WO2021110065A1 - 倒装led芯片、线路板以及电子设备 - Google Patents
倒装led芯片、线路板以及电子设备 Download PDFInfo
- Publication number
- WO2021110065A1 WO2021110065A1 PCT/CN2020/133441 CN2020133441W WO2021110065A1 WO 2021110065 A1 WO2021110065 A1 WO 2021110065A1 CN 2020133441 W CN2020133441 W CN 2020133441W WO 2021110065 A1 WO2021110065 A1 WO 2021110065A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- pad
- chip
- flip
- groove
- led chip
- Prior art date
Links
- 229910000679 solder Inorganic materials 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims description 10
- 230000007423 decrease Effects 0.000 claims description 5
- 238000005476 soldering Methods 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 42
- 230000007480 spreading Effects 0.000 description 33
- 238000010586 diagram Methods 0.000 description 16
- 230000001965 increasing effect Effects 0.000 description 12
- 238000002955 isolation Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 4
- 230000002708 enhancing effect Effects 0.000 description 4
- 238000005034 decoration Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Definitions
- the invention relates to the field of electronics, in particular to a flip-chip LED chip, a circuit board and an electronic device.
- each circuit board usually has thousands of solder joints, or even millions of solder joints, for connecting LED chips.
- solder joints brings great difficulty to the packaging of MiniLED chips-due to the need for densely packed ultra-small spaces, the chip size of MiniLED chips is micron level, but when the pad area of the chip is less than 2000 square microns , Due to the small pad area of the chip and the small contact area between the chip and the solder paste, the bonding force between the chip pad and the solder paste will be too small, which will cause problems such as open circuit, lack of brightness, and flicker, which will seriously affect the product. Product reliability.
- the flip-chip LED chip, circuit board, and electronic device provided by the embodiments of the present invention mainly solve the technical problem that: due to the small pad area of the MiniLED chip, the welding combination of the chip pad and the circuit board is unreliable, and the product yield rate Low problem.
- an embodiment of the present invention provides a flip-chip LED chip, which includes a chip main body and a pad provided at the bottom of the chip main body, and the pad includes an N-pole pad and a P-pole pad;
- the bottom of the chip main body is provided with two upwardly recessed pad grooves, the N-pole pad and the P-pole pad are respectively arranged at the bottom of a pad groove, and the side surface of the pad is connected to the pad groove. There is a gap between the side walls.
- the absolute value of the difference between the height h of the pad and the depth d of the pad groove is less than or equal to 20 um.
- the height h of the pad is less than or equal to the depth d of the pad groove.
- the cross-sectional area of the pad gradually decreases from the bottom of the pad groove to the notch away from the pad groove.
- the longitudinal section of the pad is an inverted isosceles trapezoid or rectangle.
- the sidewall of the land groove is perpendicular to the bottom surface of the chip main body, or the cross section of the land groove gradually increases from the groove bottom to the notch.
- the gap between the side surface of the pad and the sidewall of the pad groove gradually increases from the groove bottom of the pad groove to the notch far from the pad groove.
- the friction coefficient of the bottom of the pad is greater than the friction coefficient of the bottom of the chip body.
- the bottom surface and/or the side surface of the pad are saw-toothed or wavy.
- the embodiment of the present invention also provides a circuit board, which includes a substrate and at least one flip-chip LED chip as described above; the pad of the flip-chip LED chip is soldered to the chip setting area of the substrate and is electrically connected to the circuit in the substrate.
- An embodiment of the present invention also provides an electronic device, including the above circuit board.
- Embodiments of the present invention provide a flip-chip LED chip, a circuit board, and an electronic device, wherein the flip-chip LED chip includes a chip main body and a pad provided at the bottom of the chip main body.
- the pads include N-pole pads and P-pole pads.
- the N-pole pad and the P-pole pad are respectively set at the bottom of a pad groove, and there is a gap between the side surface of the pad and the side wall of the pad groove.
- the molten solder paste can penetrate into the gap and be combined with the side surface of the pad, so that the solder paste and the pad are more fully bonded and improved
- the reliability of soldering flip-chip LED chips and circuit boards can significantly improve the yield of flip-chip LED chips.
- the reliability of the product can be enhanced, the service life of the product can be prolonged, and the product quality can be improved.
- Fig. 1 is a schematic structural diagram of a flip-chip LED chip in the related art
- FIG. 2a is a schematic diagram of the structure of the first flip-chip LED chip provided in Embodiment 1 of the present invention.
- FIG. 2b is a schematic structural diagram of a second flip-chip LED chip provided in Embodiment 1 of the present invention.
- Fig. 3a is a schematic structural diagram of a third flip-chip LED chip provided in Embodiment 1 of the present invention.
- FIG. 3b is a schematic structural diagram of a fourth flip-chip LED chip provided in Embodiment 1 of the present invention.
- FIG. 4 is a schematic structural diagram of a fifth flip-chip LED chip provided in Embodiment 1 of the present invention.
- FIG. 5 is a schematic structural diagram of a sixth flip-chip LED chip provided in Embodiment 1 of the present invention.
- FIG. 6 is a schematic diagram of a structure of the pad shown in Embodiment 1 of the present invention.
- FIG. 7 is a schematic structural diagram of a seventh flip-chip LED chip provided in Embodiment 1 of the present invention.
- FIG. 8 is a schematic structural diagram of an eighth flip-chip LED chip provided in Embodiment 1 of the present invention.
- FIG. 9 is a schematic structural diagram of a flip-chip LED chip provided in Embodiment 2 of the present invention.
- FIG. 10 is a schematic structural diagram of a circuit board provided in Embodiment 3 of the present invention.
- the flip-chip LED chip 10 includes a chip body 11 and a bonding pad 12, and the bonding pad 12 includes an N-pole bonding pad. With a P-pole pad, the N-pole pad and the P-pole pad are separated by an insulating isolation tape.
- the chip body 11 may include a sapphire layer, an N-type current spreading layer, and a P-type current spreading layer, but these details are not shown in FIG. 1. It can be seen from FIG. 1 that the pad 12 is arranged on the bottom of the chip main body 11 in an externally convex manner. During the soldering process, the pad 12 is mainly in contact with the solder paste on the bottom of the pad 12.
- this embodiment provides a new flip-chip LED chip. Please refer to a schematic structural diagram of the flip-chip LED chip shown in FIG. 2a:
- the flip-chip LED chip 20 includes a chip main body 21 and a pad 22 disposed at the bottom of the chip main body.
- the chip main body 21 may include an N-type current spreading layer and a P-type current spreading layer, and a P-N junction is formed between the N-type current spreading layer and the P-type current spreading layer.
- the chip main body 21 may also include a transparent protective layer, a light-emitting layer, and the like.
- the pad 22 Similar to the pad 12 of the flip-chip LED chip 10 shown in FIG. 1, the pad 22 also includes an N-pole pad 221 and a P-pole pad 222.
- the N-pole pad 221 and the P-pole pad 222 are insulated from each other.
- the isolation bands made of materials are isolated from each other.
- the pad 22 is arranged at the bottom of the chip main body 21.
- the chip main body 21 is provided with two upwardly recessed pad grooves 210 at the bottom, and the N-pole pad 221 and the P-pole pad 222 are each arranged in a welding pad.
- the gap therebetween penetrates, thereby being combined with the sidewall of the pad 22 and the sidewall of the pad groove 210. In this way, the contact area between the solder paste and the pad 22 can be increased, thereby improving the tightness of the direct bonding between the solder paste and the pad 22, and enhancing the reliability of soldering.
- the height h of the pad 22 is still less than or equal to the depth d of the pad groove 210, so the pad 22 is in the pad groove 210, because the pad 22 is disposed on the upwardly recessed pad. In the groove 210, therefore, the pad 22 is basically "embedded" at the bottom of the chip main body 21.
- the pad 22 may extend out of the pad groove 210, that is, the depth d of the pad groove 210 is less than the height h of the pad 22.
- the value is less than or equal to 20um.
- h-d is less than or equal to 20um
- h is less than or equal to d, which naturally meets the conditions, but in some examples, h can also be slightly greater than d, as long as it does not exceed 20um.
- the pad 22 slightly protrudes from the notch of the pad groove 210.
- the height of the pad 22 is substantially less than or equal to the depth of the pad groove 210, for example, the depth of the pad groove 210 in FIG. 3b is equal to the height of the pad 22.
- the height of the pad 22 in FIG. 2a is smaller than the depth of the pad groove 210. It should be understood that, compared to the case where the height of the pad 22 is equal to the depth of the pad groove 210 or greater than the depth of the pad groove 210, the flip-chip LED chip 20 shown in FIG. It easily penetrates into the gap between the sidewall of the land groove 21 and the land 22. Therefore, the land 22 is shrunk in the land groove 210, which helps to further improve the reliability of soldering.
- the longitudinal section of the pad 22 may be rectangular.
- the pad 22 itself may be a rectangular parallelepiped, a cube, A prism, a cylinder, etc., in this case, the cross-sectional shape and area of the pad 22 are the same everywhere.
- the cross-sections of the pads are not exactly the same. In FIG. 2a, the cross-section of the pad 22 is from top to bottom. Gradually decrease, that is, gradually decrease from approaching the groove bottom of the pad groove 210 to moving away from the groove bottom.
- the pad 22 in FIG. 2a has an inverted trapezoid shape.
- the sidewall of the land groove 210 is vertical (that is, perpendicular to the bottom surface of the chip main body 21), so the gap between the land groove 210 and the land 22 gradually increases from top to bottom. It is also conducive to diversion of the solder paste and facilitates the penetration of the solder paste.
- the longitudinal section of the pad is an inverted isosceles trapezoid, but in some other examples of this embodiment, the longitudinal section of the pad 22 may not be an inverted isosceles trapezoid, but a common trapezoid.
- the sidewalls of the land groove may not be vertical.
- FIG. 2b an LED chip is shown in which the cross-sectional area of the land groove is from The bottom of the groove gradually increases from the bottom of the groove to the notch.
- the sidewall of the land groove is inclined in a direction away from the land.
- the pad is in the shape of an inverted trapezoid in Figure 2b, there is no doubt that in some other examples of this embodiment, the longitudinal section of the pad can also be rectangular, and the pad 22 itself can be a rectangular parallelepiped, a cube, or a prism. Body or cylinder, etc.
- the friction coefficient at the bottom of the pad can be set to be relatively large, for example, the friction at the bottom of the pad can be made The coefficient is greater than the current spreading layer integrated with the pad.
- the friction coefficient at the bottom of the N-pole pad is greater than that of the N-type current spreading layer, and the friction coefficient at the bottom of the P-pole pad is greater than that of the P-type current spreading layer. In some examples of this embodiment, the friction coefficient at the bottom of the pad is greater than the friction coefficient between the N-type current spreading layer and the P-type current spreading layer.
- FIG. 5 Please refer to the schematic diagram of the structure of a flip-chip LED chip shown in FIG. 5: the arrangement between the pad 52 and the chip body 51 in the flip-chip LED chip 50 is similar to the arrangement in the flip-chip LED chip 10 of FIG. 1, but In FIG. 5, the bottom of the pad of the flip-chip LED chip 50 is zigzag or wavy. It should be understood that in FIG. 5, although the bottom surface of the pad 52 has a triangular sawtooth shape, in some other examples of this embodiment, the bottom surface of the pad 52 may also have a square wave sawtooth shape, or even a triangular sawtooth shape. The combination with the square wave saw-tooth shape, or the combination of saw-tooth shape and wavy shape, for example, FIG. 6 shows a schematic structural diagram of another type of pad. Of course, in some other examples of this embodiment, the sawtooth on the bottom surface of the pad may also have other shapes, which will not be enumerated here.
- this solution for increasing the friction coefficient of the pad surface can also be applied to the flip-chip LED chip provided in this embodiment.
- the flip-chip LED chip 70 is soldered.
- the bottom surface of the disk 72 is rough, and the friction coefficient is greater than the corresponding current spreading layer. Therefore, for the flip-chip LED chip 70, not only can the solder paste penetrate into the gap between the land 72 and the land groove 710 to improve the tightness of the bonding between the land 72 and the solder paste, but also the use of the land
- the coincidence of the sawtooth on the bottom surface of 72 with the solder paste can also further increase the cutting force between the pad 72 and the solder paste, thereby improving the reliability of the soldering of the flip-chip LED chip 70.
- the friction coefficient on the side of the pad can also be increased.
- the side of the pad can also be jagged.
- an LED chip includes two pads, and the shapes of the two pads may not be exactly the same.
- the height of one of the pads is equal to the depth of the pad groove.
- the height of the other pad is lower than the depth of the pad groove; in some examples, the surface of one pad is rough, and the surface of the other pad is relatively smooth; in some examples, the surface of one pad is triangular Sawtooth shape, the other surface is square wave sawtooth shape.
- the pad is deployed by providing a pad groove recessed upward at the bottom of the chip body, the height of the pad is less than or equal to the depth of the pad groove, and the side surface of the pad and the pad groove are ensured There is a gap between the sidewalls, so the pad in the flip-chip LED chip can be changed from the convex setting and the bottom of the chip body to the retracted setting and the bottom of the chip body, so that the solder paste can be used to solder the pad and the circuit board.
- the friction coefficient of the bottom surface and side surface of the pad in the flip-chip LED chip can be set to be relatively large.
- the bottom surface of the pad or the bottom surface and the side surface of the pad can be set in a zigzag shape.
- the contact surface area of the pad and the solder paste increases the friction.
- it can also make the surface of the pad and the solder paste more closely bite together, thereby enhancing the cutting force between the two and improving the electronics containing the flip-chip LED chip.
- the yield of the product can be set to be relatively large.
- the bottom surface of the pad or the bottom surface and the side surface of the pad can be set in a zigzag shape.
- the contact surface area of the pad and the solder paste increases the friction.
- it can also make the surface of the pad and the solder paste more closely bite together, thereby enhancing the cutting force between the two and improving the electronics containing the flip-chip LED chip.
- the yield of the product can be set to be relatively large.
- the flip-chip LED chip 90 includes a chip main body 91 and a pad 92, and the pad 92 includes an N-pole pad 921 and a P-pole pad 922.
- the N-pole pad 921 is integrated with the N-type current spreading layer 911 in the chip main body 91
- the P-pole pad 922 is integrated with the P-type current spreading layer 912 in the chip main body 91.
- a transparent protective layer 913 in addition to the N-type current spreading layer 911 and the P-type current spreading layer 912, a transparent protective layer 913, a light emitting layer 914, and an isolation band 915 may also be included.
- the N-type current spreading layer 911, the light-emitting layer 914, and the P-type current spreading layer 912 are sequentially arranged under the transparent protective layer 913 from top to bottom, and the transparent protective layer 913 is used for the N-type current spreading layer 911, The light-emitting layer 914 and the P-type current spreading layer 912 are protected. Therefore, it can be understood that, in this embodiment, the transparent protective layer 913 is required to have a relatively large hardness. In some examples of this embodiment, the transparent protective layer 913 may be a sapphire layer.
- a PN junction is formed between the N-type current spreading layer 911 and the P-type current spreading layer 912.
- the N-pole pad 921 and the P-pole pad 922 are isolated by an insulating band 915. It can be seen from FIG. 9 that the N-type current spreading layer 911 and the P-type current spreading layer 912, and the N-pole pad 921 and the P-pole pad 922 are isolated by an isolation band 915.
- the isolation band 915 shown in FIG. 9 is in the shape of an inverted "L", so, in fact, the isolation band 915 includes a vertical plane and a horizontal plane.
- the isolation band 915 can complete the isolation between the N-type current spreading layer 911 and the P-type current spreading layer 912, and between the N-pole pad 921 and the P-pole pad 922, but in order to ensure the During the soldering process, there is no connection between the two pads due to the solder paste. Therefore, the horizontal plane of the isolation band 915 needs to be isolated in the horizontal direction.
- the light-emitting layer 914 can emit light under the excitation of electric energy in the N-type current spreading layer 911 and the P-type current spreading layer 912.
- the color of the light-emitting layer 914 is related to the material of the current spreading layer (that is, it is related to the material of the N-pole pad 921 and the P-pole pad 922).
- the N-type current spreading layer 911 and the P-type current spreading layer The material of the layer 912 is gallium nitride material.
- the N-type current spreading layer 911 and the P-type current spreading layer 912 can also be made of other materials, such as gallium arsenide.
- the bottom of the chip body 91 is provided with corresponding pad grooves 910 for the N-pole pad 921 and the P-pole pad 922, and the two pads 92 each correspond to a pad groove 910.
- the land groove 910 is recessed upward, and the land 92 extends from the bottom of the land groove 910 toward the notch.
- the depth of the land groove 910 is slightly greater than the height of the land 92. Therefore, the land 92 It does not extend above the notch of the land groove 910.
- the sidewalls of the land groove 910 are vertical, there is a certain gap between the land 92 and the sidewall of the land groove 910, and the gap gradually increases from the bottom of the groove to the notch. In other words, the cross section of the pad 92 gradually decreases from the bottom of the groove to the notch.
- the molten solder paste can easily follow the gap between the pad 92 and the pad groove 910 during the soldering process of the flip-chip LED chip 90 Infiltration, so as to contact the side surface of the pad 92, increase the contact area with the pad 92, and thereby increase the intercepting force between the pad 92 and the solder paste.
- the friction coefficient of the surface of the pad 92 can also be set to be relatively large. Wavy, in this way, by changing the bottom and sides of the 90 pad 92 from a smooth plane to a wavy water pattern, the contact area between the flip-chip LED chip pad 92 and the solder paste can be increased, thereby improving the flip-chip The thrust of the LED chip ensures the quality and reliability of the product.
- the circuit board 100 includes a substrate 101 and at least one flip-chip LED chip 102, the structure of the flip-chip LED chip 102 can refer to the introduction in the foregoing embodiment, and will not be repeated here.
- the substrate 101 includes a circuit, and there is a chip installation area on the surface of the substrate 101, and the flip-chip LED chip 102 can be soldered in the chip installation area by solder paste, thereby achieving electrical connection with the circuit inside the substrate 101.
- the molten solder paste will not only bond with the bottom surface of the flip-chip 102 pad, but also penetrate into the gap between the pad and the side of the pad groove, thereby interacting with the solder.
- the side of the disc is combined. In this way, the contact area between the solder paste and the pad of the flip-chip LED chip 102 can be increased to a certain extent, thereby improving the firmness of the combination of the two.
- At least one of the bottom surface and the side surface of the pad in the flip-chip LED chip 102 is relatively rough, wavy and/or jagged, which not only increases the surface area of the pad in contact with the solder paste, Thereby increasing the friction, at the same time, it can also make the surface of the pad and the solder paste more closely bite together, thereby enhancing the cutting force between the two.
- the electronic device can be an outdoor LED display or various terminals.
- the terminals here can include, for example, mobile phones, tablet computers, notebook computers, handheld computers, and personal digital assistants ( PersonalDigitalAssistant, PDA), portable media players (PortableMediaPlayer, PMP), navigation devices, wearable devices, smart bracelets, pedometers and other mobile terminals, as well as fixed terminals such as digital TVs and desktop computers.
- the electronic device includes the circuit board shown in FIG. 10.
- the circuit board and the electronic device provided in this embodiment due to the improvement of the pad structure of the flip-chip LED chip applied therein, may be able to enhance product reliability, prolong product service life, and improve product quality.
- the flip-chip LED chips provided in the foregoing embodiments can be used in various light-emitting fields.
- they can be made into a backlight module and used in the display backlight field (which can be used in terminals such as TVs, monitors, and mobile phones).
- Backlight module which can be used in terminals such as TVs, monitors, and mobile phones.
- it can be applied to the backlight module.
- the display backlight field it can also be used in the key backlight field, shooting field, home lighting field, medical lighting field, decoration field, automobile field, transportation field, etc.
- the key backlight field When used in the key backlight field, it can be used as a key backlight light source for mobile phones, calculators, keyboards and other key devices; when used in the shooting field, it can be made into a camera flash; when used in the home lighting field, it can be made into a floor lamp or desk lamp , Lighting, ceiling lights, downlights, projection lights, etc.; when used in the field of medical lighting, it can be made into surgical lights, low-electromagnetic lighting, etc.; when used in the field of decoration, it can be made into various decorative lights, such as various colors Lamps, landscape lighting, advertising lamps; when used in the automotive field, it can be made into car lights, car indicator lights, etc.; when used in the traffic field, it can be made into various traffic lights, and can also be made into various street lights.
- the above-mentioned applications are only a few of the applications exemplified in this embodiment, and it should be understood that the application of the LED in this embodiment is not limited to the several fields of the above-ment
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
一种倒装LED芯片(20)、线路板以及电子设备,其中,倒装LED芯片(20)的芯片主体(21)底部设置有两个向上凹陷的焊盘槽(210),N极焊盘(211)与P极焊盘(222)各自设置在一个焊盘槽(210)的槽底,焊盘(22)的侧面与焊盘槽(210)的侧壁之间存在间隙,因此,在将倒装LED芯片(20)焊接到线路板的过程中,熔化的锡膏可以渗入到该间隙当中,与焊盘(22)的侧面结合起来,从而使得锡膏与焊盘(22)的接合更充分,提升了倒装LED芯片(20)与线路板焊接的可靠性,能够显著提升倒装LED芯片(20)的良品率。
Description
本发明涉及电子领域,尤其涉及一种倒装LED芯片、线路板以及电子设备。
对于应用MiniLED,固晶工序采用倒装印刷工艺:每张线路板上通常会有成千上万的焊点,甚至上百万个焊点,用于连接LED芯片。如此巨量的焊点,给MiniLED芯片的封装带来了很大的难度——由于超小空间密布的需求,MiniLED芯片的芯片尺寸为微米等级,但是当芯片的焊盘面积小于2000平方微米时,就会因为芯片的焊盘面积小,芯片与锡膏的接触面积小,进而导致芯片焊盘与锡膏之间的结合力偏小,从而造成产品开路、缺亮、闪烁等问题,严重影响产品的可靠性。
本发明实施例提供的倒装LED芯片、线路板以及电子设备,主要解决的技术问题是:由于MiniLED芯片的焊盘面积小,因此导致芯片焊盘与线路板的焊接结合不可靠,产品良率低的问题。
为解决上述技术问题,本发明实施例提供一种倒装LED芯片,包括芯片主体以及设置于所述芯片主体底部的焊盘,所述焊盘包括N极焊盘与P极焊盘;所述芯片主体底部设置有两个向上凹陷的焊盘槽,所述N极焊盘与所述P极焊盘各自设置在一个焊盘槽的槽底,所述焊盘的侧面与所述焊盘槽的侧壁之间存在间隙。
可选地,所述焊盘的高度h与所述焊盘槽的深度d间差值的绝对值小于等于20um。
可选地,所述焊盘的高度h小于等于所述焊盘槽的深度d。
可选地,焊盘的横截面积自焊盘槽的槽底到远离焊盘槽的槽口逐渐减小。
可选地,焊盘的纵剖面呈倒立的等腰梯形或矩形。
可选地,所述焊盘槽的侧壁垂直所述芯片主体的底面,或者所述焊盘槽的横截面自槽底至槽口逐渐增大。
可选地,所述焊盘的侧面与所述焊盘槽的侧壁之间的间隙,自所述焊盘槽的槽底到远离所述焊盘槽的槽口逐渐变大。
可选地,所述焊盘的底部的摩擦系数大于所述芯片主体底部的摩擦系数。
可选地,焊盘底面和/或侧面呈锯齿状或波浪状。
本发明实施例还提供一种线路板,包括基板与至少一个如上任一项的倒装LED芯片;倒装LED芯片的焊盘焊接在基板的芯片设臵区域,与基板内的电路电连接。
本发明实施例还提供一种电子设备,包括如上的线路板。
本发明的有益效果是:
本发明实施例提供一种倒装LED芯片、线路板以及电子设备,其中,倒装LED芯片包括芯片主体以及设置在芯片主体底部的焊盘。焊盘包括N极焊盘及P极焊盘。芯片主体底部设臵有两个向上凹陷的焊盘槽,N极焊盘与P极焊盘各自设置在一个焊盘槽的槽底,焊盘的侧面与焊盘槽的侧壁之间存在间隙,因此,在将倒装LED芯片焊接到线路板的过程中,熔化的锡膏可以渗入到该间隙当中,与焊盘的侧面结合起来,从而使得锡膏与焊盘的接合更充分,提升了倒装LED芯片与线路板焊接的可靠性,能够显著提升倒装LED芯片的良品率。对于应用了该倒装LED芯片的线路板及电子设备而言,能够增强产品可靠性,延长产品的使用寿命,提升产品品质。
本发明其他特征和相应的有益效果在说明书的后面部分进行阐述说明,且应当理解,至少部分有益效果从本发明说明书中的记载变的显而易见。
图1为相关技术中的一种倒装LED芯片的结构示意图;
图2a为本发明实施例一中提供的第一种倒装LED芯片的结构示意图;
图2b为本发明实施例一中提供的第二种倒装LED芯片的结构示意图;
图3a为本发明实施例一中提供的第三种倒装LED芯片的结构示意图;
图3b为本发明实施例一中提供的第四种倒装LED芯片的结构示意图;
图4为本发明实施例一中提供的第五种倒装LED芯片的结构示意图;
图5为本发明实施例一中提供的第六种倒装LED芯片的结构示意图;
图6为本发明实施例一中示出的焊盘的一种结构示意图;
图7为本发明实施例一中提供的第七种倒装LED芯片的结构示意图;
图8为本发明实施例一中提供的第八种倒装LED芯片的结构示意图;
图9为本发明实施例二中提供的一种倒装LED芯片的结构示意图;
图10为本发明实施例三中提供的一种线路板的结构示意图。
为了使本发明的目的、技术方案及优点更加清楚明白,下面通过具体实施方式结合附图对本发明实施例作进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。
实施例一:
请参见图1,图1中示出了相关技术中的倒装LED芯片的一种结构示意图:倒装LED芯片10包括芯片主体11与焊盘12,其中焊盘12内包括一个N极焊盘与一个P极焊盘,N极焊盘与P极焊盘之间通过绝缘的隔离带隔离。芯片主体11内可以包括蓝宝石层、N型电流扩展层、P型电流扩展层,不过图1中没有示出这些细节。从图1中可以看出,焊盘12以外凸的方式设臵在芯片主体11的底部,焊盘12在焊接的过程中,与锡膏接触的主要就是焊盘12的底部。不过,由于倒装LED芯片10的尺寸很小,焊盘12的尺寸更小,所以,锡膏与焊盘12的实际接触面积不大,这就导致二者的结合不够牢靠,焊接完成以后,倒装LED芯片10极容易从线路板上脱落的问题,为了解决这个问题,本实施例提供一种新的倒装LED芯片,请参见图2a示出的倒装LED芯片的一种结构示意图:
倒装LED芯片20包括芯片主体21以及设置于芯片主体底部的焊盘22。芯片主体21内可以包括N型电流扩展层与P型电流扩展层,并且,N型电流扩展层与P型电流扩展层间形成P-N结。当然,在芯片主体21内还可以包括透明保护层、发光层等。
同图1示出的倒装LED芯片10的焊盘12类似,焊盘22同样包括N极焊盘221,及P极焊盘222,N极焊盘221与P极焊盘222之间通过绝缘材料制成的隔离带相互隔离。
焊盘22设置在芯片主体21的底部,例如,在图2a当中,芯片主体21底部设置有两个向上凹陷的焊盘槽210,N极焊盘221与P极焊盘222各自设置在一个焊盘槽210的槽底,且焊盘22的侧面与焊盘槽210的侧壁之间存在间隙。在利用锡膏将倒装LED芯片20焊接到线路板上的时候,熔化了的锡膏不仅可以与焊盘22的底面结合,并且,其可以顺着焊盘22侧面与焊盘槽210侧壁间的间隙渗入,从而与焊盘22的侧壁以及焊盘槽210的侧壁结合在一起。通过这种方式,可以增加锡膏与焊盘22间的接触面积,从而提升锡膏与焊盘22直接结合的紧密程度,增强焊接的可靠性。
在本实施例的一些示例中,焊盘22的高度h还小于或等于焊盘槽210的深度d,所以,焊盘22处于焊盘槽210内,由于焊盘22设置在向上凹陷的焊盘槽210内,因此,焊盘22基本上就是“镶嵌”在芯片主体21的底部。
在本实施例的一些示例当中,焊盘22可以伸出焊盘槽210,也即焊盘槽210的深度d小于焊盘22的高度h,可选地,在一些示例当中,只要保证h-d的值小于等于20um即可。毫无疑义的是,h-d小于等于20um,h小于等于d自然是满足条件的,但在一些示例中,h也可以略微大于d,只要不超过20um即可。例如,在图3a当中,焊盘22略微伸出焊盘槽210的槽口。不过,在本实施例的其他一些示例当中,焊盘22的高度基本都小于等于焊盘槽210的深度,例如图3b当中焊盘槽210的深度与焊盘22的高度相等。而图2a中焊盘22的高度小于焊盘槽210的深度。应当理解的是,相较于焊盘22高度等于焊盘槽210的深度或者是大于焊盘槽210深度的情况,图2a中示出的倒装LED芯片20在焊接的过程中,锡膏更容易渗入到焊盘槽21侧壁与焊盘22之间的间隙中,因此,焊盘22缩在焊盘槽210内,有助于进一步提升焊接可靠性。
在本实施例的一些示例的倒装LED芯片当中,焊盘22的纵剖面可以呈矩形,例如,在图4示出的倒装LED芯片当中,因此,焊盘22本身可以是长方体、正方体、棱柱体或者圆柱体等,在这种情况下,焊盘22各处的横截面形状、面积相同。但在本实施例的另外一些示例当中,请继续参见图2a示出的倒装LED芯片,焊盘各处的横截面不完全一样,在图2a当中,焊盘22的横截面从上至下逐渐减小,也即从靠近焊盘槽210槽底到远离槽底的过程中逐渐减小。从焊盘22的横截面来看,图2a中焊盘22呈倒梯形。由于该倒装LED芯片当中,焊盘槽210的侧壁竖直(即垂直于芯片主体21的底面),因此焊盘槽210与焊盘22之间的间隙从上至下逐渐增大,这也有利于导流锡膏,方便锡膏渗入。在图2a中,焊盘的纵剖面呈倒立的等腰梯形,但在本实施例的其他一些示例当中,焊盘22的纵剖面也可以不是倒立的等腰梯形,而是普通梯形。
在本实施例的一些示例当中,焊盘槽的侧壁也可以不是竖直的,例如,在图2b当中,示出了一种LED芯片,该LED芯片中,焊盘槽的横截面积自槽底至槽口逐渐增大,换言之,自槽底至槽口,焊盘槽的侧壁向着远离焊盘的方向倾斜。
虽然在图2b当中,焊盘呈倒梯形,但毫无疑义的是,在本实施例的其他一些示例当中,焊盘的纵剖面也可以呈矩形,焊盘22本身可以是长方体、正方体、棱柱体或者圆柱体等。
可以理解的是,为了提升锡膏与焊盘之间结合的紧密程度,也可以通过改善焊盘表面的摩擦系数来实现,具体地,表面粗糙的焊盘相较于表面光滑的焊盘而言,能够与锡膏更紧密地结合在一起。这一方面是因为摩擦系数大能够提升焊盘与锡膏之间的摩擦力,通过二者间相互作用力的增强来提升结合的紧密程度;另一方面,摩擦系数的增加必定意味着焊盘表面凹凸不平,例如,焊盘某一位置上凹陷,则意味着锡膏在对应位置会凸起,而焊盘在某一位置上凸起,则意味着锡膏在对应位置会凹陷,这样可以使得固化后的锡膏与焊盘互相“咬合”或者“吻合”,从而增强了二者之间的截断力。所以,在本实施例的一些示例当中,为了让倒装LED芯片能够更可靠地焊接在线路板上,可以将焊盘底部的摩擦系数设臵得比较大,例如,可以使得焊盘底部的摩擦系数大于与焊盘一体的电流扩展层,例如,N极焊盘底部的摩擦系数大于N型电流扩展层,P极焊盘底部的摩擦系数大于P型电流扩展层。在本实施例的一些示例当中,焊盘底部的摩擦系数大于N型电流扩展层与P型电流扩展层的摩擦系数。
请结合图5示出的一种倒装LED芯片的结构示意图:倒装LED芯片50中焊盘52与芯片主体51之间的设置方式类似与图1倒装LED芯片10中的设置方式,不过,在图5当中,倒装LED芯片50焊盘的底部呈锯齿状或波浪状。应当明白的是,在图5当中,虽然焊盘52的底面呈三角锯齿状,但在本实施例的其他一些示例当中,焊盘52的底面也可以呈方波锯齿状,甚至是三角锯齿状与方波锯齿状的结合,或者锯齿状与波浪状的结合,例如,在图6中示出了另外一种焊盘的结构示意图。当然,在本实施例的其他一些示例当中,焊盘底面的锯齿还可以是其他形状的,这里不再枚举。
在本实施例的一些示例当中,还可以将这种增加焊盘表面摩擦系数的方案应用于本实施例提供的倒装LED芯片当中,例如,在图7当中,倒装LED芯片70当中,焊盘72的底面粗糙,摩擦系数大于对应的电流扩展层。所以,对于倒装LED芯片70而言,不仅可以通过让锡膏渗入焊盘72与焊盘槽710之间的间隙的方式来提升焊盘72与锡膏间结合紧密程度,而且,利用焊盘72底面锯齿与锡膏的吻合,也可以进一步增加焊盘72与锡膏之间的截断力,从而提升倒装LED芯片70焊接的可靠性。
虽然,在图5-图7当中仅仅增加了焊盘底面的摩擦系数,但在本实施例的一些示例当中,除了可以增大焊盘底部的摩擦系数以外,还可以增加焊盘侧面的摩擦系数,或者是将增大焊盘底部的摩擦系数与增大焊盘侧面的摩擦系数相结合,例如,在本实施例的一些示例当中,如图8所示,焊盘侧面也可以呈锯齿状,如三角锯齿状、方波锯齿状或者是三角锯齿与方波锯齿的结合。
应当理解的是,本实施例中一个LED芯片中包括两个焊盘,这两个焊盘的形态可以不完全一样,例如,在一些示例当中,其中一个焊盘的高度等于焊盘槽的深度,另一个焊盘的高度低于焊盘槽的深度;在一些示例当中,其中一个焊盘的表面比较粗糙,另一个焊盘的表面的相对光滑;在一些示例当中,一个焊盘表面呈三角锯齿状,另一个表面呈方波锯齿状。
本发明实施例提供的倒装LED芯片,通过在芯片主体底部设置向上凹陷的焊盘槽来部署焊盘,焊盘的高度小于或等于焊盘槽的深度,并且保证焊盘侧面与焊盘槽侧壁间存在间隙,所以,可以使得倒装LED芯片中的焊盘由外凸设置与芯片主体底部变为内缩设置与芯片主体底部,这样可以使得锡膏在将焊盘与线路板焊接在一起的时候,可以沿着焊盘与焊盘槽之间的间隙渗入,从而与焊盘的侧面以及焊盘槽的侧壁结合在一起,进而增加焊盘与锡膏之间作用力,提升焊盘与线路板结合的可靠程度。
更进一步地,还可以将倒装LED芯片中焊盘的底面、侧面的摩擦系数设置得比较大,例如,将焊盘底面或者焊盘的底面与侧面设置成锯齿状,这样一方面可以通过增加焊盘与锡膏接触的表面积,从而增加摩擦力,同时,也可以让焊盘表面与锡膏更紧密地咬合在一起,从而增强二者间的截断力,提升包含该倒装LED芯片的电子产品的良品率。
实施例二:
为了让本领域技术人员对前述实施例中提供的倒装LED芯片的优点与细节更清楚,本实施例将结合示例对该倒装LED芯片进行更详细的描述:
请参见图9示出的倒装LED芯片90,在该倒装LED芯片90中包括芯片主体91与焊盘92,焊盘92当中包括N极焊盘921与P极焊盘922。N极焊盘921与芯片主体91当中的N型电流扩展层911一体,而P极焊盘922则与芯片主体91当中的P型电流扩展层912一体。
在芯片主体91当中,除了N型电流扩展层911、P型电流扩展层912以外,还可以包括透明保护层913、发光层914以及隔离带915。其中,N型电流扩展层911、发光层914、P型电流扩展层912从上至下依次设置在透明保护层913之下,透明保护层913用于对其下的N型电流扩展层911、发光层914、P型电流扩展层912进行保护,所以,可以理解的是,在本实施例中,要求透明保护层913具有较大的硬度。在本实施例的一些示例当中,透明保护层913可以为蓝宝石层。
在本实施例中N型电流扩展层911与P型电流扩展层912间形成PN结,同样地,N极焊盘921与P极焊盘922之间通过绝缘带915隔离。从图9中可以看出,N型电流扩展层911与P型电流扩展层912之间,以及N极焊盘921与P极焊盘922之间是通过隔离带915隔离的。图9中示出的隔离带915呈倒“L”形,所以,实际上,隔离带915包括一个竖直平面以及一个水平面。其中,通过竖直平面的隔离,隔离带915就可以完成N型电流扩展层911与P型电流扩展层912间,以及N极焊盘921与P极焊盘922间的隔离,但为了保证在焊接过程中,两个焊盘之间不会因为锡膏连通,所以,还需要隔离带915的水平面在水平方向上进行隔离。
当倒装LED芯片90焊接到线路板上并且通电之后,发光层914可以在N型电流扩展层911与P型电流扩展层912中电能的激发下发光。发光层914发光的颜色与电流扩展层的材料有关(也即与N极焊盘921与P极焊盘922的材料有关),在本实施例中,N型电流扩展层911与P型电流扩展层912的材料均为氮化镓材料,当然,在本实施例的另外一些示例当中,N型电流扩展层911与P型电流扩展层912也可以由其他材料,例如砷化镓等制成。
在本实施例当中,芯片主体91的底部分别为N极焊盘921与P极焊盘922设臵有对应的焊盘槽910,两个焊盘92各自对应一个焊盘槽910。焊盘槽910向上凹陷,焊盘92从焊盘槽910的槽底向着槽口延伸,不过,在本实施例中,焊盘槽910的深度略微大于焊盘92的高度,因此,焊盘92不会延伸到焊盘槽910的槽口之上。在本实施例的一些示例当中,焊盘槽910的侧壁竖直,在焊盘92与焊盘槽910的侧壁之间存在一定的间隙,并且该间隙从槽底到槽口逐渐增大,换言之,焊盘92的横截面从槽底到槽口逐渐减小。
由于焊盘92镶嵌、内缩在焊盘槽910当中,所以,在对倒装LED芯片90进行焊接的过程中,熔化的锡膏很容易顺着焊盘92与焊盘槽910之间的间隙渗入,从而与焊盘92的侧面接触,增大与焊盘92之间的接触面积,进而增加焊盘92与锡膏之间的截断力。
为了进一步增强倒装LED芯片90焊接的可靠性,在本实施例中,还可以将焊盘92表面的摩擦系数设置得比较大,例如,在图9当中,焊盘92的侧面与底面均呈波浪状,这样,通过改变将90焊盘92的底部及侧面由光滑的平面改成波浪水纹状,可以使得使倒装LED芯片焊盘92与锡膏的接触面积增大,从而提升倒装LED芯片的推力,保证了产品的质量和信赖性。
实施例三:
本实施例提供一种线路板,请参见图10,该线路板100包括基板101与至少一个倒装LED芯片102,倒装LED芯片102的结构可以参见前述实施例中的介绍,这里不再赘述。在基板101中包括电路,而在基板101的表面有芯片设置区域,倒装LED芯片102可以通过锡膏焊接在该芯片设置区域中,从而与基板101内部的电路实现电连接。
在将倒装LED芯片102焊接到芯片设置区域的时候,熔化的锡膏不仅会与倒装芯片102焊盘的底面向结合,而且还会渗入焊盘与焊盘槽侧面的间隙,从而与焊盘侧面结合。这样可以在一定程度上增加锡膏与倒装LED芯片102焊盘的接触面积,进而提升二者结合的牢固程度。
更进一步地,由于一些示例当中,倒装LED芯片102中焊盘的底面和侧面种的至少一个比较粗糙,呈波浪状和/或锯齿状,这样不仅可以增加焊盘与锡膏接触的表面积,从而增加摩擦力,同时,也可以让焊盘表面与锡膏更紧密地咬合在一起,从而增强二者间的截断力。
另一方面,本实施例还提供一种电子设备,该电子设备可以是户外LED显示屏或者是各种终端,这里的终端可以包括诸如手机、平板电脑、笔记本电脑、掌上电脑、个人数字助理(PersonalDigitalAssistant,PDA)、便捷式媒体播放器(PortableMediaPlayer,PMP)、导航装置、可穿戴设备、智能手环、计步器等移动终端,以及诸如数字TV、台式计算机等固定终端。在本实施例中,电子设备当中包括图10中示出的线路板。
本实施例提供的线路板与电子设备,由于其中应用的倒装LED芯片的焊盘结构的改进,可以能够增强产品可靠性,延长产品的使用寿命,提升产品品质。
毫无疑义地是,前述各实施例中所提供的倒装LED芯片可以应用于各种发光领域,例如其可以制作成背光模组应用于显示背光领域(可以是电视、显示器、手机等终端的背光模组)。此时可以将其应用于背光模组。除了可应用于显示背光领域外,还可应用于按键背光领域、拍摄领域、家用照明领域、医用照明领域、装饰领域、汽车领域、交通领域等。应用于按键背光领域时,可以作为手机、计算器、键盘等具有按键设备的按键背光光源;应用于拍摄领域时,可以制作成摄像头的闪光灯;应用于家用照明领域时,可以制作成落地灯、台灯、照明灯、吸顶灯、筒灯、投射灯等;应用于医用照明领域时,可以制作成手术灯、低电磁照明灯等;应用于装饰领域时可以制作成各种装饰灯,例如各种彩灯、景观照明灯、广告灯;应用于汽车领域时,可以制作成汽车车灯、汽车指示灯等;应用于交通领域时,可以制成各种交通灯,也可以制成各种路灯。上述应用仅仅是本实施例所示例的几种应用,应当理解的是本实施例中的LED的应用并不限于上述示例的几种领域。
以上内容是结合具体的实施方式对本发明实施例所作的进一步详细说明,不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干简单推演或替换,都应当视为属于本发明的保护范围。
Claims (11)
- 一种倒装LED芯片,其特征在于,包括芯片主体以及设置于所述芯片主体底部的焊盘,所述焊盘包括 N 极焊盘与P极焊盘;所述芯片主体底部设置有两个向上凹陷的焊盘槽,所述N极焊盘与所述P极焊盘各自设置在一个所述焊盘槽的槽底,所述焊盘的侧面与所述焊盘槽的侧壁之间存在间隙。
- 如权利要求1所述的倒装LED芯片,其特征在于,所述焊盘的高度h与所述焊盘槽的深度d间差值的绝对值小于等于20um。
- 如权利要求2所述的倒装LED芯片,其特征在于,所述焊盘的高度h小于等于 所述焊盘槽的深度d。
- 如权利要求1所述的倒装LED芯片,其特征在于,所述焊盘的横截面积自所述焊盘槽的槽底到远离所述焊盘槽的槽口逐渐减小。
- 如权利要求1所述的倒装LED芯片,其特征在于,所述焊盘的纵剖面呈倒立的等腰梯形或矩形。
- 如权利要求1所述的倒装LED芯片,其特征在于,所述焊盘槽的侧壁垂直所述芯片主体的底面,或者所述焊盘槽的横截面自槽底至槽口逐渐增大。
- 如权利要求1所述的倒装LED芯片,其特征在于,所述焊盘的侧面与所述焊盘槽的侧壁之间的间隙,自所述焊盘槽的槽底到远离所述焊盘槽的槽口逐渐变大。
- 如权利要求1-7任一项所述的倒装LED芯片,其特征在于,所述焊盘的底部的摩擦系数大于所述芯片主体底部的摩擦系数。
- 如权利要求8所述的倒装LED芯片,其特征在于,所述焊盘底面和/或侧面呈锯齿状或波浪状。
- 一种线路板,其特征在于,包括基板与至少一个如权利要求1-9任一项所述的倒装LED芯片;所述倒装LED芯片的焊盘焊接在所述基板的芯片设置区域,与所述基板内的电路电连接。
- 一种电子设备,其特征在于,包括如权利要求10所述的线路板。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP20895038.6A EP4071837A4 (en) | 2019-12-03 | 2020-12-02 | FLIP LED CHIP, CIRCUIT BOARD AND ELECTRONIC DEVICE |
US17/830,747 US20220293574A1 (en) | 2019-12-03 | 2022-06-02 | Led chip module and method for manufacturing led chip module |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911222587.XA CN112909153B (zh) | 2019-12-03 | 2019-12-03 | 倒装led芯片、线路板以及电子设备 |
CN201911222587.X | 2019-12-03 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2020/135804 Continuation-In-Part WO2021115439A1 (zh) | 2019-12-03 | 2020-12-11 | 一种印刷网以及led焊盘印刷方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US17/830,747 Continuation-In-Part US20220293574A1 (en) | 2019-12-03 | 2022-06-02 | Led chip module and method for manufacturing led chip module |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2021110065A1 true WO2021110065A1 (zh) | 2021-06-10 |
Family
ID=76104702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2020/133441 WO2021110065A1 (zh) | 2019-12-03 | 2020-12-02 | 倒装led芯片、线路板以及电子设备 |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP4071837A4 (zh) |
CN (2) | CN115714157A (zh) |
WO (1) | WO2021110065A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116435445A (zh) * | 2023-06-13 | 2023-07-14 | 山西中科潞安紫外光电科技有限公司 | 具有高推力值的发光二极管芯片及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020167085A1 (en) * | 1999-04-06 | 2002-11-14 | Shinji Ohuchi | Semiconductor device and method of fabricating the same |
US20030222353A1 (en) * | 2002-05-31 | 2003-12-04 | Shigeru Yamada | Semiconductor device |
US20150056755A1 (en) * | 2012-06-13 | 2015-02-26 | SK Hynix Inc. | Electronic device packages having bumps and methods of manufacturing the same |
US20190006559A1 (en) * | 2017-06-30 | 2019-01-03 | PlayNitride Inc. | Micro light emitting diode and display panel |
CN109768146A (zh) * | 2018-12-29 | 2019-05-17 | 中山市木林森电子有限公司 | 一种倒装led封装件及其制造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101877383A (zh) * | 2006-09-15 | 2010-11-03 | 晶元光电股份有限公司 | 发光装置 |
CN101150156B (zh) * | 2006-09-22 | 2012-05-30 | 晶元光电股份有限公司 | 发光元件及其制造方法 |
DE112010003715T8 (de) * | 2009-09-20 | 2013-01-31 | Viagan Ltd. | Baugruppenbildung von elektronischen Bauelementen auf Waferebene |
TW201248945A (en) * | 2011-05-31 | 2012-12-01 | Chi Mei Lighting Tech Corp | Light-emitting diode device and method for manufacturing the same |
US9231178B2 (en) * | 2012-06-07 | 2016-01-05 | Cooledge Lighting, Inc. | Wafer-level flip chip device packages and related methods |
KR101926361B1 (ko) * | 2012-06-13 | 2018-12-07 | 삼성전자주식회사 | 반도체 발광소자, 발광장치 및 반도체 발광소자 제조방법 |
US9318674B2 (en) * | 2013-02-05 | 2016-04-19 | Cree, Inc. | Submount-free light emitting diode (LED) components and methods of fabricating same |
CN104091874B (zh) * | 2014-07-01 | 2017-01-18 | 天津三安光电有限公司 | 发光二极管 |
CN205564813U (zh) * | 2016-03-14 | 2016-09-07 | 京东方光科技有限公司 | 一种发光二极管装置及显示装置 |
CN107275305B (zh) * | 2017-07-13 | 2020-03-10 | 郑州云海信息技术有限公司 | 一种qfn芯片 |
US10868217B2 (en) * | 2018-03-07 | 2020-12-15 | Kunshan New Flat Panel Display Technology Center Co., Ltd. | LED chips, method of manufacturing the same, and display panels |
US10861834B2 (en) * | 2018-03-08 | 2020-12-08 | Kunshan New Flat Panel Display Technology Center Co., Ltd. | Micro-LED chips, display screens and methods of manufacturing the same |
CN208014728U (zh) * | 2018-03-29 | 2018-10-26 | 昆山工研院新型平板显示技术中心有限公司 | 显示装置及其发光二极管芯片 |
CN108987557A (zh) * | 2018-07-04 | 2018-12-11 | 佛山市国星半导体技术有限公司 | 一种倒装led芯片及其制作方法、led器件 |
CN109980059A (zh) * | 2019-04-17 | 2019-07-05 | 厦门乾照半导体科技有限公司 | 一种电极具有开口的led芯片结构 |
-
2019
- 2019-12-03 CN CN202211391175.0A patent/CN115714157A/zh active Pending
- 2019-12-03 CN CN201911222587.XA patent/CN112909153B/zh active Active
-
2020
- 2020-12-02 WO PCT/CN2020/133441 patent/WO2021110065A1/zh unknown
- 2020-12-02 EP EP20895038.6A patent/EP4071837A4/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020167085A1 (en) * | 1999-04-06 | 2002-11-14 | Shinji Ohuchi | Semiconductor device and method of fabricating the same |
US20030222353A1 (en) * | 2002-05-31 | 2003-12-04 | Shigeru Yamada | Semiconductor device |
US20150056755A1 (en) * | 2012-06-13 | 2015-02-26 | SK Hynix Inc. | Electronic device packages having bumps and methods of manufacturing the same |
US20190006559A1 (en) * | 2017-06-30 | 2019-01-03 | PlayNitride Inc. | Micro light emitting diode and display panel |
CN109768146A (zh) * | 2018-12-29 | 2019-05-17 | 中山市木林森电子有限公司 | 一种倒装led封装件及其制造方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP4071837A4 * |
Also Published As
Publication number | Publication date |
---|---|
EP4071837A4 (en) | 2024-01-03 |
CN115714157A (zh) | 2023-02-24 |
CN112909153A (zh) | 2021-06-04 |
EP4071837A1 (en) | 2022-10-12 |
CN112909153B (zh) | 2022-12-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI707484B (zh) | 發光裝置 | |
CN102201525B (zh) | 发光器件封装及具有该发光器件封装的照明系统 | |
EP3415807B1 (en) | Illumination device | |
CN102376855B (zh) | 发光器件和具有发光器件的照明系统 | |
CN102376853B (zh) | 发光器件和具有该发光器件的照明系统 | |
JP6283483B2 (ja) | 発光素子及びこれを備えた照明システム | |
US9496465B2 (en) | Light emitting device | |
US20160201875A1 (en) | Optical lens, light emitting module and light unit having the same | |
CN101877382B (zh) | 发光器件封装和包括该发光器件封装的照明系统 | |
TW201135126A (en) | Light emitting device and light unit using the same | |
WO2017156890A1 (zh) | 一种发光二极管、发光装置及显示装置 | |
CN102201504A (zh) | 发光器件和具有发光器件的照明单元 | |
US7811843B1 (en) | Method of manufacturing light-emitting diode | |
TWM453969U (zh) | 發光裝置 | |
JP2008130628A (ja) | 液晶表示装置 | |
JP2011176234A (ja) | 半導体発光装置 | |
WO2021110065A1 (zh) | 倒装led芯片、线路板以及电子设备 | |
KR101943824B1 (ko) | 발광소자, 발광 소자 패키지 및 조명 시스템 | |
CN103715338A (zh) | 发光器件 | |
TWI705586B (zh) | 發光裝置 | |
JP2014011461A (ja) | 発光ダイオードライトバー | |
CN202905029U (zh) | 一种led全彩色显示屏 | |
CN102194962A (zh) | 侧向发光之半导体组件封装结构 | |
KR102194803B1 (ko) | 발광 소자 패키지 | |
CN102339819B (zh) | 发光二极管封装结构及其形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 20895038 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 2020895038 Country of ref document: EP Effective date: 20220704 |