WO2020232965A1 - Oled显示面板及显示装置 - Google Patents

Oled显示面板及显示装置 Download PDF

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Publication number
WO2020232965A1
WO2020232965A1 PCT/CN2019/112647 CN2019112647W WO2020232965A1 WO 2020232965 A1 WO2020232965 A1 WO 2020232965A1 CN 2019112647 W CN2019112647 W CN 2019112647W WO 2020232965 A1 WO2020232965 A1 WO 2020232965A1
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Prior art keywords
light
layer
oled display
light coupling
display panel
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Ceased
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PCT/CN2019/112647
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English (en)
French (fr)
Inventor
汪博
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/630,446 priority Critical patent/US11114644B2/en
Publication of WO2020232965A1 publication Critical patent/WO2020232965A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks

Definitions

  • This application relates to the display field, and in particular to an OLED display panel and a display device.
  • OLED Organic light Emitting Display
  • the luminous efficiency of the existing OLED display is low and needs to be improved.
  • This application provides an OLED display panel, including:
  • At least two light coupling layers are formed in the light emitting direction of the light emitting function layer
  • the refractive index of all the light coupling layers gradually decreases.
  • the OLED display panel in the light-emitting direction of the light-emitting function layer, there are at least two light coupling layers with increasing refractive indexes.
  • the total thickness of the light coupling layer is 50-120 nm.
  • the total thickness of the light coupling layer is 80 nm.
  • the thickness of the different light coupling layers is the same.
  • the OLED display panel provided by the present application, there are at least two layers of the light coupling layer that have different thicknesses.
  • the thickness of the light coupling layer decreases in the light emitting direction of the light emitting function layer.
  • the thickness of the light coupling layer increases in the light emitting direction of the light emitting function layer.
  • the material of the light coupling layer is an organic small molecule material.
  • an OLED display device including an OLED display panel, the OLED display panel including:
  • At least two light coupling layers are formed in the light emitting direction of the light emitting function layer
  • the refractive index of all the light coupling layers gradually decreases.
  • the OLED display device in the light-emitting direction of the light-emitting functional layer, there are at least two light coupling layers with increasing refractive indexes.
  • the total thickness of the light coupling layer is 50-120 nm.
  • the total thickness of the light coupling layer is 80 nm.
  • the thicknesses of the different light coupling layers are the same.
  • the OLED display device there are at least two layers of the light coupling layer that have different thicknesses.
  • the thickness of the light coupling layer decreases in the light emitting direction of the light emitting function layer.
  • the thickness of the light coupling layer increases in the light emitting direction of the light emitting function layer.
  • the material of the light coupling layer is an organic small molecule material.
  • the present application provides an OLED display panel and a display device.
  • the OLED display panel includes a substrate, a light-emitting function layer formed on the substrate, and at least two light coupling layers formed in the light-emitting direction of the light-emitting function layer. In the light emitting direction of the layer, there are at least two light coupling layers with decreasing refractive index.
  • the light coupling layer with a certain thickness and multiple layers of decreasing refractive index is arranged in the light output direction of the OLED display panel.
  • the light coupling layer adjusts the interaction of wide-angle interference and multi-beam interference inside the OLED display panel, thereby enhancing the light output coupling.
  • the luminous efficiency of the existing OLED display is greatly improved, the working brightness of the OLED display is improved, the driving current and power loss of the OLED display are reduced, and the service life of the OLED display is significantly improved.
  • FIG. 1 is a schematic structural diagram of a first OLED display panel provided by an embodiment of the application.
  • FIG. 2 is a schematic structural diagram of a second OLED display panel provided by an embodiment of the application.
  • FIG. 3 is a schematic structural diagram of a third OLED display panel provided by an embodiment of the application.
  • FIG. 4 is a schematic structural diagram of a fourth OLED display panel provided by an embodiment of the application.
  • OLED organic light emitting diodes
  • the present application provides an OLED display panel that can improve the above-mentioned problems.
  • the OLED display panel provided by the present application includes a top-emitting OLED display panel and a bottom-emitting OLED display panel.
  • a top-emitting OLED display panel is used for further explanation.
  • the OLED display panel provided by the present application includes:
  • the substrate 10 is a TFT substrate, including a base substrate 101, a semiconductor active layer 102, a gate insulating layer 103, a gate layer 104, and an interlayer insulation layered from bottom to top. Layer 105, source and drain layer 106, and passivation layer 107.
  • the first electrode layer 20 is formed on the substrate 10;
  • the pixel defining layer 30 is formed on the first electrode layer 20;
  • the light-emitting function layer 40 is formed on the pixel definition layer 30, and includes a hole transport layer 401, a light-emitting material layer 402, and an electron transport layer 403;
  • the second electrode layer 50 is formed on the light-emitting function layer 40;
  • At least two light coupling layers 60 are formed on the second electrode layer 50, wherein in the light emitting direction of the light-emitting function layer 40, there are at least two light coupling layers with decreasing refractive index;
  • the encapsulation layer 70 is formed on the light coupling layer 60 and includes a first inorganic layer 701, an organic layer 702, and a second inorganic layer 703.
  • a light coupling layer with a certain thickness and a decreasing refractive index is arranged in the light emitting direction of the OLED display panel, and the light coupling layer is used to adjust the interaction between wide-angle interference and multi-beam interference inside the OLED display panel, thereby enhancing
  • the light output coupling greatly improves the luminous efficiency of the existing OLED display, improves the working brightness of the OLED display, reduces the drive current and power loss of the OLED display, and significantly improves the life of the OLED display.
  • the first electrode layer 20 is an anode layer
  • the second electrode layer 50 is a cathode layer
  • the first electrode layer 20 is a cathode layer
  • the second electrode layer 50 is Anode layer.
  • the second electrode layer 50 is a semi-transparent electrode material, which also has a semi-reflective effect on light; a micro-cavity structure is formed between the semi-reflective second electrode layer 50 and the fully reflective substrate 10 , The light interference is strengthened in the microcavity.
  • the microcavity is a kind of optical microcavity, which refers to an optical microresonator whose cavity size is as small as that of resonant light waves in at least one direction.
  • the cavity length of the microcavity is the thickness of the microcavity composed of the semi-reflective second electrode layer 50, the light-emitting function layer 40, the pixel definition layer 30, the first electrode layer 20, and the total reflection substrate 10.
  • the cavity length of the cavity can be adjusted according to different structures. By selecting an appropriate cavity length, the light extraction efficiency of the OLED device is enhanced due to interference.
  • the cavity length of the microcavity is 300-900 nm.
  • the first electrode layer 20 is an anode layer, and the anode layer is a laminated structure of indium tin oxide, silver, and indium tin oxide (ITO/Ag/ITO);
  • the second electrode layer 50 is a cathode layer, and the cathode layer is one or more of ytterbium (Yb), calcium (Ca), magnesium (Mg), and silver (Ag).
  • Yb ytterbium
  • Ca calcium
  • Mg magnesium
  • Ag silver
  • the light-emitting function layer 40 is located in the microcavity, and includes a hole transport layer 401, a light-emitting material layer 402, and a light-emitting material layer 402.
  • the light-emitting function layer 40 may further include an electron injection layer disposed between the cathode layer and the electron transport layer, and an electron injection layer disposed between the hole transport layer and the anode layer. Hole injection layer.
  • the hole transport layer 401 is a material with high hole mobility, high thermal stability, and good electron and exciton blocking ability.
  • the material of the hole transport layer 401 is one or more of 2TNATA, NPB, TAPC, and the hole transport layer 401 has a thickness of 40-150 nm, and is deposited on the anode layer 20 by vacuum thermal evaporation. on.
  • the light-emitting material layer 402 is an organic semiconductor light-emitting material, including red, green, and blue light-emitting molecules, or may only include white light-emitting molecules.
  • the material of the light-emitting material layer 402 is an organic small molecule blue light-emitting material with a thickness of 20-50 nm.
  • the electron transport layer 403 is a material with high electron mobility, high thermal stability, and good hole and exciton blocking ability.
  • the material of the electron transport layer 403 is one or more of TPBi, BPhen, and TmPyPB, and the thickness of the electron transport layer 403 is 20-80 nm, which is deposited on the luminescent material layer 402 by vacuum thermal evaporation .
  • the holes in the anode and the electrons in the cathode are both injected into the light-emitting material layer; the holes and electrons meet in the light-emitting material layer, and the two recombine to form electron-vacancy. Holes pair and release energy; the energy is emitted in the form of light, which passes through different light-emitting molecules in the light-emitting material layer to show different colors of light, and is uniformly emitted from both sides of the light-emitting functional layer.
  • the refractive index of organic matter is higher than that of air and glass, and its refractive index is approximately 1.6-1.7; the cathode layer is an extremely thin layer of metal material, and its refractive index is approximately 1.8-2.0.
  • the refractive index of the light coupling layer 60 is greater than the refractive index of the organic light-emitting function layer 40 and the cathode layer 50, that is, greater than 2.0; the increase of the high refractive index light coupling layer 60 can improve the cathode layer
  • the reflectivity of 50 to light that is, the increase of the light reflected into the microcavity after entering the cathode layer 50. In this way, the light that is totally reflected by the substrate 10 into the microcavity and the light that is half-reflected into the microcavity by the cathode layer 50, as well as the light emitted and reflected from different angles and positions, will have related interference effects in the microcavity.
  • the long microcavity can selectively enhance the light of a certain wavelength range, while weakening the light of the other wavelength ranges, so as to achieve the effect of improving the optical coupling. Since light interferes in the microcavity, the greater the refractive index of the light coupling layer 60, the greater the reflectivity of light when interacting with the cathode layer 50, and the effect of light interference enhancement in the microcavity is better, and the light emitted by the OLED display device is enhanced due to interference The better the effect, the greater the external quantum efficiency of the OLED device.
  • the refractive index of the encapsulation layer 70 is approximately 1-1.5, which is smaller than that of the light coupling layer 60; when light enters the encapsulation layer 70 from the light coupling layer 60, it is light
  • the optically dense substance enters the optically thin substance, a full emission phenomenon will occur, that is, the light has a waveguide phenomenon inside the optical coupling layer 60 and the encapsulation layer 70 and is enclosed in the optical coupling layer 60 and the encapsulation layer 70 and cannot be emitted into the air. Therefore, the refractive index of the light coupling layer close to the light emitting direction of the OLED display panel is as small as possible to reduce the phenomenon of total reflection, thereby reducing the light loss in the waveguide mode and improving the light output efficiency.
  • a light coupling layer with a higher refractive index is arranged outside the cathode layer 50 to increase the reflectivity of light at the cathode layer 50, and a light coupling layer with a lower refractive index is arranged on the side close to the encapsulation layer 70 to reduce light at the encapsulation layer.
  • this application proposes to provide at least two light coupling layers in the light emitting direction of the light-emitting functional layer, and there are at least two light coupling layers with decreasing refractive index.
  • the driving current required by the OLED display panel is greatly reduced, the power consumption is also reduced, and the life of the OLED device is greatly improved; at the same time, due to the light emission
  • the working brightness and maximum brightness of OLED devices have been significantly improved, which greatly enhances the practicability of OLED devices, has a wider range of applications, and has stronger market competitiveness.
  • the number of layers of the light coupling layer is different, the thickness of each light coupling layer is different, and the refractive index settings of each light coupling layer are different, which will have different effects on the light extraction efficiency of the OLED display panel.
  • the specific embodiments are now combined with this application The setting of the light coupling layer of the OLED display panel is further explained.
  • the light coupling layer 60 is an organic small molecule material with a higher refractive index, such as TPTE, TPPE, etc., or an inorganic material with a higher refractive index.
  • the material of the light coupling layer 60 is one or more of 2TNATA, NPB, and TAPC.
  • the total thickness of the light coupling layer 60 is 50-120 nm, preferably 80 nm. In the following embodiments, the total thickness of the light coupling layer 60 is all 80 nm. If the total thickness of the light coupling layer 60 is set too thick, the light path of the OLED display panel in the light coupling layer 60 will be too long, the absorption rate of light will be too large, and the light output effect will be affected.
  • the overall thickness of the panel is not conducive to the formation of a thin and light OLED display panel; the total thickness of the light coupling layer 60 is set too low to achieve a light reflection effect, and an effective light coupling effect cannot be achieved.
  • the light coupling layer 60 includes a first light coupling layer 601, a second light coupling layer 602, and a third light coupling layer 603 that are sequentially stacked in the light emitting direction of the light emitting function layer 40. And the fourth light coupling layer 604.
  • the first light coupling layer 601, the second light coupling layer 602, the third light coupling layer 603, and the fourth light coupling layer 604 have the same thickness, which is 20 nm; the first light coupling layer 601, the second light coupling layer
  • the refractive indexes of the layer 602, the third light coupling layer 603, and the fourth light coupling layer 604 decrease in order.
  • the first light coupling layer 601 with the largest refractive index is arranged on the side close to the cathode layer 50, so that the first light coupling layer 601 and the cathode layer 50 work together to maximize the reflectivity of light, which greatly improves the efficiency.
  • the effect of light interference enhancement in the microcavity is uniformly set, and the refractive index decreases successively, so that when the light enters the entire optical coupling layer 60 and even into the encapsulation layer, the transition from the optically dense substance to the optically thin substance is uniform and slow, greatly reducing The total reflection phenomenon is reduced, and the light extraction efficiency is improved.
  • the number of layers included in the light coupling layer 60 may also be three, five, or other layers, which is not limited to the four layers in the embodiment of the present application.
  • the light coupling layer 60 includes a first light coupling layer 601, a second light coupling layer 602, and a third light coupling layer 603 that are sequentially stacked in the light emitting direction of the light emitting function layer 40. And the fourth light coupling layer 604.
  • the thicknesses of the first light coupling layer 601, the second light coupling layer 602, the third light coupling layer 603, and the fourth light coupling layer 604 gradually decrease, and the thicknesses of the first, second, third, and fourth light coupling layers They are respectively 40 nm, 25 nm, 15 nm, and 10 nm; the refractive indices of the first light coupling layer 601, the second light coupling layer 602, the third light coupling layer 603, and the fourth light coupling layer 604 also decrease in order.
  • the first light coupling layer 601 with the largest thickness and the largest refractive index is arranged on the side close to the cathode layer 50, so that the first light coupling layer 601 and the cathode layer 50 work together to maximize the reflectivity of light and maximize the efficiency.
  • the refractive index decreases successively, so that when the light enters the entire optical coupling layer 60 and even the encapsulation layer, the transition from the optically dense substance to the optically thin substance is uniform and slow, which greatly reduces total reflection. Phenomenon, improving the light extraction efficiency.
  • the number of layers included in the light coupling layer 60 may also be three, five, or other layers, which is not limited to the four layers in the embodiment of the present application.
  • the light coupling layer 60 includes a first light coupling layer 601, a second light coupling layer 602, and a third light coupling layer 603 that are sequentially stacked in the light emitting direction of the light emitting function layer 40. And the fourth light coupling layer 604.
  • the thicknesses of the first light coupling layer 601, the second light coupling layer 602, the third light coupling layer 603, and the fourth light coupling layer 604 increase in order.
  • the thicknesses of the first, second, third, and fourth light coupling layers They are 10 nm, 15 nm, 25 nm, and 40 nm respectively; the refractive indices of the first light coupling layer 601, the second light coupling layer 602, the third light coupling layer 603, and the fourth light coupling layer 604 decrease in order.
  • the first light coupling layer 601 with the largest refractive index is arranged on the side close to the cathode layer 50, so that the first light coupling layer 601 and the cathode layer 50 work together to have a large reflectivity of light, which greatly improves the efficiency.
  • the refractive index decreases successively, so that when the light enters the entire optical coupling layer 60 and even the encapsulation layer, the transition from the optically dense substance to the optically thin substance is uniform and slow, which greatly reduces total reflection. Phenomenon, improving the light extraction efficiency.
  • the number of layers included in the light coupling layer 60 may also be three, five, or other layers, which is not limited to the four layers in the embodiment of the present application.
  • the light coupling layer 60 includes a first light coupling layer 601, a second light coupling layer 602, and a third light coupling layer 603 that are sequentially stacked in the light emitting direction of the light emitting function layer 40. And the fourth light coupling layer 604.
  • the thickness of the first light coupling layer 601 is greater than the thickness of the third light coupling layer 603, the thickness of the third light coupling layer 603 is greater than the thickness of the second light coupling layer 602, and the thickness of the second light coupling layer 602 is greater than that of the fourth light coupling layer.
  • the thickness of the coupling layer 604, the thicknesses of the first, second, third, and fourth light coupling layers are 40nm, 15nm, 25nm, and 10nm respectively; the first light coupling layer 601, the second light coupling layer 602, and the third The refractive index of the light coupling layer 603 and the fourth light coupling layer 604 gradually decrease.
  • the first light coupling layer 601 with the largest thickness and the largest refractive index is arranged on the side close to the cathode layer 50, so that the first light coupling layer 601 and the cathode layer 50 work together to have a large reflectivity of light and increase the maximum efficiency.
  • the effect of light interference enhancement in the microcavity is improved.
  • the refractive index decreases successively, so that when the light enters the entire optical coupling layer 60 and even the encapsulation layer, the transition from the optically dense substance to the optically thin substance is uniform and slow, which greatly reduces total reflection. Phenomenon, improving the light extraction efficiency.
  • the number of layers included in the light coupling layer 60 may also be three, five, or other layers, which is not limited to the four layers in the embodiment of the present application.
  • an embodiment of the present application provides a display device, the display device includes an OLED display panel, and the display panel includes:
  • the first electrode layer is formed on the substrate
  • the light-emitting function layer is formed on the first electrode layer and includes a hole transport layer, a light-emitting material layer, and an electron transport layer;
  • the second electrode layer is formed on the light-emitting function layer
  • At least two light coupling layers formed on the second electrode layer At least two light coupling layers formed on the second electrode layer
  • the light-emitting direction of the light-emitting functional layer there are at least two light coupling layers with decreasing refractive index.
  • the embodiment of the application provides a display device, the display device includes an OLED display panel, and the OLED display panel adjusts the OLED display by using the light coupling layer to adjust the OLED display by arranging a light coupling layer with a certain thickness and a decreasing refractive index in the light emitting direction of the panel.
  • the interaction of wide-angle interference and multi-beam interference inside the panel enhances the light output coupling, greatly improves the luminous efficiency of the existing OLED display, improves the working brightness of the OLED display, and reduces the drive current and power loss of the OLED display. Significantly improve the life of the OLED display.
  • the refractive index of all the light coupling layers gradually decreases.
  • the total thickness of the light coupling layer is 50-120 nm.
  • the total thickness of the light coupling layer is 80 nm.
  • the thickness of the different light coupling layers is the same.
  • At least two light coupling layers have different thicknesses.
  • the thickness of the light coupling layer decreases in the light emitting direction of the light emitting function layer.
  • the thickness of the light coupling layer increases in the light emitting direction of the light emitting function layer.
  • the material of the light coupling layer is an organic small molecule material.
  • the principle of the display device provided by the embodiment of the present application is similar to that of the OLED display panel in the above-mentioned embodiment.
  • the present application provides an OLED display panel and a display device.
  • the OLED display panel includes a substrate, a light-emitting function layer formed on the substrate, and at least two light coupling layers formed in the light-emitting direction of the light-emitting function layer. In the light emitting direction of the layer, there are at least two light coupling layers with decreasing refractive index.
  • the light coupling layer with a certain thickness and multiple layers of decreasing refractive index is arranged in the light output direction of the OLED display panel.
  • the light coupling layer adjusts the interaction of wide-angle interference and multi-beam interference inside the OLED display panel, thereby enhancing the light output coupling.
  • the luminous efficiency of the existing OLED display is greatly improved, the working brightness of the OLED display is improved, the driving current and power loss of the OLED display are reduced, and the service life of the OLED display is significantly improved.

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  • Optics & Photonics (AREA)
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Abstract

一种OLED显示面板及显示装置，其OLED显示面板包括基板（10）、发光功能层（40）、以及至少两层光耦合层（60），其中，在发光功能层（40）的出光方向上，存在至少两层光耦合层（60）的折射率递减。通过光耦合层（60）调节OLED显示面板内部宽角度干涉和多光束干涉的相互作用，从而增强了光输出耦合，提高了现有OLED显示器的发光效率，提高了OLED显示器的寿命。

Description

OLED显示面板及显示装置 技术领域
本申请涉及显示领域，尤其涉及一种OLED显示面板及显示装置。
 背景技术
有机发光显示（Organic light Emitting Display，OLED），由于具有无需背光源、高对比度、超轻薄的显著特点已经成为当今最重要的显示技术之一。而OLED的发光效率作为OLED显示器显示性能的重要影响因素，需要提高。
然而，现有OLED显示器的发光效率低，有待提高。
 技术问题
现有OLED显示器的发光效率低，有待提高。
 技术解决方案
为解决现有OLED显示器的发光效率低的问题，本申请提供的技术方案如下：
本申请提供一种OLED显示面板，包括:
基板；
发光功能层，形成于所述基板上；
至少两层光耦合层，形成于所述发光功能层的出光方向上；
其中，在所述发光功能层的出光方向上，存在至少两层所述光耦合层的折射率递减。
在本申请提供的OLED显示面板中，在所述发光功能层的出光方向上，所有所述光耦合层的折射率逐渐递减。
在本申请提供的OLED显示面板中，在所述发光功能层的出光方向上，存在至少两个所述光耦合层的折射率递增。
在本申请提供的OLED显示面板中，所述光耦合层的总厚度为50-120nm。
在本申请提供的OLED显示面板中，所述光耦合层的总厚度为80nm。
在本申请提供的OLED显示面板中，所述不同光耦合层的厚度均相同。
在本申请提供的OLED显示面板中，存在至少两层所述光耦合层的厚度不相同。
在本申请提供的OLED显示面板中，在所述发光功能层的出光方向上，所述光耦合层的厚度递减。
在本申请提供的OLED显示面板中，在所述发光功能层的出光方向上，所述光耦合层的厚度递增。
在本申请提供的OLED显示面板中，所述光耦合层的材料为有机小分子材料。
同时，本申请提供一种OLED显示装置，包括OLED显示面板，所述OLED显示面板包括：
基板；
发光功能层，形成于所述基板上；
至少两层光耦合层，形成于所述发光功能层的出光方向上；
其中，在所述发光功能层的出光方向上，存在至少两层所述光耦合层的折射率递减。
在本申请提供的OLED显示装置中，在所述发光功能层的出光方向上，所有所述光耦合层的折射率逐渐递减。
在本申请提供的OLED显示装置中，在所述发光功能层的出光方向上，存在至少两个所述光耦合层的折射率递增。
在本申请提供的OLED显示装置中，所述光耦合层的总厚度为50-120nm。
在本申请提供的OLED显示装置中，所述光耦合层的总厚度为80nm。
在本申请提供的OLED显示装置中，所述不同光耦合层的厚度均相同。
在本申请提供的OLED显示装置中，存在至少两层所述光耦合层的厚度不相同。
在本申请提供的OLED显示装置中，在所述发光功能层的出光方向上，所述光耦合层的厚度递减。
在本申请提供的OLED显示装置中，在所述发光功能层的出光方向上，所述光耦合层的厚度递增。
在本申请提供的OLED显示装置中，所述光耦合层的材料为有机小分子材料。
 有益效果
本申请提供一种OLED显示面板及显示装置，该OLED显示面板包括基板、形成于基板上的发光功能层、以及形成于发光功能层出光方向上的至少两层光耦合层，其中，在发光功能层的出光方向上，存在至少两层光耦合层的折射率递减。采用在OLED显示面板的出光方向上设置一定厚度、多层折射率递减的光耦合层，通过光耦合层调节OLED显示面板内部宽角度干涉和多光束干涉的相互作用，从而增强了光输出耦合，大大提高了现有OLED显示器的发光效率，提高了OLED显示器的工作亮度，降低了OLED显示器的驱动电流和功率损耗，显著提高了OLED显示器的寿命。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的第一种OLED显示面板的结构示意图。
图2为本申请实施例提供的第二种OLED显示面板的结构示意图。
图3为本申请实施例提供的第三种OLED显示面板的结构示意图。
图4为本申请实施例提供的第四种OLED显示面板的结构示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
随着新型磷光材料的应用，有机发光二极管(OLED)的理论内量子效率已经接近100％，但OLED器件的出光效率仍然很低。制约OLED器件发光效率的因素除了发光材料的内量子转化效率，还有一个重要的原因是光耦合效率低。OLED显示器出光效率低，就需要较大驱动电流才能达到所需亮度，功耗较高，寿命较短，这在很大程度上限制了OLED的实际应用。
为了提高OLED的光耦合效率，本申请提供一种OLED显示面板可以改善上述问题。
本申请提供的OLED显示面板包括顶发光OLED显示面板和底发光OLED显示面板，在本申请的实施例中，以顶发光OLED显示面板作进一步的解释说明。
在一种实施例中，如图1至图4所示，本申请提供的OLED显示面板包括:
基板10，在本申请实施例中，所述基板10为TFT基板，包括由下至上层叠设置的衬底基板101、半导体有源层102、栅极绝缘层103、栅极层104、层间绝缘层105、源漏极层106、以及钝化层107。
第一电极层20，形成于基板10上；
像素定义层30，形成于第一电极层20上；
发光功能层40，形成于像素定义层30上，包括空穴传输层401、发光材料层402、以及电子传输层403；
第二电极层50，形成于发光功能层40上；
至少两层光耦合层60，形成于第二电极层50上，其中，在发光功能层40的出光方向上，存在至少两层光耦合层的折射率递减；
封装层70，形成于光耦合层60上，包括第一无机层701、有机层702、第二无机层703。
本申请实施例通过在OLED显示面板的出光方向上设置一定厚度、多层折射率递减的光耦合层，利用光耦合层调节OLED显示面板内部宽角度干涉和多光束干涉的相互作用，从而增强了光输出耦合，大大提高了现有OLED显示器的发光效率，提高了OLED显示器的工作亮度，降低了OLED显示器的驱动电流和功率损耗，显著提高了OLED显示器的寿命。
在一种实施例中，第一电极层20为阳极层，第二电极层50为阴极层；在另一种实施例中，可以是第一电极层20为阴极层，第二电极层50为阳极层。对于顶发射OLED显示器来说，第二电极层50为半透明的电极材料，对光线同样具有半反射作用；该半反射的第二电极层50与全反射的基板10之间形成了微腔结构，光线在微腔内发生干涉加强。所述微腔是一种光学微腔，是指至少在一个方向上腔的尺寸小至与谐振光波相比拟的光学微型谐振腔。本申请实施例中，微腔的腔长即为半反射第二电极层50、发光功能层40、像素定义层30、第一电极层20、以及全反射基板10构成的微腔的厚度，微腔的腔长可以根据不同结构进行调整，通过选择合适的腔长，使OLED器件的出光效率因干涉加强。优选地，微腔的腔长为300~900nm。
在一种实施例中，如图1至图4所示，第一电极层20为阳极层，阳极层为氧化铟锡、银和氧化铟锡（ITO/Ag/ITO）的叠层结构；第二电极层50为阴极层，阴极层为镱（Yb）、钙（Ca）、镁（Mg）、银（Ag）中的一种或几种。以下实施例均以第一电极层20为阳极层，第二电极层50为阴极层。
在一种实施例中，发光功能层40位于所述微腔内，包括空穴传输层401、发光材料层402、以及发光材料层402。为了能够提高电子和空穴注入发光材料层的效率，发光功能层40进一步还可以包括设置在阴极层与电子传输层之间的电子注入层，以及设置在空穴传输层与阳极层之间的空穴注入层。
空穴传输层401为具备高的空穴迁移率、高的热稳定性和良好的电子和激子阻挡能力的材料。在一种实施例中，空穴传输层401的材料为2TNATA、NPB、TAPC中的一种或几种，空穴传输层401的厚度为40-150nm，通过真空热蒸镀沉积在阳极层20上。
发光材料层402为有机半导体发光材料，包括红光、绿光、蓝光的发光分子，也可以仅包括白光的发光分子。在一种实施例中，发光材料层402的材料为有机小分子蓝光发光材料，厚度为20-50nm。
电子传输层403为具备高的电子迁移率、高的热稳定性和良好的空穴和激子阻挡能力的材料。在一种实施例中，电子传输层403的材料为TPBi、BPhen、TmPyPB中的一种或几种，电子传输层403的厚度为20-80nm，通过真空热蒸镀沉积在发光材料层402上。
当向阳极和阴极施加工作电压时，阳极中的空穴和阴极中的电子均注入到所述发光材料层中；空穴和电子在发光材料层中相遇，二者复合在一起形成电子-空穴对，并释放出能量；该能量以光的形式发出，经过发光材料层中的不同发光分子而显示为不同颜色的光，并从发光功能层的两侧均匀的射出。
有机物的折射率高于空气和玻璃，其折射率大致为1.6-1.7；阴极层为极薄的金属材料层，其折射率大致为1.8-2.0。光从发光功能层40上发出之后，一个方向上传输到基板10，被基板全反射；另一个方向上传输到阴极层50，发生半反射。在阴极层50的上方增设光耦合层60，光耦合层60的折射率大于有机发光功能层40以及阴极层50的折射率，即大于2.0；高折射率光耦合层60的增加可以提高阴极层50对光线的反射率，即光线射入到阴极层50后被反射到为微腔中的增多。这样，基板10全反射到微腔中的光线和阴极层50半反射到微腔中的光线，以及不同角度和位置发射和反射的光线，都会在微腔中发生相关干涉作用，通过设置一定腔长的微腔，便可以有选择性的增强一定波长范围的光线，同时削弱其余波长范围的光线，从而达到提高光耦合的效果。由于光线在微腔内发生干涉，因而光耦合层60折射率越大，与阴极层50共同作用对光线的反射率越大，微腔内光线干涉增强的效果好，OLED显示器件出光因干涉增强的效果越好，大大提高OLED 器件的外量子效率。
另一方面，由于光耦合层60外侧还设置有封装层70，封装层70的折射率大致为1-1.5，小于光耦合层60；光线由光耦合层60射入封装层70时，为光线由光密物质射入光疏物质，会发生全发射现象，即光在光耦合层60和封装层70内部存在波导现象而被封闭在光耦合层60和封装层70内部不能出射到空气中。因此，靠近OLED显示面板的出光方向的光耦合层的折射率因尽量小，以减少全反射现象，从而减小损耗在波导模式中的光，提高光的输出效率。
综合在阴极层50外侧设置折射率较大的光耦合层以提高光线在阴极层50处的反射率，以及在靠近封装层70侧设置折射率小的光耦合层以减少光线在封装层处的全反射率，本申请提出在发光功能层的出光方向上设置至少两层光耦合层，其中存在至少两层光耦合层的折射率递减。通过上述改进，大大提高了OLED 器件的外量子效率，在同等显示亮度下，OLED显示面板所需要的驱动电流大大降低，功耗也降低，OLED器件的寿命也得到极大提高；同时，由于出光效率的提高，OLED器件的工作亮度和最大亮度都得到显著提高，这使OLED器件的实用性大大增强，应用领域更加广泛，具有更强的市场竞争力。
光耦合层的层数设置不同，各层光耦合层的厚度设置不同，各层光耦合层的折射率设置不同，都会对OLED显示面板的出光效率产生不同的影响，现结合具体实施例对本申请的OLED显示面板的光耦合层的设置做进一步的诠释说明。
在一种实施例中，光耦合层60为具有较高折射率的有机小分子材料，例如TPTE、TPPE等，也可以是有较高折射率无机材料。在一种实施例中，光耦合层60的材料为2TNATA、NPB、TAPC中的一种或几种。光耦合层60的总厚度为50-120nm，优选为80nm，在以下实施例中，光耦合层60的总厚度均为80nm。光耦合层60的总厚度设置的太厚，会使OLED显示面板在光耦合层60中的光路过长，对光线的吸收率过大，影响了出光效果，同时会过大的增加了OLED显示面板的整体厚度，不利于轻薄OLED显示面板的形成；光耦合层60的总厚度设置的太低，无法实现对光的反射效果，达不到有效的光耦合效果。
在一种实施例中，如图1所示，光耦合层60包括在发光功能层40出光方向上依次层叠设置的第一光耦合层601、第二光耦合层602、第三光耦合层603和第四光耦合层604。所述第一光耦合层601、第二光耦合层602、第三光耦合层603和第四光耦合层604的厚度相同，均为20nm；所述第一光耦合层601、第二光耦合层602、第三光耦合层603和第四光耦合层604的折射率依次递减。
本实施例在靠近阴极层50的一侧设置折射率最大的第一光耦合层601，使得第一光耦合层601和阴极层50共同作用对光线的反射率达最大，极大效率的提高了微腔内光线干涉增强的效果。另一方面，厚度均匀设置，折射率依次递减，使得光线在整个光耦合层60乃至射入到封装层中时，从光密物质到光疏物质的过度都是均匀缓慢的，极大的减小了全反射现象，提高了出光效率。
在本实施例中，还可以是所述第一光耦合层601、第二光耦合层602、第三光耦合层603和第四光耦合层604中，至少存在两层光耦合层的折射率递增，同样可以在一定程度上达到提高OLED显示面板出光效率的目的。另一方面，所述光耦合层60包括的层数还可以为三层、五层或其他层数，不限制于本申请实施例的四层。同等厚度的光耦合层60，层数越多，折射率依次递减，光线在光耦合层60中的全反射率越低，出光率越高；层数越少，靠近阴极层的第一光耦合层的厚度越大，光耦合层与所述阴极层共同作用向微腔中反射的光线越多，光线干涉增强的效果越好。
在一种实施例中，如图2所示，光耦合层60包括在发光功能层40出光方向上依次层叠设置的第一光耦合层601、第二光耦合层602、第三光耦合层603和第四光耦合层604。所述第一光耦合层601、第二光耦合层602、第三光耦合层603和第四光耦合层604的厚度依次递减，第一、第二、第三、第四光耦合层的厚度分别为40nm、25nm、15nm、10nm；所述第一光耦合层601、第二光耦合层602、第三光耦合层603和第四光耦合层604的折射率也依次递减。
本实施例在靠近阴极层50的一侧设置厚度最大、折射率最大的第一光耦合层601，使得第一光耦合层601和阴极层50共同作用对光线的反射率达最大，最大效率的提高了微腔内光线干涉增强的效果。另一方面，折射率依次递减，使得光线在整个光耦合层60乃至射入到封装层中时，从光密物质到光疏物质的过度都是均匀缓慢的，极大的减小了全反射现象，提高了出光效率。
在本实施例中，还可以是所述第一光耦合层601、第二光耦合层602、第三光耦合层603和第四光耦合层604中，至少存在两层光耦合层的折射率递增，同样可以在一定程度上达到提高OLED显示面板出光效率的目的。另一方面，所述光耦合层60包括的层数还可以为三层、五层或其他层数，不限制于本申请实施例的四层。同等厚度的光耦合层60，层数越多，折射率依次递减，光线在光耦合层60中的全反射率越低，出光率越高；层数越少，靠近阴极层的第一光耦合层的厚度越大，光耦合层与所述阴极层共同作用向微腔中反射的光线越多，光线干涉增强的效果越好。
在一种实施例中，如图3所示，光耦合层60包括在发光功能层40出光方向上依次层叠设置的第一光耦合层601、第二光耦合层602、第三光耦合层603和第四光耦合层604。所述第一光耦合层601、第二光耦合层602、第三光耦合层603和第四光耦合层604的厚度依次递增，第一、第二、第三、第四光耦合层的厚度分别为10nm、15nm、25nm、40nm；所述第一光耦合层601、第二光耦合层602、第三光耦合层603和第四光耦合层604的折射率依次递减。
本实施例在靠近阴极层50的一侧设置折射率最大的第一光耦合层601，使得第一光耦合层601和阴极层50共同作用对光线的反射率大，极大效率的提高了微腔内光线干涉增强的效果。另一方面，折射率依次递减，使得光线在整个光耦合层60乃至射入到封装层中时，从光密物质到光疏物质的过度都是均匀缓慢的，极大的减小了全反射现象，提高了出光效率。
在本实施例中，还可以是所述第一光耦合层601、第二光耦合层602、第三光耦合层603和第四光耦合层604中，至少存在两层光耦合层的折射率递增，同样可以在一定程度上达到提高OLED显示面板出光效率的目的。另一方面，所述光耦合层60包括的层数还可以为三层、五层或其他层数，不限制于本申请实施例的四层。同等厚度的光耦合层60，层数越多，折射率依次递减，光线在光耦合层60中的全反射率越低，出光率越高；层数越少，靠近阴极层的第一光耦合层的厚度越大，光耦合层与所述阴极层共同作用向微腔中反射的光线越多，光线干涉增强的效果越好。
在一种实施例中，如图4所示，光耦合层60包括在发光功能层40出光方向上依次层叠设置的第一光耦合层601、第二光耦合层602、第三光耦合层603和第四光耦合层604。所述第一光耦合层601的厚度大于第三光耦合层603的厚度，第三光耦合层603的厚度大于第二光耦合层602的厚度，第二光耦合层602的厚度大于第四光耦合层604的厚度，第一、第二、第三、第四光耦合层的厚度分别为40nm、15nm、25nm、10nm；所述第一光耦合层601、第二光耦合层602、第三光耦合层603和第四光耦合层604的折射率依次递减。
本实施例在靠近阴极层50的一侧设置厚度最大、折射率最大的第一光耦合层601，使得第一光耦合层601和阴极层50共同作用对光线的反射率大，最大效率的提高了微腔内光线干涉增强的效果。另一方面，折射率依次递减，使得光线在整个光耦合层60乃至射入到封装层中时，从光密物质到光疏物质的过度都是均匀缓慢的，极大的减小了全反射现象，提高了出光效率。
在本实施例中，还可以是所述第一光耦合层601、第二光耦合层602、第三光耦合层603和第四光耦合层604中，至少存在两层光耦合层的折射率递增，同样可以在一定程度上达到提高OLED显示面板出光效率的目的。另一方面，所述光耦合层60包括的层数还可以为三层、五层或其他层数，不限制于本申请实施例的四层。同等厚度的光耦合层60，层数越多，折射率依次递减，光线在光耦合层60中的全反射率越低，出光率越高；层数越少，靠近阴极层的第一光耦合层的厚度越大，光耦合层与所述阴极层共同作用向微腔中反射的光线越多，光线干涉增强的效果越好。
同时，本申请实施例提供一种显示装置，该显示装置包括OLED显示面板，该显示面板包括：
基板；
第一电极层，形成于基板上；
发光功能层，形成于第一电极层上，包括空穴传输层、发光材料层、以及电子传输层；
第二电极层，形成于发光功能层上；
至少两层光耦合层，形成于第二电极层上；
其中，在发光功能层的出光方向上，存在至少两层光耦合层的折射率递减。
本申请实施例提供一种显示装置，该显示装置包括OLED显示面板，该OLED显示面板通过在面板的出光方向上设置一定厚度、多层折射率递减的光耦合层，利用光耦合层调节OLED显示面板内部宽角度干涉和多光束干涉的相互作用，从而增强了光输出耦合，大大提高了现有OLED显示器的发光效率，提高了OLED显示器的工作亮度，降低了OLED显示器的驱动电流和功率损耗，显著提高了OLED显示器的寿命。
在一种实施例中，在发光功能层的出光方向上，所有光耦合层的折射率逐渐递减。
在一种实施例中，在发光功能层的出光方向上，存在至少两个光耦合层的折射率递增。
在一种实施例中，光耦合层的总厚度为50-120nm。
在一种实施例中，光耦合层的总厚度为80nm。
在一种实施例中，不同光耦合层的厚度均相同。
在一种实施例中，存在至少两层光耦合层的厚度不相同。
在一种实施例中，在发光功能层的出光方向上，光耦合层的厚度递减。
在一种实施例中，在发光功能层的出光方向上，光耦合层的厚度递增。
在一种实施例中，光耦合层的材料为有机小分子材料。
本申请实施例提供的显示装置，其原理与上述实施例中的OLED显示面板相似，具体可参考上述OLED显示面板的实施例，在此不再详细赘述。
根据上述实施例可知：
本申请提供一种OLED显示面板及显示装置，该OLED显示面板包括基板、形成于基板上的发光功能层、以及形成于发光功能层出光方向上的至少两层光耦合层，其中，在发光功能层的出光方向上，存在至少两层光耦合层的折射率递减。采用在OLED显示面板的出光方向上设置一定厚度、多层折射率递减的光耦合层，通过光耦合层调节OLED显示面板内部宽角度干涉和多光束干涉的相互作用，从而增强了光输出耦合，大大提高了现有OLED显示器的发光效率，提高了OLED显示器的工作亮度，降低了OLED显示器的驱动电流和功率损耗，显著提高了OLED显示器的寿命。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种OLED显示面板，其包括：
    基板；
    发光功能层，形成于所述基板上；
    至少两层光耦合层，形成于所述发光功能层的出光方向上；
    其中，在所述发光功能层的出光方向上，存在至少两层所述光耦合层的折射率递减。
  2. 如权利要求1所述的OLED显示面板，其中，在所述发光功能层的出光方向上，所有所述光耦合层的折射率逐渐递减。
  3. 如权利要求1所述的OLED显示面板，其中，在所述发光功能层的出光方向上，存在至少两个所述光耦合层的折射率递增。
  4. 如权利要求1所述的OLED显示面板，其中，所述光耦合层的总厚度为50-120nm。
  5. 如权利要求4所述的OLED显示面板，其中，所述光耦合层的总厚度为80nm。
  6. 如权利要求1所述的OLED显示面板，其中，所述不同光耦合层的厚度均相同。
  7. 如权利要求1所述的OLED显示面板，其中，存在至少两层所述光耦合层的厚度不相同。
  8. 如权利要求7所述的OLED显示面板，其中，在所述发光功能层的出光方向上，所述光耦合层的厚度递减。
  9. 如权利要求7所述的OLED显示面板，其中，在所述发光功能层的出光方向上，所述光耦合层的厚度递增。
  10. 如权利要求1所述的OLED显示面板，其中，所述光耦合层的材料为有机小分子材料。
  11. 一种OLED显示装置，其包括OLED显示面板，所述OLED显示面板包括：
    基板；
    发光功能层，形成于所述基板上；
    至少两层光耦合层，形成于所述发光功能层的出光方向上；
    其中，在所述发光功能层的出光方向上，存在至少两层所述光耦合层的折射率递减。
  12. 如权利要求11所述的OLED显示装置，其中，在所述发光功能层的出光方向上，所有所述光耦合层的折射率逐渐递减。
  13. 如权利要求11所述的OLED显示装置，其中，在所述发光功能层的出光方向上，存在至少两个所述光耦合层的折射率递增。
  14. 如权利要求11所述的OLED显示装置，其中，所述光耦合层的总厚度为50-120nm。
  15. 如权利要求14所述的OLED显示装置，其中，所述光耦合层的总厚度为80nm。
  16. 如权利要求11所述的OLED显示装置，其中，所述不同光耦合层的厚度均相同。
  17. 如权利要求11所述的OLED显示装置，其中，存在至少两层所述光耦合层的厚度不相同。
  18. 如权利要求17所述的OLED显示装置，其中，在所述发光功能层的出光方向上，所述光耦合层的厚度递减。
  19. 如权利要求17所述的OLED显示装置，其中，在所述发光功能层的出光方向上，所述光耦合层的厚度递增。
  20. 如权利要求11所述的OLED显示装置，其中，所述光耦合层的材料为有机小分子材料。
PCT/CN2019/112647 2019-05-22 2019-10-23 Oled显示面板及显示装置 Ceased WO2020232965A1 (zh)

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CN111668282A (zh) * 2020-07-03 2020-09-15 武汉华星光电半导体显示技术有限公司 Oled显示面板及显示装置
CN112234148B (zh) * 2020-09-08 2024-07-19 京东方科技集团股份有限公司 发光二极管、显示面板、显示装置和发光装置
CN114975815A (zh) * 2021-02-25 2022-08-30 京东方科技集团股份有限公司 显示面板及其制备方法、显示装置、车辆
CN113451533A (zh) * 2021-07-16 2021-09-28 京东方科技集团股份有限公司 Oled器件及oled显示装置
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