CN107219720B - Mask plate, exposure device and film patterning manufacturing method - Google Patents

Mask plate, exposure device and film patterning manufacturing method Download PDF

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Publication number
CN107219720B
CN107219720B CN201710389256.XA CN201710389256A CN107219720B CN 107219720 B CN107219720 B CN 107219720B CN 201710389256 A CN201710389256 A CN 201710389256A CN 107219720 B CN107219720 B CN 107219720B
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line width
light
mask
area
film layer
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CN107219720A (en
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谢振清
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Xiamen Tianma Microelectronics Co Ltd
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Xiamen Tianma Microelectronics Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The invention has described a mask plate, exposure device including above-mentioned mask plate and use the above-mentioned exposure device to make the method of the pattern of membranous layer; wherein, the mask plate includes: the first mask area comprises a plurality of first light-transmitting areas and a plurality of first light-shielding areas; the second mask area comprises a plurality of second light-transmitting areas and a plurality of second light-shielding areas; the actual line width of the first light-transmitting area is larger than the theoretical line width; the theoretical line width is equal to the line width of the pattern at the corresponding position of the film layer to be manufactured; the invention can solve the problem of pattern size difference at the fixed area caused by the scanning exposure mode. The method improves the problem of nonuniform line width caused by light intensity difference without introducing new manufacturing steps or increasing manufacturing cost, improves the product yield, and ensures the quality of display pictures of the display panel.

Description

Mask plate, exposure device and film patterning manufacturing method
Technical Field
The invention relates to the field of display, in particular to a mask plate, an exposure device and a manufacturing method of film patterns.
Background
Photolithography is one of the most important process steps in semiconductor manufacturing. The main function of the photolithography process is to copy the pattern on the mask onto the substrate, or to prepare for the next etching or ion implantation process. Particularly in the display field, various film layers in liquid crystal display devices and semiconductor devices, such as a metal layer, a black matrix layer, a color filter layer, a transparent conductive layer, and the like, are formed on a substrate through coating, exposure, and development processes, and etching processes. According to the requirements of various film layers, coating a photosensitive base material on a glass substrate, exposing and developing the photosensitive base material through an exposure device, forming a film layer pattern from the patterned photosensitive base material, or further etching the film layer below the photosensitive resin pattern by using the patterned photosensitive base material as a barrier to obtain the required film layer pattern.
As the display area of the display panel is increased in size, even though the scanner with the largest mask size is used, it is impossible to perform the exposure of all the patterns of the display panel at one time. The exposure device is provided with a plurality of lenses, and light emitted from a light source is projected on a photosensitive substrate to expose the photosensitive substrate. In order to make the projection areas well jointed and avoid uneven exposure illuminance, the edges of adjacent projection areas are repeatedly exposed. However, during the scanning process of the exposure device, the reaction status of the photosensitive substrate at the repeated exposure part still differs from the reaction status of the photosensitive substrate outside the repeated exposure part, which eventually causes the brightness of the display panel to be different, and causes the problem of uneven display of the product.
Disclosure of Invention
In view of the above, the present invention provides a mask for manufacturing a film pattern, wherein the mask comprises a first mask region and a second mask region;
the first mask area comprises a plurality of first light transmitting areas and a plurality of first light shading areas;
the second mask area comprises a plurality of second light transmitting areas and a plurality of second light shading areas;
wherein the actual line width of the first light-transmitting area is greater than the theoretical line width; the theoretical line width is equal to the line width of the pattern at the corresponding position of the film layer to be manufactured.
The invention also provides an exposure device, which is characterized in that the exposure device can perform scanning exposure on a material to be exposed, and comprises a light source, the mask plate and a plurality of lenses which are arranged in sequence; the lenses are configured to form adjacent projection areas with a quantitative displacement; along the direction orthogonal to the scanning direction, the adjacent end parts of the adjacent projection areas are overlapped to form an overlapping area; the first mask region of the mask plate is arranged corresponding to the overlapping region of the projection region.
The invention also provides a manufacturing method of the film layer pattern, which comprises the following steps:
forming a film layer to be patterned on a substrate;
exposing the film layer by using the exposure device;
and etching the film layer to form a film layer pattern.
Compared with the prior art, the invention can solve the problem of pattern size difference at the fixed area caused by the scanning exposure mode by improving the mask plate and the exposure device used in the photoetching process. The method improves the problem of nonuniform line width caused by light intensity difference without introducing new manufacturing steps or increasing manufacturing cost, improves the product yield, and ensures the quality of display pictures of the display panel.
Drawings
FIG. 1 is a schematic diagram of an exposure apparatus in a lens scanning process in the prior art;
FIGS. 2(a) to 2(c) are experimental data of display panels of different parameters fabricated by the prior art;
fig. 3 is a schematic plan view of a mask according to an embodiment of the present invention;
FIG. 4(a) is a schematic view of an exposure apparatus according to an embodiment of the present invention;
FIG. 4(b) is a top view of the substrate of FIG. 4 (a);
FIG. 5 is a schematic view of a cross section of FIG. 4 taken along the Y direction
Fig. 6(a) to 6(c) are schematic diagrams illustrating a method for fabricating a film pattern according to an embodiment of the invention;
fig. 7(a) to 7(c) are experimental data of the display panel manufactured by the manufacturing method of the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, the present invention is further described with reference to the accompanying drawings and examples.
It should be noted that in the following description, specific details are set forth in order to provide a thorough understanding of the present invention. The invention can be implemented in a number of ways different from those described herein and similar generalizations can be made by those skilled in the art without departing from the spirit of the invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.
The thickness, the area size and the shape of each film layer in the attached drawings of the invention do not reflect the real proportion of each film layer, and the invention is only schematically illustrated.
As shown in fig. 1, fig. 1 is a schematic view of a lens scanning process of an exposure apparatus in the prior art, in the scanning exposure process, light is projected on a photosensitive resin layer 150 coated on a substrate 140 through a lens 130 to expose the photosensitive resin layer 150, wherein a shadow portion on the photosensitive resin layer 150 is a scanned portion. The light is projected on the plane of the photosensitive resin layer 150 through each lens 130, forming a projection area 160. The photosensitive resin layer 150 falling within the projection area 160 is exposed. The lens 130 is movable in the X direction (i.e., scanning direction) relative to the substrate 140, and the projection area 160 is moved on the photosensitive resin layer 150 along with the lens 130, thereby performing scanning exposure of elements used for a large-sized display device.
Since the optical performance of the edge area of each lens 130 is different from that of the middle area of the lens 130, the intensity of light of the edge area 161 of the projection area 160 is different from that of light of the middle area 162 of the projection area 160. Therefore, the lenses are shifted in the Y direction (i.e., the direction orthogonal to the scanning direction) so that the adjacent edge regions 161 of the adjacent projection regions 160 overlap to form an overlap region 170, thereby compensating for the difference in light intensity between the edge regions 161 and the middle region 162. Seven lenses 131 to 137 will be described as an example. That is, the lens 131, the lens 133, the lens 135, and the lens 137 are arranged along the Y direction and have the same X-axis coordinate X1; lens 132, lens 134, lens 136 are aligned along the Y direction and have the same X axis coordinate X2; x1 is not equal to x 2; such that the neighbors 130 can be close to each other in the Y-direction, the edge regions 161 of adjacent projected areas 160 that are close to each other have the same Y-axis coordinate, and the edge regions 161 of adjacent projected areas 160 that are close to each other overlap during scanning. Therefore, when the lens 130 is moved in the X direction to expose the photosensitive resin layer 150 by the exposure device, the adjacent edge regions 161 sequentially sweep the same region of the photosensitive resin layer 150, and the overlapped region 170 is formed on the plane of the photosensitive resin layer 150.
However, the photosensitive resin layer 150 falling within the overlap region 170 is repeatedly exposed, but does not overlap the overlap region 170 at a time because the adjacent edge regions 161 pass through the overlap region 170 one after another. Therefore, the intensity of light in the overlapping region 170 cannot be substantially equal to the intensity of light outside the overlapping region 170 at the same time, and the reaction state of the photosensitive resin layer 150 in the overlapping region 170 is still different from the reaction state of the photosensitive resin layer 150 outside the overlapping region 170. Moreover, the edge region 161 passes through the overlapping region 170 one after another, so that there is a time difference between two exposures in the overlapping region 170, and the reaction of the photosensitive resin layer 150 in the overlapping region 170 is also greatly affected. The line width of the photosensitive resin layer 150 falling into the overlapping region 170 after being developed is different from the line width of the photosensitive resin pattern formed in the non-overlapping region after being developed, and thus the line width of the film layer formed by the photosensitive resin layer 150 or the film layer pattern which needs to be etched by the photosensitive resin layer 150 is not uniform, resulting in non-uniform brightness of the display panel and non-uniform display of the product.
An experiment was performed in which the display panel was turned to a white screen, the white screen was electrically measured, and it was found that a clear white stripe region (mura region) was present on the display panel, and the light-shielding layer (i.e., black matrix, BM) of the display panel was detected. In the test, a plurality of points of the BM corresponding to the mura area and the non-mura area are respectively selected, and the BM line width of the selected points is measured. FIG. 2 shows experimental data of display panels with different parameters manufactured by the prior art. The abscissa is the number of the selected point and the ordinate is the actual line width (unit: μm) of the BM at that point. The theoretical line width of the BM corresponding to the display panel, i.e. the line width satisfying the design requirement, should be measured to be 5.5 μm. As shown in fig. 2(a), the actual line width of BM at several points on the non-mura area is substantially maintained at 5.5 μm of the theoretical line width requirement, and the BM line widths at some measurement points fluctuate within the error allowance range; and the actual line width of BM at a plurality of points on the mura area is generally less than the theoretical line width requirement and is basically maintained to be 5.3 mu m or less and exceeds the allowable range of error.
In order to improve the display unevenness caused by the exposure variation, adjustment from process parameters, such as changing the exposure time and the exposure environment, is attempted, but finally, only the unevenness is improved, and the mura cannot be avoided. In addition, attempts have been made to adjust the color resistance of the photosensitive substrate, such as matching the color resistance with the material and thickness of the photosensitive substrate, which still cannot completely prevent mura.
With the progress of the experiment, the data of different line width designs of BM are collected, and the line width difference is found to be constant under the same color resistance and process conditions. The three experimental data exemplified in fig. 2 are experimental data in which the theoretical line widths of the designed BM are 15 μm and 22 μm, respectively, as shown in fig. 2(b) and 2 (c). When the theoretical line width of the BM corresponding to the measured display panel is 15 μm, the actual line width of the BM is basically maintained at 15 μm required by the theoretical line width within the error allowable fluctuation range at a plurality of points on the non-mura area, and the actual line width of the BM at a plurality of points on the mura area is generally less than the theoretical line width, does not exceed 14.8 μm and exceeds the error allowable range. When the theoretical line width of the BM corresponding to the measured display panel is 22 μm, the actual line width of the BM is basically maintained at 22 μm required by the theoretical line width in the error allowable fluctuation range at a plurality of points on a non-mura area, while the actual line width of the BM at a plurality of points on the mura area is generally less than the theoretical line width and does not exceed 21.8 μm, and the line width of the BM in the mura area exceeds the error allowable range.
Through experiments, the invention provides a mask plate for manufacturing film patterns. As shown in fig. 3, fig. 3 is a schematic plan view of a mask according to an embodiment of the present invention.
The mask plate 200 includes a first mask region 210 and a second mask region 220. The first mask region 210 and the second mask region 220 are arranged at intervals in the Y direction. Preferably, the mask provided by the embodiment is used for manufacturing the mesh light-shielding layer pattern.
The first mask region 210 includes a mesh-shaped first light-transmitting region 211 and a plurality of first light-blocking regions 212 surrounded by the first light-transmitting region 211; the first light-transmitting region 211 includes a plurality of first openings 231 extending in the X direction and a plurality of second openings 232 orthogonal to the first openings 231.
The second mask region 220 includes a mesh-shaped second light-transmitting region 221 and a plurality of second light-shielding regions 222 surrounded by the second light-transmitting region 221; the second light-transmitting region 211 includes a plurality of third openings 233 extending in the X direction and a plurality of fourth openings 234 orthogonal to the third openings 231.
The mask plate in the embodiment is used for manufacturing a mesh light shielding layer, and the mesh light shielding layer comprises a plurality of strip light shielding layers which extend along the X direction and the Y direction and are orthogonal to each other; the stripe-shaped light-shielding layers extending along the X direction and arranged along the Y direction have the same line width in the Y direction, and the widths are CDy, so that the theoretical line widths of the first opening 231 and the third opening 233 in the Y direction are CDy; the striped light-shielding layers extending along the Y direction and arranged along the X direction have the same line width in the X direction, and the widths of the striped light-shielding layers are CDx, that is, the theoretical line widths of the second opening 232 and the fourth opening 234 in the X direction are CDy.
Wherein the actual line width CD1 of the first opening 231 is greater than the theoretical line width CDy of the first opening 231. The actual line width CD3 of the third opening 233 is equal to the theoretical line width CDy of the third opening 233. That is to say, the opening extending along the X direction on the first mask region 210 of the mask 200 is larger than the line width of the light shielding layer pattern to be produced in the region by the actual mask 200, and the opening extending along the X direction on the second mask region 220 of the mask 200 is consistent with the line width of the light shielding layer pattern to be produced in the region by the actual mask 200.
The actual line width CD2 of the second opening 232 is greater than the theoretical line width CDx of the second opening 232. The actual line width CD4 of the fourth opening 234 is equal to the theoretical line width CDx of the fourth opening 234. That is to say, the opening extending along the Y direction on the first mask region 210 of the mask 200 is larger than the line width of the light shielding layer pattern to be produced in the region of the actual mask 200, and the opening extending along the Y direction on the second mask region 220 of the mask 200 is consistent with the line width of the light shielding layer pattern to be produced in the region of the actual mask 200.
Preferably, the actual line width CD1 of the first opening 231 is 0.1 to 0.5 μm larger than the theoretical line width CDy of the first opening 231. The actual line width CD2 of the second opening 232 is 0.1-0.5 μm larger than the theoretical line width CDx of the second opening 232. Different photosensitive substrates, i.e. color resists, have different line widths in the manufacturing process due to different photosensitivity. The actual line width of the opening on the first mask region 210 of the mask 200 is set to be 0.1-0.5 μm, which is larger than the theoretical line width of the region, so that the requirement of making the line width of the film pattern uniform is met, the display quality is improved, and even if the mask is used for manufacturing different photosensitive substrates, the difference of the line width of the photosensitive substrates in the manufacturing process is not beyond the line width range allowed by the error, so that the mask can be suitable for various photosensitive substrates.
In the embodiment, the problem of the size difference of the patterns at the fixed area caused by the scanning exposure mode can be solved by improving the mask used in the photoetching process. The problem of non-uniform line width caused by light intensity difference is solved without introducing new manufacturing steps and increasing manufacturing cost.
As shown in fig. 4, fig. 4(a) is a schematic diagram of an exposure apparatus according to an embodiment of the invention, and fig. 4(b) is a top view of the substrate in fig. 4 (a). As shown in fig. 5, fig. 5 is a schematic view of a cross section in the Y direction of fig. 4.
With reference to fig. 4 and 5, the exposure apparatus 300 includes a light source 310, the mask 200 provided in the previous embodiment, and a plurality of lenses 330, which are sequentially disposed along the Z direction. The side of the lens 330 away from the mask plate 200 is provided with a substrate 340, and the side of the substrate 340 facing the lens 330 is coated with a layer of photosensitive base material 350 to be exposed. The light source 310 passes through the first light-transmitting region 211 and the second light-transmitting region 221 on the mask 200, and is projected on the plane of the photosensitive substrate 350 through the lens 330 to form a projection region 360. The light emitted by the light source 310 is illustrated by the dashed arrow in the Z direction. Preferably, the projection area 360 is a trapezoid in this embodiment. The lens 330 can be moved relative to the substrate 340 along the X-direction (i.e., the scanning direction), and the projection area 360 moves with the lens 330 over the photosensitive substrate 350. The lenses are staggered in the Y direction (i.e., the direction orthogonal to the scanning direction) so that adjacent edge regions 361 of adjacent projection regions 360 overlap to form an overlap region 370, compensating for the difference in intensity between the edge regions 361 and the middle region 362. Other parts in the embodiment that are the same as those in the prior art are not described again.
The first mask region 210 of the mask 200 is disposed corresponding to an overlapping region (i.e., region a in fig. 5) of the projection region 360, and the first mask region 210 includes a mesh-shaped first light-transmitting region 211 and a plurality of first light-shielding regions 212 surrounded by the first light-transmitting region 211. The first light transmitting area 211 includes a plurality of first openings 231 extending in the X direction, wherein an actual line width CD1 of the first openings 231 of the first mask region 210 is greater than a theoretical line width CDy of the first openings 231. The second mask region 220 is disposed corresponding to an area outside the overlapping area of the projection region 360 (i.e., the area B in fig. 5), and the second mask region 220 includes a second light-transmitting area 221 and a plurality of second light-shielding areas 222 surrounded by the second light-transmitting area 221; the second light transmission region 211 includes a plurality of third openings 233 extending in the X direction, wherein an actual line width CD3 of the third openings 233 is equal to a theoretical line width CDy of the third openings 233. That is, the opening extending along the X direction on the first mask region 210 of the mask 200 is larger than the line width of the light shielding layer pattern to be formed in the region of the actual mask 200. Specifically, the first opening 231 of the first mask region 210 may be extended from the center to two sides by an equal distance CDadd along the direction perpendicular to the plane of the mask 200 and the direction X.
Preferably, the actual line width CD1 of the first opening 231 is 0.1 to 0.5 μm larger than the theoretical line width CDy of the first opening 231. The mask plate not only meets the requirement of enabling the line width of film layer patterns to be uniform, improves the display quality, but also can meet the requirement that even if the mask plate is used for manufacturing different photosensitive base materials, the difference generated by the line width of the photosensitive base materials in the manufacturing process does not exceed the range of the line width allowed by errors, and the mask plate can be suitable for various photosensitive base materials.
Certainly, in this embodiment, because the pixel arrangement rule of the display panel in the prior art is considered, the thin film transistors are usually arranged at the intervals between the pixels extending along the Y direction, so the intervals are usually large, the thin film transistors extend along the Y direction, the widths of the strip light shielding layers arranged along the X direction in the X direction are also far larger than the line widths of the strip light shielding layers orthogonal to the X direction, and the influence of the difference of the sizes of the patterns at the fixed region on the strip light shielding layers extending along the Y direction due to the scanning exposure mode can be ignored, so in some embodiments of the present invention, the first light transmission region corresponding to the strip light shielding layers extending along the X direction on the mask plate can be only expanded along the Y direction. In some preferred embodiments of the present invention, the first light-transmitting region of the mask may be selectively extended in different directions (not limited to the X or Y direction) according to specific needs.
The exposure device provided by the embodiment ensures the arrangement structure of the original lenses, keeps the mutual compensation exposure intensity of the lenses, does not introduce a new manufacturing step, does not increase the manufacturing cost, improves the problem of uneven line width of film patterns caused by light intensity difference in the prior art, not only improves the product yield, but also ensures the quality of display pictures of the display panel.
As shown in fig. 6, fig. 6(a) to 6(c) are schematic diagrams illustrating a method for manufacturing a film pattern according to an embodiment of the invention.
First, as shown in fig. 6(a), a film layer 410 to be patterned is formed on a substrate 400 through processes of adhesion-promoting, glue-applying, and post-baking. The film layer 410 is a photosensitive substrate, such as a photoresist material such as a photosensitive resin, and in this embodiment, taking a negative photosensitive substrate as an example, an exposed area of the negative photosensitive substrate is crosslinked, and is insoluble in a developing solution, and has good adhesion capability, good blocking effect, and high photosensitive speed.
Next, as shown in fig. 6(b), the film is exposed by using the exposure apparatus 300 according to the previous embodiment. The substrate is placed on a stage of the exposure apparatus 300, one surface of the film layer 410 to be patterned faces the light source 210 of the exposure apparatus 300, wherein light emitted by the light source 210 passes through a light-transmitting region of the mask plate 200 and is projected on the film layer 410 by the lens to form a projection region, and edge regions of adjacent projection regions overlap each other along the Y direction to form an overlapping region a. The first mask region 210 of the mask plate 200 is disposed corresponding to the overlap region a, and the pattern on the first mask region 210, i.e., the shape of the first openings 231, is identical to the pattern of the film layer 410 falling within the overlap region a. The second mask region 220 of the mask plate 200 is disposed corresponding to the non-overlapping region B, and the shape of the predetermined pattern on the second mask region 220, that is, the shape of the third opening 233, is consistent with the predetermined pattern of the film layer 410 falling in the non-overlapping region B.
Wherein the actual linewidth CD1 of the first opening 231 of the first mask region 210 is greater than the theoretical linewidth CDy of the first opening 231. The actual line width CD3 of the third opening 233 is equal to the theoretical line width CDy of the third opening 233. That is, the opening extending along the X direction on the first mask region 210 of the mask 200 is larger than the line width of the light shielding layer pattern to be formed in the region of the actual mask 200. The first openings 231 of the first mask region 210 may be extended from the center to both sides by an equal distance CDadd in the directions perpendicular to the plane of the mask plate 200 and X. The projection area moves in the vertical and Y directions as the lens moves in the plane of the film 410, completing the exposure of the film 410.
Then, as shown in fig. 6(c), the exposed film layer 410 is developed, baked, and etched to form a film layer pattern 420. By the manufacturing method of the embodiment, in the exposure process, the line widths of the film layer 410 in the overlapping area a and the non-overlapping area B all reach the theoretical line width CDy required by the design.
Preferably, the actual line width CD1 of the first opening 231 is 0.1 to 0.5 μm larger than the theoretical line width CDy of the first opening 231. The mask plate not only meets the requirement of enabling the line width of film layer patterns to be uniform, improves the display quality, but also can meet the requirement that even if the mask plate is used for manufacturing different photosensitive base materials, the difference generated by the line width of the photosensitive base materials in the manufacturing process does not exceed the range of the line width allowed by errors, and the mask plate can be suitable for various photosensitive base materials.
By the invention, the uniformity of the line width of the film pattern is obviously improved, and mura is avoided, thereby improving the display quality. For convenience of explanation, in the following description, a mesh light-shielding layer pattern having stripe light-shielding layers extending in the X direction and arranged in the Y direction and having theoretical line widths of 5.5 μm is taken as an example, the theoretical line widths CDy of the openings of the mask extending in the X direction should be 5.5 μm, that is, the theoretical line widths CD1 and CD3 of the first opening 231 and the third opening 233 in the Y direction are 5.5 μm.
The actual line width CD1 of the first opening 231 is 0.2 μm greater than the theoretical line width CDy of the first opening 231. Preferably, when the actual line width of the opening in the first mask region 210 of the mask plate 200 is increased by 0.2 μm from the theoretical line width of the region by CDadd of 0.5 × 0.2 μm, it is possible to prevent not only a difference in line width of the pattern of the patterned film layer due to repeated exposure in which the light intensity of the exposure region is not uniform or there is a time difference, but also further improve the accuracy of the pattern and prevent overexposure or pattern residue due to incomplete exposure.
As shown in FIGS. 7(a) to 7(c), the theoretical line widths of the BMs manufactured by the manufacturing method of the present invention are 0.5 μm, 15 μm and 22 μm, respectively. Compared with the experimental data of theoretical line widths of 0.5 μm, 15 μm and 22 μm of the prior art BM manufactured in fig. 6(a) to 6 (c). The theoretical line width of the BM of 0.5 μm of the display panel fluctuates within the range of 0.5 μm and the allowable error in the area where mura may occur (i.e., the area of the film layer in the overlapping area during exposure), and there is no difference from the area where mura does not occur. Similarly, the display panel having the BM with the theoretical line widths of 15 μm and 22 μm has no line width difference in the error-allowable range in the region where mura may occur.
In summary, the mask and the exposure device used in the photolithography process are improved by the invention, so that the problem of pattern size difference at the fixed region caused by the scanning exposure mode can be solved. The method improves the problem of nonuniform line width caused by light intensity difference without introducing new manufacturing steps or increasing manufacturing cost, improves the product yield, and ensures the quality of display pictures of the display panel.
Of course, the mask plate, the exposure device and the film layer pattern manufacturing method provided by the invention are not limited to be applied to the light shielding layer, and the mask plate, the exposure device and the film layer pattern manufacturing method can be designed aiming at different film layer patterns according to needs and can be widely applied to the film layer with the problem of pattern size difference at a fixed area caused by a scanning exposure mode. The invention is not limited to the display panel, and the invention can be widely applied to the field of semiconductor manufacturing or display.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.

Claims (9)

1. A mask plate for manufacturing a film layer pattern, wherein light emitted by a light source forms adjacent projection areas on a plane of the film layer pattern to be exposed, and adjacent ends of the adjacent projection areas are overlapped to form an overlapping area;
the first mask area comprises a plurality of first light transmitting areas and a plurality of first light shading areas;
the second mask area comprises a plurality of second light transmitting areas and a plurality of second light shading areas;
wherein the actual line width of the first light-transmitting area is greater than the theoretical line width; the theoretical line width is equal to the line width of the pattern at the corresponding position of the film layer to be manufactured.
2. A mask according to claim 1, wherein the actual line width of the first light-transmitting region is 0.1 to 0.5 μm larger than the theoretical line width.
3. A mask according to claim 1, wherein the actual line width of the first light-transmitting region is 0.2 μm larger than the theoretical line width.
4. An exposure device, characterized in that the exposure device can scan and expose the material to be exposed, and comprises a light source, a mask plate according to any one of claims 1 to 3 and a plurality of lenses which are arranged in sequence; the lens is configured to be arranged according to quantitative displacement, and enables light emitted by the light source to form an adjacent projection area on a plane where the film layer pattern to be exposed is located; along the direction orthogonal to the scanning direction, the adjacent end parts of the adjacent projection areas are overlapped to form an overlapping area; the first mask region of the mask plate is arranged corresponding to the overlapping region of the projection region.
5. The exposure apparatus according to claim 4, wherein the projection area has a trapezoidal shape.
6. A method for making a film pattern, comprising:
forming a film layer to be patterned on a substrate;
exposing the film layer using the exposure apparatus according to any one of claims 4 to 5;
and etching the film layer to form a film layer pattern.
7. The method for patterning a film according to claim 6, wherein exposing the film using the exposure apparatus comprises:
the first mask area is arranged corresponding to the film layer in the overlapping area, and the actual line width of the first light-transmitting area is larger than the line width of the corresponding position of the film layer in the overlapping area.
8. The method for patterning a film according to claim 7, wherein exposing the film using the exposure apparatus comprises:
the actual line width of the first light-transmitting area is 0.1-0.5 mu m larger than the line width of the corresponding position of the film layer in the overlapping area.
9. The method for patterning a film according to claim 8, wherein exposing the film using the exposure apparatus comprises:
the actual line width of the first light-transmitting area is 0.2 μm larger than the line width of the corresponding position of the film layer in the overlapping area.
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