WO2020216629A1 - Verfahren zur herstellung von dämpferstrukturen an einem mikromechanischen wafer - Google Patents
Verfahren zur herstellung von dämpferstrukturen an einem mikromechanischen wafer Download PDFInfo
- Publication number
- WO2020216629A1 WO2020216629A1 PCT/EP2020/060124 EP2020060124W WO2020216629A1 WO 2020216629 A1 WO2020216629 A1 WO 2020216629A1 EP 2020060124 W EP2020060124 W EP 2020060124W WO 2020216629 A1 WO2020216629 A1 WO 2020216629A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wafer
- impression
- micromechanical
- adhesive
- structures
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
- B81C1/00825—Protect against mechanical threats, e.g. against shocks, or residues
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/0046—Surface micromachining, i.e. structuring layers on the substrate using stamping, e.g. imprinting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
- B81B7/0016—Protection against shocks or vibrations, e.g. vibration damping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0147—Film patterning
- B81C2201/015—Imprinting
- B81C2201/0152—Step and Flash imprinting, UV imprinting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0183—Selective deposition
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/032—Gluing
Definitions
- the invention relates to a method for producing damper structures on a micromechanical wafer.
- Some MEMS sensors e.g. rotation rate sensors
- Some MEMS sensors have to be stored vibration-dampened depending on the installation location and requirements (e.g.
- damper structure wherein the damper structure is produced at the wafer level on a micromechanical wafer.
- the object of the invention is to create an alternative method for producing damper structures on a micromechanical wafer which is simpler and, if possible, also more cost-effective than known solutions in the prior art.
- the invention relates to a method for producing damper structures on a micromechanical wafer with the following steps:
- micromechanical wafers are micromechanical wafers.
- directly molded damper structures from the described layer system can be formed at wafer level by the method according to the invention and precisely positioned on the micromechanical wafer.
- This has the advantage that the precise and complex step of positioning and mounting between damper and sensor does not have to be carried out individually for each sensor-damper pair, but rather takes place for several thousand sensors at once.
- Positioning methods known from lithography can be used here for wafer mask adjustment, with adjustment structures for optical alignment (alignment).
- a more precise and repeatable alignment of damper to sensor also allows the design and construction of exactly matching damper structures and thus damping properties precisely tailored to the requirements.
- the steps for applying the damper structures can be advantageous are coordinated and combined with the back thinning (grinding, polishing) of the wafer stack and the later separation of the sensor-damper combination (for example by sawing or laser cutting).
- FIG. 1 shows schematically the method according to the invention for producing damper structures on a micromechanical wafer.
- FIG. 2 shows an example of an impression wafer with areas of different impression structures
- FIGS. 3 a and b schematically show steps (B) and (C) in an exemplary embodiment of the method according to the invention.
- FIGS. 4 a, b and c schematically show steps (D), (E) and (F) in an exemplary embodiment of the method according to the invention.
- FIGS. 5 a, b, c and d schematically show steps (D), (E) and (F) in a further exemplary embodiment of the method according to the invention.
- FIG. 1 shows schematically the method according to the invention for producing damper structures on a micromechanical wafer.
- the procedure consists of the following steps:
- An edge glue tape (EGT), preferably stretched onto a frame or holder, is provided for application to the first side of an impression wafer.
- the impression wafer is also provided with a first side with an impression structure.
- the molding wafer can be a semiconductor wafer, in particular a conventional silicon wafer.
- the impression wafer can also be a structured glass substrate, in particular a UV-permeable glass substrate, for example made of borosilicate.
- the impression structure is essentially a complementary structure or a negative for the damper structures to be produced.
- Edge adhesive film and impression wafer are provided in a process chamber, in particular a vacuum chamber.
- the process chamber is evacuated.
- the edge adhesive film is then applied to the first side of the impression wafer.
- the atmospheric pressure in the process chamber is increased again.
- the air (or the gas) flows back into the vacuum chamber, the
- the edge adhesive film can also be heated, whereby the impression structure is transferred even better into the film. Heat can therefore be supplied to the application of the foil and enclosing the
- the adhesive is used to fill out the impression structures. He trains im
- the adhesive should also adhere well to the second side of the micromechanical wafer.
- Resins in particular UV-curing resin, are suitable as the adhesive.
- liquid silicone (LSR) in particular UV-curing LSR, is suitable.
- LSR liquid silicone
- the advantages of the LSR are good damping properties and good temperature resistance.
- the UV-curing adhesive is cured by means of UV lighting, preferably through the impression wafer. UV-activated adhesive is exposed to light before curing. The curing of the adhesive can be assisted by heat.
- the micromechanical wafer is a wafer with surface micromechanical structures on a front side and with an opposite rear side, usually the substrate.
- the damper structures can be connected to the back of the micromechanical wafer.
- the micromechanical Wafer can be capped on its front side by a cover wafer. In this case, the damper structures can also be connected to an outside of the cover wafer.
- the second side of the micromechanical wafer can therefore be the rear side or the outside of the lid.
- a film for example made of polyethylene terephthalate (PET film)
- PET film polyethylene terephthalate
- the film is preferably DAF tape (die attach film).
- DAF tape die attach film
- Other single-layer or multilayer films made of plastic or other suitable materials can also be used.
- the adhesive is then cured in step (E). This is preferably done by UV illumination of the adhesive through the carrier and the PET film.
- the carrier is then removed.
- the damper structures are detached from the impression wafer and connected to the second side of the micromechanical wafer in step (F).
- the damper structures can optionally be connected to the second side of the micromechanical wafer with or without the PET film or the edge adhesive film.
- the damper structures can first be connected to the second side of the micromechanical wafer, and then the impression wafer is detached.
- the micromechanical wafer is already provided in step (D).
- the adhesive is applied to the second side of the micromechanical wafer or to the first side of the impression wafer (indirectly by means of the edge adhesive film).
- Damper structures with the second side of a micromechanical wafer in step (F) then take place in a manufacturing step.
- UV-activated adhesive is used, which is illuminated with UV radiation before pressing together.
- the adhesive is cured thermally.
- UV-curing adhesive is used.
- the UV Illumination can take place through the impression wafer if this wafer is UV transparent.
- a borosilicate glass wafer, for example, can be used for this purpose.
- the impression wafer is removed from the
- the edge adhesive film can also be removed from the damper structures.
- FIG. 2 shows an example of an impression wafer with areas of different impression structures as is provided in method step (A).
- FIGS. 3 a and b schematically show steps (B) and (C) in an exemplary embodiment of the method according to the invention.
- the impression wafer 1 is positioned on a heating plate 2 in a
- Vacuum chamber 3 (Fig. 3a).
- FIGS. 4 a, b and c schematically show steps (D), (E) and (F) in an exemplary embodiment of the method according to the invention.
- the impression wafer 1 lies with the edge adhesive film 5 facing upwards.
- the impression structures are filled with adhesive 6 from above. This can be done through precise dispensing into individual structures, or through central dispensing
- micromechanical wafer 7 for example a masked sensor wafer, adjusted and pressed on (FIG. 4 a).
- the adhesive 6 fills the spaces in the impression wafer 1 and forms the
- the adhesive or the LSR are cured by UV irradiation 8, for example from the underside, or by heat, and bond with the micromechanical wafer (FIG. 4 b). Finally, the edge adhesive film 5 is separated from the impression wafer 1, and the micromechanical wafer 7 is obtained, connected to the damper structures consisting of adhesive or LSR 6 and edge adhesive film 5 (FIG. 4 c).
- FIGS. 5 a, b, c and d schematically show steps (D), (E) and (F) in a further exemplary embodiment of the method according to the invention.
- the impression wafer 1 lies with the edge adhesive film 5 upwards.
- Impression structures are filled with adhesive 6. This can be done by precise dispensing into individual structures, or by central application of a measured amount.
- a DAF tape (die-attach film) 10 stretched with a further frame 9 is now pressed on from above by means of a stamp 11 (FIG. 5 a).
- the adhesive 6 fills the spaces in the impression wafer 1 between the edge adhesive film 5 and the DAF tape 10 and, together with the films, forms the damper structures.
- the adhesive (or the LSR) 6 are cured by UV radiation 8, for example from the underside, or by heat, and bond with the
- the stamp 11 moves upwards and the combination of DAF tape 10, adhesive 6 and edge adhesive film 5 can be removed from the impression wafer 1 with the further frame 9.
- This structure can then be adjusted to the micromechanical wafer 7, and the DAF tape 10 is connected to the micromechanical wafer (FIG. 5 c).
- the micromechanical wafer 7 is obtained connected to the
- Damper structures consisting of DAF tape 10, adhesive or LSR 6 and edge adhesive film 5 (Fig. 5 d).
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/421,912 US11873216B2 (en) | 2019-04-23 | 2020-04-09 | Method for producing damper structures on a micromechanical wafer |
KR1020217034283A KR20210149754A (ko) | 2019-04-23 | 2020-04-09 | 마이크로기계 웨이퍼상에 댐퍼 구조물을 생성하는 방법 |
JP2021562946A JP7280381B2 (ja) | 2019-04-23 | 2020-04-09 | マイクロメカニカルウェハにダンパ構造を製造するための方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102019205799.3 | 2019-04-23 | ||
DE102019205799.3A DE102019205799A1 (de) | 2019-04-23 | 2019-04-23 | Verfahren zur Herstellung von Dämpferstrukturen an einem mikromechanischen Wafer |
Publications (1)
Publication Number | Publication Date |
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WO2020216629A1 true WO2020216629A1 (de) | 2020-10-29 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/EP2020/060124 WO2020216629A1 (de) | 2019-04-23 | 2020-04-09 | Verfahren zur herstellung von dämpferstrukturen an einem mikromechanischen wafer |
Country Status (5)
Country | Link |
---|---|
US (1) | US11873216B2 (de) |
JP (1) | JP7280381B2 (de) |
KR (1) | KR20210149754A (de) |
DE (1) | DE102019205799A1 (de) |
WO (1) | WO2020216629A1 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102018222685A1 (de) * | 2018-12-20 | 2020-06-25 | Robert Bosch Gmbh | Verfahren zur Herstellung einer mikromechanischen Vorrichtung mit Dämpferstruktur |
DE102020204766A1 (de) | 2020-04-15 | 2021-10-21 | Robert Bosch Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung von Dämpferstrukturen an einem mikromechanischen Wafer |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018172081A1 (en) * | 2017-03-21 | 2018-09-27 | Epcos Ag | Carrier substrate for stress sensitive device and method of manufacture |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000280385A (ja) | 1999-03-31 | 2000-10-10 | Dainippon Ink & Chem Inc | 繊維強化樹脂積層材および成形品の製造方法 |
WO2012002446A1 (ja) | 2010-07-02 | 2012-01-05 | 独立行政法人産業技術総合研究所 | 微小機械システム |
MY176541A (en) | 2013-11-07 | 2020-08-14 | Agc Inc | Mold release film and process for producing semiconductor package |
CN106062947B (zh) * | 2014-03-07 | 2019-03-05 | Agc株式会社 | 半导体元件安装用封装体的制造方法以及脱模膜 |
DE102018222685A1 (de) * | 2018-12-20 | 2020-06-25 | Robert Bosch Gmbh | Verfahren zur Herstellung einer mikromechanischen Vorrichtung mit Dämpferstruktur |
DE102020204766A1 (de) * | 2020-04-15 | 2021-10-21 | Robert Bosch Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung von Dämpferstrukturen an einem mikromechanischen Wafer |
-
2019
- 2019-04-23 DE DE102019205799.3A patent/DE102019205799A1/de active Pending
-
2020
- 2020-04-09 KR KR1020217034283A patent/KR20210149754A/ko active Search and Examination
- 2020-04-09 JP JP2021562946A patent/JP7280381B2/ja active Active
- 2020-04-09 WO PCT/EP2020/060124 patent/WO2020216629A1/de active Application Filing
- 2020-04-09 US US17/421,912 patent/US11873216B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018172081A1 (en) * | 2017-03-21 | 2018-09-27 | Epcos Ag | Carrier substrate for stress sensitive device and method of manufacture |
Also Published As
Publication number | Publication date |
---|---|
JP7280381B2 (ja) | 2023-05-23 |
DE102019205799A1 (de) | 2020-10-29 |
US11873216B2 (en) | 2024-01-16 |
JP2022530027A (ja) | 2022-06-27 |
US20220024757A1 (en) | 2022-01-27 |
KR20210149754A (ko) | 2021-12-09 |
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