WO2021098888A2 - 一种基于氮化铝基板的高频负载片及其制作方法 - Google Patents

一种基于氮化铝基板的高频负载片及其制作方法 Download PDF

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Publication number
WO2021098888A2
WO2021098888A2 PCT/CN2020/142576 CN2020142576W WO2021098888A2 WO 2021098888 A2 WO2021098888 A2 WO 2021098888A2 CN 2020142576 W CN2020142576 W CN 2020142576W WO 2021098888 A2 WO2021098888 A2 WO 2021098888A2
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WIPO (PCT)
Prior art keywords
surface electrode
electrode
aluminum nitride
nitride substrate
frequency load
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PCT/CN2020/142576
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English (en)
French (fr)
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WO2021098888A3 (zh
Inventor
洪哲
唐浩
陆达富
薛文惠
王文杰
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深圳顺络电子股份有限公司
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Application filed by 深圳顺络电子股份有限公司 filed Critical 深圳顺络电子股份有限公司
Priority to PCT/CN2020/142576 priority Critical patent/WO2021098888A2/zh
Priority to CN202080003883.5A priority patent/CN112789764B/zh
Publication of WO2021098888A2 publication Critical patent/WO2021098888A2/zh
Publication of WO2021098888A3 publication Critical patent/WO2021098888A3/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/22—Attenuating devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material

Definitions

  • the invention relates to electronic components, in particular to a high-frequency load sheet based on an aluminum nitride substrate and a manufacturing method thereof.
  • the general operating frequency band of aluminum nitride substrates and thick film process load plates used in base stations is below 6 GHz, with a maximum extension of 8.5 GHz. How to make the load piece meet the corresponding power and electrical performance requirements in the working frequency range of 10-18 GHz is an urgent problem to be solved.
  • the main purpose of the present invention is to overcome the above-mentioned problems in the background art and provide a high frequency load sheet based on an aluminum nitride substrate and a manufacturing method thereof.
  • a high-frequency load sheet based on an aluminum nitride substrate comprising an aluminum nitride substrate, a first surface electrode, a second surface electrode, a resistance layer, and a back electrode.
  • the first surface electrode and the second surface electrode are separated from each other
  • the ground is formed on the front surface of the aluminum nitride substrate, the first surface electrode is connected to the second surface electrode through the resistance layer, the back electrode is formed on the back surface of the aluminum nitride substrate, and the first surface electrode is formed on the back surface of the aluminum nitride substrate.
  • the two-sided electrode is connected to the back electrode through an electrode tip formed on the end surface of the aluminum nitride substrate.
  • the first surface electrode can be used as a lead pad
  • the second surface electrode can be used as a ground terminal.
  • it also includes a glass layer covering the resistance layer and a black protective film covering the glass layer, the first surface electrode and the second surface electrode respectively extending to the black protective film The outer sides of both ends are thus exposed.
  • the first surface electrode includes an integrally formed lead pad portion, a first longitudinal extension portion, a middle lateral turning portion, a second longitudinal extension portion, and a lateral extension portion, and the first longitudinal extension portion extends from the lead
  • the pad portion extends in the direction of the second surface electrode, one end of the middle lateral turning portion is perpendicularly connected to the first longitudinal extension, and the other end of the middle lateral turning portion is connected to the second longitudinal extension
  • the second longitudinal extension portion extends in the direction of the second surface electrode and is perpendicularly connected to the lateral extension portion.
  • the second surface electrode is a strip-shaped electrode extending laterally.
  • the width range of the lead pad portion is 0.6 ⁇ 0.05 mm, and the length range of the lead pad portion is 0.4 ⁇ 0.05 mm; the first longitudinal extension portion, the middle lateral turning portion, and the The width of the second longitudinal extension is in the range of 0.15 ⁇ 0.02mm, and the distance between the lead pad portion and the lateral extension is in the range of 0.8 ⁇ 0.1mm; preferably, the first longitudinal extension and the The lengths of the second longitudinal extensions are equal.
  • the length of the resistance layer between the first surface electrode and the second surface electrode is 1.00 ⁇ 0.05 mm, and the resistance layer is between the first surface electrode and the second surface electrode.
  • the width range between is 1.00 ⁇ 0.05mm.
  • both ends of the resistance layer have portions with a length of 0.05 mm covering the first surface electrode and the second surface electrode.
  • the black protective film includes the following components by weight: carbon black: 5-10 parts, diethylene glycol monoethyl ether: 10-20 parts, aluminum silicate: 10-20 parts, epoxy resin: 10 parts -20 parts, diluent: 1-10 parts, glass powder: 15-25 parts; preferably, the length of the black protective film is 1.25-1.6 mm, and the width is 1.20-1.27 mm.
  • a method for manufacturing the high-frequency load sheet based on the aluminum nitride substrate includes the following steps:
  • step S1 the back electrode is printed, and after the back electrode is printed, the back electrode is dried at a temperature of 150-200° C. for 15-20 minutes; preferably, the back electrode is screen printed using a thick film process;
  • step S2 after the first surface electrode and the second surface electrode are printed, they are dried at a temperature of 150-200°C for 15-20 minutes; preferably, a thick film process is used to screen print the first surface electrode and the second surface electrode.
  • the second surface electrode is used to screen print the first surface electrode and the second surface electrode.
  • step S3 the back electrode, the first surface electrode, and the second surface electrode are sintered at a temperature of 840° C.-880° C. for 30-40 minutes;
  • step S4 after printing the resistive layer, dry the resistive layer at a temperature of 150-200° C. for 15-20 minutes; preferably, the resistive layer is screen printed by a thick film process;
  • step S5 the resistance layer is sintered at a temperature of 840° C.-880° C. for 30-40 minutes;
  • step S6 drying the glass layer at a temperature of 150-200° C. for 15-20 min after printing the glass layer; preferably, screen printing the glass layer using a thick film process;
  • step S7 the glass layer is sintered at a temperature of 640°C to 680°C for 30-40 minutes;
  • step S8 after the black protective film is printed, it is dried at a temperature of 150-200° C. for 15-20 minutes; preferably, the black protective film is screen printed by a thick film process;
  • step S9 the black protective film is heated and cured at a temperature of 180° C.-200° C. for 120-150 min.
  • step S1 the method further includes subjecting the aluminum nitride substrate to ultrasonic cleaning with absolute ethanol for 10-30 minutes and then drying.
  • step S7 and step S8 it also includes performing laser trimming on the product after sintering the glass layer, and controlling the resistance value in the range of 50 ⁇ 3% ⁇ .
  • the high-frequency load sheet based on the aluminum nitride substrate provided by the present invention includes an aluminum nitride substrate, a first surface electrode, a second surface electrode, a resistance layer formed on the front surface of the aluminum nitride substrate, and a resistance layer formed on the nitride substrate.
  • the two-sided electrode is connected to the back electrode through the electrode tip formed on the end face of the aluminum nitride substrate.
  • the high-frequency load plate designed with this structure can meet the corresponding power and electrical properties under the state of 10-18GHz. It is required that its rated power reaches 20W, and its operating frequency has a lower standing wave ratio at 10-18GHz. Moreover, the high-frequency load plate of the present invention can also match the low-frequency 0-10GHz operating frequency.
  • a thick film process based on an aluminum nitride substrate can be used to manufacture the high-frequency load sheet of the present invention. Compared with the traditional manufacturing method of the high-frequency load sheet, the present invention is based on nitrogen. The manufacturing process of the high-frequency load sheet of the aluminum base plate is simpler.
  • the configured black protective film and the "S"-shaped electrode microstrip line can further significantly improve the electrical performance of the high-frequency load sheet.
  • the configuration of the black protective film greatly increases the dielectric constant (compared to the air layer medium) and reduces the loss (dielectric loss and conduction loss), resulting in a substantial improvement in the corresponding performance at high frequencies.
  • FIG. 1 is a schematic diagram of an exploded structure of a high-frequency load sheet according to an embodiment of the present invention.
  • FIG. 2 is a schematic top view of the structure of the high-frequency load sheet according to the embodiment of the present invention.
  • Fig. 3 is a voltage standing wave ratio performance diagram of the high-frequency load plate of the embodiment and the comparative example of the present invention.
  • connection can be used for fixing or for coupling or connecting.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first” and “second” may explicitly or implicitly include one or more of these features.
  • “plurality” means two or more, unless otherwise specifically defined.
  • a high-frequency load sheet based on an aluminum nitride substrate includes an aluminum nitride substrate 3, a first surface electrode 41, a second surface electrode 4, a resistance layer 5, and The back electrode 1, the first surface electrode 41 and the second surface electrode 4 are formed on the front surface of the aluminum nitride substrate 3 separately from each other, and the first surface electrode 41 passes through the resistance layer 5 and the The second surface electrode 4 is connected, the back electrode 1 is formed on the back surface of the aluminum nitride substrate 3, and the second surface electrode 4 is connected to the electrode tip 2 formed on the end surface of the aluminum nitride substrate 3. The back electrode 1 is connected.
  • the first surface electrode 41 can be used as a lead pad of a high frequency load sheet based on an aluminum nitride substrate
  • the second surface electrode 4 can be used as a ground terminal of a high frequency load sheet based on an aluminum nitride substrate.
  • the aluminum nitride substrate 3 is a rectangular block.
  • the high-frequency load sheet based on the aluminum nitride substrate further includes a glass layer 6 covering the resistance layer 5 and a glass layer 6 covering the glass layer 6
  • the black protective film 7, the first surface electrode 41 and the second surface electrode 4 respectively extend to the outside of both ends of the black protective film 7, so that the first surface electrode 41 and the second surface electrode 4 A part of each is exposed to the outside of the black protective film 7.
  • the first surface electrode 41 includes a lead pad portion 411, a first longitudinal extension portion 4121, a middle lateral turning portion 4120, and a second longitudinal extension portion that are connected as a whole. 4122 and a lateral extension portion 413, the first longitudinal extension portion 4121 extends from the lead pad portion 411 in the direction of the second surface electrode 4, and one end of the middle lateral turning portion 4120 is connected to the first The longitudinal extension portion 4121 is vertically connected, and the other end of the middle transverse turning portion 4120 is perpendicularly connected to the second longitudinal extension portion 4122, that is, the first longitudinal extension portion 4121 and the second longitudinal extension portion 4122 are perpendicular to each other The second longitudinal extension portion 4122 extends in the direction of the second surface electrode 4 and is vertically connected to the lateral extension portion 413.
  • the first surface electrode 41 of the above structure forms an "S"-shaped electrode microstrip line.
  • the "S" shape can be either the "S" shape shown in FIG. 2 or the "S" shape
  • the lead pad portion 411 is rectangular as a whole, and the lateral extension portion 413 and the lead pad portion 411 are parallel to each other.
  • the second surface electrode 4 is a strip-shaped electrode extending laterally.
  • the lateral extension 413 of the second surface electrode 4 and the first surface electrode 41 are parallel to each other
  • the width range of the lead pad portion 411 is 0.6 ⁇ 0.05 mm, and the length range of the lead pad portion 411 is 0.4 ⁇ 0.05 mm; the first longitudinal extension portion 4121.
  • the width range of the middle lateral turning portion 4120 and the second longitudinal extension portion 4122 is 0.15 ⁇ 0.02mm, and the distance between the lead pad portion 411 and the lateral extension portion 413 is 0.8 ⁇ 0.1 mm.
  • the lengths of the first longitudinal extension 4121 and the second longitudinal extension 4122 are equal.
  • the length of the resistance layer 5 between the first surface electrode 41 and the second surface electrode 4 is 1.00 ⁇ 0.05 mm, and the resistance layer 5 is in the range of 1.00 ⁇ 0.05 mm.
  • the width range between the first surface electrode 41 and the second surface electrode 4 is 1.00 ⁇ 0.05 mm.
  • both ends of the resistance layer 5 have parts covering the first surface electrode 41 and the second surface electrode 4 with a length of 0.05 mm.
  • the black protective film includes the following components by weight: carbon black: 5-10 parts, diethylene glycol monoethyl ether: 10-20 parts, aluminum silicate: 10-20 parts, Epoxy resin: 10-20 parts, diluent: 1-10 parts, glass powder: 15-25 parts; the length of the black protective film is 1.25-1.6 mm, and the width is 1.20-1.27 mm.
  • the configuration of the black protective film of this embodiment and the "S"-shaped electrode microstrip line can further significantly improve the electrical performance of the high-frequency load chip.
  • the configuration of the black protective film greatly increases the dielectric constant (compared to the air layer medium) and reduces the loss (dielectric loss and conduction loss), resulting in a substantial improvement in the corresponding performance at high frequencies.
  • a method for manufacturing the aluminum nitride substrate-based high-frequency load sheet of any of the foregoing embodiments includes the following steps:
  • Step S1 Print the back electrode 1 on the back of the aluminum nitride substrate 3;
  • Step S2 the first surface electrode 41 and the second surface electrode 4 are printed on the front surface of the aluminum nitride substrate 3;
  • Step S3 sintering the back electrode 1, the first surface electrode 41 and the second surface electrode 4;
  • Step S4 printing a resistive layer 5 on the front surface of the aluminum nitride substrate 3;
  • Step S5 sintering the resistance layer 5;
  • Step S6 printing a glass layer 6 on the resistance layer 5;
  • Step S7 sintering the glass layer 6
  • Step S8 printing a black protective film 7 on the glass layer 6;
  • Step S9 heat curing the black protective film 7
  • Step S10 forming an electrode tip 2 on the end surface of the aluminum nitride substrate 3 through a silver paste printing or sputtering process, so as to conduct the second surface electrode 4 and the back electrode 1.
  • step S1 the back electrode 1 is printed.
  • the back electrode 1 is dried at a temperature of 150-200° C. for 15-20 minutes; preferably, the back electrode 1 is screen printed by a thick film process;
  • step S2 after the first surface electrode 41 and the second surface electrode 4 are printed, they are dried at a temperature of 150-200°C for 15-20 minutes; preferably, the first surface is screen printed using a thick film process The electrode 41 and the second surface electrode 4;
  • step S3 the back electrode 1, the first surface electrode 41 and the second surface electrode 4 are sintered at a temperature of 840°C to 880°C for 30-40 minutes;
  • step S4 after printing the resistive layer 5, dry it at a temperature of 150-200°C for 15-20 minutes; preferably, the resistive layer 5 is screen printed by a thick film process;
  • step S5 the resistance layer 5 is sintered at a temperature of 840° C.-880° C. for 30-40 minutes;
  • step S6 after the glass layer 6 is printed, it is dried at a temperature of 150-200° C. for 15-20 minutes; preferably, the glass layer 6 is screen printed using a thick film process;
  • step S7 the glass layer 6 is sintered at a temperature of 640° C.-680° C. for 30-40 minutes;
  • step S8 after the black protective film 7 is printed, it is dried at a temperature of 150-200° C. for 15-20 minutes; preferably, the black protective film 7 is screen printed by a thick film process;
  • step S9 the black protective film 7 is heated and cured at a temperature of 180° C.-200° C. for 120-150 min.
  • the method before step S1, further includes: subjecting the aluminum nitride substrate 3 to ultrasonic cleaning with absolute ethanol for 10-30 minutes and then drying.
  • step S7 and step S8 the method further includes: laser trimming the product after sintering the glass layer 6 to control the resistance value in the range of 50 ⁇ 3% ⁇ .
  • the high-frequency load sheet based on the aluminum nitride substrate provided by the embodiment of the present invention includes an aluminum nitride substrate 3, a first surface electrode 41, a second surface electrode 4, and a resistance layer 5 formed on the front surface of the aluminum nitride substrate 3. And a back electrode 1 formed on the back surface of the aluminum nitride substrate 3, wherein the first surface electrode 41 and the second surface electrode 4 are separated from each other, and the first surface electrode 41 passes through the resistance layer 5 is connected to the second surface electrode 4, and the second surface electrode 4 is connected to the back electrode 1 through the electrode tip 2 formed on the end surface of the aluminum nitride substrate 3.
  • the frequency load chip can meet the corresponding power and electrical requirements under the state of 10-18GHz.
  • the high-frequency load plate of the embodiment of the present invention can also match the low-frequency 0-10 GHz operating frequency.
  • the manufacturing method of the high-frequency load sheet of the embodiment of the present invention the thick film process based on the aluminum nitride substrate can be used to manufacture the high-frequency load sheet of the embodiment of the present invention. Compared with the traditional method for manufacturing the high-frequency load sheet, The manufacturing process of the high-frequency load sheet based on the aluminum nitride substrate of the embodiment of the present invention is simpler.
  • a high-frequency load sheet based on an aluminum nitride substrate includes a high-frequency load sheet body, the high-frequency load sheet body includes an aluminum nitride substrate 3, and two front surfaces of the aluminum nitride substrate 3
  • the terminals are respectively provided with lead pads based on surface electrodes and ground terminals.
  • a resistor is connected between the lead pad and the ground terminal, and there are two protective layers on the outside of the aluminum nitride substrate 3.
  • the first protective layer is the glass layer 6, and the second protective layer is the black protective film 7.
  • the lead pad is used as a welding position, and the ground terminal is connected to the back electrode 1 on the opposite side of the resistive layer 5 and the resistive layer 5, which plays a conductive role, so that the front surface of the high-frequency load sheet is connected to A loop is formed on the back.
  • the resistance value of the resistance layer 5 can be adjusted by laser scribing the resistance layer 5.
  • the aluminum nitride substrate 3 is a rectangular block.
  • the size of the aluminum nitride-based substrate is 2.54mm*1.27mm*0.38mm.
  • the rated power of the high-frequency load sheet based on the aluminum nitride substrate is 20W.
  • the lead pad portion 411 of the first surface electrode 41 is used for welding leads, and the second surface electrode 4 serves as the surface electrode ground terminal.
  • the width of the lead pad portion 411 is 1: 0.6 ⁇ 0.05 mm, and the length 2 :0.4 ⁇ 0.05mm, and it is the resistance input terminal.
  • the first surface electrode 41 forms an S-shaped electrode including a lead pad portion 411, a first longitudinal extension portion 4121, a middle lateral turning portion 4120, a second longitudinal extension portion 4122, and a lateral extension portion 413, wherein the first longitudinal extension portion 4121
  • the line width of the middle transverse turning part 4120 and the second longitudinal extension part 4122 is 0.15 ⁇ 0.02 mm.
  • the S-shaped electrode can increase the inductance at high frequencies and play a role in matching microstrip lines at high frequencies.
  • the first surface electrode 41 forms an S-shaped electrode microstrip line.
  • the matching effect is the best. Effectively reduce the standing wave ratio.
  • the actual total longitudinal length of the first longitudinal extension 4121 and the second longitudinal extension 4122 that is, the distance between the lead pad portion 411 of the first surface electrode 41 and the lateral extension 413 3: 0.8 ⁇ 0.1mm .
  • a resistance layer 5 is overlapped between the second surface electrode 4 and the lateral extension 413 of the first surface electrode 41, and the length 4 of the resistance layer 5 is 1.00 ⁇ 0.05 mm, and the resistance layer 5 When the width 5 is 1.00 ⁇ 0.05mm, its electrical properties are the best and it can absorb the rated power of 20W.
  • the actual length of the resistance layer 5 is longer than both the left and right ends of 4 0.05 mm, that is, both ends of the resistance layer 5 have a portion with a length of 0.05 mm covering the lateral extension 413 of the first surface electrode 41 and the second surface electrode 4.
  • the black protective film includes the following components by weight: carbon black: 5-10 parts, diethylene glycol monoethyl ether: 10-20 parts, aluminum silicate: 10-20 parts, Epoxy resin: 10-20 parts, diluent: 1-10 parts, glass powder: 15-25 parts; the length of the black protective film is 1.25-1.6mm, and the width is 1.20-1.27mm.
  • the configuration of the black protective film of this embodiment and the "S"-shaped electrode microstrip line can further significantly improve the electrical performance of the high-frequency load chip.
  • the configuration of the black protective film greatly increases the dielectric constant (compared to the air layer medium) and reduces the loss (dielectric loss and conduction loss), resulting in a substantial improvement in the corresponding performance at high frequencies.
  • the second surface electrode 4 communicates with the back electrode 1 through the electrode tip 2 to form a passage.
  • the aluminum nitride substrate 3 is ultrasonically cleaned with absolute ethanol for 10-30 minutes and then dried for printing.
  • the back electrode 1 is printed on the back of the aluminum nitride substrate 3, and thick film screen printing can be used. After printing, dry it at 150-200°C for 15-20min.
  • the first surface electrode 41 and the second surface electrode 4 are printed on the front surface of the aluminum nitride substrate 3. After printing, they are dried at 150-200°C for 15-20 minutes, and then the first surface electrode 41, the second surface electrode 4 and the back electrode 1Sinter at a high temperature of 840°C-880°C for 30-40min.
  • the resistance layer 5 is printed between the first surface electrode 41 and the second surface electrode 4. After the resistance layer 5 is printed, it is dried at 150-200°C for 15-20 minutes, and then the product after the resistance layer 5 is dried at 840°C- High temperature sintering at 880°C for 30-40min.
  • a glass layer 6 is printed on the resistance layer 5, and the area of the glass layer 6 is larger than that of the resistance layer 5, covering the resistance layer 5, preferably beyond the peripheral edge of the resistance layer 5 by 0.05 mm. After the glass layer 6 is printed, it is dried at 150-200°C for 15-20 minutes, and then the product after drying the glass layer 6 is sintered at a high temperature of 640°C-680°C for 30-40 minutes.
  • the black protective film 7 is screen-printed, and after printing, it is dried at a temperature of 150-200°C for 15-20min, and then the dried product is cured at a temperature of 180°C-200°C for 120-150min.
  • the black protective film 7 does not completely cover the first surface electrode 41 and the second surface electrode 4, and both ends of the black protective film 7 expose a part of the first surface electrode 41 and the second surface electrode 4, respectively.
  • the black protective film includes the following components by weight: carbon black: 5-10 parts, diethylene glycol monoethyl ether: 10-20 parts, aluminum silicate: 10-20 parts, epoxy resin: 10-20 parts , Diluent: 1-10 parts, glass powder: 15-25 parts; the length of the black protective film is 1.25-1.6mm, and the width is 1.20-1.27mm.
  • the input lead can be welded at the position of the lead pad portion 411 of the first surface electrode 41.
  • a conductive electrode tip 2 is formed through a process of silver paste printing or sputtering, thereby connecting the surface electrode and the back electrode 1.
  • the electrical performance data of the high-frequency load sheet product of this embodiment 1 is shown in FIG. 3.
  • the standing wave ratio performance of the high-frequency load plate of this embodiment 1 is the curve 303 in FIG. 3, VSWR ⁇ 1.22, and the electrical performance matching effect at 10-18Ghz is good.
  • the characteristic impedance of the high-frequency load sheet of Example 1 is 50 ⁇ , which can ensure a low standing wave ratio of the product at high frequencies and can withstand a rated power of 20W at the same time.
  • the black protective film of Example 2 is the same as that of Example 1, but the S-shaped microstrip line structure is replaced with a linear microstrip line electrode.
  • the curve 302 is the electrical curve of Example 2.
  • the structure of the S-shaped microstrip line of Example 3 is the same as that of Example 1.
  • the width of the black protective film is also 1.20 to 1.27mm, but the length is longer than the length of the black protective film of the example.
  • the length is 1.7mm, which covers more Multi-faceted electrodes.
  • Curve 301 is the electrical curve of Example 3.
  • the S-shaped microstrip line structure of Example 4 is the same as that of Example 1, and the width of the black protective film is also 1.20 to 1.27 mm, but the length is shorter than that of the black protective film of Example 1, and the length is 1.2 mm.
  • the curve 304 is the electrical characteristic curve of Example 4.
  • the high-frequency load chip of the embodiment of the present invention can be applied to the outdoor unit of a digital microwave system, and the frequency can be expanded to 13GHz/15GHz/18GHz/23GHz and higher to 38GHz frequency band.
  • the high-frequency load plate of the embodiment of the present invention is designed according to the working frequency band of 10-18 GHz, and on the basis of the specified small size (2.54*1.27*0.38mm), it has both high power (20W) and guarantees to meet the standing wave requirements.
  • the background part of the present invention may contain background information about the problem or environment of the present invention, and does not necessarily describe the prior art. Therefore, the content contained in the background technology part is not the applicant's recognition of the prior art.

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Abstract

一种基于氮化铝基板的高频负载片及其制作方法，该高频负载片包括氮化铝基板、第一面电极、第二面电极、电阻层以及背电极，第一面电极和第二面电极相互分离地形成在氮化铝基板的正面，第一面电极通过电阻层与第二面电极相连，背电极形成在氮化铝基板的背面，第二面电极通过形成在氮化铝基板的端面的电极端头与背电极相连。本发明的高频负载片可在10-18GHz状态下满足相应的功率及电性要求，额定功率达20W，工作频率在10-18GHz时具有较低的驻波比。而且，本发明的高频负载片可以匹配低频0-10GHz工作频率。根据本发明的高频负载片的制作方法，可采用基于氮化铝基板的厚膜工艺来制作本发明的高频负载片，与传统的高频负载片的制作方法相比，本发明的制作工艺更为简单。

Description

一种基于氮化铝基板的高频负载片及其制作方法 技术领域
本发明涉及电子元器件，特别是涉及一种基于氮化铝基板的高频负载片及其制作方法。
背景技术
目前，基站用氮化铝基板和厚膜工艺的负载片普遍工作频段是在6GHz以下，最高扩展至8.5GHz。如何使负载片在10-18GHz的工作频段范围内满足相应的功率及电性能要求，是亟待解决的问题。
需要说明的是，在上述背景技术部分公开的信息仅用于对本申请的背景的理解，因此可以包括不构成对本领域普通技术人员已知的现有技术的信息。
发明内容
本发明的主要目的在于克服上述背景技术存在的问题，提供一种基于氮化铝基板的高频负载片及其制作方法。
为实现上述目的，本发明采用以下技术方案：
一种基于氮化铝基板的高频负载片，包括氮化铝基板、第一面电极、第二面电极、电阻层以及背电极，所述第一面电极和所述第二面电极相互分离地形成在所述氮化铝基板的正面，所述第一面电极通过所述电阻层与所述第二面电极相连，所述背电极形成在所述氮化铝基板的背面，所述第二面电极通过形成在所述氮化铝基板的端面的电极端头与所述背电极相连。其中，所述第一面电极可作为引线焊盘，所述第二面电极可作为接地端头。
进一步地，还包括覆盖在所述电阻层上的玻璃层以及覆盖在所述玻璃层上的黑色保护膜，所述第一面电极和所述第二面电极分别延伸到所述黑色保护膜的两端外侧从而暴露在外。
进一步地，所述第一面电极包括一体形成的引线焊盘部、第一纵向延伸部、中间横向转折部、第二纵向延伸部以及横向延伸部，所述第一纵向延伸部从所述引线焊盘部上朝所述第二面电极的方向延伸，所述中间横向转折部的一端与所述第一纵向延伸部垂直连接，所述中间横向转折部的另一端与所述第二纵向延伸部垂直连接，所述第二纵向延伸部朝所述第二面 电极的方向延伸并垂直连接到所述横向延伸部。
进一步地，所述第二面电极为横向延伸的条形电极。
进一步地，所述引线焊盘部的宽度范围为0.6±0.05mm，所述引线焊盘部的长度范围为0.4±0.05mm；所述第一纵向延伸部、所述中间横向转折部和所述第二纵向延伸部的宽度范围为0.15±0.02mm，所述引线焊盘部与所述横向延伸部之间的距离范围为0.8±0.1mm；优选地，所述第一纵向延伸部和所述第二纵向延伸部的长度相等。
进一步地，所述电阻层在所述第一面电极和所述第二面电极之间的长度范围为1.00±0.05mm，所述电阻层在所述第一面电极和所述第二面电极之间的宽度范围为1.00±0.05mm。
进一步地，所述电阻层的两端具有覆盖在所述第一面电极和所述第二面电极上的长度为0.05mm的部分。
进一步地，所述黑色保护膜包括如下按重量计的成分：炭黑：5-10份，二乙二醇单乙醚：10-20份，硅酸铝：10-20份，环氧树脂：10-20份，稀释剂：1-10份，玻璃粉：15-25份；优选地，所述黑色保护膜的长度为1.25-1.6mm，宽度为1.20-1.27mm。
一种制作所述的基于氮化铝基板的高频负载片的方法，包括如下步骤：
S1、在氮化铝基板的背面印刷背电极；
S2、在所述氮化铝基板的正面印刷第一面电极和第二面电极；
S3、烧结所述背电极、所述第一面电极和所述第二面电极；
S4、在所述氮化铝基板的正面印刷电阻层；
S5、烧结所述电阻层；
S6、在所述电阻层上印刷玻璃层；
S7、烧结所述玻璃层；
S8、在所述玻璃层上印刷黑色保护膜；
S9、加热固化所述黑色保护膜；
S10、在所述氮化铝基板的端面通过银浆印刷或者溅射工艺形成电极端头，以导通所述第二面电极和所述背电极。
进一步地，采用以下工艺措施中的一种或多种：
步骤S1中，印刷所述背电极，印刷完所述背电极后以150-200℃的温度烘干15-20min；优选地，采用厚膜工艺丝网印刷所述背电极；
步骤S2中，印刷完所述第一面电极和所述第二面电极后以150-200℃的温度烘干15-20min；优选地，采用厚膜工艺丝网印刷所述第一面电极和 所述第二面电极；
步骤S3中，将所述背电极、所述第一面电极和所述第二面电极以840℃-880℃的温度烧结30-40min；
步骤S4中，印刷完所述电阻层后以150-200℃的温度烘干15-20min；优选地，采用厚膜工艺丝网印刷所述电阻层；
步骤S5中，将所述电阻层以840℃-880℃的温度烧结30-40min；
步骤S6中，印刷完所述玻璃层后以150-200℃的温度烘干15-20min；优选地，采用厚膜工艺丝网印刷所述玻璃层；
步骤S7中，将所述玻璃层以640℃-680℃的温度烧结30-40min；
步骤S8中，印刷完所述黑色保护膜后以150-200℃的温度烘干15-20min；优选地，采用厚膜工艺丝网印刷所述黑色保护膜；
步骤S9中，将所述黑色保护膜以180℃-200℃温度加热固化120-150min。
进一步地，在步骤S1之前还包括将所述氮化铝基板经过无水乙醇超声清洗10-30min后烘干。
进一步地，在步骤S7和步骤S8之间还包括对烧结了所述玻璃层后的产品进行激光修阻，将阻值控制在50±3％Ω的范围。
本发明具有如下有益效果：
本发明提供的基于氮化铝基板的高频负载片包括氮化铝基板、形成在所述氮化铝基板的正面的第一面电极、第二面电极、电阻层以及形成在所述氮化铝基板的背面的背电极，其中所述第一面电极和所述第二面电极相互分离地设置，所述第一面电极通过所述电阻层与所述第二面电极相连，所述第二面电极通过形成在所述氮化铝基板的端面的电极端头与所述背电极相连，采用这种结构设计的高频负载片，可在10-18GHz状态下满足相应的功率及电性要求，其额定功率达20W，工作频率在10-18GHz时具有较低的驻波比。而且，本发明的高频负载片也可以匹配低频0-10GHz工作频率。根据本发明的高频负载片的制作方法，可采用基于氮化铝基板的厚膜工艺来制作本发明的高频负载片，与传统的高频负载片的制作方法相比，本发明基于氮化铝基板的高频负载片的制作工艺更为简单。
在优选的方案中，所配置的黑色保护膜与“S”形的电极微带线，能够进一步显著提升高频负载片的电性能。其中，黑色保护膜的配置极大提升了介电常数(相较于空气层介质)，以及降低损耗(介电损耗以及电导损耗)，导致高频时对应的性能大幅改善。
附图说明
图1为本发明实施例的高频负载片的分解结构示意图。
图2为本发明实施例的高频负载片的俯视结构示意图。
图3为本发明实施例和比较例的高频负载片的电压驻波比性能图。
具体实施方式
以下对本发明的实施方式作详细说明。应该强调的是，下述说明仅仅是示例性的，而不是为了限制本发明的范围及其应用。
需要说明的是，当元件被称为“固定于”或“设置于”另一个元件，它可以直接在另一个元件上或者间接在该另一个元件上。当一个元件被称为是“连接于”另一个元件，它可以是直接连接到另一个元件或间接连接至该另一个元件上。另外，连接既可以是用于固定作用也可以是用于耦合或连通作用。
需要理解的是，术语“长度”、“宽度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明实施例和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多该特征。在本发明实施例的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
参阅图1和图2，在一种实施例中，一种基于氮化铝基板的高频负载片，包括氮化铝基板3、第一面电极41、第二面电极4、电阻层5以及背电极1，所述第一面电极41和所述第二面电极4相互分离地形成在所述氮化铝基板3的正面，所述第一面电极41通过所述电阻层5与所述第二面电极4相连，所述背电极1形成在所述氮化铝基板3的背面，所述第二面电极4通过形成在所述氮化铝基板3的端面的电极端头2与所述背电极1相连。其中，所述第一面电极41可作为基于氮化铝基板的高频负载片的引线焊盘，所述第二面电极4可作为基于氮化铝基板的高频负载片的接地端头。在优选的实施例中，所述氮化铝基板3为长方形块体。
参阅图1和图2，在优选的实施例中，所述基于氮化铝基板的高频负 载片还包括覆盖在所述电阻层5上的玻璃层6以及覆盖在所述玻璃层6上的黑色保护膜7，所述第一面电极41和所述第二面电极4分别延伸到所述黑色保护膜7的两端外侧，从而所述第一面电极41和所述第二面电极4各有一部分暴露在所述黑色保护膜7的外面。
参阅图1和图2，在优选的实施例中，所述第一面电极41包括连接为一体的引线焊盘部411、第一纵向延伸部4121、中间横向转折部4120、第二纵向延伸部4122以及横向延伸部413，所述第一纵向延伸部4121从所述引线焊盘部411上朝所述第二面电极4的方向延伸，所述中间横向转折部4120的一端与所述第一纵向延伸部4121垂直连接，所述中间横向转折部4120的另一端与所述第二纵向延伸部4122垂直连接，即，所述第一纵向延伸部4121和所述第二纵向延伸部4122相互垂直，所述第二纵向延伸部4122朝所述第二面电极4的方向延伸并垂直连接到所述横向延伸部413。上述结构的所述第一面电极41形成了一个“S”形的电极微带线。“S”形既可以是图2所示的“S”形，也可以是镜向反转的“S”形。
在更优选的实施例中，所述引线焊盘部411整体上为矩形，所述横向延伸部413与所述引线焊盘部411相互平行。
参阅图1和图2，在优选的实施例中，所述第二面电极4为横向延伸的条形电极。在更优选的实施例中，所述第二面电极4与所述第一面电极41的横向延伸部413相互平行
参阅图2，在优选的实施例中，所述引线焊盘部411的宽度范围为0.6±0.05mm，所述引线焊盘部411的长度范围为0.4±0.05mm；所述第一纵向延伸部4121、所述中间横向转折部4120和所述第二纵向延伸部4122的宽度范围为0.15±0.02mm，所述引线焊盘部411与所述横向延伸部413之间的距离范围为0.8±0.1mm。
参阅图1和图2，在优选的实施例中，所述第一纵向延伸部4121和所述第二纵向延伸部4122的长度相等。
参阅图2，在优选的实施例中，所述电阻层5在所述第一面电极41和所述第二面电极4之间的长度范围为1.00±0.05mm，所述电阻层5在所述第一面电极41和所述第二面电极4之间的宽度范围为1.00±0.05mm。
参阅图1和图2，在优选的实施例中，所述电阻层5的两端具有覆盖在所述第一面电极41和所述第二面电极4上的长度为0.05mm的部分。
在特别优选的实施例中，所述黑色保护膜包括如下按重量计的成分：炭黑：5-10份，二乙二醇单乙醚：10-20份，硅酸铝：10-20份，环氧树脂： 10-20份，稀释剂：1-10份，玻璃粉：15-25份；所述黑色保护膜的长度为1.25-1.6mm，宽度为1.20-1.27mm。参见图3，采用本实施例的黑色保护膜的配置与“S”形的电极微带线，能够进一步显著提升高频负载片的电性能。其中，黑色保护膜的配置极大提升了介电常数(相较于空气层介质)，以及降低损耗(介电损耗以及电导损耗)，导致高频时对应的性能大幅改善。
在另一种实施例中，一种制作前述任一实施例的基于氮化铝基板的高频负载片的方法，包括如下步骤：
步骤S1、在氮化铝基板3的背面印刷背电极1；
步骤S2、在所述氮化铝基板3的正面印刷第一面电极41和第二面电极4；
步骤S3、烧结所述背电极1、所述第一面电极41和所述第二面电极4；
步骤S4、在所述氮化铝基板3的正面印刷电阻层5；
步骤S5、烧结所述电阻层5；
步骤S6、在所述电阻层5上印刷玻璃层6；
步骤S7、烧结所述玻璃层6；
步骤S8、在所述玻璃层6上印刷黑色保护膜7；
步骤S9、加热固化所述黑色保护膜7；
步骤S10、在所述氮化铝基板3的端面通过银浆印刷或者溅射工艺形成电极端头2，以导通所述第二面电极4和所述背电极1。
在各种优选的实施例中，可以采用以下工艺措施中的一种或多种：
步骤S1中，印刷所述背电极1，印刷完所述背电极1后以150-200℃的温度烘干15-20min；优选地，采用厚膜工艺丝网印刷所述背电极1；
步骤S2中，印刷完所述第一面电极41和所述第二面电极4后以150-200℃的温度烘干15-20min；优选地，采用厚膜工艺丝网印刷所述第一面电极41和所述第二面电极4；
步骤S3中，将所述背电极1、所述第一面电极41和所述第二面电极4以840℃-880℃的温度烧结30-40min；
步骤S4中，印刷完所述电阻层5后以150-200℃的温度烘干15-20min；优选地，采用厚膜工艺丝网印刷所述电阻层5；
步骤S5中，将所述电阻层5以840℃-880℃的温度烧结30-40min；
步骤S6中，印刷完所述玻璃层6后以150-200℃的温度烘干15-20min；优选地，采用厚膜工艺丝网印刷所述玻璃层6；
步骤S7中，将所述玻璃层6以640℃-680℃的温度烧结30-40min；
步骤S8中，印刷完所述黑色保护膜7后以150-200℃的温度烘干15-20min；优选地，采用厚膜工艺丝网印刷所述黑色保护膜7；
步骤S9中，将所述黑色保护膜7以180℃-200℃温度加热固化120-150min。
在进一步优选的实施例中，所述方法在步骤S1之前还包括：将所述氮化铝基板3经过无水乙醇超声清洗10-30min后烘干。
在进一步优选的实施例中，所述方法在步骤S7和步骤S8之间还包括：对烧结了所述玻璃层6后的产品进行激光修阻，将阻值控制在50±3％Ω的范围。
本发明实施例提供的基于氮化铝基板的高频负载片包括氮化铝基板3、形成在所述氮化铝基板3的正面的第一面电极41、第二面电极4、电阻层5以及形成在所述氮化铝基板3的背面的背电极1，其中所述第一面电极41和所述第二面电极4相互分离地设置，所述第一面电极41通过所述电阻层5与所述第二面电极4相连，所述第二面电极4通过形成在所述氮化铝基板3的端面的电极端头2与所述背电极1相连，采用这种结构设计的高频负载片，可在10-18GHz状态下满足相应的功率及电性要求，其额定功率达20W，工作频率在10-18GHz时具有较低的驻波比。而且，本发明实施例的高频负载片也可以匹配低频0-10GHz工作频率。根据本发明实施例的高频负载片的制作方法，可采用基于氮化铝基板的厚膜工艺来制作本发明实施例的高频负载片，与传统的高频负载片的制作方法相比，本发明实施例的基于氮化铝基板的高频负载片的制作工艺更为简单。
以下进一步举例描述本发明具体实施例的基于氮化铝基板的高频负载片。
在具体实施例中，一种基于氮化铝基板的高频负载片，包括高频负载片本体，所述高频负载片本体包括氮化铝基板3，所述氮化铝基板3的正面两端分别设有基于面电极的引线焊盘和接地端头。所述引线焊盘与所述接地端头之间连接有电阻，所述氮化铝基板3的外部有两层保护层。第一层保护层的为玻璃层6，第二层保护层为黑色保护膜7。所述的引线焊盘是作为焊接部位,所述的接地端头连接电阻层5与电阻层5相背的面上的背电极1，起到导通的作用，使得高频负载片的正面与背面形成回路。所述电阻层5可以采用激光划切电阻层5的方法来调整阻值。较佳地，所述氮化 铝基板3为长方形块体。作为示例，所述基于氮化铝基板的尺寸为2.54mm*1.27mm*0.38mm。较佳地，所述基于氮化铝基板的高频负载片的额定功率为20W。
实施例1
如图2所示，第一面电极41的引线焊盘部411用于焊接引线，第二面电极4作为面电极接地端，其中引线焊盘部411的宽度①：0.6±0.05mm，长度②：0.4±0.05mm，且为电阻输入端。第一面电极41形成包括引线焊盘部411、第一纵向延伸部4121、中间横向转折部4120、第二纵向延伸部4122以及横向延伸部413的S形电极，其中第一纵向延伸部4121、中间横向转折部4120、第二纵向延伸部4122的线宽为0.15±0.02mm。该S形电极在高频时能够增加电感量，且在高频起到微带线匹配作用。
如图2所示，第一面电极41形成S形电极微带线，尤其当第一纵向延伸部4121与第二纵向延伸部4122的长度比是1:1时，其匹配效果最佳，可以有效地降低驻波比。优选地，其中第一纵向延伸部4121与第二纵向延伸部4122的实际纵向总长度，即第一面电极41的引线焊盘部411与横向延伸部413之间的距离③：0.8±0.1mm。
如图2所示，在第二面电极4与第一面电极41的横向延伸部413之间搭接有电阻层5，且电阻层5的长度④在1.00±0.05mm，而且电阻层5的宽度⑤为1.00±0.05mm时，其电性最优，且可以吸收额定20W的功率。
如图2所示，为了电阻层5与第二面电极4、第一面电极41的横向延伸部413之间的搭接效果更好，电阻层5的实际长度比④的左右端均多出0.05mm，即，电阻层5的两端具有覆盖在第一面电极41的横向延伸部413和第二面电极4上的长度为0.05mm的部分。
在特别优选的实施例中，所述黑色保护膜包括如下按重量计的成分：炭黑：5-10份，二乙二醇单乙醚：10-20份，硅酸铝：10-20份，环氧树脂：10-20份，稀释剂：1-10份，玻璃粉：15-25份；所述黑色保护膜的长度为1.25-1.6mm，宽度为1.20-1.27mm。参见图3，采用本实施例的黑色保护膜的配置以及“S”形的电极微带线，能够进一步显著提升高频负载片的电性能。其中，黑色保护膜的配置极大提升了介电常数(相较于空气层介质)，以及降低损耗(介电损耗以及电导损耗)，导致高频时对应的性能大幅改善。
如图1所示，第二面电极4通过电极端头2与背电极1连通，从而形成通路。
基于氮化铝基板的高频负载片的制作工艺
将氮化铝基板3经过无水乙醇超声清洗10-30min后烘干待印刷。
在氮化铝基板3背面印刷背电极1，可采用厚膜丝网印刷。印刷完经过150-200℃烘干15-20min。
在氮化铝基板3的正面印刷第一面电极41和第二面电极4，印刷完经过150-200℃烘干15-20min，然后对第一面电极41、第二面电极4与背电极1以840℃-880℃的高温烧结30-40min。
在第一面电极41与第二面电极4之间印刷电阻层5，电阻层5印刷完经过150-200℃烘干15-20min，然后对烘干了电阻层5后的产品以840℃-880℃高温烧结30-40min。
在电阻层5上印刷玻璃层6，玻璃层6的面积比电阻层5大，覆盖电阻层5，较佳超出电阻层5的四周边缘0.05mm。玻璃层6印刷完后，经过150-200℃烘干15-20min，然后对烘干了玻璃层6后的产品以640℃-680℃高温烧结30-40min。
对烧结了玻璃层6后的产品进行激光修阻，将阻值控制在50±3％Ω的范围。
产品经激光修阻后，通过丝网印刷黑色保护膜7，印刷完以150-200℃的温度烘干15-20min，然后对烘干后的产品以180℃-200℃温度固化120-150min。黑色保护膜7未全部覆盖第一面电极41和第二面电极4，黑色保护膜7的两端分别露出第一面电极41和第二面电极4的一部分。所述黑色保护膜包括如下按重量计的成分：炭黑：5-10份，二乙二醇单乙醚：10-20份，硅酸铝：10-20份，环氧树脂：10-20份，稀释剂：1-10份，玻璃粉：15-25份；所述黑色保护膜的长度为1.25-1.6mm，宽度为1.20-1.27mm。
此时可在第一面电极41的引线焊盘部411的位置进行输入引线的焊接。
在氮化铝基板3的端面，经过银浆印刷或者溅射的工艺形成导电的电极端头2，由此导通面电极和背电极1。
由此，制得实施例1的高频负载片。
基于氮化铝基板的高频负载片的性能测试数据
本实施例1的高频负载片产品的电性能数据如图3所示。本实施例1 的高频负载片的驻波比性能如图3中的曲线303，VSWR<1.22，在10-18Ghz的电性能匹配效果良好。实施例1的高频负载片的特征阻抗为50Ω，能够保证产品在高频下低的驻波比，同时也能承受额定20W的功率。
实施例2
实施例2的黑色保护膜与实施例1相同，但将S形微带线结构替换为直线微带线电极。曲线302为实施例2的电性曲线。
实施例3
实施例3的S形微带线结构与实施例1相同，黑色保护膜的宽度也在1.20-1.27mm，但长度比实施例的黑色保护膜的长度更长，长度为1.7mm，覆盖住更多面电极。曲线301为实施例3的电性曲线。
实施例4
实施例4的S形微带线结构与实施例1相同，黑色保护膜的宽度也在1.20-1.27mm，但长度比实施例1的黑色保护膜的长度更短，长度为1.2mm。曲线304为实施例4的电性曲线。
对比可发现实施例1的高频负载片的电性曲线是最优的。
本发明实施例的高频负载片可应用于数字微波系统室外单元，频率可拓展至13GHz/15GHz/18GHz/23GHz以及更高至38GHz频段。本发明实施例的高频负载片按照10-18GHz的工作频段进行设计，在规定小尺寸(2.54*1.27*0.38mm)的基础上，兼具大功率(20W)，同时保证满足驻波要求。
本发明的背景部分可以包含关于本发明的问题或环境的背景信息，而不一定是描述现有技术。因此，在背景技术部分中包含的内容并不是申请人对现有技术的承认。
以上内容是结合具体/优选的实施方式对本发明所作的进一步详细说明，不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说，在不脱离本发明构思的前提下，其还可以对这些已描述的实施方式做出若干替代或变型，而这些替代或变型方式都应当视为属于本发明的保护范围。在本说明书的描述中，参考术语“一种实施例”、“一些实施例”、“优选实施例”、“示例”、“具体示例”、或“一些示例”等的描 述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。尽管已经详细描述了本发明的实施例及其优点，但应当理解，在不脱离专利申请的保护范围的情况下，可以在本文中进行各种改变、替换和变更。

Claims (10)

  1. 一种基于氮化铝基板的高频负载片，其特征在于，包括氮化铝基板、第一面电极、第二面电极、电阻层以及背电极，所述第一面电极和所述第二面电极相互分离地形成在所述氮化铝基板的正面，所述第一面电极通过所述电阻层与所述第二面电极相连，所述背电极形成在所述氮化铝基板的背面，所述第二面电极通过形成在所述氮化铝基板的端面的电极端头与所述背电极相连。
  2. 根据权利要求1所述的基于氮化铝基板的高频负载片，其特征在于，还包括覆盖在所述电阻层上的玻璃层以及覆盖在所述玻璃层上的黑色保护膜，所述第一面电极和所述第二面电极分别延伸到所述黑色保护膜的两端外侧从而暴露在外。
  3. 根据权利要求1至2任一项所述的基于氮化铝基板的高频负载片，其特征在于，所述第一面电极包括一体形成的引线焊盘部、第一纵向延伸部、中间横向转折部、第二纵向延伸部以及横向延伸部，所述第一纵向延伸部从所述引线焊盘部上朝所述第二面电极的方向延伸，所述中间横向转折部的一端与所述第一纵向延伸部垂直连接，所述中间横向转折部的另一端与所述第二纵向延伸部垂直连接，所述第二纵向延伸部朝所述第二面电极的方向延伸并垂直连接到所述横向延伸部；优选地，所述第二面电极为横向延伸的条形电极。
  4. 根据权利要求3所述的基于氮化铝基板的高频负载片，其特征在于，所述引线焊盘部的宽度范围为0.6±0.05mm，所述引线焊盘部的长度范围为0.4±0.05mm；所述第一纵向延伸部、所述中间横向转折部和所述第二纵向延伸部的宽度范围为0.15±0.02mm，所述引线焊盘部与所述横向延伸部之间的距离范围为0.8±0.1mm；优选地，所述第一纵向延伸部和所述第二纵向延伸部的长度相等。
  5. 根据权利要求3或4所述的基于氮化铝基板的高频负载片，其特征在于，所述电阻层在所述第一面电极和所述第二面电极之间的长度范围为1.00±0.05mm，所述电阻层在所述第一面电极和所述第二面电极之间的宽度范围为1.00±0.05mm。
  6. 根据权利要求5所述的基于氮化铝基板的高频负载片，其特征在于，所述电阻层的两端具有覆盖在所述第一面电极和所述第二面电极上的长度为0.05mm的部分。
  7. 根据权利要求5或6所述的基于氮化铝基板的高频负载片，其特征在于，所述黑色保护膜包括如下按重量计的成分：炭黑5-10份，二乙二醇单乙醚10-20份，硅酸铝10-20份，环氧树脂10-20份，稀释剂1-10份，玻璃粉15-25份；优选地，所述黑色保护膜的长度为1.25-1.6mm，宽度为1.20-1.27mm。
  8. 一种制作根据权利要求1至7任一项所述的基于氮化铝基板的高频负载片的方法，其特征在于，包括如下步骤：
    S1、在氮化铝基板的背面印刷背电极；
    S2、在所述氮化铝基板的正面印刷第一面电极和第二面电极；
    S3、烧结所述背电极、所述第一面电极和所述第二面电极；
    S4、在所述氮化铝基板的正面印刷电阻层；
    S5、烧结所述电阻层；
    S6、在所述电阻层上印刷玻璃层；
    S7、烧结所述玻璃层；
    S8、在所述玻璃层上印刷黑色保护膜；
    S9、加热固化所述黑色保护膜；
    S10、在所述氮化铝基板的端面通过银浆印刷或者溅射工艺形成电极端头，以导通所述第二面电极和所述背电极。
  9. 根据权利要求7所述的基于氮化铝基板的高频负载片的方法，其特征在于，采用以下工艺措施中的一种或多种：
    步骤S1中，印刷所述背电极，印刷完所述背电极后以150-200℃的温度烘干15-20min；优选地，采用厚膜工艺丝网印刷所述背电极；
    步骤S2中，印刷完所述第一面电极和所述第二面电极后以150-200℃的温度烘干15-20min；优选地，采用厚膜工艺丝网印刷所述第一面电极和所述第二面电极；
    步骤S3中，将所述背电极、所述第一面电极和所述第二面电极以840℃-880℃的温度烧结30-40min；
    步骤S4中，印刷完所述电阻层后以150-200℃的温度烘干15-20min；优选地，采用厚膜工艺丝网印刷所述电阻层；
    步骤S5中，将所述电阻层以840℃-880℃的温度烧结30-40min；
    步骤S6中，印刷完所述玻璃层后以150-200℃的温度烘干15-20min；优选地，采用厚膜工艺丝网印刷所述玻璃层；
    步骤S7中，将所述玻璃层以640℃-680℃的温度烧结30-40min；
    步骤S8中，印刷完所述黑色保护膜后以150-200℃的温度烘干15-20min；优选地，采用厚膜工艺丝网印刷所述黑色保护膜；
    步骤S9中，将所述黑色保护膜以180℃-200℃温度加热固化120min；
    在步骤S1之前还包括将所述氮化铝基板经过无水乙醇超声清洗10-30min后烘干。
  10. 根据权利要求8或9所述的基于氮化铝基板的高频负载片的方法，其特征在于，在步骤S7和步骤S8之间还包括对烧结了所述玻璃层后的产品进行激光修阻，将阻值控制在50±3％Ω的范围。
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