WO2021035617A1 - 电容式传感系统以及电容式触摸屏的传感电路和传感方法 - Google Patents

电容式传感系统以及电容式触摸屏的传感电路和传感方法 Download PDF

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WO2021035617A1
WO2021035617A1 PCT/CN2019/103312 CN2019103312W WO2021035617A1 WO 2021035617 A1 WO2021035617 A1 WO 2021035617A1 CN 2019103312 W CN2019103312 W CN 2019103312W WO 2021035617 A1 WO2021035617 A1 WO 2021035617A1
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current
voltage
sensing
circuit
input
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PCT/CN2019/103312
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English (en)
French (fr)
Inventor
林永福
庄朝贵
徐嘉骏
徐建昌
徐荣贵
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深圳市汇顶科技股份有限公司
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Priority to PCT/CN2019/103312 priority Critical patent/WO2021035617A1/zh
Priority to CN201980001700.3A priority patent/CN112805665B/zh
Publication of WO2021035617A1 publication Critical patent/WO2021035617A1/zh

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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means

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  • the present disclosure relates to capacitive sensing technology, and in particular to a sensing circuit and sensing method of a capacitive touch screen, and a related capacitive sensing system.
  • the sensing circuit of the capacitive touch screen can detect the change in the capacitance value of the capacitive node caused by the touch object, and generate an output voltage accordingly as a detection result.
  • the variation range of the output voltage of the sensing circuit is usually increased as much as possible to increase the amount of signal generated due to the variation of the capacitance value.
  • a large part of the output voltage of the sensing circuit is the contribution from the input voltage, and the contribution from the change of the capacitance value only accounts for a small part of the output voltage.
  • One of the objectives of the present disclosure is to provide a sensing circuit and a sensing method of a capacitive touch screen, and a related capacitive sensing system to solve the above-mentioned problems.
  • An embodiment of the present disclosure provides a sensing circuit of a capacitive touch screen.
  • the sensing circuit includes a first conversion circuit, a first current mirror circuit, and a second conversion circuit.
  • the first conversion circuit is coupled to the sensing node of the capacitive touch screen, and is used for converting the charge accumulated by the sensing node into a first current according to a first input voltage.
  • the first current mirror circuit is coupled to the first conversion circuit for generating a second current according to the first current, wherein the second current is a copy or a multiple of the first current.
  • the second conversion circuit is coupled to the current mirror circuit for generating an output voltage in response to at least the second current.
  • the capacitive sensing system includes a capacitive touch screen and a sensing circuit.
  • the capacitive touch screen has a sensing node, and the sensing node generates a capacitance value change in response to a touch event on the capacitive touch screen.
  • the sensing circuit is used for sensing the change of the capacitance value.
  • the sensing circuit includes a first conversion circuit, a first current mirror circuit, and a second conversion circuit.
  • the first conversion circuit is coupled to the sensing node, and is configured to convert the charge accumulated in the sensing node into a first current according to a first input voltage.
  • the first current mirror circuit is coupled to the first conversion circuit for generating a second current according to the first current, wherein the second current is a copy or a multiple of the first current.
  • the second conversion circuit is coupled to the current mirror circuit for generating an output voltage in response to at least the second current.
  • An embodiment of the present disclosure provides a sensing method for a capacitive touch screen.
  • the sensing method includes: converting the charge accumulated in the sensing node of the capacitive touch screen into a first current according to a first input voltage; receiving the first current by a first current mirror circuit to generate a second current, wherein The second current is a copy or multiplication of the first current; and at least an output voltage is generated in response to the second current.
  • Fig. 1 is a functional block diagram of an embodiment of the capacitive sensing system of the present disclosure.
  • Fig. 2 is a schematic diagram of an embodiment of the sensing circuit shown in Fig. 1.
  • FIG. 3 is a schematic diagram of an embodiment of a sensing circuit of a sensing capacitive touch screen.
  • Fig. 4 is a schematic diagram of another embodiment of the sensing circuit shown in Fig. 1.
  • FIG. 5 is a flowchart of an embodiment of the sensing method of the capacitive touch screen of the present disclosure.
  • Fig. 1 is a functional block diagram of an embodiment of the capacitive sensing system of the present disclosure.
  • the capacitive sensing system 100 can be installed in an electronic device.
  • the electronic device may be implemented as a portable electronic device, such as a mobile phone, a tablet computer, a laptop computer, or other types of portable electronic devices.
  • the capacitive sensing system 100 may include (but is not limited to) a capacitive touch screen 110, a sensing circuit 120, and a processing circuit 130.
  • the capacitive touch screen 110 can use self-capacitance or mutual-capacitance sensing technology to detect a touch event TE on the capacitive touch screen 110.
  • the capacitive touch screen 110 may have multiple sensing nodes (or may be referred to as capacitive nodes; not shown in FIG. 1).
  • the capacitive touch screen 110 may have a plurality of driving electrodes arranged along a first direction and a plurality of sensing electrodes arranged along a second direction (not shown in FIG. 1), wherein the A plurality of driving electrodes are arranged on one electrode layer (not shown in FIG. 1), and the plurality of sensing electrodes are arranged on another electrode layer (not shown in FIG. 1).
  • Each sensing node may be located at (but not limited to) the intersection of a driving electrode and a sensing electrode in the capacitive touch screen 110.
  • a touch event TE occurs (such as a touch object touching or approaching the capacitive touch screen 110)
  • one or more sensor nodes of the capacitive touch screen 110 can respond to the touch event TE to generate capacitance changes to reflect the operation of the touch object behavior.
  • the sensing circuit 120 is coupled to a plurality of sensing nodes of the capacitive touch screen 110, and is used to sense the change of the capacitance value of each sensing node according to a first input voltage Vin (such as an analog voltage signal or an AC voltage).
  • An output voltage Vout (such as an analog voltage signal or AC voltage) is generated.
  • the sensing circuit 120 may include (but is not limited to) a first conversion circuit 122, a first current mirror circuit 125, and a second conversion circuit 126.
  • the first conversion circuit 122 is used for converting the charge accumulated in each sensing node into a first current Iout according to the first input voltage Vin.
  • the first conversion circuit 122 can perform a charge-to-current conversion operation on the charges accumulated by each sensor node.
  • the first current mirror circuit 125 is coupled to the first conversion circuit 122 for generating a second current Ix according to the first current Iout.
  • the second current Ix can be regarded as a copy or multiplication of the first current Iout, wherein the ratio between the second current Ix and the first current Iout is adjustable.
  • the first current mirror circuit 125 may have a programmable gain.
  • the second conversion circuit 126 is coupled to the first current mirror circuit 125 for generating an output voltage Vout in response to at least the second current Ix.
  • the sensing circuit 120 can first convert the charges accumulated by each sensing node in response to the first input voltage Vin into the first current Iout, Thus, the output voltage Vout is generated according to the copy (or multiplication) of the first current Iout.
  • the sensing circuit 120 can perform the charge amplification operation according to the current conversion result of the first input voltage Vin (the first current Iout or the second current Ix), instead of directly using the first input voltage Vin to perform the charge amplification operation, the transmission The sensing circuit 120 can reduce the contribution from the voltage variation range (such as the peak-to-peak value) of the first input voltage Vin in the voltage variation range (such as the peak-to-peak value) of the output voltage Vout. Further explanation will be given later.
  • the processing circuit 130 is coupled to the sensing circuit 120 to perform signal processing on the output voltage Vout to detect the touch event TE.
  • the processing circuit 130 may include a filter circuit 132, an analog-to-digital conversion circuit 134, and a signal processor 136.
  • the filter circuit 132 can filter the output voltage Vout to generate the filtered voltage Vf.
  • the filter circuit 132 may be implemented by a low-pass filter, such as an anti-alias filter, to reduce the noise component in the output voltage Vout.
  • the analog-to-digital conversion circuit 134 can convert the filtered voltage Vf into a digital signal Vd for the signal processor 136 to perform signal processing.
  • FIG. 2 is a schematic diagram of an embodiment of the sensing circuit 120 shown in FIG. 1.
  • the sensing circuit 220 may include (but is not limited to) a first conversion circuit 222, a first current mirror circuit 225, and a second conversion circuit 226.
  • the first conversion circuit 222, the first current mirror circuit 225, and the second conversion circuit 226 can be used to implement the first conversion circuit 122, the first current mirror circuit 125, and the second conversion circuit 126 shown in FIG. 1, respectively.
  • the first conversion circuit 222 is coupled to a sensing node NS of the capacitive touch screen 110, and is used for converting the charge accumulated in the sensing node NS into a first current Iout according to the first input voltage Vin.
  • the sensing node NS is coupled to a sensing capacitor CL , which can represent the equivalent capacitance formed between the driving electrode and the sensing electrode corresponding to the sensing node NS.
  • the first input voltage Vin may be implemented by an AC voltage, such as a sine wave voltage.
  • an AC voltage with a peak-to-peak value of 2 volts can be used to implement the first input voltage Vin.
  • the first conversion circuit 222 may include (but is not limited to) a voltage buffer 223.
  • the input terminal BFI of the voltage buffer 223 is used to receive the first input voltage Vin. Since the output terminal BFO of the voltage buffer 223 is coupled to the sensing node NS, the voltage buffer 223 can convert the charge accumulated in the sensing node NS into the first input voltage Vin according to the buffered version of the first input voltage Vin (that is, the buffer voltage Vbf). A current Iout.
  • the voltage buffer 223 can be implemented by a voltage follower, so that the buffer voltage Vbf can be a copy of the first input voltage Vin.
  • the voltage follower can be implemented by an amplifier 224, which has a first input terminal TI11, a second input terminal TI12, and an output terminal TO1.
  • the first input terminal TI11 is used to receive the first input voltage Vin.
  • the second input terminal TI12 and the output terminal TO1 are connected to each other and coupled to the sensor node NS.
  • the signal path between the sensor node and the second input terminal TI12 NS (such as a signal line or wire) of the equivalent resistance R L is represented by a resistor.
  • the output terminal TO1 is coupled to the first current mirror circuit 224 for outputting the first current Iout.
  • the first current mirror circuit 225 is used to generate a second current Ix according to the first current Iout, which can be a copy or a multiple of the first current Iout. It is worth noting that the first current Iout (which carries the charge accumulation information of the sensing node NS) may flow into the amplifier 224 through the output terminal TO1, instead of flowing outside the amplifier 224 (such as flowing from the output terminal BFO to the first current mirror). Circuit 225). In order to enable the circuit at the back end of the first conversion circuit 222 to receive the information carried by the first current Iout, the sensing circuit 220 can use the first current mirror circuit 225 to generate the second current Ix that flows to the circuit at the back end of the first conversion circuit 222. The charge accumulation information of the sensing node NS carried by the first current Iout can be transmitted later for processing by the back-end circuit (such as the second conversion circuit 226).
  • the back-end circuit such as the second conversion circuit 226).
  • the second conversion circuit 226 includes (but is not limited to) an amplifier 228 and a resistor-capacitor network 229.
  • the amplifier 228 has a first input terminal TI21, a second input terminal TI22 and an output terminal TO2.
  • the first input terminal TI21 is coupled to a reference voltage Vref, such as a common mode voltage or a ground voltage.
  • the second input terminal TI22 is coupled to the first current mirror circuit 225 for receiving a copy or multiplication of the first current Iout, that is, the second current Ix.
  • the output terminal TO2 is used to output the output voltage Vout for use by the next stage circuit (such as the processing circuit 130 shown in FIG. 1).
  • the resistor-capacitor network 229 is coupled between the second input terminal TI22 and the output terminal TO2 of the amplifier 228.
  • the resistor-capacitor network 229 may include (but is not limited to) a resistor R F and a capacitor C F.
  • the second conversion circuit 226 can amplify the charge information accumulated in the sensing node NS carried in the second current Ix, and According to this, the output voltage Vout is generated.
  • the first conversion circuit 222 may convert the charge accumulated in the sensing node NS into the first current Iout according to the first input voltage Vin.
  • the first current Iout (a function with real variables (time)) can be transformed into a function with complex variables.
  • the Laplace transform IOUT(s) of the first current Iout is equal to the product of the Laplace transform VIN(s) of the first input voltage Vin and the transfer function H1(s), And can be expressed by the following formula (1):
  • CL represents the capacitance value of the sensing node NS
  • RL represents a resistance value of the resistance L R.
  • the second conversion circuit 226 can generate the output voltage Vout in response to the second current Ix (a copy or multiplication of the first current Iout).
  • the Laplace transform VOUT(s) of the output voltage Vout can be derived from the product of the Laplace transform IOUT(s) and the transfer function H2(s) Means:
  • CF represents the capacitance value of the capacitor C F
  • RF represents the resistance value of the resistor R F.
  • the sensing circuit 220 can perform charge amplification according to the current conversion result of the first input voltage Vin (such as a copy (or multiplication) of the first current Iout). Operation, thereby greatly reducing the ratio of the voltage variation range (such as the peak-to-peak value) of the first input voltage Vin to the voltage variation range (such as the peak-to-peak value) of the output voltage Vout.
  • FIG. 3 shows an embodiment in which the current signal generated by applying the first input voltage Vin to the sensing node NS is directly used to perform the charge amplification operation.
  • the Laplace transform VOUT(s) of the output voltage Vout can be represented by the product of Vin's Laplace transform VIN(s) and the transfer function H4(s).
  • the charge accumulated on the sensing node NS will change with the change of the voltage level of the first input voltage Vin, resulting in a change in the capacitance value of the sensing node NS and a change in the current level of the first current Iout.
  • the voltage level of the output voltage Vout is changed. Therefore, the product of the Laplace transform VIN(s) and the transfer function H3(s) can correspond to the voltage variation range generated by the capacitance change of the sensing node NS in response to the first input voltage Vin, and the Laplace transform Converting VIN(s) corresponds to the voltage variation range of the first input voltage Vin.
  • the voltage variation range (peak-to-peak value) of the power supply voltage of the sensing circuit 320 is (but not limited to) 2.6 volts, and the voltage variation range (peak-to-peak value) of the output voltage Vout is set at (but not limited to) 2 volts or less
  • the 2 volt voltage variation range of the output voltage Vout is mostly derived from the voltage variation range (peak-to-peak value of the first input voltage Vin; Corresponds to the contribution of the Laplace transform VIN(s)).
  • the voltage variation range corresponding to the change in the capacitance value of the sensing node NS accounts for a relatively small proportion of the 2 volt voltage variation range.
  • the voltage variation range of the first input voltage Vin accounts for 80% of the voltage variation range of the output voltage Vout
  • the corresponding voltage variation range of the capacitance value change of the sensing node NS only accounts for 20% of the voltage variation range of the output voltage Vout .
  • the voltage variation range (peak-to-peak value) of the power supply voltage of the sensing circuit 220 is (but not limited to) 2.6 volts
  • the voltage variation range of the output voltage Vout ( Peak-to-peak value) is set at (but not limited to) 2 volts to maintain the operation of the circuit, because the Laplace transform VOUT(s) is equal to the Laplace transform VIN(s) and the transfer function H3(s)
  • the product is not the product of the transfer function H4(s) (the result of the addition of 1 and the transfer function H3(s)). Therefore, the 2 volt voltage range of the output voltage Vout corresponds to the change in the capacitance of the sensing node NS The voltage change range.
  • the capacitive sensing solution of the present disclosure can greatly reduce the ratio of the voltage variation range of the first input voltage Vin to the voltage variation range of the output voltage Vout, so it can increase the voltage variation range of the output voltage Vout.
  • the contribution of the change in capacitance of the sensing node NS can be increased.
  • the resistance value of the resistor R F can be increased to further increase the voltage change range corresponding to the change in the capacitance value of the sensing node NS.
  • FIG. 4 is a schematic diagram of another embodiment of the sensing circuit 120 shown in FIG. 1.
  • the structure of the sensing circuit 420 shown in FIG. 4 is roughly the same as/similar to the sensing circuit 220 shown in FIG. 2.
  • the sensing circuit 420 also includes a compensation circuit structure to more accurately obtain the sensor node
  • the capacitance value of NS changes. For example, when a touch event occurs TE (such as a touch objects touch / proximity capacitive touch screen 110), the sensing node NS can respond to the touch event generated TE capacitance variation, which sense capacitance by the shunt capacitance C L is represented ⁇ C L .
  • Sensing circuit 420 may employ a circuit configuration of the compensation capacitor ⁇ C L to obtain related information more accurately.
  • the sensing circuit 420 also includes (but not limited to) a storage capacitor C A, a third switching circuit 442 and a second current mirror circuit 445, wherein the auxiliary capacitance C A, and a third switching circuit 442
  • the second current mirror circuit 445 can be used as at least a part of the compensation circuit structure of the sensing circuit 420.
  • the first conversion circuit 222, a first current mirror circuit 225, a second conversion circuit 226, the storage capacitor C A, the third switching circuit 442 and a second current mirror circuit 445 may be implemented on the same chip.
  • the capacitance value of the storage capacitor C A may be equal to the capacitance value of the sensing node NS had before the occurrence of a touch event TE, L, such as the capacitance value of the sensing capacitance C.
  • the third switching circuit 442 to a second input of the auxiliary voltage VA of the charge accumulation capacitor C A is converted to a third currents IA, wherein the second input voltage VA having a phase opposite to the phase of a first input voltage Vin.
  • the second input voltage VA may be a sine wave voltage that is 180 degrees out of phase with the first input voltage Vin, where the first input voltage Vin and
  • the second input voltage VA may have the same amplitude.
  • the circuit structure of the third conversion circuit 442 may be substantially the same as the circuit structure of the first conversion circuit 222 to simulate a situation in which the first conversion circuit 222 generates a current signal in response to the accumulated charges of the sensor node NS before the touch event TE occurs.
  • the third switching circuit 442 may comprise a resistor R A and a voltage buffer 443.
  • the resistance value of the resistor R A L may be equal to the resistance of the resistor R.
  • the voltage buffer 443 can be implemented by an amplifier 444, which has a first input terminal TI31, a second input terminal TI32 and an output terminal TO3.
  • the first input terminal TI31 is used to receive the second input voltage VA.
  • a second input terminal and the output terminal TI32 TO3 contact with each other, and to the auxiliary capacitance C A is coupled via a resistor R A.
  • the output terminal TO3 is used to output the third current IA.
  • the second current mirror circuit 445 is coupled to the third conversion circuit 442 for generating a fourth current Iy according to the third current IA, which is a copy or multiplication of the third current IA.
  • the current gain of the second current mirror circuit 445 may be the same/similar to the current gain of the first current mirror circuit 225.
  • the difference between the current gain of the second current mirror circuit 445 and the current gain of the first current mirror circuit 225 may be 10%, 5%, 1%, or 10% of the current gain of the first current mirror circuit 225. Within 0.5%.
  • the fourth current Iy carrying the capacitance value information before the occurrence of the touch event TE can also be transmitted to The second conversion circuit 226.
  • the second conversion circuit 226 can generate the output voltage Vout in response to the second current Ix and the fourth current Iy.
  • the second voltage VA input to the first input voltage Vin same amplitude but opposite phase to each other, and the auxiliary capacitor C A and the sensing capacitor C can have the same capacitance value L with each other, and a third current IA a first current Iout current component in response to a first sensing capacitor C L input voltage Vin generated by the same amplitude but opposite phases to each other. That is, the third current IA generated by the third conversion circuit 442 can be used to eliminate/reduce the current generated by the sensing capacitor CL in response to the first input voltage Vin before the touch event TE occurs.
  • the fourth current Iy generated by the second current mirror circuit 445 can be used to eliminate/reduce the current component generated by the sensing capacitor C L in response to the first input voltage Vin in the second current Ix, so that the second conversion circuit 226 generates the information carried by the output voltage Vout most of the capacitance value of the capacitance variation ⁇ C L can be derived from.
  • the first current mirror circuit 225 can adaptively adjust the ratio between the second current Ix and the first current Iout, thereby improving the sensing quality. For example, when the noise of the surrounding environment is large, the first current mirror circuit 225 can reduce the current gain according to a control signal CS, where the control signal CS can be made by a back-end circuit (such as the signal processor 136 shown in FIG. 1) Generated by noise detection. In some embodiments, in the case where the first current mirror circuit 225 can adjust the ratio between the second current Ix and the first current Iout according to the control signal CS, the second current mirror circuit 445 can also adjust according to the control signal CS. The ratio between the fourth current Iy and the third current IA.
  • the first conversion circuit 222 may be implemented by other charge-to-current converters. That is to say, as long as it is a conversion circuit that can convert the charge accumulated in the sensing node NS according to the first input voltage Vin to generate the first current Iout, the design related changes are within the scope of the present disclosure.
  • FIG. 5 is a flowchart of an embodiment of the sensing method of the capacitive touch screen of the present disclosure. If the results obtained are substantially the same, the steps do not have to be performed in the order shown in FIG. 5. For example, certain steps can be inserted in it.
  • the capacitive touch screen 110 and the sensing circuit 420 shown in FIG. 4 are used to describe the sensing method shown in FIG. 5 below. However, it is feasible to apply the sensing method shown in FIG. 5 to the sensing circuit 120 shown in FIG. 1 and/or the sensing circuit 220 shown in FIG. 2.
  • the sensing method shown in Figure 5 can be briefly summarized as follows.
  • Step 502 Convert the charge accumulated in a sensing node of the capacitive touch screen into a first current according to a first input voltage.
  • the first conversion circuit 222 converts the charge accumulated in the sensing node NS into the first current Iout.
  • Step 504 Utilize a first current mirror circuit to receive the first current to generate a second current, wherein the second current is a copy or a multiple of the first current.
  • the first current mirror circuit 225 is used to receive the first current Iout to generate the second current Ix.
  • Step 506 Generate an output voltage in response to at least the second current.
  • the second conversion circuit 226 responds to at least the second current Ix to generate the output voltage Vout.
  • the voltage variation range generated by the change of the capacitance value of the sensing node NS in response to the first input voltage Vin is equal to the voltage variation range of the output voltage Vout. That is to say, the change of the capacitance value of the sensing node NS will cause the change of the charge accumulated on the sensing node NS with the first input voltage Vin.
  • the first input voltage may be coupled to an input terminal of a voltage buffer, and the sensing node may be coupled to an output terminal of the voltage buffer, so as to transmit the The charge accumulated in the sensing node is converted into the first current.
  • the first input voltage Vin may be received from the input terminal BFI of the voltage buffer 223 in the first conversion circuit 222, and the sensing node NS may be coupled to the output terminal BFO of the voltage buffer 223 to connect the sensing node The charge accumulated by NS is converted into the first current Iout.
  • the capacitive sensing solution of the present disclosure can also use current compensation to more accurately obtain the change in capacitance value generated at the sensing node in response to a touch event.
  • the third switching circuit 442 may be a first phase of the input voltage Vin input voltage VA will be opposite to the second storage capacitor C A is charged into a third accumulating currents IA, wherein the second input voltage VA in accordance with phase, and the capacitance value of the storage capacitor C a is equal to the TE event occurs before a touch sensor having a capacitance value NS node (L, such as a capacitance value of the sensing capacitance C).
  • the second current mirror circuit 445 receives the third current IA to generate the fourth current Iy.
  • the second switching circuit 226 may respond to the second and fourth current Iy current Ix generates an output voltage Vout of, most of the information they carry can be from a capacitance of the capacitor ⁇ C of change L.
  • the capacitive sensing solution of the present disclosure can greatly reduce the ratio of the input voltage variation range to the output voltage variation range.
  • the capacitive sensing solution of the present disclosure can further improve the sensing quality.

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Abstract

一种电容式触摸屏的传感电路、电容式传感系统和电容式触摸屏的传感方法。所述传感电路包括第一转换电路(222)、第一电流镜电路(225)及第二转换电路(226)。所述第一转换电路(222)耦接到所述电容式触摸屏的传感节点(110),用以根据第一输入电压将所述传感节点积累的电荷转换为第一电流。所述第一电流镜电路(225)耦接到所述第一转换电路(222),用以根据所述第一电流产生第二电流,其中所述第二电流是所述第一电流的复制或倍乘。所述第二转换电路(226)耦接到所述电流镜电路(225),用以至少回应所述第二电流产生输出电压。所述传感电路可大幅增加所述输出电压的电压变化范围中来自所述传感节点的电容值变化的贡献。

Description

电容式传感系统以及电容式触摸屏的传感电路和传感方法 技术领域
本公开涉及电容式传感技术,尤其涉及一种电容式触摸屏的传感电路和传感方法,及其相关的电容式传感系统。
背景技术
当触摸物体(诸如手指或触控笔)操作电容式触摸屏时,电容式触摸屏的传感电路可检测出触摸物体造成的电容节点的电容值变化,并据以产生输出电压,作为检测结果。为了提高操作的准确度,通常会尽可能增加传感电路的输出电压的变化范围,以增加因为电容值变化而产生的信号量。然而,传感电路的输出电压中一大部分是来自输入电压的贡献,来自电容值变化的贡献仅占输出电压的一小部分。因此,当增大输入电压的振幅以增大输出电压的变化范围时,所得到的输出电压的变化范围中仍有一大部分是来自输入电压的贡献。此外,受限于电源电压的变化范围,无法通过任意增大输入电压的振幅的方式来得到比电源电压的变化范围还大的输出电压的变化范围。在输出电压的变化范围中有一大部分是来自输入电压的贡献,以及输出电压的变化范围受限于电源电压的变化范围的情形下,输出电压的变化范围中来自电容值变化的贡献没办法进一步增加。
因此,需要一种创新的电容传感方案,其可增加因为电容节点的电容值变化而产生的电压输出的变化范围。
发明内容
本公开的目的之一在于提供一种电容式触摸屏的传感电路和传感方法,及其相关的电容式传感系统,来解决上述问题。
本公开的一实施例提供了一种电容式触摸屏的传感电路。所述传感电路包括第一转换电路、第一电流镜电路及第二转换电路。所述第一转换电路耦接到所述电容式触摸屏的传感节点,用以根据第一输入电压将所述传感节点积累的电荷转换为第一电流。所述第一电流镜电路耦接到所述第一转换电路,用以根据所述第一电流产生第二电流,其中所述第二电流是所述第一电流的复制或倍乘。所述第二转换电路耦接到所述电流镜电路,用以至少回应所述第二电流产生输出电压。
本公开的一实施例提供了一种电容式传感系统。所述电容式传感系统包括电容式触摸屏和传感电路。所述电容式触摸屏具有传感节点,所述传感节点回应于所述电容式触摸屏上的触摸事件产生电容值变化。所述传感电路用以传感所述电容值变化。所述传感电路包括第一转换电路、第一电流镜电路及第二转换电路。所述第一转换电路耦接到所述传感节点,用以根据第一输入电压将所述传感节点积累的电荷转换为第一电流。所述第一电流镜电路耦接到所述第一转换电路,用以根据所述第一电流产生第二电流,其中所述第二电流是所述第一电流的复制或倍乘。所述第二转换电路耦接到所述电流镜电路,用以至少回应所述第二电流产生输出电压。
本公开的一实施例提供了一种电容式触摸屏的传感方法。所述传感方法包括:根据第一输入电压将所述电容式触摸屏的传感节点积累的电荷转换为第一电流;利用第一电流镜电路接收所述第一电流以产生第二电流,其中所述第二电流是所述第一电流的复制或倍乘;以及至少回应所述第二电流产生输出电压。
附图说明
图1是本公开的电容式传感系统的一实施例的功能方框示意图。
图2是图1所示的传感电路的一实施例的示意图。
[根据细则91更正 15.10.2019] 
图3是传感电容式触摸屏的传感电路的一实施例的示意图。
图4是图1所示的传感电路的另一实施例的示意图。
图5是本公开电容式触摸屏的传感方法的一实施例的流程图。
其中,附图标记说明如下:
100                               电容式传感系统
110                               电容式触摸屏
120、220、320、420                传感电路
122、222                          第一转换电路
125、225                          第一电流镜电路
126、226                          第二转换电路
130                               处理电路
132                               滤波电路
134                               模数转换电路
136                               信号处理器
223                               电压缓冲器
224、228                          放大器
229                               电阻电容网络
442                               第三转换电路
445                               第二电流镜电路
502、504、506                     步骤
C L                                传感电容
NS                                传感节点
R L、R F                            电阻
C F                                电容
C A                                辅助电容
BFI                               输入端
TI11、TI21、TI31                  第一输入端
TI12、TI22、TI32                 第二输入端
BFO、TO1、TO2、TO3               输出端
TE                               触摸事件
Vin                              第一输入电压
VA                               第二输入电压
Iout                             第一电流
Ix                               第二电流
IA                               第三电流
Iy                               第四电流
Vout                             输出电压
Vf                               经滤波处理后的电压
Vd                               数字信号
Vref                             参考电压
CS                               控制信号
具体实施方式
在说明书及之前的权利要求书当中使用了某些词汇来指称特定的组件。本领域的技术人员应可理解,制造商可能会用不同的名词来称呼同样的组件。本说明书及之前的权利要求书并不以名称的差异来作为区分组件的方式,而是以组件在功能上的差异来作为区分的基准。在通篇说明书及之前的权利要求书当中所提及的“包含”为一开放式的用语,故应解释成“包含但不限定于”。此外,“耦接”一词在此包含任何直接和间接的电连接手段。因此,若文中描述一第一装置耦接于一第二装置,则代表所述第一装置可直接电连接于所述第二装置,或通过其它装置或连接手段间接地电连接到所述第二装置。
此外,在说明书及之前的权利要求书当中使用的术语“相同”、“等于”和“相似”,是指彼此数值之间的差在给定值或范围的10%、5%、1%或0.5%内,或是在可接受标准误差内。
图1是本公开的电容式传感系统的一实施例的功能方框示意图。电容式传感系统100可设置在电子设备之中。所述电子设备可实施为便携式电子设备,诸如移动电话、平板计算机、膝上型计算机或其他类型的便携式电子设备。在此实施例中,电容式传感系统100可包括(但不限于)一电容式触摸屏110、一传感电路120以及一处理电路130。
电容式触摸屏110可采用自容(self-capacitance)或互容(mutual-capacitance)传感技术来侦测电容式触摸屏110上的一触摸事件TE。电容式触摸屏110可具有多个传感节点(sensing node)(或可称作电容节点(capacitive node);图1未示)。举例来说(但本公开不限于此),电容式触摸屏110可具有沿第一方向设置的多个驱动电极以及沿第二方向设置的多个传感电极(图1未示),其中所述多个驱动电极设置在一电极层(图1未示),所述多个传感电极设置在另一电极层(图1未示)。各传感节点可位于(但不限于)电容式触摸屏110之中一驱动电极与一传感电极的交叉处。当触摸事件TE发生(诸如触摸物体碰触或接近电容式触摸屏110)时,电容式触摸屏110的一个或多个传感节点可回应于触摸事件TE产生电容值变化,以反映出触摸物体的操作行为。
传感电路120耦接到电容式触摸屏110具有的多个传感节点,用以根据一第一输入电压Vin(诸如模拟电压信号或交流电压)来传感各传感节点的电容值变化,以产生一输出电压Vout(诸如模拟电压信号或交流电压)。在此实施例中,传感电路120可包括(但不限于)一第一转换电路122、一第一电流镜电路125及一第二转换电路126。第一转换电路122用以根据第一输入电压Vin将各传感节点积累的电荷转换为第一电流Iout。也就是说,第一转换电路122可对各传感节点积累的电荷进行电荷电流转换操作(charge-to-current conversion)。第一电流镜电路125耦接到第一转换电路122,用以根据第一电流Iout产生第二电流Ix。第二电流Ix可视为第一电流Iout的复制或倍乘,其中第二电流Ix与第一电流Iout之间的比例是可调整的。举例来说,第一电流镜电路125 可具有可编程的增益(programmable gain)。此外,第二转换电路126耦接到第一电流镜电路125,用以至少回应第二电流Ix产生输出电压Vout。
通过第一转换电路122、第一电流镜电路125及一第二转换电路126,传感电路120可先将各传感节点回应于第一输入电压Vin所累积的电荷转换为第一电流Iout,从而根据第一电流Iout的复制(或倍乘)产生输出电压Vout。由于传感电路120可根据第一输入电压Vin的电流转换结果(第一电流Iout或第二电流Ix)进行电荷放大操作,而不是直接利用第一输入电压Vin来进行电荷放大操作,因此,传感电路120可减少输出电压Vout的电压变化范围(诸如峰间值(peak-to-peak value))中来自第一输入电压Vin的电压变化范围(诸如峰间值)的贡献。进一步的说明容后再叙。
处理电路130耦接到传感电路120,用以对输出电压Vout进行信号处理,以侦测触摸事件TE。举例来说(但本公开不限于此)处理电路130可包括一滤波电路132、一模数转换电路134以及一信号处理器136。滤波电路132可对输出电压Vout进行滤波处理,以产生经滤波处理后的电压Vf。举例来说,滤波电路132可由低通滤波器来实施,诸如抗混叠滤波器(anti-alias filter),以降低输出电压Vout中的噪声成分。模数转换电路134可将经滤波处理后的电压Vf转换为数字信号Vd,供信号处理器136进行信号处理。
为方便理解本公开的电容式传感方案,下文以图1所示的电容式触摸屏110中一个传感节点所涉及的自容传感操作来说明。然而,本领域的技术人员应可了解本公开的电容式传感方案可应用至多个传感节点所涉及的自容传感操作,及应用至一个或多个传感节点所涉及的互容传感操作。图2是图1所示的传感电路120的一实施例的示意图。传感电路220可包括(但不限于)一第一转换电路222、一第一电流镜电路225及一第二转换电路226。第一转换电路222、第一电流镜电路225及第二转换电路226可分别用来实施图1所示的第一转换电路122、第一电流镜电路125及第二转换电路126。
第一转换电路222耦接到电容式触摸屏110的一传感节点NS,用以根据第一输入电压Vin将传感节点NS积累的电荷转换为第一电流Iout。传感节点NS耦接到一传感电容C L,其可代表传感节点NS相应的驱动电极与传感电极两者之间所形成的等效电容。此外,第一输入电压Vin可由交流电压来实施,诸如弦波电压。举例来说(但本公开不限于此),以传感电路220的电源电压的峰间值为2.6伏特为例,可采用峰间值为2伏特的交流电压来实施第一输入电压Vin。
在此实施例中,第一转换电路222可包括(但不限于)一电压缓冲器223。电压缓冲器223的输入端BFI用以接收第一输入电压Vin。由于电压缓冲器223的输出端BFO耦接到传感节点NS,因此,电压缓冲器223可根据第一输入电压Vin的缓冲版本(即缓冲电压Vbf)将传感节点NS积累的电荷转换为第一电流Iout。
举例来说(但本公开不限于此),电压缓冲器223可由一电压跟随器来实施,使缓冲电压Vbf可以是第一输入电压Vin的复制品。在此实施例中,所述电压跟随器可由一放大器224来实施,其具有一第一输入端TI11、一第二输入端TI12和输出端TO1。第一输入端TI11用以接收第一输入电压Vin。第二输入端TI12与输出端TO1彼此相接,并耦接到传感节点NS。在此实施例中,传感节点NS与第二输入端TI12之间的信号通路(诸如信号线或导线)的等效电阻可由电阻R L来表示。此外,输出端TO1耦接到第一电流镜电路224,用以输出第一电流Iout。
第一电流镜电路225用以根据第一电流Iout产生第二电流Ix,其可为第一电流Iout的复制或倍乘。值得注意的是,第一电流Iout(其携带了传感节点NS的电荷积累信息)可能是通过输出端TO1流向放大器224内部,而不是流向放大器224外部(诸如从输出端BFO流向第一电流镜电路225)。为了使位于第一转换电路222后端的电路可接收第一电流Iout携带的信息,传感电路220可利用第一电流镜电路225产生流向位于第一转换电路222后端的电路的第二电流Ix,使第一电流Iout所携带的传感节点NS的电荷积累信息可 往后传递,供后端电路(诸如第二转换电路226)处理。
第二转换电路226包括(但不限于)一放大器228和一电阻电容网络229。放大器228具有一第一输入端TI21、一第二输入端TI22和一输出端TO2。第一输入端TI21耦接到一参考电压Vref,诸如共模电压或地电压。第二输入端TI22耦接到第一电流镜电路225,用以接收第一电流Iout的复制或倍乘,即第二电流Ix。输出端TO2用以输出输出电压Vout,供下一级电路(诸如图1所示的处理电路130)使用。
电阻电容网络229耦接于放大器228的第二输入端TI22与输出端TO2之间。在此实施例中,电阻电容网络229可包括(但不限于)一电阻R F与一电容C F。通过将电阻R F与电容C F并联设置在第二输入端TI22与输出端TO2之间,第二转换电路226可放大第二电流Ix中所携带的积累在传感节点NS的电荷信息,并据以产生输出电压Vout。
于操作中,当触摸物件触摸(或接近)电容式触摸屏110时,在传感节点NS的电容值会产生变化,即传感节点NS积累的电荷产生变化。第一转换电路222可根据第一输入电压Vin将传感节点NS积累的电荷转换为第一电流Iout。为简化电路分析,可将第一电流Iout(具有实变量(时间)的函数)变换为具有复变量(complex variable)s的函数。例如,第一电流Iout的拉普拉斯变换(Laplace transform)IOUT(s)等于第一输入电压Vin的拉普拉斯变换VIN(s)与传递函数(transfer function)H1(s)的乘积,并可由下式(1)表示:
Figure PCTCN2019103312-appb-000001
其中CL表示传感节点NS的电容值,RL表示电阻R L的电阻值。
第二转换电路226可回应第二电流Ix(第一电流Iout的复制或倍乘)产生输出电压Vout。在第二电流Ix是第一电流Iout的复 制的实施例中,输出电压Vout的拉普拉斯变换VOUT(s)可由拉普拉斯变换IOUT(s)与传递函数H2(s)的乘积来表示:
Figure PCTCN2019103312-appb-000002
其中CF表示电容C F的电容值,RF表示电阻R F的电阻值。
将式(1)代入式(2),可得到反映出拉普拉斯变换VOUT(s)与拉普拉斯变换VIN(s)之间的映射关系的传递函数H3(s):
Figure PCTCN2019103312-appb-000003
相比于直接利用第一输入电压Vin来进行电荷放大操作的方式,传感电路220可根据第一输入电压Vin的电流转换结果(诸如第一电流Iout的复制(或倍乘))进行电荷放大操作,从而大幅减少第一输入电压Vin的电压变化范围(诸如峰间值)在输出电压Vout的电压变化范围(诸如峰间值)中所占的比例。举例来说,图3示出了直接采用第一输入电压Vin施加至传感节点NS所产生的电流信号来进行电荷放大操作的实施方式。在图3所示的传感电路320中,输出电压Vout的拉普拉斯变换VOUT(s)可由Vin的拉普拉斯变换VIN(s)与传递函数H4(s)的乘积来表示。
Figure PCTCN2019103312-appb-000004
值得注意的是,传感节点NS上积累的电荷会随第一输入电压Vin的电压电平的变化而变化,造成传感节点NS的电容值变化以及第一电流Iout的电流电平的变化,从而改变输出电压Vout的电压电平。因此,拉普拉斯变换VIN(s)与传递函数H3(s)的乘积,可对应于传感节点NS的电容值变化回应第一输入电压Vin而生成的电压变化范围,而拉普拉斯变换VIN(s)则是对应于第一输入电压Vin的电压变化范围。
在传感电路320的电源电压的电压变化范围(峰间值)为(但不限于)2.6伏特,以及输出电压Vout的电压变化范围(峰间值)设定在(但不限于)2伏特以维持电路运作的情形下,由于传递函数H3(s)的绝对值通常远小于1,使输出电压Vout的2伏特电压变化范围大部分是来自第一输入电压Vin的电压变化范围(峰间值;对应于拉普拉斯变换VIN(s))的贡献。传感节点NS的电容值变化相应的电压变化范围(对应于拉普拉斯变换VIN(s)与传递函数H3(s)的乘积)在此2伏特电压变化范围占的比例相对较小。例如,第一输入电压Vin的电压变化范围占输出电压Vout的电压变化范围的80%,而传感节点NS的电容值变化的相应的电压变化范围仅占输出电压Vout的电压变化范围的20%。即使通过增大第一输入电压Vin的振幅以增大传感节点NS的电容值变化相应的电压变化范围,由于电源电压的电压变化范围的限制,第一输入电压Vin的振幅所增加的幅度有限,造成输出电压Vout的电压变化范围中来自传感节点NS的电容值变化的贡献没办法进一步增加。
相比之下,在图2所示的实施例中,在传感电路220的电源电压的电压变化范围(峰间值)为(但不限于)2.6伏特,以及输出电压Vout的电压变化范围(峰间值)设定在(但不限于)2伏特以维持电路运作的情形下,由于拉普拉斯变换VOUT(s)等于拉普拉斯变换VIN(s)与传递函数H3(s)的乘积,而不是与传递函数H4(s)(1与传递函数H3(s)的相加结果)的乘积,因此,输出电压Vout的2伏特电压变化范围即是传感节点NS的电容值变化相应的电压变化范围。也就是说,本公开的电容式传感方案可大幅减少第一输入电压Vin的电压变化范围在输出电压Vout的电压变化范围中所占的比例,故可增加输出电压Vout的电压变化范围中来自传感节点NS的电容值变化的贡献。此外,在某些实施例中,还可通过增加电阻R F的电阻值,进一步增加传感节点NS的电容值变化相应的电压变化范围。
图4是图1所示的传感电路120的另一实施例的示意图。图4所示的传感电路420的结构与图2所示的传感电路220大致相同/ 相似,两者的差别在于传感电路420还包括补偿电路结构,以更准确地取得在传感节点NS的电容值变化。举例来说,当触摸事件TE发生时(诸如触摸物件触摸/接近电容式触摸屏110),传感节点NS可回应触摸事件TE产生电容值变化,其可由传感电容C L并联电容ΔC L来表示。传感电路420可采用补偿电路结构以更准确地取得电容ΔC L的相关信息。
在此实施例中,传感电路420还包括(但不限于)一辅助电容C A、一第三转换电路442及一第二电流镜电路445,其中辅助电容C A、第三转换电路442及第二电流镜电路445可作为传感电路420的补偿电路结构的至少一部分。例如,第一转换电路222、第一电流镜电路225、第二转换电路226、辅助电容C A、第三转换电路442及第二电流镜电路445可实施在同一芯片上。
辅助电容C A的电容值可等于在触摸事件TE发生之前传感节点NS具有的电容值,诸如传感电容C L的电容值。第三转换电路442用以根据一第二输入电压VA将辅助电容C A积累的电荷转换为一第三电流IA,其中第二输入电压VA具有与第一输入电压Vin的相位相反的相位。举例来说,在第一输入电压Vin由弦波电压来实施的情形下,第二输入电压VA可以是与第一输入电压Vin的相位相差180度的弦波电压,其中第一输入电压Vin与第二输入电压VA可具有相同的振幅。
第三转换电路442的电路结构可与第一转换电路222的电路结构大致相同,以模拟在触摸事件TE发生之前,第一转换电路222回应传感节点NS所积累的电荷产生电流信号的情形。在此实施例中,第三转换电路442可包括一电阻R A及一电压缓冲器443。电阻R A的电阻值可等于电阻R L的电阻值。电压缓冲器443可由一放大器444来实施,其具有一第一输入端TI31、一第二输入端TI32和输出端TO3。第一输入端TI31用以接收第二输入电压VA。第二输入端TI32与输出端TO3彼此相接,并通过电阻R A耦接到辅助电容C A。此外,输出端TO3用以输出第三电流IA。
第二电流镜电路445耦接到第三转换电路442,用以根据第三电流IA产生第四电流Iy,其为第三电流IA的复制或倍乘。第二电流镜电路445的电流增益可与第一电流镜电路225的电流增益相同/相似。举例来说,第二电流镜电路445的电流增益与第一电流镜电路225的电流增益之间的差值,可以是第一电流镜电路225的电流增益的10%、5%、1%或0.5%内。
于操作中,当触摸事件TE发生时,除了携带电容值变化的第二电流Ix传送到第二转换电路226以外,携带在触摸事件TE发生之前的电容值信息的第四电流Iy也可传送到第二转换电路226。第二转换电路226可回应第二电流Ix和第四电流Iy产生输出电压Vout。值得注意的是,由于第二输入电压VA与第一输入电压Vin彼此振幅相同但相位相反,且辅助电容C A与传感电容C L彼此可具有相同的电容值,因此,第三电流IA与第一电流Iout中传感电容C L回应第一输入电压Vin所产生的电流成分彼此振幅相同但相位相反。也就是说,第三转换电路442产生的第三电流IA可用来消除/减少在触摸事件TE发生之前传感电容C L回应第一输入电压Vin所产生的电流。这样,第二电流镜电路445产生的第四电流Iy可用来消除/减少在第二电流Ix中传感电容C L回应第一输入电压Vin所产生的电流成分,使第二转换电路226产生的输出电压Vout所携带的信息大部分可来自电容ΔC L的电容值变化。
在某些实施例中,第一电流镜电路225可适应性地调整第二电流Ix与第一电流Iout之间的比例,从而提高传感品质。举例来说,当周遭环境的噪声较大时,第一电流镜电路225可根据一控制信号CS来减少电流增益,其中控制信号CS可由后端电路(诸如图1所示的信号处理器136)通过噪声侦测来产生。在某些实施例中,在第一电流镜电路225可根据控制信号CS调整第二电流Ix与第一电流Iout之间的比例的情形下,第二电流镜电路445也可根据控制信号CS调整第四电流Iy与第三电流IA之间的比例。
值得注意的是,以上所述是出于说明的目的,并非用来限制本 公开。举例来说,第一转换电路222可采用其他电荷电流转换器(charge-to-current converter)来实施。也就是说,只要是可根据第一输入电压Vin来对传感节点NS积累的电荷进行转换以产生第一电流Iout的转换电路,设计上相关的变化均在本公开的范围内。
本公开的电容式传感方案可简单归纳为图5所示的流程图。图5是本公开电容式触摸屏的传感方法的一实施例的流程图。假若所得到的结果实质上大致相同,则步骤不一定要按照图5所示的顺序来进行。举例来说,某些步骤可安插于其中。为了方便说明,以下搭配图4所示的电容式触摸屏110和传感电路420来说明图5所示的传感方法。然而,将图5所示的传感方法应用于图1所示的传感电路120和/或图2所示的传感电路220均是可行的。图5所示的传感方法可简单归纳如下。
步骤502:根据一第一输入电压将所述电容式触摸屏的一传感节点积累的电荷转换为一第一电流。例如,第一转换电路222将传感节点NS积累的电荷转换为第一电流Iout。
步骤504:利用一第一电流镜电路接收所述第一电流以产生一第二电流,其中所述第二电流是所述第一电流的复制或倍乘。例如,利用第一电流镜电路225接收第一电流Iout以产生第二电流Ix。
步骤506:至少回应所述第二电流产生一输出电压。例如,第二转换电路226至少回应第二电流Ix来产生输出电压Vout。在某些实施例中,传感节点NS的电容值变化回应第一输入电压Vin而生成的电压变化范围,等于输出电压Vout的电压变化范围。也就是说,传感节点NS的电容值变化会随第一输入电压Vin而造成传感节点NS上积累的电荷的变化,
在步骤502中,可将所述第一输入电压耦接到一电压缓冲器的一输入端,以及将所述传感节点耦接到所述电压缓冲器的一输出端,以将所述传感节点积累的电荷转换为所述第一电流。例如,可从第一转换电路222中的电压缓冲器223的输入端BFI接收第一输入电压Vin,并可将传感节点NS耦接到电压缓冲器223的输出端BFO,以将传感节点NS积累的电荷转换为第一电流Iout。
在某些实施例中,本公开的电容式传感方案还可通过电流补偿,更准确地取得在传感节点回应触摸事件所产生的电容值变化。例如,在步骤506中,第三转换电路442可根据第二输入电压VA将辅助电容C A积累的电荷转换为第三电流IA,其中第二输入电压VA具有与第一输入电压Vin的相位相反的相位,以及辅助电容C A的电容值等于在触摸事件TE发生之前传感节点NS具有的电容值(诸如传感电容C L的电容值)。第二电流镜电路445接收第三电流IA以产生第四电流Iy。接下来,第二转换电路226可回应第二电流Ix和第四电流Iy来产生输出电压Vout,其所携带的信息大部分可来自电容ΔC L的电容值变化。
由于本领域的技术人员通过阅读图1到图4相关的段落说明之后,应可了解图5所示的传感方法中每一步骤的细节,因此进一步的说明在此便不再赘述。
通过电荷电流转换操作,本公开的电容式传感方案可大幅减少输入电压变化范围在输出电压变化范围中所占的比例。此外,通过具有可编程增益的电流镜电路,和/或补偿电路结构,本公开的电容式传感方案可进一步提高传感品质。
以上所述仅为本公开的实施例而已,并不用于限制本公开,对于本领域的技术人员来说,本公开可以有各种更改和变化。凡在本公开的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本公开的保护范围之内。

Claims (16)

  1. 一种电容式触摸屏的传感电路,其特征在于,包括:
    第一转换电路,耦接到所述电容式触摸屏的传感节点,用以根据第一输入电压将所述传感节点积累的电荷转换为第一电流;
    第一电流镜电路,耦接到所述第一转换电路,用以根据所述第一电流产生第二电流,其中所述第二电流是所述第一电流的复制或倍乘;以及
    第二转换电路,耦接到所述第一电流镜电路,用以至少回应所述第二电流产生输出电压。
  2. 如权利要求1所述的传感电路,其特征在于,所述第一转换电路包括电压缓冲器;所述电压缓冲器的输入端用以接收所述第一输入电压;所述电压缓冲器的输出端耦接到所述传感节点和所述第一电流镜电路,用以输出所述第一电流。
  3. 如权利要求1所述的传感电路,其特征在于,所述第一转换电路包括电压跟随器;所述电压跟随器的第一输入端用以接收所述第一输入电压;所述电压跟随器的第二输入端耦接到所述传感节点;所述电压跟随器的输出端耦接到所述第一电流镜电路,用以输出所述第一电流;所述电压跟随器的第二输入端与所述电压跟随器的输出端彼此相接。
  4. 如权利要求1至3中任一项所述的传感电路,其特征在于,所述传感节点的电容值变化回应所述第一输入电压而生成的电压变化范围,等于所述输出电压的电压变化范围。
  5. 如权利要求1至3中任一项所述的传感电路,其特征在于,所述第一电流镜电路具有可编程的增益。
  6. 如权利要求1至3中任一项所述的传感电路,其特征在于,所述第二转换电路包括:
    放大器,具有第一输入端、第二输入端和输出端,其中所述第一输入端耦接到参考电压,所述第二输入端耦接到所述第一电流镜电路,所述输出端用以输出所述输出电压;以及
    电阻电容网络,耦接于所述第二输入端与所述输出端之间。
  7. 如权利要求1至3中任一项所述的传感电路,其特征在于,所述传感节点回应于所述电容式触摸屏上的触摸事件产生电容值变化,所述传感电路还包括:
    辅助电容,其中所述辅助电容的电容值等于在所述触摸事件发生之前所述传感节点具有的电容值;
    第三转换电路,用以根据第二输入电压将所述辅助电容积累的电荷转换为第三电流,其中所述第二输入电压具有与所述第一输入电压的相位相反的相位;以及
    第二电流镜电路,耦接到所述第三转换电路,用以根据所述第三电流产生第四电流;
    其中所述第二转换电路用以回应所述第二电流和所述第四电流产生所述输出电压。
  8. 如权利要求7所述的传感电路,其特征在于,所述第二输入电压与所述第一输入电压具有相同的振幅。
  9. 如权利要求1至3中任一项所述的传感电路,其特征在于,所述第一电流与所述第一输入电压之间的关系由下式表示:
    Figure PCTCN2019103312-appb-100001
    其中IOUT(s)是所述第一电流的拉普拉斯变换,VIN(s)是所述第一输入电压的拉普拉斯变换,CL是所述传感节点的电容值,RL是所述传感节点与所述第一转换电路之间的信号通路的电阻值。
  10. 如权利要求9所述的传感电路,其特征在于,所述第二转换电路包括放大器、电阻和电容;所述放大器的第一输入端耦接到参考电压;所述电阻与电容并联于所述放大器的第二输入端与所述放大器的输出端之间;所述放大器的输出端用以输出所述输出电压;所述输出电压与所述第一输入电压之间的关系由下式表示:
    Figure PCTCN2019103312-appb-100002
    其中VOUT(s)是所述输出电压的拉普拉斯变换,RF是所述电阻的电阻值,CF是所述电容的电容值。
  11. 一种电容式传感系统,其特征在于,包括。
    电容式触摸屏,具有传感节点,所述传感节点回应于所述电容式触摸屏上的触摸事件产生电容值变化;以及
    至少一如权利要求1至10中任一项所述的传感电路,用以传感所述电容值变化。
  12. 一种电容式触摸屏的传感方法,其特征在于,包括:
    根据第一输入电压将所述电容式触摸屏的传感节点积累的电荷转换为第一电流;
    利用第一电流镜电路接收所述第一电流以产生第二电流,其中所述第二电流是所述第一电流的复制或倍乘;以及
    至少回应所述第二电流产生输出电压。
  13. 如权利要求12所述的传感方法,其特征在于,根据所述第一输入电压将所述传感节点积累的电荷转换为所述第一电流的步骤包括:
    将所述第一输入电压耦接到电压缓冲器的输入端;以及
    将所述传感节点耦接到所述电压缓冲器的输出端,以将所述传感节点积累的电荷转换为所述第一电流。
  14. 如权利要求12或13所述的传感方法,其特征在于,所述传感节点的电容值变化回应所述第一输入电压而生成的电压变化范围,等于所述输出电压的电压变化范围。
  15. 如权利要求12或13所述的传感方法,其特征在于,所述传感节点回应于所述电容式触摸屏上的触摸事件产生电容值变化;至少回应所述第二电流产生所述输出电压的步骤包括:
    根据第二输入电压将辅助电容积累的电荷转换为第三电流,其中所述第二输入电压具有与所述第一输入电压的相位相反的相位,以及所述辅助电容的电容值等于在所述触摸事件发生之前所述传感节点具有的电容值;
    利用第二电流镜电路接收所述第三电流以产生第四电流;以及
    回应所述第二电流和所述第四电流产生所述输出电压。
  16. 如权利要求15所述的传感方法,其特征在于,所述第二输入电压与所述第一输入电压具有相同的振幅。
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102023737A (zh) * 2009-09-21 2011-04-20 奇景光电股份有限公司 电流式触控面板的读取装置
WO2016130070A1 (en) * 2015-02-11 2016-08-18 Fingerprint Cards Ab Capacitive fingerprint sensing device with current readout from sensing elements
CN107544703A (zh) * 2016-06-28 2018-01-05 瑞萨电子株式会社 半导体装置、位置检测装置和半导体装置的控制方法
CN109214252A (zh) * 2017-07-06 2019-01-15 敦泰电子有限公司 一种指纹感测电路及指纹感测装置
CN109976565A (zh) * 2017-12-27 2019-07-05 联咏科技股份有限公司 用于处理来自触控面板的感测信号的信号处理电路

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9817509B2 (en) * 2015-10-30 2017-11-14 Solomon Systech Limited Methods and apparatuses for providing sensing signals for projected capacitive touch sensing using a differential current mode analog circuit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102023737A (zh) * 2009-09-21 2011-04-20 奇景光电股份有限公司 电流式触控面板的读取装置
WO2016130070A1 (en) * 2015-02-11 2016-08-18 Fingerprint Cards Ab Capacitive fingerprint sensing device with current readout from sensing elements
CN107544703A (zh) * 2016-06-28 2018-01-05 瑞萨电子株式会社 半导体装置、位置检测装置和半导体装置的控制方法
CN109214252A (zh) * 2017-07-06 2019-01-15 敦泰电子有限公司 一种指纹感测电路及指纹感测装置
CN109976565A (zh) * 2017-12-27 2019-07-05 联咏科技股份有限公司 用于处理来自触控面板的感测信号的信号处理电路

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