WO2021109232A1 - 彩膜基板的制备方法及彩膜基板 - Google Patents

彩膜基板的制备方法及彩膜基板 Download PDF

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Publication number
WO2021109232A1
WO2021109232A1 PCT/CN2019/125810 CN2019125810W WO2021109232A1 WO 2021109232 A1 WO2021109232 A1 WO 2021109232A1 CN 2019125810 W CN2019125810 W CN 2019125810W WO 2021109232 A1 WO2021109232 A1 WO 2021109232A1
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Prior art keywords
quantum dot
layer
photoresist layer
substrate
dot layer
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Ceased
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PCT/CN2019/125810
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English (en)
French (fr)
Inventor
陈杰
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TCL China Star Optoelectronics Technology Co Ltd
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TCL China Star Optoelectronics Technology Co Ltd
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Priority to US16/627,292 priority Critical patent/US11513269B2/en
Publication of WO2021109232A1 publication Critical patent/WO2021109232A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/206—Filters comprising particles embedded in a solid matrix
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M3/00—Printing processes to produce particular kinds of printed work, e.g. patterns
    • B41M3/003—Printing processes to produce particular kinds of printed work, e.g. patterns on optical devices, e.g. lens elements; for the production of optical devices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Definitions

  • This application relates to the field of display technology, in particular to a method for preparing a color filter substrate and a color filter substrate.
  • the embodiments of the present application provide a method for preparing a color filter substrate and a color filter substrate, so as to solve the problem that the existing quantum dot color filter substrate needs to use an additional mask area to pattern the quantum dot layer during the preparation process, resulting in higher manufacturing costs.
  • the embodiment of the present application provides a method for preparing a color filter substrate, which includes the following steps:
  • the substrate including a first sub-pixel area, a second sub-pixel area, and a third sub-pixel area;
  • the quantum dot layer covers the substrate and the first photoresist layer, and the quantum dot layer includes red quantum dots and green quantum dots;
  • a patterned second photoresist layer and a third photoresist layer are sequentially formed on the quantum dot layer, the second photoresist layer is arranged corresponding to the second sub-pixel area, and the third photoresist layer corresponds to the The third sub-pixel area is arranged, the second photoresist layer is a red photoresist layer, and the third photoresist layer is a green photoresist layer;
  • the forming a quantum dot layer on the substrate includes the following steps:
  • the solvent is one of petroleum ether, dichloromethane or ethyl acetate.
  • the quantum dot layer is quenched with a quencher, so that the shielded part of the quantum dot layer forms a first quantum dot layer, and the unshielded part of the quantum dot layer is quenched by quantum dots A second quantum dot layer is formed.
  • the quencher is one of 12-alkyl mercaptan, 14-alkyl mercaptan or pyridine solution.
  • the method further includes the following steps:
  • a black matrix is formed on the substrate.
  • the embodiment of the present application also provides a method for preparing a color filter substrate, which includes the following steps:
  • the substrate including a first sub-pixel area, a second sub-pixel area, and a third sub-pixel area;
  • a quantum dot layer is formed on the substrate, the quantum dot layer covers the substrate and the first photoresist layer, the quantum dot layer includes at least two kinds of quantum dots, and the light-emitting colors of the at least two quantum dots Different from the light output color of the first photoresist layer;
  • a patterned second photoresist layer and a third photoresist layer are sequentially formed on the quantum dot layer, the second photoresist layer is arranged corresponding to the second sub-pixel area, and the third photoresist layer corresponds to the The third sub-pixel area is set;
  • the second photoresist layer and the third photoresist layer are used as shielding layers, and the quantum dot layer is quenched to invalidate the quantum dots that are not shielded by the quantum dot layer.
  • the forming a quantum dot layer on the substrate includes the following steps:
  • the solvent is one of petroleum ether, dichloromethane or ethyl acetate.
  • the quantum dot layer is quenched with a quencher, so that the shielded part of the quantum dot layer forms a first quantum dot layer, and the unshielded part of the quantum dot layer is quenched by quantum dots A second quantum dot layer is formed.
  • the quencher is one of 12-alkyl mercaptan, 14-alkyl mercaptan or pyridine solution.
  • the first photoresist layer is a blue photoresist layer
  • the second photoresist layer is a red photoresist layer
  • the third photoresist layer is a green photoresist layer.
  • Resistance layer; the quantum dot layer includes red quantum dots and green quantum dots.
  • the method further includes the following steps:
  • a black matrix is formed on the substrate.
  • the embodiment of the present application also relates to a color filter substrate, which includes:
  • a substrate including a first sub-pixel area, a second sub-pixel area, and a third sub-pixel area;
  • a first photoresist layer where the first photoresist layer is disposed in a first sub-pixel area on the substrate;
  • a quantum dot layer is disposed on the substrate and covers the substrate and the first photoresist layer, the quantum dot layer includes at least two kinds of quantum dots, and the at least two kinds of quantum dots emit light The colors are respectively different from the light-emitting colors of the first photoresist layer;
  • a third photoresist layer, the third photoresist layer is disposed on a part of the quantum dot layer corresponding to the third sub-pixel area;
  • the quantum dot layer includes a first quantum dot layer disposed on the second sub-pixel area and the third sub-pixel area and a second quantum dot layer outside the first quantum dot layer; under illumination The quantum dots in the first quantum dot layer are excited to emit fluorescence of a corresponding color, and the quantum dots in the second quantum dot layer are quenched into a light-transmitting state.
  • the first photoresist layer is a blue photoresist layer
  • the second photoresist layer is a red photoresist layer
  • the third photoresist layer is a green photoresist layer
  • the quantum dot layer includes red quantum dots and green quantum dots.
  • the color filter substrate further includes a black matrix, and the black matrix is disposed between the substrate and the quantum dot layer.
  • the refractive index of the substrate is greater than the refractive index of the quantum dot layer.
  • the preparation method of the color filter substrate of the present application is to form a quantum dot layer covering the substrate and the first photoresist layer on the substrate, then form the second photoresist layer and the third photoresist layer on the quantum dot layer, and finally use the second
  • the photoresist layer and the third photoresist layer are shielding layers, and the quantum dot layer is quenched to invalidate the exposed part of the quantum dot layer. That is, the part of the quantum dot layer covering the first photoresist layer loses the function of emitting fluorescence, and the part of the quantum dot layer corresponding to the second photoresist layer and the third photoresist layer retains the function of emitting fluorescence.
  • the second photoresist layer and the third photoresist layer are used as shielding layers to quench the quantum dot layer, which saves the process of forming a patterned quantum dot layer by using a photomask , Thereby saving the photomask, thereby reducing the cost.
  • FIG. 1 is a flowchart of a method for preparing a color filter substrate according to an embodiment of the application
  • FIGS. 1A-1F are structural schematic diagrams of steps S1-S6 of a method for preparing a color filter substrate according to an embodiment of the application in turn;
  • step S4 of the method for preparing a color filter substrate according to an embodiment of the application
  • FIG. 3 is a schematic diagram of the structure of a color filter substrate according to an embodiment of the application.
  • Figure 1 is a flowchart of a method for preparing a color filter substrate according to an embodiment of the application
  • Figures 1A-1F are steps S1-S6 of the method for preparing a color filter substrate according to an embodiment of the application in turn Schematic diagram of the structure.
  • a method for preparing a color filter substrate according to an embodiment of the present application which includes the following steps:
  • S1 Provide a substrate 11, which includes a first sub-pixel area 11a, a second sub-pixel area 11b, and a third sub-pixel area 11c;
  • a quantum dot layer 14 is formed on the substrate 11, the quantum dot layer 14 covers the substrate 11, the black matrix 12 and the first photoresist layer 13, and the quantum dot layer 14 includes at least two A quantum dot, the color of light emitted by the at least two quantum dots is different from the color of light emitted by the first photoresist layer 13 respectively;
  • a patterned second photoresist layer 15 and a third photoresist layer 16 are sequentially formed on the quantum dot layer 14.
  • the second photoresist layer 15 is arranged corresponding to the second sub-pixel area 11b, and the The third photoresist layer 16 is disposed corresponding to the third sub-pixel area 11c;
  • the second photoresist layer 15 and the third photoresist layer 16 are used as shielding layers, and the quantum dot layer 14 is quenched, instead of using a photomask to form patterned quantum dots.
  • the point layer process saves the mask and reduces the cost.
  • the preparation method of the color filter substrate of this embodiment is by forming a quantum dot layer 14 covering the substrate 11 and the first photoresist layer 13 on the substrate 11, and then forming the second photoresist layer 15 and the third photoresist layer on the quantum dot layer 14.
  • the resist layer 16 finally uses the second photoresist layer 15 and the third photoresist layer 16 as shielding layers to quench the quantum dot layer 14 so as to invalidate the exposed part of the quantum dot layer 14. That is to say, the part of the quantum dot layer 14 covering the first photoresist layer 13 loses the function of emitting fluorescence, and the part of the quantum dot layer 14 corresponding to the second photoresist layer 15 and the third photoresist layer 16 retains luminescent fluorescence.
  • step S1 a substrate 11 is provided.
  • the substrate 11 includes a first sub-pixel area 11a, a second sub-pixel area 11b, and a third sub-pixel area 11c.
  • the substrate 11 may be a rigid substrate, such as a glass substrate.
  • the substrate 11 may also be a flexible substrate, such as a polyimide substrate. Then go to step S2.
  • step S2 a black matrix 12 is formed on the substrate 11.
  • the black matrix 12 separates the first sub-pixel area 11a, the second sub-pixel area 11b, and the third sub-pixel area 11c from each other.
  • the material of the black matrix 12 may be a black metal material, or a black organic or inorganic material.
  • the black matrix 12 may be formed on the substrate 11 through a photolithography process or an inkjet printing process. Then go to step S3.
  • step S3 a patterned first photoresist layer 13 is formed on the first sub-pixel region 11a of the substrate 11.
  • the first photoresist layer 13 is a blue photoresist layer.
  • the first photoresist layer 13 is patterned using a photolithography process. Then go to step S4.
  • a quantum dot layer 14 is formed on the substrate 11.
  • the quantum dot layer 14 covers the substrate 11, the black matrix 12 and the first photoresist layer 13.
  • the quantum dot layer 14 includes at least two types of quantum dots. The light-emitting colors of at least two quantum dots are different from the light-emitting colors of the first photoresist layer 13 respectively.
  • Step S4 includes the following steps:
  • Step S41 providing a quantum dot solution in which the at least two quantum dots and a solvent are mixed;
  • Step S42 coating or inkjet printing a layer of the quantum dot solution on the substrate;
  • Step S43 drying the quantum dot solution
  • Step S44 Repeat the above steps to obtain a quantum dot layer with a set thickness.
  • the solvent in the quantum dot solution is a low boiling point solvent, and the solvent can be one of petroleum ether, dichloromethane, or ethyl acetate.
  • quantum dots there are two types of quantum dots, namely red quantum dots and green quantum dots. In some embodiments, there may also be more than two types of quantum dots, such as white quantum dots, red quantum dots, and green quantum dots. In short, as long as the light color of the quantum dots is different from the light color of the first photoresist layer 13.
  • the quantum dot solution is obtained by dispersing oil-soluble red quantum dots and green quantum dots in a solvent with a low boiling point after processing. Then go to step S42.
  • step S42 a layer of quantum dot solution is formed on the substrate 11 by coating or inkjet printing. Then go to step S43.
  • step S43 the quantum dot solution is dried by heating. That is, the solvent in the quantum dot solution is volatilized by heating. Since the solvent is a low boiling point substance, the temperature required for heating is relatively low, so that the characteristics of the quantum dots and the first photoresist layer 13 are not damaged. Then go to step S44.
  • steps S41-S43 are repeated to obtain a quantum dot layer with a set thickness.
  • steps S41-S43 are repeated several times to sequentially increase the thickness of the quantum dot layer 14 until it meets the set thickness.
  • the thickness of the quantum dot layer 14 is between 0.5 ⁇ m and 5 ⁇ m.
  • the refractive index of the quantum dot layer 14 is smaller than the refractive index of the substrate 11, so that when light enters the interface between the substrate 11 and the quantum dot layer 14, as long as the incident angle of the light is greater than the critical angle, the light will occur at the interface. Total internal reflection, and when reflected, the energy of the light (evanescent wave) will enter the quantum dot layer 14 to a certain depth, thereby exciting the quantum dot to emit fluorescence, and improving the luminous efficiency of the quantum dot.
  • step S5 a patterned second photoresist layer 15 and a third photoresist layer 16 are sequentially formed on the quantum dot layer 14.
  • the second photoresist layer 15 is disposed corresponding to the second sub-pixel area 11b
  • the third photoresist layer 16 is disposed corresponding to the third sub-pixel area 11c.
  • the orthographic projection of the second photoresist layer 15 on the plane where the substrate 11 is located is on the second sub-pixel area 11b.
  • the orthographic projection of the third photoresist layer 16 on the plane of the substrate 11 is on the third sub-pixel area 11C.
  • the second photoresist layer 15 is a red photoresist layer
  • the third photoresist layer 16 is a green photoresist layer.
  • a photolithography process is used to form the patterned second photoresist layer 15 and the third photoresist layer 16. Then go to step S6.
  • step S6 the second photoresist layer 15 and the third photoresist layer 16 are used as shielding layers to quench the quantum dot layer 14 so that the quantum dots that are not covered by the quantum dot layer 14 are invalid .
  • the quantum dot layer 14 is quenched with a quencher, so that the shielded part of the quantum dot layer 14 forms the first quantum dot layer 141, and the unshielded part of the quantum dot layer 14 undergoes quantum dot quenching. Extinguished to form a second quantum dot layer 142.
  • the quencher is an organic reagent with electron-withdrawing ability, for example, it can be one of 12-alkyl mercaptan, 14-alkyl mercaptan or pyridine solution.
  • the unshielded part of the quantum dot layer 14 When the unshielded part of the quantum dot layer 14 is quenched by fluorescence, it loses the ability to be excited to emit fluorescence, and has light-transmitting properties.
  • the first photoresist layer, the second photoresist layer, and the third photoresist layer may also be photoresists of different colors from this embodiment.
  • the first photoresist layer, the second photoresist layer, and the third photoresist layer are red, green, and blue resist layers in sequence.
  • the quantum dots contained in the quantum dot layer only need to have two quantum dots with different colors from the first photoresist layer, such as green and blue quantum dots.
  • the embodiment of the present application also relates to a color filter substrate 200, which includes a substrate 21, a black matrix 22, a first photoresist layer 23, a quantum dot layer 24, a second photoresist layer 25, and a third photoresist Layer 26.
  • the substrate 21 includes a first sub-pixel area 21a, a second sub-pixel area 21b, and a third sub-pixel area 21c.
  • the black matrix 22 is disposed on the substrate 21 and separates the first sub-pixel area 21a, the second sub-pixel area 21b, and the third sub-pixel area 21c from each other.
  • the first photoresist layer 23 is disposed on the first sub-pixel area 21 a on the substrate 21.
  • the quantum dot layer 24 is disposed on the substrate 21 and covers the substrate 21 and the first photoresist layer 23.
  • the second photoresist layer 25 is disposed on the portion of the quantum dot layer 24 corresponding to the second sub-pixel region 21b.
  • the third photoresist layer 26 is disposed on the portion of the quantum dot layer 24 corresponding to the third sub-pixel region 21c.
  • the quantum dot layer 24 includes at least two types of quantum dots.
  • the light-emitting colors of at least two quantum dots are different from the light-emitting colors of the first photoresist layer 23 respectively.
  • the quantum dot layer 24 includes a first quantum dot layer 241 and a second quantum dot layer 242 outside the first quantum dot layer 241 disposed on the second sub-pixel area 21b and the third sub-pixel area 21c.
  • the quantum dots in the first quantum dot layer 241 are excited to emit fluorescence of a corresponding color, and the quantum dots in the second quantum dot layer 242 are quenched into a light-transmitting state.
  • the color filter substrate 200 of this embodiment adopts the method of partial quenching of the quantum dot layer instead of the method of patterning the quantum dot layer with a photomask, which saves the cost of the photomask.
  • the first photoresist layer 23 is a blue photoresist layer
  • the second photoresist layer 25 is a red photoresist layer
  • the third photoresist layer 26 is a green photoresist layer.
  • the quantum dot layer 24 includes red quantum dots and green quantum dots.
  • the first photoresist layer, the second photoresist layer, and the third photoresist layer may also be photoresists of different colors from the present embodiment.
  • the first photoresist layer, the second photoresist layer, and the third photoresist layer are red, green, and blue resist layers in sequence.
  • the quantum dots contained in the quantum dot layer only need to have two quantum dots with different colors from the first photoresist layer, such as green and blue quantum dots.
  • the refractive index of the substrate 21 is greater than the refractive index of the quantum dot layer 24.
  • the light irradiating the light source of the color filter substrate 200 of this embodiment is blue light. Therefore, blue light is a short wave, which can better excite the quantum dots, so that it has a high color gamut when applied to a display panel.
  • the color filter substrate 200 of this embodiment can be applied to a liquid crystal display panel, an OLED display panel, an LED display panel, or a backlight module.
  • the color film substrate 200 of this embodiment is used as a part of the backlight module, it is sufficient that the light emitted by the first photoresist layer, the second photoresist layer and the third photoresist layer are mixed to become white light.
  • the type of quantum dots is also complementary to the color of the first photoresist layer to form three primary colors (red, green and blue).
  • the preparation method of the color filter substrate of the present application is to form a quantum dot layer covering the substrate and the first photoresist layer on the substrate, then form the second photoresist layer and the third photoresist layer on the quantum dot layer, and finally use the second
  • the photoresist layer and the third photoresist layer are shielding layers, and the quantum dot layer is quenched to invalidate the exposed part of the quantum dot layer. That is, the part of the quantum dot layer covering the first photoresist layer loses the function of emitting fluorescence, and the part of the quantum dot layer corresponding to the second photoresist layer and the third photoresist layer retains the function of emitting fluorescence.
  • the second photoresist layer and the third photoresist layer are used as shielding layers, and the quantum dot layer is quenched, which saves the process of using a photomask to form a patterned quantum dot layer , Thereby saving the photomask, thereby reducing the cost.

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Abstract

一种彩膜基板（200）的制备方法及彩膜基板（200），制备方法包括：提供一基板（11，21）；在第一子像素区（11a，21a）上形成第一光阻层（13，23）；在基板（11，21）上形成量子点层（14，24），至少两种量子点的出光颜色分别与第一光阻层（13，23）的出光颜色不同；在量子点层（14，24）上依次形成第二光阻层（15，25）和第三光阻层（16，26）；对量子点层（14，24）进行猝灭处理，使量子点层（14，24）未被遮掩的量子点无效。

Description

彩膜基板的制备方法及彩膜基板 技术领域
本申请涉及一种显示技术领域，特别涉及一种彩膜基板的制备方法及彩膜基板。
 背景技术
在现有的量子点彩膜基板中，需要额外增加光罩去图案化量子点层，提高了制备成本。
 技术问题
本申请实施例提供一种彩膜基板的制备方法及彩膜基板，以解决现有的量子点彩膜基板在制备的过程需要采用额外的光罩区图案化量子点层，造成制备成本较高的技术问题。
 技术解决方案
本申请实施例提供一种彩膜基板的制备方法，其包括以下步骤：
提供一基板，所述基板包括第一子像素区、第二子像素区和第三子像素区；
在所述基板的第一子像素区上形成图案化的第一光阻层，所述第一光阻层为蓝色光阻层；
在所述基板上形成量子点层，所述量子点层覆盖所述基板和所述第一光阻层，所述量子点层包括红色量子点和绿色量子点；
在所述量子点层上依次形成图案化的第二光阻层和第三光阻层，所述第二光阻层对应所述第二子像素区设置，所述第三光阻层对应所述第三子像素区设置，所述第二光阻层为红色光阻层，所述第三光阻层为绿色光阻层；
以所述第二光阻层和所述第三光阻层为遮挡层，对所述量子点层进行猝灭处理，使所述量子点层未被遮掩的量子点无效；
所述在所述基板上形成量子点层，包括以下步骤：
提供混合了所述至少两种量子点和溶剂的量子点溶液；
在所述基板上涂布或喷墨打印一层所述量子点溶液；
烘干所述量子点溶液；
重复以上步骤，获得设定厚度的量子点层。
在本申请实施例的彩膜基板的制备方法中，所述溶剂为石油醚、二氯甲烷或乙酸乙酯中的一种。
在本申请实施例的彩膜基板的制备方法中，所述对所述量子点层进行猝灭处理中；
采用猝灭剂对所述量子点层进行猝灭处理，以使所述量子点层中被遮挡的部分形成第一量子点层，所述量子点层中未被遮挡的部分发生量子点猝灭形成第二量子点层。
在本申请实施例的彩膜基板的制备方法中，所述猝灭剂为12-烷基硫醇、14-烷基硫醇或吡啶溶液中的一种。
在本申请实施例的彩膜基板的制备方法中，在所述提供一基板之后，及在所述基板的第一子像素区上形成图案化的第一光阻层之前，还包括步骤：
在所述基板上形成黑色矩阵。
本申请实施例还提供一种彩膜基板的制备方法，其包括以下步骤：
提供一基板，所述基板包括第一子像素区、第二子像素区和第三子像素区；
在所述基板的第一子像素区上形成图案化的第一光阻层；
在所述基板上形成量子点层，所述量子点层覆盖所述基板和所述第一光阻层，所述量子点层包括至少两种量子点，所述至少两种量子点的出光颜色分别与所述第一光阻层的出光颜色不同；
在所述量子点层上依次形成图案化的第二光阻层和第三光阻层，所述第二光阻层对应所述第二子像素区设置，所述第三光阻层对应所述第三子像素区设置；
以所述第二光阻层和所述第三光阻层为遮挡层，对所述量子点层进行猝灭处理，使所述量子点层未被遮掩的量子点无效。
在本申请实施例的彩膜基板的制备方法中，所述在所述基板上形成量子点层，包括以下步骤：
提供混合了所述至少两种量子点和溶剂的量子点溶液；
在所述基板上涂布或喷墨打印一层所述量子点溶液；
烘干所述量子点溶液；
重复以上步骤，获得设定厚度的量子点层。
在本申请实施例的彩膜基板的制备方法中，所述溶剂为石油醚、二氯甲烷或乙酸乙酯中的一种。
在本申请实施例的彩膜基板的制备方法中，所述对所述量子点层进行猝灭处理中；
采用猝灭剂对所述量子点层进行猝灭处理，以使所述量子点层中被遮挡的部分形成第一量子点层，所述量子点层中未被遮挡的部分发生量子点猝灭形成第二量子点层。
在本申请实施例的彩膜基板的制备方法中，所述猝灭剂为12-烷基硫醇、14-烷基硫醇或吡啶溶液中的一种。
在本申请实施例的彩膜基板的制备方法中，所述第一光阻层为蓝色光阻层，所述第二光阻层为红色光阻层，所述第三光阻层为绿色光阻层；所述量子点层包括红色量子点和绿色量子点。
在本申请实施例的彩膜基板的制备方法中，在所述提供一基板之后，及在所述基板的第一子像素区上形成图案化的第一光阻层之前，还包括步骤：
在所述基板上形成黑色矩阵。
本申请实施例还涉及一种彩膜基板，其包括：
基板，所述基板包括第一子像素区、第二子像素区和第三子像素区；
第一光阻层，所述第一光阻层设置在所述基板上的第一子像素区；
量子点层，所述量子点层设置在所述基板上并覆盖所述基板和所述第一光阻层，所述量子点层包括至少两种量子点，所述至少两种量子点的出光颜色分别与所述第一光阻层的出光颜色不同；
第二光阻层，所述第二光阻层设置在所述量子点层对应于所述第二子像素区的部分之上；以及
第三光阻层，所述第三光阻层设置在所述量子点层对应于所述第三子像素区的部分之上；
所述量子点层包括设置在所述第二子像素区和所述第三子像素区上的第一量子点层和所述第一量子点层之外的第二量子点层；在光照下，所述第一量子点层内的量子点受激发出相应颜色的荧光，所述第二量子点层内的量子点被猝灭而呈透光状态。
在本申请实施例的彩膜基板中，所述第一光阻层为蓝色光阻层，所述第二光阻层为红色光阻层，所述第三光阻层为绿色光阻层；所述量子点层包括红色量子点和绿色量子点。
在本申请实施例的彩膜基板中，所述彩膜基板还包括黑色矩阵，所述黑色矩阵设置在所述基板和所述量子点层之间。
在本申请实施例的彩膜基板中，所述基板的折射率大于所述量子点层的折射率。
 有益效果
本申请的彩膜基板的制备方法通过在基板上形成覆盖基板和第一光阻层的量子点层，随后在量子点层上形成第二光阻层和第三光阻层，最后以第二光阻层和第三光阻层为遮挡层，对量子点层进行猝灭处理，以使量子点层裸露的部分失效。也就是说，量子点层覆盖在第一光阻层上的部分失去发出荧光的功能，量子点层对应于第二光阻层和第三光阻层的部分保留发光荧光的功能。
本申请的彩膜基板的制备方法，以第二光阻层和第三光阻层为遮挡层，对量子点层进行猝灭的设置，节省了采用光罩形成图案化的量子点层的工序，从而节省了该光罩，进而降低了成本。
 附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。
图1为本申请实施例的彩膜基板的制备方法的流程图；
图1A-1F依次为本申请实施例的彩膜基板的制备方法的步骤S1-S6的结构示意图；
图2为本申请实施例的彩膜基板的制备方法的步骤S4的流程图；
图3为本申请实施例的彩膜基板的结构示意图。
 本发明的实施方式
请参照附图中的图式，其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本申请具体实施例，其不应被视为限制本申请未在此详述的其它具体实施例。
请参照图1和图1A-1F，图1为本申请实施例的彩膜基板的制备方法的流程图；图1A-1F依次为本申请实施例的彩膜基板的制备方法的步骤S1-S6的结构示意图。
一种本申请实施例的彩膜基板的制备方法，其包括以下步骤：
S1：提供一基板11，所述基板11包括第一子像素区11a、第二子像素区11b和第三子像素区11c；
S2：在所述基板11上形成黑色矩阵12，所述黑色矩阵12将所述第一子像素区11a、第二子像素区11b和第三子像素区11c彼此隔开；
S3：在所述基板11的第一子像素区11a上形成图案化的第一光阻层13；
S4：在所述基板11上形成量子点层14，所述量子点层14覆盖所述基板11、所述黑色矩阵12和所述第一光阻层13，所述量子点层14包括至少两种量子点，所述至少两种量子点的出光颜色分别与所述第一光阻层13的出光颜色不同；
S5：在所述量子点层14上依次形成图案化的第二光阻层15和第三光阻层16，所述第二光阻层15对应所述第二子像素区11b设置，所述第三光阻层16对应所述第三子像素区11c设置；
S6：以所述第二光阻层15和所述第三光阻层16为遮挡层，对所述量子点层14进行猝灭处理，使所述量子点层14未被遮掩的量子点无效。
本实施例的彩膜基板的制备方法，以第二光阻层15和第三光阻层16为遮挡层，对量子点层14进行猝灭的设置，替换了采用光罩形成图案化的量子点层的工序，从而节省了该光罩，进而降低了成本。
本实施例的彩膜基板的制备方法通过在基板11上形成覆盖基板11和第一光阻层13的量子点层14，随后在量子点层14上形成第二光阻层15和第三光阻层16，最后以第二光阻层15和第三光阻层16为遮挡层，对量子点层14进行猝灭处理，以使量子点层14裸露的部分失效。也就是说，量子点层14覆盖在第一光阻层13上的部分失去发出荧光的功能，量子点层14对应于第二光阻层15和第三光阻层16的部分保留发光荧光的功能。
下文是对本申请实施例的彩膜基板的制备方法的详细阐述。
请参照图1A，在步骤S1中：提供一基板11。基板11包括第一子像素区11a、第二子像素区11b和第三子像素区11c。
基板11可以是硬性基板，比如玻璃基板。基板11也可以是柔性基板，比如聚酰亚胺基板。随后转入步骤S2。
请参照图1B，在步骤S2中：在基板11上形成黑色矩阵12。黑色矩阵12将第一子像素区11a、第二子像素区11b和第三子像素区11c彼此隔开。
黑色矩阵12的材料可以是黑色的金属材料，也可以是黑色有机或无机材料。黑色矩阵12可以通过光刻工艺或喷墨打印的工艺形成在基板11上。随后转入步骤S3。
请参照图1C，在步骤S3中：在基板11的第一子像素区11a上形成图案化的第一光阻层13。
在本实施例中，第一光阻层13为蓝色光阻层。第一光阻层13采用光刻工艺进行图案化处理。随后转入步骤S4。
请参照图1D，在步骤S4中：在基板11上形成量子点层14。量子点层14覆盖基板11、黑色矩阵12和第一光阻层13。量子点层14包括至少两种量子点。至少两种量子点的出光颜色分别与第一光阻层13的出光颜色不同。
具体的，请参照图2，步骤S4包括以下步骤：
步骤S41：提供混合了所述至少两种量子点和溶剂的量子点溶液；
步骤S42：在所述基板上涂布或喷墨打印一层所述量子点溶液；
步骤S43：烘干所述量子点溶液；
步骤S44：重复以上步骤，获得设定厚度的量子点层。
在步骤S41中，量子点溶液中的溶剂为低沸点溶剂，溶剂可以为石油醚、二氯甲烷或乙酸乙酯中的一种。
在本实施例中，量子点的种类有两种，分别是红色量子点和绿色量子点。在一些实施例中，量子点的种类也可以是大于两种，比如白色量子点、红色量子点和绿色量子点。总之，只要量子点的出光颜色与第一光阻层13的出光颜色不同即可。
因此，在本实施例中，量子点溶液为经处理后具有油溶性的红色量子点及绿色量子点分散于低沸点的溶剂得到。随后转入步骤S42。
在步骤S42中，采用涂布或喷墨打印的方式在基板11上形成一层量子点溶液。随后转入步骤S43。
在步骤S43中，采用加热的方式烘干量子点溶液。即采用加热的方式将量子点溶液中的溶剂挥发掉。由于溶剂为低沸点物质，因此加热所需的温度较低，从而不会破坏量子点和第一光阻层13的特性。随后转入步骤S44。
在步骤S44中，重复步骤S41-S43，获得设定厚度的量子点层。多次重复步骤S41-S43，以依次增加量子点层14的厚度，直至符合设定厚度为止。在本实施例中，量子点层14的厚度介于0.5微米-5微米之间。
另外，量子点层14的折射率小于基板11的折射率，这样的设置，使得光线进入基板11和量子点层14的界面时，只要光线的入射角度大于临界角度，光线便会在该界面发生全内反射，而在反射时，光线的能量（倏逝波）会进入到量子点层14一定的深度，从而激发量子点发出荧光，提高了量子点的发光效益。
随后转入步骤S5。
请参照图1E，在步骤S5中：在量子点层14上依次形成图案化的第二光阻层15和第三光阻层16。第二光阻层15对应第二子像素区11b设置，第三光阻层16对应第三子像素区11c设置。
具体的，第二光阻层15于基板11所在平面的正投影在第二子像素区11b上。第三光阻层16于基板11所在平面的正投影在第三子像素区11C上。
在本实施例中，第二光阻层15为红色光阻层，第三光阻层16为绿色光阻层。采用光刻工艺形成图案化的第二光阻层15和第三光阻层16。随后转入步骤S6。
请参照图1F，在步骤S6中：以第二光阻层15和第三光阻层16为遮挡层，对量子点层14进行猝灭处理，使量子点层14未被遮掩的量子点无效。
具体的，采用猝灭剂对量子点层14进行猝灭处理，以使量子点层14中被遮挡的部分形成第一量子点层141，量子点层14中未被遮挡的部分发生量子点猝灭形成第二量子点层142。猝灭剂为具有吸电子能力的有机试剂，比如可以为12-烷基硫醇、14-烷基硫醇或吡啶溶液中的一种。
需要说明的是，由于量子点的表面效应的特性，根据该特性，表面性质的变化对于量子点材料的材料特征影响巨大，这其中最主要的就是光学性质的影响，不同类型的表面配体对量子点的影响也不尽相同，比如长烷基链的脂肪胺与脂肪酸等，作用于量子点表面能有效钝化表面电子陷阱，而如吡啶或硫醇等配体，由于自身电负性过大、吸电子能力强，一旦作用于量子点表面会诱发新的表面电子缺陷的产生，对于激发态的电子有较强的吸引能力，在一定程度上会造成光生电子与空穴的复合障碍，从而引发荧光猝灭。
而当量子点层14未被遮挡的部分被荧光猝灭后，其失去了被激发发出荧光的能力，而具备有透光性能。
这样便完成了本申请实施例的彩膜基板的制备方法的过程。
在本申请的一些实施例中，第一光阻层、第二光阻层、第三光阻层也可以是与本实施例不同颜色的光阻。比如第一光阻层、第二光阻层和第三光阻层依次为红、绿和蓝光阻层。而量子点层包含的量子点的种类，只要具有两种不同于第一光阻层颜色的量子点即可，比如绿色和蓝色量子点。
请参照图3，本申请实施例还涉及一种彩膜基板200，其包括基板21、黑色矩阵22、第一光阻层23、量子点层24、第二光阻层25和第三光阻层26。基板21包括第一子像素区21a、第二子像素区21b和第三子像素区21c。
黑色矩阵22设置在基板21上，且将第一子像素区21a、第二子像素区21b和第三子像素区21c彼此隔开。第一光阻层23设置在基板21上的第一子像素区21a。量子点层24设置在基板21上并覆盖基板21和第一光阻层23。第二光阻层25设置在量子点层24对应于第二子像素区21b的部分之上。第三光阻层26设置在量子点层24对应于第三子像素区21c的部分之上。
其中，量子点层24包括至少两种量子点。至少两种量子点的出光颜色分别与第一光阻层23的出光颜色不同。
量子点层24包括设置在第二子像素区21b和第三子像素区21c上的第一量子点层241和第一量子点层241之外的第二量子点层242。
在光照下，第一量子点层241内的量子点受激发出相应颜色的荧光，第二量子点层242内的量子点被猝灭而呈透光状态。
本实施例的彩膜基板200采用量子点层部分猝灭的方式替换了采用光罩图案化量子点层的方式，节省了光罩的成本。
在本实施例的彩膜基板200中，第一光阻层23为蓝色光阻层，第二光阻层25为红色光阻层，第三光阻层26为绿色光阻层。量子点层24包括红色量子点和绿色量子点。
在一些实施例中，第一光阻层、第二光阻层、第三光阻层也可以是与本实施例不同颜色的光阻。比如第一光阻层、第二光阻层和第三光阻层依次为红、绿和蓝光阻层。而量子点层包含的量子点的种类，只要具有两种不同于第一光阻层颜色的量子点即可，比如绿色和蓝色量子点。
在本实施例的彩膜基板200中，基板21的折射率大于量子点层24的折射率。这样的设置，使得光线进入基板11和量子点层14的界面时，只要光线的入射角度大于临界角度，光线便会在该界面发生全内反射，而在反射时，光线的能量（倏逝波）会进入到量子点层14一定的深度，从而激发量子点发出荧光，提高了量子点的发光效益。
在本实施例中，照射本实施例的彩膜基板200的光源的光为蓝光。因此蓝光为短波，能更好的激发量子点，使得其应用于显示面板时具有高色域。
另外，本实施例的彩膜基板200可以应用于液晶显示面板、OLED显示面板、LED显示面板或背光模组。
当本实施例的彩膜基板200作为背光模组的一部分时，只要第一光阻层、第二光阻层和第三光阻层的出光颜色混合后为白光即可，其中量子点层内的量子点的种类也相应的与第一光阻层的颜色互补，以形成三基色（红绿蓝）。
本实施例的彩膜基板的制备方法具体请参照上述实施例的彩膜基板的制备方案的内容，此处不再赘述。
本申请的彩膜基板的制备方法通过在基板上形成覆盖基板和第一光阻层的量子点层，随后在量子点层上形成第二光阻层和第三光阻层，最后以第二光阻层和第三光阻层为遮挡层，对量子点层进行猝灭处理，以使量子点层裸露的部分失效。也就是说，量子点层覆盖在第一光阻层上的部分失去发出荧光的功能，量子点层对应于第二光阻层和第三光阻层的部分保留发光荧光的功能。
本申请的彩膜基板的制备方法，以第二光阻层和第三光阻层为遮挡层，对量子点层进行猝灭的设置，节省了采用光罩形成图案化的量子点层的工序，从而节省了该光罩，进而降低了成本。
以上所述，对于本领域的普通技术人员来说，可以根据本申请的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本申请后附的权利要求的保护范围。

Claims (16)

  1. 一种彩膜基板的制备方法，其包括以下步骤：
    提供一基板，所述基板包括第一子像素区、第二子像素区和第三子像素区；
    在所述基板的第一子像素区上形成图案化的第一光阻层，所述第一光阻层为蓝色光阻层；
    在所述基板上形成量子点层，所述量子点层覆盖所述基板和所述第一光阻层，所述量子点层包括红色量子点和绿色量子点；
    在所述量子点层上依次形成图案化的第二光阻层和第三光阻层，所述第二光阻层对应所述第二子像素区设置，所述第三光阻层对应所述第三子像素区设置，所述第二光阻层为红色光阻层，所述第三光阻层为绿色光阻层；
    以所述第二光阻层和所述第三光阻层为遮挡层，对所述量子点层进行猝灭处理，使所述量子点层未被遮掩的量子点无效；
    所述在所述基板上形成量子点层，包括以下步骤：
    提供混合了所述至少两种量子点和溶剂的量子点溶液；
    在所述基板上涂布或喷墨打印一层所述量子点溶液；
    烘干所述量子点溶液；
    重复以上步骤，获得设定厚度的量子点层。
  2. 根据权利要求1所述的彩膜基板的制备方法，其中，所述溶剂为石油醚、二氯甲烷或乙酸乙酯中的一种。
  3. 根据权利要求1所述的彩膜基板的制备方法，其中，所述对所述量子点层进行猝灭处理中；
    采用猝灭剂对所述量子点层进行猝灭处理，以使所述量子点层中被遮挡的部分形成第一量子点层，所述量子点层中未被遮挡的部分发生量子点猝灭形成第二量子点层。
  4. 根据权利要求3所述的彩膜基板的制备方法，其中，所述猝灭剂为12-烷基硫醇、14-烷基硫醇或吡啶溶液中的一种。
  5. 根据权利要求1所述的彩膜基板的制备方法，其中，在所述提供一基板之后，及在所述基板的第一子像素区上形成图案化的第一光阻层之前，还包括步骤：
    在所述基板上形成黑色矩阵。
  6. 一种彩膜基板的制备方法，其包括以下步骤：
    提供一基板，所述基板包括第一子像素区、第二子像素区和第三子像素区；
    在所述基板的第一子像素区上形成图案化的第一光阻层；
    在所述基板上形成量子点层，所述量子点层覆盖所述基板和所述第一光阻层，所述量子点层包括至少两种量子点，所述至少两种量子点的出光颜色分别与所述第一光阻层的出光颜色不同；
    在所述量子点层上依次形成图案化的第二光阻层和第三光阻层，所述第二光阻层对应所述第二子像素区设置，所述第三光阻层对应所述第三子像素区设置；
    以所述第二光阻层和所述第三光阻层为遮挡层，对所述量子点层进行猝灭处理，使所述量子点层未被遮掩的量子点无效。
  7. 根据权利要求6所述的彩膜基板的制备方法，其中，所述在所述基板上形成量子点层，包括以下步骤：
    提供混合了所述至少两种量子点和溶剂的量子点溶液；
    在所述基板上涂布或喷墨打印一层所述量子点溶液；
    烘干所述量子点溶液；
    重复以上步骤，获得设定厚度的量子点层。
  8. 根据权利要求7所述的彩膜基板的制备方法，其中，所述溶剂为石油醚、二氯甲烷或乙酸乙酯中的一种。
  9. 根据权利要求7所述的彩膜基板的制备方法，其中，所述对所述量子点层进行猝灭处理中；
    采用猝灭剂对所述量子点层进行猝灭处理，以使所述量子点层中被遮挡的部分形成第一量子点层，所述量子点层中未被遮挡的部分发生量子点猝灭形成第二量子点层。
  10. 根据权利要求9所述的彩膜基板的制备方法，其中，所述猝灭剂为12-烷基硫醇、14-烷基硫醇或吡啶溶液中的一种。
  11. 根据权利要求6所述的彩膜基板的制备方法，其中，所述第一光阻层为蓝色光阻层，所述第二光阻层为红色光阻层，所述第三光阻层为绿色光阻层；所述量子点层包括红色量子点和绿色量子点。
  12. 根据权利要求6所述的彩膜基板的制备方法，其中，在所述提供一基板之后，及在所述基板的第一子像素区上形成图案化的第一光阻层之前，还包括步骤：
    在所述基板上形成黑色矩阵。
  13. 一种彩膜基板，其中，包括：
    基板，所述基板包括第一子像素区、第二子像素区和第三子像素区；
    第一光阻层，所述第一光阻层设置在所述基板上的第一子像素区；
    量子点层，所述量子点层设置在所述基板上并覆盖所述基板和所述第一光阻层，所述量子点层包括至少两种量子点，所述至少两种量子点的出光颜色分别与所述第一光阻层的出光颜色不同；
    第二光阻层，所述第二光阻层设置在所述量子点层对应于所述第二子像素区的部分之上；以及
    第三光阻层，所述第三光阻层设置在所述量子点层对应于所述第三子像素区的部分之上；
    所述量子点层包括设置在所述第二子像素区和所述第三子像素区上的第一量子点层和所述第一量子点层之外的第二量子点层；在光照下，所述第一量子点层内的量子点受激发出相应颜色的荧光，所述第二量子点层内的量子点被猝灭而呈透光状态。
  14. 根据权利要求13所述的彩膜基板，其中，所述第一光阻层为蓝色光阻层，所述第二光阻层为红色光阻层，所述第三光阻层为绿色光阻层；所述量子点层包括红色量子点和绿色量子点。
  15. 根据权利要求13所述的彩膜基板，其中，所述彩膜基板还包括黑色矩阵，所述黑色矩阵设置在所述基板和所述量子点层之间。
  16. 根据权利要求13所述的彩膜基板，其中，所述基板的折射率大于所述量子点层的折射率。
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