WO2020233277A1 - Oled显示面板及显示装置 - Google Patents

Oled显示面板及显示装置 Download PDF

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Publication number
WO2020233277A1
WO2020233277A1 PCT/CN2020/084344 CN2020084344W WO2020233277A1 WO 2020233277 A1 WO2020233277 A1 WO 2020233277A1 CN 2020084344 W CN2020084344 W CN 2020084344W WO 2020233277 A1 WO2020233277 A1 WO 2020233277A1
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Prior art keywords
light
emitting
emitting area
color
display panel
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PCT/CN2020/084344
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English (en)
French (fr)
Inventor
郝学光
乔勇
吴新银
程鸿飞
Original Assignee
京东方科技集团股份有限公司
北京京东方技术开发有限公司
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Application filed by 京东方科技集团股份有限公司, 北京京东方技术开发有限公司 filed Critical 京东方科技集团股份有限公司
Priority to AU2020279136A priority Critical patent/AU2020279136B2/en
Priority to US17/052,092 priority patent/US20230096411A1/en
Priority to KR1020207027813A priority patent/KR102416757B1/ko
Priority to JP2020550777A priority patent/JP2022533279A/ja
Priority to RU2020139882A priority patent/RU2765350C1/ru
Priority to BR112020024698-0A priority patent/BR112020024698A2/pt
Priority to MX2020013215A priority patent/MX2020013215A/es
Publication of WO2020233277A1 publication Critical patent/WO2020233277A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission

Definitions

  • the present disclosure relates to the field of display technology, and in particular to an OLED display panel and a display device.
  • OLED display panels have the problem of light leakage.
  • B light There is a certain amount of light leakage between the area and the G light-emitting area, and between the G light-emitting area and the R light-emitting area. How to solve these light leakage problems has always been a technical problem to be solved in this field.
  • the embodiment of the present disclosure provides an OLED display panel, including:
  • a plurality of light-emitting areas located on the substrate and arranged in an array
  • a photoresist structure is located on the substrate and between the light-emitting regions, and the photoresist structure is configured to prevent the light emitted from adjacent light-emitting regions from being reflected between the light-emitting regions. Eject from the substrate side.
  • each of the light-emitting regions includes a color film and a light-emitting structure sequentially located on the substrate;
  • the photoresist structure includes color resists located between the color films of adjacent light-emitting regions, and the color resists are configured to absorb light emitted from the adjacent light-emitting regions.
  • the color resist and the adjacent light-emitting area have different colors.
  • two adjacent light-emitting areas are respectively a first light-emitting area and a second light-emitting area;
  • the photoresist structure includes The first color resistor and the second color resistor between the second light-emitting area and the color film of the first light-emitting area have the same color and are prepared in the same layer.
  • the color film of the second light-emitting area has the same color and is prepared in the same layer.
  • the first color resist and the second color resist are arranged in a layered manner.
  • the first color resist is located between the second color resist and the color film of the second light-emitting area; the second color resist is located Between the first color resistor and the color film of the first light-emitting area.
  • each of the light-emitting regions further includes a source-drain electrode layer located between the substrate and the color filter, and the source-drain electrode layer includes Data line
  • the data lines of the first light-emitting area and the second light-emitting area are parallel and adjacent to each other; the boundary line of the first color resistor and the second color resistor is distanced from the data line of the first light-emitting area and the The pitches of the data lines in the second light-emitting area are equal.
  • each of the light-emitting regions includes a source and drain electrode layer and a light-emitting structure sequentially located on the substrate;
  • the photoresist structure includes a black light-absorbing structure located between the source and drain electrode layers of adjacent light-emitting regions.
  • the source and drain electrode layers include data lines
  • the black light-absorbing structure includes The light absorption part between the data line of the third light-emitting area and the data line of the fourth light-emitting area.
  • the photoresist structure includes a pixel defining structure located between the light-emitting regions, and the pixel defining structure is a light-absorbing material.
  • each of the light-emitting regions includes an anode, a light-emitting layer, and a cathode sequentially located on the substrate; the cathodes of the multiple light-emitting regions constitute a common Whole electrode layer;
  • the photoresist structure includes a first opening located in the entire electrode layer, and the first opening is located at a position opposite to a portion between adjacent light-emitting regions.
  • the OLED display panel further includes a pixel defining structure located between the light-emitting regions;
  • the photoresist structure further includes a second opening located in the pixel defining structure, and the projection of the second opening on the substrate covers the projection of the first opening on the substrate.
  • each of the light-emitting regions further includes a source-drain electrode layer located between the substrate and the anode, and the source-drain electrode layer includes a data line;
  • two adjacent light-emitting areas are a fifth light-emitting area and a sixth light-emitting area, and the data lines of the fifth light-emitting area and the sixth light-emitting area are parallel to and adjacent to each other;
  • the first opening is arranged between the sixth light-emitting area and the sixth light-emitting area, and the width of the first opening is larger than the distance between the data line of the fifth light-emitting area and the data line of the sixth light-emitting area.
  • An embodiment of the present disclosure also provides a display device, including the OLED display panel described in any one of the above.
  • FIG. 1 is a schematic diagram of a partial top view of an OLED display panel provided by an embodiment of the disclosure
  • FIG. 2 is a schematic diagram of a partial cross-sectional structure between two light-emitting regions of an OLED display panel in the related art
  • FIG. 3 is a schematic diagram of a partial cross-sectional structure of an OLED display panel provided by an embodiment of the present disclosure
  • FIG. 4 is a schematic diagram of a partial cross-sectional structure of an OLED display panel provided by another embodiment of the present disclosure.
  • FIG. 5 is a schematic diagram of a partial cross-sectional structure of an OLED display panel provided by another embodiment of the present disclosure.
  • FIG. 6 is a schematic diagram of a partial cross-sectional structure of an OLED display panel provided by another embodiment of the present disclosure.
  • FIG. 7 is a schematic diagram of a partial cross-sectional structure of an OLED display panel provided by another embodiment of the present disclosure.
  • FIG. 8 is a schematic diagram of a partial cross-sectional structure of an OLED display panel provided by another embodiment of the present disclosure.
  • an embodiment of the present disclosure provides an OLED display panel, which includes a substrate 1 and a plurality of light-emitting regions 2 arranged in an array, and a photoresist structure located between the light-emitting regions 2
  • a photoresist structure located between the light-emitting regions 2
  • the photoresist structure is configured to prevent the light emitted from the light emitting regions 2 from being reflected from the side of the substrate 1 between the light emitting regions 2.
  • the above-mentioned OLED display panel uses the substrate 1 side as the display light side, and a photoresist structure is provided between the light emitting regions 2.
  • the photoresist structure can prevent the light emitted from the light emitting region 2 from being reflected from between the light emitting regions 2.
  • the substrate 1 emits light from one side, thereby avoiding light leakage of the OLED display panel and improving the display effect of the OLED display panel.
  • each light-emitting area 2 may include a source and drain electrode layer (metal layer) and a color
  • the B light-emitting area 2 includes a source and drain electrode layer, a white light OLED light-emitting structure 32 and a blue color film 31
  • the G light-emitting area 2 includes Source and drain electrode layers, white light OLED light emitting structure 32 and green color film 312.
  • the light emitted by the light-emitting structure 32 of the B light-emitting area 2 is converted into blue light R1 through the blue color film 31.
  • the blue light R1 is reflected by the source and drain electrode layers and easily enters between the two pixels of the BG and is passed through the cathode 323 layer. It is reflected on the substrate 1 to exit.
  • the green light R2 emitted from the G light-emitting area 2 is also easily reflected on the substrate 1 between the two pixels of B-G to be emitted. Based on the above situation, the light leakage problem will occur.
  • the photoresist structure may include a color resist 41 located between the color films 31 of adjacent light-emitting areas 2. 41 is configured to absorb the emitted light of the adjacent light emitting region 2.
  • the color resistance may be different from the color film of the adjacent light-emitting area.
  • the light emitted from the light-emitting area 2 is reflected by the source and drain electrode layers to the adjacent When the light-emitting areas 2 are between, they will pass through the color resist 41 and be absorbed by the color resist 41, thereby avoiding light leakage.
  • two adjacent light-emitting regions 2 are respectively a first light-emitting region 21 and a second light-emitting region 22;
  • the photoresist structure may include The first color resist 411 and the second color resist 412 between 21 and the second light-emitting area 22, the first color resist 411 and the color film 31 of the first light-emitting area 21 have the same color and are prepared in the same layer, and the second color resist 412 and The color film 31 of the second light-emitting area 22 has the same color and is prepared in the same layer.
  • the first color resist 411 is the same color as the color film 31 of the first light-emitting area 21, and the second color resist 412 is the same color as the color film 31 of the second light-emitting area 22; further, the light emitted from the first light-emitting area 21 passes through When the second color resistor 412 is absorbed, the light emitted from the second light-emitting area 22 is absorbed when passing through the first color resistor 411. Therefore, the emitted light from the adjacent first light-emitting area 21 and second light-emitting area 22 will be absorbed between the first light-emitting area 21 and the second light-emitting area 22 (as shown in FIG. 3 and FIG.
  • the first color resistor 411 and the second color resistor 412 are prepared in the same layer as the first light-emitting area 21 and the second light-emitting area 22, so no additional
  • the process steps and the preparation process are very simple.
  • the first color resistor 411 and the second color resistor 412 may be arranged in layers.
  • the first color resistor 411 and the second color resistor 412 may also be provided in the same layer.
  • the first color resistor 411 is located between the second color resistor 412 and the color film 31 of the second light-emitting area 22
  • the second color resistor 412 is located between the first color resistor 411 and the color film 31 of the first light-emitting area 21 .
  • the light of the first light-emitting area 21 can reach the adjacent second color resistor 412 after being reflected by the source and drain electrode layers, and be absorbed by the second color resistor 412; the light of the second light-emitting area 22 is reflected by the source and drain electrode layers It can reach the adjacent first color resist 411 and be absorbed by the first color resist 411.
  • This arrangement can not only avoid light leakage between adjacent pixels, but also avoid the overlap of color resist layers between pixels to cause a step difference, and can ensure the uniformity of the color film process.
  • the size of the first color resistor 411 and the second color resistor 412 may be substantially the same.
  • the first light-emitting area 21 and the second light-emitting area 22 are adjacent in the row direction (the extending direction of the gate line 34). And the data lines 33 of the first light-emitting area 21 and the second light-emitting area 22 are arranged parallel and adjacent to each other as an example.
  • the OLED display panel of the present disclosure adopts RGBW pixel arrangement as an example, as shown in FIG. 1, at this time, the first light-emitting area 21 and the second light-emitting area 22 can be R light-emitting area and G light-emitting area, or G light-emitting area and B light-emitting area.
  • the photoresist structure may include a black light-absorbing structure located between the source and drain electrode layers of adjacent light-emitting regions 2. Specifically, when the light emitted from the light-emitting area is reflected toward the substrate between the adjacent light-emitting areas, it will pass through the black light-absorbing structure and be absorbed, so that light leakage can be avoided.
  • the black light-absorbing structure may include The light absorption portion 42 between the data line 33 of the third light-emitting area 23 and the data line 33 of the fourth light-emitting area 24.
  • the light from the third light-emitting area 23 is reflected by the data line 33 to reach the cathode 323, and after being reflected by the cathode 323, it can reach the light absorption part 42 to be absorbed; in the same way, the light from the fourth light-emitting area 24 can reach the cathode after being reflected by the cathode 323.
  • the light absorption portion 42 is thereby absorbed. Therefore, the emitted light from the adjacent third light-emitting area 23 and the fourth light-emitting area 24 will be absorbed between the third light-emitting area 23 and the fourth light-emitting area 24, thereby avoiding light leakage.
  • the area 24 may be an R light-emitting area and a G light-emitting area, or a G light-emitting area and a B light-emitting area, and also may be a B light-emitting area and a W light-emitting area, or a W light-emitting area and an R light-emitting area.
  • the photoresist structure may include a pixel defining structure 43 located between the light-emitting regions 2, and the pixel defining structure 43 is a light-absorbing material, for example, It can be black light-absorbing material.
  • the pixel defining structure 43 is a light-absorbing material, for example, It can be black light-absorbing material.
  • the light emitted from the light-emitting area 2 reaches the pixel defining structure 43 through the reflection of the source and drain electrode layers, it will be absorbed by the pixel defining structure 43, and thus will not be reflected to the side of the substrate 1 (as shown by the arrow in FIG.
  • the dotted line indicates that there is no light transmission, that is, the light has been absorbed), so that light leakage can be avoided.
  • the OLED display panel of the present disclosure adopts an RGBW pixel arrangement as an example, as shown in FIG. 1.
  • the photoresist structure may include the entire pixel defining layer It can also only include at least part of the pixel defining structure between the R light-emitting area and the G light-emitting area, between the G light-emitting area and the B light-emitting area, between the B light-emitting area and the W light-emitting area, and between the W light-emitting area and the R light-emitting area ; That is, the entire pixel defining layer may use black light-absorbing material, or the pixel defining structure between some pixels may be black light-absorbing material.
  • the light-emitting structure 32 of each light-emitting region 2 may include an anode 321 and a light-emitting layer 322 which are sequentially located on the substrate 1.
  • the cathode 323; the cathodes 323 of a plurality of light-emitting regions 2 constitute a common entire electrode layer 323.
  • the photoresist structure may include a first opening 44 located on the entire electrode layer 323. The first opening 44 is located at a position opposite to the portion between the adjacent light-emitting regions 2, that is, the cathode 323 layer is adjacent to the Hollowed out parts are provided on the parts between the light-emitting areas 2 of.
  • the light emitted from the light-emitting area 2 reaches the first opening 44 of the cathode 323 layer through the reflection of the source and drain electrode layers, it will directly exit the first opening 44 without being reflected to the side of the substrate 1 (as shown in FIG.
  • the dotted lines with arrows in 7 and 8 indicate that there is no light transmission, that is, the light has been absorbed), so that the light can be prevented from exiting from the side of the substrate 1 and light leakage can be avoided.
  • the photoresist structure may further include a second opening 45 located on the pixel defining structure 43, and the second opening 45 is on the substrate 1.
  • the projection of covers the projection of the first opening 44 on the substrate 1.
  • the position of the second opening 45 corresponds to the position of the first opening 44, and the size of the second opening 45 may be greater than or equal to the first opening 44.
  • the second opening 44 on the pixel defining structure 43 can prevent light from being reflected to the side of the substrate 1 by the pixel defining structure 43, thereby further avoiding light leakage.
  • each light-emitting area 2 includes a source-drain electrode layer located between the substrate 1 and the anode 321, and the source-drain electrode layer includes a data line 33; as shown in FIG. , Figures 7 and 8, suppose that two adjacent light-emitting areas 2 are the fifth light-emitting area 25 and the sixth light-emitting area 26, respectively, the fifth light-emitting area 25 and the sixth light-emitting area 26 along the row direction (gate line 34 Extension direction) adjacent, and the data lines 33 of the fifth light-emitting area 25 and the sixth light-emitting area 26 are parallel and adjacent; at a position opposite to the position between the fifth light-emitting area 25 and the sixth light-emitting area 26
  • the first opening 44 the width L1 of the first opening 44 is greater than the distance L2 between the data line 33 of the fifth light-emitting area 25 and the data line 33 of the sixth light-emitting area 26, which can better prevent the fifth light-emitting
  • the fifth light-emitting area 25 and the sixth light-emitting area may be an R light-emitting area and a G light-emitting area, or a G light-emitting area and a B light-emitting area, and also may be a B light-emitting area and a W light-emitting area, or a W light-emitting area and an R light-emitting area.
  • the OLED display panel of the present disclosure uses the substrate side as the display light side, and is a bottom-emission OLED; exemplary, the OLED display panel can be either RGBW pixel arrangement or RGB pixel arrangement; and The OLED display panel can be either a white light OLED+color film display scheme, or a monochrome OLED display scheme (red light OLED+green light OLED+blue OLED); the form of the OLED display panel is not limited in this disclosure.
  • the photoresist structure in the embodiment provided by the present disclosure may include the color resist 41 in FIGS. 3 and 4, the light absorbing part 42 in FIG. 5, the pixel defining structure 43 in FIG. 6, and FIGS. 7 and 8.
  • One or more of the structures such as the first opening 44 and the second opening 45 in the embodiment of the present disclosure is only an exemplary description of the photoresist structure, and not all the embodiments of the present disclosure.
  • the structures configured to prevent the light emitted from the light-emitting regions from being reflected from the side of the substrate between the light-emitting regions fall within the protection scope of the photoresist structure in the present disclosure.
  • embodiments of the present disclosure also provide a display device, which includes any of the above-mentioned OLED display panels.
  • the display device can be applied to any products or components with display functions such as mobile phones, tablet computers, televisions, monitors, notebook computers, digital photo frames, and navigators. Since the principle of solving the problems of the display device is similar to that of the above-mentioned display panel, the implementation of the display device can refer to the implementation of the above-mentioned display panel, and the repetition will not be repeated.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

本公开涉及显示技术领域，公开一种OLED显示面板及显示装置。其中，OLED显示面板，包括衬底和阵列排布的多个发光区域，以及位于所述发光区域之间的光阻结构，所述光阻结构被配置为阻止发光区域的出射光被反射后从所述发光区域之间的衬底一侧出射。上述OLED显示面板，以衬底一侧为显示出光侧，在发光区域之间设有光阻结构，该光阻结构可以阻止发光区域的出射光被反射后从所述发光区域之间的衬底一侧出射，从而可以避免OLED显示面板漏光，改善OLED显示面板的显示效果。

Description

OLED显示面板及显示装置
相关申请的交叉引用
本公开要求在2019年05月17日提交中国专利局、申请号为201920716235.9、申请名称为“一种OLED显示面板及显示装置”的中国专利申请的优先权，其全部内容通过引用结合在本公开中。
技术领域
本公开涉及显示技术领域，特别涉及一种OLED显示面板及显示装置。
背景技术
目前，OLED显示面板大多存在漏光的问题，例如，相关设计中，采用RGBW像素排列方式的OLED显示面板中，R发光区域与W发光区域之间，W发光区域与B发光区域之间，B发光区域与G发光区域之间，G发光区域与R发光区域之间，都存在一定的漏光情况，如何解决这些漏光问题一直是该领域需要解决的技术难题。
发明内容
本公开实施例提供了一种OLED显示面板，包括：
衬底；
多个发光区域，位于所述衬底之上且呈阵列排布；
光阻结构，位于所述衬底之上且位于所述发光区域之间，所述光阻结构被配置为阻止相邻的所述发光区域的出射光被反射后从所述发光区域之间的衬底一侧出射。
可选地，在本公开实施例提供的上述OLED显示面板中，每个所述发光区域包括依次位于所述衬底上的彩膜和发光结构；
所述光阻结构包括位于相邻的发光区域的彩膜之间的色阻，所述色阻被 配置为吸收所述相邻的发光区域的出射光。
可选地，在本公开实施例提供的上述OLED显示面板中，所述色阻与相邻的发光区域的彩膜颜色均不同。
可选地，在本公开实施例提供的上述OLED显示面板中，设相邻的两个发光区域分别为第一发光区域和第二发光区域；所述光阻结构包括位于所述第一发光区域和所述第二发光区域之间的第一色阻和第二色阻，所述第一色阻与所述第一发光区域的彩膜颜色相同且同层制备，所述第二色阻与所述第二发光区域的彩膜颜色相同且同层制备。
可选地，在本公开实施例提供的上述OLED显示面板中，所述第一色阻和所述第二色阻层叠设置。
可选地，在本公开实施例提供的上述OLED显示面板中，所述第一色阻位于所述第二色阻与所述第二发光区域的彩膜之间；所述第二色阻位于所述第一色阻与所述第一发光区域的彩膜之间。
可选地，在本公开实施例提供的上述OLED显示面板中，每个所述发光区域还包括位于所述衬底和所述彩膜之间的源漏电极层，所述源漏电极层包括数据线；
所述第一发光区域和所述第二发光区域的数据线相互平行且相邻；所述第一色阻和所述第二色阻的分界线距离所述第一发光区域的数据线和所述第二发光区域的数据线的间距相等。
可选地，在本公开实施例提供的上述OLED显示面板中，每个所述发光区域包括依次位于所述衬底上的源漏电极层和发光结构；
所述光阻结构包括位于相邻的发光区域的源漏电极层之间的黑色吸光结构。
可选地，在本公开实施例提供的上述OLED显示面板中，所述源漏电极层包括数据线；
设相邻的两个发光区域分别为第三发光区域和第四发光区域，所述第三发光区域和所述第四发光区域的数据线相互平行且相邻；所述黑色吸光结构 包括位于所述第三发光区域的数据线和所述第四发光区域的数据线之间的吸光部。
可选地，在本公开实施例提供的上述OLED显示面板中，所述光阻结构包括位于所述发光区域之间的像素界定结构，所述像素界定结构为吸光材料。
可选地，在本公开实施例提供的上述OLED显示面板中，每个所述发光区域包括依次位于所述衬底上的阳极、发光层和阴极；所述多个发光区域的阴极构成共用的整层电极层；
所述光阻结构包括位于所述整层电极层内的第一开口，所述第一开口位于与相邻的发光区域之间的部位相对的位置上。
可选地，所述OLED显示面板还包括位于所述发光区域之间的像素界定结构；
所述光阻结构还包括位于所述像素界定结构内的第二开口，所述第二开口在衬底上的投影覆盖所述第一开口在衬底上的投影。
可选地，每个所述发光区域还包括位于所述衬底和所述阳极之间的源漏电极层，所述源漏电极层包括数据线；
设相邻的两个发光区域分别为第五发光区域和第六发光区域，所述第五发光区域和所述第六发光区域的数据线相互平行且相邻；在与所述第五发光区域和所述第六发光区域之间具有所述第一开口，所述第一开口的宽度大于所述第五发光区域的数据线和所述第六发光区域的数据线之间的间距。
本公开实施例还提供了一种显示装置，包括上述任一项所述的OLED显示面板。
附图说明
图1为本公开实施例提供的一种OLED显示面板的部分俯视结构示意图；
图2为相关技术中OLED显示面板的两个发光区域之间的部分剖面结构示意图；
图3为本公开一实施例提供的一种OLED显示面板的部分剖面结构示意 图；
图4为本公开另一实施例提供的一种OLED显示面板的部分剖面结构示意图；
图5为本公开另一实施例提供的一种OLED显示面板的部分剖面结构示意图；
图6为本公开另一实施例提供的一种OLED显示面板的部分剖面结构示意图；
图7为本公开另一实施例提供的一种OLED显示面板的部分剖面结构示意图；
图8为本公开另一实施例提供的一种OLED显示面板的部分剖面结构示意图。
具体实施方式
下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。
如图1、图3至图8所示，本公开实施例提供了一种OLED显示面板，包括衬底1和阵列排布的多个发光区域2，以及位于发光区域2之间的光阻结构，例如，图3和图4中的色阻41、图5中的吸光部42、图6中的像素界定结构43、图7和图8中的第一开口44和第二开口45；具体地，该光阻结构被配置为阻止发光区域2的出射光被反射后从发光区域2之间的衬底1一侧出射。
上述OLED显示面板，以衬底1一侧为显示出光侧，在发光区域2之间设有光阻结构，该光阻结构可以阻止发光区域2的出射光被反射后从发光区域2之间的衬底1一侧出射，从而可以避免OLED显示面板漏光，改善OLED显示面板的显示效果。
可选地，在本公开提供的一种具体地实施例中，如图3至图8所示，每个发光区域2可以包括依次位于衬底1上的源漏电极层(金属层)、彩膜31和白光OLED发光结构32；源漏电极层(金属层)可以包括数据线33、源漏电极等结构；OLED发光结构32可以包括阴极323、发光层(EL层)322、阳极321。
在相关技术中，如图2所示，以相邻的B-G两个发光区域2为例，B发光区域2包括源漏电极层、白光OLED发光结构32和蓝色彩膜311，G发光区域2包括源漏电极层、白光OLED发光结构32和绿色彩膜312。具体地，以B发光区域2的发光结构32发出的光，经过蓝色彩膜31转化为蓝光R1，蓝光R1经过源漏电极层的反射很容易进入B-G两个像素之间、并被阴极323层反射到衬底1上从而出射。同理，G发光区域2出射的绿光R2也容易被反射至B-G两个像素之间的衬底1上从而出射，基于上述情况，就会导致漏光问题的出现。
可选地，在本公开提供的一种具体的实施方式中，如图3和图4所示，光阻结构可以包括位于相邻发光区域2的彩膜31之间的色阻41，色阻41被配置为吸收相邻的发光区域2的出射光。
示例性的，在本公开提供的一种具体的实施方式中，色阻可以与相邻的发光区域的彩膜颜色均不同，当发光区域2的出射光线被源漏电极层反射至相邻的发光区域2之间时，会经过色阻41并被色阻41所吸收，从而可以避免出现漏光现象。
示例性的，在本公开提供的一种具体的实施方式中，设相邻的两个发光区域2分别为第一发光区域21和第二发光区域22；光阻结构可以包括位于第一发光区域21和第二发光区域22之间的第一色阻411和第二色阻412，第一色阻411与第一发光区域21的彩膜31颜色相同且同层制备，第二色阻412与第二发光区域22的彩膜31颜色相同且同层制备。
具体地，第一色阻411与第一发光区域21的彩膜31颜色相同，第二色阻412与第二发光区域22的彩膜31颜色相同；进而，第一发光区域21的出 射光经过第二色阻412时会被吸收，第二发光区域22的出射光经过第一色阻411时会被吸收。从而，相邻的第一发光区域21和第二发光区域22的出射光线都会在第一发光区域21和第二发光区域22之间被吸收(如图3和图4中带箭头的虚线表示无光线传输，即光线被吸收)，从而可以避免出现漏光现象；并且，第一色阻411和第二色阻412分别与第一发光区域21和第二发光区域22同层制备，因此无需增加额外的工艺步骤，制备过程非常简单。
可选地，在本公开提供的一种具体的实施方式中，如图3所示，第一色阻411和第二色阻412可以层叠设置。
可选地，在本公开提供的一种具体的实施方式中，如图4所示，第一色阻411和第二色阻412也可以同层设置。此时，第一色阻411位于第二色阻412与第二发光区域22的彩膜31之间，第二色阻412位于第一色阻411与第一发光区域21的彩膜31之间。第一发光区域21的光线被源漏电极层反射后可以到达与其相邻的第二色阻412上，并被第二色阻412吸收；第二发光区域22的光线被源漏电极层反射后可以到达与其相邻的第一色阻411上，并被第一色阻411吸收。该设置方式，既可以避免相邻像素之间的漏光，同时可以避免像素间色阻层交叠而导致出现段差，可以保证彩膜工艺的均匀性。
具体地，在本公开提供的一种具体的实施方式中，第一色阻411和第二色阻412的尺寸可以大致相同。
示例性的，在本公开提供的一种具体的实施方式中，如图1和图4所示，以第一发光区域21和第二发光区域22沿行方向上(栅线34延伸方向)相邻、且第一发光区域21和第二发光区域22的数据线33平行且相邻设置为例，此时，第一色阻411和第二色阻412可以位于第一发光区域21的数据线33和第二发光区域22的数据线33之间、且可以覆盖数据线33并与相邻像素内的彩膜31相连；并且，第一色阻411和第二色阻412的分界线S与第一发光区域21的数据线33之间的间距d1和与第二发光区域22的数据线33之间的间距d2相等，即d1＝d2。
具体地，在本公开提供的一种具体的实施方式中，以本公开的OLED显 示面板采用RGBW像素排列方式为例，如图1所示，此时，第一发光区域21和第二发光区域22可以是R发光区域与G发光区域，也可以是G发光区域与B发光区域。
可选地，在本公开提供的一种具体的实施方式中，光阻结构可以包括位于相邻的发光区域2的源漏电极层之间的黑色吸光结构。具体地，当发光区域的出射光线朝向相邻的发光区域之间的衬底反射时，会经过黑色吸光结构并被吸收，从而可以避免出现漏光现象。
示例性的，在本公开提供的一种具体的实施方式中，如图1和图5所示，设相邻的两个发光区域2分别为第三发光区域23和第四发光区域24，第三发光区域23和第四发光区域24沿行方向上(栅线34延伸方向)相邻、且第三发光区域23和第四发光区域24的数据线33平行且相邻；黑色吸光结构可以包括位于第三发光区域23的数据线33和第四发光区域24的数据线33之间的吸光部42。具体地，第三发光区域23的光线经过数据线33反射到达阴极323，经过阴极323反射后可以到达吸光部42从而被吸收；同理，第四发光区域24的光线经过阴极323反射后可以到达吸光部42从而被吸收。从而，相邻的第三发光区域23和第四发光区域24的出射光线都会在第三发光区域23和第四发光区域24之间被吸收，从而可以避免出现漏光现象。
示例性的，在本公开提供的一种具体的实施方式中，以本公开的OLED显示面板采用RGBW像素排列方式为例，如图1所示，此时，第三发光区域23和第四发光区域24可以是R发光区域与G发光区域，也可以是G发光区域与B发光区域，同样还可以是B发光区域与W发光区域、或者W发光区域与R发光区域。
可选地，在本公提供的一种具体的实施方式中，如图6所示，光阻结构可以包括位于发光区域2之间的像素界定结构43，像素界定结构43为吸光材料，例如，可以为黑色吸光材料。具体地，当发光区域2的出射光线经过源漏电极层反射到达像素界定结构43时，会被像素界定结构43吸收，从而不会被反射到衬底1一侧(如图6中带箭头的虚线表示无光线传输，即光线已 被吸收)，从而可以避免出现漏光现象。
示例性的，在本公开提供的一种具体的实施方式中，以本公开的OLED显示面板采用RGBW像素排列方式为例，如图1所示，此时，光阻结构可以包括整个像素界定层，也可以只包括R发光区域与G发光区域之间、G发光区域与B发光区域之间、B发光区域与W发光区域之间、W发光区域与R发光区域之间的至少部分像素界定结构；即，可以整个像素界定层均采用黑色吸光材料，也可以是部分像素之间的像素界定结构为黑色吸光材料。
可选地，在本公开提供的一种具体的实施方式中，如图7和图8所示，每个发光区域2的发光结构32可以包括依次位于衬底1上的阳极321、发光层322和阴极323；多个发光区域2的阴极323构成共用的整层电极层323。示例性的，光阻结构可以包括位于整层电极层323上的第一开口44，第一开口44位于与相邻的发光区域2之间的部位相对的位置上，即阴极323层在相邻的发光区域2之间的部位上设有镂空的部位。具体地，当发光区域2的出射光线经过源漏电极层反射到达阴极323层的第一开口44时，将直接从第一开口44出射，而不会被反射到衬底1一侧(如图7和图8中带箭头的虚线表示无光线传输，即光线已被吸收)，从而可以阻止光线从衬底1一侧出射，避免出现漏光现象。
示例性的，在本公开提供的一种具体的实施方式中，如图8所示，光阻结构还可以包括位于像素界定结构43上的第二开口45，第二开口45在衬底1上的投影覆盖第一开口44在衬底1上的投影。具体地，第二开口45与第一开口44的位置对应、且第二开口45的尺寸可以大于或等于第一开口44。像素界定结构43上的第二开口44可以避免光线被像素界定结构43反射到衬底1一侧，从而可以进一步避免出现漏光现象。
示例性的，在本公开提供的一种具体的实施方式中，每个发光区域2包括位于衬底1和阳极321之间的源漏电极层，源漏电极层包括数据线33；如图1、图7和图8所示，设相邻的两个发光区域2分别为第五发光区域25和第六发光区域26，第五发光区域25和第六发光区域26沿行方向上(栅线34 延伸方向)相邻、且第五发光区域25和第六发光区域26的数据线33平行且相邻；在与第五发光区域25和第六发光区域26之间的部位相对的位置上设有第一开口44；第一开口44的宽度L1大于第五发光区域25的数据线33和第六发光区域26的数据线33之间的间距L2，可以更好的预防第五发光区域25和第六发光区域26之间的漏光与混光。
示例性的，在本公开提供的一种具体的实施方式中，以本公开的OLED显示面板采用RGBW像素排列方式为例，如图1所示，此时，第五发光区域25和第六发光区域26可以是R发光区域与G发光区域，也可以是G发光区域与B发光区域，同样还可以是B发光区域与W发光区域、或者W发光区域与R发光区域。
具体地，本公开的OLED显示面板以衬底一侧为显示出光侧，为底发射型OLED；示例性的，该OLED显示面板既可以是RGBW像素排列方式，也可以是RGB像素排列方式；并且，该OLED显示面板既可以是白光OLED+彩膜的显示方案，也可以是单色OLED发光(红光OLED+绿光OLED+蓝光OLED)的显示方案；本公开中对于OLED显示面板的形式不做限定。
另外，在本公开提供的实施例中的光阻结构，可以包括图3和图4中的色阻41、图5中的吸光部42、图6中的像素界定结构43、图7和图8中的第一开口44和第二开口45等结构中的一种或几种，本公开实施例中仅是对光阻结构作出示例性的说明，并不是本公开的全部实施例，实际上，被配置为阻止发光区域的出射光被反射后从发光区域之间的衬底一侧出射的结构，都属于本公开中的光阻结构所保护的范围。
基于同一发明构思，本公开实施例还提供了一种显示装置，该显示装置包括上述任一项的OLED显示面板。该显示装置可以应用于手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。由于该显示装置解决问题的原理与上述显示面板相似，因此该显示装置的实施可以参见上述显示面板的实施，重复之处不再赘述。
显然，本领域的技术人员可以对本公开实施例进行各种改动和变型而不 脱离本公开的精神和范围。这样，倘若本公开的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包含这些改动和变型在内。

Claims (14)

  1. 一种OLED显示面板，其中，包括：
    衬底；
    多个发光区域，位于所述衬底之上且呈阵列排布；
    光阻结构，位于所述衬底之上且位于所述发光区域之间，所述光阻结构被配置为阻止相邻的所述发光区域的出射光被反射后从所述发光区域之间的衬底一侧出射。
  2. 如权利要求1所述的OLED显示面板，其中，每个所述发光区域包括依次位于所述衬底上的彩膜和发光结构；
    所述光阻结构包括位于相邻的发光区域的彩膜之间的色阻，所述色阻被配置为吸收所述相邻的发光区域的出射光。
  3. 如权利要求2所述的OLED显示面板，其中，所述色阻与相邻的发光区域的彩膜颜色均不同。
  4. 如权利要求2所述的OLED显示面板，其中，设相邻的两个发光区域分别为第一发光区域和第二发光区域；所述光阻结构包括位于所述第一发光区域和所述第二发光区域之间的第一色阻和第二色阻，所述第一色阻与所述第一发光区域的彩膜颜色相同且同层制备，所述第二色阻与所述第二发光区域的彩膜颜色相同且同层制备。
  5. 如权利要求4所述的OLED显示面板，其中，所述第一色阻和所述第二色阻层叠设置。
  6. 如权利要求4所述的OLED显示面板，其中，所述第一色阻位于所述第二色阻与所述第二发光区域的彩膜之间；所述第二色阻位于所述第一色阻与所述第一发光区域的彩膜之间。
  7. 如权利要求6所述的OLED显示面板，其中，每个所述发光区域还包括位于所述衬底和所述彩膜之间的源漏电极层，所述源漏电极层包括数据线；
    所述第一发光区域和所述第二发光区域的数据线相互平行且相邻；所述第一色阻和所述第二色阻的分界线距离所述第一发光区域的数据线和所述第二发光区域的数据线的间距相等。
  8. 如权利要求1所述的OLED显示面板，其中，每个所述发光区域包括依次位于所述衬底上的源漏电极层和发光结构；
    所述光阻结构包括位于相邻的发光区域的源漏电极层之间的黑色吸光结构。
  9. 如权利要求8所述的OLED显示面板，其中，所述源漏电极层包括数据线；
    设相邻的两个发光区域分别为第三发光区域和第四发光区域，所述第三发光区域和所述第四发光区域的数据线相互平行且相邻；所述黑色吸光结构包括位于所述第三发光区域的数据线和所述第四发光区域的数据线之间的吸光部。
  10. 如权利要求1所述的OLED显示面板，其中，所述光阻结构包括位于所述发光区域之间的像素界定结构，所述像素界定结构为吸光材料。
  11. 如权利要求1所述的OLED显示面板，其中，每个所述发光区域包括依次位于所述衬底上的阳极、发光层和阴极；所述多个发光区域的阴极构成共用的整层电极层；
    所述光阻结构包括位于所述整层电极层内的第一开口，所述第一开口位于与相邻的发光区域之间的部位相对的位置上。
  12. 如权利要求11所述的OLED显示面板，其中，还包括位于所述发光区域之间的像素界定结构；
    所述光阻结构还包括位于所述像素界定结构内的第二开口，所述第二开口在衬底上的投影覆盖所述第一开口在衬底上的投影。
  13. 如权利要求11或12所述的OLED显示面板，其中，每个所述发光区域还包括位于所述衬底和所述阳极之间的源漏电极层，所述源漏电极层包括数据线；
    设相邻的两个发光区域分别为第五发光区域和第六发光区域，所述第五发光区域和所述第六发光区域的数据线相互平行且相邻；在与所述第五发光区域和所述第六发光区域之间具有所述第一开口，所述第一开口的宽度大于所述第五发光区域的数据线和所述第六发光区域的数据线之间的间距。
  14. 一种显示装置，其中，包括权利要求1-13任一项所述的OLED显示面板。
PCT/CN2020/084344 2019-05-17 2020-04-11 Oled显示面板及显示装置 WO2020233277A1 (zh)

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CN111029482B (zh) * 2019-12-17 2021-01-01 深圳市华星光电半导体显示技术有限公司 一种显示面板及显示装置

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