WO2020225411A1 - Procédé de détermination tridimensionnelle d'une image aérienne d'un masque de lithographie - Google Patents

Procédé de détermination tridimensionnelle d'une image aérienne d'un masque de lithographie Download PDF

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Publication number
WO2020225411A1
WO2020225411A1 PCT/EP2020/062834 EP2020062834W WO2020225411A1 WO 2020225411 A1 WO2020225411 A1 WO 2020225411A1 EP 2020062834 W EP2020062834 W EP 2020062834W WO 2020225411 A1 WO2020225411 A1 WO 2020225411A1
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Prior art keywords
measurement
optical unit
imaging
imaging optical
aerial image
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PCT/EP2020/062834
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English (en)
Inventor
Toufic Jabbour
Markus Koch
Christoph HUSEMANN
Ralf GEHRKE
Dirk Hellweg
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Carl Zeiss Smt Gmbh
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Application filed by Carl Zeiss Smt Gmbh filed Critical Carl Zeiss Smt Gmbh
Priority to KR1020217040136A priority Critical patent/KR20220006584A/ko
Priority to JP2021566173A priority patent/JP7385679B2/ja
Publication of WO2020225411A1 publication Critical patent/WO2020225411A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70666—Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system

Definitions

  • the invention relates to a method for three-dimensionally determining an aerial image of a lithography mask as a result of an imaging by means of an anamorphic projection exposure imaging optical unit of a projection expo sure apparatus.
  • the at least one correction term takes account of the illu mination setting influence of the difference between the defocus depend ence of the imaging optical unit of the projection exposure apparatus, on the one hand, and the misalignment dependence of the measurement optical unit of the metrology system, on the other hand.
  • both correction terms are incorporated in the correction of the measurement result obtained in the initial measurement step preferably with different signs. Since the two correction terms incorporate the same reconstructed spectra, errors that occur during the reconstruction of the spectra then can cel one another out owing to the use of the two correction terms.
  • an isomorphic measurement imaging optical unit of the metrol ogy system makes it possible, by means of the determining method, to de termine very precisely the 3D aerial image of the lithography mask, imaged by means of the anamorphic projection exposure imaging optical unit. This can be used to optimize the original structures on the lithography mask in order to improve the imaging performance thereof during the production of semiconductor components, in particular memory chips.
  • the use of an ana morphic measurement imaging optical unit is not necessary. Moreover, a displacement of a field perpendicular to the field plane during the measure ment by means of the measurement imaging optical unit is not necessary either.
  • a plurality of displaceable and/or deformable measurement optical unit components according to Claim 3 for producing the targeted misalignment of the measurement optical unit for predefining in each case the different defocus values increase the number of available degrees of freedom in the minimization of the difference between the wavefront generated by the im aging by the projection exposure imaging optical unit, on the one hand, and the wavefront generated by imaging of the measurement imaging optical unit, which is intended to approximate said wavefront, on the other hand.
  • the effects of a displacement and/or deformation of the respective dis placeable and/or deformable measurement optical unit component on the wavefront are preferably linearly independent of one another.
  • the differ ence to be minimized in the initial measurement step between the wave- fronts of the projection exposure imaging optical unit, on the one hand, and the measurement imaging optical unit, on the other hand, can thus advanta geously be kept small.
  • the different defocus values of the projection expo sure imaging optical unit can thus be simulated well by the measurement optical unit.
  • the measurement imaging optical unit can comprise exactly one displaceable and/or deformable measurement optical unit component, can comprise exactly two displaceable and/or deformable measurement op tical unit components, or can comprise more than two displaceable and/or deformable measurement optical unit components, for example three, four, five or even more displaceable and/or deformable measurement optical unit components, for the targeted misalignment of the measurement imaging optical unit for simulating corresponding defocus values of the projection imaging optical unit.
  • a subdivision of an illumination setting pupil according to Claim 4 im proves an accuracy of the spectra reconstruction.
  • a spectra reconstruction according to Claim 5 improves the accuracy of the spectra ascertained.
  • An aerial image determining method generates 3D aerial image data even in the case of relatively high defocus values, which is advantageous for predicting a stability of the projection exposure opera tion.
  • the range of defocus values covered in the aerial image determining method can deviate from an ideal focus position by more than 20 nm, by more than 30 nm, by more than 50 nm, or else by more than 100 nm.
  • a diffraction spectrum measurement according to Claim 7 enables for ex ample a comparison to the reconstructed spectra. This can make the ascer tainment of the correction term or correction terms more accurate.
  • a phase retrieval algorithm according to Claim 8 has proved worthwhile in connection with the measurement of the diffraction spectra. Information concerning such an algorithm can be found by the person skilled in the art in US 2017/0132782 Al.
  • the advantages of a metrology system according to Claim 9 correspond to those that have already been explained above with reference to the 3D aer ial image determining method.
  • the metrology system can measure a lithog raphy mask provided for projection exposure for producing semiconductor components with an extremely high structure resolution, which for exam ple is better than 30 nm and which in particular can be better than 10 nrn.
  • Fig. 1 schematically shows a projection exposure apparatus for
  • EUV lithography comprising an anamorphic projection exposure imaging optical unit for imaging a lithography mask
  • Fig. 2 schematically shows a metrology system for determining an aerial image of the lithography mask, comprising a measurement imaging optical unit having an isomorphic imaging scale, an aperture stop having an aspect ratio that differs from 1, and at least one displaceable measurement optical unit component;
  • Fig. 3 shows by way of example an intensity distribution of im aging light in an image plane during the imaging of the li thography mask by means of the projection exposure appa ratus according to Fig. 1 in the case of a specific defocus value, that is to say a deviation of a measurement plane from an ideal focal position of the image plane;
  • Fig. 4 shows an imaging light intensity measured by the metrol ogy system according to Fig. 2, wherein the displaceable measurement optical unit component is set such that a de focus value corresponding to the defocus according to Fig. 3 is approximated by means of a targeted misalignment of the measurement imaging optical unit;
  • Fig. 5 shows a sequence of imaging light intensity measurement results in the image plane of the metrology system during the imaging of the reticle with in each case different dis placement positions of the displaceable measurement opti cal unit component, which correspond to different defocus values
  • Fig. 6 schematically shows a procedure in the determination of an aerial image using spectra which represent Fourier transforms of a field of the imaging light into respectively a specific section of a pupil of an illumination setting of an illumination of the lithography mask, wherein this process of determining the spectra is carried out in the manner of a local Hopkins approximation; and
  • Fig. 7 shows the individual contributions in the aerial image de termination, namely at the top right the measured aerial image of the measurement optical unit of the metrology system, at the bottom left as a correction term the calcu lated aerial image, obtained by simulation of an imaging by means of the anamorphic projection exposure imaging optical unit with the inclusion of reconstructed spectra ac cording to Fig. 6, and at the bottom right a further correc tion term in the form of a calculated aerial image, gener ated by simulation of an imaging by means of the measure ment optical unit of the metrology system with the inclu sion of the spectra, wherein the different aerial images are assigned in each case to the same defocus value.
  • Fig. 1 shows, in a sectional view corresponding to a meridional section, a beam path of EUV illumination light or imaging light 1 in a projection ex posure apparatus 2 comprising an anamorphic projection exposure imaging optical unit 3, which is rendered schematically by a box in Fig. 1.
  • the illu mination light 1 is generated in an illumination system 4 of the projection exposure apparatus 2, said illumination system likewise being illustrated schematically as a box.
  • the illumination system 4 includes an EUV light source and an illumination optical unit, neither of which is illustrated in more specific detail.
  • the light source can be a laser plasma source (LPP; laser produced plasma) or a discharge source (DPP; discharge produced plasma).
  • LPP laser plasma source
  • DPP discharge produced plasma
  • a synchrotron-based light source can also be used, for example a free electron laser (FEL).
  • a used wavelength of the illumination light 1 can be in the range of between 5 nm and 30 nm.
  • the illumination light 1 is conditioned in the illumination optical unit of the illumination system 4 such that a specific illumination setting of the il lumination is provided, that is to say a specific illumination angle distribu- tion.
  • Said illumination setting corresponds to a specific intensity distribu tion of the illumination light 1 in an illumination pupil of the illumination optical unit of the illumination system 4.
  • a Cartesian xyz-coordinate system is used hereinafter.
  • the x-axis runs perpen dicularly to the plane of the drawing and out of the latter.
  • the y-axis runs towards the right in Fig. 1.
  • the z-axis runs upwards in Fig. 1.
  • the illumination light 1 illuminates an object field 5 of an object plane 6 of the projection exposure apparatus 2.
  • a structure section of the lithography mask 7 is shown schematically in Fig. 1. Said structure section is illus trated such that it lies in the plane of the drawing in Fig. 1.
  • the actual ar rangement of the lithography mask 7 is perpendicular to the plane of the drawing in Fig. 1 in the object plane 6.
  • the illumination light 1 is reflected from the lithography mask 7, as illus trated schematically in Fig. 1, and enters an entrance pupil 8 of the imaging optical unit 3 in an entrance pupil plane 9.
  • the used entrance pupil 8 of the imaging optical unit 3 has an elliptic border.
  • the illumination or imaging light 1 prop agates between the entrance pupil plane 9 and an exit pupil plane 10.
  • a cir cular exit pupil 11 of the imaging optical unit 3 lies in the exit pupil plane 10.
  • the imaging optical unit 3 is anamorphic and generates the circular exit pupil 11 from the elliptic entrance pupil 8.
  • the imaging optical unit 3 images the object field 5 into an image field 12 in an image plane 13 of the projection exposure apparatus 2.
  • Fig. 1 sche matically shows below the image plane 13 an imaging light intensity distri bution Iscanner, measured in a plane that is spaced apart from the image plane 13 in the z-direction by a value z w , that is to say an imaging light in tensity in the case of a defocus value z w .
  • Another example of such a meas ured imaging light intensity distribution Is canner in the case of the imaging by means of the projection exposure imaging optical unit 3 is shown in Fig. 3.
  • the imaging light intensities I s canner (xy) at the different z- values around the image plane 13 are also referred to as a 3D aerial image of the projection exposure apparatus 2.
  • the projection exposure apparatus 2 is embodied as a scanner.
  • the lithography mask 7, on the one hand, and a wafer arranged in the image plane 13, on the other hand, are scanned synchronously with one another during the projection exposure. As a result, the structure on the lithography mask 7 is transferred to the wafer.
  • Fig. 2 shows a metrology system 14 for measuring the lithography mask 7.
  • the metrology system 14 is used for three-dimensionally determining an aerial image of the lithography mask 7 as an approximation to the actual aerial image Iscanner (xyz) of the projection exposure apparatus 2.
  • Iscanner xyz
  • a measurement imaging optical unit 15 of the metrology system 14 is embodied as an isomorphic optical unit, that is to say as an optical unit having an isomorphic imaging scale.
  • a measure ment entrance pupil 16 is converted into a measurement exit pupil 17 faith fully in terms of shape, apart from a global imaging scale.
  • the metrology system 14 has an elliptic aperture stop 16a in the entrance pupil plane 9.
  • an elliptic aperture stop 16a in a metrology sys tem is known from WO 2016/012 426 Al.
  • Said elliptic aperture stop 16a generates the elliptic measurement entrance pupil 16 of the measurement imaging optical unit 15.
  • the inner boundary of the aperture stop 16a predefines the outer contour of the measurement entrance pupil 16.
  • This elliptic measurement entrance pupil 16 is converted into the ellip tic measurement exit pupil 17.
  • An aspect ratio of the elliptic measurement entrance pupil 16 can be of exactly the same magnitude as that of the ellip tic entrance pupil 8 of the imaging optical unit 3 of the projection exposure apparatus 2.
  • the measurement imaging optical unit 15 has at least one displaceable and/or deformable measurement optical unit component.
  • a measure ment optical unit component is illustrated schematically as a mirror at Mi in Fig. 2.
  • the measurement imaging optical unit 15 can comprise a plurality of mirrors Ml, M2 ... and can comprise a corresponding plurality Mi, Mi+i of such measurement optical unit components.
  • a displaceability and/or manipulability of the displaceable and/or deforma ble measurement optical unit component Mi is indicated schematically by a manipulator lever 18 in Fig. 2.
  • a degree of freedom of the manipulation is indicated as a double-headed arrow a in Fig. 2.
  • a wavefront aberration f(a) results, which, in a manner similar to that in Fig. 1, is also illustrated schematically in Fig. 2.
  • a spatially resolving detection device 20 which can be a CCD camera, is arranged in a measurement plane 19 of the metrology system 14, said measurement plane constituting an image plane of the measurement imag ing optical unit.
  • Fig. 2 shows below the measurement plane 19 a result of an intensity measurement ashed (x, y, D ⁇ ) depending on the respective misalignment Da of the displaceable and/or deformable measurement optical unit component Mi.
  • intensity measurement ashed x, y, D ⁇
  • Imeasured A further example of such an in- tensity measurement Imeasured is shown in Fig. 4.
  • the aerial image of the projection exposure apparatus 2 can be determined from the measurement results of the metrology system 14 in the measure ment plane 19, as is explained in detail below.
  • l is the wavelength of the illumination light 1
  • NA wafer is the im age-side numerical aperture of the imaging optical unit 3 of the projection exposure apparatus 2.
  • This wavefront aberration is determined for the wave vectors k.
  • This wavefront aberration is then written as a development of Zemike functions and this time results in the target Zemike coefficients Z target of this Zemike development of the scanner wavefront aberration in the image plane 13.
  • That manipulator position Da or that combination of manipulator positions Da is then sought which results in a wavefront aberration f of the measurement imaging optical unit 15 whose Zemike development results in Zemike coefficients Z actuai which are the closest to the coefficients Z tar get-
  • an image of the lithogra phy mask 7 is then recorded with the aid of the detection device 20.
  • This method is then repeated for different defocus values, which involves firstly determining the wavefront aberration in the case of this defocus of the imaging optical unit 3 of the projection exposure apparatus 2 and sub sequently determining the set of manipulations Da and the set of Zemike coefficients of the measurement imaging optical unit which best simulate this defocus wavefront aberration.
  • Fig. 5 shows the corresponding results for the intensity measurement I me asured(F z w , Z actual ) in the measurement plane 19.
  • a manipulator setting is thus effected such that the Zernike coefficients Z actuai of the associated wavefront aberration of the measurement imaging optical unit are matched with the least error in each case to the Zemike coefficients Z target of the wavefront aberration of the imaging optical unit of the projection exposure apparatus 2.
  • the 3D aerial image I measured (? r z w , Z actual ) is thus measured as a measurement intensity as a function of a defocus value z w , that is to say over a plurality of defocus measurement planes, each corresponding to a defocus value (z w ), with the aid of the metrology system 14 having the measurement optical unit 15 having an isomorphic numerical aperture and the at least one displaceable measurement optical unit component Mi.
  • This measurement is done using the elliptic aperture stop 16a for the entrance pupil 16 having an aspect ra- tio that differs from 1 by more than 10% in the measurement imaging opti cal unit 15.
  • This measurement is furthermore done under the influence of the targeted misalignment of the measurement imaging optical unit 15 that is respectively assigned to the defocus value.
  • Said targeted misalignment results in a minimization of a difference between a wavefront ⁇ (Z target ) that arises as a result of the imaging of the lithography mask by means of the imaging optical unit 3 of the projection exposure ap paratus 2 and a wavefront (Z actua[ ) that arises as a result of the imaging of the lithography mask 7 by means of the measurement imaging optical unit 15 having a measurement optical unit component Mi displaced in a targeted manner.
  • an approximation known as Hopkins approximation in the lit erature is used. This approximation is based on the assumption that the re spective mask spectrum for two different illumination directions is identi cal apart from a shift.
  • the Hopkins approximation is applied exclusively locally, that is to say for illumination directions that are close to one another. This takes account of the fact that for illumination direc tions that are further apart from one another, a shading on account of a three-dimensional structure of the lithography mask results in different illu mination spectra. Details concerning the Hopkins approximation are ex plained for example in Chapter 15 of the reference book "Advances in FDTD Computational Electrodynamics", A. Taflove (ed.), Artech House, 2013.
  • Fig. 6 shows on the left an exemplary illumination setting, illustrated as an intensity distribution in an illumination pupil plane 21 (cf. Figs 1 and 2) of the illumination system 4.
  • the illumination setting is embodied as a quad- rupole illumination setting, wherein in Fig. 6 the individual illumination poles s are illustrated on the left by si to 0 4 as a function of pupil coordi nates q x , q y .
  • Each of these poles si to 0 4 represents a section of the pupil of the illumination setting.
  • each of these sections si to 0 4 can be assigned a Fourier transform Fi to F 4 as a function of a wave vector k.
  • the entire aerial image can be written as a superimposition of the four spectra with respect to the four illu- mination poles as
  • a(q) a n (q) is the illumination setting subdivided into N sections, that is to say into four sections in the present case;
  • A(k) is an amplitude apodization function of the projection optical unit (1 within the available numerical aperture, 0 outside that);
  • cp(k, Z) is the wavefront aberration of the imaging optical unit, described as a development of Zemike functions with Zemike coefficients Z;
  • a spectrum Fi is reconstructed for each section s ⁇ of the illumination set ting.
  • an initial spectrum or raw spectrum Fi is used as a provisional candidate value, said spectrum being generated raw for ex ample by Fourier transformation of the respective aerial image measure ment.
  • aerial images are calculated from these raw spectra Fi, use being made in each case of the Zemike coefficients that were ascer tained for the respective aerial image measurement in the initial measure ment step.
  • a difference D between the actual aerial image measure ment and the simulation value is then determined:
  • the raw spectra Fi are then matched in each case iteratively in order to minimize the difference D and the difference calculation is optionally iter ated a number of times.
  • the spectra Fi are thus reconstructed as Fourier transforms of a field of the imaging light 1 into respectively a specific section s ⁇ of the pu- pil of the illumination setting of the illumination of the lithography mask 7.
  • This reconstruction incorporates the difference D between an imaging light intensity I me asured ( ⁇ actual) measured by the measurement optical unit 15 using the targeted misalignment of the displaceable measurement optical unit component Mi and a simulation of an imaging light intensity
  • a first correction term I sim (z w Z target , F j N ) is a calculated 3D aerial image in the case of the associated defocus value z w which is gener ated by simulation of an imaging by means of the anamorphic projection exposure imaging optical unit 3 of the projection exposure apparatus 2 with the inclusion of the reconstructed spectra Fi.
  • a second correction term is a calculated 3D aerial image
  • I sim (z w ⁇ actuaL ⁇ F 1 N ) i n the case of the associated defocus value z w which is generated by simulation of an imaging by means of the measurement im- aging optical unit 15 with the inclusion of the reconstructed spectra Fi.
  • the aerial image of the anamorphic projection ex posure imaging optical unit 3, b eamier can then be determined in accordance with the following expression:
  • FIG. 7 illustratively shows the different terms which are incorporated in the calculation of the 3D aerial image S canner in accordance with the formula above.
  • the sought aerial image in the case of the actual wavefront aberrations that are brought about by the anamorphic projection imaging optical unit 3 is represented by a question mark.
  • I measured (? « nZ actual , is illustrated at the top right.
  • the first correction term as a result of simulation on the basis of the projection imaging optical unit 3 I sim is illustrated at the bottom left and the second correction term, that is to say the calculated aerial image on the basis of a simulation of the measurement optical unit I sim is illus trated at the bottom right.
  • 2017/0132782 A 1 can also be used for ascertaining at least one of the cor rection terms.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

Le but de la présente invention est de déterminer de façon tridimensionnelle une image aérienne d'un masque de lithographie (7) en tant que résultat d'intensité de mesure d'une imagerie au moyen d'une unité optique d'imagerie par projection anamorphique se trouvant dans un appareil d'exposition par projection, l'image aérienne 3D à déterminer ayant un front d'onde qui s'écarte de façon prédéfinie d'une valeur de défocalisation, la procédure suivante étant adoptée pour y parvenir : Dans une étape de mesure initiale, une image aérienne 3D est mesurée dans une pluralité de situations de fonctionnement, chacune de ces situations correspondant à une valeur de défocalisation. Cette étape est effectuée à l'aide d'un système de métrologie (14) doté d'une unité optique de mesure ayant une unité optique d'imagerie de mesure (15) dotée d'une ouverture numérique isomorphique et d'au moins un composant d'unité optique de mesure déplaçable et/ou déformable (Mi). La mesure est effectuée à l'aide d'un diaphragme (16a) ayant un rapport d'aspect qui diffère de 1 et qui est influencé par un désalignement cible (Δα) de l'unité optique d'imagerie de mesure, correspondant dans chaque cas à une situation de fonctionnement. Le procédé de détermination comprend en outre la reconstruction de spectres (F 1... N) en tant que transformées de Fourier d'un champ de lumière d'imagerie (1), chacun dans une section spécifique d'une pupille d'un réglage d'éclairage d'un éclairage du masque de lithographie (7). Le résultat de mesure (Imesuré) obtenu dans l'étape de mesure initiale est corrigé dans le cas de chaque valeur de défocalisation (zw) au moyen de termes de correction qui comprennent les spectres reconstruits. Il en résulte une détermination hautement précise d'image aérienne en 3D.
PCT/EP2020/062834 2019-05-08 2020-05-08 Procédé de détermination tridimensionnelle d'une image aérienne d'un masque de lithographie WO2020225411A1 (fr)

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KR1020217040136A KR20220006584A (ko) 2019-05-08 2020-05-08 리소그래피 마스크의 에어리얼 이미지를 3차원적으로 결정하는 방법
JP2021566173A JP7385679B2 (ja) 2019-05-08 2020-05-08 リソグラフィマスクの空間像を３次元的に決定するための方法

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DE102019206651.8A DE102019206651B4 (de) 2019-05-08 2019-05-08 Verfahren zum dreidimensionalen Bestimmen eines Luftbildes einer Lithographiemaske

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Cited By (6)

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Publication number Priority date Publication date Assignee Title
WO2022200173A1 (fr) * 2021-03-24 2022-09-29 Carl Zeiss Smt Gmbh Système optique pour appareil d'exposition par projection lithographique
JP2022184816A (ja) * 2021-05-31 2022-12-13 カール・ツァイス・エスエムティー・ゲーエムベーハー 測定される入射瞳内で照明光によって照明されたときの光学系の結像品質を決定するための方法
JP2023064096A (ja) * 2021-10-25 2023-05-10 カール・ツァイス・エスエムティー・ゲーエムベーハー 結像光学製造システムの目標波面を再生する方法、およびその方法を実施する計測システム
WO2023104687A1 (fr) * 2021-12-06 2023-06-15 Carl Zeiss Smt Gmbh Procédé d'optimisation d'une forme de diaphragme de pupille pour simuler des propriétés d'éclairage et de formation d'images d'un système de production optique lors de l'éclairage et de la formation d'images d'un objet au moyen d'un système de mesure optique
CN116336953A (zh) * 2023-05-30 2023-06-27 武汉工程大学 一种穿孔模型半径、深度测量系统及方法
DE102022212750A1 (de) 2022-11-29 2024-05-29 Carl Zeiss Smt Gmbh Verfahren zum dreidimensionalen Bestimmen eines Luftbildes eines Messobjekts mithilfe eines Metrologiesystems sowie Metrologiesystem zur Durchführung des Bestimmungsverfahrens

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Publication number Priority date Publication date Assignee Title
DE102021213828B4 (de) 2021-12-06 2023-07-27 Carl Zeiss Smt Gmbh Verfahren zum Ziel-Betreiben einer EUV-Strahlungsquelle

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WO2016012425A2 (fr) 2014-07-22 2016-01-28 Carl Zeiss Smt Gmbh Optique de reproduction pour système météorologique

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WO2022200173A1 (fr) * 2021-03-24 2022-09-29 Carl Zeiss Smt Gmbh Système optique pour appareil d'exposition par projection lithographique
JP2022184816A (ja) * 2021-05-31 2022-12-13 カール・ツァイス・エスエムティー・ゲーエムベーハー 測定される入射瞳内で照明光によって照明されたときの光学系の結像品質を決定するための方法
JP2023064096A (ja) * 2021-10-25 2023-05-10 カール・ツァイス・エスエムティー・ゲーエムベーハー 結像光学製造システムの目標波面を再生する方法、およびその方法を実施する計測システム
JP7477577B2 (ja) 2021-10-25 2024-05-01 カール・ツァイス・エスエムティー・ゲーエムベーハー 結像光学製造システムの目標波面を再生する方法、およびその方法を実施する計測システム
WO2023104687A1 (fr) * 2021-12-06 2023-06-15 Carl Zeiss Smt Gmbh Procédé d'optimisation d'une forme de diaphragme de pupille pour simuler des propriétés d'éclairage et de formation d'images d'un système de production optique lors de l'éclairage et de la formation d'images d'un objet au moyen d'un système de mesure optique
DE102022212750A1 (de) 2022-11-29 2024-05-29 Carl Zeiss Smt Gmbh Verfahren zum dreidimensionalen Bestimmen eines Luftbildes eines Messobjekts mithilfe eines Metrologiesystems sowie Metrologiesystem zur Durchführung des Bestimmungsverfahrens
WO2024115173A1 (fr) 2022-11-29 2024-06-06 Carl Zeiss Smt Gmbh Procédé de détermination tridimensionnelle d'image aérienne d'objet de mesure à l'aide d'un système de métrologie et système de métrologie pour la mise en œuvre du procédé de détermination
CN116336953A (zh) * 2023-05-30 2023-06-27 武汉工程大学 一种穿孔模型半径、深度测量系统及方法
CN116336953B (zh) * 2023-05-30 2023-08-11 武汉工程大学 一种穿孔模型半径、深度测量系统及方法

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