WO2020262345A1 - Procédé de production d'une carte de câblage et procédé de production d'un composant électronique - Google Patents

Procédé de production d'une carte de câblage et procédé de production d'un composant électronique Download PDF

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Publication number
WO2020262345A1
WO2020262345A1 PCT/JP2020/024517 JP2020024517W WO2020262345A1 WO 2020262345 A1 WO2020262345 A1 WO 2020262345A1 JP 2020024517 W JP2020024517 W JP 2020024517W WO 2020262345 A1 WO2020262345 A1 WO 2020262345A1
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WO
WIPO (PCT)
Prior art keywords
wiring board
substrate
manufacturing
conductive paste
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Prior art date
Application number
PCT/JP2020/024517
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English (en)
Japanese (ja)
Inventor
小池　淳一
Original Assignee
株式会社マテリアル・コンセプト
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Publication of WO2020262345A1 publication Critical patent/WO2020262345A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns

Definitions

  • the present invention relates to a method for manufacturing a wiring board and a method for manufacturing an electronic component.
  • the conductive paste is connected to electronic components such as chip resistors, chip capacitors and solar cells, printed wiring boards, wiring of electronically mounted products such as boards with through holes, and transistors for controlling pixel switching of displays. It is used for electrodes and wiring.
  • Patent Document 1 describes heating at a high temperature of 600 to 900 ° C. in which the resin decomposes and disappears in the atmosphere. A method of sintering the copper oxide powder formed at that time at a high temperature of 600 to 1000 ° C. while reducing it to copper is disclosed. Further, in Patent Document 2, after performing a debindering step in a non-oxidizing atmosphere at a high temperature of 800 to 900 ° C., copper is oxidized while lowering the temperature to at least 500 ° C. in an oxidizing atmosphere, and further at 900 to 1000 ° C. It discloses a method for producing a sintered body by reducing it at a high temperature.
  • the present invention has been made in view of the above circumstances, and is a method for manufacturing a wiring board capable of forming metal wiring having excellent conductivity on a substrate having no high heat resistance such as a polymer insulating film.
  • the purpose is to provide.
  • an arrangement step of arranging a conductive paste containing at least copper particles and having a particle size distribution having an average particle size of the copper particles of 80 nm or more and 15 ⁇ m or less on a substrate and an oxygen concentration of 0.5% by volume or more A first heating step of heating the substrate at 200 ° C. or higher and lower than 400 ° C. in an atmosphere of 30% by volume or less, and a second heating step of heating the substrate at 200 ° C. or higher and lower than 400 ° C. in an atmosphere containing a reducing gas.
  • the manufacturing method including the steps it has been found that a metal wiring having excellent conductivity can be formed on a substrate which does not have high heat resistance, and the present invention has been completed.
  • the present invention provides the following.
  • a method for producing a wiring board which comprises, and has a particle size distribution in which the average particle size of the metal particles contained in the conductive paste is 80 nm or more and 15 ⁇ m or less.
  • a low temperature pressurizing step of applying a pressure of 1 MPa or more and 10 MPa or less to the copper-containing sintered body formed from the conductive paste at a temperature lower than 100 ° C. is further included.
  • a high temperature pressurizing step of applying a pressure of 1 MPa or more and 10 MPa or less at 100 ° C. or higher and lower than 400 ° C. to the sintered body formed from the conductive paste is further included.
  • a method for manufacturing an electronic component which comprises a step of manufacturing an electronic component using the wiring board manufactured by the method for manufacturing a wiring board according to any one of (1) to (9) above.
  • a method for manufacturing a wiring board which can form a metal wiring having excellent conductivity on a substrate which does not have high heat resistance, such as a polymer insulating film.
  • the method for manufacturing a wiring board according to the present embodiment is a method for manufacturing a wiring board in which wiring made of a sintered body of one or more metals selected from copper, silver and nickel is provided on the substrate. ..
  • the method for manufacturing this wiring board includes an arrangement step of arranging a conductive paste containing metal particles containing one or more metal elements selected from copper, silver and nickel on the substrate, and an oxygen concentration.
  • the first heating step of heating the substrate at 200 ° C. or higher and lower than 400 ° C. in an atmosphere of 0.5% by volume or more and 30% by volume or less, and the substrate at 200 ° C. or higher and lower than 400 ° C. in an atmosphere containing a reducing gas.
  • the method for manufacturing a wiring substrate according to the present embodiment is characterized in that the conductive paste used in the arranging step has a particle size distribution in which the average particle size of the metal particles contained therein is 80 nm or more and 1 ⁇ m or less. Is to be. Hereinafter, each step will be described in detail.
  • the arranging step is a step of arranging a conductive paste containing at least copper particles on the substrate.
  • the conductive paste of the present invention contains one or more metal particles selected from copper, silver and nickel, and also contains, for example, a binder resin and a solvent as vehicles.
  • the metal particles contain one or more metal elements selected from copper, silver and nickel. Specifically, the metal particles contain 90 at% or more of one or more metal elements selected from copper, silver and nickel with respect to all the elements contained in the metal particles.
  • the metal particles may contain other metal elements and non-metal elements up to about 10 at%, and may be partially oxidized or nitrided, for example.
  • the average diameter of the metal particles contained in the conductive paste has a particle size distribution of 80 nm or more and 15 ⁇ m or less.
  • the metal particles are heated in the first heating step described later and fused to each other in the metal oxide structure obtained. Sufficient voids are formed in the metal, and the oxidation reaction in the first heating step and the reduction reaction in the second heating step of the metal can be efficiently promoted.
  • the average particle size of the metal particles is 80 nm or more, the fluidity of the conductive paste containing the metal particles can be enhanced, and a conductive paste having high handleability such as coatability can be obtained.
  • the metal oxidation obtained by sintering the metal particles at a relatively low temperature of 200 ° C. or higher and lower than 400 ° C. in the first heating step is uniformly oxidized to the inside, and the strength of the finally obtained sintered body is increased.
  • the average particle size refers to the average value of the diameters of all the particles measured by measuring the distribution of the particle diameter using a laser diffraction type particle size distribution measuring device.
  • the average particle size of the metal particles is not particularly limited as long as it is 80 nm or more and 15 ⁇ m or less, but for example, it is preferably more than 100 nm, more preferably more than 200 nm, still more preferably 500 nm or more, and 1 ⁇ m or more. Is particularly preferable, and 2 ⁇ m or more is most preferable.
  • the average particle size is preferably 14 ⁇ m or less, more preferably 12 ⁇ m or less, and even more preferably 10 ⁇ m or less.
  • the method for producing such metal particles is not particularly limited, but particles produced by, for example, a gas atomizing method, a water atomizing method, or a liquid phase reduction precipitation method are preferable.
  • the content of the binder resin in the organic vehicle in the conductive paste is not particularly limited, but is preferably 0.05% by mass or more and 17% by mass or less, for example.
  • the content of the binder resin in the organic vehicle is 0.05% by mass or more, the viscosity of the conductive paste can be kept low.
  • the content of the binder resin in the organic vehicle is 17% by mass or less, the residual resin in the first sintering step can be suppressed.
  • the binder resin is not particularly limited as long as it is a resin that is decomposed in the first sintering step, and is, for example, a cellulose resin such as methyl cellulose, ethyl cellulose, or carboxymethyl cellulose, an acrylic resin, a butyral resin, an alkyd resin, an epoxy resin, or a phenol resin. And so on. Among them, it is preferable to use a cellulosic resin which tends to react with oxygen and carbon monoxide and easily disappear from the paste, and among the cellulosic resins, it is more preferable to use ethyl cellulose.
  • the solvent contained in the conductive paste is not particularly limited as long as it imparts an appropriate boiling point and vapor pressure to be removed in the first heating step and an appropriate viscosity to the paste, but is, for example, a hydrocarbon type.
  • An "organic vehicle” is, as is generally known, a liquid in which a binder resin, a solvent, and other organic substances added as needed are all mixed. When firing in the atmosphere of the present embodiment, it is sufficient to use an organic vehicle prepared by mixing a binder resin and a solvent, but if necessary, a metal salt and a polyol can be mixed and used. ..
  • the metal salt is not particularly limited, but when copper is used as the metal element contained in the metal particles, copper acetate (II), copper benzoate (II), bis (acetylacetonate) copper ( II) and the like.
  • copper copper acetate
  • copper benzoate copper benzoate
  • silver silver acetate (I), silver benzoate (I) and the like can be mentioned.
  • nickel nickel acetate (II), nickel dibenzoate (II), bis (acetylacetonate) nickel (II) and the like can be mentioned.
  • the polyol is not particularly limited, and for example, ethylene glycol, diethylene glycol, trimethylene glycol, propylene glycol, tetraethylene glycol and the like can be used. By adding these, the polyol reduces the metal salt during firing, and the reduced metal is deposited in the voids between the particles, so that it acts to enhance the electrical conductivity between the particles.
  • the content of the organic vehicle in the conductive paste is not particularly limited, but is preferably 3% by mass or more and 19% by mass or less, and more preferably 8% by mass or more and 15% by mass or less.
  • the content of the organic vehicle contained in the conductive paste is 3% by mass or more, the viscosity of the conductive paste can be kept low, and wiring having a uniform shape can be printed.
  • the content of the organic vehicle is 19% by mass or less, the viscosity of the conductive paste becomes too low, and it is possible to prevent the printed wiring shape from sagging.
  • the conductive paste can be kneaded by mixing the above-mentioned binder resin and solvent, further adding metal particles, and using a mixing device such as a planetary mixer or a stirring device. Further, 10% by mass or less of glass frit can be added to the metal particles. Further, if necessary, the mixture can be subjected to a dispersion treatment using a three-roll mill to enhance the dispersibility of the particles.
  • the method of arranging the conductive paste on the substrate is not particularly limited, but a screen printing method, a dispensing method, an inkjet method, an offset printing method, or the like can be used.
  • the substrate is not particularly limited as long as it is composed of a material having heat resistance at at least 200 ° C., and any substrate generally used as an electronic material can be used regardless of an organic material or an inorganic material. ..
  • a flexible resin material such as polyimide, liquid crystal polymer, fluororesin, polyethylene terephthalate, or polyethylene naphthalate can be used.
  • the inorganic material inorganic oxides, inorganic nitrides, inorganic oxynitrides and the like can be widely used, for example, SiO 2 , SiOCH, SiN x , Si 3 N 4 , SiON, AlN, Al 2 O 3 and silicon. Examples include resins containing.
  • the breaking strain (as a wiring board) after the second heating step described below is 90% or more of the breaking strain before the above-mentioned arrangement step.
  • the surface on which the conductive paste is arranged may be at least one surface of the substrate, and may be both sides.
  • the substrate on which the conductive paste is placed is appropriately dried and subjected to the first heating step described later.
  • a drying method for example, it can be allowed to stand at room temperature and normal pressure, or it may be allowed to stand at high temperature or reduced pressure to accelerate the drying.
  • the average thickness of the conductive paste after drying is not particularly limited, but is preferably, for example, 30 ⁇ m or less, preferably 25 ⁇ m or less, and preferably 20 ⁇ m or less.
  • the average thickness of the paste is an average value of 10 points obtained by measuring any 12 points excluding the end points of the conductive paste after drying, excluding the value of the maximum 1 point and the value of the minimum 1 point. ..
  • the first heating step is a step of heating the substrate at 200 ° C. or higher and lower than 400 ° C. in an atmosphere having an oxygen concentration of 0.5% by volume or more and 30% by volume or less.
  • the solvent is evaporated, the binder resin is decomposed and removed, and the metal particles are oxidatively sintered.
  • the reason why the conductive paste can be sintered at such a low temperature is that by setting the average particle size of the metal particles contained in the conductive paste to 15 ⁇ m or less, a sufficient specific surface area for reaction with oxygen and sintering is secured.
  • the average particle size 80 nm or more, voids through which oxygen can sufficiently enter are formed in the metal oxide structure formed by oxidizing and sintering the metal particles, and further, the oxygen concentration is further increased. This is because the oxidation reaction of the metal is rapidly advanced by setting the value to 0.5% by volume or more, and the heat generated by the oxidation of the metal is also utilized for sintering.
  • the oxygen concentration in the first heating step is not particularly limited as long as it is 0.5% by volume or more and 30% by volume or less, but is preferably more than 0.8% by volume, for example, 1% by volume or more. It is more preferably 5% by volume or more, particularly preferably more than 10% by volume, and most preferably 15% by volume or more.
  • the oxygen concentration may be more than 20% by volume.
  • the oxygen concentration is preferably 27% by volume or more, more preferably 25% by volume or less, and further preferably 23% by volume or more.
  • examples of such a gas atmosphere include oxygen, the atmosphere, and the like.
  • a gas other than the oxidizing gas and an oxidizing gas can be mixed and used.
  • an inert gas for example, nitrogen gas or argon gas
  • the metal particles can be sintered at low cost without controlling the gas atmosphere.
  • the oxidizing property of the gas atmosphere may be enhanced by adding a part of the oxidizing gas to the air.
  • the heating temperature in the first heating step is not particularly limited as long as it is 200 ° C. or higher and lower than 400 ° C., but is preferably 210 ° C. or higher, more preferably 220 ° C. or higher, and 230 ° C. or higher. It is more preferable, and it is particularly preferable that the temperature is 240 ° C. or higher.
  • the heating temperature in the first heating step is preferably 390 ° C. or lower, more preferably 380 ° C. or lower, further preferably 360 ° C. or lower, and particularly preferably less than 350 ° C. Most preferably, it is 340 ° C. or lower.
  • the heating time in the first heating step is not particularly limited, but is preferably, for example, 10 minutes or more, and preferably 15 minutes or more. On the other hand, the heating time in the first heating step is preferably 10 hours or less, and more preferably 5 hours or less.
  • the second heating step is a step of heating the substrate at 200 ° C. or higher and lower than 400 ° C. in an atmosphere containing a reducing gas.
  • the sintered body formed by the first heating is subjected to a reduction treatment, and the metal particles contained in the conductive paste are sintered. You can get a body.
  • the metal oxide structure obtained by oxidative sintering in the first heating step is reduced to obtain a sintered body composed of metal.
  • the metal particles are oxidized and sintered. When the metal is oxidized, its volume expands.
  • metal particles having an average particle size of 80 nm or more in the conductive paste voids through which the reducing gas can sufficiently enter are formed, and 200
  • the reduction can be performed at a low temperature of ° C. or higher and lower than 400 ° C.
  • such a gas atmosphere includes, for example, a mixed gas atmosphere of a reducing gas and an inert gas.
  • a mixed gas atmosphere of a reducing gas and an inert gas hydrogen, carbon monoxide, formic acid, ammonia and the like can be used as the reducing gas.
  • the inert gas for example, nitrogen gas, argon gas or the like can be used.
  • the concentration of the reducing gas in the second heating step is not particularly limited, but is preferably 0.5% by volume or more, more preferably 1% by volume or more, and more preferably 2% by volume or more. More preferred.
  • the volume ratio is 0.5% or more, the oxide of the metal element in the sintered body can be sufficiently reduced, and a sintered body having a low electrical resistivity can be obtained.
  • the heating time in the second heating step is not particularly limited, but is preferably, for example, 10 minutes or more, and preferably 15 minutes or more. On the other hand, the heating time in the second heating step is preferably 10 hours or less, and more preferably 5 hours or less.
  • the above-mentioned post-sintered substrate can be used as a wiring board as it is, it is not an essential component, but after the above-mentioned second heating step, a sintered body formed from the conductive paste is formed.
  • a pressure of 1 MPa or more and 10 MPa or less may be applied at a temperature lower than 100 ° C. (for example, room temperature).
  • the temperature in the low temperature pressurization step is not particularly limited as long as it is less than 100 ° C., but is preferably ⁇ 50 ° C. or higher, more preferably ⁇ 20 ° C. or higher, and more preferably ⁇ 10 ° C. or higher. Is more preferable, and 0 ° C. or higher is particularly preferable.
  • the reduction rate due to pressurization ((thickness before pressurization-thickness after pressurization) ⁇ thickness before pressurization) is not particularly limited, but is preferably 5% or more and 50% or less.
  • a pressure of 1 MPa or more and 10 MPa or less may be applied to the sintered body formed from the conductive paste at 100 ° C. or higher and lower than 400 ° C.
  • a pressure of 1 MPa or more and 10 MPa or less may be applied to the sintered body formed from the conductive paste at 100 ° C. or higher and lower than 400 ° C.
  • the degree of relaxation of the resistance increase can be changed by controlling the reduction rate in the case of the low temperature pressurization process and by controlling the temperature, pressure, and time in the case of the high temperature processing process.
  • the low temperature pressurization step and the high temperature pressurization step are performed, these steps are performed after the second heating step.
  • a pressure of 100 MPa or more is applied to the conductive paste or a dried product thereof, the metal particles contained in the conductive paste are densely packed, which is sufficient for efficient oxidation in the sintered body. There is a risk that voids will not be formed.
  • the voids in the metal wiring can be filled with resin from the viewpoint of improving the durability against deformation of the sintered body.
  • the resin is not particularly limited, but a thermosetting resin such as epoxy can be used.
  • a method of burying the resin for example, the resin or its solution / dispersion is immersed and dried (heated if necessary), or the monomer or its solution / dispersion is immersed and then the monomer is polymerized. There is a way to do it.
  • the metal wiring By reducing the volume fraction of the voids in the sintered body, the metal wiring can be plated from the viewpoint of reducing the electrical resistivity of the sintered body and improving the durability against deformation.
  • the plating is not particularly limited, but a conductive metal such as Cu plating, Ni plating, and Au plating can be used.
  • a plating method for example, electrolytic plating can be used.
  • the electrical resistivity of the sintered body formed from the conductive paste is not particularly limited, but is preferably less than 10 ⁇ cm.
  • the method for manufacturing an electronic component according to the present embodiment is a method including a step of manufacturing an electronic component using a wiring board manufactured by the method for manufacturing a wiring board described above.
  • this electronic component is connected to various parts in a chip resistor, a laminated chip capacitor, a chip inductor, an element probe electrode, an SMT mounting electrode, a mini LED mounting electrode, a solar cell, a hard or flexible printed wiring board, etc.
  • Electronic components can be obtained by connecting to a transistor for controlling pixel switching.
  • Examples 1-1 to 1-4, Comparative Examples 1-1 to 1-4 A conductive paste was obtained by mixing the copper particles having an average particle size of 0.3 ⁇ m in a proportion of 86% by mass and 14% by mass of the vehicle.
  • a conductive paste was printed on a polyimide film having a thickness of 35 ⁇ m as an insulating substrate by a screen printing method so as to form a straight line having a line width of 200 ⁇ m, a thickness of 20 ⁇ m, and a length of 6 cm.
  • the substrate on which the conductive paste is printed is heated in the atmosphere as the first heating step, and then in the mixed gas atmosphere of 5% by volume of hydrogen and the balance argon as the second heating step at the temperature and time conditions shown in Table 1.
  • a sample of the wiring board was obtained.
  • the electrical resistivity of the wiring board sample obtained in this way was measured by the DC four-probe method.
  • the case where the measured electrical resistivity was less than 10 ⁇ cm was evaluated as A, and the case where the electrical resistivity was 10 ⁇ cm or more was evaluated as B.
  • Table 1 shows the electrical resistivity evaluation results of each wiring board sample.
  • the breaking strain after the second heating step is 90% or more as a ratio to the breaking strain before the coating step (that is, the polyimide film which is the substrate as a raw material).
  • the breaking strain after the second heating step is 90% or more as a ratio to the breaking strain before the coating step (that is, the polyimide film which is the substrate as a raw material).
  • Example 2-1 to 2-4 Comparative Examples 2-1 to 2-4
  • Examples 1-1 to 1-4 and Comparative Examples 1-1 to 1-4 except that the heating atmosphere in the first heating step was changed to a mixed gas atmosphere of 0.5% by volume of oxygen and residual nitrogen.
  • a wiring substrate sample was obtained in the same manner.
  • Table 2 shows the electrical resistivity evaluation results and tensile test results of each wiring board sample.
  • Examples 3-1 to 3-4, Comparative examples 3-1 to 3-4) Examples 1-1 to 1-4 and Comparative Examples 1-1 to 1-4 except that the heating atmosphere in the first heating step was changed to a mixed gas atmosphere of 0.2% by volume oxygen and residual nitrogen.
  • a wiring substrate sample was obtained in the same manner.
  • Table 3 shows the electrical resistivity evaluation results and tensile test results of each wiring board sample.
  • Examplementation 4-1 to 4-4, Comparative Examples 4-1 to 4-4 Examples 1-1 to 1-4 and Comparative Examples except that the heating atmosphere in the second heating step was changed to a gas atmosphere (containing about 1% by volume of formic acid) obtained by bubbling nitrogen gas in an formic acid solution.
  • Wiring substrate samples were obtained in the same manner as 1-1 to 1-4.
  • Table 4 shows the electrical resistivity evaluation results and tensile test results of each wiring board sample.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Conductive Materials (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

La présente invention concerne un procédé de production d'une carte de câblage, ledit procédé étant apte à former une ligne de câblage métallique ayant une excellente conductivité, en particulier sur un substrat tel qu'un film isolant polymère qui n'a pas de résistance à la chaleur élevée.　Un procédé de production d'une carte de câblage selon la présente invention est caractérisé en ce qu'il comprend : une étape d'agencement dans laquelle une pâte conductrice qui contient des particules métalliques contenant un ou plusieurs éléments métalliques choisis parmi le cuivre, l'argent et le nickel est disposée sur un substrat ; une première étape de chauffage dans laquelle le substrat est chauffé à une température de 200 °C ou plus mais inférieure à 400 °C dans une atmosphère ayant une concentration en oxygène de 0,5 % en volume à 30 % en volume (inclus) ; et une seconde étape de chauffage dans laquelle le substrat est chauffé à une température de 200 °C ou plus mais inférieure à 400 °C dans une atmosphère contenant un gaz réducteur. Ce procédé de production d'une carte de câblage est également caractérisé en ce que les particules métalliques contenues dans la pâte conductrice ont une distribution de taille de particule dans laquelle le diamètre moyen de particule est de 80 nm à 15 µm (inclus). Il est préférable que ce procédé de production d'une carte de câblage comprenne en outre une étape de mise sous pression à basse température dans laquelle une pression de 1 MPa à 10 MPa (inclus) est appliquée à un corps fritté, qui est formé à partir de la pâte conductrice, à une température inférieure à 100 °C après la seconde étape de chauffage.
PCT/JP2020/024517 2019-06-26 2020-06-23 Procédé de production d'une carte de câblage et procédé de production d'un composant électronique WO2020262345A1 (fr)

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JP2019-118857 2019-06-26
JP2019118857A JP2021005640A (ja) 2019-06-26 2019-06-26 配線基板の製造方法及び電子部品の製造方法

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005177710A (ja) * 2003-12-24 2005-07-07 Seiko Epson Corp 導電性膜の形成方法及び形成装置、並びに配線基板、電気光学装置、及び電子機器
JP2014534605A (ja) * 2011-11-25 2014-12-18 昭和電工株式会社 導電パターン形成方法
JP2017069201A (ja) * 2015-09-30 2017-04-06 株式会社マテリアル・コンセプト 配線形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005177710A (ja) * 2003-12-24 2005-07-07 Seiko Epson Corp 導電性膜の形成方法及び形成装置、並びに配線基板、電気光学装置、及び電子機器
JP2014534605A (ja) * 2011-11-25 2014-12-18 昭和電工株式会社 導電パターン形成方法
JP2017069201A (ja) * 2015-09-30 2017-04-06 株式会社マテリアル・コンセプト 配線形成方法

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