WO2020259004A1

WO2020259004A1 - Thin-film encapsulation structure and manufacturing method therefor, component and encapsulation method therefor, and display panel and apparatus

Info

Publication number: WO2020259004A1
Application number: PCT/CN2020/084611
Authority: WO
Inventors: 杜帅
Original assignee: 京东方科技集团股份有限公司; 成都京东方光电科技有限公司
Priority date: 2019-06-25
Filing date: 2020-04-14
Publication date: 2020-12-30
Also published as: CN110265574A

Abstract

Provided are a thin-film encapsulation structure and a manufacturing method therefor, a component and an encapsulation method therefor, and a display panel and a display apparatus. The thin-film encapsulation structure comprises an organic thin film layer (2) covering an encapsulated device (1), wherein the organic thin film layer (2) comprises an organic matrix (21), and a phase change structure (22) distributed in the organic matrix (21), and the phase change structure (22) comprises a phase change material and performs a phase change according to heat generated by the encapsulated device (1). By using the thin-film encapsulation structure comprising the phase change structure (22), the temperature of the encapsulated device (1) does not rise rapidly, thereby effectively eliminating the problem of poor heat dissipation of the thin-film encapsulation structure and improving the service life of the encapsulated device (1).

Description

Film packaging structure and manufacturing method thereof, components and packaging method thereof, display panel and device

Technical field

The application relates to a thin film packaging structure and a manufacturing method thereof, components and packaging methods thereof, a display panel and a display device.

Background technique

At present, thin film packaging technology is widely used in some flexible devices, such as flexible organic light-emitting devices (OLED) or flexible organic solar cells.

The thin-film encapsulation layer obtained after thin-film encapsulation of the flexible device has the characteristics of light weight, thin thickness, and bendability.

Summary of the invention

The application provides a thin film packaging structure and a manufacturing method thereof, components and packaging methods thereof, a display panel and a display device, which can improve the heat dissipation performance of the thin film packaging layer.

In a first aspect, embodiments of the present disclosure provide a thin film packaging structure, including: an organic thin film layer covering a packaged device, the organic thin film layer including an organic matrix and a phase change structure distributed in the organic matrix, The phase change structure includes a phase change material, and undergoes a phase change according to the heat generated by the packaged device.

Optionally, the phase change structure includes an inner core structure and an outer wall structure, the outer wall structure covers the inner core structure, and the material of the inner core structure is a solid-liquid phase change material.

Optionally, the melting point of the core structure is lower than the temperature of the packaged device during normal operation.

Optionally, the solubility of the inner core structure and the outer wall structure are opposite.

Optionally, the surface tension of the inner core structure is greater than the surface tension of the outer wall structure.

Optionally, the material of the core structure includes one or more of crystalline hydrated salt, eutectic hydrated salt, linear alkanes, paraffins, fatty acids, polyethylene glycols, n-hexadecane, and n-octadecane .

Optionally, the material of the outer wall structure includes one or more of melamine resin, urea-formaldehyde resin, polypropylene resin, polyvinyl alcohol, epoxy resin, gelatin, gum arabic, polystyrene, and polymethyl methacrylate .

Optionally, the material of the organic matrix includes epoxy resin.

Optionally, the particle size of the phase change structure is 10 nm to 500 nm.

Optionally, the film packaging structure further includes a first inorganic film layer and a second inorganic film layer;

The first inorganic film layer covers the packaged device and is located on the side of the organic film layer close to the packaged device;

The second inorganic film layer covers the packaged device and is located on the side of the organic film layer away from the packaged device.

Optionally, the material of the first inorganic thin film layer and the second inorganic thin film layer includes one of Al ₂ O ₃ , MgF ₂ , and SiOx.

Optionally, the thickness of the organic thin film layer is between 2000 nm and 3000 nm.

Optionally, the thickness of the first inorganic thin film layer and the second inorganic thin film layer is between 500 nm and 800 nm.

In a second aspect, the embodiments of the present disclosure provide a component, including the thin film packaging structure provided in the first aspect and a device to be packaged, and the device to be packaged is covered with the thin film packaging structure.

Optionally, the melting point of the core structure is lower than the temperature of the device to be packaged during normal operation.

Optionally, the thin film packaging structure further includes a first inorganic thin film layer and a second inorganic thin film layer, wherein the first inorganic thin film layer covers the device to be packaged and is located on the organic thin film layer close to the device to be packaged. One side of the device; the second inorganic film layer covers the device to be packaged, and is located on the side of the organic film layer away from the device to be packaged.

In a third aspect, an embodiment of the present disclosure provides a display panel including the components provided in the second aspect.

In a fourth aspect, an embodiment of the present disclosure provides a display device including the display panel provided in the third aspect.

In a fifth aspect, embodiments of the present disclosure provide a method for manufacturing a thin film packaging structure, including:

Mixing the solution containing the phase change structure with the organic matrix solution to form an organic mixed solution;

The organic thin film layer is formed by using the organic mixed solution, wherein the organic mixed solution is fabricated on a packaged device, the phase change structure includes a phase change material, and the phase change is performed according to the heat generated by the packaged device.

Optionally, the mass ratio of the solution containing the phase change structure to the organic matrix solution is 5:95 to 20:80.

In a sixth aspect, embodiments of the present disclosure provide a method for packaging components, including: mixing a solution containing a phase change structure with an organic matrix solution to form an organic mixed solution; and fabricating the organic mixed solution on the packaged device , Forming an organic thin film layer; wherein the phase change structure includes a phase change material, and the phase change is performed according to the heat generated by the packaged device.

Optionally, before the organic mixed solution is prepared on the packaged device to form an organic thin film layer, the packaging method further includes: forming a first inorganic thin film layer on the packaged device; After the solution is prepared on the packaged device and the organic thin film layer is formed, the packaging method further includes: forming a second inorganic thin film layer on the organic thin film layer.

Description of the drawings

The above and/or additional aspects and advantages of the present application will become obvious and easy to understand from the following description of the embodiments in conjunction with the accompanying drawings, in which:

FIG. 1 is a schematic structural diagram of a thin film packaging structure provided by an embodiment of the present application;

2 is a schematic structural diagram of another thin-film packaging structure provided by an embodiment of the present application;

FIG. 3 is a flowchart of a manufacturing method of a thin film packaging structure provided by an embodiment of the present application.

Description of reference signs:

1- encapsulated device; 2- organic film layer; 21- organic matrix; 22- phase change structure;

3-The first inorganic film layer; 4-The second inorganic film layer.

Detailed ways

In order to make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present disclosure will be described clearly and completely in conjunction with the accompanying drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by those of ordinary skill in the art without creative labor are within the protection scope of the present disclosure.

Unless otherwise defined, the technical terms or scientific terms used in the present disclosure shall have the usual meanings understood by those with ordinary skills in the field to which this disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity, or importance, but are only used to distinguish different components. "Include" or "include" and other similar words mean that the element or item appearing before the word encompasses the element or item listed after the word and its equivalents, but does not exclude other elements or items. Similar words such as "connected" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "Down", "Left", "Right", etc. are only used to indicate the relative position relationship. When the absolute position of the described object changes, the relative position relationship may also change accordingly.

Those skilled in the art can understand that, unless otherwise defined, all terms (including technical terms and scientific terms) used herein have the same meaning as those commonly understood by those of ordinary skill in the art to which this application belongs. It should also be understood that terms such as those defined in general dictionaries should be understood to have a meaning consistent with the meaning in the context of the prior art, and unless specifically defined as here, they will not be idealized or overly Explain the formal meaning.

A thin film packaging technology is a packaging method in which organic thin films or inorganic thin films are alternately deposited on the surface of the device by deposition technology. Although the thin film packaging layer formed in this way has better water and oxygen insulation performance for flexible devices, it has better heat dissipation. Poor, which will affect the service life of the flexible device.

The following describes exemplary technical solutions of the embodiments of the present application in conjunction with the drawings.

As shown in Figure 1, a thin film packaging structure provided by an embodiment of the present application includes an organic thin film layer 2 covering the packaged device 1; the organic thin film layer 2 includes an organic matrix 21 and phase change distributed in the organic matrix 21 The structure 22, the phase change structure includes a phase change material, and the phase change structure 22 undergoes a phase change according to the heat generated by the packaged device 1.

The thin film packaging structure provided by the embodiments of the present application includes an organic thin film layer 2, and the organic thin film layer 2 includes a phase change structure 22. Since the phase change structure 22 can undergo a phase change according to the heat generated by the packaged device 1, the phase change structure 22 can absorb The heat dissipation of the packaged device 1 during operation, and the absorbed heat is used to provide the phase change structure 22 to produce a phase change, so that the temperature of the packaged device 1 itself will not be too high; when the packaged device 1 no longer dissipates heat, the phase can be used The reverse phase change process of the variable structure 22 releases heat, thereby prolonging the heat dissipation time, and will not cause the temperature of the packaged device 1 to rise rapidly, which can effectively solve the problem of poor heat dissipation of the thin film package structure, thereby improving the use of the packaged device 1 life.

In an alternative embodiment, the phase change structure 22 includes an inner core structure and an outer wall structure, the outer wall structure covers the inner core structure, and the material of the inner core structure is a solid-liquid phase change material. For example, the phase change structure 22 is a composite particle with no fixed shape. Of course, in the actual selection of materials, the material of the core structure can also be selected from solid-solid phase change materials, solid-gas phase change materials, liquid-gas phase change materials, etc. The implementation of this application The example only takes the material of the core structure as a solid-liquid phase change material as an example.

For example, when the packaged device 1 generates heat during operation, the heat will be absorbed by the solid-liquid phase change material, and the solid-liquid phase change material will produce a phase change process from solid to liquid after absorbing the heat, which will not cause the encapsulated The temperature of the device 1 is too high; when the packaged device 1 stops working and no longer dissipates heat, the solid-liquid phase change material will undergo a phase change process from liquid to solid. This process will release heat, that is, the process can transform the packaged device 1 The generated heat is released into the external environment. In this way, the packaged device 1 uses the phase change process of the solid-liquid phase change material to extend the heat dissipation time, and will not cause the packaged device 1 to rise rapidly in a short period of time, thereby improving the packaged device 1 Service life.

The melting point of the core structure in the embodiment of the present application is lower than the temperature of the packaged device 1 during normal operation. For example, the material of the core structure is a solid-liquid phase change material, and the melting point is the temperature at which a solid transforms its physical state from a solid to a liquid. The melting point of the solid-liquid-phase change material is lower than the temperature of the packaged device 1 during normal operation. Therefore, when the packaged device 1 generates heat during operation, the heat will be absorbed by the solid-liquid-phase change material, and the solid-liquid-phase change material will change after absorption. It is the phase change process of liquid.

For example, in the embodiment of the present application, the surface tension of the inner core structure is greater than the surface tension of the outer wall structure, which can effectively prevent the phase change structure from cracking during the phase change process.

The embodiment of this application requires that the inner core structure and the outer wall structure do not react. For example, the solubility of the inner core structure and the outer wall structure in the embodiment of the present application is opposite. In this way, it can be ensured that the inner core structure and the outer wall structure do not react during the phase change process. The stability of the phase change structure.

For example, the material of the core structure in the embodiments of the present application includes one of crystalline hydrated salt, eutectic hydrated salt, linear alkanes, paraffins, fatty acids, polyethylene glycols, n-hexadecane, and n-octadecane Or more; the material of the outer wall structure includes one or more of melamine resin, urea-formaldehyde resin, polypropylene resin, polyvinyl alcohol, epoxy resin, gelatin, gum arabic, polystyrene, polymethyl methacrylate ; The material of the organic matrix includes epoxy resin. Exemplary materials for the inner core structure, outer wall structure and organic matrix will be described in detail below in conjunction with exemplary embodiments.

For example, the particle size of the phase change structure in the embodiment of the present application is 10 nm to 500 nm. In this way, the organic thin film layer can be made into a nano-level film layer, which makes the thickness of the thin film packaging structure thinner, which is more conducive to actual production needs.

In an alternative embodiment, as shown in FIG. 2, the thin film packaging structure provided by the embodiment of the present application further includes a first inorganic thin film layer 3 and a second inorganic thin film layer 4, and the first inorganic thin film layer 3 covers and is encapsulated The device 1 is located on the side of the organic thin film layer 2 close to the packaged device 1; the second inorganic thin film layer 4 covers the packaged device 1 and is located on the side of the organic thin film layer 2 away from the packaged device 1; this thin film packaging structure Can play a good role in blocking water and oxygen.

For example, Figure 2 only shows two inorganic thin film layers and one organic thin film layer. In actual design, the inorganic thin film layer and the organic thin film layer can be alternately designed for multiple layers, that is, the second inorganic thin film layer in Figure 2 4 can be provided with a layer of organic thin film layer 2 and another layer of inorganic thin film layer on the organic thin film layer 2. Of course, in the actual design, the thickness of the thin film packaging structure and the packaging effect of the thin film packaging structure are taken into consideration. Generally, the thin film packaging structure is designed as shown in FIG. 2.

For example, the material of the first inorganic thin film layer and the second inorganic thin film layer includes one of Al ₂ O ₃ , MgF ₂ , and SiOx.

For example, the thickness of the organic thin film layer is between 2000 nm and 3000 nm.

For example, the thickness of the first inorganic thin film layer and the second inorganic thin film layer is between 500 nm and 800 nm.

Three exemplary embodiments are given below to describe in detail a thin film packaging structure provided by the embodiments of the present application.

Example one:

As shown in FIG. 2, the thin film packaging structure includes a first inorganic thin film layer 3, an organic thin film layer 2, and a second inorganic thin film layer 4 sequentially covering the packaged device 1. In this embodiment, the first inorganic thin film layer 3 and The material of the second inorganic film layer 4 is aluminum oxide (Al ₂ O ₃ ) with a thickness of 800 nanometers (nm); the material of the organic matrix included in the organic film layer 2 is epoxy resin, and the organic film layer 2 includes The material of the outer wall structure of the phase change structure is polystyrene, the material of the core structure of the phase change structure is n-octadecane, the particle size of the phase change structure is 120 nm, and the thickness of the organic thin film layer 2 is 2000 nm.

Embodiment two:

As shown in FIG. 2, the thin film packaging structure includes a first inorganic thin film layer 3, an organic thin film layer 2, and a second inorganic thin film layer 4 sequentially covering the packaged device 1. In this embodiment, the first inorganic thin film layer 3 and The material of the second inorganic thin film layer 4 is magnesium fluoride (MgF ₂ ) with a thickness of 500 nm; the material of the organic matrix included in the organic thin film layer 2 is epoxy resin, and the outer wall structure of the phase change structure included in the organic thin film layer 2 is The material is polymethyl methacrylate, the material of the core structure of the phase change structure is n-hexadecane, the particle size of the phase change structure is 150 nm, and the thickness of the organic thin film layer 2 is 3000 nm.

Example three:

As shown in FIG. 2, the thin film packaging structure includes a first inorganic thin film layer 3, an organic thin film layer 2, and a second inorganic thin film layer 4 sequentially covering the packaged device 1. In this embodiment, the first inorganic thin film layer 3 and The material of the second inorganic thin film layer 4 is silicon oxide (SiO _x ) with a thickness of 700 nm; the organic matrix material included in the organic thin film layer 2 is epoxy resin, and the organic thin film layer 2 includes a phase change structure outer wall structure material It is polystyrene, the material of the core structure of the phase change structure is paraffin, the particle size of the phase change structure is 200 nm, and the thickness of the organic thin film layer 2 is 2500 nm.

Based on the same inventive concept, the embodiments of the present application also provide a component, including the above-mentioned thin-film packaging structure provided by the embodiments of the present application, and further including a device to be packaged, and the device to be packaged is covered with the thin-film packaging structure.

For example, the melting point of the core structure is lower than the temperature of the device to be packaged during normal operation.

For example, the thin film packaging structure further includes a first inorganic thin film layer and a second inorganic thin film layer, wherein the first inorganic thin film layer covers the device to be packaged and is located on the organic thin film layer close to the device to be packaged. One side; the second inorganic film layer covers the device to be packaged, and is located on the side of the organic film layer away from the device to be packaged.

Since the components include the above-mentioned thin-film packaging structure in the embodiments of the present application, the components provided in the embodiments of the present application have the same beneficial effects as the thin-film packaging structure, and will not be repeated here.

Based on the same inventive concept, embodiments of the present application also provide a display panel, which includes the above-mentioned components provided in the embodiments of the present application. Since the display panel includes the above-mentioned components provided in the embodiments of the present application, the display panel provided in the embodiments of the present application has the same beneficial effects as the components, and will not be repeated here.

Based on the same inventive concept, an embodiment of the present application further provides a display device, which includes the above-mentioned display panel provided by the embodiment of the present application. Since the display device includes the above-mentioned display panel provided in the embodiment of the present application, the display device provided in the embodiment of the present application has the same beneficial effects as the display panel, and will not be repeated here.

Based on the same inventive concept, an embodiment of the present application also provides a manufacturing method of a thin film packaging structure, as shown in FIG. 3, the method includes:

S301, mixing the solution containing the phase change structure with the organic matrix solution to form an organic mixed solution;

S302. Using the organic mixed solution to form an organic thin film layer, wherein the organic mixed solution is fabricated on the packaged device,

The phase change structure includes a phase change material, and the phase change is performed according to the heat generated by the packaged device.

In the embodiments of the present application, the size and filling amount of the phase change structure in the solution containing the phase change structure can be adjusted according to actual needs to adapt to different products. For example, the mass ratio of the solution containing the phase change structure to the organic matrix solution can be adjusted from 5:95 to 20:80 to meet the needs of different products; for large-size products, after coating the organic mixed solution, the resulting The area of the organic thin film layer is relatively large. Therefore, when used for size products, the mass ratio of the solution containing the phase change structure to the organic matrix solution can be selected to be higher.

The manufacturing method of the thin film packaging structure of the first to third embodiments described above will be described in detail below.

Embodiment 1 Manufacturing method of thin film packaging structure:

First, a layer of Al ₂ O _{3 with} a thickness of 800 nm is deposited on the packaged device 1 by means of plasma enhanced chemical vapor deposition.

Then, a polystyrene-coated n-octadecane phase change structure is produced, and the solution containing the phase change structure is mixed with the epoxy resin solution to form an organic mixed solution, for example, a solution containing the phase change structure and an organic matrix solution The mass ratio of is 5:95 to 20:80; then the organic mixed solution is made on Al ₂ O ₃ by spin coating or inkjet printing to form an organic thin film layer 2, for example, an organic thin film with a thickness of 2000 nm can be produced Layer 2.

Finally, a layer of Al ₂ O _{3 with} a thickness of 800 nm is deposited on the organic thin film layer 2 using a plasma enhanced chemical vapor deposition method.

Embodiment 2 Method for manufacturing thin film packaging structure:

First, a layer of MgF _{2 with} a thickness of 500 nm is deposited on the packaged device 1 using a plasma enhanced chemical vapor deposition method.

Then, the phase change structure of polymethyl methacrylate coated n-hexadecane is made, and the solution containing the phase change structure is mixed with the epoxy resin solution to form an organic mixed solution, for example, the solution containing the phase change structure and The mass ratio of the organic matrix solution is 5:95 to 20:80; then the organic mixed solution is fabricated on the MgF ₂ by spin coating or inkjet printing to form the organic thin film layer 2, for example, an organic film with a thickness of 3000 nm can be fabricated.膜层2。 Film layer 2.

Finally, a layer of MgF _{2 with} a thickness of 500 nm is deposited on the organic thin film layer 2 using a plasma enhanced chemical vapor deposition method.

Embodiment 3 Manufacturing method of thin film packaging structure:

First, a layer of SiOx with a thickness of 700 nm is deposited on the packaged device 1 using a plasma enhanced chemical vapor deposition method.

Then, make the phase change structure of polystyrene coated paraffin wax, and mix the solution containing the phase change structure with the epoxy resin solution to form an organic mixed solution, for example, the mass ratio of the solution containing the phase change structure to the organic matrix solution The range is from 5:95 to 20:80; then the organic mixed solution is fabricated on SiOx by spin coating or inkjet printing to form the organic thin film layer 2, which can be specifically fabricated to form an organic thin film layer 2 with a thickness of 2500 nm.

Finally, a layer of SiOx with a thickness of 700 nm is deposited on the organic thin film layer 2 using a plasma-enhanced chemical vapor deposition method.

The embodiment of the present disclosure also provides a method for packaging components, including: mixing a solution containing a phase change structure with an organic matrix solution to form an organic mixed solution; and fabricating the organic mixed solution on a packaged device to form an organic The film layer; the phase change structure includes a phase change material, and the phase change is performed according to the heat generated by the packaged device.

For example, before the organic mixed solution is prepared on the packaged device to form an organic thin film layer, the packaging method further includes: forming a first inorganic thin film layer on the packaged device; After the organic thin film layer is formed on the packaged device, the packaging method further includes: forming a second inorganic thin film layer on the organic thin film layer.

For example, the mass ratio of the solution containing the phase change structure to the organic matrix solution is 5:95 to 20:80.

In summary, the film packaging structure provided by this application has the following beneficial effects:

The thin film packaging structure provided by the embodiments of the present application includes an organic thin film layer, and the organic thin film layer includes a phase change structure. Since the phase change structure can undergo phase change according to the heat generated by the packaged device, the phase change structure can absorb the encapsulated device during operation. Heat dissipation, the absorbed heat is used to provide phase change to the phase change structure, and will not cause the packaged device itself to become too hot; when the packaged device no longer dissipates heat, the phase change process of the phase change structure can be used to release heat, thereby The heat dissipation time is prolonged, and the temperature of the packaged device itself is not caused to rise rapidly, which can effectively solve the problem of poor heat dissipation of the thin film package structure in the prior art, thereby increasing the service life of the packaged device.

The above are only part of the implementation of this application. It should be pointed out that for those of ordinary skill in the art, without departing from the principle of this application, several improvements and modifications can be made, and these improvements and modifications are also Should be regarded as the scope of protection of this application.

This application claims the priority of Chinese patent application No. 201910555402.0 filed on June 25, 2019, and the full text of the Chinese patent application is incorporated herein by reference as a part of this application.

Claims

A thin film packaging structure, including:

Organic film layer, covering the packaged device,

The organic thin film layer includes an organic matrix and a phase change structure distributed in the organic matrix. The phase change structure includes a phase change material and undergoes a phase change according to the heat generated by the packaged device.
The thin film packaging structure according to claim 1, wherein the phase change structure comprises an inner core structure and an outer wall structure, the outer wall structure encapsulates the inner core structure, and a material of the inner core structure is a solid-liquid phase change material.
4. The thin film packaging structure of claim 2, wherein the melting point of the core structure is lower than the temperature of the packaged device during normal operation.
4. The thin film packaging structure of claim 2, wherein the core structure and the outer wall structure have opposite solubility.
3. The film packaging structure of claim 2, wherein the surface tension of the core structure is greater than the surface tension of the outer wall structure.
The film packaging structure according to any one of claims 2-5, wherein the material of the core structure includes crystalline hydrated salt, eutectic hydrated salt, linear alkanes, paraffins, fatty acids, polyethylene glycols, One or more of n-hexadecane and n-octadecane.
The film packaging structure according to any one of claims 2-5, wherein the material of the outer wall structure comprises melamine resin, urea resin, polypropylene resin, polyvinyl alcohol, epoxy resin, gelatin, gum arabic, poly One or more of styrene and polymethyl methacrylate.
The thin film packaging structure according to claim 1, wherein the material of the organic matrix includes epoxy resin.
The thin film packaging structure according to claim 1, wherein the particle size of the phase change structure is 10 nm to 500 nm.
The thin film packaging structure according to any one of claims 1-5 and 8-9, further comprising a first inorganic thin film layer and a second inorganic thin film layer;

The first inorganic thin film layer covers the packaged device and is located on the side of the organic thin film layer close to the packaged device;

The second inorganic thin film layer covers the packaged device and is located on the side of the organic thin film layer away from the packaged device.
10. The thin film packaging structure according to claim 10, wherein the material of the first inorganic thin film layer and the second inorganic thin film layer includes one of Al 2 O 3 , MgF 2 , and SiOx.
The thin film packaging structure according to any one of claims 1-11, wherein the thickness of the organic thin film layer is between 2000 nm and 3000 nm.
11. The thin film packaging structure according to claim 11, wherein the thickness of the first inorganic thin film layer and the second inorganic thin film layer is between 500 nm and 800 nm.
A component including:

5. The film packaging structure according to any one of claims 1-13;

The device to be packaged is covered with the film package structure.
The component according to claim 14, wherein the melting point of the core structure is lower than the temperature of the device to be packaged during normal operation.
The component according to claim 14 or 15, wherein the film packaging structure further comprises a first inorganic film layer and a second inorganic film layer,

The first inorganic film layer covers the device to be packaged and is located on the side of the organic film layer close to the device to be packaged;

The second inorganic thin film layer covers the device to be packaged and is located on the side of the organic thin film layer away from the device to be packaged.
A display panel comprising the components according to any one of claims 14-16.
A display device, comprising the display panel of claim 17.
A manufacturing method of a thin film packaging structure includes:

Mixing the solution containing the phase change structure with the organic matrix solution to form an organic mixed solution;

Using the organic mixed solution to form an organic thin film layer, wherein the organic mixed solution is fabricated on the packaged device;

The phase change structure includes a phase change material, and the phase change is performed according to the heat generated by the packaged device.
The manufacturing method according to claim 19, wherein the mass ratio of the solution containing the phase change structure to the organic matrix solution is 5:95 to 20:80.
A method for packaging components, including:

Mixing the solution containing the phase change structure with the organic matrix solution to form an organic mixed solution;

Fabricating the organic mixed solution on the packaged device to form an organic thin film layer;

The phase change structure includes a phase change material, and the phase change is performed according to the heat generated by the packaged device.
22. The packaging method of claim 21, before the organic mixed solution is fabricated on the packaged device to form an organic thin film layer, further comprising:

Forming a first inorganic thin film layer on the packaged device;

After the organic mixed solution is fabricated on the packaged device to form an organic thin film layer, the packaging method further includes:

A second inorganic thin film layer is formed on the organic thin film layer.
22. The packaging method according to claim 21, wherein the mass ratio of the solution containing the phase change structure to the organic matrix solution is 5:95 to 20:80.