WO2021093280A1 - 高分辨率Micro-OLED的制备方法以及显示模组 - Google Patents

高分辨率Micro-OLED的制备方法以及显示模组 Download PDF

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WO2021093280A1
WO2021093280A1 PCT/CN2020/088201 CN2020088201W WO2021093280A1 WO 2021093280 A1 WO2021093280 A1 WO 2021093280A1 CN 2020088201 W CN2020088201 W CN 2020088201W WO 2021093280 A1 WO2021093280 A1 WO 2021093280A1
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layer
oled
light
preparing
resolution micro
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French (fr)
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杜晓松
杨小龙
周文斌
张峰
孙剑
高裕弟
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昆山梦显电子科技有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer

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  • the invention relates to the field of OLED display manufacturing, in particular to a method for preparing a high-resolution Micro-OLED and a display module with the high-resolution Micro-OLED.
  • OLED Organic Light-Emitting Diode
  • CTR Cathode Ray Tube
  • TFT-LCD Thin Film Transistor-Liquid Crystal Display
  • the display methods for realizing full-color OLED include: RGB three-color arrangement light emitting method, blue light and light conversion layer method.
  • Blue light and light conversion layer methods are widely used because of their low cost and simple process.
  • the light conversion layer in the prior art cannot completely absorb all the blue excitation light sources, so that each red/green sub-pixel emits red/green light and is accompanied by a certain proportion of blue light, thereby reducing the color gamut.
  • the purpose of the present invention is to provide a method for preparing a high-resolution Micro-OLED, which uses the localized surface plasmon resonance effect of the metal in the light conversion layer to make the sub-pixel
  • the intensity of the fluorescence peak is increased and the blue peak disappears, thereby effectively improving the overall color gamut.
  • the present invention provides a method for preparing a high-resolution Micro-OLED, which includes the following steps:
  • S1 Provide a base substrate, and prepare a light-emitting pixel layer on the base substrate;
  • S3 preparing a black matrix layer and a light conversion layer for converting one color into another color on the thin film encapsulation layer, the light conversion layer including a color change layer;
  • the color change layer includes a quantum dot layer, a nano metal layer, and a barrier layer located between the quantum dot layer and the nano metal layer.
  • the preparation method of the color change layer includes the following steps:
  • the preparation method of the color change layer further includes:
  • step S4 further includes the following steps:
  • the protective layer is aluminum oxide.
  • step S1 specifically includes the following steps:
  • S11 Provide a base substrate, and prepare a plurality of regularly arranged vias on the base substrate;
  • an anode layer is vapor-deposited on the base substrate, and the anode layer includes anode units corresponding to the via holes one to one;
  • a cathode layer is vapor-deposited on the surface of the OLED light-emitting layer to form the light-emitting pixel layer.
  • the OLED light-emitting layer is a blue organic electroluminescent device.
  • the OLED light emitting layer includes an organic light emitting layer, a hole injection layer and a hole transport layer located between the anode layer and the organic light emitting layer, and an electron injection layer located between the cathode layer and the organic light emitting layer And the electron transport layer.
  • the present invention also provides a display module, including a high-resolution Micro-OLED layer made by the aforementioned high-resolution Micro-OLED preparation method and a thin film transistor electrically connected to the high-resolution Micro-OLED layer Array.
  • the preparation method of the high-resolution Micro-OLED of the present invention utilizes the localized surface plasmon resonance effect of the metal in the light conversion layer, so that the intensity of the fluorescence peak in the sub-pixel is enhanced, and the blue peak disappears. Thereby effectively improving the overall color gamut.
  • Fig. 1 is a schematic flow chart of the preparation method of the high-resolution Micro-OLED of the present invention.
  • Fig. 2 is a schematic flowchart of step S1 in Fig. 1.
  • Figure 3 is a schematic diagram of the preparation process of the color change layer.
  • FIG. 4 is a schematic diagram of the structure of the display module of the present invention.
  • the preparation method of the high-resolution Micro-OLED of the present invention includes the following steps:
  • a base substrate 10 is provided, and a light-emitting pixel layer 20 is prepared on the base substrate 10.
  • a thin-film packaging layer 30 is prepared on the light-emitting pixel layer 20 to encapsulate the light-emitting pixel layer 20.
  • S3 Prepare a black matrix layer 40 and a light conversion layer 50 for converting one color into another color on the thin film encapsulation layer 30, and the black matrix layer 40 and the light conversion layer 50 are spaced apart.
  • S4 Encapsulate the black matrix layer 40 and the light conversion layer 50 with a cover 60 to obtain a high-resolution Micro-OLED.
  • step S1 also includes the following steps:
  • a base substrate 10 is provided, and a plurality of regularly arranged via holes 11 are prepared on the base substrate 10.
  • an anode layer 21 is vapor-deposited on the base substrate 10, and the anode layer 21 includes a plurality of anode units 211; the anode units 211 correspond to the via holes 11 on a one-to-one basis.
  • a cathode layer 23 is vapor-deposited on the surface of the OLED light-emitting layer 22 to form the light-emitting pixel layer 20.
  • the base substrate 10 is a silicon substrate.
  • the anode layer 21 is composed of a plurality of anode cells 211 arranged in a pixel pattern, and the anode cells 211 are indium tin oxide film (ITO). In this embodiment, the width of the anode unit 211 is 5 microns.
  • the OLED light emitting layer 22 includes an organic light emitting layer, a hole injection layer and a hole transport layer located between the anode layer 21 and the organic light emitting layer, and an electron injection layer and an electron transport layer located between the cathode layer 23 and the organic light emitting layer. .
  • the hole transport layer is located between the organic light-emitting layer and the hole injection layer; the electron transport layer is located between the organic light-emitting layer and the electron injection layer.
  • the cathode layer 23 is a conductive thin film layer made of metal or metal oxide material.
  • the OLED light-emitting layer 22 is a blue organic electroluminescent device.
  • the thin film encapsulation layer 30 may be an organic thin film, an inorganic thin film, or an inorganic thin film stacked on an organic thin film.
  • the film encapsulation layer 30 is provided with a film alignment mark 31.
  • the film alignment mark 31 may be composed of some grid bars with a certain pitch, or may be an alignment mark composed of other forms.
  • the light conversion layer 50 includes a first color change layer 51, a second color change layer 52, and cavities 53 arranged at intervals.
  • the first color change layer 51 and the second color change layer 52 have the same structure, including a quantum dot layer 501, a nano metal layer 502, and a barrier layer 503 located between the quantum dot layer 501 and the nano metal layer 502. No color change layer is provided in the holes 53 so that the blue light emitted by the OLED light-emitting layer 22 can pass directly. Since the first color change layer 51 and the second color change layer 52 contain metal nanomaterials, the local surface plasmon resonance effect of metal can be used to enhance the fluorescence peaks of red and green light and reduce blue light. Fluorescence peak, and then effectively improve the color gamut.
  • the preparation method of the first color change layer 51 and the second color change layer 52 includes the following steps:
  • S35 Use plasma cleaning technology to clean the quantum dot residues left on the thin film encapsulation layer 30.
  • step S4 also includes the following steps:
  • a protective layer 61 is prepared on the black matrix layer 40 and the light conversion layer 50.
  • the protective layer 61 is aluminum oxide.
  • a photosensitive adhesive 62 is used to encapsulate the cover 60.
  • the cover plate 60 may be a glass plate or a polyimide (PI) cover plate.
  • the cover plate 60 is fixed on the protective layer 61 by a photosensitive adhesive 62.
  • the present invention also discloses a display module, including a high-resolution Micro-OLED layer and a thin film transistor array electrically connected to the high-resolution Micro-OLED layer.
  • the high-resolution Micro-OLED layer is based on the high resolution of the present invention.
  • the resolution Micro-OLED is made by the manufacturing method.
  • the preparation method of the high-resolution Micro-OLED of the present invention utilizes the localized surface plasmon resonance effect of the metal in the light conversion layer 50, so that the intensity of the fluorescence peak in the sub-pixel is enhanced, and the blue peak disappears. , Thereby effectively improving the overall color gamut.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本发明提供了一种高分辨率Micro-OLED的制备方法，包括如下步骤：S1：提供一衬底基板，在所述衬底基板上制备发光像素层；S2：在所述发光像素层上制备薄膜封装层，以对所述发光像素层进行封装；S3：在所述薄膜封装层上制备黑色矩阵层以及将一种颜色转换成另一种颜色的光转换层，所述光转换层包括色变层；S4：对所述黑色矩阵层、光转换层进行盖板封装，以获得高分辨率Micro-OLED。相较于现有技术，本发明高分辨率Micro-OLED的制备方法利用光转换层中金属的局域表面等离子体激元共振作用，使得子像素中的荧光峰的强度增强，蓝光峰消失，从而有效改善了整体色域。

Description

高分辨率Micro-OLED的制备方法以及显示模组
本申请要求了申请日为2019年11月13日，申请号为201911105293.9，发明名称为“高分辨率Micro-OLED的制备方法以及显示模组”的中国发明专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及OLED显示器制造领域，尤其涉及一种高分辨率Micro-OLED的制备方法以及具有该高分辨率Micro-OLED的显示模组。
背景技术
OLED(Organic Light-Emitting Diode，有机发光二极管)显示器与CTR(Cathode Ray Tube，阴极射线管)显示器、TFT-LCD(Thin Film Transistor-Liquid Crystal Display，薄膜晶体管液晶显示器)相比具有更轻和更薄的外观设计、更宽的可视视角、更快的响应速度以及更低的功耗等特点，因此OLED显示器已逐渐作为下一代显示设备而备受人们的关注。
实现全彩OLED的显示方法包括：RGB三色排列发光法、蓝光和光转换层法。蓝光和光转换层法因其成本低、工艺简单而被广泛使用。然而，现有技术中的光转换层不能完全吸收所有的蓝光激发光源，从而导致每个红/绿子像素在发出红/绿光的同时还伴有一定比例的蓝光，进而致使色域降低。
鉴于上述问题，有必要提供一种新的高分辨率Micro-OLED的制备方法，以解决上述问题。
发明内容
本发明的目的在于提供一种高分辨率Micro-OLED的制备方法，该高分辨率Micro-OLED的制备方法利用光转换层中金属的局域表面等离子体激元共振作用，使得子像素中的荧光峰的强度增强，蓝光峰消失，从而有效改善了整体色域。
为实现上述目的，本发明提供了一种高分辨率Micro-OLED的制备方法，包括如下步骤：
S1：提供一衬底基板，在所述衬底基板上制备发光像素层；
S2：在所述发光像素层上制备薄膜封装层，以对所述发光像素层进行封装；
S3：在所述薄膜封装层上制备黑色矩阵层以及将一种颜色转换成另一种颜色的光转换层，所述光转换层包括色变层；
S4：对所述黑色矩阵层、光转换层进行盖板封装，以获得高分辨率Micro-OLED。
作为本发明的进一步改进，所述色变层包括量子点层、纳米金属层以及位于所述量子点层和纳米金属层之间的阻隔层。
作为本发明的进一步改进，所述色变层的制备方法包括如下步骤：
S31：在所述薄膜封装层上制备色变层；
S32：采用纳米压印技术，将透明的石英压印模板压在所述薄膜封装层上，并施加一定的压力；
S33：利用紫外光进行固化；
S34：将石英压印模板与所述薄膜封装层分离。
作为本发明的进一步改进，所述色变层的制备方法还包括：
S35：采用等离子体清洗技术，清洗留在所述薄膜封装层上的量子点残留物。
作为本发明的进一步改进，所述步骤S4还包括如下步骤：
S41：采用原子层沉积技术，在所述黑色矩阵层、光转换层上制备保护层；
S42：在所述保护层上，利用光敏胶进行盖板封装。
作为本发明的进一步改进，所述保护层为三氧化二铝。
作为本发明的进一步改进，所述步骤S1具体包括如下步骤：
S11：提供一衬底基板，在所述衬底基板上制备若干规则排列的过孔；
S12：采用自对准工艺，在所述衬底基板上蒸镀阳极层，所述阳极层包括与所述过孔一一对应的阳极单元；
S13：在所述阳极层的表面蒸镀OLED发光层；
S14：在所述OLED发光层的表面蒸镀阴极层，以形成所述发光像素层。
作为本发明的进一步改进，所述OLED发光层为蓝光有机电致发光器件。
作为本发明的进一步改进，所述OLED发光层包括有机发光层、位于阳极层与有机发光层之间的空穴注入层和空穴传输层以及位于阴极层与有机发光层之间的电子注入层和电子传输层。
本发明还提供了一种显示模组，包括通过前述高分辨率Micro-OLED的制备方法制成的高分辨率Micro-OLED层以及与所述高分辨率Micro-OLED层电性连接的薄膜晶体管阵列。
本发明的有益效果是：本发明高分辨率Micro-OLED的制备方法利用光转换层中金属的局域表面等离子体激元共振作用，使得子像素中的荧光峰的强度增强，蓝光峰消失，从而有效改善了整体色域。
附图说明
图1是本发明高分辨率Micro-OLED的制备方法的流程示意图。
图2是图1中步骤S1的流程示意图。
图3是色变层的制备流程示意图。
图4是本发明显示模组的结构示意图。
具体实施方式
为了使本发明的目的、技术方案和优点更加清楚，下面结合附图和具体实施例对本发明进行详细描述。
请参阅图1以及图4所示，本发明高分辨率Micro-OLED的制备方法包括如下步骤：
S1：提供一衬底基板10，在所述衬底基板10上制备发光像素层20。
S2：采用薄膜封装技术，在所述发光像素层20上制备薄膜封装层30，以对所述发光像素层20进行封装。
S3：在所述薄膜封装层30上制备黑色矩阵层40以及将一种颜色转换成另一种颜色的光转换层50，且所述黑色矩阵层40与所述光转换层50间隔设置。
S4：对所述黑色矩阵层40、光转换层50进行盖板60封装，以获得高分辨率Micro-OLED。
请参阅图2以及图4所示，所述步骤S1还包括如下步骤：
S11：提供一衬底基板10，在所述衬底基板10上制备若干规则排列的过孔11。
S12：采用自对准工艺，在所述衬底基板10上蒸镀阳极层21，所述阳极层21包括若干阳极单元211；所述阳极单元211与所述过孔11一一对应。
S13：在所述阳极层21的表面蒸镀OLED发光层22。
S14：在所述OLED发光层22的表面上蒸镀阴极层23，以形成所述发光像素层20。
所述衬底基板10为硅基板。所述阳极层21由若干呈像素图形排布的阳极单元211排列构成，所述阳极单元211为氧化铟锡膜(ITO)。 在本实施例中，所述阳极单元211的宽度为5微米。所述OLED发光层22包括有机发光层、位于阳极层21与有机发光层之间的空穴注入层和空穴传输层以及位于阴极层23与有机发光层之间的电子注入层和电子传输层。
进一步的，空穴传输层位于有机发光层与空穴注入层之间；电子传输层位于有机发光层与电子注入层之间。所述阴极层23为采用金属或金属氧化物材料制成的导电薄膜层。在本实施例中，所述OLED发光层22为蓝光有机电致发光器件。
所述薄膜封装层30可以是有机薄膜、无机薄膜，或者是有机薄膜上堆叠无机薄膜。所述薄膜封装层30上设置有薄膜对准标记31。所述薄膜对准标记31可以是由一些确定间距的栅条组成，或者是其它形式构成的对准标记。
请参阅图4所示，所述光转换层50包括相互间隔设置的第一色变层51、第二色变层52以及空穴53。所述第一色变层51、第二色变层52的结构相同，包括量子点层501、纳米金属层502以及位于所述量子点层501和纳米金属层502之间的阻隔层503。所述空穴53内不设置色变层，使得所述OLED发光层22发出的蓝光可以直接通过。由于所述第一色变层51、第二色变层52中包含有金属纳米材料，从而可以利用金属的局域表面等离子体激元共振效应来增强红光、绿光的荧光峰，降低蓝光的荧光峰，进而有效改善色域。
请参阅图3所示，所述第一色变层51、第二色变层52的制备方法包括如下步骤：
S31：在所述薄膜封装层30上制备色变层；
S32：采用纳米压印技术，将透明的石英压印模板压在所述薄膜封装层30上，并施加一定的压力；
S33：利用紫外光进行固化；
S34：将石英压印模板与所述薄膜封装层30分离。
S35：采用等离子体清洗技术，清洗留在所述薄膜封装层30上的量子点残留物。
进一步地，所述步骤S4还包括如下步骤：
S41：采用原子层沉积技术，在所述黑色矩阵层40、光转换层50上制备保护层61。所述保护层61为三氧化二铝。
S42：在所述保护层61上，利用光敏胶62进行盖板60封装。
所述盖板60可以是玻璃板，也可以是聚酰亚胺(PI)盖板。所述盖板60通过光敏胶62固定在所述保护层61上。
本发明还揭示了一种显示模组，包括高分辨率Micro-OLED层以及与高分辨率Micro-OLED层电性连接的薄膜晶体管阵列，所述高分辨率Micro-OLED层是以本发明高分辨率Micro-OLED的制备方法制成的。
相较于现有技术，本发明高分辨率Micro-OLED的制备方法利用光转换层50中金属的局域表面等离子体激元共振作用，使得子像素中的荧光峰的强度增强，蓝光峰消失，从而有效改善了整体色域。
以上实施例仅用以说明本发明的技术方案而非限制，尽管参照较佳实施例对本发明进行了详细说明，本领域的普通技术人员应当理解，可以对本发明的技术方案进行修改或者等同替换，而不脱离本发明技术方案的精神和范围。

Claims (10)

  1. 一种高分辨率Micro-OLED的制备方法，其特征在于，包括如下步骤：
    S1：提供一衬底基板，在所述衬底基板上制备发光像素层；
    S2：在所述发光像素层上制备薄膜封装层，以对所述发光像素层进行封装；
    S3：在所述薄膜封装层上制备黑色矩阵层以及将一种颜色转换成另一种颜色的光转换层，所述光转换层包括色变层；
    S4：对所述黑色矩阵层、光转换层进行盖板封装，以获得高分辨率Micro-OLED。
  2. 如权利要求1所述的高分辨率Micro-OLED的制备方法，其特征在于：所述色变层包括量子点层、纳米金属层以及位于所述量子点层和纳米金属层之间的阻隔层。
  3. 如权利要求2所述的高分辨率Micro-OLED的制备方法，其特征在于，所述色变层的制备方法包括如下步骤：
    S31：在所述薄膜封装层上制备色变层；
    S32：采用纳米压印技术，将透明的石英压印模板压在所述薄膜封装层上，并施加一定的压力；
    S33：利用紫外光进行固化；
    S34：将石英压印模板与所述薄膜封装层分离。
  4. 如权利要求3所述的高分辨率Micro-OLED的制备方法，其特征在于，所述色变层的制备方法还包括：
    S35：采用等离子体清洗技术，清洗留在所述薄膜封装层上的量子点残留物。
  5. 如权利要求1所述的高分辨率Micro-OLED的制备方法，其特征在于，所述步骤S4还包括如下步骤：
    S41：采用原子层沉积技术，在所述黑色矩阵层、光转换层上制备保护层；
    S42：在所述保护层上，利用光敏胶进行盖板封装。
  6. 如权利要求5所述的高分辨率Micro-OLED的制备方法，其特征在于：所述保护层为三氧化二铝。
  7. 如权利要求1所述的高分辨率Micro-OLED的制备方法，其特征在于，所述步骤S1具体包括如下步骤：
    S11：提供一衬底基板，在所述衬底基板上制备若干规则排列的过孔；
    S12：采用自对准工艺，在所述衬底基板上蒸镀阳极层，所述阳极层包括与所述过孔一一对应的阳极单元；
    S13：在所述阳极层的表面蒸镀OLED发光层；
    S14：在所述OLED发光层的表面蒸镀阴极层，以形成所述发光像素层。
  8. 如权利要求7所述的高分辨率Micro-OLED的制备方法，其特征在于：所述OLED发光层为蓝光有机电致发光器件。
  9. 如权利要求7所述的高分辨率Micro-OLED的制备方法，其特征在于：所述OLED发光层包括有机发光层、位于阳极层与有机发光层之间的空穴注入层和空穴传输层以及位于阴极层与有机发光层之间的电子注入层和电子传输层。
  10. 一种显示模组，包括高分辨率Micro-OLED层以及与高分辨率Micro-OLED层电性连接的薄膜晶体管阵列，其特征在于：所述高分辨率Micro-OLED层采用权利要求1～9中任意一项所述的高分辨率Micro-OLED的制备方法制成。
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