WO2021016838A1 - Image sensor and manufacturing method therefor, chip, and handheld apparatus - Google Patents

Image sensor and manufacturing method therefor, chip, and handheld apparatus Download PDF

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Publication number
WO2021016838A1
WO2021016838A1 PCT/CN2019/098284 CN2019098284W WO2021016838A1 WO 2021016838 A1 WO2021016838 A1 WO 2021016838A1 CN 2019098284 W CN2019098284 W CN 2019098284W WO 2021016838 A1 WO2021016838 A1 WO 2021016838A1
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Prior art keywords
image sensor
layer
metal
capacitor
semiconductor substrate
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PCT/CN2019/098284
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French (fr)
Chinese (zh)
Inventor
赵维民
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深圳市汇顶科技股份有限公司
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Priority to PCT/CN2019/098284 priority Critical patent/WO2021016838A1/en
Priority to CN201980004022.6A priority patent/CN111052385A/en
Publication of WO2021016838A1 publication Critical patent/WO2021016838A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Definitions

  • This application relates to an image sensor, a manufacturing method thereof, a chip and a handheld device using the chip, and more particularly to an image sensor with a polarizing layer, a manufacturing method of the image sensor, an image sensor chip and a handheld device.
  • CMOS image sensors have been mass-produced and applied.
  • CMOS image sensors can be used to implement under-screen optical fingerprint sensing devices.
  • the under-screen optical fingerprint sensing device is set on the back of the display.
  • the light from the front of the display reflects the fingerprint information into the image sensor in the under-screen optical fingerprint sensing device.
  • To interpret fingerprint information In order to improve the accuracy of fingerprint information interpretation, reducing the noise received by the under-screen optical fingerprint sensing device has become an important work item in this field.
  • One of the objectives of this application is to disclose an image sensor, a manufacturing method thereof, a chip, and a handheld device using the chip to solve the above-mentioned problems.
  • An embodiment of the present application discloses an image sensor including a semiconductor substrate and a plurality of pixels, wherein each pixel of the plurality of pixels includes: a photosensitive sensor disposed on the semiconductor substrate; a back-end process stack The device is disposed on the semiconductor substrate, wherein the back-end process stack includes: a plurality of metallization layers; and a capacitor top metal layer, which is disposed on one of the two consecutive metallization layers of the plurality of metallization layers
  • the top metal of the capacitor has a polarizing layer formed by a plurality of metal gate lines, covering the photosensitive sensor.
  • An embodiment of the present application discloses a method for manufacturing an image sensor, including: providing a semiconductor substrate; forming a photosensitive sensor on the semiconductor substrate; forming a first metallization layer on the semiconductor substrate; A polarizing layer is formed in the top metal layer of the capacitor on a metallization layer; and a second metallization layer is formed on the polarizing layer.
  • An embodiment of the application discloses a chip including the above-mentioned image sensor.
  • An embodiment of the present application discloses a handheld device for performing under-screen optical fingerprint sensing, including: a display screen assembly; and the above-mentioned image sensor to obtain fingerprint information of the specific object.
  • the embodiment of the present application adds a polarizing layer to the image sensor, which can improve the accuracy of under-screen optical fingerprint sensing.
  • FIG. 1 is a cross-sectional view of an embodiment of one pixel of the image sensor of this application;
  • FIG. 2 is a cross-sectional view of another embodiment of the image sensor of the application.
  • FIG. 3 is a schematic diagram of an embodiment in which the image sensor of this application is applied to a handheld device
  • FIG. 4 is a cross-sectional view of the image sensor of FIG. 3;
  • FIG. 5 to 8 are top views of the embodiment of the image sensor of FIG. 1;
  • 9 to 12 are top views of embodiments of multiple pixels of the image sensor of this application.
  • FIG. 13 to 16 are schematic diagrams of the manufacturing process of the image sensor shown in FIG. 1.
  • first and second features are in direct contact with each other; and may also include additional components are formed between the above-mentioned first and second features, so that the first and second features may not be in direct contact.
  • content of the present invention may reuse component symbols and/or labels in multiple embodiments. Such repeated use is based on the purpose of brevity and clarity, and does not in itself represent the relationship between the different embodiments and/or configurations discussed.
  • spatially relative terms here such as “below”, “below”, “below”, “above”, “above” and similar, may be used to facilitate the description of the drawing
  • the relationship between one component or feature relative to another component or feature is shown.
  • these spatially relative terms also cover a variety of different orientations in which the device is in use or operation.
  • the device may be placed in other orientations (for example, rotated by 90 degrees or in other orientations), and these spatially-relative description words should be explained accordingly.
  • the under-screen optical fingerprint sensing device is set on the back of the display.
  • the light from the front of the display reflects the fingerprint information into the image sensor in the under-screen optical fingerprint sensing device to read the fingerprint.
  • Information Since the light emitted by part of the display screen directly enters the image sensor of the under-screen optical fingerprint sensor to form a light leakage path, resulting in shot noise, the image sensor of the under-screen optical fingerprint sensor can be provided with a polarizing layer To filter light leakage.
  • This application uses the capacitor top metal (CTM) in the metal-insulator-metal (MIM) capacitor structure to implement a polarizing layer to filter light leakage and increase the accuracy of fingerprint information. The details will be described as follows.
  • the image sensor of the present application can improve the accuracy of the under-screen optical fingerprint sensing device, this use is not a limitation of the present application. In other words, the image sensor of the present application can also be applied to the under-screen optical fingerprint Other occasions besides sensing devices.
  • FIG. 1 is a cross-sectional view of an embodiment of one pixel of the image sensor of this application.
  • the image sensor 100 may include multiple pixels, and the image sensor 100 in FIG. 1 only shows one of the pixels.
  • the image sensor 100 is a front side illumination (FSI) image sensor 100, and includes a semiconductor substrate 102, a back end of line (BEOL) stack 106, and a micro lens 114.
  • the semiconductor substrate 102 may be a bulk semiconductor substrate, such as a bulk silicon substrate or a silicon-on-insulator (SOI) substrate.
  • the photosensitive sensor 104 is disposed on the semiconductor substrate 102.
  • the back-end process stack 106 is disposed on the front side of the semiconductor substrate 102 in the figure.
  • the microlens 114 is disposed on the back-end process stack 106 such that the back-end process stack 106 is between the semiconductor substrate 102 and the microlens 114.
  • a color filter may be additionally formed between the micro lens 114 and the back-end process stack 106.
  • the back-end process stack 106 includes an interlayer dielectric (ILD) layer 108, and the back-end process stack 106 from the bottom (the end close to the semiconductor substrate 102) to the top (the end close to the microlens 102) includes the stack at The metallization layers M1 to MT in the interlayer dielectric layer, where T is the number of metallization layers.
  • the interlayer dielectric layer may be a low-k dielectric (ie, a dielectric with a dielectric constant less than about 3.9) or an oxide.
  • the metallization layers M1 ⁇ MT may be electrically coupled to each other through via holes and may be electrically coupled to the semiconductor substrate 102 through contacts.
  • the metallization layers M1 to MT, through holes, and contacts may be metals, such as aluminum copper, germanium, copper, or some other metals.
  • the back-end process stack 106 can implement a metal-insulator-metal capacitor structure process, that is, the top two metallization layers MT-1 of the metallization layers M1 to MT of the back-end process stack 106 and the metal
  • the middle of the metallization layer MT includes the capacitor top metal layer CTM, and the metallization layer MT-1 (also called the capacitor bottom metal layer (CBM)), the capacitor top metal layer CTM, and the metallization layer MT-1 and the capacitor top metal layer CTM
  • the interlayer dielectric layer in between can jointly form a metal-insulator-metal capacitor structure, and the top metal layer CTM and bottom metal of the capacitor can be coupled to the metallization layer MT.
  • the metallization layer MT-1, the capacitor top metal layer CTM, and the metallization layer MT are not only used to realize the metal-insulator-metal capacitor structure, but the capacitor top metal layer CTM is used to realize the polarizing layer.
  • the top metal layer CTM of the capacitor can be patterned to have a plurality of metal gate lines covering the photosensitive sensor 104 to serve as the polarizing layer 110.
  • the polarizing layer 110 implemented by the metal layer CTM on the top of the capacitor can filter out the light in non-specific directions, so that the microlens 114 enters the image sensor 100.
  • the light that passes through the multiple metal grid lines of the polarizing layer 110 first enters the photosensitive sensor 104 after filtering light that has no specific directionality, instead of all the light passing through the microlens 102 enters the photosensitive sensor 106.
  • the width of the upper metallization layer is restricted and the thicker the width required, and the required spacing is also larger, and the width of the lower metallization layer can be allowed to be thinner ,
  • the required spacing is also small, so the use of a lower metallization layer can form a finer metal grid line, which can meet the size requirements of the metal grid line for the polarizing layer of a specific wavelength.
  • the polarizing layer is implemented in the lower metallization layer, because it is necessary to spread high-density metal grid lines above the photosensitive sensor 104, the density difference between adjacent metallization layers will be too large, which will affect the upper layer.
  • the capacitor top metal layer CTM and the general metallization layers M1-MT have different semiconductor manufacturing process rules. Generally speaking, the capacitor top metal layer CTM is located between the top two metallization layers MT-1 and MT, that is, the farthest
  • the semiconductor substrate 102 has two consecutive metallization layers, but it is allowed to have metal gate lines that are denser than the metallization layers MT-1 and MT, that is, the width of the metal gate line in the metal layer CTM on the top of the capacitor is smaller than that of the metallization layer
  • the metal lines in MT-1 and MT can meet the size requirements of metal grid lines for polarizing layers of specific wavelengths.
  • the use of the metal layer CTM on the top of the capacitor to form the metal gate line will only affect the metallization layer MT of the next layer at most, and the effect is limited, so it is more advantageous than using a lower metallization layer.
  • the metallization layer MT-1 should be kept as clear as possible in the path between the microlens 114 and the photosensitive sensor 104, that is, the metallization layer MT-1 should not be provided with a metal pattern directly under the photosensitive sensor 104 In order to avoid blocking the light, for example, from the top view, the metal pattern does not overlap with the photosensitive sensor 104 in the metallization layer MT-1.
  • the metallization layer MT should be kept as clear as possible in the path between the microlens 114 and the photosensitive sensor 104, that is, the metallization layer MT should not be provided with a metal pattern directly under the photosensitive sensor 104 to avoid blocking the light.
  • the metallization layer MT can be used to control the aperture size.
  • the metallization layer MT is patterned to form a pattern with a specific aperture to control the amount of light entering, that is, the microlens 114 and the photosensitive sensor 104 An aperture 112 is formed therebetween, but the present application is not limited to this, and a structure of using a plurality of metal gate lines of the metal layer CTM on the top of the capacitor to form the polarizing layer 110 may be implemented separately.
  • FIG. 2 is a cross-sectional view of another embodiment of the image sensor of the application.
  • the image sensor 200 of FIG. 2 includes the image sensor 100 of FIG. 1 and a peripheral logic circuit 120.
  • FIG. 2 is only a schematic diagram. In some embodiments, the logic circuit 120 and the image sensor 100 may not be arranged in close proximity as shown in FIG. 2, and may be separated by a certain distance.
  • the logic circuit 120 includes a transistor 122 disposed on the semiconductor substrate 102.
  • the metallization layers M1 to MT in the back-end process stack 106 can be used to connect the transistor 122 to other components (such as the image sensor 100 and/or other transistors not shown).
  • the logic circuit 120 further includes a metal-insulator-metal capacitor 124 with a capacitor lower plate 126 and a capacitor upper plate 128, which are electrically coupled to the metallization layer MT through vias 130 and 132, respectively.
  • the lower capacitor plate 126 is arranged on the metallization layer MT-1, and the upper capacitor plate 128 is arranged on the top metal layer CTM of the capacitor.
  • the application also provides a chip, which can be applied to an under-screen optical fingerprint sensing system, which includes an image sensor 100/200.
  • the present application also provides a handheld device.
  • FIG. 3 is a schematic diagram of an embodiment in which the image sensor of this application is applied to the handheld device. As shown in FIG. 3, the image sensor 100/200 is disposed on the display screen assembly 208 of the handheld device 300. under.
  • the handheld device 300 can be used to perform off-screen optical fingerprint sensing.
  • the handheld device 300 may be any handheld electronic device such as a smart phone, a personal digital assistant, a handheld computer system, or a tablet computer.
  • 4 is a cross-sectional view of FIG. 3. It should be noted that although the image sensor of FIG.
  • the display assembly 208 includes a display panel 202, a polarizer 204, and a protective cover 206.
  • the display panel 202 has a first side 201 and a second side 203 opposite to the first side 201.
  • the polarizer 204 is disposed on the display The second side 203 of the panel 202, and the image sensor 100/200 is arranged on the first side 201 of the display panel 202, so that the display panel 11 is located between the image sensor 100/200 and the polarizer 204, on the polarizer 204, also That is, the outermost layer of the display screen assembly 208 is provided with a protective cover 12 to directly contact the finger 210.
  • the display panel 202 may be an organic electroluminescent display panel (OLED), but the application is not limited to this.
  • OLED organic electroluminescent display panel
  • the display panel 202 will emit light to prompt the user to press the position of the fingerprint on the display assembly 208.
  • the display panel 202 emits Among the light, the light L1 directly directed to the finger 210 is reflected and enters the polarizer 204.
  • the polarizer 204 filters out the light L1RNP in non-specific directions, leaving only part of the light L1RP to enter the image sensor 100.
  • the polarized light The polarizing layer composed of multiple metal grid lines of the polarizer 204 and the polarizing layer 110 has matching characteristics, that is, the polarizing layer composed of multiple metal grid lines of the polarizer 204 and the polarizing layer 110 has the same polarization characteristics, so that it can pass through the polarizer.
  • the light L1RP of 204 may also pass through the polarizing layer formed by a plurality of metal grid lines of the polarizing layer 110.
  • the light L2 directly directed to the image sensor 100 is called light leakage.
  • the light leakage L2 enters the image sensor 100 without passing through the polarizer 204. Therefore, about half of the light L2NP in the light leakage L2 cannot pass through the polarized light.
  • L2 performs fingerprint recognition on the image sensor 100 Interference.
  • a quarter-wave retarder can be provided between the polarizer 204 and the display panel 202 as required, and a quarter-wave retarder can be provided between the display panel 202 and the image sensor 100 as required.
  • One-wave retarder is another quarter-wave retarder.
  • the first side 201 of the display panel 202 may be provided with an anti-reflection layer and/or a buffer layer.
  • FIG. 5 is a top view of an embodiment of the image sensor 100 of FIG. 1.
  • FIG. 1 is a cross-sectional view of the image sensor 100 of FIG. 5 along the cross-sectional line AA′.
  • the polarizing layer composed of multiple metal grid lines of the polarizing layer 110 of the image sensor 100 in FIG. 5 has a vertical grid structure, the multiple metal grid lines have the same length, the width of the metal grid lines is d1, and the adjacent metal grids The centerline spacing of the lines is d2, where d2 is approximately equal to twice d1.
  • FIG. 6 is a top view of another embodiment of the image sensor 100 of FIG. 1.
  • FIG. 1 is a cross-sectional view of the image sensor 100 of FIG. 6 along the cross-sectional line AA′.
  • the polarizing layer composed of multiple metal grid lines of the polarizing layer 110 of the image sensor 100 in FIG. 6 has a vertical grid structure, the width of the metal grid lines is d1, and the centerline spacing of adjacent metal grid lines is d2, where d2 is approximately equal to twice d1.
  • the difference from FIG. 5 is that the lengths of the multiple metal grid lines are not the same, but are set according to the shape and size of the micro lens 114.
  • FIG. 7 is a top view of still another embodiment of the image sensor 100 of FIG. 1.
  • FIG. 1 is a cross-sectional view of the image sensor 100 of FIG. 7 along the cross-sectional line AA′.
  • the polarizing layer composed of multiple metal grid lines of the polarizing layer 110 of the image sensor 100 in FIG. 7 has a grid structure with a 45-degree angle.
  • the multiple metal grid lines have the same length, and the metal grid lines have a width d1 and are adjacent to each other.
  • the centerline spacing of the metal grid lines is d2, where d2 is approximately equal to twice d1.
  • FIG. 8 is a top view of still another embodiment of the image sensor 100 of FIG. 1.
  • FIG. 1 is a cross-sectional view of the image sensor 100 of FIG. 8 taken along the cross-sectional line AA′.
  • the polarizing layer formed by a plurality of metal grid lines of the polarizing layer 110 of the image sensor 100 in FIG. 8 has a grid structure with a 45 degree angle, the width of the metal grid lines is d1, and the centerline spacing of adjacent metal grid lines is d2 , Where d2 is approximately equal to twice d1.
  • the difference from FIG. 7 is that the lengths of the multiple metal grid lines are not the same, but are set according to the shape and size of the micro lens 114.
  • FIG. 9 is a top view of an embodiment of a plurality of pixels of the image sensor of the application.
  • the image sensor in FIG. 9 shows four pixels 100 in FIG. 5;
  • FIG. 10 is a top view of an embodiment of multiple pixels of the image sensor in this application.
  • the image sensor in FIG. 10 shows four pixels 100 in FIG. 6;
  • FIG. 11 is a top view of an embodiment of multiple pixels of the image sensor in this application.
  • the image sensor in FIG. 11 shows four pixels 100 in FIG. 7;
  • FIG. 12 is a top view of an embodiment of multiple pixels of the image sensor in this application.
  • the image sensor in FIG. 12 shows four pixels 100 in FIG. 8. It should be noted that in reality the image sensor may include more than four pixels.
  • the multiple pixels of the image sensor of the present application are not limited to have the same metal gate line.
  • the multiple pixels of the image sensor may have different metal gate line patterns, as shown in the images of FIGS. 5 to 8
  • the sensor 100 can be mixedly arranged to form a plurality of pixels with different metal gate line patterns.
  • 13 to 16 are the manufacturing processes of the image sensor 100 of FIG. 1.
  • the semiconductor substrate 102 is first obtained, and the photosensitive sensor 104 is formed on the semiconductor substrate 102.
  • a back-end process stack is disposed above the front surface of the semiconductor substrate 102, including metallization layers M1 to MT-1 stacked in the interlayer dielectric layer.
  • a sputtering process, an electroplating process, or an evaporation process can be used to form the metallization layers M1 to MT-1.
  • a polarizing layer 110 in the top metal layer CTM of the capacitor is formed according to the desired polarization characteristics.
  • a metallization layer MT is formed on the metallization layer MT-1.
  • the microlens 114 is formed to obtain the image sensor 100 of FIG. 1.
  • a color filter may be additionally formed between the micro lens 114 and the back-end process stack 106.
  • This application uses the metal on the top of the capacitor in the metal-insulator-metal capacitor structure to implement a polarizing layer to filter light leakage and increase the accuracy of fingerprint information interpretation.

Abstract

An image sensor and a manufacturing method therefor, a chip, and a handheld apparatus. The image sensor comprises a semiconductor substrate (102) and multiple pixels, wherein each pixel from among the multiple pixels comprises: a photosensitive sensor (104) arranged on the semiconductor substrate; and a back-end-of-line process stacking member (106) arranged on the semiconductor substrate, wherein the back-end-of-line process stacking member comprises: multiple metalization layers (M1-MT); and a capacitor top metal layer (CTM) arranged between two consecutive metalization layers from among the multiple metalization layers, and capacitor top metal is provided with a polarizing layer (110) formed by multiple metal grid lines and covers the photosensitive sensor.

Description

图像传感器及其制造方法、芯片及手持装置Image sensor and its manufacturing method, chip and handheld device 技术领域Technical field
本申请涉及一种图像传感器及其制造方法、芯片及采用所述芯片的手持装置，尤其涉及一种具偏光层的图像传感器及图像传感器的制造方法、图像传感芯片及手持装置。This application relates to an image sensor, a manufacturing method thereof, a chip and a handheld device using the chip, and more particularly to an image sensor with a polarizing layer, a manufacturing method of the image sensor, an image sensor chip and a handheld device.
背景技术Background technique
CMOS图像传感器已经得到大规模生产和应用，举例来说，CMOS图像传感器可用于实现屏下光学指纹感测装置。CMOS image sensors have been mass-produced and applied. For example, CMOS image sensors can be used to implement under-screen optical fingerprint sensing devices.
一般来说，屏下光学指纹感测装置设置在显示屏背面，当手指接触显示屏的正面，利用显示屏往正面发出的光线将指纹的资讯反射进入屏下光学指纹感测装置中的图像传感器，以判读指纹资讯。为了提高指纹资讯判读的准确度，减少屏下光学指纹感测装置所接收到的噪声已成为本领域的一个重要的工作项目。Generally speaking, the under-screen optical fingerprint sensing device is set on the back of the display. When a finger touches the front of the display, the light from the front of the display reflects the fingerprint information into the image sensor in the under-screen optical fingerprint sensing device. To interpret fingerprint information. In order to improve the accuracy of fingerprint information interpretation, reducing the noise received by the under-screen optical fingerprint sensing device has become an important work item in this field.
发明内容Summary of the invention
本申请的目的之一在于公开一种图像传感器及其制造方法、芯片及采用所述芯片的手持装置，来解决上述问题。One of the objectives of this application is to disclose an image sensor, a manufacturing method thereof, a chip, and a handheld device using the chip to solve the above-mentioned problems.
本申请的一实施例公开了一种图像传感器，包括半导体衬底和多个像素，其中所述多个像素中的每一像素包括：光敏传感器，设置于所述半导体衬底；后端制程堆叠件，设置于所述半导体衬底上，其中所述后端制程堆叠件包括：多个金属化层；以及电容器顶部金属层，设置于所述多个金属化层中的两连续金属化层之间，且所述电容器顶部金属具有多条金属栅线形成的偏光层，覆盖于所述光敏传感器之上。An embodiment of the present application discloses an image sensor including a semiconductor substrate and a plurality of pixels, wherein each pixel of the plurality of pixels includes: a photosensitive sensor disposed on the semiconductor substrate; a back-end process stack The device is disposed on the semiconductor substrate, wherein the back-end process stack includes: a plurality of metallization layers; and a capacitor top metal layer, which is disposed on one of the two consecutive metallization layers of the plurality of metallization layers In addition, the top metal of the capacitor has a polarizing layer formed by a plurality of metal gate lines, covering the photosensitive sensor.
本申请的一实施例公开了一种图像传感器制造方法，包括：提供半导体衬底；于所述半导体衬底形成光敏传感器；于所述半导体衬底上形成第一金属化层；于所述第一金属化层上的电容器顶部金属层中形成偏光层；以及于所述偏光层上形成第二金属化层。An embodiment of the present application discloses a method for manufacturing an image sensor, including: providing a semiconductor substrate; forming a photosensitive sensor on the semiconductor substrate; forming a first metallization layer on the semiconductor substrate; A polarizing layer is formed in the top metal layer of the capacitor on a metallization layer; and a second metallization layer is formed on the polarizing layer.
本申请的一实施例公开了一种芯片，包括上述的图像传感器。An embodiment of the application discloses a chip including the above-mentioned image sensor.
本申请的一实施例公开了一种手持装置，用以执行屏下光学指纹感测，包括：显示屏组件；以及上述的图像传感器，用以获得所述特定对象的指纹信息。An embodiment of the present application discloses a handheld device for performing under-screen optical fingerprint sensing, including: a display screen assembly; and the above-mentioned image sensor to obtain fingerprint information of the specific object.
本申请实施例在图像传感器中增加了偏光层，可改善屏下光学指纹感测的精准度。The embodiment of the present application adds a polarizing layer to the image sensor, which can improve the accuracy of under-screen optical fingerprint sensing.
附图说明Description of the drawings
图1为本申请的图像传感器的其中一个像素的实施例的剖面图；FIG. 1 is a cross-sectional view of an embodiment of one pixel of the image sensor of this application;
图2为本申请的图像传感器的另一实施例的剖面图；2 is a cross-sectional view of another embodiment of the image sensor of the application;
图3为本申请的图像传感器应用于手持装置中的实施例的示意图；FIG. 3 is a schematic diagram of an embodiment in which the image sensor of this application is applied to a handheld device;
图4为图3的图像传感器的剖面图；4 is a cross-sectional view of the image sensor of FIG. 3;
图5至图8为图1的图像传感器的实施例的俯视图；5 to 8 are top views of the embodiment of the image sensor of FIG. 1;
图9至图12为本申请的图像传感器的多个像素的实施例的俯视图；9 to 12 are top views of embodiments of multiple pixels of the image sensor of this application;
图13至图16为图1所示的图像传感器的制造流程示意图。13 to 16 are schematic diagrams of the manufacturing process of the image sensor shown in FIG. 1.
其中，附图标记说明如下：Among them, the reference signs are described as follows:
100、200                 图像传感器100, 200 Image sensor
102                      半导体衬底102 Semiconductor substrate
104                      光敏传感器104 Photosensitive sensor
106                      后端制程堆叠件106 Back-end process stacking parts
108                      层间介电层108 Interlayer dielectric layer
110                      偏光层110 Polarization layer
112                      光圈112 Aperture
114                      微透镜114 Micro lens
M1～MT                   金属化层M1～MT Metalized layer
CBM                      电容器底部金属层CBM Bottom metal layer of capacitor
CTM                      电容器顶部金属层CTM The top metal layer of the capacitor
120                      逻辑电路120 Logic circuit
122                      晶体管122 Transistor
124                      金属-绝缘体-金属电容器124 Metal-Insulator-Metal Capacitor
126                      电容下板126 Capacitor lower board
128                      电容上板128 Capacitor board
130                      通孔130 Through hole
132                      通孔132 Through holes
208                      显示屏组件208 Display assembly
300                      手持装置300 Handheld devices
201                      第一侧201 The first side
202                      显示面板202 Display panel
203                      第二侧203 Second side
204                      偏光片204 Polarizer
206                      保护盖板206 Protective cover
210                      手指210 Fingers
具体实施方式Detailed ways
以下揭示内容提供了多种实施方式或示例，其能用以实现本发明内容的不同特征。下文所述之组件与配置的具体例子系用以简化本发明内容。当可想见，这些叙述仅为例示，其本意并非用于限制本发明内容。举例来说，在下文的描述中，将一第一特征形成于一第二特征上或之上，可能包括某些实施例其中所述的第一与第二特征彼此直接接触；且也可能包括某些实施例其中还有额外的组件形成于上述第一与第二特征之间，而使得第一与第二特征可能没有直 接接触。此外，本发明内容可能会在多个实施例中重复使用组件符号和/或标号。此种重复使用乃是基于简洁与清楚的目的，且其本身不代表所讨论的不同实施例和/或组态之间的关系。The following disclosure provides various embodiments or examples, which can be used to implement different features of the present invention. The specific examples of components and configurations described below are used to simplify the content of the present invention. When it is conceivable, these descriptions are only examples and are not intended to limit the content of the present invention. For example, in the following description, forming a first feature on or on a second feature may include some embodiments where the first and second features are in direct contact with each other; and may also include In some embodiments, additional components are formed between the above-mentioned first and second features, so that the first and second features may not be in direct contact. In addition, the content of the present invention may reuse component symbols and/or labels in multiple embodiments. Such repeated use is based on the purpose of brevity and clarity, and does not in itself represent the relationship between the different embodiments and/or configurations discussed.
再者，在此处使用空间上相对的词汇，譬如「之下」、「下方」、「低于」、「之上」、「上方」及与其相似者，可能是为了方便说明图中所绘示的一组件或特征相对于另一或多个组件或特征之间的关系。这些空间上相对的词汇其本意除了图中所绘示的方位之外，还涵盖了装置在使用或操作中所处的多种不同方位。可能将所述设备放置于其他方位(如，旋转90度或处于其他方位)，而这些空间上相对的描述词汇就应该做相应的解释。Furthermore, the use of spatially relative terms here, such as "below", "below", "below", "above", "above" and similar, may be used to facilitate the description of the drawing The relationship between one component or feature relative to another component or feature is shown. In addition to the orientation shown in the figure, these spatially relative terms also cover a variety of different orientations in which the device is in use or operation. The device may be placed in other orientations (for example, rotated by 90 degrees or in other orientations), and these spatially-relative description words should be explained accordingly.
虽然用以界定本申请较广范围的数值范围与参数皆是约略的数值，此处已尽可能精确地呈现具体实施例中的相关数值。然而，任何数值本质上不可避免地含有因个别测试方法所致的标准偏差。在此处，「约」通常系指实际数值在一特定数值或范围的正负10％、5％、1％或0.5％之内。或者是，「约」一词代表实际数值落在平均值的可接受标准误差之内，视本申请所属技术领域中具有通常知识者的考虑而定。当可理解，除了实验例之外，或除非另有明确的说明，此处所用的所有范围、数量、数值与百分比(例如用以描述材料用量、时间长短、温度、操作条件、数量比例及其他相似者)均经过「约」的修饰。因此，除非另有相反的说明，本说明书与附随申请专利范围所揭示的数值参数皆为约略的数值，且可视需求而更动。至少应将这些数值参数理解为所指出的有效位数与套用一般进位法所得到的数值。在此处，将数值范围表示成由一端点至另一端点或介于二端点之间；除非另有说明，此处所述的数值范围皆包括端点。Although the numerical ranges and parameters used to define the broader scope of the present application are approximate numerical values, the relevant numerical values in the specific embodiments are presented here as accurately as possible. However, any value inherently inevitably contains the standard deviation due to individual test methods. Here, "about" usually means that the actual value is within plus or minus 10%, 5%, 1%, or 0.5% of a specific value or range. Or, the word "about" means that the actual value falls within the acceptable standard error of the average value, depending on the consideration of a person with ordinary knowledge in the technical field to which this application belongs. It should be understood that all ranges, quantities, values and percentages used herein (for example, to describe the amount of material, time length, temperature, operating conditions, quantity ratio and other Similar ones) have been modified by "about". Therefore, unless otherwise stated to the contrary, the numerical parameters disclosed in this specification and the accompanying patent scope are approximate values and can be changed according to requirements. At least these numerical parameters should be understood as the indicated effective number of digits and the value obtained by applying the general carry method. Here, the numerical range is expressed from one end point to the other end point or between the two end points; unless otherwise specified, the numerical range described here includes the end points.
屏下光学指纹感测装置设置在显示屏背面，当手指接触显示屏的正面，利用显示屏往正面发出的光线将指纹的资讯反射进入屏下光学指纹感测装置中的图像传感器，以判读指纹资讯。由于部分显示屏发出的光线直接往背面进入屏下光学指纹感测装置的图像传感器形成漏光路径，产生散粒噪声(shot noise)，因此屏下光学指纹 感测装置的图像传感器可设置有偏光层以过滤漏光。本申请利用金属-绝缘体-金属(MIM)电容器结构中的电容器顶部金属(CTM)来实现偏光层，以过滤漏光，增加判读指纹资讯时的准确度，其细节将描述如下。应注意的是，尽管本申请的图像传感器可改善屏下光学指纹感测装置的精准度，然而此用途并非本申请的限制，换句话说，本申请的图像传感器亦可应用在屏下光学指纹感测装置以外的其他场合。The under-screen optical fingerprint sensing device is set on the back of the display. When a finger touches the front of the display, the light from the front of the display reflects the fingerprint information into the image sensor in the under-screen optical fingerprint sensing device to read the fingerprint. Information. Since the light emitted by part of the display screen directly enters the image sensor of the under-screen optical fingerprint sensor to form a light leakage path, resulting in shot noise, the image sensor of the under-screen optical fingerprint sensor can be provided with a polarizing layer To filter light leakage. This application uses the capacitor top metal (CTM) in the metal-insulator-metal (MIM) capacitor structure to implement a polarizing layer to filter light leakage and increase the accuracy of fingerprint information. The details will be described as follows. It should be noted that although the image sensor of the present application can improve the accuracy of the under-screen optical fingerprint sensing device, this use is not a limitation of the present application. In other words, the image sensor of the present application can also be applied to the under-screen optical fingerprint Other occasions besides sensing devices.
图1为本申请的图像传感器的其中一个像素的实施例的剖面图。应注意的是，图像传感器100可包含多个像素，图1中的图像传感器100仅绘示了其中一个像素。在此实施例中，图像传感器100为正面照明(FSI)图像传感器100，包含半导体衬底102、后端制程(BEOL)堆叠件106以及微透镜114。其中半导体衬底102可以是块状半导体衬底，诸如体硅衬底或绝缘体上硅(SOI)衬底。光敏传感器104设置于半导体衬底102。后端制程堆叠件106被配置在图中半导体衬底102正面。微透镜114被配置在后端制程堆叠件106上，使后端制程堆叠件106在半导体衬底102和微透镜114之间。在某些实施例中，在微透镜114和后端制程堆叠件106之间，可另形成滤色器。FIG. 1 is a cross-sectional view of an embodiment of one pixel of the image sensor of this application. It should be noted that the image sensor 100 may include multiple pixels, and the image sensor 100 in FIG. 1 only shows one of the pixels. In this embodiment, the image sensor 100 is a front side illumination (FSI) image sensor 100, and includes a semiconductor substrate 102, a back end of line (BEOL) stack 106, and a micro lens 114. The semiconductor substrate 102 may be a bulk semiconductor substrate, such as a bulk silicon substrate or a silicon-on-insulator (SOI) substrate. The photosensitive sensor 104 is disposed on the semiconductor substrate 102. The back-end process stack 106 is disposed on the front side of the semiconductor substrate 102 in the figure. The microlens 114 is disposed on the back-end process stack 106 such that the back-end process stack 106 is between the semiconductor substrate 102 and the microlens 114. In some embodiments, a color filter may be additionally formed between the micro lens 114 and the back-end process stack 106.
后端制程堆叠件106包括层间介电(ILD)层108，并且，后端制程堆叠件106从下(靠近半导体衬底102的一端)往上(靠进微透镜102的一端)包括堆叠在层间介电层内的金属化层M1～MT，其中T为金属化层的层数。层间介电层可以是低k电介质(即，介电常数小于约3.9的电介质)或氧化物。金属化层M1～MT可通过通孔相互电耦合并且可通过接触件电耦合至半导体衬底102。金属化层M1～MT、通孔和接触件例如可以是金属，诸如铝铜、锗、铜或一些其他金属。The back-end process stack 106 includes an interlayer dielectric (ILD) layer 108, and the back-end process stack 106 from the bottom (the end close to the semiconductor substrate 102) to the top (the end close to the microlens 102) includes the stack at The metallization layers M1 to MT in the interlayer dielectric layer, where T is the number of metallization layers. The interlayer dielectric layer may be a low-k dielectric (ie, a dielectric with a dielectric constant less than about 3.9) or an oxide. The metallization layers M1 ˜MT may be electrically coupled to each other through via holes and may be electrically coupled to the semiconductor substrate 102 through contacts. The metallization layers M1 to MT, through holes, and contacts may be metals, such as aluminum copper, germanium, copper, or some other metals.
在本实施例中，后端制程堆叠件106可实现金属-绝缘体-金属电容器结构工艺，即，后端制程堆叠件106的金属化层M1～MT的顶部两层金属化层MT-1以及金属化层MT中间又包括电容器顶部 金属层CTM，且金属化层MT-1(又称电容器底部金属层(CBM))、电容器顶部金属层CTM以及金属化层MT-1和电容器顶部金属层CTM之间的层间介电层可共同形成金属-绝缘体-金属电容器结构，且电容器顶部金属层CTM和底部金属可耦接至金属化层MT。In this embodiment, the back-end process stack 106 can implement a metal-insulator-metal capacitor structure process, that is, the top two metallization layers MT-1 of the metallization layers M1 to MT of the back-end process stack 106 and the metal The middle of the metallization layer MT includes the capacitor top metal layer CTM, and the metallization layer MT-1 (also called the capacitor bottom metal layer (CBM)), the capacitor top metal layer CTM, and the metallization layer MT-1 and the capacitor top metal layer CTM The interlayer dielectric layer in between can jointly form a metal-insulator-metal capacitor structure, and the top metal layer CTM and bottom metal of the capacitor can be coupled to the metallization layer MT.
然而，在本实施例中，金属化层MT-1、电容器顶部金属层CTM以及金属化层MT并不仅用来实现金属-绝缘体-金属电容器结构，而是借用电容器顶部金属层CTM来实现偏光层。如图1所示，电容器顶部金属层CTM可被图案化以具有多条金属栅线覆盖于光敏传感器104之上，以做为偏光层110之用。具体来说，依据偏光层110的设计，仅有特定方向的光线才能通过，因此电容器顶部金属层CTM实现的偏光层110可过滤掉非上述特定方向的光线，使从微透镜114进入图像传感器100的光线，会先经过偏光层110的多条金属栅线，过滤不具特定方向性的光线后，才进入光敏传感器104，而非所有经过微透镜102的光线都进入到光敏传感器106。However, in this embodiment, the metallization layer MT-1, the capacitor top metal layer CTM, and the metallization layer MT are not only used to realize the metal-insulator-metal capacitor structure, but the capacitor top metal layer CTM is used to realize the polarizing layer. . As shown in FIG. 1, the top metal layer CTM of the capacitor can be patterned to have a plurality of metal gate lines covering the photosensitive sensor 104 to serve as the polarizing layer 110. Specifically, according to the design of the polarizing layer 110, only light in a specific direction can pass through. Therefore, the polarizing layer 110 implemented by the metal layer CTM on the top of the capacitor can filter out the light in non-specific directions, so that the microlens 114 enters the image sensor 100. The light that passes through the multiple metal grid lines of the polarizing layer 110 first enters the photosensitive sensor 104 after filtering light that has no specific directionality, instead of all the light passing through the microlens 102 enters the photosensitive sensor 106.
以一般半导体制造工艺规则来说，金属化层M1～MT中，越上层的金属化层的宽度被限制越粗，需要的间距也较大，越下层的金属化层的宽度可被允许较细，需要的间距也较小，因此使用较低层的金属化层可形成较细密的金属栅线，方可满足针对特定波长的偏光层的金属栅线的尺寸需求。但在较低层的金属化层实现偏光层时，因为需要在光敏传感器104的上方布满很高密度金属栅线，会造成相邻金属化层之间的密度差距过大，会对更上层的所有金属化层的平整度造成不好的影响。而电容器顶部金属层CTM和一般的金属化层M1～MT具有不同的半导体制造工艺规则，一般来说，电容器顶部金属层CTM位于最顶部两金属化层MT-1和MT之间，即最远离半导体衬底102的连续两金属化层，但却可允许具有较金属化层MT-1和MT更为细密的金属栅线，即电容器顶部金属层CTM中的金属栅线的宽度小于金属化层MT-1和MT中的金属线，可满足针对特定波长的偏光层的金属栅线的尺寸需求。除此之外，使用电容器顶部金属层CTM来形成金属栅线，最多仅会影响更上一层的金属化层MT，影响有限，因此较使用低层的金属化层更为有利。In terms of general semiconductor manufacturing process rules, among the metallization layers M1 to MT, the width of the upper metallization layer is restricted and the thicker the width required, and the required spacing is also larger, and the width of the lower metallization layer can be allowed to be thinner , The required spacing is also small, so the use of a lower metallization layer can form a finer metal grid line, which can meet the size requirements of the metal grid line for the polarizing layer of a specific wavelength. However, when the polarizing layer is implemented in the lower metallization layer, because it is necessary to spread high-density metal grid lines above the photosensitive sensor 104, the density difference between adjacent metallization layers will be too large, which will affect the upper layer. The flatness of all the metallized layers causes a bad influence. The capacitor top metal layer CTM and the general metallization layers M1-MT have different semiconductor manufacturing process rules. Generally speaking, the capacitor top metal layer CTM is located between the top two metallization layers MT-1 and MT, that is, the farthest The semiconductor substrate 102 has two consecutive metallization layers, but it is allowed to have metal gate lines that are denser than the metallization layers MT-1 and MT, that is, the width of the metal gate line in the metal layer CTM on the top of the capacitor is smaller than that of the metallization layer The metal lines in MT-1 and MT can meet the size requirements of metal grid lines for polarizing layers of specific wavelengths. In addition, the use of the metal layer CTM on the top of the capacitor to form the metal gate line will only affect the metallization layer MT of the next layer at most, and the effect is limited, so it is more advantageous than using a lower metallization layer.
在本实施例中，金属化层MT-1应尽量在微透镜114和光敏传感器104之间的路径经过处保持净空，即金属化层MT-1在光敏传感器104正下方的部位不设置金属图案，以避免遮蔽光线，举例来说，从俯视图来看，金属化层MT-1中不具有金属图案和光敏传感器104重叠。相似地，金属化层MT应尽量在微透镜114和光敏传感器104之间的路径经过处保持净空，即金属化层MT在光敏传感器104正下方的部位不设置金属图案，以避免遮蔽光线，然而，在某些实施例中，金属化层MT可用来作为光圈大小的控制，例如图案化金属化层MT以形成具有特定孔径的图案，调控光线进入的量，即在微透镜114和光敏传感器104之间形成光圈112，但本申请不以此为限，亦可单独实施利用电容器顶部金属层CTM的多条金属栅线构成偏光层110的结构。In this embodiment, the metallization layer MT-1 should be kept as clear as possible in the path between the microlens 114 and the photosensitive sensor 104, that is, the metallization layer MT-1 should not be provided with a metal pattern directly under the photosensitive sensor 104 In order to avoid blocking the light, for example, from the top view, the metal pattern does not overlap with the photosensitive sensor 104 in the metallization layer MT-1. Similarly, the metallization layer MT should be kept as clear as possible in the path between the microlens 114 and the photosensitive sensor 104, that is, the metallization layer MT should not be provided with a metal pattern directly under the photosensitive sensor 104 to avoid blocking the light. However, In some embodiments, the metallization layer MT can be used to control the aperture size. For example, the metallization layer MT is patterned to form a pattern with a specific aperture to control the amount of light entering, that is, the microlens 114 and the photosensitive sensor 104 An aperture 112 is formed therebetween, but the present application is not limited to this, and a structure of using a plurality of metal gate lines of the metal layer CTM on the top of the capacitor to form the polarizing layer 110 may be implemented separately.
图2为本申请的图像传感器的另一实施例的剖面图。图2的图像传感器200包括了图1的图像传感器100以及周边的逻辑电路120。图2仅为示意图，在某些实施例中，逻辑电路120和图像传感器100并不一定如图2所示紧邻设置，亦可间隔一段距离。逻辑电路120包括晶体管122设置于半导体衬底102。在后端制程堆叠件106中的金属化层M1～MT可用来将晶体管122和其他组件(如图像传感器100及/或其他未绘示出的晶体管)连接。逻辑电路120另包括金属-绝缘体-金属电容器124，具有电容下板126以及电容上板128，分别藉由通孔130和通孔132电耦合至金属化层MT。其中电容下板126设置在金属化层MT-1，而电容上板128设置在电容器顶部金属层CTM。2 is a cross-sectional view of another embodiment of the image sensor of the application. The image sensor 200 of FIG. 2 includes the image sensor 100 of FIG. 1 and a peripheral logic circuit 120. FIG. 2 is only a schematic diagram. In some embodiments, the logic circuit 120 and the image sensor 100 may not be arranged in close proximity as shown in FIG. 2, and may be separated by a certain distance. The logic circuit 120 includes a transistor 122 disposed on the semiconductor substrate 102. The metallization layers M1 to MT in the back-end process stack 106 can be used to connect the transistor 122 to other components (such as the image sensor 100 and/or other transistors not shown). The logic circuit 120 further includes a metal-insulator-metal capacitor 124 with a capacitor lower plate 126 and a capacitor upper plate 128, which are electrically coupled to the metallization layer MT through vias 130 and 132, respectively. The lower capacitor plate 126 is arranged on the metallization layer MT-1, and the upper capacitor plate 128 is arranged on the top metal layer CTM of the capacitor.
本申请还提供了一种芯片，可以适用于屏下光学指纹感测系统，其包括图像传感器100/200。本申请还提供了一种手持装置，图3为本申请的图像传感器应用于手持装置中的实施例的示意图，如图3所示，图像传感器100/200设置在手持装置300的显示屏组件208之下。手持装置300可用来执行屏下光学指纹感测。其中，手持装置300可为例如智能型手机、个人数字助理、手持式计算机系统或平板计算机等任何手持式电子装置。图4为图3的剖面图，应注意 的是，尽管图3的图像传感器可以是图像传感器100或图像传感器200，但为简洁起见，图4的剖面图仅包括图像传感器100。由图4可知，显示屏组件208包括显示面板202、偏光片204以及保护盖板206，显示面板202具有第一侧201和相对于第一侧201的第二侧203，偏光片204设置于显示面板202的第二侧203，且图像传感器100/200设置于显示面板202的第一侧201，使显示面板11位于图像传感器100/200和偏光片204之间，在偏光片204之上，也就是显示屏组件208的最外层设置有保护盖板12，以直接接触手指210。The application also provides a chip, which can be applied to an under-screen optical fingerprint sensing system, which includes an image sensor 100/200. The present application also provides a handheld device. FIG. 3 is a schematic diagram of an embodiment in which the image sensor of this application is applied to the handheld device. As shown in FIG. 3, the image sensor 100/200 is disposed on the display screen assembly 208 of the handheld device 300. under. The handheld device 300 can be used to perform off-screen optical fingerprint sensing. Among them, the handheld device 300 may be any handheld electronic device such as a smart phone, a personal digital assistant, a handheld computer system, or a tablet computer. 4 is a cross-sectional view of FIG. 3. It should be noted that although the image sensor of FIG. 3 may be the image sensor 100 or the image sensor 200, the cross-sectional view of FIG. 4 only includes the image sensor 100 for the sake of brevity. 4, the display assembly 208 includes a display panel 202, a polarizer 204, and a protective cover 206. The display panel 202 has a first side 201 and a second side 203 opposite to the first side 201. The polarizer 204 is disposed on the display The second side 203 of the panel 202, and the image sensor 100/200 is arranged on the first side 201 of the display panel 202, so that the display panel 11 is located between the image sensor 100/200 and the polarizer 204, on the polarizer 204, also That is, the outermost layer of the display screen assembly 208 is provided with a protective cover 12 to directly contact the finger 210.
在本实施例中，显示面板202可以是一种有机电激发光显示面板(OLED)，但本申请不以此为限。当手持装置300进行指纹辨识时，显示面板202会发出光线提示使用者在显示屏组件208上按压指纹的位置，手指210接近/接触显示屏组件208的保护盖板206时，显示面板202发出的光线中，直接射向手指210的光线L1反射并进入偏光片204，偏光片204会过滤掉非特定方向的光线L1RNP，仅留下部分的光线L1RP进入图像传感器100，在此实施例中，偏光片204和偏光层110的多条金属栅线构成的偏光层具有匹配的特性，即偏光片204和偏光层110的多条金属栅线构成的偏光层具有相同的偏光特性，使能通过偏光片204的光线L1RP亦可通过偏光层110的多条金属栅线构成的偏光层。In this embodiment, the display panel 202 may be an organic electroluminescent display panel (OLED), but the application is not limited to this. When the handheld device 300 performs fingerprint recognition, the display panel 202 will emit light to prompt the user to press the position of the fingerprint on the display assembly 208. When the finger 210 approaches/touches the protective cover 206 of the display assembly 208, the display panel 202 emits Among the light, the light L1 directly directed to the finger 210 is reflected and enters the polarizer 204. The polarizer 204 filters out the light L1RNP in non-specific directions, leaving only part of the light L1RP to enter the image sensor 100. In this embodiment, the polarized light The polarizing layer composed of multiple metal grid lines of the polarizer 204 and the polarizing layer 110 has matching characteristics, that is, the polarizing layer composed of multiple metal grid lines of the polarizer 204 and the polarizing layer 110 has the same polarization characteristics, so that it can pass through the polarizer. The light L1RP of 204 may also pass through the polarizing layer formed by a plurality of metal grid lines of the polarizing layer 110.
此外，显示面板202发出的光线中，直接射向图像传感器100的光线L2称为漏光，漏光L2不经过偏光片204即进入图像传感器100，因此其中漏光L2中约有一半的光线L2NP无法通过偏光层110的多条金属栅线构成的偏光层，而仅有另一半的光线L2P可通过偏光层110的多条金属栅线构成的偏光层，大幅地降低了漏光L2对图像传感器100进行指纹辨识的干扰。In addition, among the light emitted by the display panel 202, the light L2 directly directed to the image sensor 100 is called light leakage. The light leakage L2 enters the image sensor 100 without passing through the polarizer 204. Therefore, about half of the light L2NP in the light leakage L2 cannot pass through the polarized light. The polarizing layer composed of multiple metal grid lines of the layer 110, and only the other half of the light L2P can pass through the polarizing layer composed of multiple metal grid lines of the polarizing layer 110, which greatly reduces light leakage. L2 performs fingerprint recognition on the image sensor 100 Interference.
在某些实施例中，偏光片204和显示面板202之间可依需求另设置有四分之一波延迟器，且显示面板202和图像传感器100之间可依需求设置有对应上述四分之一波延迟器的另一四分之一波延迟器。又，在某些实施例中，显示面板202的第一侧201可设置有抗 反射层(anti-reflection layer)及/或缓冲层。In some embodiments, a quarter-wave retarder can be provided between the polarizer 204 and the display panel 202 as required, and a quarter-wave retarder can be provided between the display panel 202 and the image sensor 100 as required. One-wave retarder is another quarter-wave retarder. Furthermore, in some embodiments, the first side 201 of the display panel 202 may be provided with an anti-reflection layer and/or a buffer layer.
图5为图1的图像传感器100的一实施例的俯视图。相反地，此时图1即为图5的图像传感器100沿剖面线A-A'得到的剖面图。图5中的图像传感器100的偏光层110的多条金属栅线构成的偏光层具垂直的栅状结构，多条金属栅线的长度相同，金属栅线的宽度为d1，且相邻金属栅线的中心线间距为d2，其中d2约等于两倍d1。FIG. 5 is a top view of an embodiment of the image sensor 100 of FIG. 1. On the contrary, at this time, FIG. 1 is a cross-sectional view of the image sensor 100 of FIG. 5 along the cross-sectional line AA′. The polarizing layer composed of multiple metal grid lines of the polarizing layer 110 of the image sensor 100 in FIG. 5 has a vertical grid structure, the multiple metal grid lines have the same length, the width of the metal grid lines is d1, and the adjacent metal grids The centerline spacing of the lines is d2, where d2 is approximately equal to twice d1.
图6为图1的图像传感器100的另一实施例的俯视图。相反地，此时图1即为图6的图像传感器100沿剖面线A-A'得到的剖面图。图6中的图像传感器100的偏光层110的多条金属栅线构成的偏光层具垂直的栅状结构，金属栅线的宽度为d1，且相邻金属栅线的中心线间距为d2，其中d2约等于两倍d1。和图5不同的是，多条金属栅线的长度并不相同，而是依据微透镜114的形状和尺寸而设置。FIG. 6 is a top view of another embodiment of the image sensor 100 of FIG. 1. On the contrary, at this time, FIG. 1 is a cross-sectional view of the image sensor 100 of FIG. 6 along the cross-sectional line AA′. The polarizing layer composed of multiple metal grid lines of the polarizing layer 110 of the image sensor 100 in FIG. 6 has a vertical grid structure, the width of the metal grid lines is d1, and the centerline spacing of adjacent metal grid lines is d2, where d2 is approximately equal to twice d1. The difference from FIG. 5 is that the lengths of the multiple metal grid lines are not the same, but are set according to the shape and size of the micro lens 114.
图7为图1的图像传感器100的又另一实施例的俯视图。相反地，此时图1即为图7的图像传感器100沿剖面线A-A'得到的剖面图。图7中的图像传感器100的偏光层110的多条金属栅线构成的偏光层具45度角的栅状结构，多条金属栅线的长度相同，金属栅线的宽度为d1，且相邻金属栅线的中心线间距为d2，其中d2约等于两倍d1。FIG. 7 is a top view of still another embodiment of the image sensor 100 of FIG. 1. On the contrary, at this time, FIG. 1 is a cross-sectional view of the image sensor 100 of FIG. 7 along the cross-sectional line AA′. The polarizing layer composed of multiple metal grid lines of the polarizing layer 110 of the image sensor 100 in FIG. 7 has a grid structure with a 45-degree angle. The multiple metal grid lines have the same length, and the metal grid lines have a width d1 and are adjacent to each other. The centerline spacing of the metal grid lines is d2, where d2 is approximately equal to twice d1.
图8为图1的图像传感器100的又再另一实施例的俯视图。相反地，此时图1即为图8的图像传感器100沿剖面线A-A'得到的剖面图。图8中的图像传感器100的偏光层110的多条金属栅线构成的偏光层具45度角的栅状结构，金属栅线的宽度为d1，且相邻金属栅线的中心线间距为d2，其中d2约等于两倍d1。和图7不同的是，多条金属栅线的长度并不相同，而是依据微透镜114的形状和尺寸而设置。FIG. 8 is a top view of still another embodiment of the image sensor 100 of FIG. 1. On the contrary, at this time, FIG. 1 is a cross-sectional view of the image sensor 100 of FIG. 8 taken along the cross-sectional line AA′. The polarizing layer formed by a plurality of metal grid lines of the polarizing layer 110 of the image sensor 100 in FIG. 8 has a grid structure with a 45 degree angle, the width of the metal grid lines is d1, and the centerline spacing of adjacent metal grid lines is d2 , Where d2 is approximately equal to twice d1. The difference from FIG. 7 is that the lengths of the multiple metal grid lines are not the same, but are set according to the shape and size of the micro lens 114.
图9为本申请的图像传感器的多个像素的实施例的俯视图。图9中的图像传感器绘示了四个图5的像素100；图10为本申请的图像传感器的多个像素的实施例的俯视图。图10中的图像传感器绘示了四个图6的像素100；图11为本申请的图像传感器的多个像素的 实施例的俯视图。图11中的图像传感器绘示了四个图7的像素100；图12为本申请的图像传感器的多个像素的实施例的俯视图。图12中的图像传感器绘示了四个图8的像素100。应注意的是，实际上图像传感器可包含多于四个像素。且本申请的图像传感器的多个像素并不限于具有相同的金属栅线，在某些实施例中，图像传感器的多个像素可具有不同的金属栅线图案，如图5～图8的图像传感器100可混合设置而形成多个具不同金属栅线图案的像素。FIG. 9 is a top view of an embodiment of a plurality of pixels of the image sensor of the application. The image sensor in FIG. 9 shows four pixels 100 in FIG. 5; FIG. 10 is a top view of an embodiment of multiple pixels of the image sensor in this application. The image sensor in FIG. 10 shows four pixels 100 in FIG. 6; FIG. 11 is a top view of an embodiment of multiple pixels of the image sensor in this application. The image sensor in FIG. 11 shows four pixels 100 in FIG. 7; FIG. 12 is a top view of an embodiment of multiple pixels of the image sensor in this application. The image sensor in FIG. 12 shows four pixels 100 in FIG. 8. It should be noted that in reality the image sensor may include more than four pixels. Moreover, the multiple pixels of the image sensor of the present application are not limited to have the same metal gate line. In some embodiments, the multiple pixels of the image sensor may have different metal gate line patterns, as shown in the images of FIGS. 5 to 8 The sensor 100 can be mixedly arranged to form a plurality of pixels with different metal gate line patterns.
图13至图16为图1的图像传感器100的制造流程。在图13中，首先得到半导体衬底102，且在半导体衬底102形成光敏传感器104。接着，在图14中，在半导体衬底102的正面上方设置后端制程堆叠件，包含堆叠在层间介电层内的金属化层M1～MT-1。举例来说，可以使用溅镀工艺，电镀工艺或蒸镀工艺来形成金属化层M1～MT-1。接着，如图15所示，在金属化层MT-1上，依据所欲设置的偏光特性来形成电容器顶部金属层CTM中的偏光层110。接着，如图16所示，在金属化层MT-1上，形成金属化层MT。最后，形成微透镜114，即可得到图1的图像传感器100。在某些实施例中，在微透镜114和后端制程堆叠件106之间，可另形成滤色器。13 to 16 are the manufacturing processes of the image sensor 100 of FIG. 1. In FIG. 13, the semiconductor substrate 102 is first obtained, and the photosensitive sensor 104 is formed on the semiconductor substrate 102. Next, in FIG. 14, a back-end process stack is disposed above the front surface of the semiconductor substrate 102, including metallization layers M1 to MT-1 stacked in the interlayer dielectric layer. For example, a sputtering process, an electroplating process, or an evaporation process can be used to form the metallization layers M1 to MT-1. Next, as shown in FIG. 15, on the metallization layer MT-1, a polarizing layer 110 in the top metal layer CTM of the capacitor is formed according to the desired polarization characteristics. Next, as shown in FIG. 16, a metallization layer MT is formed on the metallization layer MT-1. Finally, the microlens 114 is formed to obtain the image sensor 100 of FIG. 1. In some embodiments, a color filter may be additionally formed between the micro lens 114 and the back-end process stack 106.
本申请利用金属-绝缘体-金属电容器结构中的电容器顶部金属来实现偏光层，以过滤漏光，增加判读指纹资讯时的准确度。This application uses the metal on the top of the capacitor in the metal-insulator-metal capacitor structure to implement a polarizing layer to filter light leakage and increase the accuracy of fingerprint information interpretation.
上文的叙述简要地提出了本申请某些实施例之特征，而使得本申请所属技术领域具有通常知识者能够更全面地理解本发明内容的多种态样。本申请所属技术领域具有通常知识者当可明了，其可轻易地利用本发明内容作为基础，来设计或更动其他工艺与结构，以实现与此处所述之实施方式相同的目的和/或达到相同的优点。本申请所属技术领域具有通常知识者应当明白，这些均等的实施方式仍属于本发明内容之精神与范围，且其可进行各种变更、替代与更动，而不会悖离本发明内容之精神与范围。The above description briefly presents the characteristics of certain embodiments of the present application, so that those with ordinary knowledge in the technical field to which the present application belongs can more fully understand the various aspects of the present invention. Those with ordinary knowledge in the technical field to which this application belongs can understand that they can easily use the content of the present invention as a basis to design or modify other processes and structures to achieve the same purpose and/or as the embodiments described herein. To achieve the same advantages. Those with ordinary knowledge in the technical field to which this application belongs should understand that these equal implementations still belong to the spirit and scope of the content of the present invention, and various changes, substitutions and alterations can be made without departing from the spirit of the content of the present invention With scope.

Claims (20)

  1. 一种图像传感器，其特征在于，所述图像传感器包括半导体衬底和多个像素，其中所述多个像素中的每一像素包括：An image sensor, characterized in that the image sensor includes a semiconductor substrate and a plurality of pixels, wherein each pixel of the plurality of pixels includes:
    光敏传感器，设置于所述半导体衬底；The photosensitive sensor is arranged on the semiconductor substrate;
    后端制程堆叠件，设置于所述半导体衬底上，其中所述后端制程堆叠件包括：The back-end process stack is disposed on the semiconductor substrate, wherein the back-end process stack includes:
    多个金属化层；以及Multiple metallization layers; and
    电容器顶部金属层，设置于所述多个金属化层中的两连续金属化层之间，且所述电容器顶部金属具有多条金属栅线形成的偏光层，覆盖于所述光敏传感器之上。The top metal layer of the capacitor is arranged between two consecutive metalization layers among the plurality of metalization layers, and the top metal of the capacitor has a polarizing layer formed by a plurality of metal gate lines, covering the photosensitive sensor.
  2. 如权利要求1所述的图像传感器，另包括微透镜，设置于所述后端制程堆叠件上，使所述后端制程堆叠件位于所述微透镜和所述半导体衬底之间。5. The image sensor of claim 1, further comprising a micro lens, which is disposed on the back-end process stack, so that the back-end process stack is located between the micro lens and the semiconductor substrate.
  3. 如权利要求1所述的图像传感器，其中所述偏光层的多条金属栅线用来过滤掉非特定方向的光线。5. The image sensor of claim 1, wherein the plurality of metal grid lines of the polarizing layer are used to filter out light in non-specific directions.
  4. 如权利要求3所述的图像传感器，其中所述偏光层的多条金属栅线为平行设置。8. The image sensor of claim 3, wherein the plurality of metal grid lines of the polarizing layer are arranged in parallel.
  5. 如权利要求3所述的图像传感器，其中所述偏光层的多条金属栅线之间的间距相等。8. The image sensor of claim 3, wherein the spacing between the plurality of metal grid lines of the polarizing layer is equal.
  6. 如权利要求1所述的图像传感器，其中所述两连续金属化层为所述多个金属化层中的最远离所述半导体衬底的两连续金属化层。The image sensor according to claim 1, wherein the two continuous metallization layers are the two continuous metallization layers farthest from the semiconductor substrate among the plurality of metallization layers.
  7. 如权利要求1所述的图像传感器，其中所述偏光层的多条金属栅线的宽度小于所述两连续金属化层中的金属线。8. The image sensor according to claim 1, wherein the width of the plurality of metal gate lines of the polarizing layer is smaller than that of the metal lines in the two consecutive metallization layers.
  8. 如权利要求1所述的图像传感器，其中所述偏光层的多条金属栅线的长度彼此相同。The image sensor according to claim 1, wherein the lengths of the plurality of metal grid lines of the polarizing layer are the same as each other.
  9. 如权利要求1所述的图像传感器，其中所述偏光层的多条金属栅线的长度依据微透镜的形状而设置。8. The image sensor of claim 1, wherein the length of the plurality of metal grid lines of the polarizing layer is set according to the shape of the micro lens.
  10. 如权利要求1所述的图像传感器，另包括：The image sensor according to claim 1, further comprising:
    逻辑电路，包括：Logic circuit, including:
    晶体管，设置于所述半导体衬底；以及A transistor provided on the semiconductor substrate; and
    金属-绝缘体-金属电容器，设置后端制程堆叠件。Metal-insulator-metal capacitors are equipped with back-end process stacks.
  11. 如权利要求10所述的图像传感器，其中所述金属-绝缘体-金属电容器包括：10. The image sensor of claim 10, wherein the metal-insulator-metal capacitor comprises:
    电容下板，设置于所述两连续金属化层中靠近所述半导体衬底的金属化层；以及The lower capacitor plate is arranged on the metallization layer near the semiconductor substrate among the two continuous metallization layers; and
    电容上板，设置于所述电容器顶部金属层。The capacitor upper plate is arranged on the top metal layer of the capacitor.
  12. 如权利要求11所述的图像传感器，其中所述电容下板以及所述电容上板耦接至所述两连续金属化层中远离所述半导体衬底的金属化层。11. The image sensor of claim 11, wherein the capacitor lower plate and the capacitor upper plate are coupled to the metallization layer of the two continuous metallization layers that is far from the semiconductor substrate.
  13. 一种芯片，适用于屏下光学指纹感测系统，其特征在于，所述芯片包括：A chip suitable for an under-screen optical fingerprint sensing system, characterized in that the chip includes:
    如权利要求1-12中任一项所述的图像传感器。The image sensor according to any one of claims 1-12.
  14. 一种手持装置，用以执行屏下光学指纹感测，其特征在于，包括：A handheld device for performing under-screen optical fingerprint sensing, characterized by comprising:
    显示屏组件；以及Display assembly; and
    如权利要求1-12中任一项所述的图像传感器，用以获得所述特定对象的指纹信息。The image sensor according to any one of claims 1-12 to obtain fingerprint information of the specific object.
  15. 如权利要求14所述的手持装置，其中所述显示屏组件包括：The handheld device of claim 14, wherein the display screen assembly comprises:
    显示面板；以及Display panel; and
    偏光片。Polarizer.
  16. 如权利要求15所述的手持装置，其中所述偏光片和所述偏光层具有相同的偏光特性。15. The handheld device of claim 15, wherein the polarizer and the polarizing layer have the same polarization characteristics.
  17. 如权利要求15所述的手持装置，其中所述显示屏组件另包括保护盖板。15. The handheld device of claim 15, wherein the display screen assembly further comprises a protective cover.
  18. 一种图像传感器制造方法，其特征在于，包括：An image sensor manufacturing method, characterized in that it comprises:
    提供半导体衬底；Provide semiconductor substrate;
    于所述半导体衬底形成光敏传感器；Forming a photosensitive sensor on the semiconductor substrate;
    于所述半导体衬底上形成第一金属化层；Forming a first metallization layer on the semiconductor substrate;
    于所述第一金属化层上的电容器顶部金属层中形成偏光层；以及Forming a polarizing layer in the top metal layer of the capacitor on the first metallization layer; and
    于所述偏光层上形成第二金属化层。A second metallization layer is formed on the polarizing layer.
  19. 如权利要求18所述的图像传感器制造方法，另包括：The image sensor manufacturing method of claim 18, further comprising:
    于所述第二金属化层上形成微透镜。A micro lens is formed on the second metallization layer.
  20. 如权利要求19所述的图像传感器制造方法，其中于所述第一金属化层上的所述电容器顶部金属层中形成所述偏光层包括：19. The image sensor manufacturing method of claim 19, wherein forming the polarizing layer in the capacitor top metal layer on the first metallization layer comprises:
    于所述电容器顶部金属层中形成多条金属栅线。A plurality of metal gate lines are formed in the top metal layer of the capacitor.
PCT/CN2019/098284 2019-07-30 2019-07-30 Image sensor and manufacturing method therefor, chip, and handheld apparatus WO2021016838A1 (en)

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