WO2021079462A1 - Thermoelectric conversion element module and method for producing thermoelectric conversion element module - Google Patents

Thermoelectric conversion element module and method for producing thermoelectric conversion element module Download PDF

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Publication number
WO2021079462A1
WO2021079462A1 PCT/JP2019/041709 JP2019041709W WO2021079462A1 WO 2021079462 A1 WO2021079462 A1 WO 2021079462A1 JP 2019041709 W JP2019041709 W JP 2019041709W WO 2021079462 A1 WO2021079462 A1 WO 2021079462A1
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Prior art keywords
insulating substrate
insulating
type thermoelectric
thermoelectric element
substrate
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PCT/JP2019/041709
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French (fr)
Japanese (ja)
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智 ▲高▼平
公治 黒木
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三菱電機株式会社
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Priority to CN201980101378.1A priority Critical patent/CN114556600B/en
Priority to JP2020519157A priority patent/JP6822609B1/en
Priority to PCT/JP2019/041709 priority patent/WO2021079462A1/en
Publication of WO2021079462A1 publication Critical patent/WO2021079462A1/en

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device

Definitions

  • the present invention relates to a thermoelectric conversion element module and a method for manufacturing a thermoelectric conversion element module.
  • Patent Document 1 discloses a thermoelectric module.
  • the thermoelectric module has first and second ceramic substrates facing each other.
  • the first and second electrodes are bonded to the inner surfaces of the first and second ceramic substrates, respectively.
  • a thermoelectric element is interposed between the first and second electrodes.
  • the thermoelectric element is bonded to the first and second electrodes.
  • thermoelectric conversion element module In the manufacturing process of the thermoelectric conversion element module as in Patent Document 1, voids or cracks may occur in the ceramic substrate. This may create a path that penetrates the ceramic substrate in the thickness direction. A voltage is applied to the thermoelectric conversion element module during actual operation in the market. This can lead to electromigration in the path created by voids or cracks. At this time, the front and back surfaces of the ceramic substrate may be electrically connected, and the electric circuit formed by the thermoelectric element may be electrically connected to the outside via the ceramic substrate. Therefore, the thermoelectric conversion element module may not function.
  • the present invention has been made to solve the above-mentioned problems, and an object of the present invention is a thermoelectric conversion capable of preventing an electric circuit formed by a thermoelectric element from being electrically connected to the outside via an insulating substrate. To obtain a method for manufacturing an element module and a thermoelectric conversion element module.
  • thermoelectric conversion element module is provided between the first insulating substrate, the second insulating substrate provided above the first insulating substrate, and the first insulating substrate and the second insulating substrate.
  • a first electrode provided on the back surface and electrically connecting the upper end side of the n-type thermoelectric element and the upper end side of the p-type thermoelectric element, and an n-type thermoelectric element provided on the upper surface of the first insulating substrate.
  • a first metal layer provided under the insulating substrate, a first insulating layer provided under the first metal layer, a second metal layer provided on the second insulating substrate, and the first A second insulating layer provided on the two metal layers is provided.
  • thermoelectric conversion element module is provided between the first insulating substrate, the second insulating substrate provided above the first insulating substrate, and the first insulating substrate and the second insulating substrate.
  • a first electrode provided on the back surface and electrically connecting the upper end side of the n-type thermoelectric element and the upper end side of the p-type thermoelectric element, and an n-type thermoelectric element provided on the upper surface of the first insulating substrate.
  • a first insulating layer provided under the insulating substrate and a second insulating layer provided on the second insulating substrate are provided, and the first insulating substrate and the second insulating substrate are ceramic substrates. The first insulating layer and the second insulating layer are not fired.
  • the method for manufacturing a thermoelectric conversion element module according to the present invention is to insert an n-type thermoelectric element and a p-type thermoelectric element between the first insulating substrate and the second insulating substrate provided above the first insulating substrate.
  • the first electrode provided on the back surface of the second insulating substrate facing the first insulating substrate electrically connects the upper end side of the n-type thermoelectric element and the upper end side of the p-type thermoelectric element.
  • the second electrode provided on the upper surface of the first insulating substrate and the lower end side of the n-type thermoelectric element are electrically connected to each other, and the third electrode provided on the upper surface of the first insulating substrate is electrically connected.
  • thermoelectric element And the lower end side of the p-type thermoelectric element are electrically connected, and after the first insulating substrate and the second insulating substrate are fired, a first insulating layer is provided under the first insulating substrate. A second insulating layer is provided on the second insulating substrate.
  • thermoelectric conversion element module In the method for manufacturing a thermoelectric conversion element module and a thermoelectric conversion element module according to the present invention, a first insulating layer and a second insulating layer are provided below the first insulating substrate and above the second insulating substrate, respectively.
  • the first insulating layer and the second insulating layer can prevent the electric circuit formed by the thermoelectric element from being electrically connected to the outside via the insulating substrate.
  • thermoelectric conversion element module which concerns on Embodiment 1.
  • FIG. It is sectional drawing which shows the state which mounted the semiconductor device on the thermoelectric conversion element module which concerns on Embodiment 1.
  • FIG. It is sectional drawing of the thermoelectric conversion element module which concerns on Embodiment 2.
  • FIG. It is sectional drawing of the thermoelectric conversion element module which concerns on Embodiment 3.
  • thermoelectric conversion element module and the method for manufacturing the thermoelectric conversion element module according to the embodiment of the present invention will be described with reference to the drawings.
  • the same or corresponding components may be designated by the same reference numerals and the description may be omitted.
  • FIG. 1 is a cross-sectional view of the thermoelectric conversion element module 100 according to the first embodiment.
  • the thermoelectric conversion element module 100 has a first insulating substrate 10 and a second insulating substrate 20 provided above the first insulating substrate 10.
  • the first insulating substrate 10 and the second insulating substrate 20 face each other.
  • the first insulating substrate 10 and the second insulating substrate 20 are ceramic substrates formed by, for example, firing.
  • the first insulating substrate 10 and the second insulating substrate 20 are formed of, for example, a green sheet.
  • the first insulating substrate 10 and the second insulating substrate 20 may be formed from a plurality of laminated green sheets.
  • the first insulating substrate 10 and the second insulating substrate 20 are formed of, for example, an aluminum oxide-based sintered body or an aluminum nitride-based sintered body.
  • the thickness of the first insulating substrate 10 and the second insulating substrate 20 is, for example, 0.15 to 0.25 mm.
  • a plurality of n-type thermoelectric elements 31a to 31c and a plurality of p-type thermoelectric elements 32a to 32c are provided between the first insulating substrate 10 and the second insulating substrate 20.
  • the first insulating substrate 10 and the second insulating substrate 20 sandwich the n-type thermoelectric elements 31a to 31c and the p-type thermoelectric elements 32a to 32c.
  • the first insulating substrate 10 and the second insulating substrate 20 are support members for the n-type thermoelectric elements 31a to 31c and the p-type thermoelectric elements 32a to 32c.
  • Each of the plurality of n-type thermoelectric elements 31a to 31c and the plurality of p-type thermoelectric elements 32a to 32c is erected perpendicularly to the first insulating substrate 10 and the second insulating substrate 20.
  • the plurality of n-type thermoelectric elements 31a to 31c and the plurality of p-type thermoelectric elements 32a to 32c are arranged alternately.
  • the number of the n-type thermoelectric elements 31a to 31c and the p-type thermoelectric elements 32a to 32c provided in the thermoelectric conversion element module 100 may be one or more, respectively.
  • Electrodes 41a to 41d are provided on the upper surface of the first insulating substrate 10. Further, electrodes 42a to 42c are provided on the back surface of the second insulating substrate 20, which is a surface facing the first insulating substrate 10. The n-type thermoelectric elements 31a to 31c and the p-type thermoelectric elements 32a to 32c are provided between the electrodes 41a to 41d and the electrodes 42a to 42c.
  • the electrode 41a is electrically connected to the lower end side of the n-type thermoelectric element 31a.
  • the electrode 42a electrically connects the upper end side of the n-type thermoelectric element 31a and the upper end side of the p-type thermoelectric element 32a.
  • the electrode 41b electrically connects the lower end side of the p-type thermoelectric element 32a and the lower end side of the n-type thermoelectric element 31b.
  • the electrode 42b electrically connects the upper end side of the n-type thermoelectric element 31b and the upper end side of the p-type thermoelectric element 32b.
  • the electrode 41c electrically connects the lower end side of the p-type thermoelectric element 32b and the lower end side of the n-type thermoelectric element 31c.
  • the electrode 42c electrically connects the upper end side of the n-type thermoelectric element 31c and the upper end side of the p-type thermoelectric element 32c.
  • the electrode 41d is electrically connected to the lower end side of the p-type thermoelectric element 32c.
  • the electrodes 41a to 41d and the electrodes 42a to 42c alternately connect the n-type thermoelectric elements 31a to 31c and the p-type thermoelectric elements 32a to 32c in series. As a result, the electrodes 41a to 41d, the electrodes 42a to 42c, the n-type thermoelectric elements 31a to 31c, and the p-type thermoelectric elements 32a to 32c form an electric circuit.
  • thermoelectric elements 31a to 31c and the p-type thermoelectric elements 32a to 32c, and the electrodes 41a to 41d and the electrodes 42a to 42c are joined by, for example, solder.
  • a first insulating layer 12 is provided under the first insulating substrate 10.
  • a second insulating layer 22 is provided on the second insulating substrate 20.
  • the first insulating layer 12 and the second insulating layer 22 are formed of aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, silicon oxynitride, titanium nitride, or a non-conductive organic material.
  • the first insulating layer 12 and the second insulating layer 22 may be formed from an insulator such as an aluminum oxide sintered body or an aluminum nitride material sintered body.
  • a metal layer 14 is provided under the first insulating layer 12. Further, a metal layer 24 is provided on the second insulating layer 22.
  • the outermost layers of the metal layers 14 and 24 are formed of gold, for example.
  • the metal layers 14 and 24 are used when solder-bonding members arranged above or below the thermoelectric conversion element module 100. In addition, you may use resin bonding instead of solder bonding. In this case, the metal layers 14 and 24 may not be provided.
  • thermoelectric conversion element module 100 First, the first insulating substrate 10 and the second insulating substrate 20 are fired. After that, the first insulating layer 12 is provided on the surface opposite to the upper surface of the first insulating substrate 10. Further, the second insulating layer 22 is provided on the surface opposite to the back surface of the second insulating substrate 20.
  • the first insulating layer 12 is formed by, for example, firing a green sheet laminate to form the first insulating substrate 10, and then sputtering or vapor-depositing the first insulating substrate 10.
  • the second insulating layer 22 is formed by, for example, firing a green sheet laminate to form a second insulating substrate 20, and then sputtering or vapor-depositing the second insulating substrate 20. Therefore, the first insulating layer 12 and the second insulating layer 22 are not fired.
  • the thickness of the first insulating layer 12 and the second insulating layer 22 may be any general thickness that can be formed by sputtering or vapor deposition.
  • the metal layer 14 is formed on the surface of the first insulating layer 12 opposite to the first insulating substrate 10. Further, the metal layer 24 is formed on the surface of the second insulating layer 22 opposite to the second insulating substrate 20.
  • an n-type thermoelectric element and a p-type thermoelectric element are provided between the first insulating substrate 10 and the second insulating substrate 20.
  • the electrode 41a and the lower end side of the n-type thermoelectric element 31a are electrically connected.
  • the electrode 42a electrically connects the upper end side of the n-type thermoelectric element 31a and the upper end side of the p-type thermoelectric element 32a.
  • the electrode 41b electrically connects the lower end side of the p-type thermoelectric element 32a and the lower end side of the n-type thermoelectric element 31b.
  • the electrode 42b electrically connects the upper end side of the n-type thermoelectric element 31b and the upper end side of the p-type thermoelectric element 32b.
  • the electrode 41c electrically connects the lower end side of the p-type thermoelectric element 32b and the lower end side of the n-type thermoelectric element 31c.
  • the electrode 42c electrically connects the upper end side of the n-type thermoelectric element 31c and the upper end side of the p-type thermoelectric element 32c.
  • the electrode 41d and the lower end side of the p-type thermoelectric element 32c are electrically connected.
  • FIG. 2 is a cross-sectional view showing a state in which the semiconductor device 50 is mounted on the thermoelectric conversion element module 100 according to the first embodiment.
  • the semiconductor device 50 includes a substrate 51 and a semiconductor chip 52 provided on the upper surface of the substrate 51.
  • the semiconductor device 50 is provided on the thermoelectric conversion element module 100 via the metal block 60.
  • the metal block 60 is joined to the metal layer 24 with, for example, solder.
  • the metal block 60 may not be provided.
  • a power supply 70 is connected between the electrodes 41a and 41d. As a result, a closed circuit of a plurality of thermoelectric elements is formed. In the closed circuit, a direct current flows in the direction indicated by the arrow in FIG. As a result, in each of the n-type thermoelectric elements 31a to 31c and the p-type thermoelectric elements 32a to 32c, the carrier moves in the direction from the second insulating substrate 20 to the first insulating substrate 10. As the carrier moves, heat is absorbed from the second insulating substrate 20 and dissipated to the first insulating substrate 10. Therefore, the semiconductor device 50 can be cooled. Further, the semiconductor device 50 can be heated by passing an electric current in the opposite direction.
  • thermoelectric conversion element module 100 is used as a cooling or heating module by utilizing the Seebeck effect or the Peltier effect.
  • thermoelectric conversion element module may not function.
  • thermoelectric conversion element modules that may cause defects in advance.
  • the first insulating layer 12 is provided on the surface of the first insulating substrate 10 facing the surface on which the electrodes 41a to 41d are provided.
  • the second insulating layer 22 is provided on the surface of the second insulating substrate 20 facing the surface on which the electrodes 42a to 42c are provided. Therefore, even when a path penetrating in the thickness direction is formed in the first insulating substrate 10 or the second insulating substrate 20, it is possible to prevent the electric circuit formed by the thermoelectric element from being electrically connected to the outside. .. Therefore, the function of the thermoelectric conversion element module 100 can be surely realized in a state where the thermoelectric conversion element module 100 is mounted on the product and is in operation in the market.
  • the first insulating layer 12 and the second insulating layer 22 are formed after the first insulating substrate 10 and the second insulating substrate 20 are fired. Therefore, the first insulating layer 12 and the second insulating layer 22 are not fired. In the first insulating layer 12 and the second insulating layer 22, the occurrence of voids or cracks can be suppressed as compared with the fired first insulating substrate 10 and the second insulating substrate 20.
  • voids or cracks do not occur in the insulating layer formed by sputtering or vapor deposition. Therefore, by forming the first insulating layer 12 and the second insulating layer 22 by sputtering or vapor deposition, the occurrence of voids or cracks can be suppressed.
  • the first insulating layer 12 and the second insulating layer 22 can suppress the occurrence of voids or cracks as compared with the first insulating substrate 10 or the second insulating substrate 20, the first insulating substrate 10 or the second insulating substrate 20 It may be formed from the same material as.
  • the first insulating layer 12 and the second insulating layer 22 and the first insulating substrate 10 and the second insulating substrate 20 may be formed of the same material having high thermal conductivity. Thereby, the temperature control function of the thermoelectric conversion element module 100 can be improved.
  • first insulating layer 12 may be formed of a material that is less likely to generate voids or cracks than the first insulating substrate 10.
  • second insulating layer 22 may be formed of a material that is less likely to generate voids or cracks than the second insulating substrate 20.
  • the first insulating layer 12 and the second insulating layer 22 are formed after the first insulating substrate 10 and the second insulating substrate 20 are fired. Therefore, the firing temperatures of the first insulating layer 12 and the second insulating layer 22 are not limited by the firing temperatures of the first insulating substrate 10 and the second insulating substrate 20.
  • the firing temperature of the first insulating layer 12 may be equal to or lower than the firing temperature of the first insulating substrate 10.
  • the firing temperature of the second insulating layer 22 may be equal to or lower than the firing temperature of the second insulating substrate 20.
  • the degree of freedom of the materials of the first insulating layer 12 and the second insulating layer 22 can be improved.
  • thermoelectric conversion element module and the method for manufacturing the thermoelectric conversion element module according to the following embodiments. Since the thermoelectric conversion element module and the method for manufacturing the thermoelectric conversion element module according to the following embodiments have much in common with the first embodiment, the differences from the first embodiment will be mainly described.
  • FIG. 3 is a cross-sectional view of the thermoelectric conversion element module 200 according to the second embodiment.
  • the thermoelectric conversion element module 200 includes a first insulating substrate 210a and a second insulating substrate 220a. Between the first insulating substrate 210a and the second insulating substrate 220a, as in the first embodiment, electrodes 41a to 41d, electrodes 42a to 42c, n-type thermoelectric elements 31a to 31c, and p-type thermoelectric elements 32a to 32c are used. An electric circuit is formed.
  • a first insulating layer 212a is provided under the first insulating substrate 210a.
  • a third insulating substrate 210b is provided below the first insulating layer 212a.
  • a third insulating layer 212b is provided below the third insulating substrate 210b.
  • a metal layer 14 is provided under the third insulating layer 212b.
  • a second insulating layer 222a is provided on the second insulating substrate 220a.
  • a fourth insulating substrate 220b is provided on the second insulating layer 222a.
  • a fourth insulating layer 222b is provided on the fourth insulating substrate 220b.
  • a metal layer 24 is provided on the fourth insulating layer 222b.
  • a plurality of insulating substrates are laminated. Further, an insulating layer is provided on the surface of each insulating substrate opposite to the thermoelectric element.
  • the first insulating substrate 210a, the second insulating substrate 220a, the third insulating substrate 210b, and the fourth insulating substrate 220b may each be a single green sheet. Further, the first insulating substrate 210a, the second insulating substrate 220a, the third insulating substrate 210b, and the fourth insulating substrate 220b may each be a green sheet laminate. Further, in the present embodiment, the insulating substrates are laminated in two layers, but may be laminated in three or more layers.
  • FIG. 4 is a cross-sectional view of the thermoelectric conversion element module 300 according to the third embodiment.
  • the first metal layer 311 is provided under the first insulating substrate 10.
  • a first insulating layer 12 is provided under the first metal layer 311.
  • the second metal layer 321 is provided on the second insulating substrate 20.
  • a second insulating layer 22 is provided on the second metal layer 321.
  • Other configurations are the same as those in the first embodiment.
  • the first insulating substrate 10 and the second insulating substrate 20 may be metallized.
  • the first metal layer 311 and the second metal layer 321 of the present embodiment may be formed of, for example, gold or nickel. Further, the first metal layer 311 and the second metal layer 321 may each be formed from a plurality of layers. The plurality of layers include, for example, a layer formed of nickel and a layer formed of gold.
  • the insulating substrate may be covered with a metal layer.
  • the metal component of the first layer from the insulating substrate among the metal layers may invade the voids or cracks.
  • the metal components of the first metal layer 311 and the second metal layer 321 may invade the defects of the first insulating substrate 10 and the second insulating substrate 20, respectively. Therefore, in the present embodiment, as compared with the first embodiment, the front and back surfaces of the insulating substrate are more likely to be electrically connected by electromigration.
  • the electric circuit formed by the thermoelectric element by the first insulating layer 12 provided between the first metal layer 311 and the metal layer 14 forms the first insulating substrate 10. It is possible to suppress the electrical connection with the outside through the device. Further, the electric circuit formed by the thermoelectric element is electrically connected to the outside via the second insulating substrate 20 by the second insulating layer 22 provided between the second metal layer 321 and the metal layer 24. Can be suppressed.
  • thermoelectric conversion element module 210a first insulating substrate, 210b first 3 Insulation Substrate, 212a 1st Insulation Layer, 212b 3rd Insulation Layer, 220a 2nd Insulation Substrate, 220b 4th Insulation Substrate, 222a 2nd Insulation Layer, 222b 4th Insulation Layer, 300 Thermoelectric Conversion Element Module, 311 First Metal Layer, 321 second metal layer

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Abstract

A thermoelectric conversion element module according to the present invention is provided with: a first insulating substrate; a second insulating substrate that is provided above the first insulating substrate; an n-type thermoelectric element that is provided between the first insulating substrate and the second insulating substrate; a p-type thermoelectric element that is provided between the first insulating substrate and the second insulating substrate; a first electrode that is provided on the back surface of the second insulating substrate, while electrically connecting the top edge of the n-type thermoelectric element and the top edge of the p-type thermoelectric element to each other, said back surface facing the first insulating substrate; a second electrode that is provided on the upper surface of the first insulating substrate, while being electrically connected to the bottom edge of the n-type thermoelectric element; a third electrode that is provided on the upper surface of the first insulating substrate, while being electrically connected to the bottom edge of the p-type thermoelectric element; a first metal layer that is provided beneath the first insulating substrate; a first insulating layer that is provided beneath the first metal layer; a second metal layer that is provided on top of the second insulating substrate; and a second insulating layer that is provided on top of the second metal layer.

Description

熱電変換素子モジュールおよび熱電変換素子モジュールの製造方法Thermoelectric conversion element module and manufacturing method of thermoelectric conversion element module
　この発明は、熱電変換素子モジュールおよび熱電変換素子モジュールの製造方法に関する。 The present invention relates to a thermoelectric conversion element module and a method for manufacturing a thermoelectric conversion element module.
　特許文献１には熱電モジュールが開示されている。熱電モジュールは、相対する第１及び第２のセラミック基板を有する。第１及び第２のセラミック基板の各々の内側面には、第１及び第２の電極が接合される。第１及び第２の電極間には、熱電素子が介在する。熱電素子は、第１及び第２の電極に接合されている。 Patent Document 1 discloses a thermoelectric module. The thermoelectric module has first and second ceramic substrates facing each other. The first and second electrodes are bonded to the inner surfaces of the first and second ceramic substrates, respectively. A thermoelectric element is interposed between the first and second electrodes. The thermoelectric element is bonded to the first and second electrodes.
日本特開２０１２－４４１３３号公報Japanese Patent Application Laid-Open No. 2012-44133
　特許文献１のような熱電変換素子モジュールの製造過程において、セラミック基板にボイドまたはクラックが発生することがある。これにより、セラミック基板を厚さ方向で貫通する経路ができる場合がある。熱電変換素子モジュールには、市場で実稼働する際に、電圧が印加される。これにより、ボイドまたはクラックにより生じた経路でエレクトロマイグレーションが発生するおそれがある。このとき、セラミック基板の表裏間が導通し、熱電素子によって形成される電気回路がセラミック基板を介して外部と電気的に接続されるおそれがある。従って、熱電変換素子モジュールが機能を果たせなくなる可能性がある。 In the manufacturing process of the thermoelectric conversion element module as in Patent Document 1, voids or cracks may occur in the ceramic substrate. This may create a path that penetrates the ceramic substrate in the thickness direction. A voltage is applied to the thermoelectric conversion element module during actual operation in the market. This can lead to electromigration in the path created by voids or cracks. At this time, the front and back surfaces of the ceramic substrate may be electrically connected, and the electric circuit formed by the thermoelectric element may be electrically connected to the outside via the ceramic substrate. Therefore, the thermoelectric conversion element module may not function.
　本発明は上述の問題を解決するためになされたものであり、その目的は、熱電素子によって形成される電気回路が、絶縁基板を介して外部と電気的に接続されることを防止できる熱電変換素子モジュールおよび熱電変換素子モジュールの製造方法を得ることである。 The present invention has been made to solve the above-mentioned problems, and an object of the present invention is a thermoelectric conversion capable of preventing an electric circuit formed by a thermoelectric element from being electrically connected to the outside via an insulating substrate. To obtain a method for manufacturing an element module and a thermoelectric conversion element module.
　本願の発明に係る熱電変換素子モジュールは、第１絶縁基板と、該第１絶縁基板の上方に設けられた第２絶縁基板と、該第１絶縁基板と該第２絶縁基板との間に設けられたｎ型熱電素子と、該第１絶縁基板と該第２絶縁基板との間に設けられたｐ型熱電素子と、該第２絶縁基板のうち該第１絶縁基板と対向する面である裏面に設けられ、該ｎ型熱電素子の上端側と該ｐ型熱電素子の上端側とを電気的に接続する第１電極と、該第１絶縁基板の上面に設けられ、該ｎ型熱電素子の下端側と電気的に接続された第２電極と、該第１絶縁基板の該上面に設けられ、該ｐ型熱電素子の下端側と電気的に接続された第３電極と、該第１絶縁基板の下に設けられた第１金属層と、該第１金属層の下に設けられた第１絶縁層と、該第２絶縁基板の上に設けられた第２金属層と、該第２金属層の上に設けられた第２絶縁層と、を備える。 The thermoelectric conversion element module according to the present invention is provided between the first insulating substrate, the second insulating substrate provided above the first insulating substrate, and the first insulating substrate and the second insulating substrate. The n-type thermoelectric element, the p-type thermoelectric element provided between the first insulating substrate and the second insulating substrate, and the surface of the second insulating substrate facing the first insulating substrate. A first electrode provided on the back surface and electrically connecting the upper end side of the n-type thermoelectric element and the upper end side of the p-type thermoelectric element, and an n-type thermoelectric element provided on the upper surface of the first insulating substrate. A second electrode electrically connected to the lower end side of the first insulating substrate, a third electrode provided on the upper surface of the first insulating substrate and electrically connected to the lower end side of the p-type thermoelectric element, and the first electrode. A first metal layer provided under the insulating substrate, a first insulating layer provided under the first metal layer, a second metal layer provided on the second insulating substrate, and the first A second insulating layer provided on the two metal layers is provided.
　本願の発明に係る熱電変換素子モジュールは、第１絶縁基板と、該第１絶縁基板の上方に設けられた第２絶縁基板と、該第１絶縁基板と該第２絶縁基板との間に設けられたｎ型熱電素子と、該第１絶縁基板と該第２絶縁基板との間に設けられたｐ型熱電素子と、該第２絶縁基板のうち該第１絶縁基板と対向する面である裏面に設けられ、該ｎ型熱電素子の上端側と該ｐ型熱電素子の上端側とを電気的に接続する第１電極と、該第１絶縁基板の上面に設けられ、該ｎ型熱電素子の下端側と電気的に接続された第２電極と、該第１絶縁基板の該上面に設けられ、該ｐ型熱電素子の下端側と電気的に接続された第３電極と、該第１絶縁基板の下に設けられた第１絶縁層と、該第２絶縁基板の上に設けられた第２絶縁層と、を備え、該第１絶縁基板と該第２絶縁基板はセラミック基板であり、該第１絶縁層と該第２絶縁層は不焼成である。 The thermoelectric conversion element module according to the present invention is provided between the first insulating substrate, the second insulating substrate provided above the first insulating substrate, and the first insulating substrate and the second insulating substrate. The n-type thermoelectric element, the p-type thermoelectric element provided between the first insulating substrate and the second insulating substrate, and the surface of the second insulating substrate facing the first insulating substrate. A first electrode provided on the back surface and electrically connecting the upper end side of the n-type thermoelectric element and the upper end side of the p-type thermoelectric element, and an n-type thermoelectric element provided on the upper surface of the first insulating substrate. A second electrode electrically connected to the lower end side of the first insulating substrate, a third electrode provided on the upper surface of the first insulating substrate and electrically connected to the lower end side of the p-type thermoelectric element, and the first electrode. A first insulating layer provided under the insulating substrate and a second insulating layer provided on the second insulating substrate are provided, and the first insulating substrate and the second insulating substrate are ceramic substrates. The first insulating layer and the second insulating layer are not fired.
　本願の発明に係る熱電変換素子モジュールの製造方法は、第１絶縁基板と該第１絶縁基板の上方に設けられた該第２絶縁基板との間にｎ型熱電素子とｐ型熱電素子とを設け、該第２絶縁基板のうち該第１絶縁基板と対向する面である裏面に設けられた第１電極で該ｎ型熱電素子の上端側と該ｐ型熱電素子の上端側とを電気的に接続し、該第１絶縁基板の上面に設けられた第２電極と該ｎ型熱電素子の下端側とを電気的に接続し、該第１絶縁基板の該上面に設けられた第３電極と該ｐ型熱電素子の下端側とを電気的に接続し、該第１絶縁基板と該第２絶縁基板とを焼成した後に、該第１絶縁基板の下に第１絶縁層を設け、該第２絶縁基板の上に第２絶縁層を設ける。 The method for manufacturing a thermoelectric conversion element module according to the present invention is to insert an n-type thermoelectric element and a p-type thermoelectric element between the first insulating substrate and the second insulating substrate provided above the first insulating substrate. The first electrode provided on the back surface of the second insulating substrate facing the first insulating substrate electrically connects the upper end side of the n-type thermoelectric element and the upper end side of the p-type thermoelectric element. The second electrode provided on the upper surface of the first insulating substrate and the lower end side of the n-type thermoelectric element are electrically connected to each other, and the third electrode provided on the upper surface of the first insulating substrate is electrically connected. And the lower end side of the p-type thermoelectric element are electrically connected, and after the first insulating substrate and the second insulating substrate are fired, a first insulating layer is provided under the first insulating substrate. A second insulating layer is provided on the second insulating substrate.
　本願の発明に係る熱電変換素子モジュールおよび熱電変換素子モジュールの製造方法では、第１絶縁基板の下および第２絶縁基板の上に第１絶縁層と第２絶縁層がそれぞれ設けられる。第１絶縁層と第２絶縁層により、熱電素子によって形成される電気回路が、絶縁基板を介して外部と電気的に接続されることを防止できる。 In the method for manufacturing a thermoelectric conversion element module and a thermoelectric conversion element module according to the present invention, a first insulating layer and a second insulating layer are provided below the first insulating substrate and above the second insulating substrate, respectively. The first insulating layer and the second insulating layer can prevent the electric circuit formed by the thermoelectric element from being electrically connected to the outside via the insulating substrate.
実施の形態１に係る熱電変換素子モジュールの断面図である。It is sectional drawing of the thermoelectric conversion element module which concerns on Embodiment 1. FIG. 実施の形態１に係る熱電変換素子モジュールに半導体装置を搭載した状態を示す断面図である。It is sectional drawing which shows the state which mounted the semiconductor device on the thermoelectric conversion element module which concerns on Embodiment 1. FIG. 実施の形態２に係る熱電変換素子モジュールの断面図である。It is sectional drawing of the thermoelectric conversion element module which concerns on Embodiment 2. FIG. 実施の形態３に係る熱電変換素子モジュールの断面図である。It is sectional drawing of the thermoelectric conversion element module which concerns on Embodiment 3. FIG.
　本発明の実施の形態に係る熱電変換素子モジュールおよび熱電変換素子モジュールの製造方法について図面を参照して説明する。同じ又は対応する構成要素には同じ符号を付し、説明の繰り返しを省略する場合がある。 The thermoelectric conversion element module and the method for manufacturing the thermoelectric conversion element module according to the embodiment of the present invention will be described with reference to the drawings. The same or corresponding components may be designated by the same reference numerals and the description may be omitted.
実施の形態１．
　図１は、実施の形態１に係る熱電変換素子モジュール１００の断面図である。熱電変換素子モジュール１００は、第１絶縁基板１０と、第１絶縁基板１０の上方に設けられた第２絶縁基板２０とを有する。第１絶縁基板１０と第２絶縁基板２０は対向する。 Embodiment 1.
FIG. 1 is a cross-sectional view of the thermoelectric conversion element module 100 according to the first embodiment. The thermoelectric conversion element module 100 has a first insulating substrate 10 and a second insulating substrate 20 provided above the first insulating substrate 10. The first insulating substrate 10 and the second insulating substrate 20 face each other.
　第１絶縁基板１０および第２絶縁基板２０は、例えば焼成により形成されたセラミック基板である。第１絶縁基板１０と第２絶縁基板２０は、例えばグリーンシートから形成される。第１絶縁基板１０と第２絶縁基板２０は、それぞれ積層した複数のグリーンシートから形成されても良い。第１絶縁基板１０および第２絶縁基板２０は、例えば酸化アルミニウム質焼結体または窒化アルミニウム質焼結体で形成される。第１絶縁基板１０および第２絶縁基板２０の厚さは、例えば０．１５～０．２５ｍｍである。 The first insulating substrate 10 and the second insulating substrate 20 are ceramic substrates formed by, for example, firing. The first insulating substrate 10 and the second insulating substrate 20 are formed of, for example, a green sheet. The first insulating substrate 10 and the second insulating substrate 20 may be formed from a plurality of laminated green sheets. The first insulating substrate 10 and the second insulating substrate 20 are formed of, for example, an aluminum oxide-based sintered body or an aluminum nitride-based sintered body. The thickness of the first insulating substrate 10 and the second insulating substrate 20 is, for example, 0.15 to 0.25 mm.
　第１絶縁基板１０と第２絶縁基板２０との間には、複数のｎ型熱電素子３１ａ～３１ｃと複数のｐ型熱電素子３２ａ～３２ｃが設けられる。第１絶縁基板１０と第２絶縁基板２０は、ｎ型熱電素子３１ａ～３１ｃとｐ型熱電素子３２ａ～３２ｃを挟持している。第１絶縁基板１０と第２絶縁基板２０は、ｎ型熱電素子３１ａ～３１ｃとｐ型熱電素子３２ａ～３２ｃの支持部材である。 A plurality of n-type thermoelectric elements 31a to 31c and a plurality of p-type thermoelectric elements 32a to 32c are provided between the first insulating substrate 10 and the second insulating substrate 20. The first insulating substrate 10 and the second insulating substrate 20 sandwich the n-type thermoelectric elements 31a to 31c and the p-type thermoelectric elements 32a to 32c. The first insulating substrate 10 and the second insulating substrate 20 are support members for the n-type thermoelectric elements 31a to 31c and the p-type thermoelectric elements 32a to 32c.
　複数のｎ型熱電素子３１ａ～３１ｃと複数のｐ型熱電素子３２ａ～３２ｃの各々は、第１絶縁基板１０および第２絶縁基板２０と垂直に立設される。複数のｎ型熱電素子３１ａ～３１ｃと複数のｐ型熱電素子３２ａ～３２ｃは交互に並ぶ。熱電変換素子モジュール１００に設けられるｎ型熱電素子３１ａ～３１ｃとｐ型熱電素子３２ａ～３２ｃの数は、それぞれ１つ以上であれば良い。 Each of the plurality of n-type thermoelectric elements 31a to 31c and the plurality of p-type thermoelectric elements 32a to 32c is erected perpendicularly to the first insulating substrate 10 and the second insulating substrate 20. The plurality of n-type thermoelectric elements 31a to 31c and the plurality of p-type thermoelectric elements 32a to 32c are arranged alternately. The number of the n-type thermoelectric elements 31a to 31c and the p-type thermoelectric elements 32a to 32c provided in the thermoelectric conversion element module 100 may be one or more, respectively.
　第１絶縁基板１０の上面には、電極４１ａ～４１ｄが設けられる。また、第２絶縁基板２０のうち第１絶縁基板１０と対向する面である裏面には、電極４２ａ～４２ｃが設けられる。ｎ型熱電素子３１ａ～３１ｃとｐ型熱電素子３２ａ～３２ｃは、電極４１ａ～４１ｄと電極４２ａ～４２ｃとの間に設けられる。 Electrodes 41a to 41d are provided on the upper surface of the first insulating substrate 10. Further, electrodes 42a to 42c are provided on the back surface of the second insulating substrate 20, which is a surface facing the first insulating substrate 10. The n-type thermoelectric elements 31a to 31c and the p-type thermoelectric elements 32a to 32c are provided between the electrodes 41a to 41d and the electrodes 42a to 42c.
　電極４１ａは、ｎ型熱電素子３１ａの下端側と電気的に接続される。電極４２ａは、ｎ型熱電素子３１ａの上端側とｐ型熱電素子３２ａの上端側とを電気的に接続する。電極４１ｂは、ｐ型熱電素子３２ａの下端側とｎ型熱電素子３１ｂの下端側とを電気的に接続する。電極４２ｂは、ｎ型熱電素子３１ｂの上端側とｐ型熱電素子３２ｂの上端側とを電気的に接続する。電極４１ｃは、ｐ型熱電素子３２ｂの下端側とｎ型熱電素子３１ｃの下端側とを電気的に接続する。電極４２ｃは、ｎ型熱電素子３１ｃの上端側とｐ型熱電素子３２ｃの上端側とを電気的に接続する。電極４１ｄは、ｐ型熱電素子３２ｃの下端側と電気的に接続される。 The electrode 41a is electrically connected to the lower end side of the n-type thermoelectric element 31a. The electrode 42a electrically connects the upper end side of the n-type thermoelectric element 31a and the upper end side of the p-type thermoelectric element 32a. The electrode 41b electrically connects the lower end side of the p-type thermoelectric element 32a and the lower end side of the n-type thermoelectric element 31b. The electrode 42b electrically connects the upper end side of the n-type thermoelectric element 31b and the upper end side of the p-type thermoelectric element 32b. The electrode 41c electrically connects the lower end side of the p-type thermoelectric element 32b and the lower end side of the n-type thermoelectric element 31c. The electrode 42c electrically connects the upper end side of the n-type thermoelectric element 31c and the upper end side of the p-type thermoelectric element 32c. The electrode 41d is electrically connected to the lower end side of the p-type thermoelectric element 32c.
　電極４１ａ～４１ｄと電極４２ａ～４２ｃは、ｎ型熱電素子３１ａ～３１ｃとｐ型熱電素子３２ａ～３２ｃとを交互に直列に接続する。これにより、電極４１ａ～４１ｄ、電極４２ａ～４２ｃ、ｎ型熱電素子３１ａ～３１ｃおよびｐ型熱電素子３２ａ～３２ｃは電気回路を形成する。 The electrodes 41a to 41d and the electrodes 42a to 42c alternately connect the n-type thermoelectric elements 31a to 31c and the p-type thermoelectric elements 32a to 32c in series. As a result, the electrodes 41a to 41d, the electrodes 42a to 42c, the n-type thermoelectric elements 31a to 31c, and the p-type thermoelectric elements 32a to 32c form an electric circuit.
　ｎ型熱電素子３１ａ～３１ｃおよびｐ型熱電素子３２ａ～３２ｃと、電極４１ａ～４１ｄおよび電極４２ａ～４２ｃは、例えばはんだにより接合される。 The n-type thermoelectric elements 31a to 31c and the p-type thermoelectric elements 32a to 32c, and the electrodes 41a to 41d and the electrodes 42a to 42c are joined by, for example, solder.
　第１絶縁基板１０の下には、第１絶縁層１２が設けられる。第２絶縁基板２０の上には第２絶縁層２２が設けられる。第１絶縁層１２と第２絶縁層２２は、酸化アルミニウム、窒化アルミニウム、酸化ケイ素、窒化ケイ素、酸窒化ケイ素、窒化チタンまたは非導電性の有機材料から形成される。第１絶縁層１２と第２絶縁層２２は、酸化アルミニウム質焼結体または窒化アルミニウム質焼結体等の絶縁体から形成されても良い。 A first insulating layer 12 is provided under the first insulating substrate 10. A second insulating layer 22 is provided on the second insulating substrate 20. The first insulating layer 12 and the second insulating layer 22 are formed of aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, silicon oxynitride, titanium nitride, or a non-conductive organic material. The first insulating layer 12 and the second insulating layer 22 may be formed from an insulator such as an aluminum oxide sintered body or an aluminum nitride material sintered body.
　第１絶縁層１２の下には金属層１４が設けられる。また、第２絶縁層２２の上には金属層２４が設けられる。金属層１４、２４は例えば最表層が金から形成される。金属層１４、２４は、熱電変換素子モジュール１００の上または下に配置される部材をはんだ接合する場合に用いられる。なお、はんだ接合に代えて樹脂による接合を用いても良い。この場合、金属層１４、２４は設けられなくても良い。 A metal layer 14 is provided under the first insulating layer 12. Further, a metal layer 24 is provided on the second insulating layer 22. The outermost layers of the metal layers 14 and 24 are formed of gold, for example. The metal layers 14 and 24 are used when solder-bonding members arranged above or below the thermoelectric conversion element module 100. In addition, you may use resin bonding instead of solder bonding. In this case, the metal layers 14 and 24 may not be provided.
　次に、熱電変換素子モジュール１００の製造方法を説明する。まず、第１絶縁基板１０と第２絶縁基板２０とを焼成する。その後、第１絶縁基板１０の上面と反対側の面に第１絶縁層１２を設ける。また、第２絶縁基板２０の裏面と反対側の面に第２絶縁層２２を設ける。 Next, a method of manufacturing the thermoelectric conversion element module 100 will be described. First, the first insulating substrate 10 and the second insulating substrate 20 are fired. After that, the first insulating layer 12 is provided on the surface opposite to the upper surface of the first insulating substrate 10. Further, the second insulating layer 22 is provided on the surface opposite to the back surface of the second insulating substrate 20.
　第１絶縁層１２は、例えばグリーンシート積層体を焼成して第１絶縁基板１０を形成した後、第１絶縁基板１０にスパッタまたは蒸着を行うことで形成される。第２絶縁層２２は、例えばグリーンシート積層体を焼成して第２絶縁基板２０を形成した後、第２絶縁基板２０にスパッタまたは蒸着を行うことで形成される。このため、第１絶縁層１２と第２絶縁層２２は、焼成されない。第１絶縁層１２と第２絶縁層２２の厚さは、スパッタまたは蒸着で形成できる一般的な厚さであれば良い。 The first insulating layer 12 is formed by, for example, firing a green sheet laminate to form the first insulating substrate 10, and then sputtering or vapor-depositing the first insulating substrate 10. The second insulating layer 22 is formed by, for example, firing a green sheet laminate to form a second insulating substrate 20, and then sputtering or vapor-depositing the second insulating substrate 20. Therefore, the first insulating layer 12 and the second insulating layer 22 are not fired. The thickness of the first insulating layer 12 and the second insulating layer 22 may be any general thickness that can be formed by sputtering or vapor deposition.
　次に、第１絶縁層１２の第１絶縁基板１０と反対側の面に金属層１４を形成する。また、第２絶縁層２２の第２絶縁基板２０と反対側の面に金属層２４を形成する。 Next, the metal layer 14 is formed on the surface of the first insulating layer 12 opposite to the first insulating substrate 10. Further, the metal layer 24 is formed on the surface of the second insulating layer 22 opposite to the second insulating substrate 20.
　次に、第１絶縁基板１０と第２絶縁基板２０との間にｎ型熱電素子とｐ型熱電素子とを設ける。このとき、電極４１ａとｎ型熱電素子３１ａの下端側とを電気的に接続する。また、電極４２ａでｎ型熱電素子３１ａの上端側とｐ型熱電素子３２ａの上端側とを電気的に接続する。また、電極４１ｂでｐ型熱電素子３２ａの下端側とｎ型熱電素子３１ｂの下端側とを電気的に接続する。また、電極４２ｂでｎ型熱電素子３１ｂの上端側とｐ型熱電素子３２ｂの上端側とを電気的に接続する。また、電極４１ｃでｐ型熱電素子３２ｂの下端側とｎ型熱電素子３１ｃの下端側とを電気的に接続する。また、電極４２ｃでｎ型熱電素子３１ｃの上端側とｐ型熱電素子３２ｃの上端側とを電気的に接続する。また、電極４１ｄとｐ型熱電素子３２ｃの下端側とを電気的に接続する。 Next, an n-type thermoelectric element and a p-type thermoelectric element are provided between the first insulating substrate 10 and the second insulating substrate 20. At this time, the electrode 41a and the lower end side of the n-type thermoelectric element 31a are electrically connected. Further, the electrode 42a electrically connects the upper end side of the n-type thermoelectric element 31a and the upper end side of the p-type thermoelectric element 32a. Further, the electrode 41b electrically connects the lower end side of the p-type thermoelectric element 32a and the lower end side of the n-type thermoelectric element 31b. Further, the electrode 42b electrically connects the upper end side of the n-type thermoelectric element 31b and the upper end side of the p-type thermoelectric element 32b. Further, the electrode 41c electrically connects the lower end side of the p-type thermoelectric element 32b and the lower end side of the n-type thermoelectric element 31c. Further, the electrode 42c electrically connects the upper end side of the n-type thermoelectric element 31c and the upper end side of the p-type thermoelectric element 32c. Further, the electrode 41d and the lower end side of the p-type thermoelectric element 32c are electrically connected.
　図２は、実施の形態１に係る熱電変換素子モジュール１００に半導体装置５０を搭載した状態を示す断面図である。半導体装置５０は基板５１と、基板５１の上面に設けられた半導体チップ５２を備える。半導体装置５０は金属ブロック６０を介して熱電変換素子モジュール１００の上に設けられる。金属ブロック６０は、例えばはんだで金属層２４に接合されている。なお、金属ブロック６０は設けられなくても良い。 FIG. 2 is a cross-sectional view showing a state in which the semiconductor device 50 is mounted on the thermoelectric conversion element module 100 according to the first embodiment. The semiconductor device 50 includes a substrate 51 and a semiconductor chip 52 provided on the upper surface of the substrate 51. The semiconductor device 50 is provided on the thermoelectric conversion element module 100 via the metal block 60. The metal block 60 is joined to the metal layer 24 with, for example, solder. The metal block 60 may not be provided.
　電極４１ａと電極４１ｄの間には電源７０が接続される。これにより、複数の熱電素子の閉回路が形成される。閉回路において、図２の矢印に示される方向に直流電流が流れる。これにより、ｎ型熱電素子３１ａ～３１ｃとｐ型熱電素子３２ａ～３２ｃのそれぞれにおいて、第２絶縁基板２０から第１絶縁基板１０に向かう方向にキャリアが移動する。キャリアの移動に伴い、第２絶縁基板２０から吸熱され、第１絶縁基板１０に放熱される。従って、半導体装置５０を冷却できる。また、電流を逆向きに流すことで、半導体装置５０を加熱することもできる。 A power supply 70 is connected between the electrodes 41a and 41d. As a result, a closed circuit of a plurality of thermoelectric elements is formed. In the closed circuit, a direct current flows in the direction indicated by the arrow in FIG. As a result, in each of the n-type thermoelectric elements 31a to 31c and the p-type thermoelectric elements 32a to 32c, the carrier moves in the direction from the second insulating substrate 20 to the first insulating substrate 10. As the carrier moves, heat is absorbed from the second insulating substrate 20 and dissipated to the first insulating substrate 10. Therefore, the semiconductor device 50 can be cooled. Further, the semiconductor device 50 can be heated by passing an electric current in the opposite direction.
　このように、熱電変換素子モジュール１００は、ゼーベック効果あるいはペルチエ効果を利用して冷却または加熱用モジュールとして用いられる。 As described above, the thermoelectric conversion element module 100 is used as a cooling or heating module by utilizing the Seebeck effect or the Peltier effect.
　セラミック基板では、ボイドまたはクラックにより、基板を厚さ方向に貫通する経路が発生することがある。特に、グリーンシートから形成されたセラミック基板は、製造過程において、ボイドまたはクラックが発生し易い傾向にある。このようなセラミック基板に電圧が印加されると、ボイドまたはクラックにより生じた経路でエレクトロマイグレーションが発生するおそれがある。このとき、セラミック基板の表裏間が導通し、熱電素子によって形成される電気回路がセラミック基板を介して外部と電気的に接続されるおそれがある。従って、熱電変換素子モジュールが機能を果たせなくなる可能性がある。 In a ceramic substrate, voids or cracks may cause a path that penetrates the substrate in the thickness direction. In particular, a ceramic substrate formed from a green sheet tends to have voids or cracks in the manufacturing process. When a voltage is applied to such a ceramic substrate, electromigration may occur in the path created by voids or cracks. At this time, the front and back surfaces of the ceramic substrate may be electrically connected, and the electric circuit formed by the thermoelectric element may be electrically connected to the outside via the ceramic substrate. Therefore, the thermoelectric conversion element module may not function.
　セラミック基板の表裏間での導通は、一般に製造過程では発生せず、市場での実稼働時に発生することが多い。また、このような不良の発生率は一般に低い。このため、事前に不良の発生する可能性のある熱電変換素子モジュールを排除することは一般に困難である。 Continuity between the front and back of a ceramic substrate generally does not occur in the manufacturing process, but often occurs during actual operation in the market. Moreover, the incidence of such defects is generally low. For this reason, it is generally difficult to eliminate thermoelectric conversion element modules that may cause defects in advance.
　これに対し、本実施の形態では第１絶縁基板１０の電極４１ａ～４１ｄが設けられる面と対向する面に第１絶縁層１２が設けられる。同様に、第２絶縁基板２０の電極４２ａ～４２ｃが設けられる面と対向する面に第２絶縁層２２が設けられる。従って、第１絶縁基板１０または第２絶縁基板２０に厚さ方向に貫通する経路が形成された場合にも、熱電素子によって形成される電気回路が外部と電気的に接続されることを抑制できる。従って、熱電変換素子モジュール１００が製品に実装され市場で稼働している状態において、熱電変換素子モジュール１００の機能を確実に実現できる。 On the other hand, in the present embodiment, the first insulating layer 12 is provided on the surface of the first insulating substrate 10 facing the surface on which the electrodes 41a to 41d are provided. Similarly, the second insulating layer 22 is provided on the surface of the second insulating substrate 20 facing the surface on which the electrodes 42a to 42c are provided. Therefore, even when a path penetrating in the thickness direction is formed in the first insulating substrate 10 or the second insulating substrate 20, it is possible to prevent the electric circuit formed by the thermoelectric element from being electrically connected to the outside. .. Therefore, the function of the thermoelectric conversion element module 100 can be surely realized in a state where the thermoelectric conversion element module 100 is mounted on the product and is in operation in the market.
　特に本実施の形態では、第１絶縁基板１０と第２絶縁基板２０の焼成後に第１絶縁層１２と第２絶縁層２２が形成される。このため、第１絶縁層１２と第２絶縁層２２は不焼成である。第１絶縁層１２と第２絶縁層２２では、焼成された第１絶縁基板１０と第２絶縁基板２０と比較してボイドまたはクラックの発生を抑制できる。 In particular, in the present embodiment, the first insulating layer 12 and the second insulating layer 22 are formed after the first insulating substrate 10 and the second insulating substrate 20 are fired. Therefore, the first insulating layer 12 and the second insulating layer 22 are not fired. In the first insulating layer 12 and the second insulating layer 22, the occurrence of voids or cracks can be suppressed as compared with the fired first insulating substrate 10 and the second insulating substrate 20.
　また、一般に、スパッタまたは蒸着により形成される絶縁層にはボイドまたはクラックが発生しない。このため、第１絶縁層１２および第２絶縁層２２をスパッタまたは蒸着により形成することで、ボイドまたはクラックの発生を抑制できる。 Also, in general, voids or cracks do not occur in the insulating layer formed by sputtering or vapor deposition. Therefore, by forming the first insulating layer 12 and the second insulating layer 22 by sputtering or vapor deposition, the occurrence of voids or cracks can be suppressed.
　また、第１絶縁層１２と第２絶縁層２２は、第１絶縁基板１０または第２絶縁基板２０と比較してボイドまたはクラックの発生を抑制できれば、第１絶縁基板１０または第２絶縁基板２０と同じ材料から形成されても良い。例えば、第１絶縁層１２および第２絶縁層２２と、第１絶縁基板１０および第２絶縁基板２０とを熱伝導率の高い同じ材料から形成しても良い。これにより、熱電変換素子モジュール１００の温度調節機能を向上できる。 Further, if the first insulating layer 12 and the second insulating layer 22 can suppress the occurrence of voids or cracks as compared with the first insulating substrate 10 or the second insulating substrate 20, the first insulating substrate 10 or the second insulating substrate 20 It may be formed from the same material as. For example, the first insulating layer 12 and the second insulating layer 22 and the first insulating substrate 10 and the second insulating substrate 20 may be formed of the same material having high thermal conductivity. Thereby, the temperature control function of the thermoelectric conversion element module 100 can be improved.
　また、第１絶縁層１２は第１絶縁基板１０よりもボイドまたはクラックが発生しにくい材料から形成されても良い。同様に、第２絶縁層２２は第２絶縁基板２０よりもボイドまたはクラックが発生しにくい材料から形成されても良い。 Further, the first insulating layer 12 may be formed of a material that is less likely to generate voids or cracks than the first insulating substrate 10. Similarly, the second insulating layer 22 may be formed of a material that is less likely to generate voids or cracks than the second insulating substrate 20.
　また、本実施の形態では、第１絶縁基板１０と第２絶縁基板２０の焼成後に、第１絶縁層１２と第２絶縁層２２が形成される。このため、第１絶縁層１２と第２絶縁層２２の焼成温度は第１絶縁基板１０と第２絶縁基板２０の焼成温度によって制限されない。例えば、本実施の形態では、第１絶縁層１２の焼成温度は、第１絶縁基板１０の焼成温度以下であっても良い。また、第２絶縁層２２の焼成温度は、第２絶縁基板２０の焼成温度以下であっても良い。このように、本実施の形態では第１絶縁層１２と第２絶縁層２２の材料の自由度を向上できる。 Further, in the present embodiment, the first insulating layer 12 and the second insulating layer 22 are formed after the first insulating substrate 10 and the second insulating substrate 20 are fired. Therefore, the firing temperatures of the first insulating layer 12 and the second insulating layer 22 are not limited by the firing temperatures of the first insulating substrate 10 and the second insulating substrate 20. For example, in the present embodiment, the firing temperature of the first insulating layer 12 may be equal to or lower than the firing temperature of the first insulating substrate 10. Further, the firing temperature of the second insulating layer 22 may be equal to or lower than the firing temperature of the second insulating substrate 20. As described above, in the present embodiment, the degree of freedom of the materials of the first insulating layer 12 and the second insulating layer 22 can be improved.
　これらの変形は以下の実施の形態に係る熱電変換素子モジュールおよび熱電変換素子モジュールの製造方法について適宜応用することができる。なお、以下の実施の形態に係る熱電変換素子モジュールおよび熱電変換素子モジュールの製造方法については実施の形態１との共通点が多いので、実施の形態１との相違点を中心に説明する。 These modifications can be appropriately applied to the thermoelectric conversion element module and the method for manufacturing the thermoelectric conversion element module according to the following embodiments. Since the thermoelectric conversion element module and the method for manufacturing the thermoelectric conversion element module according to the following embodiments have much in common with the first embodiment, the differences from the first embodiment will be mainly described.
実施の形態２．
　図３は、実施の形態２に係る熱電変換素子モジュール２００の断面図である。熱電変換素子モジュール２００は、第１絶縁基板２１０ａと第２絶縁基板２２０ａを備える。第１絶縁基板２１０ａと第２絶縁基板２２０ａの間には、実施の形態１と同様に、電極４１ａ～４１ｄ、電極４２ａ～４２ｃ、ｎ型熱電素子３１ａ～３１ｃおよびｐ型熱電素子３２ａ～３２ｃにより電気回路が形成される。 Embodiment 2.
FIG. 3 is a cross-sectional view of the thermoelectric conversion element module 200 according to the second embodiment. The thermoelectric conversion element module 200 includes a first insulating substrate 210a and a second insulating substrate 220a. Between the first insulating substrate 210a and the second insulating substrate 220a, as in the first embodiment, electrodes 41a to 41d, electrodes 42a to 42c, n-type thermoelectric elements 31a to 31c, and p-type thermoelectric elements 32a to 32c are used. An electric circuit is formed.
　第１絶縁基板２１０ａの下には第１絶縁層２１２ａが設けられる。第１絶縁層２１２ａの下には第３絶縁基板２１０ｂが設けられる。第３絶縁基板２１０ｂの下には第３絶縁層２１２ｂが設けられる。第３絶縁層２１２ｂの下には金属層１４が設けられる。 A first insulating layer 212a is provided under the first insulating substrate 210a. A third insulating substrate 210b is provided below the first insulating layer 212a. A third insulating layer 212b is provided below the third insulating substrate 210b. A metal layer 14 is provided under the third insulating layer 212b.
　第２絶縁基板２２０ａの上には第２絶縁層２２２ａが設けられる。第２絶縁層２２２ａの上には第４絶縁基板２２０ｂが設けられる。第４絶縁基板２２０ｂの上には第４絶縁層２２２ｂが設けられる。第４絶縁層２２２ｂの上には金属層２４が設けられる。 A second insulating layer 222a is provided on the second insulating substrate 220a. A fourth insulating substrate 220b is provided on the second insulating layer 222a. A fourth insulating layer 222b is provided on the fourth insulating substrate 220b. A metal layer 24 is provided on the fourth insulating layer 222b.
　本実施の形態では、複数の絶縁基板が積層する。また、各々の絶縁基板の熱電素子と反対側の面には絶縁層が設けられる。複数の絶縁基板および複数の絶縁層が積層することで、絶縁基板に発生したボイドまたはクラックを介して、熱電素子によって形成される電気回路が外部と電気的に接続されることをさらに抑制できる。 In this embodiment, a plurality of insulating substrates are laminated. Further, an insulating layer is provided on the surface of each insulating substrate opposite to the thermoelectric element. By stacking the plurality of insulating substrates and the plurality of insulating layers, it is possible to further suppress that the electric circuit formed by the thermoelectric element is electrically connected to the outside through voids or cracks generated in the insulating substrate.
　第１絶縁基板２１０ａ、第２絶縁基板２２０ａ、第３絶縁基板２１０ｂ、第４絶縁基板２２０ｂは、それぞれが単体のグリーンシートであっても良い。また、第１絶縁基板２１０ａ、第２絶縁基板２２０ａ、第３絶縁基板２１０ｂ、第４絶縁基板２２０ｂは、それぞれがグリーンシート積層体であっても良い。また、本実施の形態では、絶縁基板は２重に積層しているが、３重以上に積層しても良い。 The first insulating substrate 210a, the second insulating substrate 220a, the third insulating substrate 210b, and the fourth insulating substrate 220b may each be a single green sheet. Further, the first insulating substrate 210a, the second insulating substrate 220a, the third insulating substrate 210b, and the fourth insulating substrate 220b may each be a green sheet laminate. Further, in the present embodiment, the insulating substrates are laminated in two layers, but may be laminated in three or more layers.
実施の形態３．
　図４は、実施の形態３に係る熱電変換素子モジュール３００の断面図である。本実施の形態では、第１絶縁基板１０の下に第１金属層３１１が設けられる。第１金属層３１１の下には第１絶縁層１２が設けられる。また、第２絶縁基板２０の上に第２金属層３２１が設けられる。第２金属層３２１の上には第２絶縁層２２が設けられる。これ以外の構成は、実施の形態１と同様である。このように、第１絶縁基板１０および第２絶縁基板２０には、メタライズが施されていても良い。 Embodiment 3.
FIG. 4 is a cross-sectional view of the thermoelectric conversion element module 300 according to the third embodiment. In the present embodiment, the first metal layer 311 is provided under the first insulating substrate 10. A first insulating layer 12 is provided under the first metal layer 311. Further, the second metal layer 321 is provided on the second insulating substrate 20. A second insulating layer 22 is provided on the second metal layer 321. Other configurations are the same as those in the first embodiment. As described above, the first insulating substrate 10 and the second insulating substrate 20 may be metallized.
　本実施の形態の第１金属層３１１および第２金属層３２１は、例えば金またはニッケルから形成されても良い。また、第１金属層３１１および第２金属層３２１は、それぞれ複数の層から形成されても良い。複数の層は、例えばニッケルから形成される層および金から形成される層を含む。 The first metal layer 311 and the second metal layer 321 of the present embodiment may be formed of, for example, gold or nickel. Further, the first metal layer 311 and the second metal layer 321 may each be formed from a plurality of layers. The plurality of layers include, for example, a layer formed of nickel and a layer formed of gold.
　一般に、絶縁基板には金属層が被着されている場合がある。このような絶縁基板にボイドまたはクラックが形成されると、金属層のうち絶縁基板から１層目の金属成分がボイドまたはクラックに侵入することがある。本実施の形態においても、第１金属層３１１および第２金属層３２１の金属成分が、それぞれ第１絶縁基板１０および第２絶縁基板２０の欠陥に侵入するおそれがある。このため、本実施の形態では、実施の形態１と比較して、エレクトロマイグレーションにより絶縁基板の表裏間が導通し易い。 In general, the insulating substrate may be covered with a metal layer. When voids or cracks are formed in such an insulating substrate, the metal component of the first layer from the insulating substrate among the metal layers may invade the voids or cracks. Also in this embodiment, the metal components of the first metal layer 311 and the second metal layer 321 may invade the defects of the first insulating substrate 10 and the second insulating substrate 20, respectively. Therefore, in the present embodiment, as compared with the first embodiment, the front and back surfaces of the insulating substrate are more likely to be electrically connected by electromigration.
　本実施の形態では、このような場合においても、第１金属層３１１と金属層１４の間に設けられた第１絶縁層１２により、熱電素子によって形成される電気回路が第１絶縁基板１０を介して外部と電気的に接続されることを抑制できる。また、第２金属層３２１と金属層２４の間に設けられた第２絶縁層２２により、熱電素子によって形成される電気回路が第２絶縁基板２０を介して外部と電気的に接続されることを抑制できる。 In the present embodiment, even in such a case, the electric circuit formed by the thermoelectric element by the first insulating layer 12 provided between the first metal layer 311 and the metal layer 14 forms the first insulating substrate 10. It is possible to suppress the electrical connection with the outside through the device. Further, the electric circuit formed by the thermoelectric element is electrically connected to the outside via the second insulating substrate 20 by the second insulating layer 22 provided between the second metal layer 321 and the metal layer 24. Can be suppressed.
　なお、各実施の形態で説明した技術的特徴は適宜に組み合わせて用いても良い。 Note that the technical features described in each embodiment may be used in combination as appropriate.
　１０　第１絶縁基板、１２　第１絶縁層、１４　金属層、２０　第２絶縁基板、２２　第２絶縁層、２４　金属層、３１ａ、３１ｂ、３１ｃ　ｎ型熱電素子、３２ａ、３２ｂ、３２ｃ　ｐ型熱電素子、４１ａ、４１ｂ、４１ｃ、４１ｄ、４２ａ、４２ｂ、４２ｃ、５０　半導体装置、５１　基板、５２　半導体チップ、６０　金属ブロック、７０　電源、１００、２００　熱電変換素子モジュール、２１０ａ　第１絶縁基板、２１０ｂ　第３絶縁基板、２１２ａ　第１絶縁層、２１２ｂ　第３絶縁層、２２０ａ　第２絶縁基板、２２０ｂ　第４絶縁基板、２２２ａ　第２絶縁層、２２２ｂ　第４絶縁層、３００　熱電変換素子モジュール、３１１　第１金属層、３２１　第２金属層 10 first insulating substrate, 12 first insulating layer, 14 metal layer, 20 second insulating substrate, 22 second insulating layer, 24 metal layer, 31a, 31b, 31c n-type thermoelectric element, 32a, 32b, 32c p-type thermoelectric element Element, 41a, 41b, 41c, 41d, 42a, 42b, 42c, 50 semiconductor device, 51 substrate, 52 semiconductor chip, 60 metal block, 70 power supply, 100, 200 thermoelectric conversion element module, 210a first insulating substrate, 210b first 3 Insulation Substrate, 212a 1st Insulation Layer, 212b 3rd Insulation Layer, 220a 2nd Insulation Substrate, 220b 4th Insulation Substrate, 222a 2nd Insulation Layer, 222b 4th Insulation Layer, 300 Thermoelectric Conversion Element Module, 311 First Metal Layer, 321 second metal layer

Claims (8)

  1. 　第１絶縁基板と、
    　前記第１絶縁基板の上方に設けられた第２絶縁基板と、
    　前記第１絶縁基板と前記第２絶縁基板との間に設けられたｎ型熱電素子と、
    　前記第１絶縁基板と前記第２絶縁基板との間に設けられたｐ型熱電素子と、
    　前記第２絶縁基板のうち前記第１絶縁基板と対向する面である裏面に設けられ、前記ｎ型熱電素子の上端側と前記ｐ型熱電素子の上端側とを電気的に接続する第１電極と、
    　前記第１絶縁基板の上面に設けられ、前記ｎ型熱電素子の下端側と電気的に接続された第２電極と、
    　前記第１絶縁基板の前記上面に設けられ、前記ｐ型熱電素子の下端側と電気的に接続された第３電極と、
    　前記第１絶縁基板の下に設けられた第１金属層と、
    　前記第１金属層の下に設けられた第１絶縁層と、
    　前記第２絶縁基板の上に設けられた第２金属層と、
    　前記第２金属層の上に設けられた第２絶縁層と、
    　を備えることを特徴とする熱電変換素子モジュール。     With the first insulating substrate
    A second insulating substrate provided above the first insulating substrate and
    An n-type thermoelectric element provided between the first insulating substrate and the second insulating substrate,
    A p-type thermoelectric element provided between the first insulating substrate and the second insulating substrate,
    A first electrode provided on the back surface of the second insulating substrate, which is a surface facing the first insulating substrate, and electrically connects the upper end side of the n-type thermoelectric element and the upper end side of the p-type thermoelectric element. When,
    A second electrode provided on the upper surface of the first insulating substrate and electrically connected to the lower end side of the n-type thermoelectric element, and
    A third electrode provided on the upper surface of the first insulating substrate and electrically connected to the lower end side of the p-type thermoelectric element.
    A first metal layer provided under the first insulating substrate and
    A first insulating layer provided under the first metal layer and
    A second metal layer provided on the second insulating substrate and
    A second insulating layer provided on the second metal layer and
    A thermoelectric conversion element module characterized by being equipped with.
  2. 　第１絶縁基板と、
    　前記第１絶縁基板の上方に設けられた第２絶縁基板と、
    　前記第１絶縁基板と前記第２絶縁基板との間に設けられたｎ型熱電素子と、
    　前記第１絶縁基板と前記第２絶縁基板との間に設けられたｐ型熱電素子と、
    　前記第２絶縁基板のうち前記第１絶縁基板と対向する面である裏面に設けられ、前記ｎ型熱電素子の上端側と前記ｐ型熱電素子の上端側とを電気的に接続する第１電極と、
    　前記第１絶縁基板の上面に設けられ、前記ｎ型熱電素子の下端側と電気的に接続された第２電極と、
    　前記第１絶縁基板の前記上面に設けられ、前記ｐ型熱電素子の下端側と電気的に接続された第３電極と、
    　前記第１絶縁基板の下に設けられた第１絶縁層と、
    　前記第２絶縁基板の上に設けられた第２絶縁層と、
    　を備え、
    　前記第１絶縁基板と前記第２絶縁基板はセラミック基板であり、
    　前記第１絶縁層と前記第２絶縁層は不焼成であることを特徴とする熱電変換素子モジュール。     With the first insulating substrate
    A second insulating substrate provided above the first insulating substrate and
    An n-type thermoelectric element provided between the first insulating substrate and the second insulating substrate,
    A p-type thermoelectric element provided between the first insulating substrate and the second insulating substrate,
    A first electrode provided on the back surface of the second insulating substrate, which is a surface facing the first insulating substrate, and electrically connects the upper end side of the n-type thermoelectric element and the upper end side of the p-type thermoelectric element. When,
    A second electrode provided on the upper surface of the first insulating substrate and electrically connected to the lower end side of the n-type thermoelectric element, and
    A third electrode provided on the upper surface of the first insulating substrate and electrically connected to the lower end side of the p-type thermoelectric element.
    A first insulating layer provided under the first insulating substrate and
    A second insulating layer provided on the second insulating substrate and
    With
    The first insulating substrate and the second insulating substrate are ceramic substrates.
    A thermoelectric conversion element module characterized in that the first insulating layer and the second insulating layer are not fired.
  3. 　前記第１絶縁基板と前記第２絶縁基板はセラミック基板であり、
    　前記第１絶縁層と前記第２絶縁層は不焼成であることを特徴とする請求項１に記載の熱電変換素子モジュール。     The first insulating substrate and the second insulating substrate are ceramic substrates.
    The thermoelectric conversion element module according to claim 1, wherein the first insulating layer and the second insulating layer are not fired.
  4. 　前記第１絶縁層の焼成温度は、前記第１絶縁基板の焼成温度以下であることを特徴とする請求項１から３の何れか１項に記載の熱電変換素子モジュール。 The thermoelectric conversion element module according to any one of claims 1 to 3, wherein the firing temperature of the first insulating layer is equal to or lower than the firing temperature of the first insulating substrate.
  5. 　前記第１絶縁基板と前記第２絶縁基板は、グリーンシートから形成されることを特徴とする請求項１から４の何れか１項に記載の熱電変換素子モジュール。 The thermoelectric conversion element module according to any one of claims 1 to 4, wherein the first insulating substrate and the second insulating substrate are formed of a green sheet.
  6. 　前記第１絶縁層と前記第２絶縁層は、酸化アルミニウム、窒化アルミニウム、酸化ケイ素、窒化ケイ素、酸窒化ケイ素、窒化チタンまたは非導電性の有機材料から形成されることを特徴とする請求項１から５の何れか１項に記載の熱電変換素子モジュール。 The first insulating layer and the second insulating layer are formed of aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, silicon oxynitride, titanium nitride, or a non-conductive organic material. The thermoelectric conversion element module according to any one of 5 to 5.
  7. 　前記第１絶縁層の下に設けられた第３絶縁基板と、
    　前記第３絶縁基板の下に設けられた第３絶縁層と、
    　前記第２絶縁層の上に設けられた第４絶縁基板と、
    　前記第４絶縁基板の上に設けられた第４絶縁層と、
    　を備えることを特徴とする請求項１から６の何れか１項に記載の熱電変換素子モジュール。     A third insulating substrate provided under the first insulating layer and
    A third insulating layer provided under the third insulating substrate and
    A fourth insulating substrate provided on the second insulating layer and
    With the fourth insulating layer provided on the fourth insulating substrate,
    The thermoelectric conversion element module according to any one of claims 1 to 6, wherein the thermoelectric conversion element module is provided.
  8. 　第１絶縁基板と前記第１絶縁基板の上方に設けられた第２絶縁基板との間にｎ型熱電素子とｐ型熱電素子とを設け、前記第２絶縁基板のうち前記第１絶縁基板と対向する面である裏面に設けられた第１電極で前記ｎ型熱電素子の上端側と前記ｐ型熱電素子の上端側とを電気的に接続し、前記第１絶縁基板の上面に設けられた第２電極と前記ｎ型熱電素子の下端側とを電気的に接続し、前記第１絶縁基板の前記上面に設けられた第３電極と前記ｐ型熱電素子の下端側とを電気的に接続し、
    　前記第１絶縁基板と前記第２絶縁基板とを焼成した後に、前記第１絶縁基板の下に第１絶縁層を設け、前記第２絶縁基板の上に第２絶縁層を設けることを特徴とする熱電変換素子モジュールの製造方法。     An n-type thermoelectric element and a p-type thermoelectric element are provided between the first insulating substrate and the second insulated substrate provided above the first insulated substrate, and the first insulated substrate of the second insulated substrate is provided. The upper end side of the n-type thermoelectric element and the upper end side of the p-type thermoelectric element are electrically connected by a first electrode provided on the back surface, which is a facing surface, and provided on the upper surface of the first insulating substrate. The second electrode and the lower end side of the n-type thermoelectric element are electrically connected, and the third electrode provided on the upper surface of the first insulating substrate and the lower end side of the p-type thermoelectric element are electrically connected. And
    After the first insulating substrate and the second insulating substrate are fired, a first insulating layer is provided under the first insulating substrate, and a second insulating layer is provided on the second insulating substrate. A method of manufacturing a thermoelectric conversion element module.
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