WO2021065356A1 - 電解コンデンサ用電極箔、電解コンデンサおよび電解コンデンサの製造方法 - Google Patents

電解コンデンサ用電極箔、電解コンデンサおよび電解コンデンサの製造方法 Download PDF

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WO2021065356A1
WO2021065356A1 PCT/JP2020/033684 JP2020033684W WO2021065356A1 WO 2021065356 A1 WO2021065356 A1 WO 2021065356A1 JP 2020033684 W JP2020033684 W JP 2020033684W WO 2021065356 A1 WO2021065356 A1 WO 2021065356A1
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dielectric layer
metal
electrolytic capacitor
thickness
electrode foil
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French (fr)
Japanese (ja)
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小川　美和
直美 栗原
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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Priority to US17/637,199 priority Critical patent/US11915885B2/en
Priority to CN202080066323.4A priority patent/CN114521279B/zh
Priority to JP2021550504A priority patent/JP7660300B2/ja
Publication of WO2021065356A1 publication Critical patent/WO2021065356A1/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/07—Dielectric layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/0029—Processes of manufacture
    • H01G9/0032—Processes of manufacture formation of the dielectric layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/055—Etched foil electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/15—Solid electrolytic capacitors
    • H01G9/151—Solid electrolytic capacitors with wound foil electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/022—Electrolytes; Absorbents
    • H01G9/035—Liquid electrolytes, e.g. impregnating materials

Definitions

  • the present invention relates to an electrode foil for an electrolytic capacitor, an electrolytic capacitor, and a method for manufacturing the electrolytic capacitor.
  • a dielectric layer containing an oxide of a valve metal is formed on the surface of fine irregularities of the base material by forming (anodizing) a base material containing a valve metal having a roughened surface. Will be done.
  • Patent Document 1 for the purpose of increasing the capacity and reducing the leakage current, an oxide of a valve metal different from the valve metal contained in the dielectric layer and an additive such as carbon are placed on the dielectric layer. It has been proposed to form another dielectric layer, including.
  • Patent Document 1 may not be able to realize a large capacity and an improvement in withstand voltage at the same time.
  • one aspect of the present invention is an anode containing the first metal, a first dielectric layer covering at least a part of the anode, and a first dielectric layer containing an oxide of the first metal, and the first dielectric. It covers at least a part of the layer and includes a second dielectric layer containing an oxide of a second metal different from the first metal, wherein the first metal is a group consisting of titanium, tantalum, niobium and aluminum.
  • the second metal contains at least one selected from the group consisting of silicon, zirconium, hafnium and tantalum, and the thickness T2 of the second dielectric layer is the first.
  • the present invention relates to an electrode foil for an electrolytic capacitor, which is smaller than the thickness T1 of the dielectric layer.
  • Another aspect of the present invention includes the electrode foil and a solid electrolyte layer that covers at least a part of the second dielectric layer of the electrode foil, and the solid electrolyte layer contains a conductive polymer. , Regarding electrolytic capacitors.
  • Yet another aspect of the present invention is to form a substrate containing a first metal to form a first dielectric layer containing an oxide of the first metal so as to cover at least a portion of the substrate.
  • an oxide of a second metal different from the first metal is contained so as to cover at least a part of the first dielectric layer, and the thickness is smaller than the thickness T1 of the first dielectric layer.
  • It comprises a second step of forming a second dielectric layer having a thickness T2 and obtaining an electrode foil, wherein the first metal comprises at least one selected from the group consisting of titanium, tantalum, niobium and aluminum.
  • the second metal relates to a method for producing an electrolytic capacitor, which comprises at least one selected from the group consisting of silicon, zirconium, hafnium and tantalum.
  • an electrolytic capacitor having a large capacity and excellent withstand voltage can be obtained.
  • FIG. 1 is a cross-sectional view schematically showing a surface portion of an electrode foil according to an embodiment of the present invention.
  • FIG. 2 is a perspective view schematically showing the configuration of a wound body included in the electrolytic capacitor according to the embodiment of the present invention.
  • FIG. 3 is a cross-sectional view schematically showing an electrolytic capacitor according to an embodiment of the present invention.
  • the electrode foil for an electrolytic capacitor covers at least a part of an anode body containing a first metal, a first dielectric layer containing an oxide of the first metal, and a first dielectric layer. It covers at least a part of the dielectric layer and includes a second dielectric layer containing an oxide of a second metal different from the first metal.
  • the first metal comprises at least one selected from the group consisting of titanium (Ti), tantalum (Ta), niobium (Nb) and aluminum (Al).
  • the second metal comprises at least one selected from the group consisting of silicon (Si), zirconium (Zr), hafnium (Hf) and tantalum (Ta).
  • the thickness T2 of the second dielectric layer is smaller than the thickness T1 of the first dielectric layer.
  • the withstand voltage resistance of the electrolytic capacitor is improved. Further, by making the thickness T2 of the second dielectric layer smaller than the thickness T1 of the first dielectric layer, a large-capacity electrolytic capacitor can be obtained at low cost regardless of the high or low dielectric constant of the second dielectric layer. can get. By making the thickness T2 of the second dielectric layer smaller than the thickness T1 of the first dielectric layer, excellent withstand voltage and high capacitance can be obtained in a well-balanced manner, and an electrolytic capacitor having a large CV value, which will be described later, can be obtained.
  • the first dielectric layer is likely to be formed by chemical formation.
  • the first metal preferably contains Al.
  • the oxide of the first metal (first dielectric layer) contains at least one selected from the group consisting of TiO 2 , Ta 2 O 5 , Nb 2 O 5 and Al 2 O 3. Forming such a thick first dielectric layer is advantageous for reducing the cost of the process.
  • the second metal comprises at least one selected from the group consisting of Si, Zr, Hf and Ta. In this case, it is easy to form a dense and uniform second dielectric layer by the atomic layer deposition (ALD) method.
  • the second metal preferably contains Si from the viewpoint of easily forming a second dielectric layer having high withstand voltage and a small thickness. From the viewpoint of increasing the capacity, the second metal preferably contains Hf.
  • the oxide of the second metal (second dielectric layer) contains at least one selected from the group consisting of SiO 2 , ZrO 2 , HfO 2 and Ta 2 O 5. When the second dielectric layer contains two or more kinds of oxides of the second metal, the oxides may be mixed or arranged in layers.
  • the thin oxide of the second metal enhances the withstand voltage of the electrolytic capacitor at low cost.
  • the oxide of the second metal preferably has a higher relative permittivity than the oxide of the first metal from the viewpoint of being advantageous in increasing the capacity of the electrolytic capacitor.
  • T1 / T2 The ratio of the thickness T1 of the first dielectric layer to the thickness T2 of the second dielectric layer: T1 / T2 is preferably more than 1 and 20 or less.
  • T1 / T2 is 20 or less, it is easy to improve the withstand voltage at low cost.
  • T1 / T2 is more preferably 1.25 or more and 10 or less, and further preferably 1.5 or more and 5 or less.
  • the total thickness of the thickness T1 of the first dielectric layer and the thickness T2 of the second dielectric layer is, for example, 7 nm or more and 500 nm or less. From the viewpoint of increasing the capacity, the total thickness of T1 and T2 is preferably small, and may be, for example, 7 nm or more and 12.5 nm or less, or 7 nm or more and 10.5 nm or less.
  • the thickness of the dielectric layer is made smaller and the withstand voltage is improved as compared with the case where the dielectric layer is composed of only the first dielectric layer. be able to.
  • the thickness T2 of the second dielectric layer is, for example, 0.5 nm or more and 250 nm or less.
  • composition of the oxide of the first metal contained in the first dielectric layer and the oxide of the second metal contained in the second dielectric layer is determined by energy dispersive X-ray spectroscopy (EDX) using the cross section of the electrode foil. ) Can be obtained by performing elemental analysis.
  • EDX energy dispersive X-ray spectroscopy
  • the thickness T1 of the first dielectric layer and the thickness T2 of the second dielectric layer can be determined by observing the cross section of the electrode foil using a scanning electron microscope (SEM) or a transmission electron microscope (TEM). Specifically, using a cross-sectional image of the electrode foil obtained by SEM or TEM, any 10 points are measured for the thickness of the first dielectric layer, and the average value of these is obtained as the thickness T1. The thickness of the second dielectric layer is also measured at arbitrary 10 points, and the average value of these is determined as the thickness T2.
  • SEM scanning electron microscope
  • TEM transmission electron microscope
  • FIG. 1 is a cross-sectional view schematically showing a surface portion of an electrode foil according to an embodiment of the present invention.
  • the electrode foil is an anode foil 10 including an anode body 110 containing a first metal and a dielectric layer 120 covering at least a part of the anode body 110.
  • the dielectric layer 120 includes a first dielectric layer 121 that covers at least a part of the anode 110 and a second dielectric layer 122 that covers at least a part of the first dielectric layer 121.
  • the first dielectric layer 121 contains an oxide of the first metal.
  • the second dielectric layer 122 contains an oxide of a second metal different from the first metal.
  • the thickness T2 of the second dielectric layer 122 is smaller than the thickness T1 of the first dielectric layer 121.
  • the anode body 110 is a metal leaf containing a first metal having a surface roughened by etching or the like, and has a core portion 111 and a porous portion 112.
  • the porous portion 112 has a large number of pits P.
  • the first dielectric layer 121 is formed up to the surface of the deepest part of the pit P by the chemical formation of the metal foil.
  • the second dielectric layer 122 is formed up to the surface of the deepest part of the pit P by the ALD method.
  • the electrolytic capacitor according to the embodiment of the present invention includes the above-mentioned electrode foil and a solid electrolyte layer that covers at least a part of the second dielectric layer of the above-mentioned electrode foil.
  • the solid electrolyte layer contains a conductive polymer ( ⁇ -conjugated polymer).
  • Conductive polymers include polypyrrole, polythiophene, polyaniline and derivatives thereof.
  • the electrolytic capacitor may further include a solvent.
  • the solvent preferably contains a glycol compound and / or a glycerin compound (hereinafter, also referred to as a glycol compound or the like).
  • the glycol compound and the like may be contained in the electrolytic solution described later.
  • the solvent contains a glycol compound or the like, the orientation or crystallinity of the ⁇ -conjugated polymer contained in the solid electrolyte layer is enhanced. This improves the conductivity of the solid electrolyte layer and lowers the equivalent series resistance (ESR) of the electrolytic capacitor. Further, the contact property between the solid electrolyte layer and the second dielectric layer is improved, and the withstand voltage characteristic is improved.
  • ESR equivalent series resistance
  • Glycol compounds include ethylene glycol, diethylene glycol, triethylene glycol, propylene glycol, polyalkylene glycol having a molecular weight of about 190 to 400, and the like.
  • the glycerin compound includes glycerin, polyglycerin and the like.
  • the degree of polymerization of polyglycerin is preferably 2 or more and 20 or less.
  • the glycol compound or the like one type may be used alone, or two or more types may be used in combination.
  • the electrolytic capacitor may further include an electrolytic solution.
  • an electrolytic capacitor having an excellent repair function of the dielectric layer can be obtained.
  • the electrolytic solution includes, for example, a solvent and an ionic substance (solute, for example, an organic salt) dissolved in the solvent.
  • the solvent may be an organic solvent or an ionic liquid.
  • a high boiling point solvent is preferable.
  • carbonate compounds such as propylene carbonate, cyclic sulfones such as sulfolane, lactones such as ⁇ -butyrolactone, amides such as N-methylacetamide, N, N-dimethylformamide, and N-methyl-2-pyrrolidone, and methyl acetate.
  • Esters such as, ethers such as 1,4-dioxane, ketones such as methylethylketone, formaldehyde and the like can be used.
  • the solvent one type may be used alone, or two or more types may be used in combination.
  • An organic salt is a salt in which at least one of an anion and a cation contains an organic substance.
  • the organic salt include trimethylamine maleate, triethylamine borodisalicylate, ethyldimethylamine phthalate, mono1,2,3,4-tetramethylimidazolinium phthalate, and mono 1,3-dimethyl-2-phthalate. Ethylimidazolinium or the like may be used.
  • the organic salt one type may be used alone, or two or more types may be used in combination.
  • the first dielectric layer is a chemical conversion film, and from the viewpoint of forming the second dielectric layer, the ratio of the thickness T1 (nm) of the first dielectric layer to the chemical conversion rate R (nm / V) for forming the chemical conversion film: It is preferable that T1 / R and the rated voltage Vw (V) of the electrolytic capacitor satisfy the relationship of (T1 / R) / Vw ⁇ 3. (T1 / R) / Vw is more preferably 2.5 or less, further preferably 2.0 or less, and particularly preferably 1.5 or less.
  • the chemical conversion rate R means the thickness (nm) of the chemical conversion film (layer of the oxide of the first metal) formed per 1 volt of the chemical conversion voltage Vf.
  • the chemical conversion rate R varies depending on the metal type of the first metal. For example, when the first metal is Al, the chemical conversion rate R is 1.4 nm / V (or higher product) or 2.0 nm / V (or lower product). An electrolytic capacitor having a rated voltage Vw of 10 V or less is defined as a product below, and an electrolytic capacitor having a rated voltage Vw exceeding 10 V is defined as a product. When the first metal is Ta, the chemical conversion rate R is 2 nm / V.
  • a first dielectric layer containing an oxide of the first metal is formed so as to cover at least a part of the base material by forming a base material containing the first metal. It contains an oxide of a second metal different from the first metal so as to cover at least a part of the first dielectric layer, and is smaller than the thickness T1 of the first dielectric layer.
  • a second step of forming a second dielectric layer having a thickness T2 and obtaining an electrode foil is included.
  • the first metal comprises at least one selected from the group consisting of Ti, Ta, Nb and Al.
  • the second metal comprises at least one selected from the group consisting of Si, Zr, Hf and Ta.
  • the above electrode foil is obtained by the first step and the second step.
  • a base material containing the first metal is formed to form a first dielectric layer containing an oxide of the first metal so as to cover at least a part of the base material.
  • a metal foil having a roughened surface is usually used as the base material.
  • the metal foil may be a first metal foil or an alloy foil containing the first metal.
  • the thickness of the metal foil is not particularly limited, but is, for example, 15 ⁇ m or more and 300 ⁇ m or less.
  • the roughening is performed by an etching process or the like. Due to the roughening, a plurality of pits are formed on the surface of the metal foil.
  • the first dielectric layer can be formed up to the surface of the deepest part of the pit by the chemical formation of the metal foil.
  • a chemical conversion voltage Vf is applied to the base material.
  • the thickness T1 of the first dielectric layer changes according to the chemical conversion voltage Vf.
  • the ratio of the chemical conversion voltage Vf to the rated voltage Vw of the electrolytic capacitor: Vf / Vw is preferably 3.0 or less, more preferably 2.5 or less, still more preferably 2. It is 0 or less, particularly preferably 1.5 or less. In this case, it is easy to adjust the thickness balance of the first dielectric layer and the second dielectric layer so that T1 / T2 is more than 1 and 20 or less, and high pressure resistance, high capacity, and cost reduction are realized in a well-balanced manner. easy.
  • the method of forming the base material is not particularly limited, and is performed by, for example, immersing the base material in a chemical conversion solution such as an ammonium adipate solution and applying a predetermined voltage Vf (anodic oxidation).
  • the pore diameter of the pits formed on the surface of the metal foil is not particularly limited, but is preferably 50 to 2000 nm because the surface area can be increased and the second dielectric layer is easily formed deep in the pits.
  • the pore diameter of the pit is, for example, the most frequent pore diameter of the pore distribution measured by a mercury porosimeter.
  • the depth of the pit is not particularly limited, and may be appropriately set according to the thickness of the metal foil. Among them, the depth of the pit (thickness D of the etching region where the pit is formed) is 1/10 of the thickness of the metal foil before etching from the viewpoint of increasing the surface area and maintaining the strength of the electrode foil. As mentioned above, it is preferably 4/10 or less.
  • the thickness D of the etching region is an average value of any 10 points in the cross-sectional image of the metal foil obtained by SEM or TEM.
  • a thickness T2 containing an oxide of a second metal different from the first metal and smaller than the thickness T1 of the first dielectric layer is formed so as to cover at least a part of the first dielectric layer.
  • the second dielectric layer to have is formed.
  • the second dielectric layer can be formed so that the ratio of the thickness T1 of the first dielectric layer to the thickness T2 of the second dielectric layer: T1 / T2 is more than 1 and 20 or less. preferable.
  • the second step it is preferable to form the second dielectric layer by the atomic layer deposition method (ALD method).
  • ALD method atomic layer deposition method
  • a second dielectric layer having a small thickness and being uniform can be formed.
  • the variation in the thickness values of the second dielectric layers measured at 10 points when determining the thickness T2 is small, and the standard deviation is, for example, 0.5 nm or less.
  • a raw material gas containing a second metal and an oxidizing agent are alternately supplied to a reaction chamber in which an object is arranged, and a layer containing an oxide of the second metal (second dielectric material) is provided on the surface of the object. It is a film forming method for forming a layer).
  • the self-limiting action works, so that the second metal is deposited on the surface of the object in atomic layer units. Therefore, the thickness of the second dielectric layer is controlled by the number of cycles in which the supply of the raw material gas ⁇ the exhaust of the raw material gas (purge) ⁇ the supply of the oxidant ⁇ the exhaust of the oxidant (purge) is set as one cycle.
  • the ALD method is a preferable method in that the thickness of the formed layer can be easily controlled. Further, the ALD method can be carried out under a temperature condition of 100 to 400 ° C., as opposed to the chemical vapor deposition method (CVD) which is carried out under a temperature condition of 400 to 900 ° C. That is, the ALD method is also preferable in that it can suppress thermal damage to the metal foil.
  • CVD chemical vapor deposition method
  • the hole diameter of the pit is, for example, about 10 nm
  • a thin film can be formed on the deep surface of the pit.
  • the pits formed on the surface of the metal foil usually have a pore diameter of 50 nm or more. Therefore, according to the ALD method, the second dielectric layer can be formed on a deep pit having a small pore diameter, that is, a deep surface of a pit having a large aspect ratio.
  • the oxidizing agent As the oxidizing agent, the oxidizing agent conventionally used in the ALD method can be used.
  • the oxidizing agent include water, oxygen, ozone and the like.
  • the oxidant may be supplied to the reaction chamber as plasma using the oxidant as a raw material.
  • the second metal is supplied to the reaction chamber by gasifying the precursor containing the second metal.
  • the precursor is an organometallic compound containing a second metal, which facilitates chemisorption of the second metal on an object.
  • various organometallic compounds conventionally used in the ALD method can be used.
  • the precursor containing Si for example, N-sec-butyl (trimethylsilyl) amine (C 7 H 19 NSi), 1,3- diethyl-1,1,3,3-tetramethyl disilazane (C 8 H 23 NSi 2 ), 2,4,6,8,10-pentamethylcyclopentasiloxane ((CH 3 SiHO) 5 ), pentamethyldisilane ((CH 3 ) 3 SiSi (CH 3 ) 2 H), tris (dimethylamino) Silane ([(CH 3 ) 2 N] 3 SiH), Tris (isopropoxy) silanol ([(H 3 C) 2 CHO] 3 SiOH), chloropentanemethyldisilane ((CH 3 ) 3 SiSi (CH 3 ) 2) Cl), dichlorosilane (SiH 2 Cl 2 ), tridimethylaminosilane (Si [N (CH 3 ) 2 ] 4 ), tetraethylsilane (S
  • precursors containing Zr include bis (methyl- ⁇ 5 cyclopentadienyl) methoxymethyl zirconium (Zr (CH 3 C 5 H 4 ) 2 CH 3 OCH 3 ) and tetrakis (dimethylamino) zirconium (IV) ( [(CH 3 ) 2 N] 4 Zr), tetrakis (ethylmethylamino) zirconium (IV) (Zr (NCH 3 C 2 H 5 ) 4 ), zirconium (IV) t-butoxide (Zr [OC (CH 3 )) 3 ] 4 ) and the like.
  • HfCl 4 hafnium tetrachloride
  • Hf [N (CH 3 ) 2 ] 4 tetrakisdimethylaminohafnium
  • Hf [N (C 2 H 5 )) ( CH 3 )] 4 tetrakisethylmethylaminohafnium
  • Hf [OC (CH 3 ) 3 ] 4 hafnium-t-butoxide
  • precursors containing Ta include tris (ethylmethylamide) (t-butylimide) tantalum (V) Ta (Nt-C 4 H 9 [N (C 2 H 5 ) CH 3 ] 3 ) and tantalum ( V) Ethoxide (Ta (OC 2 H 5 ) 5 ), Tris (diethylamide) (t-butylimide) Tantalum (V) ((CH 3 ) 3 CNTa (N (C 2 H 5 ) 2 ) 3 ), Pentakis (dimethyl) Amino) tantalum (V) (Ta (N (CH 3 ) 2 ) 5 ) and the like can be mentioned.
  • the above-mentioned method for manufacturing an electrolytic capacitor may include a third step of forming a solid electrolyte layer containing a conductive polymer so as to cover at least a part of the second dielectric layer of the electrode foil.
  • the solid electrolyte layer can be formed, for example, by chemically polymerizing and / or electrolytically polymerizing the raw material monomer on the second dielectric layer of the electrode foil. Further, the solid electrolyte layer may be formed by applying a solution in which the conductive polymer is dissolved or a dispersion liquid in which the conductive polymer is dispersed to the second dielectric layer of the electrode foil.
  • the electrode foil may be further impregnated with a solvent or an electrolytic solution.
  • FIG. 2 is a developed view for explaining the configuration of the winding body 100.
  • the cathode foil 20 is prepared in addition to the anode foil 10.
  • a metal foil can be used in the same manner as the anode foil 10.
  • the type of metal constituting the cathode foil 20 is not particularly limited, but a valve acting metal such as Al, Ta, Nb or an alloy containing a valve acting metal may be used. If necessary, the surface of the cathode foil 20 may be roughened.
  • the anode foil 10 and the cathode foil 20 are wound around the separator 30.
  • One end of the lead tab 50A or 50B is connected to the anode foil 10 and the cathode foil 20, respectively, and the winding body 100 is formed while the lead tabs 50A and 50B are involved.
  • Lead wires 60A and 60B are connected to the other ends of the lead tabs 50A and 50B, respectively.
  • the separator 30 is not particularly limited, and for example, a non-woven fabric containing cellulose, polyethylene terephthalate, vinylon, aramid fiber or the like as a main component can be used.
  • the winding stop tape 40 is arranged on the outer surface of the cathode foil 20 located on the outermost layer of the wound body 100, and the end portion of the cathode foil 20 is fixed with the winding stop tape 40.
  • the wound body 100 may be further subjected to chemical conversion treatment in order to provide a dielectric layer on the cut surface.
  • the wound body 100 is impregnated with a solution in which a conductive polymer is dissolved or a dispersion liquid in which a conductive polymer is dispersed to form a solid electrolyte layer between the anode foil 10 and the cathode foil 20.
  • the wound body 100 after the formation of the solid electrolyte layer may be further impregnated with a solvent or an electrolytic solution.
  • the impregnation method of the solution or the like include a method of immersing the winding body 100 in the solution or the like contained in the container and a method of dropping the solution or the like onto the winding body 100.
  • the impregnation may be carried out under reduced pressure, for example, in an atmosphere of 10 kPa to 100 kPa, preferably 40 kPa to 100 kPa.
  • the electrolytic capacitor 200 as shown in FIG. 3 can be obtained.
  • the winding body 100 is housed in the bottomed case 211 so that the lead wires 60A and 60B are located on the opening side of the bottomed case 211.
  • metals such as aluminum, stainless steel, copper, iron, and brass, or alloys thereof can be used.
  • the sealing member 212 formed so that the lead wires 60A and 60B penetrate is arranged above the winding body 100, and the winding body 100 is sealed in the bottomed case 211.
  • the sealing member 212 may be an insulating substance, and an elastic body is preferable. Of these, silicone rubber, fluororubber, ethylene propylene rubber, hyperon rubber, butyl rubber, isoprene rubber and the like having high heat resistance are preferable.
  • lateral drawing is performed near the opening end of the bottomed case 211, and the opening end is crimped to the sealing member 212 to be curled.
  • the sealing is completed by arranging the seat plate 213 on the curl portion. After that, the aging process may be performed while applying the rated voltage.
  • the winding type electrolytic capacitor has been described, but the scope of application of the present invention is not limited to the above, and it can be applied to other electrolytic capacitors, for example, a multilayer type electrolytic capacitor.
  • Example 1 A wound electrolytic capacitor ( ⁇ (diameter) 6.3 mm ⁇ L (length) 9.9 mm) having a rated voltage Vw of 2.0 V was produced. The specific manufacturing method of the electrolytic capacitor will be described below.
  • Al foil having a thickness of 120 ⁇ m was prepared.
  • the Al foil was subjected to a direct current etching treatment to roughen the surface.
  • An etching region having a thickness of 40 ⁇ m was formed on the surface of the Al foil, and the pore diameter of the pit was 100 to 200 nm.
  • the surface of the roughened Al foil was subjected to chemical conversion treatment to form a first dielectric layer so as to cover the surface of the fine irregularities of the Al foil.
  • the chemical conversion treatment was carried out by immersing the Al foil in an ammonium adipate solution and applying a chemical conversion voltage Vf to the Al foil.
  • the chemical conversion voltage Vf was 5.0 V, and Vf / Vw was 2.5.
  • a second dielectric layer was formed so as to cover the first dielectric layer by the ALD method (temperature: 300 ° C., precursor: tridimethylaminosilane, oxidizing agent: O3, pressure: 1Pa, 30 cycles).
  • ALD method temperature: 300 ° C., precursor: tridimethylaminosilane, oxidizing agent: O3, pressure: 1Pa, 30 cycles.
  • an anode body anode foil having a first dielectric layer and a second dielectric layer on the surface in this order was obtained.
  • the anode foil was cut into a predetermined size.
  • the second dielectric layer was a layer of SiO 2 and the first dielectric layer was a layer of Al 2 O 3.
  • the thickness T1 of the first dielectric layer and the thickness T2 of the second dielectric layer obtained by the above-mentioned method were 10 nm and 3 nm, respectively, and T1 / T2 was 3.3. Since the second dielectric layer was formed by the ALD method, the variation in the measured values of the thicknesses of the second dielectric layers at 10 points was small, and the standard deviation was 0.2 nm.
  • the first metal was Al
  • the chemical conversion rate R was 2.0 nm / V (hereinafter referred to as the product)
  • (T1 / R) / Vw was 2.5.
  • Cathode foil production An Al foil having a thickness of 50 ⁇ m was subjected to an etching treatment to roughen the surface of the Al foil to obtain a cathode foil. Then, the cathode foil was cut into a predetermined size.
  • the anode lead tab and the cathode lead tab were connected to the anode foil and the cathode foil, and the anode foil and the cathode foil were wound through the separator while involving the lead tab.
  • An anode lead wire and a cathode lead wire were connected to the end of each lead tab protruding from the wound body.
  • the produced wound body was subjected to chemical conversion treatment again to form a dielectric layer at the cut end portion of the anode foil.
  • the end of the outer surface of the wound body was fixed with a winding stopper tape.
  • a mixed solution was prepared by dissolving 3,4-ethylenedioxythiophene and polystyrene sulfonic acid as a dopant in ion-exchanged water. While stirring the obtained mixed solution, iron (III) sulfate (oxidizing agent) dissolved in ion-exchanged water was added to carry out a polymerization reaction. After the reaction, the obtained reaction solution was dialyzed to remove unreacted monomers and excess oxidizing agent, and a conductive polymer dispersion containing polyethylene dioxythiophene doped with about 5% by mass of polystyrene sulfonic acid was prepared. Obtained.
  • the capacitance of the obtained electrolytic capacitor was measured. Further, a voltage was applied while boosting the voltage at a rate of 1.0 V / sec, and the breakdown withstand voltage at which an overcurrent of 0.5 A flowed was measured.
  • the capacitance is expressed as an index (capacitance index C) with the capacitance of the electrolytic capacitor of Comparative Example 3 as 100.
  • the breakdown withstand voltage is expressed as an index (withstand voltage index V) with the breakdown withstand voltage of the electrolytic capacitor of Comparative Example 3 as 100.
  • Examples 2 to 4 and Comparative Examples 1 to 2 An electrolytic capacitor was produced and evaluated by the same method as in Example 1 except that the thickness T2 of the second dielectric layer was set to the value shown in Table 1. The thickness T2 of the second dielectric layer was controlled by changing the number of cycles of the ALD method.
  • Comparative Example 3 An electrolytic capacitor was produced and evaluated by the same method as in Example 1 except that the second dielectric layer was not formed.
  • Examples 5 to 6 An electrolytic capacitor was produced and evaluated by the same method as in Example 1 except that the thickness T1 of the first dielectric layer and the thickness T2 of the second dielectric layer were set to the values shown in Table 1, respectively.
  • the thickness T1 of the first dielectric layer was controlled by changing the chemical conversion voltage Vf.
  • the thickness T2 of the second dielectric layer was controlled by changing the number of cycles of the ALD method.
  • Table 1 shows the evaluation results of the electrolytic capacitors of Examples 1 to 6 and Comparative Examples 1 to 3.
  • Table 1 also shows the CV value.
  • the CV value is a value obtained by multiplying the capacitance by the breakdown withstand voltage, and indicates the amount of electricity that can be stored in the electrolytic capacitor.
  • the CV value is represented as an index (CV index) with the CV value of Comparative Example 3 as 100.
  • the electrolytic capacitors of Examples 1 to 6 in which the second dielectric layer was formed had improved withstand voltage as compared with the electrolytic capacitors of Comparative Example 3 in which the second dielectric layer was not formed.
  • T1 / T2 was more than 1
  • excellent withstand voltage resistance and good capacitance were obtained in a well-balanced manner, and the CV value was higher than that of the electrolytic capacitor of Comparative Example 3.
  • the withstand voltage resistance was further improved and a larger CV value was obtained.
  • the electrolytic capacitors of Examples 5 to 6 in which the total thickness of T1 and T2 is small a larger capacitance was obtained and the CV value was further increased.
  • Example 7 An electrolytic capacitor was produced and evaluated by the same method as in Example 1 except that the thickness T1 of the first dielectric layer was set to 5 nm. The thickness T1 of the first dielectric layer was controlled by changing the chemical conversion voltage Vf. EDX analysis confirmed that the second dielectric layer was a layer of SiO2.
  • Example 8 In the preparation of the electrode foil, an electrolytic capacitor was prepared and evaluated by the same method as in Example 1 except that tetrakis (dimethylamino) zirconium (IV) was used as the precursor used in the ALD method. EDX analysis confirmed that the second dielectric layer was a ZrO2 layer.
  • Example 9 In the preparation of the electrode foil, an electrolytic capacitor was prepared and evaluated by the same method as in Example 1 except that tetrakisdimethylaminohafnium was used as the precursor used in the ALD method. EDX analysis confirmed that the second dielectric layer was a layer of HfO2.
  • Example 10 In the preparation of the electrode foil, an electrolytic capacitor was prepared and evaluated by the same method as in Example 1 except that pentakis (dimethylamino) tantalum (V) was used as the precursor used in the ALD method. EDX analysis confirmed that the second dielectric layer was a Ta2O5 layer.
  • Table 2 shows the evaluation results of the electrolytic capacitors of Examples 7 to 10.
  • an electrolytic capacitor having a large capacity and excellent withstand voltage was obtained.
  • the second metal oxide was SiO2, a thin and dense second dielectric layer was formed, and the withstand voltage was further enhanced.
  • the second metal oxide was HfO2, the capacity was further increased.
  • the electrode foil according to the present invention can be used for capacitors for various purposes in order to improve capacitance and withstand voltage.

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