WO2020241010A1 - スパッタリング装置、薄膜製造方法 - Google Patents

スパッタリング装置、薄膜製造方法 Download PDF

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Publication number
WO2020241010A1
WO2020241010A1 PCT/JP2020/012902 JP2020012902W WO2020241010A1 WO 2020241010 A1 WO2020241010 A1 WO 2020241010A1 JP 2020012902 W JP2020012902 W JP 2020012902W WO 2020241010 A1 WO2020241010 A1 WO 2020241010A1
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Prior art keywords
magnet
variable
sputtering
magnetic field
cathode electrode
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PCT/JP2020/012902
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English (en)
French (fr)
Japanese (ja)
Inventor
弘敏 阪上
哲宏 大野
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株式会社アルバック
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Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Priority to JP2020537555A priority Critical patent/JP6895589B2/ja
Priority to KR1020207024072A priority patent/KR102443757B1/ko
Priority to CN202080006532.XA priority patent/CN113056573B/zh
Publication of WO2020241010A1 publication Critical patent/WO2020241010A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • the present invention relates to a sputtering apparatus and a thin film manufacturing method.
  • the magnetron sputtering method is a device that forms a magnetic field on the surface of a sputtering target, moves electrons in the magnetic field, and efficiently turns the sputtering gas into plasma, and is widely used for forming a thin film.
  • Reference numerals 130 in FIGS. 8A and 8B are target devices used in the magnetron sputtering device, in which the sputtering target 114 is arranged on one side of the cathode electrode 121, and a plurality of magnet devices 131 are arranged on the opposite side. Has been done.
  • Each magnet device 131 has an annular outer magnet 136 and a linear inner magnet 134 arranged in a region surrounded by the outer magnet 136, and has two magnetic poles of the outer magnet 136 of each magnet device 131.
  • the magnetic poles of the same polarity are directed to the cathode electrode 121, and of the two magnetic poles of the inner magnet 134, the magnetic pole having the opposite polarity to the magnetic pole of the outer magnet 136 directed to the cathode electrode 121 is directed to the cathode electrode 121.
  • a sputtering voltage is applied to the cathode electrode 121, and the electrons emitted from the surface of the sputtering target 114 are captured by the magnetic field formed on the surface of the sputtering target 114 by the outer magnet 136 and the inner magnet 134, and the sputtering target 114
  • a high-density plasma of sputtering gas is formed on the surface, and the surface of the sputtering target 114 is sputtered.
  • the place where the plasma is formed at high density is the upper region between the outer magnet 136 and the inner magnet 134, and a moving plate provided with each magnet device 131 in order to widely sputter the surface of the sputtering target 114.
  • the 145 is moved in a direction perpendicular to the longitudinal direction of the magnet device 131 so that the high density plasma moves on the surface of the sputtering target 114.
  • the magnetic field strength tends to be strong above the positions at both ends of the magnet device 131, the plasma formed at that location becomes particularly dense, and the sputtering target 114 is sputtered in large quantities.
  • the sputtering target 114 is sputtered in a larger amount.
  • the present invention was created to solve the above-mentioned problems of the prior art, and reduces the magnetic field strength of a variable magnet in which a permanent magnet and an electromagnet are combined so that the magnetic field strength on the sputtered surface does not change. , To enable uniform sputtering on the sputtered surface.
  • the present invention made to achieve the above object is the above-mentioned of the cathode electrode, the sputtering target arranged on one surface of the cathode electrode and the sputtering surface exposed in the vacuum chamber is sputtering, and the surface of the cathode electrode. It has a target device that is arranged on the surface opposite to one side and is provided with a magnet device that forms a magnetic field on the sputter surface, and is located in the vacuum chamber when the sputtering target is sputtered.
  • a sputtering device in which a thin film is formed on the film-forming surface of a film object.
  • the magnet device is elongated and has a longitudinal direction, and variable magnetic field portions are arranged at both ends of the longitudinal direction.
  • a fixed magnetic force portion is arranged between the variable magnetic force portions, and the fixed magnetic force portion includes the first and second central outer portions composed of elongated permanent magnets arranged along the longitudinal direction, and the first and second central outer portions.
  • the variable magnetic field portion has a central inner portion composed of an elongated permanent magnet arranged along the longitudinal direction between the second central outer portions, and the variable magnetic field portion is an elongated portion arranged along the longitudinal direction.
  • the outer side of the first and second ends made of permanent magnets, the inner side of the end made of a plurality of variable magnets arranged along the longitudinal direction between the outer outer parts of the first and second ends, and the above.
  • connection portion made of an elongated and curved permanent magnet located at both ends of the magnet device in the longitudinal direction and connecting the ends of the outer portions of the first and second ends, and has an N pole and an S pole. If the magnetic pole of one of the polarities is the first pole and the magnetic pole of the other polarity is the second pole, the first and second central outer portions and the first and second end outer portions In the connection portion, the magnetic pole of the first pole is directed to the cathode electrode, and in the central inner portion and the inner end portion, the magnetic pole of the second pole is directed to the cathode electrode, and the variable magnet.
  • the magnetic core portion of at least one of the variable magnets has a basic magnetic field portion made of a permanent magnet, and the strength of the magnetic field formed by the variable magnet is the magnetic field of the basic magnetic field portion.
  • This is a sputtering device in which the strength of the combined magnetic field is obtained by combining the magnetic field of the electromagnet portion.
  • the present invention is a sputtering apparatus in which the magnetic pole of the first pole of the basic magnetic force portion is directed to the cathode electrode.
  • the present invention is a sputtering device in which the magnetic pole of the second pole of the basic magnetic force portion is directed to the cathode electrode.
  • the present invention is a sputtering apparatus in which the strength of the magnetic field formed by the variable magnet can be changed while the sputtering target is sputtered.
  • the present invention is a sputtering device configured so that the sputtering target and the magnet device relatively reciprocate.
  • the target device is a sputtering device having one cathode electrode, the sputtering target arranged on one cathode electrode, and a plurality of the magnet devices arranged in parallel with each other. is there.
  • the present invention is a sputtering apparatus having a plurality of the magnet devices, wherein the plurality of magnet devices are arranged in parallel with each other and arranged in a row, and among the arranged magnet devices, the said magnet devices located at both ends.
  • the number of the variable magnets of the magnet device is larger than the number of the variable magnets of the magnet device located elsewhere.
  • the present invention is a sputtering apparatus having a plurality of the target apparatus.
  • the present invention is a sputtering apparatus, wherein the target apparatus is surrounded by the cathode electrode having a cylindrical shape, the sputtering target having a cylindrical shape arranged on the outer periphery of the cathode electrode, and the cathode electrode. It is a sputtering apparatus having the said magnet apparatus arranged in the region.
  • the present invention is a sputtering device in which the variable magnet is arranged in a case, a cooling medium is passed through a refrigerant passage provided in the case, and the variable magnet is cooled.
  • the present invention is a thin film manufacturing method in which a sputtering device is controlled to form a thin film on an object to be deposited.
  • the sputtering device is arranged on one side of a cathode electrode and the cathode electrode, and is exposed in a vacuum chamber. It has a target device provided with a sputtering target on which the sputtered surface is sputtered and a magnet device arranged on the surface of the cathode electrode opposite to the one side and forming a magnetic field on the sputtered surface.
  • a sputtering device in which a thin film is formed on the film-forming surface of the film-forming object located in the vacuum chamber when the sputtering target is sputtered, and the magnet device is elongated and has a longitudinal direction.
  • a variable magnetic field portion is arranged at both ends in the longitudinal direction, a fixed magnetic force portion is arranged between the variable magnetic force portions, and the fixed magnetic force portion is an elongated permanent arrangement arranged along the longitudinal direction. It has a first and second central outer portion composed of magnets and a central inner portion composed of an elongated permanent magnet arranged along the longitudinal direction between the first and second central outer portions.
  • the variable magnetic field portion is formed in the longitudinal direction between the first and second end outer portions made of elongated permanent magnets arranged along the longitudinal direction and the first and second end outer portions.
  • An elongated and curved portion located at both ends of the magnet device in the longitudinal direction and connecting the end portions of the first and second end outer portions, and an end inner portion composed of a plurality of variable magnets arranged along the line. If the magnetic pole of one of the north pole and the south pole is the first pole and the magnetic pole of the other polarity is the second pole, the first pole has a connecting portion made of a permanent magnet. The second central outer portion, the first and second end outer portions, and the connection portion have the magnetic pole of the first pole directed toward the cathode electrode, and the center inner portion and the end inner portion.
  • the second pole has a magnetic pole directed toward the cathode electrode, and the variable magnet has a magnetic core portion and a coil wound around the magnetic core portion, and an electromagnet portion that forms a magnetic field when an exciting current flows.
  • the direction and strength of the magnetic field formed by the variable magnet can be changed according to the direction and magnitude of the exciting current, and when the number of the film-forming objects on which the thin film is formed increases, This is a thin film manufacturing method for reducing the strength of the magnetic field formed by the variable magnet.
  • the present invention is a thin film manufacturing method in which a sputtering device is controlled to form a thin film on an object to be deposited.
  • the sputtering device is arranged on one side of a cathode electrode and the cathode electrode, and is exposed in a vacuum chamber. It has a target device provided with a sputtering target on which the sputtered surface is sputtered and a magnet device arranged on the surface of the cathode electrode opposite to the one side and forming a magnetic field on the sputtered surface.
  • a sputtering device in which a thin film is formed on the film-forming surface of the film-forming object located in the vacuum chamber when the sputtering target is sputtered, and the magnet device is elongated and has a longitudinal direction.
  • a variable magnetic field portion is arranged at both ends in the longitudinal direction, a fixed magnetic force portion is arranged between the variable magnetic force portions, and the fixed magnetic force portion is an elongated permanent arrangement arranged along the longitudinal direction. It has a first and second central outer portion composed of magnets and a central inner portion composed of an elongated permanent magnet arranged along the longitudinal direction between the first and second central outer portions.
  • the variable magnetic field portion is formed in the longitudinal direction between the first and second end outer portions made of elongated permanent magnets arranged along the longitudinal direction and the first and second end outer portions.
  • An elongated and curved portion located at both ends of the magnet device in the longitudinal direction and connecting the end portions of the first and second end outer portions, and an end inner portion composed of a plurality of variable magnets arranged along the line. If the magnetic pole of one of the north pole and the south pole is the first pole and the magnetic pole of the other polarity is the second pole, the first pole has a connecting portion made of a permanent magnet. The second central outer portion, the first and second end outer portions, and the connection portion have the magnetic pole of the first pole directed toward the cathode electrode, and the center inner portion and the end inner portion.
  • the second pole has a magnetic pole directed toward the cathode electrode, and the variable magnet has a magnetic core portion and a coil wound around the magnetic core portion, and an electromagnet portion that forms a magnetic field when an exciting current flows.
  • the direction and strength of the magnetic field formed by the variable magnet can be changed according to the direction and magnitude of the exciting current, and when the number of the film-forming objects on which the thin film is formed increases, This is a thin film manufacturing method for increasing the strength of the magnetic field formed by the variable magnet.
  • the cathode electrode is arranged on one side of the cathode electrode, and the sputtering target on which the sputtering surface exposed in the vacuum chamber is sputtered is arranged on the surface of the cathode electrode opposite to the one side.
  • a target device provided with a plurality of elongated magnet devices that form a magnetic field on the sputtered surface is used to sputter the sputtering target to form a film-forming surface of a film-forming object located in the vacuum chamber.
  • a thin film manufacturing method for forming a thin film wherein a permanent magnet and an electromagnet are provided at both ends of each of the magnet devices, and a magnetic field formed by the permanent magnet and an exciting current flow to form a magnetic field formed by the electromagnet.
  • the difference in the amount of sputtering depending on the location of the sputtering target or the individual target in the film formation surface becomes small.
  • variable magnet has an electromagnet part and a basic magnetic force part, sputtering can be continued even when the exciting current stops flowing in the electromagnet part.
  • Drawing for explaining the sputtering apparatus of this invention (A), (b): Drawings for explaining the variable magnet of the present invention.
  • A)-(c) Drawing for explaining the target apparatus of an example of this invention.
  • A)-(c) Drawing for explaining the target apparatus of another example of this invention.
  • reference numeral 2 in FIG. 1 indicates the sputtering apparatus of the present invention.
  • This sputtering device 2 has a vacuum tank 25 and a target device 5.
  • the target device 5 is arranged on a plate-shaped cathode electrode 21, a single sputtering target 14 arranged on one side of the cathode electrode 21, and a surface of the cathode electrode 21 opposite to the sputtering target 14. has one or a plurality of magnets 30 1, 31 1 to 31 4, 30 2 (FIG. 3 (a) ⁇ (c) ).
  • the film forming object 13 is arranged inside the vacuum chamber 25, and the sputtered surface 24 of the sputtering target 14 to be sputtered and the film forming surface 22 on which the thin film of the film forming object 13 is formed face each other. ..
  • the film-forming object 13 is arranged on the mounting table 23 and is stationary with respect to the sputtering target 14, either one or both of the film-forming object 13 and the sputtering target 14 are in the vacuum chamber 25. It may be moved internally.
  • a gas source 26 and a vacuum exhaust device 29 are connected to the vacuum tank 25, and after operating the vacuum exhaust device 29 and evacuating the inside of the vacuum tank 25 to form a vacuum atmosphere inside the vacuum tank 25. , The sputtering gas is introduced from the gas source 26 into the vacuum chamber 25.
  • the cathode electrode 21 is connected to a sputtering power supply 28 so that a sputtering voltage is applied from the sputtering power supply 28.
  • the sputtering target 14 is arranged in close contact with the cathode electrode 21.
  • Other cathode electrodes 16 1 to 16 6 described later are also connected to the sputtering power supply 28 so that a sputtering voltage is applied.
  • FIG. 3A As shown in FIG. 3A, one or a plurality of magnet devices 30 1 , 31 1 to the opposite side of both surfaces of one cathode electrode 21 to the surface on which the sputtering target 14 is arranged. 31 4 and 30 2 are arranged.
  • 3 (b) is a A 1 -A 1 line cutting off cross-sectional view of FIG. (A)
  • FIG. 3 (c) is a B 1 -B 1 line cutting off cross-sectional view of FIG. (A).
  • the sputtering targets 14 shown in FIGS. 3 (a) to 3 (c) have a rectangular or square shape with a right-angled quadrilateral shape.
  • the target device 60 of FIGS. 6A and 6B which will be described later, has a cylindrical cathode electrode 61 and a cylindrical sputtering target 64 arranged on the outer peripheral surface of the cylindrical cathode electrode 61.
  • the cylindrical cathode electrode 61 is located in the region on the inner peripheral side of the cylindrical sputtering target 64, and is on the inner peripheral side of the cylindrical cathode electrode 61 and has a cylindrical shape.
  • the magnet device 32 shown in FIGS. 5 (b) and 5 (c) is arranged in a region surrounded by the cathode electrode 61 having a shape.
  • the magnet device 30 1, 31 1 to 31 4, 30 2 arranged on the sputtering target 14 at right angles quadrilateral shape described above, the magnet assembly 32 disposed on the cathode electrode 61 of cylindrical shape, has a longitudinal each elongated and, when the longitudinal direction of each magnet device 30 1, 31 1 to 31 4, 30 2, 32 referred to as the main direction, each magnet device 30 1, 31 1 to 31 4, 30 2 and 32 are arranged so that the main direction is parallel to the two sides of the flat plate-shaped sputtering target 14 or the central axis of the cylindrical shape sputtering target 64.
  • each magnet device 30 1, 31 1 to 31 4, 30 2 are arranged parallel to one another.
  • the length of the side parallel to the main direction is longer than the length of the side perpendicular to it.
  • the yokes 39 and 40 are made of a high magnetic permeability material. If having a plurality of magnets 30 1, 31 1 to 31 4, 30 2, each yoke 39 may be arranged on the same plane, also be located on different planes.
  • Each magnet unit 30 1, 31 1 to 31 4, 30 2, 32 has the variable magnetic force portion 53a having a longitudinal, respectively, 53b, 54a, and 54b, the fixed magnetic force units 51 and 52.
  • variable magnetic force portion 53a, 53b, 54a, 54b has a longitudinally elongated, the ends of each magnet device 30 1, 31 1 to 31 4, 30 2, 32, the longitudinal direction along the main direction Have been placed.
  • the fixed magnetic force portions 51 and 52 are arranged in the longitudinal direction along the main direction between the two variable magnetic force portions 53a, 53b, 54a and 54b at both ends.
  • the variable magnetic force portions 53a, 53b, 54a, 54b and the fixed magnetic force portions 51, 52 are arranged in a straight line.
  • the fixed magnetic force portions 51 and 52 have first central outer portions 35a and 36a, second central outer portions 35b and 36b, and central inner portions 33 and 34, respectively, which are made of elongated permanent magnets.
  • the first central outer portions 35a and 36a and the second central outer portions 35b and 36b are arranged along the main direction in the longitudinal direction thereof, and the first central outer portions 35a and 36a and the second center are arranged. Both ends of the outer portions 35b and 36b are aligned so that one does not protrude more than the other.
  • the central inner side portions 33 and 34 are arranged in the longitudinal direction along the main direction between the first central outer portions 35a and 36a and the second central outer portions 35b and 36b.
  • variable magnetic force portions 53a, 53b, 54a, 54b have a first end outer side portion 37a, 38a and a second end outer side part 37b, 38b made of an elongated permanent magnet, respectively, and have an elongated curved shape or a fold linear shape. It has connecting portions 37c and 38c made of permanent magnets, and end inner portions 43 and 44 made of a plurality of variable magnets 47 arranged in a straight line.
  • the first end outer portions 37a and 38a and the second end outer portions 37b and 38b are arranged along the main direction in the longitudinal direction thereof, and one end portion is aligned with the fixed magnetic force portions 51 and 52.
  • the ends of the connecting portions 37c and 38c are connected to the other end portions, respectively. Therefore, the first end outer portions 37a and 38a and the second end outer portions 37b and 38b are connected by the connecting portions 37c and 38c to form the U-shaped permanent magnet members 37 and 38.
  • the end inner side portions 43 and 44 are arranged in the longitudinal direction along the main direction between the first end outer side portions 37a and 38a and the second end outer side portions 37b and 38b.
  • variable magnet 47 has a basic magnetic force portion 71 made of a permanent magnet and an electromagnet portion 73 made of a coil in which an insulating coating wiring is spirally wound. There is.
  • An exciting power supply 18 is arranged outside the vacuum chamber 25, and the electromagnet portion 73 is connected to the exciting power supply 18 by wiring 75, and an exciting current output from the exciting power supply 18 flows to each other at both ends of the electromagnet portion 73. A magnetic pole of opposite polarity is generated.
  • the basic magnetic force portion 71 is inserted into the electromagnet portion 73, and the electromagnet portion 73 is arranged so as to wind around the basic magnetic force portion 71.
  • the straight line connecting the centers of the magnetic poles of the polarity and the straight line connecting the centers of the magnetic poles of opposite polarities generated by the electromagnet unit 73 are arranged so as to coincide with each other.
  • Reference numeral 70 is a straight line connecting the centers of magnetic poles having opposite polarities.
  • the polarity of the magnetic pole of the electromagnet unit 73 changes depending on the direction of the exciting current flowing through the electromagnet unit 73.
  • the respective magnets 30 1, 31 1 to 31 4, 30 2, 32 permanent magnets and electromagnets are disposed between the yoke 39 and 40 and the cathode electrode 21 and 61.
  • the variable magnet 47 is fixed on the yokes 39 and 40, and when the surface of the variable magnet 47 fixed to the yokes 39 and 40 is the bottom surface and the surface opposite to the bottom surface is the upper end surface, the basic magnetic force portion 71 Of the two polarities of the north pole and the south pole, the magnetic pole of one polarity is located on the bottom surface side, and the magnetic pole of the other polarity is located on the upper end surface side.
  • the magnetic poles generated by the electromagnet portion 73 one polar pole is formed on the yokes 39 and 40 sides, and the other polar pole is formed on the cathode electrodes 21 and 61 sides.
  • the cathode electrodes 21 and 61 are located on the opposite side of the yokes 39 and 40.
  • the direction and strength of the magnetic field obtained by combining the magnetic field formed by the basic magnetic force portion 71 and the magnetic field generated by the electromagnet portion 73 becomes the direction and strength of the magnetic field formed by the variable magnet 47.
  • the exciting power supply 18 is connected to the control device 12, and the direction and magnitude of the exciting current supplied by the exciting power supply 18 to the electromagnet unit 73 are controlled by the control device 12.
  • the exciting current has two directions, but the magnetic field strength formed by the electromagnet unit 73 does not become stronger than the magnetic field strength formed by the basic magnetic field unit 71 regardless of the direction of the exciting current. It is supposed to flow.
  • An exciting current in one direction flows through the electromagnet unit 73, and among the magnetic poles generated in the electromagnet unit 73, the polarities of the magnetic poles directed to the yokes 39 and 40 are directed to the yokes 39 and 40 of the basic magnetic force unit 71.
  • the polarity of the magnetic pole matches, the polarity of the magnetic pole directed to the cathode electrodes 21 and 61 opposite to the positions of the yokes 39 and 40 among the magnetic poles generated in the electromagnet portion 73 is the yoke of the basic magnetic force portion 71. It matches the polarity of the magnetic poles directed at the cathode electrodes 21 and 61 on the opposite side of the positions 39 and 40.
  • the magnetic field strength formed by the basic magnetic force portion 71 and the magnetic field strength formed by the electromagnet portion 73 are added, and the magnetic field strength of the variable magnet 47 becomes larger than the magnetic field strength of the basic magnetic force portion 71.
  • an exciting current flows in the electromagnet portion 73 in the opposite direction, and among the magnetic poles generated in the electromagnet portion 73, the polarity of the magnetic poles directed to the yokes 39 and 40 is the polarity of the magnetic poles of the basic magnetic force portion 71.
  • the polarity of the magnetic pole generated in the electromagnet unit 73 toward the side opposite to the positions of the yokes 39 and 40 is also the basic magnetic force portion.
  • the polarity of the magnetic poles directed to the side opposite to the positions of the yokes 39 and 40 of 71 is opposite to the polarity.
  • the magnetic field strength formed by the electromagnet unit 73 is subtracted from the magnetic field strength formed by the basic magnetic force portion 71, and the magnetic field strength of the variable magnet 47 is smaller than the magnetic field strength of the basic magnetic force portion 71.
  • the magnetic core of the variable magnet 47 a material having a high magnetic permeability can be used instead of the permanent magnet.
  • a permanent magnet is used for the basic magnetic force portion 71, either magnetic pole of the permanent magnet may be directed toward the target. Further, by controlling the direction and the current value of the exciting current, the magnetic field strength of the basic magnetic force portion 71 can be strengthened or weakened.
  • a magnetic core 72 formed of a material having a high magnetic permeability and which does not easily become a permanent magnet is inserted into the electromagnet portion 73, and the magnetic core 72 is wound by the wiring of the electromagnet portion 73.
  • the variable magnet 47 is formed by arranging the basic magnetic force portion 71 outside the 73.
  • the straight line 70 connecting the centers of the magnetic poles formed by the electromagnet portion 73 passes through the centers of the two magnetic poles of the basic magnetic force portion 71 with the electromagnet portion 73.
  • the basic magnetic force portion 71 is arranged.
  • variable magnetic cores 47 may be permanent magnets, and other magnetic cores may be made of a material having high magnetic permeability.
  • the variable magnetic force portions 53a, 53b, 54a, 54b may have at least one variable magnet 47, and may be a combination of the variable magnet 47 and a permanent magnet. Further, the case is not limited to the case where the outermost end is the variable magnet 47.
  • the magnetic pole of the first pole having the same polarity is directed to the yokes 39 and 40
  • the magnetic pole of the second pole having the opposite polarity to the first pole is directed to the cathode electrodes 21 and 61. ing.
  • variable magnets 47 of the end inner portions 43 and 44, the permanent magnets in the center inner portions 33 and 34, and the end inner portions 43 and 44 are the first central outer portions 35a and 36a and the second central outer portion.
  • Magnetic poles having polarities opposite to those of the portions 35b and 36b, the first end outer portions 37a and 38a, the second end outer portions 37b and 38b, and the connection portions 37c and 38c are formed on the yokes 39 and 40 and the cathode electrode 21, respectively. It is designed to be directed.
  • the magnetic poles of the first pole and the magnetic poles of the second pole are directed to the cathode electrodes 21 and 61, and arch-shaped magnetic field lines are formed on the sputtering surfaces 24 and 66 of the sputtering targets 14 and 64, and electrons are generated. It is designed to be captured.
  • a sputtering gas is introduced into the inside of the vacuum chamber 25 from the gas source 26, and a voltage is applied to the cathode electrodes 21 and 61. Electrons are emitted from the sputtered surfaces 24 and 66.
  • Magnet device 30 1, 31 1 to 31 4, 30 2, 32 of the sputtering gas is trapped electrons by the magnetic field to be formed on sputter surface 24,66 in the vicinity of the sputter surface 24,66 plasma is formed with high efficiency To.
  • the first central outer portions 35a, 36a, the second central outer portions 35b, 36b, the first end outer portions 37a, 38a, the second end outer portions 37b, 38b, and the connecting portions 37c, 38c Arranged in an annular shape, connecting the first central outer portions 35a, 36a, the second central outer portions 35b, 36b, the first end outer portions 37a, 38a, and the second end outer portions 37b, 38b.
  • An annular magnet portion is formed by the portions 37c and 38c, and the central inner portions 33 and 34 and the end inner portions 43 and 44 are arranged on the same straight line to form a linear magnet portion. Then, the linear magnet portion is arranged inside the annular magnet portion.
  • the plasma on the sputtered surfaces 24 and 66 has a high intensity in the annular region between the annular magnet portion and the linear magnet portion, and the portion sputtered in large quantities on the sputtered surface 24 is each magnet.
  • 30 1, 31 1 to 31 4, 30 2, 32 plasma intensity for each is larger annular region. This area is called the erotic area.
  • the flat plate-shaped sputtering target 14 is likely to be sputtered in a large amount in the region near the outer circumference, and the cylindrical sputtering target 64 is likely to be sputtered in a large amount in both ends in the longitudinal direction.
  • the distance is only sputtered small amount region and the magnet device 30 1 between the large amount of area to be sputtered and the magnet device 30 1, 31 1 to 31 4, 30 2, 32, 31 1 shorter than the distance between the ⁇ 31 4, 30 2, 32, since the magnetic field strength of the sputtering surface on 24 of the region large amount sputtering becomes stronger, it will be more heavily sputtered.
  • variable magnet 47 is arranged near the outer periphery of the sputtering target 14 at a position where the magnetic poles face, and in the cylindrical sputtering target 64, the variable magnet 47 has both ends of the sputtering target 64. It is located near the magnetic poles. Therefore, the erosion region becomes deeper near the outer periphery or both ends than near the center of the sputtering targets 14 and 64.
  • the number of film-forming objects 13 on which the thin film is formed is counted by the control device 12, and when the number of film-forming objects 13 on which the thin film is formed increases, the control device 12 determines the direction and magnitude of the exciting current.
  • the magnetic field strength formed by the variable magnet 47 is controlled to be small, and even if the depth of the erosion region is deeper than the center, the magnetic field strength formed by the variable magnet 47 on the sputtering surface 24 is constant. Therefore, the amount of sputtering near the outer periphery is prevented from increasing.
  • the magnetic field strength formed by the variable magnet 47 is strengthened by making the magnetic poles of the electromagnet portion 73 and the magnetic poles of the basic magnetic force portion 71 having the same polarity and having the same polarity.
  • the exciting current is reduced as the number of film-forming objects 13 forming the thin film in the sputtering apparatus 2 increases, and the magnetic field strength formed by the variable magnet 47 is reduced as the number of sheets increases.
  • the direction in which the exciting current flows is reversed, and the magnetic poles directed toward the cathode electrode 21 of the electromagnet unit 73 and the basic magnetic field 71 are reversed in polarity to form the basic magnetic field 71.
  • the magnetic field strength to be generated is weakened by the magnetic field strength formed by the electromagnet unit 73 as the number of sheets increases and the magnetic field strength formed by the variable magnet 47 decreases as the number of sheets increases, a large amount of sputtered portion is produced. since the magnetic field strength decreases as approaching the magnet apparatus 30 1, 31 1 to 31 4, 30 2, 32, sputtering amounts among the region close to the outer periphery of the sputtering surface 24 and its inner region becomes uniform ..
  • the magnetic field strength formed by the basic magnetic force portion 71 does not need to be formed by the electromagnet portion 73, so that the exciting current can be small and the heat generation of the variable magnet 47 is reduced. As a result, current consumption is reduced and heat generation is reduced. Further, even if an accident occurs in which the exciting current does not flow, the magnetic field formed by the basic magnetic field portion 71 does not disappear, so that sputtering can be continued, and the reliability of the apparatus is improved.
  • the magnetic field of the electromagnet unit 73 is formed in a direction that reduces the magnetic field of the basic magnetic force unit 71, the exciting current is increased without changing the direction, and the electromagnet unit 73 increases in number of thin film formations.
  • the magnetic field strength of the variable magnet 47 may be reduced.
  • the present invention is not limited to the case where the magnetic field strength of all the variable magnets 47 is reduced, and the magnetic field is contained in the plurality of variable magnets 47 when considering the distribution of the erotic region in the sputtered surface. It is also included in the present invention that both the variable magnet 47 that reduces the strength and the variable magnet 47 that increases the magnetic field strength are provided.
  • Each magnet unit 30 1, 31 1 to 31 4, 30 2, 32 are parallel to be arranged in a line with one another.
  • Each magnet unit 30 1 is disposed on a plane, 31 1 to 31 4, 30 2 at both ends, are aligned so that each aligned in a straight line.
  • the magnet devices 32 arranged in the cylindrical cathode electrode 61 are arranged along a circle concentric with the circle in the cross section of the cathode electrode 61 and having a radius smaller than the circle.
  • both ends of the magnet devices 30 1 , 31 1 to 31 4 and 30 2 arranged in a row are arranged.
  • the number of variable magnets 47 of the variable magnetic force portions 53a and 53b of the two magnet devices 30 1 and 30 2 located in the above is variable of the variable magnetic force portions 54a and 54b of the magnet devices 31 1 to 31 4 located at other locations.
  • the number of magnets 47 is larger than the number of magnets 47, and the amount of sputtering in the region of the sputtering surface 24 near the side parallel to the main direction is adjusted.
  • a plurality of magnets 30 1, 31 1 to 31 4, 30 2 are fixed to the moving plate 45.
  • a driving device 19 such as a motor is disposed, when the moving plate 45 is moved by the drive unit 19, each magnet device 30 1, 31 1 to 31 4, 30 2 to each other with It is designed to move to.
  • the vertical lengths of the sputtering targets 14 arranged as shown in FIGS. 3A to 3C are the magnet devices 30 1 , 31 1 to 31. 4, 30 2 are to be longer than the vertical length of the region arranged, the moving plate 45 by the driving device 19 is reciprocated in a direction along the vertical direction, the sputtering surface plasma is strong region It is designed to be moved on 24.
  • the sputtering target 14 of FIG. 3A was a single plate made of a film-forming material, and the cathode electrode 21 was a single electrode plate.
  • FIG. (a) another example of the sputtering apparatus 2 of the present invention is shown in FIG. (a), in which a plurality of target devices 10 1, 11 1 to 11 4, 10 2.
  • Each target device 10 1, 11 1 to 11 4, 10 2 has separate elongate cathode electrodes 16 1 to 16 6, respectively, to the one surface of the cathode electrodes 16 1 to 16 6, a sputtering target 15 1 ⁇ 15 6 are arranged respectively, on the surface opposite magnet apparatus 30 described above 1, 31 1 to 31 4, 30 2 are disposed respectively.
  • the plurality of cathode electrodes 16 1 to 16 6 are arranged on the same plane so as to be parallel to each other.
  • FIGS. 3 (a) and FIG. 4 (a) has a moving plate 45 and the cathode electrodes 21,16 1-16 6 and the yoke 39 are omitted.
  • Figure 5 reference numeral 60 (a) is a target device of another structure, the A 3 -A 3-wire cutting off sectional view shown in FIG. 6 (a), B 3 -B 3-wire cutting off cross-sectional view to FIG. ( Shown in b).
  • the target device 60 has a cylindrical cathode electrode 61 and a cylindrical sputtering target 64 arranged on the outer peripheral surface of the cathode electrode 61, and has an inner circumference of the sputtering target 64.
  • the cathode electrode 61 is located in the region on the side.
  • FIG. 5B The magnet device 32 shown in FIG. 5B is arranged in a region on the inner peripheral side of the cylindrical cathode electrode 61 and surrounded by the cathode electrode 61.
  • FIG. 3C is a sectional view taken along line CC of FIG. 3B.
  • This magnet device 32 has a yoke 40, and the fixed magnetic force portion 52 and the variable magnetic force portions 54a and 54b described above are arranged on the yoke 40.
  • the fixed magnetic force portion 52 and the variable magnetic force portions 54a and 54b are configured as described above, except that the magnetic pole in the magnet device 32 is an inclined surface on the yoke 40 so as to face the inner peripheral surface of the cathode electrode 61. Alternatively, a connection surface is provided.
  • the yoke 40 is provided on the pedestal 58, and the pedestal 58 is attached to the support shaft 56 attached to the rotating shaft 57.
  • the central axis of the cylindrical cathode electrode 61 coincides with the central axis of the cylindrical sputtering target 64, and reference numeral 74 in FIG. 5A indicates the central axis, and the central axis 74 extends.
  • the direction is the main direction.
  • the rotation axis of the rotation axis 57 coincides with the center axis 74 of the cathode electrode 61 and the center axis 74 of the sputtering target 64, and when the rotation axis 57 is rotated by the driving device, the magnet device 32 is centered on the center axis 74. And rotate.
  • the distance between the magnetic pole in the magnet device 32 and the cathode electrode 61 does not change, and when the magnetic field strength is constant, the amount of sputtering on the variable magnetic force portions 54a and 54b increases.
  • the magnetic field strength formed by the variable magnet 47 is controlled to reduce the magnetic field strength formed by the variable magnetic force portions 54a and 54b according to the number of processed objects to be processed, so that the sputtered surface 66 of the sputtering target 64 is formed.
  • the non-uniformity of the distance between the magnet device 32 and the magnet device 32 is compensated for by changing the magnetic field strength so that the surface of the sputtering target 64 is uniformly sputtered.
  • the variable magnet 47 is arranged inside the case 67 provided with the refrigerant passages 69a and 69b shown in FIG. 7, and serves as a unit 68.
  • the cooling medium is supplied from the supply pipes 63a and 63b to the refrigerant passages 69a and 69b.
  • the cooling medium is supplied and flows into the refrigerant passages 69a and 69b, the cooling medium that has absorbed heat is discharged from the discharge pipes 65a and 65b to the outside of the case 67, and is cooled by the cooling device 20 arranged outside the vacuum chamber 25.
  • the exciting current can be increased by returning the cooling medium from the supply pipes 63a and 63b to the refrigerant passages 69a and 69b of the case 67 so as to circulate the cooling medium.
  • variable magnets 47 may be arranged in different cases 67, but if a plurality of variable magnets 47 are arranged inside the same case 67, the supply pipes 63a and 63b and the discharge pipes 65a and 65b can be reduced. it can.

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PCT/JP2020/012902 2019-05-28 2020-03-24 スパッタリング装置、薄膜製造方法 WO2020241010A1 (ja)

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CN114855136A (zh) * 2022-05-09 2022-08-05 哈尔滨工业大学 利用可变磁控靶磁场调控薄膜结构和成分的镀膜系统及镀膜方法

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KR20200138176A (ko) 2020-12-09
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