WO2020191961A1 - 波导型GePb红外光电探测器及其制造方法 - Google Patents

波导型GePb红外光电探测器及其制造方法 Download PDF

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WO2020191961A1
WO2020191961A1 PCT/CN2019/096552 CN2019096552W WO2020191961A1 WO 2020191961 A1 WO2020191961 A1 WO 2020191961A1 CN 2019096552 W CN2019096552 W CN 2019096552W WO 2020191961 A1 WO2020191961 A1 WO 2020191961A1
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gepb
waveguide
silicon substrate
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汪巍
方青
涂芝娟
曾友宏
蔡艳
王庆
王书晓
余明斌
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上海新微技术研发中心有限公司
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    • H—ELECTRICITY
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    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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Definitions

  • the invention relates to the technical field of optoelectronics, in particular to a waveguide type GePb infrared photodetector and a manufacturing method thereof.
  • the photodetector has a wide range of uses, covering various fields of the military and national economy, such as in the visible light and short-wave infrared bands, it is mainly used for ray measurement and detection, industrial automatic control, photometric measurement, etc.
  • Infrared photodetectors are widely used in fields such as communications, night vision, guidance, astronomical observation, and biomedicine.
  • the infrared detectors commonly used today are mainly III-V group material photodetectors and II-V group material photodetectors.
  • III-V materials and Group II-V materials have the problem of incompatibility with the Si-based CMOS (Complementary Metal Oxide Semiconductor) standard process platform, which increases device cost and reduces device reliability.
  • Si-based CMOS Complementary Metal Oxide Semiconductor
  • the IV infrared photodetectors are compatible with Si-based CMOS technology in terms of preparation process, and are small in size, easy to integrate, and low in size. Potential advantages such as cost and high performance.
  • Ge photodetectors based on Si substrates or SOI (Silicon On Insulator) substrates have been widely used in the fields of communication and sensing.
  • the absorption coefficient of a single Ge material drops sharply when the wavelength is greater than 1.55 microns, which makes the Ge photodetector unable to meet the detection requirements of the short-wave infrared or even the mid-infrared band, thus limiting the detection range of the Ge photodetector.
  • a vertical GeSn infrared photodetector has appeared in the prior art to solve the problem that Ge photodetectors cannot meet the detection requirements of short-wave infrared and even mid-infrared bands.
  • the epitaxial growth of GeSn materials is extremely challenging.
  • the invention provides a waveguide type GePb infrared photodetector and a manufacturing method thereof, which are used to solve the problem of the narrow detection range of the existing Ge photodetector.
  • the present invention provides a waveguide type GePb infrared photodetector, which includes a silicon substrate, a waveguide layer and a device structure all located on the surface of the silicon substrate; The lower contact layer, the absorption layer and the upper contact layer are sequentially stacked in the direction of the substrate.
  • the material of the absorption layer is Ge 1-x Pb x , where 0 ⁇ x ⁇ 1; the optical signal in the waveguide layer passes Evanescent waves are coupled into the device structure.
  • the device structure further includes:
  • a first buffer layer located between the lower contact layer and the absorption layer
  • a second buffer layer located between the absorption layer and the upper contact layer.
  • the materials of the first buffer layer and the second buffer layer are both Ge or SiGe.
  • the material of the waveguide layer is silicon; the material of the lower contact layer is a silicon material with a first doping ion; the material of the upper contact layer is a Ge material with a second doping ion, and The conductivity type of the second doping ion is opposite to that of the first doping ion.
  • the present invention also provides a method for manufacturing a waveguide type GePb infrared photodetector, which includes the following steps:
  • a device structure is formed on the surface of the silicon substrate, and the device structure includes a lower contact layer, an absorption layer, and an upper contact layer sequentially stacked in a direction perpendicular to the silicon substrate.
  • the material of the absorption layer is Ge 1 -x Pb x , where 0 ⁇ x ⁇ 1; the optical signal in the waveguide layer enters the device structure through evanescent wave coupling.
  • the silicon substrate includes a bottom layer of silicon, a buried oxide layer and a top layer of silicon that are sequentially stacked along its axial direction; the specific steps of forming a waveguide layer on the surface of the silicon substrate include:
  • the top layer silicon is etched to form the waveguide layer, and a device area is defined in the top layer silicon.
  • the specific steps of forming a device structure on the surface of the silicon substrate include:
  • An upper contact layer is formed on the surface of the second buffer layer.
  • the specific steps of forming an absorption layer on the surface of the lower contact layer include:
  • Pb ions are implanted from the surface of the pre-absorption layer away from the lower contact layer to form the absorption layer whose material is Ge 1-x Pb x .
  • the waveguide type GePb infrared photodetector and the manufacturing method thereof of the present invention by arranging Ge 1-x Pb x materials in the absorption layer of the device structure, the photodetector can achieve high-efficiency absorption in the short-wave infrared to mid-wave infrared band.
  • group III-V infrared photodetectors it is easy to integrate with Si; compared with the existing Ge photodetectors, it has a wider detection range; compared with vertical incidence photodetectors, it is easier to integrate with other light Active or passive device integration, and has higher detection sensitivity.
  • Figure 1 is a schematic diagram of the overall structure of a waveguide type GePb infrared photodetector in a specific embodiment of the present invention
  • Figure 2 is a schematic cross-sectional view of the device structure in the waveguide type GePb infrared photodetector in the specific embodiment of the present invention
  • Figure 3 is a flow chart of a method for manufacturing a waveguide type GePb infrared photodetector in a specific embodiment of the present invention
  • Figures 4A-4F are schematic cross-sectional views of main processes in the process of manufacturing the waveguide type GePb infrared photodetector in this embodiment.
  • FIG. 1 is a schematic diagram of the overall structure of a waveguide type GePb infrared photodetector in a specific embodiment of the present invention.
  • FIG. 2 is a waveguide type in the specific embodiment of the present invention.
  • the waveguide type GePb infrared photodetector provided by this embodiment includes a silicon substrate 10, a waveguide layer 11 and a device structure all located on the surface of the silicon substrate 10; the device structure includes The lower contact layer 12, the absorption layer 13, and the upper contact layer 14 are sequentially stacked in a direction perpendicular to the silicon substrate 10.
  • the material of the absorption layer 13 is Ge 1-x Pb x , where 0 ⁇ x ⁇ 1;
  • the optical signal in the waveguide layer 11 enters the device structure through evanescent wave coupling.
  • the silicon substrate 10 is preferably an SOI substrate including a bottom silicon 20, a buried oxide layer 21, and a top silicon.
  • the waveguide layer 11 is formed by etching the top silicon of the SOI substrate.
  • the waveguide layer 11 can be connected to the lower contact layer 12, and external optical signals are coupled into the device structure through the waveguide layer 11.
  • the detection range of the Ge photodetector can be expanded, so that the Ge photodetector can achieve high-efficiency absorption in the short-wave infrared to the mid-wave infrared band; another On the one hand, the detection range of the photodetector can be broadened by introducing a smaller content of Pb component, and the Pb component can be injected into the Ge material by means of ion implantation, which breaks the epitaxial growth of the absorption layer in the prior art The limitations.
  • the detection range of the infrared photodetector is extended to more than 3 ⁇ m to adapt to different detection requirements, preferably, 0.001 ⁇ x ⁇ 0.02.
  • the device structure further includes:
  • a first buffer layer 17 located between the lower contact layer 12 and the absorption layer 13;
  • the second buffer layer 18 is located between the absorption layer 13 and the upper contact layer 14.
  • the absorption layer 13 may be formed by a combination of selective epitaxial growth of Ge material and Pb ion implantation.
  • the materials of the first buffer layer 17 and the second buffer layer 18 are both Ge or SiGe.
  • the specific thickness of the first buffer layer 17 and the second buffer layer 18 can be selected by those skilled in the art according to actual needs.
  • the material of the waveguide layer 11 is silicon; the material of the lower contact layer 12 is a silicon material with a first doping ion; the material of the upper contact layer 14 is a Ge material with a second doping ion , And the conductivity type of the second doping ion is opposite to that of the first doping ion.
  • the first doping ion is an N-type ion
  • the second doping ion is a P-type ion
  • the first doping ion is a P-type ion
  • the second doping ion is N -Type ion.
  • the first doping ion as an N-type ion
  • the second doping ion as a P-type ion
  • the lower contact layer 12 is a silicon material layer doped with N-type ions, and its doping concentration may be 2 ⁇ 10 19 cm -3
  • the upper contact layer 14 is doped with P-type ions.
  • the ion Ge material layer may have a doping concentration of 2 ⁇ 10 19 cm ⁇ 3 ; the material of the first buffer layer 17 may be Ge or SiGe; the material of the second buffer layer 18 may be Ge or SiGe.
  • the device structure further includes an N-electrode 16 on the surface of the lower contact layer 12 and a P-electrode 15 on the surface of the upper contact 14.
  • the material of the N-electrode 16 and the P-electrode 15 may be but not limited to metallic aluminum.
  • FIG. 3 is a flow chart of the method for manufacturing a waveguide type GePb infrared photodetector in a specific embodiment of the present invention.
  • FIG. 4A- 4F is a schematic cross-sectional view of the main process in the process of manufacturing the waveguide type GePb infrared photodetector in this embodiment.
  • the structure of the waveguide type GePb infrared photodetector manufactured in this embodiment can be seen in FIGS. 1 and 2.
  • the manufacturing method of the waveguide type GePb infrared photodetector provided by this embodiment includes the following steps:
  • Step S31 providing a silicon substrate.
  • Step S32 forming a waveguide layer 11 on the surface of the silicon substrate, as shown in FIG. 4B.
  • the silicon substrate includes a bottom silicon 20, a buried oxide layer 21, and a top silicon 22 that are sequentially stacked along its axial direction, as shown in FIG. 4A; the waveguide layer 11 is formed on the surface of the silicon substrate.
  • the steps include:
  • the top silicon 22 is etched to form the waveguide layer 11, and a device region 40 is defined in the top silicon 22, as shown in FIG. 4B.
  • photolithography and dry etching processes can be used to etch the top silicon 22 in the silicon substrate to form the waveguide layer 11, and define a device area in the top silicon 22 40.
  • the width of the device region 40 is greater than the width of the waveguide layer 11, for example, the width of the waveguide layer 11 is 500 nm, and the width of the device region 40 is 10 ⁇ m.
  • a device structure is formed on the surface of the silicon substrate.
  • the device structure includes a lower contact layer 12, an absorption layer 13, and an upper contact layer 14 which are sequentially stacked in a direction perpendicular to the silicon substrate.
  • the material of the layer 13 is Ge 1-x Pb x , where 0 ⁇ x ⁇ 1; the optical signal in the waveguide layer 11 enters the device structure through evanescent wave coupling, as shown in FIGS. 2 and 4F.
  • the specific steps of forming a device structure on the surface of the silicon substrate include:
  • An upper contact layer 14 is formed on the surface of the second buffer layer 18.
  • the specific steps of forming the absorption layer 13 on the surface of the lower contact layer 12 include:
  • Pb ions are implanted from the surface of the pre-absorption layer away from the lower contact layer to form the absorption layer 13 made of Ge 1-x Pb x .
  • the first dopant ion is an N-type ion and the second dopant ion is a P-type ion as an example.
  • a photolithography process is first used to define the range of the lower contact layer 12 in the device region 40, and then ion implantation and high temperature annealing are used.
  • the lower contact layer 12 is formed.
  • the doping concentration of the first doping ions in the lower contact layer 12 is 2 ⁇ 10 19 cm ⁇ 3 .
  • a Ge material or SiGe material is deposited on the surface of the lower contact layer 12 by chemical vapor deposition, physical vapor deposition, or atomic layer deposition to form the first buffer layer 17.
  • a silicon dioxide hard mask is used to define an absorption region on the surface of the first buffer layer 17 away from the lower contact layer 12, and the Ge material is epitaxially grown on the absorption region by a chemical vapor deposition method to form
  • the pre-absorption layer 41 is as shown in FIG. 4C.
  • Pb ions are implanted from the surface of the pre-absorption layer 41 away from the lower contact layer 12, and laser annealing is performed to form the absorption layer 13 made of Ge 1-x Pb x , as shown in FIG. 4D.
  • the implantation dose of Pb ions can be 6 ⁇ 10 15 cm -2 , the implantation energy is 40keV; after implantation, 248nm excimer laser is used for annealing treatment, the laser pulse width and number are 23ns and 5 times respectively, and the laser energy density is 400mJ /cm 2 .
  • the doping concentration of P-type ions in the upper contact layer 14 may be 2 ⁇ 10 19 cm ⁇ 3 .
  • a passivation material is deposited on the surfaces of the upper contact layer 14 and the lower contact layer 12 to form an anti-reflective layer; and the anti-reflective layer is etched by photolithography and dry etching processes to form exposed areas The N-electrode trench of the lower contact layer 12 and the P-electrode trench that exposes the upper contact layer 14; finally, a process such as magnetron sputtering is used to deposit metal materials on the N-electrode trench and the The P-electrode trenches form the N-electrode 16 and the P-electrode 15, as shown in FIG. 4F.
  • the metal material can be but not limited to metal aluminum.
  • the detection range of the infrared photodetector is extended to more than 3 ⁇ m to adapt to different detection requirements, preferably, 0.001 ⁇ x ⁇ 0.02.
  • the waveguide type GePb infrared photodetector and the manufacturing method thereof by arranging the Ge 1-x Pb x material in the absorption layer of the device structure, the photodetector can achieve efficient absorption in the short-wave infrared to the medium-wave infrared band. .
  • group III-V infrared photodetectors it is easy to integrate with Si; compared with the existing Ge photodetectors, it has a wider detection range; compared with vertical incidence photodetectors, it is easier to integrate with other light Active or passive device integration, and has higher detection sensitivity.

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Abstract

一种波导型GePb红外光电探测器及其制造方法。所述波导型GePb红外光电探测器，包括硅衬底（10）以及均位于所述硅衬底（10）表面的波导层（11）和器件结构；所述器件结构包括沿垂直于所述硅衬底（10）的方向依次叠置的下接触层（12）、吸收层（13）和上接触层（14），所述吸收层（13）的材料为Ge 1-xPb x，其中，0<x<1；所述波导层（11）中的光信号通过倏逝波耦合进入所述器件结构。使得光电探测器在短波红外到中波红外波段都能实现高效吸收。

Description

波导型GePb红外光电探测器及其制造方法 技术领域
本发明涉及光电子技术领域，尤其涉及一种波导型GePb红外光电探测器及其制造方法。
背景技术
光电探测器用途广泛，涵盖军事和国民经济的各个领域，如在可见光和短波红外波段主要用于射线测量和探测、工业自动控制、光度计量等。
红外光电探测器在通信、夜视、制导、天文观测、生物医疗等领域都有着广泛的应用。现今常用的红外探测器主要为Ⅲ-Ⅴ族材料光电探测器和Ⅱ-Ⅴ族材料光电探测器。然而，Ⅲ-Ⅴ族材料和Ⅱ-Ⅴ族材料存在与Si基CMOS(Complementary Metal Oxide Semiconductor，互补金属氧化物半导体)标准工艺平台不兼容的问题，增加了器件成本，降低了器件可靠性。
相较于传统的Ⅲ-Ⅴ族红外光电探测器和Ⅱ-Ⅴ族红外光电探测器，IV族红外光电探测器因其在制备工艺上与Si基CMOS工艺兼容，具有体积小、易集成、低成本、高性能等潜在优势。基于Si衬底或者SOI(Silicon On Insulator，绝缘体上硅)衬底的Ge光电探测器在通讯及传感领域获得了广泛应用。然而，单一的Ge材料在波长大于1.55微米时，吸收系数急剧下降，这就使得Ge光电探测器无法满足短波红外乃至中红外波段的探测需求，从而限制了Ge光电探测器的探测范围。为此，现有技术中已经出现了垂直型GeSn红外光电探测器，用以解决Ge光电探测器无法满足短波红外乃至中红外波段的探测需求。但是，受限于Ge中极低的Sn固溶度，GeSn材料的外延生长极具挑战。
因此，如何拓宽Ge光电探测器的探测范围，是目前亟待解决的技术问题。
发明内容
本发明提供一种波导型GePb红外光电探测器及其制造方法，用于解决现有的Ge光电探测器的探测范围较窄的问题。
为了解决上述问题，本发明提供了一种波导型GePb红外光电探测器，包括硅衬底以及均位于所述硅衬底表面的波导层和器件结构；所述器件结构包括沿垂直于所述硅衬底的方向依次叠置的下接触层、吸收层和上接触层，所述吸收层的材料为Ge 1-xPb x，其中，0<x<1；所述波导层中的光信号通过倏逝波耦 合进入所述器件结构。
优选的，所述器件结构还包括：
位于所述下接触层与所述吸收层之间的第一缓冲层；
位于所述吸收层与所述上接触层之间的第二缓冲层。
优选的，所述第一缓冲层与所述第二缓冲层的材料均为Ge或者SiGe。
优选的，所述波导层的材料为硅；所述下接触层的材料为具有第一掺杂离子的硅材料；所述上接触层的材料为具有第二掺杂离子的Ge材料，且所述第二掺杂离子与所述第一掺杂离子的导电类型相反。
优选的，0.001<x<0.02。
为了解决上述问题，本发明还提供了一种波导型GePb红外光电探测器的制造方法，包括如下步骤：
提供硅衬底；
形成波导层于所述硅衬底表面；
形成器件结构于所述硅衬底表面，所述器件结构包括沿垂直于所述硅衬底的方向依次叠置的下接触层、吸收层和上接触层，所述吸收层的材料为Ge 1-xPb x，其中，0<x<1；所述波导层中的光信号通过倏逝波耦合进入所述器件结构。
优选的，所述硅衬底包括沿其轴向方向依次叠置的底层硅、埋氧化层和顶层硅；形成波导层于所述硅衬底表面的具体步骤包括：
刻蚀所述顶层硅，形成所述波导层、并于所述顶层硅中定义出器件区域。
优选的，形成器件结构于所述硅衬底表面的具体步骤包括：
于所述器件区域注入第一掺杂离子，形成所述下接触层；
形成第一缓冲层于所述下接触表面；
形成吸收层于所述第一缓冲层表面；
形成第二缓冲层于所述吸收层表面；
形成上接触层于所述第二缓冲层表面。
优选的，形成吸收层于所述下接触层表面的具体步骤包括：
沉积Ge材料于所述下接触层表面，形成预吸收层；
自所述预吸收层背离所述下接触层的表面注入Pb离子，形成材料为 Ge 1-xPb x的所述吸收层。
优选的，0.001<x<0.02。
本发明波导型GePb红外光电探测器及其制造方法，通过在器件结构的吸收层中设置Ge 1-xPb x材料，使得光电探测器在短波红外到中波红外波段都能实现高效吸收。与Ⅲ-Ⅴ族红外光电探测器相比，容易与Si集成；与现有的Ge光电探测器相比，具有更广的探测范围；与垂直入射型光电探测器相比，更容易与其他光有源或无源器件集成，且拥有更高的探测灵敏度。
附图说明
附图1是本发明具体实施方式中波导型GePb红外光电探测器的整体结构示意图；
附图2是本发明具体实施方式中波导型GePb红外光电探测器中器件结构的截面示意图；
附图3是本发明具体实施方式中波导型GePb红外光电探测器的制造方法流程图；
附图4A-4F是本具体实施方式在制造波导型GePb红外光电探测器过程中的主要工艺截面示意图。
具体实施方式
下面结合附图对本发明提供的波导型GePb红外光电探测器及其制造方法的具体实施方式做详细说明。
本具体实施方式提供了一种波导型GePb红外光电探测器，附图1是本发明具体实施方式中波导型GePb红外光电探测器的整体结构示意图，附图2是本发明具体实施方式中波导型GePb红外光电探测器中器件结构的截面示意图。如图1、图2所示，本具体实施方式提供的波导型GePb红外光电探测器包括硅衬底10以及均位于所述硅衬底10表面的波导层11和器件结构；所述器件结构包括沿垂直于所述硅衬底10的方向依次叠置的下接触层12、吸收层13和上接触层14，所述吸收层13的材料为Ge 1-xPb x，其中，0<x<1；所述波导层11中的光信号通过倏逝波耦合进入所述器件结构。
具体来说，所述硅衬底10优选为包括底层硅20、埋氧化层21和顶层硅的SOI衬底，通过对所述SOI衬底的顶层硅进行刻蚀，形成所述波导层11。所述 波导层11可以与所述下接触层12连接，外界光信号经所述波导层11耦合进所述器件结构。本具体实施方式通过在所述吸收层13中引入Pb组分，一方面可以拓展Ge光电探测器的探测范围，使得Ge光电探测器在短波红外到中波红外波段都能实现高效吸收；另一方面，由于只需引入较小含量的Pb组分即可实现光电探测器探测范围的拓宽，并且可以采用离子注入等方式向Ge材料中注入Pb组分，打破了现有技术中吸收层外延生长的局限性。
本领域技术人员可以根据实际需要调整所述吸收层13中Pb的组分(即x的数值)，从而实现对所述吸收层13吸收系数的调整，使得用户可以制造出具有不同探测范围的红外光电探测器。本具体实施方式中所述的组分是指摩尔分数。
为了使得探测器具有较宽的探测范围，例如使得所述红外光电探测器的探测范围延伸至3μm以上，以适应于不同的探测需求，优选的，0.001<x<0.02。
为了减小所述器件结构内部的应力，从而进一步改善红外光电探测器的性能，优选的，所述器件结构还包括：
位于所述下接触层12与所述吸收层13之间的第一缓冲层17；
位于所述吸收层13与所述上接触层14之间的第二缓冲层18。
由于本具体实施方式中只需引入较小含量的Pb组分，即可实现光电探测器探测范围的延伸。因此，可以采用Ge材料的选择性外延生长与Pb离子注入相结合的方式来形成所述吸收层13。
优选的，所述第一缓冲层17与所述第二缓冲层18的材料均为Ge或者SiGe。其中，所述第一缓冲层17与所述第二缓冲层18的具体厚度，本领域技术人员可以根据实际需要进行选择。
优选的，所述波导层11的材料为硅；所述下接触层12的材料为具有第一掺杂离子的硅材料；所述上接触层14的材料为具有第二掺杂离子的Ge材料，且所述第二掺杂离子与所述第一掺杂离子的导电类型相反。
所述第一掺杂离子为N-型离子，所述第二掺杂离子为P-型离子；或者，所述第一掺杂离子为P-型离子，所述第二掺杂离子为N-型离子。以下以所述第一掺杂离子为N-型离子、所述第二掺杂离子为P-型离子为例进行说明。具体来说，所述下接触层12为掺杂有N-型离子的硅材料层，其掺杂浓度可以为 2×10 19cm -3；所述上接触层14为掺杂有P-型离子的Ge材料层，其掺杂浓度可以为2×10 19cm -3；所述第一缓冲层17的材料为Ge或者SiGe；所述第二缓冲层18的材料可以为Ge或者SiGe。所述器件结构还包括位于所述下接触层12表面的N-电极16、位于所述上接触14表面的P-电极15。所述N-电极16与所述P-电极15的材料可以是但不限于金属铝。
不仅如此，本具体实施方式还提供了一种波导型GePb红外光电探测器的制造方法，附图3是本发明具体实施方式中波导型GePb红外光电探测器的制造方法流程图，附图4A-4F是本具体实施方式在制造波导型GePb红外光电探测器过程中的主要工艺截面示意图，本具体实施方式制造的波导型GePb红外光电探测器的结构可参见图1、图2。如图1-图3、图4A-图4F所示，本具体实施方式提供的波导型GePb红外光电探测器的制造方法，包括如下步骤：
步骤S31，提供硅衬底。
步骤S32，形成波导层11于所述硅衬底表面，如图4B所示。
优选的，所述硅衬底包括沿其轴向方向依次叠置的底层硅20、埋氧化层21和顶层硅22，如图4A所示；形成波导层11于所述硅衬底表面的具体步骤包括：
刻蚀所述顶层硅22，形成所述波导层11、并于所述顶层硅22中定义出器件区域40，如图4B所示。
具体来说，可以采用光刻及干法刻蚀工艺对所述硅衬底中的所述顶层硅22进行刻蚀，形成所述波导层11，并在所述顶层硅22中定义出器件区域40。其中，所述器件区域40的宽度大于所述波导层11的宽度，例如所述波导层11的宽度为500nm、所述器件区域40的宽度为10μm。
步骤S33，形成器件结构于所述硅衬底表面，所述器件结构包括沿垂直于所述硅衬底的方向依次叠置的下接触层12、吸收层13和上接触层14，所述吸收层13的材料为Ge 1-xPb x，其中，0<x<1；所述波导层11中的光信号通过倏逝波耦合进入所述器件结构，如图2、图4F所示。
优选的，形成器件结构于所述硅衬底表面的具体步骤包括：
于所述器件区域40注入第一掺杂离子，形成所述下接触层12；
形成第一缓冲层17于所述下接触层12表面；
形成吸收层13于所述第一缓冲层17表面；
形成第二缓冲层18于所述吸收层13表面；
形成上接触层14于所述第二缓冲层18表面。
优选的，形成吸收层13于所述下接触层12表面的具体步骤包括：
沉积Ge材料于所述下接触层12表面，形成预吸收层41，如图4C所示；
自所述预吸收层背离所述下接触层的表面注入Pb离子，形成材料为Ge 1-xPb x的吸收层13。
以下以所述第一掺杂离子为N-型离子、第二掺杂离子为P-型离子为例进行说明。具体来说，在所述顶层硅22中定义出所述器件区域40后，首先采用光刻工艺于所述器件区域40中定义所述下接触层12的范围，然后采用离子注入及高温退火的方法，形成所述下接触层12。其中，所述下接触层12中所述第一掺杂离子的掺杂浓度为2×10 19cm -3。然后，采用化学气相沉积、物理气相沉积或者原子层沉积等方式于所述下接触层12表面沉积Ge材料或者SiGe材料，形成所述第一缓冲层17。之后，采用二氧化硅硬掩模于所述第一缓冲层17背离所述下接触层12的表面定义吸收区，并采用化学气相沉积的方法于所述吸收区外延生长所述Ge材料，形成所述预吸收层41，如图4C所示。
接着，自所述预吸收层41背离所述下接触层12的表面注入Pb离子，并进行激光退火，形成材料为Ge 1-xPb x的吸收层13，如图4D所示。其中，Pb离子的注入剂量可以为6×10 15cm -2、注入能量为40keV；注入之后采用248nm准分子激光器进行退火处理，激光脉冲宽度与数量分别为23ns和5次，激光能量密度为400mJ/cm 2。
然后，于所述吸收层13背离所述第一缓冲层17的表面沉积Ge材料或者SiGe材料，形成所述第二缓冲层18；最后，于所述第二缓冲层18表面选择性外延生长P-型Ge材料，形成所述上接触层14，如图4E所示。其中，所述上接触层14中P-型离子的掺杂浓度可以为2×10 19cm -3。
之后，于所述上接触层14以及所述下接触层12表面沉积钝化材料，形成减反层；并采用光刻及干法刻蚀工艺对所述减反层进行刻蚀，形成暴露所述下接触层12的N-电极沟槽和暴露所述上接触层14的P-电极沟槽；最后，采用磁控溅射等工艺分别沉积金属材料于所述N-电极沟槽和所述P-电极沟槽，形 成N-电极16和P-电极15，如图4F所示。其中，所述金属材料可以是但不限于金属铝。
为了使得探测器具有较宽的探测范围，例如使得所述红外光电探测器的探测范围延伸至3μm以上，以适应于不同的探测需求，优选的，0.001<x<0.02。
本具体实施方式波导型GePb红外光电探测器及其制造方法，通过在器件结构的吸收层中设置Ge 1-xPb x材料，使得光电探测器在短波红外到中波红外波段都能实现高效吸收。与Ⅲ-Ⅴ族红外光电探测器相比，容易与Si集成；与现有的Ge光电探测器相比，具有更广的探测范围；与垂直入射型光电探测器相比，更容易与其他光有源或无源器件集成，且拥有更高的探测灵敏度。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (10)

  1. 一种波导型GePb红外光电探测器，其特征在于，包括硅衬底以及均位于所述硅衬底表面的波导层和器件结构；所述器件结构包括沿垂直于所述硅衬底的方向依次叠置的下接触层、吸收层和上接触层，所述吸收层的材料为Ge 1-xPb x，其中，0<x<1；所述波导层中的光信号通过倏逝波耦合进入所述器件结构。
  2. 根据权利要求1所述的波导型GePb红外光电探测器，其特征在于，所述器件结构还包括：
    位于所述下接触层与所述吸收层之间的第一缓冲层；
    位于所述吸收层与所述上接触层之间的第二缓冲层。
  3. 根据权利要求2所述的波导型GePb红外光电探测器，其特征在于，所述第一缓冲层与所述第二缓冲层的材料均为Ge或者SiGe。
  4. 根据权利要求1所述的波导型GePb红外光电探测器，其特征在于，所述波导层的材料为硅；所述下接触层的材料为具有第一掺杂离子的硅材料；所述上接触层的材料为具有第二掺杂离子的Ge材料，且所述第二掺杂离子与所述第一掺杂离子的导电类型相反。
  5. 根据权利要求1所述的波导型GePb红外光电探测器，其特征在于，0.001<x<0.02。
  6. 一种波导型GePb红外光电探测器的制造方法，其特征在于，包括如下步骤：
    提供硅衬底；
    形成波导层于所述硅衬底表面；
    形成器件结构于所述硅衬底表面，所述器件结构包括沿垂直于所述硅衬底的方向依次叠置的下接触层、吸收层和上接触层，所述吸收层的材料为Ge 1-xPb x，其中，0<x<1；所述波导层中的光信号通过倏逝波耦合进入所述器件结构。
  7. 根据权利要求6所述的波导型GePb红外光电探测器的制造方法，其特征在于，所述硅衬底包括沿其轴向方向依次叠置的底层硅、埋氧化层和顶层硅；
    形成波导层于所述硅衬底表面的具体步骤包括：
    刻蚀所述顶层硅，形成所述波导层、并于所述顶层硅中定义出器件区域。
  8. 根据权利要求7所述的波导型GePb红外光电探测器的制造方法，其特征在于，形成器件结构于所述硅衬底表面的具体步骤包括：
    于所述器件区域注入第一掺杂离子，形成所述下接触层；
    形成第一缓冲层于所述下接触表面；
    形成吸收层于所述第一缓冲层表面；
    形成第二缓冲层于所述吸收层表面；
    形成上接触层于所述第二缓冲层表面。
  9. 根据权利要求8所述的波导型GePb红外光电探测器的制造方法，其特征在于，形成吸收层于所述下接触层表面的具体步骤包括：
    沉积Ge材料于所述下接触层表面，形成预吸收层；
    自所述预吸收层背离所述下接触层的表面注入Pb离子，形成材料为Ge 1-xPb x的所述吸收层。
  10. 根据权利要求6所述的波导型GePb红外光电探测器的制造方法，其特征在于，0.001<x<0.02。
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