WO2021068328A1 - Spliced exposure system and spliced exposure method using same - Google Patents

Spliced exposure system and spliced exposure method using same Download PDF

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Publication number
WO2021068328A1
WO2021068328A1 PCT/CN2019/117324 CN2019117324W WO2021068328A1 WO 2021068328 A1 WO2021068328 A1 WO 2021068328A1 CN 2019117324 W CN2019117324 W CN 2019117324W WO 2021068328 A1 WO2021068328 A1 WO 2021068328A1
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WO
WIPO (PCT)
Prior art keywords
light
baffle
exposure
transmitting area
area
Prior art date
Application number
PCT/CN2019/117324
Other languages
French (fr)
Chinese (zh)
Inventor
杜鹏
Original Assignee
Tcl华星光电技术有限公司
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Publication of WO2021068328A1 publication Critical patent/WO2021068328A1/en

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/22Exposing sequentially with the same light pattern different positions of the same surface
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display

Definitions

  • the present disclosure relates to the field of semiconductor technology, in particular to a splicing exposure system and a splicing exposure method using the system.
  • each photomask 120 has a fixed effective exposure area, as shown in FIG. 1.
  • the size of the produced panel 110 is relatively small, the panel will be completely located within the effective exposure area of the mask 120 (Mask, or mask). At this time, splicing is not required. Every exposure in the exposure process can be produced.
  • One or several complete panels 110 When the size of the panel 110 is further increased, it may exceed the effective exposure area of the photomask. It is often encountered that the size of the panel in one direction exceeds the effective exposure range of the photomask.
  • the display panel 110 when the display panel 110 exceeds the effective exposure range of the photomask 120 in one direction, the display panel needs to be divided during design, and then spliced exposure is performed.
  • the position of each exposure edge is the splicing area.
  • the main problem in the stitching exposure process comes from the stitching area. Due to the light intensity between different exposure shots, the limitation of machine movement accuracy, the stacking error of source and drain gates, etc., the parasitic capacitance of the thin film transistor of the pixel in the splicing area is often different, and different coupling effects are generated.
  • the brightness display is not uniform (ie Mura). Therefore, some special design methods need to be adopted in these splicing areas.
  • Different exposure machines have different splicing methods, such as VFS for Nikon machines, SMB for Canon machines and other splicing methods.
  • VFS for Nikon machines
  • SMB for Canon machines
  • other splicing methods For the CF (color film substrate) process, a progressive exposure machine is often used, but the exposure machine does not have functions such as VFS or SMB, so special techniques are required to avoid uneven brightness display in the splicing area when designing the mask.
  • Figure 3A and Figure 3B are the two most commonly used design methods to avoid splicing Mura.
  • the first is the subtractive pattern (ie Hyper Shot), its principle is to form a gradual transmittance area at each exposure edge of the mask, the transmittance near the middle of the exposure is the highest, and the transmittance far away from the middle of the exposure is the lowest (here is Take the negative photoresist of the CF process as an example), as shown by the arrow in Figure 3A.
  • the second method is a mosaic pattern, which also forms a pattern density gradient area at the edge position of each exposure, and the density of the mosaic pattern is shown in Figure 3B.
  • Fig. 4 is a complete large-size panel made by using the mask in Fig. 2.
  • the left side (that is, the area where the mark 101 is located) and the right side (that is, the area where the mark 103 is located) of the display panel in FIG. 4 are made through the mask shown in FIG. 2, and the middle part B of the display panel (where the mark 102 is located) Area) is repeated twice exposure.
  • the purpose of the present disclosure is to provide a splicing exposure system and a splicing exposure method using the system.
  • the present disclosure provides a splicing exposure system applied to a display panel, the display panel is divided into a plurality of exposure areas, wherein the splicing exposure system includes: a mask, the mask The plate covers one of the multiple exposure areas, the mask plate is used to expose the exposure area; a pair of baffles, the pair of baffles are both set on the mask plate Above, the pair of baffles includes a first baffle and a second baffle, the first baffle and the second baffle are arranged oppositely, and one side of the first baffle has a first transparent Light area, the side of the second baffle close to the first light transmission area has a second light transmission area, the center line of the first light transmission area and the center line of the second light transmission area are One of them coincides with the splicing lines of two adjacent exposure areas; the first light-transmitting area and the second light-transmitting area have complementary gradient patterns; the first light-transmitting area and the second light-transmitting area The width is
  • the present disclosure provides a splicing exposure system applied to a display panel, the display panel is divided into a plurality of exposure areas, the splicing exposure system includes: a mask, the mask The plate covers one of the multiple exposure areas, the mask plate is used to expose the exposure area; a pair of baffles, the pair of baffles are both set on the mask plate Above, the pair of baffles includes a first baffle and a second baffle, the first baffle and the second baffle are arranged oppositely, and one side of the first baffle has a first transparent Light area, the side of the second baffle close to the first light transmission area has a second light transmission area, the center line of the first light transmission area and the center line of the second light transmission area are One of them coincides with the splicing lines of two adjacent exposure areas.
  • the first light-transmitting area and the second light-transmitting area have complementary gradient patterns.
  • the first light-transmitting area and the second light-transmitting area have complementary mosaic patterns.
  • the light transmittance of the first light-transmitting area along a predetermined direction continuously changes from 0 to 100%; the light transmittance of the second light-transmitting area along the predetermined direction Continuously change from 100% to 0.
  • the light transmittance of the first light-transmitting area along a predetermined direction corresponds to a plurality of light transmittances from 0 to 100%; the second light-transmitting area is along the predetermined direction. Let the light transmittance in the direction correspond to multiple light transmittances from 100% to 0, respectively.
  • the widths of the first light-transmitting area and the second light-transmitting area are greater than or equal to 10 mm.
  • a splicing exposure method using the splicing exposure system described above includes the following steps: providing a display panel; dividing the display panel into a plurality of exposure areas; A mask plate is arranged above one of the exposure areas in the area; a pair of baffles are arranged above the mask plate, wherein the pair of baffles includes a first baffle and a second baffle, the first baffle A baffle is arranged opposite to the second baffle, one side of the first baffle has a first light-transmitting area, and a side of the second baffle close to the first light-transmitting area has a first light-transmitting area.
  • Two light transmission areas one of the center line of the first light transmission area and the center line of the second light transmission area coincides with the splicing line of two adjacent exposure areas; through a pair of baffles and masks After the exposure is completed, the pair of baffles and mask plates are translated to the adjacent exposure area of the exposure area to be exposed for exposure until the exposure area to be exposed is exposed. All exposure areas have completed the exposure operation.
  • the first light-transmitting area and the second light-transmitting area have complementary gradient patterns.
  • the first light-transmitting area and the second light-transmitting area have complementary mosaic patterns.
  • the advantage of the present disclosure is that the present disclosure redesigns the splicing exposure system suitable for the super-large-size display panel to realize the efficient production of the large-size or curved display panel and reduce the impact on cost and productivity.
  • Fig. 1 is a schematic diagram of a use state of a mask in the prior art.
  • FIG. 2 is a schematic diagram of the relationship between the mask plate and the display panel in the prior art.
  • 3A and 3B are respectively schematic diagrams of two design methods commonly used in the prior art to avoid splicing Mura (uneven display brightness).
  • FIG. 4 is a schematic diagram of the display panel in the prior art after four exposures.
  • FIG. 5 is a schematic diagram of the design of the mask in an embodiment of the present disclosure.
  • FIG. 6 is a schematic diagram of completing the manufacturing of the display panel using two exposures in an embodiment of the present disclosure.
  • FIG. 7 is a schematic diagram of manufacturing the left half of the display panel shown in FIG. 6.
  • FIG. 8 is a schematic diagram of manufacturing the right half of the display panel shown in FIG. 6.
  • FIG. 9 is a schematic diagram of an exposure process performed by a first baffle, a second baffle and a mask in an embodiment of the present disclosure.
  • FIG. 10 is a schematic diagram of the corresponding relationship between the first baffle and the second baffle shown in FIG. 9 and the light transmittance.
  • FIG. 11 is a schematic diagram of the exposure process performed by the first baffle, the second baffle and the mask in another embodiment of the present disclosure.
  • FIG. 12 is a schematic diagram of the corresponding relationship between the first baffle and the second baffle shown in FIG. 11 and the light transmittance.
  • FIG. 13 is a flowchart of the steps of the splicing exposure method of the splicing exposure system in an embodiment of the present disclosure.
  • the embodiments of the present disclosure provide a splicing exposure system and a splicing exposure method using the system. The detailed description will be given below.
  • FIG. 5 is a schematic diagram of the design of the mask in an embodiment of the present disclosure.
  • FIG. 6 is a schematic diagram of completing the manufacturing of the display panel using two exposures in an embodiment of the present disclosure.
  • FIG. 7 is a schematic diagram of manufacturing the left half of the display panel shown in FIG. 6.
  • FIG. 8 is a schematic diagram of manufacturing the right half of the display panel shown in FIG. 6.
  • the display panel shown in FIG. 4 needs to be exposed for 4 times in total, this also adopts hyper shot exposure and mosaic pattern exposure. pattern) The minimum number of exposures to expose the design plan.
  • the above-mentioned production method will increase the number of exposures, and the production cycle time and productivity will also be greatly affected. Therefore, the present disclosure reduces the number of exposures by redesigning the splicing exposure system suitable for super-large display panels.
  • mark A indicates the exposure range of the first exposure.
  • Mark B indicates the second exposure range.
  • the mask 120 described in the present disclosure and the baffle described below are used, only two exposures are required.
  • the production of the display panel 110 is completed.
  • the first exposure completes the left half 101 of the display panel 110, and the second exposure completes the right half 102 of the display panel 110.
  • the pattern at the middle position of the mask 120 will be used in both exposures.
  • the present disclosure realizes the reduction of the exposure boundary line (ie the splicing line 104 of the splicing area), thereby reducing the probability of splicing Mura and reducing the difficulty of the manufacturing process.
  • the production of the left half 101 of the display panel 110 shown in FIG. 6 is taken as an example.
  • the second baffle 130 covers the right part of the mask 120 Blocked, the left half of the mask 120 is illuminated (for example, ultraviolet light). Therefore, the corresponding patterns on the mask 120 are transferred to the substrate of the display panel 110 at the same time.
  • the left edge of the second baffle 130 located on the right part of the mask 120 has a light transmittance gradient area (that is, the second light transmittance area 131 described below), and the center line of the light transmittance gradient area Corresponding to the center line of the splicing area (ie splicing line m) formed by two adjacent exposure areas of the display panel 110, the right part of the second baffle 130 is opaque, and its light transmittance is zero.
  • the splicing exposure method of the present disclosure is used, the exposure area of each exposure is larger than the exposure area shown in FIG. 4, and therefore, the number of exposures in the exposure process can be reduced.
  • the second exposure is also performed in a similar manner, taking the production of the right half 102 of the display panel 110 shown in FIG. 6 as an example.
  • the first baffle 140 blocks the left part of the mask 120, and the right half of the mask 120 illuminates light (for example, ultraviolet light). Therefore, the corresponding patterns on the mask 120 are transferred to the substrate of the display panel 110 at the same time.
  • the left part of the first baffle 140 is opaque, and its light transmittance is zero.
  • the light transmittance gradient area of the first baffle 140 in the second exposure and the light transmittance gradient area of the second baffle 130 in the first exposure are overlapped, and this area is a splicing area formed by two adjacent exposure areas of the display panel 110.
  • the splicing exposure system is applied to a display panel 110, wherein the display panel 110 is divided into a plurality of exposure areas (for example, the mark 101 and the mark 102 shown in FIG. 6).
  • the display panel 110 is divided into a plurality of exposure areas, and the area sizes of the exposure areas may be the same or different.
  • the splicing exposure system includes: a mask 120 and a pair of baffles 170.
  • the mask 120 covers one of the multiple exposure areas (for example, the mark 101 or the mark 102 shown in FIG. 6), and the mask 120 is used for exposing the exposure area . That is, the mask 120 is used to expose a certain exposure area in the substrate of the display panel 110.
  • the pair of baffles are both disposed above the mask plate, and the pair of baffles 170 include a first baffle 140 and a second baffle 130.
  • the first baffle 140 and the second baffle 130 are arranged opposite to each other. Wherein, the first baffle 140 and the second baffle 130 may be arranged at intervals.
  • one side of the first baffle 140 has a first light-transmitting area 141
  • a side of the second baffle 130 close to the first light-transmitting area 141 has a second light-transmitting area 131, so
  • the splicing line between one of the center line of the first light-transmitting area and the center line of the second light-transmitting area and two adjacent exposure areas (mark m in FIG. 7 or mark n in FIG. 8) coincide.
  • FIG. 9 is a schematic diagram of an exposure process in an embodiment of the present disclosure.
  • FIG. 10 is a schematic diagram of the corresponding relationship between the first baffle 140 and the second baffle 130 shown in FIG. 9 and the light transmittance.
  • the first light-transmitting area 141 and the second light-transmitting area 131 have complementary gradient patterns.
  • the first baffle 140 (the left baffle shown in FIG. 9) and the second baffle 130 (the right baffle shown in FIG. 9) are both located above the mask plate 120 .
  • the right side of the first baffle 140 has a first light-transmitting area 141
  • the left side of the second baffle 130 has a second light-transmitting area 131.
  • the first light-transmitting area 141 has a gradual pattern. Therefore, the light transmittance of the first light-transmitting area 141 has a corresponding gradation, such as increasing or decreasing, so that the ultraviolet light passing through the first light-transmitting area 141 can be transmitted. The rate can change accordingly such as increasing or decreasing.
  • the second light-transmitting area 131 also has a gradual pattern. Therefore, the light transmittance of the second light-transmitting area 131 has a corresponding gradual change, such as increasing or decreasing, so that the light passing through the second light-transmitting area 131 The transmittance of ultraviolet light can be changed accordingly, such as increasing or decreasing.
  • the first light-transmitting area 141 and the second light-transmitting area 131 have complementary gradual patterns, when the light transmittance of the first light-transmitting area 141 decreases, the light transmittance of the second light-transmitting area 131 increases. When the light transmittance of the first light-transmitting area 141 increases, the light transmittance of the second light-transmitting area 131 decreases.
  • the light transmittance of the first light transmission area 141 is continuous from 0 If it changes to 100%, the light transmittance of the second light-transmitting area 131 along the predetermined direction continuously changes from 100% to 0.
  • the light transmittance of the first light-transmitting area 141 in a predetermined direction (based on the length of the first baffle 140), for example, from right to left, can also be continuous from 100%. If it changes to 0, the light transmittance of the second light-transmitting area 131 along the predetermined direction continuously changes from 0 to 100%.
  • the center line of the area 131) coincides with the splicing line (mark m as shown in FIG. 7) of two adjacent exposure areas.
  • the first light-transmitting area 141 is located outside the left side of the exposure area, and has exceeded the exposure range and does not work.
  • the center line of the first light-transmitting area 141 and the center line of the second light-transmitting area 131 coincides with the splicing line of two adjacent exposure areas (mark n as shown in Figure 8).
  • the second light-transmitting area 131 is located outside the exposure area on the right side, and has exceeded the exposure range and does not work.
  • the light transmittance of the first light-transmitting area 141 changes linearly along the preset direction (the arrow direction as shown in FIG. 10), that is, it continuously changes from 0 to 100%, and the light transmittance of the second light-transmitting area 131 is along
  • the preset direction also changes linearly, continuously changing from 100% to 0. Therefore, when two oppositely arranged first baffle 140 and second baffle 130 are used and the mask 120 is used for splicing exposure, it can be conveniently The light intensity is controlled so that the full exposure intensity can be reached after two exposures of the first baffle 140 and the second baffle 130.
  • the sum of the light transmittance of the two is exactly equal to 100%, because the first light-transmitting area 141 and the second light-transmitting area 141
  • the light transmittance of the two light-transmitting regions 131 changes linearly, so it is beneficial to ensure a uniform transition of the splicing areas corresponding to the first light-transmitting area 141 and the second light-transmitting area 131, thereby effectively reducing the occurrence of splicing Mura.
  • the widths of the first light-transmitting area 141 and the second light-transmitting area 131 need to meet a certain size, for example, greater than or equal to 10 mm, which can ensure that the transition between two exposures is more relaxed. This reduces the risk of splicing Mura.
  • the first light-transmitting area 141 is along a predetermined direction (based on the length direction of the first baffle 140), for example, from left to right, the light transmittance thereof is intermittently changed from 0 To 100%, which respectively correspond to multiple light transmittances from 0 to 100%, such as 0, 30%, 60%, 100%, and the light transmittance of the second light-transmitting area 131 along the predetermined direction
  • the intermittent change from 100% to 0 corresponds to multiple transmittances from 100% to 0, such as 100%, 70%, 40%, and 0.
  • complementary mosaic patterns may also be formed on the first baffle 140 and the second baffle 130 , As described below.
  • FIG. 11 is a schematic diagram of an exposure process in another embodiment of the present disclosure.
  • FIG. 12 is a schematic diagram of the corresponding relationship between the first baffle and the second baffle 130 shown in FIG. 11 and the light transmittance.
  • the first light-transmitting area and the second light-transmitting area have complementary mosaic patterns.
  • the first baffle 140 (the left baffle as shown in FIG. 11) and the second baffle 130 (the right baffle as shown in FIG. 12) are both located above the mask plate 120. .
  • the right side of the first baffle 140 has a first light-transmitting area 141
  • the left side of the second baffle 130 has a second light-transmitting area 131.
  • the first light-transmitting area 141 has a certain width of the mosaic pattern area with a gradual mosaic pattern density. Therefore, the light transmittance of the first light-transmitting area has a corresponding gradation, such as increasing or decreasing, so as to pass through the first light-transmitting area.
  • the ultraviolet light transmittance of the area 141 can correspondingly change, such as increasing or decreasing.
  • the second light-transmitting area 131 also has a certain width of the mosaic pattern area with gradual density. Therefore, the light transmittance of the second light-transmitting area 131 has a corresponding gradual change, such as increasing or decreasing, so as to pass through the second light-transmitting area 131.
  • the ultraviolet light transmittance of the two light-transmitting regions 131 can correspondingly change, such as increasing or decreasing.
  • the first light transmission area 141 and the second light transmission area 131 have complementary mosaic patterns, when the light transmittance of the first light transmission area 141 decreases, the light transmittance of the second light transmission area 131 increases. When the light transmittance of the first light-transmitting area 141 increases, the light transmittance of the second light-transmitting area 131 decreases.
  • the density of the left side of the first light-transmitting region 141 is high, and the right If the side density is low, the second light-transmitting area 131 has a low density on the left side and a high density on the right side along the predetermined direction.
  • the effects of the solutions shown in FIGS. 9 and 10 can also be achieved.
  • FIG. 13 is a flow chart of the steps of the splicing exposure method of the splicing exposure system in an embodiment of the disclosure. Wherein, the splicing exposure system is the system described above, and will not be repeated here.
  • the method includes the following steps:
  • Step S110 Provide a display panel.
  • Step S120 divide the display panel into multiple exposure areas.
  • Step S130 setting a mask above one of the multiple exposure areas.
  • Step S140 Set a pair of baffles above the mask plate, wherein the pair of baffles include a first baffle and a second baffle, and the first baffle and the second baffle are opposite to each other.
  • the pair of baffles include a first baffle and a second baffle, and the first baffle and the second baffle are opposite to each other.
  • one side of the first baffle has a first light-transmitting area
  • the side of the second baffle close to the first light-transmitting area has a second light-transmitting area
  • the first light-transmitting area One of the center line of the area and the center line of the second light-transmitting area coincides with the splicing line of two adjacent exposure areas.
  • Step S150 Expose the exposed area to be exposed through a pair of baffles and masks.
  • the first baffle (the left baffle as shown in FIG. 9) and the second baffle (the right baffle as shown in FIG. 9) are both located above the mask plate.
  • the right side of the first baffle has a first light-transmitting area
  • the left side of the second baffle has a second light-transmitting area.
  • the first light-transmitting area has a gradual pattern. Therefore, the light transmittance of the first light-transmitting area has a corresponding gradation, such as increasing or decreasing, so that the transmittance of ultraviolet light passing through the first light-transmitting area can be correspondingly changed. The gradual changes such as increasing or decreasing.
  • the second light-transmitting area also has a gradual pattern. Therefore, the light transmittance of the second light-transmitting area has a corresponding gradation, such as increasing or decreasing, so that the ultraviolet light passing through the second light-transmitting area is transparent.
  • the overrate can change accordingly such as increasing or decreasing.
  • the first light transmission area and the second light transmission area have complementary gradual patterns, when the light transmittance of the first light transmission area decreases, the light transmittance of the second light transmission area increases. When the light transmittance of the first light-transmitting area increases, the light transmittance of the second light-transmitting area decreases.
  • the light transmittance of the first light transmission area continuously changes from 0 to 100%
  • the light transmittance of the second light-transmitting area along the predetermined direction continuously changes from 100% to 0.
  • the light transmittance of the first light-transmitting area in a predetermined direction (based on the length of the first baffle), for example, from right to left, can also be continuously changed from 100% to 0, the light transmittance of the second light-transmitting area along the predetermined direction continuously changes from 0 to 100%.
  • one of the center line of the first light-transmitting area and the center line of the second light-transmitting area coincides with the stitching lines of two adjacent exposure areas.
  • the first light-transmitting area is located on the outer side of the left side of the exposure area, which has exceeded the exposure range and does not work.
  • one of the center line of the first light-transmitting area and the center line of the second light-transmitting area coincides with the stitching lines of two adjacent exposure areas.
  • the second light-transmitting area is located outside the exposure area on the right side, which has exceeded the exposure range and has no effect.
  • the light transmittance of the first light-transmitting area changes linearly along the preset direction (such as the arrow direction as shown in Figure 10), that is, it continuously changes from 0 to 100%, while the light transmittance of the second light-transmitting area changes along the predetermined direction.
  • the setting direction also changes linearly, continuously changing from 100% to 0. Therefore, when two oppositely arranged first baffle and second baffle are used and the mask is used for splicing exposure, the light intensity control can be conveniently performed , So that the full exposure intensity can be reached after two exposures of the first baffle and the second baffle.
  • the sum of the light transmittance of the two is exactly equal to 100%, because the first light-transmitting area and the second light-transmitting area
  • the light transmittance of the area changes linearly, so it is beneficial to ensure a uniform transition of the splicing areas corresponding to the first light-transmitting area and the second light-transmitting area, thereby effectively reducing the occurrence of splicing Mura.
  • the widths of the first light-transmitting area and the second light-transmitting area need to meet a certain size, for example, greater than or equal to 10 mm, which can ensure that the transition between two exposures is more gradual, thereby reducing The risk of splicing Mura.
  • complementary mosaic patterns may also be formed on the first baffle 140 and the second baffle 130 .
  • first light-transmitting area 141 and the second light-transmitting area 131 are combined with the mask for splicing exposure, the effects of the solutions shown in FIGS. 9 and 10 can also be achieved.
  • Step S160 After the exposure is completed, move the pair of baffle and mask to the adjacent exposure area of the exposure area to be exposed for exposure, until the exposure operation is completed for the multiple exposure areas.
  • the present disclosure redesigns a splicing exposure system suitable for super-large-size display panels to realize the efficient production of large-size or curved display panels and reduce the impact on cost and productivity.
  • the subject of this application can be manufactured and used in industry and has industrial applicability.

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  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A spliced exposure system and a spliced exposure method using same. By redesigning a spliced exposure system suitable for an ultra-large-size display panel, a large-size or curved-surface display panel can be efficiently manufactured, and the influence on costs and production capacity can be reduced.

Description

拼接曝光系统及采用该系统的拼接曝光方法Splicing exposure system and splicing exposure method using the system 技术领域Technical field
本揭示涉及半导体技术领域,尤其涉及一种拼接曝光系统及采用该系统的拼接曝光方法。The present disclosure relates to the field of semiconductor technology, in particular to a splicing exposure system and a splicing exposure method using the system.
背景技术Background technique
现在的面板市场中,主流尺寸正在变得越来越大。每一个时代线的光罩120尺寸是固定的,每一个光罩120都会有一个固定的有效曝光区,如图1所示。当制作的面板110尺寸比较小时,面板会完全位于光罩120(Mask,或称掩膜板)的有效曝光区以内,此时是不需要进行拼接的,曝光制程的每一个曝光都可以制作出一片或者若干片完整的面板110。当面板110尺寸进一步增大时,就有可能超出光罩的有效曝光区,经常遇到的情况是面板在一个方向的尺寸会超出光罩的有效曝光范围。In the current panel market, mainstream sizes are becoming larger and larger. The size of the photomask 120 for each era line is fixed, and each photomask 120 has a fixed effective exposure area, as shown in FIG. 1. When the size of the produced panel 110 is relatively small, the panel will be completely located within the effective exposure area of the mask 120 (Mask, or mask). At this time, splicing is not required. Every exposure in the exposure process can be produced. One or several complete panels 110. When the size of the panel 110 is further increased, it may exceed the effective exposure area of the photomask. It is often encountered that the size of the panel in one direction exceeds the effective exposure range of the photomask.
如图2所示,当显示面板110在一个方向超出光罩120的有效曝光范围后,在设计时就需要对显示面板进行分割,然后进行拼接曝光。在图2中可以看到各个曝光边缘的位置即为拼接区。在拼接曝光过程中存在的最主要问题是来自于拼接区。由于不同曝光 shot之间的照光强度,机台移动精度的限制、源漏栅极发生堆叠误差等因素,往往会在拼接区中像素其薄膜晶体管寄生电容不同,并产生不同的耦合效应,进而形成亮度显示不均匀(即Mura)。因此在这些拼接区需要采用一些特殊的设计方式。As shown in FIG. 2, when the display panel 110 exceeds the effective exposure range of the photomask 120 in one direction, the display panel needs to be divided during design, and then spliced exposure is performed. It can be seen in Figure 2 that the position of each exposure edge is the splicing area. The main problem in the stitching exposure process comes from the stitching area. Due to the light intensity between different exposure shots, the limitation of machine movement accuracy, the stacking error of source and drain gates, etc., the parasitic capacitance of the thin film transistor of the pixel in the splicing area is often different, and different coupling effects are generated. The brightness display is not uniform (ie Mura). Therefore, some special design methods need to be adopted in these splicing areas.
不同的曝光机台有不同的拼接方式,例如Nikon机台的VFS,Canon机台的SMB和其他拼接方式。对于CF(彩膜基板)制程,经常使用渐进式曝光机,但是该曝光机没有VFS或者SMB等功能,因此光罩设计时需要使用特殊技术以避免拼接区的亮度显示不均匀的产生。Different exposure machines have different splicing methods, such as VFS for Nikon machines, SMB for Canon machines and other splicing methods. For the CF (color film substrate) process, a progressive exposure machine is often used, but the exposure machine does not have functions such as VFS or SMB, so special techniques are required to avoid uneven brightness display in the splicing area when designing the mask.
技术问题technical problem
图3A和图3B中是最常用的两种避免拼接Mura的设计方式,第一种是减变图案(即Hyper Shot),它的原理是在掩膜板上的各个曝光边缘处形成一个透光率渐变的区域,靠近曝光中间位置的透光率最高,远离曝光中间位置的透光率最低(此处是以CF制程的负性光阻为例),如图3A箭头所示。第二种方式是马赛克图案,它同样是在各个曝光的边缘位置形成一图案密度渐变的区域,其马赛克图案的疏密程度如图3B所示。这两种方式可以避免在不同曝光交界处的照光强度,CD(Critical Dimension,关键尺寸)和O/L(Overlay,不同层别之间套准精度)的突变,通过采用渐变过渡的方式,改善了拼接区的亮度显示不均匀。Figure 3A and Figure 3B are the two most commonly used design methods to avoid splicing Mura. The first is the subtractive pattern (ie Hyper Shot), its principle is to form a gradual transmittance area at each exposure edge of the mask, the transmittance near the middle of the exposure is the highest, and the transmittance far away from the middle of the exposure is the lowest (here is Take the negative photoresist of the CF process as an example), as shown by the arrow in Figure 3A. The second method is a mosaic pattern, which also forms a pattern density gradient area at the edge position of each exposure, and the density of the mosaic pattern is shown in Figure 3B. These two methods can avoid the light intensity at the junction of different exposures, CD (Critical The sudden change of Dimension, key size) and O/L (Overlay, registration accuracy between different layers), by adopting a gradual transition method, improves the uneven brightness display of the splicing area.
图4是利用图2中的掩膜板制作的一个完整的大尺寸面板。通过图2所示的掩膜板制成了图4中显示面板的左侧(即标记101所在区域)和右侧(即标记103所在区域),而显示面板的中间部分B(即标记102所在区域)则是重复进行了两次曝光。Fig. 4 is a complete large-size panel made by using the mask in Fig. 2. The left side (that is, the area where the mark 101 is located) and the right side (that is, the area where the mark 103 is located) of the display panel in FIG. 4 are made through the mask shown in FIG. 2, and the middle part B of the display panel (where the mark 102 is located) Area) is repeated twice exposure.
该显示面板的制作总共进行了4次曝光,这也是Hyper Shot和马赛克Pattern设计所需要的最少曝光次数。相对于不需要拼接的机种,这样的制作方式会增加曝光次数,生产节拍时间(tact time)和产能也会因此受到比较大的影响。A total of 4 exposures were carried out for the production of the display panel, which is also the minimum number of exposures required for Hyper Shot and Mosaic Pattern designs. Compared with models that do not need to be spliced, this production method will increase the number of exposures and the tact time (tact time) and production capacity will also be greatly affected.
有鉴于此,如何实现大尺寸或曲面显示面板的高效制作并减少对成本和产能造成的影响成为相关研究者和开发人员的重点研究项目。In view of this, how to realize the efficient production of large-size or curved display panels and reduce the impact on cost and productivity has become a key research project for related researchers and developers.
技术解决方案Technical solutions
本揭示的目的在于,提供一种拼接曝光系统及采用该系统的拼接曝光方法,其通过重新设计适用于超大尺寸显示面板的拼接曝光系统,以实现大尺寸或曲面显示面板的高效制作并减少对成本和产能造成的影响。The purpose of the present disclosure is to provide a splicing exposure system and a splicing exposure method using the system. By redesigning a splicing exposure system suitable for a super-large-size display panel, it can realize the efficient production of large-size or curved display panels and reduce the risk of damage. The impact of cost and capacity.
根据本揭示的一方面,本揭示提供一种拼接曝光系统,应用于一显示面板,所述显示面板划分成多个曝光区域,其中所述拼接曝光系统包括:一掩膜板,所述掩膜板覆盖所述多个曝光区域中的其中一个曝光区域,所述掩膜板用于对所述曝光区域进行曝光;一对挡板,所述一对挡板均设置于所述掩膜板的上方,所述一对挡板包括第一挡板和一第二挡板,所述第一挡板和所述第二挡板相对设置,所述第一挡板的一侧具有一第一透光区,所述第二挡板靠近所述第一透光区的一侧具有一第二透光区,所述第一透光区的中心线和所述第二透光区的中心线的其中一条与两个相邻曝光区域的拼接线重合;所述第一透光区和所述第二透光区具有互补的渐变图案;所述第一透光区和所述第二透光区的宽度大于等于10mm。According to one aspect of the present disclosure, the present disclosure provides a splicing exposure system applied to a display panel, the display panel is divided into a plurality of exposure areas, wherein the splicing exposure system includes: a mask, the mask The plate covers one of the multiple exposure areas, the mask plate is used to expose the exposure area; a pair of baffles, the pair of baffles are both set on the mask plate Above, the pair of baffles includes a first baffle and a second baffle, the first baffle and the second baffle are arranged oppositely, and one side of the first baffle has a first transparent Light area, the side of the second baffle close to the first light transmission area has a second light transmission area, the center line of the first light transmission area and the center line of the second light transmission area are One of them coincides with the splicing lines of two adjacent exposure areas; the first light-transmitting area and the second light-transmitting area have complementary gradient patterns; the first light-transmitting area and the second light-transmitting area The width is greater than or equal to 10mm.
根据本揭示的一方面,本揭示提供了一种拼接曝光系统,应用于一显示面板,所述显示面板划分成多个曝光区域,所述拼接曝光系统包括: 一掩膜板,所述掩膜板覆盖所述多个曝光区域中的其中一个曝光区域,所述掩膜板用于对所述曝光区域进行曝光;一对挡板,所述一对挡板均设置于所述掩膜板的上方,所述一对挡板包括第一挡板和一第二挡板,所述第一挡板和所述第二挡板相对设置,所述第一挡板的一侧具有一第一透光区,所述第二挡板靠近所述第一透光区的一侧具有一第二透光区,所述第一透光区的中心线和所述第二透光区的中心线的其中一条与两个相邻曝光区域的拼接线重合。According to one aspect of the present disclosure, the present disclosure provides a splicing exposure system applied to a display panel, the display panel is divided into a plurality of exposure areas, the splicing exposure system includes: a mask, the mask The plate covers one of the multiple exposure areas, the mask plate is used to expose the exposure area; a pair of baffles, the pair of baffles are both set on the mask plate Above, the pair of baffles includes a first baffle and a second baffle, the first baffle and the second baffle are arranged oppositely, and one side of the first baffle has a first transparent Light area, the side of the second baffle close to the first light transmission area has a second light transmission area, the center line of the first light transmission area and the center line of the second light transmission area are One of them coincides with the splicing lines of two adjacent exposure areas.
在本揭示的一实施例中,所述第一透光区和所述第二透光区具有互补的渐变图案。In an embodiment of the present disclosure, the first light-transmitting area and the second light-transmitting area have complementary gradient patterns.
在本揭示的一实施例中,所述第一透光区和所述第二透光区具有互补的马赛克图案。In an embodiment of the present disclosure, the first light-transmitting area and the second light-transmitting area have complementary mosaic patterns.
在本揭示的一实施例中,所述第一透光区沿一预设方向的透光率由0连续变化至100%;所述第二透光区沿所述预设方向的透光率由100%连续变化至0。In an embodiment of the present disclosure, the light transmittance of the first light-transmitting area along a predetermined direction continuously changes from 0 to 100%; the light transmittance of the second light-transmitting area along the predetermined direction Continuously change from 100% to 0.
在本揭示的一实施例中,所述第一透光区沿一预设方向的透光率分别对应0至100%中的多个透光率;所述第二透光区沿所述预设方向的透光率分别对应100%至0中的多个透光率。In an embodiment of the present disclosure, the light transmittance of the first light-transmitting area along a predetermined direction corresponds to a plurality of light transmittances from 0 to 100%; the second light-transmitting area is along the predetermined direction. Let the light transmittance in the direction correspond to multiple light transmittances from 100% to 0, respectively.
在本揭示的一实施例中,所述第一透光区和所述第二透光区的宽度大于等于10mm。In an embodiment of the present disclosure, the widths of the first light-transmitting area and the second light-transmitting area are greater than or equal to 10 mm.
根据本揭示的另一方面,提供了一种采用上述拼接曝光系统的拼接曝光方法,所述方法包括以下步骤:提供一显示面板;将显示面板划分成多个曝光区域;在所述多个曝光区域中的其中一个曝光区域上方设置一掩膜板;在所述掩膜板的上方设置一对挡板,其中所述一对挡板包括第一挡板和一第二挡板,所述第一挡板和所述第二挡板相对设置,所述第一挡板的一侧具有一第一透光区,所述第二挡板靠近所述第一透光区的一侧具有一第二透光区,所述第一透光区的中心线和所述第二透光区的中心线的其中一条与两个相邻曝光区域的拼接线重合;通过一对挡板和掩膜板的配合设置,对待曝光的曝光区域进行曝光;以及当曝光完毕之后,平移所述一对挡板和掩膜板至所述待曝光的曝光区域的相邻曝光区域进行曝光,直至对所述多个曝光区域均完成曝光操作。According to another aspect of the present disclosure, a splicing exposure method using the splicing exposure system described above is provided. The method includes the following steps: providing a display panel; dividing the display panel into a plurality of exposure areas; A mask plate is arranged above one of the exposure areas in the area; a pair of baffles are arranged above the mask plate, wherein the pair of baffles includes a first baffle and a second baffle, the first baffle A baffle is arranged opposite to the second baffle, one side of the first baffle has a first light-transmitting area, and a side of the second baffle close to the first light-transmitting area has a first light-transmitting area. Two light transmission areas, one of the center line of the first light transmission area and the center line of the second light transmission area coincides with the splicing line of two adjacent exposure areas; through a pair of baffles and masks After the exposure is completed, the pair of baffles and mask plates are translated to the adjacent exposure area of the exposure area to be exposed for exposure until the exposure area to be exposed is exposed. All exposure areas have completed the exposure operation.
在本揭示的一实施例中,所述第一透光区和所述第二透光区具有互补的渐变图案。In an embodiment of the present disclosure, the first light-transmitting area and the second light-transmitting area have complementary gradient patterns.
在本揭示的一实施例中,所述第一透光区和所述第二透光区具有互补的马赛克图案。In an embodiment of the present disclosure, the first light-transmitting area and the second light-transmitting area have complementary mosaic patterns.
有益效果Beneficial effect
本揭示的优点在于,本揭示通过重新设计适用于超大尺寸显示面板的拼接曝光系统,以实现大尺寸或曲面显示面板的高效制作并减少对成本和产能造成的影响。The advantage of the present disclosure is that the present disclosure redesigns the splicing exposure system suitable for the super-large-size display panel to realize the efficient production of the large-size or curved display panel and reduce the impact on cost and productivity.
附图说明Description of the drawings
为了更清楚地说明本揭示实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本揭示的一些实施例,对于本领域技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to explain the technical solutions in the embodiments of the present disclosure more clearly, the following will briefly introduce the drawings needed in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.
图1是现有技术中的一种掩膜板的使用状态示意图。Fig. 1 is a schematic diagram of a use state of a mask in the prior art.
图2是现有技术中的掩膜板和显示面板的关系尺寸示意图。FIG. 2 is a schematic diagram of the relationship between the mask plate and the display panel in the prior art.
图3A和图3B分别是现有技术中常用的两种避免拼接Mura(显示亮度不均匀)的设计方式示意图。3A and 3B are respectively schematic diagrams of two design methods commonly used in the prior art to avoid splicing Mura (uneven display brightness).
图4是现有技术中的显示面板在经过四次曝光后的示意图。FIG. 4 is a schematic diagram of the display panel in the prior art after four exposures.
图5是本揭示一实施例中的掩膜板的设计示意图。FIG. 5 is a schematic diagram of the design of the mask in an embodiment of the present disclosure.
图6是本揭示一实施例中使用两次曝光完成显示面板制作的示意图。FIG. 6 is a schematic diagram of completing the manufacturing of the display panel using two exposures in an embodiment of the present disclosure.
图7是图6所示的显示面板的左半部分制作示意图。FIG. 7 is a schematic diagram of manufacturing the left half of the display panel shown in FIG. 6.
图8是图6所示的显示面板的右半部分制作示意图。FIG. 8 is a schematic diagram of manufacturing the right half of the display panel shown in FIG. 6.
图9是本揭示一实施例中通过第一挡板、第二挡板和掩膜板进行曝光制程的示意图。FIG. 9 is a schematic diagram of an exposure process performed by a first baffle, a second baffle and a mask in an embodiment of the present disclosure.
图10是图9所示的第一挡板和第二挡板与透光率的对应关系示意图。FIG. 10 is a schematic diagram of the corresponding relationship between the first baffle and the second baffle shown in FIG. 9 and the light transmittance.
图11是本揭示另一实施例中通过第一挡板、第二挡板和掩膜板进行曝光制程的示意图。FIG. 11 is a schematic diagram of the exposure process performed by the first baffle, the second baffle and the mask in another embodiment of the present disclosure.
图12是图11所示的第一挡板和第二挡板与透光率的对应关系示意图。FIG. 12 is a schematic diagram of the corresponding relationship between the first baffle and the second baffle shown in FIG. 11 and the light transmittance.
图13是本揭示的一实施例中的上述拼接曝光系统的拼接曝光方法的步骤流程图。FIG. 13 is a flowchart of the steps of the splicing exposure method of the splicing exposure system in an embodiment of the present disclosure.
本发明的实施方式Embodiments of the present invention
下面将结合本揭示实施例中的附图,对本揭示实施例中的技术方案进行清楚、完整地描述。显然,所描述的实施例仅仅是本揭示一部分实施例,而不是全部的实施例。基于本揭示中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本揭示保护的范围。The technical solutions in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by those skilled in the art without creative work shall fall within the protection scope of the present disclosure.
本揭示的说明书和权利要求书以及上述附图中的术语“第一”、“第二”、“第三”等(如果存在)是用于区别类似的对象,而不必用于描述特定的顺序或先后次序。应当理解,这样描述的对象在适当情况下可以互换。此外,术语“包括”和“具有”以及他们的任何变形,意图在于覆盖不排他的包含。The terms "first", "second", "third", etc. (if any) in the specification and claims of the present disclosure and the above-mentioned drawings are used to distinguish similar objects, and not necessarily used to describe a specific order Or precedence. It should be understood that the objects described in this way can be interchanged under appropriate circumstances. In addition, the terms "including" and "having" and any variations of them are intended to cover non-exclusive inclusions.
在本专利文档中,下文论述的附图以及用来描述本揭示公开的原理的各实施例仅用于说明,而不应解释为限制本揭示公开的范围。所属领域的技术人员将理解,本揭示的原理可在任何适当布置的系统中实施。将详细说明示例性实施方式,在附图中示出了这些实施方式的实例。此外,将参考附图详细描述根据示例性实施例的终端。附图中的相同附图标号指代相同的元件。In this patent document, the accompanying drawings discussed below and various embodiments used to describe the principle of the present disclosure are for illustration only, and should not be construed as limiting the scope of the present disclosure. Those skilled in the art will understand that the principles of the present disclosure can be implemented in any suitably arranged system. Exemplary embodiments will be described in detail, and examples of these embodiments are shown in the drawings. In addition, a terminal according to an exemplary embodiment will be described in detail with reference to the accompanying drawings. The same reference numerals in the drawings refer to the same elements.
本揭示说明书中使用的术语仅用来描述特定实施方式,而并不意图显示本揭示的概念。除非上下文中有明确不同的意义,否则,以单数形式使用的表达涵盖复数形式的表达。在本揭示说明书中,应理解,诸如“包括”、“具有”以及“含有”等术语意图说明存在本揭示说明书中揭示的特征、数字、步骤、动作或其组合的可能性,而并不意图排除可存在或可添加一个或多个其他特征、数字、步骤、动作或其组合的可能性。附图中的相同参考标号指代相同部分。The terms used in the specification of the present disclosure are only used to describe specific embodiments, and are not intended to show the concept of the present disclosure. Unless there is a clearly different meaning in the context, the expression used in the singular form encompasses the expression in the plural form. In the specification of this disclosure, it should be understood that terms such as "including", "having" and "containing" are intended to indicate the possibility of the features, numbers, steps, actions or combinations thereof disclosed in the specification of this disclosure, but not The possibility that one or more other features, numbers, steps, actions or combinations thereof may exist or may be added is excluded. The same reference numerals in the drawings refer to the same parts.
本揭示实施例提供一种拼接曝光系统及采用该系统的拼接曝光方法。以下将分别进行详细说明。The embodiments of the present disclosure provide a splicing exposure system and a splicing exposure method using the system. The detailed description will be given below.
图5是本揭示一实施例中的掩膜板的设计示意图。图6是本揭示一实施例中使用两次曝光完成显示面板制作的示意图。图7是图6所示的显示面板的左半部分制作示意图。图8是图6所示的显示面板的右半部分制作示意图。FIG. 5 is a schematic diagram of the design of the mask in an embodiment of the present disclosure. FIG. 6 is a schematic diagram of completing the manufacturing of the display panel using two exposures in an embodiment of the present disclosure. FIG. 7 is a schematic diagram of manufacturing the left half of the display panel shown in FIG. 6. FIG. 8 is a schematic diagram of manufacturing the right half of the display panel shown in FIG. 6.
由于在现有技术中,如图4所示的显示面板制作总共需要进行4次曝光,这也是采用渐变图案式(hyper shot)曝光和马赛克图案式(mosaic pattern)曝光设计方案的最少曝光次数。相对于不需要拼接机种,上述制作方式会增加曝光次数,生产节拍时间和产能也随之受到比较大的影响。因此,本揭示通过重新设计适用于超大尺寸显示面板的拼接曝光系统,以减少曝光次数。Since in the prior art, the display panel shown in FIG. 4 needs to be exposed for 4 times in total, this also adopts hyper shot exposure and mosaic pattern exposure. pattern) The minimum number of exposures to expose the design plan. Compared with splicing machines that do not need to be spliced, the above-mentioned production method will increase the number of exposures, and the production cycle time and productivity will also be greatly affected. Therefore, the present disclosure reduces the number of exposures by redesigning the splicing exposure system suitable for super-large display panels.
如图5所示,显示了显示面板110上方的掩膜板120的设计示意图。其中,标记A表示第一次曝光的曝光范围。标记B表示第二次曝光范围。As shown in FIG. 5, a schematic diagram of the design of the mask 120 above the display panel 110 is shown. Among them, mark A indicates the exposure range of the first exposure. Mark B indicates the second exposure range.
相对于图4所示的显示面板,若采用本揭示所述的掩膜板120及下文所述的挡板(包括第一挡板140和第二挡板130),只需要两次曝光便可以完成显示面板110的制作。第一次曝光完成显示面板110的左半部分101,第二次曝光完成显示面板110的右半部分102。掩膜板120中间位置的图案在两次曝光中均会使用到。Compared with the display panel shown in FIG. 4, if the mask 120 described in the present disclosure and the baffle described below (including the first baffle 140 and the second baffle 130) are used, only two exposures are required. The production of the display panel 110 is completed. The first exposure completes the left half 101 of the display panel 110, and the second exposure completes the right half 102 of the display panel 110. The pattern at the middle position of the mask 120 will be used in both exposures.
如图6所示,在使用两次曝光完成显示面板110制作过程中,仅在显示面板110的中间形成一拼接线104。因此,相较于现有技术如图4所示的显示面板制作,本揭示实现减少曝光交界线(即拼接区的拼接线104),从而减低拼接Mura的发生概率,并且降低制程的难度。As shown in FIG. 6, during the manufacturing process of the display panel 110 using two exposures, only a splicing line 104 is formed in the middle of the display panel 110. Therefore, compared with the display panel manufacturing shown in FIG. 4 in the prior art, the present disclosure realizes the reduction of the exposure boundary line (ie the splicing line 104 of the splicing area), thereby reducing the probability of splicing Mura and reducing the difficulty of the manufacturing process.
如图6所示的效果,即曝光次数的减少是通过使用本揭示所述的掩膜板120和相应的挡板来实现的。The effect shown in FIG. 6, that is, the reduction of the number of exposures is achieved by using the mask 120 and the corresponding baffle described in the present disclosure.
以下将描述掩膜板120和挡板(包括第一挡板140和第二挡板130)配合使用的工作机制。The working mechanism of the mask plate 120 and the baffle (including the first baffle 140 and the second baffle 130) in cooperation will be described below.
如图7所示,在本揭示的一实施例中,以图6所示的显示面板110的左半部分101制作为例,此时,第二挡板130将掩膜板120的右侧部分挡住,掩膜板120的左半部分照光(例如紫外光)。于是,掩膜板120上对应的图案一并会转移到显示面板110的基板上。在位于掩膜板120的右侧部分的第二挡板130的左侧边缘具有一个透光率渐变区域(即下文所述的第二透光区131),该透光率渐变区域的中心线对应于显示面板110的两个相邻曝光区域所形成的拼接区的中心线(即拼接线m),而第二挡板130的右侧部分不透光,其透光率为零。当使用本揭示拼接曝光方式时,每一次曝光的曝光面积相较于图4所示的曝光面积更大,因此,能够减少曝光制程中的曝光次数。As shown in FIG. 7, in an embodiment of the present disclosure, the production of the left half 101 of the display panel 110 shown in FIG. 6 is taken as an example. At this time, the second baffle 130 covers the right part of the mask 120 Blocked, the left half of the mask 120 is illuminated (for example, ultraviolet light). Therefore, the corresponding patterns on the mask 120 are transferred to the substrate of the display panel 110 at the same time. The left edge of the second baffle 130 located on the right part of the mask 120 has a light transmittance gradient area (that is, the second light transmittance area 131 described below), and the center line of the light transmittance gradient area Corresponding to the center line of the splicing area (ie splicing line m) formed by two adjacent exposure areas of the display panel 110, the right part of the second baffle 130 is opaque, and its light transmittance is zero. When the splicing exposure method of the present disclosure is used, the exposure area of each exposure is larger than the exposure area shown in FIG. 4, and therefore, the number of exposures in the exposure process can be reduced.
同样,如图8所示,对于第二次曝光,也采用类似的方式进行,以图6所示的显示面板110的右半部分102制作为例。第一挡板140将掩膜板120的左侧部分挡住,掩膜板120的右半部分照光(例如紫外光)。于是,掩膜板120上对应的图案一并会转移到显示面板110的基板上。在位于掩膜板120的左侧部分的第一挡板140的右侧边缘具有一个透光率渐变区域(即下文所述的第一透光区141),该透光率渐变区域的中心线对应于显示面板110的两个相邻曝光区域所形成的拼接区的中心线(即拼接线n),而第一挡板140的左侧部分不透光,其透光率为零。Similarly, as shown in FIG. 8, the second exposure is also performed in a similar manner, taking the production of the right half 102 of the display panel 110 shown in FIG. 6 as an example. The first baffle 140 blocks the left part of the mask 120, and the right half of the mask 120 illuminates light (for example, ultraviolet light). Therefore, the corresponding patterns on the mask 120 are transferred to the substrate of the display panel 110 at the same time. At the right edge of the first baffle 140 located on the left side of the mask 120, there is a light transmittance gradient area (that is, the first light transmittance area 141 described below), and the center line of the light transmittance gradient area Corresponding to the center line of the splicing area (ie splicing line n) formed by two adjacent exposure areas of the display panel 110, the left part of the first baffle 140 is opaque, and its light transmittance is zero.
对于显示面板110的基板(图中未标注)而言,第二次曝光中的第一挡板140的透光率渐变区域与第一次曝光中的第二挡板130的透光率渐变区域在所述基板上的投影为重合,该区域即为显示面板110的两个相邻曝光区域所形成的拼接区。For the substrate of the display panel 110 (not marked in the figure), the light transmittance gradient area of the first baffle 140 in the second exposure and the light transmittance gradient area of the second baffle 130 in the first exposure The projections on the substrate are overlapped, and this area is a splicing area formed by two adjacent exposure areas of the display panel 110.
根据上文所述的拼接曝光系统的新设计思想,于是,提出以下的拼接曝光系统。该拼接曝光系统应用于一显示面板110,其中所述显示面板110划分成多个曝光区域(例如图6所示标记101和标记102)。所述显示面板110划分成多个曝光区域,这些曝光区域的面积大小可以为相同或者不同。According to the new design idea of the splicing exposure system described above, the following splicing exposure system is proposed. The splicing exposure system is applied to a display panel 110, wherein the display panel 110 is divided into a plurality of exposure areas (for example, the mark 101 and the mark 102 shown in FIG. 6). The display panel 110 is divided into a plurality of exposure areas, and the area sizes of the exposure areas may be the same or different.
所述拼接曝光系统包括: 一掩膜板120和一对挡板170。其中,所述掩膜板120覆盖所述多个曝光区域中的其中一个曝光区域(例如图6所示的标记101或标记102),所述掩膜板120用于对所述曝光区域进行曝光。亦即,所述掩膜板120用于对显示面板110的基板中的某一个曝光区域进行曝光。The splicing exposure system includes: a mask 120 and a pair of baffles 170. Wherein, the mask 120 covers one of the multiple exposure areas (for example, the mark 101 or the mark 102 shown in FIG. 6), and the mask 120 is used for exposing the exposure area . That is, the mask 120 is used to expose a certain exposure area in the substrate of the display panel 110.
所述一对挡板均设置于所述掩膜板的上方,所述一对挡板170包括第一挡板140和一第二挡板130。所述第一挡板140和所述第二挡板130相对设置。其中,所述第一挡板140和所述第二挡板130可以为间隔设置。进一步,所述第一挡板140的一侧具有一第一透光区141,所述第二挡板130靠近所述第一透光区141的一侧具有一第二透光区131,所述第一透光区的中心线和所述第二透光区的中心线的其中一条与两个相邻曝光区域的拼接线(如图7中的标记m或如图8中的标记n)重合。The pair of baffles are both disposed above the mask plate, and the pair of baffles 170 include a first baffle 140 and a second baffle 130. The first baffle 140 and the second baffle 130 are arranged opposite to each other. Wherein, the first baffle 140 and the second baffle 130 may be arranged at intervals. Further, one side of the first baffle 140 has a first light-transmitting area 141, and a side of the second baffle 130 close to the first light-transmitting area 141 has a second light-transmitting area 131, so The splicing line between one of the center line of the first light-transmitting area and the center line of the second light-transmitting area and two adjacent exposure areas (mark m in FIG. 7 or mark n in FIG. 8) coincide.
图9是本揭示一实施例中进行曝光制程的示意图。图10是图9所示的第一挡板140和第二挡板130与透光率的对应关系示意图。FIG. 9 is a schematic diagram of an exposure process in an embodiment of the present disclosure. FIG. 10 is a schematic diagram of the corresponding relationship between the first baffle 140 and the second baffle 130 shown in FIG. 9 and the light transmittance.
如图9和图10所示的一实施例中,所述第一透光区141和所述第二透光131区具有互补的渐变图案。In an embodiment shown in FIGS. 9 and 10, the first light-transmitting area 141 and the second light-transmitting area 131 have complementary gradient patterns.
具体的,在曝光时,第一挡板140(如图9所示的左侧挡板)和第二挡板130(如图9所示的右侧挡板)均位于掩膜板120的上方。第一挡板140的右侧具有一第一透光区141,第二挡板130的左侧具有一第二透光区131。Specifically, during exposure, the first baffle 140 (the left baffle shown in FIG. 9) and the second baffle 130 (the right baffle shown in FIG. 9) are both located above the mask plate 120 . The right side of the first baffle 140 has a first light-transmitting area 141, and the left side of the second baffle 130 has a second light-transmitting area 131.
第一透光区141具有一渐变图案,因此,第一透光区141的透光率具有相应的递变,例如递增或递减,以使穿过该第一透光区141的紫外光透过率能够相应的递变如递增或递减。同样的,第二透光区131也具有一渐变图案,因此,第二透光区131的透光率具有相应的递变,例如递增或递减,以使穿过该第二透光区131的紫外光透过率能够相应的递变如递增或递减。The first light-transmitting area 141 has a gradual pattern. Therefore, the light transmittance of the first light-transmitting area 141 has a corresponding gradation, such as increasing or decreasing, so that the ultraviolet light passing through the first light-transmitting area 141 can be transmitted. The rate can change accordingly such as increasing or decreasing. Similarly, the second light-transmitting area 131 also has a gradual pattern. Therefore, the light transmittance of the second light-transmitting area 131 has a corresponding gradual change, such as increasing or decreasing, so that the light passing through the second light-transmitting area 131 The transmittance of ultraviolet light can be changed accordingly, such as increasing or decreasing.
由于第一透光区141和第二透光区131具有互补的渐变图案,因此,当第一透光区141的透光率为递减时,第二透光区131的透光率为递增。当第一透光区141的透光率为递增时,第二透光区131的透光率为递减。Since the first light-transmitting area 141 and the second light-transmitting area 131 have complementary gradual patterns, when the light transmittance of the first light-transmitting area 141 decreases, the light transmittance of the second light-transmitting area 131 increases. When the light transmittance of the first light-transmitting area 141 increases, the light transmittance of the second light-transmitting area 131 decreases.
进一步,在一预设方向(以第一挡板140的长度方向为准),例如从左至右,如图10中的箭头方向所示,第一透光区141的透光率由0连续变化至100%,则所述第二透光区131沿所述预设方向的透光率由100%连续变化至0。当然,在其他部分实施例中,在一预设方向(以第一挡板140的长度方向为准),例如从右至左,第一透光区141的透光率也可以由100%连续变化至0,则所述第二透光区131沿所述预设方向的透光率由0连续变化至100%。Further, in a predetermined direction (based on the length direction of the first baffle 140), for example, from left to right, as shown by the arrow direction in FIG. 10, the light transmittance of the first light transmission area 141 is continuous from 0 If it changes to 100%, the light transmittance of the second light-transmitting area 131 along the predetermined direction continuously changes from 100% to 0. Of course, in other embodiments, in a predetermined direction (based on the length of the first baffle 140), for example, from right to left, the light transmittance of the first light-transmitting area 141 can also be continuous from 100%. If it changes to 0, the light transmittance of the second light-transmitting area 131 along the predetermined direction continuously changes from 0 to 100%.
当曝光如图6所示的显示面板110的左侧部分101时,第一透光区141的中心线和第二透光区131的中心线的其中一条中心线(此处为第二透光区131的中心线)与两个相邻曝光区域的拼接线(如图7所示的标记m)重合。结合参考图5所示,此时第一透光区141位于左侧曝光区域侧外侧,已超出曝光范围而不起作用。当曝光如图6所示的显示面板110的右侧部分102时,第一透光区141的中心线和第二透光区131的中心线的其中一条中心线(此处为第一透光区的中心线)与两个相邻曝光区域的拼接线(如图8所示的标记n)重合。结合参考图5所示,此时第二透光区131位于右侧曝光区域侧外侧,已超出曝光范围而不起作用。When the left part 101 of the display panel 110 as shown in FIG. 6 is exposed, one of the center line of the first light-transmitting area 141 and the center line of the second light-transmitting area 131 (here, the second light-transmitting area) The center line of the area 131) coincides with the splicing line (mark m as shown in FIG. 7) of two adjacent exposure areas. As shown in FIG. 5 in conjunction with reference, at this time, the first light-transmitting area 141 is located outside the left side of the exposure area, and has exceeded the exposure range and does not work. When the right portion 102 of the display panel 110 as shown in FIG. 6 is exposed, one of the center line of the first light-transmitting area 141 and the center line of the second light-transmitting area 131 (here, the first light-transmitting area) The center line of the area) coincides with the splicing line of two adjacent exposure areas (mark n as shown in Figure 8). With reference to FIG. 5, at this time, the second light-transmitting area 131 is located outside the exposure area on the right side, and has exceeded the exposure range and does not work.
由于第一透光区141的透光率沿预设方向(如图10所示的箭头方向)呈线性变化,即从0连续变化至100%,而第二透光区131的透光率沿预设方向也呈线性变化,由100%连续变化至0,因此,当采用两个相对设置的第一挡板140和第二挡板130并配合掩膜板120进行拼接曝光时,能够方便地进行光强控制,使得经过第一挡板140和第二挡板130的两次曝光之后能够达到完全曝光强度。Since the light transmittance of the first light-transmitting area 141 changes linearly along the preset direction (the arrow direction as shown in FIG. 10), that is, it continuously changes from 0 to 100%, and the light transmittance of the second light-transmitting area 131 is along The preset direction also changes linearly, continuously changing from 100% to 0. Therefore, when two oppositely arranged first baffle 140 and second baffle 130 are used and the mask 120 is used for splicing exposure, it can be conveniently The light intensity is controlled so that the full exposure intensity can be reached after two exposures of the first baffle 140 and the second baffle 130.
当所述第一透光区141和所述第二透光区131在所对应的拼接区叠加后,两者的透光率之和正好全部等于100%,由于第一透光区141和第二透光区131的透光率呈线性变化,因此,有利于保证第一透光区141和第二透光区131所对应的拼接区的均匀过渡,从而有效降低拼接Mura的产生。进一步,在本实施例中,所述第一透光区141和所述第二透光区131的宽度需满足一定尺寸,例如大于等于10mm,这样能够保证两次曝光之间的过渡更加缓和,进而降低拼接Mura 发生的风险。When the first light-transmitting area 141 and the second light-transmitting area 131 are superimposed in the corresponding splicing area, the sum of the light transmittance of the two is exactly equal to 100%, because the first light-transmitting area 141 and the second light-transmitting area 141 The light transmittance of the two light-transmitting regions 131 changes linearly, so it is beneficial to ensure a uniform transition of the splicing areas corresponding to the first light-transmitting area 141 and the second light-transmitting area 131, thereby effectively reducing the occurrence of splicing Mura. Further, in this embodiment, the widths of the first light-transmitting area 141 and the second light-transmitting area 131 need to meet a certain size, for example, greater than or equal to 10 mm, which can ensure that the transition between two exposures is more relaxed. This reduces the risk of splicing Mura.
在本揭示的其他实施例中,所述第一透光区141沿一预设方向(以第一挡板140的长度方向为准),例如从左至右,其透光率由0间断变化至100%,即分别对应0至100%中的多个透光率,例如0、30%、60%、100%,而所述第二透光131区沿所述预设方向的透光率由100%间断变化至0,即分别对应100%至0中的多个透光率,例如100%、70%、40%、0。In other embodiments of the present disclosure, the first light-transmitting area 141 is along a predetermined direction (based on the length direction of the first baffle 140), for example, from left to right, the light transmittance thereof is intermittently changed from 0 To 100%, which respectively correspond to multiple light transmittances from 0 to 100%, such as 0, 30%, 60%, 100%, and the light transmittance of the second light-transmitting area 131 along the predetermined direction The intermittent change from 100% to 0 corresponds to multiple transmittances from 100% to 0, such as 100%, 70%, 40%, and 0.
除了上述如图9和图10所示的第一挡板140和第二挡板130具有互补的渐变图案之外,也可以在第一挡板140和第二挡板130上形成互补的马赛克图案,具体如下文所述。In addition to the above-mentioned first baffle 140 and second baffle 130 as shown in FIGS. 9 and 10 having complementary gradient patterns, complementary mosaic patterns may also be formed on the first baffle 140 and the second baffle 130 , As described below.
图11是本揭示另一实施例中进行曝光制程的示意图。图12是图11所示的第一挡板和第二挡板130与透光率的对应关系示意图。FIG. 11 is a schematic diagram of an exposure process in another embodiment of the present disclosure. FIG. 12 is a schematic diagram of the corresponding relationship between the first baffle and the second baffle 130 shown in FIG. 11 and the light transmittance.
结合参考图11和图12,所述第一透光区和所述第二透光区具有互补的马赛克图案。11 and 12 in combination, the first light-transmitting area and the second light-transmitting area have complementary mosaic patterns.
具体的,在曝光时,第一挡板140(如图11所示的左侧挡板)和第二挡板130(如图12所示的右侧挡板)均位于掩膜板120的上方。第一挡板140的右侧具有一第一透光区141,第二挡板130的左侧具有一第二透光区131。Specifically, during exposure, the first baffle 140 (the left baffle as shown in FIG. 11) and the second baffle 130 (the right baffle as shown in FIG. 12) are both located above the mask plate 120. . The right side of the first baffle 140 has a first light-transmitting area 141, and the left side of the second baffle 130 has a second light-transmitting area 131.
第一透光区141具有一定宽度的马赛克图案密度渐变的马赛克图案区,因此,第一透光区的透光率具有相应的递变,例如递增或递减,以使穿过该第一透光区141的紫外光透过率能够相应的递变如递增或递减。同样的,第二透光区131也具有一定宽度的密度渐变的马赛克图案区,因此,第二透光区131的透光率具有相应的递变,例如递增或递减,以使穿过该第二透光区131的紫外光透过率能够相应的递变如递增或递减。The first light-transmitting area 141 has a certain width of the mosaic pattern area with a gradual mosaic pattern density. Therefore, the light transmittance of the first light-transmitting area has a corresponding gradation, such as increasing or decreasing, so as to pass through the first light-transmitting area. The ultraviolet light transmittance of the area 141 can correspondingly change, such as increasing or decreasing. Similarly, the second light-transmitting area 131 also has a certain width of the mosaic pattern area with gradual density. Therefore, the light transmittance of the second light-transmitting area 131 has a corresponding gradual change, such as increasing or decreasing, so as to pass through the second light-transmitting area 131. The ultraviolet light transmittance of the two light-transmitting regions 131 can correspondingly change, such as increasing or decreasing.
由于第一透光区141和第二透光区131具有互补的马赛克图案,因此,当第一透光区141的透光率为递减时,第二透光区131的透光率为递增。当第一透光区141的透光率为递增时,第二透光区131的透光率为递减。Since the first light transmission area 141 and the second light transmission area 131 have complementary mosaic patterns, when the light transmittance of the first light transmission area 141 decreases, the light transmittance of the second light transmission area 131 increases. When the light transmittance of the first light-transmitting area 141 increases, the light transmittance of the second light-transmitting area 131 decreases.
进一步,在一预设方向(以第一挡板140的长度方向为准),例如从左至右,如图12中的箭头方向所示,第一透光区141的左侧密度高,右侧密度低,则所述第二透光区131沿所述预设方向在其左侧密度低,右侧密度高。当第一透光区141和第二透光区131并配合掩膜板120进行拼接曝光时,同样可以达到如图9和图10所示方案的效果。Further, in a predetermined direction (based on the length direction of the first baffle 140), for example, from left to right, as shown by the arrow direction in FIG. 12, the density of the left side of the first light-transmitting region 141 is high, and the right If the side density is low, the second light-transmitting area 131 has a low density on the left side and a high density on the right side along the predetermined direction. When the first light-transmitting area 141 and the second light-transmitting area 131 cooperate with the mask 120 for splicing exposure, the effects of the solutions shown in FIGS. 9 and 10 can also be achieved.
图13为本揭示的一实施例中的上述拼接曝光系统的拼接曝光方法的步骤流程图。其中,所述拼接曝光系统为上文所述的系统,在此不再赘述。FIG. 13 is a flow chart of the steps of the splicing exposure method of the splicing exposure system in an embodiment of the disclosure. Wherein, the splicing exposure system is the system described above, and will not be repeated here.
参见图13,所述方法包括以下步骤:Referring to Figure 13, the method includes the following steps:
步骤S110:提供一显示面板。Step S110: Provide a display panel.
步骤S120:将显示面板划分成多个曝光区域。Step S120: divide the display panel into multiple exposure areas.
步骤S130:在所述多个曝光区域中的其中一个曝光区域上方设置一掩膜板。Step S130: setting a mask above one of the multiple exposure areas.
步骤S140:在所述掩膜板的上方设置一对挡板,其中所述一对挡板包括第一挡板和一第二挡板,所述第一挡板和所述第二挡板相对设置,所述第一挡板的一侧具有一第一透光区,所述第二挡板靠近所述第一透光区的一侧具有一第二透光区,所述第一透光区的中心线和所述第二透光区的中心线的其中一条与两个相邻曝光区域的拼接线重合。Step S140: Set a pair of baffles above the mask plate, wherein the pair of baffles include a first baffle and a second baffle, and the first baffle and the second baffle are opposite to each other. Provided that one side of the first baffle has a first light-transmitting area, and the side of the second baffle close to the first light-transmitting area has a second light-transmitting area, and the first light-transmitting area One of the center line of the area and the center line of the second light-transmitting area coincides with the splicing line of two adjacent exposure areas.
步骤S150:通过一对挡板和掩膜板的配合设置,对待曝光的曝光区域进行曝光。Step S150: Expose the exposed area to be exposed through a pair of baffles and masks.
在曝光时,第一挡板(如图9所示的左侧挡板)和第二挡板(如图9所示的右侧挡板)均位于掩膜板的上方。第一挡板的右侧具有一第一透光区,第二挡板的左侧具有一第二透光区。During exposure, the first baffle (the left baffle as shown in FIG. 9) and the second baffle (the right baffle as shown in FIG. 9) are both located above the mask plate. The right side of the first baffle has a first light-transmitting area, and the left side of the second baffle has a second light-transmitting area.
第一透光区具有一渐变图案,因此,第一透光区的透光率具有相应的递变,例如递增或递减,以使穿过该第一透光区的紫外光透过率能够相应的递变如递增或递减。同样的,第二透光区也具有一渐变图案,因此,第二透光区的透光率具有相应的递变,例如递增或递减,以使穿过该第二透光区的紫外光透过率能够相应的递变如递增或递减。The first light-transmitting area has a gradual pattern. Therefore, the light transmittance of the first light-transmitting area has a corresponding gradation, such as increasing or decreasing, so that the transmittance of ultraviolet light passing through the first light-transmitting area can be correspondingly changed. The gradual changes such as increasing or decreasing. Similarly, the second light-transmitting area also has a gradual pattern. Therefore, the light transmittance of the second light-transmitting area has a corresponding gradation, such as increasing or decreasing, so that the ultraviolet light passing through the second light-transmitting area is transparent. The overrate can change accordingly such as increasing or decreasing.
由于第一透光区和第二透光区具有互补的渐变图案,因此,当第一透光区的透光率为递减时,第二透光区的透光率为递增。当第一透光区的透光率为递增时,第二透光区的透光率为递减。Since the first light transmission area and the second light transmission area have complementary gradual patterns, when the light transmittance of the first light transmission area decreases, the light transmittance of the second light transmission area increases. When the light transmittance of the first light-transmitting area increases, the light transmittance of the second light-transmitting area decreases.
进一步,在一预设方向(以第一挡板的长度方向为准),例如从左至右,如图10中的箭头方向所示,第一透光区的透光率由0连续变化至100%,则所述第二透光区沿所述预设方向的透光率由100%连续变化至0。当然,在其他部分实施例中,在一预设方向(以第一挡板的长度方向为准),例如从右至左,第一透光区的透光率也可以由100%连续变化至0,则所述第二透光区沿所述预设方向的透光率由0连续变化至100%。Further, in a preset direction (based on the length direction of the first baffle), for example, from left to right, as shown by the arrow direction in FIG. 10, the light transmittance of the first light transmission area continuously changes from 0 to 100%, the light transmittance of the second light-transmitting area along the predetermined direction continuously changes from 100% to 0. Of course, in other embodiments, in a predetermined direction (based on the length of the first baffle), for example, from right to left, the light transmittance of the first light-transmitting area can also be continuously changed from 100% to 0, the light transmittance of the second light-transmitting area along the predetermined direction continuously changes from 0 to 100%.
当曝光如图6所示的显示面板的左侧部分时,第一透光区的中心线和第二透光区的中心线中的其中一条中心线(此处为第二透光区的中心线)与两个相邻曝光区域的拼接线重合。结合参考图5所示,此时第一透光区位于左侧曝光区域侧外侧,已超出曝光范围而不起作用。当曝光如图6所示的显示面板的右侧部分时,第一透光区的中心线和第二透光区的中心线中的其中一条中心线(此处为第一透光区的中心线)与两个相邻曝光区域的拼接线重合。结合参考图5所示,此时第二透光区位于右侧曝光区域侧外侧,已超出曝光范围而不起作用。When exposing the left part of the display panel as shown in FIG. 6, one of the center line of the first light-transmitting area and the center line of the second light-transmitting area (here is the center of the second light-transmitting area) Line) coincides with the stitching lines of two adjacent exposure areas. With reference to FIG. 5, at this time, the first light-transmitting area is located on the outer side of the left side of the exposure area, which has exceeded the exposure range and does not work. When exposing the right part of the display panel as shown in FIG. 6, one of the center line of the first light-transmitting area and the center line of the second light-transmitting area (here is the center of the first light-transmitting area) Line) coincides with the stitching lines of two adjacent exposure areas. As shown in FIG. 5 in conjunction with reference, at this time, the second light-transmitting area is located outside the exposure area on the right side, which has exceeded the exposure range and has no effect.
由于第一透光区的透光率沿预设方向(如如图10所示的箭头方向)呈线性变化,即从0连续变化至100%,而第二透光区的透光率沿预设方向也呈线性变化,由100%连续变化至0,因此,当采用两个相对设置的第一挡板和第二挡板并配合掩膜板进行拼接曝光时,能够方便地进行光强控制,使得经过第一挡板和第二挡板的两次曝光之后能够达到完全曝光强度。Since the light transmittance of the first light-transmitting area changes linearly along the preset direction (such as the arrow direction as shown in Figure 10), that is, it continuously changes from 0 to 100%, while the light transmittance of the second light-transmitting area changes along the predetermined direction. The setting direction also changes linearly, continuously changing from 100% to 0. Therefore, when two oppositely arranged first baffle and second baffle are used and the mask is used for splicing exposure, the light intensity control can be conveniently performed , So that the full exposure intensity can be reached after two exposures of the first baffle and the second baffle.
当所述第一透光区和所述第二透光区在所对应的拼接区叠加后,两者的透光率之和正好全部等于100%,由于第一透光区和第二透光区的透光率呈线性变化,因此,有利于保证第一透光区和第二透光区所对应的拼接区的均匀过渡,从而有效降低拼接Mura的产生。进一步,在本实施例中,所述第一透光区和所述第二透光区的宽度需满足一定尺寸,例如大于等于10mm,这样能够保证两次曝光之间的过渡更加缓和,进而降低拼接Mura 发生的风险。When the first light-transmitting area and the second light-transmitting area are superimposed in the corresponding splicing area, the sum of the light transmittance of the two is exactly equal to 100%, because the first light-transmitting area and the second light-transmitting area The light transmittance of the area changes linearly, so it is beneficial to ensure a uniform transition of the splicing areas corresponding to the first light-transmitting area and the second light-transmitting area, thereby effectively reducing the occurrence of splicing Mura. Further, in this embodiment, the widths of the first light-transmitting area and the second light-transmitting area need to meet a certain size, for example, greater than or equal to 10 mm, which can ensure that the transition between two exposures is more gradual, thereby reducing The risk of splicing Mura.
除了上述如图9和图10所示的第一挡板140和第二挡板130具有互补的渐变图案之外,也可以在第一挡板140和第二挡板130上形成互补的马赛克图案。当第一透光区141和第二透光区131并配合掩膜板进行拼接曝光时,同样可以达到如图9和图10所示方案的效果。In addition to the above-mentioned first baffle 140 and second baffle 130 as shown in FIGS. 9 and 10 having complementary gradient patterns, complementary mosaic patterns may also be formed on the first baffle 140 and the second baffle 130 . When the first light-transmitting area 141 and the second light-transmitting area 131 are combined with the mask for splicing exposure, the effects of the solutions shown in FIGS. 9 and 10 can also be achieved.
步骤S160:当曝光完毕之后,平移所述一对挡板和掩膜板至所述待曝光的曝光区域的相邻曝光区域进行曝光,直至对所述多个曝光区域均完成曝光操作。Step S160: After the exposure is completed, move the pair of baffle and mask to the adjacent exposure area of the exposure area to be exposed for exposure, until the exposure operation is completed for the multiple exposure areas.
本揭示通过重新设计适用于超大尺寸显示面板的拼接曝光系统,以实现大尺寸或曲面显示面板的高效制作并减少对成本和产能造成的影响。The present disclosure redesigns a splicing exposure system suitable for super-large-size display panels to realize the efficient production of large-size or curved display panels and reduce the impact on cost and productivity.
以上所述仅是本揭示的优选实施方式,应当指出,对于本技术领域的普通技术人员,在不脱离本揭示原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本揭示的保护范围。The above are only the preferred embodiments of the present disclosure. It should be pointed out that for those of ordinary skill in the art, without departing from the principles of the present disclosure, several improvements and modifications can be made, and these improvements and modifications should also be considered The scope of protection of this disclosure.
工业实用性Industrial applicability
本申请的主题可以在工业中制造和使用,具备工业实用性。The subject of this application can be manufactured and used in industry and has industrial applicability.

Claims (10)

  1. 一种拼接曝光系统,应用于一显示面板,所述显示面板划分成多个曝光区域,其中所述拼接曝光系统包括:A splicing exposure system is applied to a display panel, the display panel is divided into a plurality of exposure areas, wherein the splicing exposure system includes:
    一掩膜板,所述掩膜板覆盖所述多个曝光区域中的其中一个曝光区域,所述掩膜板用于对所述曝光区域进行曝光;A mask, the mask covering one of the plurality of exposure regions, and the mask is used for exposing the exposure region;
    一对挡板,所述一对挡板均设置于所述掩膜板的上方,所述一对挡板包括第一挡板和一第二挡板,所述第一挡板和所述第二挡板相对设置,所述第一挡板的一侧具有一第一透光区,所述第二挡板靠近所述第一透光区的一侧具有一第二透光区,所述第一透光区的中心线和所述第二透光区的中心线的其中一条与两个相邻曝光区域的拼接线重合;A pair of baffles, the pair of baffles are both arranged above the mask plate, the pair of baffles include a first baffle and a second baffle, the first baffle and the first baffle Two baffles are arranged opposite to each other, one side of the first baffle has a first light transmission area, and the side of the second baffle close to the first light transmission area has a second light transmission area. One of the center line of the first light-transmitting area and the center line of the second light-transmitting area coincides with the splicing line of two adjacent exposure areas;
    所述第一透光区和所述第二透光区具有互补的渐变图案;The first light-transmitting area and the second light-transmitting area have complementary gradient patterns;
    所述第一透光区和所述第二透光区的宽度大于等于10mm。The width of the first light-transmitting area and the second light-transmitting area is greater than or equal to 10 mm.
  2. 一种拼接曝光系统,应用于一显示面板,所述显示面板划分成多个曝光区域,其中所述拼接曝光系统包括:A splicing exposure system is applied to a display panel, the display panel is divided into a plurality of exposure areas, wherein the splicing exposure system includes:
    一掩膜板,所述掩膜板覆盖所述多个曝光区域中的其中一个曝光区域,所述掩膜板用于对所述曝光区域进行曝光;A mask, the mask covering one of the plurality of exposure regions, and the mask is used for exposing the exposure region;
    一对挡板,所述一对挡板均设置于所述掩膜板的上方,所述一对挡板包括第一挡板和一第二挡板,所述第一挡板和所述第二挡板相对设置,所述第一挡板的一侧具有一第一透光区,所述第二挡板靠近所述第一透光区的一侧具有一第二透光区,所述第一透光区的中心线和所述第二透光区的中心线的其中一条与两个相邻曝光区域的拼接线重合。A pair of baffles, the pair of baffles are both arranged above the mask plate, the pair of baffles include a first baffle and a second baffle, the first baffle and the first baffle Two baffles are arranged opposite to each other, one side of the first baffle has a first light transmission area, and the side of the second baffle close to the first light transmission area has a second light transmission area. One of the center line of the first light transmission area and the center line of the second light transmission area coincides with the splicing line of two adjacent exposure areas.
  3. 根据权利要求2所述的拼接曝光系统,其中所述第一透光区和所述第二透光区具有互补的渐变图案。3. The splicing exposure system according to claim 2, wherein the first light-transmitting area and the second light-transmitting area have complementary gradient patterns.
  4. 根据权利要求2所述的拼接曝光系统,其中所述第一透光区和所述第二透光区具有互补的马赛克图案。3. The splicing exposure system according to claim 2, wherein the first light-transmitting area and the second light-transmitting area have complementary mosaic patterns.
  5. 根据权利要求3所述的拼接曝光系统,其中所述第一透光区沿一预设方向的透光率由0连续变化至100%;所述第二透光区沿所述预设方向的透光率由100%连续变化至0。The splicing exposure system according to claim 3, wherein the transmittance of the first light-transmitting area along a predetermined direction continuously changes from 0 to 100%; and the light-transmitting area of the second light-transmitting area along the predetermined direction is continuously changed from 0 to 100%. The light transmittance continuously changes from 100% to 0.
  6. 根据权利要求3所述的拼接曝光系统,其中所述第一透光区沿一预设方向的透光率分别对应0至100%中的多个透光率;所述第二透光区沿所述预设方向的透光率分别对应100%至0中的多个透光率。The splicing exposure system according to claim 3, wherein the light transmittance of the first light-transmitting area along a predetermined direction respectively corresponds to a plurality of light transmittances from 0 to 100%; the second light-transmitting area is along The light transmittance in the preset direction corresponds to a plurality of light transmittances from 100% to 0, respectively.
  7. 根据权利要求2所述的拼接曝光系统,其中所述第一透光区和所述第二透光区的宽度大于等于10mm。3. The splicing exposure system according to claim 2, wherein the widths of the first light-transmitting area and the second light-transmitting area are greater than or equal to 10 mm.
  8. 一种采用权利要求2所述拼接曝光系统的拼接曝光方法,其包括以下步骤:A splicing exposure method using the splicing exposure system of claim 2, which comprises the following steps:
    提供一显示面板;Provide a display panel;
    将所述显示面板划分成多个曝光区域;Dividing the display panel into multiple exposure areas;
    在所述多个曝光区域中的其中一个曝光区域上方设置一掩膜板;Setting a mask plate above one of the multiple exposure areas;
    在所述掩膜板的上方设置一对挡板,其中所述一对挡板包括第一挡板和一第二挡板,所述第一挡板和所述第二挡板相对设置,所述第一挡板的一侧具有一第一透光区,所述第二挡板靠近所述第一透光区的一侧具有一第二透光区,所述第一透光区的中心线和所述第二透光区的中心线的其中一条与两个相邻曝光区域的拼接线重合;A pair of baffles is provided above the mask plate, wherein the pair of baffles includes a first baffle and a second baffle, the first baffle and the second baffle are arranged oppositely, so One side of the first baffle has a first light-transmitting area, the second baffle has a second light-transmitting area on the side close to the first light-transmitting area, and the center of the first light-transmitting area One of the line and the center line of the second light-transmitting area coincides with the splicing line of two adjacent exposure areas;
    通过一对挡板和掩膜板的配合设置,对待曝光的曝光区域进行曝光;以及Expose the exposed area to be exposed through the coordinated arrangement of a pair of baffles and masks; and
    当曝光完毕之后,平移所述一对挡板和掩膜板至所述待曝光的曝光区域的相邻曝光区域进行曝光,直至对所述多个曝光区域均完成曝光操作。After the exposure is completed, the pair of baffles and the mask are translated to the adjacent exposure area of the exposure area to be exposed for exposure, until the exposure operation is completed for the multiple exposure areas.
  9. 根据权利要求8所述的拼接曝光方法,其中所述第一透光区和所述第二透光区具有互补的渐变图案。8. The splicing exposure method according to claim 8, wherein the first light-transmitting area and the second light-transmitting area have complementary gradient patterns.
  10. 根据权利要求8所述的拼接曝光方法,其中所述第一透光区和所述第二透光区具有互补的马赛克图案。8. The splicing exposure method according to claim 8, wherein the first light-transmitting area and the second light-transmitting area have complementary mosaic patterns.
PCT/CN2019/117324 2019-10-10 2019-11-12 Spliced exposure system and spliced exposure method using same WO2021068328A1 (en)

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CN111258171A (en) * 2020-01-21 2020-06-09 中国科学院微电子研究所 Novel mask plate for manufacturing display panel and preparation method thereof
CN113671789A (en) * 2020-05-14 2021-11-19 咸阳彩虹光电科技有限公司 Photomask, exposure method and exposure system
CN114236972B (en) * 2021-12-13 2023-06-27 Tcl华星光电技术有限公司 Display panel, preparation method thereof and display device

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