WO2021036211A1 - 量子点膜的封装方法以及封装量子点膜和应用 - Google Patents

量子点膜的封装方法以及封装量子点膜和应用 Download PDF

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WO2021036211A1
WO2021036211A1 PCT/CN2020/076580 CN2020076580W WO2021036211A1 WO 2021036211 A1 WO2021036211 A1 WO 2021036211A1 CN 2020076580 W CN2020076580 W CN 2020076580W WO 2021036211 A1 WO2021036211 A1 WO 2021036211A1
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film
quantum dot
dot film
polymer
barrier film
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PCT/CN2020/076580
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English (en)
French (fr)
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钟海政
李飞
柏泽龙
王晶晶
邓冲
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致晶科技（北京）有限公司
北京理工大学
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Definitions

  • the present application relates to a packaging method of a quantum dot film, a packaging quantum dot film and application, and belongs to the field of display technology.
  • lead halide-based perovskite nanocrystalline (also known as perovskite quantum dot) material has outstanding characteristics such as solution preparation, adjustable color, and high quantum yield, and has the potential to become a new generation
  • Display materials are used in the fields of light-emitting diode light, laser, optical detection, and biomarking.
  • perovskite nanocrystals Compared with the relatively mature II-VI group compound quantum dots (represented by CdSe), perovskite nanocrystals have a wider wavelength adjustment range and lower cost, and because they are new materials, my country is more promising for breakthroughs Foreign technical barriers have mastered the technological commanding heights in the display field.
  • organic-inorganic hybrid perovskite nanocrystals At present, the biggest problem in the application of organic-inorganic hybrid perovskite nanocrystals is the structural instability. Oxygen and water, ultraviolet light, solvents in the preparation process, and high temperature will cause it to decompose.
  • the decomposition process of organic-inorganic hybrid perovskite nanocrystals is as follows:
  • the stability of all-inorganic perovskite nanocrystals is significantly improved compared to organic-inorganic hybrid perovskite nanocrystals.
  • the structural stability of the perovskite nanocrystals still cannot meet the needs of practical applications.
  • the perovskite nanocrystals must be encapsulated and isolated from water. ⁇ Oxygen can be used for daily use.
  • the perovskite nanocrystalline film After encapsulation, the perovskite nanocrystalline film has a sandwich structure with barrier films on both sides and a perovskite nanocrystalline film in the middle.
  • the traditional packaging method is to coat perovskite quantum dots on a barrier film, and then use an adhesive to paste the other barrier film and the perovskite nanocrystalline layer.
  • the problem with this method is that the binder has reactivity with the perovskite nanocrystals, and the binder will destroy the perovskite nanocrystals during use, thereby reducing the luminescence performance of the film.
  • the development of adhesives for perovskite nanocrystalline film encapsulation requires a lot of work, and the use of adhesives will also increase the cost of the final product.
  • a quantum dot film packaging method is provided, which can significantly improve the stability of the quantum dot film and reduce product cost.
  • a quantum dot film packaging method The barrier film is encapsulated on both sides of the quantum dot film by hot pressing to obtain the encapsulated quantum dot film;
  • the quantum dot film is a composite film containing quantum dots and polymer.
  • the present application provides a quantum dot/polymer composite film packaging method.
  • the packaging method encapsulates the barrier film on both sides of the quantum dot film by hot pressing to obtain the encapsulated quantum dot/polymerization film. ⁇ Composite film.
  • the packaging method includes encapsulating the film layer A and the film layer B by hot pressing;
  • the film layer A contains a quantum dot film I and a first barrier film, and the quantum dot film I is attached to the first barrier film;
  • the film layer B includes a second barrier film
  • the quantum dot film I is located between the first barrier film and the second barrier film.
  • the film layer B is the second barrier film.
  • the film layer B further includes a quantum dot film II, and the quantum dot film II is attached to the second barrier film; the quantum dot film I and the quantum dot film II Relatively placed.
  • the film layer B further includes an inorganic phosphor film, and the inorganic phosphor film is attached to the second barrier film; the quantum dot film I is placed opposite to the inorganic phosphor film .
  • one side of the barrier film with quantum dot film attached to one side is placed opposite to the other barrier film (ie film layer B), or two single Place the quantum dot side of the barrier film with a quantum dot film attached to the side (ie film layer A and film layer B) opposite to each other, or place a barrier film with a quantum dot film attached to one side (ie film layer A)
  • the side with the quantum dots is placed opposite to the side with the phosphor in a barrier film with an inorganic phosphor film attached to one side (ie film layer B), and the packaging is completed by hot pressing.
  • the quantum dot films in the two barrier films with quantum dot films attached on one side may have different compositions.
  • the inorganic phosphor film includes an inorganic phosphor and a polymer, and the inorganic phosphor is embedded in the polymer;
  • the mass percentage of the inorganic phosphor and the polymer is 1-20 wt%.
  • the upper limit of the mass percentage in the inorganic phosphor and the polymer is independently selected from 2wt%, 10wt%, 15wt%, and 20wt%; the lower limit of the mass percentage in the inorganic phosphor and the polymer is independently selected from 1wt%, 2wt%, 10wt%, 15wt%.
  • the particle size of the inorganic phosphor is not greater than 200 ⁇ m.
  • the upper limit of the particle size of the inorganic phosphor is selected from 100 ⁇ m, 150 ⁇ m, and 200 ⁇ m; the lower limit of the particle size of the inorganic phosphor is selected from 10 ⁇ m, 100 ⁇ m, and 150 ⁇ m.
  • the thickness of the inorganic phosphor film is 5-200 ⁇ m.
  • the upper limit of the thickness of the inorganic phosphor film is independently selected from 50 ⁇ m, 100 ⁇ m, 150 ⁇ m, and 200 ⁇ m; the lower limit of the thickness of the inorganic phosphor film is independently selected from 5 ⁇ m, 50 ⁇ m, 100 ⁇ m, and 150 ⁇ m.
  • the quantum dots are embedded in the polymer
  • the mass percentage of the quantum dots and the polymer is 1-20 wt%.
  • the upper limit of the mass percentage of the quantum dots and the polymer is independently selected from 2wt%, 4wt%, 5wt%, 6wt%, 8wt%, 10wt%, 12wt%, 14wt%, 15wt%, 16wt%, 20wt%; the lower limit of the mass percentage in the quantum dots and the polymer is independently selected from 1wt%, 2wt%, 4wt%, 5wt%, 6wt%, 8wt%, 10wt%, 12wt%, 14wt%, 15wt%, 16wt%.
  • the thickness of the quantum dot film is 0.1-100 ⁇ m.
  • the upper limit of the thickness of the quantum dot film is selected from 0.5 ⁇ m, 1 ⁇ m, 5 ⁇ m, 10 ⁇ m, 20 ⁇ m, 30 ⁇ m, 50 ⁇ m, 70 ⁇ m, 80 ⁇ m, 90 ⁇ m, and 100 ⁇ m;
  • the lower limit of the thickness of the quantum dot film is selected from 0.1 ⁇ m, 0.5 ⁇ m, 1 ⁇ m, 5 ⁇ m, 10 ⁇ m, 20 ⁇ m, 30 ⁇ m, 50 ⁇ m, 70 ⁇ m, 80 ⁇ m, 90 ⁇ m.
  • the polymer in the quantum dot film or the polymer in the inorganic phosphor film is independently selected from polyvinylidene fluoride (PVDF), polyvinylidene fluoride and trifluoroethylene copolymer (P(VDF-TrFE) )), polyacrylonitrile (PAN), polyvinyl acetate (PVAc), cellulose acetate (CA), cyanocellulose (CNEC), polysulfone (PSF), aromatic polyamide (MPIA), polyimide (PI), polycarbonate (PC), polystyrene (PS), polymethyl methacrylate (PMMA), polyethylene (PE), polypropylene (PP), ethylene-vinyl acetate copolymer (EVA) At least one of.
  • PVDF polyvinylidene fluoride
  • P(VDF-TrFE) trifluoroethylene copolymer
  • PAN polyacrylonitrile
  • PVAc polyvinyl acetate
  • CA cellulose acetate
  • the barrier film includes polyvinylidene chloride film (PVDC), ethylene-vinyl alcohol copolymer film (EVOH), meta-dimethylamine and adipic acid polycondensate film (nylon), oxide plating At least one of the films.
  • PVDC polyvinylidene chloride film
  • EVOH ethylene-vinyl alcohol copolymer film
  • Nylon adipic acid polycondensate film
  • oxide plating At least one of the films.
  • the oxide includes at least one of Si 3 O 4 , Si 2 O 3 , SiO 2 , and Al 2 O 3.
  • the thickness of the barrier film is 5-1500 ⁇ m.
  • the upper limit of the thickness of the barrier film is selected from 10 ⁇ m, 15 ⁇ m, 50 ⁇ m, 100 ⁇ m, 200 ⁇ m, 500 ⁇ m, 700 ⁇ m, 800 ⁇ m, 1000 ⁇ m, 1200 ⁇ m, 1400 ⁇ m, 1500 ⁇ m;
  • the lower limit of the thickness of the barrier film is selected from 5 ⁇ m, 10 ⁇ m, 15 ⁇ m, 50 ⁇ m , 100 ⁇ m, 200 ⁇ m, 500 ⁇ m, 700 ⁇ m, 800 ⁇ m, 1000 ⁇ m, 1200 ⁇ m, 1400 ⁇ m.
  • the conditions of the hot pressing are: the hot pressing temperature is 40°C to 180°C; the hot pressing time is 0.01 to 40s.
  • the upper limit of the temperature of the hot pressing is selected from 50°C, 60°C, 70°C, 80°C, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, 160°C, 170°C or 180°C;
  • the lower limit is selected from 40°C, 50°C, 60°C, 70°C, 80°C, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, 160°C or 170°C .
  • the upper limit of the hot pressing time is selected from 0.05s, 0.5s, 1s, 2s, 3s, 5s, 8s, 10s, 15s, 20s, 25s, 30s, 35s or 40s; the lower limit is selected from 0.01s, 0.05 s, 0.5s, 1s, 2s, 3s, 5s, 8s, 10s, 15s, 20s, 25s, 30s or 35s.
  • the packaging method includes any one of method one, method two, or method three;
  • Method one includes: placing a first barrier film with a quantum dot film I attached to one side opposite to another second barrier film, the quantum dot film I facing the second barrier film, by means of hot pressing Complete the package;
  • Method two includes: placing a first barrier film with a quantum dot film I attached on one side and a second barrier film with a quantum dot film II attached on one side opposite to each other, the quantum dot film I and the quantum dot film II Relatively, the packaging is completed by hot pressing;
  • Method three includes: placing a first barrier film with a quantum dot film I attached on one side and a second barrier film with an inorganic phosphor film attached on one side opposite to each other.
  • the quantum dot film I and the inorganic phosphor film are placed opposite each other.
  • the film is relatively, and the packaging is completed by hot pressing.
  • the second method includes adding a polymer film layer between the quantum dot film I and the quantum dot film II, and completing the encapsulation by means of hot pressing;
  • the third method includes: adding a polymer film layer between the quantum dot film I and the inorganic phosphor film, and completing the encapsulation by hot pressing.
  • the polymer film layer includes polyvinylidene fluoride (PVDF), polyvinylidene fluoride and trifluoroethylene copolymer (P(VDF-TrFE)), polyacrylonitrile (PAN), polyvinyl acetate ( PVAc), cellulose acetate (CA), cyanocellulose (CNEC), polysulfone (PSF), aromatic polyamide (MPIA), polyimide (PI), polycarbonate (PC), polystyrene ( At least one of PS), polymethyl methacrylate (PMMA), polyethylene (PE), polypropylene (PP), and ethylene-vinyl acetate copolymer (EVA).
  • PVDF polyvinylidene fluoride
  • P(VDF-TrFE) trifluoroethylene copolymer
  • PAN polyacrylonitrile
  • PVAc polyvinyl acetate
  • CA cellulose acetate
  • CNEC cyanocellulose
  • PSF polysulfone
  • MPIA
  • the thickness of the polymer film layer is 5-100 ⁇ m.
  • the upper limit of the thickness of the polymer film layer is selected from 10 ⁇ m, 15 ⁇ m, 20 ⁇ m, 25 ⁇ m, 50 ⁇ m, 70 ⁇ m, and 100 ⁇ m; the lower limit of the thickness of the polymer film layer is selected from 5 ⁇ m, 10 ⁇ m, 15 ⁇ m, 20 ⁇ m, 25 ⁇ m, 50 ⁇ m, 70 ⁇ m .
  • the quantum dots in this application can be any suitable quantum dots in the prior art, and this application does not make specific limitations.
  • the following structures are some possible quantum dots.
  • the quantum dots are selected from any one of perovskite-type quantum dots, II-VI series quantum dots, InP series quantum dots or CuInS 2 series quantum dots.
  • the perovskite-type quantum dots are selected from the group having the general structural formula ABX 3 , the general structural formula A 3 B 2 X 9 , the general structural formula A 2 BX 6 or the general structural formula (RNH 3 ) 2 A m- Any one of the compounds in 1 B m X 3m+1;
  • the A position is a monovalent metal cation or a monovalent organic cation
  • the B position is a divalent or trivalent metal cation
  • X is a halogen anion
  • R represents an alkyl group or an aromatic group
  • m represents a metal cation layer between organic chains The value of m ranges from 1 to 100;
  • A is selected from CH 3 NH 3 + , CH(NH)NH 3 + , Cs + , Rb + , C 6 H 5 CH 2 NH 3 + , C 6 H 5 (CH 2 ) 2 NH 3 + At least one
  • B is selected from at least one of Pb 2+ , Cu 2+ , Sb 3+ , Bi 3+ , In 3+ , Al 3+ , Sn 2+ , Cd 2+ , and Zn 2+ .
  • the group II-VI series quantum dots include any one of group II-VI quantum dots, group II-VI doped quantum dots, and group II-VI core-shell structure quantum dots;
  • the II-VI group quantum dots include any one of the compounds having the general structural formula A’B’
  • A' is selected from one or two of Cd, Zn, Cu, Pb, Mn, and Sn;
  • the II-VI group doped quantum dots contain doping elements, and the doping elements include at least one of Cu, Ag, Mn, and Al;
  • the inner core is group II-VI quantum dots
  • the outer shell is group II-VI compound components.
  • the InP series quantum dots include any one of InP quantum dots, InP doped quantum dots, and InP core-shell structure quantum dots;
  • the InP-doped quantum dots contain doping elements, and the doping elements include at least one of Cd, Zn, Cu, Ag, Mn, and Al;
  • the core is an InP quantum dot
  • the outer shell is a II-VI group compound component.
  • the CuInS 2 series quantum dots include any one of CuInS 2 quantum dots and CuInS 2 doped quantum dots;
  • the CuInS 2 doped quantum contains a doping element, and the doping element includes at least one of Cd, Zn, Ag, Mn, and Al.
  • the encapsulated quantum dot film includes a quantum dot film and a barrier film, the quantum dot film being sandwiched between the barrier films;
  • the encapsulated quantum dot film is prepared by the encapsulation method described in any one of the above.
  • the encapsulated quantum dot film includes film layer A and film layer B;
  • the film layer A includes a first barrier film and a quantum dot film I in order from top to bottom;
  • the film layer B contains a second barrier film, and the film layer B is located under the quantum dot film I.
  • the encapsulated quantum dot film includes any one of structure I, structure II or structure III;
  • the encapsulated quantum dot film includes a first barrier film, a quantum dot film I, and a second barrier film in order from top to bottom;
  • the encapsulated quantum dot film sequentially includes a first barrier film, a quantum dot film I, a quantum dot film II, and a second barrier film from top to bottom;
  • the encapsulated quantum dot film sequentially includes a first barrier film, a quantum dot film I, an inorganic phosphor film, and a second barrier film from top to bottom.
  • the quantum dot film I and the quantum dot film II contain the same quantum dots or contain different quantum dots.
  • the encapsulated quantum dot film further includes a polymer film layer; the polymer film layer is located between the film layer A and the film layer B.
  • the encapsulated quantum dot film includes structure IV or structure V;
  • the encapsulated quantum dot film includes a first barrier film, a quantum dot film I, a polymer film layer, a quantum dot film II, and a second barrier film in order from top to bottom;
  • the encapsulated quantum dot film sequentially includes a first barrier film, a quantum dot film I, a polymer film layer, an inorganic phosphor film, and a second barrier film from top to bottom.
  • an encapsulated quantum dot film prepared by the encapsulation method of any one of the above or the encapsulated quantum dot film of any one of the above is used in the field of display backlight module and filter film.
  • the application is also provided.
  • the present invention uses the hot pressing method to encapsulate the perovskite quantum dot/polymer composite film, which realizes the adhesive-free encapsulation, improves the luminescence stability of the perovskite quantum dot/polymer composite film, and reduces the production cost.
  • the packaging method can also be applied to the packaging of other quantum dots, such as CdSe series quantum dots, InP series quantum dots, and CuInS 2 series quantum dots.
  • the encapsulated quantum dot/polymer composite film is used in the display backlight module to improve the display color gamut, contrast and brightness.
  • the method for encapsulating quantum dots/polymer composite films using hot pressing provided in the present application realizes glue-free bonding, reduces process complexity and types of raw materials, and effectively reduces product costs.
  • the packaging method can encapsulate the red and green quantum dots in layers, avoid re-absorption of light, and improve the luminous efficiency.
  • FIG. 1 is a schematic diagram of the structure of a quantum dot film in an embodiment of this application.
  • the perovskite quantum dots are uniformly distributed in the polymer matrix material.
  • FIG. 2 is a schematic diagram of a process of thermocompression packaging of a quantum dot film with a non-intercalating polymer according to an embodiment of the application, and the nanocrystalline film in the figure is the quantum dot film.
  • Figure 3 is an embodiment of the application of red light perovskite quantum dot/polymer film layer and green light perovskite quantum dot/polymer film layer without intercalation polymer hot-press packaging quantum dot/polymer composite Schematic diagram of the structure after film encapsulation.
  • FIG. 4 is a schematic diagram of a process of thermally pressing a quantum dot film with an intercalated polymer in an embodiment of the application.
  • Figure 5 shows an embodiment of the application in which the red light perovskite quantum dot/polymer film layer and the green light perovskite quantum dot/polymer film layer have an intercalated polymer hot-press encapsulated quantum dot/polymer composite Schematic diagram of the structure after film encapsulation.
  • FIG. 6 is a schematic diagram of the structure after the perovskite quantum dot/polymer film layer and the CdSe quantum dot/polymer film layer are encapsulated with an intercalated polymer thermal compression package quantum dot/polymer composite film in an embodiment of the application.
  • FIG. 7 is a schematic diagram of the structure of the perovskite quantum dot/polymer film layer and the InP quantum dot/polymer film layer between the perovskite quantum dot/polymer film layer and the intercalated polymer thermocompression package after the quantum dot/polymer composite film is packaged in an embodiment of the application.
  • FIG. 8 is a schematic diagram of the structure of the CdSe quantum dot/polymer film layer and the CdSe quantum dot/polymer film layer between the CdSe quantum dot/polymer film layer after the quantum dot/polymer composite film is encapsulated by thermal compression encapsulation of the polymer.
  • Fig. 9 is a schematic diagram of the structure after the quantum dot/polymer composite film is encapsulated with an intercalated polymer between the InP quantum dot/polymer film layer and the InP quantum dot/polymer film layer in an embodiment of the application.
  • FIG. 10 is a schematic diagram of the structure of the CdSe quantum dot/polymer film layer and the InP quantum dot/polymer film layer between the CdSe quantum dot/polymer film layer and the intercalated polymer thermocompression package after the quantum dot/polymer composite film is packaged in an embodiment of the application.
  • FIG. 11 is a schematic diagram of the structure after the quantum dot/polymer composite film is packaged without intercalation between the perovskite quantum dot/polymer film layer and the phosphor/polymer composite film layer in an embodiment of the application.
  • FIG. 12 is a graph showing the spectrum change of the green light perovskite quantum dot/polymer composite film after hot pressing and packaging at different temperatures in an embodiment of this application.
  • FIG. 13 is a graph showing the spectrum change of a red light perovskite quantum dot/polymer composite film after hot pressing and packaging at different temperatures in an embodiment of this application.
  • FIG. 14 is a white light emission spectrum diagram of the film after hot press packaging in an embodiment of the application.
  • FIG. 15 is an emission spectrum diagram of two perovskite quantum dot films of different compositions without an isolation layer between two different compositions of the film after hot pressing and packaging in an embodiment of the application.
  • FIG. 16 is a schematic diagram of a structure of a quantum dot/polymer composite film with dual-color emission of red light and green light after packaging in an embodiment of the application applied to an edge-type backlight module.
  • FIG. 17 is a schematic diagram of the structure of a quantum dot/polymer composite film with dual-color emission of red light and green light after packaging in an embodiment of the application applied to a direct-type backlight module.
  • the present invention proposes a quantum dot/polymer film encapsulation method.
  • the encapsulation method includes encapsulating a barrier film on both sides of the quantum dot film by hot pressing to obtain Encapsulated quantum dot/polymer composite film.
  • two barrier films with quantum dot films attached to one side are placed opposite each other (refer to Figure 2); or one barrier film with quantum dot films attached to one side is placed in opposite directions.
  • the side with the quantum dot film is placed opposite to the other barrier film; or the side with the quantum dots in the barrier film with the quantum dot film attached to one side and the other side with the inorganic phosphor film attached to the other side
  • the side with phosphors in the barrier film is placed opposite; the packaging is completed by hot pressing.
  • the quantum dot films in the two barrier films with quantum dot films attached on one side can be of different components.
  • one side of the barrier film is attached with green light perovskite quantum dots, and the other is the barrier film. Red light perovskite quantum dots are attached to one side.
  • one side of the barrier film is attached with perovskite quantum dots, and the other side of the barrier film is attached with phosphors.
  • the quantum dot film in the packaging method is a composite film material formed by embedding quantum dot material in a polymer matrix.
  • the mass percentage of quantum dot material in the polymer matrix is 1-20 %;
  • the thickness of the quantum dot film is 0.1-100 ⁇ m.
  • the quantum dots in the quantum dot film are II-VI series quantum dot materials, including CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe and their alloy quantum dot materials such as CdZnS, CdZnSe, CdZnTe, And doped quantum dot materials of element ions such as Cu, Ag, Mn, Al, and core-shell structure quantum dots;
  • InP series quantum dot materials including Cd, Zn, Cu, Ag and other element ions doped quantum dots, and core-shell structure quantum dots;
  • CuInS 2 series quantum dot materials including Cd, Zn, Ag and other element ions doped quantum dots, and core-shell structure quantum dots.
  • the general structural formula of the nanomaterial with a perovskite structure is ABX 3 , A 3 B 2 X 9 , A 2 BX 6 or (RNH 3 ) 2 A m-1 B m X 3m+1 , where A position is a monovalent metal cation or a monovalent organic cation, B position is a divalent or trivalent metal cation, X is a halogen anion, R represents an alkyl group or an aromatic group, and m represents an organic chain The number of metal cation layers.
  • A is selected from at least one of CH 3 NH 3 + , CH(NH)NH 3 + , and Cs + ;
  • B is selected from Pb 2+ , Cu 2+ , Ag + , Sb 3+ , Bi 3+ , At least one of In 3+ and Al 3+.
  • the polymer matrix used to embed quantum dots in the packaging method is polyvinylidene fluoride (PVDF), polyvinylidene fluoride and trifluoroethylene copolymer (P(VDF-TrFE)), polyvinylidene fluoride (PVDF), polyvinylidene fluoride and trifluoroethylene copolymer (P(VDF-TrFE)), Acrylonitrile (PAN), polyvinyl acetate (PVAc), cellulose acetate (CA), cyanocellulose (CNEC), polysulfone (PSF), aromatic polyamide (MPIA), polyimide (PI), At least one of polycarbonate (PC), polystyrene (PS), polymethyl methacrylate (PMMA), polyethylene (PE), polypropylene (PP), ethylene-vinyl acetate copolymer (EVA) .
  • PVDF polyvinylidene fluoride
  • PVDF-TrFE trifluoroethylene copolymer
  • the additional polymer film layer referring to FIG. 4, the thickness of the additional polymer film layer is 5-100 ⁇ m.
  • the inorganic phosphor film is a composite film material formed by embedding inorganic phosphor material into a polymer matrix, and the mass percentage of the inorganic phosphor material in the polymer matrix is 1-20%; the inorganic phosphor film The thickness is 5-200 ⁇ m.
  • the selected inorganic fluorescent material has a particle size not greater than 200 ⁇ m to ensure that the prepared barrier film with a phosphor film attached to one side has excellent optical properties.
  • the composition of the inorganic phosphor may be: YAG: Ce 3+ yellow powder, KSF: Mn 4+ red powder, ⁇ -SiAlON: Eu 2+ , ⁇ -SiAlON: Eu 2+ .
  • the inserted additional polymer film layer is polyvinylidene fluoride (PVDF), polyvinylidene fluoride and trifluoroethylene copolymer (P(VDF-TrFE)), polyacrylonitrile (PAN), poly Vinyl acetate (PVAc), cellulose acetate (CA), cyanocellulose (CNEC), polysulfone (PSF), aromatic polyamide (MPIA), polyimide (PI), polycarbonate (PC), At least one of polystyrene (PS), polymethyl methacrylate (PMMA), polyethylene (PE), polypropylene (PP), and ethylene-vinyl acetate copolymer (EVA).
  • PVDF polyvinylidene fluoride
  • P(VDF-TrFE) trifluoroethylene copolymer
  • PAN polyacrylonitrile
  • PVAc poly Vinyl acetate
  • CA cellulose acetate
  • CNEC cyanocellulose
  • PSF polysulfone
  • MPIA poly
  • the inserted polymer functional film layer can play a role in isolation, buffering, and stability enhancement. Prevent different quantum dots on the two barrier films or quantum dots and phosphor particles from undergoing chemical reaction changes during thermal pressure overshoot, such as the red and green quantum dots when the red perovskite quantum dots meet the green perovskite quantum dots after hot pressing The luminous efficiency of the dots will be reduced.
  • the barrier film is at least one of a polyvinylidene chloride film, an ethylene-vinyl alcohol copolymer film, a meta-dimethylamine and adipic acid condensation polymer film, and an oxide-plated film .
  • the conditions of the hot pressing are: the hot pressing temperature is 40°C to 180°C; the hot pressing time is 0.01s-40s.
  • the adjustment of the hot pressing temperature is mainly based on the melting point and softening temperature of the selected polymer matrix.
  • the hot pressing temperature is between the softening temperature and the melting point of the polymer and cannot be higher than the melting point.
  • the fine adjustment of the hot pressing temperature can also fine-tune the emission wavelength of the quantum dot film obtained by the final hot pressing, refer to FIG. 12.
  • the upper limit of the temperature of the hot pressing is selected from 50°C, 60°C, 70°C, 80°C, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, 160°C, 170°C or 180 °C; the lower limit is selected from 40°C, 50°C, 60°C, 70°C, 80°C, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, 160°C or 170°C.
  • the upper limit of the hot pressing time is selected from 0.05s, 1s, 3s, 5s, 10s, 20s, 30s or 40s; the lower limit is selected from 0.01s, 0.05s, 1s, 3s, 5s, 10s, 20s or 30s.
  • the choice of hot pressing time is related to the hot pressing temperature of the previously selected polymer matrix.
  • the hot pressing temperature is between the softening temperature and the melting point. The closer the temperature is to the melting point, the shorter the hot pressing time.
  • the hot pressing temperature is close to the softening temperature.
  • the hot pressing time can be lengthened. By selecting a suitable hot pressing temperature and hot pressing time, the hot pressing package can be better realized, and the peeling force of the film of the hot pressing package can be guaranteed to meet the requirements, and the influence of thermal quenching on the quantum dots can also be reduced.
  • test instrument for the peeling force between the films after packaging is KT-PSA-1056A;
  • the luminescence performance of the encapsulated film was tested using Edinburgh FLSP920 fluorescence spectrometer.
  • the composite luminescent film is a quantum dot film, and the mass percentage of quantum dots and polymer is 1wt%.
  • the thickness of the film is 100 ⁇ m) EVOH barrier film, the thickness of the barrier film is 5 ⁇ m, (perovskite nanocrystal/polymer composite film structure is shown in Figure 1), these two barrier films are coated with MAPbBr 3 nanocrystal/PVDF Place one side of the composite light-emitting film opposite, and then slowly pass through the laminating machine (as shown in Figure 2).
  • the roller temperature of the laminator is set to 160°C, and the hot pressing processing time is 5s.
  • the two films are thermally pressed by a laminator to achieve glue-free packaging, and the peeling force between the films after packaging is >5N.
  • the luminescence peak of the film after hot pressing is at 524nm and the half-peak width is 28nm, which is suitable for backlight display.
  • the coating method of CH 3 NH 3 PbBr 3 (MAPbBr 3 ) nanocrystalline/PVDF composite luminescent film refers to the following documents: (1) Chinese patent: CN201611039717.2, a perovskite quantum dot/polymer composite fluorescent film Preparation method; (2) Document Advanced Materials, 2016, 28(41): 9163-9168.
  • the preparation methods of the perovskite quantum dot composite luminescent film based on different components involved in the present invention all refer to the above-mentioned documents.
  • the composite luminescent film is a quantum dot film, and the mass percentage of quantum dots and polymer is 20wt%
  • the thickness of the composite light-emitting film is 0.1 ⁇ m) nylon barrier film (the thickness of the barrier film is 1500 ⁇ m) and another nylon barrier film (the thickness of the barrier film is 1500 ⁇ m), the barrier film is coated with MAPbBr 3 nanocrystalline/PE composite light-emitting film Place one side of the film opposite to the other barrier film, and then slowly pass through the laminator.
  • the roller temperature of the laminator is set to 80°C, and the hot pressing processing time is 15s.
  • the two films are thermally pressed by a laminator to achieve glue-free packaging, and the peeling force between the films after packaging is >3N.
  • SiO 2 barrier film Take a piece of SiO 2 barrier film (the thickness of the barrier film is 20 ⁇ m) coated with a green light MAPbBr 3 quantum dot/EVA composite luminescent film (the mass percentage of quantum dots and polymer is 10wt%, and the thickness of the composite luminescent film is 20 ⁇ m) 1000 ⁇ m) and one side coated with red light CsPbI 3 /RbPbI 3 nanocrystal/EVA composite luminescent film (quantum dots and polymer mass percentage is 15wt%, composite luminescent film thickness is 20 ⁇ m) SiO 2 barrier Film (barrier film thickness is 1000 ⁇ m). Then slowly pass through the laminator. The roller temperature of the laminator is set to 40°C, and the hot pressing processing time is 10s. The two films are thermally pressed by a laminator to achieve glue-free packaging, and the peeling force between the films after packaging is >10N (the structure after packaging is shown in Figure 3).
  • PVDC barrier film (the thickness of the barrier film is 800 ⁇ m) coated with a green light CsPbBr 3 quantum dot/EVA composite luminescent film on one side (the mass percentage of quantum dots and polymer is 14wt%, and the thickness of the composite luminescent film is 50 ⁇ m) ) And the other side coated with red light MAPbBr 2 I nanocrystal/PMMA composite luminescent film (the composite luminescent film is a quantum dot film, the mass percentage of quantum dots and polymer is 10wt%, and the thickness of the composite luminescent film 50 ⁇ m) PVDC barrier film (the thickness of the barrier film is 700 ⁇ m), the side of the barrier film coated with the nanocrystalline/polymer composite light-emitting film is placed opposite and a layer of 10 ⁇ m PVDC film is inserted between them ( Figure 4 The schematic diagram shows).
  • the roller temperature of the laminator is set to 120°C, and the hot pressing processing time is 2s.
  • the two films are thermally pressed by a laminator to achieve glue-free packaging, and the peeling force between the films after packaging is >3N (the structure after packaging is shown in Figure 5).
  • the thickness of the barrier film is 50 ⁇ m
  • a green light CsPbBr 3 quantum dot/PI composite luminescent film on one side
  • an Al 2 O 3 barrier film barrier
  • a red light CdSe quantum dot/PC composite luminescent film on one side
  • the mass percentage of quantum dots and polymer is 14wt%, and the thickness of the composite luminescent film is 50 ⁇ m
  • the film thickness is 50 ⁇ m
  • the side of the barrier film coated with the nanocrystalline/polymer composite light-emitting film is placed opposite and a layer of P(CDF-TrFE) film of 5 ⁇ m is inserted between them.
  • the roller temperature of the laminator is set to 180°C, and the hot pressing processing time is 30s.
  • the two films are heat-pressed by a laminator to achieve glue-free packaging, and the peeling force between the films after packaging is >7N (the structure after packaging is shown in Figure 6).
  • the coating of the red light CdSe quantum dot/PC composite luminescent film refers to the existing method: 0.04g CdSe quantum dots, 3gPC matrix material, 17g chloroform solvent are mixed together to form a uniform solution, and the solution is coated on Al The surface of the 2 O 3 barrier film can be dried to obtain a barrier film coated with red CdSe quantum dots on one side.
  • the composite films of InP quantum dots, CuInS 2 quantum dots, and inorganic phosphors involved in other embodiments of the present invention are coated in the same or similar manner. The difference lies in the replacement of the type of solvent, the type of polymer matrix, and the addition of some necessary additive components.
  • PVDC barrier film (the thickness of the barrier film) coated with a green light CsPbBr 2.9 I 0.1 quantum dot/PVAc composite luminescent film (the mass percentage of quantum dots and polymer is 5wt%, and the thickness of the composite luminescent film is 80 ⁇ m) on one side 100 ⁇ m) and a nylon barrier film coated with a red light InP quantum dot/EVA composite luminescent film on one side (the thickness of the barrier film is 100 ⁇ m), and the barrier film is coated with a nanocrystalline/polymer composite luminescent film. Place the sides facing each other and insert a 15 ⁇ m PC film between them. Then slowly pass through the laminator.
  • the roller temperature of the laminating machine is set to 120°C, and the hot pressing processing time is 0.01s.
  • the two films are thermally pressed by a laminator to achieve glue-free packaging, and the peeling force between the films after packaging is >2N (the structure after packaging is shown in Figure 7).
  • the coating method of InP quantum dots/EVA composite luminescent film 0.01g InP quantum dots, 2g EVA matrix material, 12g chloroform solvent are mixed together to form a uniform solution, and the solution is coated on the surface of the nylon barrier film , The barrier film coated with red light InP quantum dots on one side can be obtained by drying.
  • the roller temperature of the laminating machine is set to 180°C, and the hot pressing processing time is 8s.
  • the two films are thermally pressed by a laminator to achieve glue-free packaging, and the peeling force between the films after packaging is >3N (the structure after packaging is shown in Figure 8).
  • CdSe with different particle sizes emits light of different colors.
  • the thickness of the barrier film is 0.5 ⁇ m
  • the thickness of the barrier film is 0.5 ⁇ m
  • the thickness of the barrier film is 0.5 ⁇ m
  • the thickness of the barrier film is 15 ⁇ m
  • the side of the barrier film coated with the nanocrystalline/polymer composite light-emitting film is placed opposite and a layer of 25 ⁇ m PS film is inserted between them.
  • the roller temperature of the laminator is set to 150°C, and the hot pressing processing time is 40s.
  • the two films are thermally pressed by a laminator to achieve glue-free packaging, and the peeling force between the films after packaging is >9N (the structure after packaging is shown in Figure 9).
  • PVDC barrier film (the thickness of the barrier film is 200 ⁇ m) coated with a green light CdSe quantum dot/PS composite luminescent film on one side (the mass percentage of quantum dots and polymer is 4wt%, and the thickness of the composite luminescent film is 0.5 ⁇ m) )
  • a PVDC barrier film (barrier film thickness) coated with a red light InP quantum dot/CNEC composite luminescent film on one side (the mass percentage of quantum dots and polymer is 6wt%, and the thickness of the composite luminescent film is 0.5 ⁇ m) 200 ⁇ m)
  • the side of the barrier film coated with the nanocrystalline/polymer composite light-emitting film is placed opposite and a layer of 10 ⁇ m EVA film is inserted between them.
  • the roller temperature of the laminating machine is set to 100°C, and the hot pressing processing time is 35s.
  • the two films are thermally pressed by a laminator to achieve glue-free packaging, and the peeling force between the films after packaging is >11N (the structure after packaging is shown in Figure 10).
  • EVOH barrier film Take a piece of EVOH barrier film (barrier film thickness) coated with cyan light MAPbBr 2.9 Cl 0.1 quantum dot/PP composite luminescent film (the mass percentage of quantum dots and polymer is 8wt%, the thickness of composite luminescent film is 5 ⁇ m) 10 ⁇ m) and the other side is coated with yellow light YAG: Ce 3+ phosphor/PE composite luminescent film (the composite luminescent film is an inorganic phosphor film, the mass percentage of phosphor and polymer is 1wt%, inorganic The thickness of the phosphor film is 5 ⁇ m, the particle size of the phosphor is 50 ⁇ 200 ⁇ m) EVOH barrier film (barrier film thickness is 10 ⁇ m), the barrier film is coated with nanocrystalline/polymer composite luminescent film and phosphor/polymer One side of the composite luminescent film is placed opposite and a layer of 10 ⁇ m PVDC film is inserted between them.
  • the roller temperature of the laminator is set to 120°C, and the hot pressing processing time is 25s.
  • the two films are thermally pressed by a laminator to achieve glue-free packaging, and the peeling force between the films after packaging is >4.5N (the structure after packaging is shown in Figure 11).
  • the coating method of yellow light YAG:Ce 3+ phosphor/PE composite luminescent film mix 1g YAG:Ce 3+ phosphor, 3g PE matrix material, and 10g chloroform solvent to form a uniform solution.
  • the solution is coated on the surface of the EVOH barrier film and dried to obtain a barrier film coated with yellow light YAG:Ce 3+ phosphor on one side.
  • a nylon barrier film (the thickness of the barrier film is 100 ⁇ m) coated with a green light MAPbBr 3 quantum dot/PS composite luminescent film (the mass percentage of quantum dots and polymer is 5wt%, and the thickness of the composite luminescent film is 10 ⁇ m) ) And the other side is coated with red light KSF: Mn 4+ phosphor/EVA composite luminescent film (the mass percentage of phosphor and polymer is 20wt%, the thickness of the inorganic phosphor film is 200 ⁇ m, the particles of phosphor 10 ⁇ 150 ⁇ m) nylon barrier film (barrier film thickness is 100 ⁇ m), the side of the barrier film coated with nanocrystalline/polymer composite light-emitting film and phosphor/polymer composite light-emitting film is placed opposite and placed between them Insert a layer of 20 ⁇ m PMMA film in between.
  • a green light MAPbBr 3 quantum dot/PS composite luminescent film the mass percentage of quantum dots and polymer is 5wt%, and the thickness
  • the roller temperature of the laminator is set to 100°C, and the hot pressing processing time is 5s.
  • the two films are thermally pressed by a laminator to achieve glue-free packaging, and the peeling force between the films after packaging is >5N.
  • the thickness of the barrier film is 1100 ⁇ m) and the other side is coated with a yellow light Cs 2 AgBiBr 6 /PVDC composite luminescent film (the mass percentage of quantum dots and polymer is 10wt%, and the thickness of the composite luminescent film is 20 ⁇ m) Al 2 O 3 barrier film (the thickness of the barrier film is 1100 ⁇ m), the side of the barrier film coated with the nanocrystalline/polymer composite light-emitting film is placed opposite and a layer of 10 ⁇ m PMMA film is inserted between them. Then slowly pass through the laminator.
  • the roller temperature of the laminator is set to 110°C, and the hot pressing processing time is 0.05s.
  • the two films are hot-pressed by a laminator to achieve glue-free packaging, and the peeling force between the films after packaging is >6N.
  • PVDC barrier film (barrier) coated on one side with a green light MAPb 0.95 Sn 0.05 Br 3 quantum dot/PMMA composite luminescent film (the mass percentage of quantum dots and polymer is 8wt%, and the thickness of the composite luminescent film is 20 ⁇ m).
  • the film thickness is 1000 ⁇ m) and the other side is coated with red light PEA 2 SnI 4 (PEA is phenethylamine) two-dimensional material/PVDC composite luminescent film (the mass percentage of quantum dots and polymer is 5wt%, composite luminescence
  • the thickness of the film is 20 ⁇ m) EVOH barrier film (the thickness of the barrier film is 1000 ⁇ m), the side of the barrier film coated with the nanocrystalline/polymer composite light-emitting film is placed opposite and a layer of 20 ⁇ m PC film is inserted between them. Then slowly pass through the laminator.
  • the roller temperature of the laminator is set to 130°C, and the hot pressing processing time is 1s.
  • the two films are heat-pressed by a laminator to achieve glue-free packaging, and the peeling force between the films after packaging is >4N.
  • PVDC barrier film (barrier film) coated on one side with a green light PEA 2 PbI 4 two-dimensional material/PS composite luminescent film (the mass percentage of quantum dots and polymer is 14wt%, and the thickness of the composite luminescent film is 20 ⁇ m)
  • the thickness is 200 ⁇ m) and the other side is coated with a red PEA 2 SnI 4 /PS composite luminescent film (the mass percentage of quantum dots and polymer is 8wt%, and the thickness of the composite luminescent film is 50 ⁇ m) nylon barrier film ( The thickness of the barrier film is 200 ⁇ m), the side of the barrier film coated with the nanocrystalline/polymer composite light-emitting film is placed opposite and a layer of 20 ⁇ m PS film is inserted between them.
  • the roller temperature of the laminator is set to 170°C, and the hot pressing processing time is 0.5s.
  • the two films are heat-pressed by a laminator to achieve glue-free packaging, and the peeling force between the films after packaging is >2N.
  • CsPbBr 3 Mn 2+ quantum dot/PSF composite luminescent film coated on one side with green-yellow light emission (the mass percentage of quantum dots and polymer is 5wt%, and the thickness of the composite luminescent film is 100 ⁇ m) PVDC barrier film (the thickness of the barrier film is 1500 ⁇ m) and another SiO 2 barrier film (the thickness of the barrier film is 1500 ⁇ m), the side of the barrier film coated with nanocrystalline/polymer composite light-emitting film and the other barrier film Relatively placed. Then slowly pass through the laminator.
  • the roller temperature of the laminating machine is set to 90°C, and the hot pressing processing time is 10s.
  • the two films are hot-pressed by a laminator to achieve glue-free packaging, and the peeling force between the films after packaging is >6N.
  • MAPbBr 3 quantum dot/PAN composite luminescent film coated with green light on one side the mass percentage of quantum dots and polymer is 8wt%, and the thickness of the composite luminescent film is 90 ⁇ m
  • PVDC barrier film the thickness of the barrier film is 1200 ⁇ m
  • Al 2 O 3 barrier film the thickness of the barrier film is 1200 ⁇ m
  • the side of the barrier film coated with the nanocrystalline/polymer composite light-emitting film is placed opposite to the other barrier film. Then slowly pass through the laminator. Make three samples at the same time, set the roller temperature of the laminator to 120°C, 140°C, and 160°C respectively, and the hot pressing processing time is 10s.
  • the luminescence peaks of the film after the three-temperature thermocompression packaging are located at 525nm, 528nm and 528nm respectively (as shown in Figure 12).
  • the luminescence peaks of the film after the packaging compound show the requirements for the green light emission peak position, indicating that the thermocompression packaging will not affect Its application.
  • the luminescence peaks of the film after hot pressing at three temperatures are located at 630nm, 632nm and 633nm respectively (as shown in Figure 13).
  • the luminescence peaks of the film after encapsulation show the requirements for the red light emission peak position, indicating that the hot pressing package will not affect Its application.
  • the roller temperature of the laminator is set to 120°C, and the hot pressing processing time is 2s.
  • the two films are heat-pressed by a laminator to achieve glue-free packaging, and the peeling force between the films after packaging is >2N.
  • the film After packaging, the film has two luminescence peaks, green and red, located at 525nm and 628nm, respectively.
  • the roller temperature of the laminator is set to 120°C, and the hot pressing processing time is 2s.
  • the two films are heat-pressed by a laminator to achieve glue-free packaging, and the peeling force between the films after packaging is >2N. After encapsulation, the film has only one luminescence peak due to ion exchange.
  • the spectrum after passing through the liquid crystal screen is shown in FIG. 15, which basically meets the emission spectrum required for display.
  • the roller temperature of the laminator is set to 120°C, and the hot pressing processing time is 1s.
  • the two films are heat-pressed by a laminator to achieve glue-free packaging, and the peeling force between the films after packaging is >2N.
  • the film After packaging, the film has two luminescence peaks, green and red, located at 529nm and 625nm, respectively.
  • the packaged barrier film is placed in the blue backlight display module, the emission spectrum meets the emission spectrum required for display.
  • FIG. 16 is a schematic diagram of the structure of the side-lit backlight module provided by this embodiment, and this embodiment will be described below with reference to FIG. 16.
  • the packaged perovskite quantum dots/polymer composite film emitting dual light colors of red and green light is assembled into the display backlight module to form an edge-type backlight module.
  • the display backlight module also includes a light guide plate, reflectors and LED lamp beads.
  • the packaged perovskite quantum dot-based composite film layer is located on the upper surface of the light guide plate, and the reflector is located under the light guide plate. On the surface, the LED lamp bead is located on the side of the light guide plate.
  • FIG. 17 is a schematic diagram of the structure of the direct type backlight module provided by this embodiment, and this embodiment will be described below with reference to FIG. 17.
  • the display backlight module also includes a diffuser plate and LED lamp beads.
  • the packaged perovskite quantum dot-based composite film layer is located above the diffuser plate, and the LED lamp beads are located below the diffuser plate.
  • the encapsulated dual-light-emitting perovskite quantum dot/polymer composite film is applied to a direct-type backlight module.
  • the encapsulation film is located on the diffuser plate, and the LED lamp beads are located under the diffuser plate.
  • the composite light-emitting film in the embodiment is a quantum dot film.

Abstract

本申请公开了一种量子点膜的封装方法以及封装量子点膜。该封装方法包括将阻隔膜通过热压的方式封装在量子点膜的两侧，即可得到封装量子点膜；其中，所述量子点膜为含有量子点和聚合物的复合膜。该方法实现了无粘合剂封装，提高了量子点/聚合物复合薄膜的发光稳定性的同时降低了生产成本。

Description

量子点膜的封装方法以及封装量子点膜和应用 技术领域
本申请涉及一量子点膜的封装方法以及封装量子点膜和应用，属于显示技术领域。
背景技术
卤化铅基钙钛矿纳米晶(又称钙钛矿量子点)材料作为“量子点家族”中的新成员，具有溶液法制备、颜色可调、量子产率高等突出特点，有潜力成为新一代显示材料应用于发光二极管光、激光、光学检测和生物标记等领域。相比于研究的比较成熟的II-VI族化合物量子点(以CdSe为代表)，钙钛矿纳米晶的波长调节范围更广、成本更低，并且由于是新材料，使我国更有希望突破国外技术壁垒，掌握显示领域的科技制高点。此外，由于II-VI族化合物量子点中含有Cd元素，使其在日常生活中的应用收到了限制，目前欧盟已经决定从2019年起禁止出售含有Cd的电视。因此发展更加环保的无Cd量子点进行实际应用显得非常急迫。而钙钛矿纳米晶是II-VI族化合物量子点的潜在替代材料。
目前有机无机杂化钙钛矿纳米晶在应用中存在的最大的问题是其结构的不稳定性。氧气和水、紫外光、制备过程中的溶剂以及高温等都会使其发生分解。有机无机杂化钙钛矿纳米晶的分解过程如下：
Figure PCTCN2020076580-appb-000001
Figure PCTCN2020076580-appb-000002
Figure PCTCN2020076580-appb-000003
Figure PCTCN2020076580-appb-000004
由分解过程可以看出，当有机无机杂化钙钛矿纳米晶经过第一步分解后其产物CH 3NH 3I还会继续分解，并在第三步中生成H 2O。CH 3NH 3I的进一步分解以及H 2O的生成又会促进有机无机杂化钙钛矿纳米晶的分解，因此有机无机钙钛矿纳米晶的稳定性差。为了提高钙钛矿纳米晶的稳定性，人们将CH 3NH 3 +离子替换为Cs +离子。由于CsPbX 3分解后生成的CsX不会发生进一步的分解，因此全无机钙钛矿纳米晶的稳定性相对于有机无机杂化钙钛矿纳米晶有了明显的提高。但是由于钙钛矿纳米晶的离子晶体特性，即使将CH 3NH 3 +离子替换为Cs +离子，其本身的结构稳定性仍然不能满足实际应用需求，必须将钙钛矿纳米晶封装后隔绝水、氧才能用于日常使用。封装后钙钛矿纳米晶薄膜是两侧为阻隔膜，中间为钙钛矿纳米晶膜的三明治结构。传统的封装方法为将钙钛矿量子点涂布到一层阻隔膜上，再用粘合剂将另一层阻隔膜与钙钛矿纳米晶层粘贴。该方法存在的问题是粘合剂与钙钛矿纳米晶具有反应活性，在使用的过程中粘合剂会破坏钙钛矿纳米晶，从而使薄膜的发光性能下降。开发钙钛矿纳米晶薄膜封装的粘合剂需要大量的工作，并且使用粘合剂也会增加最终产品的成本。
发明内容
根据本申请的一个方面，提供了一种量子点膜的封装方法，该封装方法能够显著提高量子点薄膜的稳定性并且降低产品成本。
一种量子点膜的封装方法，将阻隔膜通过热压的方式封装在量子点膜的两侧，即可得到封装量子点膜；
其中，所述量子点膜为含有量子点和聚合物的复合膜。
具体地，本申请提供了一种量子点/聚合物复合薄膜的封装方法，封装方法将阻隔膜通过热压的方式封装在所述量子点薄膜的两侧，即可得到封装的量子点/聚合物复合薄膜。
可选地，所述封装方法包括将膜层A与膜层B通过热压的方式完成封装；
所述膜层A中含有量子点膜Ⅰ和第一阻隔膜，所述量子点膜Ⅰ附着在所述第一阻隔膜上；
所述膜层B中包括第二阻隔膜；
所述量子点膜Ⅰ位于所述第一阻隔膜和所述第二阻隔膜之间。
在第一种可能的方式中，所述膜层B为所述第二阻隔膜。
在第二种可能的方式中，所述膜层B还包括量子点膜Ⅱ，所述量子点膜Ⅱ附着在所述第二阻隔膜上；所述量子点膜Ⅰ与所述量子点膜Ⅱ相对放置。
在第三种可能的方式中，所述膜层B还包括无机荧光粉膜，所述无机荧光粉膜附着在所述第二阻隔膜上；所述量子点膜Ⅰ与无机荧光粉膜相对放置。
具体地，将一张单侧附着有量子点薄膜的阻隔膜(即膜层A)中具有量子点薄膜的一侧与另一张阻隔膜(即膜层B)相对放置，或将两张单侧附着有量子点薄膜的阻隔膜(即膜层A和膜层B)中具有量子点的一侧相对放置，或将一张单侧附着有量子点薄膜的阻隔膜(即膜层A)中具有量子点的一侧与一张单侧附着有无机荧光粉薄膜的阻隔膜(即膜层B)中具有荧光粉的一侧相对放置，通过热压完成封装。其中，两张单侧附着有量子点薄膜的阻隔膜中的量子点薄膜可以为不同组分。
可选地，所述无机荧光粉膜包括无机荧光粉和聚合物，所述无机荧光粉嵌入所述聚合物中；
所述无机荧光粉与所述聚合物中的质量百分比为1～20wt％。
具体地，无机荧光粉与聚合物中的质量百分比的上限独立选自2wt％、10wt％、15wt％、20wt％；无机荧光粉与聚合物中的质量百分比的下限独立选1wt％、2wt％、10wt％、15wt％。
可选地，所述无机荧光粉的颗粒尺寸不大于200μm。
具体地，无机荧光粉的颗粒尺寸的上限选自100μm、150μm、200μm；无机荧光粉的颗粒尺寸的下限选自10μm、100μm、150μm。
可选地，所述无机荧光粉膜的厚度为5～200μm。
具体地，无机荧光粉膜的厚度的上限独立选自50μm、100μm、150μm、200μm；无机荧光粉膜的厚度的下限独立选自5μm、50μm、100μm、150μm。
可选地，在所述量子点膜中，所述量子点嵌入所述聚合物中；
所述量子点与所述聚合物的质量百分比为1～20wt％。
具体地，具体地，量子点与聚合物中的质量百分比的上限独立选自2wt％、4wt％、5wt％、6wt％、8wt％、10wt％、12wt％、14wt％、15wt％、16wt％、20wt％；量子点与聚合物中的质量百分比的下限独立选1wt％、2wt％、4wt％、5wt％、6wt％、8wt％、10wt％、12wt％、14wt％、15wt％、16wt％。
可选地，所述量子点膜的厚度为0.1～100μm。
具体地，量子点膜的厚度的上限选自0.5μm、1μm、5μm、10μm、20μm、30μm、50μm、70μm、80μm、90μm、100μm；量子点膜的厚度的下限选自0.1μm、0.5μm、1μm、5μm、10μm、20μm、30μm、50μm、70μm、80μm、90μm。
可选地，所述量子点膜中的聚合物或无机荧光粉膜中的聚合物独立地选自聚偏氟乙烯(PVDF)、聚偏氟乙烯和三氟乙烯共聚物(P(VDF-TrFE))、聚丙烯腈(PAN)、聚醋酸乙烯酯(PVAc)、醋酸纤维素(CA)、氰基纤维素(CNEC)、聚砜(PSF)、芳香聚酰胺(MPIA)、聚酰亚胺(PI)、聚碳酸酯(PC)、聚苯乙烯(PS)、聚甲基丙烯酸甲酯(PMMA)、聚乙烯(PE)、聚丙烯(PP)、乙烯-醋酸乙烯共聚物(EVA)中的至少一种。
可选地，所述阻隔膜包括聚偏二氯乙烯膜(PVDC)、乙烯-乙烯醇共聚物膜(EVOH)、间二甲基胺和已二酸缩聚物膜(尼龙)、氧化物镀覆膜中的至少一种。
优选地，所述氧化物包括Si 3O 4、Si 2O 3、SiO 2、Al 2O 3中的至少一种。
可选地，所述阻隔膜的厚度为5-1500μm。
具体地，阻隔膜的厚度的上限选自10μm、15μm、50μm、100μm、200μm、500μm、700μm、800μm、1000μm、1200μm、1400μm、1500μm；阻隔膜的厚度的下限选自5μm、10μm、15μm、50μm、100μm、200μm、500μm、700μm、800μm、1000μm、1200μm、1400μm。
可选地，所述热压的条件为：热压温度40℃～180℃；热压时间0.01～40s。
可选地，所述热压的温度的上限选自50℃，60℃，70℃，80℃，90℃、100℃、110℃、120℃、130℃、140℃、150℃、160℃、170℃或180℃；下限选自40℃，50℃，60℃，70℃，80℃、90℃、100℃、110℃、120℃、130℃、140℃、150℃、160℃或170℃。
可选地，所述热压时间的上限选自0.05s，0.5s，1s，2s，3s，5s，8s，10s，15s，20s，25s，30s，35s或40s；下限选自0.01s，0.05s，0.5s，1s，2s，3s，5s，8s，10s，15s，20s，25s，30s或35s。
可选地，所述封装方法包括方法一、方法二或者方法三中的任一种；
方法一包括：将一张单侧附着有量子点膜Ⅰ的第一阻隔膜与另一张第二阻隔膜相对放置，所述量子点膜Ⅰ朝向所述第二阻隔膜，通过热压的方式完成封装；
方法二包括：将一张单侧附着有量子点膜Ⅰ的第一阻隔膜与另一张单侧附着有量子点膜Ⅱ的第二阻隔膜相对放置，所述量子点膜Ⅰ和量子点膜Ⅱ相对，通过热压的方式完成封装；
方法三包括：将一张单侧附着有量子点膜Ⅰ的第一阻隔膜与另一张单侧附着有无机荧光粉膜的第二阻隔膜相对放置，所述量子点膜Ⅰ与无机荧光粉膜相对，通过热压的方式完成封装。
可选地，所述方法二包括，将所述量子点膜Ⅰ与量子点膜Ⅱ之间加入聚合物膜层，通过热压的方式完成封装；
所述方法三包括：将所述量子点膜Ⅰ和无机荧光粉膜之间加入聚合物膜层，通过热压的方式完成封装。
可选地，所述聚合物膜层包括聚偏氟乙烯(PVDF)、聚偏氟乙烯和三氟乙烯共聚物(P(VDF-TrFE))、聚丙烯腈(PAN)、聚醋酸乙烯酯(PVAc)、醋酸纤维素(CA)、氰基纤维素(CNEC)、聚砜(PSF)、芳香聚酰胺(MPIA)、聚酰亚胺(PI)、聚碳酸酯(PC)、聚苯乙烯(PS)、聚甲基丙烯酸甲酯(PMMA)、聚乙烯(PE)、聚丙烯(PP)、乙烯-醋酸乙烯共聚物(EVA)中的至少一种。
可选地，所述聚合物膜层的厚度为5-100μm。
具体地，聚合物膜层的厚度的上限选自10μm、15μm、20μm、25μm、50μm、70μm、100μm；聚合物膜层的厚度的下限选自5μm、10μm、15μm、20μm、25μm、50μm、70μm。
本申请中的量子点可以为现有技术中任意合适的量子点，本申请不做具体的限定，下面结构一些可能的量子点。
可选地，所述量子点选自钙钛矿型量子点、II-VI族系列量子点、InP系列量子点或者CuInS 2系列量子点中的任一种。
可选地，所述钙钛矿型量子点选自具有结构通式ABX 3、结构通式A 3B 2X 9、结构通式A 2BX 6或结构通式(RNH 3) 2A m-1B mX 3m+1中的化合物中的任一种；
其中，A位为一价金属阳离子或者一价有机阳离子，B位为二价或者三价金属阳离子，X为卤素阴离子，R代表烷基或者芳香基团，m代表有机链之间的金属阳离子层数，m的取值范围为1～100；
优选地，A选自CH 3NH 3 +、CH(NH)NH 3 +、Cs +、Rb +、C 6H 5CH 2NH 3 +、C 6H 5(CH 2) 2NH 3 +中的至少一种；
B选自Pb 2+、Cu 2+、Sb 3+、Bi 3+、In 3+、Al 3+、Sn 2+、Cd 2+、Zn 2+中的至少一种。
可选地，所述II-VI族系列量子点包括II-VI族量子点、II-VI族掺杂量子点、II-VI族核壳结构量子点中的任一种；
所述II-VI族量子点包括具有结构通式A’B’的化合物中的任一种
其中，A’选自Cd、Zn、Cu、Pb、Mn、Sn中的一种或者两种；
B’选自S、Se、Te中的至少一种；
所述II-VI族掺杂量子点中含有掺杂元素，所述掺杂元素包括Cu、Ag、Mn、Al中的至少一种；
所述II-VI族核壳结构量子点中，内核为II-VI族量子点，外壳为II-VI族化合物成分。
可选地，所述InP系列量子点包括InP量子点、InP掺杂量子点、InP核壳结构量子点中的任一种；
所述InP掺杂量子点中含有掺杂元素，所述掺杂元素包括Cd、Zn、Cu、Ag、Mn、Al中的至少一种；
所述InP核壳结构量子点中，内核为InP量子点、外壳为II-VI族化合物成分。
可选地，所述CuInS 2系列量子点包括CuInS 2量子点、CuInS 2掺杂量子点中的任一种；
所述CuInS 2掺杂量子中含有掺杂元素，所述掺杂元素包括Cd、Zn、Ag、Mn、Al中的至少一种。
根据本申请的另一方面，还提供了一种封装量子点膜，所述封装量子点膜包括量子点膜和阻隔膜，所述量子点膜夹设在所述阻隔膜之间；
所述封装量子点膜采用上述中任一项所述的封装方法制备得到。
可选地，所述封装量子点膜包括膜层A、膜层B；
所述膜层A中由上至下依次包括第一阻隔膜和量子点膜Ⅰ；
所述膜层B中含有第二阻隔膜，所述膜层B位于所述量子点膜Ⅰ的下方。
可选地，所述封装量子点膜包括结构Ⅰ、结构Ⅱ或结构Ⅲ中的任一种；
结构Ⅰ：所述封装量子点膜由上至下依次包括第一阻隔膜、量子点膜Ⅰ、第二阻隔膜；
结构Ⅱ：所述封装量子点膜由上至下依次包括第一阻隔膜、量子点膜Ⅰ、量子点膜Ⅱ、第二阻隔膜；
结构Ⅲ：所述封装量子点膜由上至下依次包括第一阻隔膜、量子点膜Ⅰ、无机荧光粉膜、第二阻隔膜。
可选地，在所述结构Ⅱ中，所述量子点膜Ⅰ和量子点膜Ⅱ中含有相同的量子点或者含有不同的量子点。
可选地，所述封装量子点膜还包括聚合物膜层；所述聚合物膜层位于所述膜层A和膜层B之间。
可选地，所述封装量子点膜包括结构Ⅳ或结构Ⅴ；
结构Ⅳ：所述封装量子点膜由上至下依次包括第一阻隔膜、量子点膜Ⅰ、聚合物膜层、量子点膜Ⅱ、第二阻隔膜；
结构Ⅴ：所述封装量子点膜由上至下依次包括第一阻隔膜、量子点膜Ⅰ、聚合物膜层、无机荧光粉膜、第二阻隔膜。
根据本申请的又一方面，还提供了上述任一项所述的封装方法制备得到的封装量子点膜或上述任一项所述的封装量子点膜在显示背光模组领域、滤光薄膜领域中的应用。
本申请能产生的有益效果包括：
1)本发明使用热压法封装钙钛矿量子点/聚合物的复合薄膜，实现了无粘合剂封装，提高了钙钛矿量子点/聚合物复合薄膜的发光稳定性的同时降低了生产成本。此外，该封装方法也可以应用于其他量子点的封装，例如CdSe系列量子点、InP系列量子点，CuInS 2系列量子点。封装后的量子点/聚合物复合薄膜应用于显示背光模组中，提高显示色域、对比度和亮度。
2)本申请所提供的使用热压对量子点/聚合物复合薄膜进行封装的方法，可以有效增强最终产品的稳定性。
3)本申请所提供的使用热压对量子点/聚合物复合薄膜进行封装的方法，实现无胶贴合，降低工艺复杂度和原料种类，有效降低了产品成本。
4)该封装方法可以使红、绿量子点分层封装，避免光的重吸收，提高了发光效率。
附图说明
图1为本申请一种实施方式中量子点膜的结构示意图。钙钛矿量子点均匀分布在聚合物基质材料中。
图2为本申请一种实施方式中无插层聚合物热压封装量子点膜过程示意图，该图中纳米晶膜即为量子点膜。
图3为本申请一种实施方式中红光钙钛矿量子点/聚合物薄膜层与绿光钙钛矿量子点/聚合物薄膜层间无插层聚合物热压封装量子点/聚合物复合薄膜封装后结构示意图。
图4为本申请一种实施方式中有插层聚合物热压封装量子点膜过程示意图。
图5为本申请一种实施方式中红光钙钛矿量子点/聚合物薄膜层与绿光钙钛矿量子点/聚合物薄膜层间有插层聚合物热压封装量子点/聚合物复合薄膜封装后结构示意图。
图6为本申请一种实施方式中钙钛矿量子点/聚合物薄膜层与CdSe量子点/聚合物薄膜层间有插层聚合物热压封装量子点/聚合物复合薄膜封装后结构示意图。
图7为本申请一种实施方式中钙钛矿量子点/聚合物薄膜层与InP量子点/聚合物薄膜层间有插层聚合物热压封装量子点/聚合物复合薄膜封装后结构示意图。
图8为本申请一种实施方式中CdSe量子点/聚合物薄膜层与CdSe量子点/聚合物薄膜层间有插层聚合物热压封装量子点/聚合物复合薄膜封装后结构示意图。
图9为本申请一种实施方式中InP量子点/聚合物薄膜层与InP量子点/聚合物薄膜层间有插层聚 合物热压封装量子点/聚合物复合薄膜封装后结构示意图。
图10为本申请一种实施方式中CdSe量子点/聚合物薄膜层与InP量子点/聚合物薄膜层间有插层聚合物热压封装量子点/聚合物复合薄膜封装后结构示意图。
图11为本申请一种实施方式中钙钛矿量子点/聚合物薄膜层与荧光粉/聚合物复合薄膜层间无插层聚合物热压封装量子点/聚合物复合薄膜封装后结构示意图。
图12为本申请一种实施方式中绿光钙钛矿量子点/聚合物复合薄膜不同温度热压封装后光谱变化图。
图13为本申请一种实施方式中红光钙钛矿量子点/聚合物复合薄膜不同温度热压封装后光谱变化图。
图14为本申请一种实施方式中热压封装后薄膜的白光发射的光谱图。
图15为本申请一种实施方式中两种不同成分的钙钛矿量子点膜之间无隔离层热压封装后薄膜的发射光谱图。
图16为本申请一种实施方式中封装后红光和绿光双光色发射的量子点/聚合物复合薄膜应用于侧入式背光模组的结构示意图。
图17为本申请一种实施方式中封装后红光和绿光双光色发射的量子点/聚合物复合薄膜应用于直下式背光模组的结构示意图。
具体实施方式
下面结合实施例详述本申请，但本申请并不局限于这些实施例。
如无特别说明，本申请的实施例中的原料均通过商业途径购买。
在本发明的一个方面，本发明提出了一种量子点/聚合物薄膜的封装方法，所述封装方法包括将阻隔膜通过热压的方式封装在所述量子点薄膜的两侧，即可得到封装的量子点/聚合物复合薄膜。
根据本发明的实施例，将两张单侧附着有量子点薄膜的阻隔膜中具有量子点的一侧相对放置(参考图2)；或将一张单侧附着有量子点薄膜的阻隔膜中具有量子点薄膜的一侧与另一张阻隔膜相对放置；或将一张单侧附着有量子点薄膜的阻隔膜中具有量子点的一侧与另一张单侧附着有无机荧光粉薄膜的阻隔膜中具有荧光粉的一侧相对放置；通过热压完成封装。其中，两张单侧附着有量子点薄膜的阻隔膜中的量子点薄膜可以为不同组分，例如图5，阻隔膜的一侧附着有绿光钙钛矿量子点，另一张阻隔膜的一侧附着有红光钙钛矿量子点。参考图11，阻隔膜的一侧附着有钙钛矿量子点，另一张阻隔膜的一侧附着有荧光粉。
根据本发明的实施例，所述封装方法中量子点薄膜为将量子点材料嵌入到聚合物基质形成的复合薄膜材料，参考图1，量子点材料在聚合物基质中的质量百分比为1-20％；量子点薄膜的厚度为0.1-100μm。
根据本发明的实施例，量子点薄膜中的量子点为II-VI族系列量子点材料，包括CdS，CdSe，CdTe、ZnS、ZnSe、ZnTe和它们的合金量子点材料例如CdZnS、CdZnSe、CdZnTe，以及Cu、Ag、Mn、Al等元素离子的掺杂量子点材料，以及核壳结构量子点；
或为InP系列量子点材料，包括Cd、Zn、Cu、Ag等元素离子的掺杂量子点，以及核壳结构量子点；
或为CuInS 2系列量子点材料，包括Cd、Zn、Ag等元素离子的掺杂量子点，以及核壳结构量子点。
或为钙钛矿结构的纳米材料，所述钙钛矿结构的纳米材料的结构通式为ABX 3、A 3B 2X 9、A 2BX 6或(RNH 3) 2A m-1B mX 3m+1，其中A位为一价金属阳离子或者一价有机阳离子，B位为二价或者三价金属阳离子，X为卤素阴离子，R代表烷基或者芳香基团，m代表有机链之间的金属阳离子层数。
更优选地，A选自CH 3NH 3 +、CH(NH)NH 3 +、Cs +中的至少一种；B选自Pb 2+、Cu 2+、Ag +、Sb 3+、Bi 3+、In 3+、Al 3+中的至少一种。
可选地，(RNH 3) 2A m-1B mX 3m+1可以为(PMA) 2PbI 4(PMA＝C 6H 5CH 2NH 3 +)、PEA 2SnI 4(PEA＝苯乙胺)、(C 4H 9NH 3) 2(CH 3NH 3)Pb 2I 7、(C 6H 5C 2H 4NH 3) 2(CH 3NH 3) 2Pb 3I 10。
根据本发明的实施例，所述封装方法中用于嵌入量子点的聚合物基质为聚偏氟乙烯(PVDF)、聚偏氟乙烯和三氟乙烯共聚物(P(VDF-TrFE))、聚丙烯腈(PAN)、聚醋酸乙烯酯(PVAc)、醋酸纤维素(CA)、氰基纤维素(CNEC)、聚砜(PSF)、芳香聚酰胺(MPIA)、聚酰亚胺(PI)、聚碳酸酯(PC)、聚苯乙烯(PS)、聚甲基丙烯酸甲酯(PMMA)、聚乙烯(PE)、聚丙烯(PP)、乙烯-醋酸乙烯共聚物(EVA)中的至少一种。
根据本发明的实施例，在两张单侧附着有量子点的阻隔膜中间，或一张单侧附着有量子点的阻隔膜与另一张单侧附着有无机荧光粉膜的阻隔膜中间插入附加聚合物膜层，参考图4，所述附加聚合物膜层的厚度为5-100μm。
根据本发明的实施例，无机荧光粉薄膜为将无机荧光粉材料嵌入到聚合物基质形成的复合薄膜材料，无机荧光粉材料在聚合物基质中的质量百分比为1-20％；无机荧光粉薄膜的厚度为5-200μm。选用的无机荧光材料的颗粒尺寸不大于200μm，以保证制备得到的单侧附着有荧光粉薄膜的阻隔膜具有优异的光学性质。
根据本发明的实施例，无机荧光粉的组分可以为：YAG:Ce 3+黄粉，KSF:Mn 4+红粉，α-SiAlON:Eu 2+，β-SiAlON:Eu 2+。
根据本发明的实施例，插入的附加聚合物膜层为聚偏氟乙烯(PVDF)、聚偏氟乙烯和三氟乙烯共聚物(P(VDF-TrFE))、聚丙烯腈(PAN)、聚醋酸乙烯酯(PVAc)、醋酸纤维素(CA)、氰基纤维素(CNEC)、聚砜(PSF)、芳香聚酰胺(MPIA)、聚酰亚胺(PI)、聚碳酸酯(PC)、聚苯乙烯(PS)、聚甲基丙烯酸甲酯(PMMA)、聚乙烯(PE)、聚丙烯(PP)、乙烯-醋酸乙烯共聚物(EVA)中的至少一种。插入的聚合物功能膜层可以起到隔离、缓冲、增强稳定性等作用。防止两张阻隔膜上的不同的量子点或量子点与荧光粉颗粒在热压过冲发生化学反应变化，例如红色钙钛矿量子点与绿色钙钛矿量子点相遇热压后红色和绿色量子点的发光效率都会降低。
根据本发明的实施例，所述阻隔膜为聚偏二氯乙烯薄膜、乙烯-乙烯醇共聚物薄膜、间二甲基胺和已二酸缩聚物薄膜、氧化物镀覆薄膜中的至少一种。
根据本发明的实施例，所述热压的条件为：热压温度40℃～180℃；热压时间0.01s～40s。热压温度的调节主要是根据所选聚合物基质的熔点和软化温度进行选择，热压温度位于聚合物的软化温度与熔点之间，不能高于熔点。此外，对热压温度的微调也可以对最终热压得到的量子点薄膜发光波长进行微调，参考图12。
所述热压的温度的上限选自50℃，60℃，70℃，80℃，90℃、100℃、110℃、120℃、130℃、140℃、150℃、160℃、170℃或180℃；下限选自40℃，50℃，60℃，70℃，80℃、90℃、100℃、110℃、120℃、130℃、140℃、150℃、160℃或170℃。
所述热压时间的上限选自0.05s，1s，3s，5s，10s，20s，30s或40s；下限选自0.01s，0.05s，1s，3s，5s，10s，20s或30s。热压时间的选择根据受前面所选聚合物基质的热压温度有关，热压温度位于软化温度与熔点之间，温度越靠近熔点，则热压的时间相对短，热压温度靠近软化温度，则热压时间可以加长。通过选择合适的热压温度与热压时间，从而更好地实现热压封装，保证热压封装的薄膜的剥离力满足要求，也可以减少量子点受到的热淬灭影响。
本申请中，封装后膜之间的剥离力的测试仪器为科泰仪器KT-PSA-1056A；
封装后薄膜的发光性能测试采用爱丁堡FLSP920荧光光谱仪。
实施例1
取两张一侧涂覆有CH 3NH 3PbBr 3(MAPbBr 3)纳米晶/PVDF复合发光膜(该复合发光膜即为量子点膜，量子点与聚合物的质量百分比为1wt％，复合发光膜的厚度为100μm)的EVOH阻隔膜，阻隔膜厚度为5μm，(钙钛矿纳米晶/聚合物复合膜结构示于图1)，将这两张阻隔膜涂覆有MAPbBr 3纳米晶/PVDF复合发光膜的一侧相对放置，随后缓慢通过覆膜机(如图2所示)。覆膜机滚子温度设置为160℃，热压加工时间5s。该两张膜通过覆膜机热压后实现无胶封装，封装后膜之间的剥离力>5N。热压封装后薄膜的发光峰位于524nm，半峰宽28nm，适用于背光显示。
CH 3NH 3PbBr 3(MAPbBr 3)纳米晶/PVDF复合发光膜的涂膜方法参考下述文献资料：(1)中国专 利：CN201611039717.2，一种钙钛矿量子点/聚合物复合荧光膜的制备方法；(2)文献Advanced Materials,2016,28(41):9163-9168。相应的，本发明中涉及到的基于不同组分的钙钛矿量子点复合发光膜的制备方法均参考上述文献资料。
实施例2
取一张一侧涂覆有CH(NH 2) 2PbBr 3(FAPbBr 3)纳米晶/PE复合发光膜(该复合发光膜即为量子点膜，量子点与聚合物的质量百分比为20wt％，复合发光膜的厚度为0.1μm)的尼龙阻隔膜(阻隔膜厚度为1500μm)和另一张尼龙阻隔膜(阻隔膜厚度为1500μm)，将阻隔膜涂覆有MAPbBr 3纳米晶/PE复合发光膜的一侧与另一张阻隔膜相对放置，随后缓慢通过覆膜机。覆膜机滚子温度设置为80℃，热压加工时间15s。该两张膜通过覆膜机热压后实现无胶封装，封装后膜之间的剥离力>3N。
实施例3
取一张一侧涂覆有绿光MAPbBr 3量子点/EVA复合发光膜(量子点与聚合物的质量百分比为10wt％，复合发光膜的厚度为20μm)的SiO 2阻隔膜(阻隔膜厚度为1000μm)和另一张一侧涂覆有红光CsPbI 3/RbPbI 3纳米晶/EVA复合发光膜(量子点与聚合物的质量百分比为15wt％，复合发光膜的厚度为20μm)的SiO 2阻隔膜(阻隔膜厚度为1000μm)。随后缓慢通过覆膜机。覆膜机滚子温度设置为40℃，热压加工时间10s。该两张膜通过覆膜机热压后实现无胶封装，封装后膜之间的剥离力>10N(封装后结构如图3所示)。
实施例4
取一张一侧涂覆有绿光CsPbBr 3量子点/EVA复合发光膜(量子点与聚合物的质量百分比为14wt％，复合发光膜的厚度为50μm)的PVDC阻隔膜(阻隔膜厚度为800μm)和另一张一侧涂覆有红光MAPbBr 2I纳米晶/PMMA复合发光膜(该复合发光膜即为量子点膜，量子点与聚合物的质量百分比为10wt％，复合发光膜的厚度为50μm)的PVDC阻隔膜(阻隔膜厚度为700μm)，将阻隔膜涂覆有纳米晶/聚合物复合发光膜的一侧相对放置并在它们之间插入一层10μm的PVDC薄膜(如图4示意图所示)。随后缓慢通过覆膜机。覆膜机滚子温度设置为120℃，热压加工时间2s。该两张膜通过覆膜机热压后实现无胶封装，封装后膜之间的剥离力>3N(封装后结构如图5所示)。
实施例5
取一张一侧涂覆有绿光CsPbBr 3量子点/PI复合发光膜(量子点与聚合物的质量百分比为16wt％，复合发光膜的厚度为70μm)的PVDC阻隔膜(阻隔膜厚度为50μm)和另一张一侧涂覆有红光CdSe量子点/PC复合发光膜(量子点与聚合物的质量百分比为14wt％，复合发光膜的厚度为50μm)的Al 2O 3阻隔膜(阻隔膜厚度为50μm)，将阻隔膜涂覆有纳米晶/聚合物复合发光膜的一侧相对放置并在它们之间插入一层5μm的P(CDF-TrFE)薄膜。随后缓慢通过覆膜机。覆膜机滚子温度设置为180℃，热压加工时间30s。该两张膜通过覆膜机热压后实现无胶封装，封装后膜之间的剥离力>7N(封装后结构如图6所示)。
本发明中，红光CdSe量子点/PC复合发光膜的涂覆参考现有的方法：将0.04gCdSe量子点、3gPC基质材料、17g氯仿溶剂混合在一起形成均匀的溶液，将溶液涂覆在Al 2O 3阻隔膜表面，通过干燥即可获得单面涂覆有红光CdSe量子点的阻隔膜。相应的，本发明中其它实施例中涉及到的InP量子点、CuInS 2量子点、无机荧光粉的复合薄膜的涂覆采用相同或相近的办法。不同之处在于更换了溶剂种类、聚合物基质种类，以及添加一些必要的添加剂组分。
实施例6
取一张一侧涂覆有绿光CsPbBr 2.9I 0.1量子点/PVAc复合发光膜(量子点与聚合物的质量百分比为5wt％，复合发光膜的厚度为80μm)的PVDC阻隔膜(阻隔膜厚度为100μm)和另一张一侧涂覆有红光InP量子点/EVA复合发光膜的尼龙阻隔膜(阻隔膜厚度为100μm)，将阻隔膜涂覆有纳米晶/聚 合物复合发光膜的一侧相对放置并在它们之间插入一层15μm的PC薄膜。随后缓慢通过覆膜机。覆膜机滚子温度设置为120℃，热压加工时间0.01s。该两张膜通过覆膜机热压后实现无胶封装，封装后膜之间的剥离力>2N(封装后结构如图7所示)。
本实施例中，InP量子点/EVA复合发光膜的涂覆方法：将0.01g InP量子点、2g EVA基质材料、12g氯仿溶剂混合在一起形成均匀的溶液，将溶液涂覆在尼龙阻隔膜表面，通过干燥即可获得单面涂覆有红光InP量子点的阻隔膜。
实施例7
取一张一侧涂覆有绿光CdSe量子点/PAN复合发光膜(量子点与聚合物的质量百分比为2wt％，复合发光膜的厚度为90μm)的EVOH阻隔膜(阻隔膜厚度为1400μm)和另一张一侧涂覆有红光CdSe量子点/PSF复合发光膜(量子点与聚合物的质量百分比为3wt％，复合发光膜的厚度为90μm)的EVOH阻隔膜(阻隔膜厚度为1400μm)，将阻隔膜涂覆有纳米晶/聚合物复合发光膜的一侧相对放置并在它们之间插入一层20μm的PVDF薄膜。随后缓慢通过覆膜机。覆膜机滚子温度设置为180℃，热压加工时间8s。该两张膜通过覆膜机热压后实现无胶封装，封装后膜之间的剥离力>3N(封装后结构如图8所示)。
本实施例不同粒径的CdSe发不同颜色的光。
实施例8
取一张一侧涂覆有绿光InP量子点/PMMA复合发光膜(量子点与聚合物的质量百分比为1wt％，复合发光膜的厚度为0.5μm)的SiO 2阻隔膜(阻隔膜厚度为15μm)和另一张一侧涂覆有红光InP量子点/PC复合发光膜(量子点与聚合物的质量百分比为1wt％，复合发光膜的厚度为0.5μm)的Al 2O 3阻隔膜(阻隔膜厚度为15μm)，将阻隔膜涂覆有纳米晶/聚合物复合发光膜的一侧相对放置并在它们之间插入一层25μm的PS薄膜。随后缓慢通过覆膜机。覆膜机滚子温度设置为150℃，热压加工时间40s。该两张膜通过覆膜机热压后实现无胶封装，封装后膜之间的剥离力>9N(封装后结构如图9所示)。
实施例9
取一张一侧涂覆有绿光CdSe量子点/PS复合发光膜(量子点与聚合物的质量百分比为4wt％，复合发光膜的厚度为0.5μm)的PVDC阻隔膜(阻隔膜厚度为200μm)和另一张一侧涂覆有红光InP量子点/CNEC复合发光膜(量子点与聚合物的质量百分比为6wt％，复合发光膜的厚度为0.5μm)的PVDC阻隔膜(阻隔膜厚度为200μm)，将阻隔膜涂覆有纳米晶/聚合物复合发光膜的一侧相对放置并在它们之间插入一层10μm的EVA薄膜。随后缓慢通过覆膜机。覆膜机滚子温度设置为100℃，热压加工时间35s。该两张膜通过覆膜机热压后实现无胶封装，封装后膜之间的剥离力>11N(封装后结构如图10所示)。
实施例10
取一张一侧涂覆有青光MAPbBr 2.9Cl 0.1量子点/PP复合发光膜(量子点与聚合物的质量百分比为8wt％，复合发光膜的厚度为5μm)的EVOH阻隔膜(阻隔膜厚度为10μm)和另一张一侧涂覆有黄光YAG:Ce 3+荧光粉/PE复合发光膜(该复合发光膜为无机荧光粉膜，荧光粉与聚合物的质量百分比为1wt％，无机荧光粉膜的厚度为5μm，荧光粉的颗粒尺寸为50～200μm)的EVOH阻隔膜(阻隔膜厚度为10μm)，将阻隔膜涂覆有纳米晶/聚合物复合发光膜和荧光粉/聚合物复合发光膜的一侧相对放置并在它们之间插入一层10μm的PVDC薄膜。随后缓慢通过覆膜机。覆膜机滚子温度设置为120℃，热压加工时间25s。该两张膜通过覆膜机热压后实现无胶封装，封装后膜之间的剥离力>4.5N(封装后结构如图11所示)。
本实施例中，黄光YAG:Ce 3+荧光粉/PE复合发光膜的涂覆方法：将1g YAG:Ce 3+荧光粉、3g PE基质材料、10g氯仿溶剂混合在一起形成均匀的溶液，将溶液涂覆在EVOH阻隔膜表面，通过干燥 即可获得单面涂覆有黄光YAG:Ce 3+荧光粉的阻隔膜。
实施例11
取一张一侧涂覆有绿光MAPbBr 3量子点/PS复合发光膜(量子点与聚合物的质量百分比为5wt％，复合发光膜的厚度为10μm)的尼龙阻隔膜(阻隔膜厚度为100μm)和另一张一侧涂覆有红光KSF:Mn 4+荧光粉/EVA复合发光膜(荧光粉与聚合物的质量百分比为20wt％，无机荧光粉膜的厚度为200μm，荧光粉的颗粒尺寸为10～150μm)的尼龙阻隔膜(阻隔膜厚度为100μm)，将阻隔膜涂覆有纳米晶/聚合物复合发光膜和荧光粉/聚合物复合发光膜的一侧相对放置并在它们之间插入一层20μm的PMMA薄膜。随后缓慢通过覆膜机。覆膜机滚子温度设置为100℃，热压加工时间5s。该两张膜通过覆膜机热压后实现无胶封装，封装后膜之间的剥离力>5N。
实施例12
取一张一侧涂覆有白光Cs 2AgInCl 6:Bi 3+量子点/PAN复合发光膜(量子点与聚合物的质量百分比为10wt％，复合发光膜的厚度为30μm)的SiO 2阻隔膜(阻隔膜厚度为80μm)和另一张SiO 2阻隔膜(阻隔膜厚度为80μm)，将阻隔膜涂覆有纳米晶/聚合物复合发光膜的一侧与另一张阻隔膜相对放置。随后缓慢通过覆膜机。覆膜机滚子温度设置为170℃，热压加工时间25s。该两张膜通过覆膜机热压后实现无胶封装，封装后膜之间的剥离力>7N。
实施例13
取一张一侧涂覆有青光CsPbBr 2.9Cl 0.1量子点/PVDC复合发光膜(量子点与聚合物的质量百分比为10wt％，复合发光膜的厚度为20μm)的Al 2O 3阻隔膜(阻隔膜厚度为1100μm)和另一张一侧涂覆有黄光Cs 2AgBiBr 6/PVDC复合发光膜(量子点与聚合物的质量百分比为10wt％，复合发光膜的厚度为20μm)的Al 2O 3阻隔膜(阻隔膜厚度为1100μm)，将阻隔膜涂覆有纳米晶/聚合物复合发光膜的一侧相对放置并在它们之间插入一层10μm的PMMA薄膜。随后缓慢通过覆膜机。覆膜机滚子温度设置为110℃，热压加工时间0.05s。该两张膜通过覆膜机热压后实现无胶封装，封装后膜之间的剥离力>6N。
实施例14
取一张一侧涂覆有绿光MAPb 0.95Sn 0.05Br 3量子点/PMMA复合发光膜(量子点与聚合物的质量百分比为8wt％，复合发光膜的厚度为20μm)的PVDC阻隔膜(阻隔膜厚度为1000μm)和另一张一侧涂覆有红光PEA 2SnI 4(PEA为苯乙胺)二维材料/PVDC复合发光膜(量子点与聚合物的质量百分比为5wt％，复合发光膜的厚度为20μm)的EVOH阻隔膜(阻隔膜厚度为1000μm)，将阻隔膜涂覆有纳米晶/聚合物复合发光膜的一侧相对放置并在它们之间插入一层20μm的PC薄膜。随后缓慢通过覆膜机。覆膜机滚子温度设置为130℃，热压加工时间1s。该两张膜通过覆膜机热压后实现无胶封装，封装后膜之间的剥离力>4N。
实施例15
取一张一侧涂覆有绿光PEA 2PbI 4二维材料/PS复合发光膜(量子点与聚合物的质量百分比为14wt％，复合发光膜的厚度为20μm)的PVDC阻隔膜(阻隔膜厚度为200μm)和另一张一侧涂覆有红光PEA 2SnI 4/PS复合发光膜(量子点与聚合物的质量百分比为8wt％，复合发光膜的厚度为50μm)的尼龙阻隔膜(阻隔膜厚度为200μm)，将阻隔膜涂覆有纳米晶/聚合物复合发光膜的一侧相对放置并在它们之间插入一层20μm的PS薄膜。随后缓慢通过覆膜机。覆膜机滚子温度设置为170℃，热压加工时间0.5s。该两张膜通过覆膜机热压后实现无胶封装，封装后膜之间的剥离力>2N。
实施例16
取一张一侧涂覆有绿光-黄光双光色发射的CsPbBr 3:Mn 2+量子点/PSF复合发光膜(量子点与聚合 物的质量百分比为5wt％，复合发光膜的厚度为100μm)的PVDC阻隔膜(阻隔膜厚度为1500μm)和另一张SiO 2阻隔膜(阻隔膜厚度为1500μm)，将阻隔膜涂覆有纳米晶/聚合物复合发光膜的一侧与另一张阻隔膜相对放置。随后缓慢通过覆膜机。覆膜机滚子温度设置为90℃，热压加工时间10s。该两张膜通过覆膜机热压后实现无胶封装，封装后膜之间的剥离力>6N。
实施例17
取一张一侧涂覆有绿光的MAPbBr 3量子点/PAN复合发光膜(量子点与聚合物的质量百分比为8wt％，复合发光膜的厚度为90μm)的PVDC阻隔膜(阻隔膜厚度为1200μm)和另一张Al 2O 3阻隔膜(阻隔膜厚度为1200μm)，将阻隔膜涂覆有纳米晶/聚合物复合发光膜的一侧与另一张阻隔膜相对放置。随后缓慢通过覆膜机。同时做三个样品，覆膜机滚子温度分别设置为120℃，140℃，160℃，热压加工时间10s。三个温度热压封装后薄膜的发光峰分别位于525nm，528nm和528nm(如图12所示)，封装后薄膜的发光峰复合显示对绿光发光峰位的要求，说明热压封装不会影响其应用。
实施例18
取一张一侧涂覆有绿光的CsPbBr 2.12I 0.88量子点/PVDC复合发光膜(量子点与聚合物的质量百分比为15wt％，复合发光膜的厚度为0.1μm)的EVOH阻隔膜(阻隔膜厚度为1000μm)和另一张尼龙阻隔膜(阻隔膜厚度为1000μm)，将阻隔膜涂覆有纳米晶/聚合物复合发光膜的一侧与另一张阻隔膜相对放置。随后缓慢通过覆膜机。同时做三个样品，覆膜机滚子温度分别设置为120℃，140℃，160℃，热压加工时间10s。三个温度热压封装后薄膜的发光峰分别位于630nm，632nm和633nm(如图13所示)，封装后薄膜的发光峰复合显示对红光发光峰位的要求，说明热压封装不会影响其应用。
实施例19
取一张一侧涂覆有绿光的CsPbBr 3量子点/PMMA复合发光膜(量子点与聚合物的质量百分比为20wt％，复合发光膜的厚度为0.5μm)的EVOH阻隔膜(阻隔膜厚度为800μm)和另一张一侧涂覆有红光FAPbBr 2.15I 0.85量子点/PMMA复合发光膜(量子点与聚合物的质量百分比为15wt％，复合发光膜的厚度为0.5μm)的SiO 2阻隔膜(阻隔膜厚度为800μm)，将阻隔膜涂覆有纳米晶/聚合物复合发光膜的一侧与另一张阻隔膜相对放置并在它们之间插入一层10μm的PC薄膜。随后缓慢通过覆膜机。覆膜机滚子温度设置为120℃，热压加工时间2s。该两张膜通过覆膜机热压后实现无胶封装，封装后膜之间的剥离力>2N。封装后薄膜有绿、红两个发光峰，分别位于525nm和628nm。将该封装好的阻隔膜置入蓝背光显示模组后，透过液晶屏后光谱如图14所示，符合显示所需的发射光谱。
实施例20
取一张一侧涂覆有绿光的CsPbBr 3量子点/PMMA复合发光膜(量子点与聚合物的质量百分比为10wt％，复合发光膜的厚度为5μm)的EVOH阻隔膜(阻隔膜厚度为200μm)和另一张一侧涂覆有红光FAPbBr 2.15I 0.85量子点/PMMA复合发光膜(量子点与聚合物的质量百分比为12wt％，复合发光膜的厚度为5μm)的Al 2O 3阻隔膜(阻隔膜厚度为200μm)，将阻隔膜涂覆有纳米晶/聚合物复合发光膜的一侧与另一张阻隔膜涂覆有纳米晶/聚合物复合发光膜的一侧相对放置。随后缓慢通过覆膜机。覆膜机滚子温度设置为120℃，热压加工时间2s。该两张膜通过覆膜机热压后实现无胶封装，封装后膜之间的剥离力>2N。封装后薄膜由于离子交换，只有一个发光峰。将该封装好的阻隔膜置入蓝背光显示模组后，透过液晶屏后光谱如图15所示，基本符合显示所需的发射光谱。
实施例21
取一张一侧涂覆有绿光的(PMA) 2PbI 4(PMA＝C 6H 5CH 2NH 3 +)二维材料/PP复合发光膜(量子点与聚合物的质量百分比为10wt％，复合发光膜的厚度为10μm)的尼龙阻隔膜(阻隔膜厚度为10μm)和另一张一侧涂覆有红光FAPbBr 2.15I 0.85量子点/PE复合发光膜(量子点与聚合物的质量百分比为8wt％，复合发光膜的厚度为10μm)的SiO 2阻隔膜(阻隔膜厚度为10μm)，将阻隔膜涂覆有纳米 晶/聚合物复合发光膜的一侧与另一张阻隔膜相对放置并在它们之间插入一层100μm的PC薄膜。随后缓慢通过覆膜机。覆膜机滚子温度设置为120℃，热压加工时间1s。该两张膜通过覆膜机热压后实现无胶封装，封装后膜之间的剥离力>2N。封装后薄膜有绿、红两个发光峰，分别位于529nm和625nm。将该封装好的阻隔膜置入蓝背光显示模组后，发射光谱符合显示所需的发射光谱。
实施例22
本实施例提供了含有钙钛矿量子点的复合薄膜层的显示背光模组。图16为本实施例提供的侧入式背光模组结构示意图，下面结合图16对本实施例进行说明。
具体地，将封装后的红光和绿光双光色发射的钙钛矿量子点/聚合物复合薄膜装配到显示背光模组中，形成侧入式背光模组。如图16所示，显示背光模组还包括导光板、反射和LED灯珠，封装后的基于钙钛矿量子点的复合薄膜层位于所述导光板的上表面，反射片位于导光板的下表面，LED灯珠位于导光板的侧面。
实施例23
本实施例提供了含有钙钛矿量子点的复合薄膜层的显示背光模组。图17为本实施例提供的直下式背光模组结构示意图，下面结合图17对本实施例进行说明。
如图17所示，显示背光模组还包括扩散板和LED灯珠，封装后的基于钙钛矿量子点的复合薄膜层位于扩散板的上方，所述LED灯珠位于扩散板的下方。
封装后的双光发射的钙钛矿量子点/聚合物复合薄膜应用于直下式背光模组，该封装薄膜位于扩散板之上，LED灯珠位于扩散板之下。
本申请中，实施例中的复合发光膜即为量子点膜。
以上所述，仅是本申请的几个实施例，并非对本申请做任何形式的限制，虽然本申请以较佳实施例揭示如上，然而并非用以限制本申请，任何熟悉本专业的技术人员，在不脱离本申请技术方案的范围内，利用上述揭示的技术内容做出些许的变动或修饰均等同于等效实施案例，均属于技术方案范围内。

Claims (27)

  1. 一种量子点膜的封装方法，其特征在于，将阻隔膜通过热压的方式封装在量子点膜的两侧，即可得到封装量子点膜；
    其中，所述量子点膜为含有量子点和聚合物的复合膜。
  2. 根据权利要求1所述的封装方法，其特征在于，所述封装方法包括将膜层A与膜层B通过热压的方式完成封装；
    所述膜层A中含有量子点膜Ⅰ和第一阻隔膜，所述量子点膜Ⅰ附着在所述第一阻隔膜上；
    所述膜层B中包括第二阻隔膜；
    所述量子点膜Ⅰ位于所述第一阻隔膜和所述第二阻隔膜之间。
  3. 根据权利要求2所述的封装方法，其特征在于，所述膜层B为所述第二阻隔膜。
  4. 根据权利要求2所述的封装方法，其特征在于，所述膜层B还包括量子点膜Ⅱ，所述量子点膜Ⅱ附着在所述第二阻隔膜上；
    所述量子点膜Ⅰ与所述量子点膜Ⅱ相对放置。
  5. 根据权利要求2所述的封装方法，其特征在于，所述膜层B还包括无机荧光粉膜，所述无机荧光粉膜附着在所述第二阻隔膜上；
    所述量子点膜Ⅰ与无机荧光粉膜相对放置。
  6. 根据权利要求5所述的封装方法，其特征在于，所述无机荧光粉膜包括无机荧光粉和聚合物，所述无机荧光粉嵌入所述聚合物中；
    所述无机荧光粉与所述聚合物中的质量百分比为1～20wt％。
  7. 根据权利要求6所述的封装方法，其特征在于，所述无机荧光粉的颗粒尺寸不大于200μm。
  8. 根据权利要求5所述的封装方法，其特征在于，所述无机荧光粉膜的厚度为5～200μm。
  9. 根据权利要求1所述的封装方法，其特征在于，在所述量子点膜中，所述量子点嵌入所述聚合物中；
    所述量子点与所述聚合物的质量百分比为1～20wt％。
  10. 根据权利要求1所述的封装方法，其特征在于，所述量子点膜的厚度为0.1～100μm。
  11. 根据权利要求1所述的封装方法，其特征在于，所述量子点膜中的聚合物或无机荧光粉膜中的聚合物独立地选自聚偏氟乙烯、聚偏氟乙烯和三氟乙烯共聚物、聚丙烯腈、聚醋酸乙烯酯、醋酸纤维素、氰基纤维素、聚砜、芳香聚酰胺、聚酰亚胺、聚碳酸酯、聚苯乙烯、聚甲基丙烯酸甲酯、聚乙烯、聚丙烯、乙烯-醋酸乙烯共聚物中的至少一种。
  12. 根据权利要求1所述的封装方法，其特征在于，所述阻隔膜包括聚偏二氯乙烯膜、乙烯-乙烯醇共聚物膜、间二甲基胺和已二酸缩聚物膜、氧化物镀覆膜中的至少一种。
  13. 根据权利要求1所述的封装方法，其特征在于，所述阻隔膜的厚度为5-1500μm。
  14. 根据权利要求1所述的封装方法，其特征在于，所述热压的条件为：热压温度40℃～180℃；热压时间0.01～40s。
  15. 根据权利要求2所述的封装方法，其特征在于，所述封装方法包括方法一、方法二或方法三中的任一种；
    方法一包括：将一张单侧附着有量子点膜Ⅰ的第一阻隔膜与另一张第二阻隔膜相对放置，所述量子点膜Ⅰ朝向所述第二阻隔膜，通过热压的方式完成封装；
    方法二包括：将一张单侧附着有量子点膜Ⅰ的第一阻隔膜与另一张单侧附着有量子点膜Ⅱ的第二阻隔膜相对放置，所述量子点膜Ⅰ和量子点膜Ⅱ相对，通过热压的方式完成封装；
    方法三包括：将一张单侧附着有量子点膜Ⅰ的第一阻隔膜与另一张单侧附着有无机荧光粉膜的第二阻隔膜相对放置，所述量子点膜Ⅰ与无机荧光粉膜相对，通过热压的方式完成封装。
  16. 根据权利要求15所述的封装方法，其特征在于，所述方法二包括，将所述量子点膜Ⅰ与量子点膜Ⅱ之间加入聚合物膜层，通过热压的方式完成封装；
    所述方法三包括：将所述量子点膜Ⅰ和无机荧光粉膜之间加入聚合物膜层，通过热压的方式完成封装。
  17. 根据权利要求16所述的封装方法，其特征在于，所述聚合物膜层包括聚偏氟乙烯、聚偏氟乙烯和三氟乙烯共聚物、聚丙烯腈、聚醋酸乙烯酯、醋酸纤维素、氰基纤维素、聚砜、芳香聚酰胺、聚酰亚胺、聚碳酸酯、聚苯乙烯、聚甲基丙烯酸甲酯、聚乙烯、聚丙烯、乙烯-醋酸乙烯共聚物中的至少一种。
  18. 根据权利要求16所述的封装方法，其特征在于，所述聚合物膜层的厚度为5-100μm。
  19. 根据权利要求1所述的封装方法，其特征在于，所述量子点选自钙钛矿型量子点、II-VI族系列量子点、InP系列量子点或者CuInS 2系列量子点中的任一种；
    所述钙钛矿型量子点选自具有结构通式ABX 3、结构通式A 3B 2X 9、结构通式A 2BX 6或结构通式(RNH 3) 2A m-1B mX 3m+1中的化合物中的任一种；
    其中，A位为一价金属阳离子或者一价有机阳离子，B位为二价或者三价金属阳离子，X为卤素阴离子，R代表烷基或者芳香基团，m代表有机链之间的金属阳离子层数，m的取值范围为1～100；
    所述II-VI族系列量子点包括II-VI族量子点、II-VI族掺杂量子点、II-VI族核壳结构量子点中的任一种；
    所述II-VI族量子点包括具有结构通式A’B’的化合物中的任一种
    其中，A’选自Cd、Zn、Cu、Pb、Mn、Sn中的一种或者两种；
    B’选自S、Se、Te中的至少一种；
    所述II-VI族掺杂量子点中含有掺杂元素，所述掺杂元素包括Cu、Ag、Mn、Al中的至少一种；
    所述II-VI族核壳结构量子点中，内核为II-VI族量子点，外壳为II-VI族化合物成分；
    所述InP系列量子点包括InP量子点、InP掺杂量子点、InP核壳结构量子点中的任一种；
    所述InP掺杂量子点中含有掺杂元素，所述掺杂元素包括Cd、Zn、Cu、Ag、Mn、Al中的至少一种；
    所述InP核壳结构量子点中，内核为InP量子点、外壳为II-VI族化合物成分；
    所述CuInS 2系列量子点包括CuInS 2量子点、CuInS 2掺杂量子点中的任一种；
    所述CuInS 2掺杂量子中含有掺杂元素，所述掺杂元素包括Cd、Zn、Ag、Mn中的至少一种。
  20. 根据权利要求19所述的封装方法，其特征在于，在钙钛矿型量子点中，A选自CH 3NH 3 +、CH(NH)NH 3 +、Cs +、Rb +、C 6H 5CH 2NH 3 +、C 6H 5(CH 2) 2NH 3 +中的至少一种；
    B选自Pb 2+、Cu 2+、Sb 3+、Bi 3+、In 3+、Al 3+、Sn 2+、Cd 2+、Zn 2+中的至少一种。
  21. 一种封装量子点膜，其特征在于，所述封装量子点膜包括量子点膜和阻隔膜，所述量子点膜夹设在所述阻隔膜之间；
    所述封装量子点膜采用权利要求1至20中任一项所述的封装方法制备得到。
  22. 根据权利要求21所述的封装量子点膜，其特征在于，所述封装量子点膜包括膜层A、膜层B；
    所述膜层A中由上至下依次包括第一阻隔膜和量子点膜Ⅰ；
    所述膜层B中含有第二阻隔膜，所述膜层B位于所述量子点膜Ⅰ的下方。
  23. 根据权利要求22所述的封装量子点膜，其特征在于，所述封装量子点膜包括结构Ⅰ、结构Ⅱ或结构Ⅲ中的任一种；
    结构Ⅰ：所述封装量子点膜由上至下依次包括第一阻隔膜、量子点膜Ⅰ、第二阻隔膜；
    结构Ⅱ：所述封装量子点膜由上至下依次包括第一阻隔膜、量子点膜Ⅰ、量子点膜Ⅱ、第二阻隔膜；
    结构Ⅲ：所述封装量子点膜由上至下依次包括第一阻隔膜、量子点膜Ⅰ、无机荧光粉膜、第二阻隔膜。
  24. 根据权利要求23所述的封装量子点膜，其特征在于，在所述结构Ⅱ中，所述量子点膜Ⅰ和量子点膜Ⅱ中含有相同的量子点或者含有不同的量子点。
  25. 根据权利要求22所述的封装量子点膜，其特征在于，所述封装量子点膜还包括聚合物膜层；
    所述聚合物膜层位于所述膜层A和膜层B之间。
  26. 根据权利要求25所述的封装量子点膜，其特征在于，所述封装量子点膜包括结构Ⅳ或结构Ⅴ；
    结构Ⅳ：所述封装量子点膜由上至下依次包括第一阻隔膜、量子点膜Ⅰ、聚合物膜层、量子点膜Ⅱ、第二阻隔膜；
    结构Ⅴ：所述封装量子点膜由上至下依次包括第一阻隔膜、量子点膜Ⅰ、聚合物膜层、无机荧光粉膜、第二阻隔膜。
  27. 权利要求1～20中任一项所述的封装方法制备得到的封装量子点膜或权利要求21～26任一项所述的封装量子点膜在显示背光模组领域、滤光薄膜领域中的应用。
PCT/CN2020/076580 2019-08-23 2020-02-25 量子点膜的封装方法以及封装量子点膜和应用 WO2021036211A1 (zh)

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