WO2020199255A1 - Dispositif à del et unité d'affichage - Google Patents

Dispositif à del et unité d'affichage Download PDF

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Publication number
WO2020199255A1
WO2020199255A1 PCT/CN2019/083187 CN2019083187W WO2020199255A1 WO 2020199255 A1 WO2020199255 A1 WO 2020199255A1 CN 2019083187 W CN2019083187 W CN 2019083187W WO 2020199255 A1 WO2020199255 A1 WO 2020199255A1
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WO
WIPO (PCT)
Prior art keywords
shaped groove
light
quantum dot
emitting
substrate
Prior art date
Application number
PCT/CN2019/083187
Other languages
English (en)
Chinese (zh)
Inventor
樊勇
Original Assignee
深圳市华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Publication of WO2020199255A1 publication Critical patent/WO2020199255A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/13—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Definitions

  • the invention relates to the field of display technology, in particular to an LED device and a display device.
  • micro light emitting diode micro Light emitting diode, micro LED
  • the full-color solution of display devices is mainly divided into a full-color solution using red, green and blue micro LEDs and a full-color solution using blue light + photoconversion layer.
  • red, green, and blue chips have different lifespans, and the wavelength of the three-color chips varies differently under different current densities, it is easy to cause Micro
  • the uneven chromaticity and brightness of LED displays and long-term use cause color and brightness variations; in addition, in the use of RGB three-color micro LED chips, the luminous efficiency of red and green light is much lower than that of blue light, and due to the use of three-color chips, large-scale The benefit is not as good as the use of a blue light chip, and the cost is higher.
  • the light conversion layer usually uses quantum dot materials that require high absorptivity, narrow light-emitting spectrum, and high light-emitting efficiency.
  • the quantum dot material is afraid of water, oxygen and strong light, and the quantum dots need to be packaged for water and oxygen resistance; in addition, due to the process conditions, the thickness of the arrayed quantum dot layer is generally ⁇ 10um, which requires a relatively high concentration of quantum dots , But the concentration of quantum dots increases, and the fluorescence conversion efficiency decreases due to the concentration quenching effect.
  • the light conversion layer usually uses quantum dot materials that require high absorptivity, narrow light-emitting spectrum, and high light-emitting efficiency.
  • the quantum dot material is afraid of water, oxygen and strong light, and the quantum dots need to be packaged for water and oxygen resistance; in addition, due to the process conditions, the thickness of the arrayed quantum dot layer is generally ⁇ 10um, which requires a relatively high concentration of quantum dots , But the concentration of quantum dots increases, and the fluorescence conversion efficiency decreases due to the concentration quenching effect.
  • the embodiments of the present invention provide an LED device and a display device, which improve the energy utilization and brightness of the required light and reduce power consumption; and reduce the use of materials, reduce costs, and at the same time achieve the barrier effect on water and oxygen, Ensure the reliability of quantum dot applications.
  • the present application provides an LED device, the LED device includes: a first substrate, the first substrate is provided with a first U-shaped groove; a second substrate, and the first substrate A substrate is disposed opposite to each other, a second U-shaped groove is provided on the second substrate, and the second U-shaped groove is disposed opposite to the first U-shaped groove; the first light-emitting chip is disposed on the first U-shaped groove.
  • the first metal reflective layer is arranged on the side wall of the first U-shaped groove and the inner wall of the second U-shaped groove; the first quantum dot layer is arranged in the second U-shaped groove; The corresponding light-emitting color of the first light-emitting chip is different from the color of the first quantum dot layer.
  • the first light-emitting chip is a blue LED chip
  • the first quantum dot layer is a red quantum dot layer or a green quantum dot layer.
  • a third U-shaped groove is further provided on the first substrate, a fourth U-shaped groove is further provided on the second substrate, and the third U-shaped groove is opposite to the fourth U-shaped groove.
  • the LED device further includes:
  • the second light-emitting chip is arranged in the third U-shaped groove.
  • the second light-emitting chip is a red LED chip or a green LED chip.
  • the LED device further includes:
  • the second metal reflective layer is arranged on the side wall of the third U-shaped groove and the inner wall of the fourth U-shaped groove;
  • the second quantum dot layer is arranged in the fourth U-shaped groove.
  • the second light-emitting chip is a blue LED chip, and the corresponding light-emitting color of the second light-emitting chip is different from the color of the second quantum dot layer.
  • the LED device further includes:
  • the third metal reflective layer is arranged on the side wall of the third U-shaped groove and the inner wall of the fourth U-shaped groove.
  • the first substrate is a TFT substrate.
  • the first quantum dot layer is formed by placing quantum dot ink in the second groove by inkjet printing.
  • the first U-shaped groove and the second U-shaped groove form a light-emitting groove.
  • the present application provides a display device
  • the display device includes an LED device, and the LED device includes:
  • the second substrate is arranged opposite to the first substrate, a second U-shaped groove is provided on the second substrate, and the second U-shaped groove is arranged opposite to the first U-shaped groove;
  • the first light-emitting chip is arranged in the first U-shaped groove
  • the first metal reflective layer is arranged on the side wall of the first U-shaped groove and the inner wall of the second U-shaped groove;
  • the first quantum dot layer is arranged in the second U-shaped groove
  • the corresponding light-emitting color of the first light-emitting chip is different from the color of the first quantum dot layer.
  • the first light-emitting chip is a blue LED chip
  • the first quantum dot layer is a red quantum dot layer or a green quantum dot layer.
  • a third U-shaped groove is further provided on the first substrate, a fourth U-shaped groove is further provided on the second substrate, and the third U-shaped groove is opposite to the fourth U-shaped groove.
  • the LED device further includes:
  • the second light-emitting chip is arranged in the third U-shaped groove.
  • the second light-emitting chip is a red LED chip or a green LED chip.
  • the LED device further includes:
  • the second metal reflective layer is arranged on the side wall of the third U-shaped groove and the inner wall of the fourth U-shaped groove;
  • the second quantum dot layer is arranged in the fourth U-shaped groove.
  • the second light-emitting chip is a blue LED chip, and the corresponding light-emitting color of the second light-emitting chip is different from the color of the second quantum dot layer.
  • the LED device further includes:
  • the third metal reflective layer is arranged on the side wall of the third U-shaped groove and the inner wall of the fourth U-shaped groove.
  • the first substrate is a TFT substrate.
  • the first quantum dot layer is formed by placing quantum dot ink in the second U-shaped groove by means of inkjet printing.
  • the first U-shaped groove and the second U-shaped groove form a light-emitting groove.
  • the metal reflective layer and the quantum dot layer are arranged in the light-emitting groove of the LED device to increase the light reflection path, which can effectively improve the energy utilization and brightness of the required light, and reduce the power consumption; and reduce the material
  • the use of reduces the cost, but also achieves the barrier effect on water and oxygen, and ensures the reliability of the application of quantum dots.
  • Fig. 1 is a schematic structural diagram of an embodiment of an LED device provided by an embodiment of the present invention.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first” and “second” may explicitly or implicitly include one or more of the features. In the description of the present invention, “plurality” means two or more than two, unless specifically defined otherwise.
  • micro light emitting diode micro light emitting diode
  • it is mainly divided into the use of red, green and blue micro
  • the LED full-color solution and the full-color solution using blue light + photoconversion layer Since the red, green and blue chips have different lifespans and forward voltages, and because the three-color chips have different wavelength changes under different current densities, it is easy to cause Micro
  • embodiments of the present invention provide an LED device and a display device. Detailed descriptions are given below.
  • an embodiment of the present invention provides an LED device.
  • the LED device includes a first substrate on which a first U-shaped groove is provided; a second substrate is provided opposite to the first substrate.
  • the second substrate is provided with a second U-shaped groove, and the second U-shaped groove is arranged opposite to the first U-shaped groove; the first light-emitting chip is arranged in the first U-shaped groove;
  • the metal reflective layer is arranged on the sidewall of the first U-shaped groove and the inner wall of the second U-shaped groove; the first quantum dot layer is arranged in the second U-shaped groove; the first light-emitting chip corresponds to The emission color is different from the color of the first quantum dot layer.
  • FIG. 1 it is a schematic structural diagram of an embodiment of the LED device in the embodiment of the present invention.
  • the LED device includes a first substrate 101 on which a first U-shaped groove 102 is provided; a second substrate 103, opposite to the first substrate 101, a second U-shaped groove 104 is provided on the second substrate 103, and the second U-shaped groove 104 is opposite to the first U-shaped groove 102;
  • the light emitting chip 105 is arranged in the first U-shaped groove 102;
  • the first metal reflective layer 106 is arranged on the side wall of the first U-shaped groove 102 and the inner wall of the second U-shaped groove 104;
  • the dot layer 107 is disposed in the second U-shaped groove 104.
  • a first metal reflective layer 106 is provided on the side wall of the first U-shaped groove 102 and the inner wall of the second U-shaped groove 104, and a quantum dot is provided in the second U-shaped groove 104
  • the layer 107 increases the light reflection path, which can effectively improve the energy utilization and brightness of the required light, reduce power consumption, and reduce the use of materials, and reduce costs; at the same time, it also achieves the barrier effect of water and oxygen, ensuring The reliability of quantum dot applications.
  • LED devices in general, due to the need to emit multi-color light, such as RGB three colors, there are generally three light-emitting grooves in the LED light-emitting device, as shown in FIG. 1, in the embodiment of the present invention, relatively disposed
  • the first U-shaped groove 102 and the second U-shaped groove 104 form a light-emitting groove.
  • the light-emitting groove formed by the first U-shaped groove 102 and the second U-shaped groove 104 may be a light-emitting groove corresponding to any color of R, G, and B. Since the luminous efficiency of red light and green light is much lower than that of blue light in the RGB three-color LED chip, in the embodiment of the present invention, the light-emitting groove corresponding to the red light and/or green light can be improved in the LED device , And the blue LED chip is directly used for the blue light emitting groove.
  • the first light-emitting chip 105 is located in the LED device corresponding to the light-emitting groove emitting red or green light
  • the first light-emitting chip 105 is a blue LED chip
  • the first quantum dot layer 107 is a red quantum dot layer Or the green quantum dot layer, and then absorb the blue light emitted by the first light-emitting chip 105 through the red quantum dot layer or the green quantum dot layer, thereby emitting red light or green light.
  • the blue light emitted from the blue LED chip is reflected by the first metal reflective layer on the surface of the first U-shaped groove in the first substrate and the second U-shaped groove in the second substrate, the blue light is added to the first quantum dot layer.
  • the propagation path of the first quantum dot layer can make the first quantum dot layer fully absorb blue light, thereby reducing the residual blue light, improving the energy utilization rate, which is conducive to improving brightness and reducing power consumption; at the same time, due to the propagation path of blue light in the first quantum dot layer Increase can reduce the concentration of quantum dot ink, reduce material usage, and improve fluorescence conversion efficiency.
  • the first quantum dot layer has a substrate above and below, it can achieve a good barrier effect on water vapor and oxygen, and can ensure the reliability of the application of quantum dots.
  • the first substrate 101 is a TFT substrate, and a thin film transistor (Thin-film transistor, TFT) is a field effect transistor.
  • TFT thin film transistor
  • the rough production method is to deposit various thin films on the substrate, such as semiconductor active layers, dielectric layers and metal electrode layers. Thin film transistors play a very important role in the performance of the display device.
  • the first quantum dot layer 107 is formed by placing quantum dot ink in the second groove 104 by inkjet printing.
  • a third U-shaped groove 108 may also be provided on the first substrate 101, and a fourth U-shaped groove 109 may also be provided on the second substrate.
  • the LED device may further include: a second light-emitting chip 110 arranged in the third U-shaped groove 108, on the basis of the above-mentioned embodiment, in another aspect of this application. In one embodiment, only the light-emitting groove corresponding to one of red light or green light in the LED device may be improved.
  • the second light-emitting chip 110 is a red LED chip or a green LED chip
  • the light-emitting grooves corresponding to the third U-shaped groove 108 and the fourth U-shaped groove 109 are light-emitting grooves emitting red light or light-emitting grooves emitting green light.
  • the light-emitting grooves corresponding to the first U-shaped groove 102 and the second U-shaped groove 104 are light-emitting grooves that emit red light
  • the chip is a blue LED chip
  • the first quantum dot layer is a red quantum dot layer
  • the second light-emitting chip is a green LED chip.
  • the light-emitting grooves corresponding to the first U-shaped groove 102 and the second U-shaped groove 104 are light-emitting grooves that emit green light
  • the first light-emitting chip is a blue LED chip
  • the first quantum dot layer is The green quantum dot layer
  • the second light-emitting chip is a red LED chip, which may not be improved compared to the prior art.
  • the LED device may further include: a second metal reflective layer 111 arranged on the sidewall of the first U-shaped groove 102 and the inner wall of the fourth U-shaped groove 109; a second quantum dot layer 112 arranged on the fourth In the U-shaped groove 109, the second light-emitting chip 110 is a blue LED chip, and the corresponding light-emitting color of the second light-emitting chip 110 is different from that of the second quantum dot layer.
  • the first quantum dot layer and the second quantum dot layer have different colors. Specifically, the first light-emitting chip and the second light-emitting chip are both blue light chips. If the first quantum dot layer is a red quantum dot layer, the second quantum dot layer is a green quantum dot layer. The dot layer is a green quantum dot layer, and the second quantum dot layer is a red quantum dot layer.
  • the two light-emitting grooves that emit red and green light in the LED device are simultaneously improved.
  • the metal reflective layer and quantum dot layer are also provided. Further increase the light reflection path of the light-emitting chip in the LED device, which can effectively improve the energy utilization and brightness of the required light, reduce power consumption, and reduce the use of materials and reduce costs; at the same time, it also achieves the barrier to water and oxygen.
  • the function ensures the reliability of the application of quantum dots and further improves its luminous quality.
  • the light-emitting groove that emits blue light can also be improved.
  • the blue LED chip has the highest luminous efficiency, it can be improved by comparing the light-emitting groove that emits blue light.
  • the metal reflective layer is added to the groove to further improve the utilization of light energy.
  • the light-emitting grooves corresponding to the third U-shaped groove 108 and the fourth U-shaped groove 109 are light-emitting grooves that emit blue light
  • the second The light-emitting chip is a blue LED chip
  • the LED device further includes: a third metal reflective layer disposed on the side wall of the third U-shaped groove and the inner wall of the fourth U-shaped groove.
  • the light-emitting groove in the LED device that emits blue light is improved, and a metal reflective layer is arranged in it, which can effectively reflect light and further improve its light-emitting quality.
  • the three light-emitting grooves emitting RGB three-color light in the LED device can also be improved at the same time.
  • the LED device includes:
  • the second substrate is arranged opposite to the first substrate, a second U-shaped groove is provided on the second substrate, and the second U-shaped groove is arranged opposite to the first U-shaped groove;
  • the first light-emitting chip is arranged in the first U-shaped groove
  • the first metal reflective layer is arranged on the side wall of the first U-shaped groove and the inner wall of the second U-shaped groove;
  • the first quantum dot layer is arranged in the second U-shaped groove
  • the first light-emitting chip is a blue LED chip, and the first quantum dot layer is a red quantum dot layer.
  • the first light-emitting chip, the first metal reflective layer and the first quantum dot layer correspondingly emit red light, and in addition, correspondingly emit green light
  • the first substrate is also provided with a third U-shaped groove
  • the second substrate A fourth U-shaped groove is further provided thereon, and the third U-shaped groove is disposed opposite to the fourth U-shaped groove;
  • the LED device further includes:
  • the second light-emitting chip is arranged in the third U-shaped groove
  • the second metal reflective layer is arranged on the side wall of the third U-shaped groove and the inner wall of the fourth U-shaped groove;
  • the second quantum dot layer is arranged in the fourth U-shaped groove.
  • the second light-emitting chip is a blue LED chip, and the second quantum dot layer is a green quantum dot layer.
  • a fifth U-shaped groove is further provided on the first substrate, and a sixth U-shaped groove is further provided on the second substrate.
  • the fifth U-shaped groove is opposite to the sixth U-shaped groove.
  • the LED device further includes:
  • the third light-emitting chip is arranged in the fifth U-shaped groove, and the third light-emitting chip is a blue LED chip;
  • the third metal reflective layer is arranged on the side wall of the fifth U-shaped groove and the inner wall of the sixth U-shaped groove.
  • the LED device may not only include light-emitting grooves emitting RGB three-color light, but may include more light-emitting groove structures.
  • each light-emitting groove structure may refer to the light-emitting grooves in the above embodiments.
  • the improvement of the groove improves the luminous efficiency.
  • the embodiments of the present invention also provide a display device, and the display device includes the LED devices as described in the foregoing embodiments.
  • the performance of the display device is further improved.
  • each of the above units or structures can be implemented as independent entities, or can be combined arbitrarily, and implemented as the same or several entities.
  • each of the above units or structures please refer to the previous method embodiments. No longer.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Devices (AREA)

Abstract

L'invention concerne un dispositif à DEL et une unité d'affichage. Une couche réfléchissante métallique (106) et un point quantique (107) sont agencés dans une rainure d'émission de lumière du dispositif à DEL, ce qui permet d'augmenter les trajets de réflexion de lumière, d'améliorer efficacement l'utilisation d'énergie et la luminosité de la lumière requise, de réduire la consommation d'énergie, de réduire l'utilisation et le coût du matériau, et en même temps de bloquer l'oxygène de l'eau de façon à garantir la fiabilité de l'application de points quantiques.
PCT/CN2019/083187 2019-04-03 2019-04-18 Dispositif à del et unité d'affichage WO2020199255A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910263990.0 2019-04-03
CN201910263990.0A CN110034226A (zh) 2019-04-03 2019-04-03 Led器件及显示装置

Publications (1)

Publication Number Publication Date
WO2020199255A1 true WO2020199255A1 (fr) 2020-10-08

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WO (1) WO2020199255A1 (fr)

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Publication number Priority date Publication date Assignee Title
CN115715102B (zh) * 2022-11-23 2023-10-20 惠科股份有限公司 量子点器件和显示装置

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US20110141716A1 (en) * 2008-01-31 2011-06-16 Osram Opto Semiconductors Gmbh Illumination Device for Backlighting a Display, and a Display Comprising such an Illumination Device
CN105098039A (zh) * 2015-06-05 2015-11-25 青岛海信电器股份有限公司 一种量子点发光元件、背光模组和显示装置
CN108257949A (zh) * 2018-01-24 2018-07-06 福州大学 可实现光效提取和色彩转换微米级led显示装置及制造方法
CN208284497U (zh) * 2018-06-01 2018-12-25 佛山市国星光电股份有限公司 一种led器件、背光灯条和背光模组

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RU2502917C2 (ru) * 2011-12-30 2013-12-27 Закрытое Акционерное Общество "Научно-Производственная Коммерческая Фирма "Элтан Лтд" Светодиодный источник белого света с комбинированным удаленным фотолюминесцентным конвертером
KR102620357B1 (ko) * 2016-12-05 2024-01-04 삼성전자주식회사 디스플레이 장치
CN109494289B (zh) * 2017-09-11 2020-08-11 行家光电股份有限公司 应用量子点色彩转换的发光装置及其制造方法
CN108279528B (zh) * 2018-01-17 2021-05-28 惠州市华星光电技术有限公司 一种背光源

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Publication number Priority date Publication date Assignee Title
US20110141716A1 (en) * 2008-01-31 2011-06-16 Osram Opto Semiconductors Gmbh Illumination Device for Backlighting a Display, and a Display Comprising such an Illumination Device
CN105098039A (zh) * 2015-06-05 2015-11-25 青岛海信电器股份有限公司 一种量子点发光元件、背光模组和显示装置
CN108257949A (zh) * 2018-01-24 2018-07-06 福州大学 可实现光效提取和色彩转换微米级led显示装置及制造方法
CN208284497U (zh) * 2018-06-01 2018-12-25 佛山市国星光电股份有限公司 一种led器件、背光灯条和背光模组

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