WO2020133789A1 - 一种显示面板及其终端器件 - Google Patents

一种显示面板及其终端器件 Download PDF

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Publication number
WO2020133789A1
WO2020133789A1 PCT/CN2019/081745 CN2019081745W WO2020133789A1 WO 2020133789 A1 WO2020133789 A1 WO 2020133789A1 CN 2019081745 W CN2019081745 W CN 2019081745W WO 2020133789 A1 WO2020133789 A1 WO 2020133789A1
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Prior art keywords
layer
display panel
display area
pixel array
display
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PCT/CN2019/081745
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English (en)
French (fr)
Inventor
白思航
Original Assignee
武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/476,282 priority Critical patent/US20210335919A1/en
Publication of WO2020133789A1 publication Critical patent/WO2020133789A1/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M1/00—Substation equipment, e.g. for use by subscribers
    • H04M1/02—Constructional features of telephone sets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements

Definitions

  • the invention relates to the technical field of light-emitting display, in particular, a display panel and a terminal device applied thereto.
  • touch screen mobile phones have become an indispensable tool for people's daily life.
  • the screen of the mobile phone cannot be increased indefinitely.
  • it is sometimes limited to a certain size. Therefore, it is necessary to increase the display range within a limited size range. That is, the industry often said "narrow bezel" design in order to achieve a larger screen ratio of mobile phones.
  • the common practice in the industry is to reduce the border area of the display screen.
  • the most effective way to reduce the lower border is pad Bending technology, that is, a part of the fanout area of the display (Fanout) routing area and the driver IC and FPC are bent to the back of the screen for bonding, which can effectively reduce the length of the lower border area.
  • the front camera of the mobile phone is generally placed in the upper frame area of the display screen, in order to ensure the shooting requirements of the camera, the range of the upper frame cannot be further reduced, but the range of the lighting area of the camera can only be limited.
  • the industry uses "bangs" or “droplet” screens to reduce borders, thereby increasing the screen-to-body ratio.
  • the camera disposed under the display screen is in the non-display area of the display screen, which makes a non-display area always exist in the effective display range of the display screen.
  • the camera set under the screen needs to be integrated into the display area of the display screen, that is, the camera can take pictures normally when shooting, and the light transmittance is high, but the camera does not shoot At this time, the screen area on it can still display normal images.
  • FIG. 1 illustrates a structure of a display area of a common OLED display panel in the industry.
  • the display area (AA area) of the display panel is composed of a PI (polyimide) layer 101', a device array (array) layer 102', an organic light emitting (EL) layer 103', and a package (
  • the TFE layer 104', the touch (DOT) layer 105', and the module (MOD) device layer 106' are composed of the PI layer and the device array layer that have the most influence on the light transmittance among all the above structures.
  • the transmittance of the PI layer, the metal film layer in the device array layer, and the cathode film layer in the organic light-emitting layer can be simultaneously increased and the use of polarizers is eliminated, the overall transmittance of the display area can be effectively improved, At the same time streamlining the process, it is more conducive to mass production.
  • An aspect of the present invention is to provide a display panel that can perform a full-screen display as a whole without a significant non-display area and has a high transmittance.
  • a display panel defines a first display area and a second display area, and includes a substrate layer.
  • the substrate layer includes a first portion corresponding to the first display area and a second portion corresponding to the second display area, wherein the second portion of the substrate layer is achievable for the entire visible light band
  • the transmittance is 80% or more.
  • the second portion of the substrate layer can achieve a transmittance greater than or equal to the transmittance of the first portion of the substrate layer for the entire visible light band .
  • the second portion of the substrate layer has a transmittance of 50% or more to the blue-violet light band in visible light.
  • the first portion of the substrate layer has a transmittance of 30% for the blue-violet band in visible light.
  • the first portion of the substrate layer is composed of a first PI material
  • the second portion is composed of a second PI material, wherein the position where the first portion and the second portion meet At this point, the first material and the second material are overlapped.
  • the first PI material may be a light yellow PI material commonly used in the industry
  • the second PI material is an innovative technical solution disclosed by the present invention, which is preferred to the commonly used light yellow PI material. It is a transparent PI material.
  • the first PI material is different from the second PI material.
  • a device array layer is provided on the substrate layer, and a pixel array is provided in the device array layer, wherein the pixel array includes first pixels disposed in the first display area An array and a second pixel array disposed in the second display area, wherein the pixel array density of the first pixel array is greater than the pixel array density of the second pixel array under the same unit area.
  • the unit area may be in centimeter unit level, millimeter unit level or micrometer unit level, for example, the unit area may be 1 square millimeter, 1 square centimeter, etc.; specifics may be determined according to needs without limitation.
  • the pixel array density of the first pixel array is 1 to 100 times the pixel array density of the second pixel array.
  • the first pixel array is a 10 ⁇ 10 pixel array
  • the second pixel array is a 4 ⁇ 4 pixel array.
  • the size of each pixel is 63um*63um
  • the number of pixels set by the first pixel array in a unit square millimeter is 252
  • the second pixel array is in the same unit
  • the pixel array density set in a square millimeter may be 1/4, 1/9, 1/16, 1/25, 1/36, etc. of the array density of the first pixel array, which may be determined according to actual needs, There is no limit.
  • the area between adjacent pixels in the second pixel array is provided with a light-transmitting channel.
  • the purpose of reducing the density of the second pixel array is to increase the space between the pixels so that more light can enter the image sensing unit below the pixels from between the pixels. Therefore, in the second pixel array
  • the area between adjacent pixels should be able to transmit light as much as possible, and for this purpose, the light-transmitting channel can be provided in the area between adjacent two pixels.
  • materials used for the structure of each film layer in the light-transmitting channel it is also possible to use materials with high light transmittance. For example, it is not suitable to provide a pixel definition layer made of a material with a high optical density coefficient in this area.
  • the device array layer includes a pixel definition layer
  • the pixel definition layer in the second display area is composed of a first organic photoresist material
  • the optical density (OD) value of the material is greater than 0.2. Specifically, it can be 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1.0, 1.1, 1.2, 1.3, 1.5, 1.8, 2, 2.2, 2.5, 2.8, 3 and so on.
  • the pixel definition layer formed by the first organic photoresist material can cover the diffraction and reflection of the incident light by the metal wiring layer in the cell array layer where it is located.
  • the first organic photoresist material may be a black photoresist material.
  • the first organic photoresist material may be a black photoresist material with an optical density (OD) value greater than 0.2, for example, a black resin photoresist material, preferably black acrylic resin Ester resin photoresist materials, etc., but not limited to.
  • a black resin photoresist material preferably black acrylic resin Ester resin photoresist materials, etc.
  • the specific photoresist material can be used as long as it can play a shading effect, and the required optical density parameter meets the requirements.
  • the specific color, black, white, or other colors is not limited.
  • a black photoresist material is used for the pixel definition layer to reduce the reflection of ambient light on the metal layer and improve the contrast of the display panel, so that no additional polarizer is needed.
  • the organic photoresist material used in the pixel definition layer of the first display area may be the first organic photoresist material, or may be different from the first organic photoresist Material of the second organic photoresist material. It can be said that the second organic photoresist material may be an organic photoresist material commonly used in the industry to form a pixel definition layer, and the first organic photoresist material is an innovative technical solution disclosed by the present invention.
  • the pixel definition layers in the device array layer in the first display area and the second display area both use the first photoresist material.
  • the first display area wraps the second display area.
  • the second display area is located at an edge position of the display panel, which is surrounded by three sides of the first display area rather than completely surrounded by the first display area; or The second display area is located at a corner of the first display area, and the two sides are connected to each other; or the second display area and the first display area are arranged in parallel and connected to each other.
  • the first display area and the second display area are connected to constitute The overall display area of the display panel is described.
  • the display panel defines two or more numbers of the first display area
  • the first display area and the second display area are connected to constitute The overall display area of the display panel is described.
  • a terminal device which includes a body, wherein a photosensitive device is provided on the body.
  • the display panel according to the present invention is provided on the body, and the photosensitive device is correspondingly provided under the second display area of the display panel.
  • the terminal device may be any smart terminal device that requires a display panel and a photosensitive device (for example, a camera) to be provided under the display panel.
  • a photosensitive device for example, a camera
  • the present invention relates to a display panel which uses a transparent PI material according to the present invention in a specific area of its substrate layer, such as a camera area, so that the light transmittance of this area is greatly improved, so that it is arranged below
  • the camera can obtain enough light for normal shooting operations; at the same time, reduce the pixel array density in the device array layer in this area, so that the area still has a display function, so that the display panel involved in the present invention has The entire effective display area on the whole, without a non-display area compromised to maintain the normal shooting function of the camera below, to a certain extent, achieves the highly demanded "full screen” display effect on the market.
  • the display effect of this "full screen” will obviously increase the satisfaction of the customers who use the terminal devices. Therefore, it can be considered that the display panel involved in the present invention is a development trend of the panel industry.
  • the pixel definition layer in the unit array layer of the camera area uses the new functional material black organic photoresist according to the present invention to replace the traditional organic photoresist.
  • the black photoresist material has the ability to absorb light, which enables it to It plays a certain role in blocking, thereby effectively improving the diffraction and reflection of incident light rays by the metal traces in the device array layer at the camera position in this area, and at the same time improving the light leakage between different pixels in its light-emitting area .
  • the manufacturing process of the display panel no longer requires the subsequent manufacturing process of the polarizer. In this way, the manufacturing process of the display panel according to the present invention is simplified.
  • the display panel involved in the present invention also does not need to use laser cutting to realize the normal shooting operation of the off-screen camera through the special-shaped screen common in the prior art, thereby avoiding the particles (particles) in the laser process of the display screen ) Increases and cracking risks, while not increasing equipment costs, but also contributes to future mass production.
  • FIG. 1 is a schematic structural diagram of a display area of a common OLED display panel in the industry
  • FIG. 2 is a schematic diagram of a display panel according to an embodiment of the invention.
  • FIG. 3 is a partial structural diagram of the display panel shown in FIG. 2;
  • FIG. 4 is a partial cross-sectional structural diagram of the display panel shown in FIG. 2, which only illustrates a part of the structure in the device array layer.
  • an embodiment of the present invention provides a display panel, which defines a first display area 11 and a second display area 12.
  • the first display area 11 may be, for example, an AA display area in a so-called display panel
  • the second display area 12 may be a so-called display panel area of a corresponding under-screen camera.
  • the first display area completely wraps the four sides of the second display area.
  • the first display area may be wrapped on three sides of the second display area, or the two are arranged in parallel and connected in parallel, which may be determined according to actual needs and is not limited.
  • the number of the first display area 11 and the second display area 12 provided on the display panel may also be determined as needed, and is not limited.
  • the display panel includes a glass layer 100, a substrate layer 101, and other functional layers, as shown in FIG. 3, which only illustrates the glass layer 100 and the substrate layer 101 therein.
  • the substrate layer 101 includes a first portion 111 corresponding to the first display area 11 and a second portion 121 corresponding to the second display area 12.
  • the first part 111 is composed of a first PI material, which may be a light yellow PI material commonly used in the industry, and its transmittance to the blue-violet light segment of visible light is approximately 30%.
  • the second portion 121 is made of a second PI material, which is a transparent PI material, and its overall transmittance for visible light is 80% or more, of which the transmittance for the blue-violet light segment of visible light is 50 %or above.
  • the second portion 121 of the substrate layer 101 is made of a transparent PI material, which can effectively increase the penetration of incident light to a certain extent, so that the corresponding photosensitive device, such as a camera, or Other image sensors can obtain enough light to ensure that they can normally implement the shooting function.
  • the first portion 111 of the substrate layer 101 may also be composed of the second PI material, but it is not limited thereto.
  • the other functional layers provided under the substrate layer 101 include a device array layer 102, an organic light emitting (EL) layer 103, an encapsulation (TFE) layer 104, and a touch (DOT) layer 105 And the module (MOD) device layer 106.
  • EL organic light emitting
  • TFE encapsulation
  • DOT touch
  • MOD module
  • a pixel array is provided in the device array layer 102, wherein the pixel array includes a first pixel array corresponding to the first display area 11 and a second pixel array corresponding to the second display area,
  • the pixel array density of the first pixel array is greater than the pixel array density of the second pixel array under the same unit area.
  • the unit area may be in units of centimeters or units of millimeters, and the specific area may be determined according to needs without limitation.
  • the pixel array density of the first pixel array is 1-10 times the pixel array density of the second pixel array.
  • the first pixel array is a 10 ⁇ 10 pixel array
  • the second pixel array is a 4 ⁇ 4 pixel array.
  • each pixel size is 63um*63um
  • the number of pixels set by the first pixel array in unit square millimeter is 252
  • the pixels set by the second pixel array in the same unit square millimeter The array density may be 1/4, 1/9, 1/16, 1/25, 1/36, etc. of the array density of the first pixel array, which may be determined according to actual needs without limitation.
  • the invention reduces the density of the pixel array whose position corresponds to the second display area 12 and adopts a sparse array arrangement. In this way, while maintaining the display function of the second display area 12, it can also play a role without affecting the transparency. The effect of light, in turn, will not affect the normal function implementation of the photosensitive device disposed below it due to retaining the display function.
  • the area between adjacent pixels in the second display area 12 is provided with a light-transmitting channel.
  • the purpose of reducing the density of the pixel array in the second display area 12 is to increase the space between the pixels, so that more light can enter the image sensing unit below from the area between the pixels, Therefore, the area between adjacent pixels in the second display area 12 should be able to transmit light as much as possible, and then the area between two pixels can be defined as the light-transmitting channel.
  • materials used for the structure of each film layer in the light-transmitting channel it is also possible to use materials with high light transmittance. For example, for example, a pixel definition layer made of a material with a high optical density coefficient is not suitable in this area.
  • the cell array layer 102 includes a pixel definition layer 1022, wherein the photoresist material used in the pixel definition layer 1022 can cover the diffraction of incident light by the metal trace layer in the cell array layer 102 where it is located and Reflective.
  • This change in photoresist material in terms of technical effect, taking the second display area as an example, it can effectively improve the diffraction and reflection of the metal film layer in the device array layer 102 at its position At the same time, it can also improve the light leakage phenomenon between different pixels in the light-emitting area. More importantly, if the pixel definition layer of the entire display area of the display panel adopts the photoresist material involved in the present invention, it can remove the subsequent POL process, simplifying the display to a certain extent Panel process technology.
  • a terminal device which includes a body, wherein the body is provided with a photosensitive device, for example, a camera.
  • the display panel according to the present invention is further provided on the body, wherein the photosensitive device is correspondingly provided under the second display area of the display panel.
  • the terminal device may be any intelligent terminal device that needs to be provided with a display panel and a photosensitive device under the display panel. For example, mobile phones, tablets, computers, etc.
  • the present invention relates to a display panel which uses a transparent PI material according to the present invention in a specific area of its substrate layer, for example, a camera area, so that the light transmittance of this area is greatly improved, so that it is arranged below
  • the camera can obtain enough light for normal shooting operations; at the same time, reduce the pixel array density in the device array layer in this area, so that the area still has a display function, so that the display panel involved in the present invention has The overall effective display area, there is no non-display area compromised to maintain the normal shooting function of the camera below, thus to a certain extent, the market's highly demanded "full screen” display effect is achieved.
  • the display effect of this "full screen” will obviously increase the satisfaction of the customers who use the terminal devices. Therefore, it can be considered that the display panel involved in the present invention is a development trend of the panel industry.
  • the pixel definition layer in the unit array layer of the camera area uses the new functional material black organic photoresist according to the present invention to replace the traditional organic photoresist.
  • the black photoresist material has the ability to absorb light, which enables it to It plays a certain role in blocking, thereby effectively improving the diffraction and reflection of incident light rays by the metal traces in the device array layer at the camera position in this area, and at the same time improving the light leakage between different pixels in its light-emitting area .
  • the manufacturing process of the display panel according to the present invention is simplified.
  • the display panel of the present invention does not need to use laser cutting to realize the normal shooting operation of the off-screen camera through the special-shaped screen common in the prior art, thus avoiding the increase of particles in the display screen during the laser and The risk of breakage, while not increasing equipment costs, is more conducive to future mass production.

Abstract

本发明提供了一种显示面板，其定义有第一显示区域和第二显示区域，其包括衬底层。其中所述衬底层包括位置对应于所述第一显示区域的第一部和位置对应于所述第二显示区域的第二部，其中所述衬底层的第二部对于整体可见光波段能够达到的透过率为80%或以上。本发明提供了一种显示面板，其能够进行整体性全屏显示，不会存在明显的非显示区域，且透过率高。

Description

一种显示面板及其终端器件 技术领域
本发明涉及发光显示技术领域，尤其是，其中的一种显示面板及其应用的终端器件。
 背景技术
已知，随着技术的不断进步，触屏手机已成为人们日常生活必不可少的一个工具。但考虑到操作的便利性，使得手机的屏幕不能无限增大，相反，有时还需限制在一定尺寸内，因此，这就需要在有限的尺寸范围内，进可能的增加其显示范围。即，业界常说的“窄边框”设计，以便实现手机更大的屏占比。
其中，业界常见的做法为将显示屏的边框（border）区减小，其中针对减小下边框，最有效的办法是pad bending技术，即将显示屏的一部分扇形区（Fanout）走线区及驱动IC及FPC一起弯折到屏幕的背面进行绑定（bonding），如此可有效减小下边框区域的长度。
但由于显示屏的上边框区域处一般会放置手机的前置摄像头，如此，为保证摄像头的拍摄需求，无法继续减小上边框的范围，而只能限制摄像头的采光区域范围。对此，业界采用“刘海”或“水滴”屏来实现border的缩减化，从而增加屏占比。
但是，无论哪种设计，所述显示屏下设置的摄像头都是在所述显示屏的非显示区域内，这就使得所述显示屏的有效显示范围内，始终存在一处非显示区域。为了实现真正的全面屏，提高客户的视觉感受，需要将屏下设置的摄像头结合在显示屏的显示区域中，即摄像时可以正常拍照，且透光率较高，而在所述摄像头不摄像时，其上的显示屏区域仍可以进行正常的图像显示。
请参阅图1所示，其图示了一种业界常见的OLED显示面板的显示区域的结构。如图中所示，所述显示面板的显示区(AA区)是由PI（聚酰亚胺）层101’、器件阵列（array）层102’、有机发光（EL）层103’、封装（TFE）层104’、触控（DOT）层105’以及模组（MOD）器件层106’构成，以上所有结构中对光的透过率影响最大的膜层为所述PI层、器件阵列层中的金属膜层、有机发光层构成中的阴极（cathode）膜层以及MOD器件中的各段偏光片（POL）。
因此，若能同时提高PI层、器件阵列层中的金属膜层以及有机发光层中的阴极膜层的穿透率并且取消偏光片的使用，则可以有效提高其显示区域的整体透过率，同时精简制程，更有助于量产化。
 技术问题
本发明的一个方面是提供一种显示面板，其能够进行整体上的全屏显示，而不会存在明显的非显示区域，且透过率高。
 技术解决方案
本发明采用的技术方案如下：
一种显示面板，定义有第一显示区域和第二显示区域，包括衬底层。其中所述衬底层包括位置对应于所述第一显示区域的第一部和位置对应于所述第二显示区域的第二部，其中所述衬底层的第二部对于整体可见光波段能够达到的透过率为80%或以上。
进一步的，在不同实施方式中，其中所述衬底层的第二部对于整体可见光波段能够达到的透过率大于或是等于所述衬底层的第一部对于整体可见光波段能够达到的透过率。
进一步的，在不同实施方式中，其中所述衬底层的第二部对于可见光中的蓝紫光波段的透过率为50%或以上。
进一步的，在不同实施方式中，其中所述衬底层的第一部对于可见光中的蓝紫光波段的透过率为30%。
进一步的，在不同实施方式中，其中所述衬底层第一部采用第一PI材料构成，所述第二部采用第二PI材料构成，其中所述第一部和第二部相接的位置处，所述第一材料和所述第二材料重叠设置。
具体的，所述第一PI材料可以是业界常用的淡黄色PI材料，而所述第二PI材料则为本发明揭示的创新技术方案，其相对于所述常用的淡黄色PI材料，其优选为一种透明状PI材料。
进一步的，在不同实施方式中，其中所述第一PI材料不同于所述第二PI材料。
进一步的，在不同实施方式中，其中所述衬底层上设置有器件阵列层，所述器件阵列层中设置有像素阵列，其中所述像素阵列包括设置在所述第一显示区域的第一像素阵列和设置在所述第二显示区域的第二像素阵列，其中在相同单位面积下所述第一像素阵列的像素阵列密度大于所述第二像素阵列的像素阵列密度。其中所述单位面积可以是厘米单位级、毫米单位级或是微米单位级，例如，单位面积可以是1平方毫米、1平方厘米等等；具体可随需要而定，并无限定。
进一步的，在不同实施方式中，其中所述第一像素阵列的像素阵列密度是第二像素阵列的像素阵列密度的1~100倍。
例如，在一个实施方式中，其中在同样单位面积下所述第一像素阵列为10X10的像素阵列，而所述第二像素阵列为4X4的像素阵列。
进一步的，在又一个实施方式中，设每个像素尺寸为63um*63um，所述第一像素阵列在单位平方毫米内设置的像素数量为252个，而所述第二像素阵列在同样的单位平方毫米内设置的像素阵列密度可以为所述第一像素阵列的阵列密度的1/4、1/9、1/16、1/25、1/36等等，具体可随实际需要而定，并无限定。
进一步的，在不同实施方式中，其中所述第二像素阵列中的相邻像素之间的区域设置有透光通道。其中降低所述第二像素阵列密度的目的，即为增加像素之间的空间，以便更多的光能从像素之间入射到像素下方的影像传感单元，因此，所述第二像素阵列内相邻像素之间的区域要能尽量透光，而为了实现这一目的，则可在相邻两像素之间的区域设置出所述透光通道。进一步的，对于所述透光通道内的各膜层结构所采用的材料而言，其也尽量选用透光率高的材料构成。例如，该区域内不适合设置由具有高光密度系数材料构成的像素定义层。
进一步的，在不同实施方式中，其中所述器件阵列层中包括像素定义层，其中在所述第二显示区域中像素定义层采用第一有机光阻材料构成，其中所述第一有机光阻材料的光密度（OD）值大于0.2。具体可以是0.2、0.3、0.4、0.5、0.6、0.7、0.8、0.9、1.0、1.1、1.2、1.3、1.5、1.8、2、2.2、2.5、2.8、3等等。其中所述第一有机光阻材料构成的像素定义层能够遮住其所在单元阵列层中的金属走线层对入射光的衍射以及反光现象。
进一步的，在不同实施方式中，其中所述第一有机光阻材料可以是黑色光阻材料。
具体的，在又一实施方式中，其中所述第一有机光阻材料可以是光密度（OD）值大于0.2的黑色光阻材料，例如，黑色系树脂光阻材料，优选其中的黑色系丙烯酸酯树脂光阻材料等等，但不限于。其中具体选用的光阻材料只要能起到遮光效用，以及需要的光密度参数符合要求即可，而其具体的颜色，黑色，还是白色，还是其他颜色，并无限定。较优的，像素定义层采用黑色光阻材料可以减少环境光在金属层上的反射，提高显示面板的对比度，从而可以无需额外使用偏光片。
进一步的，在不同实施方式中，其中在所述第一显示区域的像素定义层采用的有机光阻材料可以是所述第一有机光阻材料，也可以是不同于所述第一有机光阻材料的第二有机光阻材料。可以说，所述第二有机光阻材料可以是业界常用的用于构成像素定义层的有机光阻材料，而所述第一有机光阻材料为本发明揭示的创新技术方案。
进一步的，在不同实施方式中，其中所述第一显示区域和第二显示区域内器件阵列层中的像素定义层均采用所述第一光阻材料。
进一步的，在不同实施方式中，其中所述第一显示区域将所述第二显示区域包裹于内。或者在其他实施方式中，所述第二显示区域位于所述显示面板的边缘位置处，其被所述第一显示区域三面包围而非被所述第一显示区域所四面完全包裹；或是所述第二显示区域位于所述第一显示区域的边角位置处，两者之间两面相接；或是所述第二显示区域与所述第一显示区域两者平行相接设置。
进一步的，在不同实施方式中，其中所述显示面板上定义有2个或以上数量的所述第二显示区域，所述第一显示区域与所述第二显示区域之间相接设置构成所述显示面板的整体显示区域。
进一步的，在不同实施方式中，其中所述显示面板上定义有2个或以上数量的所述第一显示区域，所述第一显示区域与所述第二显示区域之间相接设置构成所述显示面板的整体显示区域。
进一步的，本发明的又一实施方式提供了一种终端器件，其包括本体，其中所述本体上设置有感光器件。其中所述本体上设置有本发明涉及的所述显示面板，所述感光器件对应设置在所述显示面板的第二显示区域下。
进一步的，在不同实施方式中，其中所述终端器件可以是任何需要设置显示面板以及在所述显示面板下需设置感光器件（例如，摄像头）的智能终端器件。例如，手机、平板、电脑等等。
 有益效果
本发明涉及的一种显示面板，其在其衬底层的特定区域，例如摄像头区域，采用本发明涉及的透明PI材料构成，使得该区域的透光性获得了极大改善，从而使得其下方设置的摄像头能够获得足够的光线进行正常的拍摄操作；同时降低该区域内的器件阵列层中的像素阵列密度，使得该区域仍具有显示功能，如此，则使得本发明涉及的所述显示面板，具有整体上的全部有效显示区域，而不存在为保持下方摄像头正常的拍摄功能而妥协设置的一处非显示区域，从而在一定程度上实现了市场上高度需求的“全面屏”的显示效果。这一“全面屏”的显示效果，明显会提升其所在终端器件使用顾客的满意度，因此，可以认为本发明涉及的所述显示面板是面板行业的发展趋势。
进一步的，在摄像头区域的所述单元阵列层中的像素定义层采用本发明涉及的新型功能材料黑色有机光阻取代传统有机光阻，由于黑色光阻材料其对于光线的吸收性能，使得其能够起到一定的遮挡作用，从而有效改善该区域摄像头位置处所述器件阵列层中的金属走线对入射光线的衍射以及反光的现象，同时还能改善其发光区域中不同像素之间的漏光现象。
更为重要的是，由于引入的所述黑色光阻材料的遮光效能，若是所述显示面板的整体显示区域的像素定义层均采用本发明涉及的所述光阻材料，使得本发明涉及的所述显示面板的制程不再需要后续的偏光片这道制程。如此，精简了本发明涉及的显示面板的制程工艺。
另外，本发明涉及的所述显示面板，也不在需要采用镭射切割的方式通过现有技术中常见的异形屏来实现屏下摄像头的正常拍摄操作，从而避免了显示屏在镭射过程中微粒（particle）增加以及断裂（crack）风险，同时不会增加设备成本，更有助于将来的量产化。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为一种业界常见的OLED显示面板的显示区域的结构示意图；
图2为本发明的一个实施方式涉及的一种显示面板的示意图；
图3为图2所示的显示面板的部分结构示意图；
图4为图2所示的显示面板的局部剖视结构示意图，其仅图示了器件阵列层中的部分结构。
 本发明的实施方式
以下将结合附图和实施例，对本发明涉及的一种显示面板及其终端器件的技术方案作进一步的详细描述。
请参阅图2所示，本发明的一个实施方式提供了一种显示面板，其定义有第一显示区域11和第二显示区域12。其中所述第一显示区域11例如可以是一般所说的显示面板中的AA显示区域，而所述第二显示区域12可以是一般所说的对应屏下摄像头的显示面板区域。
如图中所示，其中所述第一显示区域是将所述第二显示区域4面完全包裹。而在其他实施方式中，所述第一显示区域也可以是将所述第二显示区域3面包裹，或是两者之间平行相接设置，具体可随实际需要而定，并无限定。另外，在其他实施方式中，所述显示面板上设置的第一显示区域11和第二显示区域12的数量，也可随需要而定，并无限定。
进一步的，所述显示面板包括玻璃层100、衬底层101和其他功能层，如图3所示，其仅图示了其中的玻璃层100和衬底层101。其中所述衬底层101包括位置对应于所述第一显示区域11的第一部111和位置对应于所述第二显示区域12的第二部121。
其中所述第一部111采用第一PI材料构成，其可以是业界常用的淡黄色PI材料，其中其对于可见光的蓝紫光段的透过率大致为30%。而所述第二部121采用第二PI材料构成，其为一种透明的PI材料，其对于可见光的整体透过率为80%或以上，其中对于可见光的蓝紫光段的透过率为50%或以上。
其中所述衬底层101的第二部121采用透明的PI材料构成，可以在一定程度上有效提高其对于入射光的穿透率，从而使得对应设置在其下方感光器件，例如，摄像头，或是其他影像传感器，可以获得足够的光线，以保证其能正常的实施拍摄功能。
而在其他实施方式中，其中所述衬底层101的第一部111也可以是采用所述第二PI材料构成，但不限于。
进一步的，请参阅图4所示，其中所述衬底层101下设置的其他功能层包括器件阵列层102、有机发光（EL）层103、封装（TFE）层104、触控（DOT）层105以及模组（MOD）器件层106。
其中所述器件阵列层102中设置有像素阵列，其中所述像素阵列包括对应设置在所述第一显示区域11的第一像素阵列和对应设置在所述第二显示区域的第二像素阵列，其中在相同单位面积下所述第一像素阵列的像素阵列密度大于所述第二像素阵列的像素阵列密度。其中所述单位面积可以是厘米单位级，也可以是毫米单位级，具体可随需要而定，并无限定。
其中所述第一像素阵列的像素阵列密度是第二像素阵列的像素阵列密度的1~10倍。例如，在一个实施方式中，其中在同样单位面积下所述第一像素阵列为10X10的像素阵列，而所述第二像素阵列为4X4的像素阵列。
具体来讲，设每个像素尺寸为63um*63um，所述第一像素阵列在单位平方毫米内设置的像素数量为252个，而所述第二像素阵列在同样的单位平方毫米内设置的像素阵列密度可以为所述第一像素阵列的阵列密度的1/4、1/9、1/16、1/25、1/36等等，具体可随实际需要而定，并无限定。
本发明将位置对应于所述第二显示区域12的像素阵列密度降低，采用稀疏的阵列排布，如此，可在保留所述第二显示区域12显示功能的同时，还能起到不影响透光的作用，进而不会因保留显示功能而影响其下方设置的感光器件的正常功能实施。
进一步的，其中所述第二显示区域12中的相邻像素之间的区域设置有透光通道。其中降低所述第二显示区域12内的像素阵列密度的目的，即为增加像素之间的空间，以便使得更多的光能从像素之间的区域入射到其下方的影像传感单元中，因此，所述第二显示区域12内相邻像素之间的区域要能尽量透光，进而可将两像素之间的区域定义为所述透光通道。进一步的，对于所述透光通道内的各膜层结构所采用的材料而言，其也尽量选用透光率高的材料构成。例如，例如，该区域内不适合设置由具有高光密度系数材料构成的像素定义层。
进一步的，其中所述单元阵列层102中包括像素定义层1022，其中所述像素定义层1022采用的光阻材料能够遮住其所在单元阵列层102中的金属走线层对入射光的衍射以及反光。例如，所述像素定义层1022采用的是一种黑色光阻材料，其光密度OD（Optical Density；OD=-lgT，其中T为穿透率；）值大于0.2，优选值在0.3或以上。
这一光阻材料的变更，从技术效果方面来讲，以所述第二显示区域为例而言，其可以有效改善其位置处的所述器件阵列层102中的金属膜层衍射以及反光的现象，同时还可以改善发光区域不同像素之间的漏光现象。更为重要的是，若是所述显示面板的整体显示区域的像素定义层均采用本发明涉及的所述光阻材料，其可以去除后续的POL 这道制程，在一定程度上简化了所述显示面板的制程工艺。
进一步的，本发明的又一实施方式提供了一种终端器件，其包括本体，其中所述本体上设置有感光器件，例如，摄像头。所述本体上还设置有本发明涉及的所述显示面板，其中所述感光器件对应设置在所述显示面板的第二显示区域下。
其中所述终端器件可以是任何需要设置显示面板以及在所述显示面板下设置感光器件的智能终端器件。例如，手机、平板、电脑等等。
本发明涉及的一种显示面板，其在其衬底层特定区域，例如，摄像头区域，采用本发明涉及的透明PI材料构成，使得该区域的透光性获得了极大改善，从而使得其下方设置的摄像头能够获得足够的光线进行正常的拍摄操作；同时降低该区域内的器件阵列层中的像素阵列密度，使得该区域仍具有显示功能，如此，则使得本发明涉及的所述显示面板，具有整体上的有效显示区域，而不存在为保持下方摄像头正常的拍摄功能而妥协设置的一处非显示区域，从而在一定程度上实现了市场上高度需求的“全面屏”的显示效果。这一“全面屏”的显示效果，明显会提升其所在终端器件使用顾客的满意度，因此，可以认为本发明涉及的所述显示面板是面板行业的发展趋势。
进一步的，在摄像头区域的所述单元阵列层中的像素定义层采用本发明涉及的新型功能材料黑色有机光阻取代传统有机光阻，由于黑色光阻材料其对于光线的吸收性能，使得其能够起到一定的遮挡作用，从而有效改善该区域摄像头位置处所述器件阵列层中的金属走线对入射光线的衍射以及反光的现象，同时还能改善其发光区域中不同像素之间的漏光现象。
更为重要的是，由于引入的所述黑色光阻材料的遮光效能，若是所述显示面板的整体显示区域的像素定义层均采用本发明涉及的所述光阻材料，使得本发明涉及的所述显示面板的制程不再需要后续的POL这道制程。如此，精简了本发明涉及的显示面板的制程工艺。
另外，本发明涉及的所述显示面板，也不在需要采用镭射切割的方式通过现有技术中常见的异形屏来实现屏下摄像头的正常拍摄操作，从而避免了显示屏在镭射过程中微粒增加以及断裂风险，同时又不会增加设备成本，更有助于将来的量产化。
本发明的技术范围不仅仅局限于上述说明中的内容，本领域技术人员可以在不脱离本发明技术思想的前提下，对上述实施例进行多种变形和修改，而这些变形和修改均应当属于本发明的范围内。

Claims (10)

  1. 一种显示面板，定义有第一显示区域和第二显示区域，包括衬底层，
    其中所述衬底层包括位置对应于所述第一显示区域的第一部和位置对应于所述第二显示区域的第二部；
    其中所述衬底层的第二部对于整体可见光波段能够达到的透过率为80%或以上。
  2. 根据权利要求1所述的显示面板，其中所述衬底层的第二部对于整体可见光波段能够达到的透过率大于或是等于所述衬底层的第一部对于整体可见光波段能够达到的透过率。
  3. 根据权利要求1所述的显示面板，其中所述衬底层第一部采用第一PI材料构成，所述第二部采用第二PI材料构成，其中所述第一部和第二部相接的位置处，所述第一材料和所述第二材料重叠设置。
  4. 根据权利要求1所述的显示面板，其中所述第二部对于可见光中的蓝紫光波段的透过率为50%或以上。
  5. 根据权利要求1所述的显示面板，其中所述衬底层上设置有器件阵列层，所述器件阵列层中设置有像素阵列，其中所述像素阵列包括设置在所述第一显示区域的第一像素阵列和设置在所述第二显示区域的第二像素阵列，其中在相同单位面积下所述第一像素阵列的像素阵列密度大于所述第二像素阵列的像素阵列密度。
  6. 根据权利要求5所述的显示面板，其中所述第二像素阵列中的相邻像素之间的区域设置有透光通道。
  7. 根据权利要求5所述的显示面板，其中所述第一像素阵列的像素阵列密度是所述第二像素阵列的像素阵列密度的1~100倍。
  8. 根据权利要求1所述的显示面板，其中所述衬底层上设置有器件阵列层，所述器件阵列层中包括像素定义层；其中在所述第二显示区域中的像素定义层采用第一有机光阻材料构成，其中所述第一有机光阻材料的光密度（OD）值大于0.2。
  9. 根据权利要求1所述的显示面板，其中所述衬底层上设置有器件阵列层，所述器件阵列层中包括像素定义层；其中在所述第二显示区域中的像素定义层采用黑色有机光阻材料构成。
  10. 一种终端器件，其包括本体，其中所述本体上设置有感光器件，其中所述本体上设置有根据权利要求1所述的显示面板，所述感光器件对应设置在所述显示面板的第二显示区域下。
PCT/CN2019/081745 2018-12-29 2019-04-08 一种显示面板及其终端器件 WO2020133789A1 (zh)

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