (MDI).
  • DMP dimethylolpropionic acid
  • BD 1,4-butanediol
  • MDI 4,4'-diphenylmethane diisocyanate
  • Examples 2 to 10 and Comparative Examples 1 to 3 Polyurethanes of Examples 2 to 10 and Comparative Examples 1 to 3 were produced in the same manner as in Example 1 except that the formulations shown in Table 1 were used. The obtained thermoplastic polyurethane was evaluated as described later. The results are shown in Table 1.
  • thermoplastic polyurethane produced in Examples and Comparative Examples are sandwiched between Teflon (registered trademark) sheets and then pressed at 200 to 230 ° C. using a hot press to form the molded product.
  • a molded sheet of thermoplastic polyurethane having a thickness of 0.3 to 0.5 mm was obtained.
  • the obtained molded sheet was cut into a size of 30 mm ⁇ 60 mm, and the surface thereof was washed. Then, using an electrophoretic light scattering device (ELS-Z, manufactured by Otsuka Electronics Co., Ltd.), the sample was attached to the plate measurement cell.
  • ELS-Z electrophoretic light scattering device
  • the zeta potential was measured using a monitor latex (manufactured by Otsuka Electronics Co., Ltd.) dispersed in a 10 mM NaCl aqueous solution adjusted to pH 5.0, pH 7.0, and pH 8.0 with an aqueous NaOH solution.
  • a monitor latex manufactured by Otsuka Electronics Co., Ltd.
  • ⁇ Contact angle with water> For each thermoplastic polyurethane produced in Examples and Comparative Examples, a film having a thickness of 300 ⁇ m was prepared by a heat pressing method. Next, the obtained film was left to stand under the conditions of 20 ° C. and 65% RH for 3 days, and 15 minutes after dropping water on the surface, a contact angle with water using DropMaster 500 manufactured by Kyowa Interface Science Co., Ltd. was used. Was measured.
  • Polishing pads were manufactured and evaluated using the polyurethanes obtained in Examples and Comparative Examples.
  • a strand of 25 islands of sea-island type composite fiber containing polyethylene terephthalate (PET) as an island component and water-soluble thermoplastic PVA as a sea component and having a mass ratio of sea component / island component of 25/75 is melted at 265 ° C.
  • a sea-island type composite fiber was spun by discharging from a mouthpiece for composite spinning and cooling while stretching and thinning. Then, a long fiber web was obtained by continuously collecting and pressing.
  • the long fiber webs were overlapped and needle punching treatment was performed alternately on both sides, and the long fiber webs were entangled with each other to obtain a three-dimensional entangled body.
  • an aqueous emulsion of polyurethane for raw material was impregnated into a three-dimensional entangled body to impregnate it and dried.
  • the three-dimensional entangled fabric is dipped in hot water to dissolve and remove the water-soluble thermoplastic PVA of the island component from the sea-island type composite fiber, and dried to obtain PET fiber having 25 bundles of single fiber (average single fiber).
  • a raw fabric containing a non-woven fabric (thickness 1.8 mm) having a fineness of 0.05 dtex) and non-porous polyurethane was obtained.
  • thermoplastic polyurethane of Examples and Comparative Examples The obtained raw fabric was cut out to a size of 380 mm ⁇ 380 mm. Next, the cut out raw fabric was impregnated with the thermoplastic polyurethanes obtained in Examples and Comparative Examples, respectively. The impregnation was applied as follows. A DMF solution having a concentration of 25% by mass of each thermoplastic polyurethane was heated to 30 ° C., and the raw fabric was allowed to stand on it for 10 minutes to allow the DMF solution to permeate. Next, the raw fabric was subsided in the DMF solution for 5 minutes, the raw fabric was taken out and placed on a glass plate, and the surface of the raw fabric was traced with a doctor knife to remove the adhered DMF solution. The same operation was performed on the back surface.
  • thermoplastic polyurethanes of Examples and Comparative Examples were solidified by leaving this for 30 minutes, and then the raw fabric impregnated with the thermoplastic polyurethane was immersed in hot water at 70 to 95 ° C.
  • the raw fabric impregnated with the thermoplastic polyurethane was sandwiched between metal rolls, water was squeezed out, and then the fabric was immersed in hot water again and washed with water. This operation was repeated until the DMF concentration of the squeezed water became 0.3% by mass or less.
  • concentration of DMF was measured with an Abbe refractometer 1T (Atago Co., Ltd.).
  • the raw fabric washed with water was placed in a hot air dryer (device name: Safety Oven SPH-202 / ESPEC CO., LTD.) And dried at 100 ° C. for 40 minutes. In this way, the original fabric of the polishing pad was obtained.
  • the obtained polishing pad was polished according to the polishing method of the present invention. Specifically, the obtained polishing pad was attached to a polishing device "MAT-BC15" manufactured by MAT Co., Ltd. Then, using a diamond dresser (# 100-coverage 80%, diameter 19 cm, mass 1 kg) manufactured by A.L.M. Co., Ltd., while flowing distilled water at a speed of 150 mL / min, the dresser rotation speed is 140 rpm and the platen rotation speed is 100 rpm. The pad surface was conditioned under the condition of 15 minutes. Next, a slurry having a pH of 7.0 to 11 was prepared by diluting the slurry (colloidal silica, slurry concentration 1%) 20 times.
  • a 4-inch silicon wafer was polished for 60 seconds.
  • the polishing pad was conditioned for 30 seconds.
  • another silicon wafer was polished again and further conditioned for 30 seconds. In this way, 10 silicon wafers were polished.
  • the speed was calculated from the weight change before and after polishing the 10th silicon wafer, and the average value was taken as the polishing speed.
  • FIG. 4 is a diagram showing each of a state with scratches, a state with scratches, and a state with stains and unpolished residue, and corresponds to "3" to "4" in the following evaluations.
  • Example 11 Manufacture of raw fabric containing PET non-woven fabric and non-porous polyurethane
  • a sea-island type composite fiber was spun by discharging from a mouthpiece for composite spinning and cooling while stretching and thinning. Then, a long fiber web was obtained by continuously collecting and pressing.
  • the long fiber webs were overlapped and needle punching treatment was performed alternately on both sides, and the long fiber webs were entangled with each other to obtain a three-dimensional entangled body.
  • an aqueous emulsion of polyurethane for raw material was impregnated into a three-dimensional entangled body to impregnate it and dried.
  • the three-dimensional entangled fabric is dipped in hot water to dissolve and remove the water-soluble thermoplastic PVA of the island component from the sea-island type composite fiber, and dried to obtain PET fiber having 25 bundles of single fiber (average single fiber).
  • a raw fabric containing a non-woven fabric (thickness 1.8 mm) having a fineness of 0.05 dtex) and non-porous polyurethane was obtained.
  • thermoplastic polyurethane of Examples and Comparative Examples Next, the obtained non-woven fabric was impregnated with an aqueous dispersion of the crosslinked polyurethane elastic body A adjusted to have a solid content concentration of 25% by mass.
  • the aqueous dispersion of the crosslinked polyurethane elastic body A contains 95% by mass of an amorphous polycarbonate-based polyol which is a copolymerized polyol of hexamethylene carbonate and pentamethylene carbonate, and 2,2-bis (hydroxymethyl) propionic acid 5.
  • a polyol component consisting of mass% a chain extender composed of dimethylolpropionic acid (a diol having a carboxy group), 4,4'-dicyclohexylmethanediisocyanate, and an amine-based chain extension composed of hydrazine.
  • This is obtained by adding 3 parts by mass of a carbodiimide-based cross-linking agent to 100 parts by mass of an aqueous dispersion of polyurethane obtained by blending and polymerizing the agent.
  • the component ratio of the polyol component, the polyisocyanate component, and the chain extender forming the polyurethane was blended in the ratio
  • the solid content of the aqueous dispersion was 15% by mass with respect to the mass of the non-woven fabric.
  • the non-woven fabric impregnated with the aqueous dispersion was heat-treated at 90 ° C. in a 50% RH atmosphere to solidify the polyurethane.
  • the crosslinked structure was formed by further heat-treating at 150 ° C.
  • by further heat pressing at 150 ° C. the original fabric of the polishing pad was obtained.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
PCT/JP2020/046159 2019-12-13 2020-12-10 ポリウレタン、研磨層、研磨パッド及び研磨方法 WO2021117834A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020227019386A KR20220117220A (ko) 2019-12-13 2020-12-10 폴리우레탄, 연마층, 연마 패드 및 연마 방법
CN202080085452.8A CN114787225A (zh) 2019-12-13 2020-12-10 聚氨酯、抛光层、抛光垫及抛光方法
JP2021564044A JPWO2021117834A1 (zh) 2019-12-13 2020-12-10

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019225695 2019-12-13
JP2019-225695 2019-12-13

Publications (1)

Publication Number Publication Date
WO2021117834A1 true WO2021117834A1 (ja) 2021-06-17

Family

ID=76329956

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2020/046159 WO2021117834A1 (ja) 2019-12-13 2020-12-10 ポリウレタン、研磨層、研磨パッド及び研磨方法

Country Status (5)

Country Link
JP (1) JPWO2021117834A1 (zh)
KR (1) KR20220117220A (zh)
CN (1) CN114787225A (zh)
TW (1) TW202128807A (zh)
WO (1) WO2021117834A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7462083B1 (ja) 2022-09-30 2024-04-04 世目特種防護用品科技（江蘇）有限公司 水性ポリウレタンエマルション及びその製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007287938A (ja) * 2006-04-17 2007-11-01 Adeka Corp 金属ｃｍｐ用研磨組成物
JP2017141393A (ja) * 2016-02-12 2017-08-17 ニッタ・ハース株式会社 高分子体、研磨パッド、および、高分子体の製造方法
KR20180024096A (ko) * 2016-08-26 2018-03-08 에스케이씨 주식회사 연마패드 제조용 우레탄계 프리폴리머, 연마패드 및 이의 제조방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03234475A (ja) 1990-02-08 1991-10-18 Kanebo Ltd 研磨布
JPH1199479A (ja) 1997-09-30 1999-04-13 Teijin Ltd 研磨パッド
JPH11322878A (ja) 1998-05-13 1999-11-26 Dainippon Ink & Chem Inc 泡含有ポリウレタン成形物の製造方法、泡含有成形物用ウレタン樹脂組成物及びそれを用いた研磨パッド
JP3516874B2 (ja) 1998-12-15 2004-04-05 東洋ゴム工業株式会社 ポリウレタン発泡体の製造方法及び研磨シート
JP2000248034A (ja) 1999-03-02 2000-09-12 Mitsubishi Chemicals Corp 研磨材用ポリウレタン系樹脂組成物及びその発泡体
JP3558273B2 (ja) 1999-09-22 2004-08-25 東洋ゴム工業株式会社 ポリウレタン発泡体の製造方法及び研磨シート
JP2005212055A (ja) 2004-01-30 2005-08-11 Kanebo Ltd 不織布ベースの研磨布及びその製造方法
JP4859110B2 (ja) * 2006-04-07 2012-01-25 東洋ゴム工業株式会社 研磨パッド
US20150375361A1 (en) * 2014-06-25 2015-12-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
JP7181860B2 (ja) * 2017-05-12 2022-12-01 株式会社クラレ ポリウレタンを含む研磨層とその研磨層の改質方法，研磨パッド及び研磨方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007287938A (ja) * 2006-04-17 2007-11-01 Adeka Corp 金属ｃｍｐ用研磨組成物
JP2017141393A (ja) * 2016-02-12 2017-08-17 ニッタ・ハース株式会社 高分子体、研磨パッド、および、高分子体の製造方法
KR20180024096A (ko) * 2016-08-26 2018-03-08 에스케이씨 주식회사 연마패드 제조용 우레탄계 프리폴리머, 연마패드 및 이의 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7462083B1 (ja) 2022-09-30 2024-04-04 世目特種防護用品科技（江蘇）有限公司 水性ポリウレタンエマルション及びその製造方法

Also Published As

Publication number Publication date
CN114787225A (zh) 2022-07-22
TW202128807A (zh) 2021-08-01
JPWO2021117834A1 (zh) 2021-06-17
KR20220117220A (ko) 2022-08-23

Similar Documents

Publication Publication Date Title
JP6619100B2 (ja) 研磨パッドおよびそれを用いた研磨方法
JP6518680B2 (ja) 研磨層用非多孔性成形体，研磨パッド及び研磨方法
KR20090132607A (ko) 금속 막 연마용 패드 및 그것을 이용하는 금속 막의 연마 방법
WO2019216279A1 (ja) ポリウレタンの改質方法，ポリウレタン，研磨パッド及び研磨パッドの改質方法
WO2021117834A1 (ja) ポリウレタン、研磨層、研磨パッド及び研磨方法
TWI838883B (zh) 研磨墊
JP7104174B2 (ja) 研磨層用ポリウレタン、研磨層、研磨パッド及び研磨層の改質方法
WO2023149434A1 (ja) 研磨層、研磨パッド、研磨パッドの製造方法及び研磨方法
WO2023054331A1 (ja) 研磨層用熱可塑性ポリウレタン、研磨層、及び研磨パッド
WO2023048265A1 (ja) 研磨パッド
KR20240144181A (ko) 연마층, 연마 패드, 연마 패드의 제조 방법 및 연마 방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20900383

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2021564044

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20900383

Country of ref document: EP

Kind code of ref document: A1