CN114255486A - Optical sensing device, preparation method thereof and display device - Google Patents
Optical sensing device, preparation method thereof and display device Download PDFInfo
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Abstract
The application discloses an optical sensing device, a manufacturing method thereof and a display device, and the optical sensing device comprises a lens layer, a light ray restraint layer and a photosensitive device layer which are arranged in a stacked mode, wherein a light through hole is formed in the light ray restraint layer and is obliquely arranged, the light through hole is configured to allow incident light rays with incidence angles in a range of phi-theta and phi + theta to be incident on the photosensitive device layer, phi is an included angle between an aperture center line of the light through hole and a central axis of the lens layer, the value range of phi is 42-70 degrees, and the value range of theta is 1-10 degrees. The optical sensing device that this application embodiment provided, through setting up the logical unthreaded hole that the slope set up, through the design best matching relation of adjusting each parameter of light restraint layer and below sensitization district size, position for light restraint structure can control its angle of collection and in predetermineeing the within range, only allows partial light to get into the photosensitive device layer, solves the influence of external strong environment light to optical sensing performance, further improves the recognition performance.
Description
Technical Field
The application relates to the technical field of sensing, in particular to an optical sensing device, a preparation method thereof and a display device.
Background
Due to the increasing miniaturization of future handheld electronic products, the development is urgently needed to be directed to the direction of thinner thickness, smaller volume and higher integration degree. The multilayer diaphragm and the micro lens are directly integrated on the surface of the sensor by using resin materials at present, so that three pain points of a collimation film fitting scheme can be effectively reduced: the fingerprint identification method has the advantages that the large-angle crosstalk, the film material twill/moire and the reliability NG are realized, so that the accuracy of the identified fingerprint information is improved in the optical fingerprint identification process.
However, in the existing structure, the ambient light cannot be strictly and completely filtered, and the actual spectrum has a certain difference from the ideal spectrum, so that the fingerprint SNR (signal-to-noise ratio) is low, that is, the fingerprint performance is poor. In addition, in the preparation process, the large-angle crosstalk cannot be effectively solved under the influence of uncontrollable factors in the process of manufacturing the integrated scheme.
Disclosure of Invention
In view of the above-mentioned defects or shortcomings in the prior art, it is desirable to provide an optical sensing device, a manufacturing method thereof, and a display device, which can further reduce the interference of ambient light and improve the fingerprint performance.
In a first aspect, the present application provides an optical sensor device, including a lens layer, a light ray constraining layer, and a photosensitive device layer, which are stacked, where the light ray constraining layer is provided with a light through hole, the light through hole is disposed in an inclined manner, and the light through hole is configured to allow incident light rays with an incident angle in a range of (phi-theta, phi + theta) to strike the photosensitive device layer, where phi is an included angle between an aperture center line of the light through hole and a central axis of the lens layer, phi is in a range of 42 ° to 70 °, and theta is in a range of 1 ° to 10 °.
Optionally, the photosensitive device layer includes a photosensitive functional layer and a thin film transistor layer, which are stacked, and an orthographic projection of a photosensitive device in the photosensitive functional layer on the thin film transistor layer is not overlapped with a thin film transistor in the thin film transistor layer.
Optionally, a plurality of lenses are disposed on the lens layer, the lenses are disposed in one-to-one correspondence with the pixel units on the display panel, and an orthographic projection of the center of each lens on the display panel overlaps with the center of each pixel unit.
Optionally, the light restriction layer includes at least two layers of diaphragm layers, each diaphragm layer is provided with an opening, and the at least two layers of openings are arranged in a staggered manner to form the light passing hole.
Optionally, the shape of the opening is triangular, square or circular.
Optionally, the aperture layer includes a transparent layer and a light shielding layer disposed on a surface of the transparent layer facing away from the lens layer, the light shielding layer having the opening disposed thereon.
Optionally, the light restriction layer includes a first diaphragm layer in contact with the photosensitive functional layer, a first opening is disposed on the first diaphragm layer, and an orthographic projection of a center of the first opening on the photosensitive functional layer overlaps with a center of the photosensitive device.
Optionally, the optical film further comprises a light filtering film layer, and the light filtering film layer is arranged in the transparent layer of one of the diaphragm layers.
In a second aspect, the present application provides a method of manufacturing an optical sensor device, for manufacturing an optical sensor device as described in any of the above, the method comprising:
providing a substrate base plate;
forming a thin film transistor layer on the substrate base plate;
forming a photosensitive functional layer on the thin film transistor layer, wherein an orthographic projection of a photosensitive device on the thin film transistor layer in the photosensitive functional layer is not overlapped with a thin film transistor in the thin film transistor layer;
alternately forming a light shielding layer and a transparent layer on the photosensitive functional layer to form a light ray restraint layer, wherein the light shielding layer is provided with openings, and the openings on the light ray restraint layer are alternately arranged to form light through holes;
forming a lens layer on the light confinement layer.
In a third aspect, the present application provides a display apparatus comprising a display panel and an optical sensing device as described in any of the above.
The technical scheme provided by the embodiment of the application can have the following beneficial effects:
the embodiment of the application provides an optical sensing device, through setting up the logical unthreaded hole that the slope set up, through the design best matching relation of adjusting each parameter of light restraint layer and below sensitization district size, position for light restraint structure can control its angle of collection and in predetermineeing the within range, only allows partial light to get into the photosensitive device layer, and shelter from to the light of certain angle within range, solve the influence of external strong environment light to optical sensing performance, further improve the recognition performance.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:
fig. 1 is a schematic structural diagram of an optical sensing device provided in an embodiment of the present application;
FIG. 2 is a schematic structural diagram of a light confinement layer according to an embodiment of the present disclosure;
FIG. 3 is a schematic structural diagram of another light confinement layer provided in the embodiments of the present application;
fig. 4 is an internal circuit diagram of an optical sensing device provided by an embodiment of the present application;
FIG. 5 is a schematic light diagram of an optical sensing device provided by an embodiment of the present application;
fig. 6 is a schematic positional relationship diagram of an optical sensing device provided in an embodiment of the present application;
FIG. 7 is a schematic diagram illustrating a dimensional relationship of an optical sensing device according to an embodiment of the present application;
FIG. 8 is a schematic diagram of a T-FWHM curve of an optical sensing device provided by an embodiment of the present application;
fig. 9 is a flowchart of a method for manufacturing an optical sensor device according to an embodiment of the present application.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant invention and not restrictive of the invention. It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
Please refer to fig. 1 in detail, the present application provides an optical sensor device, which includes a lens layer 10, a light-restricting layer 20, and a photosensitive device layer 30, which are stacked, wherein a light-passing hole 120 is disposed on the light-restricting layer 20, the light-passing hole 120 is disposed in an inclined manner, the light-passing hole 120 is configured to allow incident light with an incident angle in a range of (phi-theta, phi + theta) to strike the photosensitive device layer 30, where phi is an included angle between an aperture center line of the light-passing hole 120 and a central axis of the lens layer 10, phi is in a range of 42 ° to 70 °, and theta is in a range of 1 ° to 10 °.
In the embodiment of the present application, the central axis of the light passing hole 120 and the central axis of the lens layer 10 form an included angle. When the central axis of the light-passing hole 120 is defined, the light-passing hole 120 includes a light-entering hole close to the lens layer 10 and a light-exiting hole close to the photosensitive device layer 30, and the central axis of the light-passing hole 120 is defined as a connection line between the center of the light-entering hole and the center of the light-exiting hole. In the embodiment of the present application, the shapes of the light inlet and the light outlet are not limited, and may be circular, square, rectangular, and the like. In addition, other aperture shapes may be provided in different cross sections inside the light transmitting hole 120.
In the embodiment of the present application, the light passing hole 120 passes through a transparent layer 40 and a light shielding layer 50 is disposed on both upper and lower surfaces of the transparent layer 40 or a middle cross section of the transparent layer 40, and the light passing hole 120 is formed by forming an opening for light to pass through on the light shielding layer 50. In the embodiment of the present application, the number of the light shielding layers 50 forming the light passing holes 120 is not limited, and the light passing holes may be formed by at least two light shielding layers 50. Two-layer and three-layer structures are exemplified in the embodiments of the present application for illustrative purposes. In different embodiments, the adjustment is performed according to the requirements of different devices, incident angles and the like.
In a specific arrangement, as shown in fig. 2 to 3, the light restriction layer 20 includes at least two aperture layers 60, each aperture layer 60 is provided with an opening 70, and at least two layers of the openings 70 are alternately arranged to form the light passing hole 120. The aperture layer 60 includes a transparent layer 40 and a light shielding layer 50 disposed on a surface of the transparent layer 40 facing away from the lens layer 10, and the light shielding layer 50 is provided with the opening 70. The shape of the opening 70 is triangular, square or circular.
In addition, the photosensitive device layer 30 includes a photosensitive functional layer 80 and a thin-film transistor layer 90, which are stacked, and an orthographic projection of a photosensitive device in the photosensitive functional layer 80 on the thin-film transistor layer 90 is not overlapped with a thin-film transistor in the thin-film transistor layer 90.
The photosensitive functional layer 80 includes a photosensitive device, and in this embodiment, a schematic structural diagram of a photosensitive device is shown in fig. 3, where the photosensitive device 100 includes a first electrode 101 made of a metal conductive material, a second electrode 102 made of a transparent conductive material, and a photosensitive layer PIN located between the first electrode 101 and the second electrode 102. In one example, the first electrode 101 and the second electrode 102 are both in contact with the photosensitive layer PIN. It should be noted that the disclosure does not limit the material of the photosensitive layer PIN, and those skilled in the art can select the material as needed. In addition, the first electrode 101 may be formed by using a source-drain metal layer of a thin film transistor.
The thin film transistor layer 90 includes a substrate, and a reset thin film transistor T1, a driving thin film transistor T2, and a switching thin film transistor T3 formed on the substrate, wherein the switching thin film transistor T3 is electrically connected to the photosensitive device 100 to control the photosensitive device 100. It is to be understood that the substrate herein may be a glass substrate or a flexible substrate.
Fig. 4 is an internal circuit diagram of an optical sensing device provided in an embodiment of the present application. The driving thin film transistor T2 is used for converting the charge change in the optical sensor into a current change; when the reset thin film transistor D1 is turned on, resetting the PD point potential to a reset voltage (Vreset) to realize the reset of the optical sensor; when the reset thin film transistor D1 is turned off, the phase starts to be entered, and the PD point potential is lowered due to accumulation of photo-charges; the switching thin film transistor D3 controls signal output to cut off inter-line interference.
In the embodiment of the application, Vreset and Vdd share the same signal trace, so that the noise interference influence caused by the increase of the trace is reduced. In combination with the embodiment of the present application, an orthographic projection of the photosensitive device 100 on the thin film transistor layer 90 is substantially not overlapped with a thin film transistor in the thin film transistor layer 90, so as to reduce interference of capacitance transformation caused by overlapping on noise brought by PIN.
In addition, in the embodiment of the present application, the PIN and the reset thin film transistor D1, the driving thin film transistor D2, and the switching thin film transistor D3 are all substantially non-overlapping in arrangement. When the switching thin film transistor D3 is set, a double-gate transistor structure may be used to control signal output and cut off inter-row interference. In a specific application, the thin film transistor TFT may adopt various structures in the prior art, and the present application is not limited thereto, and includes, for example, functional layers such as a Buffer layer, a P-Si layer, a GI layer, a Gate layer, an ILD layer, and an SD layer.
The lens layer 10 is provided with a plurality of lenses 110, the lenses 110 are arranged in one-to-one correspondence with the pixel units on the display panel 1, and the orthographic projection of the center of the lens 110 on the display panel 1 is overlapped with the center of the pixel unit.
When fingerprint identification, when the finger touches the display screen, the light restraint layer can be close to the screening of collimation with the light of (phi-theta, phi + theta) small angle, makes it reach photosensitive PIN in below, and photosensitive PIN can detect the intensity of taking out the light, and the energy of diffuse reflection light is different downwards by valley and ridge, and the light intensity that the sensor array detected and obtained is different, acquires fingerprint information from this. In addition, the shielding layer can shield strong external ambient light within the angle range of (0-phi-theta), so that the interference of the ambient light can be further weakened, and the fingerprint performance is improved.
In the embodiment of the present application, the pixel units include a red pixel unit R, a green pixel unit G, and a blue pixel unit B arranged in an array. Although each pixel is described as including an R sub-pixel unit, a G pixel unit, and a B pixel unit, the present invention is not limited thereto. The colors of the pixel cells may also be described as a first color, a second color, and a third color, which may also be cyan, magenta, and yellow. Further, the pixel may include a white pixel unit.
In the embodiment of the present application, the arrangement of the pixel units in each pixel unit is not limited, and the arrangement of the pixel units may be a stripe arrangement, an island arrangement, a mosaic arrangement, or a delta arrangement. In application, different settings can be performed according to different devices or application scenes.
Note that in the present embodiment, in the description direction, "above" and "upper" refer to a direction from the photosensitive device layer 30 to the lens layer 10, and "below" and "lower" refer to a direction from the lens layer 10 to the photosensitive device layer 30. "height" refers to the layer height in the up-down direction. "Aperture" refers to the diameter of the opening 70 in a plane parallel to the photosensitive device layer 30. In the embodiment of the present application, it is exemplified that the opening 70 is a circle or a square, and when the opening 70 is a circle, the "aperture" is the diameter of the opening 70, and when the opening 70 is a square, the "aperture" is the side length of the square.
Example one
In the embodiment of the present application, as shown in fig. 2, the light restriction layer 20 includes a first diaphragm layer 601 contacting the photosensitive functional layer 80, and a second diaphragm layer 602 and a third diaphragm layer 603 disposed above the first diaphragm layer 601. The first diaphragm layer 601 comprises a first transparent layer 401 and a first shading layer 501 arranged on the lower surface of the first transparent layer 401, and a first opening 701 is arranged on the first shading layer 501; the second diaphragm layer 602 includes a second transparent layer 402 and a second light shielding layer 502 disposed on a lower surface of the second transparent layer 402, and a second opening 702 is disposed on the second light shielding layer 502; the third aperture layer 603 includes a third transparent layer 403 and a third light shielding layer 503 disposed on a lower surface of the third transparent layer 403, and a third opening 703 is disposed on the third light shielding layer 503.
In the embodiment of the present application, the optical sensor device further includes a filter film layer disposed in the transparent layer 40 of one of the stop layers 60, and when disposed, the filter film layer may be selected according to different device or application scenarios, which is not limited in the present application.
In the embodiment of the present application, an orthographic projection of the center of the first opening 701 on the photosensitive functional layer 80 overlaps with the center of the photosensitive device 100. The centers of the second opening 702 and the third opening 703 are both located on the central axis of the light-transmitting hole. In the embodiment of the present application, the aperture of the first opening 701 is w1, the aperture of the second opening 702 is w2, and the aperture of the third opening 703 is w 3; the height of the first transparent layer 401 is h1, the height of the second transparent layer 402 is h2, the height of the third transparent layer 403 is h3, and the heights of the first light shielding layer 501, the second light shielding layer 502 and the third light shielding layer 503 are all h.
In the embodiment of the present application, in order to realize that the light passing hole 120 is configured to allow incident light rays with an incident angle in a range of (Φ - θ, Φ + θ) to impinge on the photo-sensing device layer 30, the following formula relationship needs to be satisfied for each parameter:
H＝
{n1*w2/[4hs(ns-1)]-(3hn1hs-2n1hs)/(2ns 2-2ns)}*tan[arcsin(sinΦ/ns)]； (1)
where H is the height of the light confinement layer 20, and H is H1+ H2+ H3+ H4+ 3H.
In the embodiments of the present application, n is exemplified1The refractive index of each transparent layer 40 is in the range of 1.4 to 1.7. n issThe refractive index of the material of the lens layer 10 is 1.5-2.0, hsIs the height of the lens layer 10, hsThe value range of (A) is 5 um-25 um; w is the diameter of the lens 110, and the value range of w is 2 um-60 um.
H is the thickness of the shielding layer of 0.1-2 um (neglecting the influence of the thickness h in the calculation design of other parameters) through the formula (1); 42 degrees < phi <70 degrees, and the value range of the obtained H is 50 um-120 um.
It should be noted that, in the embodiment of the present application, it is assumed that the thicknesses of the light shielding layers 50 are the same, and in different embodiments, the thicknesses may be adjusted as needed, and the embodiment of the present application is only an exemplary illustration.
In the embodiment of the present application, when the limit position is reached via the light incident from the upper surface of the light ray restriction layer 20 and the light incident from the lower surface of the restriction layer, the limit value of the width of each aperture can be obtained. As shown in fig. 5, assuming that the light rays incident on the lens 110 are all parallel light rays, in the embodiment of the present application, based on allowing the incident light rays in the range of the incident angle (phi-theta, phi + theta), the incident parallel light rays are assumed to be three groups of parallel light rays phi-theta, phi + theta respectively, and after the parallel light rays with the angle phi are incident on the lens 110, the parallel light rays are converged at the center P1 of the first opening 701; when parallel light at an angle of phi-theta is incident on the lens 110, it is converged at the edge P2 of the first opening 701; when parallel light at an angle of + θ is incident on the lens 110, it is converged at the other edge P3 of the first opening 701.
Extreme positions of the second and third openings 702 and 703 are as shown in fig. 5, assuming that the extension of the light ray at P2 and the extension of the light ray at P3 converge at O, where the distance from O to the lens 110 is H ', H' > H. In the embodiment of the present application, in order to achieve a better light shielding effect, the aperture of the second opening 702 and the aperture of the third opening 703 are adjusted, and a reduced aperture value can achieve a better effect.
In the embodiment of the application, researches show that the following relation is obtained, so that strong external environment light in a (0, phi-theta) angle range can be shielded, and the influence of the environment light is weakened. The dimensional relationship of the respective diaphragm layers 60 can be obtained by the geometrical relationship of the light restriction layers 20.
w3＝w*(H-h3)/H (2)
w2＝w*(H-h3-h2)/H (3)
w1＝{H+(n1/ns)*hs*tan[arcsin(sinΦ/ns)}*tanθ (4)
The height values can be calculated and obtained through the expressions (2), (3) and (4), and the influence of the thickness of the shielding layer is ignored in the calculation process. In the present application, θ is exemplified to range from 1 ° to 10 °; the value range of h1 is 40 um-70 um; the value range of w1 is 1 um-20 um; the value range of h2 is 5 um-25 um; the value range of w2 is 5 um-60 um; the value range of h3 is 5 um-25 um; the value range of w3 is 5 um-60 um.
The centers of the M1, M2 and M3 openings 70 are defined in a top view (i.e., parallel to the reference plane of the photosensitive device layer 30) to be shifted from the center of the lens 110 by t1X, t2X and t3X in the X direction and by t1Y, t2Y and t3Y in the Y direction, respectively.
Fig. 5 is a cross-sectional view in the X direction in the embodiment of the present application. As can be seen from the figure:
t1x＝H*tan[arcsin(sinΦ/ns)] (5)
t2x＝(h2+h3)*tan[arcsin(sinΦ/ns)] (6)
t3x＝h1*tan[arcsin(sinΦ/ns)] (7)
the respective X-direction offset values can be obtained by calculation through the above expressions (5), (6), and (7). In this application, the value range of t1x is exemplarily: 10um to 30 um; the value range of t2x is: 5um to 25 um; the value range of t3x is: 2um to 15 um.
As shown in fig. 6, in the embodiment of the present application, the center of the first opening 701 corresponds to the center of the PIN in the layer of the photosensitive device 100, and the offset value in the Y direction can be obtained by the offset relationship in the X direction and the offset relationship in the Y direction based on the projection relationship.
t1y＝t1x*tanΦ (8)
t2y＝t2x*tanΦ (9)
t3y＝t3x*tanΦ (10)
The respective X-direction offset values can be obtained by calculation through the above expressions (5), (6), and (7). In this application, the value range of t1y is exemplarily: 25um to 70 um; the value range of t2y is: 20um to 60 um; the value range of t3y is: 10um to 30 um.
It should be noted that in the embodiment of the present application, the X direction may be a direction of the row array of lenses 110 in the lens layer 10, the Y direction may be a direction of the column array of lenses 110 in the lens layer 10, and in some embodiments, the X direction and the Y direction may be interchanged.
In the embodiment of the present application, fig. 7 illustrates a structural diagram and a light ray diagram of an optical sensing device, wherein light rays in the lens 110 can allow incident light rays with an incident angle in a range of (phi-theta, phi + theta) to strike the photosensitive device layer 30, while light rays incident from adjacent lenses 110 can be blocked, so as to further reduce the influence of light rays between the inner lenses 110 in the lens layer 10.
In the present embodiment, the size values between the respective hierarchies are shown in the following table.
The optical device provided in the embodiment of the application obtains a T-FWHM curve, which is a relation between transmittance and FWHM through spectral measurement, as shown in fig. 8, it is found through the curve that when the full-width-at-half-maximum resolution FWHM reaches 7 °, and the angle of the inclined central light ray is 55 °, the ambient light within an angle range of 0 ° to 48 ° can be shielded, and the influence of the ambient light within the angle range on the ambient light of the optical sensor is reduced.
Example two
As shown in fig. 3, in the embodiment of the present application, the light restriction layer 20 includes a first diaphragm layer 601 ' in contact with the photosensitive functional layer 80 and a second diaphragm layer 602 ' disposed above the first diaphragm layer 601 '. The first diaphragm layer 601 'comprises a first transparent layer 401' and a first shading layer 501 'arranged on the lower surface of the first transparent layer 401', and a first opening 701 'is arranged on the first shading layer 501'; the second aperture layer 602 'includes a second transparent layer 402' and a second light shielding layer 502 'disposed on a lower surface of the second transparent layer 402', and the second light shielding layer 502 'has a second opening 702' disposed thereon.
In the embodiment of the present application, an orthographic projection of the center of the first opening 701' on the photosensitive functional layer 80 overlaps with the center of the photosensitive device 100. In the embodiment of the present application, the aperture of the first opening 701 'is w1, and the aperture of the second opening 702' is w 2; the height of the first transparent layer 401 'is h1, the height of the second transparent layer 402' is h2, and the heights of the first light shielding layer 501 'and the second light shielding layer 502' are both h.
In the embodiment of the present application, the first aperture layer 601 'and the second aperture layer 602' have the same structures as the first aperture layer 601 and the third aperture layer 603 in the first embodiment, and in calculating each parameter, reference may be made to the parameter settings provided in the first embodiment.
In the embodiment of the present application, in order to further improve the effect on the ambient light, the first opening 701 'on the first stop layer 601' is further adjusted. In addition to satisfying the relationship as formula (2) provided in the present application, the following relationship is further satisfied.
w2 ═ K × w1, where K is a coefficient, where 2 < K < 3.
In specific setting, the value of k may be adjusted according to different application devices or application scenes, and by further reducing the aperture of the second opening 702' in this embodiment, ambient light may be further shielded, light rays in the lens 110 may allow incident light rays with an incident angle within a range of (phi-theta, phi + theta) to strike the photosensitive device layer 30, and light rays incident from adjacent lenses 110 may be shielded, so as to further reduce the influence of light rays between the inner lenses 110 in the lens layer 10.
As shown in fig. 9, the present application provides a method for manufacturing an optical sensor device, for manufacturing the optical sensor device as described in any one of the above, the method comprising:
s01, providing a base substrate 901; in the embodiment of the present application, the substrate 901 is a rigid substrate or a flexible substrate, wherein the rigid substrate may be made of transparent glass, transparent plastic, or the like, and the flexible substrate may be made of a polymer material such as Polyimide (PI), Polyethersulfone (PES), Polycarbonate (PC), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), Polyarylate (PAR), or glass Fiber Reinforced Plastic (FRP).
And S02, forming a thin film transistor layer 90 on the substrate base plate 901. In this embodiment, the thin film transistor in the thin film transistor layer 90 may have a top gate structure or a bottom gate structure, which is not limited in this application. In the embodiment of the present application, a bottom gate structure is exemplified, and when the application is performed, the selection may be performed according to different devices or application scenarios.
In the embodiment of the present application, a buffer layer 902 is formed on the substrate base 901; forming an active layer 903 on the buffer layer 902; forming a gate insulating layer 904 on the active layer 903; forming a gate electrode 905 on the gate insulating layer 904; forming an interlayer dielectric layer 906 on the gate 905; and forming a source drain metal layer 907 on the interlayer dielectric layer 906.
S03, forming a photosensitive functional layer 80 on the thin-film transistor layer 90, wherein the orthographic projection of the photosensitive device 100 on the thin-film transistor layer 90 in the photosensitive functional layer 80 does not overlap with the thin-film transistors in the thin-film transistor layer 90.
In the embodiment of the present application, the photosensitive functional layer 80 includes a photosensitive device 100, wherein the photosensitive device 100 includes a first electrode 101 made of a metal conductive material, a second electrode 102 made of a transparent conductive material, and a photosensitive layer PIN located between the first electrode 101 and the second electrode 102.
In the embodiment of the present application, the first electrode 101 is a source-drain metal layer of the thin film transistor, so that during the setting, a photosensitive layer PIN is directly formed on the source-drain metal layer, and a transparent ITO electrode is formed on the photosensitive layer PIN to form the second electrode 102.
In the embodiment of the present application, the photosensitive functional layer 80 further includes a plurality of shielding layers disposed above the photosensitive device 100, the shielding layers include a passivation layer and a transparent common electrode layer, and when disposed, a covering layer 801 is formed on the second electrode 102; forming an organic layer 802 on the capping layer; forming a first passivation layer 803 on the organic layer; forming a first transparent common electrode layer 804 on the first passivation layer 803; forming a second passivation layer 805 on the first transparent common electrode layer 804; a second transparent electrode 806 is formed on the second passivation layer 805.
Wherein, the covering layer and the first passivation layer are patterned to form a window area, an orthographic projection of the window area on the substrate is not overlapped with an orthographic projection of the thin film transistor on the thin film transistor layer 90, and the window area is used for receiving light and is a light receiving hole of the PIN device. The first common electrode layer covers the window region and contacts with the second electrode 102, and the first common electrode layer is used as a lead of the second electrode 102 layer to realize the electrical connection of the second electrode 102. By removing the materials of the covering layer, the flat layer and the first passivation layer in the window area, the structural layer covering the window area can be reduced, and therefore reflection of the structural layer in the window area is reduced. Through the arranged multilayer shielding layers, wherein the second transparent common electrode layer covers the whole display panel 1, the influence of parasitic capacitance on the PIN device can be prevented.
And S04, alternately forming a light shielding layer 50 and a transparent layer 40 on the photosensitive functional layer 80 to form a light restriction layer 20, wherein the light shielding layer 50 is provided with openings 70, and the openings 70 on the light restriction layer 20 are alternately arranged to form light passing holes 120.
In the embodiment of the present application, the material of the light shielding layer 50 may be a black light shielding material, for example, black ink or the like. The material of the transparent layer 40 may be Resin (transparent material), SOG (Silicon On Glass, Silicon-Glass bonded structure material), BCB (benzocyclobutene), or the like.
S05, forming a lens layer 10 on the light restriction layer 20. Wherein the centers of the lenses 110 in the lens layer 10 coincide with and correspond one-to-one with the centers of the individual pixel units on the display panel 1. In the embodiment of the present application, the pixel units on the display panel 1 may be red pixel units R, green pixel units G, and blue pixel units B arranged in an array.
It should be noted that the "patterning process" referred to in this application includes processes of depositing a film, coating a photoresist, mask exposure, developing, etching, and stripping a photoresist. The deposition may employ any one or more selected from sputtering, evaporation and chemical vapor deposition, the coating may employ any one or more selected from spray coating and spin coating, and the etching may employ any one or more selected from dry etching and wet etching. "thin film" refers to a layer of a material deposited or coated onto a substrate. The "thin film" may also be referred to as a "layer" if it does not require a patterning process throughout the fabrication process. When the "thin film" requires a patterning process throughout the fabrication process, it is referred to as a "thin film" before the patterning process and a "layer" after the patterning process. The "layer" after the patterning process includes at least one "pattern".
In addition, the phrase "a and B are disposed in the same layer" in the present application means that a and B are simultaneously formed by the same patterning process. "the orthographic projection of A includes the orthographic projection of B" means that the orthographic projection of B falls within the orthographic projection range of A, or the orthographic projection of A covers the orthographic projection of B.
The present application provides a display apparatus comprising a display panel 1 and an optical sensing device as described in any of the above.
The display device in the embodiment of the application may be a television, or may be a device having a display function, such as a PC, a smart phone, a tablet computer, an e-book reader, an MP3(Moving Picture Experts Group Audio Layer III, motion Picture Experts compression standard Audio Layer) player, an MP4(Moving Picture Experts Group Audio Layer IV, motion Picture Experts compression standard Audio Layer) player, a portable computer, or the like.
It will be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like, as used herein, refer to an orientation or positional relationship indicated in the drawings that is solely for the purpose of facilitating the description and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and is therefore not to be construed as limiting the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
Unless defined otherwise, technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. Terms such as "disposed" and the like, as used herein, may refer to one element being directly attached to another element or one element being attached to another element through intervening elements. Features described herein in one embodiment may be applied to another embodiment, either alone or in combination with other features, unless the feature is otherwise inapplicable or otherwise stated in the other embodiment.
The present invention has been described in terms of the above embodiments, but it should be understood that the above embodiments are for purposes of illustration and description only and are not intended to limit the invention to the scope of the described embodiments. It will be appreciated by those skilled in the art that many variations and modifications may be made to the teachings of the invention, which fall within the scope of the invention as claimed.
Claims (10)
1. An optical sensing device is characterized in that the light restriction layer is provided with a light through hole, the light through hole is obliquely arranged, the light through hole is configured to allow incident light rays with an incident angle in a range of (phi-theta, phi + theta) to be incident on the photosensitive device layer, phi is an included angle between an aperture center line of the light through hole and a central axis of the lens layer, phi ranges from 42 degrees to 70 degrees, and theta ranges from 1 degree to 10 degrees.
2. The optical sensing device of claim 1, wherein the photosensitive device layer comprises a photosensitive functional layer and a thin film transistor layer which are stacked, and an orthographic projection of a photosensitive device in the photosensitive functional layer on the thin film transistor layer is not overlapped with a thin film transistor in the thin film transistor layer.
3. The optical sensing device according to claim 1, wherein a plurality of lenses are disposed on the lens layer, the lenses are disposed in one-to-one correspondence with pixel units on a display panel, and an orthographic projection of a center of the lens on the display panel overlaps with a center of the pixel unit.
4. The optical sensor device according to claim 1, wherein the light restriction layer comprises at least two diaphragm layers, each diaphragm layer is provided with openings, and at least two layers of the openings are staggered to form the light passing hole.
5. The optical sensing device of claim 4, wherein the shape of the opening is triangular, square or circular.
6. The optical sensing device of claim 4, wherein the stop layer comprises a transparent layer and a light-shielding layer disposed on a surface of the transparent layer facing away from the lens layer, the light-shielding layer having the opening disposed thereon.
7. The optical sensor device according to claim 2, wherein the light confinement layer comprises a first aperture layer in contact with the photosensitive functional layer, the first aperture layer is provided with a first opening, and an orthographic projection of a center of the first opening on the photosensitive functional layer overlaps with a center of the photosensitive device.
8. The optical sensing device of claim 6, further comprising a filter film layer disposed in a transparent layer of one of the stop layers.
9. A method for producing an optical sensor device, for producing an optical sensor device according to any one of claims 1 to 8, the method comprising:
providing a substrate base plate;
forming a thin film transistor layer on the substrate base plate;
forming a photosensitive functional layer on the thin film transistor layer, wherein an orthographic projection of a photosensitive device on the thin film transistor layer in the photosensitive functional layer is not overlapped with a thin film transistor in the thin film transistor layer;
alternately forming a light shielding layer and a transparent layer on the photosensitive functional layer to form a light ray restraint layer, wherein the light shielding layer is provided with openings, and the openings on the light ray restraint layer are alternately arranged to form light through holes;
forming a lens layer on the light confinement layer.
10. A display device comprising a display panel and an optical sensor device according to any one of claims 1 to 8.
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| CN202111502584.9A CN114255486A (en) | 2021-12-09 | 2021-12-09 | Optical sensing device, preparation method thereof and display device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2024040492A1 (en) * | 2022-08-25 | 2024-02-29 | 京东方科技集团股份有限公司 | Optical sensor device and display apparatus |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2024040492A1 (en) * | 2022-08-25 | 2024-02-29 | 京东方科技集团股份有限公司 | Optical sensor device and display apparatus |
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