CN107197627A - Conducting structures and its manufacture method - Google Patents

Conducting structures and its manufacture method Download PDF

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Publication number
CN107197627A
CN107197627A CN201680005431.4A CN201680005431A CN107197627A CN 107197627 A CN107197627 A CN 107197627A CN 201680005431 A CN201680005431 A CN 201680005431A CN 107197627 A CN107197627 A CN 107197627A
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China
Prior art keywords
conducting structures
darkening layer
metal
metal level
manufacture method
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CN201680005431.4A
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Chinese (zh)
Inventor
林振炯
闵进赫
金起焕
朴赞亨
李翻
李一翻
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LG Corp
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LG Chemical Co Ltd
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Publication date
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Publication of CN107197627A publication Critical patent/CN107197627A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/087—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0274—Optical details, e.g. printed circuits comprising integral optical means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Laminated Bodies (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

The present invention relates to a kind of conducting structures and its manufacture method.Comprised the following steps according to the manufacture method of the conducting structures of one embodiment of the invention：Metal level is formed on substrate；And darkening layer is formed on the metal level, wherein, the forming step of the darkening layer is by using CO2Reactive sputtering carry out.

Description

Conducting structures and its manufacture method
Technical field
This application claims the korean patent application No.10- submitted on 2 10th, 2015 in Korean Intellectual Property Office 2015-0020520 priority and rights and interests, the entire disclosure of which is herein incorporated by reference.
The application is related to a kind of conducting structures and its manufacture method.
Background technology
Generally, according to signal detection type, touch panel can classify as follows.In other words, it can be divided into and apply straight The resistor-type of the position pressed during stream voltage by the change detection of curtage value by pressure；The profit when applying alternating voltage Use capacity coupled capacitor type；Electromagnetic type of select location, etc. is detected according to voltage change when applying magnetic field.
Recently, as the increase of the demand to wide area touch panel plate is, it is necessary to which developing can realize with excellent visual Property (visibility) and meanwhile reduce electrode resistance large-scale touch panel technology.
The content of the invention
Technical problem
In the art, it is necessary to develop the technology of the performance for improving various types of touch panels.
Technical scheme
The exemplary of the application provides a kind of manufacture method of conducting structures, including：
Metal level is formed on substrate, and
Darkening layer is formed on the metal level,
Wherein, the formation of the darkening layer is by using CO2Reactive sputtering carry out.
The another exemplary embodiment of the present invention provides a kind of manufacture method of conducting structures, including：
Darkening layer is formed on substrate, and
Metal level is formed in the darkening layer,
Wherein, the formation of the darkening layer is by using CO2Reactive sputtering carry out.
The another exemplary embodiment of the present invention provides what a kind of manufacture method by the conducting structures was manufactured Conducting structures.
Another exemplary of the present invention provides a kind of conducting structures, including：
Substrate；
Metal level on the substrate is set；And
The darkening layer at least one surface of the metal level is arranged on,
Wherein, the darkening layer includes (CuOx)aCb, x is 0<In the range of x≤1, a+b=1, b is 0<The model of b≤0.1 In enclosing.
The another exemplary offer of the present invention is a kind of to include the electronic installation of the conducting structures.
Beneficial effect
Do not influence the electric conductivity of conductive pattern according to the conducting structures of the exemplary of the application, and pass through Improve absorbance, can prevent from reflecting and improving as caused by conductive pattern the shielding (concealment) of conductive pattern. In addition, in the conducting structures according to the exemplary of the application, darkening layer utilizes and uses CO2Reactive sputtering come Formed, as a result, utilized with darkening layer in the prior art and use O2Reactive sputtering compared come situation about being formed, can pass through suppress It is high-temperature denatured to provide a kind of darkening layer of stabilization, and can also provide a kind of improved work in terms of sedimentation rate Skill.
In addition, using conducting structures in accordance with an exemplary embodiment of the invention, can develop can with what is improved Depending on the electronic installation of property, such as touch panel, display device and solar cell.
Brief description of the drawings
Fig. 1 to Fig. 3 is respectively schematically to show to include darkening layer according to the exemplary of the application Conducting structures laminar structure；
Fig. 4 is to show that the conducting structures in embodiment 1 and comparative example 1 in accordance with an exemplary embodiment of the invention exist Reflectivity before and after heat treatment is with CO2Reacting gas or O2The figure of the change of the intrinsic standoff ratio (%) of reacting gas；
Fig. 5 is shown according to an exemplary of the invention by using CO2Reactive sputtering and formed Darkening layer composition distribution figure；
Fig. 6 is shown in the prior art by using O2Reactive sputtering formed by darkening layer composition distribution figure.
<Reference>
100：Substrate
200：Darkening layer
220：Darkening layer
300：Metal level
Embodiment
Hereinafter, the present invention will be described in further detail.
In this application, display device refers to TV, computer display etc. with being referred to as, and including forming the display member of image The housing of part and support display element.
As display element, Plasmia indicating panel (PDP), liquid crystal display (LCD), electrophoresis showed can be illustrated as Device, cathode-ray tube (CRT), OLED display etc..In display element, it can be provided for presenting the rgb pixel figure of image Case and additional filters.
Meanwhile, on display device, accelerate with smart mobile phone, tablet PC, IPTV etc. popularization, to not single The demand for the touch function for being changed into directly inputting equipment by human hand in the case of input equipment (such as keyboard or remote control) gradually increases Plus.Furthermore, it is necessary to multi-touch function and the specified point identification that can be write.
Current commercialized most of touch panels (TSP) based on electrically conducting transparent ito thin film, but applied to During wide area touch panel plate, with following problem：Because by ito transparent electrode, of a relatively high sheet resistance is (minimum in itself For 150 Ω/ (Ω/square), ELECRYSTA products manufactured as Nitto Denko Corporation) caused by RC prolong Late so that touch recognition speed is reduced, in order to overcome this problem, it is necessary to introduce additional compensation chips.
Present inventors studied the technology that transparent ito thin film is substituted with metal fine pattern.As a result, the inventors discovered that, In the case where using the metallic film with high electrical conductivity as the electrode for touch panel, when application is with specific During the fine electrode pattern of shape, in terms of visuality caused by high reflectance, due to higher reflectivity, the mist to exterior light Angle value etc., can produce the problem of pattern is observed and dazzle the eyes well by human eye.In addition, in the fabrication process, the present inventor It was found that, desired value is expensive in many cases or process is complicated.
In addition, being the color of reflection in the case where using metal fine as transparency electrode, the problem of maximum.Due to gold The unique luster of category, can produce the visual sex chromosome mosaicism such as dazzle the eyes as caused by external light source, accordingly, it would be desirable on the metal surface Formation can reduce the extra play of reflection.
In the prior art as darken structure such as AlOxNy/Al structure in the case of, although with excellent Characteristic, but be due to relatively low productivity ratio and produce shortcoming, the present inventor introduces Cu bases and darkens structure.
Using electrode layer and in the case of the darkening layer based on Cu (have the ratio resistance value lower than Al), for meeting The thickness of the film of sheet resistance needed for manufacture touch-screen can be smaller, especially, in sputter procedure, due to Cu materials tool There is the excellent sputtering yield value of about three times higher than Al, therefore, in theory, sedimentation rate can improve about three times.
Cu electrodes can also be using Cu oxides come blackening, and Cu electrode layers can pass through physical deposition method and chemistry Deposition process is formed, and CuO can also be by the method for direct sputtering method, reactive sputtering method, vapor deposition method etc. To be formed.However, when use Cu oxides as darkening layer material when, Cu is observed in the case where keeping high temperature and high humidity The discoloration of structure is darkened, therefore, is deteriorated as the darkening function of the metal of original intention, finally, the visuality of touch-screen can be caused to ask Topic.In addition, in pyroprocess produced in the heat treatment of post processing such as film and wire electrode additional process, can cause steady Qualitative question.
Therefore, the application provides a kind of conducting structures, and the conducting structures can be with using routine ITO class electrically conducting transparents The touch panel of film layer is different, and can apply to screening performance with improved metal fine pattern electrode and The touch panel of reflection and diffraction property to exterior light.
In addition, the application provides a kind of conducting structures and its manufacture method, the manufacture method, which can overcome, uses O2 Relatively low productivity ratio, the discoloration problem under high temperature and humidity of popular response sputtering method etc..
Included according to the manufacture method of the conducting structures of the application exemplary：Formed on substrate Metal level；And darkening layer is formed on the metal level, wherein, the formation of the darkening layer is by using CO2Reaction splash Penetrate to carry out.
In addition, being included according to the manufacture method of the conducting structures of the another exemplary embodiment of the application：In substrate Upper formation darkening layer；And metal level is formed in the darkening layer, wherein, the formation of the darkening layer is by using CO2's Reactive sputtering is carried out.In this case, the manufacture method, which is additionally may included on metal level, forms darkening layer.
In this application, darkening layer refers to reduce the amount that incides the light of metal level in itself by absorbing and from metal The layer of the amount of the light of layer reflection, darkening layer can be represented with term absorbed layer, light-absorption layer, blackening layer, dark layer etc..
In this application, darkening layer can be included in metal oxide, metal nitride and metal oxynitride At least one, but not limited to this.In this case, the metal oxide, metal nitride and metal oxynitride can With comprising selected from least one of Fe, Co, Ti, V, Al, Au, Cu and Ag metal, but not limited to this.According to showing for the application Example property embodiment, in addition to above-mentioned metal oxide, metal nitride and metal oxynitride, darkening layer can be wrapped in addition Containing such as SiO, SiO2、MgF2With SiNx (x is more than 1 integer) dielectric material.
Especially, darkening layer can include (CuOx)aCb, in this case, x can be 0<In the range of x≤1, a+b =1, b can be 0<In the range of b≤0.1.
In the manufacture method according to the conducting structures of the application, darkening layer utilizes and uses CO2Reactive sputtering carry out shape Into, as a result, utilized with darkening layer and use O2Popular response sputter and compared come situation about being formed, can be by suppressing high-temperature denatured To provide a kind of darkening layer of stabilization, and a kind of improved technique can also be provided in terms of sedimentation rate.
According to the manufacture method of the conducting structures of the application, when forming darkening layer, reactive sputtering can be by simultaneously Inject CO2Carried out with Ar.In this case, CO2Partial pressure can be more than 66%, more than 80% and more than 90%, still Not limited to this.In addition, in darkening layer, can contain a small amount of C, more particularly, C content can be less than 0.3 in darkening layer Weight %, but not limited to this.
In this application, substrate can use transparency carrier, and be not particularly limited, for example, substrate can be used Glass, plastic base, plastic foil etc..
In this application, the material of metal level can be with superior electrical conductivity and be easy to etched metal material.However, Generally, the material with superior electrical conductivity has reflectivity high.However, in this application, by using with higher The material of reflectivity, metal level is formed using darkening layer.In this application, it is more than 70 to 80% even in using reflectivity Material in the case of, darkening layer can also be added reduce reflectivity, improve metal level shielding, and keep or improve Contrast-response characteristic.
The instantiation of the material of metal level can be containing in copper, aluminium, silver, neodymium, molybdenum, nickel and their alloy at least The single or multiple lift of a kind of single or multiple lift, more preferably copper or aluminium, but not limited to this.
In addition, metal level and darkening layer can include different metallic atoms, identical metallic atom can also be included.
In this application, the formation of metal level can use method as known in the art to carry out.For example, metal level can be with Formed by the method for direct sputtering method, reactive sputtering method, vapor deposition method etc., but not limited to this.
In this application, the process for individually or simultaneously making metal level and darkening pattern layers can be comprised additionally in.
In other words, in the manufacture method of the conducting structures of the exemplary according to the application, on substrate Form metal level, by make it is metal layer patterning form metal pattern, then can be formed on metal pattern darkening layer or Darken pattern.In addition, in the manufacture method of the conducting structures of the another exemplary embodiment according to the application, in substrate Upper formation metal level, forms darkening layer on the metal layer, then by making metal level simultaneously and darkening pattern layers, can be formed Metal pattern and darkening pattern.
In addition, in the manufacture method of the conducting structures of the exemplary according to the application, the shape on substrate Into darkening layer, darkening pattern is formed by making darkening pattern layers, metal level or gold then can be formed on pattern is darkened Metal patterns.In addition, in the manufacture method of the conducting structures of the another exemplary embodiment according to the application, on substrate Darkening layer is formed, metal level is formed in darkening layer, then by making metal level simultaneously and darkening pattern layers, gold can be formed Metal patterns and darkening pattern.
In this application, the line width of metal pattern can be more than 0 μm and for less than 10 μm, in particular more than 0.1 μm and For less than 10 μm, more particularly more than 0.2 μm and for less than 8 μm, also more particularly for more than 0.5 μm and be less than 5 μm.
In this application, the aperture opening ratio of metal pattern, i.e. not by the area ratio of pattern covers can for more than 70%, More than 85% and more than 95%.In addition, the aperture opening ratio of metal pattern can be 90 to 99.9%, but not limited to this.
In this application, metal pattern can be regular pattern and irregular pattern.
As regular pattern, the pattern form in this area, such as lattice can be used.To irregular pattern without spy Do not limit, but can be the boundary line form of the figure comprising Thiessen polygon figure (voronoi diagram).In this Shen Please in, together using irregular pattern and darken pattern in the case of, the diffraction pattern of the reflected light as caused by directional lighting It can be removed by irregular pattern, and minimize by darkening layer the influence of the scattering of light, therefore, it can to make can The problem of depending on property, minimizes.
In this application, metal pattern includes the marginal texture of continuously coupled closed figure (closed figures), And metal pattern does not have the top in the closed figure of same shape, closed figure in any unit area (1cm × 1cm) Point (apexes) number can from different with the number of vertex in the quadrangle of the quantity identical quantity of closed figure.
Number of vertex in closed figure is with having and the number of vertex in the quadrangle of the quantity identical quantity of closed figure It is different.More particularly, the number of vertex in closed figure can be than with the quadrangle with the quantity identical quantity of closed figure In number of vertex it is many or many 1.9 to 2.1 times, but not limited to this.
In this application, closed figure is continuously connected to one another, for example, when closed figure is polygon, adjacent envelope At least one side can be shared by closing figure.
In this application, metal pattern includes the marginal texture of continuously coupled closed figure, and metal pattern is in office Number of vertex in the interior closed figure for not having same shape of unit area (1cm × 1cm) of anticipating, closed figure can be with passing through company The number of vertex connect in polygon formed by the beeline between the center of gravity of closed figure is different.
It is polygon formed by beeline between number of vertex in closed figure and the center of gravity by connecting closed figure Number of vertex in shape is different.More particularly, the number of vertex in closed figure can be than between the center of gravity by connecting closed figure Beeline formed by number of vertex in polygon it is many or many 1.9 to 2.1 times, but not limited to this.
In this application, metal pattern includes the marginal texture of continuously coupled closed figure, and metal pattern is in office The interior closed figure for not having same shape of unit area (1cm × 1cm) of anticipating, in closed figure, the value in formula 3 below can To be more than 50.
[formula 3]
(average value on the distance between the standard deviation/summit on the distance between summit) × 100
In this application, obtain on by a surface by the linear light radiation sent from light source to metal pattern During the image of the diffraction pattern of transmission, in the images, the value of formula 4 below can be less than 21.
[formula 4]
(standard deviation of the intensity of the diffraction pattern of the transmission changed with angular regions/change with angular regions The mean intensity of the diffraction pattern of transmission) × 100
In formula 4, angular regions refer to the picture centre from the diffraction pattern of transmission with the area of every 10 ° 0 ° to 360 ° of segmentations Domain.
When the image of the diffraction pattern transmitted, in the images, the value in formula 4 can be less than 21, be less than 15 And be less than 10.
In this application, metal pattern includes the marginal texture of closed figure continuously coupled each other, and closed figure Marginal texture can in a variety of manners, such as straight line, curve, zigzag (zigzag) and combinations thereof changes.
In this application, metal pattern can not have identical closed figure in unit area.
In this application, conductive pattern includes the marginal texture of continuously coupled closed figure, when in composition closed figure Edge line and arbitrary line between the angle that is formed in 0 ° to 180 ° with 10 ° of unit when, relative to each angle Line number in the range of degree, the value of formula 5 below can be less than 21, be less than 15 and be less than 10.
[formula 5]
(average value of the line number in standard deviation/angular range of the line number in angular range) × 100
In this application, in metal pattern, value of the formula 3 into formula 5 can be calculated in the unit area of conductive pattern. Unit area can be the region formed by metal pattern, for example, be 3.5cm × 3.5cm, but not limited to this.
Summit will be defined as referring to the line point intersected with each other at the edge for the closed figure for constituting metal pattern.
Thus, pattern is formed to realize the fine metal patterns needed for touch-screen.In touch-screen, when being not carried out essence During thin metal pattern, it is impossible to obtain the physical property needed for touch-screen, such as resistance.
In this application, metal pattern can be the form of the marginal texture of closed figure, and it passes through regularly arranged Arbitrfary point is set in unit cell, and these points are connected with the point apart from other points recently and formed.
In this case, scrambling is introduced in the method that arbitrfary point is set in regularly arranged unit cell In the case of, the metal pattern of the exemplary according to the application can be formed.For example, when degree of irregularity is 0, working as list When bit location is square, metal pattern has square net structure, and when unit cell is regular hexagon, metal pattern has Alveolate texture.
By the metal pattern of the irregular pattern form of the exemplary according to the application, it can suppress to constitute The covering phenomenon of the line of pattern, can obtain uniform light transmittance, and can protect the line density of unit area from display Hold in same level, and may insure uniform electric conductivity.
In this application, in metal pattern, the number of vertex of the closed figure in unit area (3.5cm × 3.5cm) can Think 6, more than 000,7, more than 000,15, more than 000 and for 245, less than 000, but can be according to those skilled in the art The light transmittance and electric conductivity needed is adjusted.
In this application, the line width of metal pattern is less than 10 μm, and in metal pattern, 3.5cm × 3.5cm's The number of vertex of closed figure in region can be 6,000 to 245,000.In addition, the line width of metal pattern is less than 7 μm, and And in metal pattern, the number of vertex of the closed figure in 3.5cm × 3.5cm region can be 7,000 to 62,000.This Outside, the line width of metal pattern is less than 5 μm, and in metal pattern, the closed figure in 3.5cm × 3.5cm region Number of vertex can be 15,000 to 62,000.
At least one figure of pattern is constituted in unit area can have the shape different from other figures.
In this application, positive taper down gate angle can be had by darkening the side of pattern and metal pattern, but be provided in metal pattern Substrate or the darkening pattern on opposite of metal pattern can have back draught angle.
In addition, the another exemplary embodiment of the application provides a kind of manufacturer's legal system by the conducting structures The conducting structures made.
In addition, the another exemplary of the application provides a kind of conducting structures, including：Substrate；It is arranged on institute State the metal level on substrate；And it is arranged on the darkening layer at least one surface of the metal level.
Especially, the darkening layer of the conducting structures includes (CuOx)aCb, x is 0<In the range of x≤1, a+b=1, b 0<In the range of b≤0.1.
Following Fig. 1 is shown in into Fig. 3 according to the conducting structures of the exemplary of the application example. Fig. 1 to Fig. 3 exemplified with substrate, metal level and darkening layer lamination order, when the essence for being applied to touch panel etc. During thin transparency electrode, metal level and darkening layer can have the shape patterned, rather than complete surface layer.
Reference picture 1, shows that darkening layer 200 is arranged between substrate 100 and metal level 300.When user sees from substrate-side When examining touch panel, it can substantially reduce and be reflected as caused by metal level.
Reference picture 2, shows that darkening layer 200 is arranged on metal level 300.When user touches from the opposite of substrate-side During panel plate, it can substantially reduce and be reflected as caused by metal level.
Reference picture 3, shows that darkening layer 200 and 220 is arranged between substrate 100 and metal level 300 and in metal level On 300.When user's touch panel from substrate-side and its opposite, it can substantially reduce and be reflected as caused by metal level.
In the structure of the conducting structures of the exemplary according to the application, darkening layer can be arranged on metal On at least one surface of layer.
Can be substrate, darkening layer, metal level according to the structure of the conducting structures of the exemplary of the application The structure being laminated with darkening layer order.In addition, conducting structures can be additionally included in the metal level in outmost darkening layer And darkening layer.
In other words, according to the structure of the conducting structures of the exemplary of the application can be substrate/darkening layer/ The structure of metal level, the structure of substrate/metal level/darkening layer, the substrate/structure of darkening layer/metal level/darkening layer, substrate/gold Belong to the structure of layer/darkening layer/metal level, the structure of substrate/darkening layer/metal level/darkening layer/metal level/darkening layer, substrate/ Structure of darkening layer/metal level/darkening layer/metal level/darkening layer/metal level/darkening layer etc..
In the exemplary of the application, the sheet resistance of conducting structures can be 1 Ω/more than and be 300 Ω/below, in particular 1 Ω/more than and for 100 Ω/below, more particularly 1 Ω/more than and for 50 Ω/ Below, more particularly still for 1 Ω/more than and be 20 Ω/below.
If the sheet resistance of conducting structures is 1 Ω/more than and is 300 Ω/below, with the existing skill of replacement The effect of ito transparent electrode in art.When the sheet resistance of conducting structures is 1 Ω/more than and is 100 Ω/below, or For 1 Ω/more than and be 50 Ω/below, especially, 1 Ω/more than and during for 20 Ω/below, with using prior art In the situation of ito transparent electrode compare, sheet resistance is significantly lower.Therefore, shortened with RC retardation ratio when a signal is applied Advantage, as a result, touch recognition speed can be significantly improved, and be readily applied to the touch with more than 10 inches of large area Screen.
In conducting structures, the sheet resistance of metal level or darkening layer before patterning can be more than 0 Ω/ and be 2 Ω/below, especially, more than 0 Ω/ and for 0.7 Ω/below.When sheet resistance be 2 Ω/below, especially, During 0.7 Ω/below, because the sheet resistance of the metal level before patterning or darkening layer is reduced, therefore, easily carry out fine The sheet resistance reduction of conducting structures after patterning schemes and manufacturing process, and patterning, therefore, with raising electrode Reaction rate effect.Sheet resistance can be adjusted according to metal level or the thickness of darkening layer.
In conducting structures in accordance with an exemplary embodiment of the invention, the average delustring system in visible region Number k can be 0.2 to 1.5, in particular 0.4 to 1.0.When average extinction coefficient k is more than 0.2, with what can be darkened Effect.Average extinction coefficient k is referred to as absorption coefficient, and is used as the light that can define conducting structures absorption specific wavelength The measurement of intensity, is the factor for the light transmittance for determining conducting structures.For example, in the case of transparent dielectric material, k< 0.2, the k values are very small.However, with the metal ingredient increase in material, the increase of k values.If metal ingredient further increases, Then metal ingredient is changed into hardly occurring transmission and the only main metal for occurring surface reflection, and Bees Wax k is more than 1.5, it is therefore, not preferred in terms of the formation of darkening layer.
In an exemplary embodiment of the present invention, in conducting structures, the mean refractive index in visible region Can be 2 to 3.
In this application, it is seen that light region refers to the region that wavelength is 360nm to 820nm.
In an exemplary embodiment of the present invention, the thickness of darkening layer can be 20nm to 60nm, in particular 25nm To 50nm, more particularly 30nm to 50nm.The preferred thickness for darkening pattern can be according to used material and manufacturing process And change, it is contemplated that etching characteristic, when thickness is less than 20nm, the process can be not easy regulation, when thickness is more than , can be unfavorable in terms of productivity ratio during 60nm.Especially, when thickness is more than 25nm and is below 50nm, more particularly 30nm During to 50nm, the process easily regulation and productivity ratio improvement therefore, in the fabrication process can be more favourable.In such case Under, reflection further reduction, and darkening layer is more preferable to be formed, therefore, with more favourable effect.
In an exemplary embodiment of the present invention, the total reflectivity of darkening layer can be less than 20%, in particular Less than 15%, more particularly less than 10%, it is also more particularly less than less than 5% and 3%.Because total reflectivity is smaller, effect Fruit is better.
Measured on the direction of the apparent surface on the surface that total reflectivity can be contacted in darkening layer with metal level.In the direction The total reflectivity of upper measurement can be less than 20%, in particular less than 15%, more particularly less than 10%, also more particularly For less than less than 5% and 3%.Reflectivity is smaller, and effect is better.
In addition, darkening layer is arranged between metal level and substrate, and total reflectivity can be measured in substrate-side.When in base Plate side measure total reflectivity when, total reflectivity can be less than 20%, in particular less than 15%, more particularly 10% with Under, it is also more particularly less than less than 5% and 3%.Because total reflectivity is smaller, effect is better.
In this application, total reflectivity refers to after all black processing surface relative with surface to be measured is finished, for Using 90 ° of wavelength incided on surface to be measured as 300 to 800nm, in particular 380 to 780nm, more particularly 550nm's The reflectivity of light.
In an exemplary embodiment of the present invention, in conducting structures, the total reflectivity of darkening layer can be 20% Hereinafter, in particular less than 15%, more particularly less than 10%, it is also more particularly less than 6%.Because total reflectivity is got over Small, effect is better.
In this application, total reflectivity can be when incident light is defined as 100%, based on by the incident target figure of light The wavelength value that pattern layer or conducting structures are reflected is 300 to 680nm, in particular 450 to 650nm, more particularly 550nm Reflected light and the value that measures.
In conducting structures in accordance with an exemplary embodiment of the invention, darkening pattern can include and metal pattern The first surface of contact and the second surface towards the first surface.When the second surface side measurement conductive structure in darkening pattern During the total reflectivity of body, the total reflectivity Rt of conducting structures can be calculated by following formula 1.
[formula 1]
The reflectivity of reflectivity+make rate × darkening pattern of total reflectivity Rt=substrates
In addition, when the situation that the structure of conducting structures is laminated for two kinds of conducting structures, conducting structures Total reflectivity Rt can be calculated by following formula 2.
[formula 2]
Reflectivity × 2 of reflectivity+make rate × darkening pattern of total reflectivity Rt=substrates
In formula 1 and formula 2, the reflectivity of substrate can be the reflectivity for touching strengthened glass, when surface is film, substrate Reflectivity can be film reflectivity.
In addition, make rate can be by the plane based on conducting structures, the face occupied by region covered by metal pattern Product ratio, in other words, (1- opening ratios) are represented.
Therefore, have a case that to darken pattern and depend on the anti-of darkening layer without the difference between darkening layer Penetrate rate.In this regard, with having the total reflectivity R of mutually isostructural conducting structures in addition to without pattern is darkened0 Compare, can reduce by 10% to 20% according to the total reflectivity Rt of the conducting structures of the exemplary of the application, 20% to 30%, 30% to 40%, 40% to 50% and 50% to 70%.In other words, in formula 1 and formula 2, when by total reflection The scope of rate is changed into 1% to 30%, while when the scope of make rate is changed into 1% to 10%, can show to be 70% to the maximum Reduction total reflectivity effect, and minimum 10% reduction total reflectivity effect can be shown.
In the conducting structures according to the exemplary of the application, darkening pattern includes contacting with metal pattern First surface and the second surface towards the first surface.When the second surface side measurement conducting structures in darkening pattern During total reflectivity, the total reflectivity Rt of conducting structures and the total reflectivity R of substrate0Between difference can for less than 40%, Less than 30%, less than 20% and less than 10%.
In the exemplary of the application, based on International Commission on Illumination (Commission Internationale de l'Eclairage, CIE) L*a*b* chromaticity coordinates, the contrast value L* of conducting structures can be Less than 50, more particularly less than 20.Because contrast value is reduced, total reflectivity reduction, so that favorably.
In addition, in the conducting structures according to the exemplary of the application, darkening pattern can directly be set On substrate or metal pattern, and it is not inserted into adhesion layer or adhesive layer.Adhesion layer or adhesive layer can influence durability or optical Energy.In addition, according to the manufacture method of the conducting structures of the exemplary of the application with using adhesion layer or adhesive layer Situation it is entirely different.In addition, compared with using the situation of adhesion layer or adhesive layer, in the exemplary of the application In, substrate or metal pattern and the interfacial characteristics darkened between pattern are excellent.
In the exemplary of the application, darkening pattern can be formed by individual layer or two or more layer.
In the exemplary of the application, achromaticity (achromatic color) can be had by darkening pattern. In this case, achromaticity refers to when the light that incide body surface is not absorbed optionally, but is equably reflected And the color shown when the wavelength of each composition is absorbed.
The another exemplary embodiment offer of the present invention is a kind of to include the electronic installation of the conductive structure.
The electronic installation can include touch panel, display device, solar cell etc., but not limited to this.
More particularly, for example, in capacitive touch screen panel, conduction in accordance with an exemplary embodiment of the invention is tied Structure body may be used as touch-sensitive electrode base board.
In addition to the conducting structures including substrate, metal level and darkening layer, touch panel can also include additional Structure.In this case, two structures can be set in same direction, or can be set in mutually opposite directions Put.The two or more structure in the touch panel of the present invention, which can be included in, need not have identical structure, and arbitrarily One, it is preferable that only the structure nearest from user can include substrate, metal level and darkening layer, and additional structure body can Not include the darkening layer of patterning.In addition, the laminar structure in two or more structure can be with different from each other.When including two During above structure, insulating barrier can be set between them.In this case, insulating barrier can have adhesion layer in addition Function.
It can be included according to the touch panel of the exemplary of the application：Infrabasal plate；Upper substrate；And electrode Layer, the electrode layer is arranged in the surface of the surface of the infrabasal plate contacted with upper substrate and the upper substrate contacted with infrabasal plate On any one surface or on two surfaces.Electrode layer can distinguish the function of perform detection X-axis position and detection Y-axis position.
In this case, be arranged on infrabasal plate and the surface of infrabasal plate that is contacted with upper substrate on electrode layer；With And be arranged on upper substrate and the surface of upper substrate that is contacted with infrabasal plate on electrode layer in one or two can be root According to the conducting structures of the above-mentioned example embodiment of the application.Only one is the conduction according to the application in electrode layer In the case of structure, remaining electrode layer can have metal pattern as known in the art.
With the feelings for the electrode layer for forming two layers on a surface for be arranged on electrode layer both upper substrate and infrabasal plate Under condition, insulating barrier or pad can be set between infrabasal plate and upper substrate, so as to the distance between equably holding electrode layer, And electrode layer is not in contact with each other.Insulating barrier can include adhesive or UV or thermosetting resin.Touch panel may be used also To include the grounded part for the metal pattern being connected in above-mentioned conducting structures.For example, grounded part can substrate tool The edge for having the surface of metal pattern is formed.Furthermore, it is possible at least one surface of the layered product including conducting structures At least one of upper setting antireflection film, light polarizing film and anti-fingerprint film.According to design specification, in addition to above-mentioned functions film, Different types of functional membrane can also be included.As described above, touch panel can apply to such as OLED display panel (PDP), in liquid crystal display (LCD), cathode-ray tube (CRT) and PDP display device.
In the touch panel according to the exemplary of the application, metal pattern and darkening pattern can be distinguished It is arranged on two surfaces of substrate.
The electricity on conducting structures can be additionally included according to the touch panel of the exemplary of the application Pole part or liner part (pad portion).In this case, effective screen portions, electrode part and liner part can To be made up of identical conductor.
In the touch panel according to the exemplary of the application, the side that can be observed in user sets dark Change pattern.
In addition, in a display device, can be used in and filtered according to the conducting structures of the exemplary of the application In device substrate, thin film transistor base plate etc..
Passed in addition, solar cell can include anode electrode, cathode electrode, photosensitive layer, hole transmission layer and/or electronics Defeated layer, and may be used as anode electrode and/or cathode electrode according to the conducting structures of the exemplary of the application.
The conducting structures can substitute the conventional ITO in display device or solar cell, and can be used for soft Property application.In addition, the conducting structures can be used as transparent electricity of future generation together with CNT, conducting polymer, graphene etc. Pole.
Hereinafter, the present invention will be more fully described with reference to embodiment, comparative example and test example.However, following implementation Example, comparative example and test example are only to illustrate the present invention, the scope of the present invention not limited to this.
<Embodiment>
<Embodiment 1>
Thickness is formed on polyethylene terephthalate (PET) substrate by using the d.c. sputtering method of the single targets of Cu The Cu layers for 60nm are spent as conductive layer, and pass through CO2Reactive sputtering method, in the single targets of Cu formed thickness be 35nm and C's containing a small amount of (being less than 0.3 weight %) includes CuOx (0 ＜ x ＜ 1) darkening layer, so as to manufacture the conductive knot of embodiment 1 Structure body.In this case, in CO2:The partial pressure of Ar gases is tested for 0% to 100% time, and point more than 66% Pressure can form target substance.Discharge voltage for deposition is 150W, using 3 inches of sputter equipment, works as discharge voltage When being changed, discharge voltage is about 3.29W/cm2.Pressure process in deposition process is remained into about 3mTorr.
<Comparative example 1>
Thickness is formed on polyethylene terephthalate (PET) substrate by using the d.c. sputtering method of the single targets of Cu The Cu layers for 60nm are spent as conductive layer, and pass through O2Reactive sputtering method, it is 35nm's that thickness is formed in the single targets of Cu CuOx (0 ＜ x ＜ 1) darkening layer is included, so as to manufacture the conducting structures of comparative example 1.In this case, in O2:Ar gas The partial pressure of body is tested for 0% to 100% time, and target substance can be formed under the partial pressure more than 20%.For sinking Long-pending discharge voltage is 150W, and using 3 inches of sputter equipment, when discharge voltage is changed, discharge voltage is about 3.29W/cm2.Pressure process in deposition process is remained into about 3mTorr.
<Test example>
1) change of reflectivity before and after being heat-treated
The reflectivity of the conducting structures manufactured in embodiment 1 and comparative example 1 before and after the heat treatment is with CO2 The intrinsic standoff ratio (%) or O of reacting gas2The change of the intrinsic standoff ratio (%) of reacting gas is shown in following Fig. 4.Following Fig. 4's The intrinsic standoff ratio (%) on top refers to CO2/O2With Ar intrinsic standoff ratio.In this case, heat treatment condition is 150 DEG C and 30 minutes.
According to following Fig. 4's results, it can be seen that as in this application, using CO2In the case of reacting gas, Reflectivity has almost no change before and after heat treatment.
2) the composition distribution of darkening layer
Fig. 5 shows the group of the darkening layer in the conducting structures manufactured in embodiment 1 before and after the heat treatment Into distribution.Fig. 6 shows the composition of the darkening layer in the conducting structures manufactured before and after the heat treatment in comparative example 1 Distribution.In this case, heat treatment condition is 150 DEG C and 30 minutes.
3) sedimentation rate
When manufacturing the conducting structures of embodiment 1 and comparative example 1, it is heavy that evaluation changes with the type of reacting gas Product speed, and be shown in following table 1.
[table 1]
As a result, the electric conductivity of conductive pattern is not influenceed according to the conducting structures of the exemplary of the application, and And can prevent from reflecting and improving as caused by conductive pattern the shielding of conductive pattern by improving absorbance.In addition, In the conducting structures according to the exemplary of the application, darkening layer utilizes and uses CO2Reactive sputtering formed, As a result, utilized with darkening layer and use O2Popular response sputter and compared come situation about being formed, can by suppress it is high-temperature denatured come A kind of darkening layer of stabilization is provided, and a kind of improved technique can also be provided in terms of sedimentation rate.
In addition, using the conducting structures of the exemplary according to the application, can develop can with what is improved Depending on the electronic installation of property, such as touch panel, display device and solar cell.

Claims (17)

1. a kind of manufacture method of conducting structures, including：
Metal level is formed on substrate, and
Darkening layer is formed on the metal level,
Wherein, the formation of the darkening layer is by using CO2Reactive sputtering carry out.
2. a kind of manufacture method of conducting structures, including：
Darkening layer is formed on substrate, and
Metal level is formed in the darkening layer,
Wherein, the formation of the darkening layer is by using CO2Reactive sputtering carry out.
3. manufacture method according to claim 1 or 2, wherein, when forming the darkening layer, the reactive sputtering passes through CO is injected simultaneously2Carried out with Ar.
4. manufacture method according to claim 3, wherein, CO2Partial pressure be more than 66%.
5. manufacture method according to claim 1 or 2, wherein, the darkening layer, which is included, is selected from metal oxide, metal nitrogen At least one of compound and metal oxynitride.
6. manufacture method according to claim 5, wherein, the metal oxide, the metal nitride or the gold Belong to nitrogen oxides to include selected from least one of Fe, Co, Ti, V, Al, Au, Cu, Ag and their alloy metal.
7. manufacture method according to claim 5, wherein, the metal level and the darkening layer include identical metal raw Son.
8. manufacture method according to claim 1 or 2, wherein, the darkening layer includes (CuOx)aCb, x is 0<X≤1 In the range of, a+b=1, b is 0<In the range of b≤0.1.
9. manufacture method according to claim 1 or 2, in addition to：
Individually or simultaneously make the metal level and the darkening pattern layers.
10. a kind of conducting structures of the manufacture method manufacture of conducting structures by described in claim 1 or 2.
11. a kind of conducting structures, including：
Substrate；
Metal level on the substrate is set；And
The darkening layer at least one surface of the metal level is arranged on,
Wherein, the darkening layer includes (CuOx)aCb, x is 0<In the range of x≤1, a+b=1, b is 0<In the range of b≤0.1.
12. conducting structures according to claim 11, wherein, the surface contacted in the darkening layer with the metal level Apparent surface direction on the total reflectivity that measures be less than 20%.
13. conducting structures according to claim 11, wherein, the darkening layer is arranged on the metal level and the base Between plate, the total reflectivity measured in the substrate-side is less than 20%.
14. conducting structures according to claim 11, wherein, the sheet resistances of the conducting structures for 1 Ω/ with It is upper and be 300 Ω/below.
15. conducting structures according to claim 11, wherein, the conducting structures being averaged in visible region Extinction coefficient k is 0.4 to 1.0.
16. conducting structures according to claim 11, wherein, the conducting structures are based on CIE L*a*b* chromaticity coordinates Contrast value L* be less than 50.
17. a kind of electronic installation of the conducting structures described in any one including in claim 11 to 16.
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Application publication date: 20170922