CN113805425A

CN113805425A - Mask plate, manufacturing method of film layer, display substrate and display device

Info

Publication number: CN113805425A
Application number: CN202111124059.8A
Authority: CN
Inventors: 王文超; 徐旭; 徐姗姗; 胡龙敢; 陈小龙
Original assignee: BOE Technology Group Co Ltd; Fuzhou BOE Optoelectronics Technology Co Ltd
Current assignee: BOE Technology Group Co Ltd; Fuzhou BOE Optoelectronics Technology Co Ltd
Priority date: 2021-09-24
Filing date: 2021-09-24
Publication date: 2021-12-17

Abstract

The application provides a mask plate, a manufacturing method of a film layer, a display substrate and a display device, wherein the mask plate comprises a plurality of mask graphs, the mask graphs comprise a first graph and a second graph, and the first graph comprises a first sub graph and a second sub graph which are respectively located at two opposite edges of the mask plate; the second graph comprises a plurality of sub-unit graphs, the sub-unit graphs are arranged along the direction that one sub-graph points to the second graph, and in the direction that the first sub-graph points to the second graph, at least part of the sub-unit graphs in the sub-unit graphs are arranged at intervals. By arranging at least part of the subunit graphs at intervals, in the process of producing the display panel in a splicing exposure mode, repeated exposure of the subunit graphs caused by exposure gray areas at the edges of the baffles when no interval exists between the subunit graphs is avoided, the problems of uneven splicing seams and uneven pictures of a plurality of subunit graphs at the splicing positions are solved, and the display quality is improved.

Description

Mask plate, manufacturing method of film layer, display substrate and display device

Technical Field

The application relates to the technical field of display, in particular to a mask plate, a manufacturing method of a film layer, a display substrate and a display device.

Background

A Mask (Mask), also called a Photo Mask (Photo Mask), is a pattern master used in a photolithography process, and Mask patterns are generally formed on a display substrate by a light-opaque light-shielding film (e.g., chrome metal). Different sizes of display panels require different sizes of masks in production.

In order to save cost and improve the compatibility of the mask plate, the same mask plate is utilized in the prior art, and a splicing exposure method is adopted to produce display panels with different sizes, namely, a multi-exposure mode is adopted in the production process of the display panel, partial patterns on the mask plate are transferred to a display substrate by each exposure, and finally, the required complete patterns are spliced. However, the display panel manufactured by the splicing exposure method in the prior art has the problem of uneven splicing seams and pictures, and the display quality is influenced.

Disclosure of Invention

The application aims at the defects of the existing mode, and provides a mask plate, a film layer manufacturing method, a display substrate and a display device, which are used for solving the problems that a display panel in the prior art has splicing seams and pictures are not uniform.

In a first aspect, an embodiment of the present application provides a mask plate, including a plurality of mask patterns, where the mask patterns include a first pattern and a second pattern;

the first pattern comprises a first sub-pattern and a second sub-pattern, the first sub-pattern is positioned in a first edge area of the mask plate, the second sub-pattern is positioned in a second edge area, opposite to the first edge area, of the mask plate, and the second pattern is positioned between the first sub-pattern and the second sub-pattern;

in a first direction, a first preset distance is arranged between the first sub-graph and the second graph, a second preset distance is arranged between the second sub-graph and the second graph, and the first direction is a direction in which the first sub-graph points to the second graph;

the second graph comprises a plurality of sub-unit graphs, the sub-unit graphs are arranged along the direction that the first sub-graph points to the second graph, and in the direction that the first sub-graph points to the second graph, at least part of the sub-unit graphs in the sub-unit graphs are arranged at intervals.

Optionally, in the first direction, all the subunit patterns in the plurality of subunit patterns are arranged at intervals.

Optionally, in the first direction, the first preset distance is smaller than a distance between two adjacent subunit graphics; and/or the presence of a gas in the gas,

and in the direction that the first sub-graph points to the second graph, the second preset distance is smaller than the distance between two adjacent sub-unit graphs.

Optionally, in the plurality of subunit patterns, the distances between two adjacent subunit patterns are equal; and/or the presence of a gas in the gas,

the first preset distance is equal to the second preset distance.

Optionally, in the first direction, the width of the subunit pattern is equal to the distance between two adjacent subunit patterns that are arranged at an interval; and/or the presence of a gas in the gas,

in a second direction, the widths of the plurality of sub-unit patterns are equal, and the second direction is perpendicular to the first direction.

In a second aspect, an embodiment of the present application provides a method for manufacturing a film layer, where the film layer is formed by using a mask plate in the embodiment of the present application, and the method for manufacturing a display substrate includes:

providing a film layer to be photoetched, and exposing the film layer to be photoetched through a first sub-pattern of the mask plate;

exposing the film layer to be photoetched through a second graph of the mask plate;

exposing the film layer to be photoetched through a second sub-graph of the mask plate;

and developing and/or etching the exposed film layer to be photoetched to form the film layer.

Optionally, all of the sub-unit patterns in the plurality of sub-unit patterns are arranged at intervals, and the distance between two adjacent sub-unit patterns is equal, and exposing the film layer to be subjected to photolithography through the second pattern of the mask plate includes:

enabling the mask plate to be located at a first position, and exposing the film layer to be photoetched through a second graph of the mask plate;

and enabling the mask plate to be located at a second position, exposing the film layer to be photoetched through a second graph of the mask plate, wherein the distance between the first position and the second position is equal to the distance between two adjacent subunit graphs in the direction that the first sub graph points to the second graph.

In a third aspect, an embodiment of the present application provides a display substrate, where the display substrate includes a film layer manufactured by using the manufacturing method in the embodiment of the present application.

In a fourth aspect, embodiments of the present application provide a display device, which includes the display substrate in the embodiments of the present application.

Optionally, the display device includes a plurality of integrated chips disposed on one side of the display substrate, and in a direction in which the first sub-pattern points to the second sub-pattern, a distance between two adjacent sub-unit patterns is an integer multiple of a width of the integrated chip; alternatively, the first and second electrodes may be,

the display device comprises a plurality of GOA units arranged on one side of a display substrate, and the distance between every two adjacent sub-unit graphs is an integral multiple of the width of the GOA units in the direction that the first graph points to the second graph.

The beneficial technical effects brought by the technical scheme provided by the embodiment of the application comprise:

the mask plate in the embodiment of the application comprises a plurality of mask graphs, wherein the mask graphs comprise a first graph and a second graph, and the first graph comprises a first sub-graph and a second sub-graph which are respectively positioned at two opposite edges of the mask plate; the second graph comprises a plurality of sub-unit graphs, the sub-unit graphs are arranged along the direction that one sub-graph points to the second graph, and in the direction that the first sub-graph points to the second graph, at least part of the sub-unit graphs in the sub-unit graphs are arranged at intervals. By arranging at least part of the subunit graphs at intervals, in the process of producing the display panel in a splicing exposure mode, repeated exposure of the subunit graphs caused by exposure gray areas at the edges of the baffles when no interval exists between the subunit graphs is avoided, the problems of uneven splicing seams and uneven pictures of a plurality of subunit graphs at the splicing positions are solved, and the display quality is improved.

Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.

Drawings

The foregoing and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

FIG. 1 is a schematic structural diagram of a mask in the prior art;

FIG. 2 is a schematic diagram of an exposure process for making a display panel of conventional dimensions using a prior art mask;

FIG. 3 is a schematic diagram of an exposure process for making an unconventional size display panel using a prior art mask;

FIG. 4 is a schematic view of the exposure principle for generating display failure causes;

fig. 5 is a schematic structural diagram of a mask in the embodiment of the present application;

FIG. 6 is a schematic diagram of an exposure process for manufacturing a display panel by using a mask according to an embodiment of the present disclosure;

FIG. 7 is a schematic view illustrating a manufacturing process of a display substrate according to an embodiment of the present disclosure;

FIG. 8 is a schematic diagram of the first three exposures of another display panel manufactured by using a mask according to an embodiment of the present disclosure;

FIG. 9 is a schematic diagram of a third exposure process after manufacturing another display panel by using a mask according to an embodiment of the present disclosure;

FIG. 10 is a schematic diagram illustrating a comparison between a mask and a display device according to an embodiment of the present invention;

fig. 11 is a schematic diagram illustrating a comparison between a mask and another display device in an embodiment of the present application.

In the figure:

1-a mask plate; 10-a mask pattern; 11-a first graphic; 12-a second graphic; 111-a first sub-graphic; 112-a second sub-graphic; 120-subunit graph;

101-a first edge region; 102-a second edge region;

l1 — first preset distance; l2 — second preset distance; width W1; width W2; distance D1;

2-a display device; 20-a display substrate; 201-a film layer; 30-a baffle plate;

Detailed Description

Reference will now be made in detail to the present application, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar parts or parts having the same or similar functions throughout. In addition, if a detailed description of the known art is not necessary for illustrating the features of the present application, it is omitted. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application.

As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present. Further, "connected" or "coupled" as used herein may include wirelessly connected or wirelessly coupled. As used herein, the term "and/or" includes all or any element and all combinations of one or more of the associated listed items.

The inventors of the present application consider that, in the existing mask, a first pattern and a second pattern are generally included, the first pattern includes a first sub-pattern and a second sub-pattern, a distance is provided between the first sub-pattern and the second pattern, and a distance is also provided between the second sub-pattern and the second pattern. The second graph comprises a plurality of subunit graphs, and no interval exists among the subunit graphs; when the display panels with different sizes are produced by adopting a splicing exposure mode, the barrier shielding part molecule unit graph is required to be used for carrying out primary exposure, then the part of the molecule unit graph is exposed, the barrier is used for shielding the other part of the molecule unit graph to carry out the next exposure, and the steps are repeated so as to splice the graphs with target sizes. Because the edge of the baffle has an exposure gray area, namely the edge of the baffle is not completely shielded, the subunit pattern close to the edge of the baffle can be exposed, and therefore, in the splicing exposure process, the subunit pattern close to the edge of the baffle can be repeatedly exposed. Because the two exposure degrees are different (one time is gray area exposure when the baffle is arranged, and the other time is complete exposure), the patterns formed by gray area exposure and complete exposure at the splicing part of the patterns are inconsistent, and splicing seams and non-uniformity can be generated after the gray area exposure and the complete exposure are superposed, so that poor display is caused.

The application provides a mask plate, a manufacturing method of a display substrate and a display device, and aims to solve the technical problems in the prior art.

The following describes the technical solutions of the present application and how to solve the above technical problems with specific embodiments.

In the conventional mask 1, as shown in fig. 1, the mask generally includes a first pattern 11 and a second pattern 12, the first pattern 11 includes a first sub-pattern 111 and a second sub-pattern 112, and the second pattern 12 is composed of a plurality of sub-unit patterns 120. The first sub-pattern 111 and the second sub-pattern 112 are respectively located at an upper edge and a lower edge of the mask plate 1, and the first sub-pattern 111 and the second sub-pattern 12 are arranged at intervals and the second sub-pattern 112 and the second sub-pattern 12 are arranged at intervals in the first direction.

In the conventional manufacturing process of the conventional-sized display panel in the prior art, with reference to fig. 1 and 2, the second pattern 12 and the second sub-pattern 112 are first covered by the barrier 30, and the first sub-pattern 111 is formed at the edge of the film 201 by the first exposure. Next, the first sub-pattern 111 and the second sub-pattern 112 are masked with the mask 30, and a second pattern 12 is formed on the film layer 201 by a second exposure. Next, while keeping the shutter 30 covering the first sub-pattern 111 and the second sub-pattern 112, the relative positions of the mask 1 and the film layer 201 are moved and a third exposure is performed to form a pattern composed of two second patterns 12 on the film layer 201. Finally, the first sub-pattern 111 and the second sub-pattern 12 are covered by the mask 30, and the second sub-pattern 112 is formed on the other edge of the film layer 201 by the fourth exposure, so that the pattern on the mask 1 is transferred onto the film layer 201. For a display panel with a conventional size, the target pattern on the film layer 201 can be formed by splicing the whole second pattern 12, so that the size of the mask 1 can be reduced when the mask 1 is designed.

For the display panel with the unconventional size, the size of the pattern on the film layer 201 cannot be formed by splicing a plurality of whole second patterns 12, so that the second patterns 12 need to be covered during the splicing exposure process to be exposed so as to splice and form the required pattern on the film layer 201. Referring to fig. 1 and 3, the second pattern 12 and the second sub-pattern 112 are first covered by the barrier 30, and the first sub-pattern 111 is formed on the upper edge of the film 201 by a first exposure; next, the first sub-pattern 111 and the second sub-pattern 112 are masked by the mask 30, a second pattern 12 is formed on the film layer 201 by a second exposure, then the first sub-pattern 111, the second sub-pattern 112 and a portion of the second pattern 12 are masked by the mask 30, and a portion of the second pattern 12 is formed on the film layer 201 after the third exposure (as shown in fig. 3, the portion of the second pattern 12 is close to the lower edge of the target pattern). Finally, the first sub-pattern 111 and the second sub-pattern 12 are covered by the baffle 30, and the second sub-pattern 112 unit is formed on the lower edge of the film 201 through the fourth exposure, so that the pattern on the mask plate 1 is transferred onto the film 201.

Referring to fig. 2 and 4, at the edge of the shutter 30, the area directly below the shutter 30 is not divided into unexposed and fully exposed areas by the projection of the edge of the shutter 30, but there is an exposed gray area. In the exposure gray area, the exposure level gradually increases from left to right, and the side away from the shutter 30 outside the exposure gray area is 100% of the full exposure. In the manufacturing process of the display panel with the conventional size, because a gap exists between the first sub-pattern 111 and the second pattern 12, and a gap also exists between the second sub-pattern 112 and the second pattern 12, the edge of the baffle 30 can be positioned between the gaps of the patterns in the multiple exposure process, after the patterns are exposed and formed on the film layer 201, no repeatedly exposed patterns exist at the splicing part of the special patterns and the second pattern 12, and the problems of splicing seams and poor display are avoided.

However, in the case of manufacturing a display panel of an irregular size, in conjunction with fig. 3 and 4, during the third exposure and the fourth exposure to form the target pattern on the film 201, due to the existence of the gray exposure area at the edge of the mask 30, a part of the second pattern 12 blocked during the third exposure falls into the gray exposure area and is partially exposed (the part of the second pattern is located at the joint of the target pattern), and the pattern blocked during the third exposure is completely exposed during the fourth exposure, so that the two exposures cause a part of the second pattern to be repeatedly exposed. Due to the fact that the two exposure degrees are different, the patterns formed on the film layer 201 by the two exposures are inconsistent, the phenomenon of pattern blurring is caused after superposition, and the phenomenon of splicing seams and uneven display is macroscopically shown.

The embodiment of the application provides a mask plate 1, as shown in fig. 5, which includes a plurality of mask patterns 10, wherein the mask patterns 10 include a first pattern 11 and a second pattern 12; the first pattern 11 includes a first sub-pattern 111 and a second sub-pattern 112, the first sub-pattern 111 is located in a first edge region 101 of the mask 1, the second sub-pattern 112 is located in a second edge region 102 of the mask 1 opposite to the first edge region 101, and the second pattern 12 is located between the first sub-pattern 111 and the second sub-pattern 112. In the first direction, a first predetermined distance L1 is disposed between the first sub-pattern 111 and the second sub-pattern 12, and a second predetermined distance L2 is disposed between the second sub-pattern 112 and the second sub-pattern 12, where the first direction is a direction in which the first sub-pattern 111 points to the second sub-pattern 12.

The second graph 12 includes a plurality of sub-unit graphs 120, the sub-unit graphs 120 are arranged along a direction in which the first sub-graph 111 points to the second graph 12, and at least some sub-unit graphs 120 of the plurality of sub-unit graphs 120 are arranged at intervals in the direction in which the first sub-graph 111 points to the second graph 12.

It should be noted that the first pattern 11 includes a peculiar pattern, the first sub-pattern 111 and the second sub-pattern 112 are respectively located at the upper and lower sides of the mask 1, and the second pattern 12 includes a plurality of identical sub-unit patterns 120. According to the actual size of the target pattern, different parts in the second pattern 12 are shielded by the baffle 30 for multiple exposures to form the target pattern by splicing. With reference to fig. 5 and 6, by dividing the second pattern 12 into a plurality of sub-unit patterns 120, and disposing at least some of the sub-unit patterns 120 at intervals, during the splicing exposure, the edge of the baffle 30 can be located between two sub-unit patterns 120 disposed at intervals, so as to reduce the area of the pattern in the range of the exposure gray area, and reduce the sub-unit patterns 120 exposed repeatedly due to the exposure gray area. Therefore, the phenomena of splicing seams, poor display and the like of the patterns on the film layer 201 can be improved, and the display quality is improved.

Referring to fig. 4, it should be noted that the length of the exposure gray area in the first direction is generally 4mm, and in order to avoid the occurrence of a splice seam between the first sub-pattern 111 and the second sub-pattern 12 during the splice exposure, the first predetermined distance L1 may be greater than or equal to 4 mm. Similarly, the second predetermined distance L2 may be greater than or equal to 4 mm. The specific values of the first preset distance L1 and the second preset distance L2 can be determined according to actual conditions.

In order to enable the mask 1 to form target patterns with more sizes by means of splicing exposure and improve the compatibility of the mask 1, in the embodiment of the present application, as shown in fig. 5, in the first direction, a plurality of subunit patterns 120 in the second pattern 12 are all arranged at intervals. (support right 2) therefore, the second graph 12 is divided to the maximum extent, and the subunit graph 120 serves as the minimum constituent unit of the second graph 12. During the stitching exposure to form the target pattern, the edge of the shutter 30 may be between any two spaced apart subunit patterns 120. Therefore, the combination mode of splicing exposure is more flexible, and more target patterns with different sizes are formed.

In the splicing exposure process, in order to further reduce the area of the patterns falling within the exposure gray area, reduce the phenomena of splicing seams and poor display, the distance between the plurality of subunit patterns 120 can be increased. Preferably, as shown in fig. 5, in the embodiment of the present application, in the first direction, the first preset distance L1 is smaller than the distance D1 between two adjacent subunit patterns 120; and/or, the second preset distance L2 is smaller than the distance D1 between two adjacent sub-unit patterns 120 in the direction that the first sub-pattern 111 points to the second sub-pattern 12. Preferably, the distance between two adjacent sub-unit patterns 120 may be made greater than the maximum value among the first preset distance L1 and the second preset distance L2.

It should be noted that, in the second graph 12, the distances between the plurality of subunit graphs 120 may be equal or unequal. Preferably, in the embodiment of the present application, the distances D1 between two adjacent sub-cell patterns 120 in the plurality of sub-cell patterns 120 are equal, so that the mask 1 is easier to manufacture, and the manufacturing process is simplified. It is understood that the first preset distance L1 and the second preset distance L2 may be the same. The specific values of the first predetermined distance L1, the second predetermined distance L2, and the distance D1 between two adjacent sub-unit patterns 120 may be determined according to practical situations, and are not limited herein.

The sizes of the sub-cell patterns 120 may also be determined according to actual situations, and in the embodiment of the present application, as shown in fig. 5, in the second direction perpendicular to the first direction, the widths of the sub-cell patterns 120 are equal to W2 (support right 6), so that the mask plate 1 may be manufactured more easily, and the target patterns formed by splicing the sub-cell patterns 120 may be more regular.

As shown in fig. 5, in the embodiment of the present application, the width W1 of the sub cell pattern 120 is equal to the distance D1 between two adjacent and spaced sub cell patterns 120 in the first direction. Therefore, with reference to fig. 5 and 6, in the process of the stitching exposure, the position of the mask 1 may be shifted in the process of multiple exposures, so that the blank region (the spacing region between two adjacent sub-unit patterns 120) in the previous exposure exactly corresponds to the pattern in the subsequent exposure, and the stitching of the target patterns may be achieved by two exposures, thereby reducing the number of exposures required in stitching the target patterns.

Based on the same inventive concept, an embodiment of the present application further provides a method for manufacturing a film layer 201, where the film layer 201 is formed by using the mask plate 1 in the embodiment of the present application, and as shown in fig. 6, the method includes:

s101, providing a film layer to be photoetched, and exposing the film layer to be photoetched through a first sub-pattern of a mask plate;

s102, exposing the film layer to be photoetched through a second graph of the mask plate;

s103, exposing the film layer to be photoetched through a second sub-pattern of the mask plate;

and S104, developing and/or etching the exposed film layer to be photoetched to form a film layer.

In the manufacturing method of the film 201 provided in the embodiment of the present application, since at least some of the subunit patterns 120 in the plurality of subunit patterns 120 of the second pattern 12 are arranged at intervals, in the splicing exposure process, the edge of the baffle 30 can be located between two subunit patterns 120 arranged at intervals, so as to reduce the area of the pattern in the exposure gray area, and reduce the subunit patterns 120 repeatedly exposed due to the exposure gray area. Therefore, the phenomena of splicing seams, poor display and the like on the target graph on the film layer 201 can be improved, and the display quality is improved.

Specifically, as shown in fig. 5, in the embodiment of the present application, all the subunit patterns 120 in the plurality of subunit patterns 120 are arranged at intervals, and the distances D1 between two adjacent subunit patterns 120 are equal, in exposing the to-be-etched film layer 201 through the second pattern 12 of the mask plate 1, the method includes:

enabling the mask plate to be located at the first position, and exposing the film layer to be photoetched through a second graph of the mask plate;

and enabling the mask plate to be located at a second position, exposing the film layer to be photoetched through a second graph of the mask plate, wherein the distance between the first position and the second position is equal to the distance between two adjacent subunit graphs in the direction that the first sub-graph points to the second graph.

The specific process for manufacturing the film 201 in the first embodiment is described in detail below with reference to the drawings.

As shown in fig. 6, a layer to be etched is provided, and a photoresist layer (not shown) is formed on the layer to be etched. The first pattern 11 is formed on the photoresist layer by first exposure by shielding the second pattern 12 and the second sub-pattern 112 with the shutter 30 and locating the edge of the shutter 30 at the margin between the first sub-pattern 111 and the second pattern 12. Then, the first sub-pattern 111 and the second sub-pattern 112 are covered by the mask 30, the edge of the mask 30 is located in the blank between the first pattern 11 and the second pattern 12 and the mask 1 is placed at the first position, and a portion of the second pattern 12 is formed on the photoresist layer by the second exposure.

Then, keeping the relative position of the baffle 30 and the mask plate 1 unchanged, moving the mask plate 1 to a second position, wherein the distance between the first position and the second position is equal to the distance between two adjacent sub-unit patterns 120 in the first direction, forming another part of a second pattern 12 on the photoresist layer through third exposure, and splicing the formed patterns into a target pattern through the second exposure and the third exposure. Then, the second sub pattern 112 is transferred onto the photoresist layer by the fourth exposure with the shutter 30 covering the first sub pattern 111 and the second sub pattern 12, thereby achieving the formation of the target pattern on the photoresist layer. And finally, developing the exposed photoresist layer, etching the region of the film layer to be etched exposed after the photoresist layer is developed, and forming a target pattern on the film layer to be etched to form the film layer 201.

It should be noted that the type of the film layer to be subjected to photolithography may be determined according to actual situations, for example, the resin layer, the metal layer, or the transparent polyimide layer, and the film layer to be subjected to photolithography may be a single film layer or a composite film layer formed by stacking a plurality of film layers (for example, the metal layer plus the transparent polyimide layer). In addition, the part of the film layer to be photoetched does not need to be coated with photoresist or etched, and can be determined according to actual conditions.

When the sizes of target patterns to be formed by splicing are different, the times of exposure are different. As shown in fig. 6, the whole process of stitching exposure is completed by 4 exposures. With reference to fig. 5, 8 and 9, the size of the target pattern is large, and therefore, after the first exposure to form the first sub-pattern 111, it is necessary to form a portion of the target pattern having the repeating unit by the second, third, fourth and fifth exposures to stitch together, and finally form the second sub-pattern 112 by the sixth exposure, thereby completing the fabrication of the target size pattern. The specific number of exposures can be determined according to actual conditions.

It should be noted that the mask 1 in the embodiment of the present application may not only implement the fabrication of the display substrate 20, but also implement the fabrication of devices including a patterned film layer, such as an optoelectronic integrated substrate or other sensors, and may be determined specifically according to actual situations.

Based on the same inventive concept, the embodiment of the present application further provides a display substrate, where the display substrate includes the film layer 201 manufactured by the manufacturing method in the embodiment of the present application. Since the display substrate 20 includes the film 201 provided in the embodiment of the present application, the display substrate 20 has the same beneficial effects as the film 201, and the description thereof is omitted here.

Based on the same inventive concept, the present embodiment further provides a display device 2, and the display device 2 includes the display substrate 20 provided in the present embodiment. Since the display device 2 includes the display substrate 20 provided in the embodiment of the present application, the display device 2 has the same advantages as the display substrate 20, and the description thereof is omitted here.

In some embodiments of the present application, the display device 2 includes a plurality of integrated chips disposed on one side of the display substrate 20, and a distance between two adjacent sub-unit patterns 120 is an integral multiple of a width of the integrated chip (COF chip) in a direction (i.e., a first direction) in which the first sub-patterns 111 point to the second sub-patterns 12; alternatively, the display device 2 includes a plurality of GOA units disposed on one side of the display substrate 20, and the distance between two adjacent sub-unit patterns 120 is an integer multiple of the width of the GOA unit in the direction from the first pattern 11 to the second pattern 12.

In the display device 2, in order to save the integrated circuits related to scanning and reduce the manufacturing cost, a Gate drive on Array (GOA) configuration may be adopted. Referring to fig. 5 and 10, one side of the display device 2 is provided with a plurality of GOA units, each GOA unit controls the opening and closing of one or more rows of pixel units, and the larger the width of a GOA unit is, the more pixel units can be controlled. When designing the mask 1, the width of the sub-unit is kept consistent with the distance between two adjacent sub-unit patterns 120 in the first direction, and the distance between two adjacent sub-unit patterns 120 may be equal to the width of the GOA unit, or may be an integer multiple of the width of the GOA unit, for example, 2 times or 3 times. It can be understood that the larger the width of the sub-unit pattern 120 is, the more pixel units are included in each row of sub-units, and by making the distance between two adjacent sub-unit patterns 120 be an integral multiple of the width of the GOA unit, the GOA unit can be made to correspond to the pixel units in the sub-unit pattern 120 when the display device 2 is manufactured, thereby simplifying the manufacturing process.

In order to reduce the size of the data line driver ic, a thin Film integrated Chip (COF) is used in the display device 2. With reference to fig. 5 and 11, a plurality of COF chips are disposed on one side of the display device 2, and each COF chip drives a plurality of pixel units. When designing the mask 1, the width of the sub-unit and the distance between two adjacent sub-unit patterns 120 are kept consistent in the first direction, and the distance between two adjacent sub-unit patterns 120 may be equal to the width of the COF chip or an integer multiple of the width of the COF chip, for example, 2 times or 3 times. By setting the distance between two adjacent sub-unit patterns 120 to be an integral multiple of the width of the COF chip, the COF chip can be made to correspond to the pixel unit in the sub-unit pattern 120 when the display device 2 is manufactured, which facilitates the manufacture of the display device 2.

In the embodiment of the present application, the display device 2 includes, but is not limited to, an electronic book, a mobile phone, a tablet computer, a television, and the like, and may be determined according to actual situations.

By applying the embodiment of the application, at least the following beneficial effects can be realized:

1. the mask plate 1 in the embodiment of the application comprises a plurality of mask patterns 10, the mask patterns 10 comprise first patterns 11 and second patterns 12, and the first patterns 11 comprise first sub-patterns 111 and second sub-patterns 112 which are respectively located at two opposite edges of the mask plate 1; the second graph 12 includes a plurality of sub-unit graphs 120, the sub-unit graphs 120 are arranged along a direction in which one sub-graph points to the second graph 12, and at least some sub-unit graphs 120 of the plurality of sub-unit graphs 120 are arranged at intervals in the direction in which the first sub-graph 111 points to the second graph 12. By arranging at least part of the subunit graphs 120 at intervals, in the process of producing the display panel in a splicing exposure mode, the repeated exposure of the subunit graphs 120 caused by exposure gray areas at the edges of the baffles 30 when no interval exists between the subunit graphs 120 is avoided, the problems of uneven splicing seams and uneven pictures of a plurality of subunit graphs 120 at the splicing positions are solved, and the display quality is improved.

2. The sub-unit patterns 120 are used as the minimum constituent units of the second pattern 12 by arranging the plurality of sub-unit patterns 120 in the second pattern 12 at intervals in the first direction, whereby the second pattern 12 is divided to the maximum extent. During the stitching exposure to form the target pattern, the edge of the shutter 30 may be between any two spaced apart subunit patterns 120. Therefore, the combination mode of splicing exposure is more flexible, and more target patterns with different sizes are formed.

3. By making the width W1 of the sub-unit pattern 120 equal to the distance D1 between two adjacent and spaced sub-unit patterns 120. Therefore, in the process of the stitching exposure, the position of the mask plate 1 can be staggered in the process of multiple exposures, so that a blank area (an interval area between two adjacent subunit patterns 120) in the previous exposure just corresponds to a pattern in the next exposure, and the stitching of the target patterns can be realized through two exposures, thereby reducing the exposure times required in the stitching of the target patterns.

In the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred device or element must have a particular orientation, be constructed in a particular orientation, and be operated, and thus should not be construed as limiting the present application.

The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless otherwise specified.

In the description herein, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.

The foregoing is only a partial embodiment of the present application, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present application, and these modifications and decorations should also be regarded as the protection scope of the present application.

Claims

1. A mask plate comprises a plurality of mask patterns, and is characterized in that the mask patterns comprise a first pattern and a second pattern;

2. A mask according to claim 1, wherein all of the sub-unit patterns in the plurality of sub-unit patterns are arranged at intervals in the first direction.

3. A mask according to claim 2, wherein in the first direction, the first preset distance is smaller than the distance between two adjacent subunit patterns; and/or the presence of a gas in the gas,

4. A mask according to claim 3, wherein, in the plurality of sub-unit patterns, the distance between two adjacent sub-unit patterns is equal; and/or the presence of a gas in the gas,

the first preset distance is equal to the second preset distance.

5. A mask plate according to any one of claims 1 to 4, wherein in the first direction, the width of the subunit pattern is equal to the distance between two adjacent and spaced subunit patterns; and/or the presence of a gas in the gas,

6. A method for manufacturing a film layer formed by using the mask according to any one of claims 1 to 5, comprising:

7. The method according to claim 6, wherein all of the sub-unit patterns in the plurality of sub-unit patterns are arranged at intervals, and distances between two adjacent sub-unit patterns are equal, and exposing the film layer to be subjected to photolithography through the second pattern of the mask plate includes:

8. A display substrate, comprising a film layer manufactured by the manufacturing method of claim 6 or 7.

9. A display device, characterized in that the display device comprises the display substrate of claim 8.

10. The display device according to claim 9, wherein the display device comprises a plurality of integrated chips disposed on one side of the display substrate, and a distance between two adjacent sub-unit patterns is an integer multiple of a width of the integrated chip in a direction in which the first sub-pattern points to the second sub-pattern; alternatively, the first and second electrodes may be,