WO2021033848A1

WO2021033848A1 - Apparatus for preparing wafer polishing pad and method for preparing wafer polishing pad using same

Info

Publication number: WO2021033848A1
Application number: PCT/KR2019/016909
Authority: WO
Inventors: 성재철
Original assignee: 에스케이실트론 주식회사
Priority date: 2019-08-22
Filing date: 2019-12-03
Publication date: 2021-02-25
Also published as: KR20210023134A

Abstract

The present invention provides an apparatus, for preparing a wafer polishing pad, comprising: a polishing pad which has an upper pad having a plurality of lattice grooves and a lower pad attached to the bottom part of the upper pad; a first roller around which the polishing pad is wound; a buffing roller for buffing the upper pad of the polishing pad; and a second roller for feeding the polishing pad which is wound around the first roller to the buffing roller and discharging the buffed polishing pad, wherein the buffing roller and second roller rotate in the same direction.

Description

Wafer polishing pad manufacturing apparatus and method of manufacturing wafer polishing pad using the same

The present invention relates to a wafer manufacturing apparatus, and more particularly, to a manufacturing apparatus and a manufacturing method of a polishing pad used for wafer polishing.

Single crystal silicon ingots are generally grown and manufactured according to the Czochralski method. In this method, polycrystal is melted in a crucible in a chamber, a single crystal seed crystal is immersed in the molten silicon, and then grown into a single crystal silicon ingot (hereinafter, referred to as an ingot) of a desired diameter while gradually increasing it. That's the way.

The manufacturing process of a single silicon wafer includes a single crystal growing process for making an ingot using the method described above, a slicing process for obtaining a thin disk-shaped wafer by slicing the ingot, and , Edge grinding process to process the outer periphery of the wafer obtained by the slicing process to prevent cracking and distortion, and improve the flatness of the wafer by removing damage caused by mechanical processing remaining on the wafer. It consists of a lapping process for making the wafer, a polishing process for mirroring the wafer, and a cleaning process for removing abrasives or foreign substances attached to the polished wafer.

Among these, the wafer polishing process may be performed through several steps such as primary polishing, secondary polishing, and third polishing, and may be performed through a wafer polishing apparatus.

A typical wafer polishing apparatus may include a surface plate to which a polishing pad is attached, a polishing head that surrounds the wafer and rotates on the surface plate, and a slurry spray nozzle that supplies slurry to the polishing pad.

During the polishing process, the platen can be rotated by the platen rotation axis, and the polishing head can be rotated in close contact with the polishing pad by the head rotational axis. At this time, the slurry supplied by the slurry spraying nozzle may penetrate the wafer positioned on the polishing head to polish the wafer in contact with the polishing pad.

In the final polishing process, the FP (Final Polishing) process, a porous polishing pad having a plurality of pores is used to remove damage from the wafer surface. Since the porous polishing pad generates surface tension on the contact surface with the wafer, grating grooves may be formed on the surface in order to supply smooth slurry to the wafer surface.

Meanwhile, the wafer polishing pad is manufactured by combining an upper pad having a grating groove, an upper pad and a lower pad made of a different material. In general, the upper pad has a front portion processed by a buffing roller to form a grating groove, and then a lower pad is adhered to the rear portion of the upper pad.

At this time, since the upper pad has a very thin thickness, it was manufactured by supplying the upper pad in a direction that meshes with the rotation direction of the buffing roller in order to reduce the frictional force with the buffing roller.

In the wafer polishing pad manufactured in this way, particles are generated during the buffing process, contaminating the wafer polishing apparatus, and buffing residues remain in the grating grooves of the upper pad, thereby deteriorating quality.

In addition, there have been attempts to supply the upper pad in a direction parallel to the rotation direction of the buffing roller for speed and efficiency of buffing processing, but as described above, since the upper pad is very thin, processing is practically impossible.

Accordingly, an object of the present invention is to provide an apparatus for manufacturing a wafer polishing pad and a method for manufacturing a wafer polishing pad using the same, which can increase the buffing speed and efficiency of the wafer polishing pad and simplify the manufacturing process.

In addition, the present invention is a wafer polishing pad manufacturing apparatus capable of suppressing the generation of particles in a wafer polishing manufacturing apparatus and manufacturing a wafer polishing pad in a clean environment, thereby increasing the life of the wafer polishing manufacturing apparatus and improving the quality of the wafer polishing pad. And a method of manufacturing a wafer polishing pad using the same.

The present invention includes a polishing pad having an upper pad having a plurality of grating grooves and a lower pad coupled to a lower portion of the upper pad; A first roller on which the polishing pad is wound; A buffing roller for buffing the upper pad of the polishing pad; And a second roller for supplying the polishing pad wound around the first roller to the buffing roller and discharging the buffed polishing pad, wherein the buffing roller and the second roller rotate in the same direction as each other. It provides an apparatus for manufacturing a pad.

The second roller and the buffing roller may rotate in a clockwise direction.

It may further include a first intake duct disposed between the polishing pad before buffing and the buffing roller to suck particles generated during buffing.

The first intake duct may include a slot groove that is elongated along the width direction of the polishing pad.

The first intake duct may be disposed to be inclined from top to bottom along the traveling direction of the polishing pad.

The second intake duct may further include a second intake duct disposed between the buffing roller and the polishing pad after buffing to suck particles generated after the buffing.

The second intake duct may include a slot groove that is elongated along the width direction of the polishing pad.

The second intake duct may be disposed to be inclined from top to bottom along a direction opposite to the traveling direction of the polishing pad.

It may further include a cleaning brush for cleaning the buffing roller.

On the other hand, the present invention includes an upper pad having a plurality of grating grooves, a lower pad positioned under the upper pad, and a polishing pad to which the upper pad and the lower pad are adhered; A first roller on which the polishing pad is wound; A buffing roller for buffing the upper pad of the polishing pad; A second roller for supplying a polishing pad wound around the first roller to the buffing roller and discharging the buffed polishing pad; A first intake duct disposed between the polishing pad before buffing and the buffing roller to suck particles generated during buffing; And a second intake duct disposed between the buffing roller after the buffing process and the polishing pad to suck particles generated after the buffing process.

On the other hand, the present invention comprises the steps of: generating a polishing pad by bonding an upper pad having a plurality of grating grooves and the upper pad and the lower pad; Supplying the polishing pad wound around a first roller to a buffing roller by rotating a second roller; And rotating the buffing roller in the same direction as the second roller to buff the upper pad of the polishing pad.

The second roller and the buffing roller may rotate in a clockwise direction.

A first intake step of sucking particles generated during buffing between the polishing pad before buffing and the buffing roller may be further included.

A second intake step of sucking particles generated after the buffing process between the buffing roller and the polishing pad after the buffing process may be further included.

It may further include a buffing roller cleaning step of cleaning the buffing roller with a cleaning brush.

According to the wafer polishing pad manufacturing apparatus of the present invention and a method of manufacturing a wafer polishing pad using the same, the upper pad and the lower pad are adhered in advance and supplied in the same direction as the rotation direction of the buffing roller, thereby increasing friction with the buffing roller and performing buffing. Because of this, the buffing speed and processing efficiency are increased, and the manufacturing process of the wafer polishing pad can be simplified.

In addition, since particles generated in the buffing process can be sucked and removed during the buffing process, a polishing pad can be manufactured in a clean environment, thereby increasing the life of the wafer polishing manufacturing apparatus and improving the quality of the wafer polishing pad.

1 is a schematic side cross-sectional view of an apparatus for manufacturing a wafer polishing pad according to a first embodiment of the present invention.

2 is a schematic side cross-sectional view of an apparatus for manufacturing a wafer polishing pad according to a second embodiment of the present invention.

3 is an enlarged view of a main part of FIG. 2.

4 is a schematic side cross-sectional view of an apparatus for manufacturing a wafer polishing pad according to a third embodiment of the present invention.

5 is an enlarged view of a main part of FIG. 4.

6 is a schematic side cross-sectional view of an apparatus for manufacturing a wafer polishing pad according to a fourth embodiment of the present invention.

Hereinafter, embodiments will be clearly revealed through the accompanying drawings and descriptions of the embodiments. In the description of the embodiment, each layer (film), region, pattern, or structure is "on" or "under" of the substrate, each layer (film), region, pad or patterns. In the case of being described as being formed in, "on" and "under" include both "directly" or "indirectly" formed do. In addition, the standards for the top/top or bottom/bottom of each layer will be described based on the drawings.

In the drawings, the sizes are exaggerated, omitted, or schematically illustrated for convenience and clarity of description. Also, the size of each component does not fully reflect the actual size. Also, the same reference numerals denote the same elements throughout the description of the drawings. Hereinafter, embodiments will be described with reference to the accompanying drawings.

As shown in FIG. 1, the wafer polishing pad manufacturing apparatus 1 of the present embodiment may include a first roller 200, a second roller 300, and a buffing roller 400.

Here, the polishing pad 100 supplied to the wafer polishing pad manufacturing apparatus 1 may be in a state in which the upper pad 110 and the lower pad 120 are bonded.

The upper pad 110 forms an upper layer of the polishing pad 100 and becomes a part for performing polishing while being in contact with the wafer. In more detail, the upper pad 110 (refer to FIG. 3) may include a front portion 101, a rear portion 103, and a plurality of grating grooves 112. Here, the front portion 101 and the rear portion 103 of the upper pad 110 may be coated with a film in which several raw materials are mixed.

The front part 101 may have a horizontal cut surface 102 in a state in which the film coating surface is removed after the buffing process. In the cut surface 102 after the buffing process, the plurality of grating grooves 112 may have an opening area having a desired size. The grating groove 112 may be arranged on the upper pad 110 at regular intervals in a form penetrating through the cut surface 102 and the rear surface 103.

In addition, since the inner walls of the lattice groove 112 are coated with a film, the flow of the slurry can be further increased, and impurities during the formation of the lattice groove 112 can be reduced.

Since the above-described upper pad 110 forms one layer in which the grating groove 112 is formed, it may be referred to as a nap layer of the polishing pad 100. The nap layer 110 may include a porous suede material to have excellent performance in removing and preventing defects in the wafer.

The rear surface 103 of the upper pad 110 may be bonded to the lower pad 120 using an adhesive in a film-coated state.

The lower pad 120 (refer to FIG. 3) may be disposed under the upper pad 110 and attached to the base. The lower pad 120 may be referred to as a non-woven fabric layer of the polishing pad 100. The lower pad 120 may be coupled to the upper pad 110 to support the upper pad 110 so that the upper pad 110 can function stably.

In this way, the polishing pad 100 to which the upper pad 110 and the lower pad 120 are combined may be wound around the first roller 200. The polishing pad 100 before buffing may be wound around the first roller 200, and may be continuously supplied toward the buffing roller 400 while being unwound from the first roller 200 during buffing. The first roller 200 may be referred to as a supply roller.

The buffing roller 400 buffs the upper pad 110 of the polishing pad 100 and may be spaced apart from the first roller 200 by a predetermined distance. Sand paper for buffing may be attached to the outer surface of the buffing roller 400.

The second roller 300 may supply the polishing pad 100 wound around the first roller 200 to the buffing roller 400 and discharge the buffing-processed polishing pad 100. The second roller 300 may be referred to as a transfer roller.

In this case, in the embodiment, the buffing roller 400 and the second roller 300 may rotate in the same direction. For example, when the first roller 200 and the second roller 300 rotate clockwise, the buffing roller 400 may rotate clockwise in the same direction. Of course, the reverse is also possible. In this case, the buffing roller 400 may rotate at the same angular speed as the second roller 300, and the speed may be controlled to be slower or faster as necessary.

In the embodiment, since the polishing pad 100 is reinforced in thickness including the upper pad 110 having a thin thickness and the lower pad 120 coupled to the upper pad 110, the upper pad 110 Compared to the conventional, which was only supplied, it can have strong properties against friction. Accordingly, the present invention can deviate from the conventional form in which only the upper pad 110 is supplied so as to mesh with the rotation direction of the buffing roller 400 in order to reduce the frictional force with the buffing roller 400.

That is, the polishing pad 100 in which the upper pad 110 and the lower pad 120 are combined is supplied in the same direction as the rotation direction of the buffing roller 400, and the buffing process is rapidly performed by strong frictional force, so the buffing speed and processing It is possible to increase the efficiency.

In addition, due to such a manufacturing method, a cumbersome process in which the thinner upper pad 110 has to be combined with the lower pad 120 after the buffing process can be omitted, thereby simplifying the manufacturing process.

FIG. 2 is a schematic cross-sectional side view of an apparatus for manufacturing a wafer polishing pad according to a second embodiment of the present invention, and FIG. 3 is an enlarged view of a main part of FIG. 2. In the present embodiment, in order to avoid redundant descriptions, parts different from the above-described embodiment will be mainly described.

2 and 3, the wafer polishing pad manufacturing apparatus 1a of the present embodiment further includes a first intake duct 500.

Meanwhile, during the buffing process, particles P generated from the upper pad 110 and the buffing roller 400 may be scattered between the upper pad 110 and the buffing roller 400 due to a strong frictional force. These particles P may cause defects in the polishing pad 100 or contaminate the wafer polishing pad manufacturing apparatus 1a.

Therefore, the first intake duct 500 may be disposed between the polishing pad 100 before buffing and the buffing roller 400 to suck and remove particles P generated during buffing.

In this case, the first intake duct 500 may include a slot groove 501 that is elongated along the width direction of the polishing pad 100. Particles P introduced into the slot groove 501 may be discharged to the outside along the inner space.

The first intake duct 500 may be disposed to be inclined from the top to the bottom along the traveling direction of the polishing pad 100. The position and inclination angle of the first intake duct 500 is an arrangement structure that considers the path of the scattering particles P, and the suction performance of the particles P may be improved.

4 is a schematic cross-sectional side view of an apparatus for manufacturing a wafer polishing pad according to a third embodiment of the present invention, and FIG. 5 is an enlarged view of a main part of FIG. 4. In the present embodiment, in order to avoid redundant descriptions, parts different from the above-described embodiment will be mainly described.

4 and 5, the wafer polishing pad manufacturing apparatus 1b of the present embodiment further includes a second intake duct 600 as well as a first intake duct 500.

Likewise, during the buffing process, particles P generated from the upper pad 110 and the buffing roller 400, etc., between the upper pad 110 and the buffing roller 400 due to strong frictional force are carried out after the buffing process. It can also scatter toward (100).

Accordingly, the second intake duct 600 is disposed between the buffing roller 400 and the polishing pad 100 after the buffing process, so as to suck the particles P generated after the buffing process.

Similarly, the second intake duct 600 may include a slot groove 601 that is elongated along the width direction of the polishing pad 100, and the second intake duct 600 is used to increase the intake efficiency of the particles P. May be disposed to be inclined from top to bottom along a direction opposite to the traveling direction of the polishing pad 100.

6 is a schematic side cross-sectional view of an apparatus for manufacturing a wafer polishing pad according to a fourth embodiment of the present invention. In the present embodiment, in order to avoid redundant descriptions, parts different from the above-described embodiment will be mainly described.

As shown in FIG. 6, the wafer polishing pad manufacturing apparatus 1c of this embodiment may further include a cleaning brush 700 for cleaning the buffing roller 400 in addition to the configuration of the third embodiment 1b. .

During the buffing process of the buffing roller 400, particles P may be attached to the surface, and these particles P may scatter and contaminate the polishing pad 100 and the apparatus. In addition, it is possible to impair the buffing processing performance by making the surface of the buffing roller 400 uneven.

Accordingly, the cleaning brush 700 may rotate in the same or opposite direction as the rotation direction of the buffing roller 400. In this case, the cleaning brush 700 may remove particles P adhered to the surface of the buffing roller 400 while rubbing against the surface of the buffing roller 400. While scattering the removed particles P, they may be removed while being sucked by the first intake duct 500 or the second intake duct 600 described above.

Of course, the above-described cleaning brush 700 may be applied not only to the fourth embodiment but also to the first to third embodiments described above.

Using the wafer polishing

pad manufacturing apparatuses

1, 1a, 1b, and 1c including the above-described configuration, in the present embodiment, the wafer polishing pad 100 can be manufactured in the following manner.

First, an upper pad 110 having a plurality of grating grooves 112 and a lower pad 120 may be bonded to the upper pad 110 to generate the polishing pad 100. Through the above steps, the polishing pad 100 may secure physical properties that can sufficiently withstand the frictional force.

Subsequently, the polishing pad 100 to which the upper pad 110 and the lower pad 120 are combined may be wound around the first roller 200.

The step of supplying the polishing pad 100 wound around the first roller 200 to the buffing roller 400 by rotating the second roller 300 is followed.

At this time, a step of buffing the upper pad 110 of the polishing pad 100 by rotating the buffing roller 400 in the same direction as the second roller 300 is performed. For example, the first roller 200 and the second roller 300 may rotate in a clockwise direction, and the buffing roller 400 may also rotate in a clockwise direction.

Meanwhile, between the polishing pad 100 and the buffing roller 400 before the buffing process, a first intake step of sucking the particles P generated during the buffing process may be further included.

In addition, a second intake step of sucking the particles P generated after the buffing process may be further included between the buffing roller 400 and the polishing pad 100 after the buffing process.

Meanwhile, a cleaning step of the buffing roller 400 for cleaning the buffing roller 400 with the cleaning brush 700 may be further included.

As described above, according to the wafer polishing pad manufacturing apparatus and method of manufacturing a wafer polishing pad using the same, the upper pad and the lower pad are adhered in advance and supplied in the same direction as the rotation direction of the buffing roller, thereby increasing friction with the buffing roller. Since processing can be performed, the buffing speed and processing efficiency are increased, and the manufacturing process of the wafer polishing pad can be simplified.

Features, structures, effects, etc. described in the embodiments above are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Further, the features, structures, effects, etc. illustrated in each embodiment may be combined or modified for other embodiments by a person having ordinary knowledge in the field to which the embodiments belong. Accordingly, contents related to such combinations and modifications should be construed as being included in the scope of the present invention.

The wafer polishing pad manufacturing apparatus of the present invention and a method of manufacturing a wafer polishing pad using the same can be used in a semiconductor wafer manufacturing apparatus.

Claims

A polishing pad having an upper pad having a plurality of grating grooves and a lower pad coupled to a lower portion of the upper pad;

A first roller on which the polishing pad is wound;

A buffing roller for buffing the upper pad of the polishing pad; And

And a second roller for supplying a polishing pad wound around the first roller to the buffing roller, and discharging the buffed polishing pad,

The apparatus for manufacturing a wafer polishing pad in which the buffing roller and the second roller rotate in the same direction.
The method of claim 1,

The second roller and the buffing roller are a wafer polishing pad manufacturing apparatus that rotates in a clockwise direction.
The method of claim 2,

A wafer polishing pad manufacturing apparatus further comprising: a first intake duct disposed between the polishing pad before buffing and the buffing roller to suck particles generated during buffing.
The method of claim 3,

The apparatus for manufacturing a wafer polishing pad, wherein the first intake duct includes a slot groove extending along a width direction of the polishing pad.
The method of claim 4,

The apparatus for manufacturing a wafer polishing pad in which the first intake duct is disposed inclined from an upper side to a lower side along a traveling direction of the polishing pad.
The method of claim 5,

The wafer polishing pad manufacturing apparatus further comprises a second intake duct disposed between the buffing roller and the polishing pad after the buffing process to suck particles generated after the buffing process.
The method of claim 6,

The second intake duct is an apparatus for manufacturing a wafer polishing pad including a slot groove that is elongated along the width direction of the polishing pad.
The method of claim 7,

The second intake duct is an apparatus for manufacturing a wafer polishing pad that is disposed to be inclined from an upper side to a lower side along a direction opposite to a traveling direction of the polishing pad.
The method according to any one of claims 1 to 8,

An apparatus for manufacturing a wafer polishing pad further comprising a cleaning brush for cleaning the buffing roller.
An upper pad having a plurality of grating grooves, a lower pad positioned under the upper pad, and a polishing pad to which the upper pad and the lower pad are adhered;

A first roller on which the polishing pad is wound;

A buffing roller for buffing the upper pad of the polishing pad;

A second roller for supplying a polishing pad wound around the first roller to the buffing roller and discharging the buffed polishing pad;

A first intake duct disposed between the polishing pad before buffing and the buffing roller to suck particles generated during buffing; And

A wafer polishing pad manufacturing apparatus comprising a second intake duct disposed between the buffing roller after buffing and the polishing pad to suck particles generated after buffing.
Generating a polishing pad by bonding an upper pad having a plurality of grating grooves and the upper pad and the lower pad;

Supplying the polishing pad wound around a first roller to a buffing roller by rotating a second roller; And

And buffing an upper pad of the polishing pad by rotating the buffing roller in the same direction as the second roller.
The method of claim 11,

A method of manufacturing a wafer polishing pad in which the second roller and the buffing roller rotate in a clockwise direction.
The method of claim 12,

A method of manufacturing a wafer polishing pad further comprising a first intake step of sucking particles generated during buffing between the polishing pad before buffing and the buffing roller.
The method of claim 13,

A method of manufacturing a wafer polishing pad further comprising a second intake step of suctioning particles generated after buffing between the buffing roller and the polishing pad after buffing.
The method according to any one of claims 11 to 14,

A method of manufacturing a wafer polishing pad further comprising a buffing roller cleaning step of cleaning the buffing roller with a cleaning brush.