CN110098351A - Display panel and preparation method thereof - Google Patents
Display panel and preparation method thereof Download PDFInfo
- Publication number
- CN110098351A CN110098351A CN201910358324.5A CN201910358324A CN110098351A CN 110098351 A CN110098351 A CN 110098351A CN 201910358324 A CN201910358324 A CN 201910358324A CN 110098351 A CN110098351 A CN 110098351A
- Authority
- CN
- China
- Prior art keywords
- layer
- optical enhancement
- unit
- luminescence unit
- display panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Present applicant proposes a kind of display panel and preparation method thereof, the display panel includes substrate and the light emitting device layer on the substrate；The light emitting device layer includes the optical enhancement layer between the anode layer and the cathode layer.The optical enhancement layer is three-dimensional relief grating structure, and including different optical enhancement units corresponding from the luminescence unit of different colours, to enhance the luminous efficiency of the luminescent layer.Different optical enhancement units is arranged by the luminescence unit in different colours by the application, is adjusted in synchronism to red, the green and blue ray that luminescence unit issues, improves the photochromic of OLED device, and that improves OLED device goes out coupling efficiency.
Description
Technical field
This application involves display field, in particular to a kind of display panel and its manufacturing method.
Background technique
In flat panel display, Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) is aobvious
Show device have it is frivolous, actively shine, fast response time, angle of visibility is big, colour gamut is wide, brightness is high and many merits such as low in energy consumption, by
Gradually become the third generation display technology after liquid crystal display.
In the preparation process of existing OLED device, usually luminescent layer is set between total reflection and semi-reflective structure
Microcavity effect is formed, to improve the luminous efficiency of luminescent device.Enhancing effect but for the light of different colours, in microcavity effect
It answers different, therefore is unable to improve the photochromic of OLED device, reduce OLED device goes out coupling efficiency.
Summary of the invention
This application provides a kind of display panel and preparation method thereof, with improve existing OLED device shine it is photochromic.
To achieve the above object, technical solution provided by the present application is as follows:
The application provides a kind of production method of display panel comprising:
S10, a substrate is provided, forms anode layer over the substrate；
S20, luminescent layer is formed in the anode layer；
S30, cathode layer is formed on the light-emitting layer；
S40, encapsulated layer is formed on the cathode layer；
Wherein, the production method of the display panel further include:
Optical enhancement layer is formed between the anode layer and the cathode layer, the optical enhancement layer is three-dimensional embossment light
Grid structure, to enhance the luminous efficiency of the luminescent layer.
In the production method of the application,
The optical enhancement layer is between the luminescent layer and the anode layer.
In the production method of the application,
The optical enhancement layer is between the luminescent layer and the cathode layer.
In the production method of the application,
The optical enhancement layer includes the first optical enhancement unit, the second optical enhancement unit and third optical enhancement list
Member；
The material of the first optical enhancement unit, the second optical enhancement unit and the third optical enhancement unit
It is different.
In the production method of the application,
The luminescent layer includes the first luminescence unit, the second luminescence unit and third luminescence unit；
First luminescence unit is corresponding with the first optical enhancement unit；
Second luminescence unit is corresponding with the second optical enhancement unit；
The third luminescence unit is corresponding with the third optical enhancement unit.
The application also proposed a kind of display panel comprising substrate, the light emitting device layer on the substrate and position
Encapsulated layer on the light emitting device layer；
The light emitting device layer includes anode layer, cathode layer and the hair between the anode layer and the cathode layer
Photosphere and optical enhancement layer, the optical enhancement layer is three-dimensional relief grating structure, to enhance the luminous efficiency of the luminescent layer.
In the display panel of the application,
The optical enhancement layer is between the luminescent layer and the anode layer.
In the display panel of the application,
The optical enhancement layer is between the luminescent layer and the cathode layer.
In the display panel of the application,
The optical enhancement layer includes the first optical enhancement unit, the second optical enhancement unit and third optical enhancement list
Member；
The material of the first optical enhancement unit, the second optical enhancement unit and the third optical enhancement unit
It is different.
In the display panel of the application,
The luminescent layer includes the first luminescence unit, the second luminescence unit and third luminescence unit；
First luminescence unit is corresponding with the first optical enhancement unit；
Second luminescence unit is corresponding with the second optical enhancement unit；
The third luminescence unit is corresponding with the third optical enhancement unit.
The utility model has the advantages that present applicant proposes a kind of display panel and preparation method thereof, the display panel include substrate and
Light emitting device layer on the substrate；The light emitting device layer includes the optics increasing between the anode layer and the cathode layer
Strong layer.The optical enhancement layer is three-dimensional relief grating structure, and is not shared the same light including corresponding with the luminescence unit of different colours
Enhancement unit is learned, to enhance the luminous efficiency of the luminescent layer.The application is arranged different by the luminescence unit in different colours
Optical enhancement unit, red, the green and blue ray that luminescence unit issues is adjusted in synchronism, improves the photochromic of OLED device, mentions
High OLED device goes out coupling efficiency.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of invention
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
The step of Fig. 1 is the application display panel production method is schemed；
Fig. 2A~2D is the process sequence diagram of the application display panel production method；
Fig. 3 is the first structure chart of the application display panel；
Fig. 4 is second of structure chart of the application display panel.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the application
Example.The direction term that the application is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the application, rather than to
Limit the application.The similar unit of structure is with being given the same reference numerals in the figure.
Referring to Fig. 1, Fig. 1 schemes the step of being 100 production method of the application display panel.
Fig. 2A~2D is please referred to, Fig. 2A~2D is the process sequence diagram of 100 production method of the application display panel.
100 production method of display panel includes:
S10, a substrate 1010 is provided, forms anode layer 20 on the substrate 10；
Fig. 2A is please referred to, the substrate 10 can be array substrate.
The substrate 10 includes substrate and the tft layer on the substrate.
The raw material of the substrate can be one of glass substrate, quartz base plate, resin substrate etc..When the substrate
When for flexible base board, the material of the flexible base board can be PI (polyimides).
The tft layer includes multiple film crystal pipe units.The film crystal pipe unit can be etching resistance
Barrier type, back channel etch type or top-gate thin-film transistors type etc., specifically there is no limit for the present embodiment.
The application is illustrated by taking top-gate thin-film transistors type as an example.
For example, the film crystal pipe unit may include: light shield layer, buffer layer, active layer, gate insulation layer, grid,
Insulating layer, source-drain electrode, passivation layer and flatness layer.
The anode layer 20 is formed on the flatness layer.The anode layer 20 forms multiple sun by patterned process
Pole.Such as Fig. 2A, the anode layer 20 includes the first anode 201, second plate 202 and third anode 203.
The anode layer 20 is mainly used for providing the hole for absorbing electronics.
S20, luminescent layer 30 is formed in the anode layer 20；
Fig. 2 B is please referred to, the luminescent layer 30 is divided into multiple luminescence units by pixel defining layer (not shown).
In the present embodiment, the luminescent layer 30 includes the first luminescence unit 301, the second luminescence unit 302 and third hair
Light unit 303.
First luminescence unit 301 is located on the first anode 201.
Second luminescence unit 302 is located on the second plate 202.
The third luminescence unit 303 is located on the third anode 203.
First luminescence unit 301, second luminescence unit 302 and the third luminescence unit 303 are red hair
Light unit, green emitting unit, any one in blue-light-emitting unit.First luminescence unit 301, described second shine
Unit 302 and the corresponding luminescence unit color of the third luminescence unit 303 are different.
In the present embodiment, first luminescence unit 301 can be emitting red light unit.
Second luminescence unit 302 can be green emitting unit.
The third luminescence unit 303 can be blue-light-emitting unit.
S30, cathode layer 40 is formed on the luminescent layer 30；
Fig. 2 B is please referred to, the cathode layer 40 covers the luminescent layer 30.The cathode layer 40 is for providing by the sky
The electronics that cave absorbs.
S40, encapsulated layer 50 is formed on the cathode layer 40；
Fig. 2 B is please referred to, the encapsulated layer 50 can be thin-film encapsulation layer 50, be mainly used for the oxygen that blocks water, prevent external water
Erosion of the vapour to organic luminous layer 30.The encapsulated layer 50 can by an at least organic layer and an at least inorganic layer intersecting and
At.Organic layer is usually located at the centre of the encapsulated layer 50, and inorganic layer is located at the two sides of the encapsulated layer 50, organic layer is wrapped up
In centre.
In 100 production method of display panel of the application, further comprise the steps of:
Optical enhancement layer 60 is formed between the anode layer 20 and the cathode layer 40.
In the present embodiment, the optical enhancement layer 60 is three-dimensional relief grating structure, to enhance the luminescent layer 30
Luminous efficiency.
When the display panel 100 is the luminous OLED device in top, the anode layer 20 can be transparent or nontransparent
Electrode.
If the anode layer 20 is transparent electrode, it is additionally provided with reflecting layer between the anode layer 20 and substrate 10,
The light that luminescent layer 30 generates is gone out from top reflective.
If the anode layer 20 is non-transparent electrode, the anode layer 20 then will generate luminescent layer 30 as reflecting layer
Light go out from top reflective.
The cathode layer 40 can be semitransparent electrode.Semitransparent cathode and above two total reflection structure form microcavity effect
It answers, enhances the luminous efficiency of the OLED device.
In the present embodiment, the material of the anode layer 20 can be indium tin oxide (ITO), indium zinc oxide (IZO), oxygen
At least one of change zinc (ZnO), indium oxide (In2O3), indium gallium oxide (IGO) or zinc oxide aluminum (AZO).
When the display panel 100 is the luminous OLED device in top, the optical enhancement layer 60 is located at the anode layer
Between 20 and the luminescent layer 30.
The preparation of the optical enhancement layer 60 is carried out before step S20.
Firstly, in the side by being processed by solution such as spin coating, inkjet printing or blade coatings on the patterned anode
The solution coating of azobenzene compound on the anode, and is prepared into azobenzene compound film by formula.
Finally, irradiating the azobenzene compound film using two-beam interference laser system, make the azobenzene
It closes object film and forms the optical enhancement layer 60 with orderly three-dimensional relief grating structure.
In the present embodiment, the azobenzene compound is azobenzene macromolecule or azobenzene small molecule chemical combination
Object.
It should include at least one functional group with transporting holes, such as carbazole in the azobenzene compound,
Aniline or thiophene etc..And it can be used in enhancing its deliquescent function base in common organic solvents including at least one kind
Group, such as short-chain alkyl chain etc..
Fig. 2 C is please referred to, the optical enhancement layer 60 includes the first optical enhancement unit 601, the second optical enhancement unit
602 and third optical enhancement unit 603.
First luminescence unit 301 is corresponding with the first optical enhancement unit 601；
Second luminescence unit 302 is corresponding with the second optical enhancement unit 602；
The third luminescence unit 303 is corresponding with the third optical enhancement unit 603.
In the present embodiment, since different optics adding units corresponds to the luminescence unit of different colors, with feux rouges and
Green light is compared, and the light intensity energy of blue light is larger, and the light intensity energy of feux rouges is minimum, and the light intensity energy of green light is positioned there between.By
In the inconsistent to the reinforcing effect of different colours light of optical enhancement layer 60, therefore in the selection of material, first optics
The material of enhancement unit 601, the second optical enhancement unit 602 and the third optical enhancement unit 603 is different.
The application selects different azobenzene derivatives respectively as the corresponding enhancement unit of red, green, blue coloured light line
Material is adjusted in synchronism red, the green and blue ray that luminescence unit issues, improves the photochromic of OLED device, improves OLED device
Go out coupling efficiency.
When the display panel 100 is the OLED device that bottom shines, the anode layer 20 is semitransparent electrode, the yin
Pole layer 40 is total reflection electrode.
The light that luminescent layer 30 issues is all-trans by the cathode layer 40 is incident upon the anode, and penetrates by the substrate 10
The display panel 100 out.
When the display panel 100 is the OLED device that bottom shines, Fig. 2 D is please referred to, the optical enhancement layer 60 is located at
Between the cathode layer 40 and the luminescent layer 30.
The preparation of the optical enhancement layer 60 is carried out before step S30.
In the present embodiment, the preparation method of the optical enhancement layer 60 shines identical with top, and details are not described herein again.
Referring to Fig. 3, Fig. 3 is the first structure chart of the application display panel 100.
The display panel 100 includes substrate 10, the light emitting device layer on the substrate 10 and is located at described luminous
Encapsulated layer 50 on device layer.
The substrate 10 includes substrate and the tft layer on the substrate.
The raw material of the substrate can be one of glass substrate, quartz base plate, resin substrate etc..When the substrate
When for flexible base board, the material of the flexible base board can be PI (polyimides).
The tft layer includes multiple film crystal pipe units.The film crystal pipe unit can be etching resistance
Barrier type, back channel etch type or top-gate thin-film transistors type etc., specifically there is no limit for the present embodiment.
The application is illustrated by taking top-gate thin-film transistors type as an example.
For example, the film crystal pipe unit may include: light shield layer, buffer layer, active layer, gate insulation layer, grid,
Insulating layer, source-drain electrode, passivation layer and flatness layer.
The light emitting device layer includes anode layer 20, cathode layer 40 and is located at the anode layer 20 and the cathode layer 40
Between luminescent layer 30.
The anode layer 20 is formed on the flatness layer.The anode layer 20 forms multiple sun by patterned process
Pole.Such as Fig. 3, the anode layer 20 includes the first anode 201, second plate 202 and third anode 203.
The anode layer 20 is mainly used for providing the hole for absorbing electronics.
The luminescent layer 30 is located on the anode layer 20.
The luminescent layer 30 is divided into multiple luminescence units by pixel defining layer (not shown).
In the present embodiment, the luminescent layer 30 includes the first luminescence unit 301, the second luminescence unit 302 and third hair
Light unit 303.
First luminescence unit 301 is located on the first anode 201.
Second luminescence unit 302 is located on the second plate 202.
The third luminescence unit 303 is located on the third anode 203.
First luminescence unit 301, second luminescence unit 302 and the third luminescence unit 303 are red hair
Light unit, green emitting unit, any one in blue-light-emitting unit.First luminescence unit 301, described second shine
Unit 302 and the corresponding luminescence unit color of the third luminescence unit 303 are different.
In the present embodiment, first luminescence unit 301 can be emitting red light unit.
Second luminescence unit 302 can be green emitting unit.
The third luminescence unit 303 can be blue-light-emitting unit.
The cathode layer 40 covers the luminescent layer 30.
The cathode layer 40 is for providing by the electronics of the hole absorption.
The encapsulated layer 50 can be thin-film encapsulation layer 50, be mainly used for the oxygen that blocks water, prevent external moisture to organic hair
The erosion of photosphere 30.The encapsulated layer 50 can be formed by an at least organic layer and an at least inorganic layer intersecting.Organic layer
It is usually located at the centre of the encapsulated layer 50, inorganic layer is located at the two sides of the encapsulated layer 50, organic layer is wrapped in centre.
In the display panel 100 of the application, the light emitting device layer further include:
Optical enhancement layer 60 between the anode layer 20 and the cathode layer 40.
In the present embodiment, the optical enhancement layer 60 is three-dimensional relief grating structure, to enhance the luminescent layer 30
Luminous efficiency.
When the display panel 100 is the luminous OLED device in top, the anode layer 20 can be transparent or nontransparent
Electrode.
If the anode layer 20 is transparent electrode, it is additionally provided with reflecting layer between the anode layer 20 and substrate 10,
The light that luminescent layer 30 generates is gone out from top reflective.
If the anode layer 20 is non-transparent electrode, the anode layer 20 then will generate luminescent layer 30 as reflecting layer
Light go out from top reflective.
The cathode layer 40 can be semitransparent electrode.Semitransparent cathode and above two total reflection structure form microcavity effect
It answers, enhances the luminous efficiency of the OLED device.
In the present embodiment, the material of the anode layer 20 can be indium tin oxide (ITO), indium zinc oxide (IZO), oxygen
At least one of change zinc (ZnO), indium oxide (In2O3), indium gallium oxide (IGO) or zinc oxide aluminum (AZO).
When the display panel 100 is the luminous OLED device in top, the optical enhancement layer 60 is located at the anode layer
Between 20 and the luminescent layer 30.
Firstly, in the side by being processed by solution such as spin coating, inkjet printing or blade coatings on the patterned anode
The solution coating of azobenzene compound on the anode, and is prepared into azobenzene compound film by formula.
Finally, irradiating the azobenzene compound film using two-beam interference laser system, make the azobenzene
It closes object film and forms the optical enhancement layer 60 with orderly three-dimensional relief grating structure.
In the present embodiment, the azobenzene compound is azobenzene macromolecule or azobenzene small molecule chemical combination
Object.
It should include at least one functional group with transporting holes, such as carbazole in the azobenzene compound,
Aniline or thiophene etc..And it can be used in enhancing its deliquescent function base in common organic solvents including at least one kind
Group, such as short-chain alkyl chain etc..
Referring to Fig. 3, the optical enhancement layer 60 includes the first optical enhancement unit 601, the second optical enhancement unit 602
And third optical enhancement unit 603.
First luminescence unit 301 is corresponding with the first optical enhancement unit 601；
Second luminescence unit 302 is corresponding with the second optical enhancement unit 602；
The third luminescence unit 303 is corresponding with the third optical enhancement unit 603.
In the present embodiment, since different optics adding units corresponds to the luminescence unit of different colors, with feux rouges and
Green light is compared, and the light intensity energy of blue light is larger, and the light intensity energy of feux rouges is minimum, and the light intensity energy of green light is positioned there between.By
In the inconsistent to the reinforcing effect of different colours light of optical enhancement layer 60, therefore in the selection of material, first optics
The material of enhancement unit 601, the second optical enhancement unit 602 and the third optical enhancement unit 603 is different.
The application selects different azobenzene derivatives respectively as the corresponding enhancement unit of red, green, blue coloured light line
Material is adjusted in synchronism red, the green and blue ray that luminescence unit issues, improves the photochromic of OLED device, improves OLED device
Go out coupling efficiency.
Referring to Fig. 4, Fig. 4 is second of structure chart of the application display panel 100
When the display panel 100 is the OLED device that bottom shines, the anode layer 20 is semitransparent electrode, the yin
Pole layer 40 is total reflection electrode.
The light that luminescent layer 30 issues is all-trans by the cathode layer 40 is incident upon the anode, and penetrates by the substrate 10
The display panel 100 out.
When the display panel 100 is the OLED device that bottom shines, the optical enhancement layer 60 is located at the cathode layer
Between 40 and the luminescent layer 30.
In the present embodiment, the preparation method of the optical enhancement layer 60 shines identical with top, and details are not described herein again.
The application also proposed a kind of display module, and the display module includes above-mentioned display panel and is located at the display
Same or similar, this Shen of the working principle of polarizing layer and cover layer, the display module on panel and the display panel
It please repeat no more.
Present applicant proposes a kind of display panel and preparation method thereof, the display panel include substrate and be located at the substrate
On light emitting device layer；The light emitting device layer includes the optical enhancement layer between the anode layer and the cathode layer.It is described
Optical enhancement layer is three-dimensional relief grating structure, and including different optical enhancement lists corresponding from the luminescence unit of different colours
Member, to enhance the luminous efficiency of the luminescent layer.The application is arranged different optics by the luminescence unit in different colours and increases
Strong unit is adjusted in synchronism red, the green and blue ray that luminescence unit issues, improves the photochromic of OLED device, improves OLED device
Part goes out coupling efficiency.
Although above preferred embodiment is not to limit in conclusion the application is disclosed above with preferred embodiment
The application processed, those skilled in the art are not departing from spirit and scope, can make various changes and profit
Decorations, therefore the protection scope of the application subjects to the scope of the claims.
Claims (10)
1. a kind of production method of display panel characterized by comprising
S10, a substrate is provided, forms anode layer over the substrate；
S20, luminescent layer is formed in the anode layer；
S30, cathode layer is formed on the light-emitting layer；
S40, encapsulated layer is formed on the cathode layer；
Wherein, the production method of the display panel further include:
Optical enhancement layer is formed between the anode layer and the cathode layer, the optical enhancement layer is three-dimensional relief grating knot
Structure, to enhance the luminous efficiency of the luminescent layer.
2. manufacturing method according to claim 1, which is characterized in that
The optical enhancement layer is between the luminescent layer and the anode layer.
3. manufacturing method according to claim 1, which is characterized in that
The optical enhancement layer is between the luminescent layer and the cathode layer.
4. manufacturing method according to claim 1, which is characterized in that
The optical enhancement layer includes the first optical enhancement unit, the second optical enhancement unit and third optical enhancement unit；
The material of the first optical enhancement unit, the second optical enhancement unit and the third optical enhancement unit is respectively not
It is identical.
5. production method according to claim 4, which is characterized in that
The luminescent layer includes the first luminescence unit, the second luminescence unit and third luminescence unit；
First luminescence unit is corresponding with the first optical enhancement unit；
Second luminescence unit is corresponding with the second optical enhancement unit；
The third luminescence unit is corresponding with the third optical enhancement unit.
6. a kind of display panel, which is characterized in that including substrate, the light emitting device layer on the substrate and be located at described
Encapsulated layer on light emitting device layer；
The light emitting device layer includes anode layer, cathode layer and the luminescent layer between the anode layer and the cathode layer
With optical enhancement layer, the optical enhancement layer is three-dimensional relief grating structure, to enhance the luminous efficiency of the luminescent layer.
7. display panel according to claim 6, which is characterized in that
The optical enhancement layer is between the luminescent layer and the anode layer.
8. display panel according to claim 6, which is characterized in that
The optical enhancement layer is between the luminescent layer and the cathode layer.
9. display panel according to claim 6, which is characterized in that
The optical enhancement layer includes the first optical enhancement unit, the second optical enhancement unit and third optical enhancement unit；
The material of the first optical enhancement unit, the second optical enhancement unit and the third optical enhancement unit is respectively not
It is identical.
10. display panel according to claim 9, which is characterized in that
The luminescent layer includes the first luminescence unit, the second luminescence unit and third luminescence unit；
First luminescence unit is corresponding with the first optical enhancement unit；
Second luminescence unit is corresponding with the second optical enhancement unit；
The third luminescence unit is corresponding with the third optical enhancement unit.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910358324.5A CN110098351A (en) | 2019-04-30 | 2019-04-30 | Display panel and preparation method thereof |
| PCT/CN2019/104634 WO2020220551A1 (en) | 2019-04-30 | 2019-09-06 | Display panel and manufacturing method therefor, and display module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910358324.5A CN110098351A (en) | 2019-04-30 | 2019-04-30 | Display panel and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110098351A true CN110098351A (en) | 2019-08-06 |
Family
ID=67446478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910358324.5A Pending CN110098351A (en) | 2019-04-30 | 2019-04-30 | Display panel and preparation method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN110098351A (en) |
| WO (1) | WO2020220551A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020220551A1 (en) * | 2019-04-30 | 2020-11-05 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method therefor, and display module |
| WO2021042678A1 (en) * | 2019-09-02 | 2021-03-11 | 武汉华星光电半导体显示技术有限公司 | Display structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653806A (en) * | 2016-11-30 | 2017-05-10 | 上海天马有机发光显示技术有限公司 | Organic light-emitting display panel, manufacturing method thereof and electronic device |
| CN106684263A (en) * | 2015-11-10 | 2017-05-17 | 上海和辉光电有限公司 | Preparation method of OLED (Organic Light-Emitting Diode) pixel unit and OLED display panel |
| CN107732029A (en) * | 2017-09-20 | 2018-02-23 | 深圳市华星光电半导体显示技术有限公司 | A kind of OLED display panel and preparation method thereof |
| CN109585689A (en) * | 2018-12-29 | 2019-04-05 | 武汉天马微电子有限公司 | Display panel, display device and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2909223B1 (en) * | 2006-11-24 | 2009-04-10 | Commissariat Energie Atomique | LIGHT EMISSIVE DEVICE ELECTRODE OF OLED TYPE |
| CN110098351A (en) * | 2019-04-30 | 2019-08-06 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
-
2019
- 2019-04-30 CN CN201910358324.5A patent/CN110098351A/en active Pending
- 2019-09-06 WO PCT/CN2019/104634 patent/WO2020220551A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106684263A (en) * | 2015-11-10 | 2017-05-17 | 上海和辉光电有限公司 | Preparation method of OLED (Organic Light-Emitting Diode) pixel unit and OLED display panel |
| CN106653806A (en) * | 2016-11-30 | 2017-05-10 | 上海天马有机发光显示技术有限公司 | Organic light-emitting display panel, manufacturing method thereof and electronic device |
| CN107732029A (en) * | 2017-09-20 | 2018-02-23 | 深圳市华星光电半导体显示技术有限公司 | A kind of OLED display panel and preparation method thereof |
| CN109585689A (en) * | 2018-12-29 | 2019-04-05 | 武汉天马微电子有限公司 | Display panel, display device and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020220551A1 (en) * | 2019-04-30 | 2020-11-05 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method therefor, and display module |
| WO2021042678A1 (en) * | 2019-09-02 | 2021-03-11 | 武汉华星光电半导体显示技术有限公司 | Display structure |
| US11417859B2 (en) | 2019-09-02 | 2022-08-16 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display structure |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020220551A1 (en) | 2020-11-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20190088726A1 (en) | Organic light-emitting diode (oled) display panel and manufacturing method thereof, and display device | |
| KR100714016B1 (en) | Organic light-emitting display device | |
| EP2151879B1 (en) | Organic light emitting diode display | |
| CN109065582A (en) | A kind of array substrate and display panel, display device | |
| CN104134678B (en) | Organic light emitting diode display | |
| CN101262727B (en) | Organic light-emitting display device | |
| US10749143B2 (en) | Organic light emitting diode panel | |
| CN104733632B (en) | Organic light-emitting display device and its manufacture method | |
| US20190386067A1 (en) | Color film substrate for woled display and woled display | |
| CN103700692A (en) | OLED (organic light emitting diode) display panel and production method thereof | |
| KR102135937B1 (en) | Display device and method for manufacturing the same | |
| CN104347680A (en) | AMOLED (Active Matrix/Organic Light Emitting Diode) display panel and manufacturing method thereof and display device | |
| CN103000580A (en) | Array substrate and preparation method thereof | |
| CN109859644A (en) | Display panel and display module | |
| KR20170036160A (en) | Organic Light Emitting Diode Display Device | |
| CN104953038B (en) | Organic light-emitting display device | |
| CN110098351A (en) | Display panel and preparation method thereof | |
| KR20170010931A (en) | Color Filter Array Substrate And Organic Light Emitting Diode Display Device Including The Same | |
| CN109830515A (en) | A kind of display panel and display device | |
| CN110085775A (en) | Display panel and preparation method thereof | |
| KR20150077178A (en) | Organic light emitting device | |
| CN207651487U (en) | Pixel defines structure, transparent display panel and display device | |
| CN206610812U (en) | Organic LED display device | |
| CN203398117U (en) | Electroluminescent device and display device | |
| KR20120079796A (en) | Active matrix organic light emitting diode and method for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190806 |