WO2021068157A1 - Structure semi-conductrice à film mince, capteur d'image et appareil portatif - Google Patents

Structure semi-conductrice à film mince, capteur d'image et appareil portatif Download PDF

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Publication number
WO2021068157A1
WO2021068157A1 PCT/CN2019/110338 CN2019110338W WO2021068157A1 WO 2021068157 A1 WO2021068157 A1 WO 2021068157A1 CN 2019110338 W CN2019110338 W CN 2019110338W WO 2021068157 A1 WO2021068157 A1 WO 2021068157A1
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Prior art keywords
thin film
film transistor
semiconductor structure
source
capacitor
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PCT/CN2019/110338
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English (en)
Chinese (zh)
Inventor
杨孟达
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深圳市汇顶科技股份有限公司
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Priority to CN201980004081.3A priority Critical patent/CN111052730B/zh
Priority to PCT/CN2019/110338 priority patent/WO2021068157A1/fr
Priority to PCT/CN2019/123732 priority patent/WO2021068397A1/fr
Priority to CN201980004293.1A priority patent/CN111095916B/zh
Publication of WO2021068157A1 publication Critical patent/WO2021068157A1/fr

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/702—SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Definitions

  • This application relates to a semiconductor structure, and more particularly to a thin-film semiconductor structure and related image sensors and handheld devices.
  • the area required for fingerprint recognition on the screen has become higher and higher.
  • the cost of image sensors implemented with complementary metal oxide semiconductor structures is much higher than that of thin-film semiconductors.
  • the image sensor realized by the structure but the image sensor realized by the thin film semiconductor structure has many shortcomings to be overcome.
  • the operating speed of the source follower thin film transistor realized by the thin film semiconductor structure is far lower than the source follower thin film transistor realized by the complementary metal oxide semiconductor structure. .
  • One of the objectives of the present application is to disclose a thin-film semiconductor structure and related image sensors and handheld devices to solve the above-mentioned problems.
  • the thin film semiconductor structure includes: a pixel array including a plurality of pixels, wherein each of the plurality of pixels outputs a charge to represent the sensing of the corresponding pixel
  • each of the plurality of pixels includes: a photodiode for converting light into electric charge during an exposure operation; a source follower thin film transistor, and the gate of the source follower thin film transistor is coupled to the photodiode.
  • a diode One end of a diode; a current source, coupled to a source/drain of the source follower thin film transistor, when the current source is turned on, the current source supplies current to the source follower thin film transistor, when the current When the source is turned off, the current source does not supply current to the source follower thin film transistor; and a capacitor, one end of the capacitor is coupled to the source/drain of the source follower thin film transistor; wherein the source follower The thin film transistor is used to change the charge in the capacitor according to the change of the charge in the photodiode when the photodiode is in the exposure operation.
  • An embodiment of the present application discloses an image sensor including the above-mentioned thin film semiconductor structure; and a complementary metal oxide semiconductor structure including the pixel array with an amplifier coupled to the thin film semiconductor structure.
  • An embodiment of the present application discloses a handheld device for sensing a fingerprint of a specific object.
  • the handheld device includes a display panel including a display area and a fingerprint sensing area, wherein the fingerprint sensing area includes the above
  • the thin-film semiconductor structure is used to sense the fingerprint of the specific object.
  • the thin-film semiconductor structure, related image sensor and handheld device disclosed in the present application can reduce cost without affecting performance.
  • FIG. 1 is a schematic diagram of an embodiment of the image sensor of the application.
  • FIG. 2 is a schematic diagram of the first embodiment of the thin film semiconductor structure of this application.
  • FIG. 3 is an operation timing diagram of the first embodiment of the thin film semiconductor structure of this application.
  • FIG. 4 is a schematic diagram of a second embodiment of the thin film semiconductor structure of this application.
  • FIG. 5 is an operation timing diagram of the second embodiment of the thin film semiconductor structure of this application.
  • FIG. 6 is a schematic diagram of a third embodiment of the thin film semiconductor structure of this application.
  • FIG. 7 is a schematic diagram of a fourth embodiment of the thin film semiconductor structure of this application.
  • FIG. 8 is a schematic diagram of an embodiment of a handheld device of this application.
  • first and second features are in direct contact with each other; and may also include
  • additional components are formed between the above-mentioned first and second features, so that the first and second features may not be in direct contact.
  • present disclosure may reuse component symbols and/or labels in multiple embodiments. Such repeated use is based on the purpose of brevity and clarity, and does not in itself represent the relationship between the different embodiments and/or configurations discussed.
  • spatially relative terms here such as “below”, “below”, “below”, “above”, “above” and similar, may be used to facilitate the description of the drawing in the figure
  • the relationship between one component or feature relative to another component or feature is shown.
  • the original meaning of these spatially-relative vocabulary covers a variety of different orientations of the device in use or operation, in addition to the orientation shown in the figure.
  • the device may be placed in other orientations (for example, rotated 90 degrees or in other orientations), and these spatially-relative description vocabulary should be explained accordingly.
  • the source follower transistor in the pixel array realized by the traditional complementary metal oxide semiconductor structure needs to quickly read out the exposure result after the exposure operation, and the length of time is about microseconds.
  • the mobility of the thin film transistor under the thin film semiconductor structure is poor, so the speed of the thin film transistor is much slower than the transistor speed under the complementary metal oxide semiconductor structure. If the above-mentioned traditional pixel array is directly replaced with a thin film semiconductor structure without changing the circuit and operation mode, the problem of insufficient speed of the source follower thin film transistor will be encountered.
  • the thin film semiconductor structure disclosed in the present application uses thin film transistor technology to realize the pixel array.
  • the difference from the traditional pixel array is that the pixel array of the present application uses source follower thin film transistors to read out the exposure results in real time during the exposure operation. It is temporarily stored in the capacitor, and after the exposure operation is completed, the readout operation is entered before the charge in the capacitor is read out. Since the exposure operation time is long enough, on the order of milliseconds, the source follower thin film transistor has enough time to read out the exposure result and temporarily store it in the capacitor, which solves the above problem.
  • FIG. 1 is a schematic diagram of an embodiment of an image sensor 100 of this application.
  • the image sensor 100 includes a thin film semiconductor structure 101 and a complementary metal oxide semiconductor structure 103.
  • the thin-film semiconductor structure 101 includes a pixel array composed of a plurality of pixels. In FIG. 1, only the pixels P11, P21, P12, and P22 are shown. In fact, the pixel array may include, for example, a pixel array of n rows*m columns. n and m are integers greater than zero.
  • the complementary metal oxide semiconductor structure 103 includes a plurality of amplifiers, such as amplifiers 103_1, 103_22, etc., which are respectively coupled to multiple columns of pixels in the pixel array of the thin film semiconductor structure 101.
  • Each pixel in the pixel array will output a charge to represent the sensing result of the corresponding pixel.
  • the plurality of pixels in the pixel array may be one row of pixels and one row of pixels, corresponding to the entire row of pixels.
  • the plurality of charges are respectively output to a plurality of amplifiers in the complementary metal oxide semiconductor structure 103.
  • the charges of the pixel P11 and the pixel P12 are respectively output to the amplifiers 103_1 and 103_2 in the complementary metal oxide semiconductor structure 103 through the bit line BL1 and the bit line BL2, and then the charges of the pixel P21 and the pixel P22 are respectively passed through the bit lines BL1 and The bit line BL2 is output to the amplifiers 103_1 and 103_2 in the complementary metal oxide semiconductor structure 103.
  • FIG. 2 is a schematic diagram of the first embodiment of the thin film semiconductor structure 101 of this application.
  • FIG. 2 only shows the pixel P11 in the thin film semiconductor structure 101.
  • the pixel P11 in FIG. 2 includes a photodiode 102, a reset thin film transistor 104, a source follower thin film transistor 106, a current source 108, a capacitor 110, and a row selection.
  • the photodiode 102 is used to convert light into electric charges, for example, the light reflected from a fingerprint and entering the photodiode 102 is converted into electric charges.
  • One end (cathode) of the photodiode 102 is coupled to the gate of the source follower thin film transistor 106, and the other end (anode) of the photodiode 102 is coupled to the first voltage V 1.
  • the first voltage V 1 is Ground voltage, but this application is not limited to this.
  • the source of the reset thin film transistor 104 is coupled to the gate of the source follower thin film transistor 106 and the one end (cathode) of the photodiode 102, and the drain of the reset thin film transistor 104 is coupled to the second voltage V 2 , and according to The control signal R for resetting the gate of the thin film transistor 104 is selectively turned on.
  • the second voltage V 2 is greater than the first voltage V 1 .
  • the gate of the source follower thin film transistor 106 is coupled to the one end (cathode) of the photodiode 102 and the source of the reset thin film transistor 104, the drain of the source follower thin film transistor 106 is coupled to the second voltage V 2 , and the source follower The source of the thin film transistor 106 is coupled to the current source 108.
  • the current source 108 is implemented by a current source thin film transistor 108, the drain of the current source thin film transistor 108 is coupled to the source of the source follower thin film transistor 106, and the source of the current source thin film transistor 108 is coupled to the first
  • the voltage V 1 is selectively turned on according to the bias voltage B of the gate of the current source thin film transistor 108.
  • the current source thin film transistor 108 When the current source thin film transistor 108 is turned on, the current source thin film transistor 108 supplies a bias current to the source follower thin film transistor 106. Enable the source follower thin film transistor 106 to operate; when the current source thin film transistor 108 is turned off, the current source thin film transistor 108 cannot normally supply a bias current to the source follower thin film transistor 106, and the source follower thin film transistor 106 becomes unable to operate.
  • the bias voltage B is less than the second voltage V 2 and greater than the first voltage V 1 .
  • One end of the capacitor 110 is coupled to the source of the source follower thin film transistor 106, the drain of the current source thin film transistor 108, and the source of the row selection thin film transistor 112. The other end of the capacitor 110 is coupled to the first voltage V 1 .
  • the drain of the row selection thin film transistor 112 is coupled to the bit line BL1, and is selectively turned on according to the control signal S of the gate of the row selection thin film transistor 112.
  • FIG. 3 is an operation timing diagram of the image sensor 100 according to the first embodiment of the thin film semiconductor structure 101 of the present application.
  • the operation timing diagram of FIG. 3 also uses the pixel P11 of FIG. 2 as an example. 2 and 3 at the same time, during the reset operation, the reset thin film transistor 104 is turned on, the current source thin film transistor 108 is turned on, and the row selection thin film transistor 112 is not turned on.
  • the photodiode 102 and the capacitor 110 are reset, so that when the reset operation is completed, the photodiode 102 and the capacitor 110 will have a corresponding reset voltage level, that is, to clear the photodiode 102 and the capacitor 110 corresponding to the previous sensing The resulting charge.
  • the pixel P11 of FIG. 2 enters the exposure operation.
  • the reset thin film transistor 104 is not turned on, the current source thin film transistor 108 is turned on, and the row selection thin film transistor 112 is not turned on.
  • the photodiode 102 converts light into photoelectrons, that is, electric charge. For example, the light reflected from fingerprints and enters the photodiode 102 is converted into electric charge. As the electric charge enters the photodiode 102, the reset voltage level of the photodiode 102 will decrease.
  • the transistor 112 correspondingly changes the charge in the capacitor 110 according to the change of the charge in the photodiode 102 in real time, so that the capacitor 110 is continuously discharged.
  • the source follower thin film transistor 112 can amplify the change in the charge in the photodiode 102 and is reflected in the capacitor 110.
  • the exposure operation time is very long, that is, the exposure time of the photodiode 102 is very long, on the order of milliseconds. Therefore, the source follower thin film transistor 112 has enough time to change the charge in the capacitor 110, which overcomes the problem of the thin film semiconductor. The problem of poor mobility and slow speed of thin film transistors under the structure.
  • the pixel P11 of FIG. 2 enters the readout operation.
  • the reset thin film transistor 104 is not turned on, the current source thin film transistor 108 is not turned on, and the row selection thin film transistor 112 is turned on.
  • the source follower thin film transistor 112 no longer changes the charge in the capacitor 110, and the charge in the capacitor 110 will pass through the drain of the row selection thin film transistor 112.
  • the pole is output from the bit line BL1. Please refer to the circuit of the amplifier 103_1 in FIG. 2 and FIG. 1.
  • the amplifier 103_1 is a current mode sensitive amplifier, and the amplifier 103_1 includes an operational amplifier 114 and another capacitor 116.
  • the operational amplifier 114 has a positive terminal (+) and a negative terminal (-) And the output terminal V O , the positive terminal (+) is coupled to the common mode voltage V CM , and another capacitor 116 is coupled between the negative terminal (-) and the output terminal V O , so that the voltage of the bit line BL1 The level is limited to the common mode voltage V CM .
  • the voltage level in other words, the sensing result of the pixel P11 of FIG. 2 is read out to the output terminal V O. After the readout operation, the pixel P11 in FIG. 2 repeats the above reset, exposure, and readout operations to perform the next round of sensing.
  • an additional readout operation may be added between the reset operation and the exposure operation to obtain a voltage level representing the reset value at the output terminal V O. Because of the different pixel characteristics The voltage level representing the reset value may have different degrees of error. Therefore, the voltage level at the output terminal V O obtained by the readout operation after the exposure operation can be subtracted from the voltage level representing the reset value to The aforementioned error is eliminated, that is, the pixel P11 in FIG. 2 can also repeat the above-mentioned reset, readout, exposure, and readout operations.
  • FIG. 4 is a schematic diagram of a second embodiment of the thin film semiconductor structure 101 of this application. As in FIG. 2, FIG. 4 only shows the pixel P11 in the thin-film semiconductor structure 101. The difference from FIG. 2 is that the embodiment in FIG. 4 has an additional switch 212, which depends on the control signal S2 of the gate of the switch 212. Being selectively turned on, the source of the switch 212 is coupled to the source of the source follower thin film transistor 106, and the drain of the switch 212 is coupled to the source of the row selection thin film transistor 112 and the one end of the capacitor 110.
  • FIG. 5 is an operation timing diagram of the image sensor 100 according to the second embodiment of the thin film semiconductor structure 101 of this application.
  • the operation timing diagram of FIG. 5 also uses the pixel P11 of FIG. 4 as an example. Referring to FIGS. 4 and 5 at the same time, during the reset operation, the reset thin film transistor 104 is turned on, the current source thin film transistor 108 is turned on, the switch 212 is turned on, and the row selection thin film transistor 112 is not turned on.
  • the photodiode 102 and the capacitor 110 are reset, so that when the reset operation is completed, the photodiode 102 and the capacitor 110 will have a corresponding reset voltage level, that is, to clear the photodiode 102 and the capacitor 110 corresponding to the previous sensing The resulting charge.
  • the pixel P11 of FIG. 4 enters the exposure operation. At this time, the reset thin film transistor 104 is not turned on, the current source thin film transistor 108 is turned on, the switch 212 is turned on, and the row selection thin film transistor 112 is turned on. No conduction. The other operation details are the same as the pixel P11 in FIG. 2. After the exposure operation, the pixel P11 of FIG. 4 enters the readout operation. At this time, the reset thin film transistor 104 is not turned on, the switch 212 is not turned on, and the row selection thin film transistor 112 is turned on.
  • the source follower thin film transistor 112 no longer changes the charge in the capacitor 110, and the charge in the capacitor 110 is output from the bit line BL1 through the drain of the row selection thin film transistor 112.
  • the current source thin film transistor 108 can be conductive or non-conductive, and the result will not be affected.
  • the advantage of using the switch 212 is that when the row selection thin film transistor 112 is turned on, the row selection thin film transistor 112 must attract charges to form a channel. If there is no switch 212, it is inevitable that part of the charge in the capacitor 110 will be attracted by the capacitor 110. The charge in the pixel P11 should be used to reflect the sensing result, so the loss of a part of the charge will affect the accuracy of the sensing result of the pixel P11 at the output terminal V O.
  • the ON state of the switch 212 of the pixel P11 in FIG. 4 during the exposure operation and the readout operation is opposite to that of the row selection thin film transistor 112. Therefore, the pixel P11 in FIG.
  • the charge released by the switch 212 can directly migrate from the switch 212 to the row selection thin film transistor 112 to form a channel, so that the charge in the capacitor 110 will not be affected.
  • the switch 212 and the row selection thin film transistor 112 are designed to match each other as much as possible.
  • the high voltage level of the control signal S is the same as the high voltage level of the control signal S2
  • the size of the switch 212 and the row selection thin film transistor 112 are the same.
  • And/or the channel lengths of the switch 212 and the row selection thin film transistor 112 are the same, so that when the pixel P11 of FIG. 4 switches from the exposure operation to the readout operation, the charge released by the switch 212 and the row selection thin film transistor 112 need The charges forming the channel are the same.
  • the reset thin film transistor 104, the source follower thin film transistor 106, the current source thin film transistor 108, and the row selection thin film transistor 112 in the pixel P11 are all N-type thin film transistors.
  • the reset thin film transistor 104, the source follower thin film transistor 106, the current source thin film transistor 108, the switch 212, and the row selection thin film transistor 112 in the pixel P11 are all N-type thin film transistors. That is to say, in the embodiments of FIG. 2 and FIG. 4, the polarities of all the thin film transistors in the pixel P11 are the same. However, the present application is not limited thereto.
  • the thin film transistors in the pixel P11 may also be P-type thin film transistors.
  • the thin film transistor in the pixel P11 may have both an N-type thin film transistor and a P-type thin film transistor.
  • FIG. 6 is a schematic diagram of the third embodiment of the thin film semiconductor structure 101 of this application.
  • the pixel P11 in FIG. 6 replaces the reset thin film transistor 104, the source follower thin film transistor 106, the current source thin film transistor 108, and the row selection thin film transistor 112, which are all N-type thin film transistors in the pixel P11 of FIG.
  • FIG. 7 is a schematic diagram of a fourth embodiment of the thin film semiconductor structure 101 of this application.
  • the pixel P11 of FIG. 7 replaces the reset thin film transistor 104, the source follower thin film transistor 106, the current source thin film transistor 108, the switch 212, and the row selection thin film transistor 112 that are all N-type thin film transistors in the pixel P11 of FIG.
  • the reset thin film transistor 304, the source follower thin film transistor 306, the current source thin film transistor 308, the switch 412, and the row selection thin film transistor 312 are P-type thin film transistors, and in response to the change in the polarity of the thin film transistors, what is seen in the pixel P11 of FIG.
  • the configuration method has also been adjusted accordingly, but the operation method is the same as that of the pixel P11 in FIG. 4, and the details will not be repeated.
  • the image sensor 100 may further include a micro lens (not shown in the figure) disposed on the pixel array of the thin film semiconductor structure 101.
  • the image sensor 100 may further include a filter (not shown in the figure) disposed between the pixel array of the thin film semiconductor structure 101 and the microlens or on the microlens, Used to pass specific light waves with specific wavelengths.
  • FIG. 8 is a schematic diagram of an embodiment of a handheld device of this application.
  • the handheld device 600 is used to sense the fingerprint of a specific object.
  • the handheld device 600 includes a display panel 602 and a thin film semiconductor structure 101.
  • the thin film semiconductor structure 101 is disposed under the display panel 602 for sensing all Describe the fingerprint of a specific object.
  • the thin film semiconductor structure 101 and the display panel 602 can be integrated together.
  • the display panel 602 is a thin film semiconductor display panel, including a display area and a fingerprint sensing area.
  • the fingerprint sensing area is The area where the thin film semiconductor structure 101 is located.
  • the handheld device 600 can be used to perform optical under-screen/in-screen fingerprint sensing to sense the fingerprint of a specific object.
  • the handheld device 600 may be any handheld electronic device such as a smart phone, a personal digital assistant, a handheld computer system, or a tablet computer.
  • the thin film semiconductor structure 101 of the handheld device 600 can have a larger area, which is convenient for users to perform fingerprint sensing. It is measured, for example, that the area of the thin-film semiconductor structure 101 can reach 1/4 to 1/2 of the display panel 602, or even larger.

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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

L'invention concerne une structure semi-conductrice à film mince (101), un capteur d'image (100) et un dispositif portatif (600), la structure de semi-conducteur à film mince (101) comprenant un pixel (P11, P12, P21, P22), et comprend : une photodiode (102), qui est utilisée pour convertir la lumière en une charge lorsqu'une opération d'exposition est effectuée ; et un transistor à film mince à source suiveuse (106), dont une grille est couplée à une extrémité de la photodiode (102) ; une source de courant (108), qui est couplée à une source/drain du transistor à film mince à source suiveuse (106), lorsque la source de courant (108) est mise sous tension, la source de courant (108) fournit le courant au transistor à film mince à source suiveuse (106), et lorsque la source de courant (108) est coupée, la source de courant (108) ne fournit pas le courant au transistor à film mince à source suiveuse (106) ; et un condensateur (110), dont une extrémité est couplée à la source/drain du transistor à film mince à source suiveuse (106) ; le transistor à film mince à source suiveuse (106) étant utilisé pour modifier la charge dans le condensateur en fonction du changement de la charge dans la photodiode (102) lorsque la photodiode (102) est dans l'opération d'exposition.
PCT/CN2019/110338 2019-10-10 2019-10-10 Structure semi-conductrice à film mince, capteur d'image et appareil portatif WO2021068157A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201980004081.3A CN111052730B (zh) 2019-10-10 2019-10-10 薄膜半导体结构、图像传感器及手持装置
PCT/CN2019/110338 WO2021068157A1 (fr) 2019-10-10 2019-10-10 Structure semi-conductrice à film mince, capteur d'image et appareil portatif
PCT/CN2019/123732 WO2021068397A1 (fr) 2019-10-10 2019-12-06 Structure cmos, capteur d'image et appareil portatif
CN201980004293.1A CN111095916B (zh) 2019-10-10 2019-12-06 Cmos结构、图像传感器及手持装置

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PCT/CN2019/110338 WO2021068157A1 (fr) 2019-10-10 2019-10-10 Structure semi-conductrice à film mince, capteur d'image et appareil portatif

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TW202201210A (zh) * 2020-06-26 2022-01-01 瑞典商指紋卡公司 具有共模補償的光學指紋感測系統
WO2022236575A1 (fr) * 2021-05-10 2022-11-17 迪克创新科技有限公司 Capteur d'image, module de reconnaissance d'empreinte digitale et dispositif électronique

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