WO2021078147A1 - 天线装置及电子设备 - Google Patents

天线装置及电子设备 Download PDF

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Publication number
WO2021078147A1
WO2021078147A1 PCT/CN2020/122464 CN2020122464W WO2021078147A1 WO 2021078147 A1 WO2021078147 A1 WO 2021078147A1 CN 2020122464 W CN2020122464 W CN 2020122464W WO 2021078147 A1 WO2021078147 A1 WO 2021078147A1
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WIPO (PCT)
Prior art keywords
resonant
plate
frequency signal
radio frequency
resonant plate
Prior art date
Application number
PCT/CN2020/122464
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English (en)
French (fr)
Inventor
贾玉虎
Original Assignee
Oppo广东移动通信有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oppo广东移动通信有限公司 filed Critical Oppo广东移动通信有限公司
Priority to EP20878828.1A priority Critical patent/EP4040601A4/en
Publication of WO2021078147A1 publication Critical patent/WO2021078147A1/zh
Priority to US17/704,208 priority patent/US20220216615A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/10—Resonant antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/40—Imbricated or interleaved structures; Combined or electromagnetically coupled arrangements, e.g. comprising two or more non-connected fed radiating elements
    • H01Q5/42—Imbricated or interleaved structures; Combined or electromagnetically coupled arrangements, e.g. comprising two or more non-connected fed radiating elements using two or more imbricated arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H01Q1/241—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM
    • H01Q1/242—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use
    • H01Q1/243—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use with built-in antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/42—Housings not intimately mechanically associated with radiating elements, e.g. radome
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
    • H01Q21/061—Two dimensional planar arrays
    • H01Q21/065—Patch antenna array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/20—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements characterised by the operating wavebands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/30—Arrangements for providing operation on different wavebands
    • H01Q5/307—Individual or coupled radiating elements, each element being fed in an unspecified way
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/30—Arrangements for providing operation on different wavebands
    • H01Q5/307—Individual or coupled radiating elements, each element being fed in an unspecified way
    • H01Q5/314—Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • H01Q9/0414—Substantially flat resonant element parallel to ground plane, e.g. patch antenna in a stacked or folded configuration

Definitions

  • This application relates to the field of electronic equipment, and in particular to an antenna device and electronic equipment.
  • the fifth-generation (5th-Generation, 5G) mobile communication is favored by users due to its high communication speed.
  • 5G mobile communication when using 5G mobile communication to transmit data, the transmission speed is hundreds of times faster than that of 4G mobile communication.
  • Millimeter wave signals are the main means to realize 5G mobile communication.
  • millimeter wave antennas are usually installed in the containment space inside the electronic equipment, and the gain of millimeter wave signals radiated by the electronic equipment is poor. , In turn, makes the communication performance of the 5G millimeter wave signal poor.
  • the present application provides an antenna device and electronic equipment to solve the technical problem of poor communication performance of traditional millimeter wave signals.
  • the present application provides an antenna device, the antenna device including:
  • the antenna module is used to transmit and receive a first radio frequency signal of a first predetermined frequency band in a first predetermined direction range, and is also used to transmit and receive a second radio frequency signal of a second predetermined frequency band in a second predetermined direction range Signal, the first preset frequency band is smaller than the second preset frequency band, and there is an overlap area between the first preset direction range and the second preset direction range;
  • a radome, the radome and the antenna module are spaced apart, the radome includes a substrate and a resonant structure carried on the substrate, and the resonant structure is at least partially located in the overlapping area;
  • the resonant structure has at least an in-phase reflection characteristic for the first radio frequency signal and an in-phase reflection characteristic for the second radio frequency signal.
  • the present application provides an electronic device that includes a controller and the antenna device of the first aspect of the application, the antenna device is electrically connected to the controller, and the antenna module in the antenna device The group is used to send out the first radio frequency signal and the second radio frequency signal under the control of the controller.
  • FIG. 1 is a cross-sectional view of the antenna device provided by the first embodiment of the application.
  • FIG. 2 is a cross-sectional view of the antenna device provided by the second embodiment of this application.
  • FIG. 3 is a cross-sectional view of the antenna device provided by the third embodiment of this application.
  • FIG. 4 is a cross-sectional view of the antenna device provided by the fourth embodiment of this application.
  • FIG. 5 is a cross-sectional view of the antenna device provided by the fifth embodiment of this application.
  • FIG. 6 is a cross-sectional view of the resonant structure provided by the first embodiment of the application.
  • FIG. 7 is a distribution diagram of the resonant structure provided by the second embodiment of this application.
  • FIG. 8 is a distribution diagram of the resonant structure provided by the third embodiment of this application.
  • FIG. 9 is a cross-sectional view of the resonant structure provided by the fourth embodiment of this application.
  • FIG. 10 is a top view of the resonant structure provided by the fifth embodiment of this application.
  • FIG. 11 is a perspective view of the resonant structure provided by the fifth embodiment of this application.
  • Fig. 12 is a cross-sectional view taken along the line I-I in Fig. 10;
  • FIG. 13 is a top view of the resonant structure provided by the sixth embodiment of this application.
  • FIG. 14 is a perspective view of the resonant structure provided by the sixth embodiment of this application.
  • Fig. 15 is a cross-sectional view taken along line II-II in Fig. 13.
  • FIG. 16 is a top view of the resonant structure provided by the seventh embodiment of this application.
  • FIG. 17 is a perspective view of the resonant structure provided by the seventh embodiment of this application.
  • Fig. 18 is a cross-sectional view taken along line III-III in Fig. 16.
  • FIG. 19 is a top view of the resonant structure provided by the eighth embodiment of this application.
  • FIG. 20 is a perspective view of the resonant structure provided by the eighth embodiment of this application.
  • Fig. 21 is a cross-sectional view taken along line IV-IV in Fig. 19.
  • FIG. 22 is a cross-sectional view of the resonant structure provided in the ninth embodiment of this application.
  • FIG. 23 is a schematic diagram of the resonant structure provided by the tenth embodiment of this application.
  • FIG. 24 is a schematic diagram of the resonant structure provided by the eleventh embodiment of this application.
  • FIG. 25 is a schematic diagram of the resonant structure provided by the twelfth embodiment of this application.
  • 26-33 are schematic diagrams of the structure of the resonant unit in the resonant structure.
  • FIG. 34 shows the reflection coefficient S11 curves corresponding to substrates with different dielectric constants.
  • FIG. 35 shows the reflection phases corresponding to the 28 GHz radio frequency signal in the curve of reflection phases corresponding to substrates with different dielectric constants.
  • FIG. 36 shows the reflection phase corresponding to the 39 GHz radio frequency signal in the curve of the reflection phase corresponding to the substrates with different dielectric constants.
  • FIG. 37 is a schematic diagram of the reflection coefficient S11 and the transmission coefficient S12 of the radome provided by this application.
  • FIG. 38 is a schematic diagram of the reflection phase curve of the radome provided by this application.
  • Fig. 39 is a directional pattern of the radome provided by this application at 28 GHz and 39 GHz.
  • FIG. 40 is a circuit block diagram of an electronic device according to an embodiment of the application.
  • FIG. 41 is a schematic structural diagram of an electronic device provided by an embodiment of this application.
  • FIG. 42 is a schematic structural diagram of an electronic device provided by an embodiment of this application.
  • an embodiment of the present application provides an antenna device, and the antenna device includes:
  • the antenna module is used to transmit and receive a first radio frequency signal of a first predetermined frequency band in a first predetermined direction range, and is also used to transmit and receive a second radio frequency signal of a second predetermined frequency band in a second predetermined direction range Signal, the first preset frequency band is smaller than the second preset frequency band, and there is an overlap area between the first preset direction range and the second preset direction range;
  • a radome, the radome and the antenna module are spaced apart, the radome includes a substrate and a resonant structure carried on the substrate, and the resonant structure is at least partially located in the overlapping area;
  • the resonant structure has at least an in-phase reflection characteristic for the first radio frequency signal and an in-phase reflection characteristic for the second radio frequency signal.
  • the resonant structure at least satisfies:
  • the resonant structure includes a first resonator structure and a second resonator structure arranged at intervals, the first resonator structure has in-phase reflection characteristics for the first radio frequency signal, and the second resonator structure is opposite to the The second radio frequency signal has in-phase reflection characteristics.
  • the resonant structure includes a first resonant layer and a second resonant layer that are stacked, the first resonant layer is away from the antenna module compared to the second resonant layer, and the first resonant layer includes periodicity.
  • a first resonant unit arranged in a sexual manner includes a first resonant plate
  • the second resonant layer includes a second resonant unit arranged periodically
  • the second resonant unit includes a second resonant plate
  • the first resonant plate and the second resonant plate are arranged opposite to each other, and the orthographic projection of the second resonant plate on the plane where the first resonant plate is located at least partially overlaps the area where the first resonant plate is located, so Both the first resonant plate and the second resonant plate are conductive patches, and satisfy:
  • W low_f is the side length of the first resonant plate
  • L low_f is the side length of the second resonant plate
  • the first resonator structure includes at least the first resonant plate and the second resonant plate.
  • the resonant structure includes a first resonant layer and a second resonant layer that are stacked, the first resonant layer is away from the antenna module compared to the second resonant layer, and the first resonant layer includes periodicity.
  • a first resonant unit arranged in a sexual manner includes a first resonant plate
  • the second resonant layer includes a second resonant unit arranged periodically
  • the second resonant unit includes a second resonant plate
  • the first resonant plate and the second resonant plate are arranged opposite to each other, and the orthographic projection of the second resonant plate on the plane where the first resonant plate is located at least partially overlaps the area where the first resonant plate is located, so
  • the first resonant sheet is a conductive patch
  • the second resonant sheet is a conductive patch and has a first hollow structure penetrating two opposite surfaces of the second resonant sheet, satisfying:
  • W low_f is the side length of the first resonant plate
  • L low_f is the side length of the second resonant plate
  • the difference between L low_f and W low_f increases as the area of the first hollow structure increases, so
  • the first resonator structure includes at least the first resonant plate and the second resonant plate.
  • the first resonant unit includes a third resonant plate, the third resonant plate is spaced apart from the first resonant plate, and the side length of the third resonant plate is smaller than the side length of the first resonant plate
  • the second resonant unit includes a fourth resonant plate, the fourth resonant plate is spaced apart from the second resonant plate, the side length of the fourth resonant plate is smaller than the side length of the second resonant plate
  • the fourth resonant plate is arranged opposite to the third resonant plate, and the orthographic projection of the fourth resonant plate on the plane where the third resonant plate is located at least partially overlaps the area where the third resonant plate is located.
  • Both the third resonant plate and the fourth resonant plate are conductive patches, and satisfy:
  • W high_f is the side length of the third resonant plate
  • L high_f is the side length of the fourth resonant plate
  • the second resonator resonant structure includes at least the third resonant plate and the fourth resonant plate.
  • the first resonant unit includes a third resonant plate, the third resonant plate is spaced apart from the first resonant plate, and the side length of the third resonant plate is smaller than the side length of the first resonant plate
  • the second resonant unit includes a fourth resonant plate, the fourth resonant plate is spaced apart from the second resonant plate, the side length of the fourth resonant plate is smaller than the side length of the second resonant plate, and
  • the fourth resonant plate is arranged opposite to the third resonant plate, and the orthographic projection of the fourth resonant plate on the plane where the third resonant plate is located at least partially overlaps the area where the third resonant plate is located.
  • the third resonant sheet is a conductive patch
  • the fourth resonant sheet is a conductive patch and has a second hollow structure penetrating through two opposite surfaces of the fourth resonant sheet, satisfying:
  • W high_f is the side length of the third resonant plate
  • L high_f is the side length of the fourth resonant plate
  • the difference between L high_f and W high_f increases with the increase of the second hollow area
  • the second resonance The sub-resonant structure at least includes the third resonant plate and the fourth resonant plate.
  • the first resonant unit further includes another first resonant plate and another third resonant plate, the two first resonant plates are arranged diagonally and spaced apart, and the side length of the third resonant plate is smaller than that of the first resonant plate.
  • the side length of one resonant plate is, and the two third resonant plates are arranged diagonally and spaced apart.
  • the centers of the two first resonant plates as a whole coincide with the centers of the two third resonant plates as a whole.
  • the second resonant unit further includes another second resonant plate and another fourth resonant plate.
  • the two second resonant plates are arranged diagonally and spaced apart, and the two second resonant plates are diagonally spaced apart.
  • the four fourth resonant plates are diagonally and spaced apart.
  • the centers of the two second resonant plates as a whole coincide with the centers of the two fourth resonant plates as a whole.
  • the center of the first resonant plate and the center of the second resonant plate are electrically connected by a conductive member.
  • the resonant structure includes a plurality of first conductive lines arranged at intervals, and a plurality of second conductive lines arranged at intervals, the plurality of first conductive lines and the plurality of second conductive lines are arranged crosswise, and The plurality of first conductive lines and the plurality of second conductive lines are electrically connected at intersections.
  • the resonant structure includes a plurality of conductive grids arranged in an array, each of the conductive grids is surrounded by at least one conductive line, and two adjacent conductive grids at least partially multiplex the conductive line.
  • the distance between the radiating surface of the resonant structure facing the antenna module and the radiating surface of the antenna satisfies:
  • h is the length of the line segment from the radiation surface of the radiation surface of the antenna module to the surface of the resonant structure facing the antenna module, and the center line is perpendicular to the antenna module
  • the straight line of the radiating surface ⁇ R1 is the difference between the reflected phase and the incident phase of the first radio frequency signal by the resonant structure, ⁇ 1 is the wavelength of the first radio frequency signal in the air, and N is a positive integer .
  • the maximum value D max of the directivity coefficient of the antenna module satisfies among them,
  • S 11 represents the amplitude of the reflection coefficient of the radome to the first radio frequency signal.
  • the preset frequency band includes at least 3GPP millimeter wave full frequency band.
  • an embodiment of the present application provides an electronic device that includes a controller and the antenna device as described in any one of the preceding items, the antenna device is electrically connected to the controller, and the antenna device is The antenna module is used to send out the first radio frequency signal and the second radio frequency signal under the control of the controller.
  • the electronic device includes a battery cover
  • the substrate includes at least the battery cover
  • the resonant structure is directly arranged on the inner surface of the battery cover; or, the resonant structure is attached to the battery through a carrier film
  • the inner surface of the cover; or, the resonant structure is directly arranged on the outer surface of the battery cover; or, the resonant structure is attached to the outer surface of the battery cover through a carrier film; or, a part of the resonant structure It is arranged on the inner surface of the battery cover, and a part of the resonant structure is arranged on the outer surface of the battery cover; or, the resonant structure is partially embedded in the battery cover.
  • the electronic device further includes a screen
  • the substrate includes at least the screen
  • the screen includes a cover plate and a display module stacked on the cover plate
  • the resonant structure is located between the cover plate and the cover plate. Between display modules.
  • FIG. 1 is a cross-sectional view of the antenna device provided by the first embodiment of the application.
  • the antenna device 10 includes an antenna module 100 and a radome 200.
  • the antenna module 100 is used to transmit and receive a first radio frequency signal of a first predetermined frequency band in a first predetermined direction range, and is also used to transmit and receive a second radio frequency signal of a second predetermined frequency band in a second predetermined direction range, so
  • the first preset frequency band is smaller than the second preset frequency band, and there is an overlap area between the first preset direction range and the second preset direction range.
  • the radome 200 is spaced apart from the antenna module 100.
  • the radome 200 includes a substrate 210 and a resonant structure 230 carried on the substrate 210, and the resonant structure 230 is at least partially located in the overlapping area.
  • the resonant structure 230 has at least an in-phase reflection characteristic for the first radio frequency signal and an in-phase reflection characteristic for the second radio frequency signal. It is understandable that the resonant structure 230 has at least an in-phase reflection characteristic for the first radio frequency signal and an in-phase reflection characteristic for the second radio frequency signal, which means that the resonant structure 230 has an in-phase reflection characteristic for the first radio frequency signal.
  • the resonant structure 230 may also be in-phase reflection characteristics to the first radio frequency signal and the second radio frequency signal.
  • the radio frequency signal and other radio frequency signals other than the second radio frequency signal have in-phase reflection characteristics, that is, the resonant structure 230 has in-phase reflection characteristics for multiple radio frequency signals.
  • the first radio frequency signal may be, but is not limited to, a radio frequency signal in the millimeter wave frequency band or a radio frequency signal in the terahertz frequency band.
  • 5G 5th generation wireless systems
  • 3GPP Third Generation Partnership Project
  • NR 5G new radio
  • the frequency range of the FR1 frequency band is 450MHz to 6GHz, which is also called the sub-6GHz frequency band
  • the frequency range of the FR2 frequency band is 24.25GHz to 52.6GHz, which belongs to the millimeter wave (mm Wave) frequency band.
  • the second radio frequency signal may be, but not limited to, a radio frequency signal in the millimeter wave frequency band or a radio frequency signal in the terahertz frequency band.
  • the first preset frequency band of the first radio frequency signal may be the n261 frequency band
  • the second preset frequency band of the second radio frequency signal may be the n260 frequency band.
  • the first preset frequency band of the first radio frequency signal may be the n260 frequency band
  • the second preset frequency band of the second radio frequency signal may be the n261 frequency band
  • the first preset frequency band and the second preset frequency band may also be other frequency bands, as long as it is satisfied that the first preset frequency band is different from the second preset frequency band.
  • the resonance frequency of the n261 frequency band is 28 GHz
  • the resonance frequency of the n260 frequency band is 39 GHz.
  • the resonant structure 230 is carried on the substrate 210, and the resonant structure 230 may be provided corresponding to all areas of the substrate 210 or may be provided corresponding to a part of the substrate 210.
  • the resonant structure 230 is carried on the substrate 210 and corresponds to the entire area of the substrate 210 as an example for illustration.
  • the first preset direction range and the second preset direction range may be completely the same, and the first preset direction range and the second preset direction range may be different, as long as the first preset direction is satisfied
  • the in-phase reflection characteristic of the resonant structure 230 to the first radio frequency signal means that when the first radio frequency signal is incident on the resonant structure 230, the reflection phase of the first radio frequency signal is equal to that of the radio frequency signal.
  • the incident phase is the same, or the reflected phase of the first radio frequency signal is not equal to the incident phase of the first radio frequency signal, but the difference between the reflected phase of the first radio frequency signal and the incident phase of the first radio frequency signal Located within the first preset phase range, so that the first radio frequency signal can penetrate the radome 200.
  • the value of the first preset phase is -90° ⁇ 0, and 0 ⁇ +90°.
  • the resonant structure 230 when the first radio frequency signal is incident on the resonant structure 230, the difference between the reflected phase of the first radio frequency signal and the incident phase of the first radio frequency signal lies between -90° and +90° Within the range of °°, the resonant structure 230 has an in-phase reflection characteristic for the first radio frequency signal.
  • the in-phase reflection characteristic of the resonant structure 230 on the second radio frequency signal means that when the second radio frequency signal is incident on the resonant structure 230, the reflection phase of the second radio frequency signal is equal to that of the second radio frequency signal.
  • the incident phase of the second radio frequency signal is the same, or the reflected phase of the second radio frequency signal is different from the incident phase of the second radio frequency signal, but the reflected phase of the second radio frequency signal is equal to that of the second radio frequency signal.
  • the difference in the incident phase is within the second preset phase range, so that the second radio frequency signal can penetrate the radome 200. Understandably, the range of the first preset phase range may be the same as the range of the second preset phase range, or may be different.
  • the value of the second preset phase is -90° ⁇ 0, and 0 ⁇ +90°.
  • the difference between the reflected phase of the second radio frequency signal and the incident phase of the second radio frequency signal is between -90° and +90°
  • the resonant structure 230 has an in-phase reflection characteristic for the second radio frequency signal.
  • the resonant structure 230 has in-phase reflection characteristics for the first radio frequency signal of the first preset frequency band, and can pass the first radio frequency signal of the first preset frequency band; accordingly, the resonance The structure 230 also has in-phase reflection characteristics for the second radio frequency signal of the second preset frequency band, and can pass the second radio frequency signal of the second preset frequency band, so that the antenna device 10 can work in two frequency bands. Further, the first radio frequency signal and the second radio frequency signal passing through the radome 200 have better directivity and higher gain (see Fig.
  • the antenna device of the present application is beneficial to improve the communication performance of the electronic device to which the antenna device 10 is applied.
  • the substrate 210 includes a first surface 211 and a second surface 212 opposite to each other.
  • the first surface 211 is away from the antenna module 100 compared to the second surface 212.
  • the resonant structure 230 is disposed on the first surface 211.
  • the antenna device 10 includes an antenna module 100 and a radome 200.
  • the antenna module 100 is used to transmit and receive a first radio frequency signal of a first predetermined frequency band in a first predetermined direction range, and is also used to transmit and receive a second radio frequency signal of a second predetermined frequency band in a second predetermined direction range, so
  • the first preset frequency band is smaller than the second preset frequency band, and there is an overlap area between the first preset direction range and the second preset direction range.
  • the radome 200 is spaced apart from the antenna module 100.
  • the radome 200 includes a substrate 210 and a resonant structure 230 carried on the substrate 210, and the resonant structure 230 is at least partially located in the overlapping area.
  • the resonant structure 230 has an in-phase reflection characteristic for the first radio frequency signal and an in-phase reflection characteristic for the second radio frequency signal.
  • the substrate 210 includes a first surface 211 and a second surface 212 opposite to each other.
  • the first surface 211 is away from the antenna module 100 compared to the second surface 212.
  • the resonant structure 230 is disposed on the second surface 212.
  • the antenna device 10 includes an antenna module 100 and a radome 200.
  • the antenna module 100 is used to transmit and receive a first radio frequency signal of a first predetermined frequency band in a first predetermined direction range, and is also used to transmit and receive a second radio frequency signal of a second predetermined frequency band in a second predetermined direction range, so
  • the first preset frequency band is smaller than the second preset frequency band, and there is an overlap area between the first preset direction range and the second preset direction range.
  • the radome 200 is spaced apart from the antenna module 100.
  • the radome 200 includes a substrate 210 and a resonant structure 230 carried on the substrate 210, and the resonant structure 230 is at least partially located in the overlapping area.
  • the resonant structure 230 has an in-phase reflection characteristic for the first radio frequency signal and an in-phase reflection characteristic for the second radio frequency signal.
  • the substrate 210 includes a first surface 211 and a second surface 212 opposite to each other.
  • the first surface 211 is away from the antenna module 100 compared to the second surface 212.
  • the resonant structure 230 is embedded in the substrate 210 and is located between the first surface 211 and the second surface 212.
  • the antenna device 10 includes an antenna module 100 and a radome 200.
  • the antenna module 100 is used to transmit and receive a first radio frequency signal of a first predetermined frequency band in a first predetermined direction range, and is also used to transmit and receive a second radio frequency signal of a second predetermined frequency band in a second predetermined direction range, so
  • the first preset frequency band is smaller than the second preset frequency band, and there is an overlap area between the first preset direction range and the second preset direction range.
  • the radome 200 is spaced apart from the antenna module 100.
  • the radome 200 includes a substrate 210 and a resonant structure 230 carried on the substrate 210, and the resonant structure 230 is at least partially located in the overlapping area.
  • the resonant structure 230 has an in-phase reflection characteristic for the first radio frequency signal and an in-phase reflection characteristic for the second radio frequency signal.
  • the resonant structure 230 is attached to the carrier film 220, and the carrier film 220 is attached to the substrate 210.
  • the carrier film 220 can be, but is not limited to, a plastic (Polyethylene terephthalate, PET) film, a flexible circuit board, a printed circuit board, or the like.
  • the PET film can be, but is not limited to, a color film, an explosion-proof film, and the like.
  • the substrate 210 includes a first surface 211 and a second surface 212 opposite to each other. The first surface 211 is away from the antenna module 100 compared to the second surface 212.
  • the resonant structure 230 is attached to the second surface 212 through the carrier film 220 as an example for illustration. It can be understood that, in other embodiments, the resonant structure 230 may also be attached to the first surface 211 via the carrier film 220.
  • FIG. 5 is a cross-sectional view of the antenna device according to the fifth embodiment of the present application.
  • the antenna device 10 includes an antenna module 100 and a radome 200.
  • the antenna module 100 is used to transmit and receive a first radio frequency signal of a first predetermined frequency band in a first predetermined direction range, and is also used to transmit and receive a second radio frequency signal of a second predetermined frequency band in a second predetermined direction range, so
  • the first preset frequency band is smaller than the second preset frequency band, and there is an overlap area between the first preset direction range and the second preset direction range.
  • the radome 200 is spaced apart from the antenna module 100.
  • the radome 200 includes a substrate 210 and a resonant structure 230 carried on the substrate 210, and the resonant structure 230 is at least partially located in the overlapping area.
  • the resonant structure 230 has an in-phase reflection characteristic for the first radio frequency signal and an in-phase reflection characteristic for the second radio frequency signal.
  • the substrate 210 includes a first surface 211 and a second surface 212 opposite to each other.
  • the first surface 211 is away from the antenna module 100 compared to the second surface 212.
  • Part of the resonant structure 230 is exposed on the first surface 211, and the remaining resonant structure 230 is embedded in the substrate 210.
  • the resonant structure 230 is partially disposed on the first surface 211 of the substrate 210, and a portion of the resonant structure 230 is disposed on the second surface 212 of the substrate 210.
  • the part of the resonant structure 230 disposed on the first surface 211 of the substrate 210 includes: the part of the resonant structure 230 is directly disposed on the first surface 211 of the substrate 210, or the part of the resonant structure 230 is directly disposed on the first surface 211 of the substrate 210.
  • the part is attached to the second surface 211 through the carrier film 220.
  • the part of the resonant structure 230 disposed on the second surface 212 of the substrate 210 includes: the part of the resonant structure 230 is disposed on the second surface 212 of the substrate 210, or the resonant structure The part of 230 is attached to the second surface through the carrier film 220.
  • the material of the resonant structure 230 is metal or non-metal conductive material.
  • the resonant structure 230 may be transparent or non-transparent.
  • the resonant structure 230 may be integrated or non-integrated.
  • the material of the substrate 210 is at least one or a combination of plastic, glass, sapphire, and ceramic.
  • FIG. 6 is a cross-sectional view of the resonant structure provided by the first embodiment of the application.
  • the resonant structure 230 can be incorporated into the antenna device 10 provided in any of the foregoing embodiments.
  • the resonant structure 230 includes one or more resonant layers 230a.
  • the resonant structure 230 includes multiple resonant layers 230a, the multiple resonant layers 230a are stacked in a predetermined direction and arranged at intervals.
  • the resonant structure 230 includes multiple resonant layers 230a, a dielectric layer 210a is provided between two adjacent resonant layers 230a, and the outermost resonant layer 230a may or may not cover the dielectric layer 210a, All dielectric layers constitute the substrate 210.
  • the resonant structure 230 includes three resonant layers 230a, and two dielectric layers 210a are taken as an example for illustration.
  • the preset direction is parallel to the main lobe direction of the first radio frequency signal or the second radio frequency signal. When the preset direction presets that the main lobe direction of the first radio frequency signal is parallel, the radiation performance of the first radio frequency signal is better, and the preset direction means that the radiation intensity of the first radio frequency signal is the largest Beam.
  • FIG. 7 is a distribution diagram of the resonant structure provided by the second embodiment of this application.
  • the resonant structure 230 can be incorporated into the antenna device 10 provided in any of the foregoing embodiments.
  • the resonant structure 230 includes a plurality of resonant units 230b, and the plurality of resonant units 230b are periodically arranged.
  • the periodic arrangement of the resonant units 230b can make the resonant structure 230 easier to prepare during preparation.
  • FIG. 8 is a distribution diagram of the resonant structure provided by the third embodiment of this application.
  • the resonant structure 230 can be incorporated into the antenna device 10 provided in any of the foregoing embodiments.
  • the resonant structure 230 includes a plurality of resonant units 230b, and the plurality of resonant units 230b are arranged non-periodically.
  • the resonant structure 230 at least satisfies:
  • ⁇ R1 is the difference between the reflected phase and incident phase of the resonant structure 230 to the first radio frequency signal
  • ⁇ 1 is the wavelength of the first radio frequency signal in the air
  • ⁇ R2 is the resonance The difference between the reflected phase and the incident phase of the second radio frequency signal by the structure 230
  • ⁇ 2 is the wavelength of the second radio frequency signal in the air
  • N is a positive integer.
  • the conditions for the radome 200 to achieve resonance are:
  • h 1 is the length of the line segment from the radiation surface of the radiation surface of the antenna module 100 to the surface of the resonant structure 230 facing the antenna module 100, and the center line is perpendicular to the The straight line of the radiation surface of the antenna module 100
  • ⁇ R1 is the difference between the reflected phase and the incident phase of the first radio frequency signal by the resonant structure 230
  • ⁇ 1 is the difference between the first radio frequency signal in the air Wavelength
  • N is a positive integer.
  • the distance from the radiation surface of the antenna module 100 to the surface of the resonant structure 230 facing the antenna module 100 is the shortest. Therefore, the thickness of the antenna device 10 can be made small.
  • the thickness of the electronic device can be made smaller.
  • the selection of h 1 can enhance the directivity and gain of the beam of the first radio frequency signal, that is, the resonant structure 230 can compensate for the loss of the first radio frequency signal during transmission, so that the first radio frequency signal can be A radio frequency signal has a long transmission distance. Therefore, the antenna device of the present application is beneficial to improve the communication performance of the electronic device to which the antenna device 10 is applied.
  • the structure of the resonant structure 230 in the antenna device 10 of this embodiment is simple, which can improve the product competitiveness of the antenna device 10.
  • the maximum value of the directivity coefficient of the first radio frequency signal transmitted through the radome 200 is:
  • D 1max is the directivity coefficient of the first radio frequency signal
  • S 11 is the reflectivity coefficient of the first radio frequency signal
  • the conditions for the radome 200 to achieve resonance are:
  • h 2 is the length of the line segment from the radiating surface of the radiating surface of the antenna module 100 to the surface of the resonant structure 230 facing the antenna module 100, and the center line is perpendicular to the antenna module.
  • the straight line of the radiation surface of the group 100, ⁇ R2 is the difference between the reflected phase and the incident phase of the second radio frequency signal by the resonant structure 230, and ⁇ 2 is the wavelength of the second radio frequency signal in the air, N is a positive integer.
  • ⁇ R2 0, the resonant structure 230 has in-phase reflection characteristics for the second radio frequency signal, The size of h 2 is greatly reduced.
  • the distance from the radiation surface of the antenna module 100 to the surface of the resonant structure 230 facing the antenna module 100 is the shortest. Therefore, the thickness of the antenna device 10 can be made small.
  • the thickness of the electronic device can be made smaller.
  • the selection of h 2 can enhance the directionality and gain of the beam of the second radio frequency signal, that is, the resonant structure 230 can compensate for the loss of the second radio frequency signal during transmission, so that the first radio frequency signal can be 2.
  • the radio frequency signal has a long transmission distance. Therefore, the antenna device of the present application is beneficial to improve the communication performance of the electronic device to which the antenna device 10 is applied.
  • the structure of the resonant structure 230 in the antenna device 10 of this embodiment is simple, which can improve the product competitiveness of the antenna device 10.
  • the maximum value of the directivity coefficient of the second radio frequency signal transmitted through the radome 200 is:
  • D 2max is the directivity coefficient of the first radio frequency signal
  • S '11 of the reflection coefficient of the second radio frequency signal is the directivity coefficient of the first radio frequency signal
  • the resonant structure 230 has an in-phase reflection characteristic for the first radio frequency signal and an in-phase reflection characteristic for the second radio frequency signal, thereby realizing dual-frequency in-phase reflection.
  • the radome 200 has an in-phase reflection characteristic for the first radio frequency signal.
  • the second radio frequency signal has a larger gain, and the distance between the antenna cover 200 and the antenna module 100 can be kept relatively close.
  • FIG. 9 is a cross-sectional view of the resonant structure provided by the fourth embodiment of this application.
  • the resonant structure 230 can be incorporated into the antenna device 10 provided in any of the foregoing embodiments.
  • the resonant structure 230 includes a first resonator structure 231 and a second resonator structure 232 arranged at intervals.
  • the first resonator structure 231 has an in-phase reflection characteristic for the first radio frequency signal
  • the second resonator structure 232 has an in-phase reflection characteristic for the second radio frequency signal.
  • the in-phase reflection characteristic of the first resonator structure 231 on the first radio frequency signal means that when the first radio frequency signal is incident on the first resonator structure 231, the first radio frequency signal
  • the reflected phase of the first radio frequency signal is the same as the incident phase of the first radio frequency signal, or the reflected phase of the first radio frequency signal is different from the incident phase of the first radio frequency signal, but the reflected phase of the first radio frequency signal is different from the incident phase of the first radio frequency signal.
  • the difference in the incident phase of the first radio frequency signal is within a first preset phase range, so that the first radio frequency signal can penetrate the radome 200. Please refer to the previous description for the first preset phase range, which will not be repeated here.
  • the in-phase reflection characteristic of the second resonator structure 232 on the second radio frequency signal means that when the second radio frequency signal is incident on the second resonator structure 232, the second radio frequency signal
  • the reflected phase of the second radio frequency signal is the same as the incident phase of the second radio frequency signal, or the reflected phase of the second radio frequency signal is different from the incident phase of the second radio frequency signal but the reflected phase of the second radio frequency signal is the same as the incident phase of the second radio frequency signal.
  • the difference in the incident phase of the second radio frequency signal is within a second preset phase range, so that the second radio frequency signal can penetrate the radome 200. Please refer to the previous description for the second preset phase range, and will not be repeated here.
  • first resonator structure 231 and the second resonator structure 232 may be completely different layers; or, part of the first resonator structure 231 and part of the second resonator structure 232 The structure is in different layers, and the other part of the first resonator structure 231 and the part of the second resonator structure 232 are arranged in the same layer.
  • the first resonator structure 231 in the antenna device 10 in this embodiment has in-phase reflection characteristics for the first radio frequency signal of the first preset frequency band, and can pass the first radio frequency signal of the first preset frequency band; accordingly, the The second resonator structure 232 has in-phase reflection characteristics for the second radio frequency signal of the second preset frequency band, and can obtain the second radio frequency signal through the second preset frequency band, so that the antenna device 10 can work in two frequency bands. It is beneficial to improve the working performance of the antenna device 10.
  • FIG. 10 is a schematic top view of a resonant structure provided by a fifth embodiment of this application
  • FIG. 11 is a perspective view of a resonant structure provided by a fifth embodiment of this application
  • the resonant structure 230 includes a first resonant layer 235 and a second resonant layer 236 that are stacked. It should be noted that, in order to conveniently reflect the correspondence between the first resonant layer 235 in FIG. 10 and the second resonant layer 236 in FIG. 11, the second resonant layer 236 shown in FIG. 11 is also the same as that in FIG.
  • the first resonant layer 235 is away from the antenna module 100 compared to the second resonant layer 236.
  • the first resonant layer 235 includes periodically arranged first resonant units 2351 (in the figure, a first A resonant unit 2351 for illustration), the first resonant unit 2351 includes a first resonant plate 2311.
  • the second resonant layer 236 includes second resonant units 2356 arranged periodically (in the figure as a second resonant unit 2356 for illustration), the second resonant unit 2356 includes a second resonant plate 2312.
  • the first resonant plate 2311 and the second resonant plate 2312 are arranged opposite to each other, and the first resonant plate 2311 and the second resonant plate 2312 are conductive patches, and satisfy:
  • W low_f is the side length of the first resonant plate 2311
  • L low_f is the side length of the second resonant plate 2312
  • the first resonator structure 231 includes at least the first resonant plate 2311 and the second resonant plate 2312.
  • the first resonant plate 2311 and the second resonant plate 2312 are arranged opposite to each other, which means that the first resonant plate 2311 and the second resonant plate 2312 are opposite to each other, and the first resonant plate 2311 is opposite to the second resonant plate 2312. 2311 and the second resonant plate 2312 at least partially overlap.
  • the orthographic projection of the second resonant plate 2312 on the plane where the first resonant plate 2311 is located at least partially overlaps with the area where the first resonant plate 2311 is located.
  • the orthographic projection of the second resonant plate 2312 on the plane where the first resonant plate 2311 is located falls within the range of the area where the first resonant plate 2311 is located.
  • the first resonant plate 2311 and the second resonant plate 2312 are both conductive patches and do not include a hollow structure.
  • the shapes of the first resonant plate 2311 and the second resonant plate 2312 may be square, polygon, or the like.
  • the first resonant plate 2311 and the second resonant plate 2312 are square as an example.
  • the structural form of the first resonator structure 231 in this embodiment can increase the gain of the first radio frequency signal of the first preset frequency band.
  • the first resonant unit 2351 includes a third resonant plate 2321, the third resonant plate 2321 and the first resonant plate 2311 are spaced apart, and the side length of the third resonant plate 2321 is smaller than that of the first resonant plate 2311.
  • the second resonant unit 2356 includes a fourth resonant plate 2322, the fourth resonant plate 2322 and the second resonant plate 2312 are spaced apart, and the side length of the fourth resonant plate 2322 is smaller than that of the second resonant plate 2312 The side length.
  • the fourth resonant plate 2322 and the third resonant plate 2321 are arranged opposite to each other.
  • the third resonant sheet 2321 and the fourth resonant sheet 2322 are conductive patches, and satisfy:
  • W high_f is the side length of the third resonant plate 2321
  • L high_f is the side length of the fourth resonant plate 2322
  • the second resonator resonant structure 232 includes at least the third resonant plate 2321 and the fourth resonator ⁇ 2322.
  • the structure of the second resonator structure 232 in this embodiment can increase the gain of the second radio frequency signal of the second preset frequency band.
  • the fourth resonant plate 2322 and the third resonant plate 2321 are arranged opposite to each other, which means that the fourth resonant plate 2322 and the third resonant plate 2321 are opposite to each other, and the fourth resonant plate 2322 is opposite to the third resonant plate 2321.
  • 2322 and the third resonant plate 2321 at least partially overlap.
  • the orthographic projection of the fourth resonant plate 2322 on the plane where the third resonant plate 2321 is located at least partially overlaps with the area where the third resonant plate 2322 is located.
  • the orthographic projection of the fourth resonant plate 2322 on the plane where the third resonant plate 2321 is located falls within the range of the area where the third resonant plate 2321 is located.
  • the third resonant sheet 2321 and the fourth resonant sheet 2322 are both conductive patches and do not include a hollow structure.
  • the shapes of the third resonant plate 2321 and the fourth resonant plate 2322 may be square, polygon, or the like. In the schematic diagram of this embodiment, the third resonant plate 2321 and the fourth resonant plate 2322 are square as an example.
  • the structure of the second resonator structure 232 in this embodiment can increase the gain of the second radio frequency signal of the second preset frequency band.
  • the first resonant unit 2351 further includes another first resonant plate 2311 and another third resonant plate 2321.
  • the two first resonant plates 2311 are diagonally and spaced apart, the side length of the third resonant plate 2321 is smaller than the side length of the first resonant plate 2311, and the two third resonant plates 2321 are diagonally and spaced apart.
  • the resonant structure 230 in this embodiment can further increase the gain of the first radio frequency signal of the first preset frequency band.
  • the centers of the two first resonant plates 2311 coincide with the centers of the two third resonant plates 2321.
  • the resonant structure 230 in this embodiment can further increase the gain of the first radio frequency signal of the first preset frequency band.
  • the second resonant unit 2356 further includes another second resonant plate 2312 and another fourth resonant plate 2322.
  • the two second resonant plates 2312 are diagonally and spaced apart, the two second resonant plates 2312 are diagonally and spaced apart, and the two fourth resonant plates 2322 are diagonally and spaced apart.
  • the resonant structure 230 in this embodiment can further increase the gain of the second radio frequency signal of the second preset frequency band.
  • the centers of the two second resonant plates 2312 coincide with the centers of the two fourth resonant plates 2322.
  • the resonant structure 230 in this embodiment can further increase the gain of the second radio frequency signal of the second preset frequency band.
  • FIG. 13 is a top view of the resonant structure provided by the sixth embodiment of the application
  • FIG. 14 is a perspective view of the resonant structure provided by the sixth embodiment of the application
  • FIG. 15 is a diagram Section 13 along the line II-II.
  • the resonant structure 230 includes a first resonant layer 235 and a second resonant layer 236 that are stacked. It should be noted that, in order to conveniently reflect the correspondence between the first resonant layer 235 in FIG. 13 and the second resonant layer 236 in FIG. 14, the second resonant layer 236 shown in FIG. 14 is also viewed from the same top view as in FIG.
  • the first resonant layer 235 is away from the antenna module 100 compared to the second resonant layer 236.
  • the first resonant layer 235 includes periodically arranged first resonant units 2351.
  • the first resonant units 2351 includes a first resonant plate 2311.
  • the second resonant layer 236 includes second resonant units 2356 arranged periodically, and the second resonant unit 2356 includes a second resonant plate 2312.
  • the first resonant plate 2311 and the second resonant plate 2312 are arranged opposite to each other, the first resonant plate 2311 is a conductive patch, and the second resonant plate 2312 is a conductive patch and has a penetrating through the second resonant plate.
  • the first hollow structure 231a on the two opposite surfaces of 2312 satisfies:
  • the first resonator structure 231 includes at least the first resonator plate 2311 and the second resonator plate 2312.
  • the first resonant plate 2311 and the second resonant plate 2312 are arranged opposite to each other, which means that the first resonant plate 2311 and the second resonant plate 2312 are opposite to each other, and the first resonant plate 2311 is opposite to the second resonant plate 2312. 2311 and the second resonant plate 2312 at least partially overlap.
  • the orthographic projection of the second resonant plate 2312 on the plane where the first resonant plate 2311 is located at least partially overlaps with the area where the first resonant plate 2311 is located.
  • the shape of the first resonant plate 2311 and the second resonant plate 2312 may be square, polygon, or the like.
  • the first resonant plate 2311 and the second resonant plate 2312 are square as an example, and the first hollow structure 231a is a square as an example.
  • the first hollow structure 231a may also be circular, elliptical, triangular, rectangular, hexagonal, ring-shaped, cross-shaped, or Jerusalem cross-shaped.
  • the structural form of the first resonator structure 231 in this embodiment can increase the gain of the first radio frequency signal of the first preset frequency band.
  • the second resonator plate 2312 is provided with a first hollow structure penetrating two opposite surfaces of the second resonator plate 2312 231a can change the surface current distribution on the second resonant plate 2312, thereby increasing the electrical length of the second resonant plate 2312, that is, for the first radio frequency signal of the first preset frequency band, the first hollow structure 231a is formed
  • the size of the second resonator plate 2312 is smaller than the side length of the second resonator plate 2312 without the first hollow structure 231a, and for the first radio frequency signal of the first preset frequency band, the hollow structure of the first hollow structure 231a
  • the first resonant unit 2351 includes a third resonant plate 2321, the third resonant plate 2321 and the first resonant plate 2311 are spaced apart, and the side length of the third resonant plate 2321 is smaller than that of the first resonant plate 2311.
  • the second resonant unit 2356 includes a fourth resonant plate 2322, the fourth resonant plate 2322 and the second resonant plate 2312 are spaced apart, and the side length of the fourth resonant plate 2322 is smaller than that of the second resonant plate 2312 The side length.
  • the fourth resonant plate 2322 and the third resonant plate 2321 are disposed oppositely, and the orthographic projection of the fourth resonant plate 2322 on the plane where the third resonant plate 2321 is located and the third resonant plate 2321 are located The areas overlap at least partially.
  • the third resonant sheet 2321 and the fourth resonant sheet 2322 are conductive patches, and satisfy:
  • W high_f is the side length of the third resonant plate 2321
  • L high_f is the side length of the fourth resonant plate 2322
  • the second resonator resonant structure 232 includes at least the third resonant plate 2321 and the fourth resonator ⁇ 2322.
  • the structure of the second resonator structure 232 in this embodiment can increase the gain of the second radio frequency signal of the second preset frequency band.
  • the first resonant unit 2351 further includes another first resonant plate 2311 and another third resonant plate 2321.
  • the two first resonant plates 2311 are diagonally and spaced apart, the side length of the third resonant plate 2321 is smaller than the side length of the first resonant plate 2311, and the two third resonant plates 2321 are diagonally and spaced apart.
  • the resonant structure 230 in this embodiment can further increase the gain of the first radio frequency signal of the first preset frequency band.
  • the centers of the two first resonant plates 2311 as a whole coincide with the centers of the two third resonant plates 2321 as a whole.
  • the resonant structure 230 in this embodiment can further increase the gain of the first radio frequency signal of the first preset frequency band.
  • the center of the two first resonant plates 2311 as a whole is not the respective centers of the two first resonant plates 2311, but refers to the two first resonant plates 2311 as a whole.
  • the center of this whole is for convenience Description, this whole center is recorded as the first center.
  • the center of the two third resonant plates 2321 as a whole is not the respective centers of the two third resonant plates 2321, but refers to the two third resonant plates 2321 as a whole, the center of the whole, for the convenience of description, this The center of the whole is marked as the second center, and the second center coincides with the first center.
  • the second resonant unit 2356 further includes another second resonant plate 2312 and another fourth resonant plate 2322.
  • the two second resonant plates 2312 are diagonally and spaced apart, the two second resonant plates 2312 are diagonally and spaced apart, and the two fourth resonant plates 2322 are diagonally and spaced apart.
  • the resonant structure 230 in this embodiment can further increase the gain of the second radio frequency signal of the second preset frequency band.
  • the centers of the two second resonant plates 2312 as a whole coincide with the centers of the two fourth resonant plates 2322 as a whole.
  • the resonant structure 230 in this embodiment can further increase the gain of the second radio frequency signal of the second preset frequency band.
  • the center of the two second resonant plates 2312 as a whole is not the respective centers of the two second resonant plates 2312, but refers to the two second resonant plates 2312 as a whole.
  • the center of this whole is marked as the third center.
  • the center of the two fourth resonant plates 2322 as a whole is not the respective centers of the two fourth resonant plates 2322, but refers to the two fourth resonant plates 2322 as a whole, the center of the whole, for the convenience of description, this The center of the whole is recorded as the fourth center, and the fourth center coincides with the third center.
  • FIG. 16 is a top view of the resonant structure provided by the seventh embodiment of the application
  • FIG. 17 is a perspective view of the resonant structure provided by the seventh embodiment of the application
  • FIG. 18 is a diagram Section 16 along the line III-III.
  • the resonant structure 230 includes a first resonant layer 235 and a second resonant layer 236 that are stacked. It should be noted that, in order to conveniently reflect the correspondence between the first resonant layer 235 in FIG. 16 and the second resonant layer 236 in FIG. 17, the second resonant layer 236 shown in FIG. 17 is also the same as that in FIG.
  • the first resonant layer 235 is away from the antenna module 100 compared to the second resonant layer 236.
  • the first resonant layer 235 includes periodically arranged first resonant units 2351.
  • the first resonant units 2351 includes a first resonant plate 2311.
  • the second resonant layer 236 includes second resonant units 2356 arranged periodically, and the second resonant unit 2356 includes a second resonant plate 2312.
  • the first resonant plate 2311 and the second resonant plate 2312 are arranged opposite to each other, and the orthographic projection of the second resonant plate 2312 on the plane where the first resonant plate 2311 is located and the area where the first resonant plate 2311 is located At least partially overlapping, the first resonant plate 2311 and the second resonant plate 2312 are conductive patches, and satisfy:
  • W low_f is the side length of the first resonant plate 2311
  • L low_f is the side length of the second resonant plate 2312
  • the first resonator structure 231 includes at least the first resonant plate 2311 and the second resonant plate 2312.
  • the first resonant plate 2311 and the second resonant plate 2312 are both conductive patches and do not include a hollow structure.
  • the shapes of the first resonant plate 2311 and the second resonant plate 2312 may be square, polygon, or the like.
  • the first resonant plate 2311 and the second resonant plate 2312 are square as an example.
  • the structural form of the first resonator structure 231 in this embodiment can increase the gain of the first radio frequency signal of the first preset frequency band.
  • the first resonant unit 2351 includes a third resonant plate 2321, the third resonant plate 2321 and the first resonant plate 2311 are spaced apart, and the side length of the third resonant plate 2321 is smaller than that of the first resonant plate 2311.
  • the side length of a resonant plate 2311, the second resonant unit 2356 includes a fourth resonant plate 2322, the fourth resonant plate 2322 and the second resonant plate 2312 are spaced apart, the side length of the fourth resonant plate 2322 Is smaller than the side length of the second resonant plate 2312, and the fourth resonant plate 2322 is disposed opposite to the third resonant plate 2321, and the fourth resonant plate 2322 is located on the plane where the third resonant plate 2321 is located.
  • the orthographic projection is at least partially overlapped with the area where the third resonant plate is located.
  • the third resonant plate 2321 is a conductive patch
  • the fourth resonant plate 2322 is a conductive patch and has a penetrating through the fourth resonant plate 2322.
  • W high_f is the side length of the third resonant plate 2321
  • L high_f is the side length of the fourth resonant plate 2322
  • the difference between L high_f and W high_f increases as the second hollow area increases.
  • the two-resonator resonant structure 232 at least includes the third resonant plate 2321 and the fourth resonant plate 2322.
  • the shapes of the third resonant plate 2321 and the fourth resonant plate 2322 may be square, polygon, or the like.
  • the third resonant plate 2321 and the fourth resonant plate 2322 are square as an example
  • the second hollow structure 232a is a square as an example.
  • the second hollow structure 232a may also be circular, elliptical, triangular, rectangular, hexagonal, circular, cross, or Jerusalem cross.
  • the structure of the second resonator structure 232 in this embodiment can increase the gain of the second radio frequency signal of the second preset frequency band.
  • the fourth resonant plate 2322 is provided with a second hollow structure 232a penetrating the two opposite surfaces of the fourth resonant plate 2322 to change the surface current distribution on the fourth resonant plate 2322, thereby increasing
  • the electrical length of the fourth resonant plate 2322 that is, for the second radio frequency signal of the second preset frequency band, the size of the fourth resonant plate 2322 with the second hollow structure 232a is larger than the size of the fourth resonator plate 2322 without the second hollow structure 232a.
  • the side length of the fourth resonant plate 2322 is small, and for the second radio frequency signal of the second preset frequency band, the larger the hollow area of the second hollow structure 232a, the smaller the side length of the fourth resonant plate 2322 Therefore, it is beneficial to improve the integration degree of the radome 200.
  • the first resonant unit 2351 further includes another first resonant plate 2311 and another third resonant plate 2321.
  • the two first resonant plates 2311 are diagonally and spaced apart, the side length of the third resonant plate 2321 is smaller than the side length of the first resonant plate 2311, and the two third resonant plates 2321 are diagonally and spaced apart.
  • the resonant structure 230 in this embodiment can further increase the gain of the first radio frequency signal of the first preset frequency band.
  • the centers of the two first resonant plates 2311 as a whole coincide with the centers of the two third resonant plates 2321 as a whole.
  • the resonant structure 230 in this embodiment can further increase the gain of the first radio frequency signal of the first preset frequency band.
  • the second resonant unit 2356 further includes another second resonant plate 2312 and another fourth resonant plate 2322.
  • the two second resonant plates 2312 are diagonally and spaced apart, the two second resonant plates 2312 are diagonally and spaced apart, and the two fourth resonant plates 2322 are diagonally and spaced apart.
  • the resonant structure 230 in this embodiment can further increase the gain of the second radio frequency signal of the second preset frequency band.
  • the centers of the two second resonant plates 2312 as a whole coincide with the centers of the two fourth resonant plates 2322 as a whole.
  • the resonant structure 230 in this embodiment can further increase the gain of the second radio frequency signal of the second preset frequency band.
  • FIG. 19 is a top view of the resonant structure provided by the eighth embodiment of this application
  • FIG. 20 is a perspective view of the resonant structure provided by the eighth embodiment of this application
  • FIG. 21 is a diagram Section 19 along the line IV-IV.
  • the resonant structure 230 includes a first resonant layer 235 and a second resonant layer 236 that are stacked. It should be noted that, in order to conveniently reflect the correspondence between the first resonant layer 235 in FIG. 19 and the second resonant layer in FIG. 20, the second resonant layer 236 shown in FIG. 20 is also the same as that in FIG.
  • the first resonant layer 235 is away from the antenna module 100 compared to the second resonant layer 236.
  • the first resonant layer 235 includes periodically arranged first resonant units 2351.
  • the first resonant units 2351 includes a first resonant plate 2311.
  • the second resonant layer 236 includes second resonant units 2356 arranged periodically, and the second resonant unit 2356 includes a second resonant plate 2312.
  • the first resonant plate 2311 and the second resonant plate 2312 are disposed opposite to each other, and the orthographic projection of the second resonant plate 2312 on the plane where the first resonant plate 2311 is located and the area where the first resonant plate 2311 is located At least partially overlapped, the first resonant sheet 2311 is a conductive patch, the second resonant sheet 2312 is a conductive patch and has a first hollow structure 231a penetrating two opposite surfaces of the second resonant sheet 2312, which satisfies :
  • the first resonator structure 231 includes at least the first resonator plate 2311 and the second resonator plate 2312.
  • the shape of the first resonant plate 2311 and the second resonant plate 2312 may be square, polygon, or the like.
  • the first resonant plate 2311 and the second resonant plate 2312 are square as an example
  • the first hollow structure 231a is a square as an example.
  • the structural form of the first resonator structure 231 in this embodiment can increase the gain of the first radio frequency signal of the first preset frequency band.
  • the second resonator plate 2312 is provided with a first hollow structure penetrating two opposite surfaces of the second resonator plate 2312 231a can change the surface current distribution on the second resonant plate 2312, thereby increasing the electrical length of the second resonant plate 2312, that is, for the first radio frequency signal of the first preset frequency band, the first hollow structure 231a is formed
  • the size of the second resonator plate 2312 is smaller than the side length of the second resonator plate 2312 without the first hollow structure 231a, and for the first radio frequency signal of the first preset frequency band, the hollow structure of the first hollow structure 231a
  • the first resonant unit 2351 includes a third resonant plate 2321, the third resonant plate 2321 and the first resonant plate 2311 are spaced apart, and the side length of the third resonant plate 2321 is smaller than that of the first resonant plate 2311.
  • the side length of a resonant plate 2311, the second resonant unit 2356 includes a fourth resonant plate 2322, the fourth resonant plate 2322 and the second resonant plate 2312 are spaced apart, the side length of the fourth resonant plate 2322 Is smaller than the side length of the second resonant plate 2312, and the fourth resonant plate 2322 is disposed opposite to the third resonant plate 2321, and the fourth resonant plate 2322 is located on the plane where the third resonant plate 2321 is located.
  • the orthographic projection of is at least partially overlapped with the area where the third resonant sheet 2321 is located, the third resonant sheet 2321 is a conductive patch, and the fourth resonant sheet 2322 is a conductive patch and has a penetrating through the fourth resonant sheet.
  • the second hollow structure 232a on the two opposite surfaces of 2322 satisfies:
  • W high_f is the side length of the third resonant plate 2321
  • L high_f is the side length of the fourth resonant plate 2322
  • the difference between L high_f and W high_f increases as the second hollow area increases.
  • the two-resonator resonant structure 232 at least includes the third resonant plate 2321 and the fourth resonant plate 2322.
  • the structure of the second resonator structure 232 in this embodiment can increase the gain of the second radio frequency signal of the second preset frequency band.
  • the fourth resonant plate 2322 is provided with a second hollow structure 232a penetrating the two opposite surfaces of the fourth resonant plate 2322 to change the surface current distribution on the fourth resonant plate 2322, thereby increasing
  • the electrical length of the fourth resonant plate 2322 that is, for the second radio frequency signal of the second preset frequency band, the size of the fourth resonant plate 2322 with the second hollow structure 232a is larger than the size of the fourth resonator plate 2322 without the second hollow structure 232a.
  • the side length of the fourth resonant plate 2322 is small, and for the second radio frequency signal of the second preset frequency band, the larger the hollow area of the second hollow structure 232a, the smaller the side length of the fourth resonant plate 2322 Therefore, it is beneficial to improve the integration degree of the radome 200.
  • the first resonant unit 2351 further includes another first resonant plate 2311 and another third resonant plate 2321.
  • the two first resonant plates 2311 are diagonally and spaced apart, the side length of the third resonant plate 2321 is smaller than the side length of the first resonant plate 2311, and the two third resonant plates 2321 are diagonally and spaced apart.
  • the resonant structure 230 in this embodiment can further increase the gain of the first radio frequency signal of the first preset frequency band.
  • the centers of the two first resonant plates 2311 as a whole coincide with the centers of the two third resonant plates 2321 as a whole.
  • the resonant structure 230 in this embodiment can further increase the gain of the first radio frequency signal of the first preset frequency band.
  • the second resonant unit 2356 further includes another second resonant plate 2312 and another fourth resonant plate 2322.
  • the two second resonant plates 2312 are diagonally and spaced apart, the two second resonant plates 2312 are diagonally and spaced apart, and the two fourth resonant plates 2322 are diagonally and spaced apart.
  • the resonant structure 230 in this embodiment can further increase the gain of the second radio frequency signal of the second preset frequency band.
  • the centers of the two second resonant plates 2312 as a whole coincide with the centers of the two fourth resonant plates 2322 as a whole.
  • the resonant structure 230 in this embodiment can further increase the gain of the second radio frequency signal of the second preset frequency band.
  • the first resonant plate 2311 and the second resonant plate 2312 described above are not electrically connected by the connecting member.
  • FIG. 22 is a cross-sectional view of the resonant structure provided in the ninth embodiment of this application.
  • the resonant structure 230 provided in this embodiment is basically the same as the resonant structure 230 provided in the sixth embodiment of the present application. The difference is that in this embodiment, the center of the first resonant plate 2311 is the same as the center of the second resonant plate.
  • the center of 2312 is electrically connected by conductive member 2313.
  • the first resonant plate 2311 is electrically connected to the second resonant plate 2312 through a conductive member 2313, so that the radome 200 can form a high-impedance surface, and the first radio frequency signal cannot travel along the The surface of the radome 200 propagates, so that the gain and bandwidth of the first radio frequency signal can be increased, and the backlobe can be reduced, thereby improving the communication quality of the antenna device 10 when the first radio frequency signal is used for communication.
  • the center of the first resonant plate 2311 is electrically connected to the center of the second resonant plate 2312, which can further increase the gain and bandwidth of the first radio frequency signal, reduce the backlobe, and further enhance the antenna device 10 The communication quality when the first radio frequency signal is used for communication.
  • FIG. 23 is a schematic diagram of a resonant structure provided by a tenth embodiment of this application.
  • the resonant structure 230 includes a plurality of first conductive lines 151 arranged at intervals, and a plurality of second conductive lines 161 arranged at intervals, and the plurality of first conductive lines 151 and the plurality of second conductive lines 161 are arranged to cross each other , And the plurality of first conductive lines 151 and the plurality of second conductive lines 161 are electrically connected at intersections.
  • first conductive lines 151 are arranged at intervals in the first direction
  • second conductive lines 161 are arranged at intervals in the second direction.
  • the two first conductive lines 151 arranged at intervals along the first direction intersect with the second conductive lines 161 arranged at intervals along the second direction to form a grid structure.
  • the first direction is perpendicular to the second direction. In other embodiments, the first direction is not perpendicular to the second direction. It can be understood that, among the plurality of first conductive lines 151 arranged at intervals in the first direction, the distance between two adjacent first conductive lines 151 may be the same or different.
  • the distance between two adjacent second conductive lines 161 may be the same or different.
  • the distance between any two adjacent first conductive lines 151 is equal, and any two adjacent second conductive lines
  • the distance between 161 is equal as an example.
  • a grid structure is formed between the first conductive line 151 and the second conductive line 161. Compared with the resonant structure 230 in the form of a conductive patch without a grid, it has a grid structure.
  • the surface current distribution on the resonant structure 230 of the structure is different from the surface current distribution of the resonant structure 230 without a grid structure, thereby increasing the electrical length of the resonant structure 230.
  • the radio frequency signal of the preset frequency band it has a grid
  • the size of the resonant structure 230 of the structure is smaller than that of the resonant structure 230 without a grid structure, which is beneficial to improve the integration degree of the radome 200.
  • FIG. 24 is a schematic diagram of the resonant structure provided by the eleventh embodiment of this application.
  • the resonant structure 230 includes a plurality of conductive grids 163 arranged in an array, each of the conductive grids 163 is surrounded by at least one conductive line 151, and two adjacent conductive grids 163 are at least partially multiplexed. Conductive lines 151.
  • the shape of the conductive mesh 163 can be, but is not limited to, any one of a circle, a rectangle, a triangle, a polygon, and an ellipse. When the shape of the conductive mesh 163 is a polygon, the conductive mesh The number of sides of the grid 163 is a positive integer greater than 3.
  • the shape of the conductive grid 163 is taken as an example for illustration.
  • the resonant structure 230 in this embodiment includes a plurality of conductive grids 163. Compared with the resonant structure 230 without the conductive grid 163, the surface current on the resonant structure 230 with the grid structure is different from that on the resonant structure 230 without the conductive grid. The surface current distribution of the resonant structure 230 of the 163 is different, and the electrical length of the resonant structure 230 is added. For the radio frequency signal of the preset frequency band, the resonant structure 230 with the conductive grid 163 is better than the one without the conductive grid 163. The size of the resonant structure 230 is small, which is beneficial to improve the integration degree of the radome 200.
  • FIG. 25 is a schematic diagram of a resonant structure provided by a twelfth embodiment of this application.
  • the shape of the conductive grid 163 is a regular hexagon as an example for illustration.
  • FIGS. 26-33 are structural schematic diagrams of the resonant unit in the resonant structure.
  • the resonant unit illustrated in FIG. 26 is a circular patch
  • the resonant unit illustrated in FIG. 27 is a regular hexagonal patch
  • the resonant unit 230b illustrated in FIGS. 28-33 includes a hollow structure, and the resonant unit 230b may be the aforementioned
  • the distance between the radiation surface of the resonant structure 230 facing the antenna module 100 and the radiation surface of the antenna satisfies:
  • h is the length of the line segment from the radiating surface of the radiating surface of the antenna module 100 to the surface of the resonant structure 230 facing the antenna module 100, and the center line is perpendicular to the antenna
  • the straight line of the radiation surface of the module 100, ⁇ R1 is the difference between the reflected phase and the incident phase of the first radio frequency signal by the resonant structure 230, and ⁇ 1 is the wavelength of the first radio frequency signal in the air
  • N is a positive integer.
  • the distance between the resonant structure 230 and the radiation surface of the antenna module 100 is the shortest.
  • the distance between the resonant structure 230 and the antenna module 100 is about 5.35 mm.
  • the maximum value D max of the directivity coefficient of the antenna module 100 satisfies among them, wherein, S 11 represents the amplitude of the reflection coefficient of the radome 200 to the first radio frequency signal.
  • the antenna module 100 has the maximum directivity coefficient, the directivity of the first radio frequency signal is the best.
  • the preset frequency band includes at least the 3GPP millimeter wave full frequency band.
  • FIG. 34 shows the reflection coefficient S11 curves corresponding to substrates with different dielectric constants.
  • the simulation is performed by taking the thickness of the substrate 210 of 0.55 mm as an example.
  • the horizontal axis represents frequency in GHz
  • the vertical axis represents reflection coefficient in dB.
  • curve 1 is the change curve of reflection coefficient S11 with frequency when the dielectric constant of substrate 210 is 3.5
  • curve 2 is the change curve of reflection coefficient S11 with frequency when the dielectric constant of substrate 210 is 6.8.
  • FIG. 35 shows the reflection phase corresponding to the 28 GHz radio frequency signal in the curve of the reflection phase corresponding to the substrates with different dielectric constants.
  • the simulation is performed by taking the thickness of the substrate 210 of 0.55 mm as an example.
  • the horizontal axis represents frequency in GHz
  • the vertical axis represents phase in deg.
  • curve 1 is the change curve of the reflection phase with frequency when the dielectric constant of the substrate 210 is 3.5
  • curve 2 is the change curve of the reflection phase with frequency when the dielectric constant of the substrate 210 is 6.8
  • curve 3 is When the dielectric constant of the substrate 210 is 10.9, the reflection phase varies with frequency.
  • Curve 4 is the variation of the reflection phase with frequency when the dielectric constant of the substrate 210 is 25.
  • the curve 5 is the dielectric constant of the substrate 210 is 36.
  • the reflection phase corresponding to each curve falls within the range of (-90° ⁇ -180°) or (90° ⁇ 180°), that is, dielectric substrates with different dielectric constants 210 to 28GHz radio frequency signal does not meet the in-phase reflection characteristics.
  • FIG. 36 is the reflection phase corresponding to the 39 GHz radio frequency signal in the curve of the reflection phase corresponding to the substrates with different dielectric constants.
  • the simulation is performed by taking the thickness of the substrate 210 of 0.55 mm as an example.
  • the horizontal axis represents frequency in GHz
  • the vertical axis represents phase in deg.
  • curve 1 is the change curve of the reflection phase with frequency when the dielectric constant of the substrate 210 is 3.5
  • curve 2 is the change curve of the reflection phase with frequency when the dielectric constant of the substrate 210 is 6.8
  • curve 3 is When the dielectric constant of the substrate 210 is 10.9, the reflection phase varies with frequency.
  • Curve 4 is the variation of the reflection phase with frequency when the dielectric constant of the substrate 210 is 25.
  • the curve 5 is the dielectric constant of the substrate 210 is 36.
  • the reflection phase corresponding to each curve falls within the range of (-90° ⁇ -180°) or (90° ⁇ 180°), that is, dielectric substrates with different dielectric constants 210 to 39GHz radio frequency signals do not satisfy the in-phase reflection characteristics.
  • FIG. 37 is a schematic diagram of the reflection coefficient S11 and the transmission coefficient S12 of the radome provided by this application.
  • the horizontal axis represents the frequency in GHz
  • the vertical axis represents the coefficient in dB.
  • curve 1 represents the change curve of reflection coefficient with frequency
  • curve 2 represents the change curve of transmission coefficient with frequency.
  • the transmission coefficient is relatively large
  • the reflection coefficient is relatively small. That is, for the radio frequency signals of 28 GHz and 39 GHz, the radome 200 provided in the present application can be better transmitted, that is, it has a higher transmittance.
  • FIG. 38 is a schematic diagram of the reflection phase curve of the radome provided by this application.
  • the horizontal axis represents the frequency in GHz
  • the vertical axis represents the difference between the reflected phase and the incident phase, in deg. It can be seen from this figure that at 28 GHz, the difference between the reflected phase and the incident phase is approximately 0, which satisfies the in-phase reflection characteristics.
  • the difference between the reflected phase and the incident phase is within the range of -90° to +90°, that is, the radome 200 has in-phase reflection characteristics in the n261 frequency band;
  • the difference between the reflected phase and the incident phase is within the range of -90° to +90°, that is, the radome 200 has in-phase reflection characteristics for the n260 frequency band.
  • FIG. 39 is a directional pattern of the radome provided by this application at 28 GHz and 39 GHz.
  • the length of the line segment is 2.62 mm (that is, equivalent to 28 GHz radio frequency A quarter of the wavelength of the signal propagating in the air) as an example for simulation.
  • the maximum value in the pattern is 11.7 dBi, that is, the gain of the antenna module 100 at 28 GHz is 11.7, and the antenna module 100 has a larger gain at 28 GHz.
  • the pattern of the radome 200 at 39GHz that the maximum value in the pattern is 12.2dBi, that is, the gain of the antenna module 100 at 28GHz is 11.7, and the antenna module 100 has a larger gain at 39GHz Gain.
  • FIG. 40 is a circuit block diagram of an electronic device according to an embodiment of the application.
  • the electronic device 1 includes a controller 30 and an antenna device 10.
  • the antenna device 10 is electrically connected to the controller 30, and the antenna module 100 in the antenna device 10 is used to send out a first radio frequency signal and a second radio frequency signal under the control of the controller 30.
  • FIG. 41 is a schematic structural diagram of an electronic device according to an embodiment of the application.
  • the electronic device 1 includes a battery cover 50.
  • the substrate 210 at least includes the battery cover 50.
  • the relationship between the resonant structure 230 and the battery cover 50 can refer to the positional relationship between the resonant structure 230 and the substrate 210 described above, as long as the substrate 210 described above is replaced by the battery cover 50.
  • the resonant structure 230 may be directly disposed on the inner surface of the battery cover 50; or, the resonant structure 230 may be attached to the inner surface of the battery cover 50 through a carrier film 220; or, the resonant structure 230 may be attached to the inner surface of the battery cover 50.
  • the structure 230 is directly disposed on the outer surface of the battery cover 50; alternatively, the resonant structure 230 is attached to the outer surface of the battery cover 50 through a supporting film 220; or, a part of the resonant structure 230 is disposed on the outer surface of the battery cover 50.
  • the inner surface of the battery cover 50, and a part of the resonant structure 230 is disposed on the outer surface of the battery cover 50; or, the resonant structure 230 is partially embedded in the battery cover 50.
  • the part of the resonant structure 230 disposed on the inner surface of the battery cover 50 includes: the part is directly disposed on the inner surface, or the part is disposed on the inner surface through the carrier film 220.
  • the part of the resonant structure 230 disposed on the outer surface of the battery cover 50 includes: the part of the resonant structure 230 is directly disposed on the outer surface of the battery cover 50, or the part of the resonant structure 230 is directly disposed on the outer surface of the battery cover 50.
  • Part of the support film 220 is provided on the outer surface of the battery cover 50.
  • the battery cover 50 generally includes a back plate 510 and a frame 520 connected to the periphery of the back plate 510 by bending.
  • the resonant structure 230 may be provided corresponding to the back plate 510, or may be provided corresponding to the frame 520. In this embodiment, the resonant structure 230 is provided corresponding to the back plate 510 as an example for illustration.
  • the electronic device 1 in this embodiment further includes a screen 70 which is arranged at the opening of the battery cover 50.
  • the screen 70 is used to display text, images, videos, and the like.
  • FIG. 42 is a schematic structural diagram of an electronic device according to an embodiment of the application.
  • the electronic device 1 further includes a screen 70, the substrate 210 includes at least the screen 70, the screen 70 includes a cover plate 710 and a display module 730 laminated with the cover plate 710, and the resonant structure 230 is located at Between the cover plate 710 and the display module 730.
  • the display module 730 can be, but is not limited to, a liquid crystal display module or an organic light emitting diode display module.
  • the screen 70 can be, but is not limited to, a liquid crystal display or an organic light emitting diode display.
  • the display module 730 and the cover plate 710 are usually separate modules, and the resonant structure 230 is arranged between the cover plate 710 and the display module 730 to reduce The integration difficulty of the resonant structure 230 in the screen 70 is difficult.
  • the electronic device 1 further includes a battery cover 50, and the screen 70 is disposed at the opening of the battery cover 50.
  • the battery cover 50 generally includes a back plate 510 and a frame 520 connected to the periphery of the back plate 510 by bending.
  • the resonant structure 230 is located on the surface of the cover plate 710 facing the display module 730.
  • the resonant structure 230 located on the surface of the cover plate 710 facing the display module 730 can reduce the formation of the resonant structure 230 compared to the resonant structure 230 disposed in the display module 730. Due to the difficulty of the cover 710.

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Abstract

本申请提供了一种天线装置及电子设备。所述天线装置包括天线模组及天线罩。所述天线模组用于朝第一预设方向范围收发第一预设频段的第一射频信号，还用于朝第二预设方向范围收发第二预设频段的第二射频信号，所述第一预设频段小于所述第二预设频段，且所述第一预设方向范围与所述第二预设方向范围存在交叠区域；所述天线罩与所述天线模组间隔设置，所述天线罩包括基板和承载于所述基板的谐振结构，所述谐振结构至少部分位于所述交叠区域内；所述谐振结构至少对第一射频信号具有同相反射特性且对所述第二射频信号具有同相反射特性。本申请的天线装置具有较高的增益，当所述天线装置应用于所述电子设备时，所述电子设备具有较好的通信性能。

Description

天线装置及电子设备 技术领域
本申请涉及电子设备领域，尤其涉及一种天线装置及电子设备。
背景技术
随着移动通信技术的发展，传统的第四代(4th-Generation，4G)移动通信已经不能够满足人们的要求。第五代(5th-Generation，5G)移动通信由于具有较高的通信速度，可而备受用户青睐。比如，利用5G移动通信传输数据时的传输速度比4G移动通信传输数据的速度快数百倍。毫米波信号是实现5G移动通信的主要手段，然而，当毫米波天线应用于电子设备时，毫米波天线通常设置于电子设备内部的收容空间中，毫米波信号通过电子设备辐射出去的增益较差，进而，使得5G毫米波信号的通信性能较差。
发明内容
本申请提供一种天线装置、及电子设备，以解决传统毫米波信号通信性能较差的技术问题。
第一方面，本申请提供了一种天线装置，所述天线装置包括：
天线模组，所述天线模组用于朝第一预设方向范围收发第一预设频段的第一射频信号，还用于朝第二预设方向范围收发第二预设频段的第二射频信号，所述第一预设频段小于所述第二预设频段，且所述第一预设方向范围与所述第二预设方向范围存在交叠区域；
天线罩，所述天线罩与所述天线模组间隔设置，所述天线罩包括基板和承载于所述基板的谐振结构，所述谐振结构至少部分位于所述交叠区域内；
所述谐振结构至少对第一射频信号具有同相反射特性且对所述第二射频信号具有同相反射特性。
第二方面，本申请提供了一种电子设备，所述电子设备包括控制器和本申请第一方面的天线装置，所述天线装置与所述控制器电连接，所述天线装置中的天线模组用于在所述控制器的控制下发出第一射频信号及第二射频信号。
附图说明
为了更清楚地说明本申请实施例的技术方案，下面将对实施方式中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图是本申请一些实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请第一实施方式提供的天线装置的剖视图。
图2为本申请第二实施方式提供的天线装置的剖视图。
图3为本申请第三实施方式提供的天线装置的剖视图。
图4为本申请第四实施方式提供的天线装置的剖视图。
图5为本申请第五实施方式提供的天线装置的剖视图。
图6为本申请第一实施方式提供的谐振结构的剖视图。
图7为本申请第二实施方式提供的谐振结构的分布图。
图8为本申请第三实施方式提供的谐振结构的分布图。
图9为本申请第四实施方式提供的谐振结构的剖视图。
图10为本申请第五实施方式提供的谐振结构的俯视图。
图11为本申请第五实施方式提供的谐振结构的透视图。
图12为图10中沿I-I线的剖视图。
图13为本申请第六实施方式提供的谐振结构的俯视图。
图14为本申请第六实施方式提供的谐振结构的透视图。
图15为图13中沿II-II线的剖视图。
图16为本申请第七实施方式提供的谐振结构的俯视图。
图17为本申请第七实施方式提供的谐振结构的透视图。
图18为图16中沿III-III线的剖视图。
图19为本申请第八实施方式提供的谐振结构的俯视图。
图20为本申请第八实施方式提供的谐振结构的透视图。
图21为图19中沿IV-IV线的剖视图。
图22为本申请第九实施方式中提供的谐振结构的剖视图。
图23为本申请第十实施方式提供的谐振结构的示意图。
图24为本申请第十一实施方式提供的谐振结构的示意图。
图25为本申请第十二实施方式提供的谐振结构的示意图。
图26-图33为谐振结构中的谐振单元的结构示意图。
图34为不同介电常数的基板对应的反射系数S11曲线。
图35为不同介电常数的基板对应的反射相位的曲线中28GHz的射频信号对应的反射相位。
图36为不同介电常数的基板对应的反射相位的曲线中39GHz的射频信号对应的反射相位。
图37为本申请提供的天线罩的反射系数S11及透射系数S12的曲线示意图。
图38为本申请提供的天线罩的反射相位曲线示意图。
图39为本申请提供的天线罩在28GHz及39GHz的方向性方向图。
图40为本申请一实施方式提供的电子设备电路框图。
图41为本申请一实施方式提供的电子设备的结构示意图。
图42为本申请一实施方式提供的电子设备的结构示意图。
具体实施方式
第一方面，本申请实施例提供一种天线装置，所述天线装置包括：
天线模组，所述天线模组用于朝第一预设方向范围收发第一预设频段的第一射频信号，还用于朝第二预设方向范围收发第二预设频段的第二射频信号，所述第一预设频段小于所述第二预设频段，且所述第一预设方向范围与所述第二预设方向范围存在交叠区域；
天线罩，所述天线罩与所述天线模组间隔设置，所述天线罩包括基板和承载于所述基板的谐振结构，所述谐振结构至少部分位于所述交叠区域内；
所述谐振结构至少对第一射频信号具有同相反射特性且对所述第二射频信号具有同相反射特性。
其中，所述谐振结构至少满足：
Figure PCTCN2020122464-appb-000001
其中，φ R1为所述谐振结构对所述第一射频信号的反射相位与入射相位之间的差值，λ 1为所述第一射频信号在空气中的波长；φ R2为所述谐振结构对所述第二射频信号的反射相位与入射相位之间的差值，λ 2为所述第二射频信号在空气中的波长，N为正整数。
其中，所述谐振结构包括间隔设置的第一谐振子结构及第二谐振子结构，所述第一谐振子结构对所述第一射频信号具有同相反射特性，所述第二谐振结构对所述第二射频信号具有同相反射特性。
其中，所述谐振结构包括层叠设置的第一谐振层及第二谐振层，所述第一谐振层相较于所述第二谐振层背离所述天线模组，所述第一谐振层包括周期性排布的第一谐振单元，所述第一谐振单元包括第一谐振片，所述第二谐振层包括周期性排布的第二谐振单元，所述第二谐振单元包括第二谐振片，所述第一谐振片及所述第二谐振片相对设置，且所述第二谐振片在所述第一谐振片所在平面的正投影与所述第一谐振片所在的区域至少部分重合，所述第一谐振片及所述第二谐振片均为导电贴片，且满足：
L low_f≤W low_f
其中，W low_f为第一谐振片的边长，L low_f为第二谐振片的边长，所述第一谐振子结构至少包括所述第一谐振片及所述第二谐振片。
其中，所述谐振结构包括层叠设置的第一谐振层及第二谐振层，所述第一谐振层相较于所述第二谐振层背离所述天线模组，所述第一谐振层包括周期性排布的第一谐振单元，所述第一谐振单元包括第一谐振片，所述第二谐振层包括周期性排布的第二谐振单元，所述第二谐振单元包括第二谐振片，所述第一谐振片与所述第二谐振片相对设置，且所述第二谐振片在所述第一谐振片所在平面的正投影与所述第一谐振片所在的区域至少部分重合，所述第一谐振片为导电贴片，所述第二谐振片为导电贴片且具有贯穿所述第二谐振片相对的两个表面的第一镂空结构，满足：
L low_f≥W low_f
其中，W low_f为第一谐振片的边长，L low_f为第二谐振片的边长，L low_f与W low_f的差值随着所述第一镂空结构的面积的增大而增大，所述第一谐振子结构至少包括所述第一谐振片及所述第二谐振片。
其中，所述第一谐振单元包括第三谐振片，所述第三谐振片与所述第一谐振片间隔设置，所述第三谐振片的边长小于所述第一谐振片的边长，所述第二谐振单元包括第四谐振片，所述第四谐振片与所述第二谐振片间隔设置，所述第四谐振片的边长小于所述第二谐振片的边长，且所述第四谐振片与所述第三谐振片相对设置，且所述第四谐振片在所述第三谐振片所在平面的正投影与所述第三谐振片所在的区域至少部分重合，所述第三谐振片及所述第四谐振片均为导电贴片，且满足：
L high_f≤W high_f
其中，W high_f为第三谐振片的边长，L high_f为第四谐振片的边长，所述第二谐振子谐振结构至少包括所述第三谐振片及所述第四谐振片。
其中，所述第一谐振单元包括第三谐振片，所述第三谐振片与所述第一谐振片间隔设置，所述第三谐振片的边长小于所述第一谐振片的边长，所述第二谐振单元包括第四谐振片，所述第四谐振片与所述第二谐振片间隔设置，所述第四谐振片的边长小于所述第二谐振片的边长，且所述第四谐振片与所述第三谐振片相对设置，且所述第四谐振片在所述第三谐振片所在平面的正投影与所述第三谐振片所在的区域至少部分重合，所述第三谐振片为导电贴片，所述第四谐振片为导电贴片且具有贯穿所述第四谐振片相对的两个表面的第二镂空结构，满足：
L high_f≥W high_f
其中，W high_f为第三谐振片的边长，L high_f为第四谐振片的边长，L high_f与W high_f的差值随着第二镂空面积的增大而增大，所述第二谐振子谐振结构至少包括所述第三谐振片及所述第四谐振片。
其中，所述第一谐振单元还包括另外一个第一谐振片、及另外一个第三谐振片，两个第一谐振片对角且间隔设置，所述第三谐振片的边长小于所述第一谐振片的边长，两个第三谐振片对角且间隔设置。
其中，两个第一谐振片作为一个整体的中心与两个第三谐振片作为一个整体的中心重合。
其中，所述第二谐振单元还包括另外一个第二谐振片、及另外一个第四谐振片，两个第二谐振片对角且间隔设置，两个第二谐振片对角且间隔设置，两个第四谐振片对角且间隔设置。
其中，两个第二谐振片作为一个整体的中心与两个第四谐振片作为一个整体的中心重合。
其中，所述第一谐振片的中心与所述第二谐振片的中心通过导电件电连接。
其中，谐振结构包括多条间隔排布的第一导电线路，以及多条间隔排布的第二导电线路，所述多条 第一导电线路与所述多条第二导电线路交叉设置，且所述多条第一导电线路与所述多条第二导电线路在交叉处电连接。
其中，所述谐振结构包括多个阵列设置的导电网格，每个所述导电网格由至少一条导电线路围成，相邻的两个所述导电网格至少部分复用所述导电线路。
其中，所述谐振结构面对所述天线模组的辐射面与所述天线的辐射面之间的距离满足：
Figure PCTCN2020122464-appb-000002
其中，h为所述天线模组的辐射面的中心线从所述辐射面到所述谐振结构面对所述天线模组的表面的线段长度，所述中心线为垂直所述天线模组的辐射面的直线，φ R1为所述谐振结构对所述第一射频信号的反射相位与入射相位之间的差值，λ 1为所述第一射频信号在空气中的波长，N为正整数。
其中，当φ R1＝0时，所述谐振结构面对所述天线模组的辐射面与所述天线的辐射面之间的最小距离h＝λ 1/4。
其中，所述天线模组的方向性系数的最大值D max满足
Figure PCTCN2020122464-appb-000003
其中，
Figure PCTCN2020122464-appb-000004
其中，S 11表征所述天线罩对所述第一射频信号的反射系数幅值。
其中，所述预设频段至少包括3GPP毫米波全频段。
第二方面，本申请实施例提供一种电子设备，所述电子设备包括控制器和如前面任意一项所述的天线装置，所述天线装置与所述控制器电连接，所述天线装置中的天线模组用于在所述控制器的控制下发出第一射频信号及第二射频信号。
其中，所述电子设备包括电池盖，所述基板至少包括所述电池盖，所述谐振结构直接设置在所述电池盖的内表面；或者，所述谐振结构通过承载膜贴附于所述电池盖的内表面；或者，所述谐振结构直接设置于所述电池盖的外表面；或者，所述谐振结构通过承载膜贴附于所述电池盖的外表面；或者，所述谐振结构的部分设置于所述电池盖的内表面，且所述谐振结构的部分设置于所述电池盖的外表面；或者，所述谐振结构部分内嵌于所述电池盖。
其中，所述电子设备还包括屏幕，所述基板至少包括所述屏幕，所述屏幕包括盖板及与所述盖板层叠设置的显示模组，所述谐振结构位于所述盖板与所述显示模组之间。
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有付出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
请参阅图1，图1为本申请第一实施方式提供的天线装置的剖视图。所述天线装置10包括：天线模组100及天线罩200。所述天线模组100用于朝第一预设方向范围收发第一预设频段的第一射频信号，还用于朝第二预设方向范围收发第二预设频段的第二射频信号，所述第一预设频段小于所述第二预设频段，且所述第一预设方向范围与所述第二预设方向范围存在交叠区域。所述天线罩200与所述天线模组100间隔设置，所述天线罩200包括基板210和承载于所述基板210的谐振结构230，所述谐振结构230至少部分位于所述交叠区域内。所述谐振结构230至少对第一射频信号具有同相反射特性且对所述第二射频信号具有同相反射特性。可以理解地，所述谐振结构230至少对所述第一射频信号具有同相反射特性且对所述第二射频信号具有同相反射特性，是指：所述谐振结构230对所述第一射频信号具有同相反射特性且对所述第二射频信号具有同相反射特性；或者，所述谐振结构230除了对所述第一射频信号及所述第二射频信号具有同相反射特性，还可以对所述第一射频信号及所述第二射频信号之外的其他射频信号具有同相反射特性，即，所述谐振结构230对多个射频信号具有同相反射特性。
所述第一射频信号可以为但不仅限于为毫米波频段的射频信号或者太赫兹频段的射频信号。目前，在第五代移动通信技术(5th generation wireless systems，5G)中，根据第三代合作伙伴协议(3rd Generation Partnership Project，3GPP)TS 38.101协议的规定，5G新空口(new radio，NR)主要使用两段频率：FR1频段和FR2频段。其中，FR1频段的频率范围是450MHz～6GHz，又叫sub-6GHz频段；FR2频段的频率范围是24.25GHz～52.6GHz，属于毫米波(mm Wave)频段。3GPP Release 15版本规范了目前5G毫米波频段包括：n257(26.5～29.5GHz),n258(24.25～27.5GHz),n261(27.5～28.35GHz)和n260(37～40GHz)。相应地，所述第二射频信号可以为但不仅限于为毫米波频段的射频信号或者太赫兹频段的射频信号。在一实施方式中，第一射频信号的第一预设频段可以为n261频段，第二射频信号的第二预设频段可以为n260频段。在其他实施方式中，所述第一射频信号的第一预设频段可以为n260频段，第二射频信号的第二预设频段可以为n261频段。当然，所述第一预设频段及所述第二预设频段也可以为其他频段，只要满足第一预设频段与第二预设频段不同即可。通常而言，n261频段的谐振频点为28GHz，n260频段的谐振频段为39GHz。
所述谐振结构230承载于所述基板210，所述谐振结构230可对应所述基板210的全部区域设置，也可对应所述基板210的部分区域设置。在本实施方式的示意图中，以所述谐振结构230承载于所述基板210且对应所述基板210的全部区域设置为例进行示意。所述第一预设方向范围与所述第二预设方向范围可以完全相同，所述第一预设方向范围和所述第二预设方向范围可以不同，只要满足所述第一预设方向范围与所述第二预设方向范围存在交叠区域，且所述谐振结构230至少部分位于所述交叠区域内即可。
所述谐振结构230对所述第一射频信号具有同相反射特性是指：当所述第一射频信号入射至所述谐振结构230上，所述第一射频信号的反射相位与所述射频信号的入射相位相同，或者，所述第一射频信号的反射相位与所述第一射频信号的入射相位不等但是所述第一射频信号的反射相位与所述第一射频信号的入射相位的差值位于第一预设相位范围内，以使得所述第一射频信号可穿透所述天线罩200。通常，所述第一预设相位的取值为-90°～0，以及0～+90°。换句话说，当所述第一射频信号入射至所述谐振结构230上时，所述第一射频信号的反射相位与所述第一射频信号的入射相位的差值位于-90°～+90°范围内时，所述谐振结构230对所述第一射频信号具有同相反射特性。
相应地，所述谐振结构230对所述第二射频信号具有同相反射特性是指：当所述第二射频信号入射至所述谐振结构230上，所述第二射频信号的反射相位与所述第二射频信号的入射相位相同，或者，所述第二射频信号的反射相位与所述第二射频信号的入射相位不等但是所述第二射频信号的反射相位与所述第二射频信号的入射相位的差值位于第二预设相位范围内，以使得所述第二射频信号可穿透所述天线罩200。可以理解地，所述第一预设相位范围可以和所述第二预设相位范围的范围相同，也可以不相同。通常，所述第二预设相位的取值为-90°～0，以及0～+90°。换句话说，当所述第二射频信号入射至所述谐振结构230上时，所述第二射频信号的反射相位与所述第二射频信号的入射相位的差值位于-90°～+90°范围内时，所述谐振结构230对所述第二射频信号具有同相反射特性。
本实施方式的天线装置10中所述谐振结构230对所述第一预设频段的第一射频信号具有同相反射特性，可以通过第一预设频段的第一射频信号；相应地，所述谐振结构230还对所述第二预设频段的第二射频信号具有同相反射特性，可以通过第二预设频段的第二射频信号，从而可以使得所述天线装置10工作在两个频段。进一步地，穿过所述天线罩200的第一射频信号及第二射频信号具有较好的方向性及较高的增益(仿真图见图39及其相关说明)，即，所述谐振结构230可补偿所述第一射频信号及所述第二射频信号在传输中的损耗，从而可使得所述第一射频信号及所述第二射频信号具有较长的传输距离。因此，本申请的天线装置有利于提升所述天线装置10所应用的电子设备的通信性能。
进一步地，所述基板210包括相对设置的第一表面211及第二表面212。所述第一表面211相较于所述第二表面212背离所述天线模组100。在本实施方式中，所述谐振结构230设置于所述第一表面211。
请参阅图2，图2为本申请第二实施方式提供的天线装置的剖视图。所述天线装置10包括：天线模组100及天线罩200。所述天线模组100用于朝第一预设方向范围收发第一预设频段的第一射频信号， 还用于朝第二预设方向范围收发第二预设频段的第二射频信号，所述第一预设频段小于所述第二预设频段，且所述第一预设方向范围与所述第二预设方向范围存在交叠区域。所述天线罩200与所述天线模组100间隔设置，所述天线罩200包括基板210和承载于所述基板210的谐振结构230，所述谐振结构230至少部分位于所述交叠区域内。所述谐振结构230对第一射频信号具有同相反射特性且对所述第二射频信号具有同相反射特性。
进一步地，所述基板210包括相对设置的第一表面211及第二表面212。所述第一表面211相较于所述第二表面212背离所述天线模组100。在本实施方式中，所述谐振结构230设置于所述第二表面212。
请参阅图3，图3为本申请第三实施方式提供的天线装置的结构剖视图。所述天线装置10包括：天线模组100及天线罩200。所述天线模组100用于朝第一预设方向范围收发第一预设频段的第一射频信号，还用于朝第二预设方向范围收发第二预设频段的第二射频信号，所述第一预设频段小于所述第二预设频段，且所述第一预设方向范围与所述第二预设方向范围存在交叠区域。所述天线罩200与所述天线模组100间隔设置，所述天线罩200包括基板210和承载于所述基板210的谐振结构230，所述谐振结构230至少部分位于所述交叠区域内。所述谐振结构230对第一射频信号具有同相反射特性且对所述第二射频信号具有同相反射特性。
进一步地，所述基板210包括相对设置的第一表面211及第二表面212。所述第一表面211相较于所述第二表面212背离所述天线模组100。在本实施方式中，所述谐振结构230内嵌于所述基板210，且位于所述第一表面211及所述第二表面212之间。
请参阅图4，图4为本申请第四实施方式提供的天线装置的剖视图。所述天线装置10包括：天线模组100及天线罩200。所述天线模组100用于朝第一预设方向范围收发第一预设频段的第一射频信号，还用于朝第二预设方向范围收发第二预设频段的第二射频信号，所述第一预设频段小于所述第二预设频段，且所述第一预设方向范围与所述第二预设方向范围存在交叠区域。所述天线罩200与所述天线模组100间隔设置，所述天线罩200包括基板210和承载于所述基板210的谐振结构230，所述谐振结构230至少部分位于所述交叠区域内。所述谐振结构230对第一射频信号具有同相反射特性且对所述第二射频信号具有同相反射特性。
进一步地，所述谐振结构230贴附于所述承载膜220上，所述承载膜220贴合在所述基板210上。当所述谐振结构230贴附于所述承载膜220上时，所述承载膜220可以为但不仅限于为塑料(Polyethylene terephthalate，PET)薄膜、柔性电路板、印刷电路板等。所述PET薄膜可以为但不仅限于为彩色膜、防爆膜等。所述基板210包括相对设置的第一表面211及第二表面212。所述第一表面211相较于所述第二表面212背离所述天线模组100。在本实施方式的示意图中，以所述谐振结构230通过所述承载膜220贴合于所述第二表面212上为例进行示意。可以理解地，在其他实施方式中，所述谐振结构230也可通过承载膜220贴合于所述第一表面211上。
请参阅图5，图5为本申请第五实施方式提供的天线装置的剖视图。所述天线装置10包括：天线模组100及天线罩200。所述天线模组100用于朝第一预设方向范围收发第一预设频段的第一射频信号，还用于朝第二预设方向范围收发第二预设频段的第二射频信号，所述第一预设频段小于所述第二预设频段，且所述第一预设方向范围与所述第二预设方向范围存在交叠区域。所述天线罩200与所述天线模组100间隔设置，所述天线罩200包括基板210和承载于所述基板210的谐振结构230，所述谐振结构230至少部分位于所述交叠区域内。所述谐振结构230对第一射频信号具有同相反射特性且对所述第二射频信号具有同相反射特性。
进一步地，所述基板210包括相对设置的第一表面211及第二表面212。所述第一表面211相较于所述第二表面212背离所述天线模组100。部分所述谐振结构230显露于所述第一表面211，剩余的所述谐振结构230内嵌于所述基板210。
可以理解地，在其他实施方式中，所述谐振结构230部分设置于所述基板210的第一表面211，且所述谐振结构230的部分设置于所述基板210的第二表面212。所述谐振结构230的部分设置于所述基板210的第一表面211包括：所述谐振结构230的所述部分直接设置于所述基板210的第一表面211， 或者，所述谐振结构230的所述部分通过承载膜220贴合于所述第二表面211。相应地，所述谐振结构230的部分设置于所述基板210的第二表面212包括：所述谐振结构230的所述部分设置于所述基板210的第二表面212，或者，所述谐振结构230的所述部分通过承载膜220贴合于所述第二表面。
结合前述任意实施方式提供的天线装置10，所述谐振结构230的材质为金属，或者为非金属导电材质。当所述谐振结构230的材质为非金属导电材质时，所述谐振结构230可以为透明的也可以为非透明的。所述谐振结构230可以为一体式的，也可以为非一体式的。
结合前述任意实施方式提供的天线装置10，所述基板210的材料为塑料、玻璃、蓝宝石、陶瓷的至少一种或者多种组合。
请参阅图6，图6为本申请第一实施方式提供的谐振结构的剖视图。所述谐振结构230可结合到前述任意实施方式提供的天线装置10中。所述谐振结构230包括一层或多层谐振层230a。所述谐振结构230包括多层谐振层230a时，所述多层谐振层230a在预设方向上层叠且间隔设置。当所述谐振结构230包括多层谐振层230a时，相邻的两层谐振层230a之间设置有介质层210a，最外层的谐振层230a上可覆盖介质层210a也可不覆盖介质层210a，所有的介质层构成所述基板210。在本实施方式的示意图中，所述谐振结构230包括三层谐振层230a，两层介质层210a为例进行示意。可选地，所述预设方向与所述第一射频信号或者所述第二射频信号的主瓣方向平行。当所述预设方向预设所述第一射频信号的主瓣方向平行时，所述第一射频信号的辐射性能较好，所述预设方向是指所述第一射频信号中辐射强度最大的波束。
请参阅图7，图7为本申请第二实施方式提供的谐振结构的分布图。所述谐振结构230可结合到前述任意实施方式提供的天线装置10中。所述谐振结构230包括多个谐振单元230b，所述多个谐振单元230b周期性排布。所述谐振单元230b周期性排布可使得所述谐振结构230在制备时更加容易制备出来。
请参阅图8，图8为本申请第三实施方式提供的谐振结构的分布图。所述谐振结构230可结合到前述任意实施方式提供的天线装置10中。所述谐振结构230包括多个谐振单元230b，所述多个谐振单元230b非周期性排布。
可选地，结合前述任意实施方式提供的天线装置10，所述谐振结构230至少满足：
Figure PCTCN2020122464-appb-000005
其中，φ R1为所述谐振结构230对所述第一射频信号的反射相位与入射相位之间的差值，λ 1为所述第一射频信号在空气中的波长；φ R2为所述谐振结构230对所述第二射频信号的反射相位与入射相位之间的差值，λ 2为所述第二射频信号在空气中的波长，N为正整数。
对于第一射频信号而言，由于常规的地系统为PEC，那么，当第一射频信号入射至PEC上会产生-π的相位差。因此，对于第一射频信号而言，所述天线罩200达到谐振的条件为:
Figure PCTCN2020122464-appb-000006
其中，h 1为所述天线模组100的辐射面的中心线从所述辐射面到所述谐振结构230面对所述天线模组100的表面的线段长度，所述中心线为垂直所述天线模组100的辐射面的直线，φ R1为所述谐振结构230对所述第一射频信号的反射相位与入射相位之间的差值，λ 1为所述第一射频信号在空气中的波长，N为正整数。当φ R1＝0时，所述谐振结构230对所述第一射频信号具有同相反射特性，所述h 1为最小值，
Figure PCTCN2020122464-appb-000007
极大地降低了h 1的大小，此时，对于第一射频信号而言，所述天线模组100的辐射面到所述谐振结构230面对所述天线模组100的表面的距离最近。从而可使得所述天线装置10的厚度较小。当所述天线装置10应用于所述电子设备时，可使得所述电子设备的厚度较小。本实施方式中，h 1的选取可增强第一射频信号的波束的方向性及增益，即，所述谐振结构230可补偿所述第一射频信号在传输中的损耗，从而可使得所述第一射频信号具有较长的传输距离。因此，本申请的天线装置有利于提升所述天线装置10所应用的电子设备的通信性能。另外，相较于传统技术中设计复杂电路来达到相同技术效果而言，本实施方式的天线装置10中的谐振结构230的结构简单，可提升本天线装置10的产品竞争力。
此时，所述天线罩200除了达到谐振之外，经由所述天线罩200透射出去的第一射频信号的方向性系数的最大值为：
Figure PCTCN2020122464-appb-000008
其中，D 1max为第一射频信号的方向性系数，
Figure PCTCN2020122464-appb-000009
其中，S 11为所述第一射频信号的反射性系数。
相应地，对于所述第二射频信号而言，当所述第二射频信号入射至PEC上会产生-π的相位差。因此，对于第二射频信号而言，所述天线罩200达到谐振的条件为:
Figure PCTCN2020122464-appb-000010
其中，h 2为所述天线模组100的辐射面的中心线从所述辐射面到所述谐振结构230面对天线模组100的表面的线段长度，所述中心线为垂直所述天线模组100的辐射面的直线，φ R2为所述谐振结构230对所述第二射频信号的反射相位与入射相位之间的差值，λ 2为所述第二射频信号在空气中的波长，N为正整数。当φ R2＝0时，所述谐振结构230对所述第二射频信号具有同相反射特性，
Figure PCTCN2020122464-appb-000011
极大地降低了h 2的大小，此时，对于第二射频信号而言，所述天线模组100的辐射面到所述谐振结构230面对所述天线模组100的表面的距离最近。从而可使得所述天线装置10的厚度较小。当所述天线装置10应用于所述电子设备时，可使得所述电子设备的厚度较小。本实施方式中，h 2的选取可增强第二射频信号的波束的方向性及增益，即，所述谐振结构230可补偿所述第二射频信号在传输中的损耗，从而可使得所述第二射频信号具有较长的传输距离。因此，本申请的天线装置有利于提升所述天线装置10所应用的电子设备的通信性能。另外，相较于传统技术中设计复杂电路来达到相同技术效果而言，本实施方式的天线装置10中的谐振结构230的结构简单，可提升本天线装置10的产品竞争力。
此时，所述天线罩200除了达到谐振之外，经由所述天线罩200透射出去的第二射频信号的方向性系数的最大值为：
Figure PCTCN2020122464-appb-000012
其中，D 2max为第一射频信号的方向性系数，
Figure PCTCN2020122464-appb-000013
其中，S' 11为所述第二射频信号的反射性系数。
由于所述天线装置10中h 1＝h 2，因此，可得：
Figure PCTCN2020122464-appb-000014
此时，所述谐振结构230对第一射频信号具有同相反射特性且对所述第二射频信号具有同相反射特性，从而实现了双频同相反射，所述天线罩200对于所述第一射频信号及对于所述第二射频信号均具有较大的增益，且所述天线罩200相较于所述天线模组100之间的距离可保持的比较近。当所述天线模组100应用于电子设备1(请参阅图40～图42)中时，可减小所述天线模组100所应用的电子设备1的厚度。
请参阅图9，图9为本申请第四实施方式提供的谐振结构的剖视图。所述谐振结构230可结合到前述任意实施方式提供的天线装置10中。所述谐振结构230包括间隔设置的第一谐振子结构231及第二谐振子结构232。所述第一谐振子结构231对所述第一射频信号具有同相反射特性，所述第二谐振子结构232对所述第二射频信号具有同相反射特性。
具体地，所述第一谐振子结构231对所述第一射频信号具有同相反射特性是指：当所述第一射频信号入射至所述第一谐振子结构231上，所述第一射频信号的反射相位与所述第一射频信号的入射相位相同，或者，所述第一射频信号的反射相位与所述第一射频信号的入射相位不等但是所述第一射频信号的反射相位与所述第一射频信号的入射相位的差值位于第一预设相位范围内，以使得所述第一射频信号可穿透所述天线罩200。第一预设相位范围请参阅前面描述，在此不再赘述。
相应地，所述第二谐振子结构232对所述第二射频信号具有同相反射特性是指：当所述第二射频信号入射至所述第二谐振子结构232上，所述第二射频信号的反射相位与所述第二射频信号的入射相位相同，或者，所述第二射频信号的反射相位与所述第二射频信号的入射相位不等但是所述第二射频信号的反射相位与所述第二射频信号的入射相位的差值位于第二预设相位范围内，以使得所述第二射频信号可穿透所述天线罩200。第二预设相位范围请参阅前面描述，在此不再赘述。
可以理解地，所述第一谐振子结构231及所述第二谐振子结构232可以完全不同层；或者，所述第一谐振子结构231的部分结构与所述第二谐振子结构232的部分结构不同层，且所述第一谐振子结构231的另外部分结构与所述第二谐振子结构232的部分结构同层设置。
本实施方式中的天线装置10中的第一谐振子结构231对第一预设频段的第一射频信号具有同相反射特性，可以通过第一预设频段的第一射频信号；相应地，所述第二谐振子结构232对第二预设频段的第二射频信号具有同相反射特性，可通过第二预设频段得第二射频信号，从而可以使得所述天线装置10工作在两个频段，有利于提升所述天线装置10的工作性能。
请一并参阅图10、图11及图12，图10为本申请第五实施方式提供的谐振结构的俯视图示意图；图11为本申请第五实施方式提供的谐振结构的透视图；图12为图10中沿I-I线的剖视图。在本实施方式中，所述谐振结构230包括层叠设置的第一谐振层235及第二谐振层236。需要说明的是，为了方便体现图10中的第一谐振层235和图11中的第二谐振层236之间的对应关系，图11所示的第二谐振层236也是从与图10相同的俯视角度下透视得到的，且在图11中仅示意出了所述第二谐振层236及所述基板210，而未示意出第一谐振层235。所述第一谐振层235相较于所述第二谐振层236背离所述天线模组100，所述第一谐振层235包括周期性排布的第一谐振单元2351(在图中以一个第一谐振单元2351进行示意)，所述第一谐振单元2351包括第一谐振片2311。所述第二谐振层236包括周期性排布的第二谐振单元2356(在图中以一个第二谐振单元2356进行示意)，所述第二谐振单元2356包括第二谐振片2312。所述第一谐振片2311及所述第二谐振片2312相对设置，所述第一谐振片2311及所述第二谐振片2312均为导电贴片，且满足：
L low_f≤W low_f
其中，W low_f为第一谐振片2311的边长，L low_f为第二谐振片2312的边长，所述第一谐振子结构231至少包括所述第一谐振片2311及所述第二谐振片2312。
在本实施方式中，所述第一谐振片2311及所述第二谐振片2312相对设置，是指所述第一谐振片2311与所述第二谐振片2312相对，且所述第一谐振片2311与所述第二谐振片2312至少部分重叠。换句话说，所述第二谐振片2312在所述第一谐振片2311所在平面的正投影与所述第一谐振片2311所在的区域至少部分重合。可选地，所述第二谐振片2312在所述第一谐振片2311所在平面的正投影落入所述第一谐振片2311所在的区域范围内。
在本实施方式中，所述第一谐振片2311及所述第二谐振片2312均为导电贴片且不包括镂空结构。所述第一谐振片2311与所述第二谐振片2312的形状可以为正方形，多边形等。在本实施方式的示意图中，以所述第一谐振片2311及所述第二谐振片2312为正方形为例进行示意。本实施方式中的第一谐振子结构231的结构形式可提升所述第一预设频段的第一射频信号的增益。
可选地，所述第一谐振单元2351包括第三谐振片2321，所述第三谐振片2321与所述第一谐振片2311间隔设置，所述第三谐振片2321的边长小于所述第一谐振片2311的边长。所述第二谐振单元2356包括第四谐振片2322，所述第四谐振片2322与所述第二谐振片2312间隔设置，所述第四谐振片2322的边长小于所述第二谐振片2312的边长。所述第四谐振片2322与所述第三谐振片2321相对设置。所述第三谐振片2321及所述第四谐振片2322均为导电贴片，且满足：
L high_f≤W high_f
其中，W high_f为第三谐振片2321的边长，L high_f为第四谐振片2322的边长，所述第二谐振子谐振结构232至少包括所述第三谐振片2321及所述第四谐振片2322。本实施方式中的第二谐振子结构232的结构形式可提升所述第二预设频段的第二射频信号的增益。
在本实施方式中，所述第四谐振片2322与所述第三谐振片2321相对设置，是指所述第四谐振片2322与所述第三谐振片2321相对，且所述第四谐振片2322与所述第三谐振片2321至少部分重叠。换句话说，所述第四谐振片2322在所述第三谐振片2321所在平面的正投影与所述第三谐振片2322所在的区域至少部分重合。可选地，所述第四谐振片2322在所述第三谐振片2321所在平面内的正投影落入所述第三谐振片2321所在的区域范围内。
在本实施方式中，所述第三谐振片2321及所述第四谐振片2322均为导电贴片且不包括镂空结构。所述第三谐振片2321与所述第四谐振片2322的形状可以为正方形，多边形等。在本实施方式的示意图中，以所述第三谐振片2321及所述第四谐振片2322为正方形为例进行示意。本实施方式中的第二谐振子结构232的结构形式可提升所述第二预设频段的第二射频信号的增益。
可选地，所述第一谐振单元2351还包括另外一个第一谐振片2311、及另外一个第三谐振片2321。两个第一谐振片2311对角且间隔设置，所述第三谐振片2321的边长小于所述第一谐振片2311的边长，两个第三谐振片2321对角且间隔设置。本实施方式中的谐振结构230可进一步提升第一预设频段的第一射频信号的增益。
可选地，两个第一谐振片2311的中心与两个第三谐振片2321的中心重合。本实施方式中的谐振结构230可进一步提升第一预设频段的第一射频信号的增益。
可选地，所述第二谐振单元2356还包括另外一个第二谐振片2312、及另外一个第四谐振片2322。两个第二谐振片2312对角且间隔设置，两个第二谐振片2312对角且间隔设置，两个第四谐振片2322对角且间隔设置。本实施方式中的谐振结构230可进一步提升第二预设频段的第二射频信号的增益。
可选地，两个第二谐振片2312的中心与两个第四谐振片2322的中心重合。本实施方式中的谐振结构230可进一步提升第二预设频段的第二射频信号的增益。
请一并参阅图13、图14及图15，图13为本申请第六实施方式提供的谐振结构的俯视图；图14为本申请第六实施方式提供的谐振结构的透视图；图15为图13中沿II-II线的剖视图。在本实施方式中，所述谐振结构230包括层叠设置的第一谐振层235及第二谐振层236。需要说明的是，为了方便体现图 13中的第一谐振层235和图14中的第二谐振层236的对应关系，图14中所示的第二谐振层236也是从与图13相同的俯视的角度下透视得出的，且在图14中仅示意出了所述第二谐振层236及所述基板210而未示意出第一谐振层235。所述第一谐振层235相较于所述第二谐振层236背离所述天线模组100，所述第一谐振层235包括周期性排布的第一谐振单元2351，所述第一谐振单元2351包括第一谐振片2311。所述第二谐振层236包括周期性排布的第二谐振单元2356，所述第二谐振单元2356包括第二谐振片2312。所述第一谐振片2311与所述第二谐振片2312相对设置，所述第一谐振片2311为导电贴片，所述第二谐振片2312为导电贴片且具有贯穿所述第二谐振片2312相对的两个表面的第一镂空结构231a，满足：
L low_f≥W low_f
其中，W low_f为第一谐振片2311的边长，L low_f为第二谐振片2312的边长，L low_f与W low_f的差值随着所述第一镂空结构231a的面积的增大而增大，所述第一谐振子结构231至少包括所述第一谐振片2311及所述第二谐振片2312。
在本实施方式中，所述第一谐振片2311及所述第二谐振片2312相对设置，是指所述第一谐振片2311与所述第二谐振片2312相对，且所述第一谐振片2311与所述第二谐振片2312至少部分重叠。换句话说，所述第二谐振片2312在所述第一谐振片2311所在平面的正投影与所述第一谐振片2311所在的区域至少部分重合。在本实施方式中，所述第一谐振片2311与所述第二谐振片2312的形状可以为正方形，多边形等。在本实施方式的示意图中，以所述第一谐振片2311及所述第二谐振片2312为正方形为例，且所述第一镂空结构231a为正方形为例进行示意。在其他实施方式中，所述第一镂空结构231a还可以为圆形、椭圆形、三角形、长方形、六边形、环形、十字形或者耶路撒冷十字形等形状。本实施方式中的第一谐振子结构231的结构形式可提升所述第一预设频段的第一射频信号的增益。进一步地，相较于未开设第一镂空结构231a的第二谐振片2312而言，在所述第二谐振片2312上开设贯穿所述第二谐振片2312相对的两个表面的第一镂空结构231a可改变所述第二谐振片2312上的表面电流分布，进而增加所述第二谐振片2312的电长度，即，对于第一预设频段的第一射频信号，开设第一镂空结构231a的第二谐振片2312的尺寸比未开设第一镂空结构231a的第二谐振片2312的边长小，且对于第一预设频段的第一射频信号而言，所述第一镂空结构231a的镂空面积越大，则所述第二谐振片2312的边长越小，从而有利于提升所述天线罩200的集成度。
可选地，所述第一谐振单元2351包括第三谐振片2321，所述第三谐振片2321与所述第一谐振片2311间隔设置，所述第三谐振片2321的边长小于所述第一谐振片2311的边长。所述第二谐振单元2356包括第四谐振片2322，所述第四谐振片2322与所述第二谐振片2312间隔设置，所述第四谐振片2322的边长小于所述第二谐振片2312的边长。所述第四谐振片2322与所述第三谐振片2321相对设置，且所述第四谐振片2322在所述第三谐振片2321所在的平面的正投影与所述第三谐振片2321所在的区域至少部分重合。所述第三谐振片2321及所述第四谐振片2322均为导电贴片，且满足：
L high_f≤W high_f
其中，W high_f为第三谐振片2321的边长，L high_f为第四谐振片2322的边长，所述第二谐振子谐振结构232至少包括所述第三谐振片2321及所述第四谐振片2322。本实施方式中的第二谐振子结构232的结构形式可提升所述第二预设频段的第二射频信号的增益。
可选地，所述第一谐振单元2351还包括另外一个第一谐振片2311、及另外一个第三谐振片2321。两个第一谐振片2311对角且间隔设置，所述第三谐振片2321的边长小于所述第一谐振片2311的边长，两个第三谐振片2321对角且间隔设置。本实施方式中的谐振结构230可进一步提升第一预设频段的第一射频信号的增益。
可选地，两个第一谐振片2311作为一个整体的中心与两个第三谐振片2321作为一个整体的中心重合。本实施方式中的谐振结构230可进一步提升第一预设频段的第一射频信号的增益。需要说明的是，两个第一谐振片2311作为一个整体的中心，非两个第一谐振片2311各自的中心，而是指以两第一谐振片2311为整体，这个整体的中心，为了方便描述，这个整体中心的记为第一中心。两个第三谐振片2321 的作为一个整体的中心，并非两个第三谐振片2321各自的中心，而是指以两个第三谐振片2321为整体，这个整体的中心，为了方便描述，这个整体的中心记为第二中心，所述第二中心与所述第一中心重合。
可选地，所述第二谐振单元2356还包括另外一个第二谐振片2312、及另外一个第四谐振片2322。两个第二谐振片2312对角且间隔设置，两个第二谐振片2312对角且间隔设置，两个第四谐振片2322对角且间隔设置。本实施方式中的谐振结构230可进一步提升第二预设频段的第二射频信号的增益。
可选地，两个第二谐振片2312作为一个整体的中心与两个第四谐振片2322作为一个整体的中心重合。本实施方式中的谐振结构230可进一步提升第二预设频段的第二射频信号的增益。需要说明的是，两个第二谐振片2312作为一个整体的中心，并非两个第二谐振片2312各自的中心，而是指以两个第二谐振片2312为整体，这个整体的中心，为了方便描述，这个整体的中心记为第三中心。两个第四谐振片2322作为一个整体的中心，并非两个第四谐振片2322各自的中心，而是指以两个第四谐振片2322作为一个整体，这个整体的中心，为了方便描述，这个整体的中心记为第四中心，所述第四中心与所述第三中心重合。
请一并参阅图16、图17及图18，图16为本申请第七实施方式提供的谐振结构的俯视图；图17为本申请第七实施方式提供的谐振结构的透视图；图18为图16中沿III-III线的剖视图。在本实施方式中，所述谐振结构230包括层叠设置的第一谐振层235及第二谐振层236。需要说明的是，为了方便体现图16中的第一谐振层235和图17中的第二谐振层236之间的对应关系，图17中所示的第二谐振层236也是从与图16相同的俯视角度下透视得到的，且在图17中仅仅示意出了第二谐振层236及所述基板210，而未示意出第一谐振层235。所述第一谐振层235相较于所述第二谐振层236背离所述天线模组100，所述第一谐振层235包括周期性排布的第一谐振单元2351，所述第一谐振单元2351包括第一谐振片2311。所述第二谐振层236包括周期性排布的第二谐振单元2356，所述第二谐振单元2356包括第二谐振片2312。所述第一谐振片2311及所述第二谐振片2312相对设置，且所述第二谐振片2312在所述第一谐振片2311所在平面的正投影与所述第一谐振片2311所在的区域至少部分重合，所述第一谐振片2311及所述第二谐振片2312均为导电贴片，且满足：
L low_f≤W low_f
其中，W low_f为第一谐振片2311的边长，L low_f为第二谐振片2312的边长，所述第一谐振子结构231至少包括所述第一谐振片2311及所述第二谐振片2312。
在本实施方式中，所述第一谐振片2311及所述第二谐振片2312均为导电贴片且不包括镂空结构。所述第一谐振片2311与所述第二谐振片2312的形状可以为正方形，多边形等。在本实施方式的示意图中，以所述第一谐振片2311及所述第二谐振片2312为正方形为例进行示意。本实施方式中的第一谐振子结构231的结构形式可提升所述第一预设频段的第一射频信号的增益。
可选地，所述第一谐振单元2351包括第三谐振片2321，所述第三谐振片2321与所述第一谐振片2311间隔设置，所述第三谐振片2321的边长小于所述第一谐振片2311的边长，所述第二谐振单元2356包括第四谐振片2322，所述第四谐振片2322与所述第二谐振片2312间隔设置，所述第四谐振片2322的边长小于所述第二谐振片2312的边长，且所述第四谐振片2322与所述第三谐振片2321相对设置，所述第四谐振片2322在所述第三谐振片2321所在平面上的正投影与所述第三谐振片所在的区域至少部分重合，所述第三谐振片2321为导电贴片，所述第四谐振片2322为导电贴片且具有贯穿所述第四谐振片2322相对的两个表面的第二镂空结构232a，满足：
L high_f≥W high_f
其中，W high_f为第三谐振片2321的边长，L high_f为第四谐振片2322的边长，L high_f与W high_f的差值随着第二镂空面积的增大而增大，所述第二谐振子谐振结构232至少包括所述第三谐振片2321及所述第四谐振片2322。
在本实施方式中，所述第三谐振片2321与所述第四谐振片2322的形状可以为正方形，多边形等。在本实施方式的示意图中，以所述第三谐振片2321及所述第四谐振片2322为正方形为例，且所述第二镂空结构232a为正方形为例进行示意。在其他实施方式中，所述第二镂空结构232a还可以为圆形、椭 圆形、三角形、长方形、六边形、环形、十字形或者耶路撒冷十字形等形状。本实施方式中的第二谐振子结构232的结构形式可提升所述第二预设频段的第二射频信号的增益。进一步地，在所述第四谐振片2322上开设贯穿所述第四谐振片2322相对的两个表面上的第二镂空结构232a可改变所述第四谐振片2322上的表面电流分布，进而增加所述第四谐振片2322的电长度，即，对于第二预设频段的第二射频信号而言，开设第二镂空结构232a的第四谐振片2322的尺寸比未开设第二镂空结构232a的第四谐振片2322的边长小，且对于第二预设频段的第二射频信号而言，所述第二镂空结构232a的镂空面积越大，所述第四谐振片2322的边长越小，从而有利于提升所述天线罩200的集成度。
可选地，所述第一谐振单元2351还包括另外一个第一谐振片2311、及另外一个第三谐振片2321。两个第一谐振片2311对角且间隔设置，所述第三谐振片2321的边长小于所述第一谐振片2311的边长，两个第三谐振片2321对角且间隔设置。本实施方式中的谐振结构230可进一步提升第一预设频段的第一射频信号的增益。
可选地，两个第一谐振片2311作为一个整体的中心与两个第三谐振片2321作为一个整体的中心重合。本实施方式中的谐振结构230可进一步提升第一预设频段的第一射频信号的增益。两个第一谐振片2311作为一个整体的中心与两个第三谐振片2321作为一个整体的中心重合的具体解释请参阅前面的相关描述，在此不再赘述。
可选地，所述第二谐振单元2356还包括另外一个第二谐振片2312、及另外一个第四谐振片2322。两个第二谐振片2312对角且间隔设置，两个第二谐振片2312对角且间隔设置，两个第四谐振片2322对角且间隔设置。本实施方式中的谐振结构230可进一步提升第二预设频段的第二射频信号的增益。
可选地，两个第二谐振片2312作为一个整体的中心与两个第四谐振片2322作为一个整体的中心重合。本实施方式中的谐振结构230可进一步提升第二预设频段的第二射频信号的增益。两个第二谐振片2312作为一个整体的中心与两个第四谐振片2322作为一个整体的中心重合的具体解释清参阅前面的相关描述，在此不再赘述。
请一并参阅图19、图20及图21，图19为本申请第八实施方式提供的谐振结构的俯视图；图20为本申请第八实施方式提供的谐振结构的透视图；图21为图19中沿IV-IV线的剖视图。在本实施方式中，所述谐振结构230包括层叠设置的第一谐振层235及第二谐振层236。需要说明的是，为了方便体现图19中的第一谐振层235和图20中的第二谐振层之间的对应关系，图20中所示的第二谐振层236也是从与图19相同的俯视角度下透视得到的，且在图20中仅仅示意出了第二谐振层236及所述基板210，而未示意出第一谐振层235。所述第一谐振层235相较于所述第二谐振层236背离所述天线模组100，所述第一谐振层235包括周期性排布的第一谐振单元2351，所述第一谐振单元2351包括第一谐振片2311。所述第二谐振层236包括周期性排布的第二谐振单元2356，所述第二谐振单元2356包括第二谐振片2312。所述第一谐振片2311与所述第二谐振片2312相对设置，且所述第二谐振片2312在所述第一谐振片2311所在平面的正投影与所述第一谐振片2311所在的区域至少部分重合，所述第一谐振片2311为导电贴片，所述第二谐振片2312为导电贴片且具有贯穿所述第二谐振片2312相对的两个表面的第一镂空结构231a，满足：
L low_f≥W low_f
其中，W low_f为第一谐振片2311的边长，L low_f为第二谐振片2312的边长，L low_f与W low_f的差值随着所述第一镂空结构231a的面积的增大而增大，所述第一谐振子结构231至少包括所述第一谐振片2311及所述第二谐振片2312。
在本实施方式中，所述第一谐振片2311与所述第二谐振片2312的形状可以为正方形，多边形等。在本实施方式的示意图中，以所述第一谐振片2311及所述第二谐振片2312为正方形为例，且所述第一镂空结构231a为正方形为例进行示意。所述第一镂空结构231a请参阅前面实施方式的描述，在此不再赘述。本实施方式中的第一谐振子结构231的结构形式可提升所述第一预设频段的第一射频信号的增益。进一步地，相较于未开设第一镂空结构231a的第二谐振片2312而言，在所述第二谐振片2312上开设贯穿所述第二谐振片2312相对的两个表面的第一镂空结构231a可改变所述第二谐振片2312上的表面 电流分布，进而增加所述第二谐振片2312的电长度，即，对于第一预设频段的第一射频信号，开设第一镂空结构231a的第二谐振片2312的尺寸比未开设第一镂空结构231a的第二谐振片2312的边长小，且对于第一预设频段的第一射频信号而言，所述第一镂空结构231a的镂空面积越大，则所述第二谐振片2312的边长越小，从而有利于提升所述天线罩200的集成度。
可选地，所述第一谐振单元2351包括第三谐振片2321，所述第三谐振片2321与所述第一谐振片2311间隔设置，所述第三谐振片2321的边长小于所述第一谐振片2311的边长，所述第二谐振单元2356包括第四谐振片2322，所述第四谐振片2322与所述第二谐振片2312间隔设置，所述第四谐振片2322的边长小于所述第二谐振片2312的边长，且所述第四谐振片2322与所述第三谐振片2321相对设置，且所述第四谐振片2322在所述第三谐振片2321所在的平面的正投影与所述第三谐振片2321所在的区域至少部分重合，所述第三谐振片2321为导电贴片，所述第四谐振片2322为导电贴片且具有贯穿所述第四谐振片2322相对的两个表面的第二镂空结构232a，满足：
L high_f≥W high_f
其中，W high_f为第三谐振片2321的边长，L high_f为第四谐振片2322的边长，L high_f与W high_f的差值随着第二镂空面积的增大而增大，所述第二谐振子谐振结构232至少包括所述第三谐振片2321及所述第四谐振片2322。所述第二镂空结构232a请参阅前面实施方式的描述，在此不再赘述。本实施方式中的第二谐振子结构232的结构形式可提升所述第二预设频段的第二射频信号的增益。进一步地，在所述第四谐振片2322上开设贯穿所述第四谐振片2322相对的两个表面上的第二镂空结构232a可改变所述第四谐振片2322上的表面电流分布，进而增加所述第四谐振片2322的电长度，即，对于第二预设频段的第二射频信号而言，开设第二镂空结构232a的第四谐振片2322的尺寸比未开设第二镂空结构232a的第四谐振片2322的边长小，且对于第二预设频段的第二射频信号而言，所述第二镂空结构232a的镂空面积越大，所述第四谐振片2322的边长越小，从而有利于提升所述天线罩200的集成度。
可选地，所述第一谐振单元2351还包括另外一个第一谐振片2311、及另外一个第三谐振片2321。两个第一谐振片2311对角且间隔设置，所述第三谐振片2321的边长小于所述第一谐振片2311的边长，两个第三谐振片2321对角且间隔设置。本实施方式中的谐振结构230可进一步提升第一预设频段的第一射频信号的增益。
可选地，两个第一谐振片2311作为一个整体的中心与两个第三谐振片2321作为一个整体的中心重合。本实施方式中的谐振结构230可进一步提升第一预设频段的第一射频信号的增益。两个第一谐振片2311作为一个整体的中心与两个第三谐振片2321作为一个整体的中心重合的详细解释清参阅前面相关描述，在此不再赘述。
可选地，所述第二谐振单元2356还包括另外一个第二谐振片2312、及另外一个第四谐振片2322。两个第二谐振片2312对角且间隔设置，两个第二谐振片2312对角且间隔设置，两个第四谐振片2322对角且间隔设置。本实施方式中的谐振结构230可进一步提升第二预设频段的第二射频信号的增益。
可选地，两个第二谐振片2312作为一个整体的中心与两个第四谐振片2322作为一个整体的中心重合。本实施方式中的谐振结构230可进一步提升第二预设频段的第二射频信号的增益。两个第二谐振片2312作为一个整体的中心与两个第四谐振片2322作为一个整体的中心重合的详细解释清参阅前面相关描述，在此不再赘述。
前面介绍的第一谐振片2311及第二谐振片2312未通过连接件电连接，请参阅图22，图22为本申请第九实施方式中提供的谐振结构的剖视图。本实施方式提供的谐振结构230与本申请第六实施方式提供的谐振结构230基本相同，不同之处在于，在本实施方式中，所述第一谐振片2311的中心与所述第二谐振片2312的中心通过导电件2313电连接。在本实施方式中，所述第一谐振片2311通过导电件2313与第二谐振片2312电连接，从而可使得所述天线罩200形成高阻抗表面，所述第一射频信号不能沿着所述天线罩200的表面传播，从而可以提高所述第一射频信号的增益、带宽、降低背瓣，进而提升所述天线装置10利用所述第一射频信号进行通信时的通信质量。进一步地，所述第一谐振片2311的中心与所述第二谐振片2312的中心电连接，可进一步提高所述第一射频信号的增益、带宽、降低背瓣，以及 进一步提升所述天线装置10利用所述第一射频信号进行通信时的通信质量。
请参阅图23，图23为本申请第十实施方式提供的谐振结构的示意图。谐振结构230包括多条间隔排布的第一导电线路151，以及多条间隔排布的第二导电线路161，所述多条第一导电线路151与所述多条第二导电线路161交叉设置，且所述多条第一导电线路151与所述多条第二导电线路161在交叉处电连接。
可以理解地，所述第一导电线路151沿第一方向间隔排布，所述第二导电线路161沿第二方向间隔排布。沿第一方向间隔排布的两个第一导电线路151与沿地第二方向间隔排布的第二导电线路161交叉形成网格结构。可以理解地，在一实施方式中，所述第一方向垂直于所述第二方向。在其他实施方式中，所述第一方向不垂直于所述第二方向。可以理解地，在所述第一方向间隔排布的多个第一导电线路151中，相邻的两个第一导电线路151之间的距离可以相同，也可以不相同。相应地，在所述第二方向间隔排布的多个第二导电线路161中，相邻的两个第二导电线路161之间的距离可以相同，也可以不相同。在本实施方式的示意图中，以所述第一方向垂直于所述第二方向，任意相邻的两个第一导电线路151之间的距离相等，且任意相邻的两个第二导电线路161之间的距离相等为例进行示意。本实施方式中的谐振结构中第一导电线路151及所述第二导电线路161之间形成网格结构，相较于导电贴片形式而不具有网格的谐振结构230而言，具有网格结构的谐振结构230上的表面电流分布与不具有网格结构的谐振结构230的表面电流分布不同，进而增加所述谐振结构的230电长度，对于预设频段的射频信号而言，具有网格结构的谐振结构230比不具有网格结构的谐振结构230的尺寸小，从而有利于提升所述天线罩200的集成度。
请参阅图24，图24为本申请第十一实施方式提供的谐振结构的示意图。所述谐振结构230包括多个阵列设置的导电网格163，每个所述导电网格163由至少一条导电线路151围成，相邻的两个所述导电网格163至少部分复用所述导电线路151。所述导电网格163的形状可以为但不仅限于为圆形、矩形、三角形、多边形、椭圆形中的任意一种，其中，当所述导电网格163的形状为多边形时，所述导电网格163的边的个数为大于3的正整数。在本实施方式的示意图中以所述导电网格163的形状为三角形为例进行示意。本实施方式中的谐振结构230包括多个导电网格163，相较于不具有导电网格163的谐振结构230而言，具有网格结构的谐振结构230上的表面电流与不具有导电网格163的谐振结构230的表面电流分布不同，进而增刊了所述谐振结构230的电长度，对于预设频段的射频信号而言，具有导电网格163的谐振结构230比不具有导电网格163的谐振结构230的尺寸小，从而有利于提升所述天线罩200的集成度。
请参阅图25，图25为本申请第十二实施方式提供的谐振结构的示意图。在本实施方式的示意图中以所述导电网格163的形状为正六边形为例进行示意。
请参阅图26-图33，图26-图33为谐振结构中的谐振单元的结构示意图。其中，图26示意的谐振单元为圆形贴片，图27示意的谐振单元为正六边形贴片，图28-图33示意的谐振单元230b包括镂空结构，所述谐振单元230b可以为前述的包括第一镂空结构231a的第二谐振片2312，或者包括第二镂空结构232a的第四谐振片2322。
在一种可能的实施方式中，所述谐振结构230面对所述天线模组100的辐射面与所述天线的辐射面之间的距离满足：
Figure PCTCN2020122464-appb-000015
其中，h为所述天线模组100的辐射面的中心线从所述辐射面到所述谐振结构230面对所述天线模组100的表面的线段长度，所述中心线为垂直所述天线模组100的辐射面的直线，φ R1为所述谐振结构230对所述第一射频信号的反射相位与入射相位之间的差值，λ 1为所述第一射频信号在空气中的波长，N为正整数。
当φ R1＝0时，所述谐振结构230对所述第一射频信号具有同相反射特性，那么，h的最小值为
Figure PCTCN2020122464-appb-000016
从而极大地降低了h的大小，此时，对于第一射频信号而言，所述谐振结构230到所述天线模组100的辐射面的距离最近。当所述第一射频信号为28GHz时，所述谐振结构230到所述天线模组100的距离为5.35mm左右。
进一步地，所述天线模组100的方向性系数的最大值D max满足
Figure PCTCN2020122464-appb-000017
其中，
Figure PCTCN2020122464-appb-000018
其中，S 11表征所述天线罩200对所述第一射频信号的反射系数幅值。所述天线模组100在方向性系数的最大值时，所述第一射频信号的方向性最好。
进一步地，所述预设频段至少包括3GPP毫米波全频段。
请参阅图34，图34为不同介电常数的基板对应的反射系数S11曲线。在本实施方式中，以所述基板210的厚度为0.55mm为例进行仿真。在本示意图中，横轴表征频率，单位为GHz，纵轴表征反射系数，单位为dB。在本示意图中，曲线①为基板210的介电常数为3.5时反射系数S11随着频率的变化曲线，曲线②为基板210的介电常数为6.8时反射系数S11随着频率的变化曲线，曲线③为基板210的介电常数为10.9时反射系数S11随着频率的变化曲线，曲线④为基板210的介电常数为25时反射系数S11随着频率的变化曲线，曲线⑤为基板210的介电常数为36时反射系数S11随着频率的变化曲线。由本示意图可见，不同介电常数的基板210的反射系数S11一般都较为固定。
请参阅图35，图35为不同介电常数的基板对应的反射相位的曲线中28GHz的射频信号对应的反射相位。在本实施方式中，以所述基板210的厚度为0.55mm为例进行仿真。在本示意图中，横轴表征频率，单位为GHz，纵轴表征相位，单位为deg。在本示意图中，曲线①为基板210的介电常数为3.5时反射相位随着频率的变化曲线，曲线②为基板210的介电常数为6.8时反射相位随着频率的变化曲线，曲线③为基板210的介电常数为10.9时反射相位随着频率的变化曲线，曲线④为基板210的介电常数为25时反射相位随着频率的变化曲线，曲线⑤为基板210的介电常数为36时反射相位随着频率的变化曲线。在本示意图中，当频率为28GHz时，各个曲线对应的反射相位均落在(-90°～-180°)或者(90°～180°)的范围内，即，不同介电常数的介质基板210对28GHz的射频信号均不满足同相反射特性。
请参阅图36，图36为不同介电常数的基板对应的反射相位的曲线中39GHz的射频信号对应的反射相位。在本实施方式中，以所述基板210的厚度为0.55mm为例进行仿真。在本示意图中，横轴表征频率，单位为GHz，纵轴表征相位，单位为deg。在本示意图中，曲线①为基板210的介电常数为3.5时反射相位随着频率的变化曲线，曲线②为基板210的介电常数为6.8时反射相位随着频率的变化曲线，曲线③为基板210的介电常数为10.9时反射相位随着频率的变化曲线，曲线④为基板210的介电常数为25时反射相位随着频率的变化曲线，曲线⑤为基板210的介电常数为36时反射相位随着频率的变化曲线。在本示意图中，当频率为39GHz时，各个曲线对应的反射相位均落在(-90°～-180°)或者(90°～180°)的范围内，即，不同介电常数的介质基板210对39GHz的射频信号均不满足同相反射特性。
请参阅图37，图37为本申请提供的天线罩的反射系数S11及透射系数S12的曲线示意图。在本示意图中，横轴表征频率，单位为GHz，纵轴表征系数，单位为dB。在本示意图中，曲线①表示反射系数随着频率的变化曲线，曲线②表示透射系数随着频率的变化曲线。在本示意图中，对于28GHz及39GHz的射频信号而言，透射系数较大，反射系数较小。即，对于28GHz及39GHz的射频信号而言可较好地透过本申请提供的天线罩200，即，具有较高的透过率。
请参阅图38，图38为本申请提供的天线罩的反射相位曲线示意图。在本示意图中，横轴表征频率，单位为GHz，纵轴表征反射相位与入射相位的差值，单位为deg。由本图中可见，在28GHz时，所述反射相位与入射相位的差值大致为0，满足同相反射特性。对于n261(27.5～28.35GHz)频段中的各个频点，反射相位与入射相位的差值位于-90°～+90°范围内，即，所述天线罩200于n261频段具有同相反射特性；对于n260(37～40GHz)频段中的各个频点，反射相位与入射相位的差值位于-90°～+90°范围内，即，所述天线罩200对n260频段具有同相反射特性。
请参阅图39，图39为本申请提供的天线罩在28GHz及39GHz的方向性方向图。以所述天线模组100的辐射面的中心线从到所述辐射面到所述谐振结构230面对所述天线模组100的表面的线段的长度为2.62mm(即，相当于28GHz的射频信号在空气中传播时的波长的四分之一)为例进行仿真。由天线罩200在28GHz的方向图可见，所述方向图中的最大值为11.7dBi，即，天线模组100在28GHz的增益为11.7，所述天线模组100在28GHz时具有较大的增益；由所述天线罩200在39GHz的方向图可见，方向图中的最大值为12.2dBi，即，天线模组100在28GHz的增益为11.7，所述天线模组100在39GHz时具有较大的增益。
本申请还提供一种电子设备1，请参阅图40，图40为本申请一实施方式提供的电子设备电路框图。所述电子设备1包括控制器30和天线装置10。所述天线装置10请参阅前面描述，在此不再赘述。所述天线装置10与所述控制器30电连接，所述天线装置10中的天线模组100用于在所述控制器30的控制下发出第一射频信号及第二射频信号。
请参阅图41，图41为本申请一实施方式提供的电子设备的结构示意图。所述电子设备1包括电池盖50。所述基板210至少包括所述电池盖50。所述谐振结构230与所述电池盖50的关系可参照所述谐振结构230同前面介绍的基板210的位置关系，只要把前面描述的基板210替换层电池盖50即可。举例而言，所述谐振结构230可直接设置在所述电池盖50的内表面；或者，所述谐振结构230通过承载膜220贴附于所述电池盖50的内表面；或者，所述谐振结构230直接设置于所述电池盖50的外表面；或者，所述谐振结构230通过承载膜220贴附于所述电池盖50的外表面；或者，所述谐振结构230的部分设置于所述电池盖50的内表面，且所述谐振结构230的部分设置于所述电池盖50的外表面；或者，所述谐振结构230部分内嵌于所述电池盖50。所述谐振结构230的部分设置于所述电池盖50的内表面包括：所述部分直接设置于所述内表面，或者所述部分通过承载膜220设置于所述内表面。所述谐振结构230的部分设置于所述电池盖50的外表面包括：所述谐振结构230的所述部分直接设置于所述电池盖50的外表面，或者，所述谐振结构230的所述部分通过承载膜220设置于所述电池盖50的外表面。
所述电池盖50通常包括背板510及与所述背板510周缘弯折相连的边框520。所述谐振结构230可对应所述背板510设置，也可对应所述边框520设置，在本实施方式中，以所述谐振结构230对应所述背板510设置为例进行示意。
进一步地，本实施方式中的电子设备1还包括屏幕70，所述屏幕70设置于所述电池盖50的开口处。所述屏幕70用于显示文字、图像、视频等。
请参阅图42，图42为本申请一实施方式提供的电子设备的结构示意图。所述电子设备1还包括屏幕70，所述基板210至少包括所述屏幕70，所述屏幕70包括盖板710及与所述盖板710层叠设置的显示模组730，所述谐振结构230位于所述盖板710与所述显示模组730之间。所述显示模组730可以为但不仅限于为液晶显示模组，或者是有机发光二极管显示模组，相应地，所述屏幕70可以为但不仅限于为液晶显示屏或有机发光二极管显示屏。在屏幕70中，所述显示模组730及所述盖板710通常为单独的模组，将所述谐振结构230设置于所述盖板710与所述显示模组730之间，可减小所述谐振结构230集成于所述屏幕70的集成难度。
进一步地，所述电子设备1还包括电池盖50，所述屏幕70设置于所述电池盖50的开口处。所述电池盖50通常包括背板510及与所述背板510周缘弯折相连的边框520。
在一实施方式中，所述谐振结构230位于所述盖板710面对所述显示模组730的表面。所述谐振结构230位于所述盖板710面对所述显示模组730的表面相较于所述谐振结构230设置于所述显示模组730之中而言，可降低所述谐振结构230形成于所述盖板710的难度。
尽管上面已经示出和描述了本申请的实施例，可以理解的是，上述实施例是示例性的，不能理解为对本申请的限制，本领域的普通技术人员在本申请的范围内可以对上述实施例进行变化、修改、替换和变型，这些改进和润饰也视为本申请的保护范围。

Claims (21)

  1. 一种天线装置，其特征在于，所述天线装置包括：
    天线模组，所述天线模组用于朝第一预设方向范围收发第一预设频段的第一射频信号，还用于朝第二预设方向范围收发第二预设频段的第二射频信号，所述第一预设频段小于所述第二预设频段，且所述第一预设方向范围与所述第二预设方向范围存在交叠区域；
    天线罩，所述天线罩与所述天线模组间隔设置，所述天线罩包括基板和承载于所述基板的谐振结构，所述谐振结构至少部分位于所述交叠区域内；
    所述谐振结构至少对第一射频信号具有同相反射特性且对所述第二射频信号具有同相反射特性。
  2. 如权利要求1所述的天线装置，其特征在于，所述谐振结构至少满足：
    Figure PCTCN2020122464-appb-100001
    其中，φ R1为所述谐振结构对所述第一射频信号的反射相位与入射相位之间的差值，λ 1为所述第一射频信号在空气中的波长；φ R2为所述谐振结构对所述第二射频信号的反射相位与入射相位之间的差值，λ 2为所述第二射频信号在空气中的波长，N为正整数。
  3. 如权利要求2所述的天线装置，其特征在于，所述谐振结构包括间隔设置的第一谐振子结构及第二谐振子结构，所述第一谐振子结构对所述第一射频信号具有同相反射特性，所述第二谐振结构对所述第二射频信号具有同相反射特性。
  4. 如权利要求3所述的天线装置，其特征在于，所述谐振结构包括层叠设置的第一谐振层及第二谐振层，所述第一谐振层相较于所述第二谐振层背离所述天线模组，所述第一谐振层包括周期性排布的第一谐振单元，所述第一谐振单元包括第一谐振片，所述第二谐振层包括周期性排布的第二谐振单元，所述第二谐振单元包括第二谐振片，所述第一谐振片及所述第二谐振片相对设置，且所述第二谐振片在所述第一谐振片所在平面的正投影与所述第一谐振片所在的区域至少部分重合，所述第一谐振片及所述第二谐振片均为导电贴片，且满足：
    L low_f≤W low_f
    其中，W low_f为第一谐振片的边长，L low_f为第二谐振片的边长，所述第一谐振子结构至少包括所述第一谐振片及所述第二谐振片。
  5. 如权利要求3所述的天线装置，其特征在于，所述谐振结构包括层叠设置的第一谐振层及第二谐振层，所述第一谐振层相较于所述第二谐振层背离所述天线模组，所述第一谐振层包括周期性排布的第一谐振单元，所述第一谐振单元包括第一谐振片，所述第二谐振层包括周期性排布的第二谐振单元，所述第二谐振单元包括第二谐振片，所述第一谐振片与所述第二谐振片相对设置，且所述第二谐振片在所述第一谐振片所在平面的正投影与所述第一谐振片所在的区域至少部分重合，所述第一谐振片为导电贴片，所述第二谐振片为导电贴片且具有贯穿所述第二谐振片相对的两个表面的第一镂空结构，满足：
    L low_f≥W low_f
    其中，W low_f为第一谐振片的边长，L low_f为第二谐振片的边长，L low_f与W low_f的差值随着所述第一镂空结构的面积的增大而增大，所述第一谐振子结构至少包括所述第一谐振片及所述第二谐振片。
  6. 如权利要求4或5所述的天线装置，其特征在于，所述第一谐振单元包括第三谐振片，所述第三谐振片与所述第一谐振片间隔设置，所述第三谐振片的边长小于所述第一谐振片的边长，所述第二谐振单元包括第四谐振片，所述第四谐振片与所述第二谐振片间隔设置，所述第四谐振片的边长小于所述第二谐振片的边长，且所述第四谐振片与所述第三谐振片相对设置，且所述第四谐振片在所述第三谐振片 所在平面的正投影与所述第三谐振片所在的区域至少部分重合，所述第三谐振片及所述第四谐振片均为导电贴片，且满足：
    L high_f≤W high_f
    其中，W high_f为第三谐振片的边长，L high_f为第四谐振片的边长，所述第二谐振子谐振结构至少包括所述第三谐振片及所述第四谐振片。
  7. 如权利要求4或5所述的天线装置，其特征在于，所述第一谐振单元包括第三谐振片，所述第三谐振片与所述第一谐振片间隔设置，所述第三谐振片的边长小于所述第一谐振片的边长，所述第二谐振单元包括第四谐振片，所述第四谐振片与所述第二谐振片间隔设置，所述第四谐振片的边长小于所述第二谐振片的边长，且所述第四谐振片与所述第三谐振片相对设置，且所述第四谐振片在所述第三谐振片所在平面的正投影与所述第三谐振片所在的区域至少部分重合，所述第三谐振片为导电贴片，所述第四谐振片为导电贴片且具有贯穿所述第四谐振片相对的两个表面的第二镂空结构，满足：
    L high_f≥W high_f
    其中，W high_f为第三谐振片的边长，L high_f为第四谐振片的边长，L high_f与W high_f的差值随着第二镂空面积的增大而增大，所述第二谐振子谐振结构至少包括所述第三谐振片及所述第四谐振片。
  8. 如权利要求6或7所述的天线装置，其特征在于，所述第一谐振单元还包括另外一个第一谐振片、及另外一个第三谐振片，两个第一谐振片对角且间隔设置，所述第三谐振片的边长小于所述第一谐振片的边长，两个第三谐振片对角且间隔设置。
  9. 如权利要求8所述的天线装置，其特征在于，两个第一谐振片作为一个整体的中心与两个第三谐振片作为一个整体的中心重合。
  10. 如权利要求6或7所述的天线装置，其特征在于，所述第二谐振单元还包括另外一个第二谐振片、及另外一个第四谐振片，两个第二谐振片对角且间隔设置，两个第二谐振片对角且间隔设置，两个第四谐振片对角且间隔设置。
  11. 如权利要求10所述的天线装置，其特征在于，两个第二谐振片作为一个整体的中心与两个第四谐振片作为一个整体的中心重合。
  12. 如权利要求4所述的天线装置，其特征在于，所述第一谐振片的中心与所述第二谐振片的中心通过导电件电连接。
  13. 如权利要求1所述的天线装置，其特征在于，谐振结构包括多条间隔排布的第一导电线路，以及多条间隔排布的第二导电线路，所述多条第一导电线路与所述多条第二导电线路交叉设置，且所述多条第一导电线路与所述多条第二导电线路在交叉处电连接。
  14. 如权利要求1所述的天线装置，其特征在于，所述谐振结构包括多个阵列设置的导电网格，每个所述导电网格由至少一条导电线路围成，相邻的两个所述导电网格至少部分复用所述导电线路。
  15. 如权利要求1所述的天线装置，其特征在于，所述谐振结构面对所述天线模组的辐射面与所述天线的辐射面之间的距离满足：
    Figure PCTCN2020122464-appb-100002
    其中，h为所述天线模组的辐射面的中心线从所述辐射面到所述谐振结构面对所述天线模组的表面的线段长度，所述中心线为垂直所述天线模组的辐射面的直线，φ R1为所述谐振结构对所述第一射频信号的反射相位与入射相位之间的差值，λ 1为所述第一射频信号在空气中的波长，N为正整数。
  16. 如权利要求15所述的天线装置，其特征在于，当φ R1＝0时，所述谐振结构面对所述天线模组的辐射面与所述天线的辐射面之间的最小距离h＝λ 1/4。
  17. 如权利要求1所述的天线装置，其特征在于，所述天线模组的方向性系数的最大值D max满足
    Figure PCTCN2020122464-appb-100003
    其中，
    Figure PCTCN2020122464-appb-100004
    其中，S 11表征所述天线罩对所述第一射频信号的反射系数幅值。
  18. 如权利要求1所述的天线装置，其特征在于，所述预设频段至少包括3GPP毫米波全频段。
  19. 一种电子设备，其特征在于，所述电子设备包括控制器和如权利要求1-18任意一项所述的天线装置，所述天线装置与所述控制器电连接，所述天线装置中的天线模组用于在所述控制器的控制下发出第一射频信号及第二射频信号。
  20. 如权利要求19所述的电子设备，其特征在于，所述电子设备包括电池盖，所述基板至少包括所述电池盖，所述谐振结构直接设置在所述电池盖的内表面；或者，所述谐振结构通过承载膜贴附于所述电池盖的内表面；或者，所述谐振结构直接设置于所述电池盖的外表面；或者，所述谐振结构通过承载膜贴附于所述电池盖的外表面；或者，所述谐振结构的部分设置于所述电池盖的内表面，且所述谐振结构的部分设置于所述电池盖的外表面；或者，所述谐振结构部分内嵌于所述电池盖。
  21. 如权利要求18所述的电子设备，其特征在于，所述电子设备还包括屏幕，所述基板至少包括所述屏幕，所述屏幕包括盖板及与所述盖板层叠设置的显示模组，所述谐振结构位于所述盖板与所述显示模组之间。
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