WO2020220551A1 - Display panel and manufacturing method therefor, and display module - Google Patents

Display panel and manufacturing method therefor, and display module Download PDF

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Publication number
WO2020220551A1
WO2020220551A1 PCT/CN2019/104634 CN2019104634W WO2020220551A1 WO 2020220551 A1 WO2020220551 A1 WO 2020220551A1 CN 2019104634 W CN2019104634 W CN 2019104634W WO 2020220551 A1 WO2020220551 A1 WO 2020220551A1
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layer
light
optical enhancement
emitting
unit
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PCT/CN2019/104634
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French (fr)
Chinese (zh)
Inventor
史婷
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深圳市华星光电半导体显示技术有限公司
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Publication of WO2020220551A1 publication Critical patent/WO2020220551A1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • This application relates to the field of display, in particular to a display panel, a manufacturing method thereof, and a display module.
  • OLED Organic Light-Emitting Diode
  • the light-emitting layer is usually arranged between the total reflection and the semi-reflective structure to form a microcavity effect, so as to improve the luminous efficiency of the light-emitting device.
  • the enhancement effect in the microcavity effect is different, so the light color of the OLED device cannot be improved, and the light coupling efficiency of the OLED device can be reduced.
  • the application provides a display panel, a manufacturing method thereof, and a display module to improve the light color of the existing OLED device.
  • the present application provides a manufacturing method of a display panel, which includes:
  • the manufacturing method of the display panel further includes:
  • An optical enhancement layer is formed between the anode layer and the cathode layer, and the optical enhancement layer has a three-dimensional relief grating structure to enhance the luminous efficiency of the light-emitting layer.
  • the optical enhancement layer is located between the light-emitting layer and the anode layer.
  • the optical enhancement layer is located between the light-emitting layer and the cathode layer.
  • the optical enhancement layer includes a first optical enhancement unit, a second optical enhancement unit, and a third optical enhancement unit;
  • the materials of the first optical enhancement unit, the second optical enhancement unit, and the third optical enhancement unit are different from each other.
  • the light-emitting layer includes a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit;
  • the first light-emitting unit corresponds to the first optical enhancement unit
  • the second light emitting unit corresponds to the second optical enhancement unit
  • the third light emitting unit corresponds to the third optical enhancement unit.
  • the step of forming an optical enhancement layer between the anode layer and the cathode layer includes:
  • the double-beam interference laser system is used to irradiate the azobenzene compound film, so that the azobenzene compound film forms the optical enhancement layer with an ordered three-dimensional relief grating structure.
  • the azobenzene compound includes at least one functional group with hole transport and at least one functional group for enhancing its solubility in organic solvents.
  • the application also proposes a display panel, which includes a substrate, a light-emitting device layer on the substrate, and an encapsulation layer on the light-emitting device layer;
  • the light-emitting device layer includes an anode layer, a cathode layer, a light-emitting layer and an optical enhancement layer located between the anode layer and the cathode layer, and the optical enhancement layer is a three-dimensional relief grating structure to enhance the light-emitting layer The luminous efficiency.
  • the optical enhancement layer is located between the light-emitting layer and the anode layer.
  • the optical enhancement layer is located between the light-emitting layer and the cathode layer.
  • the optical enhancement layer includes a first optical enhancement unit, a second optical enhancement unit, and a third optical enhancement unit;
  • the materials of the first optical enhancement unit, the second optical enhancement unit, and the third optical enhancement unit are different from each other.
  • the light-emitting layer includes a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit;
  • the first light-emitting unit corresponds to the first optical enhancement unit
  • the second light emitting unit corresponds to the second optical enhancement unit
  • the third light emitting unit corresponds to the third optical enhancement unit.
  • the material of the optical increase layer includes an azobenzene compound
  • the azobenzene compound includes at least one functional group with hole transport and at least one functional group for enhancing its solubility in organic solvents.
  • the display module includes a display panel and a polarizing layer and a cover layer on the display panel.
  • the display panel includes a substrate and is located on the substrate.
  • the light-emitting device layer includes an anode layer, a cathode layer, a light-emitting layer and an optical enhancement layer located between the anode layer and the cathode layer, and the optical enhancement layer is a three-dimensional relief grating structure to enhance the light-emitting layer The luminous efficiency.
  • the optical enhancement layer is located between the light-emitting layer and the anode layer.
  • the optical enhancement layer is located between the light-emitting layer and the cathode layer.
  • the optical enhancement layer includes a first optical enhancement unit, a second optical enhancement unit, and a third optical enhancement unit;
  • the materials of the first optical enhancement unit, the second optical enhancement unit, and the third optical enhancement unit are different from each other.
  • the light-emitting layer includes a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit;
  • the first light-emitting unit corresponds to the first optical enhancement unit
  • the second light emitting unit corresponds to the second optical enhancement unit
  • the third light emitting unit corresponds to the third optical enhancement unit.
  • the material of the optical increase layer includes an azobenzene compound
  • the azobenzene compound includes at least one functional group with hole transport and at least one functional group for enhancing its solubility in organic solvents.
  • different optical enhancement units are arranged in light-emitting units of different colors, and the red, green, and blue light emitted by the light-emitting units are adjusted synchronously to improve the light color of the OLED device and increase the light-out coupling efficiency of the OLED device.
  • FIG. 1 is a step diagram of a manufacturing method of a display panel of this application
  • 2A ⁇ 2D are process steps diagrams of the manufacturing method of the display panel of this application.
  • FIG. 3 is the first structure diagram of the display panel of this application.
  • FIG. 4 is a second structure diagram of the display panel of this application.
  • FIG. 1 is a step diagram of a manufacturing method of the display panel 100 of this application.
  • FIGS. 2A to 2D are process steps diagrams of the manufacturing method of the display panel 100 of this application.
  • the manufacturing method of the display panel 100 includes:
  • the substrate 10 may be an array substrate.
  • the substrate 10 includes a substrate and a thin film transistor layer on the substrate.
  • the raw material of the substrate may be one of a glass substrate, a quartz substrate, a resin substrate, and the like.
  • the material of the flexible substrate may be PI (polyimide).
  • the thin film transistor layer includes a plurality of thin film transistor units.
  • the thin film transistor unit may be an etching barrier type, a back channel etching type, a top gate thin film transistor type, etc., which is not specifically limited in this embodiment.
  • This application takes the top-gate thin film transistor type as an example for description.
  • the thin film transistor unit may include: a light shielding layer, a buffer layer, an active layer, a gate insulating layer, a gate electrode, an inter-insulating layer, a source and drain electrode, a passivation layer, and a flat layer.
  • the anode layer 20 is formed on the flat layer.
  • the anode layer 20 is patterned to form a plurality of anodes. 2A, the anode layer 20 includes a first anode 201, a second anode 202, and a third anode 203.
  • the anode layer 20 is mainly used to provide holes for absorbing electrons.
  • the light-emitting layer 30 is divided into a plurality of light-emitting units by a pixel definition layer (not shown).
  • the light-emitting layer 30 includes a first light-emitting unit 301, a second light-emitting unit 302, and a third light-emitting unit 303.
  • the first light emitting unit 301 is located on the first anode 201.
  • the second light emitting unit 302 is located on the second anode 202.
  • the third light emitting unit 303 is located on the third anode 203.
  • the first light emitting unit 301, the second light emitting unit 302, and the third light emitting unit 303 are any one of a red light emitting unit, a green light emitting unit, and a blue light emitting unit.
  • the color of the light-emitting units corresponding to the first light-emitting unit 301, the second light-emitting unit 302, and the third light-emitting unit 303 are different.
  • the first light emitting unit 301 may be a red light emitting unit.
  • the second light emitting unit 302 may be a green light emitting unit.
  • the third light emitting unit 303 may be a blue light emitting unit.
  • the cathode layer 40 covers the light emitting layer 30.
  • the cathode layer 40 is used to provide electrons absorbed by the holes.
  • the encapsulation layer 50 may be a thin-film encapsulation layer 50, which is mainly used to block water and oxygen and prevent the organic light-emitting layer 30 from being corroded by external water vapor.
  • the encapsulation layer 50 may be formed by alternately stacking at least one organic layer and at least one inorganic layer.
  • the organic layer is usually located in the middle of the encapsulation layer 50, and the inorganic layer is located on both sides of the encapsulation layer 50, wrapping the organic layer in the middle.
  • the method further includes the following steps:
  • An optical enhancement layer 60 is formed between the anode layer 20 and the cathode layer 40.
  • the optical enhancement layer 60 is a three-dimensional relief grating structure to enhance the luminous efficiency of the light-emitting layer 30.
  • the anode layer 20 may be a transparent or non-transparent electrode.
  • anode layer 20 is a transparent electrode
  • a reflective layer is also provided between the anode layer 20 and the substrate 10 to reflect the light generated by the light-emitting layer 30 from the top.
  • the anode layer 20 acts as a reflective layer to reflect the light generated by the light-emitting layer 30 from the top.
  • the cathode layer 40 may be a semi-transparent electrode.
  • the semi-transparent cathode and the above two total reflection structures form a microcavity effect to enhance the luminous efficiency of the OLED device.
  • the material of the anode layer 20 may be indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO) or At least one of zinc aluminum oxide (AZO).
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • ZnO zinc oxide
  • In2O3 indium oxide
  • IGO indium gallium oxide
  • AZO zinc aluminum oxide
  • the optical enhancement layer 60 is located between the anode layer 20 and the light-emitting layer 30.
  • the preparation of the optical enhancement layer 60 is performed before step S20.
  • a solution of azobenzene compounds is coated on the anode by solution processing methods such as spin coating, inkjet printing, or blade coating, and prepared into azobenzenes Compound film.
  • the double-beam interference laser system is used to irradiate the azobenzene compound film, so that the azobenzene compound film forms an optical enhancement layer 60 with an ordered three-dimensional relief grating structure.
  • the azobenzene compound is an azobenzene polymer or an azobenzene small molecule compound.
  • the azobenzene compound should contain at least one hole-transporting functional group, such as carbazole, aniline or thiophene. And, it contains at least one functional group that can be used to enhance its solubility in common organic solvents, such as a short-chain alkyl chain.
  • the optical enhancement layer 60 includes a first optical enhancement unit 601, a second optical enhancement unit 602, and a third optical enhancement unit 603.
  • the first light emitting unit 301 corresponds to the first optical enhancement unit 601;
  • the second light emitting unit 302 corresponds to the second optical enhancement unit 602;
  • the third light emitting unit 303 corresponds to the third optical enhancement unit 603.
  • optical increase units correspond to light-emitting units of different colors, compared with red light and green light, blue light has greater light intensity and energy, red light has the smallest light intensity, and green light has the lowest light intensity. Energy lies in between. Since the enhancement effects of the optical enhancement layer 60 on different colors of light are inconsistent, in the selection of materials, the materials of the first optical enhancement unit 601, the second optical enhancement unit 602, and the third optical enhancement unit 603 Each is different.
  • This application selects different azobenzene derivatives as the material of the enhancement unit corresponding to the red, green, and blue light, and adjusts the red, green, and blue light emitted by the light-emitting unit synchronously to improve the light color of the OLED device. Improve the output coupling efficiency of OLED devices.
  • the anode layer 20 is a semi-transparent electrode
  • the cathode layer 40 is a total reflection electrode
  • the light emitted by the light-emitting layer 30 is totally reflected by the cathode layer 40 to the anode, and exits the display panel 100 through the substrate 10.
  • the optical enhancement layer 60 is located between the cathode layer 40 and the light-emitting layer 30.
  • the preparation of the optical enhancement layer 60 is performed before step S30.
  • the preparation method of the optical enhancement layer 60 is the same as that of the top-emitting light, which will not be repeated here.
  • FIG. 3 is a first structure diagram of the display panel 100 of the present application.
  • the display panel 100 includes a substrate 10, a light-emitting device layer on the substrate 10, and an encapsulation layer 50 on the light-emitting device layer.
  • the substrate 10 includes a substrate and a thin film transistor layer on the substrate.
  • the raw material of the substrate may be one of a glass substrate, a quartz substrate, a resin substrate, and the like.
  • the material of the flexible substrate may be PI (polyimide).
  • the thin film transistor layer includes a plurality of thin film transistor units.
  • the thin film transistor unit may be an etch barrier type, a back channel etch type, or a top gate thin film transistor type, etc., which is not specifically limited in this embodiment.
  • This application takes the top gate thin film transistor type as an example for description.
  • the thin film transistor unit may include: a light shielding layer, a buffer layer, an active layer, a gate insulating layer, a gate electrode, an inter-insulating layer, a source and drain electrode, a passivation layer, and a flat layer.
  • the light emitting device layer includes an anode layer 20, a cathode layer 40, and a light emitting layer 30 located between the anode layer 20 and the cathode layer 40.
  • the anode layer 20 is formed on the flat layer.
  • the anode layer 20 is patterned to form a plurality of anodes. As shown in FIG. 3, the anode layer 20 includes a first anode 201, a second anode 202 and a third anode 203.
  • the anode layer 20 is mainly used to provide holes for absorbing electrons.
  • the light emitting layer 30 is located on the anode layer 20.
  • the light-emitting layer 30 is divided into a plurality of light-emitting units by a pixel definition layer (not shown).
  • the light-emitting layer 30 includes a first light-emitting unit 301, a second light-emitting unit 302, and a third light-emitting unit 303.
  • the first light emitting unit 301 is located on the first anode 201.
  • the second light emitting unit 302 is located on the second anode 202.
  • the third light emitting unit 303 is located on the third anode 203.
  • the first light emitting unit 301, the second light emitting unit 302, and the third light emitting unit 303 are any one of a red light emitting unit, a green light emitting unit, and a blue light emitting unit.
  • the color of the light-emitting units corresponding to the first light-emitting unit 301, the second light-emitting unit 302, and the third light-emitting unit 303 are different.
  • the first light emitting unit 301 may be a red light emitting unit.
  • the second light emitting unit 302 may be a green light emitting unit.
  • the third light emitting unit 303 may be a blue light emitting unit.
  • the cathode layer 40 covers the light emitting layer 30.
  • the cathode layer 40 is used to provide electrons absorbed by the holes.
  • the encapsulation layer 50 may be a thin-film encapsulation layer 50, which is mainly used to block water and oxygen, and prevent external moisture from corroding the organic light-emitting layer 30.
  • the encapsulation layer 50 may be formed by alternately stacking at least one organic layer and at least one inorganic layer.
  • the organic layer is usually located in the middle of the encapsulation layer 50, and the inorganic layer is located on both sides of the encapsulation layer 50, wrapping the organic layer in the middle.
  • the light-emitting device layer further includes:
  • the optical enhancement layer 60 is located between the anode layer 20 and the cathode layer 40.
  • the optical enhancement layer 60 is a three-dimensional relief grating structure to enhance the luminous efficiency of the light-emitting layer 30.
  • the anode layer 20 may be a transparent or non-transparent electrode.
  • anode layer 20 is a transparent electrode
  • a reflective layer is also provided between the anode layer 20 and the substrate 10 to reflect the light generated by the light-emitting layer 30 from the top.
  • the anode layer 20 acts as a reflective layer to reflect the light generated by the light-emitting layer 30 from the top.
  • the cathode layer 40 may be a semi-transparent electrode.
  • the semi-transparent cathode and the above two total reflection structures form a microcavity effect to enhance the luminous efficiency of the OLED device.
  • the material of the anode layer 20 may be indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO) or At least one of zinc aluminum oxide (AZO).
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • ZnO zinc oxide
  • In2O3 indium oxide
  • IGO indium gallium oxide
  • AZO zinc aluminum oxide
  • the optical enhancement layer 60 is located between the anode layer 20 and the light-emitting layer 30.
  • a solution of azobenzene compounds is coated on the anode by solution processing methods such as spin coating, inkjet printing, or blade coating, and prepared into azobenzenes Compound film.
  • the double-beam interference laser system is used to irradiate the azobenzene compound film, so that the azobenzene compound film forms an optical enhancement layer 60 with an ordered three-dimensional relief grating structure.
  • the azobenzene compound is an azobenzene polymer or an azobenzene small molecule compound.
  • the azobenzene compound should contain at least one hole-transporting functional group, such as carbazole, aniline or thiophene. And, it contains at least one functional group that can be used to enhance its solubility in common organic solvents, such as a short-chain alkyl chain.
  • the optical enhancement layer 60 includes a first optical enhancement unit 601, a second optical enhancement unit 602 and a third optical enhancement unit 603.
  • the first light emitting unit 301 corresponds to the first optical enhancement unit 601;
  • the second light emitting unit 302 corresponds to the second optical enhancement unit 602;
  • the third light emitting unit 303 corresponds to the third optical enhancement unit 603.
  • optical increase units correspond to light-emitting units of different colors, compared with red light and green light, blue light has greater light intensity and energy, red light has the smallest light intensity, and green light has the lowest light intensity. Energy lies in between. Since the enhancement effects of the optical enhancement layer 60 on different colors of light are inconsistent, in the selection of materials, the materials of the first optical enhancement unit 601, the second optical enhancement unit 602, and the third optical enhancement unit 603 Each is different.
  • This application selects different azobenzene derivatives as the material of the enhancement unit corresponding to the red, green, and blue light, and adjusts the red, green, and blue light emitted by the light-emitting unit synchronously to improve the light color of the OLED device. Improve the output coupling efficiency of OLED devices.
  • FIG. 4 is a second structure diagram of the display panel 100 of this application.
  • the anode layer 20 is a semi-transparent electrode
  • the cathode layer 40 is a total reflection electrode
  • the light emitted by the light-emitting layer 30 is totally reflected by the cathode layer 40 to the anode, and exits the display panel 100 through the substrate 10.
  • the optical enhancement layer 60 is located between the cathode layer 40 and the light-emitting layer 30.
  • the preparation method of the optical enhancement layer 60 is the same as that of the top-emitting light, which will not be repeated here.
  • the application also proposes a display module, which includes the above-mentioned display panel, a polarizing layer on the display panel, and a cover layer, the working principle of the display module and the display panel The same or similar, this application will not repeat them.
  • the display panel includes a substrate and a light-emitting device layer on the substrate; the light-emitting device layer includes the anode layer and the cathode layer Between the optical enhancement layer.
  • the optical enhancement layer is a three-dimensional embossed grating structure, and includes different optical enhancement units corresponding to light-emitting units of different colors to enhance the luminous efficiency of the light-emitting layer.
  • different optical enhancement units are arranged in light-emitting units of different colors, and the red, green, and blue light emitted by the light-emitting units are adjusted synchronously to improve the light color of the OLED device and increase the light-out coupling efficiency of the OLED device.

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Abstract

A display panel (100) and a manufacturing method therefor, and a display module. The display panel (100) comprises a substrate (10) and a light-emitting device layer located on the substrate (10). The light-emitting device layer comprises an optical enhancement layer (60) located between an anode layer (20) and a cathode layer (40). The optical enhancement layer (60) is a three-dimensional relief grating structure, and comprises different optical enhancement units (601-603) corresponding to light-emitting units (301-303) of different colors to enhance the luminous efficiency of the light-emitting layer (30).

Description

显示面板及其制作方法、显示模组Display panel, manufacturing method thereof, and display module 技术领域Technical field
本申请涉及显示领域，特别涉及一种显示面板及其制作方法、显示模组。This application relates to the field of display, in particular to a display panel, a manufacturing method thereof, and a display module.
背景技术Background technique
在平板显示技术中，有机发光二极管（Organic Light-Emitting Diode，OLED）显示器具有轻薄、主动发光、响应速度快、可视角大、色域宽、亮度高和功耗低等众多优点，逐渐成为继液晶显示器后的第三代显示技术。In flat panel display technology, Organic Light-Emitting Diode (OLED) displays have many advantages such as thinness, active light emission, fast response speed, large viewing angle, wide color gamut, high brightness and low power consumption, and have gradually become a successor. The third-generation display technology after the liquid crystal display.
在现有的OLED器件的制备过程中，通常将发光层设置于全反射和半反射结构之间形成微腔效应，以提高发光器件的发光效率。但对于不同颜色的光，在微腔效应内的增强效应各不相同，因此无法改善OLED器件的光色，降低OLED器件的出光耦合效率。In the manufacturing process of the existing OLED device, the light-emitting layer is usually arranged between the total reflection and the semi-reflective structure to form a microcavity effect, so as to improve the luminous efficiency of the light-emitting device. However, for different colors of light, the enhancement effect in the microcavity effect is different, so the light color of the OLED device cannot be improved, and the light coupling efficiency of the OLED device can be reduced.
技术问题technical problem
本申请提供了一种显示面板及其制作方法、显示模组，以改善现有OLED器件发光的光色。The application provides a display panel, a manufacturing method thereof, and a display module to improve the light color of the existing OLED device.
技术解决方案Technical solutions
本申请提供一种显示面板的制作方法，其包括：The present application provides a manufacturing method of a display panel, which includes:
S10、提供一衬底，在所述衬底上形成阳极层；S10, providing a substrate, and forming an anode layer on the substrate;
S20、在所述阳极层形成发光层；S20, forming a light-emitting layer on the anode layer;
S30、在所述发光层上形成阴极层；S30, forming a cathode layer on the light-emitting layer;
S40、在所述阴极层上形成封装层；S40, forming an encapsulation layer on the cathode layer;
其中，所述显示面板的制作方法还包括：Wherein, the manufacturing method of the display panel further includes:
在所述阳极层与所述阴极层之间形成光学增强层，所述光学增强层为三维浮雕光栅结构，以增强所述发光层的发光效率。An optical enhancement layer is formed between the anode layer and the cathode layer, and the optical enhancement layer has a three-dimensional relief grating structure to enhance the luminous efficiency of the light-emitting layer.
在本申请的制作方法中，In the production method of this application,
所述光学增强层位于所述发光层与所述阳极层之间。The optical enhancement layer is located between the light-emitting layer and the anode layer.
在本申请的制作方法中，In the production method of this application,
所述光学增强层位于所述发光层与所述阴极层之间。The optical enhancement layer is located between the light-emitting layer and the cathode layer.
在本申请的制作方法中，所述光学增强层包括第一光学增强单元、第二光学增强单元及第三光学增强单元；In the manufacturing method of the present application, the optical enhancement layer includes a first optical enhancement unit, a second optical enhancement unit, and a third optical enhancement unit;
所述第一光学增强单元、所述第二光学增强单元及所述第三光学增强单元的材料各不相同。The materials of the first optical enhancement unit, the second optical enhancement unit, and the third optical enhancement unit are different from each other.
在本申请的制作方法中，所述发光层包括第一发光单元、第二发光单元以及第三发光单元；In the manufacturing method of the present application, the light-emitting layer includes a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit;
所述第一发光单元与所述第一光学增强单元对应；The first light-emitting unit corresponds to the first optical enhancement unit;
所述第二发光单元与所述第二光学增强单元对应；The second light emitting unit corresponds to the second optical enhancement unit;
所述第三发光单元与所述第三光学增强单元对应。The third light emitting unit corresponds to the third optical enhancement unit.
在本申请的制作方法中，在所述阳极层与所述阴极层之间形成光学增强层的步骤包括：In the manufacturing method of the present application, the step of forming an optical enhancement layer between the anode layer and the cathode layer includes:
在所述阳极层上涂布偶氮苯类化合物的溶液，以形成偶氮苯类化合物薄膜；Coating the azobenzene compound solution on the anode layer to form an azobenzene compound film;
利用双光束干涉激光系统照射所述偶氮苯类化合物薄膜，使所述偶氮苯类化合物薄膜形成具有有序的三维浮雕光栅结构的所述光学增强层。The double-beam interference laser system is used to irradiate the azobenzene compound film, so that the azobenzene compound film forms the optical enhancement layer with an ordered three-dimensional relief grating structure.
在本申请的制作方法中，In the production method of this application,
所述偶氮苯类化合物包括至少一种具有传输空穴的功能基团、及至少一种用于增强其在有机溶剂中溶解性的功能基团。The azobenzene compound includes at least one functional group with hole transport and at least one functional group for enhancing its solubility in organic solvents.
本申请还提出了一种显示面板，其包括衬底、位于所述衬底上的发光器件层、及位于所述发光器件层上的封装层；The application also proposes a display panel, which includes a substrate, a light-emitting device layer on the substrate, and an encapsulation layer on the light-emitting device layer;
所述发光器件层包括阳极层、阴极层、及位于所述阳极层与所述阴极层之间的发光层与光学增强层，所述光学增强层为三维浮雕光栅结构，以增强所述发光层的发光效率。The light-emitting device layer includes an anode layer, a cathode layer, a light-emitting layer and an optical enhancement layer located between the anode layer and the cathode layer, and the optical enhancement layer is a three-dimensional relief grating structure to enhance the light-emitting layer The luminous efficiency.
在本申请的显示面板中，In the display panel of this application,
所述光学增强层位于所述发光层与所述阳极层之间。The optical enhancement layer is located between the light-emitting layer and the anode layer.
在本申请的显示面板中，In the display panel of this application,
所述光学增强层位于所述发光层与所述阴极层之间。The optical enhancement layer is located between the light-emitting layer and the cathode layer.
在本申请的显示面板中，所述光学增强层包括第一光学增强单元、第二光学增强单元及第三光学增强单元；In the display panel of the present application, the optical enhancement layer includes a first optical enhancement unit, a second optical enhancement unit, and a third optical enhancement unit;
所述第一光学增强单元、所述第二光学增强单元及所述第三光学增强单元的材料各不相同。The materials of the first optical enhancement unit, the second optical enhancement unit, and the third optical enhancement unit are different from each other.
在本申请的显示面板中，所述发光层包括第一发光单元、第二发光单元以及第三发光单元；In the display panel of the present application, the light-emitting layer includes a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit;
所述第一发光单元与所述第一光学增强单元对应；The first light-emitting unit corresponds to the first optical enhancement unit;
所述第二发光单元与所述第二光学增强单元对应；The second light emitting unit corresponds to the second optical enhancement unit;
所述第三发光单元与所述第三光学增强单元对应。The third light emitting unit corresponds to the third optical enhancement unit.
在本申请的显示面板中，In the display panel of this application,
所述光学增加层的材料包括偶氮苯类化合物；The material of the optical increase layer includes an azobenzene compound;
所述偶氮苯类化合物包括至少一种具有传输空穴的功能基团、及至少一种用于增强其在有机溶剂中溶解性的功能基团。The azobenzene compound includes at least one functional group with hole transport and at least one functional group for enhancing its solubility in organic solvents.
本申请还提出了一种显示模组，所述显示模组包括显示面板及位于所述显示面板上的偏光层、盖板层，其中，所述显示面板包括衬底、位于所述衬底上的发光器件层、及位于所述发光器件层上的封装层；This application also proposes a display module. The display module includes a display panel and a polarizing layer and a cover layer on the display panel. The display panel includes a substrate and is located on the substrate. The light emitting device layer and the encapsulation layer on the light emitting device layer;
所述发光器件层包括阳极层、阴极层、及位于所述阳极层与所述阴极层之间的发光层与光学增强层，所述光学增强层为三维浮雕光栅结构，以增强所述发光层的发光效率。The light-emitting device layer includes an anode layer, a cathode layer, a light-emitting layer and an optical enhancement layer located between the anode layer and the cathode layer, and the optical enhancement layer is a three-dimensional relief grating structure to enhance the light-emitting layer The luminous efficiency.
在本申请的显示模组中，In the display module of this application,
所述光学增强层位于所述发光层与所述阳极层之间。The optical enhancement layer is located between the light-emitting layer and the anode layer.
在本申请的显示模组中，In the display module of this application,
所述光学增强层位于所述发光层与所述阴极层之间。The optical enhancement layer is located between the light-emitting layer and the cathode layer.
在本申请的显示模组中，所述光学增强层包括第一光学增强单元、第二光学增强单元及第三光学增强单元；In the display module of the present application, the optical enhancement layer includes a first optical enhancement unit, a second optical enhancement unit, and a third optical enhancement unit;
所述第一光学增强单元、所述第二光学增强单元及所述第三光学增强单元的材料各不相同。The materials of the first optical enhancement unit, the second optical enhancement unit, and the third optical enhancement unit are different from each other.
在本申请的显示模组中，所述发光层包括第一发光单元、第二发光单元以及第三发光单元；In the display module of the present application, the light-emitting layer includes a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit;
所述第一发光单元与所述第一光学增强单元对应；The first light-emitting unit corresponds to the first optical enhancement unit;
所述第二发光单元与所述第二光学增强单元对应；The second light emitting unit corresponds to the second optical enhancement unit;
所述第三发光单元与所述第三光学增强单元对应。The third light emitting unit corresponds to the third optical enhancement unit.
在本申请的显示模组中，In the display module of this application,
所述光学增加层的材料包括偶氮苯类化合物；The material of the optical increase layer includes an azobenzene compound;
所述偶氮苯类化合物包括至少一种具有传输空穴的功能基团、及至少一种用于增强其在有机溶剂中溶解性的功能基团。The azobenzene compound includes at least one functional group with hole transport and at least one functional group for enhancing its solubility in organic solvents.
有益效果Beneficial effect
本申请通过在不同颜色的发光单元设置不同的光学增强单元，对发光单元发出的红、绿、及蓝色光线同步调节，改善OLED器件的光色，提高OLED器件的出光耦合效率。In the present application, different optical enhancement units are arranged in light-emitting units of different colors, and the red, green, and blue light emitted by the light-emitting units are adjusted synchronously to improve the light color of the OLED device and increase the light-out coupling efficiency of the OLED device.
附图说明Description of the drawings
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to explain the embodiments or the technical solutions in the prior art more clearly, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are merely inventions For some embodiments, those of ordinary skill in the art can obtain other drawings based on these drawings without creative work.
图1为本申请显示面板制作方法的步骤图；FIG. 1 is a step diagram of a manufacturing method of a display panel of this application;
图2A~2D为本申请显示面板制作方法的工艺步骤图；2A~2D are process steps diagrams of the manufacturing method of the display panel of this application;
图3为本申请显示面板的第一种结构图；FIG. 3 is the first structure diagram of the display panel of this application;
图4为本申请显示面板的第二种结构图。FIG. 4 is a second structure diagram of the display panel of this application.
本发明的实施方式Embodiments of the invention
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。The description of the following embodiments refers to the attached drawings to illustrate specific embodiments that can be implemented in this application. The directional terms mentioned in this application, such as [Up], [Down], [Front], [Back], [Left], [Right], [Inner], [Outer], [Side], etc., are for reference only The direction of the additional schema. Therefore, the directional terms used are used to illustrate and understand the application, rather than to limit the application. In the figure, units with similar structures are indicated by the same reference numerals.
请参阅图1，图1为本申请显示面板100制作方法的步骤图。Please refer to FIG. 1, which is a step diagram of a manufacturing method of the display panel 100 of this application.
请参阅图2A~2D，图2A~2D为本申请显示面板100制作方法的工艺步骤图。Please refer to FIGS. 2A to 2D. FIGS. 2A to 2D are process steps diagrams of the manufacturing method of the display panel 100 of this application.
所述显示面板100制作方法包括：The manufacturing method of the display panel 100 includes:
S10、提供一衬底1010，在所述衬底10上形成阳极层20；S10, providing a substrate 1010, and forming an anode layer 20 on the substrate 10;
请参阅图2A，所述衬底10可以为阵列基板。Referring to FIG. 2A, the substrate 10 may be an array substrate.
所述衬底10包括基板和位于所述基板上的薄膜晶体管层。The substrate 10 includes a substrate and a thin film transistor layer on the substrate.
所述基板的原材料可以为玻璃基板、石英基板、树脂基板等中的一种。当所述基板为柔性基板时，所述柔性基板的材料可以为PI（聚酰亚胺）。The raw material of the substrate may be one of a glass substrate, a quartz substrate, a resin substrate, and the like. When the substrate is a flexible substrate, the material of the flexible substrate may be PI (polyimide).
所述薄膜晶体管层包括多个薄膜晶体管单元。所述薄膜晶体管单元可以为蚀刻阻挡层型、背沟道蚀刻型或顶栅薄膜晶体管型等，本实施例具体没有限制。The thin film transistor layer includes a plurality of thin film transistor units. The thin film transistor unit may be an etching barrier type, a back channel etching type, a top gate thin film transistor type, etc., which is not specifically limited in this embodiment.
本申请以顶栅薄膜晶体管型为例进行说明。This application takes the top-gate thin film transistor type as an example for description.
例如，所述薄膜晶体管单元可以包括：遮光层、缓冲层、有源层、栅绝缘层、栅极、间绝缘层、源漏极、钝化层及平坦层。For example, the thin film transistor unit may include: a light shielding layer, a buffer layer, an active layer, a gate insulating layer, a gate electrode, an inter-insulating layer, a source and drain electrode, a passivation layer, and a flat layer.
所述阳极层20形成于所述平坦层上。所述阳极层20通过图案化处理形成多个阳极。如图2A，所述阳极层20包括第一阳极201、第二阳极202及第三阳极203。The anode layer 20 is formed on the flat layer. The anode layer 20 is patterned to form a plurality of anodes. 2A, the anode layer 20 includes a first anode 201, a second anode 202, and a third anode 203.
所述阳极层20主要用于提供吸收电子的空穴。The anode layer 20 is mainly used to provide holes for absorbing electrons.
S20、在所述阳极层20形成发光层30；S20, forming a light emitting layer 30 on the anode layer 20;
请参阅图2B，所述发光层30被像素定义层（未画出）分割成多个发光单元。Referring to FIG. 2B, the light-emitting layer 30 is divided into a plurality of light-emitting units by a pixel definition layer (not shown).
在本实施例中，所述发光层30包括第一发光单元301、第二发光单元302及第三发光单元303。In this embodiment, the light-emitting layer 30 includes a first light-emitting unit 301, a second light-emitting unit 302, and a third light-emitting unit 303.
所述第一发光单元301位于所述第一阳极201上。The first light emitting unit 301 is located on the first anode 201.
所述第二发光单元302位于所述第二阳极202上。The second light emitting unit 302 is located on the second anode 202.
所述第三发光单元303位于所述第三阳极203上。The third light emitting unit 303 is located on the third anode 203.
所述第一发光单元301、所述第二发光单元302及所述第三发光单元303为红色发光单元、绿色发光单元、蓝色发光单元中的任意一种。所述第一发光单元301、所述第二发光单元302及所述第三发光单元303对应的发光单元颜色相异。The first light emitting unit 301, the second light emitting unit 302, and the third light emitting unit 303 are any one of a red light emitting unit, a green light emitting unit, and a blue light emitting unit. The color of the light-emitting units corresponding to the first light-emitting unit 301, the second light-emitting unit 302, and the third light-emitting unit 303 are different.
在本实施例中，所述第一发光单元301可以为红色发光单元。In this embodiment, the first light emitting unit 301 may be a red light emitting unit.
所述第二发光单元302可以为绿色发光单元。The second light emitting unit 302 may be a green light emitting unit.
所述第三发光单元303可以为蓝色发光单元。The third light emitting unit 303 may be a blue light emitting unit.
S30、在所述发光层30上形成阴极层40；S30, forming a cathode layer 40 on the light-emitting layer 30;
请参阅图2B，所述阴极层40覆盖所述发光层30。所述阴极层40用于提供被所述空穴吸收的电子。Please refer to FIG. 2B, the cathode layer 40 covers the light emitting layer 30. The cathode layer 40 is used to provide electrons absorbed by the holes.
S40、在所述阴极层40上形成封装层50；S40, forming an encapsulation layer 50 on the cathode layer 40;
请参阅图2B，所述封装层50可以为薄膜封装层50，主要用于阻水阻氧，防止外部水汽对有机发光层30的侵蚀。所述封装层50可以由至少一有机层与至少一无机层交错层叠而成。有机层通常位于所述封装层50的中间，无机层位于所述封装层50的两侧，将有机层包裹在中间。Referring to FIG. 2B, the encapsulation layer 50 may be a thin-film encapsulation layer 50, which is mainly used to block water and oxygen and prevent the organic light-emitting layer 30 from being corroded by external water vapor. The encapsulation layer 50 may be formed by alternately stacking at least one organic layer and at least one inorganic layer. The organic layer is usually located in the middle of the encapsulation layer 50, and the inorganic layer is located on both sides of the encapsulation layer 50, wrapping the organic layer in the middle.
在本申请的显示面板100制作方法中，还包括步骤：In the manufacturing method of the display panel 100 of the present application, the method further includes the following steps:
在所述阳极层20与所述阴极层40之间形成光学增强层60。An optical enhancement layer 60 is formed between the anode layer 20 and the cathode layer 40.
在本实施例中，所述光学增强层60为三维浮雕光栅结构，以增强所述发光层30的发光效率。In this embodiment, the optical enhancement layer 60 is a three-dimensional relief grating structure to enhance the luminous efficiency of the light-emitting layer 30.
当所述显示面板100为顶发光的OLED器件时，所述阳极层20可以为透明或非透明电极。When the display panel 100 is a top-emitting OLED device, the anode layer 20 may be a transparent or non-transparent electrode.
若所述阳极层20为透明电极，则在所述阳极层20与衬底10之间还设置有反射层，将发光层30产生的光线从顶部反射出去。If the anode layer 20 is a transparent electrode, a reflective layer is also provided between the anode layer 20 and the substrate 10 to reflect the light generated by the light-emitting layer 30 from the top.
若所述阳极层20为非透明电极，则所述阳极层20则作为反射层将发光层30产生的光线从顶部反射出去。If the anode layer 20 is a non-transparent electrode, the anode layer 20 acts as a reflective layer to reflect the light generated by the light-emitting layer 30 from the top.
所述阴极层40可以为半透明电极。半透明阴极与上述两种全反射结构形成微腔效应，增强所述OLED器件的发光效率。The cathode layer 40 may be a semi-transparent electrode. The semi-transparent cathode and the above two total reflection structures form a microcavity effect to enhance the luminous efficiency of the OLED device.
在本实施例中，所述阳极层20的材料可以为铟锡氧化物（ITO）、氧化铟锌（IZO）、氧化锌（ZnO）、氧化铟（In2O3）、铟镓氧化物（IGO）或氧化锌铝（AZO）中的至少一种。In this embodiment, the material of the anode layer 20 may be indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO) or At least one of zinc aluminum oxide (AZO).
当所述显示面板100为顶发光的OLED器件时，所述光学增强层60位于所述阳极层20与所述发光层30之间。When the display panel 100 is a top-emitting OLED device, the optical enhancement layer 60 is located between the anode layer 20 and the light-emitting layer 30.
即在步骤S20之前进行所述光学增强层60的制备。That is, the preparation of the optical enhancement layer 60 is performed before step S20.
首先，在经过图案化的所述阳极上，通过旋涂、喷墨打印或者刮涂等溶液加工的方式将偶氮苯类化合物的溶液涂布在所述阳极上，并制备成偶氮苯类化合物薄膜。First, on the patterned anode, a solution of azobenzene compounds is coated on the anode by solution processing methods such as spin coating, inkjet printing, or blade coating, and prepared into azobenzenes Compound film.
最后，利用双光束干涉激光系统照射该偶氮苯类化合物薄膜，使所述偶氮苯类化合物薄膜形成具有有序的三维浮雕光栅结构的光学增强层60。Finally, the double-beam interference laser system is used to irradiate the azobenzene compound film, so that the azobenzene compound film forms an optical enhancement layer 60 with an ordered three-dimensional relief grating structure.
在本实施例中，所述偶氮苯类化合物为偶氮苯类高分子或者偶氮苯类小分子化合物。In this embodiment, the azobenzene compound is an azobenzene polymer or an azobenzene small molecule compound.
所述偶氮苯类化合物中应包含有至少一种具有传输空穴的功能基团，例如咔唑，苯胺或是噻吩等。以及，至少包含一种能够用于增强其在常见有机溶剂中溶解性的功能基团，例如短链烷基链等。The azobenzene compound should contain at least one hole-transporting functional group, such as carbazole, aniline or thiophene. And, it contains at least one functional group that can be used to enhance its solubility in common organic solvents, such as a short-chain alkyl chain.
请参阅图2C，所述光学增强层60包括第一光学增强单元601、第二光学增强单元602及第三光学增强单元603。2C, the optical enhancement layer 60 includes a first optical enhancement unit 601, a second optical enhancement unit 602, and a third optical enhancement unit 603.
所述第一发光单元301与所述第一光学增强单元601对应；The first light emitting unit 301 corresponds to the first optical enhancement unit 601;
所述第二发光单元302与所述第二光学增强单元602对应；The second light emitting unit 302 corresponds to the second optical enhancement unit 602;
所述第三发光单元303与所述第三光学增强单元603对应。The third light emitting unit 303 corresponds to the third optical enhancement unit 603.
在本实施例中，由于不同的光学增加单元对应不同的颜色的发光单元，与红光及绿光相比，蓝光的光强能量较大，红光的光强能量最小，绿光的光强能量位于二者之间。由于光学增强层60的对不同颜色光的增强效果不一致，因此在材料的选择上，所述第一光学增强单元601、所述第二光学增强单元602及所述第三光学增强单元603的材料各不相同。In this embodiment, since different optical increase units correspond to light-emitting units of different colors, compared with red light and green light, blue light has greater light intensity and energy, red light has the smallest light intensity, and green light has the lowest light intensity. Energy lies in between. Since the enhancement effects of the optical enhancement layer 60 on different colors of light are inconsistent, in the selection of materials, the materials of the first optical enhancement unit 601, the second optical enhancement unit 602, and the third optical enhancement unit 603 Each is different.
本申请选择不同的偶氮苯类衍生物分别作为红、绿、蓝色光线对应的增强单元的材料，对发光单元发出的红、绿、及蓝色光线同步调节，改善OLED器件的光色，提高OLED器件的出光耦合效率。This application selects different azobenzene derivatives as the material of the enhancement unit corresponding to the red, green, and blue light, and adjusts the red, green, and blue light emitted by the light-emitting unit synchronously to improve the light color of the OLED device. Improve the output coupling efficiency of OLED devices.
当所述显示面板100为底发光的OLED器件时，所述阳极层20为半透明电极，所述阴极层40为全反射电极。When the display panel 100 is a bottom-emitting OLED device, the anode layer 20 is a semi-transparent electrode, and the cathode layer 40 is a total reflection electrode.
发光层30发出的光线经过所述阴极层40全反射至所述阳极，并经过所述衬底10射出所述显示面板100。The light emitted by the light-emitting layer 30 is totally reflected by the cathode layer 40 to the anode, and exits the display panel 100 through the substrate 10.
当所述显示面板100为底发光的OLED器件时，请参阅图2D，所述光学增强层60位于所述阴极层40与所述发光层30之间。When the display panel 100 is a bottom-emitting OLED device, referring to FIG. 2D, the optical enhancement layer 60 is located between the cathode layer 40 and the light-emitting layer 30.
即在步骤S30之前进行所述光学增强层60的制备。That is, the preparation of the optical enhancement layer 60 is performed before step S30.
在本实施例中，所述光学增强层60的制备方法与顶发光的相同，此处不再赘述。In this embodiment, the preparation method of the optical enhancement layer 60 is the same as that of the top-emitting light, which will not be repeated here.
请参阅图3，图3为本申请显示面板100的第一种结构图。Please refer to FIG. 3, which is a first structure diagram of the display panel 100 of the present application.
所述显示面板100包括衬底10、位于所述衬底10上的发光器件层、及位于所述发光器件层上的封装层50。The display panel 100 includes a substrate 10, a light-emitting device layer on the substrate 10, and an encapsulation layer 50 on the light-emitting device layer.
所述衬底10包括基板和位于所述基板上的薄膜晶体管层。The substrate 10 includes a substrate and a thin film transistor layer on the substrate.
所述基板的原材料可以为玻璃基板、石英基板、树脂基板等中的一种。当所述基板为柔性基板时，所述柔性基板的材料可以为PI（聚酰亚胺）。The raw material of the substrate may be one of a glass substrate, a quartz substrate, a resin substrate, and the like. When the substrate is a flexible substrate, the material of the flexible substrate may be PI (polyimide).
所述薄膜晶体管层包括多个薄膜晶体管单元。所述薄膜晶体管单元可以为蚀刻阻挡层型、背沟道蚀刻型或顶栅薄膜晶体管型等，本实施例具体没有限制。The thin film transistor layer includes a plurality of thin film transistor units. The thin film transistor unit may be an etch barrier type, a back channel etch type, or a top gate thin film transistor type, etc., which is not specifically limited in this embodiment.
本申请以顶栅薄膜晶体管型为例进行说明。This application takes the top gate thin film transistor type as an example for description.
例如，所述薄膜晶体管单元可以包括：遮光层、缓冲层、有源层、栅绝缘层、栅极、间绝缘层、源漏极、钝化层及平坦层。For example, the thin film transistor unit may include: a light shielding layer, a buffer layer, an active layer, a gate insulating layer, a gate electrode, an inter-insulating layer, a source and drain electrode, a passivation layer, and a flat layer.
所述发光器件层包括阳极层20、阴极层40、及位于所述阳极层20与所述阴极层40之间的发光层30。The light emitting device layer includes an anode layer 20, a cathode layer 40, and a light emitting layer 30 located between the anode layer 20 and the cathode layer 40.
所述阳极层20形成于所述平坦层上。所述阳极层20通过图案化处理形成多个阳极。如图3，所述阳极层20包括第一阳极201、第二阳极202及第三阳极203。The anode layer 20 is formed on the flat layer. The anode layer 20 is patterned to form a plurality of anodes. As shown in FIG. 3, the anode layer 20 includes a first anode 201, a second anode 202 and a third anode 203.
所述阳极层20主要用于提供吸收电子的空穴。The anode layer 20 is mainly used to provide holes for absorbing electrons.
所述发光层30位于所述阳极层20上。The light emitting layer 30 is located on the anode layer 20.
所述发光层30被像素定义层（未画出）分割成多个发光单元。The light-emitting layer 30 is divided into a plurality of light-emitting units by a pixel definition layer (not shown).
在本实施例中，所述发光层30包括第一发光单元301、第二发光单元302及第三发光单元303。In this embodiment, the light-emitting layer 30 includes a first light-emitting unit 301, a second light-emitting unit 302, and a third light-emitting unit 303.
所述第一发光单元301位于所述第一阳极201上。The first light emitting unit 301 is located on the first anode 201.
所述第二发光单元302位于所述第二阳极202上。The second light emitting unit 302 is located on the second anode 202.
所述第三发光单元303位于所述第三阳极203上。The third light emitting unit 303 is located on the third anode 203.
所述第一发光单元301、所述第二发光单元302及所述第三发光单元303为红色发光单元、绿色发光单元、蓝色发光单元中的任意一种。所述第一发光单元301、所述第二发光单元302及所述第三发光单元303对应的发光单元颜色相异。The first light emitting unit 301, the second light emitting unit 302, and the third light emitting unit 303 are any one of a red light emitting unit, a green light emitting unit, and a blue light emitting unit. The color of the light-emitting units corresponding to the first light-emitting unit 301, the second light-emitting unit 302, and the third light-emitting unit 303 are different.
在本实施例中，所述第一发光单元301可以为红色发光单元。In this embodiment, the first light emitting unit 301 may be a red light emitting unit.
所述第二发光单元302可以为绿色发光单元。The second light emitting unit 302 may be a green light emitting unit.
所述第三发光单元303可以为蓝色发光单元。The third light emitting unit 303 may be a blue light emitting unit.
所述阴极层40覆盖所述发光层30。The cathode layer 40 covers the light emitting layer 30.
所述阴极层40用于提供被所述空穴吸收的电子。The cathode layer 40 is used to provide electrons absorbed by the holes.
所述封装层50可以为薄膜封装层50，主要用于阻水阻氧，防止外部水汽对有机发光层30的侵蚀。所述封装层50可以由至少一有机层与至少一无机层交错层叠而成。有机层通常位于所述封装层50的中间，无机层位于所述封装层50的两侧，将有机层包裹在中间。The encapsulation layer 50 may be a thin-film encapsulation layer 50, which is mainly used to block water and oxygen, and prevent external moisture from corroding the organic light-emitting layer 30. The encapsulation layer 50 may be formed by alternately stacking at least one organic layer and at least one inorganic layer. The organic layer is usually located in the middle of the encapsulation layer 50, and the inorganic layer is located on both sides of the encapsulation layer 50, wrapping the organic layer in the middle.
在本申请的显示面板100中，所述发光器件层还包括：In the display panel 100 of the present application, the light-emitting device layer further includes:
位于所述阳极层20与所述阴极层40之间的光学增强层60。The optical enhancement layer 60 is located between the anode layer 20 and the cathode layer 40.
在本实施例中，所述光学增强层60为三维浮雕光栅结构，以增强所述发光层30的发光效率。In this embodiment, the optical enhancement layer 60 is a three-dimensional relief grating structure to enhance the luminous efficiency of the light-emitting layer 30.
当所述显示面板100为顶发光的OLED器件时，所述阳极层20可以为透明或非透明电极。When the display panel 100 is a top-emitting OLED device, the anode layer 20 may be a transparent or non-transparent electrode.
若所述阳极层20为透明电极，则在所述阳极层20与衬底10之间还设置有反射层，将发光层30产生的光线从顶部反射出去。If the anode layer 20 is a transparent electrode, a reflective layer is also provided between the anode layer 20 and the substrate 10 to reflect the light generated by the light-emitting layer 30 from the top.
若所述阳极层20为非透明电极，则所述阳极层20则作为反射层将发光层30产生的光线从顶部反射出去。If the anode layer 20 is a non-transparent electrode, the anode layer 20 acts as a reflective layer to reflect the light generated by the light-emitting layer 30 from the top.
所述阴极层40可以为半透明电极。半透明阴极与上述两种全反射结构形成微腔效应，增强所述OLED器件的发光效率。The cathode layer 40 may be a semi-transparent electrode. The semi-transparent cathode and the above two total reflection structures form a microcavity effect to enhance the luminous efficiency of the OLED device.
在本实施例中，所述阳极层20的材料可以为铟锡氧化物（ITO）、氧化铟锌（IZO）、氧化锌（ZnO）、氧化铟（In2O3）、铟镓氧化物（IGO）或氧化锌铝（AZO）中的至少一种。In this embodiment, the material of the anode layer 20 may be indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO) or At least one of zinc aluminum oxide (AZO).
当所述显示面板100为顶发光的OLED器件时，所述光学增强层60位于所述阳极层20与所述发光层30之间。When the display panel 100 is a top-emitting OLED device, the optical enhancement layer 60 is located between the anode layer 20 and the light-emitting layer 30.
首先，在经过图案化的所述阳极上，通过旋涂、喷墨打印或者刮涂等溶液加工的方式将偶氮苯类化合物的溶液涂布在所述阳极上，并制备成偶氮苯类化合物薄膜。First, on the patterned anode, a solution of azobenzene compounds is coated on the anode by solution processing methods such as spin coating, inkjet printing, or blade coating, and prepared into azobenzenes Compound film.
最后，利用双光束干涉激光系统照射该偶氮苯类化合物薄膜，使所述偶氮苯类化合物薄膜形成具有有序的三维浮雕光栅结构的光学增强层60。Finally, the double-beam interference laser system is used to irradiate the azobenzene compound film, so that the azobenzene compound film forms an optical enhancement layer 60 with an ordered three-dimensional relief grating structure.
在本实施例中，所述偶氮苯类化合物为偶氮苯类高分子或者偶氮苯类小分子化合物。In this embodiment, the azobenzene compound is an azobenzene polymer or an azobenzene small molecule compound.
所述偶氮苯类化合物中应包含有至少一种具有传输空穴的功能基团，例如咔唑，苯胺或是噻吩等。以及，至少包含一种能够用于增强其在常见有机溶剂中溶解性的功能基团，例如短链烷基链等。The azobenzene compound should contain at least one hole-transporting functional group, such as carbazole, aniline or thiophene. And, it contains at least one functional group that can be used to enhance its solubility in common organic solvents, such as a short-chain alkyl chain.
请参阅图3，所述光学增强层60包括第一光学增强单元601、第二光学增强单元602及第三光学增强单元603。Please refer to FIG. 3, the optical enhancement layer 60 includes a first optical enhancement unit 601, a second optical enhancement unit 602 and a third optical enhancement unit 603.
所述第一发光单元301与所述第一光学增强单元601对应；The first light emitting unit 301 corresponds to the first optical enhancement unit 601;
所述第二发光单元302与所述第二光学增强单元602对应；The second light emitting unit 302 corresponds to the second optical enhancement unit 602;
所述第三发光单元303与所述第三光学增强单元603对应。The third light emitting unit 303 corresponds to the third optical enhancement unit 603.
在本实施例中，由于不同的光学增加单元对应不同的颜色的发光单元，与红光及绿光相比，蓝光的光强能量较大，红光的光强能量最小，绿光的光强能量位于二者之间。由于光学增强层60的对不同颜色光的增强效果不一致，因此在材料的选择上，所述第一光学增强单元601、所述第二光学增强单元602及所述第三光学增强单元603的材料各不相同。In this embodiment, since different optical increase units correspond to light-emitting units of different colors, compared with red light and green light, blue light has greater light intensity and energy, red light has the smallest light intensity, and green light has the lowest light intensity. Energy lies in between. Since the enhancement effects of the optical enhancement layer 60 on different colors of light are inconsistent, in the selection of materials, the materials of the first optical enhancement unit 601, the second optical enhancement unit 602, and the third optical enhancement unit 603 Each is different.
本申请选择不同的偶氮苯类衍生物分别作为红、绿、蓝色光线对应的增强单元的材料，对发光单元发出的红、绿、及蓝色光线同步调节，改善OLED器件的光色，提高OLED器件的出光耦合效率。This application selects different azobenzene derivatives as the material of the enhancement unit corresponding to the red, green, and blue light, and adjusts the red, green, and blue light emitted by the light-emitting unit synchronously to improve the light color of the OLED device. Improve the output coupling efficiency of OLED devices.
请参阅图4，图4为本申请显示面板100的第二种结构图。Please refer to FIG. 4, which is a second structure diagram of the display panel 100 of this application.
当所述显示面板100为底发光的OLED器件时，所述阳极层20为半透明电极，所述阴极层40为全反射电极。When the display panel 100 is a bottom-emitting OLED device, the anode layer 20 is a semi-transparent electrode, and the cathode layer 40 is a total reflection electrode.
发光层30发出的光线经过所述阴极层40全反射至所述阳极，并经过所述衬底10射出所述显示面板100。The light emitted by the light-emitting layer 30 is totally reflected by the cathode layer 40 to the anode, and exits the display panel 100 through the substrate 10.
当所述显示面板100为底发光的OLED器件时，所述光学增强层60位于所述阴极层40与所述发光层30之间。When the display panel 100 is a bottom-emitting OLED device, the optical enhancement layer 60 is located between the cathode layer 40 and the light-emitting layer 30.
在本实施例中，所述光学增强层60的制备方法与顶发光的相同，此处不再赘述。In this embodiment, the preparation method of the optical enhancement layer 60 is the same as that of the top-emitting light, which will not be repeated here.
本申请还提出了一种显示模组，所述显示模组包括上述显示面板及位于所述显示面板上的偏光层、及盖板层、所述显示模组的工作原理与所述显示面板的相同或相似，本申请不再赘述。The application also proposes a display module, which includes the above-mentioned display panel, a polarizing layer on the display panel, and a cover layer, the working principle of the display module and the display panel The same or similar, this application will not repeat them.
本申请提出了一种显示面板及其制作方法、显示模组，所述显示面板包括衬底及位于该衬底上的发光器件层；该发光器件层包括位于所述阳极层与所述阴极层之间光学增强层。所述光学增强层为三维浮雕光栅结构，且包括与不同颜色的发光单元对应的不同光学增强单元，以增强所述发光层的发光效率。本申请通过在不同颜色的发光单元设置不同的光学增强单元，对发光单元发出的红、绿、及蓝色光线同步调节，改善OLED器件的光色，提高OLED器件的出光耦合效率。This application proposes a display panel, a manufacturing method thereof, and a display module. The display panel includes a substrate and a light-emitting device layer on the substrate; the light-emitting device layer includes the anode layer and the cathode layer Between the optical enhancement layer. The optical enhancement layer is a three-dimensional embossed grating structure, and includes different optical enhancement units corresponding to light-emitting units of different colors to enhance the luminous efficiency of the light-emitting layer. In the present application, different optical enhancement units are arranged in light-emitting units of different colors, and the red, green, and blue light emitted by the light-emitting units are adjusted synchronously to improve the light color of the OLED device and increase the light-out coupling efficiency of the OLED device.
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。In summary, although the application has been disclosed as above in preferred embodiments, the above-mentioned preferred embodiments are not intended to limit the application, and those of ordinary skill in the art can make various decisions without departing from the spirit and scope of the application. Such changes and modifications, so the protection scope of this application is subject to the scope defined by the claims.

Claims (19)

  1. 一种显示面板的制作方法，其包括：A manufacturing method of a display panel, which includes:
    S10、提供一衬底，在所述衬底上形成阳极层；S10, providing a substrate, and forming an anode layer on the substrate;
    S20、在所述阳极层形成发光层；S20, forming a light-emitting layer on the anode layer;
    S30、在所述发光层上形成阴极层；S30, forming a cathode layer on the light-emitting layer;
    S40、在所述阴极层上形成封装层；S40, forming an encapsulation layer on the cathode layer;
    其中，所述显示面板的制作方法还包括：Wherein, the manufacturing method of the display panel further includes:
    在所述阳极层与所述阴极层之间形成光学增强层，所述光学增强层为三维浮雕光栅结构，以增强所述发光层的发光效率。An optical enhancement layer is formed between the anode layer and the cathode layer, and the optical enhancement layer has a three-dimensional relief grating structure to enhance the luminous efficiency of the light-emitting layer.
  2. 根据权利要求1所述的制作方法，其中，The manufacturing method according to claim 1, wherein:
    所述光学增强层位于所述发光层与所述阳极层之间。The optical enhancement layer is located between the light-emitting layer and the anode layer.
  3. 根据权利要求1所述的制作方法，其中，The manufacturing method according to claim 1, wherein:
    所述光学增强层位于所述发光层与所述阴极层之间。The optical enhancement layer is located between the light-emitting layer and the cathode layer.
  4. 根据权利要求1所述的制作方法，其中，The manufacturing method according to claim 1, wherein:
    所述光学增强层包括第一光学增强单元、第二光学增强单元及第三光学增强单元；The optical enhancement layer includes a first optical enhancement unit, a second optical enhancement unit, and a third optical enhancement unit;
    所述第一光学增强单元、所述第二光学增强单元及所述第三光学增强单元的材料各不相同。The materials of the first optical enhancement unit, the second optical enhancement unit, and the third optical enhancement unit are different from each other.
  5. 根据权利要求4所述的制作方法，其中，The manufacturing method according to claim 4, wherein:
    所述发光层包括第一发光单元、第二发光单元以及第三发光单元；The light-emitting layer includes a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit;
    所述第一发光单元与所述第一光学增强单元对应；The first light-emitting unit corresponds to the first optical enhancement unit;
    所述第二发光单元与所述第二光学增强单元对应；The second light emitting unit corresponds to the second optical enhancement unit;
    所述第三发光单元与所述第三光学增强单元对应。The third light emitting unit corresponds to the third optical enhancement unit.
  6. 根据权利要求1所述的制作方法，其中，在所述阳极层与所述阴极层之间形成光学增强层的步骤包括：The manufacturing method according to claim 1, wherein the step of forming an optical enhancement layer between the anode layer and the cathode layer comprises:
    在所述阳极层上涂布偶氮苯类化合物的溶液，以形成偶氮苯类化合物薄膜；Coating the azobenzene compound solution on the anode layer to form an azobenzene compound film;
    利用双光束干涉激光系统照射所述偶氮苯类化合物薄膜，使所述偶氮苯类化合物薄膜形成具有有序的三维浮雕光栅结构的所述光学增强层。The double-beam interference laser system is used to irradiate the azobenzene compound film, so that the azobenzene compound film forms the optical enhancement layer with an ordered three-dimensional relief grating structure.
  7. 根据权利要求6所述的制作方法，其中，The manufacturing method according to claim 6, wherein:
    所述偶氮苯类化合物包括至少一种具有传输空穴的功能基团、及至少一种用于增强其在有机溶剂中溶解性的功能基团。The azobenzene compound includes at least one functional group with hole transport and at least one functional group for enhancing its solubility in organic solvents.
  8. 一种显示面板，其包括衬底、位于所述衬底上的发光器件层、及位于所述发光器件层上的封装层；A display panel including a substrate, a light emitting device layer on the substrate, and an encapsulation layer on the light emitting device layer;
    所述发光器件层包括阳极层、阴极层、及位于所述阳极层与所述阴极层之间的发光层与光学增强层，所述光学增强层为三维浮雕光栅结构，以增强所述发光层的发光效率。The light-emitting device layer includes an anode layer, a cathode layer, a light-emitting layer and an optical enhancement layer located between the anode layer and the cathode layer, and the optical enhancement layer is a three-dimensional relief grating structure to enhance the light-emitting layer The luminous efficiency.
  9. 根据权利要求8所述的显示面板，其中，The display panel according to claim 8, wherein:
    所述光学增强层位于所述发光层与所述阳极层之间。The optical enhancement layer is located between the light-emitting layer and the anode layer.
  10. 根据权利要求8所述的显示面板，其中，The display panel according to claim 8, wherein:
    所述光学增强层位于所述发光层与所述阴极层之间。The optical enhancement layer is located between the light-emitting layer and the cathode layer.
  11. 根据权利要求8所述的显示面板，其中，The display panel according to claim 8, wherein:
    所述光学增强层包括第一光学增强单元、第二光学增强单元及第三光学增强单元；The optical enhancement layer includes a first optical enhancement unit, a second optical enhancement unit, and a third optical enhancement unit;
    所述第一光学增强单元、所述第二光学增强单元及所述第三光学增强单元的材料各不相同。The materials of the first optical enhancement unit, the second optical enhancement unit, and the third optical enhancement unit are different from each other.
  12. 根据权利要求11所述的显示面板，其中，The display panel according to claim 11, wherein:
    所述发光层包括第一发光单元、第二发光单元以及第三发光单元；The light-emitting layer includes a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit;
    所述第一发光单元与所述第一光学增强单元对应；The first light-emitting unit corresponds to the first optical enhancement unit;
    所述第二发光单元与所述第二光学增强单元对应；The second light emitting unit corresponds to the second optical enhancement unit;
    所述第三发光单元与所述第三光学增强单元对应。The third light emitting unit corresponds to the third optical enhancement unit.
  13. 根据权利要求8所述的显示面板，其中，The display panel according to claim 8, wherein:
    所述光学增加层的材料包括偶氮苯类化合物；The material of the optical increase layer includes an azobenzene compound;
    所述偶氮苯类化合物包括至少一种具有传输空穴的功能基团、及至少一种用于增强其在有机溶剂中溶解性的功能基团。The azobenzene compound includes at least one functional group with hole transport and at least one functional group for enhancing its solubility in organic solvents.
  14. 一种显示模组，所述显示模组包括显示面板及位于所述显示面板上的偏光层、盖板层，其中，所述显示面板包括衬底、位于所述衬底上的发光器件层、及位于所述发光器件层上的封装层；A display module includes a display panel, a polarizing layer and a cover layer on the display panel, wherein the display panel includes a substrate, a light emitting device layer on the substrate, And an encapsulation layer located on the light-emitting device layer;
    所述发光器件层包括阳极层、阴极层、及位于所述阳极层与所述阴极层之间的发光层与光学增强层，所述光学增强层为三维浮雕光栅结构，以增强所述发光层的发光效率。The light-emitting device layer includes an anode layer, a cathode layer, a light-emitting layer and an optical enhancement layer located between the anode layer and the cathode layer, and the optical enhancement layer is a three-dimensional relief grating structure to enhance the light-emitting layer The luminous efficiency.
  15. 根据权利要求14所述的显示模组，其中，The display module according to claim 14, wherein:
    所述光学增强层位于所述发光层与所述阳极层之间。The optical enhancement layer is located between the light-emitting layer and the anode layer.
  16. 根据权利要求14所述的显示模组，其中，The display module according to claim 14, wherein:
    所述光学增强层位于所述发光层与所述阴极层之间。The optical enhancement layer is located between the light-emitting layer and the cathode layer.
  17. 根据权利要求14所述的显示模组，其中，The display module according to claim 14, wherein:
    所述光学增强层包括第一光学增强单元、第二光学增强单元及第三光学增强单元；The optical enhancement layer includes a first optical enhancement unit, a second optical enhancement unit, and a third optical enhancement unit;
    所述第一光学增强单元、所述第二光学增强单元及所述第三光学增强单元的材料各不相同。The materials of the first optical enhancement unit, the second optical enhancement unit, and the third optical enhancement unit are different from each other.
  18. 根据权利要求17所述的显示模组，其中，18. The display module of claim 17, wherein:
    所述发光层包括第一发光单元、第二发光单元以及第三发光单元；The light-emitting layer includes a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit;
    所述第一发光单元与所述第一光学增强单元对应；The first light-emitting unit corresponds to the first optical enhancement unit;
    所述第二发光单元与所述第二光学增强单元对应；The second light emitting unit corresponds to the second optical enhancement unit;
    所述第三发光单元与所述第三光学增强单元对应。The third light emitting unit corresponds to the third optical enhancement unit.
  19. 根据权利要求14所述的显示模组，其中，The display module according to claim 14, wherein:
    所述光学增加层的材料包括偶氮苯类化合物；The material of the optical increase layer includes an azobenzene compound;
    所述偶氮苯类化合物包括至少一种具有传输空穴的功能基团、及至少一种用于增强其在有机溶剂中溶解性的功能基团。The azobenzene compound includes at least one functional group with hole transport and at least one functional group for enhancing its solubility in organic solvents.
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