KR20150134835A

KR20150134835A - Conductive structure body and method for manufacturing the same

Info

Publication number: KR20150134835A
Application number: KR1020140062136A
Authority: KR
Inventors: 박찬형; 임진형; 김기환; 이일하
Original assignee: 주식회사 엘지화학
Priority date: 2014-05-23
Filing date: 2014-05-23
Publication date: 2015-12-02

Abstract

The present invention relates to a conductive structure body, and a manufacturing method thereof. According to an embodiment of the present invention, the manufacturing method of the conductive structure body comprises: a step of forming a metal layer on a substrate; and a step of forming a darkened layer on the metal layer. The darkened layer is formed by conducting an evaporation deposition method.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a conductive structure,

The present application relates to a conductive structure and a method of manufacturing the same.

Generally, the touch screen panel can be classified as follows according to the signal detection method. That is, a resistive type in which a position depressed by a pressure in a state where a direct current voltage is applied is sensed through a change in a current or a voltage value, and a resistive type in which a capacitance coupling is used in a state in which an alternating voltage is applied There is a capacitive type and an electromagnetic type in which a selected position is sensed as a change in voltage while a magnetic field is applied.

Recently, as the need for a large area touch screen panel has increased, it has been necessary to develop a technology capable of realizing a large touch screen panel having excellent visibility while reducing electrode resistance.

Korean Patent Publication No. 10-2011-0054369

There is a need in the art to develop a technique for improving the performance of the various types of touch screen panels.

In one embodiment of the present application,

Forming a metal layer on the substrate, and

And forming a darkening layer on the metal layer,

Wherein the step of forming the darkening layer is performed by a vapor deposition method.

Further, another embodiment of the present application,

Forming a darkening layer on the substrate, and

And forming a metal layer on the darkening layer,

Further, another embodiment of the present application provides a conductive structure produced by the method for manufacturing the conductive structure.

Still another embodiment of the present application provides an electronic device comprising the conductive structure.

The conductive structure according to one embodiment of the present application can prevent the reflection by the conductive pattern without affecting the conductivity of the conductive pattern and improve the hiding property of the conductive pattern by improving the absorbance. In addition, the conductive structure according to one embodiment of the present application can increase the productivity by using the evaporation deposition method at the time of forming the darkened layer, and can secure stability without changing color even under high temperature and high humidity.

Further, an electronic device such as a touch screen panel, a display device, a solar cell, or the like with improved visibility can be developed using the conductive structure according to one embodiment of the present invention.

Figs. 1 to 3 are schematic views showing a laminated structure of a conductive structure including a matted layer in one embodiment of the present application. Fig.
4 is a diagram showing a reflectance spectrum of a conductive structure including Cu-based and Al-based matting layers as one embodiment of the present application.
FIG. 5 is a diagram showing an optical constant (n, k) of a Cu-based dark coloring layer as an embodiment of the present application.
FIG. 6 is a graph showing reflectance spectra of the Cu-based dark coloring layer before and after the high temperature and high humidity test as one embodiment of the present application.
DESCRIPTION OF THE REFERENCE NUMERALS
100: substrate
200: dark colored layer
220: dark colored layer
300: metal layer

The present application will be described in more detail below.

In this specification, the term " display device " refers to a television, a computer monitor, or the like, and includes a display element for forming an image and a case for supporting the display element.

Examples of the display device include a plasma display panel (PDP), a liquid crystal display (LCD), an electrophoretic display, a cathode ray tube (CRT), and an OLED display . The display element may be provided with an RGB pixel pattern for image implementation and an additional optical filter.

Meanwhile, as the spread of smart phones, tablet PCs, IPTVs, and the like is accelerated in connection with display devices, there is a growing need for a touch function in which a human hand becomes a direct input device without a separate input device such as a keyboard or a remote control. In addition, there is a demand for a multi-touch function capable of not only a specific point recognition but also writing.

Most commercial touch screen panels (TSPs) are based on transparent conductive ITO thin films, but when applied to a large area touch screen panel, the relatively high sheet resistance of the ITO transparent electrode itself (at least 150 Ω / □, Nitto the speed of the touch recognition is slowed due to the RC delay caused by the ELECRYSTA manufactured by Denko Co., Ltd., and an additional compensation chip is required to overcome this problem.

The present inventors have studied a technique for replacing the transparent ITO thin film with a metal fine pattern. The present inventors have found that when a metal thin film having a high electrical conductivity is used as an electrode of a touch screen panel and a microelectrode pattern of a specific shape is to be realized, It has been found out that there is a problem that it is perceived by the eyes and that glare may occur due to high reflectance and haze value against external light. In addition, it has been found out that there are many cases where an expensive target value is involved in the manufacturing process or that the process is complicated in many cases.

In addition, when a metal fine line is used as a transparent electrode, the most problematic point is the reflection color. Because of the inherent luster of the metal, visibility problems such as sparkling due to external light sources can occur, so that additional layers can be formed on the metal surface to reduce reflectivity.

In general, conventional metal fine wire products are manufactured by sputtering. In particular, a dark coloring layer for reducing the reflectance of metal fine wires is also manufactured by sputtering, and the deposition rate is maintained at 1 nm / s. In addition, when manufactured by a roll-to-roll process, the productivity can be said to be as low as several m / min.

Accordingly, the present application can be applied to a touch screen panel which can be differentiated from a touch screen panel using a conventional ITO-based transparent conductive thin film layer and has improved hiding properties of a metal fine pattern electrode and reflection and diffraction characteristics against external light To provide a conductive structure.

In addition, the present application aims to provide a method of manufacturing a conductive structure which can overcome the low productivity of the conventional sputtering method.

A method of manufacturing a conductive structure according to an embodiment of the present application includes forming a metal layer on a substrate, and forming a matting layer on the metal layer, wherein the step of forming the matting layer comprises: .

In addition, a method of manufacturing a conductive structure according to another embodiment of the present application includes the steps of forming a darkening layer on a substrate, and forming a metal layer on the darkening layer, wherein the step of forming the darkening layer And is carried out by a vapor deposition method. At this time, a step of forming a darkening layer on the metal layer may be further included.

In the present specification, the darkening layer means a layer capable of absorbing light and reducing the amount of light incident on the metal layer itself and light reflected from the metal layer. The darkening layer has a light absorbing layer, a light absorbing layer, a blackening layer, Stratification, and the like.

In the present application, the darkening layer may include at least one selected from the group consisting of metal oxides, metal nitrides and metal oxynitrides, but is not limited thereto. The metal oxide, metal nitride or metal oxynitride may include at least one metal selected from the group consisting of Fe, Co, Ti, V, Al, Au, Cu and Ag. no. According to one embodiment of the present application, the darkening layer further includes a dielectric material such as SiO, SiO ₂ , MgF ₂ , and SiN x (x is an integer of 1 or more) in addition to the metal oxide, metal nitride, or metal oxynitride described above .

In the method of manufacturing a conductive structure according to the present application, the color of the matting layer can be maintained and the deposition rate can be increased by using the evaporation deposition method in forming the matting layer.

In the present application, the evaporation deposition method may use electron beam evaporation.

In the present application, the evaporation deposition method may be performed by directly evaporating one or more kinds selected from the group consisting of metal oxides, metal nitrides and metal oxynitrides, and depositing them.

In addition, in the present application, in order to solve the problem that the deposition rate is further increased and the deposited dark coloring layer can be easily discolored in the atmosphere, the evaporation deposition method evaporates the metal and activates O ₂ or N ₂ gas, , A metal nitride or a metal oxynitride. At this time, the activation of the O ₂ or N ₂ gas may use an ion gun or the like, but is not limited thereto.

More specifically, the activation of the O ₂ or N ₂ gas may use a filament type ion gun. The thermoelectrons from the filament are accelerated by the electromagnetic field to cyclotron movement, which ionizes the neutral O ₂ or N ₂ gas. The ionized electrons move in the direction of the substrate and meet with the metal atoms migrated by evaporation to form oxides or nitrides.

Conditions for activating the O ₂ or N ₂ gas include filament voltage, current, amount of gas flow, and the like. A voltage of 200V and a current of 5A can be used to activate O ₂ , where the flow of gas may be 20 sccm. A voltage of 100 V and a current of 5 A can be used to activate N ₂ , where the amount of gas may be 28 sccm. In order to activate the O ₂ or N ₂ gas, a voltage between 100 V and 300 V and a current between 5 and 10 A can be used. The deposition amount of the metal can be darkened in the range of 0.5 to 10 A / s. In the case of CuOx, the component Cu: O of the deposited oxide layer can be formed in a ratio of 1: 1.

In the present application, a transparent substrate can be used as the substrate but is not particularly limited, and for example, glass, a plastic substrate, a plastic film, or the like can be used.

In the present application, the material of the metal layer is preferably a metal material having excellent electrical conductivity and being easy to be etched. However, a material having an excellent electric conductivity generally has a high reflectivity. However, in the present application, a metal layer can be formed using a material having high reflectivity by using the above-mentioned darkening layer. In the present application, even when a material having a reflectivity of 70 to 80% or more is used, the addition of the darkening layer can lower the reflectivity, improve the concealability of the metal layer, and maintain or improve the contrast characteristic.

The material of the metal layer may be a single layer or a multilayer including at least one of copper, aluminum, silver, neodymium, molybdenum, nickel, and alloys thereof, more preferably copper or aluminum, But is not limited thereto.

The metal layer and the matting layer may contain different metal atoms and may contain the same metal atom.

In the present application, the step of forming the metal layer may be performed by a sputtering process, a vapor deposition method, or the like, but is not limited thereto.

In the present application, it is possible to further include a step of patterning the metal layer and the matting layer separately or simultaneously.

That is, in a method of manufacturing a conductive structure according to an embodiment of the present application, a metal layer is formed on a substrate, the metal layer is patterned to form a metal pattern, and a darkening layer or a darkening pattern is formed on the metal pattern have. According to another aspect of the present invention, there is provided a method of manufacturing a conductive structure, comprising: forming a metal layer on a substrate; forming a matting layer on the metal layer; patterning the metal layer and the matting layer simultaneously; .

According to an embodiment of the present invention, there is provided a method of manufacturing a conductive structure, which comprises forming a darkening layer on a substrate, patterning the darkening layer to form a darkening pattern, and forming a metal layer or a metal pattern on the darkening pattern can do. According to another aspect of the present invention, there is provided a method of manufacturing a conductive structure, including forming a dark color layer on a substrate, forming a metal layer on the dark color layer, patterning the metal layer and the dark color layer simultaneously, Can be formed.

In the present application, the line width of the metal pattern may be more than 0 탆 and not more than 10 탆, specifically 0.1 탆 or more and 10 탆 or less, more specifically 0.2 탆 or more and 8 탆 or less, Or more and 5 m or less.

In the present application, the opening ratio of the metal pattern, that is, the area ratio not covered by the pattern may be 70% or more, 85% or more, and 95% or more. In addition, the opening ratio of the metal pattern may be 90 to 99.9%, but is not limited thereto.

In the present application, the metal pattern may be a regular pattern or an irregular pattern.

As the regular pattern, a pattern form of the related art such as a mesh pattern can be used. The irregular pattern is not particularly limited, but may be a boundary line shape of the Voronoi diagram. In the present application, when an irregular pattern and a darkening pattern are used together, it is possible to remove the diffraction pattern of the reflected light due to the illumination having the directivity by the irregular pattern, and to minimize the influence of light scattering by the darkening pattern So that the problem of visibility can be minimized.

In the present application, the metal pattern includes a rim structure of successively connected closed shapes, wherein the metal pattern has no closed shape of the same type within an arbitrary unit area (1 cm x 1 cm), and the closed shapes The number of vertexes may be different from the number of vertices of the same number of squares as the closed shapes.

The number of vertexes of the closed diagrams is different from the number of vertices of the same number of squares as the closed diagrams. More specifically, the number of vertexes of the closed shapes may be greater than the number of vertices of the same number of squares as the closed shapes, and may be 1.9 to 2.1 times larger, but is not limited thereto.

In the present application, the closed graphics may be connected to each other in a continuous manner, for example, when the closed graphics are polygonal, the adjacent closed graphics may share at least one side.

In the present application, the metal pattern includes a rim structure of successively connected closed shapes, wherein the metal pattern has no closed shape of the same type within an arbitrary unit area (1 cm x 1 cm), and the closed shapes The number of vertex points may be different from the number of vertexes of the polygon formed by connecting the shortest distance between the centers of gravity of each of the closed graphics.

The number of vertexes of the closed graphics is different from the number of vertices of the polygon formed by connecting the shortest distance between the centers of gravity of each of the closed graphics. More specifically, the number of vertexes of the closed diagrams may be greater when compared to the number of vertexes of the polygons formed by connecting the shortest distance between the centers of gravity of each of the closed diagrams, and may be greater by 1.9 to 2.1 times However, the present invention is not limited thereto.

In the present application, the metal pattern comprises a rim structure of successively connected closed shapes, wherein the metal pattern has no closed shape of the same type within an arbitrary unit area (1 cm x 1 cm), and the closed shapes The value of the following equation (3) may be 50 or more.

&Quot; (3) "

(Standard deviation of distance between vertexes / average of distance between vertexes) x 100

In the present application, when an image of a transmissive diffraction pattern is obtained by irradiating linear light emitted from a light source onto one surface of the metal pattern, the image may have a value of (4) below 21.

&Quot; (4) "

(Standard deviation of intensity of transmission diffraction pattern according to angular region / average intensity of transmission diffraction pattern according to angular region) x 100

In Equation (4), the angular region means an area divided by 0 to 360 degrees from the center of the image of the transmissive diffraction pattern by 10 degrees.

When the image of the transmissive diffraction pattern is obtained, the image may have the value of Equation (4) be less than 21, less than 15, and less than 10.

In the present application, the metal pattern includes a frame structure of closed graphic objects connected in series, and the frame structure of the closed graphic objects may be variously modified, such as a straight line, a curve, a zigzag, or a combination thereof.

In the present application, the metal patterns may not have the same closed shapes within the unit area.

In the present application, the conductive pattern includes a frame structure of connected graphic objects connected in series, and an angle formed between the lines constituting the frame of the closed graphic objects on an arbitrary straight line is divided into 0 to 180 degrees to 10 degree units For the number of lines belonging to each angular range, the value of the following equation (5) may be less than 21, may be 15 or less, and may be 10 or less.

&Quot; (5) "

(Average of the number of lines corresponding to the standard deviation / angular range of the number of lines corresponding to the angular range) × 100

In the present application, the values of the equations (3) to (5) in the metal pattern can be calculated within a unit area of the electrically conductive pattern. The unit area may be an area where the metal pattern is formed, for example, 3.5 cm x 3.5 cm, but is not limited thereto.

The vertex is defined as a point at which the lines constituting the rim of the closed graphics of the metal pattern intersect with each other.

By forming the pattern as described above, it is possible to realize a fine metal pattern required for the touch screen. If a fine metal pattern can not be realized in a touch screen, properties required for a touch screen such as a resistor can not be achieved.

In the present application, the metal pattern is formed by arranging arbitrary points in regularly arranged unit unit cells, and then arranging the boundary structure of the closed shapes with the respective points connected with the closest point to the distance from the other points Lt; / RTI >

At this time, a metal pattern according to one embodiment of the present application can be formed when an irregularity is introduced into a method of arranging arbitrary points in the regularly arranged unit cell. For example, in the case where the irregularity degree is set to 0, if the unit cell is square, the metal pattern has a square mesh structure, and if the unit cell is regular hexagon, the metal pattern has a honeycomb structure.

The irregular pattern metal pattern according to one embodiment of the present application can suppress the tilting phenomenon of the lines forming the pattern and obtain a uniform transmittance from the display and maintain the same linear density with respect to the unit area And a uniform conductivity can be secured.

In the present application, the number of vertexes of closed shapes in the unit area (3.5 cm x 3.5 cm) of the metal pattern may be 6,000 or more, 7,000 or more, 15,000 or more, and 245,000 or less, This can be adjusted according to the desired permeability and conductivity of the person skilled in the art.

In the present application, the line width of the metal pattern is 10 μm or less, and the number of vertexes of the closed shapes in the area of 3.5 cm × 3.5 cm may be 6,000 to 245,000. In addition, the line width of the metal pattern is 7 占 퐉 or less, and the number of vertexes of the closed shapes in the area of 3.5 cm 占 3.5 cm may be 7,000 to 62,000. In addition, the line width of the metal pattern is 5 占 퐉 or less, and the number of vertexes of the closed shapes in the area of 3.5 cm 占 3.5 cm may be 15,000 to 62,000.

At least one of the figures constituting the pattern within the unit area may have a different form from the remaining figures.

In the present application, the darkening pattern and the metal pattern may have a side taper angle, but the darkening pattern or metal pattern located on the opposite side of the base side of the metal pattern may have an inverse taper angle .

Examples of the conductive structure according to one embodiment of the present application are illustrated in Figs. 1 to 3. Fig. 1 to 3 are illustrative of the order of lamination of the base material, the metal layer and the darkening layer, and the metal layer and the darkening layer may be in the form of a pattern rather than a front layer when actually applied to the use of a micro transparent electrode such as a touch screen panel .

Referring to FIG. 1, the darkening layer 200 is disposed between the substrate 100 and the metal layer 300. This can significantly reduce the reflectivity of the metal layer when the user views the touch screen panel on the substrate side.

Referring to FIG. 2, the darkening layer 200 is disposed on the metal layer 300. This can greatly reduce the reflectivity of the metal layer when the user views the touch screen panel on the opposite side of the substrate side.

3, the darkening layers 200 and 220 are disposed on both the substrate 100 and the metal layer 300 and on the metal layer 300, respectively. This can greatly reduce the reflectivity of the metal layer both when the user views the touch screen panel from the substrate side and when viewing from the opposite side.

The structure of the conductive structure according to one embodiment of the present application may be such that a dark coloring layer is provided on at least one surface of the metal layer.

The structure of the conductive structure according to one embodiment of the present application may be a structure in which a substrate, a darkened layer, a metal layer, and a darkened layer are sequentially laminated. In addition, the conductive structure may include an additional metal layer and a darkening layer on the outermost darkening layer.

That is, the structure of the conductive structure according to one embodiment of the present application is a structure of a substrate / a dark coloring layer / a metal layer, a structure of a substrate / a metal layer / a darkening layer, a structure / a darkening layer / a metal layer / The structure of the layer / metal layer, the substrate / dark coloration layer / metal layer / dark coloration layer / metal layer / structure of dark coloration layer, substrate / dark coloration layer / metal layer / dark coloration layer / metal layer / dark coloration layer / metal layer / dark coloration layer structure.

In one embodiment of the present application, the conductive structure may have a sheet resistance of 1 Ω / □ or more and 300 Ω / □ or less, specifically 1 Ω / □ or more and 100 Ω / □ or less, more specifically 1 Ω / □ Or more and 50 Ω / □ or less, and more specifically, 1 Ω / □ or more and 20 Ω / □ or less.

If the sheet resistance of the conductive structure is 1 Ω / □ or more and 300 Ω / □ or less, it is possible to replace the conventional ITO transparent electrode. In the case where the sheet resistance of the conductive structure is 1 Ω / □ or more and 100 Ω / □ or less, or 1 Ω / □ or more and 50 Ω / □ or less, especially 1 Ω / □ or more and 20 Ω / □ or less, Since the surface resistance is considerably low, the RC delay is shortened when the signal is applied, and the speed of the recognition of the touch can be remarkably improved. Thus, it is easy to apply the large-sized touch screen of 10 inches or more.

The sheet resistance of the metal layer or the darkening layer before patterning in the conductive structure may be more than 0? /? And not more than 2? /?, Specifically more than 0? /? And not more than 0.7? /. When the sheet resistance is 2 Ω / □ or less, especially 0.7 Ω / □ or less, the lower the sheet resistance of the metal layer or the darkening layer before patterning, the more easily the patterning design and manufacturing process becomes, and the sheet resistance of the conductive structure after patterning becomes lower, It is possible to increase the reaction rate of the reaction solution. The sheet resistance can be adjusted depending on the thickness of the metal layer or the darkening layer.

The conductive structure according to one embodiment of the present application may have an average extinction coefficient k in the visible light region of 0.2 to 1.5, specifically 0.4 to 1.0. When the average extinction coefficient k is 0.2 or more, darkening is possible. The average extinction coefficient k is also referred to as an absorption coefficient, and is a factor that determines how strongly a conductive structure absorbs light at a specific wavelength, and is a factor that determines the transmittance of the conductive structure. For example, for a transparent dielectric material, the k value is very small with k <0.2. However, as the metal content increases, the k value increases. If the metal content is further increased, the metal is hardly permeated and only the surface is reflected, and the extinction coefficient k is more than 1.5, which is not preferable for forming the colored layer.

In one embodiment of the present application, the conductive structure may have an average refractive index of 2 to 3 in the visible light region.

In this specification, the visible light region means a region having a wavelength of 360 to 820 nm.

In one embodiment of the present invention, the thickness of the darkening layer may be 20 nm to 60 nm, specifically 25 nm to 50 nm, more specifically 30 nm to 50 nm. If the thickness is less than 20 nm, it may not be easy to control the process. If the thickness is more than 60 nm, it may be disadvantageous in terms of production speed. can do. More specifically, when the thickness is 25 nm or more and 50 nm or less, more specifically, when the thickness is 30 nm to 50 nm, the process can be easily controlled and the production speed can be improved, which can be more advantageous in the manufacturing process. In this case, the reflectance is further reduced, and the maturing layer is formed more well, which is more advantageous.

In one embodiment of the present invention, the total reflection of the darkening layer may be less than 20%, specifically less than 15%, more specifically less than 10%, and even more specifically less than 5% And can be less than 3%. The smaller the total reflectance is, the better the effect is.

The total reflectance may be measured in the opposite surface direction of the surface where the darkening layer is in contact with the metal layer. When measured in this direction, the total reflectance may be 20% or less, specifically 15% or less, more specifically 10% or less, still more specifically 5% or less and 3% or less. The smaller the reflectance is, the better the effect is.

Further, the darkening layer may be provided between the metal layer and the substrate, and measured at the substrate side. When the total reflectance is measured on the substrate side, the total reflectance may be 20% or less, specifically 15% or less, more specifically 10% or less, more specifically 5% or less, have. The smaller the total reflectance is, the better the effect is.

In this specification, the total reflectance is obtained by treating the opposite surface of the surface to be measured with a perfect black, then irradiating the surface to be measured with a wavelength of 300 to 800 nm, specifically, 380 to 780 nm Specifically, it means the reflectance for light of 550 nm.

In one embodiment of the present application, the conductive structure may have a total reflectance of 20% or less, specifically 15% or less, more specifically 10% or less, and still more specifically 6% or less have. The smaller the total reflectance is, the better the effect is.

In this specification, the total reflectance refers to the wavelength of 300 to 680 nm, specifically 450 to 650 nm, more specifically 550 nm, of the reflected light reflected by the target pattern layer or the conductive structure on which light is incident when the incident light is 100% . &Lt; / RTI >

In the conductive structure according to one embodiment of the present application, the darkening pattern may include a first surface in contact with the metal pattern and a second surface opposite to the first surface. When the total reflectance of the conductive structure on the second surface side of the darkened pattern is measured, the total reflectance (Rt) of the conductive structure can be calculated by the following equation (1).

[Equation 1]

Total reflectance (Rt) = reflectance of base material + closure rate x reflectance of darkening pattern

When the conductive structure is laminated with two conductive structures, the total reflectance (Rt) of the conductive structure can be calculated by the following equation (2).

&Quot; (2) "

Total reflectance (Rt) = reflectance of base material + closure rate x reflectance of darkening pattern x 2

The reflectance of the above-described equations (1) and (2) may be the reflectance of the touch-enhanced glass and may be the reflectance of the film when the surface is a film.

In addition, the closing rate can be expressed by the area ratio occupied by the area covered by the metal pattern with respect to the plane of the conductive structure, that is, (1 - opening ratio).

Therefore, the difference between the case with and without the darkening pattern depends on the reflectance of the darkening pattern. From this viewpoint, the total reflectance Rt of the conductive structure according to an embodiment of the present application is reduced by 10 to 20% as compared with the total reflectance (R ₀ ) of the conductive structure having the same configuration, except that the darkening pattern is absent And may be 20-30% reduced, 30-40% reduced, 40-50% reduced, and 50-70% reduced. That is, when the coverage ratio is changed in the range of 1 to 10% and the reflectance range is changed in the range of 1 to 30% in the above Equations 1 and 2, the total reflection reduction effect can be maximized by 70% The total reflectance reduction effect can be exhibited.

In the conductive structure according to one embodiment of the present application, the darkening pattern includes a first surface in contact with the metal pattern and a second surface opposite to the first surface, and the second surface of the darkening pattern The total reflectance Rt of the conductive structure may be 40% or less of the total reflectance R ₀ of the base material, may be 30% or less, and may be 20% or less when the total reflectance of the conductive structure is measured And can be less than 10%.

In one embodiment of the present application, the conductive structure may have a brightness value L * of 50 or less based on CIE (Commission Internationale de l'Eclairage) L * a * b * color coordinate reference, May be 20 or less. The lower the brightness value, the lower the total reflectance, which is advantageous.

Further, in the conductive structure according to one embodiment of the present application, the darkening pattern may be provided directly on the substrate or directly on the metal pattern without interposing an adhesive layer or an adhesive layer. The adhesive layer or the adhesive layer may affect durability and optical properties. Further, the conductive structure according to one embodiment of the present application has a completely different manufacturing method as compared with the case of using the adhesive layer or the adhesive layer. Furthermore, in one embodiment of the present application, the interface property between the substrate or the metal pattern and the darkened pattern is excellent, compared with the case of using the adhesive layer or the adhesive layer.

In one embodiment of the present application, the darkening pattern may be a single layer or a plurality of layers of two or more layers.

In one embodiment of the present application, it is preferable that the darkened pattern has an achromatic color. In this case, the hue of the achromatic series means a color which appears when light incident on the surface of the object is not selectively absorbed but is reflected and absorbed evenly with respect to the wavelength (wavelength) of each component.

The electronic device includes, but is not limited to, a touch screen panel, a display device, and a solar cell.

More specifically, for example, in a capacitive touch screen panel, the conductive structure according to an embodiment of the present invention can be used as a touch sensitive electrode substrate.

The touch screen panel may further include additional structures in addition to the conductive structure including the above-described substrate, metal layer, and darkening layer. In this case, the two structures may be arranged in the same direction, or the two structures may be arranged in directions opposite to each other. The two or more structures that may be included in the touch screen panel of the present invention need not be of the same structure and only one of the structures closest to the user, preferably the user, including the substrate, the metal layer, And the further included structure may not include the patterned darkening layer. Further, the layer lamination structures in two or more structures may be different from each other. When two or more structures are included, an insulating layer may be provided therebetween. At this time, the insulating layer may be further given the function of the adhesive layer.

A touch screen panel according to an embodiment of the present application includes a lower substrate; An upper substrate; And an electrode layer provided on at least one side of a surface of the lower substrate contacting the upper substrate and a surface of the upper substrate contacting the lower substrate. The electrode layers can perform X-axis position detection and Y-axis position detection functions, respectively.

An electrode layer provided on a surface of the lower substrate and an upper substrate of the lower substrate; And an electrode layer provided on a surface of the upper substrate and the lower substrate of the upper substrate that are in contact with the lower substrate may be a conductive structure according to one embodiment of the presently filed application. If only one of the electrode layers is a conductive structure according to the present application, the other one may have a metal pattern known in the art.

When an electrode layer is formed on one surface of both the upper substrate and the lower substrate to form a two-layer electrode layer, an insulating layer or a spacer is interposed between the lower substrate and the upper substrate so as to maintain a constant interval between the electrode layers and prevent connection. . The insulating layer may include a pressure-sensitive adhesive or a UV or thermosetting resin. The touch screen panel may further include a ground portion connected to the metal pattern of the conductive structure. For example, the ground portion may be formed at the edge portion of the surface of the substrate on which the metal pattern is formed. In addition, at least one of an antireflection film, a polarizing film, and an inner fingerprint film may be provided on at least one side of the laminate including the conductive structure. But may further include other types of functional films other than the above-described functional films according to design specifications. The touch screen panel may be applied to a display device such as an OLED display panel (PDP), a liquid crystal display (LCD), a cathode ray tube (CRT), or a PDP.

In the touch screen panel according to one embodiment of the present application, metal patterns and darkening patterns may be provided on both sides of the substrate.

The touch screen panel according to one embodiment of the present application may further include an electrode portion or a pad portion on the conductive structure. At this time, the effective screen portion, the electrode portion and the pad portion may be composed of the same conductor.

In the touch screen panel according to one embodiment of the present application, the darkening pattern may be provided on a side where the user views the touch screen panel.

Also, in the display device, a conductive structure according to one embodiment of the present application can be used for a color filter substrate or a thin film transistor substrate.

In addition, the solar cell may include an anode electrode, a cathode electrode, a photoactive layer, a hole transporting layer, and / or an electron transporting layer. The conductive structure according to one embodiment of the present application may be used as the anode electrode and / have.

The conductive structure can replace the conventional ITO in a display device or a solar cell, and can be utilized as a flexible application. In addition, it can be utilized as a next-generation transparent electrode together with CNT, conductive polymer, and graphene.

Hereinafter, the present invention will be described in more detail with reference to Examples, Comparative Examples and Experimental Examples. However, the following Examples, Comparative Examples and Experimental Examples are provided for illustrating the present invention, and thus the scope of the present invention is not limited thereto.

< Example >

< Example 1 to 8>

A Cu layer having a thickness of 100 nm was formed as a conductive layer by an intermediate frequency sputtering method using a Cu single target on a glass substrate. The Cu source was evaporated at 0.15 nm / s, 1.5 nm / s, 1 nm / s, 2 nm / s, and the like by the E-beam evaporation method as shown in Table 1 below. (0 < x < = 1) having a thickness of 30 to 50 nm was deposited on the substrate by ion implantation at an anode voltage of 100 V, 200 V, 300 V, and an anode current of 5 A to activate the O ₂ gas.

[Table 1]

< Example 9>

A Cu layer having a thickness of 100 nm was formed as a conductive layer by an intermediate frequency sputtering method using a Cu single target on a glass substrate. The Cu source was evaporated at 0.15 nm / s by an E-beam evaporation method, and an anode voltage of 100 V and an anode current of 5 A was applied to the ion gun to form N ₂ gas. (0 < x < = 1) having a thickness of 30 to 40 nm was deposited on the surface of the substrate to form a conductive structure.

< Example 10>

An Al layer having a thickness of 100 nm was formed as a conductive layer by an intermediate frequency sputtering method using an Al single target on a glass substrate. An Al source was evaporated at 0.5 nm / s by an E-beam evaporation method, and an anode voltage of 200 V and an anode current of 5 A was applied to the ion gun to form N ₂ gas. (0 < x < = 1) having a thickness of 30 to 40 nm was deposited on the substrate to form a conductive structure.

< Comparative Example 1>

An Al layer having a thickness of 100 nm was formed as a conductive layer by an intermediate frequency sputtering method using an Al single target on a glass substrate. AlNx (0 < x < = 1) having a thickness of 60 nm is formed by activating N ₂ gas by an Al source by DC sputtering method by adjusting the ratio of oxygen and nitrogen gas thereon Thereby forming a conductive structure.

< Experimental Example >

As one embodiment of the present application, the reflectance spectrum of a conductive structure including Cu-based and Al-based matting layers is shown in FIG. More specifically, FIG. 4 is a diagram showing the reflectance of a darkened layer deposited by evaporation deposition. CuOx and CuNx are the results of depositing oxides and nitrides on Cu 100 nm. AlNx is the result of depositing nitride over Al 100nm. The average reflectance of each of the samples was 15.7% for AlNx, 17.7% for CuOx and 16.1% for CuNx.

As an embodiment of the present application, the optical constant (n, k) of the Cu-based matting layer is shown in Fig. More specifically, FIG. 5 is a plot of refractive index coefficients and extinction coefficients of CuOx and CuNx with respect to wavelengths of 380 to 780 nm. Both materials have an average extinction coefficient of less than 1.5 and are sufficient to form a dark coloration layer. Furthermore, for CuOx, this value was less than 0.5, which was suitable for use with darkened electrodes.

As one embodiment of the present application, the reflectance spectrum before and after the high temperature and high humidity test of the Cu-based dark coloring layer is shown in Fig. More specifically, FIG. 6 shows stability under high temperature and high humidity. The stability in a harsh environment can be confirmed by virtue of almost no change in reflectance even after being left in a 60 ° C. and 90% constant temperature and humidity chamber for 120 hours.

Claims

Forming a metal layer on the substrate, and
And forming a darkening layer on the metal layer,
Wherein the step of forming the darkening layer is performed by a vapor deposition method.

Forming a darkening layer on the substrate, and
And forming a metal layer on the darkening layer,
Wherein the step of forming the darkening layer is performed by a vapor deposition method.

The method of manufacturing a conductive structure according to claim 1 or 2, wherein the darkening layer comprises at least one selected from the group consisting of a metal oxide, a metal nitride, and a metal oxynitride.

The method of claim 1 or 2, wherein the evaporation deposition method uses electron beam evaporation.

[4] The method of claim 3, wherein the evaporation deposition is performed by directly evaporating at least one selected from the group consisting of a metal oxide, a metal nitride, and a metal oxynitride.

[4] The method of claim 3, wherein the evaporation deposition process is performed by evaporating a metal and activating at least one selected from the group consisting of O ₂ gas and N ₂ gas to produce a metal oxide, a metal nitride or a metal oxynitride Wherein the conductive structure is formed of a conductive material.

7. The method of claim 6, wherein at least one activation selected from the group consisting of O ₂ gas and N ₂ gas uses an ion gun.

The method of claim 3, wherein the metal oxide, metal nitride, or metal oxynitride comprises at least one metal selected from the group consisting of Fe, Co, Ti, V, Al, Au, Cu, Ag, Gt; to < / RTI >

4. The method of claim 3, wherein the metal layer and the quenched layer contain the same metal atom.

The method according to claim 1 or 2, wherein the forming of the metal layer is performed by a sputtering process or a vapor deposition process.

The method of manufacturing a conductive structure according to claim 1 or 2, wherein the metal layer comprises at least one selected from the group consisting of copper, aluminum, silver, neodymium, molybdenum, nickel, and alloys thereof.

The method of manufacturing a conductive structure according to claim 1 or 2, further comprising the step of patterning the metal layer and the quenched layer separately or simultaneously.

A conductive structure produced by the method for manufacturing a conductive structure according to claim 1 or 2.

14. The conductive structure according to claim 13, wherein the darkening layer has a total reflectance of not more than 20% measured in a direction opposite to the surface in contact with the metal layer.

[Claim 14] The conductive structure according to claim 13, wherein the darkening layer is provided between the metal layer and the substrate, and the total reflectance measured at the substrate side is 20% or less.

14. The conductive structure according to claim 13, wherein the sheet resistance of the conductive structure is not less than 1 [Omega] / square and not more than 300 [Omega] / square.

The conductive structure according to claim 13, wherein the average extinction coefficient (k) in the visible light region of the conductive structure is 0.4 to 1.0.

14. The conductive structure according to claim 13, wherein the conductive structure has a lightness value (L *) of 50 or less on the basis of a CIE L * a * b * color coordinate.

An electronic device comprising the conductive structure of claim 13.