WO2021056777A1 - 一种 pi 基板及其制备方法 - Google Patents
一种 pi 基板及其制备方法 Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P54/00—Cutting or separating of wafers, substrates or parts of devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the present invention relates to the field of flat display technology, in particular, a PI substrate and a preparation method thereof.
- OLED Organic Light-Emitting Diode Display
- the organic light emitting diode display has self-luminescence, low driving voltage, high luminous efficiency, short response time, high definition and contrast, nearly 180° viewing angle, wide operating temperature range, and can realize flexible display and large-area full-color display
- Many other advantages make it widely used in the display field, lighting field and smart wear field, and there is a trend to replace the liquid crystal display.
- the AMOLED display panel has gradually become a new generation of mainstream display technology due to its high contrast, wide color gamut, low power consumption, and foldable characteristics.
- AMOLED display panels are generally designed for large panels.
- it needs to be "two-cut”.
- the "two-cut” process is not accurate, and the cutting stress generated by the "two-cut” process at the cutting edge may extend to the inside of the panel with the cutting stress, so the cut panel to be processed It is necessary to define a border area (Border area) corresponding to the "two cutting” processing, and at the same time, it is necessary to make an "anticrack” design in this area.
- the design of the cutting path and the anticrack at the edge of the panel to be processed makes it impossible to effectively reduce the size of the predetermined boundary area.
- One aspect of the present invention is to provide a PI substrate, which adopts a novel structural design, so that it can reduce to a certain extent the area range of the border area (Border) that it needs to define.
- a PI substrate is defined with a first area and a second area, wherein the second area includes two or more numbers and is arranged in the first area in a mutually spaced manner; it includes a large glass substrate and The PI layer is arranged thereon; wherein the PI layer is arranged only corresponding to the second region so that the PI layers arranged on the large glass substrate are arranged in a mutually spaced manner.
- the method of arranging multiple PI layers at intervals used in the present invention can also be said to be a process for patterning the original overall PI layer, so that the PI layer provided on the glass substrate is changed from the original overall arrangement form. , Change to the method of setting intervals according to the required external dimensions. Therefore, the secondary cutting process that was originally required due to the pre-set size of the subsequent panels is now due to the graphical processing of the PI layer, so that the panel sizes that originally needed to be "two-cut" to split are not the same as each other. Therefore, it can be realized by peeling directly from the glass substrate, thereby avoiding the secondary cutting process, and correspondingly, avoiding the various problems caused by the secondary cutting mentioned in the background art. .
- the PI layer is also arranged in an array on the large glass substrate.
- the separation distance between the PI layers on two adjacent second regions is in the range of 100-500 ⁇ m.
- the longitudinal separation distance between the PI layers on two adjacent second regions is in the range of 100-500 ⁇ m.
- the lateral separation distance between the PI layers on two adjacent second regions is in the range of 100-500 ⁇ m.
- the PI substrate further defines a third region, which is arranged in the first region and spaced apart from the second region, wherein the glass in the third region is larger
- the third area PI layer is correspondingly provided on the board substrate.
- the PI layer provided on the second area is used for subsequent preparation of the display panel; and the PI layer provided on the third area is used for subsequent setting of the panel test component functional layer (Test Element Group, TEG).
- the PI layer provided on the third area can also be used to provide other external functional layers associated with the display panel, which is not limited; even, the large glass substrate can also be used according to It is necessary to define the fourth area, the fifth area, etc., and various device functional layers arranged on the PI layer can be arranged on these areas.
- Another aspect of the present invention is to provide a method for preparing the PI substrate of the present invention, which includes the following steps:
- Step S1 Provide a large glass substrate, which defines a first area and a second area; wherein the second area includes two or more numbers, and is arranged in the first area in a mutually spaced manner; An integral PI layer is formed on the large glass substrate;
- Step S2 Perform a patterning process on the PI layer through a photomask, so that after exposure, development and etching of the entire PI layer, only the PI layer disposed at the second region position remains.
- the photomask includes a main body, and the main body is provided with shielding regions arranged at intervals, and the light-transmitting regions are formed between the shielding regions, and the shielding regions The area corresponds to the second area on the glass substrate.
- the spacing between the shielding regions is in the range of 100-500 ⁇ m.
- the beneficial effects of the present invention are: a PI substrate and a preparation method thereof related to the present invention, which adopt a new type of PI layer process, increase the patterning process of the PI layer, and utilize photomask exposure, development and Etching, so that the PI layer that originally corresponds to the original integrated PI layer under the subsequently formed display panel (Panel) becomes the PI layer provided under each of the display panels and the PI layer provided on the large glass substrate on the periphery of the large board.
- the layers are separated from each other. In this way, after the subsequent half-plate LLO process of the display panel module, the peeling between each display panel and the large glass substrate on which it is located can be directly carried out, thereby eliminating the need for double cutting.
- the layout space of the circuit can be made more abundant because there is no need to preset the cutting path and the corresponding anti-breaking structure, and at the same time, the size of the border area can be greatly reduced.
- the narrow frame design of the display panel is not limited.
- this increased patterning process for an overall PI layer not only has the above-mentioned benefits for the design of the border area; but also due to the mutual interaction between the PI layers arranged on the glass substrate. Separately arranged, so that the subsequent display panel formed on the PI layer at these intervals and the large glass substrate can be separated by direct peeling, therefore, there is no need to split through the subsequent "two-cut" process Because there is no need to perform the "two cutting" process, correspondingly, there is no impact on cutting accuracy. In addition, after the half-board LLO process is directly peeled off, the problem of splitting caused by cutting can also be avoided.
- FIG. 1 is a schematic structural diagram of a PI substrate provided in an embodiment of the present invention.
- Fig. 2 is an enlarged view of the circle A part shown in Fig. 1.
- an embodiment of the present invention provides a PI substrate, which defines a first area 101 and a second area 102, wherein the second area 102 includes 2 or more and is mutually formed.
- the interval is set in the first area 101.
- the PI substrate includes a large glass substrate 100 and a PI layer disposed thereon; wherein the PI layer is only set corresponding to the second region 102.
- the PI layer of the second region is defined as The first PI layer 110.
- the first PI layer 110 corresponds to the arrangement of the subsequent display panel functional layers, and then a plurality of display panels (not shown) arranged in an array are formed on the glass large plate substrate 100, and because these display panels
- the first PI layers 110 below are not in an integrated configuration as in the prior art, but are separated from each other. Therefore, a "two-cutting" process is originally required to perform the division processing between display panels of a predetermined size. It is only necessary to change to the direct peeling process, so that while avoiding the secondary cutting process, correspondingly, it also avoids the various problems caused by the secondary cutting mentioned in the above background art.
- the sizes of the second regions 102 provided in the first region 101 can be adjusted according to needs, and are not limited to the same size.
- a third area 103 can also be provided as needed, and a PI layer is also provided thereon.
- the PI on the third area The layer is defined as the second PI layer 120, which is used to form a test element group (TEG) for the display panel prepared on the second area 102 on the glass substrate.
- TAG test element group
- a fourth area or a fifth area can also be set as needed, and other areas outside the array of the second area 102 are also provided with
- the PI layer is further used to form various functional layer areas for the display panel on the second area 102, and it is not limited to only one panel test component functional layer.
- the separation distance between the first PI layers 110 on two adjacent second regions 102 is in the range of 100 ⁇ 500 ⁇ m, which includes the horizontal separation distance L1 and the longitudinal separation distance L2. Both can be specifically about 200 ⁇ m, but are not limited to.
- Another aspect of the present invention is to provide a method for preparing the PI substrate of the present invention, which includes the following steps:
- Step S1 Provide a large glass substrate 100, which defines a first area 101, a second area 102, and a third area 103, wherein the second area 102 is arranged in an array in the first area 101, and The third area 103 is arranged in the first area 101 outside the array of the second area 102; an integrally arranged PI layer is formed on the large glass substrate 100;
- Step S2 Perform a patterning process on the PI layer through a photomask, so that after exposure, development and etching, only the PI layers 110 and 120 disposed on the second region 102 and the third region 103 remain.
- the photomask involved in the use includes a main body, and the main body is provided with spaced shielding regions, and the light-transmitting regions are formed between the shielding regions, wherein the shielding regions correspond to In the second area 102 and the third area 103 on the glass substrate, the exposure light can only be incident on the first area 101 of the large glass substrate 100 during subsequent exposure.
- the present invention relates to a PI substrate and a preparation method thereof. It adopts a new type of PI layer process, increases the patterning process of the PI layer, and uses photomask exposure, development and etching to make it correspond to the subsequent display panel ( Panel), the PI layer that was originally set at the bottom of the entire display panel, becomes the PI layer set below each display panel and the PI layer set on the large glass substrate on the periphery of the large board. The PI layer is separated from each other. In this way, in the subsequent display panel module After the half-board LLO process, the peeling between each display panel and the large glass substrate on which it is located can be directly carried out, so that no secondary cutting is required.
- the layout space of the circuit can be made more abundant because there is no need to preset the cutting path and the corresponding anti-breaking structure, and at the same time, the size of the border area can be greatly reduced.
- the narrow frame design of the display panel is not limited.
- this increased patterning process for an overall PI layer not only has the above-mentioned benefits for the design of the border area; but also due to the mutual interaction between the PI layers arranged on the glass substrate. Separately arranged, so that the subsequent display panel formed on the PI layer at these intervals and the large glass substrate can be separated by direct peeling, therefore, there is no need to split through the subsequent "two-cut" process Because there is no need to perform a "two-cut” process, correspondingly, there is no impact on cutting accuracy. In addition, after the half-board LLO process is directly peeled off, the problem of splitting caused by cutting can also be avoided.
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Abstract
一种PI基板及其制备方法。其中所述PI基板定义有第一区域（101）和第二区域（102），其中所述第二区域（102）包括2个或以上数量并且成相互间隔的方式设置在所述第一区域（101）内；其包括玻璃大板基板（100）和其上设置的PI层。
Description
本申请要求于2019年09月29日提交中国专利局、申请号为201910930456.0、发明名称为“一种PI基板及其制备方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
本发明涉及平面显示技术领域，尤其是，其中的一种PI基板及其制备方法。
已知，随着显示技术的不断向前发展，新型的平面显示器也开始全面取代CRT显示器，成为市场上的主流显示设备。
平面显示器最开始被市场接受的是平面液晶显示器（ Liquid Crystal Display，LCD），其自身的轻、薄等性能，使得其很快被市场接受，并进而获得广泛的推广应用，这同时也使得其市场占有率很高。
但随着显示技术的发展，液晶显示器还是存有一定的显示性能上的缺陷，因此，业界也是不断进行新型的平面显示技术的开发，这其中就包括有机发光二极管显示器（Organic Light-Emitting
Diode, OLED）。
其中所述有机发光二极管显示器具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，以及可实现柔性显示与大面积全色显示等诸多优点，使其在显示领域、照明领域及智能穿戴等领域有着广泛地应用，并有取代液晶显示器的趋势。而其中的AMOLED显示面板因其高对比度、广色域、低功耗、可折叠等特性，逐渐成为新一代主流显示技术。
具体来讲，AMOLED显示面板一般为大板设计，在具体应用时，为了将面板（Panel）变为规格设计的形状，需要对其进行“二切”处理。但是通常而言“二切”处理由于精度不高，并且“二切”处理中的切割应力在切割边缘处产生的切割裂纹可能会随着切割应力延伸至面板内部，所以待处理的切割面板上需要定义一个对应于“二切”处理的边界区（Border区），同时还需要在该区域内做“防断裂（Anticrack）”的设计。相应的，这种待处理面板边缘的切割道与Anticrack的设计，也就使得其预定的边界区的尺寸无法得到有效缩减。
本发明的一个方面是提供一种PI基板，其采用新型的结构设计，使得其能够在一定程度上缩减其所需定义的边界区（Border）的区域范围。
本发明采用的技术方案如下：
一种PI基板，其定义有第一区域和第二区域，其中所述第二区域包括2个或以上数量并且成相互间隔的方式设置在所述第一区域内；其包括玻璃大板基板和其上设置的PI层；其中所述PI层只对应于所述第二区域设置进而使得所述玻璃大板基板上设置的PI层成相互间隔的方式排列。
本发明采用的这种间隔排列设置多个PI层的方式，也可以说是一种对原整体PI层进行图案化的工艺方式，使得在玻璃基板上设置的PI层，由原本的整体设置形式，变更为根据需要外形尺寸而间隔设置的方式。故而，原本因为后续面板预设尺寸的原因而需要进行的二次切割处理，现在由于对所述PI层的图形化处理使得原本需要进行“二切”来分割的面板尺寸之间彼此并不相接，因此，只需直接从玻璃基板上剥离即可实现，从而在避免进行二次切割处理的同时，相应的，也避免了上述背景技术中提到的因二次切割而带来的种种问题。
进一步的，在不同实施方式中，其中所述第二区域在所述第一区域内成阵列排布，相应的，所述PI层在所述玻璃大板基板上也成阵列式设置。
进一步的，在不同实施方式中，其中相邻两所述第二区域上的PI层间的间隔距离在100~500μm范围内。
进一步的，在不同实施方式中，其中相邻两所述第二区域上的PI层间的纵向间隔距离在100~500μm范围内。
进一步的，在不同实施方式中，其中相邻两所述第二区域上的PI层间的横向间隔距离在100~500μm范围内。
进一步的，在不同实施方式中，其中所述PI基板还定义有第三区域，其设置在所述第一区域内并与所述第二区域间隔设置，其中所述第三区域内的玻璃大板基板上对应设置有第三区域PI层。
进一步的，在不同实施方式中，其中所述第二区域上设置的PI层用于后续显示面板的制备；而所述第三区域上设置的PI层用于后续设置面板测试组件功能层（Test Element Group，TEG）。而在其他实施方式中，所述第三区域上设置的PI层也可以是用于设置其他与显示面板关联的外接功能层，并无限定；甚至于，所述玻璃大板基板上还可以根据需要定义第四区域、第五区域等等，这些区域上可设置各种设置于PI层上的器件功能层，同时由于其底下的PI层与所述玻璃大板基板上设置的显示面板区域的PI层相分隔，因此也能避免后续如背景技术描述的因玻璃大板基板上设置的PI层为一层整体设置而必须的“二次切割”制程。
进一步的，本发明的又一方面是提供一种本发明涉及的所述PI基板的制备方法，其包括以下步骤：
步骤S1、提供一玻璃大板基板，其定义有第一区域和第二区域；其中所述第二区域包括2个或以上数量，并且成相互间隔的方式设置在所述第一区域内；在所述玻璃大板基板上形成一层整体设置的PI层；
步骤S2、通过光罩对所述PI层进行图案化处理，使得所述整层PI层在经过曝光、显影和刻蚀后仅保留设置在所述第二区域位置上的PI层。
进一步的，在不同实施方式中，在所述步骤S2中，其中所述光罩包括本体，所述本体上设置有间隔设置的遮蔽区，这些遮蔽区之间为透光区，其中所述遮蔽区对应于所述玻璃基板上的第二区域。
进一步的，在不同实施方式中，其中所述遮蔽区之间的间隔间距在100~500μm范围内。
相对于现有技术，本发明的有益效果是：本发明涉及的一种PI基板及其制备方法，其采用新型的PI层工艺，通过增加PI层图案化处理工艺，利用光罩曝光、显影以及刻蚀，使得本来对应在后续形成的显示面板（Panel）下方原一层整体设置的PI层，变为各所述显示面板下方设置的PI层与大板外围的玻璃大板基板上设置的PI层相互间隔分离，这样，在后续显示面板模组半板LLO工艺之后，就可以直接进行各显示面板与其所在玻璃大板基板之间的剥离，从而不需要进行二切。如此，在设定的Border Spec下，因不需要预设切割道以及相应的防断裂结构而可以使电路的布局（Layout）空间更充裕，同时还可以大大缩减边界区（Border）尺寸，实现了所述显示面板的窄边框设计。
进一步的，这一增加的对一层整体PI层的图形化处理工艺不仅是可以对边界区（Border）的设计有上述好处；而且由于设置在所述玻璃大板基板上的PI层间的相互分隔设置，使得后续形成在这些间隔设置的PI层上的显示面板与所在玻璃大板基板之间可通过直接剥离的方式分离，因此，也就不需在通过后续的“二切”制程进行分割行，而由于不需要进行“二切”制程，相应的，也就不存在切割精度问题的影响。此外，在半板LLO工艺直接剥离后，也可以避免因切割导致的裂片问题。
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明的一个实施方式中提供的一种PI基板的结构示意图；以及
图2是图1中所示圆圈A部分的放大图。
以下将结合附图和实施例，对本发明涉及的一种PI基板及其制备方法的技术方案作进一步的详细描述。
请参阅图1所示，本发明涉及的一个实施方式提供了一种PI基板，其定义有第一区域101和第二区域102，其中所述第二区域102包括2个或以上数量并且成相互间隔的方式设置在所述第一区域101内。
其中所述PI基板包括一玻璃大板基板100和其上设置的PI层；其中所述PI层只对应于所述第二区域102设置，为便于描述，将所述第二区域PI层定义为第一PI层110。其中所述第一PI层110上对应于后续显示面板功能层的设置，进而在所述玻璃大板基板100上形成成阵列分布设置的多个显示面板（未图示），而由于这些显示面板下方的所述第一PI层110之间并不是如现有技术中的一体构型，而是相互间隔，因此，使得原本需要通过“二切”工艺来进行预定尺寸显示面板间的分割处理，变为直接剥离处理即可，从而在避免进行二次切割处理的同时，相应的，也避免了上述背景技术中提到的因二次切割而带来的种种问题。
进一步的，在不同实施方式中，其中所述第一区域101内设置的这些第二区域102的尺寸可以是根据需要进行调整的，并不限于均为同一尺寸。
进一步的，对于所述第二区域102形成的阵列之外的第一区域101内，还可以根据需要设置第三区域103，其上也设置PI层，为便于说明，将第三区域上的PI层定义为第二PI层120，用于形成针对玻璃基板上第二区域102上制备的显示面板的面板测试组件功能层（Test Element Group，TEG）。
相应的，所述第二区域102阵列外的第一区域101内，还可根据需要设置第四区域或是第五区域等等，这些第二区域102阵列外设置的其他区域上也均设置有PI层，进而用于形成各种针对所述第二区域102上显示面板的功能层区域，其并不限于只设置一个面板测试组件功能层。
进一步的，如图2所示，其中相邻两所述第二区域102上的第一PI层110间的间隔距离在100~500μm范围内，这其中包括横向的间隔距离L1和纵向的间隔距离L2。两者具体可以均在200μm左右，但不限于。
进一步的，本发明的又一方面是提供一种本发明涉及的所述PI基板的制备方法，其包括以下步骤：
步骤S1、提供一玻璃大板基板100，其定义有第一区域101、第二区域102和第三区域103，其中所述第二区域102成阵列方式设置在所述第一区域101内，而所述第三区域103则是设置在所述第二区域102阵列之外的第一区域101内；在所述玻璃大板基板100上形成一层整体设置的PI层；
步骤S2、通过光罩对所述PI层进行图案化处理，使其经过曝光、显影和刻蚀后仅保留设置在所述第二区域102和第三区域103上的PI层110、120。
具体来讲，在所述步骤S2中，其中涉及使用的所述光罩包括本体，所述本体上设置有间隔设置的遮蔽区，这些遮蔽区之间为透光区，其中所述遮蔽区对应于所述玻璃基板上的第二区域102和第三区域103，进而使得后续曝光时，曝光光线只能入射到所述玻璃大板基板100的第一区域101上。
本发明涉及的一种PI基板及其制备方法，其采用新型的PI层工艺，通过增加PI层图案化处理工艺，利用光罩曝光、显影以及刻蚀，使得本来对应在后续形成的显示面板（Panel）下方原一层整体设置的PI层，变为各所述显示面板下方设置的PI层与大板外围的玻璃大板基板上设置的PI层相互间隔分离，这样，在后续显示面板模组半板LLO工艺之后，就可以直接进行各显示面板与其所在玻璃大板基板之间的剥离，从而不需要进行二切。如此，在设定的Border Spec下，因不需要预设切割道以及相应的防断裂结构而可以使电路的布局（Layout）空间更充裕，同时还可以大大缩减边界区（Border）尺寸，实现了所述显示面板的窄边框设计。
进一步的，这一增加的对一层整体PI层的图形化处理工艺不仅是可以对边界区（Border）的设计有上述好处；而且由于设置在所述玻璃大板基板上的PI层间的相互分隔设置，使得后续形成在这些间隔设置的PI层上的显示面板与所在玻璃大板基板之间可通过直接剥离的方式分离，因此，也就不需在通过后续的“二切”制程进行分割行，而由于不需要进行“二切”制程，相应的，也就不存在切割精度问题的影响。此外，在半板LLO工艺直接剥离后，也可以避免因切割导致的裂片问题。
本发明的技术范围不仅仅局限于上述说明中的内容，本领域技术人员可以在不脱离本发明技术思想的前提下，对上述实施例进行多种变形和修改，而这些变形和修改均应当属于本发明的范围内。
Claims (10)
- 一种PI基板，其定义有第一区域和第二区域；其中所述第二区域包括2个或以上数量并且成相互间隔的方式设置在所述第一区域内；其包括玻璃大板基板和其上设置的PI层；其中所述PI层只对应于所述第二区域设置进而使得所述玻璃大板基板上设置的PI层成相互间隔的方式排列。
- 根据权利要求1所述的PI基板，其中所述第二区域在所述第一区域内成阵列排布，所述PI层在所述玻璃大板基板上也对应成阵列式设置。
- 根据权利要求1所述的PI基板，其中相邻两所述第二区域上的PI层间的间隔距离在100~500μm范围内。
- 根据权利要求3所述的PI基板，其中相邻两所述第二区域上的PI层间的纵向间隔距离在100~500μm范围内。
- 根据权利要求3所述的PI基板，其中相邻两所述第二区域上的PI层间的横向间隔距离在100~500μm范围内。
- 根据权利要求1所述的PI基板，其还定义有第三区域，其设置在所述第一区域内并与所述第二区域间隔设置，其中所述第三区域内的玻璃大板基板上对应设置有第三区域PI层。
- 根据权利要求6所述的PI基板，其中所述第二区域上设置的PI层用于后续显示面板的制备；而所述第三区域上设置的PI层用于后续设置面板测试组件功能层的制备。
- 一种制备根据权利要求1所述的PI基板的方法，其包括以下步骤：步骤S1、提供一玻璃大板基板，其定义有第一区域和第二区域；其中所述第二区域包括2个或以上数量，并且成相互间隔的方式设置在所述第一区域内；在所述玻璃大板基板上形成一层整体设置的PI层；以及步骤S2、通过光罩对所述PI层进行图案化处理，使得所述整层PI层在经过曝光、显影和刻蚀后仅保留设置在所述第二区域位置上的PI层。
- 根据权利要求8所述的PI基板制备方法，在所述步骤S2中，其中所述光罩包括本体，所述本体上设置有间隔设置的遮蔽区，这些遮蔽区之间为透光区，其中所述遮蔽区对应于所述玻璃基板上的第二区域。
- 根据权利要求9所述的PI基板制备方法，其中所述遮蔽区之间的间隔间距在100~500μm范围内。
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| US20170179429A1 (en) * | 2015-12-21 | 2017-06-22 | Shanghai Tianma AM-OLED Co., Ltd. | Array substrates, manufacturing methods thereof and display panels |
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