WO2020245950A1 - Electrical conduction structure and power semiconductor module - Google Patents

Electrical conduction structure and power semiconductor module Download PDF

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Publication number
WO2020245950A1
WO2020245950A1 PCT/JP2019/022379 JP2019022379W WO2020245950A1 WO 2020245950 A1 WO2020245950 A1 WO 2020245950A1 JP 2019022379 W JP2019022379 W JP 2019022379W WO 2020245950 A1 WO2020245950 A1 WO 2020245950A1
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WO
WIPO (PCT)
Prior art keywords
wire
block
energization
members
energizing
Prior art date
Application number
PCT/JP2019/022379
Other languages
French (fr)
Japanese (ja)
Inventor
慶和 矢次
和丈 門脇
塩田　裕基
邦彦 田尻
松田　哲也
哲男 本宮
重人 藤田
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to JP2019561190A priority Critical patent/JP6647479B1/en
Priority to PCT/JP2019/022379 priority patent/WO2020245950A1/en
Priority to DE112019007398.2T priority patent/DE112019007398T5/en
Publication of WO2020245950A1 publication Critical patent/WO2020245950A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips

Definitions

  • the present invention relates to an energized structure and a power semiconductor module.
  • an energization structure composed of a base plate, a cover plate, a pressure welding unit, and a semiconductor chip.
  • the pressure welding unit and the semiconductor chip are pressure-welded to the base plate and the cover plate to form an energization path.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2018-56244
  • Patent Document 1 describes a pressure welding unit including a conductive plate-shaped member (electrode) and a plurality of pressure-welding members fixed to the plate-shaped member and expandable and contractible along a connection direction to the plate-shaped member. ing.
  • the pressure contact member includes a conductive first current-carrying portion extending along the expansion and contraction direction of the pressure-welding member and a second current-carrying portion that is slidably contacted with the surface of the first current-carrying portion and is fixed to the plate-shaped member. , It is provided with one or more spring members which are held by the first energizing portion and can be expanded and contracted along the expansion and contraction direction.
  • a plurality of semiconductor chips supply electric power. If some semiconductor chips malfunction, a large current (several hundreds of kA) may flow through the power semiconductor module. When a large current flows, the large current has a damped oscillating waveform, so that the heat generation density is locally increased in the first energized portion and the second energized portion due to the skin effect. As a result, an arc may be generated by melting the first energized portion and the second energized portion. Then, this arc may destroy the power semiconductor module.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a current-carrying structure capable of suppressing local heat generation depending on an electric current and suppressing deformation and destruction by magnetic attraction. It is to provide a equipped power semiconductor module.
  • the energization structure of the present invention includes a first energization block, a second energization block, and a plurality of wire-like members.
  • the second energizing block faces the first energizing block.
  • the plurality of wire-like members are connected to the first energizing block and the second energizing block, have conductivity, and have a non-linear shape.
  • the plurality of wire-like members include a pair of wire-like members arranged so as to face each other with the first energization block and the second energization block interposed therebetween.
  • Each of the pair of wire-like members includes a first fixing portion fixed to the first energizing block and a second fixing portion fixed to the second energizing block.
  • the linear distance between the first fixing portion and the second fixing portion is shorter than the length of the portion between the first fixing portion and the second fixing portion of each of the pair of wire-like members.
  • the energization structure of the present invention it is possible to alleviate the epidermis effect by a plurality of wire-like members and suppress the local increase in heat generation density. Further, since the linear distance between the first fixed portion and the second fixed portion is shorter than the length of the portion between the first fixed portion and the second fixed portion of each of the pair of wire-like members, magnetic attraction is performed. It is possible to prevent each of the pair of wire-like members from being deformed and destroyed by the force.
  • FIG. 6 is a cross-sectional view taken along the line VII-VII of FIG. It is sectional drawing which shows the state which the terminal of the chip unit of FIG. 7 is short-circuited.
  • FIG. 6 It is sectional drawing at the position along the IX-IX line of FIG. 6 which shows the modification 1 of the chip unit which concerns on Embodiment 2.
  • FIG. 9 which shows the modification 2 of the chip unit which concerns on Embodiment 2.
  • FIG. 9 is sectional drawing at the position corresponding to FIG. 9 which shows the modification 3 of the chip unit which concerns on Embodiment 2.
  • FIG. It is a perspective view which shows typically an example of the wire-like member of the modification 4 of the chip unit which concerns on Embodiment 2.
  • FIG. It is a perspective view which shows another example of the wire-like member of the modification 4 of the chip unit which concerns on Embodiment 2.
  • Embodiment 1. 1 to 4 are diagrams showing the configuration of the power semiconductor module according to the first embodiment.
  • FIG. 1 is an external perspective view for showing the configuration of the power semiconductor module according to the first embodiment.
  • FIG. 2 is a perspective view for showing the configuration of the chip unit according to the first embodiment.
  • FIG. 3 is a cross-sectional view taken along the line III-III of FIG. 2 for showing the configuration of the chip unit according to the first embodiment.
  • FIG. 4 is a cross-sectional view taken along the line IV-IV of FIG. 2 for showing the configuration of the chip unit according to the first embodiment.
  • the X-axis arrow direction of the power semiconductor module in FIG. 1 is the + X direction
  • the opposite is the -X direction
  • the Y-axis arrow direction is the + Y direction
  • the opposite is the -Y direction
  • the Z-axis arrow direction is the + Z direction
  • the opposite is the opposite. -Z direction.
  • the configuration of the power semiconductor module 100 according to the first embodiment will be described with reference to FIG.
  • a part of the conductive cover plate 3 is not shown, and the hole portion of the first energizing block is also not shown.
  • two submodules 101 are arranged in each of the vertical direction and the horizontal direction.
  • the number of submodules 101 is not limited to four, and may be any other number.
  • a plurality of types of power semiconductor chips such as switching chips, freewheel diode chips, and wide bandgap chips are used in the submodule 101. These power semiconductor chips are collectively referred to as semiconductor chips.
  • the sub-module 101 is formed with an energization path for synthesizing nine chip units 10.
  • the submodule 101 includes a conductive base plate 2, a conductive cover plate 3, a chip unit 10, and a metal plate 6.
  • the conductive base plate 2 is formed in a substantially flat plate shape.
  • the conductive cover plate 3 is formed in a substantially flat plate shape.
  • the conductive base plate 2 and the conductive cover plate 3 are arranged vertically.
  • the conductive cover plate 3 is arranged on the conductive base plate 2.
  • the chip unit 10 is arranged between the conductive base plate 2 and the conductive cover plate 3.
  • the chip unit 10 includes a semiconductor chip 4.
  • the semiconductor chip 4 is located below the chip unit 10.
  • the metal plate 6 is located below the semiconductor chip 4.
  • the sub-module 101 includes a resin frame 5.
  • the resin frame 5 has an effect of positioning the conductive base plate 2 and the conductive cover plate 3. Further, the resin frame 5 has the effect of a spacer between the conductive base plate 2 and the conductive cover plate 3.
  • the power semiconductor module 100 shown in FIG. 1 constitutes an energization path for synthesizing four submodules 101.
  • the chip unit 10 constitutes an energization path between the conductive base plate 2 and the conductive cover plate 3.
  • the chip unit 10 electrically connects the conductive base plate 2 and the conductive cover plate 3 by the pressure contact force from the conductive cover plate 3.
  • a connection member for a signal (not shown) is arranged inside the sub-module in addition to the pressure welding member. There is. One end of the connecting member is connected to the signal terminal of the semiconductor chip 4, and the other end is connected to the emitter signal board.
  • the semiconductor chip 4 is arranged on the conductive base plate 2 via the metal plate 6.
  • the semiconductor chip 4 is formed in a flat plate shape.
  • An electrode 4a is provided on the surface of the semiconductor chip 4 on the + Z direction side.
  • the electrode 4a is electrically connected to the second energizing block 12.
  • Each of the conductive base plate 2 and the conductive cover plate 3 is formed using, for example, surface-treated pure copper. Pressure is applied to the surface of the conductive cover plate 3 on the + Z direction side in the ⁇ Z direction. This pressure causes the chip unit 10 to come into pressure contact with the conductive base plate 2. As a result, the conductive base plate 2 is electrically connected to the conductive cover plate 3 via the chip unit 10.
  • the chip unit 10 includes an energizing structure 1 and a semiconductor chip 4.
  • the semiconductor chip 4 is electrically connected to the energizing structure 1.
  • the energization structure 1 includes a first energization block 11, a second energization block 12, and a plurality of wire-like members 53.
  • the energization structure 1 is configured to maintain energization in a state where pressure is applied so that the first energization block 11 and the second energization block 12 come close to each other.
  • the first energizing block 11 and the second energizing block 12 have conductivity.
  • the second energizing block 12 faces the first energizing block 11.
  • the plurality of wire-like members 53 are connected to the first energizing block 11 and the second energizing block 12.
  • the plurality of wire-shaped members 53 extend in the direction in which the first energizing block 11 and the second energizing block 12 face each other.
  • the plurality of wire-like members have conductivity.
  • the plurality of wire-like members 53 are low resistance conductors.
  • the plurality of wire-like members 53 include wire-like members 53a to 53f.
  • the wire-like members 53a to 53f will be referred to as the first wire-like member 53a to the sixth wire-like member 53f as appropriate.
  • the first wire-shaped member 53a to the sixth wire-shaped member 53f are each configured to have the same shape.
  • the first energizing block 11, the second energizing block 12, and the plurality of wire-like members 53 are formed by using, for example, surface-treated pure copper.
  • the thickness of each of the plurality of wire-like members 53 is thinner than the thickness of the first energizing block 11.
  • the first energizing block 11 is formed in a regular hexagonal columnar shape.
  • the first energizing block 11 has a regular hexagonal shape when viewed from the ⁇ Z direction.
  • the first energizing block 11 is formed in a plate shape.
  • the first energization block 11 is provided with a hole 11a.
  • the hole 11a is formed in a circular shape.
  • the hole portion 11a penetrates the first energizing block 11 in the direction in which the second energizing block 12 faces the first energizing block 11 ( ⁇ Z direction).
  • the hole portion 11a is arranged in the center of the first energizing block 11 when viewed from the ⁇ Z direction.
  • the second energizing block 12 is configured to have a stepped shape.
  • the second energizing block 12 includes a root portion 12a and an overhanging portion 12b.
  • the root portion 12a is arranged on the ⁇ Z direction side of the second energizing block 12.
  • the root portion 12a is formed in a square columnar shape.
  • the root portion 12a is formed in a plate shape.
  • the overhanging portion 12b is arranged on the + Z direction side of the second energizing block 12.
  • the overhanging portion 12b is formed in a regular hexagonal columnar shape.
  • the second energizing block 12 has a regular hexagonal shape when viewed from the ⁇ Z direction.
  • the second energizing block 12 is formed in a plate shape.
  • the regular hexagons of the overhanging portions 12b of the first energizing block 11 and the second energizing block 12 are congruent.
  • the sides of each of these regular hexagons are arranged so that they are parallel to each other.
  • the line segment (center line CL) connecting the center CP of the first energization block 11 and the center CP of the second energization block 12 when viewed from the ⁇ Z direction is arranged so as to be substantially parallel to the Z axis. ..
  • the shapes of the plurality of wire-like members 53 will be described with reference to FIGS. 3 and 4.
  • the plurality of wire-like members 53 have a non-linear shape. That is, each of the plurality of wire-like members 53 is bent or curved rather than linear.
  • the plurality of wire-like members 53 include a pair of wire-like members 53 arranged so as to face each other with the first energization block 11 and the second energization block 12 interposed therebetween.
  • the pair of wire-like members 53 are, for example, a first wire-like member 53a and a fourth wire-like member 53d.
  • the shapes of the plurality of wire-like members 53 will be described mainly using the first wire-like member 53a and the fourth wire-like member 53d.
  • first wire-like member 53a and the fourth wire-like member 53d are fixed to the first energization block 11.
  • the other ends of the first wire-shaped member 53a and the fourth wire-shaped member 53d are fixed to the second energizing block 12.
  • Each of the pair of wire-shaped members 53 includes a first fixing portion F1 fixed to the first energizing block 11 and a second fixing portion F2 fixed to the second energizing block 12.
  • Each of the pair of wire-like members 53 includes a portion F3 between the first fixing portion F1 and the second fixing portion F2.
  • the linear distance between the first fixed portion F1 and the second fixed portion F2 is shorter than the length of the portion F3 between the first fixed portion F1 and the second fixed portion F2 of each of the pair of wire-like members 53. ..
  • the portion F3 between the first fixing portion F1 and the second fixing portion F2 of each of the pair of wire-shaped members 53 is deformed so as to protrude between the first energizing block 11 and the second energizing block 12.
  • the portions F3 between the first fixing portion F1 and the second fixing portion F2 of each of the pair of wire-like members 53 are configured to be in direct contact with each other.
  • the portion F3 between the first fixing portion F1 and the second fixing portion F2 of each of the pair of wire-like members 53 protrudes between the first energizing block 11 and the second energizing block 12 by a magnetic attraction force and mutually. It is configured to be connected.
  • the width of the portion F3 between the first fixing portion F1 and the second fixing portion F2 of each of the pair of wire-like members 53 is narrower than the width of each of the first fixing portion F1 and the second fixing portion F2.
  • Each of the plurality of wire-shaped members 53 is arranged on the same circular VC centered on the center line CL passing through the center CP of each of the first energization block 11 and the second energization block 12. That is, the radial distances of the same circle VC from each of the plurality of wire-shaped members 53 and the center line CL are equal to each other.
  • Each of the plurality of wire-like members 53 is arranged at an equal angle with respect to the center line CL on the same circular VC. When the plurality of wire-like members 53 are six, each of the plurality of wire-like members 53 is evenly arranged at an angle of 60 degrees with respect to the center line CL.
  • the cross section of the portion F3 between the first fixing portion F1 and the second fixing portion F2 of each of the plurality of wire-shaped members 53 is rectangular.
  • the long sides of this rectangle are arranged on the same circle VC.
  • the long sides of this rectangle are arranged along the tangent of the same circle VC.
  • the central CP of the second energizing block 12 overlaps the central CP of the first energizing block 11 in the + Z direction.
  • the short sides of this rectangle are arranged along a line connecting the center and the contact point of the same circle VC.
  • the short sides of this rectangle are arranged so as to be orthogonal to the long sides.
  • the long side is configured to be about 4 times or more and 8 times or less the length of the short side.
  • the short side is preferably 2 mm or less, and more preferably 1 mm or less so that each of the plurality of wire-like members 53 has elasticity in the short side direction.
  • the first wire-like member 53a extends in the ⁇ Z direction from the first fixing portion F1 fixed to the side surface of the first energizing block 11, and is bent and extended in the + X direction at an angle of approximately 90 degrees. After that, the first wire-like member 53a is bent and stretched in the ⁇ Z direction at an angle of approximately 90 degrees, and then bent and stretched in the ⁇ X direction at an angle of approximately 90 degrees. After that, it is bent and stretched in the ⁇ Z direction at an angle of about 90 degrees, and is fixed to the side surface of the second energizing block 12 by the second fixing portion F2.
  • the shape of the portion F3 between the first fixing portion F1 and the second fixing portion F2 of the first wire-like member 53a is formed line-symmetrically with respect to the line VL passing through the center of the shape of the portion in the + Z direction. There is.
  • the line VL is arranged equidistantly and parallel to each of the surface of the first energizing block 11 on the ⁇ Z direction side and the surface of the second energizing block 12 on the + Z direction side.
  • the fourth wire-shaped member 53d is arranged point-symmetrically with the first wire-shaped member 53a with respect to the center line CL passing through the center CP of each of the regular hexagons of the first energizing block 11 and the second energizing block 12. ..
  • the total length of the bent shape in the portion F3 between the first fixing portion F1 and the second fixing portion F2 of the first wire-like member 53a is the dimension of the total length of the bent shape from the side surface of the first energizing block 11 to the center of the first energizing block 11. It is provided so as to be equal to or slightly longer than the sum of the dimension of twice the distance to the CP and the dimension of the distance in the + Z axis direction from the first energizing block 11 to the second energizing block 12. ing.
  • the dimension of the distance from the first energizing block 11 to the second energizing block 12 in the + Z axis direction is the dimension when the power semiconductor module 100 is assembled.
  • the second wire-like member 53b, the third wire-like member 53c, the fifth wire-like member 53e, and the sixth wire-like member 53f will be described.
  • the second wire-like member 53b and the fifth wire-like member 53e are paired.
  • the shape and positional relationship of the second wire-like member 53b and the fifth wire-like member 53e are the same as the shape and positional relationship of the first wire-like member 53a and the fourth wire-like member 53d.
  • the third wire-like member 53c and the sixth wire-like member 53f are paired.
  • the shape and positional relationship of the third wire-like member 53c and the sixth wire-like member 53f are the same as the shape and positional relationship of the first wire-like member 53a and the fourth wire-like member 53d.
  • the root portion 12a of the second energizing block 12 comes into contact with the electrode 4a of the semiconductor chip 4, so that the second energizing block 12 is electrically connected to the semiconductor chip 4.
  • the operation of the power semiconductor module 100 according to the first embodiment will be described.
  • the power semiconductor module 100 according to the first embodiment is for providing high reliability when the semiconductor chip 4 fails. For example, consider a case where a semiconductor chip 4 fails and only one semiconductor chip 4 is short-circuited.
  • the power semiconductor module 100 is used in a system such as a power converter.
  • the power semiconductor module 100 is regarded as a mere resistor, the system in which the power semiconductor module 100 is used is equivalent to a simple RLC series circuit.
  • a plurality of semiconductor chips 4 are incorporated in parallel in the power semiconductor module 100.
  • the first wire-like member 53a to the sixth wire-like member 53f used in the chip unit 10 are formed of surface-treated copper. It is known that when an AC current flows through a conductor, the current density increases on the surface of the conductor and decreases toward the inside away from the surface, which is called the epidermis effect. The distance at which the current becomes 1 / e of the current flowing on the conductor surface is called the skin depth. For example, in the case of copper wire, the skin depth is about 1 mm with respect to an alternating current of 4 to 5 kHz.
  • FIG. 5 is a cross-sectional view taken along the line III-III of FIG. 2 when only one element of the semiconductor chip 4 is short-circuited.
  • a large current flows in the same direction through the pair of the first wire-shaped member 53a and the fourth wire-shaped member 53d, so that a large attractive force acts on each of them. Therefore, the first wire-like member 53a and the fourth wire-like member 53d are greatly deformed in the central direction of the first energization block 11.
  • the first wire-like member 53a and the fourth wire-like member 53d are the conductive base plate 2, the fourth wire-like member facing each other (the fourth wire-like member 53d for the first wire-like member 53a), and the conductive cover, respectively.
  • first wire-shaped member 53a to the sixth wire-shaped member 53f each maintain the deformed shape and maintain the energization of the chip unit 10.
  • first wire-like member 53a and the fourth wire-like member 53d are deformed by the magnetic attraction force, the first energization block 11 and the second energization block 12 are in the height direction (the second energization block 12 is They are in continuous contact with each other in the direction facing the first energization block 11).
  • the length of the continuous portion of the first wire-like member 53a and the fourth wire-like member 53d is the length of the first wire-like member 53a and the fourth wire-like member 53d between the first energization block 11 and the second energization block 12. Occupies most of the length of the wire.
  • the energization structure 1 it is possible to alleviate the skin effect by the plurality of wire-like members 53 and suppress the local increase in heat generation. That is, even if only one of the plurality of semiconductor chips 4 mounted on the power semiconductor module 100 is short-circuited due to a failure and a large current is generated in the chip unit 10, the chip unit 10 is the first. Since a plurality of electric current paths having a small cross section are provided as in the wire-shaped members 53a to the sixth wire-shaped member 53f, the skin effect can be suppressed. Therefore, it is possible to suppress the phenomenon that the heat generation density is locally increased due to the occurrence of remarkable density of the current density distribution. By suppressing the phenomenon that the heat generation density is locally increased, it is possible to suppress the temperature rise of the first wire-like member 53a to the sixth wire-like member 53f.
  • the power semiconductor module 100 may be destroyed. Suppressing the dissolution of the first wire-like member 53a to the sixth wire-like member 53f leads to suppressing the destruction of the power semiconductor module 100. Therefore, by suppressing the melting of the first wire-like member 53a to the sixth wire-like member 53f, the power semiconductor module 100 provided with the energization structure 1 having high reliability becomes possible.
  • the linear distance between the first fixed portion F1 and the second fixed portion F2 is based on the length of the portion F3 between the first fixed portion F1 and the second fixed portion F2 of each of the pair of wire-like members 53. Is also short, so it is possible to prevent each of the pair of wire-like members 53 from being deformed and destroyed by the magnetic attraction.
  • the portion F3 between the first fixing portion F1 and the second fixing portion F2 of each of the pair of wire-shaped members 53 is in a state of being projected and deformed between the first energizing block 11 and the second energizing block 12. It is configured to be in direct contact with each other and has a continuous portion that is in continuous contact in the height direction. Therefore, it is possible to prevent each of the pair of wire-like members 53 from being deformed and destroyed by the magnetic attraction.
  • the portions F3 between the first fixed portion F1 and the second fixed portion F2 are point-symmetrical with respect to the center line CL. Is located in.
  • the total length of the bent shape in the portion F3 between the first fixed portion F1 and the second fixed portion F2 is the distance from the side surface of the first energized block 11 to the center CP of the first energized block 11. It is provided so as to be equal to or slightly longer than the sum of the double dimension and the dimension of the distance in the + Z axis direction from the first energizing block 11 to the second energizing block 12.
  • the second wire-like member 53b and the fifth wire-like member 53e, and the third wire-like member 53c and the sixth wire-like member 53f are paired with each other.
  • the second wire-like member 53b and the fifth wire-like member 53e, and the third wire-like member 53c and the sixth wire-like member 53f are point-symmetrical and have a sufficient length for deformation with respect to magnetic attraction. Therefore, even if they are deformed, the first wire-shaped members 53a to the sixth wire-shaped members 53f are displaced toward the central CPs of the first energizing block 11 and the second energizing block 12, and they interfere with each other and deform. Is suppressed.
  • the cross section of the portion F3 between the first fixed portion F1 and the second fixed portion F2 of each of the first wire-shaped member 53a to the sixth wire-shaped member 53f is rectangular, and the long side of the rectangle is the first energizing block. It is arranged on the same circle VC centered on the center line CL passing through the center CP of the 11 and the second energization block 12. For example, consider a leaf spring shape with a rectangular cross section. In a rectangular cross section, the long side is less likely to be deformed than the short side due to the moment of inertia of area.
  • each of the first wire-like member 53a to the sixth wire-like member 53f is a first energization block while suppressing the influence of the adjacent wire-like member 53. It is possible to displace the 11 and the second energization block 12 toward the center side. Therefore, it is possible to suppress unnecessary displacement in the long side direction.
  • the plurality of wire-like members 53 include an even number of first wire-like members 53a to sixth wire-like members 53f. Since the first wire-like member 53a to the sixth wire-like member 53f are composed of an even number of wires, the positions are opposed to the center line CL passing through the center CP of the first energization block 11 and the second energization block 12. Since the pair of wire-shaped members 53 can be arranged, the direction of displacement can be suppressed in one direction.
  • first wire-like member 53a to the sixth wire-like member 53f are arranged on the same circular VC centered on the center line CL passing through the center CP of the first energization block 11 and the second energization block 12, and are the same. It is arranged at an equal angle with respect to the center line CL on the circle VC. Therefore, it is possible to reduce the influence of the adjacent wire-shaped member 53.
  • the first wire-like member 53a to the sixth wire-like member 53f project in a direction away from the center line CL passing through the center CP of the first energization block 11 and the second energization block 12. It was. However, as will be described later, the first wire-like member 53a to the sixth wire-like member 53f have a plurality of bent portions and a plurality of curvatures, and the central CP of the first energization block 11 and the second energization block 12 is provided. It is possible to obtain the same effect by providing a shape protruding toward the center line CL passing through.
  • the amount of displacement during energization is suppressed when the first wire-like member 53a to the sixth wire-like member 53f protrudes toward the center line CL passing through the center CP of the first energization block 11 and the second energization block 12. Therefore, it is possible to reduce the stress generated when the wire-shaped member 53 is deformed when energized. Therefore, a more reliable power semiconductor module 100 becomes possible. Further, if the first wire-like member 53a to the sixth wire-like member 53f have a shape protruding toward the center line CL passing through the center CP of the first energization block 11 and the second energization block 12, the chip unit 10 can be downsized. Is also possible.
  • the first embodiment an example in which a plurality of wire-like members are composed of six is shown.
  • the number is even and even, the larger the number, the more the skin effect can be suppressed, so that the phenomenon of locally increasing heat generation density can be suppressed.
  • the number of wire-like members is 16 or less, but it is possible to further increase the number depending on the size of the chip unit 10.
  • the wire-like member can be an odd number, but an even number is preferable. Even if the wire-like members are odd-numbered, if they are evenly arranged, the force acts evenly in the center due to the resultant force.
  • the first energizing block 11 and the second energizing block 12 are formed in a regular hexadecagon, but when the number of wire-shaped members 53 is 16, for example, the first energizing block 11 and the second energizing block 12 may be a regular hexadecagon. desirable. That is, it is desirable to have the same number of regular polygons as the number of wire-like members.
  • first energizing block 11 and the second energizing block 12 are regular polygons, but they do not necessarily have to be regular polygons. However, it is desirable that the opposite sides of the first energizing block 11 and the second energizing block 12 are parallel.
  • first wire-like member 53a to the sixth wire-like member 53f are formed independently and fixed to the first energization block 11 and the second energization block 12, respectively.
  • first wire-like member 53a to the sixth wire-like member 53f do not necessarily have to have independent shapes, and the first fixing portions F1 and the second of the first wire-like member 53a to the sixth wire-like member 53f, respectively.
  • At least one of the fixed portions F2 may be integrally formed. As a result, the number of parts of at least one of the first fixed portion F1 and the second fixed portion F2 can be reduced.
  • At least one of the first fixed portion F1 and the second fixed portion F2 of the first energizing block 11 and the second energizing block 12 may have a cylindrical shape.
  • it is easy to process because the shape is simpler than, for example, a regular hexagonal tubular shape. Therefore, the processing cost is reduced. Therefore, it is possible to realize a low-cost power semiconductor module 100.
  • Embodiment 2 Another configuration of the power semiconductor module 100 will be described.
  • the configurations not described in the second embodiment are the same as those in the first embodiment, and the same configurations as in the first embodiment are designated by the same reference numerals as those in the first embodiment.
  • the same parts as those of the power semiconductor module 100 of the first embodiment will not be repeated, and mainly different points will be described.
  • FIG. 6 to 8 are diagrams showing the configuration of the chip unit 10 according to the second embodiment.
  • FIG. 6 is a perspective view showing the configuration of the chip unit 10.
  • FIG. 7 is a cross-sectional view taken along the line VII-VII of FIG. 6 showing the configuration of the chip unit 10.
  • the configuration of the chip unit 10 will be described with reference to FIGS. 6 and 7.
  • the chip unit 10 includes an energizing structure 1 and a semiconductor chip 4.
  • the energization structure 1 includes a first energization block 11, a second energization block 12, and a plurality of wire-like members 53.
  • the plurality of wire-like members 53 include the first wire-like member 53a to the sixth wire-like member 53f.
  • the first energizing block 11, the second energizing block 12, and the plurality of wire-like members 53 are formed by using, for example, surface-treated pure copper.
  • the first energizing block 11 is formed in a regular hexagonal columnar shape.
  • the first energizing block 11 is formed in a plate shape.
  • the first energization block 11 is provided with a hole 11a.
  • the second energizing block 12 is configured to have a stepped shape.
  • the second energizing block 12 includes a root portion 12a and an overhanging portion 12b.
  • the root portion 12a is arranged on the ⁇ Z direction side of the second energizing block 12.
  • the root portion 12a is formed in a square columnar shape.
  • the root portion 12a is formed in a plate shape.
  • the overhanging portion 12b is arranged on the + Z direction side of the second energizing block 12.
  • the overhanging portion 12b is formed in a regular hexagonal columnar shape.
  • the second energizing block 12 has a regular hexagonal shape when viewed from the ⁇ Z direction.
  • the second energizing block 12 is formed in a plate shape.
  • the regular hexagons of the overhanging portions 12b of the first energizing block 11 and the second energizing block 12 are congruent.
  • the sides of each of these regular hexagons are arranged so that they are parallel to each other.
  • the line segment (center line CL) connecting the center CP of the first energization block 11 and the center CP of the second energization block 12 when viewed from the ⁇ Z direction is arranged so as to be substantially parallel to the Z axis. ..
  • the first wire-like member 53a extends in the ⁇ Z direction from the first fixing portion F1 fixed to the side surface of the first energizing block 11, and is bent and extended in the ⁇ X direction at an angle of approximately 100 degrees. After that, the first wire-like member 53a is bent and stretched in the ⁇ Z direction at an angle of approximately 100 degrees, and is bent and stretched in the + X direction at an angle of approximately 100 degrees. After that, it is bent and stretched in the ⁇ Z direction at an angle of about 100 degrees, and is fixed to the side surface of the second energizing block 12 by the second fixing portion F2.
  • the shape of the portion F3 between the first fixing portion F1 and the second fixing portion F2 of the first wire-like member 53a is formed line-symmetrically with respect to the line VL passing through the center of the shape of the portion in the + Z direction.
  • the wire VL is arranged equidistantly and parallel to each of the surface of the first energizing block 11 on the ⁇ Z direction side and the surface of the second energizing block 12 on the + Z direction side.
  • the energization structure 1 includes a block member 14.
  • the block member 14 is arranged between each of the pair of wire-like members 53.
  • the block member 14 is arranged with a gap between it and the first energizing block 11, and is in contact with the second energizing block 12. The distance between the block member 14 and each of the pair of wire-like members 53 is equal.
  • a block member 14 having a regular hexagonal columnar outer circumference is arranged inside the first wire-shaped member 53a to the sixth wire-shaped member 53f.
  • a circular hole 14a is provided on the inner circumference of the block member 14.
  • the hole portion 14a is coaxial and has the same diameter as the hole portion 11a provided in the first energization block 11.
  • the spring member 15 is continuously arranged in the hole 14a of the block member 14 and the hole 11a of the first energizing block 11.
  • a spring member 15 is placed on the bottom of the block member 14.
  • the spring member 15 penetrates the first energizing block 11 and is in contact with the conductive cover plate 3. Therefore, the spring member 15 generates an urging force that urges the conductive cover plate 3.
  • the block member 14 is made of, for example, copper.
  • the block member 14 is held with respect to the second energizing block 12 so as to suppress displacement in the XY in-plane direction via a positioning groove or the like. Further, at the time of assembly (when energized), the block member 14 and the first energized block 11 are arranged with a slight gap in the Z-axis direction so as not to come into contact with each other.
  • the block member 14 is arranged with a gap so as not to come into contact with the first wire-like member 53a to the sixth wire-like member 53f at the time of assembly.
  • the block member 14 includes tapered portions 14b and 14c.
  • the tapered portions 14b and 14c are provided at the ends on at least one of the first energizing block 11 and the second energizing block 12.
  • the side surface of the block member 14 is provided with symmetrical tapered portions 14b and 14c on the + Z direction side and the ⁇ Z direction side.
  • the tapered portions 14b and 14c are configured to expand as they approach the end portions in the Z-axis direction.
  • the tapered portions 14b and 14c are on a line segment connecting both ends of the straight portion on the side surface of the block member 14 to the ⁇ Z direction side end portion of the first energization block 11 and the + Z direction side end portion of the second energization block 12, respectively. Is located in.
  • the tapered portions 14b and 14c are configured to form an angle larger than the bending angle of the first wire-shaped member 53a to the sixth wire-shaped member 53f with respect to the Z axis.
  • the fourth wire-shaped member 53d is arranged point-symmetrically with the first wire-shaped member 53a with respect to the center line CL passing through the center CP of each of the regular hexagons of the first energizing block 11 and the second energizing block 12. ..
  • the portions F3 between the first fixing portion F1 and the second fixing portion F2 of each of the pair of wire-like members 53 are configured to indirectly contact each other. That is, the portion F3 between the first fixing portion F1 and the second fixing portion F2 of each of the pair of wire-shaped members 53 is configured to be in contact with each other via the block member 14.
  • the dimension of the total length of the bent shape in the portion F3 between the first energizing block 11 and the second energizing block 12 of the first wire-shaped member 53a is from the side end portion of the first energizing block 11 on the ⁇ Z direction side.
  • the second wire-like member 53b, the third wire-like member 53c, the fifth wire-like member 53e, and the sixth wire-like member 53f will be described.
  • the second wire-like member 53b and the fifth wire-like member 53e are paired.
  • the shape and positional relationship of the second wire-like member 53b and the fifth wire-like member 53e are the same as the shape and positional relationship of the first wire-like member 53a and the fourth wire-like member 53d.
  • the third wire-like member 53c and the sixth wire-like member 53f are paired.
  • the shape and positional relationship of the third wire-like member 53c and the sixth wire-like member 53f are the same as the shape and positional relationship of the first wire-like member 53a and the fourth wire-like member 53d.
  • the root portion 12a of the second energizing block 12 comes into contact with the electrode 4a of the semiconductor chip 4, so that the second energizing block 12 is electrically connected to the semiconductor chip 4.
  • the operation of the power semiconductor module 100 according to the second embodiment will be described.
  • the power semiconductor module 100 according to the second embodiment is for providing high reliability when the semiconductor chip 4 fails. For example, consider a case where a semiconductor chip 4 fails and only one semiconductor chip 4 is short-circuited.
  • FIG. 8 is a cross-sectional view taken along the line VII-VII of FIG. 6 when only one element of the semiconductor chip 4 is short-circuited.
  • a large current flows in the same direction through the pair of the first wire-shaped member 53a and the fourth wire-shaped member 53d, so that a large attractive force acts on each of them. Therefore, the first wire-like member 53a and the fourth wire-like member 53d are greatly deformed in the central direction of the first energization block 11.
  • the first wire-shaped member 53a and the fourth wire-shaped member 53d are deformed so as to stick to each other along the side surface shape of the block member 14.
  • the deformed first wire-shaped member 53a to the sixth wire-shaped member 53f each maintain the deformed shape and maintain the energization of the chip unit 10.
  • the first wire-shaped member 53a and the fourth wire-shaped member 53d are deformed by the magnetic attraction force, the first wire-shaped member 53a and the fourth wire-shaped member 53d are placed between the first energizing block 11 and the second energizing block 12 via the block member 14 in the height direction.
  • the second energizing block 12 is continuously in contact with each other in the direction facing the first energizing block 11.
  • the length of the continuous portion of the first wire-like member 53a and the fourth wire-like member 53d sticks to the block member 14 between the first energization block 11 and the second energization block 12 when deformed by the magnetic attraction force.
  • the first wire-like member 53a and the fourth wire-like member 53d are in continuous contact with the block member 14 in the height direction between the first energization block 11 and the second energization block 12, and
  • the length is configured to be in contact with the virtual plane formed by the first energizing block 11 and the block member 14.
  • the energization structure 1 it is possible to alleviate the skin effect by the plurality of wire-like members 53 and suppress the local increase in heat generation. That is, even if only one of the plurality of semiconductor chips 4 mounted on the power semiconductor module 100 is short-circuited due to a failure and a large current is generated in the chip unit 10, the chip unit 10 is the first. Since a plurality of electric current paths having a small cross section are provided as in the wire-shaped members 53a to the sixth wire-shaped member 53f, the skin effect can be suppressed. Therefore, it is possible to suppress the phenomenon that the heat generation density is locally increased due to the occurrence of remarkable density of the current density distribution. By suppressing the phenomenon that the heat generation density is locally increased, it is possible to suppress the temperature rise of the first wire-like member 53a to the sixth wire-like member 53f.
  • the power semiconductor module 100 may be destroyed. Suppressing the dissolution of the first wire-like member 53a to the sixth wire-like member 53f leads to suppressing the destruction of the power semiconductor module 100. Therefore, by suppressing the melting of the first wire-like member 53a to the sixth wire-like member 53f, the power semiconductor module 100 provided with the energization structure 1 having high reliability becomes possible.
  • the linear distance between the first fixed portion F1 and the second fixed portion F2 is based on the length of the portion F3 between the first fixed portion F1 and the second fixed portion F2 of each of the pair of wire-like members 53. Is also short, so it is possible to prevent each of the pair of wire-like members 53 from being deformed and destroyed by the magnetic attraction.
  • the portion F3 between the first fixing portion F1 and the second fixing portion F2 of each of the pair of wire-shaped members 53 is in a state of being projected and deformed between the first energizing block 11 and the second energizing block 12. It is configured to indirectly contact each other via the block member 13, and has a continuous portion that is continuously in contact with each other in the height direction. Therefore, it is possible to prevent each of the pair of wire-like members 53 from being deformed and destroyed by the magnetic attraction.
  • the portions F3 between the first fixed portion F1 and the second fixed portion F2 are point-symmetrical with respect to the center line CL. It is configured in.
  • the energization structure 1 includes a block member 14.
  • the total length of the bent shape in the portion F3 between the first fixing portion F1 and the second fixing portion F2 is a straight line from the side end portion of the first energizing block 11 on the ⁇ Z direction side to the side surface of the block member 14. Make it equal to or slightly longer than the sum of the dimension of twice the distance to the + Z direction end of the portion and the dimension of the length of the straight portion on the side surface of the block member 14 in the + Z axis direction. It is provided in.
  • the first wire-shaped member 53a and the fourth wire-shaped member 53d are point-symmetrical and have a length sufficient for deformation with respect to the magnetic attraction force, and the deformation is suppressed by the block member 14. As a result, the stress generated in the first wire-shaped member 53a and the fourth wire-shaped member 53d can be relaxed.
  • magnetic attraction is generated for the shapes of the second wire-like member 53b and the fifth wire-like member 53e, and the third wire-like member 53c and the sixth wire-like member 53f, which are paired with each other.
  • the second wire-like member 53b and the fifth wire-like member 53e, and the third wire-like member 53c and the sixth wire-like member 53f are point-symmetrical and have a sufficient length for deformation with respect to magnetic attraction.
  • the first wire-like member 53a to the sixth wire-like member 53f are deformed, the first wire-like member 53a to the sixth wire-like member 53f are displaced toward the centers of the first energization block 11 and the second energization block 12, and the block member 14 suppresses the deformation. Will be done.
  • the block member 14 includes tapered portions 14b and 14c.
  • the tapered portions 14b and 14c are provided at the upper and lower ends of the block member 14.
  • the tapered portions 14b and 14c can reduce the required length of the first wire-like member 53a to the sixth wire-like member 53f. Further, since the amount of deformation at the time of failure energization can be suppressed, the stress of the first wire-like member 53a to the sixth wire-like member 53f can be relaxed. Therefore, since the first wire-like member 53a to the sixth wire-like member 53f are hard to break due to stress, it is possible to realize a low-cost and highly reliable power semiconductor module 100.
  • the spring member 15 has an urging force (repulsive force) acting between the conductive cover plate 3 and the block member 14. Therefore, since the conductive cover plate 3 is pressed and held in the ⁇ Z direction with respect to the state before assembly during assembly, the block member 14 can be stably held and the chip unit 10 presses and contacts the semiconductor chip 4. It is possible to assist the power to do.
  • the block member 14 Since there is a gap between the first energization block 11 and the block member 14, the block member 14 is not normally used as an energization path. However, when the first wire-like member 53a to the sixth wire-like member 53f are broken and stick to the block member 14 at the time of failure energization, the block member 14 can be used as an emergency energization path. This improves reliability.
  • the cross section of the portion F3 between the first fixed portion F1 and the second fixed portion F2 of each of the first wire-shaped member 53a to the sixth wire-shaped member 53f is rectangular, and the long side of the rectangle is the first energizing block 11 And they are arranged on the same circle VC centered on the center line CL passing through the center CP of the second energization block 12.
  • the long side is less likely to be deformed than the short side due to the moment of inertia of area.
  • each of the first wire-like member 53a to the sixth wire-like member 53f is a first energization block while suppressing the influence of the adjacent wire-like member 53. It is possible to displace the 11 and the second energization block 12 toward the center side. Therefore, it is possible to suppress unnecessary displacement in the long side direction.
  • the plurality of wire-like members 53 include an even number of first wire-like members 53a to sixth wire-like members 53f. Since the first wire-like member 53a to the sixth wire-like member 53f are composed of an even number of wires, the positions are opposed to the center line CL passing through the center CP of the first energization block 11 and the second energization block 12. Since the pair of wire-shaped members 53 can be arranged, the direction of displacement can be suppressed in one direction. Further, since the first wire-like member 53a to the sixth wire-like member 53f are evenly arranged on the same circular VC with respect to the center of the first energization block 11, the influence of the adjacent wire-like member 53 is reduced. It becomes possible.
  • the first wire-like member 53a to the sixth wire-like member 53f project in a direction away from the center line CL passing through the center CP of the first energization block 11 and the second energization block 12. It was. However, as will be described later, the first wire-like member 53a to the sixth wire-like member 53f have a plurality of bent portions and a plurality of curvatures, and the central CP of the first energization block 11 and the second energization block 12 is provided. It is possible to obtain the same effect by providing a shape protruding toward the center line CL passing through.
  • the number of wire-like members is 16 or less, but it is possible to further increase the number depending on the size of the chip unit 10.
  • the wire-like member can be an odd number, but an even number is preferable. Even if the wire-like members are odd-numbered, if they are evenly arranged, the force acts evenly in the center due to the resultant force.
  • the first energizing block 11 and the second energizing block 12 are formed in a regular hexadecagon, but when the number of wire-like members is 16, for example, it is desirable to have a regular hexadecagon. .. That is, it is desirable to have the same number of regular polygons as the number of wire-like members.
  • first energizing block 11 and the second energizing block 12 are regular polygons, but they do not necessarily have to be regular polygons. However, it is desirable that the opposite sides of the first energizing block 11 and the second energizing block 12 are parallel.
  • first wire-like member 53a to the sixth wire-like member 53f are formed independently and fixed to the first energization block 11 and the second energization block 12, respectively.
  • first wire-like member 53a to the sixth wire-like member 53f do not necessarily have to have independent shapes, and the first fixing portions F1 and the second of the first wire-like member 53a to the sixth wire-like member 53f, respectively.
  • At least one of the fixed portions F2 may be integrally formed. As a result, the number of parts of at least one of the first fixed portion F1 and the second fixed portion F2 can be reduced.
  • At least one of the first fixed portion F1 and the second fixed portion F2 of the first energizing block 11 and the second energizing block 12 may have a cylindrical shape.
  • it is easy to process because the shape is simpler than, for example, a regular hexagonal tubular shape. Therefore, the processing cost is reduced. Therefore, it is possible to realize a low-cost power semiconductor module 100.
  • the block member 14 is made of copper is shown, but the same effect can be obtained if it is a high-rigidity material, and in the case of resin, the function as an emergency energization path is Although it is lost, it is possible to have a function of suppressing deformation of the first wire-like member 53a to the sixth wire-like member 53f.
  • FIG. 9 is a cross-sectional view taken along the line IX-IX of FIG. 6 to show a modification 1 of the second embodiment.
  • FIG. 9 is a cross-sectional view for showing a modified example of the cross-sectional shape of the first wire-shaped member 53a to the sixth wire-shaped member 53f.
  • the cross section of the portion F3 between the first fixed portion F1 and the second fixed portion F2 of each of the first wire-shaped member 53a to the sixth wire-shaped member 53f is a circle. ..
  • the radius of this circle should be equal to or greater than the skin depth with respect to the current waveform of the failure mode that occurs in the assumed system.
  • the cross section of the portion F3 between the first fixed portion F1 and the second fixed portion F2 of each of the first wire-shaped member 53a to the sixth wire-shaped member 53f. Is a circle. Since the circular cross section is the most effective shape for the skin effect, it is possible to have a high heat generation density suppressing effect with the smallest cross-sectional area.
  • FIG. 10 is a cross-sectional view taken along the line IX-IX of FIG. 6 to show a modified example 2 of the second embodiment.
  • FIG. 10 is a diagram for showing a modified example of the cross-sectional shape of the first wire-shaped member 53a to the sixth wire-shaped member 53f.
  • the cross section of the portion F3 between the first fixed portion F1 and the second fixed portion F2 of each of the first wire-shaped member 53a to the sixth wire-shaped member 53f is elliptical. ..
  • the long axis of this ellipse should be equal to or greater than the skin depth with respect to the current waveform of the failure mode that occurs in the assumed system.
  • the long axis of the ellipse in each of the first wire-like member 53a to the sixth wire-like member 53f is on the same circular VC centered on the center line CL passing through the center CP of the first energization block 11 and the second energization block 12. Be placed.
  • the cross section of the portion F3 between the first fixed portion F1 and the second fixed portion F2 of each of the first wire-shaped member 53a to the sixth wire-shaped member 53f. Is an ellipse. Since the cross section of the ellipse has a shape that is more effective for the skin effect than the rectangle, it is possible to have a high heat generation density suppressing effect with a smaller cross section than the rectangle.
  • the long axis of the ellipse in each of the first wire-like member 53a to the sixth wire-like member 53f is on the same circular VC centered on the center line CL passing through the center CP of the first energization block 11 and the second energization block 12. Be placed. Therefore, it is possible to mitigate the influence of the adjacent wire-shaped members 53 in the direction.
  • FIG. 11 is a cross-sectional view taken along the line IX-IX of FIG. 6 to show a modified example 3 of the second embodiment.
  • FIG. 11 is a diagram for showing a modified example of the cross-sectional shape of the first wire-like member 53a to the sixth wire-like member 53f and the seventh wire-like member 54a to the twelfth wire-like member 54f.
  • the plurality of wire-like members 53 include a set of wire-like members 53 arranged so as to be overlapped in the radial direction of the same circle VC.
  • the plurality of wire-like members 53 include a first wire-like member 53a to a sixth wire-like member 53f and a seventh wire-like member 54a to a twelfth wire-like member 54f.
  • Each of the first wire-like member 53a to the sixth wire-like member 53f is configured as a set with each of the seventh wire-like member 54a to the twelfth wire-like member 54f.
  • Each of the first wire-like member 53a to the sixth wire-like member 53f is arranged so as to be overlapped with each of the seventh wire-like member 54a to the twelfth wire-like member 54f in the radial direction of the same circle VC.
  • the cross section of the portion F3 between the first fixed portion F1 and the second fixed portion F2 of each of the first wire-shaped member 53a to the sixth wire-shaped member 53f is rectangular.
  • the long sides of this rectangle are arranged on the same circle VC.
  • the long sides of this rectangle are arranged along the tangent of the same circle VC.
  • the short sides of this rectangle are arranged along a line connecting the center and the contact point of the same circle VC.
  • the long side is configured to be about 4 times or more and 8 times or less the length of the short side.
  • the short side is preferably 2 mm or less, and more preferably 1 mm or less so that each of the plurality of wire-like members 53 has elasticity in the short side direction.
  • the seventh wire-like member 54a to the twelfth wire-like member 54f having the same cross section are arranged on the outer side surfaces of the first wire-like member 53a to the sixth wire-like member 53f, respectively.
  • the cross section of the portion F3 between the first fixed portion F1 and the second fixed portion F2 of each of the seventh wire-shaped member 54a to the twelfth wire-shaped member 54f is rectangular.
  • the long sides of this rectangle are arranged on the same circle VC.
  • the long sides of this rectangle are arranged along the tangent of the same circle VC.
  • the chip unit 10 Even when a large current is generated in the chip unit 10, the chip unit 10 has a plurality of energization paths having a small cross section such as the first wire-like member 53a to the sixth wire-like member 53f and the seventh wire-like member 54a to the twelfth wire-like member 54f. Therefore, it is possible to suppress the epidermis effect. Therefore, it is possible to suppress the phenomenon that the heat generation density is locally increased due to the occurrence of remarkable coarseness and density of the current density distribution.
  • an electric current flows through each of the first wire-like member 53a to the sixth wire-like member 53f and the seventh wire-like member 54a to the twelfth wire-like member 54f. Therefore, for example, it is possible to suppress the heat generation density distribution for a shape in which a set of the first wire-like member 53a and the seventh wire-like member 54a are combined. This makes it possible to suppress the temperature rise.
  • the long sides of the rectangles of the cross sections of the first wire-like member 53a to the sixth wire-like member 53f and the seventh wire-like member 54a to the twelfth wire-like member 54f are arranged on the same circle VC. Therefore, it is possible to mitigate the influence of the adjacent wire-shaped members 53 in the direction.
  • FIG. 12 is a perspective view of a wire-shaped member for showing an example of the modified example 4 of the second embodiment.
  • FIG. 13 is a perspective view of a wire-shaped member for showing another example of the modified example of the second embodiment.
  • 12 and 13 are perspective views for showing a modified example of the bent shape of the wire-shaped member.
  • six wire-shaped portions are used for one chip unit 10.
  • the wire-like member 63 in an example of the modified example 4 of the second embodiment will be described with reference to FIG.
  • the wire-like member 63 includes a plurality of bent portions 63a to 63e.
  • the wire-shaped member 63 includes five bent portions 63a to 63e.
  • Each of the plurality of bent portions 63a to 63e is bent in a direction in which a pair of wire-like members 53 face each other.
  • At least one of the plurality of bent portions 63a to 63e is configured to project between the first energizing block 11 and the second energizing block 12.
  • the bent portions 63a and 63e are bent at the same angle, respectively.
  • the bent portions 63b, 63c, and 63d are bent at the same angle, respectively.
  • the bent portions 63b, 63c, 63d have a curvature smaller than that of the bent portions 63a, 63e.
  • the wire-like member 73 in another example of the modified example 4 of the second embodiment will be described with reference to FIG.
  • the wire-like member 73 includes five bent portions 73a to 73e.
  • the bent portions 73a and 73e are bent at the same angle, respectively.
  • the bent portions 73b and 73d are bent at the same angle, respectively.
  • the bent portion 73c has a large R shape in the outer peripheral direction of the first energizing block.
  • the bent portion 73c is bent in a C shape.
  • the bent portions 73b and 7d have a curvature smaller than that of the bent portions 73a and 73e.
  • the bent portions 73a and 73e have a curvature smaller than that of the bent portion 73c.
  • the bent portions 63a to 63e and 73a to 73e having a plurality of curvatures are provided.
  • the lengths of the bent portions 63a to 63e and 73a to 73e are twice the distance from the side end portion of the first energizing block 11 on the ⁇ Z direction side to the + Z direction side end portion of the straight portion of the side surface of the block member 14. , Is equal to or slightly longer than the sum of the lengths of the straight portions on the side surface of the block member 14.
  • the wire-like member 63 and the wire-like member 73 have a sufficient length for deformation with respect to a magnetic attraction force even when a large current is generated in the wire. Since the deformed wire-like member 63 and the wire-like member 73 are restrained from being displaced by the block member 14, the stress generated in the wire-like member 63 and the wire-like member 73 can be relaxed.
  • the total lengths of the wire-like member 63 and the wire-like member 73 are lengthened by the plurality of bent portions 63a to 63e and 73a to 73e. Therefore, it is possible to reduce the length required for the configuration of the bent portions 63a to 63e and 73a to 73e in the X direction. That is, it is possible to reduce the amount of the wire-shaped member 63 and the wire-shaped member 73 protruding in the X direction. Therefore, it is possible to realize a small chip unit 10. Therefore, it is possible to realize a small power semiconductor module 100.
  • 1 Energization structure 2 Conductive base plate, 3 Conductive cover plate, 4 Semiconductor chip, 4a electrode, 5 Resin frame, 6 Metal plate, 10 Chip unit, 11 1st energization block, 11a, 14a hole, 12 2nd energization Block, 12a root part, 12b overhang part, 14 block member, 14a, 14b taper part, 15 spring member, 53, 63, 73 wire-like member, 63a-63e, 73a-73e bending part, 100 power semiconductor module, F1 1st fixed part, F2 2nd fixed part, F3 part, VC same circle, VL wire.

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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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Abstract

An electrical conduction structure (1) is provided with a first electrical conduction block (11), a second electrical conduction block (12), and a plurality of wire-like members (53). Each of a pair of the wire-like members (53) includes a first fixed section (F1) and a second fixed section (F2). A straight line distance between the first fixed section (F1) and the second fixed section (F2) is shorter than the length of a portion (F3) between the first fixed section (F1) and the second fixed section (F2) of each of the pair of wire-like members (53).

Description

通電構造およびパワー半導体モジュールEnergized structure and power semiconductor module
　本発明は通電構造およびパワー半導体モジュールに関するものである。 The present invention relates to an energized structure and a power semiconductor module.
　電力変換器等で用いられるパワー半導体モジュールの通電構造の一つとして、ベースプレートと、カバープレートと、圧接ユニットと、半導体チップとで構成された通電構造がある。この通電構造では、ベースプレートとカバープレートとで圧接ユニットおよび半導体チップが圧接されて通電経路が構成されている。 As one of the energization structures of power semiconductor modules used in power converters and the like, there is an energization structure composed of a base plate, a cover plate, a pressure welding unit, and a semiconductor chip. In this energization structure, the pressure welding unit and the semiconductor chip are pressure-welded to the base plate and the cover plate to form an energization path.
　上記通電構造は、例えば、特開２０１８－５６２４４号公報（特許文献１）に記載されている。この公報には、導電性を有する板状部材（電極）と、板状部材に固定されかつ板状部材への接続方向に沿って伸縮自在な複数の圧接部材とを備えた圧接ユニットが記載されている。 The energization structure is described in, for example, Japanese Patent Application Laid-Open No. 2018-56244 (Patent Document 1). This publication describes a pressure welding unit including a conductive plate-shaped member (electrode) and a plurality of pressure-welding members fixed to the plate-shaped member and expandable and contractible along a connection direction to the plate-shaped member. ing.
　圧接部材は、圧接部材の伸縮方向に沿って延びる導電性の第１通電部と、第１通電部の表面に対して摺動自在に接触するとともに板状部材に固定された第２通電部と、第１通電部に保持されており伸縮方向に沿って伸縮自在な一つまたは複数のばね部材とを備える。 The pressure contact member includes a conductive first current-carrying portion extending along the expansion and contraction direction of the pressure-welding member and a second current-carrying portion that is slidably contacted with the surface of the first current-carrying portion and is fixed to the plate-shaped member. , It is provided with one or more spring members which are held by the first energizing portion and can be expanded and contracted along the expansion and contraction direction.
特開２０１８－５６２４４号公報JP-A-2018-56244
　上記公報に記載された圧接ユニットでは、複数の半導体チップが電力を供給する。一部の半導体チップが誤動作した場合、パワー半導体モジュールに大電流（数１００ｋＡ）が流れるおそれがある。大電流が流れた場合、大電流は減衰振動波形となるため、第１通電部および第２通電部では表皮効果により局所的に発熱密度が高くなる。この結果、第１通電部および第２通電部が溶解することによりアークが発生するおそれがある。そして、このアークによりパワー半導体モジュールが破壊されるおそれがある。 In the pressure welding unit described in the above publication, a plurality of semiconductor chips supply electric power. If some semiconductor chips malfunction, a large current (several hundreds of kA) may flow through the power semiconductor module. When a large current flows, the large current has a damped oscillating waveform, so that the heat generation density is locally increased in the first energized portion and the second energized portion due to the skin effect. As a result, an arc may be generated by melting the first energized portion and the second energized portion. Then, this arc may destroy the power semiconductor module.
　また、第１通電部および第２通電部に電流が流れた場合には、第１通電部および第２通電部に磁気吸引力が発生する。大電流が流れた場合、磁気吸引力が増大する。このため、増大した磁気吸引力により第１通電部および第２通電部が変形して破壊されるおそれがある。 Further, when a current flows through the first energized portion and the second energized portion, a magnetic attraction force is generated in the first energized portion and the second energized portion. When a large current flows, the magnetic attraction increases. Therefore, the increased magnetic attraction force may deform and destroy the first energized portion and the second energized portion.
　本発明は上記課題に鑑みてなされたものであり、その目的は、電流に依存した局所的な発熱を抑制でき、かつ磁気吸引力により変形して破壊されることを抑制できる通電構造およびそれを備えたパワー半導体モジュールを提供することである。 The present invention has been made in view of the above problems, and an object of the present invention is to provide a current-carrying structure capable of suppressing local heat generation depending on an electric current and suppressing deformation and destruction by magnetic attraction. It is to provide a equipped power semiconductor module.
　本発明の通電構造は、第１通電ブロックと、第２通電ブロックと、複数の針金状部材とを備えている。第２通電ブロックは、第１通電ブロックに対向する。複数の針金状部材は、第１通電ブロックと第２通電ブロックとに接続され、かつ導電性を有し非直線形状である。複数の針金状部材は、第１通電ブロックおよび第２通電ブロックを挟んで向かい合うように配置された一対の針金状部材を含んでいる。一対の針金状部材の各々は、第１通電ブロックに固定された第１固定部と、第２通電ブロックに固定された第２固定部とを含んでいる。第１固定部と第２固定部との間の直線距離は、一対の針金状部材の各々の第１固定部と第２固定部との間の部分の長さよりも短い。 The energization structure of the present invention includes a first energization block, a second energization block, and a plurality of wire-like members. The second energizing block faces the first energizing block. The plurality of wire-like members are connected to the first energizing block and the second energizing block, have conductivity, and have a non-linear shape. The plurality of wire-like members include a pair of wire-like members arranged so as to face each other with the first energization block and the second energization block interposed therebetween. Each of the pair of wire-like members includes a first fixing portion fixed to the first energizing block and a second fixing portion fixed to the second energizing block. The linear distance between the first fixing portion and the second fixing portion is shorter than the length of the portion between the first fixing portion and the second fixing portion of each of the pair of wire-like members.
　本発明の通電構造によれば、複数の針金状部材により表皮効果を緩和して局所的に発熱密度が高くなることを抑制することができる。また、第１固定部と第２固定部との間の直線距離は、一対の針金状部材の各々の第１固定部と第２固定部との間の部分の長さよりも短いため、磁気吸引力により一対の針金状部材の各々が変形して破壊されることを抑制できる。 According to the energization structure of the present invention, it is possible to alleviate the epidermis effect by a plurality of wire-like members and suppress the local increase in heat generation density. Further, since the linear distance between the first fixed portion and the second fixed portion is shorter than the length of the portion between the first fixed portion and the second fixed portion of each of the pair of wire-like members, magnetic attraction is performed. It is possible to prevent each of the pair of wire-like members from being deformed and destroyed by the force.
実施の形態１に係るパワー半導体モジュールの構成を概略的に示す斜視図である。It is a perspective view which shows typically the structure of the power semiconductor module which concerns on Embodiment 1. FIG. 実施の形態１に係るチップユニットの構成を概略的に示す斜視図である。It is a perspective view which shows schematic structure of the chip unit which concerns on Embodiment 1. FIG. 図２のＩＩＩ－ＩＩＩ線に沿う断面図である。It is sectional drawing which follows the line III-III of FIG. 図２のＩＶ－ＩＶ線に沿う断面図である。It is sectional drawing which follows the IV-IV line of FIG. 図２のチップユニットの端子が短絡した状態を示す断面図である。It is sectional drawing which shows the state which the terminal of the chip unit of FIG. 2 is short-circuited. 実施の形態２に係るパワー半導体モジュールの構成を概略的に示す斜視図である。It is a perspective view which shows schematic structure of the power semiconductor module which concerns on Embodiment 2. FIG. 図６のＶＩＩ－ＶＩＩ線に沿う断面図である。FIG. 6 is a cross-sectional view taken along the line VII-VII of FIG. 図７のチップユニットの端子が短絡した状態を示す断面図である。It is sectional drawing which shows the state which the terminal of the chip unit of FIG. 7 is short-circuited. 実施の形態２に係るチップユニットの変形例１を示す図６のＩＸ－ＩＸ線に沿う位置での断面図である。It is sectional drawing at the position along the IX-IX line of FIG. 6 which shows the modification 1 of the chip unit which concerns on Embodiment 2. FIG. 実施の形態２に係るチップユニットの変形例２を示す図９に対応する位置での断面図である。It is sectional drawing at the position corresponding to FIG. 9 which shows the modification 2 of the chip unit which concerns on Embodiment 2. FIG. 実施の形態２に係るチップユニットの変形例３を示す図９に対応する位置での断面図である。It is sectional drawing at the position corresponding to FIG. 9 which shows the modification 3 of the chip unit which concerns on Embodiment 2. FIG. 実施の形態２に係るチップユニットの変形例４の針金状部材の一例を概略的に示す斜視図である。It is a perspective view which shows typically an example of the wire-like member of the modification 4 of the chip unit which concerns on Embodiment 2. FIG. 実施の形態２に係るチップユニットの変形例４の針金状部材の別例に示す斜視図である。It is a perspective view which shows another example of the wire-like member of the modification 4 of the chip unit which concerns on Embodiment 2. FIG.
　以下、本発明の実施の形態について図に基づいて説明する。なお、以下においては、同一または相当する部分に同一の符号を付すものとし、重複する説明は繰り返さない。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following, the same or corresponding parts shall be designated by the same reference numerals, and duplicate description will not be repeated.
　実施の形態１．
　図１～図４は、実施の形態１に係るパワー半導体モジュールの構成を示す図である。図１は、実施の形態１に係るパワー半導体モジュールの構成を示すための外観斜視図である。図２は、実施の形態１に係るチップユニットの構成を示すための斜視図である。図３は、実施の形態１に係るチップユニットの構成を示すための図２のＩＩＩ－ＩＩＩ線に沿う断面図である。図４は、実施の形態１に係るチップユニットの構成を示すための図２のＩＶ－ＩＶ線に沿う断面図である。 Embodiment 1.
1 to 4 are diagrams showing the configuration of the power semiconductor module according to the first embodiment. FIG. 1 is an external perspective view for showing the configuration of the power semiconductor module according to the first embodiment. FIG. 2 is a perspective view for showing the configuration of the chip unit according to the first embodiment. FIG. 3 is a cross-sectional view taken along the line III-III of FIG. 2 for showing the configuration of the chip unit according to the first embodiment. FIG. 4 is a cross-sectional view taken along the line IV-IV of FIG. 2 for showing the configuration of the chip unit according to the first embodiment.
　以下、図の説明を容易にするためにＸＹＺ座標を用いて説明する。図１のパワー半導体モジュールのＸ軸の矢印方向を＋Ｘ方向、反対を－Ｘ方向とし、Ｙ軸の矢印方向を＋Ｙ方向、反対を－Ｙ方向とし、Ｚ軸の矢印方向を＋Ｚ方向、反対を－Ｚ方向とする。 Hereinafter, in order to facilitate the explanation of the figure, XYZ coordinates will be used for explanation. The X-axis arrow direction of the power semiconductor module in FIG. 1 is the + X direction, the opposite is the -X direction, the Y-axis arrow direction is the + Y direction, the opposite is the -Y direction, the Z-axis arrow direction is the + Z direction, and the opposite is the opposite. -Z direction.
　図１を参照して、本実施の形態１に係るパワー半導体モジュール１００の構成について説明する。なお、図１では、説明の便宜のため、導電性カバープレート３の一部が図示されておらず、第１通電ブロックの孔部も図示されていない。パワー半導体モジュール１００は、縦方向および横方向にそれぞれサブモジュール１０１が２個ずつ配置されている。ただし、実施の形態１において、サブモジュール１０１の数は、４個に限定されるものではなく、その他の個数であっても良い。 The configuration of the power semiconductor module 100 according to the first embodiment will be described with reference to FIG. In FIG. 1, for convenience of explanation, a part of the conductive cover plate 3 is not shown, and the hole portion of the first energizing block is also not shown. In the power semiconductor module 100, two submodules 101 are arranged in each of the vertical direction and the horizontal direction. However, in the first embodiment, the number of submodules 101 is not limited to four, and may be any other number.
　サブモジュール１０１には、スイッチングチップ、フリーホイールダイオードチップ、ワイドバンドギャップチップなどの複数種の電力用半導体チップが使用されている。これらの電力用半導体チップを総称して半導体チップとする。 A plurality of types of power semiconductor chips such as switching chips, freewheel diode chips, and wide bandgap chips are used in the submodule 101. These power semiconductor chips are collectively referred to as semiconductor chips.
　サブモジュール１０１には、チップユニット１０が９個格納されている。サブモジュール１０１には、９個のチップユニット１０を合成する通電経路が形成される。 Nine chip units 10 are stored in the sub-module 101. The sub-module 101 is formed with an energization path for synthesizing nine chip units 10.
　図２および図３を参照して、サブモジュール１０１は、導電性ベースプレート２と、導電性カバープレート３と、チップユニット１０と、金属板６とを備えている。導電性ベースプレート２は、略平板状に構成されている。導電性カバープレート３は、略平板状に構成されている。導電性ベースプレート２と導電性カバープレート３とは上下に配置されている。導電性カバープレート３は、導電性ベースプレート２の上に配置されている。チップユニット１０は、導電性ベースプレート２と導電性カバープレート３の間に配置されている。チップユニット１０は、半導体チップ４を含んでいる。半導体チップ４は、チップユニット１０の下部に位置する。金属板６は、半導体チップ４の下に位置する。 With reference to FIGS. 2 and 3, the submodule 101 includes a conductive base plate 2, a conductive cover plate 3, a chip unit 10, and a metal plate 6. The conductive base plate 2 is formed in a substantially flat plate shape. The conductive cover plate 3 is formed in a substantially flat plate shape. The conductive base plate 2 and the conductive cover plate 3 are arranged vertically. The conductive cover plate 3 is arranged on the conductive base plate 2. The chip unit 10 is arranged between the conductive base plate 2 and the conductive cover plate 3. The chip unit 10 includes a semiconductor chip 4. The semiconductor chip 4 is located below the chip unit 10. The metal plate 6 is located below the semiconductor chip 4.
　また、サブモジュール１０１は、樹脂フレーム５を備えている。樹脂フレーム５は、導電性ベースプレート２と導電性カバープレート３とを位置決めする効果を有する。また、樹脂フレーム５は、導電性ベースプレート２と導電性カバープレート３との間のスペーサの効果を有する。実施の形態１において、図１に示すパワー半導体モジュール１００は４個のサブモジュール１０１を合成する通電経路を構成している。 Further, the sub-module 101 includes a resin frame 5. The resin frame 5 has an effect of positioning the conductive base plate 2 and the conductive cover plate 3. Further, the resin frame 5 has the effect of a spacer between the conductive base plate 2 and the conductive cover plate 3. In the first embodiment, the power semiconductor module 100 shown in FIG. 1 constitutes an energization path for synthesizing four submodules 101.
　チップユニット１０は、導電性ベースプレート２と導電性カバープレート３の間の通電経路を構成するものである。チップユニット１０は、導電性カバープレート３からの圧接力により導電性ベースプレート２と導電性カバープレート３とを電気的に接続するものである。チップユニット１０とともに半導体チップ４としてスイッチングチップおよびワイドギャップチップを用いたサブモジュール１０１およびパワー半導体モジュール１００においては、例えば、サブモジュール内部に圧接部材以外に非図示の信号用の接続部材が配置されている。その接続部材の一端は半導体チップ４の信号端子、他端はエミッタ信号基板に接続される。 The chip unit 10 constitutes an energization path between the conductive base plate 2 and the conductive cover plate 3. The chip unit 10 electrically connects the conductive base plate 2 and the conductive cover plate 3 by the pressure contact force from the conductive cover plate 3. In the sub-module 101 and the power semiconductor module 100 in which the switching chip and the wide-gap chip are used as the semiconductor chip 4 together with the chip unit 10, for example, a connection member for a signal (not shown) is arranged inside the sub-module in addition to the pressure welding member. There is. One end of the connecting member is connected to the signal terminal of the semiconductor chip 4, and the other end is connected to the emitter signal board.
　導電性ベースプレート２に金属板６を介して半導体チップ４が配置されている。半導体チップ４は、平板状に構成されている。半導体チップ４の＋Ｚ方向側の面には電極４ａが設けられている。電極４ａは第２通電ブロック１２と電気的に接続されている。導電性ベースプレート２および導電性カバープレート３の各々は、例えば、表面処理を施した純銅を用いて形成される。導電性カバープレート３の＋Ｚ方向側の面には－Ｚ方向に圧力がかかっている。この圧力によってチップユニット１０は導電性ベースプレート２に圧接される。これにより、導電性ベースプレート２はチップユニット１０を介して導電性カバープレート３と電気的に接続される。 The semiconductor chip 4 is arranged on the conductive base plate 2 via the metal plate 6. The semiconductor chip 4 is formed in a flat plate shape. An electrode 4a is provided on the surface of the semiconductor chip 4 on the + Z direction side. The electrode 4a is electrically connected to the second energizing block 12. Each of the conductive base plate 2 and the conductive cover plate 3 is formed using, for example, surface-treated pure copper. Pressure is applied to the surface of the conductive cover plate 3 on the + Z direction side in the −Z direction. This pressure causes the chip unit 10 to come into pressure contact with the conductive base plate 2. As a result, the conductive base plate 2 is electrically connected to the conductive cover plate 3 via the chip unit 10.
　チップユニット１０の構成について詳しく説明する。チップユニット１０は、通電構造１と、半導体チップ４とを含んでいる。半導体チップ４は、通電構造１に電気的に接続されている。通電構造１は、第１通電ブロック１１と、第２通電ブロック１２と、複数の針金状部材５３とを含んでいる。通電構造１は、第１通電ブロック１１と第２通電ブロック１２とが近づくように圧力が加えられた状態で通電を維持するように構成されている。 The configuration of the chip unit 10 will be described in detail. The chip unit 10 includes an energizing structure 1 and a semiconductor chip 4. The semiconductor chip 4 is electrically connected to the energizing structure 1. The energization structure 1 includes a first energization block 11, a second energization block 12, and a plurality of wire-like members 53. The energization structure 1 is configured to maintain energization in a state where pressure is applied so that the first energization block 11 and the second energization block 12 come close to each other.
　第１通電ブロック１１および第２通電ブロック１２は、導電性を有している。第２通電ブロック１２は、第１通電ブロック１１に対向する。複数の針金状部材５３は、第１通電ブロック１１と第２通電ブロック１２とに接続されている。複数の針金状部材５３は、第１通電ブロック１１と第２通電ブロック１２とが対向する方向に延在している。複数の針金状部材は、導電性を有している。複数の針金状部材５３は、低抵抗導体である。複数の針金状部材５３は、針金状部材５３ａ～５３ｆを含んでいる。以下、適宜、針金状部材５３ａ～５３ｆを第１針金状部材５３ａ～第６針金状部材５３ｆという。第１針金状部材５３ａ～第６針金状部材５３ｆはそれぞれ同一の形状に構成されている。 The first energizing block 11 and the second energizing block 12 have conductivity. The second energizing block 12 faces the first energizing block 11. The plurality of wire-like members 53 are connected to the first energizing block 11 and the second energizing block 12. The plurality of wire-shaped members 53 extend in the direction in which the first energizing block 11 and the second energizing block 12 face each other. The plurality of wire-like members have conductivity. The plurality of wire-like members 53 are low resistance conductors. The plurality of wire-like members 53 include wire-like members 53a to 53f. Hereinafter, the wire-like members 53a to 53f will be referred to as the first wire-like member 53a to the sixth wire-like member 53f as appropriate. The first wire-shaped member 53a to the sixth wire-shaped member 53f are each configured to have the same shape.
　第１通電ブロック１１および第２通電ブロック１２ならびに複数の針金状部材５３は、例えば表面処理を施した純銅を用いて形成される。複数の針金状部材５３の各々の厚みは、第１通電ブロック１１の厚みよりも薄い。第１通電ブロック１１は、正六角柱状に構成されている。第１通電ブロック１１は、－Ｚ方向から見て正六角形状に構成されている。第１通電ブロック１１は、板状に構成されている。第１通電ブロック１１には孔部１１ａが設けられている。孔部１１ａは円形に構成されている。孔部１１ａは、第２通電ブロック１２が第１通電ブロック１１に対向する方向（－Ｚ方向）に、第１通電ブロック１１を貫通している。孔部１１ａは、－Ｚ方向から見て第１通電ブロック１１の中央に配置されている。 The first energizing block 11, the second energizing block 12, and the plurality of wire-like members 53 are formed by using, for example, surface-treated pure copper. The thickness of each of the plurality of wire-like members 53 is thinner than the thickness of the first energizing block 11. The first energizing block 11 is formed in a regular hexagonal columnar shape. The first energizing block 11 has a regular hexagonal shape when viewed from the −Z direction. The first energizing block 11 is formed in a plate shape. The first energization block 11 is provided with a hole 11a. The hole 11a is formed in a circular shape. The hole portion 11a penetrates the first energizing block 11 in the direction in which the second energizing block 12 faces the first energizing block 11 (−Z direction). The hole portion 11a is arranged in the center of the first energizing block 11 when viewed from the −Z direction.
　第２通電ブロック１２は、段付き形状に構成されている。第２通電ブロック１２は、根元部１２ａと、張出部１２ｂとを含んでいる。根元部１２ａは、第２通電ブロック１２の－Ｚ方向側に配置されている。根元部１２ａは、四角柱状に構成されている。根元部１２ａは板状に構成されている。張出部１２ｂは、第２通電ブロック１２の＋Ｚ方向側に配置されている。張出部１２ｂは、正六角柱状に構成されている。第２通電ブロック１２は、－Ｚ方向から見て正六角形状に構成されている。第２通電ブロック１２は、板状に構成されている。 The second energizing block 12 is configured to have a stepped shape. The second energizing block 12 includes a root portion 12a and an overhanging portion 12b. The root portion 12a is arranged on the −Z direction side of the second energizing block 12. The root portion 12a is formed in a square columnar shape. The root portion 12a is formed in a plate shape. The overhanging portion 12b is arranged on the + Z direction side of the second energizing block 12. The overhanging portion 12b is formed in a regular hexagonal columnar shape. The second energizing block 12 has a regular hexagonal shape when viewed from the −Z direction. The second energizing block 12 is formed in a plate shape.
　第１通電ブロック１１および第２通電ブロック１２の張出部１２ｂの各々の正六角形は、合同である。これらの正六角形のそれぞれの辺は、互いに平行になるように配置されている。また、－Ｚ方向から見て第１通電ブロック１１の中心ＣＰと第２通電ブロック１２の中心ＣＰとを結んだ線分（中心線ＣＬ）は、Ｚ軸と略平行になるように配置される。 The regular hexagons of the overhanging portions 12b of the first energizing block 11 and the second energizing block 12 are congruent. The sides of each of these regular hexagons are arranged so that they are parallel to each other. Further, the line segment (center line CL) connecting the center CP of the first energization block 11 and the center CP of the second energization block 12 when viewed from the −Z direction is arranged so as to be substantially parallel to the Z axis. ..
　図３および図４を参照して、複数の針金状部材５３の形状について説明する。複数の針金状部材５３は、非直線形状である。つまり、複数の針金状部材５３の各々は、直線形状ではなく、屈曲または湾曲している。複数の針金状部材５３は、第１通電ブロック１１および第２通電ブロック１２を挟んで向かい合うように配置された一対の針金状部材５３を含んでいる。一対の針金状部材５３は、例えば、第１針金状部材５３ａおよび第４針金状部材５３ｄである。複数の針金状部材５３の形状について、主に第１針金状部材５３ａおよび第４針金状部材５３ｄを用いて説明する。第１針金状部材５３ａおよび第４針金状部材５３ｄの各々の一端は、第１通電ブロック１１に固定されている。第１針金状部材５３ａおよび第４針金状部材５３ｄの各々の他端は、第２通電ブロック１２に固定されている。 The shapes of the plurality of wire-like members 53 will be described with reference to FIGS. 3 and 4. The plurality of wire-like members 53 have a non-linear shape. That is, each of the plurality of wire-like members 53 is bent or curved rather than linear. The plurality of wire-like members 53 include a pair of wire-like members 53 arranged so as to face each other with the first energization block 11 and the second energization block 12 interposed therebetween. The pair of wire-like members 53 are, for example, a first wire-like member 53a and a fourth wire-like member 53d. The shapes of the plurality of wire-like members 53 will be described mainly using the first wire-like member 53a and the fourth wire-like member 53d. One end of each of the first wire-like member 53a and the fourth wire-like member 53d is fixed to the first energization block 11. The other ends of the first wire-shaped member 53a and the fourth wire-shaped member 53d are fixed to the second energizing block 12.
　一対の針金状部材５３の各々は、第１通電ブロック１１に固定された第１固定部Ｆ１と、第２通電ブロック１２に固定された第２固定部Ｆ２とを含んでいる。一対の針金状部材５３の各々は、第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３を含んでいる。第１固定部Ｆ１と第２固定部Ｆ２との間の直線距離は、一対の針金状部材５３の各々の第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３の長さよりも短い。一対の針金状部材５３の各々の第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３は、第１通電ブロック１１と第２通電ブロック１２との間に突き出すように変形した状態で、直接または間接に互いに接するように構成されており、高さ方向に連続して接する連続部分を有している。つまり、一対の針金状部材５３の各々は、磁気吸引力により変形した際に、第１通電ブロック１１と第２通電ブロック１２との間で、高さ方向（第２通電ブロック１２が第１通電ブロック１１に対向する方向）に連続して互いに接する部分である連続部分を有する長さで構成されている。本実施の形態では、一対の針金状部材５３の各々の第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３は、直接に互いに接するように構成されている。一対の針金状部材５３の各々の第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３は、磁気吸引力により第１通電ブロック１１と第２通電ブロック１２との間に突き出して互いに接続されるように構成されている。一対の針金状部材５３の各々の第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３の幅は、第１固定部Ｆ１および第２固定部Ｆ２の各々の幅よりも狭い。 Each of the pair of wire-shaped members 53 includes a first fixing portion F1 fixed to the first energizing block 11 and a second fixing portion F2 fixed to the second energizing block 12. Each of the pair of wire-like members 53 includes a portion F3 between the first fixing portion F1 and the second fixing portion F2. The linear distance between the first fixed portion F1 and the second fixed portion F2 is shorter than the length of the portion F3 between the first fixed portion F1 and the second fixed portion F2 of each of the pair of wire-like members 53. .. The portion F3 between the first fixing portion F1 and the second fixing portion F2 of each of the pair of wire-shaped members 53 is deformed so as to protrude between the first energizing block 11 and the second energizing block 12. , Directly or indirectly, are configured to be in contact with each other and have continuous portions that are continuously in contact with each other in the height direction. That is, when each of the pair of wire-like members 53 is deformed by the magnetic attraction force, the height direction (the second energization block 12 is the first energization) between the first energization block 11 and the second energization block 12. It is configured to have a length having a continuous portion that is a portion that is continuously in contact with each other in the direction facing the block 11). In the present embodiment, the portions F3 between the first fixing portion F1 and the second fixing portion F2 of each of the pair of wire-like members 53 are configured to be in direct contact with each other. The portion F3 between the first fixing portion F1 and the second fixing portion F2 of each of the pair of wire-like members 53 protrudes between the first energizing block 11 and the second energizing block 12 by a magnetic attraction force and mutually. It is configured to be connected. The width of the portion F3 between the first fixing portion F1 and the second fixing portion F2 of each of the pair of wire-like members 53 is narrower than the width of each of the first fixing portion F1 and the second fixing portion F2.
　複数の針金状部材５３の各々は、第１通電ブロック１１および第２通電ブロック１２の各々の中心ＣＰを通る中心線ＣＬを中心とする同一円ＶＣ上に配置されている。つまり、複数の針金状部材５３の各々と中心線ＣＬとの同一円ＶＣの径方向の距離は互いに等しい。複数の針金状部材５３の各々は、同一円ＶＣ上において中心線ＣＬに対して均等の角度で配置されている。複数の針金状部材５３が６本の場合には、複数の針金状部材５３の各々は、中心線ＣＬに対して均等に６０度の角度で配置されている。 Each of the plurality of wire-shaped members 53 is arranged on the same circular VC centered on the center line CL passing through the center CP of each of the first energization block 11 and the second energization block 12. That is, the radial distances of the same circle VC from each of the plurality of wire-shaped members 53 and the center line CL are equal to each other. Each of the plurality of wire-like members 53 is arranged at an equal angle with respect to the center line CL on the same circular VC. When the plurality of wire-like members 53 are six, each of the plurality of wire-like members 53 is evenly arranged at an angle of 60 degrees with respect to the center line CL.
　複数の針金状部材５３の各々の第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３の断面は、長方形である。この長方形の長辺は、同一円ＶＣ上に配置されている。この長方形の長辺は、同一円ＶＣの接線に沿って配置されている。なお、第２通電ブロック１２の中心ＣＰは、＋Ｚ方向において第１通電ブロック１１の中心ＣＰに重なっている。この長方形の短辺は、同一円ＶＣの中心と接点とを結ぶ線に沿って配置されている。この長方形の短辺は、長辺に直交するように配置されている。長辺は、短辺に対して４倍以上８倍以下程度の長さとなるように構成されている。複数の針金状部材５３の各々が短辺方向に弾性を有するように、短辺は２ｍｍ以下が好ましく、１ｍｍ以下がさらに好ましい。 The cross section of the portion F3 between the first fixing portion F1 and the second fixing portion F2 of each of the plurality of wire-shaped members 53 is rectangular. The long sides of this rectangle are arranged on the same circle VC. The long sides of this rectangle are arranged along the tangent of the same circle VC. The central CP of the second energizing block 12 overlaps the central CP of the first energizing block 11 in the + Z direction. The short sides of this rectangle are arranged along a line connecting the center and the contact point of the same circle VC. The short sides of this rectangle are arranged so as to be orthogonal to the long sides. The long side is configured to be about 4 times or more and 8 times or less the length of the short side. The short side is preferably 2 mm or less, and more preferably 1 mm or less so that each of the plurality of wire-like members 53 has elasticity in the short side direction.
　第１針金状部材５３ａは、第１通電ブロック１１の側面に固定された第１固定部Ｆ１から－Ｚ方向に延伸し、略９０度の角度で＋Ｘ方向に折り曲げられて延伸する。その後、第１針金状部材５３ａは、略９０度の角度で－Ｚ方向に折り曲げられて延伸し、略９０度の角度で－Ｘ方向に折り曲げられて延伸する。その後、略９０度の角度で－Ｚ方向に折り曲げられて延伸し、第２固定部Ｆ２で第２通電ブロック１２の側面に固定される。第１針金状部材５３ａの第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３の形状は、＋Ｚ方向における当該部分の形状の中心を通る線ＶＬに対して線対称に構成されている。この線ＶＬは、第１通電ブロック１１の－Ｚ方向側の面および第２通電ブロック１２の＋Ｚ方向側の面の各々に等距離かつ平行に配置されている。 The first wire-like member 53a extends in the −Z direction from the first fixing portion F1 fixed to the side surface of the first energizing block 11, and is bent and extended in the + X direction at an angle of approximately 90 degrees. After that, the first wire-like member 53a is bent and stretched in the −Z direction at an angle of approximately 90 degrees, and then bent and stretched in the −X direction at an angle of approximately 90 degrees. After that, it is bent and stretched in the −Z direction at an angle of about 90 degrees, and is fixed to the side surface of the second energizing block 12 by the second fixing portion F2. The shape of the portion F3 between the first fixing portion F1 and the second fixing portion F2 of the first wire-like member 53a is formed line-symmetrically with respect to the line VL passing through the center of the shape of the portion in the + Z direction. There is. The line VL is arranged equidistantly and parallel to each of the surface of the first energizing block 11 on the −Z direction side and the surface of the second energizing block 12 on the + Z direction side.
　第４針金状部材５３ｄは、第１通電ブロック１１および第２通電ブロック１２の各々の正六角形の中心ＣＰを通る中心線ＣＬに対して、第１針金状部材５３ａと点対称に配置されている。 The fourth wire-shaped member 53d is arranged point-symmetrically with the first wire-shaped member 53a with respect to the center line CL passing through the center CP of each of the regular hexagons of the first energizing block 11 and the second energizing block 12. ..
　第１針金状部材５３ａの第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３における折り曲げ形状の合計長さの寸法は、第１通電ブロック１１の側面から第１通電ブロック１１の中心ＣＰまでの距離の２倍の寸法と、第１通電ブロック１１から第２通電ブロック１２までの＋Ｚ軸方向の距離の寸法との和と等しいか、もしくは和よりも僅かに長くなるように設けられている。なお、第１通電ブロック１１から第２通電ブロック１２までの＋Ｚ軸方向の距離の寸法は、パワー半導体モジュール１００が組み立てられた時の寸法である。 The total length of the bent shape in the portion F3 between the first fixing portion F1 and the second fixing portion F2 of the first wire-like member 53a is the dimension of the total length of the bent shape from the side surface of the first energizing block 11 to the center of the first energizing block 11. It is provided so as to be equal to or slightly longer than the sum of the dimension of twice the distance to the CP and the dimension of the distance in the + Z axis direction from the first energizing block 11 to the second energizing block 12. ing. The dimension of the distance from the first energizing block 11 to the second energizing block 12 in the + Z axis direction is the dimension when the power semiconductor module 100 is assembled.
　第２針金状部材５３ｂ、第３針金状部材５３ｃ、第５針金状部材５３ｅおよび第６針金状部材５３ｆについて説明する。第２針金状部材５３ｂと第５針金状部材５３ｅとは一対になっている。第２針金状部材５３ｂおよび第５針金状部材５３ｅの形状および位置関係は、第１針金状部材５３ａおよび第４針金状部材５３ｄの形状および位置関係と同様の関係となる。第３針金状部材５３ｃと第６針金状部材５３ｆとは一対になっている。第３針金状部材５３ｃおよび第６針金状部材５３ｆの形状および位置関係は、第１針金状部材５３ａおよび第４針金状部材５３ｄの形状および位置関係と同様の関係となる。第２通電ブロック１２の根元部１２ａが半導体チップ４の電極４ａに当接することにより、第２通電ブロック１２は半導体チップ４と電気的に接続されている。 The second wire-like member 53b, the third wire-like member 53c, the fifth wire-like member 53e, and the sixth wire-like member 53f will be described. The second wire-like member 53b and the fifth wire-like member 53e are paired. The shape and positional relationship of the second wire-like member 53b and the fifth wire-like member 53e are the same as the shape and positional relationship of the first wire-like member 53a and the fourth wire-like member 53d. The third wire-like member 53c and the sixth wire-like member 53f are paired. The shape and positional relationship of the third wire-like member 53c and the sixth wire-like member 53f are the same as the shape and positional relationship of the first wire-like member 53a and the fourth wire-like member 53d. The root portion 12a of the second energizing block 12 comes into contact with the electrode 4a of the semiconductor chip 4, so that the second energizing block 12 is electrically connected to the semiconductor chip 4.
　実施の形態１に係るパワー半導体モジュール１００の動作について説明する。実施の形態１に係るパワー半導体モジュール１００は、半導体チップ４が故障したときに高い信頼性を備えるためのものである。例えば、半導体チップ４が故障して、１つの半導体チップ４のみが短絡されたときについて考える。 The operation of the power semiconductor module 100 according to the first embodiment will be described. The power semiconductor module 100 according to the first embodiment is for providing high reliability when the semiconductor chip 4 fails. For example, consider a case where a semiconductor chip 4 fails and only one semiconductor chip 4 is short-circuited.
　パワー半導体モジュール１００は電力変換器等のシステムで使用される。パワー半導体モジュール１００を単なる抵抗と見立てたとき、パワー半導体モジュール１００が使用されたシステムは単純なＲＬＣ直列回路と等価となる。パワー半導体モジュール１００には複数の半導体チップ４が並列に組み込まれている。 The power semiconductor module 100 is used in a system such as a power converter. When the power semiconductor module 100 is regarded as a mere resistor, the system in which the power semiconductor module 100 is used is equivalent to a simple RLC series circuit. A plurality of semiconductor chips 4 are incorporated in parallel in the power semiconductor module 100.
　半導体チップ４の１素子のみが短絡され、短絡された半導体チップ４に高電圧が印加された場合、ＲＬＣ回路の電流波形は減衰振動波形となることが想定され、一時的に高周波の電流が流れることとなる。 When only one element of the semiconductor chip 4 is short-circuited and a high voltage is applied to the short-circuited semiconductor chip 4, it is assumed that the current waveform of the RLC circuit becomes an attenuated vibration waveform, and a high-frequency current temporarily flows. It will be.
　チップユニット１０に使用される第１針金状部材５３ａ～第６針金状部材５３ｆは、表面処理を施した銅で形成されている。交流電流が導体に流れるとき、電流密度が導体表面では高くなり、表面から離れ内側になるほど低くなるという表皮効果という現象が知られている。電流が導体表面に流れる電流の１／ｅになる距離を表皮深さという。例えば、銅線の場合、交流電流４～５ｋＨｚに対して、表皮深さは１ｍｍ程度となる。 The first wire-like member 53a to the sixth wire-like member 53f used in the chip unit 10 are formed of surface-treated copper. It is known that when an AC current flows through a conductor, the current density increases on the surface of the conductor and decreases toward the inside away from the surface, which is called the epidermis effect. The distance at which the current becomes 1 / e of the current flowing on the conductor surface is called the skin depth. For example, in the case of copper wire, the skin depth is about 1 mm with respect to an alternating current of 4 to 5 kHz.
　図５は、半導体チップ４の１素子のみが短絡したときの図２のＩＩＩ－ＩＩＩ線に沿う断面図である。図５を参照して、例えば、一対となる第１針金状部材５３ａおよび第４針金状部材５３ｄには、同方向の大電流が流れるため、それぞれに大きな吸引力が働く。そのため、第１針金状部材５３ａおよび第４針金状部材５３ｄは、第１通電ブロック１１の中心方向に大きく変形する。第１針金状部材５３ａおよび第４針金状部材５３ｄはそれぞれ導電性ベースプレート２、互いに対向する第４針金状部材（第１針金状部材５３ａに対しては第４針金状部材５３ｄ）、導電性カバープレート３に沿って、張り付くように変形する。変形した第１針金状部材５３ａ～第６針金状部材５３ｆはそれぞれ変形した形状を保ちチップユニット１０の通電を維持する。第１針金状部材５３ａおよび第４針金状部材５３ｄは、磁気吸引力により変形した際に、第１通電ブロック１１と第２通電ブロック１２との間で、高さ方向（第２通電ブロック１２が第１通電ブロック１１に対向する方向）に連続して互いに接する。第１針金状部材５３ａおよび第４針金状部材５３ｄの連続部分の長さは、第１通電ブロック１１と第２通電ブロック１２との間での第１針金状部材５３ａおよび第４針金状部材５３ｄの長さの大部分を占めている。 FIG. 5 is a cross-sectional view taken along the line III-III of FIG. 2 when only one element of the semiconductor chip 4 is short-circuited. With reference to FIG. 5, for example, a large current flows in the same direction through the pair of the first wire-shaped member 53a and the fourth wire-shaped member 53d, so that a large attractive force acts on each of them. Therefore, the first wire-like member 53a and the fourth wire-like member 53d are greatly deformed in the central direction of the first energization block 11. The first wire-like member 53a and the fourth wire-like member 53d are the conductive base plate 2, the fourth wire-like member facing each other (the fourth wire-like member 53d for the first wire-like member 53a), and the conductive cover, respectively. It is deformed so as to stick along the plate 3. The deformed first wire-shaped member 53a to the sixth wire-shaped member 53f each maintain the deformed shape and maintain the energization of the chip unit 10. When the first wire-like member 53a and the fourth wire-like member 53d are deformed by the magnetic attraction force, the first energization block 11 and the second energization block 12 are in the height direction (the second energization block 12 is They are in continuous contact with each other in the direction facing the first energization block 11). The length of the continuous portion of the first wire-like member 53a and the fourth wire-like member 53d is the length of the first wire-like member 53a and the fourth wire-like member 53d between the first energization block 11 and the second energization block 12. Occupies most of the length of the wire.
　次に、実施の形態１の作用効果について説明する。
　実施の形態１に係る通電構造１によれば、複数の針金状部材５３により表皮効果を緩和して局所的に発熱が高くなることを抑制することができる。つまり、パワー半導体モジュール１００に搭載される複数の半導体チップ４の内、１つの半導体チップ４のみが故障のために短絡してチップユニット１０に大電流が発生した場合でも、チップユニット１０は第１針金状部材５３ａ～第６針金状部材５３ｆのように断面の小さい複数の通電経路を備えるため、表皮効果を抑制することが可能となる。したがって、電流密度分布の顕著な粗密が発生することにより局所的に発熱密度が高くなる現象を抑制することが可能となる。局所的に発熱密度が高くなる現象を抑制することにより、第１針金状部材５３ａ～第６針金状部材５３ｆの温度上昇を抑制することが可能となる。 Next, the action and effect of the first embodiment will be described.
According to the energization structure 1 according to the first embodiment, it is possible to alleviate the skin effect by the plurality of wire-like members 53 and suppress the local increase in heat generation. That is, even if only one of the plurality of semiconductor chips 4 mounted on the power semiconductor module 100 is short-circuited due to a failure and a large current is generated in the chip unit 10, the chip unit 10 is the first. Since a plurality of electric current paths having a small cross section are provided as in the wire-shaped members 53a to the sixth wire-shaped member 53f, the skin effect can be suppressed. Therefore, it is possible to suppress the phenomenon that the heat generation density is locally increased due to the occurrence of remarkable density of the current density distribution. By suppressing the phenomenon that the heat generation density is locally increased, it is possible to suppress the temperature rise of the first wire-like member 53a to the sixth wire-like member 53f.
　仮に第１針金状部材５３ａ～第６針金状部材５３ｆの温度上昇により第１針金状部材５３ａ～第６針金状部材５３ｆが溶解して断線した場合、通電経路に隙間が発生することとなる。微小な隙間に高い電位差が生じた場合、アークが発生する。アークが発生するとパワー半導体モジュール１００が破壊される可能性がある。第１針金状部材５３ａ～第６針金状部材５３ｆの溶解を抑制することは、パワー半導体モジュール１００の破壊を抑制することにつながる。このため、第１針金状部材５３ａ～第６針金状部材５３ｆの溶解を抑制することにより高い信頼性を備える通電構造１を備えたパワー半導体モジュール１００が可能となる。 If the temperature of the first wire-like member 53a to the sixth wire-like member 53f rises and the first wire-like member 53a to the sixth wire-like member 53f melt and break, a gap will be generated in the energization path. When a high potential difference occurs in a minute gap, an arc is generated. When an arc is generated, the power semiconductor module 100 may be destroyed. Suppressing the dissolution of the first wire-like member 53a to the sixth wire-like member 53f leads to suppressing the destruction of the power semiconductor module 100. Therefore, by suppressing the melting of the first wire-like member 53a to the sixth wire-like member 53f, the power semiconductor module 100 provided with the energization structure 1 having high reliability becomes possible.
　また、第１固定部Ｆ１と第２固定部Ｆ２との間の直線距離は、一対の針金状部材５３の各々の第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３の長さよりも短いため、磁気吸引力により一対の針金状部材５３の各々が変形して破壊されることを抑制できる。 Further, the linear distance between the first fixed portion F1 and the second fixed portion F2 is based on the length of the portion F3 between the first fixed portion F1 and the second fixed portion F2 of each of the pair of wire-like members 53. Is also short, so it is possible to prevent each of the pair of wire-like members 53 from being deformed and destroyed by the magnetic attraction.
　一対の針金状部材５３の各々の第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３は、第１通電ブロック１１と第２通電ブロック１２との間に突き出して変形した状態で、直接に互いに接するように構成されており、高さ方向に連続して接する連続部分を有している。このため、磁気吸引力により一対の針金状部材５３の各々が変形して破壊されることを抑制できる。 The portion F3 between the first fixing portion F1 and the second fixing portion F2 of each of the pair of wire-shaped members 53 is in a state of being projected and deformed between the first energizing block 11 and the second energizing block 12. It is configured to be in direct contact with each other and has a continuous portion that is in continuous contact in the height direction. Therefore, it is possible to prevent each of the pair of wire-like members 53 from being deformed and destroyed by the magnetic attraction.
　例えば、一対となる第１針金状部材５３ａおよび第４針金状部材５３ｄの各々では、第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３は、互いに中心線ＣＬに対して点対称に配置されている。さらに、第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３における折り曲げ形状の合計長さの寸法は、第１通電ブロック１１の側面から第１通電ブロック１１の中心ＣＰまでの距離の２倍の寸法と、第１通電ブロック１１から第２通電ブロック１２までの＋Ｚ軸方向の距離の寸法との和と等しいか、もしくは和よりも僅かに長くなるように設けられている。 For example, in each of the pair of first wire-shaped members 53a and fourth wire-shaped members 53d, the portions F3 between the first fixed portion F1 and the second fixed portion F2 are point-symmetrical with respect to the center line CL. Is located in. Further, the total length of the bent shape in the portion F3 between the first fixed portion F1 and the second fixed portion F2 is the distance from the side surface of the first energized block 11 to the center CP of the first energized block 11. It is provided so as to be equal to or slightly longer than the sum of the double dimension and the dimension of the distance in the + Z axis direction from the first energizing block 11 to the second energizing block 12.
　第１針金状部材５３ａおよび第４針金状部材５３ｄには、同方向に電流が流れるため、互いに引き付け合う方向に力が働く。第１針金状部材５３ａには－Ｘ方向に力が働き、第４針金状部材５３ｄには＋Ｘ方向に力が働くことになる。このとき、第１針金状部材５３ａおよび第４針金状部材５３ｄは、点対称かつ磁気吸引力に対する変形に十分な長さを備えているため、互いに接触することにより直接接続される。これにより、第１針金状部材５３ａおよび第４針金状部材５３ｄに発生する応力を緩和することが可能となる。 Since the current flows through the first wire-shaped member 53a and the fourth wire-shaped member 53d in the same direction, a force acts in the direction of attracting each other. A force acts on the first wire-like member 53a in the −X direction, and a force acts on the fourth wire-like member 53d in the + X direction. At this time, since the first wire-like member 53a and the fourth wire-like member 53d are point-symmetrical and have a length sufficient for deformation with respect to the magnetic attraction force, they are directly connected by contacting each other. As a result, the stress generated in the first wire-shaped member 53a and the fourth wire-shaped member 53d can be relaxed.
　それぞれ一対となる第２針金状部材５３ｂおよび第５針金状部材５３ｅならびに第３針金状部材５３ｃおよび第６針金状部材５３ｆの形状についても同様にそれぞれに磁気吸引力が発生する。第２針金状部材５３ｂおよび第５針金状部材５３ｅならびに第３針金状部材５３ｃおよび第６針金状部材５３ｆは、点対称かつ磁気吸引力に対する変形に対して十分な長さを備えている。このため、変形してもそれぞれの第１針金状部材５３ａ～第６針金状部材５３ｆが第１通電ブロック１１および第２通電ブロック１２の中心ＣＰに向かって変位して、お互いが干渉して変形が抑制される。 Similarly, magnetic attraction is generated for the shapes of the second wire-like member 53b and the fifth wire-like member 53e, and the third wire-like member 53c and the sixth wire-like member 53f, which are paired with each other. The second wire-like member 53b and the fifth wire-like member 53e, and the third wire-like member 53c and the sixth wire-like member 53f are point-symmetrical and have a sufficient length for deformation with respect to magnetic attraction. Therefore, even if they are deformed, the first wire-shaped members 53a to the sixth wire-shaped members 53f are displaced toward the central CPs of the first energizing block 11 and the second energizing block 12, and they interfere with each other and deform. Is suppressed.
　第１針金状部材５３ａ～第６針金状部材５３ｆの各々の第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３の断面は長方形であり、長方形の長辺は、第１通電ブロック１１および第２通電ブロック１２の中心ＣＰを通る中心線ＣＬを中心とする同一円ＶＣ上に配置される。例えば、長方形断面の板バネ形状について考える。長方形断面において、断面二次モーメントの関係から短辺側に比べて、長辺側のほうが変形しにくい。従って、長辺側を同一円ＶＣ上に配置することにより、隣接する針金状部材５３の影響を抑制しつつ、第１針金状部材５３ａ～第６針金状部材５３ｆの各々は、第１通電ブロック１１および第２通電ブロック１２の中心側に変位することが可能となる。このため、長辺方向の不要な変位を抑制することが可能となる。 The cross section of the portion F3 between the first fixed portion F1 and the second fixed portion F2 of each of the first wire-shaped member 53a to the sixth wire-shaped member 53f is rectangular, and the long side of the rectangle is the first energizing block. It is arranged on the same circle VC centered on the center line CL passing through the center CP of the 11 and the second energization block 12. For example, consider a leaf spring shape with a rectangular cross section. In a rectangular cross section, the long side is less likely to be deformed than the short side due to the moment of inertia of area. Therefore, by arranging the long side side on the same circular VC, each of the first wire-like member 53a to the sixth wire-like member 53f is a first energization block while suppressing the influence of the adjacent wire-like member 53. It is possible to displace the 11 and the second energization block 12 toward the center side. Therefore, it is possible to suppress unnecessary displacement in the long side direction.
　複数の針金状部材５３は偶数本の第１針金状部材５３ａ～第６針金状部材５３ｆを含んでいる。第１針金状部材５３ａ～第６針金状部材５３ｆが偶数本で構成されることにより、第１通電ブロック１１および第２通電ブロック１２の中心ＣＰを通る中心線ＣＬに対して、対向する位置に対となる針金状部材５３を配置することが可能となるため、変位の方向を一方向に抑制できる。 The plurality of wire-like members 53 include an even number of first wire-like members 53a to sixth wire-like members 53f. Since the first wire-like member 53a to the sixth wire-like member 53f are composed of an even number of wires, the positions are opposed to the center line CL passing through the center CP of the first energization block 11 and the second energization block 12. Since the pair of wire-shaped members 53 can be arranged, the direction of displacement can be suppressed in one direction.
　また、第１針金状部材５３ａ～第６針金状部材５３ｆは、第１通電ブロック１１および第２通電ブロック１２の中心ＣＰを通る中心線ＣＬを中心とする同一円ＶＣ上に配置され、かつ同一円ＶＣ上において中心線ＣＬに対して均等の角度で配置されている。このため、隣接する針金状部材５３から受ける影響を減少することが可能となる。 Further, the first wire-like member 53a to the sixth wire-like member 53f are arranged on the same circular VC centered on the center line CL passing through the center CP of the first energization block 11 and the second energization block 12, and are the same. It is arranged at an equal angle with respect to the center line CL on the circle VC. Therefore, it is possible to reduce the influence of the adjacent wire-shaped member 53.
　なお、実施の形態１では、第１針金状部材５３ａ～第６針金状部材５３ｆが第１通電ブロック１１および第２通電ブロック１２の中心ＣＰを通る中心線ＣＬから離れる方向に突き出した例を示した。しかし、後述するように、第１針金状部材５３ａ～第６針金状部材５３ｆが、複数の曲げ部かつ複数の曲率を備えており、かつ第１通電ブロック１１および第２通電ブロック１２の中心ＣＰを通る中心線ＣＬに向けて突き出した形状を備えることにより、同様の効果を得ることが可能である。 In the first embodiment, an example is shown in which the first wire-like member 53a to the sixth wire-like member 53f project in a direction away from the center line CL passing through the center CP of the first energization block 11 and the second energization block 12. It was. However, as will be described later, the first wire-like member 53a to the sixth wire-like member 53f have a plurality of bent portions and a plurality of curvatures, and the central CP of the first energization block 11 and the second energization block 12 is provided. It is possible to obtain the same effect by providing a shape protruding toward the center line CL passing through.
　第１針金状部材５３ａ～第６針金状部材５３ｆが第１通電ブロック１１および第２通電ブロック１２の中心ＣＰを通る中心線ＣＬに向けて突き出した方が、通電時の変位量を抑制することが可能となるため、針金状部材５３が通電時に変形する際に発生する応力を減少させることが可能となる。このため、より信頼性の高いパワー半導体モジュール１００が可能となる。さらに、第１針金状部材５３ａ～第６針金状部材５３ｆが第１通電ブロック１１および第２通電ブロック１２の中心ＣＰを通る中心線ＣＬに向けて突き出す形状であれば、チップユニット１０の小型化も可能となる。 The amount of displacement during energization is suppressed when the first wire-like member 53a to the sixth wire-like member 53f protrudes toward the center line CL passing through the center CP of the first energization block 11 and the second energization block 12. Therefore, it is possible to reduce the stress generated when the wire-shaped member 53 is deformed when energized. Therefore, a more reliable power semiconductor module 100 becomes possible. Further, if the first wire-like member 53a to the sixth wire-like member 53f have a shape protruding toward the center line CL passing through the center CP of the first energization block 11 and the second energization block 12, the chip unit 10 can be downsized. Is also possible.
　実施の形態１では、複数の針金状部材が６本で構成される例を示した。しかしながら、偶数かつ均等であれば本数が多いほうが表皮効果を抑制することが可能であるため、局所的に発熱密度が高くなる現象を抑制することが可能となる。現実的な設計の上では針金状部材の本数は１６本以下が妥当であるが、チップユニット１０の大きさ次第では、更に本数を増やすことも可能である。針金状部材は、奇数でも可能であるが、偶数の方が望ましい。針金状部材が奇数であっても均等配置されていれば合力で中央に均等に力が作用する。 In the first embodiment, an example in which a plurality of wire-like members are composed of six is shown. However, if the number is even and even, the larger the number, the more the skin effect can be suppressed, so that the phenomenon of locally increasing heat generation density can be suppressed. In a realistic design, it is appropriate that the number of wire-like members is 16 or less, but it is possible to further increase the number depending on the size of the chip unit 10. The wire-like member can be an odd number, but an even number is preferable. Even if the wire-like members are odd-numbered, if they are evenly arranged, the force acts evenly in the center due to the resultant force.
　実施の形態１では、第１通電ブロック１１と第２通電ブロック１２は、正六角形で構成されているが、針金状部材５３の本数が例えば１６本の場合には、正１６角形とすることが望ましい。すなわち、針金状部材の本数と同数の正多角形とすることが望ましい。 In the first embodiment, the first energizing block 11 and the second energizing block 12 are formed in a regular hexadecagon, but when the number of wire-shaped members 53 is 16, for example, the first energizing block 11 and the second energizing block 12 may be a regular hexadecagon. desirable. That is, it is desirable to have the same number of regular polygons as the number of wire-like members.
　なお、第１通電ブロック１１と第２通電ブロック１２とは、正多角形であることが望ましいが、必ずしも正多角形である必要はない。ただし、第１通電ブロック１１と第２通電ブロック１２との対向する辺は平行であることが望ましい。 It is desirable that the first energizing block 11 and the second energizing block 12 are regular polygons, but they do not necessarily have to be regular polygons. However, it is desirable that the opposite sides of the first energizing block 11 and the second energizing block 12 are parallel.
　なお、本実施の形態では、第１針金状部材５３ａ～第６針金状部材５３ｆはそれぞれ独立して形成され、第１通電ブロック１１および第２通電ブロック１２にそれぞれ固定される例を示した。しかし、第１針金状部材５３ａ～第６針金状部材５３ｆは必ずしも独立した形状である必要はなく、第１針金状部材５３ａ～第６針金状部材５３ｆの各々の第１固定部Ｆ１および第２固定部Ｆ２の少なくともいずれかが一体で形成されていてもよい。これにより、第１固定部Ｆ１および第２固定部Ｆ２の少なくともいずれかの部品点数を削減できる。この場合、第１通電ブロック１１および第２通電ブロック１２の第１固定部Ｆ１および第２固定部Ｆ２の少なくともいずれかを円筒形状とすることでも可能である。このような構成であれば、例えば正六角形の筒形状に比べて形状が単純であるため加工し易い。そのため、加工費が安くなる。したがって、低コストなパワー半導体モジュール１００の実現が可能となる。 In the present embodiment, an example is shown in which the first wire-like member 53a to the sixth wire-like member 53f are formed independently and fixed to the first energization block 11 and the second energization block 12, respectively. However, the first wire-like member 53a to the sixth wire-like member 53f do not necessarily have to have independent shapes, and the first fixing portions F1 and the second of the first wire-like member 53a to the sixth wire-like member 53f, respectively. At least one of the fixed portions F2 may be integrally formed. As a result, the number of parts of at least one of the first fixed portion F1 and the second fixed portion F2 can be reduced. In this case, at least one of the first fixed portion F1 and the second fixed portion F2 of the first energizing block 11 and the second energizing block 12 may have a cylindrical shape. With such a configuration, it is easy to process because the shape is simpler than, for example, a regular hexagonal tubular shape. Therefore, the processing cost is reduced. Therefore, it is possible to realize a low-cost power semiconductor module 100.
　実施の形態２．
　パワー半導体モジュール１００の別構成について説明する。実施の形態２で記載されていない構成は実施の形態１と同様とし、実施の形態１と同様の構成には実施の形態１と同じ符号を付すこととする。実施の形態２では、特に言及しない限り、実施の形態１のパワー半導体モジュール１００と同様の部分については説明を繰り返さず、主として異なる点を説明する。 Embodiment 2.
Another configuration of the power semiconductor module 100 will be described. The configurations not described in the second embodiment are the same as those in the first embodiment, and the same configurations as in the first embodiment are designated by the same reference numerals as those in the first embodiment. In the second embodiment, unless otherwise specified, the same parts as those of the power semiconductor module 100 of the first embodiment will not be repeated, and mainly different points will be described.
　図６～図８は、実施の形態２に係るチップユニット１０の構成を示す図である。図６はチップユニット１０の構成を示す斜視図である。図７は、チップユニット１０の構成を示す図６のＶＩＩ－ＶＩＩ線に沿う断面図である。 6 to 8 are diagrams showing the configuration of the chip unit 10 according to the second embodiment. FIG. 6 is a perspective view showing the configuration of the chip unit 10. FIG. 7 is a cross-sectional view taken along the line VII-VII of FIG. 6 showing the configuration of the chip unit 10.
　図６および図７を参照して、チップユニット１０の構成について説明する。チップユニット１０は、通電構造１と、半導体チップ４とを含んでいる。通電構造１は、第１通電ブロック１１と、第２通電ブロック１２と、複数の針金状部材５３とを含んでいる。複数の針金状部材５３は、第１針金状部材５３ａ～第６針金状部材５３ｆを含んでいる。 The configuration of the chip unit 10 will be described with reference to FIGS. 6 and 7. The chip unit 10 includes an energizing structure 1 and a semiconductor chip 4. The energization structure 1 includes a first energization block 11, a second energization block 12, and a plurality of wire-like members 53. The plurality of wire-like members 53 include the first wire-like member 53a to the sixth wire-like member 53f.
　第１通電ブロック１１および第２通電ブロック１２ならびに複数の針金状部材５３は、例えば表面処理を施した純銅を用いて形成される。第１通電ブロック１１は、正六角柱状に構成されている。第１通電ブロック１１は、板状に構成されている。第１通電ブロック１１には孔部１１ａが設けられている。 The first energizing block 11, the second energizing block 12, and the plurality of wire-like members 53 are formed by using, for example, surface-treated pure copper. The first energizing block 11 is formed in a regular hexagonal columnar shape. The first energizing block 11 is formed in a plate shape. The first energization block 11 is provided with a hole 11a.
　第２通電ブロック１２は、段付き形状に構成されている。第２通電ブロック１２は、根元部１２ａと、張出部１２ｂとを含んでいる。根元部１２ａは、第２通電ブロック１２の－Ｚ方向側に配置されている。根元部１２ａは、四角柱状に構成されている。根元部１２ａは板状に構成されている。張出部１２ｂは、第２通電ブロック１２の＋Ｚ方向側に配置されている。張出部１２ｂは、正六角柱状に構成されている。第２通電ブロック１２は、－Ｚ方向から見て正六角形状に構成されている。第２通電ブロック１２は、板状に構成されている。 The second energizing block 12 is configured to have a stepped shape. The second energizing block 12 includes a root portion 12a and an overhanging portion 12b. The root portion 12a is arranged on the −Z direction side of the second energizing block 12. The root portion 12a is formed in a square columnar shape. The root portion 12a is formed in a plate shape. The overhanging portion 12b is arranged on the + Z direction side of the second energizing block 12. The overhanging portion 12b is formed in a regular hexagonal columnar shape. The second energizing block 12 has a regular hexagonal shape when viewed from the −Z direction. The second energizing block 12 is formed in a plate shape.
　第１通電ブロック１１および第２通電ブロック１２の張出部１２ｂの各々の正六角形は、合同である。これらの正六角形のそれぞれの辺は、互いに平行になるように配置されている。また、－Ｚ方向から見て第１通電ブロック１１の中心ＣＰと第２通電ブロック１２の中心ＣＰとを結んだ線分（中心線ＣＬ）は、Ｚ軸と略平行になるように配置される。 The regular hexagons of the overhanging portions 12b of the first energizing block 11 and the second energizing block 12 are congruent. The sides of each of these regular hexagons are arranged so that they are parallel to each other. Further, the line segment (center line CL) connecting the center CP of the first energization block 11 and the center CP of the second energization block 12 when viewed from the −Z direction is arranged so as to be substantially parallel to the Z axis. ..
　第１針金状部材５３ａは、第１通電ブロック１１の側面に固定された第１固定部Ｆ１から－Ｚ方向に延伸し、略１００度の角度で－Ｘ方向に折り曲げられて延伸する。その後、第１針金状部材５３ａは、略１００度の角度で－Ｚ方向に折り曲げられて延伸し、略１００度の角度で＋Ｘ方向に折り曲げられて延伸する。その後、略１００度の角度で－Ｚ方向に折り曲げられて延伸し、第２固定部Ｆ２で第２通電ブロック１２の側面に固定される。第１針金状部材５３ａの第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３の形状は、＋Ｚ方向における当該部分の形状の中心を通る線ＶＬに対して線対称に構成されている。線ＶＬは、第１通電ブロック１１の－Ｚ方向側の面および第２通電ブロック１２の＋Ｚ方向側の面の各々に等距離かつ平行に配置されている。 The first wire-like member 53a extends in the −Z direction from the first fixing portion F1 fixed to the side surface of the first energizing block 11, and is bent and extended in the −X direction at an angle of approximately 100 degrees. After that, the first wire-like member 53a is bent and stretched in the −Z direction at an angle of approximately 100 degrees, and is bent and stretched in the + X direction at an angle of approximately 100 degrees. After that, it is bent and stretched in the −Z direction at an angle of about 100 degrees, and is fixed to the side surface of the second energizing block 12 by the second fixing portion F2. The shape of the portion F3 between the first fixing portion F1 and the second fixing portion F2 of the first wire-like member 53a is formed line-symmetrically with respect to the line VL passing through the center of the shape of the portion in the + Z direction. There is. The wire VL is arranged equidistantly and parallel to each of the surface of the first energizing block 11 on the −Z direction side and the surface of the second energizing block 12 on the + Z direction side.
　実施の形態２に係る通電構造１は、ブロック部材１４を備えている。ブロック部材１４は、一対の針金状部材５３の各々の間に配置されている。ブロック部材１４は、第１通電ブロック１１との間に隙間をあけて配置されており、かつ第２通電ブロック１２に接触している。ブロック部材１４と一対の針金状部材５３の各々との距離はそれぞれ等しい。 The energization structure 1 according to the second embodiment includes a block member 14. The block member 14 is arranged between each of the pair of wire-like members 53. The block member 14 is arranged with a gap between it and the first energizing block 11, and is in contact with the second energizing block 12. The distance between the block member 14 and each of the pair of wire-like members 53 is equal.
　第１針金状部材５３ａ～第６針金状部材５３ｆの内側には、外周が正六角柱状のブロック部材１４が配置される。ブロック部材１４の内周には、円形の孔部１４ａが設けられている。孔部１４ａは、第１通電ブロック１１に設けられた孔部１１ａと同軸かつ同径である。 Inside the first wire-shaped member 53a to the sixth wire-shaped member 53f, a block member 14 having a regular hexagonal columnar outer circumference is arranged. A circular hole 14a is provided on the inner circumference of the block member 14. The hole portion 14a is coaxial and has the same diameter as the hole portion 11a provided in the first energization block 11.
　ブロック部材１４の孔部１４ａおよび第１通電ブロック１１の孔部１１ａに連続してバネ部材１５が配置されている。ブロック部材１４の底部にバネ部材１５が載置されている。バネ部材１５は、第１通電ブロック１１を貫通して導電性カバープレート３に接している。このため、バネ部材１５は、導電性カバープレート３を付勢する付勢力を発生させる。 The spring member 15 is continuously arranged in the hole 14a of the block member 14 and the hole 11a of the first energizing block 11. A spring member 15 is placed on the bottom of the block member 14. The spring member 15 penetrates the first energizing block 11 and is in contact with the conductive cover plate 3. Therefore, the spring member 15 generates an urging force that urges the conductive cover plate 3.
　ブロック部材１４は、例えば銅で構成されている。ブロック部材１４は、第２通電ブロック１２に対して、位置決め溝等を介してＸＹ面内方向の変位を抑制するように保持されている。さらに、組み立て時（通電時）にはブロック部材１４と第１通電ブロック１１とは、接触しないように、Ｚ軸方向に僅かな隙間をあけて配置されている。ブロック部材１４は、組み立て時に第１針金状部材５３ａ～第６針金状部材５３ｆにも接触しないように、隙間をあけて配置されている。 The block member 14 is made of, for example, copper. The block member 14 is held with respect to the second energizing block 12 so as to suppress displacement in the XY in-plane direction via a positioning groove or the like. Further, at the time of assembly (when energized), the block member 14 and the first energized block 11 are arranged with a slight gap in the Z-axis direction so as not to come into contact with each other. The block member 14 is arranged with a gap so as not to come into contact with the first wire-like member 53a to the sixth wire-like member 53f at the time of assembly.
　ブロック部材１４は、テーパ部１４ｂ、１４ｃを含んでいる。テーパ部１４ｂ、１４ｃは、第１通電ブロック１１および第２通電ブロック１２の少なくともいずれかの側の端部に設けられている。実施の形態２では、ブロック部材１４の側面に＋Ｚ方向側および－Ｚ方向側に対称形状のテーパ部１４ｂ、１４ｃが設けられている。テーパ部１４ｂ、１４ｃは、Ｚ軸方向における端部に近づくに従って広がるように構成されている。テーパ部１４ｂ、１４ｃは、ブロック部材１４の側面の直線部の両端から、それぞれ第１通電ブロック１１の－Ｚ方向側端部および第２通電ブロック１２の＋Ｚ方向側端部を結んだ線分上に配置されている。テーパ部１４ｂ、１４ｃは、Ｚ軸に対して第１針金状部材５３ａ～第６針金状部材５３ｆの曲げ角度よりも大きな角度を形成するように構成されている。 The block member 14 includes tapered portions 14b and 14c. The tapered portions 14b and 14c are provided at the ends on at least one of the first energizing block 11 and the second energizing block 12. In the second embodiment, the side surface of the block member 14 is provided with symmetrical tapered portions 14b and 14c on the + Z direction side and the −Z direction side. The tapered portions 14b and 14c are configured to expand as they approach the end portions in the Z-axis direction. The tapered portions 14b and 14c are on a line segment connecting both ends of the straight portion on the side surface of the block member 14 to the −Z direction side end portion of the first energization block 11 and the + Z direction side end portion of the second energization block 12, respectively. Is located in. The tapered portions 14b and 14c are configured to form an angle larger than the bending angle of the first wire-shaped member 53a to the sixth wire-shaped member 53f with respect to the Z axis.
　第４針金状部材５３ｄは、第１通電ブロック１１および第２通電ブロック１２の各々の正六角形の中心ＣＰを通る中心線ＣＬに対して、第１針金状部材５３ａと点対称に配置されている。 The fourth wire-shaped member 53d is arranged point-symmetrically with the first wire-shaped member 53a with respect to the center line CL passing through the center CP of each of the regular hexagons of the first energizing block 11 and the second energizing block 12. ..
　本実施の形態では、一対の針金状部材５３の各々の第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３は、間接に互いに接するように構成されている。つまり、一対の針金状部材５３の各々の第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３は、ブロック部材１４を介して互いに接するように構成されている。第１針金状部材５３ａの第１通電ブロック１１と第２通電ブロック１２との間の部分Ｆ３における折り曲げ形状の合計長さの寸法は、第１通電ブロック１１の－Ｚ方向側の側面端部からブロック部材１４の側面の直線部の＋Ｚ方向側端部までの距離の２倍の寸法と、ブロック部材１４の側面の直線部の＋Ｚ軸方向の長さの寸法との和と等しいか、もしくは和よりも僅かに長くなるように設けられている。 In the present embodiment, the portions F3 between the first fixing portion F1 and the second fixing portion F2 of each of the pair of wire-like members 53 are configured to indirectly contact each other. That is, the portion F3 between the first fixing portion F1 and the second fixing portion F2 of each of the pair of wire-shaped members 53 is configured to be in contact with each other via the block member 14. The dimension of the total length of the bent shape in the portion F3 between the first energizing block 11 and the second energizing block 12 of the first wire-shaped member 53a is from the side end portion of the first energizing block 11 on the −Z direction side. Equal to or sum of the dimension of twice the distance of the straight portion of the side surface of the block member 14 to the + Z direction side end and the dimension of the length of the straight portion of the side surface of the block member 14 in the + Z axis direction. It is provided to be slightly longer than.
　第２針金状部材５３ｂ、第３針金状部材５３ｃ、第５針金状部材５３ｅおよび第６針金状部材５３ｆについて説明する。第２針金状部材５３ｂと第５針金状部材５３ｅとは一対になっている。第２針金状部材５３ｂおよび第５針金状部材５３ｅの形状および位置関係は、第１針金状部材５３ａおよび第４針金状部材５３ｄの形状および位置関係と同様の関係となる。第３針金状部材５３ｃと第６針金状部材５３ｆとは一対になっている。第３針金状部材５３ｃおよび第６針金状部材５３ｆの形状および位置関係は、第１針金状部材５３ａおよび第４針金状部材５３ｄの形状および位置関係と同様の関係となる。第２通電ブロック１２の根元部１２ａが半導体チップ４の電極４ａに当接することにより、第２通電ブロック１２は半導体チップ４と電気的に接続されている。 The second wire-like member 53b, the third wire-like member 53c, the fifth wire-like member 53e, and the sixth wire-like member 53f will be described. The second wire-like member 53b and the fifth wire-like member 53e are paired. The shape and positional relationship of the second wire-like member 53b and the fifth wire-like member 53e are the same as the shape and positional relationship of the first wire-like member 53a and the fourth wire-like member 53d. The third wire-like member 53c and the sixth wire-like member 53f are paired. The shape and positional relationship of the third wire-like member 53c and the sixth wire-like member 53f are the same as the shape and positional relationship of the first wire-like member 53a and the fourth wire-like member 53d. The root portion 12a of the second energizing block 12 comes into contact with the electrode 4a of the semiconductor chip 4, so that the second energizing block 12 is electrically connected to the semiconductor chip 4.
　実施の形態２に係るパワー半導体モジュール１００の動作について説明する。実施の形態２に係るパワー半導体モジュール１００は、半導体チップ４が故障したときに高い信頼性を備えるためのものである。例えば、半導体チップ４が故障して、１つの半導体チップ４のみが短絡されたときについて考える。 The operation of the power semiconductor module 100 according to the second embodiment will be described. The power semiconductor module 100 according to the second embodiment is for providing high reliability when the semiconductor chip 4 fails. For example, consider a case where a semiconductor chip 4 fails and only one semiconductor chip 4 is short-circuited.
　図８は、半導体チップ４の１素子のみが短絡したときの図６のＶＩＩ－ＶＩＩ線に沿う断面図である。図８を参照して、例えば、一対となる第１針金状部材５３ａおよび第４針金状部材５３ｄには、同方向の大電流が流れるため、それぞれに大きな吸引力が働く。そのため、第１針金状部材５３ａおよび第４針金状部材５３ｄは、第１通電ブロック１１の中心方向に大きく変形する。第１針金状部材５３ａおよび第４針金状部材５３ｄは、ブロック部材１４の側面形状に沿って、張り付くように変形する。変形した第１針金状部材５３ａ～第６針金状部材５３ｆはそれぞれ変形した形状を保ちチップユニット１０の通電を維持する。第１針金状部材５３ａおよび第４針金状部材５３ｄは、磁気吸引力により変形した際に、第１通電ブロック１１と第２通電ブロック１２との間で、ブロック部材１４を介して、高さ方向（第２通電ブロック１２が第１通電ブロック１１に対向する方向）に連続して互いに接する。第１針金状部材５３ａおよび第４針金状部材５３ｄの連続部分の長さは、磁気吸引力により変形した際に、第１通電ブロック１１と第２通電ブロック１２との間でブロック部材１４に張り付く長さである。具体的には、第１針金状部材５３ａおよび第４針金状部材５３ｄは、第１通電ブロック１１と第２通電ブロック１２との間で、ブロック部材１４に高さ方向に連続して接し、かつ第１通電ブロック１１とブロック部材１４とが形成する仮想平面に対して接する長さに構成されている。 FIG. 8 is a cross-sectional view taken along the line VII-VII of FIG. 6 when only one element of the semiconductor chip 4 is short-circuited. With reference to FIG. 8, for example, a large current flows in the same direction through the pair of the first wire-shaped member 53a and the fourth wire-shaped member 53d, so that a large attractive force acts on each of them. Therefore, the first wire-like member 53a and the fourth wire-like member 53d are greatly deformed in the central direction of the first energization block 11. The first wire-shaped member 53a and the fourth wire-shaped member 53d are deformed so as to stick to each other along the side surface shape of the block member 14. The deformed first wire-shaped member 53a to the sixth wire-shaped member 53f each maintain the deformed shape and maintain the energization of the chip unit 10. When the first wire-shaped member 53a and the fourth wire-shaped member 53d are deformed by the magnetic attraction force, the first wire-shaped member 53a and the fourth wire-shaped member 53d are placed between the first energizing block 11 and the second energizing block 12 via the block member 14 in the height direction. The second energizing block 12 is continuously in contact with each other in the direction facing the first energizing block 11. The length of the continuous portion of the first wire-like member 53a and the fourth wire-like member 53d sticks to the block member 14 between the first energization block 11 and the second energization block 12 when deformed by the magnetic attraction force. The length. Specifically, the first wire-like member 53a and the fourth wire-like member 53d are in continuous contact with the block member 14 in the height direction between the first energization block 11 and the second energization block 12, and The length is configured to be in contact with the virtual plane formed by the first energizing block 11 and the block member 14.
　次に、実施の形態２の作用効果について説明する。
　実施の形態２に係る通電構造１によれば、複数の針金状部材５３により表皮効果を緩和して局所的に発熱が高くなることを抑制することができる。つまり、パワー半導体モジュール１００に搭載される複数の半導体チップ４の内、１つの半導体チップ４のみが故障のために短絡してチップユニット１０に大電流が発生した場合でも、チップユニット１０は第１針金状部材５３ａ～第６針金状部材５３ｆのように断面の小さい複数の通電経路を備えるため、表皮効果を抑制することが可能となる。したがって、電流密度分布の顕著な粗密が発生することにより局所的に発熱密度が高くなる現象を抑制することが可能となる。局所的に発熱密度が高くなる現象を抑制することにより、第１針金状部材５３ａ～第６針金状部材５３ｆの温度上昇を抑制することが可能となる。 Next, the action and effect of the second embodiment will be described.
According to the energization structure 1 according to the second embodiment, it is possible to alleviate the skin effect by the plurality of wire-like members 53 and suppress the local increase in heat generation. That is, even if only one of the plurality of semiconductor chips 4 mounted on the power semiconductor module 100 is short-circuited due to a failure and a large current is generated in the chip unit 10, the chip unit 10 is the first. Since a plurality of electric current paths having a small cross section are provided as in the wire-shaped members 53a to the sixth wire-shaped member 53f, the skin effect can be suppressed. Therefore, it is possible to suppress the phenomenon that the heat generation density is locally increased due to the occurrence of remarkable density of the current density distribution. By suppressing the phenomenon that the heat generation density is locally increased, it is possible to suppress the temperature rise of the first wire-like member 53a to the sixth wire-like member 53f.
　仮に第１針金状部材５３ａ～第６針金状部材５３ｆの温度上昇により第１針金状部材５３ａ～第６針金状部材５３ｆが溶解して断線した場合、通電経路に隙間が発生することとなる。微小な隙間に高い電位差が生じた場合、アークが発生する。アークが発生するとパワー半導体モジュール１００が破壊される可能性がある。第１針金状部材５３ａ～第６針金状部材５３ｆの溶解を抑制することは、パワー半導体モジュール１００の破壊を抑制することにつながる。このため、第１針金状部材５３ａ～第６針金状部材５３ｆの溶解を抑制することにより高い信頼性を備える通電構造１を備えたパワー半導体モジュール１００が可能となる。 If the temperature of the first wire-like member 53a to the sixth wire-like member 53f rises and the first wire-like member 53a to the sixth wire-like member 53f melt and break, a gap will be generated in the energization path. When a high potential difference occurs in a minute gap, an arc is generated. When an arc is generated, the power semiconductor module 100 may be destroyed. Suppressing the dissolution of the first wire-like member 53a to the sixth wire-like member 53f leads to suppressing the destruction of the power semiconductor module 100. Therefore, by suppressing the melting of the first wire-like member 53a to the sixth wire-like member 53f, the power semiconductor module 100 provided with the energization structure 1 having high reliability becomes possible.
　また、第１固定部Ｆ１と第２固定部Ｆ２との間の直線距離は、一対の針金状部材５３の各々の第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３の長さよりも短いため、磁気吸引力により一対の針金状部材５３の各々が変形して破壊されることを抑制できる。 Further, the linear distance between the first fixed portion F1 and the second fixed portion F2 is based on the length of the portion F3 between the first fixed portion F1 and the second fixed portion F2 of each of the pair of wire-like members 53. Is also short, so it is possible to prevent each of the pair of wire-like members 53 from being deformed and destroyed by the magnetic attraction.
　一対の針金状部材５３の各々の第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３は、第１通電ブロック１１と第２通電ブロック１２との間に突き出して変形した状態で、ブロック部材１３を介して間接に互いに接するように構成されており、高さ方向に連続して接する連続部分を有している。このため、磁気吸引力により一対の針金状部材５３の各々が変形して破壊されることを抑制できる。 The portion F3 between the first fixing portion F1 and the second fixing portion F2 of each of the pair of wire-shaped members 53 is in a state of being projected and deformed between the first energizing block 11 and the second energizing block 12. It is configured to indirectly contact each other via the block member 13, and has a continuous portion that is continuously in contact with each other in the height direction. Therefore, it is possible to prevent each of the pair of wire-like members 53 from being deformed and destroyed by the magnetic attraction.
　例えば、一対となる第１針金状部材５３ａおよび第４針金状部材５３ｄの各々では、第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３は、互いに中心線ＣＬに対して点対称に構成されている。さらに、通電構造１はブロック部材１４を備えている。第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３における折り曲げ形状の合計長さの寸法は、第１通電ブロック１１の－Ｚ方向側の側面端部からブロック部材１４の側面の直線部の＋Ｚ方向側端部までの距離の２倍の寸法と、ブロック部材１４の側面の直線部の＋Ｚ軸方向の長さの寸法との和と等しいか、もしくは和よりも僅かに長くなるように設けられている。 For example, in each of the pair of first wire-shaped members 53a and fourth wire-shaped members 53d, the portions F3 between the first fixed portion F1 and the second fixed portion F2 are point-symmetrical with respect to the center line CL. It is configured in. Further, the energization structure 1 includes a block member 14. The total length of the bent shape in the portion F3 between the first fixing portion F1 and the second fixing portion F2 is a straight line from the side end portion of the first energizing block 11 on the −Z direction side to the side surface of the block member 14. Make it equal to or slightly longer than the sum of the dimension of twice the distance to the + Z direction end of the portion and the dimension of the length of the straight portion on the side surface of the block member 14 in the + Z axis direction. It is provided in.
　第１針金状部材５３ａおよび第４針金状部材５３ｄには、同方向に電流が流れるため、互いに引き付け合う方向に力が働く。第１針金状部材５３ａには－Ｘ方向に力が働き、第４針金状部材５３ｄには＋Ｘ方向に力が働くことになる。このとき、第１針金状部材５３ａおよび第４針金状部材５３ｄは、点対称かつ磁気吸引力に対する変形に十分な長さを備えており、かつブロック部材１４で変形が抑制される。これにより、第１針金状部材５３ａおよび第４針金状部材５３ｄに発生する応力を緩和することが可能となる。 Since the current flows through the first wire-shaped member 53a and the fourth wire-shaped member 53d in the same direction, a force acts in the direction of attracting each other. A force acts on the first wire-like member 53a in the −X direction, and a force acts on the fourth wire-like member 53d in the + X direction. At this time, the first wire-shaped member 53a and the fourth wire-shaped member 53d are point-symmetrical and have a length sufficient for deformation with respect to the magnetic attraction force, and the deformation is suppressed by the block member 14. As a result, the stress generated in the first wire-shaped member 53a and the fourth wire-shaped member 53d can be relaxed.
　それぞれ一対となる第２針金状部材５３ｂおよび第５針金状部材５３ｅならびに第３針金状部材５３ｃおよび第６針金状部材５３ｆの形状についても同様にそれぞれに磁気吸引力が発生する。第２針金状部材５３ｂおよび第５針金状部材５３ｅならびに第３針金状部材５３ｃおよび第６針金状部材５３ｆは、点対称かつ磁気吸引力に対する変形に対して十分な長さを備えている。このため、変形してもそれぞれの第１針金状部材５３ａ～第６針金状部材５３ｆが第１通電ブロック１１および第２通電ブロック１２の中心に向かって変位して、ブロック部材１４により変形が抑制される。 Similarly, magnetic attraction is generated for the shapes of the second wire-like member 53b and the fifth wire-like member 53e, and the third wire-like member 53c and the sixth wire-like member 53f, which are paired with each other. The second wire-like member 53b and the fifth wire-like member 53e, and the third wire-like member 53c and the sixth wire-like member 53f are point-symmetrical and have a sufficient length for deformation with respect to magnetic attraction. Therefore, even if the first wire-like member 53a to the sixth wire-like member 53f are deformed, the first wire-like member 53a to the sixth wire-like member 53f are displaced toward the centers of the first energization block 11 and the second energization block 12, and the block member 14 suppresses the deformation. Will be done.
　ブロック部材１４はテーパ部１４ｂ、１４ｃを含んでいる。テーパ部１４ｂ、１４ｃは、ブロック部材１４の上下の端部に設けられている。テーパ部１４ｂ、１４ｃにより、第１針金状部材５３ａ～第６針金状部材５３ｆの必要な長さを削減できる。さらに故障通電時の変形量を抑制できるため、第１針金状部材５３ａ～第６針金状部材５３ｆの応力を緩和することが可能となる。したがって、第１針金状部材５３ａ～第６針金状部材５３ｆが応力で破断し難い構成となるため、低コストで信頼性の高いパワー半導体モジュール１００の実現が可能となる。 The block member 14 includes tapered portions 14b and 14c. The tapered portions 14b and 14c are provided at the upper and lower ends of the block member 14. The tapered portions 14b and 14c can reduce the required length of the first wire-like member 53a to the sixth wire-like member 53f. Further, since the amount of deformation at the time of failure energization can be suppressed, the stress of the first wire-like member 53a to the sixth wire-like member 53f can be relaxed. Therefore, since the first wire-like member 53a to the sixth wire-like member 53f are hard to break due to stress, it is possible to realize a low-cost and highly reliable power semiconductor module 100.
　バネ部材１５は、導電性カバープレート３とブロック部材１４との間に作用する付勢力（反発力）を備えている。したがって、導電性カバープレート３は、組み立て時には組み立て前に対して－Ｚ方向に圧接して保持されるため、ブロック部材１４の安定した保持が可能となるとともに、チップユニット１０が半導体チップ４を圧接する力を補助することが可能となる。 The spring member 15 has an urging force (repulsive force) acting between the conductive cover plate 3 and the block member 14. Therefore, since the conductive cover plate 3 is pressed and held in the −Z direction with respect to the state before assembly during assembly, the block member 14 can be stably held and the chip unit 10 presses and contacts the semiconductor chip 4. It is possible to assist the power to do.
　第１通電ブロック１１とブロック部材１４との間には隙間があるため、ブロック部材１４は、通常、通電経路として使用されない。しかし、故障通電時に第１針金状部材５３ａ～第６針金状部材５３ｆが破断した状態で、ブロック部材１４に張り付いたときには、ブロック部材１４を非常通電経路として使用することが可能となる。これにより、信頼性が向上する。 Since there is a gap between the first energization block 11 and the block member 14, the block member 14 is not normally used as an energization path. However, when the first wire-like member 53a to the sixth wire-like member 53f are broken and stick to the block member 14 at the time of failure energization, the block member 14 can be used as an emergency energization path. This improves reliability.
　第１針金状部材５３ａ～第６針金状部材５３ｆの各々の第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３の断面は長方形であり、長方形の長辺は第１通電ブロック１１および第２通電ブロック１２の中心ＣＰを通る中心線ＣＬを中心とする同一円ＶＣ上に配置される。例えば、長方形断面の板バネ形状について考える。長方形断面において、断面二次モーメントの関係から短辺側に比べて、長辺側のほうが変形しにくい。従って、長辺側を同一円ＶＣ上に配置することにより、隣接する針金状部材５３の影響を抑制しつつ、第１針金状部材５３ａ～第６針金状部材５３ｆの各々は、第１通電ブロック１１および第２通電ブロック１２の中心側に変位することが可能となる。このため、長辺方向の不要な変位を抑制することが可能となる。 The cross section of the portion F3 between the first fixed portion F1 and the second fixed portion F2 of each of the first wire-shaped member 53a to the sixth wire-shaped member 53f is rectangular, and the long side of the rectangle is the first energizing block 11 And they are arranged on the same circle VC centered on the center line CL passing through the center CP of the second energization block 12. For example, consider a leaf spring shape with a rectangular cross section. In a rectangular cross section, the long side is less likely to be deformed than the short side due to the moment of inertia of area. Therefore, by arranging the long side side on the same circular VC, each of the first wire-like member 53a to the sixth wire-like member 53f is a first energization block while suppressing the influence of the adjacent wire-like member 53. It is possible to displace the 11 and the second energization block 12 toward the center side. Therefore, it is possible to suppress unnecessary displacement in the long side direction.
　複数の針金状部材５３は偶数本の第１針金状部材５３ａ～第６針金状部材５３ｆを含んでいる。第１針金状部材５３ａ～第６針金状部材５３ｆが偶数本で構成されることにより、第１通電ブロック１１および第２通電ブロック１２の中心ＣＰを通る中心線ＣＬに対して、対向する位置に対となる針金状部材５３を配置することが可能となるため、変位の方向を一方向に抑制できる。また、第１針金状部材５３ａ～第６針金状部材５３ｆが第１通電ブロック１１の中心に対して同一円ＶＣ上に均等に配置されるため、隣接する針金状部材５３から受ける影響を減少することが可能となる。 The plurality of wire-like members 53 include an even number of first wire-like members 53a to sixth wire-like members 53f. Since the first wire-like member 53a to the sixth wire-like member 53f are composed of an even number of wires, the positions are opposed to the center line CL passing through the center CP of the first energization block 11 and the second energization block 12. Since the pair of wire-shaped members 53 can be arranged, the direction of displacement can be suppressed in one direction. Further, since the first wire-like member 53a to the sixth wire-like member 53f are evenly arranged on the same circular VC with respect to the center of the first energization block 11, the influence of the adjacent wire-like member 53 is reduced. It becomes possible.
　なお、実施の形態２では、第１針金状部材５３ａ～第６針金状部材５３ｆが第１通電ブロック１１および第２通電ブロック１２の中心ＣＰを通る中心線ＣＬから離れる方向に突き出した例を示した。しかし、後述するように、第１針金状部材５３ａ～第６針金状部材５３ｆが、複数の曲げ部かつ複数の曲率を備えており、かつ第１通電ブロック１１および第２通電ブロック１２の中心ＣＰを通る中心線ＣＬに向けて突き出した形状を備えることにより、同様の効果を得ることが可能である。 In the second embodiment, an example is shown in which the first wire-like member 53a to the sixth wire-like member 53f project in a direction away from the center line CL passing through the center CP of the first energization block 11 and the second energization block 12. It was. However, as will be described later, the first wire-like member 53a to the sixth wire-like member 53f have a plurality of bent portions and a plurality of curvatures, and the central CP of the first energization block 11 and the second energization block 12 is provided. It is possible to obtain the same effect by providing a shape protruding toward the center line CL passing through.
　本実施の形態では、複数の針金状部材が６本で構成される例を示した。しかしながら、偶数かつ均等であれば本数が多いほうが表皮効果を抑制することが可能であるため、局所的に発熱密度が高くなる現象を抑制することが可能となる。現実的な設計の上では針金状部材の本数は１６本以下が妥当であるが、チップユニット１０の大きさ次第では、更に本数を増やすことも可能である。針金状部材は、奇数でも可能であるが、偶数の方が望ましい。針金状部材が奇数であっても均等配置されていれば合力で中央に均等に力が作用する。 In the present embodiment, an example in which a plurality of wire-like members are composed of six is shown. However, if the number is even and even, the larger the number, the more the skin effect can be suppressed, so that the phenomenon of locally increasing heat generation density can be suppressed. In a realistic design, it is appropriate that the number of wire-like members is 16 or less, but it is possible to further increase the number depending on the size of the chip unit 10. The wire-like member can be an odd number, but an even number is preferable. Even if the wire-like members are odd-numbered, if they are evenly arranged, the force acts evenly in the center due to the resultant force.
　実施の形態２では、第１通電ブロック１１と第２通電ブロック１２は、正六角形で構成されているが、針金状部材の本数が例えば１６本の場合には、正１６角形とすることが望ましい。すなわち、針金状部材の本数と同数の正多角形とすることが望ましい。 In the second embodiment, the first energizing block 11 and the second energizing block 12 are formed in a regular hexadecagon, but when the number of wire-like members is 16, for example, it is desirable to have a regular hexadecagon. .. That is, it is desirable to have the same number of regular polygons as the number of wire-like members.
　なお、第１通電ブロック１１と第２通電ブロック１２とは、正多角形であることが望ましいが、必ずしも正多角形である必要はない。ただし、第１通電ブロック１１と第２通電ブロック１２との対向する辺は平行であることが望ましい。 It is desirable that the first energizing block 11 and the second energizing block 12 are regular polygons, but they do not necessarily have to be regular polygons. However, it is desirable that the opposite sides of the first energizing block 11 and the second energizing block 12 are parallel.
　なお、本実施の形態では、第１針金状部材５３ａ～第６針金状部材５３ｆはそれぞれ独立して形成され、第１通電ブロック１１および第２通電ブロック１２にそれぞれ固定される例を示した。しかし、第１針金状部材５３ａ～第６針金状部材５３ｆは必ずしも独立した形状である必要はなく、第１針金状部材５３ａ～第６針金状部材５３ｆの各々の第１固定部Ｆ１および第２固定部Ｆ２の少なくともいずれかが一体で形成されていてもよい。これにより、第１固定部Ｆ１および第２固定部Ｆ２の少なくともいずれかの部品点数を削減できる。この場合、第１通電ブロック１１および第２通電ブロック１２の第１固定部Ｆ１および第２固定部Ｆ２の少なくともいずれかを円筒形状とすることでも可能である。このような構成であれば、例えば正六角形の筒形状に比べて形状が単純であるため加工し易い。そのため、加工費が安くなる。したがって、低コストなパワー半導体モジュール１００の実現が可能となる。 In the present embodiment, an example is shown in which the first wire-like member 53a to the sixth wire-like member 53f are formed independently and fixed to the first energization block 11 and the second energization block 12, respectively. However, the first wire-like member 53a to the sixth wire-like member 53f do not necessarily have to have independent shapes, and the first fixing portions F1 and the second of the first wire-like member 53a to the sixth wire-like member 53f, respectively. At least one of the fixed portions F2 may be integrally formed. As a result, the number of parts of at least one of the first fixed portion F1 and the second fixed portion F2 can be reduced. In this case, at least one of the first fixed portion F1 and the second fixed portion F2 of the first energizing block 11 and the second energizing block 12 may have a cylindrical shape. With such a configuration, it is easy to process because the shape is simpler than, for example, a regular hexagonal tubular shape. Therefore, the processing cost is reduced. Therefore, it is possible to realize a low-cost power semiconductor module 100.
　なお、実施の形態２では、ブロック部材１４は銅で構成する例を示したが、高剛性材料であれば同様の効果を得ることは可能であり、樹脂の場合は非常通電経路としての機能は失うが、第１針金状部材５３ａ～第６針金状部材５３ｆの変形を抑制する機能を備えることが可能である。 In the second embodiment, an example in which the block member 14 is made of copper is shown, but the same effect can be obtained if it is a high-rigidity material, and in the case of resin, the function as an emergency energization path is Although it is lost, it is possible to have a function of suppressing deformation of the first wire-like member 53a to the sixth wire-like member 53f.
　次に、実施の形態２の変形例１～４について説明する。実施の形態の２の変形例１～４では、特に言及しない限り、実施の形態２のパワー半導体モジュール１００と同様の部分については説明を繰り返さず、主として異なる点を説明する。 Next, modifications 1 to 4 of the second embodiment will be described. In the first to fourth modifications of the second embodiment, unless otherwise specified, the same parts as the power semiconductor module 100 of the second embodiment will not be repeated, and mainly different points will be described.
　図９を参照して、実施の形態２の変形例１について説明する。図９は、実施の形態２の変形例１を示すための図６のＩＸ－ＩＸ線に沿う断面位置での断面図である。図９は、第１針金状部材５３ａ～第６針金状部材５３ｆの断面形状の変形例を示すための断面図である。 A modified example 1 of the second embodiment will be described with reference to FIG. FIG. 9 is a cross-sectional view taken along the line IX-IX of FIG. 6 to show a modification 1 of the second embodiment. FIG. 9 is a cross-sectional view for showing a modified example of the cross-sectional shape of the first wire-shaped member 53a to the sixth wire-shaped member 53f.
　実施の形態２の変形例１では、第１針金状部材５３ａ～第６針金状部材５３ｆの各々の第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３の断面は、円である。この円の半径は、想定されるシステムにおいて発生する故障モードの電流波形に対する表皮深さと同等あるいはそれ以上とすることが望ましい。 In the first modification of the second embodiment, the cross section of the portion F3 between the first fixed portion F1 and the second fixed portion F2 of each of the first wire-shaped member 53a to the sixth wire-shaped member 53f is a circle. .. The radius of this circle should be equal to or greater than the skin depth with respect to the current waveform of the failure mode that occurs in the assumed system.
　以上の構成により、実施の形態２の変形例１では、第１針金状部材５３ａ～第６針金状部材５３ｆの各々の第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３の断面は、円である。円形の断面は表皮効果に対して最も効果的な形状であるため、最も少ない断面積で高い発熱密度抑制効果を備えることが可能となる。 With the above configuration, in the first modification of the second embodiment, the cross section of the portion F3 between the first fixed portion F1 and the second fixed portion F2 of each of the first wire-shaped member 53a to the sixth wire-shaped member 53f. Is a circle. Since the circular cross section is the most effective shape for the skin effect, it is possible to have a high heat generation density suppressing effect with the smallest cross-sectional area.
　図１０を参照して、実施の形態２の変形例２について説明する。図１０は、実施の形態２の変形例２を示すための図６のＩＸ－ＩＸに沿う断面位置での断面図である。図１０は、第１針金状部材５３ａ～第６針金状部材５３ｆの断面形状の変形例を示すための図である。 A modified example 2 of the second embodiment will be described with reference to FIG. FIG. 10 is a cross-sectional view taken along the line IX-IX of FIG. 6 to show a modified example 2 of the second embodiment. FIG. 10 is a diagram for showing a modified example of the cross-sectional shape of the first wire-shaped member 53a to the sixth wire-shaped member 53f.
　実施の形態２の変形例２では、第１針金状部材５３ａ～第６針金状部材５３ｆの各々の第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３の断面は、楕円である。この楕円の長軸は、想定されるシステムにおいて発生する故障モードの電流波形に対する表皮深さと同等あるいはそれ以上とすることが望ましい。第１針金状部材５３ａ～第６針金状部材５３ｆの各々における楕円の長軸は、第１通電ブロック１１および第２通電ブロック１２の中心ＣＰを通る中心線ＣＬを中心とする同一円ＶＣ上に配置される。 In the second modification of the second embodiment, the cross section of the portion F3 between the first fixed portion F1 and the second fixed portion F2 of each of the first wire-shaped member 53a to the sixth wire-shaped member 53f is elliptical. .. The long axis of this ellipse should be equal to or greater than the skin depth with respect to the current waveform of the failure mode that occurs in the assumed system. The long axis of the ellipse in each of the first wire-like member 53a to the sixth wire-like member 53f is on the same circular VC centered on the center line CL passing through the center CP of the first energization block 11 and the second energization block 12. Be placed.
　以上の構成により、実施の形態２の変形例２では、第１針金状部材５３ａ～第６針金状部材５３ｆの各々の第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３の断面は、楕円である。楕円の断面は矩形に比べて表皮効果に対して効果的な形状であるため、矩形に比べて少ない断面積で高い発熱密度抑制効果を備えることが可能となる。 With the above configuration, in the second modification of the second embodiment, the cross section of the portion F3 between the first fixed portion F1 and the second fixed portion F2 of each of the first wire-shaped member 53a to the sixth wire-shaped member 53f. Is an ellipse. Since the cross section of the ellipse has a shape that is more effective for the skin effect than the rectangle, it is possible to have a high heat generation density suppressing effect with a smaller cross section than the rectangle.
　第１針金状部材５３ａ～第６針金状部材５３ｆの各々における楕円の長軸は、第１通電ブロック１１および第２通電ブロック１２の中心ＣＰを通る中心線ＣＬを中心とする同一円ＶＣ上に配置される。このため、隣り合う針金状部材５３方向の影響を緩和することが可能となる。 The long axis of the ellipse in each of the first wire-like member 53a to the sixth wire-like member 53f is on the same circular VC centered on the center line CL passing through the center CP of the first energization block 11 and the second energization block 12. Be placed. Therefore, it is possible to mitigate the influence of the adjacent wire-shaped members 53 in the direction.
　図１１を参照して、実施の形態２の変形例３について説明する。図１１は、実施の形態２の変形例３を示すための図６のＩＸ－ＩＸに沿う断面位置での断面図である。図１１は、第１針金状部材５３ａ～第６針金状部材５３ｆおよび第７針金状部材５４ａ～第１２針金状部材５４ｆの断面形状の変形例を示すための図である。 A modified example 3 of the second embodiment will be described with reference to FIG. FIG. 11 is a cross-sectional view taken along the line IX-IX of FIG. 6 to show a modified example 3 of the second embodiment. FIG. 11 is a diagram for showing a modified example of the cross-sectional shape of the first wire-like member 53a to the sixth wire-like member 53f and the seventh wire-like member 54a to the twelfth wire-like member 54f.
　実施の形態３の変形例３では、複数の針金状部材５３は、同一円ＶＣの半径方向に重ねて配置された一組の針金状部材５３を含んでいる。複数の針金状部材５３は、第１針金状部材５３ａ～第６針金状部材５３ｆおよび第７針金状部材５４ａ～第１２針金状部材５４ｆを含んでいる。第１針金状部材５３ａ～第６針金状部材５３ｆの各々は、第７針金状部材５４ａ～第１２針金状部材５４ｆの各々とそれぞれ一組に構成されている。第１針金状部材５３ａ～第６針金状部材５３ｆの各々は、第７針金状部材５４ａ～第１２針金状部材５４ｆの各々とそれぞれ同一円ＶＣの半径方向に重ねて配置されている。 In the third modification of the third embodiment, the plurality of wire-like members 53 include a set of wire-like members 53 arranged so as to be overlapped in the radial direction of the same circle VC. The plurality of wire-like members 53 include a first wire-like member 53a to a sixth wire-like member 53f and a seventh wire-like member 54a to a twelfth wire-like member 54f. Each of the first wire-like member 53a to the sixth wire-like member 53f is configured as a set with each of the seventh wire-like member 54a to the twelfth wire-like member 54f. Each of the first wire-like member 53a to the sixth wire-like member 53f is arranged so as to be overlapped with each of the seventh wire-like member 54a to the twelfth wire-like member 54f in the radial direction of the same circle VC.
　第１針金状部材５３ａ～第６針金状部材５３ｆの各々の第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３の断面は、長方形である。この長方形の長辺は、同一円ＶＣ上に配置されている。この長方形の長辺は、同一円ＶＣの接線に沿って配置されている。この長方形の短辺は、同一円ＶＣの中心と接点とを結ぶ線に沿って配置されている。長辺は短辺に対して４倍以上８倍以下程度の長さとなるように構成されている。複数の針金状部材５３の各々が短辺方向に弾性を有するように、短辺は２ｍｍ以下が好ましく、１ｍｍ以下がさらに好ましい。 The cross section of the portion F3 between the first fixed portion F1 and the second fixed portion F2 of each of the first wire-shaped member 53a to the sixth wire-shaped member 53f is rectangular. The long sides of this rectangle are arranged on the same circle VC. The long sides of this rectangle are arranged along the tangent of the same circle VC. The short sides of this rectangle are arranged along a line connecting the center and the contact point of the same circle VC. The long side is configured to be about 4 times or more and 8 times or less the length of the short side. The short side is preferably 2 mm or less, and more preferably 1 mm or less so that each of the plurality of wire-like members 53 has elasticity in the short side direction.
　第１針金状部材５３ａ～第６針金状部材５３ｆの外側の側面には、同一形状の断面を有する第７針金状部材５４ａ～第１２針金状部材５４ｆがそれぞれ配置される。第７針金状部材５４ａ～第１２針金状部材５４ｆの各々の第１固定部Ｆ１と第２固定部Ｆ２との間の部分Ｆ３の断面は、長方形である。この長方形の長辺は、同一円ＶＣ上に配置されている。この長方形の長辺は、同一円ＶＣの接線に沿って配置されている。 The seventh wire-like member 54a to the twelfth wire-like member 54f having the same cross section are arranged on the outer side surfaces of the first wire-like member 53a to the sixth wire-like member 53f, respectively. The cross section of the portion F3 between the first fixed portion F1 and the second fixed portion F2 of each of the seventh wire-shaped member 54a to the twelfth wire-shaped member 54f is rectangular. The long sides of this rectangle are arranged on the same circle VC. The long sides of this rectangle are arranged along the tangent of the same circle VC.
　以上の構成により、実施の形態２の変形例３によれば、パワー半導体モジュール１００に搭載される複数の半導体チップ４の内、１つの半導体チップ４のみが故障のために短絡してチップユニット１０に大電流が発生した場合でも、チップユニット１０は第１針金状部材５３ａ～第６針金状部材５３ｆおよび第７針金状部材５４ａ～第１２針金状部材５４ｆのように断面の小さい複数の通電経路を備えるため、表皮効果を抑制することが可能となる。したがって、電流密度分布の顕著な粗密が発生することにより局所的に発熱密度が高くなる現象を抑制することが可能となる。局所的に発熱密度が高くなる現象を抑制することにより、第１針金状部材５３ａ～第６針金状部材５３ｆおよび第７針金状部材５４ａ～第１２針金状部材５４ｆの温度上昇を抑制することが可能となる。 With the above configuration, according to the third modification of the second embodiment, only one of the plurality of semiconductor chips 4 mounted on the power semiconductor module 100 is short-circuited due to a failure, and the chip unit 10 Even when a large current is generated in the chip unit 10, the chip unit 10 has a plurality of energization paths having a small cross section such as the first wire-like member 53a to the sixth wire-like member 53f and the seventh wire-like member 54a to the twelfth wire-like member 54f. Therefore, it is possible to suppress the epidermis effect. Therefore, it is possible to suppress the phenomenon that the heat generation density is locally increased due to the occurrence of remarkable coarseness and density of the current density distribution. By suppressing the phenomenon that the heat generation density is locally increased, it is possible to suppress the temperature rise of the first wire-like member 53a to the sixth wire-like member 53f and the seventh wire-like member 54a to the twelfth wire-like member 54f. It will be possible.
　また、第１針金状部材５３ａ～第６針金状部材５３ｆおよび第７針金状部材５４ａ～第１２針金状部材５４ｆのそれぞれに電流が流れる。このため、例えば、一組の第１針金状部材５３ａと第７針金状部材５４ａとを合成した形状に対して、発熱密度分布を抑制することが可能となる。これにより、温度上昇を抑制することが可能となる。 Further, an electric current flows through each of the first wire-like member 53a to the sixth wire-like member 53f and the seventh wire-like member 54a to the twelfth wire-like member 54f. Therefore, for example, it is possible to suppress the heat generation density distribution for a shape in which a set of the first wire-like member 53a and the seventh wire-like member 54a are combined. This makes it possible to suppress the temperature rise.
　また、第１針金状部材５３ａ～第６針金状部材５３ｆおよび第７針金状部材５４ａ～第１２針金状部材５４ｆの断面の長方形の長辺は、同一円ＶＣ上に配置される。このため、隣り合う針金状部材５３方向の影響を緩和することが可能となる。 Further, the long sides of the rectangles of the cross sections of the first wire-like member 53a to the sixth wire-like member 53f and the seventh wire-like member 54a to the twelfth wire-like member 54f are arranged on the same circle VC. Therefore, it is possible to mitigate the influence of the adjacent wire-shaped members 53 in the direction.
　図１２および図１３を参照して、実施の形態２の変形例４について説明する。図１２は、実施の形態２の変形例４の一例を示すための針金状部材の斜視図である。図１３は、実施の形態２の変形例の別例を示すための針金状部材の斜視図である。図１２および図１３は、針金状部材の曲げ形状の変形例を示すための斜視図である。なお、針金状部は、実施の形態２と同様に、１個のチップユニット１０に対して６個使用される。 A modified example 4 of the second embodiment will be described with reference to FIGS. 12 and 13. FIG. 12 is a perspective view of a wire-shaped member for showing an example of the modified example 4 of the second embodiment. FIG. 13 is a perspective view of a wire-shaped member for showing another example of the modified example of the second embodiment. 12 and 13 are perspective views for showing a modified example of the bent shape of the wire-shaped member. As in the second embodiment, six wire-shaped portions are used for one chip unit 10.
　図１２を参照して、実施の形態２の変形例４の一例における針金状部材６３について説明する。針金状部材６３は、複数の曲げ部６３ａ～６３ｅを含んでいる。具体的には、針金状部材６３は、５箇所の曲げ部６３ａ～６３ｅを備えている。複数の曲げ部６３ａ～６３ｅの各々は、一対の針金状部材５３が向かい合う方向に曲げられている。複数の曲げ部６３ａ～６３ｅの少なくとも１つは、第１通電ブロック１１と第２通電ブロック１２との間に突き出すように構成されている。曲げ部６３ａ、６３ｅはそれぞれ同じ角度で曲げられている。曲げ部６３ｂ、６３ｃ、６３ｄはそれぞれ同じ角度で曲げられている。曲げ部６３ｂ、６３ｃ、６３ｄは曲げ部６３ａ、６３ｅよりも小さい曲率を備える。 The wire-like member 63 in an example of the modified example 4 of the second embodiment will be described with reference to FIG. The wire-like member 63 includes a plurality of bent portions 63a to 63e. Specifically, the wire-shaped member 63 includes five bent portions 63a to 63e. Each of the plurality of bent portions 63a to 63e is bent in a direction in which a pair of wire-like members 53 face each other. At least one of the plurality of bent portions 63a to 63e is configured to project between the first energizing block 11 and the second energizing block 12. The bent portions 63a and 63e are bent at the same angle, respectively. The bent portions 63b, 63c, and 63d are bent at the same angle, respectively. The bent portions 63b, 63c, 63d have a curvature smaller than that of the bent portions 63a, 63e.
　図１３を参照して、実施の形態２の変形例４の別例における針金状部材７３について説明する。針金状部材７３は、５箇所の曲げ部７３ａ～７３ｅを備えている。曲げ部７３ａ、７３ｅはそれぞれ同じ角度で曲げられている。曲げ部７３ｂ、７３ｄはそれぞれ同じ角度で曲げられている。また、曲げ部７３ｃは第１通電ブロックの外周方向に大きなＲ形状を備えている。曲げ部７３ｃはＣ字状に曲げられている。曲げ部７３ｂ、７ｄは曲げ部７３ａ、７３ｅよりも小さい曲率を備えている。曲げ部７３ａ、７３ｅは曲げ部７３ｃよりも小さい曲率を備えている。 The wire-like member 73 in another example of the modified example 4 of the second embodiment will be described with reference to FIG. The wire-like member 73 includes five bent portions 73a to 73e. The bent portions 73a and 73e are bent at the same angle, respectively. The bent portions 73b and 73d are bent at the same angle, respectively. Further, the bent portion 73c has a large R shape in the outer peripheral direction of the first energizing block. The bent portion 73c is bent in a C shape. The bent portions 73b and 7d have a curvature smaller than that of the bent portions 73a and 73e. The bent portions 73a and 73e have a curvature smaller than that of the bent portion 73c.
　針金状部材６３および針金状部材７３に共通している点は、複数の曲率を備えた曲げ部６３ａ～６３ｅ、７３ａ～７３ｅを備えている点である。曲げ部６３ａ～６３ｅ、７３ａ～７３ｅの長さは、第１通電ブロック１１の－Ｚ方向側の側面端部からブロック部材１４の側面の直線部の＋Ｚ方向側端部までの距離の２倍と、ブロック部材１４の側面の直線部の長さの和と等しいか、もしくは僅かに長くなる。 What is common to the wire-shaped member 63 and the wire-shaped member 73 is that the bent portions 63a to 63e and 73a to 73e having a plurality of curvatures are provided. The lengths of the bent portions 63a to 63e and 73a to 73e are twice the distance from the side end portion of the first energizing block 11 on the −Z direction side to the + Z direction side end portion of the straight portion of the side surface of the block member 14. , Is equal to or slightly longer than the sum of the lengths of the straight portions on the side surface of the block member 14.
　以上の構成により、実施の形態２の変形例４によれば、パワー半導体モジュール１００に搭載される複数の半導体チップ４の内、１つの半導体チップ４のみが故障のために短絡してチップユニット１０に大電流が発生した場合でも、針金状部材６３および針金状部材７３は、磁気吸引力に対する変形に十分な長さを備えている。変形した針金状部材６３および針金状部材７３は、ブロック部材１４で変位が抑制されるため、針金状部材６３および針金状部材７３に発生する応力を緩和することが可能となる。 With the above configuration, according to the modified example 4 of the second embodiment, only one of the plurality of semiconductor chips 4 mounted on the power semiconductor module 100 is short-circuited due to a failure, and the chip unit 10 The wire-like member 63 and the wire-like member 73 have a sufficient length for deformation with respect to a magnetic attraction force even when a large current is generated in the wire. Since the deformed wire-like member 63 and the wire-like member 73 are restrained from being displaced by the block member 14, the stress generated in the wire-like member 63 and the wire-like member 73 can be relaxed.
　また、複数の曲げ部６３ａ～６３ｅ、７３ａ～７３ｅにより針金状部材６３および針金状部材７３の全長が長くなる。このため、Ｘ方向への曲げ部６３ａ～６３ｅ、７３ａ～７３ｅの構成に必要な長さを低減することが可能となる。つまり、針金状部材６３および針金状部材７３のＸ方向に突き出す量を低減することが可能となる。このため、小型のチップユニット１０を実現することが可能となる。したがって、小型のパワー半導体モジュール１００を実現することが可能となる。 Further, the total lengths of the wire-like member 63 and the wire-like member 73 are lengthened by the plurality of bent portions 63a to 63e and 73a to 73e. Therefore, it is possible to reduce the length required for the configuration of the bent portions 63a to 63e and 73a to 73e in the X direction. That is, it is possible to reduce the amount of the wire-shaped member 63 and the wire-shaped member 73 protruding in the X direction. Therefore, it is possible to realize a small chip unit 10. Therefore, it is possible to realize a small power semiconductor module 100.
　今回開示された実施の形態はすべての点で例示であって制限的なものではないと考えられるべきである。本発明の範囲は上記した説明ではなくて請求の範囲によって示され、請求の範囲と均等の意味および範囲内でのすべての変更が含まれることが意図される。 It should be considered that the embodiments disclosed this time are exemplary in all respects and not restrictive. The scope of the present invention is shown by the claims rather than the above description, and it is intended to include all modifications within the meaning and scope of the claims.
　１　通電構造、２　導電性ベースプレート、３　導電性カバープレート、４　半導体チップ、４ａ　電極、５　樹脂フレーム、６　金属板、１０　チップユニット、１１　第１通電ブロック、１１ａ，１４ａ　孔部、１２　第２通電ブロック、１２ａ　根元部、１２ｂ　張出部、１４　ブロック部材、１４ａ，１４ｂ　テーパ部、１５　バネ部材、５３，６３，７３　針金状部材、６３ａ～６３ｅ，７３ａ～７３ｅ　曲げ部、１００　パワー半導体モジュール、Ｆ１　第１固定部、Ｆ２　第２固定部、Ｆ３　部分、ＶＣ　同一円、ＶＬ　線。 1 Energization structure, 2 Conductive base plate, 3 Conductive cover plate, 4 Semiconductor chip, 4a electrode, 5 Resin frame, 6 Metal plate, 10 Chip unit, 11 1st energization block, 11a, 14a hole, 12 2nd energization Block, 12a root part, 12b overhang part, 14 block member, 14a, 14b taper part, 15 spring member, 53, 63, 73 wire-like member, 63a-63e, 73a-73e bending part, 100 power semiconductor module, F1 1st fixed part, F2 2nd fixed part, F3 part, VC same circle, VL wire.

Claims (16)

  1. 　第１通電ブロックと、
    　前記第１通電ブロックに対向する第２通電ブロックと、
    　前記第１通電ブロックと前記第２通電ブロックとに接続され、かつ導電性を有し非直線形状の複数の針金状部材とを備え、
    　前記複数の針金状部材は、前記第１通電ブロックおよび前記第２通電ブロックを挟んで向かい合うように配置された一対の針金状部材を含み、
    　前記一対の針金状部材の各々は、前記第１通電ブロックに固定された第１固定部と、前記第２通電ブロックに固定された第２固定部とを含み、
    　前記第１固定部と前記第２固定部との間の直線距離は、前記一対の針金状部材の各々の前記第１固定部と前記第２固定部との間の部分の長さよりも短い、通電構造。     With the first energizing block,
    The second energizing block facing the first energizing block and
    A plurality of wire-like members connected to the first energizing block and the second energizing block, which are conductive and have a non-linear shape, are provided.
    The plurality of wire-like members include a pair of wire-like members arranged so as to face each other with the first energization block and the second energization block interposed therebetween.
    Each of the pair of wire-like members includes a first fixing portion fixed to the first energizing block and a second fixing portion fixed to the second energizing block.
    The linear distance between the first fixing portion and the second fixing portion is shorter than the length of the portion between the first fixing portion and the second fixing portion of each of the pair of wire-like members. Energized structure.
  2. 　前記一対の針金状部材の各々の前記第１固定部と前記第２固定部との間の前記部分は、前記第１通電ブロックと前記第２通電ブロックとの間に突き出すように変形した状態で、直接または間接に互いに接するように構成されており、高さ方向に連続して接する連続部分を有している、請求項１に記載の通電構造。 The portion between the first fixing portion and the second fixing portion of each of the pair of wire-like members is deformed so as to protrude between the first energizing block and the second energizing block. The energization structure according to claim 1, wherein the energization structure is configured to be in direct or indirect contact with each other and has a continuous portion that is in continuous contact in the height direction.
  3. 　前記一対の針金状部材の各々の間に配置されたブロック部材をさらに備え、
    　前記ブロック部材は、前記第１通電ブロックとの間に隙間をあけて配置されており、かつ前記第２通電ブロックに接触している、請求項１または２に記載の通電構造。     A block member arranged between each of the pair of wire-like members is further provided.
    The energization structure according to claim 1 or 2, wherein the block member is arranged with a gap between the block member and the first energization block, and is in contact with the second energization block.
  4. 　前記ブロック部材と前記一対の針金状部材の各々との距離はそれぞれ等しい、請求項３に記載の通電構造。 The energization structure according to claim 3, wherein the distance between the block member and each of the pair of wire-like members is equal.
  5. 　前記ブロック部材は、前記第１通電ブロックおよび前記第２通電ブロックの少なくともいずれかの側の端部に設けられたテーパ部を含み、
    　前記テーパ部は、前記端部に近づくに従って広がるように構成されている、請求項３または４に記載の通電構造。     The block member includes a tapered portion provided at an end portion on at least one of the first energizing block and the second energizing block.
    The energizing structure according to claim 3 or 4, wherein the tapered portion is configured to expand as it approaches the end portion.
  6. 　前記複数の針金状部材の各々の厚みは、前記第１通電ブロックの厚みよりも薄い、請求項１～５のいずれか１項に記載の通電構造。 The energization structure according to any one of claims 1 to 5, wherein the thickness of each of the plurality of wire-like members is thinner than the thickness of the first energization block.
  7. 　前記第１通電ブロックには孔部が設けられており、
    　前記孔部は、前記第２通電ブロックが前記第１通電ブロックに対向する方向に、前記第１通電ブロックを貫通している、請求項１～６のいずれか１項に記載の通電構造。     The first energization block is provided with a hole.
    The energization structure according to any one of claims 1 to 6, wherein the hole portion penetrates the first energization block in a direction in which the second energization block faces the first energization block.
  8. 　前記一対の針金状部材の各々の前記第１固定部と前記第２固定部との間の前記部分の幅は、前記第１固定部および前記第２固定部の各々の幅よりも狭い、請求項１～７のいずれか１項に記載の通電構造。 A claim that the width of the portion between the first fixing portion and the second fixing portion of each of the pair of wire-like members is narrower than the width of each of the first fixing portion and the second fixing portion. Item 5. The energizing structure according to any one of Items 1 to 7.
  9. 　前記複数の針金状部材の各々の前記第１固定部と前記第２固定部との間の前記部分の断面は、円である、請求項１～８のいずれか１項に記載の通電構造。 The energization structure according to any one of claims 1 to 8, wherein the cross section of the portion between the first fixing portion and the second fixing portion of each of the plurality of wire-like members is a circle.
  10. 　前記複数の針金状部材の各々は、前記第１通電ブロックおよび前記第２通電ブロックの各々の中心を通る中心線を中心とする同一円上に配置され、かつ前記同一円上において前記中心線に対して均等の角度で配置されている、請求項１～９のいずれか１項に記載の通電構造。 Each of the plurality of wire-like members is arranged on the same circle centered on the center line passing through the center of each of the first energizing block and the second energizing block, and on the same circle, on the center line. The energization structure according to any one of claims 1 to 9, which is arranged at equal angles to the current.
  11. 　前記複数の針金状部材の各々の前記第１固定部と前記第２固定部との間の前記部分の断面は、長方形であり、
    　前記長方形の長辺が前記同一円上に配置されている、請求項１０に記載の通電構造。     The cross section of the portion between the first fixing portion and the second fixing portion of each of the plurality of wire-like members is rectangular.
    The energization structure according to claim 10, wherein the long sides of the rectangle are arranged on the same circle.
  12. 　前記複数の針金状部材は、前記同一円の半径方向に重ねて配置された一組の針金状部材を含む、請求項１０または１１に記載の通電構造。 The energization structure according to claim 10 or 11, wherein the plurality of wire-like members include a set of wire-like members arranged so as to be stacked in the radial direction of the same circle.
  13. 　前記複数の針金状部材の各々の前記第１固定部と前記第２固定部との間の前記部分の断面は、楕円であり、
    　前記楕円の長軸が前記同一円上に配置されている、請求項１０に記載の通電構造。     The cross section of the portion between the first fixing portion and the second fixing portion of each of the plurality of wire-like members is elliptical.
    The energization structure according to claim 10, wherein the long axis of the ellipse is arranged on the same circle.
  14. 　前記複数の針金状部材の各々は複数の曲げ部を含み、
    　前記複数の曲げ部の各々は、前記一対の針金状部材が向かい合う方向に曲げられており、
    　前記複数の曲げ部の少なくとも１つは、前記第１通電ブロックと前記第２通電ブロックとの間に突き出すように構成されている、請求項１～１３のいずれか１項に記載の通電構造。     Each of the plurality of wire-like members includes a plurality of bent portions.
    Each of the plurality of bent portions is bent in a direction in which the pair of wire-like members face each other.
    The energization structure according to any one of claims 1 to 13, wherein at least one of the plurality of bent portions is configured to project between the first energization block and the second energization block.
  15. 　前記第１通電ブロックと前記第２通電ブロックとが近づくように圧力が加えられた状態で通電を維持するように構成された、請求項１～１４のいずれか１項に記載の通電構造。 The energization structure according to any one of claims 1 to 14, which is configured to maintain energization in a state where pressure is applied so that the first energization block and the second energization block approach each other.
  16. 　請求項１～１５のいずれか１項に記載の通電構造と、
    　前記通電構造に電気的に接続された電力用半導体チップとを備えた、パワー半導体モジュール。     The energization structure according to any one of claims 1 to 15,
    A power semiconductor module including a power semiconductor chip electrically connected to the current-carrying structure.
PCT/JP2019/022379 2019-06-05 2019-06-05 Electrical conduction structure and power semiconductor module WO2020245950A1 (en)

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