WO2021016838A1 - Capteur d'image et son procédé de fabrication, puce et appareil portatif - Google Patents

Capteur d'image et son procédé de fabrication, puce et appareil portatif Download PDF

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Publication number
WO2021016838A1
WO2021016838A1 PCT/CN2019/098284 CN2019098284W WO2021016838A1 WO 2021016838 A1 WO2021016838 A1 WO 2021016838A1 CN 2019098284 W CN2019098284 W CN 2019098284W WO 2021016838 A1 WO2021016838 A1 WO 2021016838A1
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WIPO (PCT)
Prior art keywords
image sensor
layer
metal
capacitor
semiconductor substrate
Prior art date
Application number
PCT/CN2019/098284
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English (en)
Chinese (zh)
Inventor
赵维民
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深圳市汇顶科技股份有限公司
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Priority to CN201980004022.6A priority Critical patent/CN111052385A/zh
Priority to PCT/CN2019/098284 priority patent/WO2021016838A1/fr
Publication of WO2021016838A1 publication Critical patent/WO2021016838A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Definitions

  • This application relates to an image sensor, a manufacturing method thereof, a chip and a handheld device using the chip, and more particularly to an image sensor with a polarizing layer, a manufacturing method of the image sensor, an image sensor chip and a handheld device.
  • CMOS image sensors have been mass-produced and applied.
  • CMOS image sensors can be used to implement under-screen optical fingerprint sensing devices.
  • the under-screen optical fingerprint sensing device is set on the back of the display.
  • the light from the front of the display reflects the fingerprint information into the image sensor in the under-screen optical fingerprint sensing device.
  • To interpret fingerprint information In order to improve the accuracy of fingerprint information interpretation, reducing the noise received by the under-screen optical fingerprint sensing device has become an important work item in this field.
  • One of the objectives of this application is to disclose an image sensor, a manufacturing method thereof, a chip, and a handheld device using the chip to solve the above-mentioned problems.
  • An embodiment of the present application discloses an image sensor including a semiconductor substrate and a plurality of pixels, wherein each pixel of the plurality of pixels includes: a photosensitive sensor disposed on the semiconductor substrate; a back-end process stack The device is disposed on the semiconductor substrate, wherein the back-end process stack includes: a plurality of metallization layers; and a capacitor top metal layer, which is disposed on one of the two consecutive metallization layers of the plurality of metallization layers
  • the top metal of the capacitor has a polarizing layer formed by a plurality of metal gate lines, covering the photosensitive sensor.
  • An embodiment of the present application discloses a method for manufacturing an image sensor, including: providing a semiconductor substrate; forming a photosensitive sensor on the semiconductor substrate; forming a first metallization layer on the semiconductor substrate; A polarizing layer is formed in the top metal layer of the capacitor on a metallization layer; and a second metallization layer is formed on the polarizing layer.
  • An embodiment of the application discloses a chip including the above-mentioned image sensor.
  • An embodiment of the present application discloses a handheld device for performing under-screen optical fingerprint sensing, including: a display screen assembly; and the above-mentioned image sensor to obtain fingerprint information of the specific object.
  • the embodiment of the present application adds a polarizing layer to the image sensor, which can improve the accuracy of under-screen optical fingerprint sensing.
  • FIG. 1 is a cross-sectional view of an embodiment of one pixel of the image sensor of this application;
  • FIG. 2 is a cross-sectional view of another embodiment of the image sensor of the application.
  • FIG. 3 is a schematic diagram of an embodiment in which the image sensor of this application is applied to a handheld device
  • FIG. 4 is a cross-sectional view of the image sensor of FIG. 3;
  • FIG. 5 to 8 are top views of the embodiment of the image sensor of FIG. 1;
  • 9 to 12 are top views of embodiments of multiple pixels of the image sensor of this application.
  • FIG. 13 to 16 are schematic diagrams of the manufacturing process of the image sensor shown in FIG. 1.
  • first and second features are in direct contact with each other; and may also include additional components are formed between the above-mentioned first and second features, so that the first and second features may not be in direct contact.
  • content of the present invention may reuse component symbols and/or labels in multiple embodiments. Such repeated use is based on the purpose of brevity and clarity, and does not in itself represent the relationship between the different embodiments and/or configurations discussed.
  • spatially relative terms here such as “below”, “below”, “below”, “above”, “above” and similar, may be used to facilitate the description of the drawing
  • the relationship between one component or feature relative to another component or feature is shown.
  • these spatially relative terms also cover a variety of different orientations in which the device is in use or operation.
  • the device may be placed in other orientations (for example, rotated by 90 degrees or in other orientations), and these spatially-relative description words should be explained accordingly.
  • the under-screen optical fingerprint sensing device is set on the back of the display.
  • the light from the front of the display reflects the fingerprint information into the image sensor in the under-screen optical fingerprint sensing device to read the fingerprint.
  • Information Since the light emitted by part of the display screen directly enters the image sensor of the under-screen optical fingerprint sensor to form a light leakage path, resulting in shot noise, the image sensor of the under-screen optical fingerprint sensor can be provided with a polarizing layer To filter light leakage.
  • This application uses the capacitor top metal (CTM) in the metal-insulator-metal (MIM) capacitor structure to implement a polarizing layer to filter light leakage and increase the accuracy of fingerprint information. The details will be described as follows.
  • the image sensor of the present application can improve the accuracy of the under-screen optical fingerprint sensing device, this use is not a limitation of the present application. In other words, the image sensor of the present application can also be applied to the under-screen optical fingerprint Other occasions besides sensing devices.
  • FIG. 1 is a cross-sectional view of an embodiment of one pixel of the image sensor of this application.
  • the image sensor 100 may include multiple pixels, and the image sensor 100 in FIG. 1 only shows one of the pixels.
  • the image sensor 100 is a front side illumination (FSI) image sensor 100, and includes a semiconductor substrate 102, a back end of line (BEOL) stack 106, and a micro lens 114.
  • the semiconductor substrate 102 may be a bulk semiconductor substrate, such as a bulk silicon substrate or a silicon-on-insulator (SOI) substrate.
  • the photosensitive sensor 104 is disposed on the semiconductor substrate 102.
  • the back-end process stack 106 is disposed on the front side of the semiconductor substrate 102 in the figure.
  • the microlens 114 is disposed on the back-end process stack 106 such that the back-end process stack 106 is between the semiconductor substrate 102 and the microlens 114.
  • a color filter may be additionally formed between the micro lens 114 and the back-end process stack 106.
  • the back-end process stack 106 includes an interlayer dielectric (ILD) layer 108, and the back-end process stack 106 from the bottom (the end close to the semiconductor substrate 102) to the top (the end close to the microlens 102) includes the stack at The metallization layers M1 to MT in the interlayer dielectric layer, where T is the number of metallization layers.
  • the interlayer dielectric layer may be a low-k dielectric (ie, a dielectric with a dielectric constant less than about 3.9) or an oxide.
  • the metallization layers M1 ⁇ MT may be electrically coupled to each other through via holes and may be electrically coupled to the semiconductor substrate 102 through contacts.
  • the metallization layers M1 to MT, through holes, and contacts may be metals, such as aluminum copper, germanium, copper, or some other metals.
  • the back-end process stack 106 can implement a metal-insulator-metal capacitor structure process, that is, the top two metallization layers MT-1 of the metallization layers M1 to MT of the back-end process stack 106 and the metal
  • the middle of the metallization layer MT includes the capacitor top metal layer CTM, and the metallization layer MT-1 (also called the capacitor bottom metal layer (CBM)), the capacitor top metal layer CTM, and the metallization layer MT-1 and the capacitor top metal layer CTM
  • the interlayer dielectric layer in between can jointly form a metal-insulator-metal capacitor structure, and the top metal layer CTM and bottom metal of the capacitor can be coupled to the metallization layer MT.
  • the metallization layer MT-1, the capacitor top metal layer CTM, and the metallization layer MT are not only used to realize the metal-insulator-metal capacitor structure, but the capacitor top metal layer CTM is used to realize the polarizing layer.
  • the top metal layer CTM of the capacitor can be patterned to have a plurality of metal gate lines covering the photosensitive sensor 104 to serve as the polarizing layer 110.
  • the polarizing layer 110 implemented by the metal layer CTM on the top of the capacitor can filter out the light in non-specific directions, so that the microlens 114 enters the image sensor 100.
  • the light that passes through the multiple metal grid lines of the polarizing layer 110 first enters the photosensitive sensor 104 after filtering light that has no specific directionality, instead of all the light passing through the microlens 102 enters the photosensitive sensor 106.
  • the width of the upper metallization layer is restricted and the thicker the width required, and the required spacing is also larger, and the width of the lower metallization layer can be allowed to be thinner ,
  • the required spacing is also small, so the use of a lower metallization layer can form a finer metal grid line, which can meet the size requirements of the metal grid line for the polarizing layer of a specific wavelength.
  • the polarizing layer is implemented in the lower metallization layer, because it is necessary to spread high-density metal grid lines above the photosensitive sensor 104, the density difference between adjacent metallization layers will be too large, which will affect the upper layer.
  • the capacitor top metal layer CTM and the general metallization layers M1-MT have different semiconductor manufacturing process rules. Generally speaking, the capacitor top metal layer CTM is located between the top two metallization layers MT-1 and MT, that is, the farthest
  • the semiconductor substrate 102 has two consecutive metallization layers, but it is allowed to have metal gate lines that are denser than the metallization layers MT-1 and MT, that is, the width of the metal gate line in the metal layer CTM on the top of the capacitor is smaller than that of the metallization layer
  • the metal lines in MT-1 and MT can meet the size requirements of metal grid lines for polarizing layers of specific wavelengths.
  • the use of the metal layer CTM on the top of the capacitor to form the metal gate line will only affect the metallization layer MT of the next layer at most, and the effect is limited, so it is more advantageous than using a lower metallization layer.
  • the metallization layer MT-1 should be kept as clear as possible in the path between the microlens 114 and the photosensitive sensor 104, that is, the metallization layer MT-1 should not be provided with a metal pattern directly under the photosensitive sensor 104 In order to avoid blocking the light, for example, from the top view, the metal pattern does not overlap with the photosensitive sensor 104 in the metallization layer MT-1.
  • the metallization layer MT should be kept as clear as possible in the path between the microlens 114 and the photosensitive sensor 104, that is, the metallization layer MT should not be provided with a metal pattern directly under the photosensitive sensor 104 to avoid blocking the light.
  • the metallization layer MT can be used to control the aperture size.
  • the metallization layer MT is patterned to form a pattern with a specific aperture to control the amount of light entering, that is, the microlens 114 and the photosensitive sensor 104 An aperture 112 is formed therebetween, but the present application is not limited to this, and a structure of using a plurality of metal gate lines of the metal layer CTM on the top of the capacitor to form the polarizing layer 110 may be implemented separately.
  • FIG. 2 is a cross-sectional view of another embodiment of the image sensor of the application.
  • the image sensor 200 of FIG. 2 includes the image sensor 100 of FIG. 1 and a peripheral logic circuit 120.
  • FIG. 2 is only a schematic diagram. In some embodiments, the logic circuit 120 and the image sensor 100 may not be arranged in close proximity as shown in FIG. 2, and may be separated by a certain distance.
  • the logic circuit 120 includes a transistor 122 disposed on the semiconductor substrate 102.
  • the metallization layers M1 to MT in the back-end process stack 106 can be used to connect the transistor 122 to other components (such as the image sensor 100 and/or other transistors not shown).
  • the logic circuit 120 further includes a metal-insulator-metal capacitor 124 with a capacitor lower plate 126 and a capacitor upper plate 128, which are electrically coupled to the metallization layer MT through vias 130 and 132, respectively.
  • the lower capacitor plate 126 is arranged on the metallization layer MT-1, and the upper capacitor plate 128 is arranged on the top metal layer CTM of the capacitor.
  • the application also provides a chip, which can be applied to an under-screen optical fingerprint sensing system, which includes an image sensor 100/200.
  • the present application also provides a handheld device.
  • FIG. 3 is a schematic diagram of an embodiment in which the image sensor of this application is applied to the handheld device. As shown in FIG. 3, the image sensor 100/200 is disposed on the display screen assembly 208 of the handheld device 300. under.
  • the handheld device 300 can be used to perform off-screen optical fingerprint sensing.
  • the handheld device 300 may be any handheld electronic device such as a smart phone, a personal digital assistant, a handheld computer system, or a tablet computer.
  • 4 is a cross-sectional view of FIG. 3. It should be noted that although the image sensor of FIG.
  • the display assembly 208 includes a display panel 202, a polarizer 204, and a protective cover 206.
  • the display panel 202 has a first side 201 and a second side 203 opposite to the first side 201.
  • the polarizer 204 is disposed on the display The second side 203 of the panel 202, and the image sensor 100/200 is arranged on the first side 201 of the display panel 202, so that the display panel 11 is located between the image sensor 100/200 and the polarizer 204, on the polarizer 204, also That is, the outermost layer of the display screen assembly 208 is provided with a protective cover 12 to directly contact the finger 210.
  • the display panel 202 may be an organic electroluminescent display panel (OLED), but the application is not limited to this.
  • OLED organic electroluminescent display panel
  • the display panel 202 will emit light to prompt the user to press the position of the fingerprint on the display assembly 208.
  • the display panel 202 emits Among the light, the light L1 directly directed to the finger 210 is reflected and enters the polarizer 204.
  • the polarizer 204 filters out the light L1RNP in non-specific directions, leaving only part of the light L1RP to enter the image sensor 100.
  • the polarized light The polarizing layer composed of multiple metal grid lines of the polarizer 204 and the polarizing layer 110 has matching characteristics, that is, the polarizing layer composed of multiple metal grid lines of the polarizer 204 and the polarizing layer 110 has the same polarization characteristics, so that it can pass through the polarizer.
  • the light L1RP of 204 may also pass through the polarizing layer formed by a plurality of metal grid lines of the polarizing layer 110.
  • the light L2 directly directed to the image sensor 100 is called light leakage.
  • the light leakage L2 enters the image sensor 100 without passing through the polarizer 204. Therefore, about half of the light L2NP in the light leakage L2 cannot pass through the polarized light.
  • L2 performs fingerprint recognition on the image sensor 100 Interference.
  • a quarter-wave retarder can be provided between the polarizer 204 and the display panel 202 as required, and a quarter-wave retarder can be provided between the display panel 202 and the image sensor 100 as required.
  • One-wave retarder is another quarter-wave retarder.
  • the first side 201 of the display panel 202 may be provided with an anti-reflection layer and/or a buffer layer.
  • FIG. 5 is a top view of an embodiment of the image sensor 100 of FIG. 1.
  • FIG. 1 is a cross-sectional view of the image sensor 100 of FIG. 5 along the cross-sectional line AA′.
  • the polarizing layer composed of multiple metal grid lines of the polarizing layer 110 of the image sensor 100 in FIG. 5 has a vertical grid structure, the multiple metal grid lines have the same length, the width of the metal grid lines is d1, and the adjacent metal grids The centerline spacing of the lines is d2, where d2 is approximately equal to twice d1.
  • FIG. 6 is a top view of another embodiment of the image sensor 100 of FIG. 1.
  • FIG. 1 is a cross-sectional view of the image sensor 100 of FIG. 6 along the cross-sectional line AA′.
  • the polarizing layer composed of multiple metal grid lines of the polarizing layer 110 of the image sensor 100 in FIG. 6 has a vertical grid structure, the width of the metal grid lines is d1, and the centerline spacing of adjacent metal grid lines is d2, where d2 is approximately equal to twice d1.
  • the difference from FIG. 5 is that the lengths of the multiple metal grid lines are not the same, but are set according to the shape and size of the micro lens 114.
  • FIG. 7 is a top view of still another embodiment of the image sensor 100 of FIG. 1.
  • FIG. 1 is a cross-sectional view of the image sensor 100 of FIG. 7 along the cross-sectional line AA′.
  • the polarizing layer composed of multiple metal grid lines of the polarizing layer 110 of the image sensor 100 in FIG. 7 has a grid structure with a 45-degree angle.
  • the multiple metal grid lines have the same length, and the metal grid lines have a width d1 and are adjacent to each other.
  • the centerline spacing of the metal grid lines is d2, where d2 is approximately equal to twice d1.
  • FIG. 8 is a top view of still another embodiment of the image sensor 100 of FIG. 1.
  • FIG. 1 is a cross-sectional view of the image sensor 100 of FIG. 8 taken along the cross-sectional line AA′.
  • the polarizing layer formed by a plurality of metal grid lines of the polarizing layer 110 of the image sensor 100 in FIG. 8 has a grid structure with a 45 degree angle, the width of the metal grid lines is d1, and the centerline spacing of adjacent metal grid lines is d2 , Where d2 is approximately equal to twice d1.
  • the difference from FIG. 7 is that the lengths of the multiple metal grid lines are not the same, but are set according to the shape and size of the micro lens 114.
  • FIG. 9 is a top view of an embodiment of a plurality of pixels of the image sensor of the application.
  • the image sensor in FIG. 9 shows four pixels 100 in FIG. 5;
  • FIG. 10 is a top view of an embodiment of multiple pixels of the image sensor in this application.
  • the image sensor in FIG. 10 shows four pixels 100 in FIG. 6;
  • FIG. 11 is a top view of an embodiment of multiple pixels of the image sensor in this application.
  • the image sensor in FIG. 11 shows four pixels 100 in FIG. 7;
  • FIG. 12 is a top view of an embodiment of multiple pixels of the image sensor in this application.
  • the image sensor in FIG. 12 shows four pixels 100 in FIG. 8. It should be noted that in reality the image sensor may include more than four pixels.
  • the multiple pixels of the image sensor of the present application are not limited to have the same metal gate line.
  • the multiple pixels of the image sensor may have different metal gate line patterns, as shown in the images of FIGS. 5 to 8
  • the sensor 100 can be mixedly arranged to form a plurality of pixels with different metal gate line patterns.
  • 13 to 16 are the manufacturing processes of the image sensor 100 of FIG. 1.
  • the semiconductor substrate 102 is first obtained, and the photosensitive sensor 104 is formed on the semiconductor substrate 102.
  • a back-end process stack is disposed above the front surface of the semiconductor substrate 102, including metallization layers M1 to MT-1 stacked in the interlayer dielectric layer.
  • a sputtering process, an electroplating process, or an evaporation process can be used to form the metallization layers M1 to MT-1.
  • a polarizing layer 110 in the top metal layer CTM of the capacitor is formed according to the desired polarization characteristics.
  • a metallization layer MT is formed on the metallization layer MT-1.
  • the microlens 114 is formed to obtain the image sensor 100 of FIG. 1.
  • a color filter may be additionally formed between the micro lens 114 and the back-end process stack 106.
  • This application uses the metal on the top of the capacitor in the metal-insulator-metal capacitor structure to implement a polarizing layer to filter light leakage and increase the accuracy of fingerprint information interpretation.

Abstract

L'invention concerne un capteur d'image et son procédé de fabrication, une puce et un appareil portatif. Le capteur d'image comprend un substrat semi-conducteur (102) et de multiples pixels, chaque pixel parmi les multiples pixels comprenant : un capteur photosensible (104) disposé sur le substrat semi-conducteur ; et un élément d'empilement de traitement de fabrication finale (106) disposé sur le substrat semi-conducteur, l'élément d'empilement de processus de fabrication finale comprenant : de multiples couches de métallisation (M1-MT) ; et une couche métallique supérieure de condensateur (CTM)) disposée entre deux couches de métallisation consécutives parmi les multiples couches de métallisation, et un métal supérieur de condensateur comprend une couche de polarisation (110) formée par de multiples lignes de grille métallique et recouvre le capteur photosensible.
PCT/CN2019/098284 2019-07-30 2019-07-30 Capteur d'image et son procédé de fabrication, puce et appareil portatif WO2021016838A1 (fr)

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Application Number Priority Date Filing Date Title
CN201980004022.6A CN111052385A (zh) 2019-07-30 2019-07-30 图像传感器及其制造方法、芯片及手持装置
PCT/CN2019/098284 WO2021016838A1 (fr) 2019-07-30 2019-07-30 Capteur d'image et son procédé de fabrication, puce et appareil portatif

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PCT/CN2019/098284 WO2021016838A1 (fr) 2019-07-30 2019-07-30 Capteur d'image et son procédé de fabrication, puce et appareil portatif

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