WO2020192452A1

WO2020192452A1 - Conductive structure, touch structure, and touch display device

Info

Publication number: WO2020192452A1
Application number: PCT/CN2020/079277
Authority: WO
Inventors: 刘欢; 杨忠正; 曾亭; 胡海峰; 陈军; 许占齐; 董万如; 陈闰; 梁超
Original assignee: 京东方科技集团股份有限公司; 合肥鑫晟光电科技有限公司
Priority date: 2019-03-28
Filing date: 2020-03-13
Publication date: 2020-10-01
Also published as: CN109917968A

Abstract

A conductive structure. The conductive structure comprises a conductive layer, and a modulation layer and a blackening layer that are stacked on one side of the conductive layer. The modulation layer is far away from the conductive layer with respect to the blackening layer, and a light absorption coefficient of the modulation layer is less than that of the blackening layer.

Description

Conductive structure, touch control structure and touch display device

This application claims the priority of the Chinese patent application filed on March 28, 2019, the application number is 201910242256.6, and the invention title is "a conductive structure, touch structure and touch display device", the entire content of which is incorporated by reference In this application.

Technical field

The present disclosure relates to the field of display technology, and in particular to a conductive structure, a touch control structure, and a touch display device.

Background technique

In the touch display device, in order to reduce the resistance of the touch electrode and increase the signal transmission speed of the touch electrode, the touch electrode is often designed as a metal grid. Since the metal mesh has a high reflectivity to light, a lot of light hitting the metal mesh will be reflected, which affects the display effect of the touch display device.

Summary of the invention

In one aspect, a conductive structure is provided. The conductive structure includes a conductive layer, and a modulation layer and a blackening layer stacked on one side of the conductive layer. The modulation layer is far from the conductive layer with respect to the blackening layer, and the absorption coefficient of the modulation layer is smaller than the absorption coefficient of the blackening layer.

In some embodiments, the absorption coefficient of the modulation layer is 0˜1.0, and the absorption coefficient of the blackening layer is 1.0˜2.0.

In some embodiments, the thickness of the modulation layer ranges from 30 nm to 100 nm, and the thickness of the blackening layer ranges from 30 nm to 100 nm.

In some embodiments, the material of the conductive layer is metal or alloy.

In some embodiments, the material of the modulation layer is one or more of indium zinc metal oxide, indium zinc alloy oxide, indium tin metal oxide, and indium tin alloy oxide.

In some embodiments, the thickness of the modulation layer is 60 nm.

In some embodiments, the material of the blackening layer is one or more of molybdenum oxide, molybdenum nitride, oxynitride, molybdenum niobium oxide, molybdenum niobium nitride, and molybdenum niobium oxynitride.

In some embodiments, the thickness of the blackening layer is 45 nm.

In some embodiments, the material of the conductive layer is one or more of aluminum, aluminum alloy, silver, silver alloy, copper, and copper alloy.

In some embodiments, the conductive structure further includes a protective layer disposed on a side of the conductive layer away from the blackened layer, the protective layer being configured to prevent the conductive layer from being oxidized.

In some embodiments, the material of the protective layer is one or two of molybdenum and molybdenum-niobium alloy.

In another aspect, there is provided a touch structure including a plurality of touch electrodes, at least one of the touch electrodes is a conductive grid, and the conductive grid includes a plurality of intersecting conductive lines; at least one conductive line includes the above The conductive structure described in any embodiment.

In some embodiments, the plurality of touch electrodes includes: a plurality of first touch electrodes extending in a first direction; a plurality of second touch electrodes extending in a second direction; and the plurality of first touch electrodes The control electrode and the plurality of second touch electrodes cross and are insulated from each other.

In another aspect, a touch display device is provided, including: a substrate, and the touch structure according to any one of the foregoing embodiments disposed on the substrate.

Description of the drawings

In order to explain the technical solutions of the present disclosure more clearly, the following will briefly introduce the drawings that need to be used in some embodiments of the present disclosure. Obviously, the drawings in the following description are merely appendices to some embodiments of the present disclosure. Figures, for those of ordinary skill in the art, other drawings can be obtained based on these drawings. In addition, the drawings in the following description may be regarded as schematic diagrams, and are not limitations on the actual size of the products involved in the embodiments of the present disclosure, the actual process of the method, and the actual timing of the signals.

FIG. 1a is a structural diagram of a liquid crystal display device according to an embodiment of the present disclosure;

FIG. 1b is a structural diagram of a liquid crystal display device according to an embodiment of the present disclosure;

FIG. 1c is a structural diagram of a liquid crystal display device according to an embodiment of the present disclosure;

2a is a structural diagram of an electroluminescence display device or a photoluminescence display device according to an embodiment of the present disclosure;

2b is a structural diagram of an electroluminescence display device or a photoluminescence display device according to an embodiment of the present disclosure;

FIG. 3a is a structural diagram of a touch structure according to an embodiment of the present disclosure;

Figure 3b is an enlarged view of A in Figure 3a;

Fig. 4 is a structural diagram of a conductive structure provided according to some embodiments of the present disclosure;

FIG. 5 is a graph of reflectivity of a conductive structure to light of different wavelengths according to some embodiments of the present disclosure;

FIG. 6 is a structural diagram of forming a plurality of conductive structures on a substrate according to some embodiments of the present disclosure;

FIG. 7a is a curve of the relationship between the thickness of the modulation layer and the reflectance provided according to some embodiments of the present disclosure;

FIG. 7b is a curve of the relationship between the thickness of the blackening layer and the reflectance provided according to some embodiments of the present disclosure;

FIG. 8 is a structural diagram of a conductive structure provided according to some embodiments of the present disclosure.

detailed description

The technical solutions in some embodiments of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments provided in the present disclosure, all other embodiments obtained by a person of ordinary skill in the art fall within the protection scope of the present disclosure.

Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and other forms such as the third-person singular form "comprises" and the present participle form "comprising" are Interpreted as open and inclusive means "including, but not limited to." In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "examples", "specific examples" "example)" or "some examples" are intended to indicate that a specific feature, structure, material, or characteristic related to the embodiment or example is included in at least one embodiment or example of the present disclosure. The schematic representations of the above terms do not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics described may be included in any one or more embodiments or examples in any suitable manner.

Hereinafter, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of these features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

In describing some embodiments, the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", " The orientation or positional relationship indicated by “bottom”, “inner”, “outer”, etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present disclosure and simplifying the description, and does not indicate or imply the device or The element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present disclosure.

In describing some embodiments, the expressions "coupled" and "connected" and their extensions may be used. For example, the term "connected" may be used when describing some embodiments to indicate that two or more components are in direct physical or electrical contact with each other. As another example, the term “coupled” may be used when describing some embodiments to indicate that two or more components have direct physical or electrical contact. However, the term "coupled" or "communicatively coupled" may also mean that two or more components are not in direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the content herein.

"At least one of A, B, and C" has the same meaning as "at least one of A, B, or C", and both include the following combinations of A, B, and C: only A, only B, only C, A and B The combination of A and C, the combination of B and C, and the combination of A, B and C.

"A and/or B" includes the following three combinations: A only, B only, and the combination of A and B.

In some cases, embodiments involving "row direction" can be implemented in the case of "column direction" and so on, and vice versa. Rotating or mirroring the solution described in the present disclosure by 90° also belongs to the scope of rights claimed by the present disclosure.

The embodiments of the present disclosure provide a touch display device. The touch display device may be a liquid crystal display (LCD); the touch display device may also be an electroluminescence display device or a photoluminescence display device.

In the case that the touch display device is an electroluminescent display device, the electroluminescent display device may be an organic light-emitting diode (OLED) or a quantum dot electroluminescent display device (Quantum Dot Light). Emitting Diodes, QLED for short). In the case where the display device is a photoluminescence display device, the photoluminescence display device may be a quantum dot photoluminescence display device.

When the touch display device is a liquid crystal display device, as shown in FIGS. 1 a, 1 b and 1 c, the touch display device includes a cover glass 2, a touch structure 10, a liquid crystal display panel 1 and a backlight assembly 15. The backlight assembly 15 is used to provide light to the liquid crystal display panel 1. The liquid crystal display panel 1 includes an array substrate 11, an alignment substrate 12, and a liquid crystal layer 13 disposed between the array substrate 11 and the alignment substrate 12.

In some embodiments, as shown in FIGS. 1a, 1b, and 1c, the array substrate 11 includes a first substrate 110 and a plurality of sub-pixels disposed on the first substrate 110. Each of the plurality of sub-pixels includes a thin film transistor 111 and a pixel electrode 112. The thin film transistor 111 includes an active layer, a source electrode, a drain electrode, a gate electrode, and a gate insulating layer, and the source electrode and the drain electrode are respectively in contact with the active layer. The pixel electrode 112 is electrically connected to the drain of the thin film transistor 111.

In some embodiments, the array substrate 11 further includes a common electrode 113 disposed on the first substrate 110. The pixel electrode 112 and the common electrode 113 can be arranged on the same layer or on different layers.

In the case where the pixel electrode 112 and the common electrode 113 are arranged in the same layer, the pixel electrode 112 and the common electrode 113 are both comb-tooth structures including a plurality of strip-shaped sub-electrodes.

In the case where the pixel electrode 112 and the common electrode 113 are provided in different layers, as shown in FIGS. 1a, 1b, and 1c, a first insulating layer 114 is provided between the pixel electrode 112 and the common electrode 113. Exemplarily, the common electrode 113 is disposed between the film layer where the source and drain of the thin film transistor 111 are located (ie, the source and drain electrode layer) and the pixel electrode 112. It can be understood that, in the case where the common electrode 113 is disposed between the source and drain electrode layers and the pixel electrode 112, a fourth insulating layer 115 is further disposed between the common electrode 113 and the source and drain electrode layers.

In some embodiments, the counter substrate 12 includes a common electrode 113, that is, the common electrode 113 is disposed on the counter substrate 12. The embodiments provided in the present disclosure take the array substrate 11 including the common electrode 113 as an example for illustration.

The thin film transistor 111 in the embodiment of the present disclosure may be a bottom gate type thin film transistor or a top gate type thin film transistor. In the drawings of the embodiments of the present disclosure, the thin film transistor 111 is a bottom-gate thin film transistor as an example for illustration.

As shown in FIG. 1a, FIG. 1b and FIG. 1c, the box substrate 12 includes a second substrate 120 and a color filter layer 121 disposed on the second substrate 120. In this case, the box substrate 12 may also be referred to as a color filter (CF). The color filter layer 121 at least includes a plurality of red photoresist units, a plurality of green photoresist units, and a plurality of blue photoresist units. The multiple red photoresist units, the multiple green photoresist units, and the multiple blue photoresist units are directly opposite to the multiple sub-pixels on the array substrate 11 respectively. The box substrate 12 further includes a black matrix pattern 122 disposed on the second substrate 120, and the black matrix pattern 122 is used to space a plurality of red photoresist units, a plurality of green photoresist units, and a plurality of blue photoresist units.

1a, 1b and 1c, the liquid crystal display panel 1 further includes an upper polarizer 14 arranged on the side of the cell substrate 12 away from the liquid crystal layer 13 and a lower polarizer 14 arranged on the side of the array substrate 11 away from the liquid crystal layer 13.片15.

In some embodiments, as shown in FIG. 1a, the touch control structure 10 is arranged outside the liquid crystal display panel 1, that is, between the cover glass 2 and the upper polarizer 14. In this case, the touch display device is called It is an external touch display device.

In other embodiments, as shown in FIGS. 1b and 1c, the touch structure 10 is disposed in the liquid crystal display panel 1. As shown in FIG. 1b, the touch structure 10 may be disposed between the upper polarizer 14 and the aligning substrate 12. In this case, the touch display device is called an external (On cell) touch display device. Alternatively, as shown in FIG. 1c, the touch structure 10 is disposed between the first substrate 110 and the second substrate 120, for example, disposed on the first substrate 110. In this case, the touch display device is called Embedded (In cell) touch display device.

In the case that the touch display device is an electroluminescence display device or a photoluminescence display device, as shown in FIGS. 2a and 2b, the electroluminescence display device or the photoluminescence display device includes electroluminescence display panels arranged in sequence 3 or photoluminescence display panel 3, touch structure 10, polarizer 4, first optical adhesive (Optically Clear Adhesive, OCA for short) 5 and cover glass 2.

Among them, the electroluminescence display panel 3 or the photoluminescence display panel 3 includes a display substrate 31 and an encapsulation layer 32 for encapsulating the display substrate 31. Here, the packaging layer 32 may be a packaging film or a packaging substrate.

As shown in FIGS. 2a and 2b, each sub-pixel of the aforementioned display substrate 31 includes a light-emitting device and a driving circuit provided on the third substrate 310, and the driving circuit includes a plurality of thin film transistors 111. The light-emitting device includes an anode 311, a light-emitting functional layer 312, and a cathode 313, and the anode 311 is electrically connected to the drain of the thin film transistor 111 as a driving transistor among the plurality of thin film transistors 111. The display substrate 31 further includes a pixel defining layer 314. The pixel defining layer 314 includes a plurality of opening regions, and one light emitting device is disposed in one opening region. In some embodiments, the light-emitting functional layer 312 includes a light-emitting layer. In some other embodiments, the light-emitting functional layer 312 includes, in addition to the light-emitting layer, an electron transport layer (election transporting layer, ETL), an electron injection layer (election injection layer, EIL), and a hole transport layer (hole transporting layer) layer, HTL for short) and one or more layers of hole injection layer (HIL for short).

As shown in FIG. 2a, the display substrate 31 further includes a flat layer 315 provided between the thin film transistor 111 and the anode 311.

When the touch display device is an electroluminescence display device or a photoluminescence display device, the touch display device may be a top-emission display device. In this case, the anode 311 close to the third substrate 310 is opaque and far away from the third substrate 310. The cathode 313 of the tri-substrate 310 is transparent or semi-transparent. The touch display device may also be a bottom emission display device. In this case, the anode 311 close to the third substrate 310 is transparent or translucent, and the cathode 313 far from the third substrate 310 is opaque; the touch display device is also It may be a double-sided light emitting display device. In this case, the anode 311 close to the third substrate 310 and the cathode 313 far from the third substrate 310 are both transparent or semi-transparent.

It can be understood that when the touch display device is an electroluminescence display device or a photoluminescence display device, the touch display device can be easily manufactured into a flexible display device.

In the case that the touch display device is an electroluminescence display device or a photoluminescence display device, in some embodiments, as shown in FIG. 2a, the touch structure 10 is directly disposed on the encapsulation layer 32, that is, the touch structure No other film layer is provided between 10 and the encapsulation layer 32. In other embodiments, as shown in FIG. 2 b, the touch structure 10 is disposed on the substrate 6, and the substrate 6 is attached to the packaging layer 32 through the second optical glue 7. The material of the substrate 6 may be, for example, polyethylene terephthalate (PET), polyimide (PI), cyclic olefin polymer (Cyclo Olefin Polymer, COP), etc. Here, as shown in FIG. 2a, when the touch structure 10 is directly disposed on the encapsulation layer 32, the thickness of the touch display device is small, which is beneficial to achieve lightness and thinness.

The embodiment of the present disclosure provides a touch structure 10, which can be applied to the above-mentioned touch display device. The arrangement position of the touch structure 10 in the touch display device and the touch display device except for the touch display device have been described in detail above. Structures other than structure 10 will not be described in detail below.

Referring to FIG. 3a, the touch structure 10 includes a plurality of touch electrodes 10A, and at least one of the touch electrodes 10A is a conductive grid. Referring to FIG. 3b, the conductive grid includes a plurality of conductive lines 103 that cross (for example, cross horizontally and vertically).

Compared with the indium tin metal oxide (ITO) touch electrode in the related art, the structure of the touch electrode 10A is arranged as a metal conductive grid, which is beneficial to reduce the resistance of the touch electrode 10A and increase the signal on the touch electrode 10A The transmission speed of the touch display device is improved to improve the touch performance of the touch display device.

Exemplarily, as shown in FIG. 3a, the plurality of touch electrodes 10A includes a plurality of first touch electrodes 101 extending in a first direction and a plurality of second touch electrodes 102 extending in a second direction. The plurality of first touch electrodes 101 and the plurality of second touch electrodes 102 cross and are insulated from each other. The structures of the plurality of first touch electrodes 101 and the plurality of second touch electrodes 102 are all conductive grids.

It should be noted that the intersection of the plurality of first touch electrodes 101 and the plurality of second touch electrodes 102 means that the extending direction of the first touch electrode 101 intersects the extending direction of the second touch electrode 102, that is, the first The direction intersects the second direction. For example, in some embodiments, the first direction is perpendicular to the second direction.

The plurality of first touch electrodes 101 and the plurality of second touch electrodes 102 are insulated from each other. It means that, at least at the position where the first touch electrode 101 and the second touch electrode 102 intersect, the first touch electrode 101 and the second touch electrode 102 An insulating layer is arranged between the two touch electrodes 102. For example, in some embodiments, an insulating layer is provided between the conductive layer where the plurality of first touch electrodes 101 are located and the conductive layer where the plurality of second touch electrodes 102 are located.

In the related art, the material of the touch electrode 10A of the aforementioned touch structure 10 is one or more of aluminum, aluminum alloy, silver, and silver alloy, that is, the conductive wire only includes a conductive layer. Since aluminum, aluminum alloy, silver, and silver alloy have relatively high reflectivity, a lot of ambient light irradiated on the touch structure 10 will be reflected, which affects the display effect of the display device. For example, referring to FIGS. 2a and 2b, taking the above-mentioned display device as a top-emission display device as an example, when ambient light is irradiated on the touch structure 10, the touch structure 10 reflects the ambient light, thereby reducing the display device The display effect.

In addition, metals or alloys such as aluminum, aluminum alloys, silver, and silver alloys have large reflectivity fluctuations in the wavelength range of 380nm to 780nm, and the relationship curve between wavelength and reflectivity has peaks and troughs. For example, in the wavelength range of 380 nm to 780 nm, the reflectance is 10% to 25%, and when the wavelength is 550 nm, the reflectance can reach 12% to 16%. The human eye is more sensitive to wavelengths of 380 nm to 780 nm, and is most sensitive to light with a wavelength of 550 nm, which is likely to cause ghosting of the touch structure 10 during display of the display device.

The embodiment of the present disclosure also provides a conductive structure 01. The conductive structure 01 has a low reflectivity, and the reflectivity fluctuation thereof is small. When the conductive structure 01 is applied to a touch display device, for example, at least one conductive line 103 of the plurality of conductive wires 103 includes the conductive structure 01, which can improve the display effect of the display device.

4, the conductive structure 01 includes a conductive layer 300, and a modulation layer 100 and a blackening layer 200 stacked on one side of the conductive layer 300. The modulation layer 100 is far away from the conductive layer 300 relative to the blackening layer 200. That is, the modulation layer 100, the blackening layer 200, and the conductive layer 300 are stacked in this order. It can also be said that the blackening layer 200 is provided between the conductive layer 300 and the modulation layer 100.

In the case where the conductive structure 01 is applied to a touch display device, for example, in the case where a plurality of conductive lines 103 in the conductive grid of the first touch electrode 101 and the second touch electrode 102 include the conductive structure 01, the conductive layer 300 Relative to the modulation layer 100 and the blackened layer 200, it is far away from the light emitting surface (also referred to as the display surface) of the touch display device. In other words, the modulation layer 100 is close to the light-emitting surface of the touch display device relative to the blackening layer 200 and the conductive layer 300. Based on this, ambient light enters the modulation layer 100, the blackened layer 200, and the conductive layer 300 sequentially.

In the conductive structure 01, the conductive layer 300 is used to conduct electricity, and the blackening layer 200 and the modulation layer 100 are used to absorb light, modulate light, and reduce reflected light.

It should be noted that the blackening layer 200 and the modulation layer 100 can effectively shield the conductive layer 300, and prevent ambient light from directly irradiating the conductive layer 300, thereby preventing the conductive layer 300 from directly reflecting the ambient light and reducing the conductive structure. The reflection of ambient light.

Secondly, the blackened layer 200 has a light-absorbing function, and the blackened layer 200 can be used to absorb ambient light, thereby reducing the reflection of the conductive structure 01 to the ambient light.

In some embodiments, during the process of making the blackening layer 200, an atmosphere such as oxygen (O ₂ ) and/or nitrogen (N ₂ ) is introduced. In the place close to the oxygen outlet, due to the high oxygen concentration, the blackening layer 200 contains more oxygen in the place close to the oxygen outlet; in the place far away from the oxygen outlet, the oxygen concentration is small, so it is far away from the oxygen. The oxygen content contained in the blackened layer 200 at the outlet is less. Near the nitrogen outlet, the blackening layer 200 contains more nitrogen due to the higher nitrogen concentration due to the higher nitrogen outlet; and the place far away from the nitrogen outlet, because the nitrogen concentration is smaller, it is far away from the nitrogen The content of nitrogen contained in the blackened layer 200 at the output port is small. As a result, the distribution of nitrogen and oxygen contained in the blackened layer 200 is uneven, resulting in poor coating uniformity and stability of the blackened layer 200.

If the conductive structure 01 only includes the conductive layer 300 and the blackened layer 200, if the coating uniformity and stability of the blackened layer 200 is not good, the reflectivity at different positions of the conductive structure 01 will be different. In the embodiment of the present disclosure, since the conductive structure 01 includes a modulation layer 100 in addition to the conductive layer 300 and the blackening layer 200, since the modulation layer 100 can also reflect light, it can reflect the conductive structure 01 at different positions. The light is modulated so that the reflectivity of light at different positions of the conductive structure 01 is the same, thereby improving the uniformity of light reflected at different positions of the conductive structure 01.

In this way, when the conductive structure 01 is applied to a touch display device, for example, in the case where a plurality of conductive lines 103 in the conductive grid of the first touch electrode 101 and the second touch electrode 102 include the conductive structure 01, Can achieve the effect of de-shading, thereby improving the display effect.

On this basis, the absorption coefficient of the modulation layer 100 is smaller than the absorption coefficient of the blackening layer 200. For example, the absorption coefficient of the modulation layer 100 is 0 to 1.0, and the absorption coefficient of the blackening layer 200 is 1.0 to 2.0. When ambient light irradiates the conductive structure 01, the incident light generates reflected light on the surface of the modulation layer 100 away from the conductive layer 300 and the surface of the blackened layer 200 away from the conductive layer 300, respectively. Since the absorption coefficient of the modulation layer 100 is smaller than that of the blackening layer 200, the reflected light generated on the surface of the modulation layer 100 away from the conductive layer 300 interferes with the reflected light generated on the surface of the blackening layer 200 away from the conductive layer 300. Therefore, the reflection of the conductive structure 01 to external ambient light is reduced, that is, the reflectivity of the conductive structure 01 is reduced.

The reflectance of the conductive structure 01 was tested in the wavelength range of 380 nm to 780 nm, and the test result is shown in FIG. 5. It can be seen from FIG. 5 that the reflectance of the conductive structure 01 is 5% to 7% in the wavelength range of 380 nm to 780 nm, and the reflectance of the conductive structure 01 is 4% to 6% when the wavelength is 550 nm. It can be seen that the reflectivity of the conductive structure 01 in the embodiment of the present disclosure is relatively small, and the reflectivity fluctuation range of the conductive structure 01 is relatively small.

In this way, the conductive structure 01 is applied to a touch display device, for example, the conductive structure 01 is included in the conductive lines 103 in the conductive grid of the first touch electrode 101 and the second touch electrode 102, which can reduce reflected light. The reflection efficiency is reduced, and the display effect of the display device is improved.

In addition, since the reflectivity fluctuation of the conductive structure 01 is small, there are no peaks and troughs in the relationship curve of wavelength and reflectivity. For example, in the wavelength range of 380 nm to 780 nm, the reflectance is 5% to 7%, and when the wavelength is 550 nm, the reflectance is 4% to 6%. When the conductive structure 01 is applied to a touch display device, for example, in the case where a plurality of conductive lines 103 in the conductive grid of the first touch electrode 101 and the second touch electrode 102 include the conductive structure 01, it can also achieve The effect of subtraction, thereby improving the display effect.

In some embodiments, the thickness of the modulation layer 100 ranges from 30 nm to 100 nm, and the thickness of the blackening layer 200 ranges from 30 nm to 100 nm. When the thickness of the modulation layer 100 is set to 30nm-100nm, and the thickness of the blackening layer 200 is set to 30nm-100nm, when light hits the conductive structure 01, optical interference occurs after being reflected by the blackening layer 200 and the modulation layer 100 The effect is better, which can further reduce the reflected light, reduce the reflection efficiency, and further reduce the fluctuation range of the reflectivity.

In some embodiments, the thickness of the modulation layer 100 can be selected from 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 85 nm, 100 nm, etc., for example.

When the thickness and material of the conductive layer 300, the thickness and material of the blackening layer 200, and the material of the modulation layer 100 are the same, the relationship curve between the thickness of the modulation layer 100 and the reflectivity of the conductive structure 01 is tested. The obtained relationship curve between the thickness of the modulation layer 100 and the reflectivity of the conductive structure 01 is shown in FIG. 7a.

It can be seen from FIG. 7a that when the thickness of the modulation layer 100 is 20 nm, 30 nm, 40 nm, 50 nm, and 60 nm, the reflectance of the conductive structure 01 is 12%, 10%, 7%, 5.5%, and 5.0%, respectively. When the thickness of the modulation layer 100 ranges from 50 nm to 60 nm, the reflectance of the conductive structure 01 is 5.5% to 5.0%, and the fluctuation range of the reflectance is within 1%, and the fluctuation is small.

Based on this, in some embodiments, the thickness of the modulation layer 100 ranges from 50 nm to 60 nm, for example, 60 nm. In this way, when the conductive structure 01 is applied to a touch display device, for example, in the case where a plurality of conductive lines 103 in the conductive grid of the first touch electrode 101 and the second touch electrode 102 include the conductive structure 01, When the thickness range of the modulation layer 100 is set to 50 nm-60 nm, the fluctuation range of the reflectivity of the conductive structure 01 is smaller, so that the anti-shading effect of the conductive structure 01 is further improved, thereby further improving the display effect.

In some embodiments, the thickness of the blackening layer 200 can be selected from 20 nm, 30 nm, 35 nm, 45 nm, 50 nm, 55 nm, 85 nm, 100 nm, etc., for example.

When the thickness and material of the conductive layer 300, the thickness and material of the modulation layer 100, and the material of the blackened layer 200 are the same, the relationship between the thickness of the blackened layer 200 and the reflectivity of the conductive structure 01 is tested. The obtained relationship curve between the thickness of the blackened layer 200 and the reflectivity of the conductive structure 01 is shown in FIG. 7b.

It can be seen from FIG. 7b that when the thickness of the blackened layer 200 is 35 nm, 45 nm, and 55 nm, the reflectivity of the conductive structure 01 is 6.27%, 5%, and 6.89%, respectively. When the thickness of the blackened layer 200 is 45 nm, the reflectivity of the conductive structure 01 is small.

Based on this, in some embodiments, the thickness of the blackened layer 200 is 45 nm. In this way, when the conductive structure 01 is applied to a touch display device, for example, in the case where a plurality of conductive lines 103 in the conductive grid of the first touch electrode 101 and the second touch electrode 102 include the conductive structure 01, When the thickness of the blackened layer 200 is set to 45 nm, the reflectivity of the conductive structure 01 is relatively small, which reduces the reflection of the conductive structure 01 to external ambient light, thereby further improving the display effect.

In some embodiments, the material of the conductive layer is metal or alloy. For example, the material of the conductive layer is one or more of aluminum, aluminum alloy, silver, silver alloy, copper (Cu), and copper alloy.

The embodiment of the present disclosure does not limit the material of the modulation layer 100, and the material can be selected based on the standard that the absorption coefficient of the modulation layer 100 is 0-1.0.

Exemplarily, the material of the modulation layer 100 may be indium zinc oxide (Indium Zinc Oxide, IZO for short), indium zinc alloy oxide, indium tin metal oxide ((Indium Tin Oxide, ITO for short), and indium tin oxide for short. One or more of them. Among them, the metals in indium-zinc metal oxide (Metal) are only indium and zinc, and the metals in indium-zinc alloy oxides include indium and zinc, as well as other metals. The only metals in the material are indium and tin. In addition to indium and tin, there are other metals in the indium tin alloy oxide.

In the case where the material of the modulation layer 100 is one or more of indium zinc metal oxide, indium zinc alloy oxide, indium tin metal oxide, and indium tin alloy oxide, since indium zinc metal oxide, indium zinc oxide Alloy oxides, indium tin metal oxides, and indium tin alloy oxides are all conductive materials. Compared with the related art, the conductive wire only includes a conductive layer. Therefore, the embodiment of the present disclosure is equivalent to connecting a conductive modulator in parallel on the conductive layer 300. The layer 100 can therefore reduce the resistance of the conductive structure 01. In the case where the conductive structure 01 is applied to a touch display device, and the conductive lines in the conductive grid of the first touch electrode 101 and the second touch electrode 102 include the conductive structure 01, since the resistance of the conductive structure 01 is reduced, Therefore, the signal loss on the first touch electrode 101 and the second touch electrode 102 can be reduced, and the touch accuracy can be improved.

The embodiment of the present disclosure does not limit the material of the blackened layer 200, and the material can be selected based on the standard that the absorption coefficient of the blackened layer 200 is 1.0 to 2.0.

Exemplarily, the material of the blackening layer 200 may be one or more of molybdenum oxide, molybdenum nitride, oxynitride, molybdenum niobium oxide, molybdenum niobium nitride, and molybdenum niobium oxynitride.

In some embodiments, as shown in FIG. 8, the conductive structure 01 further includes a protective layer 500 disposed on the side of the conductive layer 300 away from the blackening layer 200, and the protective layer 500 is used to prevent the conductive layer 300 from being oxidized.

The material of the protective layer 500 may be, for example, a metal or alloy that has stable chemical properties and is not easily oxidized. For example, the material of the protective layer 500 is one or two of molybdenum (Mo) and molybdenum-niobium (MoNb) alloy.

When the protective layer 500 is not provided on the conductive layer 300, the conductive layer 300 is liable to be corroded or oxidized, thereby causing the resistance of the conductive layer 300 to increase or the conductive layer 300 to be easily broken. As a result, the conductive structure is applied to the touch display device In the case where the conductive lines in the conductive grids of the first touch electrode 101 and the second touch electrode 102 include the conductive structure 01, an increase in the resistance or disconnection of the conductive lines will affect the transmission of touch signals. In the embodiment of the present disclosure, since the protective layer 500 is provided on the side of the conductive layer 300 away from the blackening layer 200, the protective layer 500 can prevent the conductive layer 300 from being oxidized or corroded, thereby preventing the conductive structure from being applied to the touch display device In the case where the conductive lines in the conductive grids of the first touch electrode 101 and the second touch electrode 102 include the conductive structure 01, the resistance of the conductive line increases or the line is broken.

On this basis, when the material of the protective layer 500 is metal and alloy, since the protective layer 500 is conductive, compared to the conductive wire in the related art, the conductive structure 01 provided by the embodiment of the present disclosure is equivalent to A conductive protective layer 500 is connected in parallel on the conductive layer 300, so the resistance value of the conductive structure 01 can be reduced. When the conductive structure 01 is applied to a touch display device, and the conductive lines in the conductive grids of the first touch electrode 101 and the second touch electrode 102 include the conductive structure 01, since the resistance of the conductive structure 01 is reduced, Therefore, the signal loss on the first touch electrode 101 and the second touch electrode 102 can be reduced, and the touch accuracy can be improved.

When the conductive structure 01 is used in a touch display device, the conductive structure 01 will contact the film or substrate. If the adhesion of the conductive structure 01 is not good, the conductive structure 01 will easily fall off the film or substrate. As a result, the normal display of the touch display device is affected. Therefore, the adhesion of the conductive structure 01 is an important indicator that affects the performance of the conductive structure 01.

The adhesion of the conductive structure 01 provided by the embodiments of the present disclosure is tested as follows:

As shown in FIG. 6, a plurality of conductive structures 01 arranged in a matrix are formed on a substrate 400, and each conductive structure 01 is square (for example, 1mm×1mm), and the conductive structure 01 is glued with tape to test the conductive structure 01 The adhesion.

When the conductive layer 300 is in contact with the substrate 400, the adhesion of the conductive structure 01 is equivalent to the adhesion of the conductive layer in the related art.

When the modulation layer 100 is in contact with the substrate 400, a plurality of conductive structures 01 arranged in a matrix and in contact with the substrate 400 are formed on the substrate 400. Adhere the conductive structure 01 with tape, and test the adhesion of the conductive structure 01. The test shows that the adhesion of the conductive structure 01 is greater than that of the conductive layer in the related art. That is, when the modulation layer 100 is in contact with the substrate 400, compared with the related art, the conductive structure 01 provided by the embodiment of the present disclosure has higher adhesion.

In this way, the conductive structure 01 is applied to a touch display device. For example, the conductive lines 103 in the conductive grid of the first touch electrode 101 and the second touch electrode 102 include the conductive structure 01. The adhesion is high, thereby improving the firmness of the display device structure.

Taking the conductive structure 01 in which the modulation layer 100 contacts the substrate 400 as an example, the manufacturing process of forming a plurality of conductive structures 01 arranged in a matrix on the substrate 400 is described below:

A modulation layer 100 is first formed on the substrate 400, and then a blackening layer 200 is formed, and finally a conductive layer 300 is formed. The laminated structure is divided into a plurality of conductive structures 01 as shown in FIG. 6 with a tool knife. Each conductive structure 01 includes a modulation layer 100, a blackening layer 200, and a conductive layer 300 which are sequentially stacked and formed on a substrate 400.

The manufacturing process of the conductive structure 01 where the conductive layer 300 is in contact with the substrate 400 is similar to the manufacturing process of the conductive structure 01 where the modulation layer 100 is in contact with the substrate 400, and will not be repeated here.

The conductive structure 01 provided by the embodiments of the present disclosure can be applied to the display technology field as a component in a touch display device, and can also be applied to other fields, such as the field of optical devices, as a component in an optical instrument. Regarding this, the embodiments of the present disclosure will not be repeated.

When the conductive structure 01 is applied to a touch display device, the conductive lines in the conductive grid of the first touch electrode 101 and the second touch electrode 102 include the conductive structure 01, and the modulation layer 100 and the substrate of the conductive structure 01 In the case of bottom contact, the method of forming conductive lines in a conductive grid includes:

First, a modulation layer film, a blackening layer film and a conductive layer film are sequentially formed on the substrate. Then, a patterning process is performed on the modulation layer film, the blackening layer film and the conductive layer film (the patterning process includes photoresist coating, mask exposure, etching and development processes) to form conductive lines.

It should be noted that if the material of the modulation layer film is indium tin metal oxide or indium tin alloy oxide, the material of the blackened layer film is molybdenum oxide, molybdenum nitride, oxynitride, molybdenum niobium oxide, molybdenum niobium nitride One or more of niobium and molybdenum oxynitride, the material of the conductive layer film is one or more of aluminum, aluminum alloy, silver, silver alloy, copper, and copper alloy. Due to the etching of the blackened layer film and the conductive The etching solution of the layer film cannot be used to etch indium tin metal oxide or indium tin alloy oxide, so it is necessary to pattern the modulation layer film first, and then pattern the blackening layer film and the conductive layer film at the same time. , Requires secondary patterning process.

The material of the modulation layer film is indium zinc metal oxide or indium zinc alloy oxide, and the material of the blackening layer film is molybdenum oxide, molybdenum nitride, oxynitride, molybdenum niobium oxide, molybdenum niobium nitride, and molybdenum oxynitride. One or more of niobium, and when the material of the conductive layer film is one or more of aluminum, aluminum alloy, silver, silver alloy, copper, and copper alloy, due to the etching of the blackened layer film and the conductive layer The film etching solution can be used to etch indium zinc metal oxide or indium zinc alloy oxide. In this way, the blackened layer film, conductive layer film, and modulation layer film can be patterned at the same time, and only one patterning process is required. However, the manufacturing process of the conductive structure 01 is simplified. Based on this, in some embodiments, the material of the modulation layer 100 may be one or two of indium zinc metal oxide and indium zinc alloy oxide.

The above are only specific implementations of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art who thinks of changes or substitutions within the technical scope disclosed in the present disclosure shall cover Within the protection scope of this disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.

Claims

A conductive structure, including:

Conductive layer

A modulation layer and a blackening layer arranged on one side of the conductive layer are laminated, the modulation layer being far from the conductive layer with respect to the blackening layer, and the absorption coefficient of the modulation layer is smaller than that of the blackening layer coefficient.
The conductive structure according to claim 1, wherein the light absorption coefficient of the modulation layer is 0 to 1.0, and the light absorption coefficient of the blackening layer is 1.0 to 2.0.
The conductive structure according to claim 2, wherein the thickness of the modulation layer is in the range of 30 nm to 100 nm, and the thickness of the blackening layer is in the range of 30 nm to 100 nm.
The conductive structure according to claim 1 or 2, wherein the material of the conductive layer is metal or alloy.
The conductive structure according to claim 4, wherein the material of the conductive layer is one or more of aluminum, aluminum alloy, silver, silver alloy, copper, and copper alloy.
The conductive structure according to any one of claims 1 to 5, wherein the modulation layer is made of indium zinc metal oxide, indium zinc alloy oxide, indium tin metal oxide, and indium tin alloy oxide. One or more.
The conductive structure according to any one of claims 1 to 6, wherein the modulation layer has a thickness of 60 nm.
The conductive structure according to any one of claims 1 to 7, wherein the material of the blackened layer is molybdenum oxide, molybdenum nitride, oxynitride, molybdenum niobium oxide, molybdenum niobium nitride, and molybdenum niobium oxynitride. One or more of.
The conductive structure according to any one of claims 1 to 8, wherein the thickness of the blackened layer is 45 nm.
The conductive structure according to any one of claims 1-9, the conductive structure further comprising:

A protective layer disposed on a side of the conductive layer away from the blackening layer, and the protective layer is configured to prevent the conductive layer from being oxidized.
The conductive structure according to claim 10, wherein the material of the protective layer is one or two of molybdenum and molybdenum-niobium alloy.
A touch structure includes a plurality of touch electrodes, at least one of the touch electrodes is structured as a conductive grid, and the conductive grid includes a plurality of crossed conductive lines;

At least one conductive thread includes the conductive structure according to any one of claims 1-11.
The touch structure according to claim 12, wherein the plurality of touch electrodes comprises:

A plurality of first touch electrodes extending along the first direction;

A plurality of second touch electrodes extending along the second direction;

The plurality of first touch electrodes and the plurality of second touch electrodes cross and are insulated from each other.
A touch display device includes:

Substrate

The touch structure according to claim 12 or 13 disposed on the substrate.