WO2021039250A1 - 表示装置 - Google Patents

表示装置 Download PDF

Info

Publication number
WO2021039250A1
WO2021039250A1 PCT/JP2020/028898 JP2020028898W WO2021039250A1 WO 2021039250 A1 WO2021039250 A1 WO 2021039250A1 JP 2020028898 W JP2020028898 W JP 2020028898W WO 2021039250 A1 WO2021039250 A1 WO 2021039250A1
Authority
WO
WIPO (PCT)
Prior art keywords
insulating layer
display device
metal layer
light emitting
emitting element
Prior art date
Application number
PCT/JP2020/028898
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
金谷　康弘
Original Assignee
株式会社ジャパンディスプレイ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社ジャパンディスプレイ filed Critical 株式会社ジャパンディスプレイ
Priority to DE112020003308.2T priority Critical patent/DE112020003308T5/de
Priority to CN202080056696.3A priority patent/CN114207850B/zh
Publication of WO2021039250A1 publication Critical patent/WO2021039250A1/ja
Priority to US17/667,552 priority patent/US12261154B2/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Definitions

  • the present invention relates to a display device, particularly a display device using a micro LED.
  • an OLED display using an OLED which is a self-luminous element has an advantage that it has a high contrast and does not require a backlight as compared with a liquid crystal display.
  • the OLED is composed of an organic compound, it is difficult to ensure high reliability of the OLED display due to deterioration of the organic compound.
  • Micro LEDs are self-luminous elements similar to OLEDs, but unlike OLEDs, they are composed of stable inorganic compounds containing gallium (Ga), indium (In), etc., so compared to OLED displays, micro LEDs are micro LEDs.
  • the display is easy to ensure high reliability. Further, the micro LED has high luminous efficiency and can realize high brightness. Therefore, the micro LED display is expected as a next-generation display having high reliability, high brightness, and high contrast.
  • the micro LED is formed on a substrate such as sapphire like a general LED, and is separated into individual micro LEDs by dicing the substrate. As described above, in the micro LED display, the diced micro LEDs are transferred and joined into the pixels of the display substrate (for example, Patent Document 1).
  • the adhesion between the metal layer to which the micro LED is bonded and the organic insulating layer below it is low, it may be peeled off at the interface between the metal layer and the organic insulating layer during the heat treatment at the time of bonding.
  • one of the problems of the present invention is to relieve the stress of the metal layer to which the light emitting layer of the display device is bonded and suppress the peeling at the interface between the metal layer and the organic insulating layer. Another issue is to improve the reliability of the display device.
  • the display device includes a substrate, an organic insulating layer on the substrate, a metal layer on the organic insulating layer, and a light emitting element on the metal layer, and the organic insulating layer is a light emitting element.
  • the metal layer covers the convex portion and includes a step portion along the side surface of the convex portion.
  • the display device includes a substrate, an organic insulating layer on the substrate, a metal layer on the organic insulating layer, and a light emitting element on the metal layer, and the organic insulating layer emits light.
  • the metal layer covers the recess and includes a step along the side surface of the recess, including a recess that overlaps the element.
  • the display device includes a substrate, an organic insulating layer on the substrate, an inorganic insulating layer on the organic insulating layer having a predetermined pattern, and a metal layer on the inorganic insulating layer.
  • ⁇ comprises A, B or C
  • ⁇ comprises any of A, B and C
  • ⁇ comprises one selected from the group consisting of A, B and C.
  • Etc. unless otherwise specified, does not exclude the case where ⁇ includes a plurality of combinations of A to C. Furthermore, these expressions do not exclude cases where ⁇ contains other elements.
  • the terms “upper” or “upper” or “lower” or “lower” will be used, but in principle, the structure is made from the substrate based on the substrate on which the structure is formed.
  • the direction toward the object is “up” or “upward”.
  • the direction from the structure to the substrate is defined as “downward” or “downward”. Therefore, in the expression of the light emitting element on the substrate, the surface of the light emitting element in the direction facing the substrate is the lower surface of the light emitting element, and the surface on the opposite side is the upper surface of the light emitting element.
  • the expression "light emitting element on the substrate” merely describes the vertical relationship between the substrate and the light emitting element, and other members may be arranged between the substrate and the light emitting element.
  • the terms “upper” or “upper” or “lower” or “lower” mean the stacking order in a structure in which a plurality of layers are laminated, even if they are not in a positional relationship of overlapping in a plan view. Good.
  • the "display device” includes a wide range of devices for displaying an image using a light emitting element, and includes not only a display panel and a display module but also other optical members (for example, a polarizing member and a backlight). , Touch panel, etc.) may also be included.
  • FIG. 1 is a schematic cross-sectional view of a display device 10 according to an embodiment of the present invention. Specifically, FIG. 1 is a cross-sectional view cut so as to include pixels of the display device 10.
  • the display device 10 includes a substrate 100, a first wiring layer 110, a second wiring layer 120, a first insulating layer 130, a second conductive layer 140, a second insulating layer 150, and a first conductive layer 160. Includes an organic insulating layer 170, a first connecting electrode 180, a metal layer 190, a light emitting element 200, a flattening layer 250, and a second connecting electrode 210.
  • a first wiring layer 110 and a second wiring layer 120 are provided on the substrate 100.
  • the first insulating layer 130, the second conductive layer 140, the second insulating layer 150, and the first conductive layer 160 are laminated in this order on the first wiring layer 110 and the second wiring layer 120.
  • the first insulating layer 130 and the second insulating layer 150 are opened, and the first conductive layer 160 is the first wiring layer through the openings of the first insulating layer 130 and the second insulating layer 150. It is electrically connected to 110.
  • the first insulating layer 130 is opened, and the second conductive layer 140 is electrically connected to the second wiring layer 120 through the opening of the first insulating layer 130.
  • an organic insulating layer 170 including an opening is provided on the second insulating layer 150 and the first conductive layer 160.
  • a first connection electrode 180 is provided at the opening of the organic insulating layer 170, and the first connection electrode 180 is electrically connected to the first conductive layer 160 through the opening of the organic insulating layer 170.
  • a metal layer 190 is provided on the first connection electrode 180, and the metal layer 190 is electrically connected to the first connection electrode 180.
  • a light emitting element 200 is provided on the metal layer 190.
  • a second connection electrode 210 is provided on the light emitting element 200. The space between the organic insulating layer 170 and the second connection electrode 210 may be filled with an organic resin as the flattening layer 250.
  • the substrate 100 can support each layer on the substrate 100.
  • a flexible resin substrate such as a polyimide substrate, an acrylic substrate, a siloxane substrate, or a fluororesin substrate can be used. Impurities may be introduced into the flexible resin substrate in order to improve the heat resistance of the substrate 100.
  • impurities that reduce the transparency of the substrate 100 may be introduced.
  • a rigid substrate having translucency such as a glass substrate, a quartz substrate, or a sapphire substrate can be used as the substrate 100.
  • a silicon substrate, a silicon carbide substrate, a semiconductor substrate such as a compound semiconductor substrate, a conductive substrate such as a stainless steel substrate, or the like can be used as the substrate 100. .. Further, as the substrate 100, a substrate having an inorganic insulating film such as a silicon oxide film or a silicon nitride film formed on the surface thereof can also be used.
  • a metal material can be used for each of the first wiring layer 110, the second wiring layer 120, the first conductive layer 160, the second conductive layer 140, and the first connection electrode 180.
  • the metal materials include, for example, copper (Cu), aluminum (Al), titanium (Ti), chromium (Cr), cobalt (Co), nickel (Ni), molybdenum (Mo), hafnium (Hf), and tantalum (Ta). , Tungsten (W), Bismus (Bi), and alloys or compounds thereof, but not limited to these.
  • the first wiring layer 110, the second wiring layer 120, the first conductive layer 160, the second conductive layer 140, or the first connection electrode 180 may have a structure in which the above metal materials are laminated.
  • An insulating material can be used for each of the first insulating layer 130 and the second insulating layer 150.
  • Insulating material for example, silicon oxide (SiO x), silicon oxynitride (SiO x N y), silicon nitride (SiN x), silicon nitride oxide (SiN x O y), aluminum oxide (AlO x), oxynitride Inorganic insulating materials such as, but not limited to, aluminum (AlO x N y ), aluminum nitride (AlN x O y ), or aluminum nitride (AlN x).
  • SiO x N y and AlO x N y are silicon compounds and aluminum compounds containing nitrogen (N) in an amount smaller than oxygen (O).
  • SiN x Oy and AlN x Oy are silicon compounds and aluminum compounds containing oxygen in an amount smaller than that of nitrogen.
  • the organic insulating material is, for example, a resin such as a polyimide resin, an acrylic resin, an epoxy resin, a silicone resin, a fluororesin, or a siloxane resin, but is not limited thereto.
  • Each of the first insulating layer 130 and the second insulating layer 150 may have a structure in which an inorganic insulating material or an organic insulating material is used alone, or a structure in which an inorganic insulating material or an organic insulating material is laminated. You may.
  • the organic insulating layer 170 can flatten the step of the layer below the organic insulating layer 170.
  • a photosensitive organic material such as a photosensitive acrylic resin or a photosensitive polyimide resin can be used.
  • the material of the organic insulating layer 170 may be the inorganic insulating material used in the first insulating layer 130 and the second insulating layer 150.
  • the organic insulating layer 170 may have a laminated structure.
  • the organic insulating layer 170 may have a laminated structure of a photosensitive organic material and an inorganic insulating material, or may have a laminated structure of an organic insulating material and an inorganic insulating material.
  • a convex portion 171 is provided on the upper surface of the organic insulating layer 170.
  • the height of the convex portion 171 (the distance from the upper surface of the portion of the organic insulating layer 170 where the convex portion 171 is not provided (hereinafter, simply referred to as the upper surface of the organic insulating layer 170) to the upper surface of the convex portion 171) is, for example. , 0.2 ⁇ m or more and 10.0 ⁇ m or less.
  • the height of the organic insulating layer 170 is preferably a height of 1/2 or more of the thickness of the metal layer 190, more preferably a height larger than the thickness of the metal layer 190.
  • the side surface of the convex portion 171 may have a taper. That is, the side surface of the convex portion 171 does not have to be perpendicular to the upper surface of the organic insulating layer 170.
  • the angle formed by the upper surface of the organic insulating layer 170 and the side surface of the convex portion 171 is, for example, 20 degrees or more and 90 degrees or less, preferably 30 degrees or more and 80 degrees or less, and more preferably 40 degrees or more and 70 degrees or less.
  • the shape of the convex portion 171 can be circular, elliptical, or polygonal.
  • the shape of the convex portion 171 is preferably matched to the shape of the light emitting element 200. For example, if the shape of the light emitting element 200 is rectangular, the shape of the convex portion 171 is also preferably rectangular.
  • the metal layer 190 can reflect the light emitted from the light emitting element 200. Further, the metal layer 190 has conductivity because it electrically connects the electrode of the light emitting element 200 and the first connection electrode 180.
  • the material of the metal layer 190 for example, it is preferable to use a metal material having a high reflectance such as aluminum (Al), silver (Ag), or platinum (Pt).
  • the metal materials used in the first wiring layer 110, the second wiring layer 120, the first conductive layer 160, the second conductive layer 140, and the first connection electrode 180 can also be used.
  • the metal layer 190 is provided so as to cover the convex portion 171 of the organic insulating layer 170. That is, the metal layer 190 is provided so as to overlap the upper surface and the side surface of the convex portion 171.
  • the thickness of the metal layer 190 is, for example, 0.2 ⁇ m or more and 3 ⁇ m or less, preferably 0.5 nm or more and 2 ⁇ m or less, and more preferably 0.5 ⁇ m or more and 0.75 ⁇ m or less. If the thickness of the metal layer 190 is small, not only the resistance of the metal layer 190 becomes high, but also it becomes difficult to relieve the stress of the metal layer 190. Further, if the thickness of the metal layer 190 is large, it takes time to form and process the metal layer 190, so that the manufacturing tact of the display device 10 becomes long. Therefore, the thickness of the metal layer 190 is preferably in the above range.
  • the light emitting element 200 is, for example, a light emitting diode (LED) or a laser diode (LD).
  • the light emitting diode includes a mini LED or a micro LED.
  • the light emitting element 200 is provided in each pixel of the display device 10, and each pixel is provided with any one of a red light emitting element, a green light emitting element, and a red light emitting element.
  • the display device 10 can perform full-color display. Further, the display device 10 can perform full-color display by using the light emitting element 200 of each pixel as a white light emitting element and extracting red light emission, green light emission, and blue light emission from the white light emission of the white light emitting element via a color filter. Become.
  • the light emitting element 200 of each pixel is used as an ultraviolet light emitting element, and the ultraviolet light emission of the ultraviolet light emitting element is converted via the red phosphor, the green phosphor, and the blue phosphor, and the red light emission, the green light emission, and the blue light emission are taken out.
  • the display device 10 is capable of full-color display.
  • the plurality of light emitting elements 200 may be arranged in a matrix shape, or may be arranged in a staggered shape or a striped shape.
  • the structure of the light emitting element 200 is not limited to the vertical electrode structure in which the electrodes are arranged in the vertical direction. As the structure of the light emitting element 200, a horizontal electrode structure in which electrodes are arranged in the horizontal direction is also possible.
  • the light emitting element 200 shown in FIG. 1 has a vertical electrode structure, one of the electrodes of the light emitting element 200 is electrically connected to the metal layer 190, and the other of the electrodes of the light emitting element 200 is electrically connected to the second connection electrode 210. It is connected.
  • the light emitting element 200 is provided on the metal layer 190, and the metal layer 190 and the light emitting element 200 are made of a solder such as tin (Sn) or an alloy containing tin, a silver (Ag) paste, or a conductive material such as ACF. It is joined and electrically connected.
  • solder such as tin (Sn) or an alloy containing tin, a silver (Ag) paste, or a conductive material such as ACF.
  • the second connection electrode 210 can transmit the light emitted from the light emitting element 200. Further, the second connection electrode 210 preferably has high conductivity. As the material of the second connection electrode 210, for example, a transparent conductive oxide such as indium tin oxide (ITO) or indium zinc oxide (IZO) can be used.
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • FIGS. 2A and 2B are a schematic partial enlarged view and a schematic plan view of the display device 10 according to the embodiment of the present invention.
  • FIG. 2A is an enlarged cross-sectional view of the region 11 surrounded by the broken line shown in FIG.
  • FIG. 2B is a plan view corresponding to the region 11 of FIG. 2A.
  • the second connection electrode 210 on the light emitting element 200 is omitted for convenience.
  • the metal layer 190 provided on the convex portion 171 covers not only the upper surface of the convex portion 171 but also the side surface of the convex portion 171. That is, since the metal layer 190 is provided along the side surface of the convex portion 171, the metal layer 190 includes a step 191.
  • the step 191 of the metal layer 190 is provided so as to surround the light emitting element 200.
  • the metal layer 190 and the light emitting element 200 are joined by a material such as solder, silver paste, or ACF, and heat treatment is performed at the time of joining.
  • a material such as solder, silver paste, or ACF
  • heat treatment is performed at the time of joining.
  • the material of the organic insulating layer 170 and the material of the metal layer 190 have different coefficients of thermal expansion, the stress generated in the expansion or contraction due to the heat treatment differs between the organic insulating layer 170 and the metal layer 190. Therefore, when the difference in stress between the organic insulating layer 170 and the metal layer 190 is large, peeling occurs at the interface between the organic insulating layer 170 and the metal layer 190.
  • the metal layer 190 includes a step 191.
  • the stress of the metal layer 190 includes not only the horizontal component but also the vertical component, and the stress of the metal layer 190 is dispersed.
  • the stress of the metal layer 190 is relaxed by including the step 191 in the metal layer 190. Since the stress of the metal layer 190 is relaxed not only by the heat treatment at the time of joining the light emitting element 200 but also by the thermal change in the usage environment of the display device 10, the reliability of the display device 10 is improved.
  • the metal layer 190 includes the step 191 due to the convex portion 171 provided on the organic insulating layer 170. Therefore, in the heat treatment in the bonding of the light emitting element 200, the stress of the metal layer 190 is relaxed, so that peeling at the interface between the metal layer 190 and the organic insulating layer 170 can be suppressed. Further, since the display device 10 is resistant to thermal changes, the reliability of the display device 10 is improved.
  • the display device 10 can be modified or modified in various ways. Therefore, the display device 10A and the display device 10B, which are modified examples of the display device 10, will be described with reference to FIGS. 3 and 4.
  • the modified example of the display device 10 is not limited to the following.
  • FIG. 3 is a schematic partially enlarged view of the display device 10A according to the embodiment of the present invention. Specifically, FIG. 3 is a partially enlarged view of the area 11A of the display device 10A corresponding to the area 11 surrounded by the broken line shown in FIG.
  • the display device 10A includes an organic insulating layer 170A, a metal layer 190A, and a light emitting element 200.
  • the organic insulating layer 170A is provided with a recess 171A recessed from the upper surface of the organic insulating layer 170A.
  • the metal layer 190A is provided so as to cover the recess 171A.
  • the light emitting element 200 is bonded onto the metal layer 190A with a conductive material such as solder, silver paste, or ACF.
  • the depth of the recess 171A (the distance from the upper surface of the organic insulating layer 170A to the bottom surface of the recess 171A) is, for example, 0.2 ⁇ m or more and 10 ⁇ m or less. Further, the depth of the recess 171A is preferably 1 ⁇ 2 or more of the thickness of the metal layer 190, and more preferably a depth larger than the thickness of the metal layer 190. Further, the side surface of the recess 171A may have a taper. That is, the side surface of the recess 171A does not have to be perpendicular to the upper surface of the organic insulating layer 170A.
  • the angle formed by the upper surface of the organic insulating layer 170A and the side surface of the recess 171A is, for example, 20 degrees or more and 90 degrees or less, preferably 30 degrees or more and 80 degrees or less, and more preferably 40 degrees or more and 70 degrees or less.
  • the shape of the recess 171A can be circular, elliptical, or polygonal.
  • the shape of the recess 171A is preferably matched to the shape of the light emitting element 200. For example, if the shape of the light emitting element 200 is rectangular, the shape of the recess 171A is also preferably rectangular.
  • the metal layer 190A provided on the recess 171A covers not only the upper surface of the recess 171A but also the side surface of the recess 171A. That is, since the metal layer 190A is provided along the side surface of the recess 171A, the metal layer 190A includes a step 191A. Therefore, also in the display device 10A, since the metal layer 190A includes the step 191A, the stress of the metal layer 190 is relaxed in the heat treatment at the time of joining the light emitting element 200.
  • the metal layer 190A includes the step 191A due to the recess 171A provided on the organic insulating layer 170A. Therefore, in the heat treatment for joining the light emitting element 200, the stress of the metal layer 190A is relaxed, so that peeling at the interface between the metal layer 190A and the organic insulating layer 170A can be suppressed. Further, since the display device 10A is resistant to thermal changes, the reliability of the display device 10A is improved.
  • FIG. 4 is a schematic partially enlarged view of the display device 10B according to the embodiment of the present invention. Specifically, FIG. 4 is a partially enlarged view of the area 11B of the display device 10B corresponding to the area 11 surrounded by the broken line shown in FIG.
  • the display device 10B includes an organic insulating layer 170B, an inorganic insulating layer 172B, a metal layer 190B, and a light emitting element 200.
  • the inorganic insulating layer 172B has a predetermined pattern and is provided on the organic insulating layer 170B.
  • the metal layer 190B is provided so as to cover the inorganic insulating layer 172B.
  • the light emitting element 200 is bonded onto the metal layer 190B with a conductive material such as solder, silver paste, or ACF.
  • the thickness of the inorganic insulating layer 172B is, for example, 0.2 nm or more and 10 nm or less, preferably more than 1/2 the thickness of the metal layer 190 and further larger than the thickness of the metal layer 190.
  • the side surface of the inorganic insulating layer 172B may have a taper. That is, the side surface of the inorganic insulating layer 172B does not have to be perpendicular to the upper surface of the organic insulating layer 170B.
  • the angle formed by the upper surface of the organic insulating layer 170B and the side surface of the inorganic insulating layer 172B is, for example, 20 degrees or more and 90 degrees or less, preferably 30 degrees or more and 80 degrees or less, and more preferably 40 degrees or more and 70 degrees or less.
  • an insulating material can be used as the material of the inorganic insulating layer 172B.
  • Insulating material for example, silicon oxide (SiO x), silicon oxynitride (SiO x N y), silicon nitride (SiN x), silicon nitride oxide (SiN x O y), aluminum oxide (AlO x), oxynitride
  • Insulating material for example, silicon oxide (SiO x), silicon oxynitride (SiO x N y), silicon nitride (SiN x), silicon nitride oxide (SiN x O y), aluminum oxide (AlO x), oxynitride
  • AlO x aluminum oxide
  • AlN x O y aluminum nitride
  • AlN x aluminum nitride
  • SiO x N y and AlO x N y are silicon compounds and aluminum compounds containing nitrogen (N) in an amount smaller than oxygen (O).
  • SiN x Oy and AlN x Oy are silicon compounds and aluminum compounds containing oxygen in an amount smaller than that of nitrogen.
  • these materials may be laminated on the inorganic insulating layer 172B.
  • the inorganic insulating layer 172B has a predetermined pattern, and the shape of the pattern can be circular, elliptical, or polygonal.
  • the shape of the pattern of the inorganic insulating layer 172B is preferably matched to the shape of the light emitting element 200. For example, if the shape of the light emitting element 200 is rectangular, the shape of the inorganic insulating layer 172B is also preferably rectangular.
  • the metal layer 190B provided on the inorganic insulating layer 172B covers not only the upper surface of the inorganic insulating layer 172B but also the side surface of the inorganic insulating layer 172B. That is, since the metal layer 190B is provided along the side surface of the inorganic insulating layer 172B, the metal layer 190B includes a step 191B. Therefore, also in the display device 10B, since the metal layer 190B includes the step 191B, the stress of the metal layer 190B is relaxed in the heat treatment at the time of joining the light emitting element 200.
  • the metal layer 190B includes the step 191B due to the inorganic insulating layer 172B provided on the organic insulating layer 170B. Therefore, in the heat treatment in the bonding of the light emitting element 200, the stress of the metal layer 190B is relaxed, so that peeling at the interface between the metal layer 190B and the organic insulating layer 170B can be suppressed. Further, since the display device 10B is resistant to thermal changes, the reliability of the display device 10B is improved.
  • FIG. 5 is a schematic plan view of the display device 20 according to the embodiment of the present invention. Specifically, FIG. 5 is a plan view in a region 11C including two adjacent light emitting elements 200.
  • the display device 20 includes an organic insulating layer 170C, a first metal layer 190C-1, a second metal layer 190C-2, a first light emitting element 200-1, and a second light emitting element 200-2.
  • a convex portion 171C is stretched and provided on the upper surface of the organic insulating layer 170C so as to overlap the two light emitting elements 200. In other words, it can be said that the convex portion 171C is provided in a striped shape.
  • the first metal layer 190C-1 and the second metal layer 190C-2 are provided so as to cover the convex portion 171C.
  • the first light emitting element 200-1 is bonded to the first metal layer 190C-1 and the second light emitting element 200-2 is bonded to the second metal layer 190C-2 by a conductive material such as solder, silver paste, or ACF. Ru.
  • the convex portion 171C is stretched in only one direction, but the convex portion 171C may be stretched in two directions.
  • the convex portion can be provided so that the two straight lines intersect.
  • the light emitting element 200 is provided at the intersection of the two straight lines.
  • the first metal layer 190C-1 and the second metal layer 190C-2 provided on the convex portion 171C cover not only the upper surface of the convex portion 171C but also the side surface of the convex portion 171C. That is, since the first metal layer 190C-1 and the second metal layer 190C-2 are provided along the side surface of the convex portion 171C, the first metal layer 190C-1 and the second metal layer 190C-2 are provided, respectively.
  • the first step 191C-1 and the second step 191C-2 are included.
  • the first metal layer 190C-1 and the second metal layer 190C-2 include the first step 191C-1 and the second step 191C-2, respectively, the light emitting element 200 is joined. In the heat treatment, the stresses of the first metal layer 190C-1 and the second metal layer 190C-2 are relaxed.
  • the first metal layer 190C-1 and the second metal layer 190C-2 are separated by the convex portion 171C extending and provided on the organic insulating layer 170C, respectively. Includes one step 191C-1 and second step 191C-2. Therefore, in the heat treatment in the bonding of the light emitting element 200, the stress of the first metal layer 190C-1 and the second metal layer 190C-2 is relaxed, so that the interface between the first metal layer 190C-1 and the organic insulating layer 170C or It is possible to suppress peeling at the interface between the second metal layer 190C-2 and the organic insulating layer 170C. Further, since the display device 20 is resistant to thermal changes, the reliability of the display device 20 is improved.
  • FIGS. 6A to 6C are schematic partially enlarged views of the display device 10 in the method of manufacturing the display device 10 according to the embodiment of the present invention. Specifically, FIGS. 6A to 6C are partially enlarged views of the region 11 surrounded by the broken line shown in FIG. 1 in each step of the manufacturing method.
  • the layer below the organic insulating layer 170 is omitted.
  • the layer below the organic insulating layer 170 can be made by a usual method.
  • the organic insulating layer 170 is formed.
  • the organic insulating layer 170 can be formed by spin coating, slit coating, printing, inkjet, or the like.
  • the photoresist 300 is applied onto the organic insulating layer 170, exposed using the photoresist 300 as a mask, and the organic insulating layer 170 is half-etched (FIG. 6A).
  • the photoresist 300 on the organic insulating layer 170 may be exposed as a halftone mask to etch the organic insulating layer 170.
  • the photoresist 300 is stripped by the stripping solution.
  • the convex portion 171 is formed on the upper surface of the organic insulating layer 170.
  • the metal layer 190 is formed.
  • the metal layer 190 can be formed by sputtering, CVD, or the like.
  • the photoresist 310 is applied onto the metal layer 190, exposed using the photoresist 300 as a mask, and the metal layer 190 is etched (FIG. 6B).
  • the photoresist 310 is stripped by the stripping solution.
  • a step 191 is formed on the metal layer 190 that covers the convex portion 171.
  • a bonding material 230 such as solder, silver paste, or ACF is applied onto the metal layer 190, and the light emitting element 200 is bonded (FIG. 6C).
  • heat treatment can be performed when the light emitting element 200 is joined.
  • the metal layer 190 includes the step 191 due to the convex portion 171 provided on the organic insulating layer 170. Therefore, in the heat treatment in the bonding of the light emitting element 200, the stress of the metal layer 190 is relaxed, so that peeling at the interface between the metal layer 190 and the organic insulating layer 170 can be suppressed. Therefore, since the heat treatment temperature can be increased, the bonding strength between the metal layer 190 and the light emitting element 200 can be increased. Further, since the display device 10 is resistant to thermal changes, the reliability of the display device 10 is improved.
  • 10, 10A, 10B, 20 Display device, 11, 11A, 11B, 11C: Area, 100: Substrate, 110: First wiring layer, 120: Second wiring layer, 130, First insulation layer, 140: Second Conductive layer, 150: 2nd insulating layer, 160: 1st conductive layer, 170: Organic insulating layer, 170A, 170B, 170C: Organic insulating layer, 171: Convex, 171A: Concave, 171C: Convex, 172B: Inorganic Insulation layer, 180: 1st connection electrode, 190, 190A, 190B: metal layer, 190C-1: 1st metal layer, 190C-2: 2nd metal layer, 191, 191A, 191B: step, 191C-1: 1st 1 step, 191C-2: 2nd step, 200: light emitting element, 200-1: 1st light emitting element, 200-2: 2nd light emitting element, 210: 2nd connection electrode, 230: bonding material, 250:

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Device Packages (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
PCT/JP2020/028898 2019-08-29 2020-07-28 表示装置 WO2021039250A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE112020003308.2T DE112020003308T5 (de) 2019-08-29 2020-07-28 Anzeigevorrichtung
CN202080056696.3A CN114207850B (zh) 2019-08-29 2020-07-28 显示装置
US17/667,552 US12261154B2 (en) 2019-08-29 2022-02-09 Display device with a metal layer over an insulating layer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-156648 2019-08-29
JP2019156648A JP7311362B2 (ja) 2019-08-29 2019-08-29 表示装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US17/667,552 Continuation US12261154B2 (en) 2019-08-29 2022-02-09 Display device with a metal layer over an insulating layer

Publications (1)

Publication Number Publication Date
WO2021039250A1 true WO2021039250A1 (ja) 2021-03-04

Family

ID=74677360

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2020/028898 WO2021039250A1 (ja) 2019-08-29 2020-07-28 表示装置

Country Status (5)

Country Link
US (1) US12261154B2 (enrdf_load_stackoverflow)
JP (1) JP7311362B2 (enrdf_load_stackoverflow)
CN (1) CN114207850B (enrdf_load_stackoverflow)
DE (1) DE112020003308T5 (enrdf_load_stackoverflow)
WO (1) WO2021039250A1 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230036076A (ko) * 2020-07-10 2023-03-14 소니그룹주식회사 표시 장치, 발광 장치 및 전자 기기

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016512347A (ja) * 2013-03-15 2016-04-25 ルクスビュー テクノロジー コーポレイション 冗長性スキームを備えた発光ダイオードディスプレイ、及び統合欠陥検出検査を備えた発光ダイオードディスプレイを製造する方法
US20170062674A1 (en) * 2015-08-31 2017-03-02 Samsung Display Co., Ltd. Display apparatus and manufacturing method thereof
US20170170160A1 (en) * 2015-12-15 2017-06-15 Ultra Display Technology Corp. Opto-electronic apparatus and manufacturing method thereof
US20170242549A1 (en) * 2016-02-23 2017-08-24 Samsung Display Co., Ltd. Display apparatus
US20170271312A1 (en) * 2016-03-18 2017-09-21 Samsung Display Co., Ltd. Display apparatus and a method of manufacturing the same
US20180174519A1 (en) * 2016-12-19 2018-06-21 Lg Display Co., Ltd. Light emitting diode display device
US20190229170A1 (en) * 2017-06-30 2019-07-25 Innolux Corporation Display device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012252836A (ja) * 2011-06-01 2012-12-20 Canon Inc 表示装置
US9252375B2 (en) 2013-03-15 2016-02-02 LuxVue Technology Corporation Method of fabricating a light emitting diode display with integrated defect detection test
US8791474B1 (en) 2013-03-15 2014-07-29 LuxVue Technology Corporation Light emitting diode display with redundancy scheme
US10193038B2 (en) 2016-04-04 2019-01-29 Glo Ab Through backplane laser irradiation for die transfer
US10217678B2 (en) * 2016-06-14 2019-02-26 Innolux Corporation Display device and method of manufacturing the display device
KR20180020091A (ko) * 2016-08-17 2018-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
CN109037297B (zh) * 2018-08-09 2021-01-29 京东方科技集团股份有限公司 一种有机发光显示基板及其制作方法
US20220246594A1 (en) * 2019-06-11 2022-08-04 Kyocera Corporation Light emitter board and display device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016512347A (ja) * 2013-03-15 2016-04-25 ルクスビュー テクノロジー コーポレイション 冗長性スキームを備えた発光ダイオードディスプレイ、及び統合欠陥検出検査を備えた発光ダイオードディスプレイを製造する方法
US20170062674A1 (en) * 2015-08-31 2017-03-02 Samsung Display Co., Ltd. Display apparatus and manufacturing method thereof
US20170170160A1 (en) * 2015-12-15 2017-06-15 Ultra Display Technology Corp. Opto-electronic apparatus and manufacturing method thereof
US20170242549A1 (en) * 2016-02-23 2017-08-24 Samsung Display Co., Ltd. Display apparatus
US20170271312A1 (en) * 2016-03-18 2017-09-21 Samsung Display Co., Ltd. Display apparatus and a method of manufacturing the same
US20180174519A1 (en) * 2016-12-19 2018-06-21 Lg Display Co., Ltd. Light emitting diode display device
US20190229170A1 (en) * 2017-06-30 2019-07-25 Innolux Corporation Display device

Also Published As

Publication number Publication date
CN114207850A (zh) 2022-03-18
US20220158065A1 (en) 2022-05-19
CN114207850B (zh) 2024-06-04
JP2021033209A (ja) 2021-03-01
US12261154B2 (en) 2025-03-25
JP7311362B2 (ja) 2023-07-19
DE112020003308T5 (de) 2022-04-07

Similar Documents

Publication Publication Date Title
EP3530077B1 (en) Display device using semiconductor light emitting device and fabrication method thereof
US9666765B2 (en) Display device using semiconductor light emitting device and method of manufacturing the same
JP7317635B2 (ja) 表示装置
CN111384104A (zh) 在显示区域中具有通孔的电致发光显示装置
US20170012026A1 (en) Display device using semiconductor light emitting device and method for manufacturing the same
US20170200765A1 (en) Display device using semiconductor light emitting device and method for manufacturing
US11949047B2 (en) Display device using semiconductor light emitting element
KR20210006567A (ko) 발광소자 패키지 및 이를 이용한 디스플레이 패널
CN110364553B (zh) 有机发光二极管显示装置
JP7020566B2 (ja) 発光素子
JP7237536B2 (ja) 表示装置
KR20250071903A (ko) 센서를 포함하는 led 표시장치
KR20210130608A (ko) 발광 표시 장치 및 그 제조 방법
JP2021135328A (ja) 表示装置
US10276632B2 (en) Display device using semiconductor light-emitting diodes, and manufacturing method therefor
US12261154B2 (en) Display device with a metal layer over an insulating layer
CN119325326A (zh) 用于显示面板的母基板及使用其的显示面板
US20250185425A1 (en) Display Device and Method for Fabricating the Same
CN119451447A (zh) 显示设备
CN116404024A (zh) 发光元件及其应用的显示装置
WO2025086297A1 (zh) 一种显示基板、其制作方法及显示装置
CN119325313A (zh) 显示装置
CN119342965A (zh) 显示设备
CN120018699A (zh) 显示装置和该显示装置的制造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20857678

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 20857678

Country of ref document: EP

Kind code of ref document: A1