WO2020244095A1 - Oled显示面板及其制备方法 - Google Patents

Oled显示面板及其制备方法 Download PDF

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Publication number
WO2020244095A1
WO2020244095A1 PCT/CN2019/106506 CN2019106506W WO2020244095A1 WO 2020244095 A1 WO2020244095 A1 WO 2020244095A1 CN 2019106506 W CN2019106506 W CN 2019106506W WO 2020244095 A1 WO2020244095 A1 WO 2020244095A1
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Prior art keywords
layer
light
emitting layer
display panel
oled display
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English (en)
French (fr)
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汪博
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/613,391 priority Critical patent/US11302884B2/en
Publication of WO2020244095A1 publication Critical patent/WO2020244095A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/10—Triplet emission

Definitions

  • the invention relates to the field of display technology, in particular to an OLED display panel and a preparation method thereof.
  • OLED Organic Light-Emitting Diode (Organic Light-Emitting Diode) screen usually adopts a multilayer thin film device structure, which in turn includes a total reflection anode substrate, a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, and an electron transport layer , Electron injection layer, cathode, etc.
  • the host luminescent material of at least one of the red, green, and blue light-emitting layers is a hole-type material, so it is necessary to provide a common hole blocking layer between the light-emitting layer and the electron transport layer to prevent the light-emitting layer
  • the holes or excitons in the electron transport layer diffuse into the electron transport layer, resulting in the formation of leakage current or exciton quenching, thereby reducing luminous efficiency.
  • Working voltage and luminous efficiency are important indicators for evaluating OLED displays. Due to the low mobility of the common hole blocking layer, at the same current density, the red pixel working voltage and the green pixel working voltage of the OLED display panel are relatively close, while the blue pixel The working voltage is relatively high, so the relatively high working voltage of blue pixels causes the pixel crosstalk phenomenon in the OLED display panel at low gray levels.
  • the present invention provides an OLED display panel and a preparation method thereof, so as to solve the problem of the existing OLED display panel. Since a common hole blocking layer is provided on the light emitting layer, the mobility of the common hole blocking layer is relatively low. At high density, the operating voltage of the blue pixel is higher than that of the red pixel and the green pixel, which leads to the problem of pixel crosstalk in the OLED display panel at low gray levels.
  • the present invention also provides an OLED display panel, which includes an array substrate, an anode disposed on the array substrate, a light-emitting layer disposed on the anode, and a cathode disposed on the light-emitting layer;
  • the light-emitting layer includes The red sub-emissive layer, the green sub-emissive layer, and the blue sub-emissive layer in the pixel area; at least the pixel area corresponding to the red sub-emissive layer and the green sub-emissive layer is not provided with a hole blocking layer;
  • the OLED display panel further includes a hole injection layer, a hole transport layer, and an electron blocking layer that are sequentially arranged between the anode and the light-emitting layer, and a hole that is sequentially arranged between the light-emitting layer and the cathode. Electron transport layer and electron injection layer.
  • the pixel region corresponding to the blue sub-light-emitting layer is not provided with a hole blocking layer.
  • the pixel region corresponding to the blue sub-light-emitting layer is provided with a hole blocking layer.
  • the hole blocking layer is disposed between the blue sub-luminescent layer and the electron transport layer.
  • the material of the hole blocking layer is an electronic blue light host material.
  • the material of the hole blocking layer is an organic small molecule material with anthracene, dianthracene, naphthalene, or pyrene as the core.
  • the thickness of the hole blocking layer is 5-20 nanometers.
  • the host material of the red sub-emissive layer, the green sub-emissive layer and the blue sub-emissive layer are all selected from one of electronic materials and bipolar materials.
  • the present invention also provides an OLED display panel, which includes an array substrate, an anode disposed on the array substrate, a light-emitting layer disposed on the anode, and a cathode disposed on the light-emitting layer; the light-emitting layer includes The red sub-emissive layer, the green sub-emissive layer, and the blue sub-emissive layer of the pixel area; at least the pixel area corresponding to the red sub-emissive layer and the green sub-emissive layer is not provided with a hole blocking layer.
  • the pixel region corresponding to the blue sub-light-emitting layer is not provided with a hole blocking layer.
  • the OLED display panel further includes a hole injection layer, a hole transport layer, and an electron blocking layer sequentially disposed between the anode and the light-emitting layer, and An electron transport layer and an electron injection layer between the light-emitting layer and the cathode.
  • the pixel region corresponding to the blue sub-light-emitting layer is provided with a hole blocking layer.
  • the OLED display panel further includes a hole injection layer, a hole transport layer, and an electron blocking layer sequentially disposed between the anode and the light-emitting layer, and An electron transport layer and an electron injection layer between the light-emitting layer and the cathode, and the hole blocking layer is disposed between the blue sub-light-emitting layer and the electron transport layer.
  • the material of the hole blocking layer is an electronic blue light host material.
  • the material of the hole blocking layer is an organic small molecule material with anthracene, dianthracene, naphthalene, or pyrene as the core.
  • the thickness of the hole blocking layer is 5-20 nanometers.
  • the host material of the red sub-emissive layer, the green sub-emissive layer and the blue sub-emissive layer are all selected from one of electronic materials and bipolar materials.
  • the present invention also provides a method for manufacturing an OLED display panel, including the following steps:
  • the material of the hole blocking layer is an electronic blue light host material.
  • the thickness of the hole blocking layer is 5-20 nanometers.
  • the material of the hole blocking layer is an electronic blue light host material.
  • the material of the hole blocking layer is an organic small molecule material with anthracene, dianthracene, naphthalene, or pyrene as the core.
  • the beneficial effects of the present invention are: by removing the common hole blocking layer with lower mobility, no hole blocking layer is provided on the blue sub-light-emitting layer, or the blue sub-light-emitting layer is provided with an electronic blue light host material as a void
  • the hole blocking layer can not only reduce the working voltage of blue pixels and improve the current efficiency of blue pixels, without affecting the performance of red and green devices. On the other hand, it can also simplify the structure of OLED display panels and reduce production costs. .
  • FIG. 1 is a schematic structural diagram of an OLED display panel according to an embodiment of the present invention.
  • FIG. 2 is a comparison diagram of the relationship between pixel current density and voltage between the embodiment of the present invention and the prior art
  • FIG. 3 is a comparison diagram of pixel current efficiency and current density curves between the embodiment of the present invention and the prior art
  • FIG. 4 is a schematic structural diagram of an OLED display panel according to other embodiments of the present invention.
  • FIG. 5 is a flowchart of steps of a method for manufacturing an OLED display panel according to an embodiment of the present invention.
  • the present invention is directed to the existing OLED display panel. Since at least one of the main light-emitting materials in the red, green and blue light-emitting layers is a hole-type material, it is necessary to provide a common hole blocking layer between the light-emitting layer and the electron transport layer. Prevent the holes or excitons in the light-emitting layer from diffusing into the transport layer, and the mobility of the common hole blocking layer is low. At the same current density, compared with the working voltage of the red pixel and the green pixel, the blue pixel The high operating voltage causes the problem of pixel crosstalk in the OLED display panel at low gray levels. This embodiment can solve this defect.
  • an embodiment of the present invention provides an OLED display panel 100, which includes an array substrate 10, an anode 20 disposed on the array substrate 10, a light emitting layer 60 disposed on the anode 20, and The cathode 90 on the light-emitting layer 60.
  • the light emitting layer 60 includes a red sub light emitting layer 61, a green sub light emitting layer 62, and a blue sub light emitting layer 63 disposed in the corresponding pixel area.
  • the OLED display panel 100 further includes a hole injection layer 30, a hole transport layer 40, and an electron blocking layer 50 sequentially disposed between the anode 20 and the light emitting layer 60, and the electron blocking layers 50 correspond to The sub-light emitting layer is arranged in the corresponding pixel area.
  • the OLED display panel 100 further includes an electron transport layer 70 and an electron injection layer 80 sequentially disposed between the light emitting layer 60 and the cathode 90.
  • At least one host luminescent material in the existing red, green, and blue light-emitting layers is a hole-type material, it is necessary to provide a common hole blocking layer to prevent the diffusion of holes or excitons in the light-emitting layer In the electron transport layer, leakage current or exciton quenching is formed.
  • the common hole blocking layer due to the low mobility of the common hole blocking layer, the operating voltage of the blue pixel is greater than that of other pixels at the same current density, and the higher the blue pixel The working voltage of the color pixel causes the pixel crosstalk phenomenon in the OLED display panel in a low gray scale state.
  • the host materials in the red sub-emissive layer 61, the green sub-emissive layer 62, and the blue sub-emissive layer 63 in this embodiment all use one of electronic materials and bipolar materials. , So that the light-emitting recombination center is located far away from the electron transport layer 70 or near the center of the light-emitting layer 60, so that no common hole transport layer is required.
  • the pixel regions corresponding to the red sub-emissive layer 61, the green sub-emissive layer 62, and the blue sub-emissive layer 63 are not provided with a hole blocking layer.
  • the common hole blocking layer in this embodiment As shown in FIG. 2, compared with the common hole blocking layer provided in the prior art, after removing the common hole blocking layer in this embodiment, the green pixel voltage and the red pixel voltage are hardly affected, and at the same current density Next, the operating voltage of the blue pixel in this embodiment is significantly reduced. As shown in FIG. 3, under the same current density, the current efficiency of the green pixel and the red pixel are hardly affected, and the current efficiency of the blue pixel in this embodiment is also improved. In addition, removing the common hole blocking layer is also beneficial to simplify the structure of the OLED device and reduce the production cost of the OLED display panel.
  • a hole blocking layer 30' may also be provided in the pixel area corresponding to the blue sub-light-emitting layer 63, that is, between the blue sub-light-emitting layer 63 and the The hole blocking layer 30' is arranged between the electron transport layer 70, the hole blocking layer 30' is arranged corresponding to the blue sub-light-emitting layer 63, and the red sub-light-emitting layer 61 and the green sub-light emitting The hole blocking layer 30' is not provided in the pixel area corresponding to the layer 62.
  • the film thickness of the hole blocking layer 30' is 5-20 nanometers.
  • the material of the hole blocking layer 30' is an electronic blue light host material. Compared with the common hole blocking layer in the prior art, the mobility is higher, which can reduce the working voltage of the blue sub-pixel and increase the blue color. Current efficiency of sub-pixels.
  • the material of the hole blocking layer 30' is an organic small molecule material with anthracene, dianthracene, naphthalene, or pyrene as the core.
  • the OLED display panel 100 may further include a light-coupling layer 10' and an encapsulation layer 20' which are sequentially disposed on the cathode 90.
  • the light-coupling layer 10' is used to increase the light-emitting rate of the OLED light-emitting device.
  • the layer 20' is used to protect the OLED light-emitting device and prevent the OLED light-emitting device from being corroded by water and oxygen.
  • an embodiment of the present invention also provides a method for manufacturing an OLED display panel 100, including the following steps:
  • the light-emitting layer 60 includes a red sub-light-emitting layer 61, a green sub-light-emitting layer 62, and a blue sub-light-emitting layer 63 located in the pixel area;
  • an anode 20 is prepared on the array substrate 10.
  • the array substrate 10 includes thin film transistor devices arranged in an array.
  • the anode 20 is a composite film structure and includes a first indium tin oxide film layer, a silver metal layer, And the second indium tin oxide film layer.
  • an open mask is used to deposit a hole injection layer 30 and a hole transport layer 40 on the anode by vacuum evaporation.
  • the material of the hole transport layer 40 is 2T-NATA, NPB, TAPC At least one material, the thickness of the hole transport layer 40 is 40-150 nanometers.
  • an electron blocking layer 50 is deposited on the corresponding pixel area through a fine metal mask.
  • the material of the electron blocking layer 50 is an organic small molecule material; afterwards, each sub-layer is deposited on the electron blocking layer 50 through a fine metal mask.
  • the light-emitting layer is vapor-deposited in the corresponding pixel area.
  • the electronic blue host luminescent material can be an organic small molecule material with anthracene, dianthracene, naphthalene, pyrene, etc. as the core, and the hole blocking layer 30' has a thickness of 5-20 nanometers.
  • the electron transport layer 70 and the electron injection layer 80 are vacuum-evaporated sequentially on the light-emitting layer 60 using an open mask, wherein the material of the electron transport layer 70 is at least one of TPBi, Bphen, and TmPyPB , The thickness is 20-80 nanometers, and the material of the electron injection layer 80 can be active metals such as Yb and Mg.
  • a cathode 90 is prepared on the electron injection layer 80, and the material of the cathode 90 may be one or a combination of Yb, Ca, Mg, and Ag.
  • the preparation method of the embodiment of the present invention further includes sequentially preparing a light-coupling layer 10' and an encapsulation layer 20' on the cathode.
  • the material of the light-coupling layer 10' is a high refractive index organic small molecule material, such as a hole transport type. material.
  • the material of the encapsulation layer 20' is composed of multiple layers of alternating inorganic/organic polymers.
  • the inorganic material can be one or more of SiNx, SiOx, SiONx, SiCNx, Al2O3, and the organic material can be acrylic or epoxy. Resin and other materials.

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  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

一种OLED显示面板，包括阵列基板、阳极、发光层、以及阴极，所述发光层包括位于像素区域的红色子发光层、绿色子发光层、以及蓝色子发光层，至少与所述红色子发光层和所述绿色子发光层对应的所述像素区域均未设置空穴阻挡层。

Description

OLED显示面板及其制备方法 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED显示面板及其制备方法。
 背景技术
目前广泛应用到显示领域的OLED（Organic Light-Emitting Diode，有机发光二极管）屏幕通常采用多层薄膜器件结构，依次包括全反射阳极基板、空穴注入层、空穴传输层、电子阻挡层、发光层、空穴阻挡层、电子传输层、电子注入层、阴极等。由于现有技术中，红、绿、蓝发光层中至少有一层的主体发光材料为空穴型材料，因此需要在发光层与电子传输层之间设置一层公共空穴阻挡层，防止发光层中的空穴或激子扩散至电子传输层中，导致形成漏电流或激子猝灭，从而降低发光效率。
工作电压和发光效率是评价OLED显示器的重要指标，由于公共空穴阻挡层的迁移率较低，在同一电流密度下，OLED显示面板的红色像素工作电压和绿色像素工作电压较为接近，蓝色像素工作电压较高，因此较高的蓝色像素工作电压使得OLED显示面板在低灰阶下存在像素串扰现象。
 技术问题
本发明提供一种OLED显示面板及其制备方法，以解决现有的OLED显示面板，由于在发光层上设置有一层公共空穴阻挡层，公共空穴阻挡层的迁移率较低，在同一电流密度下，相比于红色像素和绿色像素的工作电压，蓝色像素的工作电压较高，导致OLED显示面板在低灰阶下存在像素串扰的问题。
 技术解决方案
为解决上述问题，本发明提供的技术方案如下：
本发明还提供一种OLED显示面板，包括阵列基板、设置于所述阵列基板上的阳极、设置于所述阳极上的发光层、设置于所述发光层上的阴极；所述发光层包括位于像素区域的红色子发光层、绿色子发光层、以及蓝色子发光层；至少与所述红色子发光层和所述绿色子发光层对应的所述像素区域均未设置空穴阻挡层；所述OLED显示面板还包括依次设置于所述阳极与所述发光层之间的空穴注入层、空穴传输层、和电子阻挡层，以及依次设置于所述发光层和所述阴极之间的电子传输层和电子注入层。
在本发明的一种实施例中，与所述蓝色子发光层对应的所述像素区域未设置空穴阻挡层。
在本发明的一种实施例中，与所述蓝色子发光层对应的所述像素区域设置有空穴阻挡层。
在本发明的一种实施例中，所述空穴阻挡层设置于所述蓝色子发光层与所述电子传输层之间。
在本发明的一种实施例中，所述空穴阻挡层的材料为电子型蓝光主体材料。
在本发明的一种实施例中，所述空穴阻挡层的材料为以蒽、双蒽、萘、或者芘为核的有机小分子材料。
在本发明的一种实施例中，所述空穴阻挡层的厚度为5~20纳米。
在本发明的一种实施例中，所述红色子发光层、所述绿色子发光层以及所述蓝色子发光层的主体材料均选自电子型材料和双极性材料中的一种。
本发明还提供一种OLED显示面板，包括阵列基板、设置于所述阵列基板上的阳极、设置于所述阳极上的发光层、设置于所述发光层上的阴极；所述发光层包括位于像素区域的红色子发光层、绿色子发光层、以及蓝色子发光层；至少与所述红色子发光层和所述绿色子发光层对应的所述像素区域均未设置空穴阻挡层。
在本发明的一种实施例中，与所述蓝色子发光层对应的所述像素区域未设置空穴阻挡层。
在本发明的一种实施例中，所述OLED显示面板还包括依次设置于所述阳极与所述发光层之间的空穴注入层、空穴传输层、和电子阻挡层，以及依次设置于所述发光层和所述阴极之间的电子传输层和电子注入层。
在本发明的一种实施例中，与所述蓝色子发光层对应的所述像素区域设置有空穴阻挡层。
在本发明的一种实施例中，所述OLED显示面板还包括依次设置于所述阳极与所述发光层之间的空穴注入层、空穴传输层、和电子阻挡层，以及依次设置于所述发光层和所述阴极之间的电子传输层和电子注入层，且所述空穴阻挡层设置于所述蓝色子发光层与所述电子传输层之间。
在本发明的一种实施例中，所述空穴阻挡层的材料为电子型蓝光主体材料。
在本发明的一种实施例中，所述空穴阻挡层的材料为以蒽、双蒽、萘、或者芘为核的有机小分子材料。
在本发明的一种实施例中，所述空穴阻挡层的厚度为5~20纳米。
在本发明的一种实施例中，所述红色子发光层、所述绿色子发光层以及所述蓝色子发光层的主体材料均选自电子型材料和双极性材料中的一种。
本发明还提供一种OLED显示面板的制备方法，包括以下步骤：
S10，提供一阵列基板，在所述阵列基板上制备阳极；
S20，在所述阳极上制备发光层，所述发光层包括位于像素区域的红色子发光层、绿色子发光层、以及蓝色子发光层；
S30，在与所述蓝色子发光层对应的所述像素区域的上方制备空穴阻挡层；
S40，在所述空穴阻挡层上制备阴极。
在本发明的一种实施例中，所述空穴阻挡层的材料为电子型蓝光主体材料。
在本发明的一种实施例中，所述空穴阻挡层的厚度为5~20纳米。
在本发明的一种实施例中，所述空穴阻挡层的材料为电子型蓝光主体材料。
在本发明的一种实施例中，所述空穴阻挡层的材料为以蒽、双蒽、萘、或者芘为核的有机小分子材料。
 有益效果
本发明的有益效果为：通过去除迁移率较低的公共空穴阻挡层，使得蓝色子发光层上无空穴阻挡层，或在蓝色子发光层上设置以电子型蓝光主体材料为空穴阻挡层，一方面不仅可以降低蓝色像素的工作电压，提高蓝色像素的电流效率，对红、绿器件的性能不造成影响，另一方面也能够简化OLED显示面板的结构，降低生产成本。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例的OLED显示面板的结构示意图；
图2为本发明实施例与现有技术的像素电流密度与电压关系曲线对比图；
图3为本发明实施例与现有技术的像素电流效率与电流密度曲线对比图；
图4为本发明其他实施例的OLED显示面板的结构示意图；
图5为本发明实施例的OLED显示面板的制备方法的步骤流程图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明针对现有的OLED显示面板，由于红、绿、蓝发光层中至少有一层主体发光材料为空穴型材料，需要在发光层与电子传输层之间设置一层公共空穴阻挡层来避免发光层中的空穴或激子扩散至传输层中，而公共空穴阻挡层的迁移率较低，在同一电流密度下，相比于红色像素和绿色像素的工作电压，蓝色像素的工作电压较高，导致OLED显示面板在低灰阶下存在像素串扰的问题，本实施例能够解决该缺陷。
如图1所示，本发明实施例提供一种OLED显示面板100，包括阵列基板10、设置于所述阵列基板10上的阳极20、设置于所述阳极20上的发光层60、以及设置于所述发光层60上的阴极90。
所述发光层60包括设置于相应的像素区域的红色子发光层61、绿色子发光层62、以及蓝色子发光层63。
所述OLED显示面板100还包括依次设置于所述阳极20与所述发光层60之间的空穴注入层30、空穴传输层40，以及电子阻挡层50，所述电子阻挡层50分别对应于相应的像素区域内的子发光层设置。
所述OLED显示面板100还包括依次设置于所述发光层60与所述阴极90之间的电子传输层70和电子注入层80。
由于现有的红、绿、蓝发光层中至少有一层的主体发光材料为空穴型材料，因此需要设置一层公共空穴阻挡层，以用于防止发光层中的空穴或激子扩散至电子传输层中，导致形成漏电流或激子猝灭，然而由于公共空穴阻挡层的迁移率较低，在同一电流密度下，蓝色像素工作电压大于其他像素工作电压，较高的蓝色像素工作电压使得OLED显示面板在低灰阶状态下存在像素串扰现象。
因此，本实施例中的所述红色子发光层61、所述绿色子发光层62、以及所述蓝色子发光层63中的主体材料均采用电子型材料和双极性材料中的一种，进而使得发光复合中心位于远离所述电子传输层70或所述发光层60中心附近，从而不需设置公共空穴传输层。
具体地，与所述红色子发光层61、所述绿色子发光层62、以及所述蓝色子发光层63对应的像素区域均未设置空穴阻挡层。
如图2所示，与现有技术中设置公共空穴阻挡层相比，本实施例中去除公共空穴阻挡层后，绿色像素电压和红色像素电压几乎不受到影响，并且在相同的电流密度下，本实施例中的蓝色像素的工作电压得到了明显降低。如图3所示，在相同的电流密度下，绿色像素和红色像素的电流效率几乎不受到影响，且本实施例中的蓝色像素的电流效率也得到了提高。另外，去除公共空穴阻挡层也有利于简化OLED器件的结构，降低OLED显示面板的生产成本。
如图4所示，在本实施例的基础上，还可在与所述蓝色子发光层63对应的像素区域设置空穴阻挡层30’，即在所述蓝色子发光层63与所述电子传输层70之间设置所述空穴阻挡层30’，所述空穴阻挡层30’与所述蓝色子发光层63对应设置，所述红色子发光层61和所述绿色子发光层62对应的像素区域均未设置该空穴阻挡层30’。
所述空穴阻挡层30’的膜层厚度为5~20纳米。所述空穴阻挡层30’的材料为电子型蓝光主体材料，相较于现有技术中的公共空穴阻挡层，迁移率较高，进而可降低蓝色子像素的工作电压和提高蓝色子像素的电流效率。
具体地，所述空穴阻挡层30’的材料为以蒽、双蒽、萘、或者芘为核的有机小分子材料。
所述OLED显示面板100还可包括依次设置于所述阴极90上的耦合出光层10’和封装层20’，所述耦合出光层10’用以增大OLED发光器件的出光率，所述封装层20’用以保护OLED发光器件，避免OLED发光器件受到水氧的侵蚀。
如图5所示，本发明实施例还提供一种OLED显示面板100的制备方法，包括以下步骤：
S10，提供一阵列基板10，在所述阵列基板10上制备阳极20；
S20，在所述阳极20上制备发光层60，所述发光层60包括位于像素区域的红色子发光层61、绿色子发光层62、以及蓝色子发光层63；
S30，在与所述蓝色子发光层63对应的所述像素区域的上方制备空穴阻挡层30’；
S40，在所述空穴阻挡层30’上制备阴极90。
下面详细介绍本发明实施例的制备方法。
首先，在所述阵列基板10上制备阳极20，所述阵列基板10包括阵列设置的薄膜晶体管器件，所述阳极20为复合膜层结构，依次包括第一氧化铟锡膜层、银金属层、以及第二氧化铟锡膜层。
然后，利用开放式掩模板通过真空蒸镀，在所述阳极上依次沉积空穴注入层30和空穴传输层40，所述空穴传输层40的材料为2T-NATA、NPB、TAPC中的至少一种材料，所述空穴传输层40的厚度为40~150纳米。
接着，通过精细金属掩模板在相应的像素区域沉积电子阻挡层50，所述电子阻挡层50的材料为有机小分子材料；之后，在所述电子阻挡层50上通过精细金属掩模板将各子发光层蒸镀在相应的像素区域内。
在蓝色子发光层63蒸镀完成后，利用与所述蓝色子发光层63相同的掩模板在所述蓝色子发光层63上蒸镀一层电子型蓝色主体发光材料作为空穴阻挡层30’。具体地，该电子型蓝色主体发光材料可为以蒽、双蒽、萘、芘等为核的有机小分子材料，所述空穴阻挡层30’的厚度为5~20纳米。
之后，利用开放式掩模板在所述发光层60上依次真空蒸镀电子传输层70和电子注入层80，其中，所述电子传输层70的材料为TPBi、Bphen、TmPyPB中的至少一种材料，厚度为20-80纳米，所述电子注入层80的材料可为Yb、Mg等活泼金属。
之后，在所述电子注入层80上制备阴极90，所述阴极90材料可为Yb、Ca、Mg、Ag中的一种或多种组合。
本发明实施例制备方法还包括在所述阴极上依次制备耦合出光层10’和封装层20’，所述耦合出光层10’的材料为高折射率的有机小分子材料，例如空穴传输类材料。所述封装层20’材料由多层交替的无机/有机聚合物构成，该无机材料可为SiNx、SiOx、SiONx、SiCNx、Al2O3中的一种或多种材料，有机材料可以是亚克力，环氧树脂等材料。
有益效果：通过去除迁移率较低的公共空穴阻挡层，使得蓝色子发光层上无空穴阻挡层，或在蓝色子发光层上设置以电子型蓝光主体材料为空穴阻挡层，一方面不仅可以降低蓝色像素的工作电压，提高蓝色像素的电流效率，对红、绿器件的性能不造成影响，另一方面也能够简化OLED显示面板的结构，降低生产成本。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种OLED显示面板，包括：
    阵列基板；
    阳极，设置于所述阵列基板上；
    发光层，设置于所述阳极上，所述发光层包括位于像素区域的红色子发光层、绿色子发光层、以及蓝色子发光层；
    阴极，设置于所述发光层上；其中，
    至少与所述红色子发光层和所述绿色子发光层对应的所述像素区域均未设置空穴阻挡层；
    所述OLED显示面板还包括依次设置于所述阳极与所述发光层之间的空穴注入层、空穴传输层、和电子阻挡层，以及依次设置于所述发光层和所述阴极之间的电子传输层和电子注入层。
  2. 根据权利要求1所述的OLED显示面板，其中，与所述蓝色子发光层对应的所述像素区域未设置空穴阻挡层。
  3. 根据权利要求1所述的OLED显示面板，其中，与所述蓝色子发光层对应的所述像素区域设置有空穴阻挡层。
  4. 根据权利要求3所述的OLED显示面板，其中，所述空穴阻挡层设置于所述蓝色子发光层与所述电子传输层之间。
  5. 根据权利要求3所述的OLED显示面板，其中，所述空穴阻挡层的材料为电子型蓝光主体材料。
  6. 根据权利要求5所述的OLED显示面板，其中，所述空穴阻挡层的材料为以蒽、双蒽、萘、或者芘为核的有机小分子材料。
  7. 根据权利要求5所述的OLED显示面板，其中，所述空穴阻挡层的厚度为5~20纳米。
  8. 根据权利要求1所述的OLED显示面板，其中，所述红色子发光层、所述绿色子发光层以及所述蓝色子发光层的主体材料均选自电子型材料和双极性材料中的一种。
  9. 一种OLED显示面板，包括：
    阵列基板；
    阳极，设置于所述阵列基板上；
    发光层，设置于所述阳极上，所述发光层包括位于像素区域的红色子发光层、绿色子发光层、以及蓝色子发光层；
    阴极，设置于所述发光层上；其中，
    至少与所述红色子发光层和所述绿色子发光层对应的所述像素区域均未设置空穴阻挡层。
  10. 根据权利要求9所述的OLED显示面板，其中，与所述蓝色子发光层对应的所述像素区域未设置空穴阻挡层。
  11. 根据权利要求10所述的OLED显示面板，其中，所述OLED显示面板还包括依次设置于所述阳极与所述发光层之间的空穴注入层、空穴传输层、和电子阻挡层，以及依次设置于所述发光层和所述阴极之间的电子传输层和电子注入层。
  12. 根据权利要求9所述的OLED显示面板，其中，与所述蓝色子发光层对应的所述像素区域设置有空穴阻挡层。
  13. 根据权利要求12所述的OLED显示面板，其中，所述OLED显示面板还包括依次设置于所述阳极与所述发光层之间的空穴注入层、空穴传输层、和电子阻挡层，以及依次设置于所述发光层和所述阴极之间的电子传输层和电子注入层，且所述空穴阻挡层设置于所述蓝色子发光层与所述电子传输层之间。
  14. 根据权利要求12所述的OLED显示面板，其中，所述空穴阻挡层的材料为电子型蓝光主体材料。
  15. 根据权利要求14所述的OLED显示面板，其中，所述空穴阻挡层的材料为以蒽、双蒽、萘、或者芘为核的有机小分子材料。
  16. 根据权利要求14所述的OLED显示面板，其中，所述空穴阻挡层的厚度为5~20纳米。
  17. 根据权利要求1所述的OLED显示面板，其中，所述红色子发光层、所述绿色子发光层以及所述蓝色子发光层的主体材料均选自电子型材料和双极性材料中的一种。
  18. 一种OLED显示面板的制备方法，包括以下步骤：
    S10，提供一阵列基板，在所述阵列基板上制备阳极；
    S20，在所述阳极上制备发光层，所述发光层包括位于像素区域的红色子发光层、绿色子发光层、以及蓝色子发光层；
    S30，在与所述蓝色子发光层对应的所述像素区域的上方制备空穴阻挡层；
    S40，在所述空穴阻挡层上制备阴极。
  19. 根据权利要求18所述的制备方法，其中，所述空穴阻挡层的材料为电子型蓝光主体材料。
  20. 根据权利要求19所述的制备方法，其中，所述空穴阻挡层的材料为以蒽、双蒽、萘、或者芘为核的有机小分子材料。
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