WO2020238296A1 - 突起结构内侧设置空隙结构的谐振器及电子设备 - Google Patents

突起结构内侧设置空隙结构的谐振器及电子设备 Download PDF

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Publication number
WO2020238296A1
WO2020238296A1 PCT/CN2020/076214 CN2020076214W WO2020238296A1 WO 2020238296 A1 WO2020238296 A1 WO 2020238296A1 CN 2020076214 W CN2020076214 W CN 2020076214W WO 2020238296 A1 WO2020238296 A1 WO 2020238296A1
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WIPO (PCT)
Prior art keywords
resonator
base layer
resonator according
wing
suspended
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Ceased
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PCT/CN2020/076214
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English (en)
French (fr)
Inventor
张孟伦
庞慰
杨清瑞
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/0211—Means for compensation or elimination of undesirable effects of reflections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/547—Notch filters, e.g. notch BAW or thin film resonator filters

Definitions

  • the embodiments of the present invention relate to the field of semiconductors, and more particularly to a bulk acoustic wave resonator, a filter having the resonator, and an electronic device having the filter.
  • FIG. 5A is a top view of a bulk acoustic wave resonator in the prior art
  • FIG. 5B is a schematic cross-sectional structure diagram taken along the line A1-A2 in FIG. 5A.
  • the structure corresponding to the reference signs is as follows:
  • Acoustic mirror In this example, it is a cavity. Bragg reflector or other equivalent acoustic reflection structures can also be used
  • AR effective acoustic area (acousto-electric coupling area)
  • the structure not shown in FIG. 5A and FIG. 5B further includes a part of the auxiliary process layer, the protective layer, the bottom electrode pin, etc.
  • the AR region of the resonator shown in Figures 5A and 5B not only produces useful piston-mode vibrations, but also produces unfavorable transversely propagating sound waves. These transverse-mode sound waves will propagate outside the AR region, causing resonance The energy loss and performance decline of the filter will further cause the performance of electronic devices using this type of resonator to decline, such as the insertion loss, roll-off, bandwidth and other key performance parameters of the filter.
  • Fig. 5C shows a structure of a resonator for suppressing acoustic leakage in the prior art.
  • the improvement is that a protrusion structure is added on the edge of the top electrode 50, which will form an acoustic impedance mismatch area at the edge of the AR area, so that the sound waves propagating laterally outward from the AR area Reflect back to the AR area, thereby suppressing energy loss.
  • the advantage of this structure is that it can increase the Q value of the resonator significantly.
  • the disadvantage is that the clutter in the resonator will increase.
  • the reason is that the protruding structure is still in the acousto-electric coupling area AR.
  • the protruding structure reflects sound waves and has electrical properties. Will also be affected.
  • Fig. 5D shows another resonator structure for suppressing sound wave leakage in the prior art.
  • the improvement lies in that: in addition to adding a protrusion structure on the edge of the top electrode 50, the top electrode 50 is further extended outward to form an air wing (hanging wing), and the pins 60 also form an arched structure (Hereinafter collectively referred to as suspended wing structure). Since there is only acoustic vibration in the suspended wing structure, the acoustic-electric coupling effect is much smaller than that of the protruding structure. Therefore, the clutter generated by the suspended wing structure when reflecting sound waves is significantly less than that of the protruding structure.
  • the present invention is proposed in order to reduce the generation of clutter in the resonator while suppressing the energy leakage of the resonator.
  • a bulk acoustic wave resonator including:
  • the bottom electrode is set above the substrate
  • the top electrode is opposed to the bottom electrode and has an electrode connection part
  • the piezoelectric layer is arranged above the bottom electrode and between the bottom electrode and the top electrode,
  • the edge of the top electrode is provided with a protruding structure and a void structure inside the protruding structure to form a gap.
  • the resonator includes suspended wings forming the void structure.
  • the suspended wing includes a single suspended wing structure.
  • the single suspended wing structure has a base layer portion and a suspended wing portion, and the basic layer portion is located at the top electrode; at least a part of the gap formed by the suspended wing portion is located between the base layer portion and the protruding structure between.
  • the lateral distance between the protruding structure and the base layer is in the range of 0.5-5 ⁇ m (optional 1-3 ⁇ m), and this scale directly superimposes the sound waves reflected by the BO and the sound waves reflected by the suspended wings.
  • the suspension wing portion has a rising portion connected to the base layer portion, and the rising portion has a stepped shape.
  • the suspended wing portion and the protruding structure at least partially overlap in the thickness direction of the resonator.
  • the suspended wing portion has a rising portion connected to the base layer portion, and the angle formed between the rising portion and the top surface of the top electrode ranges from 15° to 90° (optionally 40°- 70°). Or alternatively, another suspended wing part is formed at the end of the top electrode.
  • the single suspended wing structure has a base layer portion and a suspended wing portion, the basic layer portion is located at the top electrode; the basic layer portion is located between the suspended wing portion and the protruding structure.
  • the lateral distance between the protruding structure and the base layer part is in the range of 0-5 ⁇ m (optionally 0.5-3 ⁇ m); and/or the lateral width of the suspended wing part is 0.5-5 ⁇ m (optionally 1-3 ⁇ m); and/or the lateral distance between the protruding structure and the suspended wing portion is in the range of 1-10 ⁇ m (optionally 3-5 ⁇ m).
  • the single suspended wing structure has a base layer part and a suspended wing part, and the base layer part is located on the top of the protruding structure. Further optionally, the suspension wing part and the base layer part are on the same horizontal plane; or the suspension wing part includes a rising part connected with the base layer part.
  • the suspension wing includes a double suspension wing structure
  • the double suspension wing structure includes a base layer part and a first single suspension wing structure and a second single suspension wing structure respectively connected to two sides of the base layer part.
  • the first single suspension wing structure and the second single suspension wing structure are arranged asymmetrically.
  • the base layer portion is located inside the protrusion structure and disposed on the top electrode.
  • the base layer part is arranged on the top of the protruding structure, and further optionally, the base layer part and the top of the protruding structure are staggered in the lateral direction.
  • the resonator includes a bridge portion forming the gap structure.
  • the entire bridge portion is located inside the protruding structure.
  • the protrusion structure is located in the space formed by the bridge portion.
  • a recessed structure located in the gap on the inner side of the protruding structure.
  • the resonator further includes a cover layer covering the top electrode; and the base layer portion is a component of the cover layer.
  • the cover layer may cover only a part of the top electrode.
  • the gap is filled with air.
  • a filter including the above-mentioned bulk acoustic wave resonator.
  • an electronic device including the above-mentioned filter or bulk acoustic wave resonator.
  • Fig. 1A is a schematic partial cross-sectional view of a film bulk acoustic resonator according to an exemplary embodiment of the present invention
  • FIG. 1B exemplarily shows a schematic diagram of the positional relationship between the protrusion structure and the suspended wing structure
  • 1C is a schematic partial cross-sectional view of a thin film bulk acoustic resonator exemplarily showing an embodiment of a suspended wing structure
  • FIG. 1D is a schematic partial cross-sectional view of a film bulk acoustic resonator according to an exemplary embodiment of the present invention
  • FIG. 2A is a schematic partial cross-sectional view of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention
  • FIG. 2B is a schematic partial cross-sectional view of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention
  • FIG. 2C is a schematic partial cross-sectional view of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention.
  • 2D is a schematic partial cross-sectional view of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention
  • Figure 2E is a schematic partial cross-sectional view of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention.
  • 3A is a schematic partial cross-sectional view of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention
  • 3B is a schematic partial cross-sectional view of a film bulk acoustic resonator according to an exemplary embodiment of the present invention.
  • 3C is a schematic partial cross-sectional view of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention.
  • 3D is a schematic partial cross-sectional view of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention.
  • FIG. 4 is a schematic partial cross-sectional view of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention
  • FIG. 5A is a top view of a bulk acoustic wave resonator in the prior art
  • 5B is a schematic cross-sectional structure diagram taken along the line A1-A2 in FIG. 5A;
  • FIG. 5C is a resonator structure for suppressing acoustic wave leakage in the prior art
  • Fig. 5D shows another resonator structure for suppressing sound wave leakage in the prior art.
  • Fig. 1A is an embodiment of the present invention.
  • the figure shows the structure of the edge part of the top electrode.
  • the improvement lies in moving the suspension wing structure to the inside of the protrusion structure.
  • the suspension wing structure can be made of non-metallic materials.
  • the top electrode is made of metal material.
  • the material can be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a combination of the above metals or their alloys.
  • Protruding structure optional non-metallic materials, such as: silicon dioxide, silicon nitride, silicon carbide, aluminum nitride, magnesium oxide, aluminum oxide, or other metal oxides or nitrides or polymers, etc., or Use the same or different metal material as the top electrode, such as molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or a composite or alloy of the above metals.
  • optional non-metallic materials such as: silicon dioxide, silicon nitride, silicon carbide, aluminum nitride, magnesium oxide, aluminum oxide, or other metal oxides or nitrides or polymers, etc.
  • metal material such as molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or a composite or alloy of the above metals.
  • Passivation layer This layer is an optional protective layer, which can prevent water vapor, oxygen or other foreign substances from corroding the resonator (this layer is omitted and not shown in subsequent embodiments).
  • the protective layer can be selected from non-metallic materials such as silicon dioxide, silicon nitride, silicon carbide, aluminum nitride, magnesium oxide, aluminum oxide, or other metal oxides or nitrides or polymers.
  • the suspended wing structure includes a base layer 70 and a structural layer 72, in which:
  • Suspended wing base layer located on the passivation layer 80 or the top electrode 50, maintaining contact with the passivation layer 80 or the top electrode 50.
  • Suspended wing structure layer This part is divided into an inclined rising part and a horizontal part. There is an air gap under the rising part and the horizontal part. The gap can also be filled with other dielectric materials or polymers.
  • non-metallic materials such as: silicon dioxide, silicon nitride, silicon carbide, aluminum nitride, magnesium oxide, aluminum oxide, or other metal oxides or nitrides or polymers, etc.
  • Metal materials such as molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or their alloys.
  • the overall thickness range of the suspended wing structure layer can be (Optional )
  • the piezoelectric layer of the bulk wave resonator in the present invention can be made of materials such as aluminum nitride, zinc oxide, and the material can be doped with rare earth elements, and the piezoelectric layer and the electrode layer have a thin film structure.
  • the structure in Figure 1A can produce at least one of the following technical effects:
  • the combination of the suspended wings and the convex structure can significantly improve the acoustic reflection performance, thereby improving the Q value of the resonator.
  • the suspended wing structure is located inside the protruding structure. In this way, when sound waves propagate outward from the AR, they will first be reflected with the suspended wing structure, thereby reducing the sound wave energy transmitted to the protruding structure, thereby reducing the generation of spurious mode clutter.
  • the suspended wing structure in the traditional structure is usually an extension of the top electrode. Generally speaking, the material is also metal.
  • the suspension wing structure in this embodiment can be made of non-metallic materials, so the acoustic-electric coupling phenomenon can be avoided, thereby giving greater freedom in size design.
  • the protrusion structure can be located in the gap between the suspension wing structure and the piezoelectric layer, thereby changing the shape of the gap formed by the suspension wing structure.
  • the protrusion structure and the suspension wing structure can form a certain matching relationship to adjust the suspension wing.
  • the acoustic reflection performance of the structure which does not exist in the traditional structure.
  • D1 is the distance from the edge of the cantilever structure to the outer edge of the protruding structure, and its range is +5--5 ⁇ m, optionally +3--3 ⁇ m, such as 2 ⁇ m, where a positive value indicates that the edge of the cantilever structure is on the right side of the outer edge of the protruding structure , A negative value means on the left;
  • D2 means the distance between the starting point of the rising part of the suspended wing structure and the inner edge of the protruding structure, and its range is 0.5-5 ⁇ m, optional 1-3 ⁇ m;
  • H1 means the lower surface of the horizontal part of the suspended wing structure and The distance between the upper surface of the protruding structure, the range is 0-5 ⁇ m, 0.5-3 ⁇ m can be selected, such as 2 ⁇ m;
  • ⁇ represents the acute angle formed
  • the shape of the rising part of the suspended wing part of the structure proposed by the present invention may also be a stepped shape as shown in FIG. 1C.
  • the base layer portion 70 of the suspended wing structure may also only cover part of the top electrode.
  • the resonator further includes a cover layer covering the top electrode; the base layer part is a component of the cover layer.
  • the covering layer here can be a passivation layer or another metal material layer.
  • the cover layer may cover only a part of the top electrode.
  • the air gap between the suspended wing structure and the protruding structure in FIG. 1A can be omitted to form the suspended wing-protrusive bonding structure in FIG. 1D.
  • H1 corresponding to the above-mentioned H1 is zero.
  • the extension direction of the suspension wing structure can also be changed from extending to the side of the protruding structure to extending inward, thereby forming a structural change as shown in FIG. 2A.
  • the range is 0-5 ⁇ m, 0.5-3 ⁇ m can be selected, such as 2 ⁇ m;
  • the distance between the starting point of the rising part of the suspended wing structure and the inner edge of the protruding structure is D6, the range 1-10 ⁇ m, optional 3-5 ⁇ m, such as 2 ⁇ m;
  • the structure layer width D7 of the suspended wing structure ranges from 0.5-5 ⁇ m, optional 1-3 ⁇ m, such as 2 ⁇ m; the angle between the rising part of the suspended wing structure and the horizontal direction and the suspended wing
  • the distance between the lower surface of the horizontal part of the structure layer of the structure and the upper surface of the protruding structure can refer to the size range example in FIG. 1B.
  • the distance between two components represents the shortest straight line (longitudinal or horizontal) distance between the two.
  • the distance between the starting point of the rising part and the ending point of the falling part of the suspended wing structure is D8, the range is 0.5-5 ⁇ m, and 1-3 ⁇ m can be selected.
  • the distance between the lower surface of the horizontal part of the suspended wing structure and the protruding structure, the angle between the rising part and the descending part and the horizontal direction can be referred to H1 and ⁇ in Fig.
  • the distance between the edge of the base layer of the structure and the inner edge of the protruding structure can refer to D6 and D5 of FIG. 2A.
  • the embodiment structure in FIG. 2C can be formed.
  • the distance between the starting point of the rising part on the left and the outer edge of the protrusion structure is D10, the range is 0.5-5 ⁇ m, optional 1-3 ⁇ m, such as 2 ⁇ m; the end point of the right descending part is D9 from the inner edge of the protrusion structure, the range is 0.5 -5 ⁇ m, optional 1-3 ⁇ m, such as 2 ⁇ m.
  • the angle between the rising portion and the falling portion and the horizontal direction can refer to ⁇ in FIG. 1B
  • the distance between the lower surface of the horizontal portion of the suspended wing structure and the upper surface of the protruding structure can refer to H1 in FIG. 1B.
  • the suspended wing structure in FIG. 2A can also be moved to the upper surface of the protruding structure to form the embodiment of FIG. 2D.
  • the horizontal distance between the lower surface of the horizontal part of the suspended wing structure and the upper surface of the protruding structure is H3, ranging from 0-5 ⁇ m, 0.5-2 ⁇ m optional; the width of the suspended wing structure is D11, ranging from 0.5-5 ⁇ m, optional 1-3 ⁇ m .
  • the rising part of the suspended wing structure in FIG. 2D can also be omitted, and it becomes the flat style in FIG. 2E.
  • the cantilever structure of FIG. 1A and FIG. 2A can be combined to form the double cantilever-protrusion structure in FIG. 3A.
  • the left cantilever structure 72 please refer to Figure 1B.
  • the width of the base layer of the cantilever structure is D3, ranging from 1-10 ⁇ m, optional 3-5 ⁇ m, such as 2 ⁇ m, the right cantilever structure 73 and the left cantilever
  • the structure 72 remains symmetrical.
  • the length of the horizontal part of the right cantilever structure is D4, and the difference between this length and the length of the horizontal part of the left cantilever structure is +5--5 ⁇ m, optional +3--3 ⁇ m, such as 2 ⁇ m, where a positive value represents the right The side is longer than the left, and a negative value means it is shorter than the left.
  • the asymmetrical arrangement of the unequal height of the horizontal part in FIG. 3C can also be adopted.
  • H2 between the two cantilever structures 73 and 72 (the following surface is the reference)
  • the range is +5--5 ⁇ m, optional +3--3 ⁇ m, such as 2 ⁇ m
  • a positive value represents the height of the right cantilever structure 73
  • negative values are the opposite.
  • the base layer 70 of the double-wing suspended wing structure can also be moved to the upper surface of the protruding structure 51 to form the embodiment structure in FIG. 3D.
  • the right suspension wing structure 73 and the left suspension wing structure 72 may adopt the symmetrical size relationship shown in FIG. 3A, or the asymmetrical size relationship shown in FIGS. 3B and 3C.
  • the two end points of the base layer 70 of the suspended wing structure are not necessarily aligned with the two side edges of the protruding structure, and the distances D12 and D13 can be maintained respectively.
  • the range of D12 is +0.5-+3 ⁇ m or -0.5-3 ⁇ m, optional + 1-+2 ⁇ m or optional -1--2 ⁇ m, such as 1 ⁇ m, where a positive value means that the end point of the base layer is outside the upper surface of the protrusion, and a negative value means it is inside the upper surface of the protrusion.
  • the range of D13 refers to D12, and the meaning of positive and negative values is the same Description of D12.
  • the position feature of the suspended wing structure in the present invention can be combined with the traditional suspended wing-protrusion to obtain the embodiment shown in FIG. 4.
  • the structure corresponding to the reference numerals 51 and 52 constitutes a traditional wing-protrusion structure; the reference numeral 53 is an optional recessed structure.
  • the present invention proposes a bulk acoustic wave resonator, including:
  • the bottom electrode is set above the substrate
  • the top electrode is opposed to the bottom electrode and has an electrode connection part
  • the piezoelectric layer is arranged above the bottom electrode and between the bottom electrode and the top electrode,
  • the edge of the top electrode is provided with a protruding structure and a void structure inside the protruding structure to form a void.
  • the gap may be an air gap, or a filled gap filled with dielectric materials or polymers.
  • the inner side of the component when sound waves propagate laterally outward from the AR, the inner side of the component first reflects the sound wave, and the outer side of the component reflects the sound wave later.
  • the inner side and the outer side are determined in the order of the sound wave propagation direction.
  • the gap structure may be a suspended wing (single suspended wing or double suspended wing) or a bridge structure.
  • the two suspension wings can be arranged asymmetrically.
  • the present invention also provides a filter including a plurality of the above-mentioned bulk acoustic wave resonators.
  • the present invention also provides an electronic device including the above-mentioned filter or the above-mentioned bulk acoustic wave resonator.

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  • Acoustics & Sound (AREA)
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Abstract

一种体声波谐振器，包括：基底（10）；声学镜（20）；底电极（30），设置在基底（10）上方；顶电极（50），与所述底电极（30）对置，且具有电极连接部；和压电层（40），设置在底电极（30）上方以及底电极（30）与顶电极（50）之间，其中：所述顶电极（50）的边缘设置有突起结构（51）以及位于突起结构（51）内侧的形成空隙的空隙结构。一种具有该体声波谐振器的滤波器，以及一种具有该滤波器的电子设备，可以在抑制谐振器的能量泄漏的同时减少谐振器中的杂波生成。

Description

突起结构内侧设置空隙结构的谐振器及电子设备 技术领域
本发明的实施例涉及半导体领域，尤其涉及一种体声波谐振器，一种具有该谐振器的滤波器，以及一种具有该滤波器的电子设备。
背景技术
图5A中为现有技术中的体声波谐振器的俯视图，图5B为沿图5A中的A1-A2线截得的剖面结构示意图。在图5A和5B中，附图标记对应的结构如下：
10：基底
20：声学镜，此示例中是空腔，也可采用布拉格反射层或其他等效声波反射结构
30：底电极
40：压电薄膜(压电层)
50：顶电极
60：顶电极引脚
AR：有效声学区域(声电耦合区)
图5A和图5B中未示出的结构还包含部分辅助工艺层、保护层、底电极引脚等。
实际工作状态下，图5A和图5B所示的谐振器的AR区域不仅产生有用的活塞模式振动，还会产生不利的横向传播的声波，这些横向模式声波会向AR区域之外传播，造成谐振器能量损失，性能下滑，进一步会使使用该类谐振器的电子器件性能下滑，如导致滤波器的插损、滚降、带宽等关键性能参数恶化。
图5C为现有技术中的一种抑制声波泄漏的谐振器结构。其相对于图5B中结构的改进之处在于：在顶电极50的边缘上增加了突起结构，该结构会在AR区域边缘形成声学阻抗不匹配区域，从而可将由AR区域横向向外传播的声波反射回AR区域，从而抑制能量损耗。该结构优点是对谐振 器的Q值的提升效果较为显著，缺点是会使谐振器中的杂波增加，原因是突起结构仍在声电耦合区域AR内，突起结构在反射声波的同时电学性能也会受到影响。
图5D为现有技术中的另一种抑制声波泄漏的谐振器结构。其相对于图5C改进之处在于：除了在顶电极50的边缘增加了突起结构之外，还将顶电极50进一步向外延伸形成空气翼(悬翼)，同时引脚60也形成拱起结构(后文统称为悬翼结构)。由于加入的悬翼结构中仅存在声学振动，存在的声电耦合效应远小于突起结构，因此悬翼结构在反射声波时所生成的杂波要显著地少于突起结构。而图5D中的结构的缺点是，当声波从AR向外传播时，首先会与突起结构发生作用，形成反射并生成较为可观的杂波，另外被悬翼结构反射回来的声波也要与突起结构发生作用而再生成一部分杂波，因此图5D中的结构仍然会产生较多的杂波，从而使谐振器性能下降。
发明内容
为在抑制谐振器的能量泄漏的同时减少谐振器中的杂波生成，提出本发明。
根据本发明的实施例的一个方面，提出了体声波谐振器，包括：
基底；
声学镜；
底电极，设置在基底上方；
顶电极，与所述底电极对置，且具有电极连接部；和
压电层，设置在底电极上方以及底电极与顶电极之间，
其中：
所述顶电极的边缘设置有突起结构以及位于突起结构内侧的形成空隙的空隙结构。
可选的，所述谐振器包括形成所述空隙结构的悬翼。
可选的，所述悬翼包括单悬翼结构。
进一步可选的，所述单悬翼结构具有基础层部和悬翼部，所述基础层部位于所述顶电极；悬翼部形成的至少一部分空隙位于所述基础层部与所 述突起结构之间。可选的，所述突起结构与基础层部的横向距离在0.5-5μm(可选1-3μm)范围内，该尺度直接对由BO反射的声波和由悬翼反射的声波形成相长叠加有重要作用，需防止距离过近造成相互干扰和距离过远声波衰减导致干涉不显著；和/或所述突起结构的外缘与所述悬翼部的外缘之间的横向距离在0-±5μm(可选0-±3μm)范围内；和/或所述突起结构的顶部与所述悬翼部之间的纵向距离在0-5μm(可选0.5-3μm)范围内。或者可选的，所述悬翼部具有与所述基础层部相连的上升部，所述上升部为阶梯形状。或者可选的，所述悬翼部与所述突起结构在谐振器的厚度方向上至少部分重合。或者可选的，所述悬翼部具有与所述基础层部相连的上升部，所述上升部与顶电极的顶面之间形成的角度范围为15°-90°(可选40°-70°)。或者可选的，所述顶电极的端部形成有另外的悬翼部。
可选的，所述单悬翼结构具有基础层部和悬翼部，所述基础层部位于所述顶电极；所述基础层部位于悬翼部与所述突起结构之间。进一步可选的，所述突起结构与所述基础层部的横向距离在0-5μm(可选0.5-3μm)范围内；和/或所述悬翼部的横向宽度在0.5-5μm(可选1-3μm)范围内；和/或所述突起结构与所述悬翼部之间的横向距离在1-10μm(可选3-5μm)范围内。
可选的，所述单悬翼结构具有基础层部和悬翼部，所述基础层部位于所述突起结构的顶部。进一步可选的，所述悬翼部与所述基础层部处于同一水平面；或者所述悬翼部包括与所述基础层部连接的上升部。
可选的，所述悬翼包括双悬翼结构，所述双悬翼结构包括基础层部以及分别连接于基础层部两侧的第一单悬翼结构和第二单悬翼结构。进一步可选的，第一单悬翼结构与第二单悬翼结构为非对称布置。或者可选的，所述基础层部位于所述突起结构的内侧且设置于所述顶电极上。或者可选的，所述基础层部设置于所述突起结构的顶部，进一步可选的，所述基础层部与所述突起结构的顶部在横向上错开设置。
可选的，所述谐振器包括形成所述空隙结构的桥部。可选的，所述桥部整体位于所述突起结构的内侧。或者可选的，所述突起结构位于所述桥部形成的空间中。
可选的，在所述突起结构的内侧位于所述空隙中的凹陷结构。
可选的，所述谐振器还包括覆盖所述顶电极的覆盖层；且所述基础层部为所述覆盖层的组成部分。该覆盖层可以仅仅覆盖顶电极的一部分。
可选的，所述空隙中填充空气。
根据本发明的实施例的另一方面，提出了一种滤波器，包括上述的体声波谐振器。
根据本发明的实施例的还一方面，提出了一种电子设备，包括上述的滤波器或者体声波谐振器。
附图说明
以下描述与附图可以更好地帮助理解本发明所公布的各种实施例中的这些和其他特点、优点，图中相同的附图标记始终表示相同的部件，其中：
图1A为根据本发明的一个示例性实施例的薄膜体声波谐振器的示意性局部剖视图；
图1B示例性示出突起结构与悬翼结构之间的位置关系的示意图；
图1C为示例性示出了一种悬翼结构的实施例的薄膜体声波谐振器的示意性局部剖视图；
图1D为根据本发明的一个示例性实施例的薄膜体声波谐振器的示意性局部剖视图；
图2A为根据本发明的一个示例性实施例的薄膜体声波谐振器的示意性局部剖视图；
图2B为根据本发明的一个示例性实施例的薄膜体声波谐振器的示意性局部剖视图；
图2C为根据本发明的一个示例性实施例的薄膜体声波谐振器的示意性局部剖视图；
图2D为根据本发明的一个示例性实施例的薄膜体声波谐振器的示意性局部剖视图；
图2E为根据本发明的一个示例性实施例的薄膜体声波谐振器的示意 性局部剖视图；
图3A为根据本发明的一个示例性实施例的薄膜体声波谐振器的示意性局部剖视图；
图3B为根据本发明的一个示例性实施例的薄膜体声波谐振器的示意性局部剖视图；
图3C为根据本发明的一个示例性实施例的薄膜体声波谐振器的示意性局部剖视图；
图3D为根据本发明的一个示例性实施例的薄膜体声波谐振器的示意性局部剖视图；
图4为根据本发明的一个示例性实施例的薄膜体声波谐振器的示意性局部剖视图；
图5A中为现有技术中的体声波谐振器的俯视图；
图5B为沿图5A中的A1-A2线截得的剖面结构示意图；
图5C为现有技术中的一种抑制声波泄漏的谐振器结构；
图5D为现有技术中的另一种抑制声波泄漏的谐振器结构。
具体实施方式
下面通过实施例，并结合附图，对本发明的技术方案作进一步具体的说明。下述参照附图对本发明实施方式的说明旨在对本发明的总体发明构思进行解释，而不应当理解为对本发明的一种限制。
下面参照图描述根据本发明的一个实施例的体声波谐振器。需要指出的是，在本发明的实施例中，虽然以薄膜体声波谐振器为例进行说明，这些说明均可以适用于其他类型的体声波谐振器。
图1A是本发明的一个实施例，图中显示了顶电极边缘部分的结构，其改进之处在于将悬翼结构移动至突起结构内侧，此时，悬翼结构的材料可以采用非金属材料。
具体的，图1A中各个组成部分和材料描述如下：
50：顶电极，由金属材料制成，材料可选钼、钌、金、铝、镁、钨、 铜，钛、铱、锇、铬或以上金属的复合或其合金。
51：突起结构，可选非金属材料，如：二氧化硅、氮化硅、碳化硅、氮化铝、氧化镁、氧化铝，或其他金属氧化物或氮化物或多聚物等，也可选用与顶电极相同或不同的金属材料如钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金。
80和81：钝化层：该层属于可选的保护层，可防止水汽、氧气或其他外界物质侵蚀谐振器(后续实施例中该层略去不再示出)。保护层可选非金属材料如二氧化硅、氮化硅、碳化硅、氮化铝、氧化镁、氧化铝，或其他金属氧化物或氮化物或多聚物等。
悬翼结构包含基础层70和结构层72，其中：
70：悬翼基础层，位于钝化层80或顶电极50之上，与钝化层80或顶电极50保持接触。
72：悬翼结构层，该部分分为一个倾斜的上升部和一个水平部，上升部和水平部下方留有空气间隙，也可用其它介电材料或多聚物等填充该间隙。
70和72可选非金属材料，如：二氧化硅、氮化硅、碳化硅、氮化铝、氧化镁、氧化铝，或其他金属氧化物或氮化物或多聚物等等，也可采用金属材料如钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金。
悬翼结构层的整体厚度范围可为
Figure PCTCN2020076214-appb-000001
(可选
Figure PCTCN2020076214-appb-000002
)
此外，本发明中体波谐振器的压电层可采用氮化铝、氧化锌等材料并可以对所述材料进行稀土元素掺杂，且所述压电层和电极层均具有薄膜结构。
图1A中的结构至少可以产生如下技术效果之一：
1)悬翼和凸起结构的结合可显著提高声波反射性能，从而使谐振器的Q值得到提升。
2)悬翼结构位于突起结构内侧，这样，当声波从AR向外传播时，首先会与悬翼结构作用发生反射，从而减少传递至突起结构处的声波能量，从而减少寄生模式杂波生成。
3)传统结构中的悬翼结构通常为顶电极的延伸，一般来说材料也是 金属，当悬翼结构距离压电层纵向距离较近时，仍会产生一定的声电耦合现象，这样就限制了对悬翼结构的尺寸设计。本实施例中的悬翼结构可采用非金属材料，因此可避免声电耦合现象，从而给尺寸设计更大的自由度。
4)本结构中，突起结构可位于悬翼结构与压电层的间隙中，从而改变了悬翼结构所形成的间隙的形状，突起结构与悬翼结构可形成一定的配合关系，调节悬翼结构的声波反射性能，这在传统结构中是不存在的。
以上对于技术效果的描述在本发明的其他实施例中存在相似的结构时同样适用。
对于图1A中的结构，悬翼结构的尺寸及其与突起结构之间的位置关系有图1B之间的约束关系(已略去钝化层80)。其中D1是悬翼结构边缘到突起结构外边缘的距离，其范围为+5--5μm，可选+3--3μm，如2μm其中正值表示悬翼结构边缘在突起结构外边缘的右侧，负值则表示在左侧；D2表示悬翼结构的上升部起点和突起结构的内边缘的距离，其范围,0.5-5μm，可选1-3μm；H1表示悬翼结构的水平部下表面与突起结构上表面的距离，其范围为0-5μm，可选0.5-3μm，如2μm；θ表示悬翼结构的上升部与水平方向所构成的锐角，其范围为15°-90°，可选40°-70°，如50°。可以同时调节或者选择上述参数，也可以仅仅调节上述参数中的一种或两种或者三种。
基于某些工艺条件，本发明提出的结构的悬翼部分的上升部的形状也可是图1C中所示的阶梯状。此外，悬翼结构的基础层部分70也可仅覆盖部分的顶电极。可选的，所述谐振器还包括覆盖所述顶电极的覆盖层；所述基础层部为所述覆盖层的组成部分。这里的覆盖层可以是钝化层，也可以是其他的金属材料层。覆盖层可以仅仅覆盖顶电极的一部分。
另外，为了简化工艺并增强悬翼结构的结构稳定性，还可省去图1A中悬翼结构与突起结构之间的空气间隙，形成图1D中的悬翼-突起的贴合结构。此时，对应于上面提及的H1为零。
此外，悬翼结构的延伸方向还可由向突起结构侧延伸变为向内侧延伸，从而形成如图2A中的结构变化。悬翼结构的基础结构层边缘与突起结构内侧边缘具有间隙D5，其范围为0-5μm，可选0.5-3μm，如2μm；悬翼结构上升部起点与突起结构内边缘距离为D6，范围为1-10μm，可选3-5μm， 如2μm；悬翼结构的结构层宽度D7范围为0.5-5μm，可选1-3μm，如2μm；悬翼结构的上升部与水平方向夹角以及悬翼结构的结构层的水平部分下表面与突起结构上表面的距离可参考图1B中的尺寸范围实例。
在本发明中，两个部件之间的距离表示两者之间的最短直线(纵向或者横向)距离。
还可在图2A中的悬翼结构的右侧添加一下降部，形成图2B中的悬翼-突起结构。其中，悬翼结构的上升部的起点和下降部终点距离为D8，范围为0.5-5μm，可选1-3μm。此外，悬翼结构的水平部下表面和突起结构之间的距离，上升部和下降部与水平方向所成的角度可参照图1B的H1和θ，上升部起点到突起结构内边缘距离以及悬翼结构的基础层边缘与突起结构的内边缘的距离可参照图2A的D6和D5。
若将图2B中悬翼结构上升部起点和其左侧悬翼结构的基础层移动至突起结构外侧，则可形成图2C中的实施例结构。其中左侧的上升部起点与突起结构的外边缘的距离为D10，范围为0.5-5μm，可选1-3μm，如2μm；右侧下降部终点距离突起结构的内边缘距离D9，范围为0.5-5μm，可选1-3μm，如2μm。此外上升部和下降部与水平方向夹角可参考图1B的θ，悬翼结构的水平部下表面与突起结构的上表面的距离可参考图1B的H1。
还可将图2A中的悬翼结构移动到突起结构上表面，形成图2D的实施例。其中悬翼结构的水平部下表面与突起结构的上表面的水平距离为H3，范围0-5μm，可选0.5-2μm；悬翼结构的宽度为D11，范围为0.5-5μm，可选1-3μm。
基于特定工艺条件，也可略去图2D的悬翼结构的上升部，变为图2E中的平直样式。
此外，还可将图1A与图2A的悬翼结构相结合，形成图3A中的双悬翼-突起结构。其中左侧悬翼结构72的相关尺寸可参考图1B，悬翼结构的基础层宽度为D3，范围1-10μm，可选3-5μm，如2μm，右侧悬翼结构73和左侧悬翼结构72保持对称。通过采用双悬翼结构，可进一步增强对声波反射能力。
由于在左侧悬翼结构72下方存在突起结构，而在右侧悬翼结构73 下方无突起结构，则两个悬翼结构对声波反射的效果并不对称，为了对反射效果进行优化，可采用非对称的双悬翼结构，例如图3B所示的两侧悬翼结构的水平部不等长的结构。其中右侧悬翼结构的水平部长度为D4，该长度与左侧悬翼结构的水平部长度差异范围为+5--5μm，可选+3--3μm，如2μm，其中正值代表右侧长于左侧，负值代表短于左侧。
此外除了采用双悬翼结构的水平部不等长的非对称策略外，还可采用图3C中水平部不等高的非对称布置。其中两个悬翼结构73和72之间(以下表面为基准)存在落差H2，范围为+5--5μm，可选+3--3μm，如2μm，正值代表右侧悬翼结构73高于左侧悬翼结构72，负值则相反。
此外，双翼悬翼结构的基础层70也可移至突起结构51的上表面，从而形成图3D中的实施例结构。其中右侧悬翼结构73和左侧悬翼结构72可采用图3A的对称尺寸关系，也可采用图3B和3C中的非对称尺寸关系。此外，悬翼结构的基础层70的两个端点不一定与突起结构的两侧边缘对齐，可分别与之保持距离D12和D13，D12范围+0.5-+3μm或-0.5—3μm，可选+1-+2μm或可选-1--2μm，如1μm，其中正值表示基础层端点位于突起上表面以外，负值表示位于突起上表面之内，D13范围参考D12，且正负值含义同D12的说明。
此外，还可将本发明中的悬翼结构的位置特征与传统悬翼-突起结合，得到图4所示的实施例。其中附图标记51和52对应的结构构成传统的悬翼-突起结构；附图标记53为可选的凹陷结构。
基于以上，本发明提出了一种体声波谐振器，包括：
基底；
声学镜；
底电极，设置在基底上方；
顶电极，与所述底电极对置，且具有电极连接部；和
压电层，设置在底电极上方以及底电极与顶电极之间，
其中：
所述顶电极的边缘设置有突起结构以及位于突起结构内侧的形成空隙的空隙结构。
如前所述，空隙可以为空气间隙，也可以为填充有介电材料或者多聚 物等材料的填充间隙。
在本发明中，声波从AR向外横向传播时，部件的内侧先与声波发生反射，部件的外侧后与声波发生反射，换言之，以声波传播方向上的先后确定内侧和外侧。
形成该空隙结构的，可以为悬翼(单悬翼或者双悬翼)，也可以为桥部结构。在采用双悬翼的情况下，两个悬翼可以采用非对称布置。
基于以上，本发明还提出了一种滤波器，包括多个上述的体声波谐振器。本发明还提出了一种电子设备，包括上述的滤波器或者上述的体声波谐振器。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行变化，本发明的范围由所附权利要求及其等同物限定。

Claims (27)

  1. 一种体声波谐振器，包括：
    基底；
    声学镜；
    底电极，设置在基底上方；
    顶电极，与所述底电极对置，且具有电极连接部；和
    压电层，设置在底电极上方以及底电极与顶电极之间，
    其中：
    所述顶电极的边缘设置有突起结构以及位于突起结构内侧的形成空隙的空隙结构。
  2. 根据权利要求1所述的谐振器，其中：
    所述谐振器包括形成所述空隙结构的悬翼。
  3. 根据权利要求2所述的谐振器，其中：
    所述悬翼包括单悬翼结构。
  4. 根据权利要求3所述的谐振器，其中：
    所述单悬翼结构具有基础层部和悬翼部，所述基础层部位于所述顶电极；
    悬翼部形成的至少一部分空隙位于所述基础层部与所述突起结构之间。
  5. 根据权利要求4所述的谐振器，其中：
    所述突起结构与基础层部的横向距离(D2)在0.5-5μm，可选1-3μm范围内；和/或所述突起结构的外缘与所述悬翼部的外缘之间的横向距离(D1)在0-±5μm，可选0-±3μm范围内；和/或所述突起结构的顶部与所述悬翼部之间的纵向距离(H1)在0-5μm，可选0.5-3μm范围内。
  6. 根据权利要求4所述的谐振器，其中：
    所述悬翼部具有与所述基础层部相连的上升部，所述上升部为阶梯形状。
  7. 根据权利要求4所述的谐振器，其中：
    所述悬翼部与所述突起结构在谐振器的厚度方向上至少部分重合。
  8. 根据权利要求4所述的谐振器，其中：
    所述悬翼部具有与所述基础层部相连的上升部，所述上升部与顶电极的顶面之间形成的角度范围为15-90°，可选40-70°。
  9. 根据权利要求4所述的谐振器，其中：
    所述顶电极的端部形成有另外的悬翼部。
  10. 根据权利要求3所述的谐振器，其中：
    所述单悬翼结构具有基础层部和悬翼部，所述基础层部位于所述顶电极；
    所述基础层部位于悬翼部与所述突起结构之间。
  11. 根据权利要求10所述的谐振器，其中：
    所述突起结构与所述基础层部的横向距离(D5)在0-5μm，可选0.5-3μm范围内；和/或所述悬翼部的横向宽度(D7)在0.5-5μm，可选1-3μm范围内；和/或所述突起结构与所述悬翼部之间的横向距离(D6)在1-10μm，可选3-5μm范围内。
  12. 根据权利要求3所述的谐振器，其中：
    所述单悬翼结构具有基础层部和悬翼部，所述基础层部位于所述突起结构的顶部。
  13. 根据权利要求12所述的谐振器，其中：
    所述悬翼部与所述基础层部处于同一水平面；或者所述悬翼部包括与所述基础层部连接的上升部。
  14. 根据权利要求2所述的谐振器，其中：
    所述悬翼包括双悬翼结构，所述双悬翼结构包括基础层部以及分别连接于基础层部两侧的第一单悬翼结构和第二单悬翼结构。
  15. 根据权利要求14所述的谐振器，其中：
    第一单悬翼结构与第二单悬翼结构为非对称布置。
  16. 根据权利要求14所述的谐振器，其中：
    所述基础层部位于所述突起结构的内侧且设置于所述顶电极上。
  17. 根据权利要求14所述的谐振器，其中：
    所述基础层部设置于所述突起结构的顶部。
  18. 根据权利要求17所述的谐振器，其中：
    所述基础层部与所述突起结构的顶部在横向上错开设置。
  19. 根据权利要求1所述的谐振器，其中：
    所述谐振器包括形成所述空隙结构的桥部。
  20. 根据权利要求19所述的谐振器，其中：
    所述桥部整体位于所述突起结构的内侧。
  21. 根据权利要求19所述的谐振器，其中：
    所述突起结构位于所述桥部形成的空间中。
  22. 根据权利要求1所述的谐振器，其中：
    在所述突起结构的内侧位于所述空隙中的凹陷结构。
  23. 根据权利要求4或14所述的谐振器，其中：
    所述谐振器还包括覆盖所述顶电极的覆盖层；
    所述基础层部为所述覆盖层的组成部分。
  24. 根据权利要求23所述的谐振器，其中：
    所述覆盖层仅覆盖所述顶电极的一部分。
  25. 根据权利要求1-24中任一项所述的谐振器，其中：
    所述空隙中填充空气。
  26. 一种滤波器，包括根据权利要求1-25中任一项所述的体声波谐振器。
  27. 一种电子设备，包括根据权利要求26所述的滤波器或者根据权利要求1-25中任一项所述的体声波谐振器。
PCT/CN2020/076214 2019-05-31 2020-02-21 突起结构内侧设置空隙结构的谐振器及电子设备 Ceased WO2020238296A1 (zh)

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