WO2021092950A1 - 显示面板及显示装置 - Google Patents

显示面板及显示装置 Download PDF

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Publication number
WO2021092950A1
WO2021092950A1 PCT/CN2019/118952 CN2019118952W WO2021092950A1 WO 2021092950 A1 WO2021092950 A1 WO 2021092950A1 CN 2019118952 W CN2019118952 W CN 2019118952W WO 2021092950 A1 WO2021092950 A1 WO 2021092950A1
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WIPO (PCT)
Prior art keywords
electrode
substrate
layer
display
display panel
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PCT/CN2019/118952
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English (en)
French (fr)
Inventor
侯学成
车春城
李成
Original Assignee
京东方科技集团股份有限公司
北京京东方传感技术有限公司
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Application filed by 京东方科技集团股份有限公司, 北京京东方传感技术有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/977,399 priority Critical patent/US20230100538A1/en
Priority to PCT/CN2019/118952 priority patent/WO2021092950A1/zh
Priority to CN201980002461.3A priority patent/CN113133323A/zh
Publication of WO2021092950A1 publication Critical patent/WO2021092950A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H10K39/34—Organic image sensors integrated with organic light-emitting diodes [OLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light

Definitions

  • the embodiments of the present disclosure relate to the field of display technology, and more specifically, to a display panel and a display device.
  • the under-screen optical fingerprint recognition technology is in line with the development trend of full-screen mobile phones. This technology can unlock fingerprints everywhere on the display.
  • the embodiments of the present disclosure provide a display panel and a display device.
  • a display panel includes: a display substrate for displaying; a sensing substrate for sensing fingerprints arranged opposite to the display substrate, the sensing substrate including a first substrate and a first substrate located on the first substrate; A photosensitive device facing the side of the display substrate; and a light collimating layer located between the display substrate and the photosensitive device, and the light collimating layer is used to collimate the light propagating toward the photosensitive device.
  • the photosensitive device includes an electrode layer on the first substrate and a photosensitive layer covering the electrode layer.
  • the electrode layer includes a first electrode and a second electrode arranged at intervals.
  • the photosensitive layer includes a semiconductor material.
  • the first electrode has a first main electrode and a first sub-electrode extending from the first main electrode.
  • the second electrode has a second main electrode and a second sub-electrode extending from the second main electrode.
  • the first sub-electrodes and the second sub-electrodes are alternately arranged and isolated from each other.
  • the first electrode and the second electrode are comb-shaped electrodes and form an interdigital structure with each other.
  • the photosensitive device further includes a first insulating layer located between the electrode layer and the photosensitive layer.
  • the sensing substrate further includes a protective layer covering the photosensitive device.
  • the sensing substrate further includes a first thin film transistor located between the first substrate and the photosensitive device.
  • the source/drain electrode of the first thin film transistor is electrically connected to one of the first electrode and the second electrode.
  • the sensing substrate further includes a light shielding portion located between the first thin film transistor and the photosensitive device.
  • the orthographic projection of the light shielding portion on the first substrate overlaps the orthographic projection of the active layer of the first thin film transistor on the first substrate.
  • the display substrate includes an OLED display substrate.
  • the display substrate includes: a second substrate; a light emitting device located on a side of the second substrate away from the sensing substrate; an encapsulation layer located on the light emitting device; A polarizing layer on the encapsulation layer; and a third substrate on the polarizing layer.
  • a display device is also provided.
  • the display device includes the display panel as described above.
  • FIG. 1 shows a schematic cross-sectional view of a display panel according to an embodiment of the present disclosure.
  • FIG. 2 shows a schematic cross-sectional view of a photosensitive device according to an embodiment of the present disclosure.
  • Fig. 3 shows a schematic cross-sectional view of a photosensitive device according to an embodiment of the present disclosure.
  • FIG. 4 shows a schematic diagram of a planar structure of an electrode layer according to an embodiment of the present disclosure.
  • FIG. 5 shows a schematic cross-sectional view of the sensing substrate taken along the line A-A in FIG. 4 according to an embodiment of the present disclosure.
  • FIG. 6 shows a schematic cross-sectional view of a display panel according to an embodiment of the present disclosure.
  • the fingerprint identification device in the related art cannot realize full-screen fingerprint identification due to the limitation of manufacturing cost and the like.
  • the photosensitive device for fingerprint recognition occupies a small area in the fingerprint recognition device, it results in a low filling rate (ratio of the photosensitive area to the area of the display panel) and thus low sensitivity.
  • the embodiments of the present disclosure provide a display panel and a display device with a fingerprint recognition function, which can realize full-screen fingerprint recognition and improve fingerprint recognition sensitivity.
  • FIG. 1 shows a schematic cross-sectional view of a display panel according to an embodiment of the present disclosure.
  • the display panel 1 includes: a display substrate 10 for display; and a sensing substrate 20 disposed opposite to the display substrate 10 for sensing fingerprints.
  • the sensing substrate 20 includes a first substrate 201 and a photosensitive device 206 on the side of the first substrate 201 facing the display substrate 10.
  • the photosensitive device 206 is used to detect the light reflected by the finger when the finger touches the display device for fingerprint recognition.
  • the maximum dimension of the photosensitive device 206 in a direction parallel to the sensing substrate 20 ranges from about 50-100 ⁇ m.
  • the display panel 1 further includes a light collimating layer 213 between the display substrate 10 and the photosensitive device 206.
  • the light collimating layer 213 may be used to collimate the light propagating toward the photosensitive device 206, for example, to reduce the divergence angle of the light reflected from the valley ridge of the finger.
  • the light collimating layer 213 may be, for example, an optical fiber layer.
  • FIG. 2 shows a schematic cross-sectional view of a photosensitive device according to an embodiment of the present disclosure.
  • the photosensitive device 206 includes an electrode layer 207 on the first substrate 201 and a photosensitive layer 211 covering the electrode layer 207.
  • the electrode layer 207 includes a first electrode 208 and a second electrode 209 arranged at intervals.
  • one of the first electrode 208 and the second electrode 209 may include a sensing electrode, and the other may include a bias electrode, for example.
  • the bias electrode is used to provide a bias voltage to the photosensitive layer
  • the sensing electrode is used to receive electrical signals, such as electrons, from the photosensitive layer.
  • the thickness range of the electrode layer 207 may be, for example, about 30-50 nm.
  • the photosensitive layer 211 may include a semiconductor material, for example.
  • the material of the photosensitive layer 211 may include, for example, an organic material or an inorganic material.
  • the inorganic material may include amorphous silicon, for example.
  • the sensitive wavelength range of the photosensitive layer 211 may be, for example, about 400-800 nm.
  • the thickness of the photosensitive layer 211 may be in the range of about 450-1000 nm, for example.
  • FIG. 4 shows a schematic diagram of a planar structure of an electrode layer according to an embodiment of the present disclosure.
  • the first electrode 208 has a first main electrode 2081 and a first sub-electrode 2082 extending from the first main electrode 2081.
  • the second electrode 209 has a second main electrode 2091 and a second sub-electrode 2092 extending from the second main electrode 2091.
  • the first sub-electrodes 2082 and the second sub-electrodes 2092 are alternately arranged and isolated from each other.
  • the first electrode 208 and the second electrode 209 may be comb-shaped electrodes and form an interdigital structure with each other, for example.
  • the sensing substrate 20 further includes a first thin film transistor 202 located between the first substrate 201 and the photosensitive device 206.
  • the first thin film transistor 202 includes: a gate 2021 on the first substrate 201; a gate insulating layer 2022 covering the first substrate 201 and the gate 2021; The active layer 2023 on the layer 2022; the source/drain electrodes on the active layer 2023 and the gate insulating layer 2022.
  • the source/drain electrode may include one of the source electrode 2024 and the drain electrode 2025. It should be noted that the structure provided in the same layer as the gate 2021 and the structure provided in the same layer as the source electrode 2024 and the drain electrode 2025 in FIG. 2 are other wirings.
  • the sensing substrate 20 further includes a light shielding part 204 between the first thin film transistor 202 and the photosensitive device 206.
  • the orthographic projection of the light shielding portion 204 on the first substrate 201 overlaps the orthographic projection of the active layer 2023 of the first thin film transistor 202 on the first substrate 201.
  • the light shielding portion 204 may be used to prevent the light used for display and the light used for fingerprint recognition reflected by the fingerprint from irradiating the active layer 2023, so as to protect the switching characteristics of the first thin film transistor 202. Affected by the above light.
  • the material of the light shielding portion 204 may include metal, for example, or may be a resin material that does not transmit light.
  • the sensing substrate 20 further includes a first dielectric layer 203 between the first thin film transistor 202 and the light shielding portion 204, and a second dielectric layer between the light shielding portion 204 and the photosensitive device 206 205.
  • one of the source electrode 2024 and the drain electrode 2025 of the first thin film transistor 202 is electrically connected to one of the first electrode 208 and the second electrode 209, and the source electrode 2024 and the drain electrode The other of 2025 is electrically connected to a signal receiving circuit (not shown), and the other of the first electrode 208 and the second electrode 209 is connected to a bias voltage circuit (not shown) as a bias electrode.
  • the drain electrode 2025 of the first thin film transistor 202 passes through the first via hole (not shown) in the first dielectric layer 203 and the second dielectric layer 205.
  • the second via hole (not shown) in is electrically connected to one of the first electrode 208 and the second electrode 209 (for example, the first electrode 208).
  • the first electrode 208 serves as a sensing electrode
  • the second electrode 209 serves as a bias electrode.
  • the photosensitive layer 211 converts the light incident therein into an electric signal, and the electric signal is transmitted to the first thin film transistor 202 via the first electrode 208. Then, the first thin film transistor 202 transmits the electrical signal to the signal receiving circuit to identify the fingerprint signal.
  • the first electrode 208 may be connected to the drain electrode 2025 of the first thin film transistor 202 by two methods.
  • the material of the first electrode 208 can fill the first via hole in the first dielectric layer 203 and the second via hole in the second dielectric layer 205 to make the first The electrode 208 is directly electrically connected to the drain electrode 2025.
  • FIG. 2 shows that in the first method, the material of the first electrode 208 can fill the first via hole in the first dielectric layer 203 and the second via hole in the second dielectric layer 205 to make the first The electrode 208 is directly electrically connected to the drain electrode 2025.
  • the connecting portion 2041 provided in the same layer as the light shielding portion 205 can be filled in the first dielectric layer 203
  • the first via hole is electrically connected to the drain electrode 2025, so that the first electrode 208 can fill the second via hole in the second dielectric layer 205 and is electrically connected to the drain electrode 2025 via the connection portion 2041.
  • the sensing substrate 20 may further include a protective layer 212 covering the photosensitive device 206.
  • Fig. 5 shows a schematic cross-sectional view of the sensing substrate taken along the line A-A in Fig. 4 according to an embodiment of the present disclosure.
  • the photosensitive device 206 may further include a first insulating layer 210 between the electrode layer 207 and the photosensitive layer 211.
  • the first insulating layer 210 can reduce the dark-state leakage current of the photosensitive device 206.
  • the display substrate may include an OLED display substrate.
  • FIG. 6 shows a schematic cross-sectional view of a display panel according to an embodiment of the present disclosure.
  • the display substrate 10 includes: a second substrate 101; a light emitting device 103 located on the side of the second substrate 101 facing away from the sensing substrate 20; The encapsulation layer 104 on the encapsulation layer 104; the polarizing layer 105 on the encapsulation layer 104; and the third substrate 106 on the polarizing layer 105.
  • the polarizing layer 105 may be used to avoid the influence of ambient light on the light emitting device 103, for example.
  • the light emitting device 103 may emit light for display, and may also emit light for fingerprint recognition.
  • the light emitting device 103 may include an anode 1031, a light emitting layer 1032 on the anode 1031, and a cathode 1033 on the light emitting layer 1032.
  • the cathode 1033 is a common electrode.
  • the display substrate 10 may further include a second thin film transistor 102 located between the second substrate 101 and the light emitting device 103 for driving the light emitting device 103 to emit light.
  • a display device is also provided.
  • the display device includes the display panel 1 as described above.
  • the display device may be, for example, an OLED-based display device.
  • the display panel since the display panel includes a light collimating layer capable of collimating the light reaching the photosensitive device, the amount of light reaching the photosensitive device is increased, so that the sensitivity of fingerprint recognition can be improved.
  • the photosensitive layer in the photosensitive device is provided throughout the entire display panel, full-screen fingerprint recognition can be realized.
  • the sensitivity of fingerprint recognition is further improved.
  • the first electrode and the second electrode in the photosensitive device form an interdigital structure with each other, the sensitivity of fingerprint recognition is further improved.

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Abstract

本公开涉及一种显示面板及显示装置。所述显示面板包括：用于显示的显示基板；与所述显示基板相对设置的用于感测指纹的感测基板，所述感测基板包括第一衬底和位于所述第一衬底朝向所述显示基板一侧的感光器件；以及位于所述显示基板与所述感光器件之间的光准直层，所述光准直层用于准直朝向所述感光器件传播的光。

Description

显示面板及显示装置 技术领域
本公开的实施例涉及显示技术领域，更具体地，涉及一种显示面板及显示装置。
背景技术
屏下光学指纹识别技术符合全面屏手机的发展趋势。该技术能够在显示屏各处实现指纹解锁。
发明内容
本公开的实施例提供了一种显示面板及显示装置。
根据本公开的实施例，提供了一种显示面板。所述显示面板，包括：用于显示的显示基板；与所述显示基板相对设置的用于感测指纹的感测基板，所述感测基板包括第一衬底和位于所述第一衬底朝向所述显示基板一侧的感光器件；以及位于所述显示基板与所述感光器件之间的光准直层，所述光准直层用于准直朝向所述感光器件传播的光。
在本公开的实施例中，所述感光器件包括位于所述第一衬底上的电极层和覆盖所述电极层的光敏层。所述电极层包括间隔设置的第一电极和第二电极。
在本公开的实施例中，所述光敏层包括半导体材料。
在本公开的实施例中，所述第一电极具有第一主电极和从所述第一主电极延伸出的第一子电极。所述第二电极具有第二主电极和从所述第二主电极延伸出的第二子电极。所述第一子电极和所述第二子电极交替设置且彼此隔离。
在本公开的实施例中，所述第一电极和所述第二电极为梳状电极且彼此形成叉指结构。
在本公开的实施例中，所述感光器件还包括位于所述电极层与所述光 敏层之间的第一绝缘层。
在本公开的实施例中，所述感测基板还包括覆盖所述感光器件的保护层。
在本公开的实施例中，所述感测基板还包括位于所述第一衬底与所述感光器件之间的第一薄膜晶体管。所述第一薄膜晶体管的源/漏电极与所述第一电极和所述第二电极中的一者电连接。
在本公开的实施例中，所述感测基板还包括位于所述第一薄膜晶体管与所述感光器件之间的遮光部。所述遮光部在所述第一衬底上的正投影与所述第一薄膜晶体管的有源层在所述第一衬底上的正投影重叠。
在本公开的实施例中，所述显示基板包括OLED显示基板。
在本公开的实施例中，所述显示基板包括：第二衬底；位于所述第二衬底的背离所述感测基板的一侧的发光器件；位于所述发光器件上的封装层；位于所述封装层上的偏光层；以及位于所述偏光层上的第三衬底。
根据本公开的实施例，还提供了一种显示装置。所述显示装置包括如上所述的显示面板。
适应性的进一步的方面和范围从本文中提供的描述变得明显。应当理解，本申请的各个方面可以单独或者与一个或多个其他方面组合实施。还应当理解，本文中的描述和特定实施例旨在仅说明的目的并不旨在限制本申请的范围。
附图说明
本文中描述的附图用于仅对所选择的实施例的说明的目的，并不是所有可能的实施方式，并且不旨在限制本申请的范围，其中：
图1示出了根据本公开的实施例显示面板的横截面示意图。
图2示出了根据本公开的实施例的感光器件的横截面示意图。
图3示出了根据本公开的实施例的感光器件的横截面示意图。
图4示出了根据本公开的实施例的电极层的平面结构示意图。
图5示出了根据本公开的实施例的沿图4中的线A-A截取的感测基板的横截面示意图。
图6示出了根据本公开的实施例的显示面板的横截面示意图。
贯穿这些附图的各个视图，相应的参考编号指示相应的部件或特征。
具体实施方式
首先，需要说明的是，除非上下文中另外明确地指出，否则在本文和所附权利要求中所使用的词语的单数形式包括复数，反之亦然。因而，当提及单数时，通常包括相应术语的复数。相似地，措辞“包含”和“包括”将解释为包含在内而不是独占性地。同样地，术语“包括”和“或”应当解释为包括在内的，除非本文中另有说明。在本文中使用术语“实例”之处，特别是当其位于一组术语之后时，所述“实例”仅仅是示例性的和阐述性的，且不应当被认为是独占性的或广泛性的。
另外，还需要说明的是，当介绍本申请的元素及其实施例时，冠词“一”、“一个”、“该”和“所述”旨在表示存在一个或者多个要素；除非另有说明，“多个”的含义是两个或两个以上；用语“包含”、“包括”、“含有”和“具有”旨在包括性的并且表示可以存在除所列要素之外的另外的要素；术语“第一”、“第二”、“第三”等仅用于描述的目的，而不能理解为指示或暗示相对重要性及形成顺序。
本公开中描绘的流程图仅仅是一个例子。在不脱离本公开精神的情况下，可以存在该流程图或其中描述的步骤的很多变型。例如，所述步骤可以以不同的顺序进行，或者可以添加、删除或者修改步骤。这些变型都被认为是所要求保护的方面的一部分。
现将参照附图更全面地描述示例性的实施例。
相关技术中的指纹识别装置因制造成本等的限制而无法实现全屏指纹识别。另外，由于用于指纹识别的感光器件在指纹识别装置中占据的面积较小，导致低的填充率(感光面积相对于显示面板面积的比率)和由此的 低灵敏度。
本公开的实施例提供了一种具有指纹识别功能的显示面板及显示装置，能够实现全屏指纹识别并提高指纹识别灵敏度。
图1示出了根据本公开的实施例显示面板的横截面示意图。如图1所示，显示面板1包括：用于显示的显示基板10；以及与显示基板10相对设置的用于感测指纹的感测基板20。
在本公开的示例性实施例中，感测基板20包括第一衬底201和位于第一衬底201朝向显示基板10一侧的感光器件206。该感光器件206用于当手指触摸显示装置时检测由手指反射的光以进行指纹识别。
在本公开的示例性实施例中，感光器件206的沿平行于感测基板20的方向上的最大尺寸范围为约50-100μm。
在本公开的示例性实施例中，参考图1，显示面板1还包括位于显示基板10与感光器件206之间的光准直层213。当使用显示面板1进行指纹识别时，该光准直层213可以用于准直朝向感光器件206传播的光，例如，用于缩小从手指的谷脊反射的光的发散角度。
在本公开的示例性实施例中，光准直层213例如可以为光学纤维层。
图2示出了根据本公开的实施例的感光器件的横截面示意图。如图2所示，在本公开的示例性实施例中，感光器件206包括位于第一衬底201上的电极层207和覆盖电极层207的光敏层211。电极层207包括间隔设置的第一电极208和第二电极209。
作为示例，第一电极208和第二电极209中的一者例如可以包括感测电极，而另一者例如可以包括偏置电极。偏置电极用于为光敏层提供偏置电压，感测电极用于接收来自光敏层的电信号，例如电子。
在本公开的示例性实施例中，电极层207的厚度范围例如可以为约30-50nm。
在本公开的示例性实施例中，作为示例，光敏层211例如可以包括半导体材料。在本公开的示例性实施例中，光敏层211的材料例如可以包括 有机材料或无机材料。作为示例，无机材料例如可以包括非晶硅。
在本公开的示例性实施例中，光敏层211的敏感波长范围例如可以为约400-800nm。
在本公开的示例性实施例中，光敏层211的厚度的范围例如可以为约450-1000nm。
图4示出了根据本公开的实施例的电极层的平面结构示意图。如图4所示，在本公开的示例性实施例中，第一电极208具有第一主电极2081和从第一主电极2081延伸出的第一子电极2082。第二电极209具有第二主电极2091和从第二主电极2091延伸出的第二子电极2092。在本公开的示例性实施例中，第一子电极2082和第二子电极2092交替设置且彼此隔离。
在本公开的示例性实施例中，如图4所示，第一电极208和第二电极209例如可以为梳状电极且彼此形成叉指结构。
再次参考图2，在本公开的示例性实施例中，感测基板20还包括位于第一衬底201与感光器件206之间的第一薄膜晶体管202。
在本公开的示例性实施例中，第一薄膜晶体管202包括：位于第一衬底201上的栅极2021；覆盖第一衬底201和栅极2021的栅极绝缘层2022；位于栅极绝缘层2022上的有源层2023；位于有源层2023和栅极绝缘层2022上的源/漏电极。在图2中，例如，源/漏电极可以包括源电极2024和漏电极2025中的一个。应注意，图2中与栅极2021同层设置的结构以及与源电极2024和漏电极2025同层设置的结构为其他布线。
在本公开的示例性实施例中，感测基板20还包括位于第一薄膜晶体管202与感光器件206之间的遮光部204。遮光部204在第一衬底201上的正投影与第一薄膜晶体管202的有源层2023在第一衬底201上的正投影重叠。在本公开的实施例中，遮光部204可以用来阻止用于显示的光和被指纹反射回来的用于指纹识别的光照射到有源层2023，以保护第一薄膜晶体管202的开关特性不受上述光照的影响。
在本公开的示例性实施例中，遮光部204的材料例如可以包括金属， 还可以为不透光的树脂材料。
在本公开的示例性实施例中，感测基板20还包括位于第一薄膜晶体管202与遮光部204之间的第一介质层203以及位于遮光部204与感光器件206之间的第二介质层205。
在本公开的示例性实施例中，第一薄膜晶体管202的源电极2024和漏电极2025中的一者与第一电极208和第二电极209中的一者电连接，源电极2024和漏电极2025中的另一者与信号接收电路电连接(未示出)，第一电极208和第二电极209中的另一者作为偏置电极连接到偏置电压电路(未示出)。例如，如图2所示，在本公开的示例性实施例中，第一薄膜晶体管202的漏电极2025经由第一介质层203中的第一过孔(未示出)和第二介质层205中的第二过孔(未示出)与第一电极208和第二电极209中的一者(例如，第一电极208)电连接。应理解，在该情况下，第一电极208用作感测电极，而第二电极209用作偏置电极。这里，光敏层211将入射到其中的光线转换成电信号，该电信号经第一电极208传输到第一薄膜晶体管202。然后，第一薄膜晶体管202将该电信号传输到信号接收电路以识别指纹信号。
在本公开的示例性实施例中，第一电极208可以通过两种方法连接到第一薄膜晶体管202的漏电极2025。作为示例，如图2所示，在第一种方法中，第一电极208的材料可以填充第一介质层203的第一过孔和第二介质层205中的第二过孔而使第一电极208直接与漏电极2025电连接。作为另一示例，如图3所示，在第二种方法中，在遮光部205的材料是导电材料的情况下，与遮光部205同层设置的连接部2041可以填充第一介质层203中的第一过孔且与漏电极2025电连接，由此，第一电极208可以填充第二介质层205中的第二过孔并经由连接部2041与漏电极2025电连接。
在本公开的示例性实施例中，感测基板20还可以包括覆盖感光器件206的保护层212。
图5示出了根据本公开的实施例的沿图4中的线A-A截取的感测基板 的横截面示意图。如图5所示，在本公开的示例性实施例中，感光器件206还可以包括位于电极层207与光敏层211之间的第一绝缘层210。该第一绝缘层210可以降低感光器件206的暗态漏电流。
在本公开的示例性实施例中，显示基板可以包括OLED显示基板。
接下来，描述OLED显示基板10的具体结构。
图6示出了根据本公开的实施例的显示面板的横截面示意图。如图6所示，在本公开的示例性实施例中，显示基板10包括：第二衬底101；位于第二衬底101的背离感测基板20的一侧的发光器件103；位于发光器件103上的封装层104；位于封装层104上的偏光层105；以及位于偏光层105上的第三衬底106。在本公开的实施例中，偏光层105例如可以用于避免环境光对发光器件103的影响。
在本公开的示例性实施例中，发光器件103可以发出用于显示的光，也可以发出用于指纹识别的光。
在本公开的示例性实施例中，发光器件103可以包括阳极1031、位于阳极1031上的发光层1032、以及位于发光层1032上的阴极1033。作为示例，阴极1033为公共电极。
在本公开的示例性实施例中，显示基板10还可以包括位于第二衬底101与发光器件103之间的第二薄膜晶体管102，用于驱动发光器件103发光。
根据本公开的实施例，还提供了一种显示装置。该显示装置包括如上所述的显示面板1。作为示例，显示装置例如可以为基于OLED的显示装置。
在本公开的实施例中，由于显示面板包括能够使到达感光器件的光准直的光准直层，使得增加了到达感光器件的光的量，从而能够提高指纹识别的灵敏度。另外，由于感光器件中的光敏层是遍及整个显示面板设置的，因此能够实现全屏指纹识别。此外，由于光敏面积增加，还进一步提高了指纹识别的灵敏度。另外，由于感光器件中的第一电极和第二电极彼此形 成叉指结构，更进一步地提高了指纹识别的灵敏度。
以上为了说明和描述的目的提供了实施例的前述描述。其并不旨在是穷举的或者限制本申请。特定实施例的各个元件或特征通常不限于特定的实施例，但是，在合适的情况下，这些元件和特征是可互换的并且可用在所选择的实施例中，即使没有具体示出或描述。同样也可以以许多方式来改变。这种改变不能被认为脱离了本申请，并且所有这些修改都包含在本申请的范围内。

Claims (12)

  1. 一种显示面板，包括：
    用于显示的显示基板；
    与所述显示基板相对设置的用于感测指纹的感测基板，所述感测基板包括第一衬底和位于所述第一衬底朝向所述显示基板一侧的感光器件；以及
    位于所述显示基板与所述感光器件之间的光准直层，所述光准直层用于准直朝向所述感光器件传播的光。
  2. 根据权利要求1所述的显示面板，其中，所述感光器件包括位于所述第一衬底上的电极层和覆盖所述电极层的光敏层，
    其中，所述电极层包括间隔设置的第一电极和第二电极。
  3. 根据权利要求2所述的显示面板，其中，所述光敏层包括半导体材料。
  4. 根据权利要求2所述的显示面板，其中，所述第一电极具有第一主电极和从所述第一主电极延伸出的第一子电极，所述第二电极具有第二主电极和从所述第二主电极延伸出的第二子电极，所述第一子电极和所述第二子电极交替设置且彼此隔离。
  5. 根据权利要求4所述的显示面板，其中，所述第一电极和所述第二电极为梳状电极且彼此形成叉指结构。
  6. 根据权利要求4所述的显示面板，其中，所述感光器件还包括位于所述电极层与所述光敏层之间的第一绝缘层。
  7. 根据权利要求1所述的显示面板，其中，所述感测基板还包括覆盖所述感光器件的保护层。
  8. 根据权利要求1所述的显示面板，其中，所述感测基板还包括位于所述第一衬底与所述感光器件之间的第一薄膜晶体管，
    其中，所述第一薄膜晶体管的源/漏电极与所述第一电极和所述第二电极中的一者电连接。
  9. 根据权利要求8所述的显示面板，其中，所述感测基板还包括位于 所述第一薄膜晶体管与所述感光器件之间的遮光部，
    其中，所述遮光部在所述第一衬底上的正投影与所述第一薄膜晶体管的有源层在所述第一衬底上的正投影重叠。
  10. 根据权利要求1所述的显示面板，其中，所述显示基板包括OLED显示基板。
  11. 根据权利要求10所述的显示面板，其中，所述显示基板包括：
    第二衬底；
    位于所述第二衬底的背离所述感测基板的一侧的发光器件；
    位于所述发光器件上的封装层；
    位于所述封装层上的偏光层；以及
    位于所述偏光层上的第三衬底。
  12. 一种显示装置，包括权利要求1至11中任一项所述的显示面板。
PCT/CN2019/118952 2019-11-15 2019-11-15 显示面板及显示装置 WO2021092950A1 (zh)

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