WO2021007975A1 - 一种显示面板及其制备方法、显示装置 - Google Patents

一种显示面板及其制备方法、显示装置 Download PDF

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Publication number
WO2021007975A1
WO2021007975A1 PCT/CN2019/112227 CN2019112227W WO2021007975A1 WO 2021007975 A1 WO2021007975 A1 WO 2021007975A1 CN 2019112227 W CN2019112227 W CN 2019112227W WO 2021007975 A1 WO2021007975 A1 WO 2021007975A1
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Prior art keywords
layer
thin film
film transistor
area
display panel
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PCT/CN2019/112227
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English (en)
French (fr)
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白思航
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武汉华星光电半导体显示技术有限公司
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Priority to US16/613,669 priority Critical patent/US20210335924A1/en
Publication of WO2021007975A1 publication Critical patent/WO2021007975A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/868—Arrangements for polarized light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light

Definitions

  • the invention relates to the field of display, in particular to a display panel, a preparation method thereof, and a display device.
  • Full screen technology is a relatively broad definition of the design of ultra-high screen-to-body mobile phones in the display industry.
  • the literal explanation is that the front of the mobile phone is all a screen, and the display interface of the mobile phone is completely covered by the screen.
  • the four frame positions of the mobile phone are designed without borders, pursuing an ultra-high screen ratio close to 100%.
  • it is limited by the indispensable basic functions of other mobile phones such as the front camera of the mobile phone, the handset, the distance sensor and the light sensor.
  • the mobile phone is only a mobile phone with a super high screen-to-body ratio for the time being, and there is no mobile phone that can achieve 100% of the front screen of the mobile phone, the so-called "Liu Haiping". Coupled with the ultra-narrow frame design, its real screen-to-body ratio (unofficially promoted) can reach about 80% to 90%, which is still a certain distance away from a 100% full screen.
  • the industry has tried to reduce the bonding area.
  • the most effective way is side bonding technology to fan out part of the screen.
  • the wiring area, the driver IC, and the flexible circuit board are bent to the back of the screen for bonding, which can effectively reduce the length of the lower bonding area; but the upper bonding area generally has a front camera, and you want to continue to reduce it
  • the industry uses "bangs" or "water drop” screens to reduce the boundary and increase the screen-to-body ratio.
  • the camera under the screen is in the non-display area.
  • the camera can be taken normally during shooting, and the light transmittance is relatively high. High, it can be displayed normally when not recording.
  • the present invention provides a display panel, a manufacturing method thereof, and a display device to solve the technical problem that no matter what kind of design in the prior art, the under-screen camera is in the non-display area.
  • the present invention provides a display panel, a manufacturing method thereof, and a display device to solve the problem that a true "full screen" cannot be realized in order to ensure the light transmittance of the imaging area in the prior art.
  • the present invention provides a display panel including an imaging area and a non-imaging area surrounding the imaging area;
  • the display panel includes: a substrate; a flexible layer disposed on the substrate, wherein The flexible layer is a transparent flexible layer corresponding to the imaging area;
  • a thin film transistor layer is provided on the flexible layer, and the thin film transistor layer includes: a plurality of first thin film transistor units arranged in the imaging area and For the plurality of second thin film transistor units in the non-imaging area, the arrangement density of the first thin film transistor units is smaller than the arrangement density of the second thin film transistor units.
  • the material of the flexible layer includes polyimide material, wherein the flexible layer corresponding to the imaging area is made of transparent polyimide material.
  • the ratio of the density of the first thin film transistor unit to the density of the second thin film transistor unit is between 1:2 and 1:30.
  • the display panel further includes an organic light-emitting layer, which is provided on the thin film transistor layer; an encapsulation layer, which is provided on the organic light-emitting layer; a touch layer, which is provided on the encapsulation layer; an optical film structure Layer, arranged on the touch layer.
  • the optical film structure layer includes: a polarizer layer, arranged on the touch layer, the polarizer layer is provided with a light transmission hole corresponding to the imaging area; optical glue, arranged on the polarizer The layer is far away from the touch layer; the protective layer is arranged on the side of the optical glue away from the polarizer layer.
  • the present invention also provides a method for manufacturing a display panel.
  • the display panel includes an imaging area and a non-imaging area surrounding the imaging area, including providing a substrate; depositing a flexible layer on the substrate, wherein the corresponding The imaging area is deposited using a transparent flexible material; a thin film transistor layer is formed on the flexible layer; a first thin film transistor area is formed in the imaging area, and a number of evenly arranged first thin film transistor areas are formed in the first thin film transistor area.
  • a thin film transistor unit a second thin film transistor area is formed in the non-imaging area, and a number of second thin film transistor units are evenly arranged in the second thin film transistor area; wherein, all of the corresponding non-imaging area
  • the density of the second thin film transistor unit is smaller than the density of the first thin film transistor unit corresponding to the imaging area.
  • the material for forming the flexible layer is a polyimide material, wherein the flexible layer corresponding to the imaging area is made of a transparent polyimide material.
  • the manufacturing method of the display panel further includes forming an encapsulation layer on the thin film transistor layer; forming a touch control layer on the encapsulation layer; and forming an optical film structure layer on the touch control layer.
  • the optical film structure layer includes a polarizer layer, and a light-transmitting hole is opened in the polarizer layer corresponding to the imaging area.
  • the present invention also provides a display device including the display panel.
  • the display panel, the preparation method thereof, and the display device of the present invention adopt two improvement schemes to increase the light transmittance of the camera area.
  • the yellow flexible layer of the camera area is replaced with transparent PI; at the same time, the PPI ( Pixel density) is reduced, and the extremely sparse array is used to play the role of displaying without affecting the light transmission; the polarizer still uses the camera opening method to increase the light transmission.
  • FIG. 1 is a schematic diagram of the display panel in Embodiment 1.
  • FIG. 1 is a schematic diagram of the display panel in Embodiment 1.
  • FIG. 2 is a schematic diagram of the display panel in the second embodiment.
  • FIG. 3 is a schematic diagram of the display panel in the third embodiment.
  • Embodiment 4 is a distribution diagram of thin film transistor units in Embodiment 2.
  • FIG. 5 is a top view of the display panel in the third embodiment.
  • FIG. 6 is a schematic diagram of the structural layer of the optical film in Example 3.
  • FIG. 6 is a schematic diagram of the structural layer of the optical film in Example 3.
  • FIG. 7 is a schematic diagram of the display device in the third embodiment.
  • the display panel 10 includes a substrate 110 and a flexible layer 120.
  • the display panel 10 includes a camera area 101 and a non-camera area 102 surrounding the camera area 101.
  • the camera area 101 is used to load a camera. When the camera is capturing images, external light enters the camera area 101.
  • a photo or video is formed in the camera and processed by the internal processor of the camera, in order to ensure the picture quality of the photo or the video, while avoiding the influence of the “drop screen” and “notch screen” in the prior art
  • the screen-to-body ratio of the display panel 10 needs to increase the light transmittance of the imaging area 101 area.
  • the flexible layer 120 is disposed on the substrate 110.
  • the material of the flexible layer 120 is a thin polyimide material, which is a thin-film insulating material with better performance, generally yellow and transparent film.
  • the flexible layer 120 corresponding to the imaging area 101 is a transparent flexible layer 1201, which not only has the technical effect of insulation, but also can increase the light transmittance of the imaging area 101.
  • the display panel 10 of the present invention includes a substrate 110, a flexible layer 120 and a thin film transistor layer 130.
  • the display panel 10 includes a camera area 101 and a non-camera area 102 surrounding the camera area 101.
  • the camera area 101 is used to load a camera. When the camera is capturing images, external light enters the camera area 101.
  • a photo or video is formed in the camera and processed by the internal processor of the camera, in order to ensure the picture quality of the photo or the video, while avoiding the influence of the “drop screen” and “notch screen” in the prior art
  • the screen-to-body ratio of the display panel 10 needs to increase the light transmittance of the imaging area 101 area.
  • the thin film transistor layer 130 is provided on the flexible layer 120. Since the thin film transistor layer 130 is composed of a plurality of thin film transistor units, and the thin film transistor units have a greater influence on the light transmittance, in this embodiment, the thin film transistor layer 130 is divided into a first thin film transistor area 131 and a second thin film transistor area 132, where the first thin film transistor area 131 corresponds to the imaging area 101, and the first thin film transistor area A number of first thin film transistor units 1311 are uniformly distributed in the region 131, and the gap between the first thin film transistor units 1311 is relatively wide, usually 1/2 to 1/30 of the gap between the general thin film transistor units in the prior art Between, generally 1/9, so that light can pass through the gap between the first thin film transistor units 1311 and enter the camera.
  • the second thin film transistor area 132 corresponds to the non-imaging area 102.
  • a plurality of second thin film transistor units 1321 are uniformly distributed in the second thin film transistor area 132, and the gap between the second thin film transistor units is The common design in the industry is mainly to ensure the color gamut and color brightness of the display panel 10.
  • the display panel 10 of the present invention includes a substrate 110 and a flexible layer 120, a thin film transistor layer 130, an organic light emitting layer 140, an encapsulation layer 150, a touch layer 160, and an optical film structure layer. 170.
  • the display panel 10 includes a camera area 101 and a non-camera area 102 surrounding the camera area 101.
  • the camera area 101 is used for loading a camera.
  • external light passes through
  • the camera area 101 enters the camera and is processed by the internal processor of the camera to form a photo or video.
  • "Liu Haiping" etc. affect the screen-to-body ratio of the display panel 10, and the light transmittance of the imaging area 101 needs to be increased.
  • the flexible layer 120 is disposed on the substrate 110, and the material of the flexible layer 120 is a polyimide film, which is a thin-film insulating material with better performance, and is generally a yellow transparent film.
  • the flexible layer 120 corresponding to the imaging area 101 is a transparent flexible layer 1201, which not only has the technical effect of insulation, but also can increase the light transmittance of the imaging area 101.
  • the thin film transistor layer 130 is provided on the flexible layer 120. Since the thin film transistor layer 130 is composed of a number of thin film transistor units, the thin film transistor units have a greater influence on the light transmittance. In this embodiment, the The thin film transistor layer 130 is divided into a first thin film transistor area 131 and a second thin film transistor area 132. The first thin film transistor area 131 corresponds to the imaging area 101, and the first thin film transistor area 131 is evenly distributed A number of first thin film transistor units 1311, the gap between the first thin film transistor units 1311 is relatively wide, usually between 1/2 to 1/30 of the gap between the general thin film transistor units in the prior art, generally 1 /9, so that light can pass through the gap between the first thin film transistor units 1311 and enter the camera.
  • the second thin film transistor area 132 corresponds to the non-imaging area 102.
  • a number of second thin film transistor units 1321 are evenly distributed in the second thin film transistor area 132.
  • the gaps between the second thin film transistor units 1321 are It is commonly used in the industry to ensure the color gamut and color brightness of the display panel 10.
  • the organic light-emitting layer 140 is disposed on the thin film transistor layer 130.
  • the organic light-emitting layer 140 includes a transparent electrode and a non-transparent electrode, wherein the non-transparent electrode and the transparent electrode are both disposed in the non-imaging area 102 in.
  • the encapsulation layer 150 is disposed on the organic light-emitting layer 140, the touch layer 160 is disposed on the encapsulation layer 150; the optical film structure layer 170 is disposed on the touch layer 160.
  • the optical film structure layer 170 has a light-transmitting hole 171 corresponding to the imaging area 101.
  • the optical film structure layer 170 includes a polarizer layer 1701, an optical glue 1702, and a protective layer. 1703, a polarizer layer 1701 is provided on the touch layer 160, and the light-transmitting hole 171 is provided at the polarizer layer corresponding to the imaging area 101 to increase the light transmittance at the imaging area 101 .
  • the optical glue 1702 is arranged on the side of the polarizer layer 1701 away from the touch layer 160, and the protective layer 1703 is arranged on the side of the optical glue 1702 away from the polarizer layer 1701 to protect the polarizer layer 1701, to prevent its wear.
  • a manufacturing method of the display panel is also provided, and the specific steps are as follows:
  • a flexible layer 120 is deposited on the substrate 110, wherein a transparent flexible layer material is deposited corresponding to the imaging area to form a transparent flexible layer 1201.
  • a first thin film transistor area 131 is formed in the imaging area 101, and a number of first thin film transistor units 1311 evenly arranged are formed in the first thin film transistor area 131;
  • a second thin film transistor area 132 is formed in the non-imaging area 102, and a number of second thin film transistor units 1321 are evenly arranged in the second thin film transistor area 132; wherein, all of the second thin film transistor units 1321 corresponding to the non-imaging area 102 are formed.
  • the density of the second thin film transistor unit is smaller than the density of the first thin film transistor unit corresponding to the imaging area 101. Under the premise of ensuring the display quality of the display panel 10, the density of the first thin film transistor unit 1311 is reduced to increase The light transmittance of the imaging area 101.
  • An encapsulation layer 150 is formed on the thin film transistor layer 130; a touch layer 160 is formed on the encapsulation layer 150; an optical film structure layer 170 is formed on the touch layer 160, and the optical film structure layer includes
  • the polarizer layer 1701 defines a light-transmitting hole 171 in the polarizer layer 1701 corresponding to the imaging area 101.
  • the display device 1 of the present invention includes the display panel 10, and the display device 1 may be a display device such as a mobile phone, a computer, or a television.

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Abstract

一种显示面板及其制备方法、显示装置。该显示面板包括基板（110）、柔性层（120）、薄膜晶体管层（130），柔性层（120）对应摄像区（101）为透明柔性层，薄膜晶体管层（130）包括：设置在摄像区（101）的多个第一薄膜晶体管单元（1311）和设置在非摄像区（102）的多个第二薄膜晶体管单元（1321），第一薄膜晶体管单元（1311）的排布密度小于第二薄膜晶体管单元（1321）的排布密度。

Description

一种显示面板及其制备方法、显示装置 技术领域
本发明涉及显示领域，特别涉及一种显示面板及其制备方法、显示装置。
 背景技术
全面屏技术，是显示业界对于超高屏占比手机设计的一个比较宽泛的定义。从字面上解释就是手机的正面全部都是屏幕，手机的显示界面被屏幕完全覆盖，手机的四个边框位置都是采用无边框设计，追求接近100％的超高屏占比。但受限于手机前置摄像头、手机听筒、距离传感器和光线传感器等其他手机不可或缺的基本功能需要，目前，手机屏幕上方都需要留有一定缺口来安置上述功能部件，业界宣称的全面屏手机暂时只是超高屏占比的手机，并没有能做到手机正面屏占比100％的手机，即所谓的“刘海屏”。加上超窄的边框设计，其真实屏占比(非官方宣传)可以达到80％～90％左右，离100％全面屏还有一定距离。
为了实现小尺寸手机的窄边框设计，实现手机更大的屏占比，业界尝试将邦定区减小，针对减小下边界，最有效的办法是侧面邦定技术，将屏幕的一部分扇出区走线区及驱动IC及柔性电路板一起弯折到屏幕的背面进行邦定，可有效减小下邦定区域的长度；但上邦定区域一般会放置前置摄像头，想要继续减小上边界，业界采用“刘海”或“水滴”屏来实现边界的缩减化，增加屏占比。
无论哪种设计，屏下摄像头都是在非显示区域内，为了实现真正的全面屏，提高客户的视觉感受，我们需要将摄像头结合在显示区域，即摄像时可以正常拍照，且透光率较高，不摄像时可以正常显示。
 技术问题
为了解决上述技术问题：本发明提供了一种显示面板及其制备方法、显示装置，以解决现有技术中无论哪种设计，屏下摄像头都是在非显示区域内的技术问题。
 技术解决方案
为了解决上述问题，本发明提供了一种显示面板及其制备方法、显示装置用以解决现有技术中为了保证摄像区的透光率从而无法实现真正的“全面屏”的问题。
解决上述问题的技术方案是：本发明提供了一种显示面板，包括摄像区和围绕所述摄像区的非摄像区；所述显示面板包括：基板；柔性层，设于所述基板上，其中，所述柔性层对应所述摄像区为透明柔性层；薄膜晶体管层，设于所述柔性层上，所述薄膜晶体管层包括：设置在所述摄像区多个第一薄膜晶体管单元和设置在所述非摄像区的多个第二薄膜晶体管单元，所述第一薄膜晶体管单元的排布密度小于所述第二薄膜晶体管单元的排布密度。
进一步的，所述柔性层的材料包括聚酰亚胺材料，其中，所述柔性层对应所述摄像区为透明聚酰亚胺材料。
进一步的，所述第一薄膜晶体管单元的密度与所述第二薄膜晶体管单元的密度比在1:2至1:30之间。
进一步的，所述显示面板还包括有机发光层，设于所述薄膜晶体管层上；封装层，设于所述有机发光层上；触控层，设于所述封装层上；光学膜片结构层，设于所述触控层上。
进一步的，所述光学膜片结构层包括：偏光片层，设于所述触控层上，所述偏光片层对应所述摄像区设有一透光孔；光学胶，设于所述偏光片层远离所述触控层一侧；保护层，设于所述光学胶远离所述偏光片层一侧。
本发明还提供了一种显示面板的制备方法，所述显示面板包括摄像区和围绕所述摄像区的非摄像区，包括提供一基板；在所述基板上沉积一层柔性层，其中，对应所述摄像区采用透明柔性材料沉积；在所述柔性层上形成薄膜晶体管层；在所述摄像区内形成第一薄膜晶体管区，在所述第一薄膜晶体管区内形成若干均匀排布的第一薄膜晶体管单元；在所述非摄像区内形成第二薄膜晶体管区，在所述第二薄膜晶体管区内形成若干均匀排布的第二薄膜晶体管单元；其中，对应所述非摄像区的所述第二薄膜晶体管单元密度小于对应所述摄像区的所述第一薄膜晶体管单元密度。
进一步的，形成所述柔性层的材料为聚酰亚胺材料，其中，对应所述摄像区的所述柔性层采用透明聚酰亚胺材料。
进一步的，所述显示面板的制备方法还包括在所述薄膜晶体管层上形成封装层；在所述封装层形成触控层；在所述触控层上形成光学膜片结构层。
进一步的，所述光学膜片结构层包括偏光片层，在所述偏光片层对应所述摄像区开设一透光孔。
本发明还提供了一种显示装置，包括所述显示面板。
 有益效果
本发明的显示面板及其制备方法、显示装置采用两种改善方案提高摄像头区域的光的透过率，首先将摄像头区域的黄色柔性层采用透明PI替换；与此同时，将摄像头区域的PPI（像素密度） 降低，采用及其稀疏的阵列，起到显示又不影响透光的作用；偏光片依然采用摄像头开孔的方式提高透光率。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是实施例1中的显示面板示意图。
图2是实施例2中的显示面板示意图。
图3是实施例3中的显示面板示意图。
图4是实施例2中的薄膜晶体管单元分布图。
图5是实施例3中的显示面板俯视图。
图6是实施例3中的光学膜片结构层示意图。
图7是实施例3中的显示装置示意图。
图中
1 显示装置；                      10 显示面板；
110 基板；                        120 柔性层；
101 摄像区；                      102非摄像区；
1201 透明聚酰亚胺薄膜；           130 薄膜晶体管层；
131 第一薄膜晶体管区；            132第二薄膜晶体管区；
1311 第一薄膜晶体管单元；         1321 第二薄膜晶体管单元；
140 有机发光层；                  150 封装层；
160 触摸层；                      170 光学膜片结构层；
1411 第一遮挡区；                 1412 第一透光区；
1421 第二遮挡区；                 1422 第二透光区；
171 透光孔；
 本发明的实施方式
以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
实施例1
如图1所示，本实施例中，所述显示面板10包括基板110和柔性层120。
所述显示面板10包括摄像区101和围绕所述摄像区101的非摄像区102，所述摄像区101用于装载摄像头，由于所述摄像头在摄取画面时，外部光线经由所述摄像区101进入所述摄像头内并通过所述摄像头内部处理器处理后形成照片或视频，为了保证所述照片或所述视频的画面质量，同时避免现有技术中的“水滴屏”、“刘海屏”等影响显示面板10的屏占比，需要提高所述摄像区101区域的光线透过率。
所述柔性层120设于所述基板110上，现有技术中，所述柔性层120的材料为聚酰亚胺薄材料，其是一种性能较好的薄膜类绝缘材料，一般为黄色透明薄膜。
对应所述摄像区101的所述柔性层120为透明柔性层1201，既能起到绝缘的技术效果，又可以增加所述摄像区101的光线透过率。
实施例2
如图2所示，本实施例中，本发明的显示面板10包括基板110和柔性层120、薄膜晶体管层130。
所述显示面板10包括摄像区101和围绕所述摄像区101的非摄像区102，所述摄像区101用于装载摄像头，由于所述摄像头在摄取画面时，外部光线经由所述摄像区101进入所述摄像头内并通过所述摄像头内部处理器处理后形成照片或视频，为了保证所述照片或所述视频的画面质量，同时避免现有技术中的“水滴屏”、“刘海屏”等影响显示面板10的屏占比，需要提高所述摄像区101区域的光线透过率。
如图4所示，所述薄膜晶体管层130设于所述柔性层120上，由于薄膜晶体管层130由若干薄膜晶体管单元组成，而薄膜晶体管单元对透光率有较大的影响，在本实施例中，将所述薄膜晶体管层130分为第一薄膜晶体管区131和第二薄膜晶体管区132，其中，所述第一薄膜晶体管区131对应所述摄像区101，在所述第一薄膜晶体管区131中均匀分布有若干第一薄膜晶体管单元1311，所述第一薄膜晶体管单元1311之间的间隙较广，通常为现有技术中一般薄膜晶体管单元之间间隙的1/2至1/30之间，一般为1/9，以方便光线穿过所述第一薄膜晶体管单元1311之间的间隙进入所述摄像头内。
所述第二薄膜晶体管区132对应所述非摄像区102内，在所述第二薄膜晶体管区132中均匀分布有若干第二薄膜晶体管单元1321，所述第二薄膜晶体管单元之间的间隙为业内常用设计，主要是为了保证所述显示面板10的色域和色彩明艳度。
实施例3
如图3所示，本实施例中，本发明的所述显示面板10包括基板110和柔性层120、薄膜晶体管层130、有机发光层140、封装层150、触摸层160和光学膜片结构层170。
如图5所示，所述显示面板10包括摄像区101和围绕所述摄像区101的非摄像区102，所述摄像区101用于装载摄像头，由于所述摄像头在摄取画面时，外部光线经由所述摄像区101进入所述摄像头内并通过所述摄像头内部处理器处理后形成照片或视频，为了保证所述照片或所述视频的画面质量，同时避免现有技术中的“水滴屏”、“刘海屏”等影响显示面板10的屏占比，需要提高所述摄像区101区域的光线透过率。
所述柔性层120设于所述基板110上，所述柔性层120材料为聚酰亚胺薄膜，是一种性能较好的薄膜类绝缘材料，其一般为黄色透明薄膜。
对应所述摄像区101的所述柔性层120为透明柔性层1201，既能起到绝缘的技术效果，又可以增加所述摄像区101的光线透过率。
所述薄膜晶体管层130设于所述柔性层120上，由于薄膜晶体管层130由若干薄膜晶体管单元组成，而薄膜晶体管单元对透光率有较大的影响，在本实施例中，将所述薄膜晶体管层130分为第一薄膜晶体管区131和第二薄膜晶体管区132，其中，所述第一薄膜晶体管区131对应所述摄像区101，在所述第一薄膜晶体管区131中均匀分布有若干第一薄膜晶体管单元1311，所述第一薄膜晶体管单元1311之间的间隙较广，通常为现有技术中一般薄膜晶体管单元之间间隙的1/2至1/30之间，一般为1/9，以方便光线穿过所述第一薄膜晶体管单元1311之间的间隙进入所述摄像头内。
所述第二薄膜晶体管区132对应所述非摄像区102内，在所述第二薄膜晶体管区132中均匀分布有若干第二薄膜晶体管单元1321，所述第二薄膜晶体管单元1321之间的间隙为业内常用设计，主要是为了保证所述显示面板10的色域和色彩明艳度。
所述有机发光层140设于所述薄膜晶体管层130上，所述有机发光层140包括透明电极和非透明电极，其中，所述非透明电极和所述透明电极均设置在所述非摄像区102中。
所述封装层150设于所述有机发光层140上，所述触控层160设于所述封装层150上；所述光学膜片结构层170设于所述触控层160上。
如图6所示，所述光学膜片结构层170对应所述摄像区101开设有一透光孔171，具体的，所述光学膜片结构层170包括偏光片层1701、光学胶1702和保护层1703，偏光片层1701设于所述触控层160上，所述透光孔171设于所述偏光片层对应所述摄像区101处，用于提高所述摄像区101处的透光率。
光学胶1702设于所述偏光片层1701远离所述触控层160一侧，所述保护层1703设于所述光学胶1702远离所述偏光片层1701一侧用以保护所述偏光片层1701，防止其磨损。
为了更好的解释本发明，本实施例中，还提供了所述显示面板的制备方法，其具体步骤如下：
提供一基板110；
在所述基板110上上沉积一层柔性层120，其中，对应所述摄像区采用透明柔性层材料沉积形成透明柔性层1201。
在所述柔性层120上形成薄膜晶体管层130；
在所述摄像区101内形成第一薄膜晶体管区131，在所述第一薄膜晶体管区131内形成若干均匀排布的第一薄膜晶体管单元1311；
在所述非摄像区102内形成第二薄膜晶体管区132，在所述第二薄膜晶体管区132内形成若干均匀排布的第二薄膜晶体管单元1321；其中，对应所述非摄像区102的所述第二薄膜晶体管单元密度小于对应所述摄像区101的所述第一薄膜晶体管单元密度，在保证所述显示面板10的显示质量的前提下，通过降低第一薄膜晶体管单元1311的密度来提高所述摄像区101的透光率。
在所述薄膜晶体管层130上形成封装层150；在所述封装层150形成触控层160；在所述触控层160上形成光学膜片结构层170，在所述光学膜片结构层包括偏光片层1701，在所述偏光片层1701对应所述摄像区101开设一透光孔171。
如图7所示，本实施例中，本发明的显示装置1包括所述显示面板10，所述显示装置1可以为手机，电脑，电视等用于显示的设备。
以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种显示面板，其中，包括摄像区和围绕所述摄像区的非摄像区；
    所述显示面板包括：
    基板；
    柔性层，设于所述基板上，其中，所述柔性层对应所述摄像区为透明柔性层；
    薄膜晶体管层，设于所述柔性层上，所述薄膜晶体管层包括：设置在所述摄像区多个第一薄膜晶体管单元和设置在所述非摄像区的多个第二薄膜晶体管单元，所述第一薄膜晶体管单元的排布密度小于所述第二薄膜晶体管单元的排布密度。
  2. 根据权利要求1所述的显示面板，其中，
    所述柔性层的材料包括聚酰亚胺材料，其中，所述柔性层对应所述摄像区为透明聚酰亚胺材料。
  3. 根据权利要求1所述的显示面板，其中，所述第一薄膜晶体管单元的密度与所述第二薄膜晶体管单元的密度比在1:2至1:30之间。
  4. 根据权利要求1所述的显示面板，其中，还包括
    有机发光层，设于所述薄膜晶体管层上；
    封装层，设于所述有机发光层上；
    触控层，设于所述封装层上；
    光学膜片结构层，设于所述触控层上。
  5. 根据权利要求4所述的显示面板，其中，
    所述光学膜片结构层包括：
    偏光片层，设于所述触控层上，所述偏光片层对应所述摄像区设有一透光孔；
    光学胶，设于所述偏光片层远离所述触控层一侧；
    保护层，设于所述光学胶远离所述偏光片层一侧。
  6. 一种显示面板的制备方法，所述显示面板包括摄像区和围绕所述摄像区的非摄像区，其中，包括
    提供一基板；
    在所述基板上沉积一层柔性层，其中，对应所述摄像区采用透明柔性材料沉积；
    在所述柔性层上形成薄膜晶体管层；
    在所述摄像区内形成第一薄膜晶体管区，在所述第一薄膜晶体管区内形成若干均匀排布的第一薄膜晶体管单元；
    在所述非摄像区内形成第二薄膜晶体管区，在所述第二薄膜晶体管区内形成若干均匀排布的第二薄膜晶体管单元；其中，
    对应所述非摄像区的所述第二薄膜晶体管单元密度小于对应所述摄像区的所述第一薄膜晶体管单元密度。
  7. 根据权利要求6所述的显示面板的制备方法，其中，
    形成所述柔性层的材料为聚酰亚胺材料，其中，对应所述摄像区的所述柔性层采用透明聚酰亚胺材料。
  8. 根据权利要求6所述的显示面板的制备方法，其中，还包括
    在所述薄膜晶体管层上形成封装层；
    在所述封装层形成触控层；
    在所述触控层上形成光学膜片结构层。
  9. 根据权利要求8述的显示面板的制备方法，其中，所述光学膜片结构层包括偏光片层，在所述偏光片层对应所述摄像区开设一透光孔。
  10. 一种显示装置，其中，包括如权利要求1所述的显示面板。
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