WO2020251637A1 - Dispositif de mémoire tridimensionnel comprenant des trajets de courant rétrécis et leurs procédés de fabrication - Google Patents

Dispositif de mémoire tridimensionnel comprenant des trajets de courant rétrécis et leurs procédés de fabrication Download PDF

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Publication number
WO2020251637A1
WO2020251637A1 PCT/US2020/021868 US2020021868W WO2020251637A1 WO 2020251637 A1 WO2020251637 A1 WO 2020251637A1 US 2020021868 W US2020021868 W US 2020021868W WO 2020251637 A1 WO2020251637 A1 WO 2020251637A1
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WIPO (PCT)
Prior art keywords
memory
layer
insulating
electrically conductive
layers
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PCT/US2020/021868
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English (en)
Inventor
Yuji Takahashi
Masatoshi Nishikawa
Wei Kuo Shih
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Western Digital Technologies, Inc
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Publication date
Priority claimed from US16/440,378 external-priority patent/US10964752B2/en
Priority claimed from US16/440,250 external-priority patent/US11043537B2/en
Application filed by Western Digital Technologies, Inc filed Critical Western Digital Technologies, Inc
Priority to KR1020217018481A priority Critical patent/KR102532156B1/ko
Publication of WO2020251637A1 publication Critical patent/WO2020251637A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H10B63/845—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays the switching components being connected to a common vertical conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Definitions

  • the present disclosure relates generally to the field of semiconductor devices, and particular to a three-dimensional phase change memory device containing vertically constricted current paths and methods of manufacturing the same.
  • a phase change material (PCM) memory device (also known as a phase change random access memory“PCRAM” or“PRAM”) is a type of non-volatile memory device that stores information as a resistivity state of a material that can be in different resistivity states corresponding to different phases of the material.
  • the different phases can include an amorphous state having high resistivity and a crystalline state having low resistivity (i.e., a lower resistivity than in the amorphous state).
  • the transition between the amorphous state and the crystalline state can be induced by controlling the rate of cooling after application of an electrical pulse that renders the phase change material amorphous in a first part of a programming process.
  • the second part of the programming process includes control of the cooling rate of the phase change material. If rapid quenching occurs, the phase change material can cool into an amorphous high resistivity state. If slow cooling occurs, the phase change material can cool into a crystalline low resistivity state.
  • a three-dimensional memory device comprises an alternating stack of insulating layers and electrically conductive layers located over a substrate, and memory openings extending through the alternating stack and filled within a respective memory opening fill structure.
  • Each memory opening fill structure comprises a vertical bit line and a vertical stack of discrete phase change memory material portions; and each of the discrete phase change memory material portions in the vertical stack is located between a respective vertically neighboring pair of the insulating layers within the alternating stack and has a vertical thickness that is less than a vertical thickness of a respective electrically conductive layer located between the respective vertically neighboring pair of the insulating layers within the alternating stack.
  • a three-dimensional memory device comprises an alternating stack of insulating layers and electrically conductive layers located over a substrate, and memory openings extending through the alternating stack and filled within a respective memory opening fill structure.
  • Each memory opening fill structure comprises a vertical bit line and phase change memory material laterally surrounding the vertical bit line, and each of the electrically conductive layers within the alternating stack comprises a word line containing a matrix portion located between neighboring pairs of memory openings, and a plurality of protruding portions that protrude toward, and laterally surround, a respective one of the memory openings.
  • a method of forming a three-dimensional memory device comprises: forming an alternating stack of insulating layers and sacrificial material layers over a substrate; forming memory openings through the alternating stack; forming protruding tip portions on each of the sacrificial material layers around the memory openings; forming a plurality of insulating spacers within each memory opening between each vertically neighboring pair of tip portions of the sacrificial material layers on a respective one of the insulating layers; depositing a phase change memory material and a vertical bit line within each of the memory openings; and replacing each of the sacrificial material layer with an electrically conductive layer.
  • a three-dimensional memory device comprises vertically alternating stacks of insulating strips and electrically conductive strips that overlie a substrate and are laterally spaced from each other by line trenches that laterally extend along a first horizontal direction, and laterally alternating sequences of memory opening fill structures and dielectric pillar structures located within a respective one of the line trenches.
  • Each memory opening fill structure comprising a respective vertical bit line and a memory material portion, and the memory material portion is located between the vertical bit line and a respective electrically conductive strip.
  • the insulating strips and the electrically conductive strips laterally extend along the first horizontal direction and the vertically alternating stacks are laterally spaced apart along a second horizontal direction that is perpendicular to the first horizonal direction.
  • a lateral extent of an overlap between the memory material portion and a most proximal one of the electrically conductive strips along the first horizontal direction is less than a lateral extent along the first horizontal direction of the memory opening fill structure containing the memory material portion.
  • a method of forming a three-dimensional memory device comprises: forming an vertically alternating sequence of insulating layers and sacrificial material layers over a substrate; forming line trenches extending along a first horizontal direction through the vertically alternating sequence, wherein the vertically alternating sequence is divided into vertically alternating stacks of insulating strips and sacrificial material strips that are laterally spaced apart along a second horizontal direction; forming laterally alternating sequences of memory opening fill structures and dielectric pillar structures within the line trenches, wherein each of the memory opening fill structures comprises a vertical bit line and a memory material portion located between each laterally neighboring pair of a sacrificial material strip and the vertical bit line, wherein a lateral extent of an overlap between the memory material portion and a most proximal one of the sacrificial material strips along the first horizontal direction is less than a lateral extent along the first horizontal direction of the memory opening fill structure containing the
  • FIG. 1 is a schematic vertical cross-sectional view of an first exemplary structure after formation of at least one peripheral device and a insulating material layer according to an embodiment of the present disclosure.
  • FIG. 2 is a schematic vertical cross-sectional view of the first exemplary structure after formation of an alternating stack of insulating layers and sacrificial material layers according to an embodiment of the present disclosure.
  • FIG. 3 is a schematic vertical cross-sectional view of the first exemplary structure after formation of stepped terraces and a retro-stepped dielectric material portion according to an embodiment of the present disclosure.
  • FIG. 4A is a schematic vertical cross-sectional view of the first exemplary structure after formation of memory openings and support openings according to an embodiment of the present disclosure.
  • FIG. 4B is a top-down view of the first exemplary structure of FIG. 4A.
  • the vertical plane A - A’ is the plane of the cross-section for FIG. 4A.
  • FIGS. 5 A - 5G are sequential schematic vertical cross-sectional views of a memory opening within the first exemplary structure during formation of a memory opening fill structure in a first configuration according to an embodiment of the present disclosure.
  • FIGS. 6 A - 6E are sequential schematic vertical cross-sectional views of a memory opening within the first exemplary structure during formation of a memory opening fill structure in a second configuration according to an embodiment of the present disclosure.
  • FIGS. 7 A - 7G are sequential schematic vertical cross-sectional views of a memory opening within the first exemplary structure during formation of a memory opening fill structure in a third configuration according to an embodiment of the present disclosure.
  • FIG. 8 is a schematic vertical cross-sectional view of the first exemplary structure after formation of memory opening fill structures and support pillar structures according to an embodiment of the present disclosure.
  • FIG. 9A is a schematic vertical cross-sectional view of the first exemplary structure after formation of backside trenches according to an embodiment of the present disclosure.
  • FIG. 9B is a partial see-through top-down view of the first exemplary structure of FIG. 9A.
  • the vertical plane A - A’ is the plane of the schematic vertical cross-sectional view of FIG. 9A.
  • FIG. 10 is a schematic vertical cross-sectional view of the first exemplary structure after formation of backside recesses according to an embodiment of the present disclosure.
  • FIGS. 11A and 1 IB are sequential vertical cross-sectional views of a region around a memory opening fill structure in the first configuration during formation of electrically conductive layers according to an embodiment of the present disclosure.
  • FIGS. 12A and 12B are sequential vertical cross-sectional views of a region around a memory opening fill structure in the second configuration during formation of electrically conductive layers according to an embodiment of the present disclosure.
  • FIGS. 13A and 13B are sequential vertical cross-sectional views of a region around a memory opening fill structure in the third configuration during formation of electrically conductive layers according to an embodiment of the present disclosure.
  • FIG. 14 is a schematic vertical cross-sectional view of the first exemplary structure at the processing step of FIG. 11B, 12B, or 13B.
  • FIG. 15A is a schematic vertical cross-sectional view of the first exemplary structure after removal of a deposited conductive material from within the backside trench according to an embodiment of the present disclosure.
  • FIG. 15B is a partial see-through top-down view of the first exemplary structure of FIG. 15 A.
  • the vertical plane A - A’ is the plane of the schematic vertical cross-sectional view of FIG. 15A.
  • FIG. 16 is a schematic vertical cross-sectional view of the first exemplary structure after formation of backside trench fill structures according to an embodiment of the present disclosure.
  • FIG. 17A is a schematic vertical cross-sectional view of the first exemplary structure after formation of contact via structures according to an embodiment of the present disclosure.
  • FIG. 17B is a top-down view of the first exemplary structure of FIG. 17A.
  • the vertical plane A - A’ is the plane of the schematic vertical cross-sectional view of FIG. 17A.
  • FIGS. 18A - 18D are sequential schematic vertical cross-sectional views of steps in a method of making an first exemplary structure according to another embodiment of the present disclosure.
  • FIG. 19 is a schematic vertical cross-sectional view of the second exemplary structure after formation of a vertically alternating sequence of insulating layers and sacrificial material layers according to an embodiment of the present disclosure.
  • FIG. 20 is a schematic vertical cross-sectional view of the second exemplary structure after formation of stepped terraces and a retro-stepped dielectric material portion according to an embodiment of the present disclosure.
  • FIG. 21A is a schematic vertical cross-sectional view of the second exemplary structure after formation of line trenches according to an embodiment of the present disclosure.
  • FIG. 21B is a top-down view of the second exemplary structure of FIG. 21 A.
  • the vertical plane A - A’ is the plane of the cross-section for FIG. 21 A.
  • FIG. 21C is a horizontal cross-sectional view of a region of the second exemplary structure along the horizontal plane C - C’ of FIG. 21 A.
  • FIG. 21D is a horizontal cross-sectional view of a region of the second exemplary structure along the horizontal plane D - D’ of FIG. 21 A.
  • FIG. 22A is a first horizontal cross-sectional view of a region of the second exemplary structure after formation of a sacrificial rail structure within each line trench according to an embodiment of the present disclosure.
  • FIG. 22B is a second horizontal cross-sectional view of a region of the second exemplary structure after formation of a sacrificial rail structure within each line trench according to an embodiment of the present disclosure.
  • FIG. 23A is a schematic vertical cross-sectional view of the second exemplary structure after formation of sacrificial pillar structures and via cavities in the line trenches according to an embodiment of the present disclosure.
  • FIG. 23B is a top-down view of the second exemplary structure of FIG. 23 A.
  • the vertical plane A - A’ is the plane of the cross-section for FIG. 23A.
  • FIG. 23C is a horizontal cross-sectional view of a region of the second exemplary structure along the horizontal plane C - C’ of FIG. 23A.
  • FIG. 23D is a horizontal cross-sectional view of a region of the second exemplary structure along the horizontal plane D - D’ of FIG. 23 A.
  • FIG. 24A is a first horizontal cross-sectional view of a region of the second exemplary structure after laterally recessing sacrificial material strips around each via cavity according to an embodiment of the present disclosure.
  • FIG. 24B is a second horizontal cross-sectional view of a region of the second exemplary structure after laterally recessing sacrificial material layers around each via cavity according to an embodiment of the present disclosure.
  • FIG. 25A is a first horizontal cross-sectional view of a region of the second exemplary structure after formation of dielectric pillar structures in the via cavities according to an embodiment of the present disclosure.
  • FIG. 25B is a second horizontal cross-sectional view of a region of the second exemplary structure after formation of dielectric pillar structures in the via cavities according to an embodiment of the present disclosure.
  • FIG. 26A is a first horizontal cross-sectional view of a region of the second exemplary structure after formation of rectangular memory openings by removal of the sacrificial pillar structures according to an embodiment of the present disclosure.
  • FIG. 26B is a second horizontal cross-sectional view of a region of the second exemplary structure after formation of rectangular memory openings by removal of the sacrificial pillar structures according to an embodiment of the present disclosure.
  • FIG. 27A is a first horizontal cross-sectional view of a region of the second exemplary structure after formation of memory opening fill structures rectangular memory openings by removal of the sacrificial pillar structures according to an embodiment of the present disclosure.
  • FIG. 27B is a second horizontal cross-sectional view of a region of the second exemplary structure after formation of memory opening fill structures rectangular memory openings by removal of the sacrificial pillar structures according to an embodiment of the present disclosure.
  • FIG. 27C is a vertical cross-sectional view of a region of the second exemplary structure along the vertical plane C - C’ of FIGS. 27A and 27B.
  • FIG. 28A is a schematic vertical cross-sectional view of the second exemplary structure after formation of backside openings according to an embodiment of the present disclosure.
  • FIG. 28B is a partial see-through top-down view of the second exemplary structure of FIG. 28A.
  • the vertical plane A - A’ is the plane of the schematic vertical cross- sectional view of FIG. 28A.
  • FIG. 29A is a schematic vertical cross-sectional view of the second exemplary structure after formation of backside recesses according to an embodiment of the present disclosure.
  • FIG. 29B is a partial see-through top-down view of the second exemplary structure of FIG. 29A.
  • the vertical plane A - A’ is the plane of the schematic vertical cross- sectional view of FIG. 29A.
  • FIG. 29C is a vertical cross-sectional view of the second exemplary structure along the vertical plane C - C’ of FIG. 29B.
  • FIG. 30A is a first horizontal cross-sectional view of a region of the second exemplary structure after formation of a barrier dielectric layer and an electrically conductive strip within each backside recess according to an embodiment of the present disclosure.
  • FIG. 30B is a second horizontal cross-sectional view of a region of the second exemplary structure after formation of a barrier dielectric layer and an electrically conductive strip within each backside recess according to an embodiment of the present disclosure.
  • FIG. 30C is a vertical cross-sectional view of the second exemplary structure along the vertical plane C - C’ of FIGS. 30A and 30B.
  • FIG. 30D is a vertical cross-sectional view of the second exemplary structure along the vertical plane D - D’ of FIGS. 30A and 30B.
  • FIG. 30E is a vertical cross-sectional view of the second exemplary structure of FIGS. 30A - 30D.
  • FIG. 30F is a vertical cross-sectional view of the second exemplary structure of FIGS. 30A - 30E.
  • FIG. 31 A is a schematic vertical cross-sectional view of the exemplary structure after formation of backside dielectric fill structures and bit lines according to an embodiment of the present disclosure.
  • FIG. 3 IB is a partial see-through top-down view of the exemplary structure of FIG. 31 A.
  • the vertical plane A - A’ is the plane of the schematic vertical cross-sectional view of FIG. 31 A.
  • FIG. 32A is a first horizontal cross-sectional view of a region of a third exemplary structure after formation of dielectric pillar structures according to an embodiment of the present disclosure.
  • FIG. 32B is a second first horizontal cross-sectional view of a region of the third exemplary structure after formation of dielectric pillar structures according to an embodiment of the present disclosure.
  • FIG. 33A is a first horizontal cross-sectional view of a region of the third exemplary structure after formation of rectangular memory openings according to an embodiment of the present disclosure.
  • FIG. 33B is a second first horizontal cross-sectional view of a region of the third exemplary structure after formation of rectangular memory openings according to an embodiment of the present disclosure.
  • FIG. 34A is a first horizontal cross-sectional view of a region of the third exemplary structure after formation of lateral recesses according to an embodiment of the present disclosure.
  • FIG. 34B is a second first horizontal cross-sectional view of a region of the third exemplary structure after formation of lateral recesses according to an embodiment of the present disclosure.
  • FIG. 35A is a first horizontal cross-sectional view of a region of the third exemplary structure after deposition of a memory material layer according to an embodiment of the present disclosure.
  • FIG. 35B is a second first horizontal cross-sectional view of a region of the third exemplary structure after deposition of the memory material layer according to an embodiment of the present disclosure.
  • FIG. 36A is a first horizontal cross-sectional view of a region of the third exemplary structure after formation of memory material portions according to an
  • FIG. 36B is a second first horizontal cross-sectional view of a region of the third exemplary structure after formation of memory material portions according to an
  • FIG. 37A is a first horizontal cross-sectional view of a region of the third exemplary structure after formation of memory opening fill structures according to an embodiment of the present disclosure.
  • FIG. 37B is a second first horizontal cross-sectional view of a region of the third exemplary structure after formation of memory opening fill structures according to an embodiment of the present disclosure.
  • FIG. 38A is a first horizontal cross-sectional view of a region of the third exemplary structure after replacement of sacrificial material strips with electrically conductive strips according to an embodiment of the present disclosure.
  • FIG. 38B is a second first horizontal cross-sectional view of a region of the third exemplary structure after replacement of sacrificial material strips with electrically conductive strips according to an embodiment of the present disclosure.
  • FIG. 38C is a vertical cross-sectional view of the second exemplary structure along the vertical plane C - C’ of FIGS. 38A and 38B.
  • FIG. 38D is a vertical cross-sectional view of the second exemplary structure along the vertical plane D - D’ of FIGS. 38 A and 38B.
  • FIG. 39A is a first horizontal cross-sectional view of a region of a fourth exemplary structure after formation of dielectric pillar structures according to an embodiment of the present disclosure.
  • FIG. 39B is a second horizontal cross-sectional view of a region of the fourth exemplary structure after formation of dielectric pillar structures according to an embodiment of the present disclosure.
  • FIG. 40A is a first horizontal cross-sectional view of a region of the fourth exemplary structure after formation of rectangular memory openings according to an embodiment of the present disclosure.
  • FIG. 40B is a second horizontal cross-sectional view of a region of the fourth exemplary structure after formation of rectangular memory openings according to an embodiment of the present disclosure.
  • FIG. 41 A is a first horizontal cross-sectional view of a region of the fourth exemplary structure after formation of lateral recesses according to an embodiment of the present disclosure.
  • FIG. 41B is a second horizontal cross-sectional view of a region of the fourth exemplary structure after formation of lateral recesses according to an embodiment of the present disclosure.
  • FIG. 42A is a first horizontal cross-sectional view of a region of the fourth exemplary structure after deposition of a selector material layer and a memory material layer according to an embodiment of the present disclosure.
  • FIG. 42B is a second horizontal cross-sectional view of a region of the fourth exemplary structure after deposition of the selector material layer and the memory material layer according to an embodiment of the present disclosure.
  • FIG. 43A is a first horizontal cross-sectional view of a region of the fourth exemplary structure after formation of selector material portions and memory material portions according to an embodiment of the present disclosure.
  • FIG. 43B is a second horizontal cross-sectional view of a region of the fourth exemplary structure after formation of the selector material portions and the memory material portions according to an embodiment of the present disclosure.
  • FIG. 44A is a first horizontal cross-sectional view of a region of the fourth exemplary structure after formation of memory opening fill structures according to an embodiment of the present disclosure.
  • FIG. 44B is a second horizontal cross-sectional view of a region of the fourth exemplary structure after formation of memory opening fill structures according to an embodiment of the present disclosure.
  • FIG. 45A is a first horizontal cross-sectional view of a region of the fourth exemplary structure after replacement of sacrificial material strips with electrically conductive strips according to an embodiment of the present disclosure.
  • FIG. 45B is a second horizontal cross-sectional view of a region of the fourth exemplary structure after replacement of sacrificial material strips with electrically conductive strips according to an embodiment of the present disclosure.
  • FIG. 45C is a vertical cross-sectional view of the second exemplary structure along the vertical plane C - C’ of FIGS. 45A and 45B.
  • FIG. 45D is a vertical cross-sectional view of the second exemplary structure along the vertical plane D - D’ of FIGS. 45A and 45B.
  • the embodiments of the present disclosure are directed to three-dimensional phase change memory devices including vertically constricted current paths between the word lines and the phase change material in each memory cell and methods of manufacturing the same, and to three-dimensional phase change memory devices including laterally constricted current paths between the word lines and the phase change material in each memory cell and methods of manufacturing the same.
  • a first element located“on” a second element can be located on the exterior side of a surface of the second element or on the interior side of the second element.
  • a first element is located“directly on” a second element if there exist a physical contact between a surface of the first element and a surface of the second element.
  • a first element is“electrically connected to” a second element if there exists a conductive path consisting of at least one conductive material between the first element and the second element.
  • a“prototype” structure or an“in-process” structure refers to a transient structure that is subsequently modified in the shape or composition of at least one component therein.
  • a“layer” refers to a material portion including a region having a thickness.
  • a layer may extend over the entirety of an underlying or overlying structure, or may have an extent less than the extent of an underlying or overlying structure. Further, a layer may be a region of a homogeneous or inhomogeneous continuous structure that has a thickness less than the thickness of the continuous structure. For example, a layer may be located between any pair of horizontal planes between, or at, a top surface and a bottom surface of the continuous structure. A layer may extend horizontally, vertically, and/or along a tapered surface.
  • a substrate may be a layer, may include one or more layers therein, or may have one or more layer thereupon, thereabove, and/or therebelow.
  • a first surface and a second surface are“vertically coincident” with each other if the second surface overlies or underlies the first surface and there exists a vertical plane or a substantially vertical plane that includes the first surface and the second surface.
  • a substantially vertical plane is a plane that extends straight along a direction that deviates from a vertical direction by an angle less than 5 degrees.
  • a vertical plane or a substantially vertical plane is straight along a vertical direction or a substantially vertical direction, and may, or may not, include a curvature along a direction that is perpendicular to the vertical direction or the substantially vertical direction.
  • a monolithic three-dimensional memory array is a memory array in which multiple memory levels are formed above a single substrate, such as a semiconductor wafer, with no intervening substrates.
  • the term“monolithic” means that layers of each level of the array are directly deposited on the layers of each underlying level of the array.
  • two dimensional arrays may be formed separately and then packaged together to form a non- monolithic memory device.
  • non-monolithic stacked memories have been constructed by forming memory levels on separate substrates and vertically stacking the memory levels, as described in U.S. Patent No. 5,915,167 titled“Three-dimensional Structure Memory.” The substrates may be thinned or removed from the memory levels before bonding, but as the memory levels are initially formed over separate substrates, such memories are not true monolithic three-dimensional memory arrays.
  • the first exemplary structure includes a substrate 9.
  • the substrate can include a substrate semiconductor layer 9.
  • the substrate semiconductor layer 9 maybe a semiconductor wafer or a semiconductor material layer, and can include at least one elemental semiconductor material (e.g., single crystal silicon wafer or layer), at least one III- V compound semiconductor material, at least one II- VI compound semiconductor material, at least one organic semiconductor material, or other semiconductor materials known in the art.
  • the substrate can have a major surface 7, which can be, for example, a topmost surface of the substrate semiconductor layer 9.
  • the major surface 7 can be a semiconductor surface.
  • the major surface 7 can be a single crystalline semiconductor surface, such as a single crystalline semiconductor surface.
  • a“semiconducting material” refers to a material having electrical conductivity in the range from 1.0 x 10-5 S/m to 1.0 x 105 S/m.
  • a “semiconductor material” refers to a material having electrical conductivity in the range from 1.0 x 10-5 S/m to 1.0 S/m in the absence of electrical dopants therein, and is capable of producing a doped material having electrical conductivity in a range from 1.0 S/m to 1.0 x 105 S/m upon suitable doping with an electrical dopant.
  • an“electrical dopant” refers to a p-type dopant that adds a hole to a valence band within a band structure, or an n-type dopant that adds an electron to a conduction band within a band structure.
  • a“conductive material” refers to a material having electrical conductivity greater than 1.0 x 105 S/m.
  • an“insulator material” or a“dielectric material” refers to a material having electrical conductivity less than 1.0 x 10-5 S/m.
  • a“heavily doped semiconductor material” refers to a semiconductor material that is doped with electrical dopant at a sufficiently high atomic concentration to become a conductive material either as formed as a crystalline material or if converted into a crystalline material through an anneal process (for example, from an initial amorphous state), i.e., to have electrical conductivity greater than 1.0 x 105 S/m.
  • A“doped semiconductor material” may be a heavily doped semiconductor material, or may be a semiconductor material that includes electrical dopants (i.e., p-type dopants and/or n-type dopants) at a concentration that provides electrical conductivity in the range from 1.0 x 10-5 S/m to 1.0 x 105 S/m.
  • An“intrinsic semiconductor material” refers to a semiconductor material that is not doped with electrical dopants.
  • a semiconductor material may be semiconducting or conductive, and may be an intrinsic semiconductor material or a doped semiconductor material.
  • semiconductor material can be semiconducting or conductive depending on the atomic concentration of electrical dopants therein.
  • a“metallic material” refers to a conductive material including at least one metallic element therein. All measurements for electrical conductivities are made at the standard condition.
  • At least one semiconductor device 700 for a peripheral circuitry can be formed on a portion of the substrate semiconductor layer 9.
  • the at least one semiconductor device can include, for example, field effect transistors.
  • at least one shallow trench isolation structure 720 can be formed by etching portions of the substrate semiconductor layer 9 and depositing a dielectric material therein.
  • a gate dielectric layer, at least one gate conductor layer, and a gate cap dielectric layer can be formed over the substrate
  • At least one gate structure 750, 752, 754, 758, each of which can include a gate dielectric 750, a gate electrode (752, 754), and a gate cap dielectric 758.
  • the gate electrode (752, 754) may include a stack of a first gate electrode portion 752 and a second gate electrode portion 754.
  • At least one gate spacer 756 can be formed around the at least one gate structure (750, 752, 754, 758) by depositing and anisotropically etching a dielectric liner.
  • Active regions 730 can be formed in upper portions of the substrate semiconductor layer 9, for example, by introducing electrical dopants employing the at least one gate structure (750, 752, 754, 758) as masking structures.
  • the active region 730 can include source regions and drain regions of field effect transistors.
  • a first dielectric liner 761 and a second dielectric liner 762 can be optionally formed.
  • Each of the first and second dielectric liners (761, 762) can comprise a silicon oxide layer, a silicon nitride layer, and/or a dielectric metal oxide layer.
  • silicon oxide includes silicon dioxide as well as non- stoichiometric silicon oxides having more or less than two oxygen atoms for each silicon atoms. Silicon dioxide is preferred.
  • the first dielectric liner 761 can be a silicon oxide layer
  • the second dielectric liner 762 can be a silicon nitride layer.
  • the least one semiconductor device for the peripheral circuitry can contain a driver circuit for memory devices to be subsequently formed.
  • a dielectric material such as silicon oxide can be deposited over the at least one semiconductor device, and can be subsequently planarized to form a planarization dielectric layer 770.
  • the planarized top surface of the planarization dielectric layer 770 can be coplanar with a top surface of the dielectric liners (761, 762).
  • the planarization dielectric layer 770 and the dielectric liners (761, 762) can be removed from an area to physically expose a top surface of the substrate semiconductor layer 9.
  • a surface is“physically exposed” if the surface is in physical contact with vacuum, or a gas phase material (such as air).
  • An insulating material layer 10 is formed on the top surface of the substrate semiconductor layer 9 prior to, or after, formation of the at least one semiconductor device 700 by deposition of an insulating material, for example, by chemical vapor deposition.
  • the insulating material layer can be any insulating material, such as silicon oxide, and may have a thickness of 50 nm to 300 nm. Portions of the deposited insulating material located above the top surface of the planarization dielectric layer 770 can be removed, for example, by chemical mechanical planarization (CMP). In this case, the insulating material layer 10 can have a top surface that is coplanar with the top surface of the planarization dielectric layer 770.
  • CMP chemical mechanical planarization
  • the region (i.e., area) of the at least one semiconductor device 700 is herein referred to as a peripheral device region 200.
  • the region in which a memory array is subsequently formed is herein referred to as a memory array region 100.
  • a staircase region 300 for subsequently forming stepped terraces of electrically conductive layers can be provided between the memory array region 100 and the peripheral device region 200.
  • a stack of an alternating plurality of first material layers (which can be insulating layers 32) and second material layers (which can be sacrificial material layer 42) is formed over the top surface of the substrate 9.
  • a “material layer” refers to a layer including a material throughout the entirety thereof.
  • an alternating plurality of first elements and second elements refers to a structure in which instances of the first elements and instances of the second elements alternate. Each instance of the first elements that is not an end element of the alternating plurality is adjoined by two instances of the second elements on both sides, and each instance of the second elements that is not an end element of the alternating plurality is adjoined by two instances of the first elements on both ends.
  • the first elements may have the same thickness
  • the second elements may have the same thickness thereamongst, or may have different thicknesses.
  • the alternating plurality of first material layers and second material layers may begin with an instance of the first material layers or with an instance of the second material layers, and may end with an instance of the first material layers or with an instance of the second material layers.
  • an instance of the first elements and an instance of the second elements may form a unit that is repeated with periodicity within the alternating plurality.
  • Each first material layer includes a first material
  • each second material layer includes a second material that is different from the first material.
  • each first material layer can be an insulating layer 32
  • each second material layer can be a sacrificial material layer.
  • the stack can include an alternating plurality of insulating layers 32 and sacrificial material layers 42, and constitutes a prototype stack of alternating layers comprising insulating layers 32 and sacrificial material layers 42.
  • the stack of the alternating plurality is herein referred to as an alternating stack (32, 42).
  • the alternating stack (32, 42) can include insulating layers 32 composed of the first material, and sacrificial material layers 42 composed of a second material different from that of insulating layers 32.
  • the first material of the insulating layers 32 can be at least one insulating material.
  • each insulating layer 32 can be an insulating material layer.
  • Insulating materials that can be employed for the insulating layers 32 include, but are not limited to, silicon oxide (including doped or undoped silicate glass), silicon nitride, silicon oxynitride, organosilicate glass (OSG), spin-on dielectric materials, dielectric metal oxides that are commonly known as high dielectric constant (high-k) dielectric oxides (e.g., aluminum oxide, hafnium oxide, etc.) and silicates thereof, dielectric metal oxynitrides and silicates thereof, and organic insulating materials.
  • the first material of the insulating layers 32 can be silicon oxide.
  • the second material of the sacrificial material layers 42 is a sacrificial material that can be removed selective to the first material of the insulating layers 32.
  • a removal of a first material is“selective to” a second material if the removal process removes the first material at a rate that is at least twice the rate of removal of the second material.
  • the ratio of the rate of removal of the first material to the rate of removal of the second material is herein referred to as a“selectivity” of the removal process for the first material with respect to the second material.
  • the sacrificial material layers 42 may comprise an insulating material, a semiconductor material, or a conductive material.
  • the second material of the sacrificial material layers 42 can be subsequently replaced with electrically conductive electrodes which can function, for example, as word lines.
  • Non-limiting examples of the second material include silicon nitride, an amorphous semiconductor material (such as amorphous silicon), and a polycrystalline semiconductor material (such as polysilicon).
  • the sacrificial material layers 42 can be spacer material layers that comprise silicon nitride or a semiconductor material including at least one of silicon and germanium.
  • the insulating layers 32 can include silicon oxide, and sacrificial material layers can include silicon nitride sacrificial material layers.
  • the first material of the insulating layers 32 can be deposited, for example, by chemical vapor deposition (CVD).
  • CVD chemical vapor deposition
  • TEOS tetraethyl orthosilicate
  • the second material of the sacrificial material layers 42 can be formed, for example, CVD or atomic layer deposition (ALD).
  • the sacrificial material layers 42 can be suitably patterned so that conductive material portions to be subsequently formed by replacement of the sacrificial material layers 42 can function as electrically conductive electrodes, such as the word lines of a memory device to be subsequently formed.
  • the sacrificial material layers 42 may comprise a portion having a strip shape extending substantially parallel to the major surface 7 of the substrate.
  • the thicknesses of the insulating layers 32 and the sacrificial material layers 42 can be in a range from 20 nm to 50 nm, although lesser and greater thicknesses can be employed for each insulating layer 32 and for each sacrificial material layer 42.
  • the number of repetitions of the pairs of an insulating layer 32 and a sacrificial material layer (e.g., a control gate electrode or a sacrificial material layer) 42 can be in a range from 2 to 1,024, and typically from 8 to 256, although a greater number of repetitions can also be employed.
  • the top and bottom gate electrodes in the stack may function as the select gate electrodes.
  • each sacrificial material layer 42 in the alternating stack (32, 42) can have a uniform thickness that is substantially invariant within each respective sacrificial material layer 42.
  • the topmost layer of the alternating stack (32, 42) may be a topmost insulating layer 32T, i.e., a topmost one of the insulating layers 32.
  • the topmost insulating layer 32T can have a greater thickness than each of the underlying insulating layers 32.
  • stepped surfaces are formed at a peripheral region of the alternating stack (32, 42), which is herein referred to as a terrace region.
  • stepped surfaces refer to a set of surfaces that include at least two horizontal surfaces and at least two vertical surfaces such that each horizontal surface is adjoined to a first vertical surface that extends upward from a first edge of the horizontal surface, and is adjoined to a second vertical surface that extends downward from a second edge of the horizontal surface.
  • a stepped cavity is formed within the volume from which portions of the alternating stack (32, 42) are removed through formation of the stepped surfaces.
  • A“stepped cavity” refers to a cavity having stepped surfaces.
  • the terrace region is formed in the staircase region 300, which is located between the memory array region 100 and the peripheral device region 200 containing the at least one semiconductor device for the peripheral circuitry.
  • the stepped cavity can have various stepped surfaces such that the horizontal cross-sectional shape of the stepped cavity changes in steps as a function of the vertical distance from the top surface of the substrate 9.
  • the stepped cavity can be formed by repetitively performing a set of processing steps.
  • the set of processing steps can include, for example, an etch process of a first type that vertically increases the depth of a cavity by one or more levels, and an etch process of a second type that laterally expands the area to be vertically etched in a subsequent etch process of the first type.
  • a“level” of a structure including alternating plurality is defined as the relative position of a pair of a first material layer and a second material layer within the structure.
  • the terrace region includes stepped surfaces of the alternating stack (32, 42) that continuously extend from a bottommost layer within the alternating stack (32, 42) to a topmost layer within the alternating stack (32, 42).
  • Each vertical step of the stepped surfaces can have the height of one or more pairs of an insulating layer 32 and a sacrificial material layer.
  • each vertical step can have the height of a single pair of an insulating layer 32 and a sacrificial material layer 42.
  • multiple“columns” of staircases can be formed along a first horizontal direction hdl such that each vertical step has the height of a plurality of pairs of an insulating layer 32 and a sacrificial material layer 42, and the number of columns can be at least the number of the plurality of pairs.
  • Each column of staircase can be vertically offset among one another such that each of the sacrificial material layers 42 has a physically exposed top surface in a respective column of staircases.
  • two columns of staircases are formed for each block of memory opening fill structures to be subsequently formed such that one column of staircases provide physically exposed top surfaces for odd-numbered sacrificial material layers 42 (as counted from the bottom) and another column of staircases provide physically exposed top surfaces for even-numbered sacrificial material layers (as counted from the bottom).
  • Configurations employing three, four, or more columns of staircases with a respective set of vertical offsets among the physically exposed surfaces of the sacrificial material layers 42 may also be employed.
  • Each sacrificial material layer 42 has a greater lateral extent, at least along one direction, than any overlying sacrificial material layers 42 such that each physically exposed surface of any sacrificial material layer 42 does not have an overhang.
  • the vertical steps within each column of staircases may be arranged along the first horizontal direction hdl, and the columns of staircases may be arranged along a second horizontal direction hd2 that is perpendicular to the first horizontal direction hdl.
  • the first horizontal direction hdl may be perpendicular to the boundary between the memory array region 100 and the staircase region 300.
  • a retro-stepped dielectric material portion 65 (i.e., an insulating fill material portion) can be formed in the stepped cavity by deposition of a dielectric material therein.
  • a dielectric material such as silicon oxide can be deposited in the stepped cavity. Excess portions of the deposited dielectric material can be removed from above the top surface of the topmost insulating layer 32T, for example, by chemical mechanical planarization (CMP). The remaining portion of the deposited dielectric material filling the stepped cavity constitutes the retro-stepped dielectric material portion 65.
  • a “retro-stepped” element refers to an element that has stepped surfaces and a horizontal cross- sectional area that increases monotonically as a function of a vertical distance from a top surface of a substrate on which the element is present. If silicon oxide is employed for the retro-stepped dielectric material portion 65, the silicon oxide of the retro-stepped dielectric material portion 65 may, or may not, be doped with dopants such as B, P, and/or F.
  • a lithographic material stack including at least a photoresist layer can be formed over the topmost insulating layer 32T and the retro- stepped dielectric material portion 65, and can be lithographically patterned to form openings therein.
  • the openings include a first set of openings formed over the memory array region 100 and a second set of openings formed over the staircase region 300.
  • the pattern in the lithographic material stack can be transferred through the topmost insulating layer 32T or the retro-stepped dielectric material portion 65, and through the alternating stack (32, 42) by at least one anisotropic etch that employs the patterned lithographic material stack as an etch mask.
  • a“memory opening” refers to a structure in which memory elements, such as a memory opening fill structure, is subsequently formed.
  • a“support opening” refers to a structure in which a support structure (such as a support pillar structure) that mechanically supports other elements is subsequently formed.
  • the memory openings 49 are formed through the topmost insulating layer 32T and the entirety of the alternating stack (32, 42) in the memory array region 100.
  • the support openings 19 are formed through the retro-stepped dielectric material portion 65 and the portion of the alternating stack (32, 42) that underlie the stepped surfaces in the staircase region 300.
  • the memory openings 49 extend through the entirety of the alternating stack (32, 42).
  • the support openings 19 extend through a subset of layers within the alternating stack (32, 42).
  • the chemistry of the anisotropic etch process employed to etch through the materials of the alternating stack (32, 42) can alternate to optimize etching of the first and second materials in the alternating stack (32, 42).
  • the anisotropic etch can be, for example, a series of reactive ion etches.
  • the sidewalls of the memory openings 49 and the support openings 19 can be substantially vertical, or can be tapered.
  • the patterned lithographic material stack can be subsequently removed, for example, by ashing.
  • the memory openings 49 and the support openings 19 can extend from the top surface of the alternating stack (32, 42) to at least the horizontal plane including the topmost surface of the insulating material layer 10.
  • an overetch into the insulating material layer 10 may be optionally performed after the top surface of the insulating material layer 10 is physically exposed at a bottom of each memory opening 49 and each support opening 19. The overetch may be performed prior to, or after, removal of the lithographic material stack.
  • the recessed surfaces of the insulating material layer 10 may be vertically offset from the un-recessed top surfaces of the insulating material layer 10 by a recess depth.
  • the recess depth can be, for example, in a range from 1 nm to 50 nm, although lesser and greater recess depths can also be employed.
  • the overetch is optional, and may be omitted. If the overetch is not performed, the bottom surfaces of the memory openings 49 and the support openings 19 can be coplanar with the topmost surface of the insulating material layer 10. [00125]
  • Each of the memory openings 49 and the support openings 19 may include a sidewall (or a plurality of sidewalls) that extends substantially perpendicular to the topmost surface of the substrate.
  • a two-dimensional array of memory openings 49 can be formed in the memory array region 100.
  • a two-dimensional array of support openings 19 can be formed in the staircase region 300.
  • FIGS. 5 A - 5G illustrate structural changes in a memory opening 49 during formation of a memory opening fill structure in a first configuration according to a first embodiment.
  • the memory opening 49 illustrated in FIGS. 5 A - 5G can by any of the memory openings 49 in the first exemplary structure of FIGS. 4A and 4B.
  • the same structural change occurs simultaneously in each of the other memory openings 49 and in each of the support openings 19.
  • each support opening 19 can extend through the retro- stepped dielectric material portion 65, a subset of layers in the alternating stack (32, 42), and optionally through the upper portion of the insulating material layer 10.
  • the recess depth of the bottom surface of each memory opening with respect to the top surface of the insulating material layer 10 can be in a range from 0 nm to 30 nm, although greater recess depths can also be employed.
  • the sacrificial material layers 42 can be laterally recessed partially to form lateral recesses (not shown), for example, by an isotropic etch.
  • the insulating layers 32 can be isotropically recessed selective to the sacrificial material layers 42 around each memory opening 49 by a first recess distance rdl by performing a first isotropic etch process.
  • the first isotropic etch process can include a wet etch process employing dilute hydrofluoric acid.
  • the first recess distance rdl may be, or may not be, greater than one half of the average thickness of the insulating layers 32 other than the topmost insulating layer 32T.
  • the first recess distance rdl can be in a range from 5 nm to 100 m, such as from 10 nm to 50 nm, although lesser and greater recess distances can also be employed.
  • the sacrificial material layers 42 can be isotropically recessed (e.g., slimmed and tapered) selective to the insulating layers 32 by a second recess distance rd2 by performing a second isotropic etch process.
  • An etch chemistry that etches the material of the sacrificial material layers 42 selective to the material of the insulating layers 32 can be employed for the second isotropic etch process.
  • a wet etch process employing phosphoric acid, or a mixture of hydrofluoric acid and glycerol at an elevated temperature, or a mixture of ethylene glycol, acetic acid, nitric acid, and ammonium fluoride at an elevated temperature.
  • the second recess distance rd2 is less than the first recess distance rdl, and is less than the one half of the minimum thickness of the sacrificial material layers 42.
  • all of the sacrificial material layers 42 can have a same thickness, and the second recess distance rd2 can be in a range from 5 % to 45 %, such as from 10 % to 40 %, of the thickness of the sacrificial material layers 42.
  • Protruding tip portions 42P that laterally protrude toward a geometrical center of a respective memory opening 49 can be formed on each of the sacrificial material layers 42 around the memory openings 49.
  • Each protruding tip portion 42P of a sacrificial material layer 42 can be ring-shaped, and can have a uniform thickness in an inner region, and an upper concave surface that adjoins a horizontal surface of an overlying insulating layer 32 and a lower concave surface that adjoins a horizontal top surface of an underlying insulating layer 32 in an outer region.
  • Each protruding tip portion 42P may have a cylindrical vertical sidewall that adjoins an inner periphery of an upper annular surface and an inner periphery of a lower annular surface.
  • the thickness of each protruding tip portion 42P can be in a range from 4 nm to 40 nm, such as from 8 nm to 20 nm, although lesser and greater thicknesses can also be employed.
  • an insulating fill material layer 34L can be conformally deposited within volumes formed by the second isotropic etch process, at a periphery of each memory opening 49, and over the topmost insulating layer 32T.
  • the thickness of the insulating fill material layer 34L can be selected such that all volumes within the memory opening that have an areal overlap with the sacrificial material layers 42 are filled within the insulating fill material layer 34L, and a memory cavity 49’ is present within each of the memory openings 49.
  • an areal overlap refers to an overlap of components as viewed from an axis passing through a geometrical center of a most proximal memory opening.
  • the insulating fill material layer 34L includes an insulating material that is different from the material of the sacrificial material layers 42.
  • the insulating fill material layer 34L can include undoped silicate glass (e.g., silicon oxide), a doped silicate glass, or organosilicate glass.
  • the material composition of the insulating fill material layer 34L may be the same as, or may be different from, the material composition of the insulating layers 32.
  • the insulating fill material layer 34L can be isotropically etched by performing a third isotropic etch process.
  • the third isotropic etch process isotropically etches the material of the insulating fill material layer 34L. Remaining portions of the insulating fill material layer 34L that remain in the volumes formed by the second isotropic etch process constitute a plurality of insulating spacers 34.
  • an anisotropic etch process may be performed such that inner sidewalls of the insulating spacers 34 are vertically coincident within inner sidewalls of the protruding tip portions of the sacrificial material layers 42.
  • a plurality of insulating spacers 34 can be formed within each memory opening 49 between each vertically neighboring pair of tip portions of the sacrificial material layers 42 and on a respective one of the insulating layers 32.
  • a memory cavity 49’ is prevent within each memory opening 49.
  • continuous material layers can be sequentially deposited in the memory cavities 49’ and in unfilled volumes of the support openings.
  • the continuous material layers can include, for example, an optional selector-side spacer layer 57, a selector material layer 56, an optional intermediate spacer layer 55, a phase change memory material layer 54, an optional memory-side spacer layer 52, and a vertical bit line 60.
  • the set of the selector-side spacer layer 57, the selector material layer 56, the intermediate spacer layer 55, the phase change memory material layer 54, and the memory-side spacer layer 52 constitutes a memory film 50.
  • the phase change memory material layer 54 includes a phase change memory material.
  • a“phase change memory material” refers to a material having at least two different phases providing different resistivity.
  • the at least two different phases can be provided, for example, by controlling the rate of cooling from a heated state to provide an amorphous state having a higher resistivity and a polycrystalline state having a lower resistivity.
  • the higher resistivity state of the phase change memory material can be achieved by faster quenching of the phase change memory material after heating to an amorphous state
  • the lower resistivity state of the phase change memory material can be achieved by slower cooling of the phase change memory material after heating to the amorphous state
  • Exemplary phase change memory materials include, but are not limited to, germanium antimony telluride compounds such as Ge2Sb2Te5 (GST), germanium antimony compounds, indium germanium telluride compounds, aluminum selenium telluride compounds, indium selenium telluride compounds, and aluminum indium selenium telluride compounds. These compounds (e.g., compound semiconductor material) may be doped (e.g., nitrogen doped GST) or undoped.
  • the phase change memory material layer can include, and/or can consist essentially of, a material selected from a germanium antimony telluride compound, a germanium antimony compound, an indium germanium telluride compound, an aluminum selenium telluride compound, an indium selenium telluride compound, or an aluminum indium selenium telluride compound.
  • the thickness of the phase change memory material layer 54 can be in a range from 1 nm to 60 nm, such as from 10 nm to 50 nm and/or from 20 nm to 40 nm, although lesser and greater thicknesses can also be employed.
  • the selector material layer 56 includes a non-Ohmic material that provides electrical connection of electrical isolation depending on the magnitude and/or the polarity of an externally applied voltage bias thereacross.
  • the selector material layer 56 includes at least one threshold switch material layer.
  • the at least one threshold switch material layer includes any suitable threshold switch material which exhibits non-linear electrical behavior, such as an ovonic threshold switch material or volatile conductive bridge.
  • the selector material layer 56 includes at least one non- threshold switch material layer, such as a tunneling selector material or diode materials (e.g., materials for p-n semiconductor diode, p-i-n semiconductor diode, Schottky diode or metal-insulator- metal diode).
  • an ovonic threshold switch is a device that does not crystallize in a low resistance state under a voltage above the threshold voltage, and reverts back to a high resistance state when not subjected to a voltage above the threshold voltage across the OTS material layer.
  • an“ovonic threshold switch material” refers to a material that displays a non-linear resistivity curve under an applied external bias voltage such that the resistivity of the material decreases with the magnitude of the applied external bias voltage.
  • an ovonic threshold switch material is non- Ohmic, and becomes more conductive under a higher external bias voltage than under a lower external bias voltage.
  • An ovonic threshold switch material can be non-crystalline (for example, amorphous) in a high resistance state, and can remain non-crystalline (for example, remain amorphous) in a low resistance state during application of a voltage above its threshold voltage across the OTS material.
  • the OTS material can revert back to the high resistance state when the high voltage above its threshold voltage is lowered below a critical holding voltage.
  • the ovonic threshold switch material can remain non-crystalline (e.g., amorphous).
  • the ovonic threshold switch material can comprise a chalcogenide material which exhibits hysteresis in both the write and read current polarities.
  • the chalcogenide material may be a GeTe compound or a Ge-Se compound doped with a dopant selected from As, N, and C, such as a Ge-Se-As compound semiconductor material.
  • the ovonic threshold switch material layer can include a selector material layer 56 which contains any ovonic threshold switch material.
  • the selector material layer 56 can include, and/or can consist essentially of, a GeSeAs alloy, a GeTeAs, a GeSeTeSe alloy, a GeSe alloy, a SeAs alloy, a GeTe alloy, or a
  • the material of the selector material layer 56 can be selected such that the resistivity of the selector material layer 56 decreases at least by two orders of magnitude (i.e., by more than a factor of 100) upon application of an external bias voltage that exceeds a critical bias voltage magnitude (also referred to as threshold voltage).
  • a critical bias voltage magnitude also referred to as threshold voltage
  • the composition and the thickness of the selector material layer 56 can be selected such that the critical bias voltage magnitude can be in a range from 1 V to 6 V, although lesser and greater voltages can also be employed for the critical bias voltage magnitude.
  • the thickness of the selector material layer 56 can be, for example, in a range from 1 nm to 50 nm, such as from 5 nm to 25 nm, although lesser and greater thicknesses can also be employed.
  • each of the selector-side spacer layer 57, the intermediate spacer layer 55, and the memory-side spacer layer 52 is optional, and can include a material that can control conduction of electrical current thereacross at a suitable level.
  • each of the selector-side spacer layer 57, the intermediate spacer layer 55, and the memory-side spacer layer 52 can independently include any material selected from a conductive metallic nitride such as titanium nitride, tungsten or tungsten nitride, a conductive metallic carbide, selenium, tellurium, doped silicon, germanium, an elemental metal such as silver, copper, or aluminum, amorphous carbon or diamondlike carbon (DLC), carbon nitride, an intermetallic alloy or an alloy of at least one metallic element and at least one non-metallic element, an alloy of any of the preceding materials, and/or a layer stack including a plurality of the preceding materials.
  • a conductive metallic nitride such as titanium nitride,
  • Each of the selector-side spacer layer 57, the intermediate spacer layer 55, and the memory-side spacer layer 52 can have a thickness in a range from 1 nm to 30 nm, such as from 3 nm to 10 nm, although lesser and greater thicknesses can be employed for each of the selector-side spacer layer 57, the intermediate spacer layer 55, and the memory-side spacer layer 52.
  • the vertical bit line 60 includes at least one conductive material, which can comprise at least one metallic material or at least one heavily doped (conductive) semiconductor material.
  • the vertical bit line 60 can include a metallic nitride liner 60A including a metallic nitride material (such as TiN, TaN, or WN) and a metallic fill material portion 60B including a metallic fill material (such as W, Cu, Co, Ru, or Mo).
  • a planarization process can be performed to remove portions of the various material layers from above the horizontal plane including the top surface of the topmost insulating layer 32T.
  • the planarization process can include, for example, a recess etch process that indiscriminately etches the various material layers of the memory film 50 and the vertical bit line 60.
  • the recess etch process can be extended until remaining material portions of the memory film 50 and the vertical bit line 60 within each memory openings 49 have top surfaces between the horizontal plane including the top surface of the topmost insulating layer 32T and the horizontal plane including the bottom surface of the topmost insulating layer 32T.
  • the phase change memory material is deposited in each of the memory openings 49 as a continuous material layer that extends through each of the sacrificial material layers 42 within the alternating stack (32, 42).
  • Each portion of the phase change memory material layer 54 that has an areal overlap with a sidewall of the protruding tip portions 42P constitutes a phase change memory material portion that can be programmed in a completed memory device.
  • a dielectric material can be deposited in vertical recesses overlying each combination of a memory film 50 and a vertical bit line 60 within each memory opening 49. Excess portions of the dielectric material can be removed from above the horizontal plane including the top surface of the topmost insulating layer 32T. Each remaining portion of the dielectric material in the memory openings 49 constitutes a dielectric cap structure 64.
  • the set of all material portions that fills a memory opening 49 is herein referred to as a memory opening fill structure 58, which can include a memory film 50, a vertical bit line 60, and a dielectric cap structure 64.
  • FIGS. 6 A - 6E are sequential schematic vertical cross-sectional views of a memory opening within the first exemplary structure during formation of a memory opening fill structure in a second configuration according to a second embodiment of the present disclosure.
  • FIG. 6A the first exemplary structure at the processing steps of FIG. 5E is illustrated, which can be employed to form a memory opening fill structure in the second configuration.
  • annular recess cavities 47 can be formed by selectively removing portions of the sacrificial material layers 42 between each vertically neighboring pair of insulating spacers 32.
  • a fourth isotropic etch process can be performed to remove annular inner segments of the protruding tip portions 42P of the sacrificial material layers 42.
  • the chemistry of the fourth isotropic etch process is selected such that the material of the sacrificial material layers 42 is etched selective to the material of the insulating layers 32.
  • a wet etch process employing phosphoric acid, or a mixture of hydrofluoric acid and glycerol at an elevated temperature, or a mixture of ethylene glycol, acetic acid, nitric acid, and ammonium fluoride at an elevated temperature.
  • the duration of the fourth isotropic etch process is selected such that outer segments of the protruding tip portions 42P of the sacrificial material layers 42 are not removed.
  • each annular recess cavity 47 has a lesser height than the sacrificial material layer 42 located at the same level as the respective annular recess cavity 47.
  • the annular recess cavities 47 may have a uniform height throughout.
  • annular recess cavities 47 can extend toward the matrix portions of the sacrificial material layers 42 such that surfaces of the annular recess cavities 47 include a peripheral portion of an annular convex surface of an overlying insulating spacer 34 and a peripheral portion of an annular convex surface of an underlying insulating spacer 34.
  • a phase change memory material can be conformally deposited to fill the annular recess cavities 47. Portions of the phase change memory material located outside the annular recess cavities 47 can be removed by an etch-back process, which can employ an isotropic etch process or an anisotropic etch process. The etch-back process may remove portions of the phase change memory material located outside the annular recess cavities 47 selective to the material of the insulating spacers 34. Each remaining portion of the phase change memory material can have an annular configuration, and is herein referred to as an annular phase change memory material portion 154. In one embodiment, the inner sidewalls of the annular phase change memory material portions 154 within a memory opening 49 may be vertically coincident with inner sidewalls of the insulating spacers 34.
  • the annular phase change memory material portions 154 can include any of the materials that can be employed for the phase change memory material layer 54.
  • continuous material layers can be sequentially deposited in the memory cavities 49’ and in unfilled volumes of the support openings.
  • the continuous material layers can include, for example, an intermediate spacer layer 55, a selector material layer 56, a selector-side spacer layer 57, and a vertical bit line 60.
  • the set of the phase change memory material portions 154, the intermediate spacer layer 55, the selector material layer 56, and the selector-side spacer layer 57 within each memory opening 49 constitutes a memory film 50.
  • Each of the continuous material layers can be deposited as a conformal material layer, and excess portions of the continuous material layers can be removed from above the top surface of the topmost insulating layer 32T and from an upper region of each memory opening 49 and each support opening 19 by a recess etch process.
  • the phase change memory material is deposited in the annular recess cavities 47, and is formed as a plurality of annular phase change memory material portions 154.
  • the annular phase change memory material portions 154 can have a lesser thickness than the matrix portion of each of the sacrificial material layers 42.
  • a dielectric material can be deposited in vertical recesses overlying each combination of a memory film 50 and a vertical bit line 60 within each memory opening 49. Excess portions of the dielectric material can be removed from above the horizontal plane including the top surface of the topmost insulating layer 32T. Each remaining portion of the dielectric material in the memory openings 49 constitutes a dielectric cap structure 64.
  • the set of all material portions that fills a memory opening 49 is herein referred to as a memory opening fill structure 58, which can include a memory film 50, a vertical bit line 60, and a dielectric cap structure 64.
  • FIGS. 7 A - 7G are sequential schematic vertical cross-sectional views of a memory opening within the first exemplary structure during formation of a memory opening fill structure in a third configuration according to a third embodiment of the present disclosure.
  • each support opening 19 can extend through the retro- stepped dielectric material portion 65, a subset of layers in the alternating stack (32, 42), and optionally through the upper portion of the insulating material layer 10.
  • the recess depth of the bottom surface of each memory opening with respect to the top surface of the insulating material layer 10 can be in a range from 0 nm to 30 nm, although greater recess depths can also be employed.
  • the sacrificial material layers 42 can be laterally recessed partially to form lateral recesses (not shown), for example, by an isotropic etch.
  • the sacrificial material layers 42 can be isotropically recessed selective to the insulating layers 32 by a recess distance rd by performing an isotropic etch process.
  • An etch chemistry that etches the material of the selective material layers 42 selective to the material of the insulating layers 32 can be employed for the isotropic etch process.
  • the insulating layers 32 include silicon oxide and if the sacrificial material layers 42 include silicon nitride, a wet etch process employing phosphoric acid, or a mixture of hydrofluoric acid and glycerol at an elevated temperature, or a mixture of ethylene glycol, acetic acid, nitric acid, and ammonium fluoride at an elevated temperature.
  • the recess distance rd can be in a range from 5 nm to 200 nm, such as from 10 nm to 100 nm, although lesser and greater recess distances may also be employed.
  • An annular recess cavity 147 can be formed in each volume formed by removal of an annular portion of a sacrificial material layer 42 around a memory opening 49.
  • An annular recess cavity 147 can be formed between each vertically neighboring pair of insulating layers 32 around each memory opening 49.
  • a memory-side spacer layer 51L can be deposited by a conformal deposition process.
  • the memory-side spacer layer 51L can have the same composition and the same thickness as the memory-side spacer layer 52 described above.
  • the thickness of the memory-side spacer layer 51L can be less than one half of the minimum height of the annular recess cavities 147.
  • the sacrificial material layers 42 can have the same thickness throughout, and each annular recess cavity 147 can have the same height as the thickness of a sacrificial material layer 42.
  • a phase change memory material layer 154L can be conformally deposited to fill all remaining volumes of the annular recess cavities 147.
  • the phase change memory material layer 154L can include any material that can be employed for the phase change memory material layer 54 described above.
  • the thickness of the phase change memory material layer 154L may be, for example, in a range from 2 nm to 60 nm, such as from 4 nm to 30 nm, although lesser and greater thicknesses can also be employed.
  • portions of the phase change memory material layer 154L that are not covered by an overlying portion of the memory-side spacer layer 51L can be removed by a recess etch process, which can employ an isotropic etch process and/or an anisotropic etch process. Horizontal potions of the memory-side spacer layer 51L can be collaterally removed by the recess etch process.
  • Each remaining portion of the phase change memory material layer 154L constitutes an annular phase change memory material portion 154.
  • the inner sidewalls of the annular phase change memory material portions 154 within a memory opening 49 may be vertically coincident with an inner sidewall of the memory-side spacer layer 51L.
  • the annular phase change memory material portions 154 can include any of the materials that can be employed for the phase change memory material layer 54.
  • continuous material layers can be sequentially deposited in the memory cavities 49’ and in unfilled volumes of the support openings.
  • the continuous material layers can include, for example, an intermediate spacer layer 55, a selector material layer 56, a selector-side spacer layer 57, and a vertical bit line 60.
  • the set of the memory- side spacer layer 51L, the phase change memory material portions 154, the intermediate spacer layer 55, the selector material layer 56, and the selector-side spacer layer 57 within each memory opening 49 constitutes a memory film 50.
  • Each of the continuous material layers can be deposited as a conformal material layer, and excess portions of the continuous material layers can be removed from above the top surface of the topmost insulating layer 32T and from an upper region of each memory opening 49 and each support opening 19 by a recess etch process.
  • the phase change memory material is deposited within a subset of volumes of the annular recess cavities 147, and is formed as a plurality of annular phase change memory material portions 154.
  • the annular phase change memory material portions 154 can have a lesser thickness than the matrix portion of each of the sacrificial material layers 42.
  • a dielectric material can be deposited in vertical recesses overlying each combination of a memory film 50 and a vertical bit line 60 within each memory opening 49. Excess portions of the dielectric material can be removed from above the horizontal plane including the top surface of the topmost insulating layer 32T. Each remaining portion of the dielectric material in the memory openings 49 constitutes a dielectric cap structure 64.
  • the set of all material portions that fills a memory opening 49 is herein referred to as a memory opening fill structure 58, which can include a memory film 50, a vertical bit line 60, and a dielectric cap structure 64.
  • each support pillar structure 20 can include a same set of structural components as a memory opening fill structure 20.
  • Each memory opening fill structure 58 includes a vertical bit line 60 and a memory film 50.
  • a contact level dielectric layer 73 can be formed over the alternating stack (32, 42) of insulating layer 32 and sacrificial material layers 42, and over the memory opening fill structures 58 and the support pillar structures 20.
  • the contact level dielectric layer 73 includes a dielectric material that is different from the dielectric material of the sacrificial material layers 42.
  • the contact level dielectric layer 73 can include silicon oxide.
  • the contact level dielectric layer 73 can have a thickness in a range from 50 nm to 500 nm, although lesser and greater thicknesses can also be employed.
  • a photoresist layer (not shown) can be applied over the contact level dielectric layer 73, and is lithographically patterned to form openings in areas between clusters of memory opening fill structures 58.
  • the pattern in the photoresist layer can be transferred through the contact level dielectric layer 73, the alternating stack (32, 42) and/or the retro- stepped dielectric material portion 65 employing an anisotropic etch to form backside trenches 79, which vertically extend from the top surface of the contact level dielectric layer 73 at least to the top surface of the substrate 9, and laterally extend through the memory array region 100 and the staircase region 300.
  • the backside trenches 79 can laterally extend along a first horizontal direction hdl (e.g., word line direction) and can be laterally spaced apart among one another along a second horizontal direction hd2 (e.g., horizontal bit line direction) that is perpendicular to the first horizontal direction hdl.
  • the memory opening fill structures 58 can be arranged in rows that extend along the first horizontal direction hdl.
  • Each backside trench 79 can have a uniform width that is invariant along the lengthwise direction (i.e., along the first horizontal direction hdl). Multiple rows of memory opening fill structures 58 can be located between a neighboring pair of a backside trenches 79.
  • the photoresist layer can be removed, for example, by ashing.
  • an etchant that selectively etches the second material of the sacrificial material layers 42 with respect to the first material of the insulating layers 32 can be introduced into the backside trenches 79, for example, employing an isotropic etch process.
  • FIG. 11A illustrates a region of the first exemplary structure in case the first exemplary structure is in the first configuration of the first embodiment.
  • FIG. 12A illustrate a region of the first exemplary structure in case the first exemplary structure is in the second configuration of the second embodiment.
  • FIG. 13A illustrate a region of the first exemplary structure in case the first exemplary structure is in the third configuration of the third embodiment.
  • the sacrificial material layers 42 can include silicon nitride, and the materials of the insulating layers 32 and the retro- stepped dielectric material portion 65 can be selected from silicon oxide and dielectric metal oxides.
  • the etch process that removes the second material selective to the first material and the outermost layer of the memory films 50 can be a wet etch process employing a wet etch solution, or can be a gas phase (dry) etch process in which the etchant is introduced in a vapor phase into the backside trenches 79.
  • the etch process can be a wet etch process in which the first exemplary structure is immersed within a wet etch tank including phosphoric acid, which etches silicon nitride selective to silicon oxide, silicon, and various other materials employed in the art.
  • the support pillar structure 20, the retro-stepped dielectric material portion 65, and the memory opening fill structures 58 provide structural support while the backside recesses 43 are present within volumes previously occupied by the sacrificial material layers 42.
  • Backside recesses 43 are formed in volumes from which the sacrificial material layers 42 are removed.
  • the removal of the second material of the sacrificial material layers 42 can be selective to the first material of the insulating layers 32, the material of the retro- stepped dielectric material portion 65, the insulating material layer 10, and the material of the outermost material portions of the memory opening fill structures 58.
  • the sacrificial material layers 42 include silicon nitride
  • a wet etch process employing hot phosphoric acid can be employed to form the backside recesses 43.
  • the isotropic etch process employed to form the backside recesses 43 can employ an etch chemistry that is selective to the material of the selector-side spacer layer 57.
  • the isotropic etch process employed to form the backside recesses 43 can employ an etch chemistry that is selective to the material of the annular phase change memory material portions 154.
  • the isotropic etch process employed to form the backside recesses 43 can employ an etch chemistry that is selective to the material of the memory-side spacer layer 51L.
  • an additional isotropic etch process such as a wet etch process can be performed to remove physically exposed portions of the memory-side spacer layer 51L.
  • the memory-side spacer layer 51L can be divided into memory-side spacer portions 51 contacting a respective one of the insulating layers 32.
  • a subset of the memory-side spacer portions 51 can have a double-sided flange configuration including an upper annular portion contacting a top surface of an insulating layer 32, a lower annular portion contacting a bottom surface of the insulating layer 32, and a cylindrical tapered-thickness portion that connects the upper annular portion and the lower annular portion and contacts a cylindrical sidewall of the insulating layer 32.
  • Each backside recess 43 can be a laterally extending cavity having a lateral dimension that is greater than the vertical extent of the cavity. In other words, the lateral dimension of each backside recess 43 can be greater than the height of the backside recess 43.
  • a plurality of backside recesses 43 can be formed in the volumes from which the second material of the sacrificial material layers 42 is removed.
  • the memory openings in which the memory opening fill structures 58 are formed are herein referred to as front side openings or front side cavities in contrast with the backside recesses 43.
  • each backside recess 43 can define a space for receiving a respective word line of a three- dimensional memory device.
  • Each of the plurality of backside recesses 43 can extend substantially parallel to the top surface of the substrate 9.
  • a backside recess 43 can be vertically bounded by a top surface of an underlying insulating layer 32 and a bottom surface of an overlying insulating layer 32.
  • each backside recess 43 can have a uniform height throughout.
  • a barrier layer 44 can be optionally formed.
  • the barrier layer 44 if present, comprises a conductive material, a semiconducting material, or a dielectric material that limits the electrical current through a neighboring phase change memory material portion.
  • the barrier layer 44 can be formed in the backside recesses 43 and on a sidewall of the backside trench 79.
  • the barrier layer 44 can be formed directly on horizontal surfaces of the insulating layers 32 and sidewalls of the memory opening fill structures 58 within the backside recesses 43.
  • the barrier layer 44 can be formed by a conformal deposition process such as atomic layer deposition (ALD).
  • ALD atomic layer deposition
  • the barrier layer 44 can include a material selected from a conductive metallic nitride such as titanium nitride, tungsten or tungsten nitride, a conductive metallic carbide, selenium, tellurium, doped silicon, germanium, an elemental metal such as silver, copper, or aluminum, amorphous carbon or diamondlike carbon (DLC), carbon nitride, an intermetallic alloy or an alloy of at least one metallic element and at least one non-metallic element, an alloy of any of the preceding materials, and/or a layer stack including a plurality of the preceding materials.
  • the thickness of the barrier layer 44 can be in a range from 1 nm to 15 nm, such as 2 to 6 nm, although lesser and greater thicknesses can also be employed.
  • At least one metallic material can be subsequently deposited in remaining volumes of the backside recesses 43.
  • the at least one metallic material can include a metallic barrier layer and a metallic fill material.
  • the metallic barrier layer includes an electrically conductive metallic material that can function as a diffusion barrier layer and/or adhesion promotion layer for a metallic fill material to be subsequently deposited.
  • the metallic barrier layer can include a conductive metallic nitride material such as TiN, TaN, WN, or a stack thereof, or can include a conductive metallic carbide material such as TiC, TaC, WC, or a stack thereof.
  • the metallic barrier layer can be deposited by a conformal deposition process such as chemical vapor deposition (CVD) or atomic layer deposition (ALD).
  • the thickness of the metallic barrier layer can be in a range from 2 nm to 8 nm, such as from 3 nm to 6 nm, although lesser and greater thicknesses can also be employed.
  • the metallic barrier layer can consist essentially of a conductive metal nitride such as TiN.
  • the metal fill material can be subsequently deposited in remaining volumes of the plurality of backside recesses 43, on the sidewalls of the at least one the backside trench 79, and over the top surface of the contact level dielectric layer 73 to form a metallic fill material layer.
  • the metallic fill material can be deposited by a conformal deposition method, which can be, for example, chemical vapor deposition (CVD), atomic layer deposition (ALD), electroless plating, electroplating, or a combination thereof.
  • the metallic fill material layer can consist essentially of at least one elemental metal.
  • the at least one elemental metal of the metallic fill material layer can be selected, for example, from tungsten, cobalt, ruthenium, titanium, and tantalum.
  • the metallic fill material layer can consist essentially of a single elemental metal.
  • the metallic fill material layer can be deposited employing a fluorine-containing precursor gas such as WF6.
  • the metallic fill material layer can be a tungsten layer including a residual level of fluorine atoms as impurities.
  • the metallic fill material layer is spaced from the insulating layers 32 and the memory opening fill structures 58 by the metallic barrier layer, which is a metallic barrier layer that blocks diffusion of fluorine atoms therethrough.
  • a plurality of electrically conductive layers 46 can be formed in the plurality of backside recesses 43, and a continuous electrically conductive material layer 46L can be formed on the sidewalls of each backside trench 79 and over the contact level dielectric layer 73.
  • Each electrically conductive layer 46 includes a portion of the metallic barrier layer and a portion of the metallic fill material layer that are located between a vertically neighboring pair of dielectric material layers such as a pair of insulating layers 32.
  • the continuous electrically conductive material layer 46L includes a continuous portion of the metallic barrier layer and a continuous portion of the metallic fill material layer that are located in the backside trenches 79 or above the contact level dielectric layer 73.
  • Each sacrificial material layer 42 can be replaced with an electrically conductive layer 46.
  • a backside cavity 79’ is present in the portion of each backside trench 79 that is not filled with the barrier layer 44 and the continuous electrically conductive material layer 46L.
  • Each of the electrically conductive layers 46 can include a matrix portion 46M having a uniform thickness and located between a vertically neighboring pair of insulating layers 32, a plurality of annular portions 46A having a lesser thickness than the matrix portion 46M and having a respective annular shape that laterally surrounds a respective one of the memory opening fill structures 58, and a plurality of tapered-thickness portions 46T that connects the matrix portion 46M to a respective one of the annular portions 46A and having an upper annular concave surface and a lower annular concave surface as illustrated in FIG. 1 IB.
  • Each tapered-thickness portion 46T has an annular shape and has a thickness that increases with a lateral distance from a vertical axis passing through a geometrical center of a respective memory opening fill structure 58.
  • the configuration of FIG. 11B makes the distance“D” between adjacent phase change memory material portions near adjacent word lines 46 longer, which lessens a thermal disturb effect between phase change memory material portions.
  • each of the electrically conductive layers 46 can include a matrix portion 46M having a uniform thickness and located between a vertically neighboring pair of insulating layers 32, and a plurality of tapered-thickness portions 46T that are connected to the matrix portion 46M and include a respective upper annular concave surface and a respective lower annular concave surface as illustrated in FIG. 12B.
  • Each tapered-thickness portion 46T has an annular shape and has a thickness that increases with a lateral distance from a vertical axis passing through a geometrical center of a respective memory opening fill structure 58.
  • each of the electrically conductive layers 46 can have a uniform thickness throughout as illustrated in FIG. 13B.
  • the deposited metallic material of the continuous electrically conductive material layer 46L is etched back from the sidewalls of each backside trench 79 and from above the contact level dielectric layer 73, for example, by an isotropic wet etch, an anisotropic dry etch, or a combination thereof.
  • Each remaining portion of the deposited metallic material in the backside recesses 43 constitutes an electrically conductive layer 46.
  • Each electrically conductive layer 46 can be a conductive line structure.
  • the sacrificial material layers 42 are replaced with the electrically conductive layers 46.
  • Each electrically conductive layer 46 can function as a word line.
  • each electrically conductive layer 46 can be a word line that functions as a common electrode for the plurality of vertical memory devices.
  • the removal of the continuous electrically conductive material layer 46L can be selective to the material of the barrier layer 44.
  • a horizontal portion of the barrier layer 44 can be present at the bottom of each backside trench 79.
  • the removal of the continuous electrically conductive material layer 46L may not be selective to the material of the barrier layer 44 or, the barrier layer 44 may not be employed.
  • a backside cavity 79’ is present within each backside trench 79.
  • an insulating material layer can be formed in the backside trenches 79 and over the contact level dielectric layer 73 by a conformal deposition process.
  • exemplary conformal deposition processes include, but are not limited to, chemical vapor deposition and atomic layer deposition.
  • the insulating material layer includes an insulating material such as silicon oxide, silicon nitride, a dielectric metal oxide, an organosilicate glass, or a combination thereof.
  • the insulating material layer can include silicon oxide.
  • the insulating material layer can be formed, for example, by low pressure chemical vapor deposition (LPCVD) or atomic layer deposition (ALD).
  • LPCVD low pressure chemical vapor deposition
  • ALD atomic layer deposition
  • Excess portions of the insulating material layer may be removed from above the contact level dielectric layer 73 by a planarization process such as a recess etch process. Each remaining portion of the insulating material layer in the backside trenches 79 constitutes a dielectric backside trench fill structure 76.
  • contact via structures (88, 86, 8P) can be formed through the contact level dielectric layer 73, and optionally through the retro-stepped dielectric material portion 65.
  • horizontal bit lines (or bit line contact via structures that are connected to horizontal bit lines) 88 can be formed through the contact level dielectric layer 73 on each vertical bit line 60.
  • Word line contact via structures 86 can be formed on the electrically conductive layers 46 through the contact level dielectric layer 73, and through the retro-stepped dielectric material portion 65.
  • Peripheral device contact via structures 8P can be formed through the retro-stepped dielectric material portion 65 directly on respective nodes of the peripheral devices.
  • FIGS. 18A - 18D illustrate steps in a method of making a memory device according to a fourth embodiment of the present disclosure.
  • the in-process structure of FIG. 18A may be derived from the structure shown in FIG. 5B.
  • each sacrificial material layer includes three sublayers: a top sublayer 42T, a bottom sublayer 42B located below the top sublayer, and a middle sublayer 42M located between the top and bottom sublayers.
  • the top and bottom sublayers (42T, 42B) comprise a different material from the middle sublayer 42M that may be selectively etched with respect to the middle sublayer.
  • the top and bottom sublayers (42T, 42B) comprise silicon, such as amorphous silicon or polysilicon, and the middle sublayer 42M comprises silicon nitride.
  • the alternating stack includes three different materials: the insulating layer 32 material (e.g., silicon oxide), the top and bottom sublayer (42T, 42B) material (e.g., silicon) and middle sublayer 42M material (e.g., silicon nitride).
  • the top and bottom sublayers (42T, 42B) are recessed by a selective isotropic etch which etches the top and bottom sublayers (42T, 42B) selective to the middle sublayer 42M and the insulating layers 32.
  • the structure shown in FIG. 18B is similar to the structure shown in FIG. 5C.
  • FIGS. 5D to 5G are then performed as described above to form the structure shown in FIG. 18C.
  • the structure shown in FIG. 18C is similar to the structure shown in FIG. 5G.
  • FIGS. 8 to 1 IB are then performed as described above to form the structure shown in FIG. 18D.
  • the structure shown in FIG. 18D is similar to the structure shown in FIG. 1 IB.
  • the memory device of the fourth embodiment is then completed by performing the steps shown in FIGS. 14 to 17B described above.
  • a three-dimensional memory device comprises an alternating stack of insulating layers 32 and electrically conductive layers 46 located over a substrate 9; and memory openings 49 extending through the alternating stack (32, 46) and filled within a respective memory opening fill structure 58, wherein: each memory opening fill structure 58 comprises a vertical bit line 60 and a vertical stack of discrete phase change memory material portions 154; and each of the discrete phase change memory material portions 154 in the vertical stack is located between a respective vertically neighboring pair of the insulating layers 32 within the alternating stack (32, 46) and has a vertical thickness that is less than a vertical thickness of a respective electrically conductive layer 46 located between the respective vertically neighboring pair of the insulating layers 32 within the alternating stack (32, 46) as illustrated in FIGS. 12B and 13B.
  • Each of the discrete phase change memory material potions comprises a respective annular phase change memory material portion 154.
  • each memory opening fill structure 58 comprises a vertical stack of insulating spacers 34; and a plurality of insulating spacers 34 within the vertical stack of insulating spacers 34 contacts a sidewall, a portion of a top surface, and a portion of a bottom surface, of a respective one of the insulating layers 32 within the alternating stack (32, 46) as illustrated in FIG. 12B.
  • each insulating spacer 34 within the plurality of insulating spacers 34 contacts a bottom surface of an overlying one of discrete phase change memory material portions 154 and contacts a top surface of an underlying one of the discrete phase change memory material portions 154.
  • each interface between the plurality of insulating spacers 34 and the discrete phase change memory material portions 154 is an annular interface located within a respective horizontal plane.
  • each insulating spacer 34 within the plurality of insulating spacers 34 comprises: an upper annular convex surface having a bottom periphery that contacts the top surface of the respective one of the insulating layers 32 within the alternating stack (32, 46); and a lower annular convex surface having a top periphery that contacts the bottom surface of the respective one of the insulating layers 32 within the alternating stack (32, 46) as illustrated in FIG. 12B.
  • an insulating spacer 34 of the plurality of insulating spacers 34 comprises: an annular top surface having an inner periphery that is adjoined to an upper periphery of a vertical cylindrical sidewall of the insulating spacer 34; and an annular bottom surface having an inner periphery that is adjoined to a lower periphery of the vertical cylindrical sidewall of the insulating spacer 34.
  • each memory opening fill structure 58 comprises a selector material layer 56 located between the vertical bit line 60 and the vertical stack of discrete phase change memory material portions 154.
  • each of the electrically conductive layers 46 within the alternating stack (32, 46) comprises a word line containing a matrix portion 46M located between neighboring pairs of memory openings 49 and a plurality of tapered-thickness portions 46T that protrude toward, and laterally surround, a respective one of the memory openings 49 and having a variable vertical thickness that is not greater than the thickness of the matrix portion 46M, as illustrated in FIG. 12B.
  • a three-dimensional memory device comprises: an alternating stack of insulating layers 32 and electrically conductive layers 46 located over a substrate 9; and memory openings 49 extending through the alternating stack (32, 46) and filled within a respective memory opening fill structure 58, wherein: each memory opening fill structure 58 comprises a vertical bit line 60 and a phase change memory material (54,
  • each of the electrically conductive layers 46 within the alternating stack (32, 46) comprises a word line containing a matrix portion 46M located between neighboring pairs of memory openings 49 and a plurality of protruding portions (46A, 46T) that protrude toward, and laterally surround, a respective one of the memory openings 49, as illustrated in FIGS. 11B, 12B.
  • the phase change memory material (54, 154) may comprise portions of a phase change memory material layer 54 that are proximal to inner sidewalls of annular portions 46A of the electrically conductive layers 46 as illustrated in FIGS. 11B or 18D, or may comprise the annular phase change memory material portions 154 as illustrated in FIG. 12B.
  • each memory opening fill structure 58 comprises a selector material layer 56 laterally surrounding the vertical bit line 60 and laterally surrounded by each of the electrically conductive material layers 46 within the alternating stack (32, 46). In one embodiment, each of the vertical bit line 60 and the selector material layer 56 continuously extends vertically through each electrically conductive layer 46 within the alternating stack (32, 46).
  • each memory opening fill structure 58 comprises a vertical stack of insulating spacers 34; and a plurality of insulating spacers 34 within the vertical stack of insulating spacers 34 contacts a sidewall, a portion of a top surface, and a portion of a bottom surface, of a respective one of the insulating layers 32 within the alternating stack (32, 46).
  • each insulating spacer 34 within the plurality of insulating spacers 34 comprises: an upper annular convex surface having a bottom periphery that contacts the top surface of the respective one of the insulating layers 32 within the alternating stack (32, 46); and a lower annular convex surface having a top periphery that contacts the bottom surface of the respective one of the insulating layers 32 within the alternating stack
  • the protruding portions (46A, 46T) comprise a plurality of tapered-thickness portions 46T that protrude toward, and laterally surround, a respective one of the memory openings 49 and having a variable vertical thickness; and each of the tapered- thickness portions 46T comprises an upper concave annular surface and a lower concave annular surface, as shown in FIGS. 11B and 12B.
  • the protruding portions (46A, 46T) comprise a plurality of annular portions 46A that protrude toward, and laterally surround, a respective one of the memory openings 49 and having a vertical thickness that is thinner than a vertical thickness of the matrix portion 46M.
  • each region in which an outer surface of a phase change memory material potion has an areal overlap (as measured on a vertical plane) with a most proximal sidewall surface of the electrically conductive layers 46 is less than the maximum height of the respective electrically conductive layer 46 (such as the thickness of the matrix portion 46M of the respective electrically conductive layer 46).
  • phase change memory material may also reduce the supply voltage for the memory device chip. This reduces the device power consumption and reduces the required size of the driver transistor(s). Furthermore, this also makes the distance between phase change memory material portions near adjacent word lines longer, which lessens the thermal disturb effect between phase change memory material portions.
  • a stack of an alternating plurality of first material layers (which can be insulating layers 32L) and second material layers (which can be sacrificial material layer 42L) is formed over the top surface of the substrate 9 of FIG. 1 to provide a second exemplary structure.
  • a“material layer” refers to a layer including a material throughout the entirety thereof.
  • an alternating plurality of first elements and second elements refers to a structure in which instances of the first elements and instances of the second elements alternate.
  • first elements may have the same thickness thereamongst, or may have different thicknesses.
  • the second elements may have the same thickness thereamongst, or may have different thicknesses.
  • the alternating plurality of first material layers and second material layers may begin with an instance of the first material layers or with an instance of the second material layers, and may end with an instance of the first material layers or with an instance of the second material layers.
  • an instance of the first elements and an instance of the second elements may form a unit that is repeated with periodicity within the alternating plurality.
  • Each first material layer includes a first material
  • each second material layer includes a second material that is different from the first material.
  • each first material layer can be an insulating layer 32L
  • each second material layer can be a sacrificial material layer.
  • the stack can include an alternating plurality of insulating layers 32L and sacrificial material layers 42L, and constitutes a prototype stack of alternating layers comprising insulating layers 32L and sacrificial material layers 42L.
  • the stack of the alternating plurality is herein referred to as a vertically alternating sequence (32L, 42L).
  • the vertically alternating sequence (32L, 42L) can include insulating layers 32L composed of the first material, and sacrificial material layers 42L composed of a second material different from that of insulating layers 32L.
  • the first material of the insulating layers 32L can be at least one insulating material.
  • each insulating layer 32L can be an insulating material layer.
  • Insulating materials that can be employed for the insulating layers 32L include, but are not limited to, silicon oxide (including doped or undoped silicate glass), silicon nitride, silicon oxynitride, organosilicate glass (OSG), spin-on dielectric materials, dielectric metal oxides that are commonly known as high dielectric constant (high-k) dielectric oxides (e.g., aluminum oxide, hafnium oxide, etc.) and silicates thereof, dielectric metal oxynitrides and silicates thereof, and organic insulating materials.
  • the first material of the insulating layers 32L can be silicon oxide.
  • the second material of the sacrificial material layers 42L is a sacrificial material that can be removed selective to the first material of the insulating layers 32L.
  • a removal of a first material is“selective to” a second material if the removal process removes the first material at a rate that is at least twice the rate of removal of the second material.
  • the ratio of the rate of removal of the first material to the rate of removal of the second material is herein referred to as a“selectivity” of the removal process for the first material with respect to the second material.
  • the sacrificial material layers 42L may comprise an insulating material, a semiconductor material, or a conductive material.
  • the second material of the sacrificial material layers 42L can be subsequently replaced with electrically conductive electrodes which can function, for example, as word lines of a phase change memory device.
  • Non limiting examples of the second material include silicon nitride, an amorphous semiconductor material (such as amorphous silicon), and a poly crystalline semiconductor material (such as polysilicon).
  • the sacrificial material layers 42L can be spacer material layers that comprise silicon nitride or a semiconductor material including at least one of silicon and germanium.
  • the insulating layers 32L can include silicon oxide, and sacrificial material layers can include silicon nitride sacrificial material layers.
  • the first material of the insulating layers 32L can be deposited, for example, by chemical vapor deposition (CVD).
  • CVD chemical vapor deposition
  • TEOS tetraethyl orthosilicate
  • the second material of the sacrificial material layers 42L can be formed, for example, CVD or atomic layer deposition (ALD).
  • the sacrificial material layers 42L can be suitably patterned so that conductive material portions to be subsequently formed by replacement of the sacrificial material layers 42L can function as electrically conductive electrodes, such as word lines of a phase change memory device to be subsequently formed.
  • the sacrificial material layers 42L may comprise a portion having a strip shape extending substantially parallel to the major surface 7 of the substrate.
  • the thicknesses of the insulating layers 32L and the sacrificial material layers 42L can be in a range from 20 nm to 50 nm, although lesser and greater thicknesses can be employed for each insulating layer 32L and for each sacrificial material layer 42L.
  • the number of repetitions of the pairs of an insulating layer 32L and a sacrificial material layer (e.g., a control gate electrode or a sacrificial material layer) 42L can be in a range from 2 to 1,024, and typically from 8 to 256, although a greater number of repetitions can also be employed.
  • the top and bottom gate electrodes in the stack may function as the select gate electrodes.
  • each sacrificial material layer 42L in the vertically alternating sequence (32L, 42L) can have a uniform thickness that is substantially invariant within each respective sacrificial material layer 42L.
  • an insulating cap layer 70L can be formed over the vertically alternating sequence (32L, 42L).
  • the insulating cap layer 70L includes a dielectric material that is different from the material of the sacrificial material layers 42L.
  • the insulating cap layer 70L can include a dielectric material that can be employed for the insulating layers 32L as described above.
  • the insulating cap layer 70L can have a greater thickness than each of the insulating layers 32L.
  • the insulating cap layer 70L can be deposited, for example, by chemical vapor deposition.
  • the insulating cap layer 70L can be a silicon oxide layer.
  • stepped surfaces are formed at a peripheral region of the vertically alternating sequence (32L, 42L), which is herein referred to as a terrace region.
  • “stepped surfaces” refer to a set of surfaces that include at least two horizontal surfaces and at least two vertical surfaces such that each horizontal surface is adjoined to a first vertical surface that extends upward from a first edge of the horizontal surface, and is adjoined to a second vertical surface that extends downward from a second edge of the horizontal surface.
  • a stepped cavity is formed within the volume from which portions of the vertically alternating sequence (32L, 42L) are removed through formation of the stepped surfaces.
  • A“stepped cavity” refers to a cavity having stepped surfaces.
  • the terrace region is formed in the staircase region 300, which is located between the memory array region 100 and the peripheral device region 200 containing the at least one semiconductor device for the peripheral circuitry.
  • the stepped cavity can have various stepped surfaces such that the horizontal cross-sectional shape of the stepped cavity changes in steps as a function of the vertical distance from the top surface of the substrate 9.
  • the stepped cavity can be formed by repetitively performing a set of processing steps.
  • the set of processing steps can include, for example, an etch process of a first type that vertically increases the depth of a cavity by one or more levels, and an etch process of a second type that laterally expands the area to be vertically etched in a subsequent etch process of the first type.
  • a“level” of a structure including alternating plurality is defined as the relative position of a pair of a first material layer and a second material layer within the structure.
  • the terrace region includes stepped surfaces of the vertically alternating sequence (32L, 42L) that continuously extend from a bottommost layer within the vertically alternating sequence (32L, 42L) to a topmost layer within the vertically alternating sequence (32L, 42L).
  • Each vertical step of the stepped surfaces can have the height of one or more pairs of an insulating layer 32L and a sacrificial material layer.
  • each vertical step can have the height of a single pair of an insulating layer 32L and a sacrificial material layer 42L.
  • multiple“columns” of staircases can be formed along a first horizontal direction hdl such that each vertical step has the height of a plurality of pairs of an insulating layer 32L and a sacrificial material layer 42L, and the number of columns can be at least the number of the plurality of pairs.
  • Each column of staircase can be vertically offset among one another such that each of the sacrificial material layers 42L has a physically exposed top surface in a respective column of staircases.
  • two columns of staircases are formed for each block of memory stack structures to be subsequently formed such that one column of staircases provide physically exposed top surfaces for odd-numbered sacrificial material layers 42L (as counted from the bottom) and another column of staircases provide physically exposed top surfaces for even-numbered sacrificial material layers (as counted from the bottom).
  • Configurations employing three, four, or more columns of staircases with a respective set of vertical offsets among the physically exposed surfaces of the sacrificial material layers 42L may also be employed.
  • Each sacrificial material layer 42L has a greater lateral extent, at least along one direction, than any overlying sacrificial material layers 42L such that each physically exposed surface of any sacrificial material layer 42L does not have an overhang.
  • the vertical steps within each column of staircases may be arranged along the first horizontal direction hdl, and the columns of staircases may be arranged along a second horizontal direction hd2 that is perpendicular to the first horizontal direction hdl.
  • the first horizontal direction hdl may be perpendicular to the boundary between the memory array region 100 and the staircase region 300.
  • a retro-stepped dielectric material portion 65 (i.e., an insulating fill material portion) can be formed in the stepped cavity by deposition of a dielectric material therein.
  • a dielectric material such as silicon oxide can be deposited in the stepped cavity. Excess portions of the deposited dielectric material can be removed from above the top surface of the insulating cap layer 70L, for example, by chemical mechanical planarization (CMP). [00217] The remaining portion of the deposited dielectric material filling the stepped cavity constitutes the retro-stepped dielectric material portion 65.
  • a“retro- stepped” element refers to an element that has stepped surfaces and a horizontal cross- sectional area that increases monotonically as a function of a vertical distance from a top surface of a substrate on which the element is present. If silicon oxide is employed for the retro-stepped dielectric material portion 65, the silicon oxide of the retro-stepped dielectric material portion 65 may, or may not, be doped with dopants such as B, P, and/or F.
  • a lithographic material stack including at least a photoresist layer can be formed over the insulating cap layer 70L and the retro-stepped dielectric material portion 65, and can be lithographically patterned to form line-shaped openings therein.
  • the line-shaped openings laterally extend along a first horizontal direction hdl, and have a uniform width along a second horizontal direction hd2 that is perpendicular to the first horizontal direction hdl.
  • the pattern in the lithographic material stack can be transferred through the insulating cap layer 70L or the retro-stepped dielectric material portion 65, and through the vertically alternating sequence (32L, 42L) by at least one anisotropic etch that employs the patterned lithographic material stack as an etch mask. Portions of the vertically alternating sequence (32L, 42L) underlying the line-shaped openings in the patterned lithographic material stack are etched to form line trenches 49.
  • a“line trench” refers to a trench that has laterally extends straight along a horizontal direction.
  • the line trenches 49 laterally extend along the first horizontal direction hdl (e.g., word line direction) through the vertically alternating sequence (32, 42).
  • the line trenches 49 have a respective uniform width that is invariant under translation along the first horizontal direction hdl.
  • the line trenches 49 can have the same width throughout, and the spacing between neighboring pairs of the line trenches 49 can be the same.
  • the line trenches 49 can constitute a one-dimensional periodic array of line trenches 49 having a pitch along a second horizontal direction hd2 (e.g., bit line direction) that is perpendicular to the first horizontal direction hdl.
  • the width of the line trenches 49 along the second horizontal direction hd2 can be in a range from 30 nm to 500 nm, such as from 60 nm to 250 nm, although lesser and greater widths can also be employed.
  • the line trenches 49 extend through each layer of the vertically alternating sequence (32, 42) and the retro-stepped dielectric material portion 65.
  • the chemistry of the anisotropic etch process employed to etch through the materials of the vertically alternating sequence (32L, 42L) can alternate to optimize etching of the first and second materials in the vertically alternating sequence (32L, 42L).
  • the anisotropic etch can be, for example, a series of reactive ion etches.
  • the sidewalls of the line trenches 49 can be substantially vertical, or can be tapered.
  • the patterned lithographic material stack can be subsequently removed, for example, by ashing.
  • the line trenches 49 laterally extend through the entire memory array region 100, and laterally extend into the contact region 300.
  • the line trenches 49 may laterally extend through the entire contact region 300 along the first horizontal direction hdl, or may laterally extend only through part of a width, but not the entire width along the first horizontal direction hdl, of the contact region 300.
  • an overetch into the insulating material layer 10 may be optionally performed after the top surface of the insulating material layer 10 is physically exposed at a bottom of each line trench 49. The overetch may be performed prior to, or after, removal of the lithographic material stack.
  • the recessed surfaces of the insulating material layer 10 may be vertically offset from the un recessed top surfaces of the insulating material layer 10 by a recess depth.
  • the recess depth can be, for example, in a range from 1 nm to 50 nm, although lesser and greater recess depths can also be employed.
  • the overetch is optional, and may be omitted. If the overetch is not performed, the bottom surfaces of the line trenches 49 can be coplanar with the topmost surface of the insulating material layer 10.
  • Each of the line trenches 49 may include a sidewall (or a plurality of sidewalls) that extends substantially perpendicular to the topmost surface of the substrate.
  • Each patterned portion of an insulating layer 32L is herein referred to as an insulating strip 32, which can laterally extend along the first horizontal direction hdl and is located between a respective neighboring pair of line trenches 49.
  • Each patterned portion of a sacrificial material layer 42L is herein referred to as a sacrificial material strip 42, which can laterally extend along the first horizontal direction hdl and is located between a respective neighboring pair of line trenches 49.
  • Each patterned portion of the insulating cap layer 70L is herein referred to as an insulating cap strip 70, which can laterally extend along the first horizontal direction hdl and is located between a respective neighboring pair of line trenches 49.
  • the vertically alternating sequence (32L, 42L) is divided into vertically alternating stacks (32, 42) of insulating strips 32 and sacrificial material strips 42 that laterally extend along the first horizontal direction hdl, and are laterally spaced apart along a second horizontal direction hd2.
  • a vertically alternating stack (32, 42) is also referred to as an alternating stack (32, 42) in the present disclosure.
  • a sacrificial fill material is deposited in the line trenches 49.
  • the sacrificial fill material comprises a material that can be removed selective to the materials of the insulating strips 32, the sacrificial material strips 42, and the insulating cap strips 70.
  • the sacrificial fill material can include amorphous silicon, a silicon-germanium alloy, amorphous carbon, diamond- like carbon, a polymer material, borosilicate glass, or organosilicate glass.
  • a sacrificial liner such as a silicon oxide liner, a silicon nitride liner, or a dielectric oxide liner may be deposited prior to deposition of the sacrificial fill material in the line trenches 49. Excess portions of the sacrificial fill material can be removed from above the horizontal plane including the top surfaces of the insulating cap strips 70. Each remaining portion of the sacrificial fill material filling a respective line trench 49 constitutes a sacrificial rail structure 22R that laterally extends along the first horizontal direction hdl.
  • a photoresist layer can be applied over the vertically alternating stacks (32, 42) and the sacrificial rail structures 22R, and can be lithographically patterned to form a two-dimensional array of openings therethrough.
  • the two-dimensional array of openings includes rows of opening arranged along the first horizontal direction hdl and overly a respective one of the sacrificial rail structures 22R.
  • An anisotropic etch process can be performed to etch portions of the material of the sacrificial rail structures 22R that are not masked by the patterned photoresist layer.
  • the chemistry of the anisotropic etch process can etch the material of the sacrificial rail structures 22R selective to the material of the insulating cap strips 70.
  • edges of the openings in the photoresist layer that overlie the sacrificial rail structures 22R can be parallel to the second horizontal direction hd2.
  • Via cavities 23’ can be formed in the volumes from which portions of the sacrificial rail structures 22R are removed. Each via cavity 23’ can vertically extend down to the top surface of the substrate 9, such as the top surface of the insulating material layer 10.
  • the via cavities 23’ can comprise rectangular via cavities having a respective rectangular horizontal cross-sectional shape.
  • Each remaining portion of the sacrificial rail structures 22R constitutes a sacrificial pillar structure 22.
  • each sacrificial pillar structure 22 can have a rectangular horizontal cross-sectional area.
  • a row of sacrificial pillar structures 22 can be interlaced with a row of via cavities 23’ within each line trench 49.
  • an isotropic etch process is performed to laterally recess the sacrificial material strips 42 selective to the insulating strips 32, the insulating cap strips 70, and the sacrificial pillar structures 22.
  • the sacrificial material strips 42 include silicon nitride
  • the insulating strips 32 and the insulating cap strips 70 include silicon oxide
  • the sacrificial pillar structures 22 can include amorphous silicon.
  • a wet etch process employing hot phosphoric acid, a mixture of hydrofluoric acid and glycerol at an elevated temperature, or a mixture of ethylene glycol, acetic acid, nitric acid, and ammonium fluoride at an elevated temperature may be employed to laterally recess the sacrificial material strips 42 selective to the insulating strips 32, the insulating cap strips 70, and the sacrificial pillar structures 22.
  • each of the sacrificial pillar structures 22 can have a same first rectangular horizontal cross-sectional shape, and each of the via cavities 23’ can have a same second rectangular shape prior to the isotropic etch process.
  • the lateral recess distance of the isotropic etch process can be less than one half of the dimension of each sacrificial pillar structure 22 along the first horizontal direction hdl.
  • a laterally-undulating via cavity 23 is formed by lateral expansion of each via cavity 23’ at the levels of the sacrificial material strips 42.
  • Each of the laterally-undulating via cavities 23 has a vertical cross-sectional profile along vertical planes that are perpendicular to the first horizontal direction in which the respective laterally-undulating via cavity 23’ laterally protrudes at each level of the sacrificial material strips 42.
  • Each horizontal cross-sectional view of a laterally-undulating via cavities 23 at a level of a sacrificial material strip 42 includes a rectangular shape and a pair of“wing shapes” that have an areal overlap with overlying insulating strips 32 and/or underlying insulating strips 32.
  • Each rectangular shape does not have any areal overlap with overlying insulating strips 32 and/or underlying insulating strips 32.
  • Each horizontal cross-sectional view of a laterally-undulating via cavities 23 at a level of an insulating strip 32 includes only a rectangular shape.
  • Each sacrificial pillar structure 22 can have a rectangular horizontal cross-sectional shape that is invariant with translation along a vertical direction.
  • a dielectric fill material can be deposited within each of the laterally-undulating via cavities 23 by a conformal deposition process (such as low pressure chemical vapor deposition process) or a self-planarizing deposition process (such as spin coating).
  • the dielectric fill material can include a planarizable dielectric material such as undoped silicate glass, a doped silicate glass, or flowable oxide (FOX). Excess portions of the dielectric fill material can be removed from above the horizontal plane including the top surfaces of the insulating cap strips 70. Each remaining portion of the dielectric fill material constitutes a dielectric pillar structure 24.
  • Each dielectric pillar structure 24 has a laterally-undulating vertical profile in vertical cross-sectional views in vertical planes that are perpendicular to the first horizontal direction hdl.
  • Each horizontal cross-sectional view of a dielectric pillar structure 24 at a level of a sacrificial material strip 42 includes a rectangular shape and a pair of wing shapes that have an areal overlap with overlying insulating strips 32 and/or underlying insulating strips 32.
  • Each rectangular shape does not have any areal overlap with overlying insulating strips 32 and/or underlying insulating strips 32.
  • Each horizontal cross-sectional view of a dielectric pillar structure 24 at a level of an insulating strip 32 includes only a rectangular shape.
  • each sacrificial pillar structure 22 can have a rectangular horizontal cross- sectional area.
  • a row of dielectric pillar structures 24 can be interlaced with a row of sacrificial pillar structures 22 within each line trench 49.
  • a laterally alternating sequence of sacrificial pillar structures 22 and dielectric pillar structures 24 is formed within each line trench 49.
  • the sacrificial pillar structures 22 can be removed selective to the dielectric pillar structures 24, the insulating strips 32, the insulating cap strips 70, the sacrificial material strips 42, and the insulating material layer 10. If the sacrificial pillar structure 22 includes amorphous silicon, a wet etch process using hot trimethyl-2 hydroxyethyl ammonium hydroxide (“hot TMY”) or tetramethyl ammonium hydroxide (TMAH) may be used to remove the sacrificial pillar structures 22.
  • a memory opening 25 is formed in each volume from which each sacrificial pillar structure 22 is removed. In one embodiment, each of the memory openings 25 can be a rectangular memory opening having a same horizontal rectangular cross-sectional area that is invariant with translation along the vertical direction.
  • a laterally alternating sequence of memory openings 25 and dielectric pillar structures 24 can be formed within each line trench 49.
  • a two-dimensional array of memory openings 25 can be interlaced with a two-dimensional array of dielectric pillar structures 24.
  • the two-dimensional array of memory openings 25 can be a periodic two-dimensional array having a two-dimensional periodicity
  • the two-dimensional array of dielectric pillar structures 24 can be a periodic two-dimensional array having the same two-dimensional periodicity as the periodic two-dimensional array of memory openings 25.
  • continuous material layers can be sequentially deposited in the memory openings 25.
  • the continuous material layers can include, for example, an optional selector-side spacer layer 57, a selector material layer 56, an optional intermediate spacer layer 55, a memory material layer 54, an optional memory-side spacer layer 52, and a vertical bit line 60.
  • the set of the selector-side spacer layer 57, the selector material layer 56, the intermediate spacer layer 55, the memory material layer 54, and the memory-side spacer layer 52 constitutes a memory film 50.
  • the memory material layer 54 can include any non-volatile memory material that can provide two distinct resistive states depending on the history of a bias voltage thereacross.
  • the memory material layer 54 can include a resistive memory material that can be employed in resistive random access memory devices.
  • the memory material layer 54 can include a transition metal oxide material that provides different resistive states through oxygen vacancy migration (such as hafnium oxide, tantalum oxide, tungsten oxide), a transition metal oxide material that functions as a reversible thermo-chemical fuse/antifuse (such as nickel oxide), an electrochemical migration-based programmable metallization material, which is also referred to as a conductive bridging material (such as copper-doped silicon dioxide glass, silver-doped germanium selenide, or silver-doped germanium sulfide), a Schottky barrier material or a tunnel barrier material (such as a memristor material, a barrier modulated cell / vacancy- modulated conductive oxide material (e.g., titanium oxide), or a praseodymium-calcium- manganese oxide (PCMO) material), a phase change memory material (such as a chalcogenide alloy, e.g., a germanium-antimony-telluride compound), a superid
  • the memory material layer 54 includes a resistive memory material.
  • the memory material layer 54 includes the phase change memory material.
  • a“phase change memory material” refers to a material having at least two different phases providing different resistivity. The at least two different phases can be provided, for example, by controlling the rate of cooling from a heated state to provide an amorphous state having a higher resistivity and a polycrystalline state having a lower resistivity.
  • the higher resistivity state of the phase change memory material can be achieved by faster quenching of the phase change memory material after heating to an amorphous state
  • the lower resistivity state of the phase change memory material can be achieved by slower cooling of the phase change memory material after heating to the amorphous state
  • Exemplary phase change memory materials include, but are not limited to, germanium antimony telluride compounds such as Ge2Sb2Te5 (GST), germanium antimony compounds, indium germanium telluride compounds, aluminum selenium telluride compounds, indium selenium telluride compounds, and aluminum indium selenium telluride compounds. These compounds (e.g., compound semiconductor material) may be doped (e.g., nitrogen doped GST) or undoped.
  • the phase change memory material layer can include, and/or can consist essentially of, a material selected from a germanium antimony telluride compound, a germanium antimony compound, an indium germanium telluride compound, an aluminum selenium telluride compound, an indium selenium telluride compound, or an aluminum indium selenium telluride compound.
  • the thickness of the phase change memory material layer can be in a range from 1 nm to 60 nm, such as from 10 nm to 50 nm and/or from 20 nm to 40 nm, although lesser and greater thicknesses can also be employed.
  • the selector material layer 56 includes a non-Ohmic material that provides electrical connection of electrical isolation depending on the magnitude and/or the polarity of an externally applied voltage bias thereacross.
  • the selector material layer 56 includes at least one threshold switch material layer.
  • the at least one threshold switch material layer includes any suitable threshold switch material which exhibits non-linear electrical behavior, such as an ovonic threshold switch material or volatile conductive bridge.
  • the selector material layer 56 includes at least one non-threshold switch material layer, such as a tunneling selector material or diode materials (e.g., materials for p-n semiconductor diode, p-i-n semiconductor diode, Schottky diode or metal-insulator- metal diode).
  • an ovonic threshold switch is a device that does not crystallize in a low resistance state under a voltage above the threshold voltage, and reverts back to a high resistance state when not subjected to a voltage above the threshold voltage across the OTS material layer.
  • an“ovonic threshold switch material” refers to a material that displays a non-linear resistivity curve under an applied external bias voltage such that the resistivity of the material decreases with the magnitude of the applied external bias voltage. In other words, an ovonic threshold switch material is non-Ohmic, and becomes more conductive under a higher external bias voltage than under a lower external bias voltage.
  • An ovonic threshold switch material can be non-crystalline (for example, amorphous) in a high resistance state, and can remain non-crystalline (for example, remain amorphous) in a low resistance state during application of a voltage above its threshold voltage across the OTS material.
  • the OTS material can revert back to the high resistance state when the high voltage above its threshold voltage is lowered below a critical holding voltage.
  • the ovonic threshold switch material can remain non-crystalline (e.g., amorphous).
  • the ovonic threshold switch material can comprise a chalcogenide material which exhibits hysteresis in both the write and read current polarities.
  • the chalcogenide material may be a GeTe compound or a Ge-Se compound doped with a dopant selected from As, N, and C, such as a Ge-Se-As compound semiconductor material.
  • the ovonic threshold switch material layer can include a selector material layer 56 which contains any ovonic threshold switch material.
  • the selector material layer 56 can include, and/or can consist essentially of, a GeSeAs alloy, a GeTeAs, a GeSeTeSe alloy, a GeSe alloy, a SeAs alloy, a GeTe alloy, or a SiTe alloy.
  • the material of the selector material layer 56 can be selected such that the resistivity of the selector material layer 56 decreases at least by two orders of magnitude (i.e., by more than a factor of 100) upon application of an external bias voltage that exceeds a critical bias voltage magnitude (also referred to as threshold voltage).
  • a critical bias voltage magnitude also referred to as threshold voltage
  • the composition and the thickness of the selector material layer 56 can be selected such that the critical bias voltage magnitude can be in a range from 1 V to 6 V, although lesser and greater voltages can also be employed for the critical bias voltage magnitude.
  • the thickness of the selector material layer 56 can be, for example, in a range from 1 nm to 50 nm, such as from 5 nm to 25 nm, although lesser and greater thicknesses can also be employed.
  • each of the selector-side spacer layer 57, the intermediate spacer layer 55, and the memory-side spacer layer 52 is optional, and can include a material that can control conduction of electrical current thereacross at a suitable level.
  • each of the selector-side spacer layer 57, the intermediate spacer layer 55, and the memory-side spacer layer 52 can independently include any material selected from a conductive metallic nitride such as titanium nitride, tungsten or tungsten nitride, a conductive metallic carbide, selenium, tellurium, doped silicon, germanium, an elemental metal such as silver, copper, or aluminum, amorphous carbon or diamondlike carbon (DLC), carbon nitride, an intermetallic alloy or an alloy of at least one metallic element and at least one non-metallic element, an alloy of any of the preceding materials, and/or a layer stack including a plurality of the preceding materials.
  • a conductive metallic nitride such as titanium nitride,
  • Each of the selector-side spacer layer 57, the intermediate spacer layer 55, and the memory-side spacer layer 52 can have a thickness in a range from 1 nm to 30 nm, such as from 3 nm to 10 nm, although lesser and greater thicknesses can be employed for each of the selector-side spacer layer 57, the intermediate spacer layer 55, and the memory-side spacer layer 52.
  • the vertical bit line 60 includes at least one conductive material, which can comprise at least one metallic material or at least one heavily doped (conductive)
  • the vertical bit line 60 can include a metallic nitride liner 60A including a metallic nitride material (such as TiN, TaN, or WN) and a metallic fill material portion 60B including a metallic fill material (such as W, Cu, Co, Ru, or Mo).
  • a metallic nitride liner 60A including a metallic nitride material (such as TiN, TaN, or WN)
  • a metallic fill material portion 60B including a metallic fill material (such as W, Cu, Co, Ru, or Mo).
  • a planarization process can be performed to remove portions of the various material layers from above the horizontal plane including the top surface of the insulating cap strips 70.
  • the planarization process can include, for example, a recess etch process that indiscriminately etches the various material layers of the memory film 50 and the vertical bit line 60.
  • Remaining material portions of the memory film 50 and the vertical bit line 60 within each memory openings 25 can have top surfaces within the horizontal plane including the top surface of the insulating cap strips 70.
  • the set of all material portions that fills a memory opening 25 is herein referred to as a memory opening fill structure 58, which can include a memory film 50 and a vertical bit line 60.
  • each of the memory opening fill structures 58 comprises a respective vertical bit line 60.
  • a memory material portion (such as a respective portion of the memory material layer 54) is formed between each laterally neighboring pair of a sacrificial material strip 42 and a vertical bit line 60.
  • a lateral extent of an overlap between the memory material portion (such as a respective portion of the memory material layer 54) and a most proximal one of the sacrificial material strips 42 along the first horizontal direction hdl can be the same as the dimension along the first horizontal direction hdl of a tip portion of the sacrificial material strip 42 that contacts the memory film 50 (such as the selector-side spacer layer 57).
  • the lateral extent of an overlap between the memory material portion and a most proximal one of the sacrificial material strips 42 along the first horizontal direction hdl can be less than a lateral extent of the most proximal one of the memory opening fill structures 58 along the first horizontal direction hdl.
  • backside cavities 69 are formed in portions of the line trenches 49 located in the staircase region 300.
  • portions of the line trenches 49 may be filled with the same dielectric fill material as the dielectric pillar structures 24, and can be removed by a combination of lithographic patterning and an anisotropic etch process.
  • the sacrificial fill material of the sacrificial rail structures 22R can be protected in the staircase region by a patterned etch mask layer that covers the staircase region during etch processes that remove the material of the sacrificial rail structures 22R.
  • Remaining portions of the sacrificial rail structures 22R can be removed after formation of the memory opening fill structures 58 to form the backside cavities 69.
  • additional backside cavities may be formed within the memory array region 100 within areas from which material portions filling the line trenches 49 are removed.
  • Such material portions that are removed to form the additional backside trenches may include remaining portions of the sacrificial rail structures 22R or dielectric material portions having the same material composition as the dielectric pillar structures 24.
  • Sidewalls of each layer within the vertically alternating stacks (32, 42) can be physically exposed around the backside cavities 69.
  • a top surface of the insulating material layer 10 may be physically exposed at the bottom of each backside cavity 69.
  • backside recesses 43 are formed in volumes from which the sacrificial material strips 42 are removed.
  • the removal of the second material of the sacrificial material strips 42 can be selective to the first material of the insulating strips 32, the material of the retro-stepped dielectric material portion 65, the insulating material layer 10, and the material of the outermost material portions of the memory opening fill structures 58.
  • the sacrificial material strips 42 include silicon nitride
  • a wet etch process employing hot phosphoric acid can be employed to form the backside recesses 43.
  • each backside recess 43 can be a laterally extending cavity having a lateral dimension that is greater than the vertical extent of the cavity. In other words, the lateral dimension of each backside recess 43 can be greater than the height of the backside recess 43.
  • a plurality of backside recesses 43 can be formed in the volumes from which the second material of the sacrificial material strips 42 is removed.
  • the memory openings in which the memory opening fill structures 58 are formed are herein referred to as front side openings or front side cavities in contrast with the backside recesses 43.
  • each backside recess 43 can define a space for receiving a respective word line of a three-dimensional memory device.
  • Each of the plurality of backside recesses 43 can extend substantially parallel to the top surface of the substrate 9.
  • a backside recess 43 can be vertically bounded by a top surface of an underlying insulating strip 32 and a bottom surface of an overlying insulating ship 32.
  • each backside recess 43 can have a uniform height throughout.
  • a barrier layer 44 can be optionally formed.
  • the barrier layer 44 if present, comprises a conductive material, a semiconducting material, or a dielectric material that limits the electrical current through a neighboring memory material portion.
  • the barrier layer 44 can be formed in the backside recesses 43 and on a sidewall of the backside cavity 69.
  • the barrier layer 44 can be formed directly on horizontal surfaces of the insulating strips 32 and sidewalls of the memory opening fill structures 58 within the backside recesses 43.
  • the barrier layer 44 can be formed by a conformal deposition process such as atomic layer deposition (ALD).
  • ALD atomic layer deposition
  • the barrier layer 44 can include a material selected from a conductive metallic nitride such as titanium nitride, tungsten or tungsten nitride, a conductive metallic carbide, selenium, tellurium, doped silicon, germanium, an elemental metal such as silver, copper, or aluminum, amorphous carbon or diamondlike carbon (DLC), carbon nitride, an intermetallic alloy or an alloy of at least one metallic element and at least one non-metallic element, an alloy of any of the preceding materials, and/or a layer stack including a plurality of the preceding materials.
  • the thickness of the barrier layer 44 can be in a range from 1 nm to 15 nm, such as 2 to 6 nm, although lesser and greater thicknesses can also be employed.
  • At least one metallic material can be subsequently deposited in remaining volumes of the backside recesses 43.
  • the at least one metallic material can include a metallic barrier layer and a metallic fill material.
  • the metallic barrier layer includes an electrically conductive metallic material that can function as a diffusion barrier layer and/or adhesion promotion layer for a metallic fill material to be subsequently deposited.
  • the metallic barrier layer can include a conductive metallic nitride material such as TiN, TaN, WN, or a stack thereof, or can include a conductive metallic carbide material such as TiC, TaC, WC, or a stack thereof.
  • the metallic barrier layer can be deposited by a conformal deposition process such as chemical vapor deposition (CVD) or atomic layer deposition (ALD).
  • the thickness of the metallic barrier layer can be in a range from 2 nm to 8 nm, such as from 3 nm to 6 nm, although lesser and greater thicknesses can also be employed.
  • the metallic barrier layer can consist essentially of a conductive metal nitride such as TiN.
  • the metal fill material can be subsequently deposited in remaining volumes of the plurality of backside recesses 43, on the sidewalls of the at least one the backside cavity 69, and over the top surface of the insulating cap strips 70 to form a metallic fill material layer.
  • the metallic fill material can be deposited by a conformal deposition method, which can be, for example, chemical vapor deposition (CVD), atomic layer deposition (ALD), electroless plating, electroplating, or a combination thereof.
  • the metallic fill material layer can consist essentially of at least one elemental metal.
  • the at least one elemental metal of the metallic fill material layer can be selected, for example, from tungsten, cobalt, ruthenium, titanium, and tantalum.
  • the metallic fill material layer can consist essentially of a single elemental metal.
  • the metallic fill material layer can be deposited employing a fluorine-containing precursor gas such as WF6.
  • the metallic fill material layer can be a tungsten layer including a residual level of fluorine atoms as impurities.
  • the metallic fill material layer is spaced from the insulating strips 32 and the memory opening fill structures 58 by the metallic barrier layer, which is a metallic barrier layer that blocks diffusion of fluorine atoms therethrough.
  • a plurality of electrically conductive strips 46 can be formed in the plurality of backside recesses 43, and a continuous electrically conductive material strip can be formed on the sidewalls of each backside cavity 69 and over the insulating cap strips 70.
  • Each electrically conductive strip 46 includes a portion of the metallic barrier layer and a portion of the metallic fill material layer that are located between a vertically neighboring pair of dielectric material layers such as a pair of insulating strips 32.
  • the continuous electrically conductive material strip includes a continuous portion of the metallic barrier layer and a continuous portion of the metallic fill material layer that are located in the backside cavities 69 or above the insulating cap strips 70.
  • Each sacrificial material strip 42 can be replaced with an electrically conductive strip 46.
  • An elongated void is present in the portion of each backside cavity 69 that is not filled with the barrier layer 44 and the continuous electrically conductive material strip.
  • the deposited metallic material of the continuous electrically conductive material strip is etched back from the sidewalls of each backside cavity 69 and from above the insulating cap strips 70, for example, by an isotropic wet etch, an anisotropic dry etch, or a combination thereof.
  • Each remaining portion of the deposited metallic material in the backside recesses 43 constitutes an electrically conductive strip 46.
  • Each electrically conductive strip 46 can be a conductive line structure. Thus, the sacrificial material strips 42 are replaced with the electrically conductive strips 46.
  • Each electrically conductive strip 46 can function as a word line.
  • each electrically conductive strip 46 can be a word line that functions as a common electrode for the plurality of vertical memory devices.
  • the removal of the continuous electrically conductive material strip can be selective to the material of the barrier layer 44.
  • a horizontal portion of the barrier layer 44 can be present at the bottom of each backside cavity 69.
  • the removal of the continuous electrically conductive material strip may not be selective to the material of the barrier layer 44 or, the barrier layer 44 may not be employed.
  • the electrically conductive strips 46 can be formed with serration such that a serrated portion (i.e., a protruding portion) laterally extends toward each neighboring memory opening fill structure 58.
  • the width of the areal overlap between a vertical sidewall of a serrated portion of an electrically conductive strip 46 and a neighboring memory opening fill structure 58 is the same as the width of the vertical sidewall of the serrated portion of the electrically conductive strip 46, and is less than the lateral dimension of the neighboring memory opening fill structure 58 along the first horizontal direction hdl.
  • each electrically conductive strip 46 can comprise a pair of laterally undulating sidewalls that provides the feature of serration.
  • Each memory material portion can be formed as a memory material layer 54 within a respective one of the rectangular memory openings 25.
  • the center portion of the dielectric pillar structure 24 has a first lengthwise lateral extent LLE1 (i.e., a lateral distance between neighboring pairs of memory opening fill structures 58 in a line trench 49) along the first horizontal direction hdl, and each laterally protruding portion within the two vertical stacks of laterally protruding portions of the dielectric pillar structures 24 has a second lengthwise lateral extent LLE2 along the first horizontal direction that is greater than the first lengthwise lateral extent LLE1.
  • LLE1 i.e., a lateral distance between neighboring pairs of memory opening fill structures 58 in a line trench 49
  • an insulating material layer can be formed in the backside cavities 69 and over the insulating cap strips 70 by a conformal deposition process.
  • exemplary conformal deposition processes include, but are not limited to, chemical vapor deposition and atomic layer deposition.
  • the insulating material layer includes an insulating material such as silicon oxide, silicon nitride, a dielectric metal oxide, an organosilicate glass, or a combination thereof.
  • the insulating material layer can include silicon oxide.
  • the insulating material layer can be formed, for example, by low pressure chemical vapor deposition (LPCVD) or atomic layer deposition (ALD).
  • LPCVD low pressure chemical vapor deposition
  • ALD atomic layer deposition
  • the horizontal portion of the insulating material layer overlying the insulating cap strips 70 constitute a contact- level dielectric layer 80.
  • Each portion of the insulating material layer in the backside cavities 69 constitutes a backside dielectric fill structure 76.
  • Line trenches laterally extending along the second horizontal direction hd2 can be formed through the contact-level dielectric layer in areas that overlie the vertical bit lines 60. At least one conductive material can be deposited in the line trenches to form horizontally extending conductive lines, which are herein referred to as global bit lines 98.
  • the global bit lines 98 can laterally extend along the second horizontal direction hd2, and can contact a respective subset of the vertical bit lines 60. In an illustrative example, each global bit line 98 can contact a set of vertical bit line 60 that are located in every other line trench 49 and aligned along the second horizontal direction hd2.
  • Word line contact via structures 86 can be formed on the electrically conductive layers 46 through the contact level dielectric layer 80, and through the retro-stepped dielectric material portion 65. The word line contact via structures 86 provide electrical contact to each of the electrically conductive lines 46, which can function as word lines.
  • FIGS. 32A and 32B a third exemplary structure according to a third embodiment of the present disclosure is illustrated, which can be the same as the second exemplary structure illustrated in FIGS. 25A and 25B.
  • FIGS. 33A and 33B the processing steps of FIGS. 26A and 26B can be performed on the third exemplary structure.
  • rectangular memory openings 25 can be formed by removing the sacrificial pillar structures 22 selective to the dielectric pillar structures 24, the insulating strips 32, and the sacrificial material strips 42.
  • the third exemplary structure at this processing step can be the same as the second exemplary structure at the processing step of FIGS. 26 A and 26B.
  • surface portions of the sacrificial material strips 42 can be laterally recessed around each memory opening 25.
  • Each memory opening 25 can be laterally expanded at each level of the sacrificial material strips 42 to include two vertical stacks of lateral recesses 25R.
  • Each lateral recess 25R has an areal overlap with an underlying insulating strip 32 and with an overlying insulating strip 32 and/or an overlying insulating cap strip 70.
  • the surface portions of the sacrificial material strips 42 can be laterally recessed by an isotropic etch process that etches the material of the sacrificial material strips 42 selective to the materials of the insulating strips 32, the insulating cap strips 70, the dielectric pillar structures 24, and the insulating material layer 10.
  • sacrificial material strips 42 include silicon nitride
  • a wet etch process employing hot phosphoric acid, a mixture of hydrofluoric acid and glycerol at an elevated temperature, or a mixture of ethylene glycol, acetic acid, nitric acid, and ammonium fluoride at an elevated temperature may be employed to laterally recess the sacrificial material strips 42 selective to the insulating strips 32, the insulating cap strips 70, and the sacrificial pillar structures 22.
  • the lateral recess distance of the isotropic etch process at this processing step may be less than the lateral etch distance of the isotropic etch process at the processing steps of FIGS. 24 A and 24B.
  • the width of each physically exposed sidewall of the sacrificial material strips 42 that borders a respective lateral recess 25R can be less than the maximum lateral dimension of the memory opening 25 that the respective lateral recess 25R belongs to.
  • the lateral recess distance of the isotropic etch process at this processing step may be in a range from 5 nm to 200 nm, such as from 10 nm to 100 nm, although lesser and greater lateral etch distances can also be employed.
  • an optional continuous memory-side spacer layer 52L and a continuous memory material layer 54L can be formed by conformal deposition processes.
  • the continuous memory-side spacer layer 52L can have the same material composition as, and the same thickness as, the memory-side spacer layer 52 described above.
  • the continuous memory material layer 54L can have the same material composition as the memory material layer 54.
  • the thickness of the continuous memory material layer 54L can be selected such that the entire volume of each lateral recess 25R of the memory openings 25 is filled within the combination of the continuous memory-side spacer layer 52L and the continuous memory material layer 54L.
  • Each of the continuous memory-side spacer layer 52L and the continuous memory material layer 54L can be formed as a respective single continuous layer that extends over the insulating cap strips 70 and extends into each of the memory openings 25.
  • an anisotropic etch process can be performed to remove portions of the continuous memory-side spacer layer 52L and the continuous memory material layer 54L that are not masked by an overlying material portion (which can be an insulating cap strip 70 or an insulating strip 32).
  • the continuous memory-side spacer layer 52L is divided into a plurality of memory-side spacer layers 52 located within a respective one of the lateral recesses 25R.
  • the continuous memory material layer 54L is divided into a plurality of memory material portions 154. Each memory material potion 154 is a memory material portion that is formed in a respective one of the lateral recesses 25R.
  • an intermediate spacer layer 55, a selector material layer 56, and a selector-side spacer layer 57 can be sequentially formed at a periphery of the unfilled volume of each memory opening 25.
  • Each of the intermediate spacer layer 55, the selector material layer 56, and the selector-side spacer layer 57 can have the same thickness as, and the same material composition as, the in the second exemplary structure of the second embodiment.
  • At least one conductive material can be deposited within each remaining volume of the memory openings 25 on the inner sidewalls of the selector-side spacer layer 57 (or on the inner sidewalls of the selector material layer 56 in case the selector-side spacer layer 57 is omitted).
  • Portions of the at least one conductive material, the intermediate spacer layer 55, the selector material layer 56, and the selector-side spacer layer 57 that overlie the horizontal plane including the top surfaces of the insulating cap strips 70 can be removed by a planarization process. Each remaining portion of the at least one conductive material constitutes a vertical bit line 60.
  • Each contiguous combination of a memory-side spacer layer 52, a memory material portion 154, an intermediate spacer layer 55, a selector material layer 56, and a selector-side spacer layer 57 constitutes a memory film 50.
  • the set of all material portions that fills a memory opening 25 is herein referred to as a memory opening fill structure 58, which can include a memory film 50 and a vertical bit line 60.
  • Each memory opening fill structure 58 can have a first lateral extent LEI along the first horizontal direction hdl.
  • Each memory material portion 154 can have a second lateral extent LE2 along the first horizontal direction hdl that is less than first lateral extent LEI.
  • Each of the memory opening fill structures 58 comprises a respective vertical bit line 60.
  • a memory material portion 154 is formed between each laterally neighboring pair of a sacrificial material strip 42 and a vertical bit line 60.
  • a lateral extent of an overlap between the memory material portion and a most proximal one of the sacrificial material strips 42 along the first horizontal direction hdl (which can be the second lateral extend LE2) is less than a lateral extent of the most proximal one of the memory opening fill structures 58 along the first horizontal direction hdl (which can be the first lateral extend LEI).
  • a selector material portion comprising a portion of a selector material layer 56 may be located between each laterally neighboring pair of a sacrificial material strip 42 and a vertical bit line 60.
  • FIGS. 38A - 38D the processing steps of FIGS. 28A and 28B, 29A - 29C, and 30A - 30F can be subsequently performed to replace each sacrificial material strip 42 within an electrically conductive strip 46 or a combination of a portion of a barrier layer 44 and an electrically conductive strip 46.
  • the center portion of the dielectric pillar structure 24 has a first lengthwise lateral extent LLE1 (i.e., a lateral distance between neighboring pairs of memory opening fill structures 58 in a line trench 49) along the first horizontal direction hdl, and each laterally protruding portion within the two vertical stacks of laterally protruding portions of the dielectric pillar structures 24 has a second lengthwise lateral extent LLE2 along the first horizontal direction that is greater than the first lengthwise lateral extent LLE1.
  • LLE1 i.e., a lateral distance between neighboring pairs of memory opening fill structures 58 in a line trench 49
  • each laterally protruding portion within the two vertical stacks of laterally protruding portions of the dielectric pillar structures 24 has a second lengthwise lateral extent LLE2 along the first horizontal direction that is greater than the first lengthwise lateral extent LLE1.
  • the configuration of FIG. 37B makes the distance LLE2 between adjacent phase change memory material portions 154 longer, which lessens a thermal disturb
  • FIGS. 39A and 39B a fourth exemplary structure according to a fourth embodiment of the present disclosure is illustrated, which can be the same as the second exemplary structure illustrated in FIGS. 25 A and 25 B.
  • FIGS. 40A and 40B the processing steps of FIGS. 26A and 26B can be performed on the third exemplary structure.
  • rectangular memory openings 25 can be formed by removing the sacrificial pillar structures 22 selective to the dielectric pillar structures 24, the insulating strips 32, and the sacrificial material strips 42.
  • the fourth exemplary structure at this processing step can be the same as the second exemplary structure at the processing step of FIGS. 9 A and 9B.
  • FIGS. 34A and 34B the processing steps FIGS. 34A and 34B can be performed to form lateral recesses 25R by laterally recessing surface portions of the sacrificial material strips 42 around each memory opening 25.
  • Each memory openings 25 can be laterally expanded at each level of the sacrificial material strips 42 to include two vertical stacks of lateral recesses 25R.
  • the fourth exemplary structure at this processing step can be the same as the third exemplary structure at the processing steps of FIGS. 34A and 34B.
  • continuous material layers can be sequentially deposited in the memory openings 25.
  • the continuous material layers can include, for example, a continuous selector-side spacer layer 57L, a continuous selector material layer 56L, a continuous intermediate spacer layer 55L, and a continuous memory material layer 54L.
  • the continuous selector-side spacer layer 57L can have the same material composition and the same thickness as the selector-side spacer layer 57 described above.
  • the continuous selector material layer 56L can have the same material composition and the same thickness as the selector material layer 56 described above.
  • the continuous intermediate spacer layer 55L can have the same material composition and the same thickness as the intermediate spacer layer 55 described above.
  • the continuous memory material layer 54L can have the same material composition and the same thickness as the memory material layer 54 described above.
  • an anisotropic etch process can be performed to remove portions of the continuous selector-side spacer layer 57L, the continuous selector material layer 56L, the continuous intermediate spacer layer 55L, and the continuous memory material layer 54L that are not masked by an overlying material portion (which can be an insulating cap strip 70 or an insulating strip 32).
  • the continuous selector-side spacer layer 57L is divided into a plurality of selector-side spacer layers 157 located within a respective one of the lateral recesses 25R.
  • the continuous selector material layer 56L is divided into a plurality of selector material layers 156 located within a respective one of the lateral recesses 25R.
  • the continuous intermediate spacer layer 55L is divided into a plurality of intermediate spacer layers 55 located within a respective one of the lateral recesses 25R.
  • the continuous memory material layer 54L is divided into a plurality of memory material portions 154 located within a respective one of the lateral recesses 25R. Each memory material potion 154 is formed in a respective one of the lateral recesses 25R.
  • Each unfilled volume of a memory opening 25 can have a rectangular horizontal cross-sectional shape that is invariant with translation along the vertical direction.
  • the selector material portion 156 is clam-shaped, encloses a respective one of the memory material portions 154, and is located between a respective laterally neighboring pair of a vertical bit line 60 and a sacrificial material strip 42.
  • a memory-side spacer layer 52 can be sequentially formed at a periphery of the unfilled volume of each memory opening 25.
  • the memory-side spacer layer 52 can have the same material composition and the same thickness as in the second exemplary structure.
  • At least one conductive material can be deposited within each remaining volume of the memory openings 25 on the inner sidewalls of the memory-side spacer layer 52 (or on the inner sidewalls of a set of material portions including a selector-side spacer layer 157, a selector material layer 156, an intermediate spacer layer 155, a memory material portion 154 in case the memory-side spacer layer 52 is omitted).
  • Portions of the at least one conductive material and the memory-side spacer layer 52 that overlie the horizontal plane including the top surfaces of the insulating cap strips 70 can be removed by a planarization process. Each remaining portion of the at least one conductive material constitutes a vertical bit line 60.
  • Each contiguous combination of selector-side spacer layers 157, selector material layers 156, intermediate spacer layers 155, memory material portions 154, and a memory- side spacer layer 52 constitutes a memory film 50.
  • the set of all material portions that fills a memory opening 25 is herein referred to as a memory opening fill structure 58, which can include a memory film 50 and a vertical bit line 60.
  • Each memory opening fill structure 58 can have a first lateral extent LEI along the first horizontal direction hdl.
  • Each memory material portion 154 can have a second lateral extent LE2 along the first horizontal direction hdl that is less than first lateral extent LEI.
  • Each of the memory opening fill structures 58 comprises a respective vertical bit line 60.
  • a memory material portion (such as a memory material portion 154) is formed between each laterally neighboring pair of a sacrificial material strip 42 and a vertical bit line 60.
  • a lateral extent of an overlap between the memory material portion and a most proximal one of the sacrificial material strips 42 along the first horizontal direction hdl (which can be the second lateral extend LE2) is less than a lateral extent of the most proximal one of the memory opening fill structures 58 along the first horizontal direction hdl (which can be the first lateral extend LEI).
  • a selector material portion 156 may be located between each laterally neighboring pair of a sacrificial material strip 42 and a vertical bit line 60.
  • FIGS. 45A - 45D the processing steps of FIGS. 28A and 28B, 29A - 29C, and 30A - 30F can be subsequently performed to replace each sacrificial material strip 42 within an electrically conductive strip 46 or a combination of a portion of a barrier layer 44 and an electrically conductive strip 46.
  • the center portion of the dielectric pillar structure 24 has a first lengthwise lateral extent LLE1 (i.e., a lateral distance between neighboring pairs of memory opening fill structures 58 in a line trench 49) along the first horizontal direction hdl, and each laterally protruding portion within the two vertical stacks of laterally protruding portions of the dielectric pillar structures 24 has a second lengthwise lateral extent LLE2 along the first horizontal direction that is greater than the first lengthwise lateral extent LLE1.
  • LLE1 i.e., a lateral distance between neighboring pairs of memory opening fill structures 58 in a line trench 49
  • a three-dimensional memory device which comprises: vertically alternating stacks of insulating strips 32 and electrically conductive strips 46 that overlie a substrate 9 and are laterally spaced apart from each other by line trenches 49 that laterally extend along a first horizontal direction hdl, and laterally alternating sequences of memory opening fill structures 58 and dielectric pillar structures 24 located within a respective one of the line trenches 49.
  • Each memory opening fill structure 58 comprises a respective vertical bit line 60 and a memory material portion (54, 154).
  • the memory material portion (54, 154) is located between the vertical bit line 60 and a respective electrically conductive strip 46.
  • the insulating strips 32 and the electrically conductive strips 46 laterally extend along the first horizontal direction hdl, and the vertically alternating stacks (32, 46) are laterally spaced apart along a second horizontal direction hd2 that is perpendicular to the first horizonal direction hdl.
  • a lateral extent of an overlap between the memory material portion(54, 154) and a most proximal one of the electrically conductive strips 46 along the first horizontal direction hdl is less than a lateral extent along the first horizontal direction hdl of the memory opening fill structure 58 containing the memory material portion (54, 154).
  • the electrically conductive strips 46 comprise serrated electrically conductive strips.
  • Each of the serrated electrically conductive strips 46 comprises a pair of laterally undulating sidewalls, and each undulating sidewall of the electrically conductive strips 46 comprises a lateral repetition of recessed segments contacting a respective one of the dielectric pillar structures 24, and comprises laterally protruding segments contacting a respective one of the memory opening fill structures 58.
  • Each laterally protruding segment has a lateral extend that is smaller than a lateral extent of the memory opening fill structure 58.
  • each of the dielectric pillar structures 24 comprises: a center portion extending from the substrate 9 to a height of topmost electrically conductive strips of the vertically alternating stacks (32, 46) and contacting a respective subset of the insulating strips 32 of the vertically alternating stacks (32, 46); and two vertical stacks of laterally protruding portions (i.e., wing-shaped portions) that contact a respective subset of the recessed segments of the undulating sidewalls of the electrically conductive strips 46.
  • each of the dielectric pillar structures 24 in the respective one of the line trenches 49 has a greater lateral extent along the second horizontal direction hd2 than each memory opening fill structure 58 in the same line trench at each level of the electrically conductive strips 46, and has a same lateral extent along the second horizontal direction hd2 as each memory opening fill structure 58 in the same line trench 49.
  • each of the dielectric pillar structures 24 comprises four vertically-extending convex surfaces at each level of the electrically conductive strips 46.
  • each recessed segment of the electrically conductive strips 46 is adjoined to a respective one of the protruding segments of the electrically conductive strips 46 via a concave sidewall of a respective one of the electrically conductive strips 46.
  • the memory material portions (54, 154) comprise phase change memory material portions, and the electrically conductive strips 46 comprise word lines.
  • each of the memory opening fill structures 58 comprises a selector material layer 56 that laterally surrounds the vertical bit line 60.
  • the vertical bit line 60 in a respective one of the memory opening fill structures 58 has a pair of first straight sidewalls extending along the first horizontal direction hdl and a pair of second straight sidewalls extending along the second horizontal direction hd2 (i.e., having a rectangular horizontal cross-sectional shape); and a lateral extent of each vertical bit line 60 along the first horizontal direction hdl is greater than a lateral extent of any one of the memory material portions 154 in the same memory opening fill structure 58.
  • each of the memory material portions 154 in a respective one of the memory fill opening structures 58 has a trapezoidal horizontal cross-sectional profile in which a width (measured along the first horizontal direction hdl) of a respective memory material portion 154 decreases with a lateral distance from a most proximal one of the electrically conductive strips 46 toward a most proximal one of the vertical bit lines 60 in the same memory opening fill structure 58.
  • each of the memory opening fill structures 58 further comprises a memory-side spacer layer 52 that laterally surrounds a respective vertical bit line 60.
  • each of the memory opening fill structures 58 further comprises a selector material portion (which may be a discrete selector material portion 156 or a portion of a selector material layer 56) is disposed between each laterally neighboring pair of the memory material portion 154 and the vertical bit line 60.
  • a selector material portion (which may be a discrete selector material portion 156 or a portion of a selector material layer 56) is disposed between each laterally neighboring pair of the memory material portion 154 and the vertical bit line 60.
  • the selector material portion comprises a portion of a selector material layer 56 provided within a respective one of the memory opening fill structures 58.
  • the selector material portion 156 is clam-shaped, encloses a respective one of the memory material portions 154, and is located between a respective laterally neighboring pair of a vertical bit line 60 and an electrically conductive strip 46.
  • each region in which an outer surface of a memory material potion (54, 154) has an areal overlap (as measured in a vertical plane) with a most proximal sidewall surface of the electrically conductive strips 46 is less than the maximum lateral extent of a vertical bit line 60 adjacent to the memory material portion (54, 154).
  • the transition from a low resistive crystalline phase to a high resistive amorphous phase occurs faster due the thermal energy, and enables the device operation quicker.
  • the local current density increase only in the phase change memory material may also reduce the supply voltage for the memory device chip. This reduces the device power consumption and reduces the required size of the driver transistor(s).
  • this also makes the distance between adjacent phase change memory material portions, which lessens the thermal disturb effect between the adjacent phase change memory material portions.

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Abstract

L'invention concerne un matériau de mémoire à changement de phase et une ligne de bit verticale qui sont formés à l'intérieur de chacune des ouvertures de mémoire qui s'étendent à travers un empilement alterné de couches isolantes et de couches de matériau sacrificiel. Le matériau de mémoire à changement de phase peut être formé sous la forme d'un empilement vertical de parties de matériau de mémoire à changement de phase annulaire discret, ou peut être formé sous la forme d'une couche de matériau de mémoire à changement de phase continue. Chacune de la couche de matériau sacrificiel peut être remplacée par une couche électriquement conductrice. En variante, des séquences alternées latéralement de structures de remplissage d'ouverture de mémoire et de structures de pilier diélectrique sont formées à l'intérieur des tranchées de ligne formées à travers une séquence alternée verticalement de couches isolantes et de couches de matériau sacrificiel. Les bandes de matériau sacrificiel sont remplacées par des bandes électriquement conductrices.
PCT/US2020/021868 2019-06-13 2020-03-10 Dispositif de mémoire tridimensionnel comprenant des trajets de courant rétrécis et leurs procédés de fabrication WO2020251637A1 (fr)

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