CN115911138A - Packaging structure, packaging method and display device - Google Patents
Packaging structure, packaging method and display device Download PDFInfo
- Publication number
- CN115911138A CN115911138A CN202111142964.6A CN202111142964A CN115911138A CN 115911138 A CN115911138 A CN 115911138A CN 202111142964 A CN202111142964 A CN 202111142964A CN 115911138 A CN115911138 A CN 115911138A
- Authority
- CN
- China
- Prior art keywords
- layer
- change material
- phase change
- heat
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000012782 phase change material Substances 0.000 claims abstract description 74
- 230000017525 heat dissipation Effects 0.000 claims abstract description 62
- 230000008859 change Effects 0.000 claims abstract description 17
- 238000005538 encapsulation Methods 0.000 claims description 56
- 239000000463 material Substances 0.000 claims description 52
- 230000005693 optoelectronics Effects 0.000 claims description 40
- 238000000151 deposition Methods 0.000 claims description 26
- 239000011810 insulating material Substances 0.000 claims description 16
- 239000012071 phase Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000007791 liquid phase Substances 0.000 claims description 5
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 claims description 4
- 239000007790 solid phase Substances 0.000 claims description 4
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 3
- 239000000194 fatty acid Substances 0.000 claims description 3
- 229930195729 fatty acid Natural products 0.000 claims description 3
- 150000004665 fatty acids Chemical class 0.000 claims description 3
- 229920005862 polyol Polymers 0.000 claims description 3
- 150000003077 polyols Chemical class 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 abstract description 10
- 239000001301 oxygen Substances 0.000 abstract description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 9
- 239000005022 packaging material Substances 0.000 abstract description 4
- 230000002411 adverse Effects 0.000 abstract description 3
- 230000000903 blocking effect Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 210
- 239000000243 solution Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 9
- 239000002096 quantum dot Substances 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 238000007641 inkjet printing Methods 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- -1 graphite alkene Chemical class 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 229910002027 silica gel Inorganic materials 0.000 description 3
- 239000000741 silica gel Substances 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000000053 physical method Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000010129 solution processing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- DKHNGUNXLDCATP-UHFFFAOYSA-N dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile Chemical compound C12=NC(C#N)=C(C#N)N=C2C2=NC(C#N)=C(C#N)N=C2C2=C1N=C(C#N)C(C#N)=N2 DKHNGUNXLDCATP-UHFFFAOYSA-N 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- ODGAOXROABLFNM-UHFFFAOYSA-N polynoxylin Chemical compound O=C.NC(N)=O ODGAOXROABLFNM-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- QXJQHYBHAIHNGG-UHFFFAOYSA-N trimethylolethane Chemical compound OCC(C)(CO)CO QXJQHYBHAIHNGG-UHFFFAOYSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The application discloses a packaging structure, a packaging method and a display device, wherein the packaging structure uses an organic packaging layer embedded with a heat dissipation part in the packaging structure, and a phase change material layer in the heat dissipation part can absorb partial heat generated by the packaged photoelectric device during working through phase change, so that the temperature of the device is prevented from being too high, and the performance of the device is prevented from being influenced; on the other hand, the heat dissipation part is arranged in the organic packaging layer in an embedded mode, so that the characteristics of the organic packaging material cannot be changed, the heat dissipation effect and the film forming quality of the organic packaging layer can be considered, the characteristics of the organic packaging layer as a planarization layer are not influenced, and adverse effects on the manufacturing process of the organic packaging layer and the light emission of a device are not brought; in addition, the heat dissipation part embedded in the organic packaging layer can block water and oxygen, and the water and oxygen blocking effect of the organic packaging layer can be improved.
Description
Technical Field
The present application relates to the field of display technologies, and in particular, to a package structure, a package method, and a display device.
Background
Photoelectric devices are semiconductor devices based on organic or inorganic materials, and have wide applications in the fields of new energy, sensing, communication, display, illumination, and the like, such as solar cells, photodetectors, organic Light-Emitting Diodes (OLEDs), quantum Dot Light-Emitting Diodes (QLEDs), and the like. The functional layer material in the photoelectric device structure is very sensitive to pollutants, water, oxygen and the like in the atmosphere, is easy to be corroded by the external environment under the condition of no isolation protection, and seriously influences the service life of the photoelectric device. Therefore, the photoelectric device has higher packaging requirements in practical application so as to ensure that the device has longer service life.
Thin-Film Encapsulation (TFE) is one of the mainstream Encapsulation technologies of the current photoelectric devices, and the Encapsulation structure is formed by overlapping and repeating an inorganic Encapsulation layer and an organic Encapsulation layer, wherein the inorganic Encapsulation layer is a water-oxygen barrier layer, and the organic Encapsulation layer is a planarization layer. Wherein the inorganic packaging layer adopts Al 2 O 3 、SiO x 、SiN x Inorganic materials are used as the water oxygen barrier layer, the organic packaging layer is a polymer film layer of acrylic resin monomer or epoxy resin monomer, and the organic packaging layer is suitable for manufacturing large-size and flexible devices.
However, the thin film encapsulation technology still faces many problems, for example, the organic encapsulation layer has poor high temperature resistance and heat dissipation performance due to the characteristics of the material itself, and thus, the existing thin film encapsulation technology needs to be further developed.
Disclosure of Invention
The application provides a packaging structure, a packaging method and a display device, aiming at improving the heat dissipation performance of the packaging structure.
In a first aspect, an embodiment of the present application provides an encapsulation structure for encapsulating an optoelectronic device, including: the photovoltaic device comprises at least one organic packaging layer covering the photovoltaic device, wherein a heat dissipation part is embedded in the organic packaging layer and comprises a phase-change material layer.
Optionally, the heat dissipation portion further includes a first heat conduction layer, the first heat conduction layer is located on a side of the phase change material layer away from the optoelectronic device, and the thermal conductivity of the first heat conduction layer is higher than that of the phase change material layer;
or the heat dissipation part further comprises a second heat conduction layer, the second heat conduction layer is located on one side, close to the photoelectric device, of the phase-change material layer, the heat conductivity of the second heat conduction layer is lower than that of the first heat conduction layer, and the heat conductivity of the second heat conduction layer is higher than that of the thermal phase-change material layer.
Optionally, the first heat conducting layer is made of at least one material selected from a metal, an inorganic insulating material, an organic insulating material and a two-dimensional material; and/or the presence of a gas in the gas,
the second heat conducting layer is made of at least one of metal, inorganic insulating material, organic insulating material and two-dimensional material.
Optionally, the thickness of the heat dissipation portion is smaller than that of the organic encapsulation layer, the thickness of the organic encapsulation layer is 15nm-2 μm, and/or the thickness of the first heat conduction layer is 5 nm-800 nm, and/or the thickness of the second heat conduction layer is 5 nm-800 nm, and/or the thickness of the phase change material layer is 5 nm-1.9 μm.
Optionally, the heat dissipation portion is composed of a phase change material layer, a first heat conduction layer and a second heat conduction layer;
the first heat conduction layer is positioned on one side, far away from the photoelectric device, of the phase-change material layer;
the second heat conduction layer is positioned on one side, close to the photoelectric device, of the phase-change material layer;
the thermal conductivity of the first heat conduction layer is higher than that of the second heat conduction layer, and the thermal conductivity of the first heat conduction layer and the thermal conductivity of the second heat conduction layer are both higher than that of the thermal phase change material layer.
Optionally, the phase change material layer has phase variability when the optoelectronic device generates heat, and the phase change material of the phase change material layer is selected from at least one of a solid-liquid phase change material and a solid-solid phase change material.
Optionally, the phase change material is selected from at least one of aliphatic hydrocarbons, fatty acids and polyols.
Optionally, the phase transition temperature of the phase change material is lower than the operating temperature of the photoelectric device.
Optionally, an orthographic projection of the heat sink portion covers an orthographic projection of the optoelectronic device.
Optionally, the package structure further includes at least one inorganic package layer, the inorganic package layers and the organic package layers are alternately stacked, and at least one organic package layer directly contacts the optoelectronic device.
In a second aspect, embodiments of the present application further provide a method for packaging an optoelectronic device, including:
depositing an organic packaging layer on a photoelectric device to be packaged for the first time;
arranging a mold in an area on the organic packaging layer deposited for the first time, and continuously depositing the organic packaging layer for the second time on the organic packaging layer deposited for the first time around the area where the mold is located;
removing the mold, and depositing a heat dissipation part in the original area of the mold; and
continuously depositing an organic packaging layer for the third time above the organic packaging layer deposited for the second time and the heat dissipation part to obtain the organic packaging layer embedded with the heat dissipation part;
wherein the heat dissipation part comprises a phase change material layer.
Optionally, the heat dissipation portion further includes a first heat conduction layer, the step of removing the mold and depositing the heat dissipation portion in an original region of the mold includes:
and removing the die, and sequentially depositing a phase change material layer and a first heat conduction layer in the original region of the die from bottom to top.
Optionally, the heat dissipation portion further includes a second heat conduction layer, the step of removing the mold and depositing the heat dissipation portion in the original region of the mold includes: and removing the die, and sequentially depositing a second heat conduction layer, a phase change material layer and a first heat conduction layer in the original region of the die from bottom to top.
In a third aspect, embodiments of the present application further provide a display device, including an optoelectronic device, and the package structure described in the first aspect, or including an optoelectronic device, and the package structure prepared by the method described in the second aspect.
Has the advantages that:
the organic packaging layer embedded with the heat dissipation part is used for the packaging structure, and the phase change material layer in the heat dissipation part can absorb part of heat generated by the packaged photoelectric device during working through phase change, so that the phenomenon that the temperature of the device is too high to influence the performance of the device is prevented; on the other hand, the heat dissipation part is arranged in the organic packaging layer in an embedded mode, so that the characteristics of the organic packaging material cannot be changed, the heat dissipation effect and the film forming quality of the organic packaging layer can be considered, the characteristics of the organic packaging layer as a planarization layer are not influenced, and adverse effects on the manufacturing process of the organic packaging layer and the light emission of a device are not brought; in addition, the heat dissipation part embedded in the organic packaging layer can block water and oxygen, and the water and oxygen blocking effect of the organic packaging layer can be improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings used in the description of the embodiments will be briefly described below.
Fig. 1 is a schematic structural diagram of a first package structure provided in an embodiment of the present application;
fig. 2 is a schematic structural diagram of a photovoltaic device provided by an embodiment of the present application;
fig. 3 is a schematic structural diagram of a second package structure provided in the embodiment of the present application;
fig. 4 is a schematic structural diagram of a third package structure provided in the embodiment of the present application;
fig. 5 is a schematic flow chart of a method for manufacturing a package structure according to an embodiment of the present disclosure;
fig. 6 is a schematic view of a package structure during a manufacturing method of the package structure provided in the embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be described clearly and completely with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The embodiment of the application provides a packaging structure, a packaging method and a display device. The following are detailed descriptions. It should be noted that the following description of the embodiments is not intended to limit the preferred order of the embodiments. In addition, in the description of the present application, the term "including" means "including but not limited to". The terms first, second, third and the like are used merely as labels, and do not impose numerical requirements or an established order. Various embodiments of the present application may exist in a range of versions; it is to be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as an inflexible limitation on the scope of the application; accordingly, the described range descriptions should be considered to have specifically disclosed all the possible sub-ranges as well as individual numerical values within that range. Whenever a numerical range is indicated herein, it is meant to include any number (fractional or integer) recited within the indicated range.
First, referring to fig. 1 to 4, the present application provides a package structure for packaging an optoelectronic device 20, the package structure comprising: at least one organic encapsulation layer 30 overlying the optoelectronic device 20, the organic encapsulation layer 30 having embedded therein a heat sink portion, in some embodiments, as shown in fig. 1, the heat sink portion being completely surrounded by the organic encapsulation layer 30, the heat sink portion including a phase change material layer 42.
For the present embodiment, the thermal phase change material is a transparent organic material and has a thermal conductivity, and the thermal phase change material generally absorbs heat in a solid-solid or solid-liquid phase change manner and dissipates heat in an inverse phase change manner.
The organic packaging layer 30 embedded with the heat dissipation part is used for a packaging structure, the phase change material layer 42 in the heat dissipation part can absorb partial heat generated by the packaged photoelectric device 20 during working through phase change, when the device does not work or the generated heat is continuously lower than the phase change temperature of the thermal phase change material, the heat of the phase change material layer 42 can be slowly released, the heat dissipation time is prolonged, and the phenomenon that the performance of the device is influenced due to overhigh temperature of the device is prevented; on the other hand, because the heat dissipation part is arranged in the organic packaging layer 30 in an embedded manner, the characteristics of the organic packaging material cannot be changed, the heat dissipation effect and the film forming quality of the organic packaging layer can be considered, the characteristics of the organic packaging layer as a planarization layer are not influenced, and adverse effects on the manufacturing process of the organic packaging layer 30 and the light emission of devices are not brought; in addition, the heat dissipation part embedded in the organic encapsulation layer 30 can block water and oxygen, and the water and oxygen blocking effect of the organic encapsulation layer 30 can be improved.
In some embodiments, the phase change material layer 42 has phase variability when the optoelectronic device 20 generates heat, the phase change material of the phase change material layer 42 is selected from at least one of a solid-liquid phase change material and a solid-solid phase change material, and the solid-liquid phase change material or the solid-solid phase change material may be selected from at least one of aliphatic hydrocarbons, fatty acids, and polyols. The aliphatic hydrocarbon material includes but is not limited to a linear alkane material and a modified or composite material thereof, the aliphatic acid material includes but is not limited to a lauric acid material, a capric acid material and a modified or composite material thereof, and the polyalcohol material includes but is not limited to pentaerythritol, trimethylolethane, neopentyl glycol, trimethylolaminomethane and the like and a composite material thereof.
In some embodiments, the organic encapsulation layer 30 material includes, but is not limited to, epoxy, phenolic, urea-formaldehyde, and polymethyl methacrylate polymers.
In some embodiments of the present application, the optoelectronic device 20 is disposed on the substrate 10, where the optoelectronic device 20 is specifically a quantum dot light emitting diode device, please refer to fig. 2, fig. 2 shows a schematic structural diagram of a quantum dot light emitting diode device with an inverted structure, and the quantum dot light emitting diode device 20 includes: the cathode 21 is arranged on the substrate 10, the electron transport layer 22 is arranged on the cathode 21, the quantum dot light emitting layer 23 is arranged on the electron transport layer 22, the hole transport layer 24 is arranged on the quantum dot light emitting layer 23, the hole injection layer 25 is arranged on the hole transport layer 24, and the anode 26 is arranged on the hole injection layer 25.
The material of each functional layer in the present embodiment may beTo employ materials commonly known in the art. For example, the substrate 10 may be, for example, a glass substrate; the material of the cathode 21 may be, for example, indium Tin Oxide (ITO); the electron transport layer 22 may be, for example, a zinc oxide film; the material of the quantum dot light-emitting layer 23 is a quantum dot material; the material of the hole transport layer 24 may be, for example, TAPC/HAT-CN; the material of the hole injection layer 25 may be, for example, molybdenum trioxide (MoO) 3 ) (ii) a The material of the anode 26 may be, for example, silver (Ag).
In some embodiments, as shown in fig. 3, the heat dissipation portion includes a first heat conductive layer 43, the first heat conductive layer 43 is located on a side of the phase change material layer 42 away from the optoelectronic device 20, and the thermal conductivity of the first heat conductive layer 43 is higher than the thermal conductivity of the phase change material layer 42.
By providing the first heat conducting layer 43 on the side of the phase change material layer 42 remote from the optoelectronic device 20, the thermal conductivity of the first heat conducting layer 43 is higher than the thermal conductivity of the phase change material layer 42. When the heat generated by the device during operation is higher than the phase transition temperature of the thermal phase change material, the heat generated by the device can be directed through the phase change material layer 42-the first heat conducting layer 43 to dissipate heat away from the optoelectronic device 20. When the device does not work or the generated heat is continuously lower than the phase-change temperature of the thermal phase-change material, the heat released by the phase change of the phase-change material is also preferentially dissipated to the direction away from the optoelectronic device 20 through the first heat-conducting layer 43, so as to protect the optoelectronic device 20.
In order to obtain better heat dissipation effect, in some embodiments based on the above embodiments, as shown in fig. 4, the heat dissipation part further includes a second heat conduction layer 41, the second heat conduction layer 41 is located on a side of the phase change material layer 42 close to the optoelectronic device 20, the thermal conductivity of the second heat conduction layer 41 is lower than that of the first heat conduction layer 43, and the thermal conductivities of the first heat conduction layer 43 and the second heat conduction layer 41 are higher than that of the thermal phase change material layer 42.
By arranging the heat dissipation part into a structure of a second heat conduction layer 41-a phase change material layer 42-a first heat conduction layer 43 from bottom to top, the heat conductivity of the first heat conduction layer 43 is higher than that of the second heat conduction layer 41, and the heat conductivity of the first heat conduction layer 43 and the heat conductivity of the second heat conduction layer 41 are both higher than that of the phase change material layer 42. When the heat generated by the device during operation is higher than the phase change temperature of the thermal phase change material, the thermal phase change material absorbs the heat generated by the device through phase change, so that the over-high temperature of the device is avoided; when the heat generated by the device is continuously higher than the phase-change temperature of the thermal phase-change material, the heat generated by the device can be directed to dissipate the heat away from the optoelectronic device 20 through the second heat conducting layer 41, the phase-change material layer 42 and the first heat conducting layer 43 because the thermal phase-change material also has the property of heat conduction. When the device does not work or the generated heat is continuously lower than the phase-change temperature of the thermal phase-change material, the heat released by the phase-change material in the reverse phase-change mode is dissipated to the direction far away from the photoelectric device 20 through the first heat conduction layer 43, so that the photoelectric device 20 is protected, and the heat dissipation effect of the photoelectric device 20 is remarkably improved.
In the present application, "thermal conductivity" has a meaning known in the art, and is understood to mean "thermal conductivity" or "thermal conductivity" in units of watts/meter · degree W/(m · K), which is the temperature difference between two side surfaces of a 1m thick material at a constant heat transfer rate of 1 degree (K, deg.c) and the amount of heat transferred through a 1 square meter area over a certain period of time. The thermal conductivity of the materials herein can be that of known materials recognized in the art or measured according to methods such as ASTM D5470 or ISO22007-2, 2015, and the like, as long as the thermal conductivity measured by either method is within the ranges defined herein, can be used for the purposes of the present application.
In some embodiments, the material of the first thermally conductive layer 43 and the material of the second thermally conductive layer 41 are each independently at least one selected from the group consisting of a metal, an inorganic insulating material, an organic insulating material, and a two-dimensional material. That is, the material of the first heat conduction layer 43 is at least one selected from a metal, an inorganic insulating material, an organic insulating material, and a two-dimensional material, and the material of the second heat conduction layer 41 is at least one selected from a metal, an inorganic insulating material, an organic insulating material, and a two-dimensional material. The metal material includes, but is not limited to, silver (Ag), gold (Au), copper (Cu), aluminum (Al), etc., the inorganic insulating material includes, but is not limited to, aluminum oxide, silicon nitride, aluminum nitride, etc., the organic insulating material includes, but is not limited to, silicon gel, and the two-dimensional material includes graphene, boron nitride, etc.
Wherein the thermal conductivity of the material of the first heat conducting layer 43 is higher than the thermal conductivity of the material of the second heat conducting layer 41.
For example: in this application embodiment, when the first heat-conducting layer 43 material is graphite alkene, the material of second heat-conducting layer 41 is heat conduction silica gel, and graphite alkene and silica gel all have good luminousness and the coefficient of heat conductivity of graphite alkene is greater than silica gel.
In another embodiment of the present application, when the material of the first heat conducting layer 43 is silver with a thickness of 25nm, and the material of the second heat conducting layer 41 is silver with a thickness of 5nm, silver has a good light transmittance in addition to an excellent heat conducting property under a thinner condition.
In embodiments of the present application, the heat dissipation portion has a thickness less than the thickness of the organic encapsulation layer 30, and in some embodiments, the thickness of the organic encapsulation layer 30 is 15nm (nanometers) to 2 μm (micrometers).
In some embodiments, the thickness of the first heat conducting layer 43 is 5nm to 800nm, if the first heat conducting layer 43 is too thin, the heat conducting performance of the whole heat dissipating portion is reduced, and if the first heat conducting layer 43 is too thick, the light transmittance is affected. It is understood that the thickness of the first heat conducting layer 43 may be any value in the range of 5nm to 800nm, for example: 5nm, 10nm, 20nm, 50nm, 100nm, 200nm, 500nm, 700nm, 800nm or other values not listed between 5nm and 800 nm.
In some embodiments, the thickness of the second heat conducting layer 41 is 5nm to 800nm, if the second heat conducting layer 41 is too thin, the heat conducting performance of the whole heat dissipating portion is reduced, and if the second heat conducting layer 41 is too thick, the light transmittance is affected. It is understood that the thickness of the second heat conducting layer 41 can be any value in the range of 5nm to 800nm, for example: 5nm, 10nm, 20nm, 50nm, 100nm, 200nm, 500nm, 700nm, 800nm or other values not listed between 5nm and 800 nm.
In some embodiments, the thickness of the phase change material layer 42 is 5nm to 1.9 μm, the thermal phase change material layer is an organic transparent thin film layer, and has good thermal conductivity and light transmittance, if the phase change material layer 42 is too thin, the heat dissipation effect of the heat dissipation portion is affected, and if the phase change material layer 42 is too thick, the effect of the organic encapsulation layer 30 as a planarization layer is affected, and the difficulty in embedding the heat dissipation portion into the organic encapsulation layer 30 is increased. It is understood that the thickness of the phase change material layer 42 may be any value within a range from 5nm to 1.9 μm, for example: 5nm, 10nm, 20nm, 50nm, 100nm, 200nm, 500nm, 700nm, 1 μm, 1.2 μm, 1.5 μm, 1.7 μm, 1.9 μm or other values not listed between 5nm and 1.9 μm.
In order to prevent the temperature from rising suddenly when the device starts to operate, which may affect the performance of the device, in one embodiment, the phase-change temperature of the phase-change material is lower than the operating temperature of the optoelectronic device 20.
To obtain a better heat dissipation effect, the orthographic projection of the optoelectronic device 20 (for example, the orthographic projection on the substrate 10, the optoelectronic device 20 being provided on the substrate 10) is located within the range of the orthographic projection of the heat dissipation part, and in some embodiments, the orthographic projection of the heat dissipation part completely covers the orthographic projection of the optoelectronic device 20.
In order to enhance the water and oxygen barrier capability of the package structure, in some embodiments, the package structure further includes one or more inorganic encapsulation layers 50, when the inorganic encapsulation layer 50 is a single layer, as shown in fig. 1, the inorganic encapsulation layer 50 is located on the side of the organic encapsulation layer 30 away from the optoelectronic device 20, when the inorganic encapsulation layer 50 is a plurality of layers, the inorganic encapsulation layer 50 and the organic encapsulation layer 30 are alternately stacked, and at least one organic encapsulation layer 30 directly contacts the optoelectronic device 20.
When the inorganic encapsulation layers 50 are alternately stacked with the organic encapsulation layers 30, in some embodiments, the heat dissipation part is disposed in the organic encapsulation layer 30 directly contacting the photoelectric device 20, and thus has a good heat dissipation effect due to direct contact with the photoelectric device 20. In other embodiments, the heat dissipation part is disposed in the organic encapsulation layer 30 that is not in direct contact with the optoelectronic device 20, and the heat dissipation part can still dissipate heat because heat can be transferred to the heat dissipation part through the inorganic encapsulation layer 50.
The inorganic encapsulation layer 50 material includes, but is not limited to, non-metal oxides, nitrides, and metal materials such as silicon oxide, aluminum oxide, titanium oxide, zirconium oxide, silicon nitride, aluminum nitride, boron nitride, titanium nitride, silver, magnesium, copper, or aluminum.
As shown in fig. 5 and 6, an embodiment of the present application further provides a packaging method, including:
s10, depositing an organic encapsulation layer on the optoelectronic device 20 to be encapsulated for the first time.
S20, arranging a mold 60 in an area on the organic packaging layer deposited for the first time, and continuing to deposit the organic packaging layer for the second time on the organic packaging layer deposited for the first time around the area where the mold 60 is located.
And S30, removing the mold 60, and depositing a heat dissipation part in an area where the mold 60 is located, wherein the heat dissipation part comprises a phase change material layer 42.
In some embodiments, the phase change material layer 42 has phase variability when the photovoltaic device 20 generates heat.
In some embodiments, the mold 60 is removed by photolithography, chemical etching, or physical etching.
In some embodiments, the heat dissipating portion further comprises a first heat conducting layer, and the removing the mold and depositing the heat dissipating portion in the area where the mold 60 is located comprises:
removing the mold, and sequentially depositing a phase change material layer 42 and a first heat conduction layer in the original region of the mold from bottom to top;
in some embodiments, the heat dissipating portion further includes a second heat conducting layer, and the removing the mold 60 and depositing the heat dissipating portion in the area where the mold 60 is originally located includes: and removing the mold 60, and sequentially depositing a second heat conduction layer, a phase change material layer 42 and a first heat conduction layer in the original area of the mold 60 from bottom to top.
And S40, continuously depositing an organic packaging layer for the third time above the organic packaging layer deposited for the second time and the heat dissipation part to obtain the organic packaging layer 30 embedded with the heat dissipation part.
In the present application, the method for depositing each film layer on the optoelectronic device 20 can be implemented by methods known in the art, such as chemical methods and physical methods, wherein the chemical methods include: chemical vapor deposition, continuous ionic layer adsorption and reaction, anodic oxidation, electrolytic deposition, and coprecipitation. The physical methods include physical coating methods and solution processing methods. The physical coating method comprises the following steps: thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion coating, physical vapor deposition, atomic layer deposition, pulsed laser deposition, and the like. The solution processing method includes spin coating, printing, ink jet printing, blade coating, printing, dip-draw, dipping, spray coating, roll coating, casting, slit coating, and bar coating.
For example: in an embodiment of the present application, the organic encapsulation layer 30 is prepared by an inkjet printing method in a solution method, and the inkjet printing method mainly uses an inkjet printing apparatus to prepare the organic encapsulation layer 30, and the method mainly filters a solution of an organic encapsulation material, installs the solution in an ink cartridge of the inkjet printing apparatus, and drops ink in a predetermined area by an alignment mark after adjusting parameters such as printing voltage, air pressure, waveform, and the like to form the organic encapsulation layer 30. In the application, each functional layer is prepared by an ink-jet printing method, and the method can greatly reduce the production cost and is used for large-scale production.
In another embodiment of the present application, the organic encapsulation layer 30 is prepared by a spin coating method in a solution method, in this application, the preparation of the organic encapsulation layer 30 by the spin coating method requires first preparing an organic encapsulation material solution, placing a wafer to be spin-coated on a spin coater, dropping the prepared organic encapsulation solution above the spin coater, performing spin coating at a preset rotation speed, and completing the preparation of the organic encapsulation layer 30 after heat treatment. The spin-coating method has the characteristics of mild process conditions, simplicity in operation, energy conservation, environmental friendliness and the like, and the prepared photoelectric device 20 has the advantages of high carrier mobility, accurate thickness and the like.
The solution method is a method commonly used for depositing a film layer in the field, the heat dissipation part is arranged in the organic packaging layer 30 in an embedded mode in the embodiment of the application, and the organic packaging layer is formed three times and is respectively prepared with the heat dissipation part in the preparation process, so that the characteristics of the material of the organic packaging layer cannot be changed, and the problem that the viscosity of the solution of the organic packaging material is changed due to the mixing of the phase change material and the material of the organic packaging layer 30 to influence the feasibility of the solution method manufacturing process is avoided.
For parts of the present application that are not detailed in various embodiments of the method for manufacturing the package structure, please refer to the related description of the present application about the package structure.
Based on the same concept, the present application further provides a display device, which includes the optoelectronic device 20 and the package structure described in the above embodiment, or includes the optoelectronic device 20 and the package structure prepared by the method described in the above embodiment, and the structure, implementation principle and effect thereof are similar, and are not described herein again.
The display device may be: the lighting lamp and the backlight source are used, or any product or component with a display function such as a mobile phone, a tablet personal computer, a television, a display, a notebook computer, a digital photo frame and a navigator is used.
The foregoing detailed description is directed to a package structure, a package method, and a display device provided in the embodiments of the present application, and specific examples are applied in the description to explain the principles and implementations of the present application, and the description of the foregoing embodiments is only used to help understand the method and the core idea of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
Claims (14)
1. An encapsulation structure for encapsulating an optoelectronic device, comprising: the photoelectric device comprises at least one organic packaging layer covering the photoelectric device, wherein a heat dissipation part is embedded in the organic packaging layer and comprises a phase change material layer.
2. The package structure of claim 1,
the heat dissipation part further comprises a first heat conduction layer, the first heat conduction layer is located on one side, away from the photoelectric device, of the phase-change material layer, and the heat conductivity of the first heat conduction layer is higher than that of the phase-change material layer.
3. The package structure of claim 2, wherein the heat dissipation portion further comprises a second thermally conductive layer located on a side of the phase change material layer proximate to the optoelectronic device, the second thermally conductive layer having a thermal conductivity lower than a thermal conductivity of the first thermally conductive layer, and the second thermally conductive layer having a thermal conductivity higher than a thermal conductivity of the phase change material layer.
4. The package structure of claim 3,
the first heat-conducting layer is made of at least one of metal, inorganic insulating material, organic insulating material and two-dimensional material; and/or the presence of a gas in the gas,
the second heat conducting layer is made of at least one of metal, inorganic insulating material, organic insulating material and two-dimensional material.
5. The package structure of claim 3, wherein the heat dissipation portion has a thickness less than a thickness of the organic encapsulation layer, and/or,
the organic encapsulation layer has a thickness of 15nm to 2 μm, and/or,
the first thermally conductive layer has a thickness of 5nm to 800nm, and/or,
the second thermally conductive layer has a thickness of 5nm to 800nm, and/or,
the thickness of the phase change material layer is 5nm to 1.9 μm.
6. The package structure of claim 1, wherein the phase change material layer has a phase variability when the optoelectronic device generates heat, the phase change material of the phase change material layer being selected from at least one of a solid-liquid phase change material and a solid-solid phase change material.
7. The package structure of claim 1, wherein the phase change material of the phase change material layer is selected from at least one of aliphatic hydrocarbons, fatty acids, and polyols.
8. The package structure of claim 1, wherein a phase transition temperature of the phase change material layer is lower than an operating temperature of the optoelectronic device.
9. The package structure of claim 1, wherein an orthographic projection of the heat sink portion covers an orthographic projection of the optoelectronic device.
10. The package structure according to claim 1, further comprising at least one inorganic encapsulation layer, wherein the inorganic encapsulation layer and the organic encapsulation layer are alternately stacked, and wherein at least one organic encapsulation layer is in direct contact with the optoelectronic device.
11. A method of packaging an optoelectronic device, comprising:
depositing an organic packaging layer on a photoelectric device to be packaged for the first time;
arranging a mold in an area on the organic packaging layer deposited for the first time, and continuously depositing the organic packaging layer for the second time on the organic packaging layer deposited for the first time around the area where the mold is located;
removing the mold, and depositing a heat dissipation part in the original area of the mold; and
continuously depositing an organic packaging layer for the third time above the organic packaging layer deposited for the second time and the heat dissipation part to obtain the organic packaging layer embedded with the heat dissipation part;
wherein the heat dissipation part comprises a phase change material layer.
12. The method of claim 11, wherein the heat sink portion further comprises a first thermally conductive layer, and wherein removing the mold and depositing the heat sink portion in an area of the mold comprises:
and removing the die, and sequentially depositing the phase change material layer and the first heat conduction layer in the original region of the die from bottom to top.
13. The method of packaging of claim 12, wherein the heat sink member further comprises a second thermally conductive layer, and wherein removing the mold and depositing the heat sink member in the area of the mold comprises: and removing the die, and sequentially depositing the second heat conduction layer, the phase change material layer and the first heat conduction layer in the original region of the die from bottom to top.
14. A display device comprising an optoelectronic device and the encapsulation structure of any one of claims 1 to 10, or comprising an optoelectronic device and an encapsulation structure prepared by the method of any one of claims 11 to 13.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111142964.6A CN115911138A (en) | 2021-09-28 | 2021-09-28 | Packaging structure, packaging method and display device |
| PCT/CN2022/119609 WO2023051301A1 (en) | 2021-09-28 | 2022-09-19 | Packaging structure, packaging method and display apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111142964.6A CN115911138A (en) | 2021-09-28 | 2021-09-28 | Packaging structure, packaging method and display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115911138A true CN115911138A (en) | 2023-04-04 |
Family
ID=85741144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111142964.6A Pending CN115911138A (en) | 2021-09-28 | 2021-09-28 | Packaging structure, packaging method and display device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN115911138A (en) |
| WO (1) | WO2023051301A1 (en) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102422432A (en) * | 2009-05-14 | 2012-04-18 | 马迪可公司 | Heat dissipating protective sheets and encapsulant for photovoltaic modules |
| KR101800437B1 (en) * | 2011-05-02 | 2017-11-22 | 삼성전자주식회사 | Semiconductor Package |
| CN105895721A (en) * | 2016-04-29 | 2016-08-24 | 晶澳太阳能有限公司 | Double-side solar cell module |
| CN106972113B (en) * | 2017-05-25 | 2018-09-11 | 深圳市华星光电技术有限公司 | The package assembling and packaging method of OLED device, display device |
| CN108365034B (en) * | 2018-01-19 | 2020-07-31 | 合肥晶澳太阳能科技有限公司 | Heat dissipation layer containing phase-change material, preparation method of heat dissipation layer and solar photovoltaic module |
| US10700036B2 (en) * | 2018-10-19 | 2020-06-30 | Toyota Motor Engineering & Manufacturing North America, Inc. | Encapsulated stress mitigation layer and power electronic assemblies incorporating the same |
| CN210075901U (en) * | 2019-05-07 | 2020-02-14 | 河南烯力新材料科技有限公司 | Heat dissipation structure and electronic device |
| CN110265574A (en) * | 2019-06-25 | 2019-09-20 | 京东方科技集团股份有限公司 | Thin-film packing structure and preparation method thereof, component, display panel and device |
-
2021
- 2021-09-28 CN CN202111142964.6A patent/CN115911138A/en active Pending
-
2022
- 2022-09-19 WO PCT/CN2022/119609 patent/WO2023051301A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023051301A1 (en) | 2023-04-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103931010B (en) | Organic luminescent device | |
| US8102060B2 (en) | Electrically conducting connection with insulating connection medium | |
| KR100662297B1 (en) | Organic electroluminescence device | |
| US20090152583A1 (en) | Light-emitting diode device and manufacturing method thereof | |
| CN108598278B (en) | Organic light emitting diode packaging structure and preparation method thereof | |
| CN215814101U (en) | Device comprising an image sensor and a display screen | |
| US20140034981A1 (en) | Light emitting diode structure | |
| US8608323B2 (en) | Barrier layer and a method of manufacturing the barrier layer | |
| TW565935B (en) | Electronic devices containing organic semiconductor materials | |
| US20180342698A1 (en) | Oled device packaging component, packaging method and display device thereof | |
| KR20150055627A (en) | Optoelectronic component and method for producing an optoelectronic component | |
| JP2013206883A (en) | Plurality of optical management texture | |
| US12048191B2 (en) | Organic optoelectronic component | |
| CN104205402A (en) | Opto-electric device and method for manufacturing the same | |
| CN115911138A (en) | Packaging structure, packaging method and display device | |
| KR101961006B1 (en) | Perovskite light emitting device | |
| US8426239B2 (en) | Method of manufacturing lacquer using inkjet printing | |
| US20180198087A1 (en) | Organic light-emitting component and method for producing an organic light-emitting component | |
| CN115425120B (en) | Method for manufacturing display panel | |
| US20130181241A1 (en) | Method of molding structures in a plastic substrate | |
| KR20200005237A (en) | Micro led transfer head and micro led transfer system using the same | |
| CN110518154B (en) | Packaging method, thin film packaging structure and display device | |
| KR100782465B1 (en) | Donor Substrate for Laser Induced Thermal Imaging and Fabrication methode for Organic Electroluminescence Display Device using the same | |
| CN101449368A (en) | Electrically conducting connection with insulating connection medium | |
| KR101956419B1 (en) | Organic light emitting diode and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |