WO2020233293A1 - 量子点及其制备方法、量子点发光器件、相关装置 - Google Patents

量子点及其制备方法、量子点发光器件、相关装置 Download PDF

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WO2020233293A1
WO2020233293A1 PCT/CN2020/084936 CN2020084936W WO2020233293A1 WO 2020233293 A1 WO2020233293 A1 WO 2020233293A1 CN 2020084936 W CN2020084936 W CN 2020084936W WO 2020233293 A1 WO2020233293 A1 WO 2020233293A1
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quantum dot
layer
shell layer
shell
dot light
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French (fr)
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冯靖雯
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京东方科技集团股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • the embodiments of the present disclosure relate to a quantum dot, a preparation method thereof, a quantum dot light-emitting device, and related devices.
  • Quantum dots also known as semiconductor nanocrystals and semiconductor nanoparticles, refer to semiconductor nanoparticles whose sizes are on the order of nanometers in the three dimensions of space or nanosolid materials composed of them as basic units. A collection of atoms and molecules on a scale. A light-emitting diode based on quantum dot materials is called a quantum dot light-emitting diode (QLED), which is a new type of light-emitting device.
  • QLED quantum dot light-emitting diode
  • the embodiments of the present disclosure provide a quantum dot, a preparation method thereof, a quantum dot light-emitting device, and related devices, which can simplify the film structure of the existing QLED device and improve the efficiency and lifetime of the device.
  • At least one embodiment of the present disclosure provides a quantum dot including: a core structure and a shell structure surrounding the core structure, wherein the outermost shell layer in the shell structure includes a hole transport material.
  • the shell structure further includes an inner shell layer located between the outermost shell layer and the inner core structure.
  • the material of the core structure is selected from at least one of II-VI group compounds, III-V group compounds, IV-VI group compounds, and I-IV-VII group compounds.
  • the material of the hole transport layer is an inorganic material.
  • the hole transport material includes one or a combination of NiO x , WO x , MoO x , VO x and CrO x .
  • the thickness of the outermost shell layer is about 1 nm to about 100 nm.
  • At least one embodiment of the present disclosure further provides a quantum dot light-emitting device, including a base substrate, and an anode, a hole injection layer, a quantum dot light-emitting layer, an electron transport layer, and a cathode sequentially arranged on the base substrate; Or a cathode, an electron transport layer, a quantum dot light-emitting layer, a hole injection layer and an anode which are sequentially arranged on the base substrate.
  • the quantum dot light-emitting layer includes any one of the quantum dots.
  • the hole injection layer and the quantum dot light-emitting layer are in direct contact.
  • the material of the hole injection layer includes one or a combination of PEDOT: PSS, CuPc, transition metal oxide, and metal chalcogenide compound.
  • the material of the electron transport layer is a metal oxide, a metal composite oxide or a metal coordination compound.
  • At least one embodiment of the present disclosure also provides a display panel including any of the quantum dot light-emitting devices.
  • At least one embodiment of the present disclosure also provides a display device including the display panel.
  • At least one embodiment of the present disclosure further provides a method for preparing the quantum dots, including: providing a core structure; forming a shell structure surrounding the core structure; and forming the outermost shell layer made of hole transport material .
  • forming the shell structure surrounding the core structure includes: forming the inner shell layer surrounding the core structure; and forming the outermost shell layer outside the inner shell layer.
  • the formation material of the outermost shell layer of a hole transport material includes: forming an oxide shell layer on the outside of the core structure; and performing ion exchange on the oxide shell layer to form a hole The outermost shell layer of transmission material.
  • forming the oxide shell layer outside the core structure includes: partially oxidizing the inner shell layer, and forming the oxide shell layer on the surface of the inner shell layer.
  • partially oxidizing the inner shell layer includes: passing O 2 or H 2 O 2 into the quantum dot solution including the inner shell layer.
  • performing ion exchange on the oxide shell layer includes: passing a cation exchange reagent and a ligand into the quantum dot solution including the oxide shell layer, and coordinate between the ligand and the cation The strength of the ability to achieve the ion exchange.
  • FIG. 1 is a schematic diagram of the structure of a quantum dot provided by an embodiment of the disclosure
  • FIG. 2 is one of the flowcharts of the method for preparing quantum dots according to an embodiment of the disclosure
  • FIG. 3 is the second flowchart of the method for preparing quantum dots according to an embodiment of the disclosure
  • FIG. 5 is a schematic diagram of the structure of each step of the method for preparing quantum dots according to an embodiment of the disclosure
  • FIG. 6 is a schematic structural diagram of a quantum dot light emitting device provided by an embodiment of the disclosure.
  • 7A-7E are schematic structural diagrams of the method for manufacturing a quantum dot light-emitting device with an upright structure provided by an embodiment of the disclosure after performing each step;
  • FIG. 8 is a schematic structural diagram of a quantum dot light-emitting device with an inverted structure provided by an embodiment of the disclosure.
  • each functional layer includes a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, and an electron transport layer.
  • a suitable device structure For example, the introduction of ZnO, an electron transport layer material, makes electron transport more efficient, so that electrons become multitons in QLED devices.
  • hole transport materials due to the deeper valence band of quantum dots, hole transport materials usually cannot guarantee sufficient hole injection This leads to an imbalance in the injection of electrons and holes, which affects the efficiency and life of the QLED device. Therefore, the QLED device also needs to be provided with an electron blocking layer.
  • the preparation of more functional layers increases the complexity of the manufacturing process and the uncontrollable degree of the manufacturing process.
  • the quantum dot provided by the embodiment of the present disclosure includes a core structure 1 and a shell structure 2 surrounding the core structure 1, and the outermost shell 21 of the shell structure 2 includes a hole transport material.
  • the material of the entire shell structure 2 may be a hole transport material, or the material of the outermost layer of the shell structure 2 may be a hole transport material.
  • the quantum dots provided in the embodiments of the present disclosure because the outermost shell layer of the quantum dots is a hole transport material, the quantum dots with this structure can be applied to the preparation of QLED devices.
  • the quantum dots The outermost hole transport material is used as the hole transport layer in the QLED device, reducing the process of making a separate hole transport layer, effectively simplifying the device structure and process; on the other hand, the outermost hole transport of the quantum dot The material is in contact with the electron transport layer in the QLED device.
  • As an electron blocking layer it can block part of the electron transport and solve the problem of electrons becoming multiple sons in the QLED device due to the more efficient electron transport, thereby effectively promoting electron-hole injection Balance, improve the efficiency and life of QLED devices.
  • the shell structure 2 further includes an inner shell layer 22, which is located on the outermost shell layer 21 and the core structure 1. between.
  • the material of the outermost shell layer 21 is a hole transport material.
  • the inner shell layer 22 may be a one-layer, two-layer or multi-layer structure. Since the core/shell structured quantum dots are relatively only core-structured quantum dots, the surface of the core/shell structured quantum dots has fewer defect centers and higher luminous efficiency. Therefore, core/shell structure and core/shell/shell structure are more commonly used. Quantum dots with different shell structures can be formed according to light-emitting requirements, and the material of the outermost shell layer of the quantum dot is a hole transport material, which belongs to the quantum dot structure protected by the present disclosure.
  • the inner shell layer when the inner shell layer is one layer, the inner shell layer may be any material layer such as ZnS, ZnSe, CdS, and CdSe layer; when the inner shell layer is a double layer In the case of a three-layer structure, the inner shell can be a combination of any two layers of ZnS, ZnSe, CdS and CdSe, such as ZnS/ZnSe, or ZnS/CdS; when the inner shell is a three-layer structure, the inner shell The layer can be a combination of any three layers of ZnS, ZnSe, CdS, and CdSe, such as ZnS/ZnSe/CdS, or ZnS/CdS/CdSe, etc., and so on, but the embodiments of the present disclosure are not limited thereto.
  • core structure of the core-shell quantum dot and the inner shell layer, and the inner shell layer and the outer shell layer are all bonded by covalent bonds.
  • the hole transport material may be selected from inorganic materials having hole transport capabilities.
  • the hole transport material includes but is not limited to one or any combination of NiO x , WO x , MoO x , VO x , and CrO x .
  • the semiconductor materials used in the core structure include, but are not limited to, Group II-VI compounds, Group III-V compounds, Group IV-VI compounds, or Group I-IV-VII compounds .
  • the core structure can be CdS, CdSe, CdTe, InP, PbS, CsPbCl3, CsPbBr3, CsPhI3 layer and other binary, ternary, quaternary compound layers.
  • the embodiments of the present disclosure are CdSe/ZnS/NiO quantum dots with a core structure of CdSe and a layer of ZnS on the inner shell, and InP/ZnS/NiO quantum dots with a core structure of InP and a layer of ZnS on the inner shell Take it as an example.
  • the thickness of the outermost shell layer may be about 1 nm to about 100 nm.
  • the embodiments of the present disclosure also provide a method for preparing the quantum dots. As shown in FIG. 2, the method for preparing includes the following operations.
  • the forming material is the outermost shell layer of the hole transport material.
  • the outermost shell layer of the quantum dots prepared by the method is a hole transport material, so that the quantum dots with this structure can be used in the preparation of QLED devices
  • the outermost hole transport material of the quantum dot can be used as the hole transport layer in the QLED device, reducing the process of making a separate hole transport layer, effectively simplifying the device structure and process;
  • the outermost hole transport material of the quantum dot is in contact with the electron transport layer in the QLED device.
  • As an electron blocking layer it can block part of the electron transport, and solves the problem that the electrons in the QLED device become more efficient due to the more efficient electron transport in the related technology. Therefore, it can effectively promote the balance of electron-hole injection and improve the efficiency and lifetime of QLED devices.
  • forming a shell structure surrounding the core structure may include the following operations.
  • an inner shell layer surrounding the inner core structure For example, forming the inner shell ZnS surrounding the core structure CdSe, that is, forming a CdSe/ZnS structure.
  • the forming material is the outermost shell layer of the hole transport material, as shown in FIG. 4, which may include the following operations:
  • S402 Perform ion exchange on the oxide shell layer to form the outermost shell layer whose material is the hole transport material.
  • forming an oxide shell layer outside the core structure may include:
  • the inner shell is partially oxidized to form an oxide shell on the surface of the inner shell.
  • the inner shell ZnS of the quantum dot CdSe/ZnS is partially oxidized, and an oxide shell ZnO is formed on the surface of the inner shell ZnS, that is, a CdSe/ZnS/ZnO structure.
  • partially oxidizing the inner shell layer may include passing O 2 or H 2 O 2 into the quantum dot solution including the inner shell layer.
  • performing ion exchange on the oxide shell may include the following operations:
  • a cation exchange reagent and a ligand are passed into the quantum dot solution including the oxide shell, and the ion exchange is realized by the coordination ability between the ligand and the cation.
  • the cation exchange reagent can be nickel chloride hexahydrate, nickel sulfate hexahydrate or tungsten hexachloride, etc.
  • the ligand can be tributylphosphine (PDT) or tri-n-octylphosphine oxide ligand (TOPO), etc.
  • Ni 2+ occupies the position of Zn 2+ in the ZnO shell, forming the outermost shell of the inorganic hole transport material NiO ,
  • the CdSe/ZnS/NiO outermost shell layer is the hole transport material NiO quantum dot.
  • CdSe/ZnS core-shell quantum dots can be formed by, but not limited to, solution phase synthesis, hydrothermal, solvothermal, and other methods.
  • Ni 2+ occupies the position of Zn 2+ in the ZnO shell, and the material is the outermost shell of the inorganic hole transport material NiO, which is obtained
  • the outermost shell layer is a hole transport material CdSe/ZnS/NiO quantum dot.
  • the quantum dots provided in the embodiments of the present disclosure can be prepared through the above steps, and a schematic diagram of the quantum dot preparation process is shown in FIG. 5.
  • the embodiments of the present disclosure also provide a quantum dot light-emitting device, as shown in FIG. 6, comprising an anode 20, a hole injection layer 30, a quantum dot light-emitting layer 40, an electron transport layer 50 and The cathode 60, wherein the quantum dot light-emitting layer 40 includes any one of the quantum dots provided in the embodiments of the present disclosure.
  • the quantum dot light-emitting device provided by the embodiments of the present disclosure, wherein the quantum dot light-emitting layer includes any one of the quantum dots provided in the embodiments of the present disclosure.
  • the outermost shell layer of the quantum dot is a hole transport material
  • the quantum dots of this structure can be used in the preparation of QLED devices.
  • the outermost hole transport material of the quantum dots can be used as the hole transport layer in the QLED device, reducing the cost of making a separate hole transport layer.
  • the technology effectively simplifies the device structure and process; on the other hand, the outermost hole transport material of the quantum dot is in contact with the electron transport layer in the QLED device, acting as an electron blocking layer, which can block part of the electron transport and solve the problem of electron transport. It is more efficient to make electrons become a multi-child problem in QLED devices, thereby effectively promoting electron-hole injection balance and improving the efficiency and life of QLED devices.
  • the hole injection layer and the quantum dot light emitting layer are in direct contact, so that the hole injection layer and the hole transport material can form a composite void with a certain energy level gradient.
  • the hole transport layer can maximize the hole transport efficiency and improve the carrier utilization.
  • the material of the hole injection layer may include, but is not limited to, PEDOT (poly(3,4-ethylenedioxythiophene): PSS (polystyrene sodium sulfonate) ), CuPc (copper phthalocyanine), one or a combination of transition metal oxides, and metal chalcogenide compounds.
  • transition metal oxides include, but are not limited to, one or a combination of MoOx, VOx, WOx, CrOx, and CuO.
  • the chalcogenide compound includes, but is not limited to, one or a combination of MoS 2 , MoSe 2 , WS 2 , WSe 2 , and CuS.
  • the material of the electron transport layer may be a metal oxide, a metal composite oxide, or a metal coordination compound.
  • metal oxides such as ZnO, etc., metal composite oxides such as ZnMgO, etc., metal coordination compounds such as 8-quinoline aluminum, etc., but the embodiments of the present disclosure are not limited thereto.
  • the anode may be a doped metal oxide
  • the doped metal oxide includes, but is not limited to, indium-doped tin oxide (ITO) and indium-doped zinc oxide. (IZO) and other one or more.
  • the cathode may be one or more of metal materials, conductive metal oxide materials, and conductive carbon materials; the metal materials include, but are not limited to, Al, Ag One or more of, Cu, Mo, Au or their alloys; conductive metal oxide materials include but not limited to one or more of ITO, IZO, and AZO; conductive carbon materials include but are not limited to carbon nanotubes, One or more of graphene, graphene oxide, etc.
  • the cathode material is Al, Ag, or Mg/Ag, but the embodiments of the present disclosure are not limited thereto.
  • the thickness of the cathode is about 500 nm to about 1000 nm.
  • the structure of the quantum dot light-emitting device provided by the embodiment of the present disclosure may be an upright structure or an inverted structure.
  • each film layer in the quantum dot light-emitting device includes but are not limited to one or more of spin coating, evaporation, chemical vapor deposition, physical vapor deposition, magnetron sputtering, and the like.
  • the base substrate 10 is cleaned, and a layer of anode 20 is vapor-deposited on the base substrate 10 by an evaporation method, as shown in FIG. 7A.
  • the base substrate 10 may be a rigid substrate or a flexible substrate.
  • rigid substrates include but are not limited to glass, etc.
  • flexible substrates include, but are not limited to, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide (PI) , Polyethylene (PE), polyvinyl chloride (PV), etc. one or more of them.
  • the hole injection layer 30 is prepared on the anode 20 by a spin coating method, as shown in FIG. 7B.
  • a PEDOT:PSS hole injection material is spin-coated.
  • a spin coating method is used to prepare a quantum dot light-emitting layer 40 on the hole injection layer 30, as shown in FIG. 7C.
  • the quantum dot light-emitting layer includes the CdSe/ZnS/NiO quantum dots provided in the embodiments of the present disclosure.
  • the electron transport layer 50 is prepared on the quantum dot light-emitting layer 40 by spin coating, as shown in FIG. 7D.
  • the material of the electron transport layer 50 may be ZnO or ZnMgO.
  • a layer of cathode 60 is vapor-deposited on the electron transport layer 50 by an evaporation method, as shown in FIG. 7E.
  • the cathode material can be Al or the like, and the thickness is about 500 nm to about 1000 nm.
  • the packaging is performed to complete the preparation of the quantum dot light-emitting device with the upright structure in the embodiment of the present disclosure.
  • the quantum dot light-emitting device shown in FIG. 7E prepared according to the embodiment of the present disclosure has an upright structure. It is also possible to prepare a quantum dot light emitting device with an inverted structure.
  • a quantum dot light emitting device with an inverted structure is formed by sequentially forming a cathode 60, an electron transport layer 50, a quantum dot light emitting layer 40, a hole injection layer 30, and an anode on a base substrate 10. 20.
  • the structure of the inverted structure is shown in Figure 8.
  • the preparation process of the quantum dot light-emitting device with the inverted structure please refer to the method for preparing the quantum dot light-emitting device with the upright structure, except that the preparation sequence of each film layer is changed, which will not be repeated here.
  • the present disclosure does not limit the light emission type of the quantum dot light emitting device, such as not limited to bottom light emission or top light emission.
  • the electrodes on the light emitting side of the quantum dot light emitting device in the anode and cathode are transparent electrodes.
  • the quantum dot light-emitting device provided by the embodiment of the present disclosure further includes other functional film layers well known to those skilled in the art, and the content of the application is not covered here.
  • the embodiments of the present disclosure also provide a display panel, including the quantum dot light-emitting device provided by the embodiments of the present disclosure.
  • the problem-solving principle of the display panel is similar to that of the aforementioned quantum dot light-emitting device, so the implementation of the display panel can refer to the implementation of the aforementioned quantum dot light-emitting device, which will not be repeated here.
  • an embodiment of the present disclosure further provides a display device, including the display panel provided by the embodiment of the present disclosure.
  • the display device can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, etc.
  • the other indispensable components of the display device should be understood and obtained by those of ordinary skill in the art, and will not be repeated here.
  • the problem-solving principle of the display device is similar to the aforementioned quantum dot light-emitting device, so the implementation of the display device can refer to the implementation of the aforementioned quantum dot light-emitting device, which will not be repeated here.
  • the embodiments of the present disclosure provide a quantum dot and a preparation method thereof, a quantum dot light-emitting device, and related devices.
  • the quantum dot includes a core structure and a shell structure surrounding the core structure.
  • the material of the outermost shell in the shell structure is hole transport material.
  • the core-shell structure of the quantum dot provided by the embodiment of the present disclosure because the outermost shell of the quantum dot is a hole transport material, the quantum dot of this structure can be used in the preparation of QLED devices.
  • the quantum dot The outermost hole transport material of the dot is used as the hole transport layer in the QLED device, reducing the process of making a separate hole transport layer, effectively simplifying the device structure and process; on the other hand, the outermost hole of the quantum dot
  • the hole transport material is in contact with the electron transport layer in the QLED device.
  • As an electron blocking layer it can block part of the electron transport and solve the problem of electrons becoming multiple sons in the QLED device due to the more efficient electron transport in related technologies, thereby effectively promoting The electron-hole injection balance improves the efficiency and lifetime of QLED devices.

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Abstract

提供一种量子点及其制备方法、量子点发光器件、相关装置，所述量子点包括：内核结构(1)和包围所述内核结构(1)的壳层结构(2)，所述壳层结构(2)的最外侧壳层(21)为空穴传输材料，这样可以将该结构的量子点应用于QLED器件的制备中。

Description

量子点及其制备方法、量子点发光器件、相关装置
相关申请的交叉引用
本申请要求于2019年05月22日向CNIPA提交的名称为“量子点及其制备方法、量子点发光器件、相关装置”的中国专利申请No.201910427205.0的优先权，其全文通过引用为所有目的合并于本文。
技术领域
本公开的实施例涉及一种量子点及其制备方法、量子点发光器件、相关装置。
背景技术
量子点(Quantum dots，QDs)，又名半导体纳米晶、半导体纳米颗粒，是指尺寸在空间三个维度上均处于纳米数量级半导体纳米颗粒或由它们作为基本单元构成的纳米固体材料，是在纳米尺度上的原子和分子的集合体。基于量子点材料的发光二极管被称为量子点发光二极管(Quantum dot light-emitting diode，QLED)，是一种新型的发光器件。
发明内容
本公开的实施例提供一种量子点及其制备方法、量子点发光器件、相关装置，可以简化现有QLED器件的膜层结构以及提高器件的效率与寿命。
本公开的至少一个实施例提供一种量子点，包括：内核结构和包围所述内核结构的壳层结构，其中，所述壳层结构中最外侧壳层包括空穴传输材料。
例如，所述壳层结构还包括内侧壳层，所述内侧壳层位于所述最外侧壳层和所述内核结构之间。
例如，所述内核结构的材料选自Ⅱ-Ⅵ族化合物、Ⅲ-Ⅴ族化合物、Ⅳ-Ⅵ族化合物和Ⅰ-Ⅳ-Ⅶ族化合物的至少之一。
例如，所述空穴传输层的材料为无机材料。
例如，所述空穴传输材料包括NiO x、WO x、MoO x、VO x和CrO x其中之一或其组合。
例如，所述最外侧壳层的厚度为约1nm-约100nm。
本公开的至少一个实施例还提供一种量子点发光器件，包括衬底基板，以及依次设置在所述衬底基板上的阳极、空穴注入层、量子点发光层、电子传输层和阴极；或依次设置在所述衬底基板上的阴极，电子传输层，量子点发光层，空穴注入层和阳极。所述量子点发光层包括任一所述量子点。
例如，所述空穴注入层和所述量子点发光层直接接触。
例如，所述空穴注入层的材料包括PEDOT：PSS、CuPc、过渡金属氧化物、和金属硫系化合物其中之一或其组合。
例如，所述电子传输层的材料为金属氧化物、金属复合氧化物或金属配位化合物。
本公开的至少一个实施例还提供一种显示面板，包括任一所述量子点发光器件。
本公开的至少一个实施例还提供一种显示装置，包括所述显示面板。
本公开的至少一个实施例还提供一种所述量子点的制备方法，包括：提供一内核结构；形成包围所述内核结构的壳层结构；以及形成材料为空穴传输材料的最外侧壳层。
例如，所述形成包围所述内核结构的所述壳层结构包括：形成包围所述内核结构的所述内侧壳层；以及在所述内侧壳层外侧形成所述最外侧壳层。
例如，所述形成材料为空穴传输材料的所述最外侧壳层包括：在所述内核结构的外侧形成氧化物壳层；以及对所述氧化物壳层进行离子交换，形成材料为空穴传输材料的所述最外侧壳层。
例如，在所述内核结构外侧形成所述氧化物壳层包括：将所述内侧壳层部分氧化，在所述内侧壳层表面形成所述氧化物壳层。
例如，将所述内侧壳层部分氧化包括：向包括所述内侧壳层的量子点溶 液中通入O 2或H 2O 2。
例如，对所述氧化物壳层进行离子交换包括：在包括所述氧化物壳层的所述量子点溶液中通入阳离子交换试剂及配体，通过所述配体与所述阳离子间配位能力的强弱实现所述离子交换。
附图说明
以下将结合附图对本公开的实施例进行更详细的说明，以使本领域普通技术人员更加清楚地理解本公开的实施例，其中：
图1为本公开实施例提供的量子点的结构示意图；
图2为本公开实施例提供的量子点的制备方法的流程图之一；
图3为本公开实施例提供的量子点的制备方法的流程图之二；
图4为本公开实施例提供的量子点的制备方法的流程图之三；
图5为本公开实施例提供的量子点的制备方法各步骤的结构示意图；
图6为本公开实施例提供的量子点发光器件的结构示意图；
图7A-图7E为本公开实施例提供的正置结构的量子点发光器件的制备方法在执行各步骤之后的结构示意图；
图8为本公开实施例提供的倒置结构的量子点发光器件的结构示意图。
具体实施方式
下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本公开一部分实施例，并不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在无需做出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。需要注意的是，自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本公开，而不能理解为对本公开的限制。
除非另外定义，此处使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第 二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“上”、“下”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
在QLED器件中，各个功能层包括空穴注入层、空穴传输层、量子点发光层、电子传输层。为了获得QLED器件需要的性能，需要选择合适的器件结构和各功能层的传输特性相匹配。例如，电子传输层材料ZnO的引入，使电子传输更为高效，从而使电子在QLED器件中成为多子，但由于量子点较深的价带，空穴传输材料通常不能保证足够的空穴注入，这就导致电子空穴的注入不平衡，使得QLED器件效率和寿命均受到影响，因此QLED器件还需要设置电子阻挡层。而且，较多的功能层的制备增加了制程工艺的复杂程度和制备过程中的不可控程度。
为了使本公开的目的，技术方案和优点更加清楚，下面结合附图，对本公开实施例提供的量子点及其制备方法、量子点发光器件、相关装置的具体实施方式进行详细地说明。
附图中各层薄膜厚度和形状不反映量子点和量子点发光器件的真实比例，目的只是示意说明本公开内容。
本公开实施例提供的量子点，如图1所示，包括内核结构1和包围内核结构1的壳层结构2，壳层结构2中最外侧壳层21包括空穴传输材料。
例如，可以是整层壳层结构2的材料为空穴传输材料，也可以是壳层结构2的最外侧层的材料为空穴传输材料。
本公开实施例提供的所述量子点，由于该量子点的最外侧壳层为空穴传输材料，这样可以将该结构的量子点应用于QLED器件的制备中，一方面可以将该量子点的最外层空穴传输材料作为QLED器件中的空穴传输层，减少单独制作一层空穴传输层的工艺，有效简化器件结构与工艺制程；另一方面该量子点的最外层空穴传输材料与QLED器件中的电子传输层相接触，作为 电子阻挡层，能够阻挡部分电子传输，解决由于电子传输更为高效使电子在QLED器件中成为多子的问题，从而有效促进电子-空穴注入平衡，提高QLED器件的效率与寿命。
例如，在本公开实施例提供的所述量子点中，如图1所示，壳层结构2还包括内侧壳层22，所述内侧壳层22位于所述最外侧壳层21和内核结构1之间。最外侧壳层21的材料为空穴传输材料。例如，内侧壳层22可以是一层、两层或多层结构，由于核/壳结构量子点相对只有核结构的量子点，核/壳结构量子点表面的缺陷中心较少，发光效率较高，因此，采用较多的是核/壳结构和核/壳/壳结构。可以根据发光需要来形成不同壳层结构的量子点，而该量子点最外侧壳层的材料是空穴传输材料均属于本公开保护的量子点结构。
例如，在本公开实施例提供的所述量子点中，当内侧壳层为一层时，内侧壳层可以为ZnS、ZnSe、CdS和CdSe层等任何之一材料层；当内侧壳层为双层结构时，内侧壳层可以为ZnS、ZnSe、CdS和CdSe等中任意两层的组合层结构，如ZnS/ZnSe，或ZnS/CdS层等；当内侧壳层为三层结构时，内侧壳层可以为ZnS、ZnSe、CdS和CdSe等中任意三层的组合，如ZnS/ZnSe/CdS，或ZnS/CdS/CdSe等，依次类推，但是本公开的实施例并不限于此。
需要说明的是，核壳结构量子点的内核结构和内侧壳层之间，以及内侧壳层和外侧壳层之间均通过共价键进行结合。
例如，在本公开实施例提供的所述量子点中，空穴传输材料可选自具有空穴传输能力的无机材料。例如，空穴传输材料包括但不限于NiO x、WO x、MoO x、VO x、和CrO x其中之一或任意组合。
例如，在本公开实施例提供的所述量子点中，内核结构使用的半导体材料包括但不限于Ⅱ-Ⅵ族化合物、Ⅲ-Ⅴ族化合物、Ⅳ-Ⅵ族化合物或Ⅰ-Ⅳ-Ⅶ族化合物。例如，内核结构可以为CdS、CdSe、CdTe、InP、PbS、CsPbCl3、CsPbBr3、CsPhI3层以及其它二元、三元、四元的化合物层。
例如，本公开实施例是以内核结构为CdSe、内侧壳层为一层ZnS的CdSe/ZnS/NiO量子点，以及内核结构为InP、内侧壳层为一层ZnS的InP/ZnS/NiO量子点为例进行说明的。
例如，为了获得希望的量子点的发光效率以及空穴传输材料的空穴传输能力，在本公开实施例提供的所述量子点中，最外侧壳层的厚度可以为约1nm-约100nm。
基于同一构思，本公开实施例还提供了一种所述量子点的制备方法，如图2所示，所述制备方法包括如下操作。
S201、提供一内核结构；
S202、形成包围内核结构的壳层结构；
S203、形成材料为空穴传输材料的最外侧壳层。
本公开实施例提供的所述量子点的制备方法，采用所述制备方法制备得到的量子点的最外侧壳层为空穴传输材料，这样可以将该结构的量子点应用于QLED器件的制备中，一方面可以将该量子点的最外层空穴传输材料作为QLED器件中的空穴传输层，减少单独制作一层空穴传输层的工艺，有效简化器件结构与工艺制程；另一方面该量子点的最外层空穴传输材料与QLED器件中的电子传输层相接触，作为电子阻挡层，能够阻挡部分电子传输，解决相关技术中由于电子传输更为高效使电子在QLED器件中成为多子的问题，从而有效促进电子-空穴注入平衡，提高QLED器件的效率与寿命。
例如，在本公开实施例提供的所述量子点的制备方法中，形成包围内核结构的壳层结构，如图3所示，可以包括如下操作。
S301、形成包围内核结构的内侧壳层。例如，形成包围内核结构CdSe的内侧壳层ZnS，即形成CdSe/ZnS结构。
S302、在内侧壳层外侧形成最外侧壳层。例如，如采用O 2或H 2O 2将内侧壳层ZnS部分氧化，形成最外侧壳层ZnO。
例如，在本公开实施例提供的所述量子点的制备方法中，形成材料为空 穴传输材料的最外侧壳层，如图4所示，可以包括如下操作：
S401、在内核结构外侧形成氧化物壳层；
S402、对氧化物壳层进行离子交换，形成材料为空穴传输材料的最外侧壳层。
例如，在本公开实施例提供的所述量子点的制备方法中，在内核结构外侧形成氧化物壳层，可以包括：
将内侧壳层部分氧化，在内侧壳层表面形成氧化物壳层。例如，将量子点CdSe/ZnS的内侧壳层ZnS部分氧化，在内侧壳层ZnS的表面形成氧化物壳层ZnO，即CdSe/ZnS/ZnO结构。
例如，在本公开实施例提供的所述量子点的制备方法中，将内侧壳层部分氧化可以包括向包括内侧壳层的量子点溶液中通入O 2或H 2O 2。例如，向CdSe/ZnS核壳量子点溶液中通入O 2或H 2O 2，使量子点外层ZnS部分被氧化成为ZnO层，形成CdSe/ZnS/ZnO多层结构量子点。
例如，在本公开实施例提供的所述量子点的制备方法中，对氧化物壳层进行离子交换，可以包括如下操作：
在包括氧化物壳层的量子点溶液中通入阳离子交换试剂及配体，通过配体与阳离子间配位能力的强弱实现离子交换。例如，阳离子交换试剂可以为六水合氯化镍、六水合硫酸镍或六氯化钨等，配体可以为三丁基膦(PDT)或三正辛基氧膦配体(TOPO)等；如在量子点CdSe/ZnS/ZnO溶液中加入六水合氯化镍、六水合硫酸镍或六氯化钨等离子交换试剂，以及三丁基膦(PDT)或三正辛基氧膦配体(TOPO)等配体，通过配体与离子间的配位能力强弱实现离子交换，得到CdSe/ZnS/XO(X是Ni或W等)最外侧壳层为空穴传输材料的量子点。例如，在CdSe/ZnS/ZnO溶液中加入六水合氯化镍(NiCl 2·6H 2O)离子交换试剂和三丁基膦(PDT)配体，由于PDT与Zn 2+的配位能力强于与Ni 2+的配位能力，因此PDT与Zn 2+配位形成配位化合物，Ni 2+占用ZnO壳层中Zn 2+的位置，形成材料为无机空穴传输材料NiO的最外侧壳层，即得 到CdSe/ZnS/NiO最外侧壳层为空穴传输材料NiO的量子点。
下面以制备CdSe/ZnS/NiO量子点为例对本公开实施例提供的所述量子点的制备方法进行详细说明。
形成CdSe/ZnS核壳量子点。例如，可以通过但不限于溶液相合成法、水热法、溶剂热法等方法形成CdSe/ZnS核壳量子点。
在CdSe/ZnS核壳量子点溶液中通入O 2或加入H 2O 2，使量子点壳层ZnS部分被氧化成为ZnO，形成CdSe/ZnS/ZnO结构量子点。
在CdSe/ZnS/ZnO溶液中加入六水合氯化镍(NiCl 2·6H 2O)离子交换试剂及三丁基膦(PDT)配体，由于PDT与Zn 2+的配位能力大于与Ni 2+的配位能力，因此PDT与Zn 2+配位形成配位化合物，Ni 2+占用ZnO壳层中Zn 2+的位置，形成材料为无机空穴传输材料NiO的最外侧壳层，即得到最外侧壳层为空穴传输材料的CdSe/ZnS/NiO量子点。
通过上述步骤即可制备出本公开实施例提供的所述量子点，量子点制备流程示意图如图5所示。
基于同一构思，本公开的实施例还提供了一种量子点发光器件，如图6所示，包括依次层叠设置的阳极20、空穴注入层30、量子点发光层40、电子传输层50和阴极60，其中量子点发光层40包括本公开实施例提供的所述任一项的量子点。
本公开实施例提供的所述量子点发光器，其中量子点发光层包括本公开实施例提供的所述任一项的量子点，由于该量子点的最外侧壳层为空穴传输材料，这样可以将该结构的量子点应用于QLED器件的制备中，一方面可以将该量子点的最外层空穴传输材料作为QLED器件中的空穴传输层，减少单独制作一层空穴传输层的工艺，有效简化器件结构与工艺制程；另一方面该量子点的最外层空穴传输材料与QLED器件中的电子传输层相接触，作为电子阻挡层，能够阻挡部分电子传输，解决由于电子传输更为高效使电子在QLED器件中成为多子的问题，从而有效促进电子-空穴注入平衡，提高QLED 器件的效率与寿命。
例如，在本公开实施例提供的所述量子点发光器件中，空穴注入层和量子点发光层直接接触，这样可以使空穴注入层和空穴传输材料组成具有一定能级梯度的复合空穴传输层，能够最大程度的增加空穴的传输效率，提高载流子的利用率。
例如，在本公开实施例提供的所述量子点发光器件中，空穴注入层的材料可以包括但不限于PEDOT(聚(3,4-乙烯二氧噻吩)：PSS(聚苯乙烯磺酸钠)、CuPc(酞菁铜)、过渡金属氧化物、金属硫系化合物其中之一或组合。其中，过渡金属氧化物包括但不限于MoOx、VOx、WOx、CrOx、CuO其中之一或组合，金属硫系化合物包括但不限于MoS 2、MoSe 2、WS 2、WSe 2、CuS其中之一或组合。
例如，在本公开实施例提供的所述量子点发光器件中，电子传输层的材料可以为金属氧化物、金属复合氧化物或金属配位化合物。其中，金属氧化物如ZnO等，金属复合氧化物如ZnMgO等，金属配位化合物如8-喹啉铝等，但是本公开的实施例并不限于此。
例如，在本公开实施例提供的所述量子点发光器件中，阳极可以为掺杂金属氧化物，该掺杂金属氧化物包括但不限于铟掺杂氧化锡(ITO)、铟掺杂氧化锌(IZO)等其中一种或多种。
例如，在本公开实施例提供的所述量子点发光器件中，阴极可以为金属材料、导电金属氧化物材料、导电碳材料其中一种或多种；其中金属材料包括但不限于如Al、Ag、Cu、Mo、Au或它们的合金等其中一种或多种；导电金属氧化物材料包括但不限于ITO、IZO、AZO其中一种或多种；导电碳材料包括但不限于碳纳米管、石墨烯、氧化石墨烯等其中一种或多种。
例如，阴极材料为Al、Ag或Mg/Ag，但是本公开的实施例并不限于此。
例如，阴极的厚度为约500nm-约1000nm。
例如，本公开实施例提供的量子点发光器件的结构可以为正置结构，也 可以为倒置结构。
下面通过示例实施例对本公开实施例提供的量子点发光器件为正置结构时的制备方法进行详细说明。例如，量子点发光器件中各膜层的制备方法包括但不限于旋涂法、蒸镀法、化学气相沉积法、物理气相沉积法、磁控溅射法等中的一种或多种。
清洗衬底基板10，采用蒸镀法在衬底基板10上蒸镀一层阳极20，如图7A所示。例如，衬底基板10可以为刚性衬底或柔性衬底。其中，刚性衬底包括但不限于玻璃等；柔性衬底包括但不限于聚对苯二甲酸乙二酯(PET)、聚萘二甲酸乙二醇酯(PEN)、聚酰亚胺(PI)、聚乙烯(PE)、聚氯乙烯(PV)等其中一种或多种。
采用旋涂法在阳极20上制备空穴注入层30，如图7B所示.例如，旋涂PEDOT：PSS空穴注入材料。
采用旋涂法在空穴注入层30上制备量子点发光层40，如图7C所示。例如，量子点发光层包括本公开实施例提供的如CdSe/ZnS/NiO量子点。
采用旋涂法在量子点发光层40上制备电子传输层50，如图7D所示。例如，电子传输层50的材料可以为ZnO或ZnMgO。
采用蒸镀法在电子传输层50上蒸镀一层阴极60，如图7E所示。阴极材料可采用Al等，厚度为约500nm-约1000nm。
在所述各膜层制备结束之后进行封装，完成本公开实施例中正置结构的量子点发光器件的制备。
本公开实施例所述制备得到的图7E所示的量子点发光器件为正置结构。也可以制备倒置结构的量子点发光器件，例如，倒置结构的量子点发光器件为在衬底基板10上依次形成阴极60、电子传输层50、量子点发光层40、空穴注入层30和阳极20，倒置结构的结构如图8所示。倒置结构的量子点发光器件的制备流程可以参见所述正置结构的量子点发光器件的制备方法，仅是各膜层的制备顺序发生改变，在此不再赘述。
本公开对量子点发光器件的发光类型不做限制，如不限于底出光或顶出光。例如，阳极和阴极中位于量子点发光器件出光一侧的电极为透明电极。
本公开实施例提供的量子点发光器件还包括本领域技术人员熟知的其它功能膜层，在此为不掩盖本申请的内容不做赘述。
基于同一构思，本公开的实施例还提供了一种显示面板，包括本公开实施例提供的所述量子点发光器件。该显示面板解决问题的原理与前述量子点发光器件相似，因此该显示面板的实施可以参见前述量子点发光器件的实施，在此不再赘述。
基于同一构思，本公开实施例还提供了一种显示装置，包括本公开实施例提供的所述显示面板。该显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。对于该显示装置的其它必不可少的组成部分均为本领域的普通技术人员应该理解和获得的，在此不做赘述。该显示装置解决问题的原理与前述量子点发光器件相似，因此该显示装置的实施可以参见前述量子点发光器件的实施，在此不再赘述。
本公开实施例提供了量子点及其制备方法、量子点发光器件、相关装置，该量子点包括内核结构和包围内核结构的壳层结构，壳层结构中最外侧壳层的材料为空穴传输材料。本公开实施例提供的核壳结构的量子点，由于该量子点的最外侧壳层为空穴传输材料，这样可以将该结构的量子点应用于QLED器件的制备中，一方面可以将该量子点的最外层空穴传输材料作为QLED器件中的空穴传输层，减少单独制作一层空穴传输层的工艺，有效简化器件结构与工艺制程；另一方面该量子点的最外层空穴传输材料与QLED器件中的电子传输层相接触，作为电子阻挡层，能够阻挡部分电子传输，解决相关技术中由于电子传输更为高效使电子在QLED器件中成为多子的问题，从而有效促进电子-空穴注入平衡，提高QLED器件的效率与寿命。
以下几点需要说明：
(1)本公开实施例附图只涉及到与本公开实施例涉及到的结构，其他结构可参考通常设计。
(2)在不冲突的情况下，本公开的实施例及实施例中的特征可以相互组合以得到新的实施例，而这些新的实施例都应属于本公开的范围。
以上所述，仅为本公开的示例实施例，本公开的保护范围并不局限于此，任何熟悉本技术领域的普通技术人员在本公开实施例揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本公开的保护范围之内。

Claims (18)

  1. 一种量子点，包括：内核结构和包围所述内核结构的壳层结构，其中，所述壳层结构中最外侧壳层包括空穴传输材料。
  2. 如权利要求1所述的量子点，其中，所述壳层结构还包括内侧壳层，所述内侧壳层位于所述最外侧壳层和所述内核结构之间。
  3. 如权利要求1或2所述的量子点，其中，所述内核结构的材料选自Ⅱ-Ⅵ族化合物、Ⅲ-Ⅴ族化合物、Ⅳ-Ⅵ族化合物和Ⅰ-Ⅳ-Ⅶ族化合物的至少之一。
  4. 如权利要求1-3任一项所述的量子点，其中，所述空穴传输层的材料为无机材料。
  5. 如权利要求1-4任一项所述的量子点，其中，所述空穴传输材料包括NiO x、WO x、MoO x、VO x和CrO x其中之一或其组合。
  6. 如权利要求1-5任一项所述的量子点，其中，所述最外侧壳层的厚度为约1nm-约100nm。
  7. 一种量子点发光器件，包括：
    衬底基板，以及依次设置在所述衬底基板上的阳极、空穴注入层、量子点发光层、电子传输层和阴极；或依次设置在所述衬底基板上的阴极，电子传输层，量子点发光层，空穴注入层和阳极；其中所述量子点发光层包括如权利要求1-6任一项所述的量子点。
  8. 如权利要求7所述的量子点发光器件，其中，所述空穴注入层和所述量子点发光层直接接触。
  9. 如权利要求7或8所述的量子点发光器件，其中，所述空穴注入层的材料包括PEDOT：PSS、CuPc、过渡金属氧化物、和金属硫系化合物其中之一或其组合。
  10. 如权利要求7-9任一项所述的量子点发光器件，其中，所述电子传输 层的材料为金属氧化物、金属复合氧化物或金属配位化合物。
  11. 一种显示面板，包括如权利要求7-10任一项所述的量子点发光器件。
  12. 一种显示装置，包括如权利要求11所述的显示面板。
  13. 一种如权利要求1-6任一项所述的量子点的制备方法，包括：
    提供一内核结构；
    形成包围所述内核结构的壳层结构；以及
    形成材料为空穴传输材料的最外侧壳层。
  14. 如权利要求13所述的制备方法，其中，所述形成包围所述内核结构的所述壳层结构包括：
    形成包围所述内核结构的所述内侧壳层；以及
    在所述内侧壳层外侧形成所述最外侧壳层。
  15. 如权利要求14所述的制备方法，其中，所述形成材料为空穴传输材料的所述最外侧壳层包括：
    在所述内核结构的外侧形成氧化物壳层；以及
    对所述氧化物壳层进行离子交换，形成材料为空穴传输材料的所述最外侧壳层。
  16. 如权利要求15所述的制备方法，其中，在所述内核结构外侧形成所述氧化物壳层包括：
    将所述内侧壳层部分氧化，在所述内侧壳层表面形成所述氧化物壳层。
  17. 如权利要求16所述的制备方法，其中，将所述内侧壳层部分氧化包括：
    向包括所述内侧壳层的量子点溶液中通入O 2或H 2O 2。
  18. 如权利要求15-17任一项所述的制备方法，其中，对所述氧化物壳层进行离子交换包括：
    在包括所述氧化物壳层的所述量子点溶液中通入阳离子交换试剂及配体，通过所述配体与所述阳离子间配位能力的强弱实现所述离子交换。
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Publication number Priority date Publication date Assignee Title
CN110085757A (zh) * 2019-05-22 2019-08-02 京东方科技集团股份有限公司 量子点及其制备方法、量子点发光器件、相关装置
CN113130796B (zh) * 2020-01-16 2022-11-25 京东方科技集团股份有限公司 Qled器件、空穴传输材料及其制作方法、显示装置
CN111584834B (zh) * 2020-04-20 2021-06-15 中国计量大学 一种金属氧化物量子点嵌入三维碳纳米材料的制备方法
CN111490166B (zh) * 2020-04-24 2023-07-04 电子科技大学 一种基于聚合物空穴传输层的柔性钙钛矿光电探测器及其制备方法
CN112271269B (zh) * 2020-10-23 2024-02-13 京东方科技集团股份有限公司 显示面板及其制造方法
WO2022120655A1 (zh) * 2020-12-09 2022-06-16 京东方科技集团股份有限公司 量子点、其制备方法、量子点发光器件及显示装置
CN113285040A (zh) * 2021-05-19 2021-08-20 北京京东方技术开发有限公司 有机电致发光器件、显示装置、量子点制备方法
CN115678537A (zh) * 2021-07-29 2023-02-03 北京京东方技术开发有限公司 量子点材料、发光器件、显示装置和制作方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102473800A (zh) * 2009-07-07 2012-05-23 佛罗里达大学研究基金会公司 稳定的且所有溶液可加工的量子点发光二极管
CN105794001A (zh) * 2013-12-06 2016-07-20 纳米技术有限公司 用于光伏吸收剂膜的核-壳纳米粒子
CN106299063A (zh) * 2016-09-22 2017-01-04 Tcl集团股份有限公司 一种掺杂的氧化锆薄膜、qled及制备方法
CN106356462A (zh) * 2016-08-23 2017-01-25 苏州星烁纳米科技有限公司 包括量子点和能量转移分子的发光二极管装置及其制备方法、显示装置
US20170271605A1 (en) * 2016-03-17 2017-09-21 Apple Inc. Quantum dot spacing for high efficiency quantum dot led displays
US20180019371A1 (en) * 2016-03-17 2018-01-18 Apple Inc. Quantum dot spacing for high efficiency quantum dot led displays
CN110085757A (zh) * 2019-05-22 2019-08-02 京东方科技集团股份有限公司 量子点及其制备方法、量子点发光器件、相关装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102473800A (zh) * 2009-07-07 2012-05-23 佛罗里达大学研究基金会公司 稳定的且所有溶液可加工的量子点发光二极管
CN105794001A (zh) * 2013-12-06 2016-07-20 纳米技术有限公司 用于光伏吸收剂膜的核-壳纳米粒子
US20170271605A1 (en) * 2016-03-17 2017-09-21 Apple Inc. Quantum dot spacing for high efficiency quantum dot led displays
US20180019371A1 (en) * 2016-03-17 2018-01-18 Apple Inc. Quantum dot spacing for high efficiency quantum dot led displays
CN106356462A (zh) * 2016-08-23 2017-01-25 苏州星烁纳米科技有限公司 包括量子点和能量转移分子的发光二极管装置及其制备方法、显示装置
CN106299063A (zh) * 2016-09-22 2017-01-04 Tcl集团股份有限公司 一种掺杂的氧化锆薄膜、qled及制备方法
CN110085757A (zh) * 2019-05-22 2019-08-02 京东方科技集团股份有限公司 量子点及其制备方法、量子点发光器件、相关装置

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