WO2020215417A1 - 显示面板及显示面板的制备方法 - Google Patents

显示面板及显示面板的制备方法 Download PDF

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Publication number
WO2020215417A1
WO2020215417A1 PCT/CN2019/087724 CN2019087724W WO2020215417A1 WO 2020215417 A1 WO2020215417 A1 WO 2020215417A1 CN 2019087724 W CN2019087724 W CN 2019087724W WO 2020215417 A1 WO2020215417 A1 WO 2020215417A1
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Prior art keywords
layer
display panel
auxiliary electrode
cover plate
electrode layer
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French (fr)
Inventor
魏锋
李金川
方俊雄
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present disclosure relates to the field of display technology, and in particular to a display panel and a manufacturing method of the display panel.
  • OLED Organic Light-Emitting Device
  • Organic electroluminescence display devices are divided into bottom emission and top emission according to the light emission mode.
  • the bottom emission type display device cannot meet the needs of the market for the development of high resolution products due to the design aperture ratio. Therefore, the application range of top emission OLED devices Wider.
  • Top-emitting OLEDs have the advantages of high resolution, transparent cathodes, and optical effects.
  • the entire surface coating method is adopted, which makes it easier to realize large-size OLED screens.
  • the impedance becomes It is too large to meet the requirements of use, so that the pressure drop of the display panel during display is not ideal, causing problems such as uneven display of the panel.
  • the cathode layer In the cathode layer preparation process of the existing top-emitting OLED display panel, the cathode layer cannot achieve high transmittance and low impedance at the same time, so that the display panel displays unevenly during display.
  • a display panel including:
  • a pixel definition layer, the pixel definition layer and the light-emitting layer are spaced apart;
  • An encapsulation layer, the encapsulation layer is disposed on the light-emitting layer and the pixel definition layer;
  • a cover plate, the cover plate is arranged on the encapsulation layer;
  • auxiliary electrode layer is disposed between the encapsulation layer and the cover plate, and the auxiliary electrode layer is disposed in a non-opening area of the display panel;
  • the thickness of the auxiliary electrode layer is 50 nm to 1000 nm.
  • the material of the auxiliary electrode layer is nano silver.
  • the width of the auxiliary electrode layer is 3 ⁇ m-20 ⁇ m.
  • the cover plate is a glass cover plate.
  • the cover plate is a color filter.
  • the display panel further includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and a charge generation layer.
  • the display panel further includes a cathode layer, and the material of the cathode layer includes indium tin oxide, indium zinc oxide, magnesium, or silver.
  • a display panel including:
  • a pixel definition layer, the pixel definition layer and the light-emitting layer are spaced apart;
  • An encapsulation layer, the encapsulation layer is disposed on the light-emitting layer and the pixel definition layer;
  • a cover plate, the cover plate is arranged on the encapsulation layer;
  • An auxiliary electrode layer, the auxiliary electrode layer is arranged between the encapsulation layer and the cover plate, and the auxiliary electrode layer is arranged in a non-opening area of the display panel.
  • the material of the auxiliary electrode layer is nano silver.
  • the thickness of the auxiliary electrode layer is 50 nm to 1000 nm.
  • the width of the auxiliary electrode layer is 3 ⁇ m-20 ⁇ m.
  • the cover plate is a glass cover plate or a color filter.
  • a method for manufacturing a display panel including:
  • step S101 preparing an organic light emitting diode device layer and a pixel definition layer on the basis of step S100, and preparing a cathode layer of the organic light emitting diode;
  • S102 preparing an auxiliary electrode layer, and transferring the auxiliary electrode layer to a non-pixel area of the organic light emitting diode, and the auxiliary electrode layer is disposed in a non-opening area of the display panel;
  • the preparation process is a precision regeneration mask technology.
  • the packaging process is one or a combination of film packaging, curing glue packaging, desiccant packaging, and cover plate packaging processes.
  • the organic light emitting diode device layer includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and a charge generation layer.
  • the organic light emitting diode device layer is prepared by an inkjet printing process and an evaporation process.
  • the material of the cathode layer includes indium tin oxide, indium zinc oxide, magnesium or silver.
  • the present disclosure provides a display panel and a method for manufacturing the display panel.
  • an auxiliary cathode layer is provided on the basis of an entire cathode by using transfer technology.
  • the layer is arranged in the non-pixel light-emitting area of the display panel, so that the impedance of the cathode is effectively reduced, the voltage drop problem of the display panel is solved, and the display effect of the display panel is improved.
  • FIG. 1 is a schematic diagram of each layer structure of a display panel according to an embodiment of the disclosure
  • FIG. 2 is a flow chart of the manufacturing process of the display panel provided by the embodiments of the disclosure.
  • FIG. 3 is a schematic diagram of the structure of the auxiliary electrode layer provided by an embodiment of the disclosure.
  • FIG. 1 is a schematic diagram of the structure of each layer of the display panel of the embodiment of the disclosure.
  • the display panel includes a substrate 100, a buffer layer 101 disposed on the substrate 100, an inorganic insulating layer 102 disposed on the buffer layer 101, a passivation layer 103 disposed on the inorganic insulating layer 102, and a passivation layer 103 disposed on the ⁇ 104 ⁇
  • the flat layer 104 is a schematic diagram of the structure of each layer of the display panel of the embodiment of the disclosure.
  • the display panel includes a substrate 100, a buffer layer 101 disposed on the substrate 100, an inorganic insulating layer 102 disposed on the buffer layer 101, a passivation layer 103 disposed on the inorganic insulating layer 102, and a passivation layer 103 disposed on the ⁇ 104 ⁇
  • the flat layer 104 is a schematic diagram of the structure of each layer of the display panel of the embodiment of the disclosure.
  • a thin film transistor (TFT) first gate 114 is also provided in the buffer layer 101, and an active layer 115 is also provided in the inorganic insulating layer 102, which is provided on the active layer 115
  • the source/drain 111 of the thin film transistor is also arranged in the passivation layer 103. Wherein, the source/drain 111 of the above-mentioned thin film transistor is connected to the active layer 115.
  • the above-mentioned film layers are mainly the electrodes of thin-film transistors.
  • sputtering film formation technology or organic film formation technology can be used to prepare through exposure, development and etching processes. .
  • the film layer of the flat layer 104 also includes: an OLED anode layer 105, an OLED device layer 106, an inorganic layer 107, and an organic layer 108.
  • the OLED anode layer 105 is arranged on the OLED device layer 106, the OLED anode layer 105 and the OLED device layer 106 are both arranged in the pixel definition layer, and the inorganic layer 107 seals the OLED anode layer 105, the OLED device layer 106 and the pixel definition layer .
  • the organic layer 108 is disposed on the inorganic layer 107, and the inorganic layer 107 and the organic layer 108 together form the encapsulation layer of the display panel to protect the OLED device in the encapsulation layer.
  • an auxiliary electrode layer 109 is also provided on the organic layer 108, and a cover plate 110 is provided on the auxiliary electrode layer 109.
  • the auxiliary electrode layer 109 is only arranged on the non-luminous area of the OLED device, that is, arranged in the non-opening area of the display panel, so that the light emitted in the OLED device layer 106 will not be blocked, thereby not affecting the display panel. The display effect.
  • the auxiliary electrode layer 109 will form a reinforcing metal layer, which will reduce the impedance of the cathode in the OLED device, thereby solving the problem of voltage drop of the display panel and ensuring the uniformity of the display of the display panel.
  • the auxiliary electrode layer 109 may be made of nano silver, and the cover 110 may be a glass cover or a color filter cover, which is selected according to the specific use requirements of the display panel.
  • FIG. 2 is a flow chart of the manufacturing process of the display panel provided by the embodiment of the disclosure. The process flow includes the following steps:
  • S100 preparing the gate layer, the source layer, the drain layer, the active layer and the anode layer of the organic light emitting diode of the thin film transistor on the substrate.
  • the specific film structure of the drain electrode and the anode layer of the OLED is shown in conjunction with the schematic diagram of each film layer of the display panel in FIG. 1.
  • the film can be formed by sputtering film formation technology, organic chemical film formation technology, and subjected to photolithography processes such as exposure, development, and etching.
  • step S101 Prepare an organic light emitting diode device layer and a pixel definition layer on the basis of step S100, and prepare a cathode layer of the organic light emitting diode.
  • the device layer is mainly a light-emitting layer, which specifically includes film layers such as a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a charge generation layer.
  • a cathode layer is prepared on the device layer.
  • the preparation of the cathode layer can also use precision regeneration mask technology, wherein the material of the cathode can be one of indium tin oxide, indium zinc oxide, magnesium or silver.
  • S102 Prepare a precise auxiliary electrode layer, and transfer the auxiliary electrode layer to a non-pixel area of the organic light emitting diode.
  • a precise circuit layer that is, an auxiliary electrode layer
  • the auxiliary electrode layer is fabricated on the OLED device layer using high-precision registration transfer technology.
  • FIG. 3 is a schematic diagram of the structure of the auxiliary electrode layer provided by an embodiment of the disclosure.
  • the display panel 300 includes a pixel unit 302 and an auxiliary electrode layer 301.
  • the auxiliary electrode layer 301 is disposed in the non-light-emitting area of the display panel, that is, the non-opening area. In this way, the auxiliary electrode layer 301 will not affect the display effect in the pixel area.
  • a suitable mask pattern is prepared according to the size of the pixel unit in the OLED, and then an auxiliary electrode layer 301 is arranged on the mask pattern using high-precision registration transfer technology, and then transferred to the OLED device layer.
  • the thickness of the auxiliary electrode layer 301 is 50 nanometers to 1000 nanometers, preferably 250 nanometers, and the width of the auxiliary electrode layer 301 is 3 micrometers to 20 micrometers, preferably 3 micrometers.
  • the cover plate is covered for further packaging.
  • the cover plate is a glass cover plate or a color filter, which is specifically selected according to the display requirements of the display panel.
  • film packaging, curing adhesive packaging, desiccant packaging or cover plate packaging can be used for packaging, and one or a combination of the above packaging processes can be selected for packaging to ensure the packaging effect.
  • a display panel and a manufacturing method of the display panel provided by the embodiments of the present disclosure are described in detail above.
  • the description of the above embodiments is only used to help understand the technical solutions and core ideas of the present disclosure; those of ordinary skill in the art should It is understood that it is still possible to modify the technical solutions described in the foregoing embodiments, and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present disclosure.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
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  • Electroluminescent Light Sources (AREA)

Abstract

一种显示面板及其制备方法。显示面板包括发光层、像素定义层、封装层、盖板（110）以及辅助电极层（109），辅助电极层（109）设置在封装层与盖板（110）之间，且辅助电极层（109）设置在显示面板的非开口区域内。辅助电极层（109）在非像素区内形成了加强金属层，减小了阴极阻抗，解决了显示面板的压降问题。

Description

显示面板及显示面板的制备方法 技术领域
本揭示涉及显示技术领域，尤其涉及一种显示面板及显示面板的制备方法。
 背景技术
有机电致发光显示器件（Organic Light-Emitting Device，OLED）相对于液晶显示装置具有自发光、反应快、轻薄等优点，已成为显示领域的新兴技术。
有机电致发光显示器件按照发光方式分为底发射和顶发射，底发射型显示器件中由于设计开口率的问题而无法满足市场高分辨率产品发展的需求，因此，顶发射OLED器件的使用范围更广。顶发射OLED具有高的分辨率、透明阴极以及光学效果等优点。现有的顶发射器件生产工艺流程中，采用整面镀膜的方法，这样更容易实现大尺寸的OLED屏，但是，在现有的顶发射器件产品中，阴极层制备完成后，其阻抗变得较大，不能满足使用要求，使得显示面板在显示时压降不理想，造成面板显示不均匀等问题。
因此需要对现有技术中的问题提出解决方法。
 技术问题
现有的顶发射OLED显示面板在阴极层制备制程中，无法实现其阴极层在具有较高透过率的同时还具有较小的阻抗，使得显示面板在显示时显示不均匀。
 技术解决方案
为解决上述问题，本揭示提供一种显示面板及显示面板的制备方法。根据本揭示实施例的第一方面，提供了一种显示面板，包括：
发光层；
像素定义层，所述像素定义层与所述发光层间隔设置；
封装层，所述封装层设置在所述发光层和所述像素定义层上；
盖板，所述盖板设置在所述封装层上；以及
辅助电极层，所述辅助电极层设置在所述封装层与所述盖板之间，且所述辅助电极层设置在所述显示面板的非开口区域内；
其中所述辅助电极层的厚度为50纳米~1000纳米。
于一实施例中，所述辅助电极层的材料为纳米银。
于一实施例中，所述辅助电极层的宽度为3微米~20微米。
于一实施例中，所述盖板为玻璃盖板。
于一实施例中，所述盖板为彩色滤光片。
于一实施例中，所述显示面板还包括空穴注入层、空穴传输层、发光层、电子传输层以及电荷生成层。
于一实施例中，所述显示面板还包括阴极层，所述阴极层的材料包括氧化铟锡、氧化铟锌、镁或银。
根据本揭示实施例的第二方面，还提供一种显示面板，包括：
发光层；
像素定义层，所述像素定义层与所述发光层间隔设置；
封装层，所述封装层设置在所述发光层和所述像素定义层上；
盖板，所述盖板设置在所述封装层上；以及
辅助电极层，所述辅助电极层设置在所述封装层与所述盖板之间，且所述辅助电极层设置在所述显示面板的非开口区域内。
于一实施例中，所述辅助电极层的材料为纳米银。
于一实施例中，所述辅助电极层的厚度为50纳米~1000纳米。
于一实施例中，所述辅助电极层的宽度为3微米~20微米。
于一实施例中，所述盖板为玻璃盖板或彩色滤光片。
根据本揭示实施例的第三方面，还提供一种显示面板的制备方法，包括：
S100：在基板上制备薄膜晶体管的栅极层、源极层、漏极层，以及有源层和有机发光二极管的阳极层；
S101：在步骤S100的基础上制备有机发光二极管器件层及像素定义层，并制备所述有机发光二极管的阴极层；
S102：制备辅助电极层，并将所述辅助电极层转印到所述有机发光二极管的非像素区域内，所述辅助电极层设置在所述显示面板的非开口区域内；
S103：转印完成后，封装所述显示面板。
于一实施例中，所述步骤S101中，所述制备工艺为精密再生掩模板技术。
于一实施例中，所述步骤S103中，所述封装工艺为薄膜封装、固化胶封装、干燥剂封装以及盖板封装工艺中的一种或组合方式进行封装。
于一实施例中，在所述步骤S101中，所述有机发光二极管器件层包括空穴注入层、空穴传输层、发光层、电子传输层以及电荷生成层。
于一实施例中，所述有机发光二极管器件层采用喷墨打印工艺和蒸镀工艺进行制备。
于一实施例中，所述步骤S101中，所述阴极层的材料包括氧化铟锡、氧化铟锌、镁或银。
 有益效果
相较于现有技术，本揭示提供一种显示面板及显示面板的制备方法，通过在顶发射式OLED器件中，在整面阴极的基础上采用转印技术设置辅助阴极层，所述辅助阴极层设置在显示面板的非像素发光区域内，这样，有效的降低了阴极的阻抗，并解决了显示面板的压降问题，提高显示面板的显示效果。
 附图说明
图1为本揭示实施例的显示面板各层结构示意图；
图2为本揭示实施例提供的显示面板的制备工艺流程图；
图3为本揭示实施例提供的辅助电极层结构示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本揭示可用以实施的特定实施例。
在本揭示的实施例中，如图1所示，图1为本揭示实施例的显示面板各层结构示意图。所述显示面板包括基板100、设置在基板100上的缓冲层101、设置在缓冲层101上的无机绝缘层102、设置在无机绝缘层102上的钝化层103以及设置在钝化层103上的平坦层104。在上述各层中，在缓冲层101内还设置有薄膜晶体管（thin film transistor，TFT）第一栅极114，在无机绝缘层102内，还包括有源层115、设置在有源层115上的栅极绝缘层113，以及设置在栅极绝缘层113上的第二栅极层112。在钝化层103内还设置有薄膜晶体管的源/漏极111。其中，上述薄膜晶体管的源/漏极111与所述有源层115相连接。
上述膜层中，主要为薄膜晶体管的各电极，在制备上述各膜层时，可采用溅射成膜的工艺，或者有机成膜的技术，并经过曝光、显影以及刻蚀等工艺制备而来。
同时，在所述平坦层104膜层上还包括：OLED阳极层105、OLED器件层106、无机层107以及有机层108。OLED阳极层105设置在OLED器件层106上，所述OLED阳极层105与OLED器件层106均设置在像素定义层内，无机层107密封所述OLED阳极层105、OLED器件层106以及像素定义层。有机层108设置在所述无机层107上，无机层107与有机层108一同组成了显示面板的封装层，以保护封装层内的OLED器件。
同时，在有机层108上还设置一辅助电极层109，在所述辅助电极层109上设置盖板110。其中，所述辅助电极层109只设置在OLED器件的非发光区域上，即设置在显示面板的非开口区域内，这样，不会阻挡住OLED器件层106内发出的光线，从而不影响显示面板的显示效果。并且，所述辅助电极层109会形成一层加强金属层，这层金属层会降低OLED器件中阴极的阻抗，进而解决显示面板压降的问题，保证显示面板显示的均匀性。
具体的，辅助电极层109的制作材料可为纳米银，并且盖板110可为玻璃盖板或者彩色滤光片盖板，根据显示面板的具体使用需求进行选择。
同时，本揭示实施例还提供一种显示面板的制备方法。如图2所示，图2为本揭示实施例提供的显示面板的制备工艺流程图。工艺流程包括如下步骤：
S100：在基板上制备薄膜晶体管的栅极层、源极层、漏极层，以及有源层和有机发光二极管的阳极层。
具体的，在制备本揭示实施例提供的显示面板时，先在基板上采用逐层一次构图的工艺形成TFT的第一栅极层、有源层、绝缘层、第二栅极层、源/漏极以及OLED的阳极层，具体膜层结构结合图1中显示面板的各膜层示意图所示。在上述各膜层的制程过程中，可以通过溅射成膜技术、有机化学成膜技术进行成膜，并且经过曝光、显影以及刻蚀等光刻工艺处理。
S101：在步骤S100的基础上制备有机发光二极管器件层及像素定义层，并制备所述有机发光二极管的阴极层。
当步骤S100中的各膜层设置完成后，继续制备有机发光二极管的器件层，制备有机发光二极管器件层时可采用逐层精密再生掩模板技术工艺进行制备，同时，还可以采用喷墨打印和蒸镀方式相结合的技术工艺进行制备。所述器件层主要为发光层，具体包括空穴注入层、空穴传输层、发光层、电子传输层以及电荷生成层等膜层。
当器件层制备完成后，在所述器件层上制备阴极层。阴极层的制备也可采用精密再生掩模板技术，其中阴极的材料可为氧化铟锡、氧化铟锌、镁或银中的一种。
S102：制备精密的辅助电极层，并将所述辅助电极层转印到所述有机发光二极管的非像素区域内。
在步骤S101的基础上制备精密的电路图层，即辅助电极层。在制备时，采用高精度对位转印技术将辅助电极层制作于OLED器件层上。
具体的，如图3所示，图3为本揭示实施例提供的辅助电极层结构示意图。显示面板300中包括像素单元302以及辅助电极层301。辅助电极层301设置在显示面板的非发光区内，即非开口区，这样，辅助电极层301不会影响像素区内的显示效果。根据OLED内像素单元的大小制备合适的掩膜图案，然后采用高精度对位转印技术，在掩膜图案上设置辅助电极层301，再转印到OLED器件层上。所述辅助电极层301的厚度为50纳米~1000纳米，优选的为250纳米，所述辅助电极层301的宽度为3微米~20微米，优选的为3微米。
S103：转印完成后，封装所述显示面板。
当将辅助电极层转印完成后，将盖板盖上进一步封装，所述盖板为玻璃盖板或彩色滤光片，根据显示面板的显示需求进行具体选择。选择封装工艺时，可采用薄膜封装、固化胶封装、干燥剂封装或盖板封装工艺进行封装，可选择上述封装工艺中的一种或组合的方式进行封装，以保证封装的效果。
最后，获得本揭示实施例中的显示面板。
以上对本揭示实施例所提供的一种显示面板及显示面板的制备方法进行了详细介绍，以上实施例的说明只是用于帮助理解本揭示的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，而这些修改或者替换，并不使相应技术方案的本质脱离本揭示各实施例的技术方案的范围。

Claims (18)

  1. 一种显示面板，包括：
    发光层；
    像素定义层，所述像素定义层与所述发光层间隔设置；
    封装层，所述封装层设置在所述发光层和所述像素定义层上；
    盖板，所述盖板设置在所述封装层上；以及
    辅助电极层，所述辅助电极层设置在所述封装层与所述盖板之间，且所述辅助电极层设置在所述显示面板的非开口区域内；
    其中所述辅助电极层的厚度为50纳米~1000纳米。
  2. 根据权利要求1所述的显示面板，其中所述辅助电极层的材料为纳米银。
  3. 根据权利要求1所述的显示米板，其中所述辅助电极层的宽度为3微米~20微米。
  4. 根据权利要求1所述的显示面板，其中所述盖板为玻璃盖板。
  5. 根据权利要求1所述的显示面板，其中所述盖板为彩色滤光片。
  6. 根据权利要求1所述的显示面板，还包括空穴注入层、空穴传输层、发光层、电子传输层以及电荷生成层。
  7. 根据权利要求1所述的显示面板，还包括阴极层，所述阴极层的材料包括氧化铟锡、氧化铟锌、镁或银。
  8. 一种显示面板，包括：
    发光层；
    像素定义层，所述像素定义层与所述发光层间隔设置；
    封装层，所述封装层设置在所述发光层和所述像素定义层上；
    盖板，所述盖板设置在所述封装层上；以及
    辅助电极层，所述辅助电极层设置在所述封装层与所述盖板之间，且所述辅助电极层设置在所述显示面板的非开口区域内。
  9. 根据权利要求8所述的显示面板，其中所述辅助电极层的材料为纳米银。
  10. 根据权利要求8所述的显示面板，其中所述辅助电极层的厚度为50纳米~1000纳米。
  11. 根据权利要求8所述的显示面板，其中所述辅助电极层的宽度为3微米~20微米。
  12. 根据权利要求8所述的显示面板，其中所述盖板为玻璃盖板或彩色滤光片。
  13. 一种显示面板的制备方法，包括如下步骤：
    S100：在基板上制备薄膜晶体管的栅极层、源极层、漏极层，以及有源层和有机发光二极管的阳极层；
    S101：在步骤S100的基础上制备有机发光二极管器件层及像素定义层，并制备所述有机发光二极管的阴极层；
    S102：制备辅助电极层，并将所述辅助电极层转印到所述有机发光二极管的非像素区域内，所述辅助电极层设置在所述显示面板的非开口区域内；
    S103：转印完成后，封装所述显示面板。
  14. 根据权利要求13所述的显示面板的制备方法，其中所述步骤S101中，所述制备工艺为精密再生掩模板技术。
  15. 根据权利要求13所述的显示面板的制备方法，其中所述步骤S103中，所述封装工艺为薄膜封装、固化胶封装、干燥剂封装以及盖板封装工艺中的一种或组合方式进行封装。
  16. 根据权利要求13所述的显示面板的制备方法，其中所述步骤S101中，所述有机发光二极管器件层包括空穴注入层、空穴传输层、发光层、电子传输层以及电荷生成层。
  17. 根据权利要求16所述的显示面板的制备方法，其中所述有机发光二极管器件层采用喷墨打印工艺和蒸镀工艺进行制备。
  18. 根据权利要求13所述的显示面板的制备方法，其中所述步骤S101中，所述阴极层的材料包括氧化铟锡、氧化铟锌、镁或银。
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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110634918B (zh) * 2019-08-27 2021-09-24 深圳市华星光电半导体显示技术有限公司 Oled显示面板和oled显示面板的制备方法
CN110767728B (zh) * 2019-10-31 2022-07-15 Oppo广东移动通信有限公司 显示装置及电子设备
CN110783364B (zh) * 2019-10-31 2022-09-13 Oppo广东移动通信有限公司 显示装置及电子设备
CN110931653B (zh) * 2019-11-27 2022-07-12 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法
CN111540844B (zh) * 2020-05-20 2023-05-23 京东方科技集团股份有限公司 阵列基板及其制作方法、显示面板
CN111599936B (zh) * 2020-05-25 2023-01-31 视涯科技股份有限公司 一种有机发光显示面板及制备方法
CN111725422A (zh) * 2020-06-09 2020-09-29 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法、显示装置
CN112259694A (zh) * 2020-10-14 2021-01-22 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106024839A (zh) * 2016-07-12 2016-10-12 武汉华星光电技术有限公司 折叠式oled显示器
US20160380040A1 (en) * 2015-06-24 2016-12-29 Japan Display Inc. Display device
CN107731863A (zh) * 2017-11-06 2018-02-23 友达光电股份有限公司 发光二极管显示器
CN109037280A (zh) * 2018-07-24 2018-12-18 云谷（固安）科技有限公司 有机电致发光显示面板及其制作方法、显示装置
CN109065751A (zh) * 2018-07-25 2018-12-21 武汉华星光电技术有限公司 显示模组及电子装置
CN208622775U (zh) * 2018-08-03 2019-03-19 云谷（固安）科技有限公司 显示面板及显示装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106992267A (zh) * 2017-04-28 2017-07-28 深圳市华星光电技术有限公司 一种顶发射oled器件及制备方法、显示面板
CN107604306A (zh) * 2017-09-12 2018-01-19 深圳市华星光电半导体显示技术有限公司 用于oled器件蒸镀的掩膜板及其制造的oled器件
CN107731883A (zh) * 2017-11-17 2018-02-23 深圳市华星光电半导体显示技术有限公司 Oled显示器及其制作方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160380040A1 (en) * 2015-06-24 2016-12-29 Japan Display Inc. Display device
CN106024839A (zh) * 2016-07-12 2016-10-12 武汉华星光电技术有限公司 折叠式oled显示器
CN107731863A (zh) * 2017-11-06 2018-02-23 友达光电股份有限公司 发光二极管显示器
CN109037280A (zh) * 2018-07-24 2018-12-18 云谷（固安）科技有限公司 有机电致发光显示面板及其制作方法、显示装置
CN109065751A (zh) * 2018-07-25 2018-12-21 武汉华星光电技术有限公司 显示模组及电子装置
CN208622775U (zh) * 2018-08-03 2019-03-19 云谷（固安）科技有限公司 显示面板及显示装置

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