WO2020191750A1 - Oscillateur à cristal et son procédé de fabrication et son appareil - Google Patents

Oscillateur à cristal et son procédé de fabrication et son appareil Download PDF

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Publication number
WO2020191750A1
WO2020191750A1 PCT/CN2019/080214 CN2019080214W WO2020191750A1 WO 2020191750 A1 WO2020191750 A1 WO 2020191750A1 CN 2019080214 W CN2019080214 W CN 2019080214W WO 2020191750 A1 WO2020191750 A1 WO 2020191750A1
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WIPO (PCT)
Prior art keywords
layer
excitation electrode
crystal oscillator
silicon
crystal
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PCT/CN2019/080214
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English (en)
Chinese (zh)
Inventor
王红超
沈健
王文轩
李运宁
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深圳市汇顶科技股份有限公司
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Application filed by 深圳市汇顶科技股份有限公司 filed Critical 深圳市汇顶科技股份有限公司
Priority to PCT/CN2019/080214 priority Critical patent/WO2020191750A1/fr
Priority to CN201980000483.6A priority patent/CN110114971A/zh
Publication of WO2020191750A1 publication Critical patent/WO2020191750A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/022—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the cantilever type

Definitions

  • This application relates to the field of oscillator technology, and in particular to a crystal oscillator and its manufacturing method and equipment.
  • Oscillator is an energy conversion device that converts DC power into AC power with a certain frequency.
  • the circuit composed of it is called an oscillator circuit.
  • the oscillator is mainly divided into RC oscillator, LC oscillator and crystal oscillator.
  • a crystal oscillator is an electronic component that uses the piezoelectric properties of a quartz crystal to produce high-precision oscillation frequencies under the action of an external alternating signal.
  • Chip coating silver layers on its two corresponding surfaces as electrodes, soldering an electrode material on each electrode to the pin, and adding a package shell to form a quartz crystal resonator, referred to as Quartz crystal or crystal, crystal oscillator,
  • the core component of the quartz crystal oscillator is the quartz crystal oscillator.
  • the quartz crystal oscillator is composed of an upper excitation electrode, a quartz wafer and a lower electrode.
  • the traditional crystal oscillator process is to use the wafer to cut and select the frequency separately, and then produce silver paste electrodes on the upper and lower surfaces of the wafer. ,
  • the chip and the peripheral circuit are connected and fixed through the mounting process.
  • the size of the crystal oscillator device is often larger, which leads to higher power consumption. At the same time, the larger appearance size has become less and less suitable for mobile terminals. The need for miniaturization.
  • the present application provides a crystal oscillator and a manufacturing method and equipment thereof, which achieves the purpose of a small size of the crystal oscillator, improves the processing accuracy of the crystal oscillator, and solves the problem that the existing crystal oscillator is large in size and cannot meet the requirements of moving The problem of terminal miniaturization requirements.
  • This application provides a crystal oscillator, including:
  • a silicon-based substrate and a crystal oscillator and the silicon-based substrate is provided with a cavity structure for the crystal oscillator to vibrate, and the crystal oscillator is suspended above the cavity structure, wherein the crystal oscillator It includes a first excitation electrode, a crystal layer and a second excitation electrode that are stacked.
  • a functional layer is provided on the silicon-based substrate, a release groove communicating with the cavity structure is opened on the functional layer, and the release groove connects the functional layer It is divided into a crystal oscillator located on the cavity structure and an edge functional layer located on the silicon-based substrate and connected with the crystal oscillator.
  • the crystal oscillator and the edge function layer are connected by at least one cantilever, so that the crystal oscillator is suspended above the cavity structure.
  • the crystal layer and the edge functional layer are connected by a cantilever, and the first excitation electrode and the second excitation electrode are respectively along the cantilever. It is connected to the corresponding electrode on the edge functional layer.
  • the first excitation electrode and the edge functional layer are connected by a first cantilever
  • the second excitation electrode and the edge function layer are connected by a second cantilever.
  • the first cantilever and the second cantilever are respectively located at opposite ends of the crystal oscillator.
  • the first cantilever and the second cantilever are respectively located at two adjacent ends of the crystal oscillator.
  • the edge functional layer has a contact hole electrically connected to the first excitation electrode and a spacer block electrically connected to the second excitation electrode.
  • the projected area of the first excitation electrode and the second excitation electrode on the crystal layer is smaller than that of the crystal layer facing the first excitation electrode or the first excitation electrode. 2. The area of one side of the excitation electrode.
  • it further includes a planarization layer, the top surface of the planarization layer is flush with the top surface of the first excitation electrode.
  • the first insulating layer is used to at least insulate between the first excitation electrode and the silicon-based substrate.
  • a second insulating layer located between the crystal layer and the second excitation electrode.
  • the silicon-based substrate is made of any one of the following substrates:
  • Monocrystalline silicon wafers Monocrystalline silicon wafers, polycrystalline silicon wafers, silicon-on-insulator (SOI) substrates.
  • SOI silicon-on-insulator
  • the silicon-based substrate is an SOI substrate
  • the SOI substrate includes a support layer, a buried oxygen layer, and a silicon layer stacked in sequence, and the cavity structure is opened in On the silicon layer, and the bottom wall of the cavity structure extends to the buried oxide layer.
  • the silicon-based substrate is a silicon wafer
  • the cavity structure penetrates the top surface and the bottom surface of the silicon wafer
  • the silicon wafer is provided with the
  • the functional layer is provided with a sealing layer for sealing one end of the cavity structure on the other side.
  • the cross-sectional shape of the cavity structure is rectangular or trapezoidal.
  • the material of the crystal layer includes any one of the following:
  • the material of the first excitation electrode is Ag, Au, Al or heavily doped single crystal or polycrystalline silicon material
  • the material of the second excitation electrode is Ag, Au, Al or heavily doped single crystal or polycrystalline silicon material.
  • the application also provides a device, which at least includes the crystal oscillator described in any one of the above.
  • the application also provides a method for manufacturing a crystal oscillator, the method including:
  • the substrate includes a support layer, a buried oxygen layer and a silicon layer stacked in sequence;
  • a cavity structure connected to the release groove is formed on the silicon layer, so that the functional layer is divided by the release groove into a crystal oscillator suspended above the cavity structure and on the substrate And the edge function layer connected with the crystal oscillator, wherein the contact hole is located on the edge function layer.
  • the forming a functional layer on the silicon layer includes:
  • a second excitation electrode is formed on the crystal layer.
  • the method further includes:
  • the crystal layer is formed on the planarization layer and the first excitation electrode.
  • the method further includes:
  • the second excitation electrode is formed on the second insulating layer.
  • the application also provides a method for manufacturing a crystal oscillator, the method including:
  • the silicon wafer including a front side and a back side;
  • a sealing layer for sealing one end of the cavity structure is arranged on the back of the silicon wafer;
  • At least a part of the insulating layer corresponding to the first release groove is provided with a second release groove communicating with the first release groove, so that the cavity structure is formed with the first excitation electrode , The crystal layer and the crystal oscillator of the second excitation electrode.
  • the method further includes:
  • the thickness of the crystal layer is thinned.
  • the forming the first excitation electrode on the front surface of the silicon wafer includes:
  • P-type doping is injected into the front surface of the silicon wafer to form a first excitation electrode composed of a heavily doped silicon conductive layer.
  • the crystal oscillator provided in this embodiment includes a silicon-based substrate and a crystal oscillator, and the silicon-based substrate is provided with a cavity structure for the crystal oscillator to vibrate, and the crystal oscillator is suspended in the cavity.
  • a semiconductor process can be used to form the crystal oscillator on the silicon-based substrate.
  • the semiconductor process can be used to form the silicon-based substrate.
  • the cavity structure of the crystal oscillator vibration because the semiconductor process can be used, so that the size of the final crystal oscillator is smaller, and the processing accuracy of the crystal oscillator is higher when the semiconductor process is used, and the performance of the crystal oscillator is better.
  • the crystal oscillator is suspended above the cavity structure, which improves the mechanical quality factor of the crystal oscillator. Therefore, the crystal oscillator provided in this embodiment achieves the purpose of small size of the crystal oscillator and high process precision, thereby It solves the problem that the existing crystal oscillator is large in size and cannot meet the miniaturization requirements of mobile terminals.
  • FIG. 1A is a schematic top view of the structure of the crystal oscillator provided in the first embodiment of the application;
  • FIG. 1B is a schematic diagram of a cross-sectional structure of a crystal oscillator provided in Embodiment 1 of the application;
  • 2A is a schematic top view of the structure of the crystal oscillator provided in the second embodiment of the application.
  • 2B is a schematic cross-sectional structure diagram of the crystal oscillator provided in the second embodiment of the application.
  • FIG. 3 is a schematic flowchart of a method for manufacturing a crystal oscillator according to Embodiment 4 of the application;
  • 4A-4F are schematic cross-sectional views of the mechanism prepared in each step of the method for manufacturing a crystal oscillator provided in the fourth embodiment of the application;
  • FIG. 5 is a schematic flowchart of a method for manufacturing a crystal oscillator according to Embodiment 5 of the application;
  • 6A-6K are schematic cross-sectional structural diagrams of structures prepared in each step of the crystal oscillator manufacturing method provided in Embodiment 5 of the application.
  • 431b-second cantilever 101-cavity structure; 102-release groove; 102a-first release groove;
  • the quartz crystal oscillator has the problem of large size.
  • the inventor found that the reason for this problem is that after the existing quartz crystal oscillator uses the chip to cut the frequency separately, Silver paste electrodes are made on the upper and lower surfaces of the wafer, and the wafer and the peripheral circuit are connected and fixed through the mounting process.
  • the size of the crystal oscillator device is often larger, which leads to higher power consumption.
  • the larger appearance size has been It is increasingly unable to meet the demand for miniaturization of mobile terminals.
  • the present invention provides a crystal oscillator.
  • the crystal oscillator provided in the present application will be described with reference to multiple embodiments as follows.
  • FIG. 1A is a schematic diagram of a top view structure of a crystal oscillator provided in Embodiment 1 of the application
  • FIG. 1B is a schematic diagram of a cross-sectional structure of a crystal oscillator provided in Embodiment 1 of the application.
  • the crystal oscillator includes: a silicon-based substrate 10 and a crystal oscillator 40, and the silicon-based substrate 10 is provided with a cavity structure 101 for the crystal oscillator 40 to vibrate, and the crystal oscillator 40 is suspended in the air.
  • the crystal oscillator 40 is located above the cavity structure 101, and the crystal oscillator 40 can vibrate at the cavity structure 101. Specifically, as shown in FIGS.
  • the crystal The oscillator 40 is arranged above the cavity structure 101, and there is a gap between the outer edge of the crystal oscillator 40 and the inner wall of the cavity structure 101 (that is, the projection area of the crystal oscillator 40 on the cavity structure 101 is smaller than the opening of the cavity structure 101 Area), so as to ensure that the crystal oscillator 40 can vibrate at the cavity structure 101 under the action of a voltage.
  • the crystal oscillator 40 includes a first excitation electrode 41, a crystal layer 43 and a second excitation electrode 42, which are arranged in a stack. When an excitation electrode 41 and a second excitation electrode 42 are applied with a voltage, the crystal layer 43 has a piezoelectric effect under the action of the voltage.
  • the crystal layer 43 is specifically made of crystal material, specifically quartz crystal or PMN -Piezoelectric crystal materials such as PT or sapphire, but compared with existing quartz crystal oscillators, in this embodiment, the crystal oscillator 40 is specifically arranged on the cavity structure 101 of the silicon-based substrate 10, that is, a silicon-based lining is used
  • the base 10 is used as the base of the crystal oscillator 40, and when a silicon-based substrate 10 is used, a standard semiconductor process can be used to form the crystal oscillator at this time. That is, in this embodiment, the crystal oscillator can be formed by a semiconductor process on the silicon-based substrate.
  • the crystal oscillator 40 and the cavity structure 101 for the crystal oscillator 40 to vibrate are formed on the 10, and when the semiconductor process is used, the size of the crystal oscillator composed of the crystal oscillator 40 and the silicon-based substrate 10 tends to be small, but now When manufacturing quartz crystal oscillators in existing technologies, traditional processes such as cutting, polishing, and bonding are often used to manufacture quartz crystal oscillators. However, the crystal oscillators produced are large in size and have low processing accuracy.
  • the traditional The combination of crystal technology and semiconductor technology such as Micro-Electro-Mechanical System (MEMS)
  • MEMS Micro-Electro-Mechanical System
  • the crystal oscillator provided in this embodiment is measured, and the size of the crystal oscillator can reach 1.5mm, while the size of the quartz crystal oscillator in the prior art is 4-5mm, so the crystal oscillator provided in this embodiment The size of the crystal oscillator is greatly reduced, and the purpose of the small size of the crystal oscillator is realized, thereby meeting the needs of miniaturization of the terminal.
  • the silicon-based substrate 10 may specifically be a single crystal silicon wafer, a polycrystalline silicon wafer, or a Silicon-On-Insulator (SOI) substrate.
  • SOI Silicon-On-Insulator
  • the silicon-based substrate 10 when the silicon-based substrate 10 is provided with the cavity structure 101, specifically, it is formed by an etching process, for example, a dry etching process or a wet etching process may be used.
  • an etching process for example, a dry etching process or a wet etching process may be used.
  • one end of the crystal oscillator 40 may be connected to the silicon-based substrate 10, and the crystal oscillator 40 is connected to the silicon-based substrate 10
  • the width of the connected end of the bottom 10 is smaller than the rest of the crystal oscillator 40, which facilitates the vibration of the crystal oscillator 40.
  • the crystal layer 43 can be made of quartz, lead magnesium niobate (PMN-PT) or sapphire crystal.
  • the quartz crystal can be made Use AT cutting or SC cutting. It should be noted that when the crystal layer 43 uses a quartz crystal, at this time, the crystal oscillator composed of the silicon-based substrate 10 and the crystal oscillator 40 has a higher quality factor (ie Q value).
  • silicon-based crystal oscillators ie, MEMS silicon-based crystal oscillators manufactured by MEMS technology are made of monocrystalline silicon wafers, and the mechanical constants of silicon materials and the principle of electrostatic oscillation make the manufactured MEMS silicon-based crystal oscillators
  • the quality factor ie Q value
  • the crystal oscillator provided in this embodiment not only realizes the small size of the crystal oscillator, but also when the crystal layer 43 adopts When crystal, the purpose of high Q value of crystal oscillator is realized.
  • the crystal oscillator provided by this embodiment includes a silicon-based substrate 10 and a crystal oscillator 40, and the silicon-based substrate 10 is provided with a cavity structure 101 for the crystal oscillator 40 to vibrate, and the crystal oscillator 40 is suspended in the air.
  • the crystal oscillator 40 can be formed on the silicon-based substrate 10 by a semiconductor process, and at the same time, the silicon-based substrate can be formed by a semiconductor process.
  • a cavity structure 101 capable of vibrating the crystal oscillator 40 is formed on the base 10.
  • the crystal oscillator finally produced in this embodiment has a smaller size and adopts The semiconductor process makes the processing accuracy of the crystal oscillator higher, and the performance of the crystal oscillator is better, and the crystal oscillator 40 is suspended on the cavity structure 101, which improves the mechanical quality factor of the crystal oscillator 40. Therefore, this embodiment
  • the crystal oscillator provided in the example achieves the purpose of small size of the crystal oscillator and high processing precision, thereby solving the problem of the large size of the existing crystal oscillator that cannot meet the miniaturization requirements of mobile terminals.
  • the silicon-based substrate 10 when the crystal oscillator 40 is suspended above the cavity structure 101 of the silicon-based substrate 10, specifically, the silicon-based substrate 10 is provided with a functional layer 401 ( 4D), the functional layer 401 is provided with a release groove 102 communicating with the cavity structure 101 (as shown in FIG. 1A), that is, the release groove 102 is connected to the cavity structure 101, and the release groove 102 connects the functional layer 401 It is divided into a crystal oscillator 40 located on the cavity structure 101 and an edge functional layer located on the silicon-based substrate 10 and connected to the crystal oscillator 40. That is, in this embodiment, a functional layer 401 is provided on the silicon-based substrate 10.
  • the functional layer 401 is divided into two parts by the release groove 102, one part is an intermediate functional layer suspended above the cavity structure 101, and the other part is an edge functional layer on the silicon-based substrate 10 (that is, the area outside the release groove)
  • the intermediate functional layer serves as the crystal oscillator 40
  • the intermediate functional layer includes the first excitation electrode 41, the crystal layer 43 and the second excitation electrode 42, so that this part of the functional layer forms the crystal oscillator 40
  • the edge functional layer that is, the release groove 102 is a non-closed annular groove
  • the crystal oscillator 40 There is a connection area with the edge functional layer, and the connection area needs to ensure that the crystal oscillator 40 can vibrate under voltage.
  • the size of the first excitation electrode 41 and the second excitation electrode 42 in the crystal oscillator 40 can be the same as the size of the crystal layer 43, that is, the first excitation electrode 41 and the second excitation electrode 42 separate the crystal layer 43 Both surfaces are covered, or in this embodiment, the area of the first excitation electrode 41 and the second excitation electrode 42 may be smaller than the area of the crystal layer 43.
  • the edge functional layer includes the crystal layer 43a, this Specifically, the edge functional layer and the silicon-based substrate 10 may be bonded to the silicon-based substrate 10 through a fusion bonding process or a resin gluing process.
  • a functional layer 401 is provided on the silicon-based substrate 10.
  • the functional layer 401 may be provided with a plurality of release grooves 102. Accordingly, the silicon-based substrate 10
  • Multiple cavity structures 101 can be formed on the silicon-based substrate 10, that is, multiple crystal oscillators 40 are formed on the silicon-based substrate 10, and finally multiple crystal oscillators are manufactured at a time.
  • the functional layer 401 contains the crystal layer 43
  • the crystal layer 43 When a quartz wafer is used, since the size of the quartz wafer is difficult to be large, it is specifically possible to form a large-sized quartz wafer in the form of bonding and splicing multiple quartz wafers, and then set the quartz wafer on the silicon base substrate 10 to A plurality of crystal oscillators 40 are formed.
  • the opening of the release groove 102 allows the functional layer 401 to separate the crystal oscillator 40, which forms the shape of the crystal oscillator 40.
  • the release groove 102 102 etch the silicon-based substrate 10 to form a cavity structure 101, that is, the release groove 102 serves as a release channel for the material removal process at the cavity structure 101 on the silicon-based substrate 10.
  • the edge functional layer may also include a first excitation electrode 41, a crystal layer 43, and a second excitation electrode 42, that is, the edge function layer also has a first excitation electrode 41, a crystal layer 43, and a second excitation electrode 42, and the edge
  • the first excitation electrode 41 and the second excitation electrode 42 in the functional layer are electrically connected to the first excitation electrode 41 and the second excitation electrode 41 in the crystal oscillator 40, so that the first excitation electrode and the second excitation electrode 42 in the crystal oscillator 40 can be
  • the first excitation electrode 41 and the second excitation electrode 42 in the edge function layer are connected to an external power source, or in this embodiment, the composition in the edge function layer and the composition of the crystal oscillator 40 may be different, for example, in the edge function
  • the crystal oscillator 40 and the edge functional layer are connected by at least one cantilever 431, so that the crystal oscillator 40 is suspended above the cavity structure 101, that is, in this embodiment
  • the crystal oscillator 40 and the edge functional layer are connected by at least one cantilever 431.
  • the cantilever 431 may be metal or silicon, or the material of the cantilever 431 is the same as that of the crystal layer 43.
  • the crystal oscillator 40 is suspended on the cavity structure 101 by the cantilever 431. When the crystal oscillator 40 vibrates, the cantilever 431 can move up and down with the vibration of the crystal oscillator 40.
  • the width of the cantilever 431 is smaller than the width of the crystal oscillator 40, which ensures the normal vibration of the crystal oscillator 40.
  • the crystal oscillator 40 and the edge functional layer can be connected by a cantilever 431 (as shown in FIG. 1A), or in this embodiment, the crystal oscillator 40 and the edge functional layer can also be connected by two Two cantilevers 431 are connected (as shown in Figure 2A).
  • the crystal layer 43 and the edge functional layer are connected by a cantilever 431, and in this embodiment, the cantilever 431 is specifically formed integrally with the crystal layer 43, namely When the release groove 102 is opened, the crystal layer 43 in the crystal oscillator 40 and the crystal layer 43 in the edge functional layer are not completely disconnected. This part of the crystal layer 43 serves as the cantilever 431.
  • the first excitation in the crystal oscillator 40 The electrode 41 and the second excitation electrode 42 are respectively connected to the corresponding electrodes on the edge functional layer along the cantilever 431, that is, the first excitation electrode 41 and the second excitation electrode 42 extend along the cantilever 431 to the edge functional layer, so that the first The excitation electrode 41 and the second excitation electrode 42 are led out along the same side of the crystal oscillator 40, and the crystal oscillator 40 is connected to an external circuit through the corresponding electrode on the edge functional layer.
  • this embodiment In the edge function layer, there are contact holes 411 electrically connected to the first excitation electrode 41 and a spacer block electrically connected to the second excitation electrode 42. That is, in this embodiment, the spacer block on the edge function layer and the second excitation electrode 42 is electrically connected.
  • the contact hole 411 on the edge functional layer is electrically connected to the first excitation electrode 41. Specifically, the contact hole 411 is in contact and connected with the pad 412 (see FIG.
  • the edge functional layer is provided on the edge functional layer, and the pad 412 is connected to The first excitation electrode 41 is electrically connected, or in this embodiment, the pad 412 is exposed at the contact hole 411, so that the external circuit is connected to the first excitation electrode 41 and the second excitation electrode by connecting with the pad and the contact hole 411 42 is electrically connected.
  • the edge function layer is opened with the first The contact hole 411 electrically connected to the excitation electrode 41 exposes the first excitation electrode 41 on the edge functional layer.
  • the edge function layer is electrically connected to the second excitation electrode 42.
  • the contact hole 411 is connected, and the pad is electrically connected to the first excitation electrode 41 at this time.
  • the pad and the first excitation electrode 41 can be electrically connected through the first cantilever 431a or the electrode material.
  • 411 and the second excitation electrode 42 may be electrically connected by the second cantilever 431 or electrode material.
  • the functional layer 401 when a functional layer 401 is provided on a silicon-based substrate, the functional layer 401 may specifically include a crystal layer 43b (see FIG. 4C), and a first excitation electrode 41 and a second excitation electrode 41 on the front and back of the crystal layer 43b.
  • Two excitation electrodes 42, and the projected area of the first excitation electrode 41 and the second excitation electrode 42 on the crystal layer 43b is smaller than the area of the crystal layer 43b facing the first excitation electrode 41 or the second excitation electrode 42, that is, the first The excitation electrode 41 and the second excitation electrode 42 are patterned on the crystal layer 43.
  • the first excitation electrode 41 and the second excitation electrode 42 can be arranged only in the area where the crystal oscillator 40 is formed.
  • the functional layer 401 is provided on the silicon-based substrate 10, when the area of the first excitation electrode 41 is smaller than the area of the crystal layer 43b, There is a gap between the crystal layer 43 and the silicon-based substrate 10 in the region where the first excitation electrode 41 is not provided. For this reason, in this embodiment, it further includes a planarization layer 30. The top surface of the planarization layer 30 and the first excitation The top surface of the electrode 41 is flush. Specifically, when the first excitation electrode 41 is provided on the silicon-based substrate 10, a planarization layer 30 is provided on the silicon-based substrate 10 at the same time, so that the crystal layer 43 and the silicon-based substrate The interface between the bottom 10 is flat.
  • a first insulating layer 21 can be directly provided on the silicon-based substrate 10.
  • a first insulating layer 21 is provided on the side of the first excitation electrode 41 facing the cavity structure 101.
  • the silicon-based substrate 10 and the planarization layer A first insulating layer 21 is also provided between 30.
  • it further includes: a second insulating layer 22, the second insulating layer 22 is located between the crystal layer 43 and the second excitation electrode 42, when the second insulating layer 22 is provided on the crystal layer 43, the second excitation electrode 42 is located on the second insulating layer 22, where, in this embodiment, the second excitation electrode 42 can also be directly coated on the surface of the crystal layer 43, that is, in this embodiment, it may not be
  • the first insulating layer 21 and the second insulating layer 22 are provided.
  • the arrangement of the first insulating layer 21 and the second insulating layer 22 is more conducive to the processing requirements of the first excitation electrode 41 and the second excitation electrode 42.
  • the material of the first insulating layer 21 and the second insulating layer 22 may specifically be SiO 2 , SiN, or other materials.
  • the silicon-based substrate 10 may be a single crystal silicon wafer, a polycrystalline silicon wafer or an SOI substrate.
  • the silicon-based substrate 10 is an SOI substrate.
  • the substrate, and the SOI substrate includes a support layer 13, a buried oxygen layer 12, and a silicon layer 11 stacked in sequence.
  • the cavity structure 101 is opened on the silicon layer 11, and the bottom wall of the cavity structure 101 extends to the buried oxygen layer 12.
  • the material of the support layer 13 may specifically be Si or silicon oxide
  • a buried oxide layer 12 is embodied as SiO 2, which, in this embodiment, the thickness of the silicon layer 11 may be 5um ⁇ 20um, a buried oxide
  • the thickness of the layer 12 can be ⁇ 1um
  • the thickness of the support layer 13 can be 300-700um.
  • the buried oxygen layer 12 plays a limiting role in the formation of the cavity structure 101, that is, when the etching depth reaches the buried oxygen When the layer 12 is reached, the etching is stopped at this time, and a cavity structure 101 is formed on the silicon layer 11.
  • the silicon-based substrate 10 is a silicon wafer (as shown in FIG. 6A), and the cavity structure 101 penetrates the top and bottom surfaces of the silicon wafer (as shown in FIG. 6F), that is, on the silicon A through hole is formed on the wafer.
  • One surface of the silicon wafer is provided with a functional layer 401, and the other surface is provided with a sealing layer 111 for sealing one end of the cavity structure 101.
  • the specific structure can be referred to as shown in FIG. 2B below.
  • the cross-sectional shape of the cavity structure 101 may be rectangular (as shown in FIG. 1B), or trapezoidal (as shown in FIG. 2B), or in this embodiment, the cavity structure
  • the cross-sectional shape of 101 may also be other shapes.
  • the material of the crystal layer 43 may be quartz, lead magnesium niobate (PMN-PT) or sapphire crystal, where, when the material of the crystal layer 43 is PMN-PT or sapphire crystal, And when fusion bonding is used between the silicon-based substrate 10 and the crystalline layer 43, at this time, a layer of silicon oxide is first deposited on the interface between the silicon-based substrate 10 and the crystalline layer 43, which is convenient for the silicon-based substrate 10 and The crystalline layer 43 is bonded.
  • the silicon oxide layer 11 can be used as a planarization layer 30 or an insulating layer.
  • the material of the first excitation electrode 41 may be Ag, Au, AI or heavily doped single crystal or polysilicon material
  • the material of the second excitation electrode 42 may be Ag, Au, AI or heavily doped single crystal. Crystal or polysilicon material.
  • the shape of the crystal oscillator 40 includes but is not limited to a circle, a square, or an ellipse, and may also be other regular or irregular shapes.
  • FIG. 2A is a schematic top view of the structure of the crystal oscillator provided in the second embodiment of the application
  • FIG. 2B is a schematic cross-sectional structure of the crystal oscillator provided in the second embodiment of the application.
  • the first excitation electrode 41 and the edge function layer are connected through a first cantilever 431a
  • the second excitation electrode 42 and the edge function layer are connected through a second cantilever 431b, as shown in FIG. 2B
  • the crystal layer 43 in the crystal oscillator 40 is completely disconnected from the edge functional layer.
  • the crystal oscillator 40 is connected to the edge functional layer through the first cantilever 431a and the second cantilever 431b to realize that the crystal oscillator 40 is suspended in the air.
  • the first cantilever 431a is specifically an extension of the first excitation electrode 41
  • the second cantilever 431b is specifically an extension of the second excitation electrode 42, that is, a release is formed on the functional layer 401
  • the release groove 102 disconnects the crystal layer 43 from the edge function layer, but the first excitation electrode 41 and the second excitation electrode 42 are not completely disconnected from the edge function layer, thereby forming the first cantilever 431a and the first cantilever
  • the two cantilevers 431b, or in this embodiment, the first cantilever 431a and the second cantilever 431b may be metal cantilevers 431 connected to the first excitation electrode 41 and the second excitation electrode 42.
  • the first cantilever 431a and The second cantilever 431b not only suspends the crystal oscillator 40 on the cavity structure 101, at the same time, the first cantilever 431a and the second cantilever 431b lead the first excitation electrode 41 and the second excitation electrode 42 of the crystal oscillator 40 to the edge functional layer.
  • the pins corresponding to the first excitation electrode 41 and the second excitation electrode 42 are formed on the edge functional layer, so as to facilitate the connection between the crystal oscillator 40 and the peripheral circuit.
  • the first cantilever 431a and the second cantilever 431b are respectively located at opposite ends of the crystal oscillator 40, for example, the first cantilever 431a is located on the left side of the crystal oscillator 40 ,
  • the second cantilever 431b is located on the right side of the crystal oscillator 40, that is, the first excitation electrode 41 and the second excitation electrode 42 are respectively drawn out on both sides of the crystal oscillator 40, or in this embodiment, the first cantilever 431a and the second cantilever 431b are located at two adjacent ends of the crystal oscillator 40, for example, the first cantilever 431a is located on the left side of the crystal oscillator 40, and the second cantilever 431b is located behind or in front of the crystal oscillator 40.
  • the spacer and the contact hole 411 are correspondingly located at the two ends of the edge functional layer.
  • the silicon-based substrate 10 is a silicon wafer, and the cavity structure 101 penetrates the top and bottom surfaces of the silicon wafer, that is, through holes are formed on the silicon wafer, and one side of the silicon wafer A functional layer 401 is provided on the upper surface, and a sealing layer 111 for sealing one end of the cavity structure 101 is provided on the other surface, or in this embodiment, the silicon-based substrate 10 may also be an SOI substrate.
  • the silicon-based substrate 10 may also be an SOI substrate.
  • This embodiment provides a device that includes at least the crystal oscillator of any of the above embodiments.
  • the device may specifically be a smart phone, a notebook computer, a wearable device, a household appliance, an access control system, etc., which has the crystal oscillator described above.
  • the device may also be a control module or a control device including the above-mentioned crystal oscillator.
  • the device provided in this embodiment includes the above crystal oscillator, and the crystal oscillator includes a silicon-based substrate 10 and a crystal oscillator 40, and the silicon-based substrate 10 is provided with a cavity structure 101 for the crystal oscillator 40 to vibrate.
  • the oscillator 40 is suspended on the cavity structure 101, so that during the manufacturing process of the crystal oscillator, a semiconductor process can be used to form the crystal oscillator 40 on the silicon-based substrate 10, and the crystal oscillator 40 is located in the cavity of the silicon-based substrate 10.
  • the size of the crystal oscillator is finally made smaller, and the processing accuracy of the crystal oscillator is higher when the semiconductor process is used, and the performance of the crystal oscillator is better, and the crystal oscillator 40 is suspended in the cavity structure.
  • the mechanical quality factor of the crystal oscillator 40 is improved. Therefore, the space occupied by the crystal oscillator in the device provided by this embodiment is reduced, thereby miniaturizing the device area, thereby solving the problem of the large size of the existing terminal equipment. The problem of miniaturization of the terminal can not be achieved by the crystal oscillator.
  • FIG. 3 is a schematic flow chart of the method for manufacturing a crystal oscillator provided in the fourth embodiment of the application
  • FIGS. 4A-4F are schematic cross-sectional views of the mechanism prepared in each step of the method for manufacturing a crystal oscillator provided in the fourth embodiment of the application.
  • This embodiment provides a method for manufacturing a crystal oscillator, where the method is shown in FIG. 3 and includes the following steps:
  • S401 Provide a substrate, and the substrate includes a support layer, a buried oxygen layer, and a silicon layer stacked in sequence;
  • a substrate 10a is provided, and the substrate 10a includes a silicon layer 11, a buried oxygen layer 12, and a support layer 13 from top to bottom. That is, in this embodiment, the substrate 10a is an SOI wafer. That is, the silicon (Silicon-On-Insulator, referred to as SOI) on the insulating substrate 10a.
  • SOI Silicon-On-Insulator
  • the silicon layer 11, the buried oxide layer 12, and the support layer 13 can be made of single crystal silicon, silicon dioxide, and single crystal silicon, respectively.
  • the thickness of the silicon layer 11 may be 5um to 20um
  • the thickness of the buried oxide layer 12 may be ⁇ 1um
  • the thickness of the support layer 13 may be 300-700um.
  • the thickness of the silicon layer 11, the buried oxide layer 12 and the support layer 13 They can be: 8 microns, 0.3 microns and 600 microns.
  • S402 forming a functional layer on the silicon layer, and the functional layer includes a first excitation electrode, a crystal layer, and a second excitation electrode that are sequentially stacked on the silicon layer;
  • the first excitation electrode 41 is formed on the silicon layer 11, and at the same time, a pad 412 electrically connected to the first excitation electrode 41 is formed.
  • the first excitation electrode 41 may be Ag, Au, or TiN. Air oxidized or aged materials, then a crystal layer 43b is formed on the silicon layer 11 forming the first excitation electrode 41, and a second excitation electrode 42 is formed on the crystal layer 43b.
  • the second excitation electrode 42 can be a metal such as Ag, Au, etc.
  • the functional layer 401 is produced.
  • the first excitation electrode 41 and the second excitation electrode 42 are both designed patterned electrodes. The production of the first excitation electrode 41 and the second excitation electrode 42 can be lifted. -off technology production.
  • the crystal layer 43b is formed on the silicon layer 11 forming the first excitation electrode 41
  • the crystal layer 43b and the silicon layer 11 are bonded together through a fusion bonding process or a resin bonding process.
  • the first excitation electrode 41 on the silicon layer 11 before forming the first excitation electrode 41 on the silicon layer 11, it further includes forming a first insulating layer 21 on the silicon layer 11, and forming a first excitation electrode on the first insulating layer 21.
  • a planarization layer 30 is formed on the first insulating layer 21 forming the first excitation electrode 41, and then a crystal layer 43b is formed on the planarization layer 30 and the first excitation electrode 41, and finally, The second excitation electrode 42 is formed on the crystal layer 43b.
  • the spacer 421 in the above-mentioned embodiment is formed at the same time during the formation of the second excitation electrode 42.
  • the second excitation electrode 42 before forming the second excitation electrode 42 on the crystal layer 43b, it further includes: forming the second insulating layer 22 on the crystal layer 43b, so that the second excitation electrode 42 is formed on the second insulating layer 22, The second insulating layer 22 is used to insulate the second excitation electrode 42 from the crystal layer 43b, and finally form a structure as shown in FIG. 4D.
  • the top surface of the crystal layer 43b is etched to form a relief groove 102, and the relief groove 102 extends to the silicon layer 11, where a second insulating layer is provided on the crystal layer 43b.
  • the relief groove 12 is opened and extended from the second insulating layer 22 to the silicon layer 11.
  • a spacer 412 that can expose the first excitation electrode 41 is formed on the functional layer 401
  • a hole can be filled with a conductive material to form a contact hole 411.
  • the contact hole 411 is used to electrically connect to the first excitation electrode 41.
  • the functional layer is specifically formed by dry or wet etching.
  • a release groove 102 is formed on the 401, and a photoresist is set for the area to be protected during the etching process of the release groove 102, and the crystal layer 43 in the area not protected by the photoprosthesis is removed, and finally there is a connection area between the crystal oscillator 40 and the edge functional layer , So that the crystal oscillator 40 can be suspended on the cavity structure 101.
  • S404 forming a cavity structure connected to the release groove on the silicon layer, so that the functional layer is divided by the release groove into a crystal oscillator suspended above the cavity structure and an edge functional layer located on the substrate and connected to the crystal oscillator;
  • the silicon layer 11 is etched along the relief groove 102 to form a cavity structure 101 on the silicon layer 11, and finally the functional layer 401 is divided by the relief groove 102 Is the crystal oscillator 40 suspended above the cavity structure 101 and the edge functional layer located on the substrate 10a and connected to the crystal oscillator 40, wherein the crystal oscillator 40 includes a first excitation electrode 41, a crystal layer 43 and a second excitation
  • the electrode 42, the edge function layer also includes a crystal layer 43, a first excitation electrode 41 and a second excitation electrode 42, and the first excitation electrode 41 in the crystal oscillator 40 is electrically connected to the first excitation electrode 41 in the edge function layer,
  • the second excitation electrode 42 in the crystal oscillator 40 is electrically connected to the second excitation electrode 42 in the edge function layer.
  • the spacer and the contact hole 411 are both located on the edge function layer.
  • the etching the etching
  • the second insulating layer 22 on the crystal layer 43 that is not covered by the second excitation electrode 42 can be removed to finally form the crystal oscillator shown in FIG. 4F.
  • the method for manufacturing the crystal oscillator provided by this embodiment is to form a functional layer 401 on the silicon layer 11, and the functional layer 401 includes a first excitation electrode 41, a crystal layer 43b, and a second excitation electrode 41, a crystal layer 43b, and a second excitation electrode 41 that are sequentially stacked on the silicon layer 11.
  • the electrode 42, a relief groove 102 and a contact hole 411 are formed on the functional layer 401, and a cavity structure 101 communicating with the relief groove 102 is formed on the silicon layer 11 to form a crystal oscillator 40 suspended above the cavity structure 101 and located
  • the edge function layer on the substrate 10a and connected to the crystal oscillator 40 finally produces a crystal oscillator with a smaller size, and when the above steps are used to make the crystal oscillator, the processing accuracy of the crystal oscillator is higher and the performance of the crystal oscillator is better.
  • the crystal oscillator 40 is suspended on the cavity structure 101, which improves the mechanical quality factor of the crystal oscillator 40.
  • the manufacturing method of the crystal oscillator provided by this embodiment realizes the small size of the crystal oscillator and high processing precision.
  • the purpose of this method is to solve the problem that the existing crystal oscillators are large in size and cannot meet the miniaturization requirements of mobile terminals.
  • FIGS. 6A-6K are schematic cross-sectional structure diagrams of structures prepared in each step of the method for manufacturing a crystal oscillator provided in the fifth embodiment of the application.
  • This embodiment provides a method for manufacturing a crystal oscillator, where the method is shown in FIG. 5 and includes the following steps:
  • S501 Provide a silicon wafer, which includes a front side and a back side;
  • a silicon wafer 10b is provided.
  • the silicon wafer 10b is specifically a 6-inch monocrystalline silicon wafer.
  • the silicon wafer 10b has a front surface and a back surface.
  • the first excitation electrode 41 when the first excitation electrode 41 is formed on the front surface of the silicon wafer 10b, specifically, P-type doping is implanted into the front surface of the silicon wafer 10b by ion implantation to form a heavily doped silicon conductive layer.
  • the silicon-doped conductive layer serves as the first excitation electrode 41.
  • the crystalline layer 43b and the silicon wafer 10b are bonded by the bonding technology in the semiconductor process.
  • an insulating layer 22a is formed on the side of the crystal layer 43b away from the first excitation electrode 41 by a PECVD process, and the material of the insulating layer 22a may be Si 3 N 4 .
  • the silicon wafer 10b is turned over so that the back of the silicon wafer 10b faces upward, and then a cavity structure 101 is formed on the back of the silicon wafer 10b through a wet etching process, and the cavity structure 101 extends to the first
  • the excitation electrode 41 that is, in this embodiment, the etching process stops when it reaches the first excitation electrode 41.
  • a first relief groove 102a is formed on the first excitation electrode 41 located in the cavity structure 101, and the groove bottom of the first relief groove 102a extends to the insulating layer 22a. That is, in this embodiment, the first The area corresponding to the excitation electrode 41 and the crystal layer 43b and the first relief groove 102a is removed to form the first relief groove 102a.
  • the first relief groove 102a is a non-closed annular groove, that is, it is located in the cavity.
  • connection area between the first excitation electrode 41 in the structure 101 and the first excitation electrode 41 outside the cavity structure 102, which ensures that the subsequently formed crystal oscillator 40 passes through the connection area of the first excitation electrode 41 (ie, the first cantilever 431a ) Hanging on the cavity structure 101.
  • a sealing layer for sealing one end of the cavity structure is provided on the back of the silicon wafer;
  • the sealing layer 111 may specifically be a silicon wafer, and the silicon wafer and the above-mentioned silicon wafer 10b can seal the cavity through a bonding process.
  • a contact hole 411 electrically connected to the first excitation electrode 41 is provided on the insulating layer 22a. Specifically, the contact hole 411 is located at the edge of the insulating layer 22a. Place.
  • electrode materials are made on the surface of the wafer by sputtering, coating, etc., and the required electrode patterns are made by photolithography.
  • the second excitation electrode 42 and the first excitation electrode 41 can be It is led out in the same direction, or in this embodiment, as shown in FIG. 2A, the second excitation electrode 42 may be led out in a direction opposite to the first excitation electrode 41.
  • a second release groove 102b connected to the first release groove 102a is opened in at least a part of the insulating layer 22a corresponding to the first release groove 102a, That is, part of the insulating layer 22a is removed, so that the cavity structure 101 communicates with the outside, and the release of the crystal oscillator 40 is realized.
  • the second releasing groove 102b when the second releasing groove 102b is formed on the insulating layer 22a, the second releasing groove 102b can be connected to The first release groove 102a is completely overlapped, so that the first excitation electrode 41 and the second excitation electrode 42 are drawn out in the same direction, or, in this embodiment, as shown in FIGS.
  • the second excitation electrode 42 is The second release groove 102b is not disconnected, that is, the second excitation electrode 42 is drawn out along the unremoved area of the insulating layer 22a, so that the formed crystal oscillator 40 is suspended in the air through the second excitation electrode 42 and the second excitation electrode 42.
  • the crystal oscillator as shown in FIG. 6K is finally produced.
  • the crystal oscillator 40 includes at least a first excitation electrode 41, a crystal layer 43 and a second excitation electrode 42.
  • the crystal layer 43b is divided into two parts by the division of the first relief groove 102a and the second relief groove 102b, which are the crystal layer 43 and the crystal layer 43a, and in this embodiment, the crystal layer 43 and the crystal layer 43a are disconnected.
  • the crystal layer 43 is located above the cavity structure 102, and the crystal layer 43a is located on the area of the silicon wafer 10b where the cavity structure 101 is not provided.
  • the second relief groove 102b can also directly etch the insulating layer 22a after the first relief groove 102a is etched, that is, the first relief groove 102a and the second relief groove 102b pass through The two etchings are formed together, so that the second excitation electrode 42 only needs to be formed on the side of the insulating layer 22a away from the crystal layer 43b to form the crystal oscillator 40.
  • the method further includes: reducing the thickness of the crystal layer 43b to reduce the thickness of the crystal layer 43b.
  • a mechanical grinding process can be used to thin the crystal layer 43b.
  • connection should be understood in a broad sense.
  • it can be a fixed connection or an intermediate connection.
  • the medium is indirectly connected, which can be the internal communication between two elements or the interaction between two elements.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

La présente invention se rapporte à un oscillateur à cristal et son procédé de fabrication et son appareil. L'oscillateur à cristal comprend un substrat à base de silicium (10) et une unité d'oscillation à cristal (40). Le substrat à base de silicium (10) est pourvu d'une structure de cavité (101) permettant l'oscillation de l'unité d'oscillation à cristal (40). L'unité d'oscillation à cristal (40) est suspendue au-dessus de la structure de cavité (101). L'unité d'oscillation à cristal (40) comprend une première électrode d'excitation (41), une couche de cristal (43) et une seconde électrode d'excitation (42) empilées l'une au-dessus de l'autre, réalisant ainsi un oscillateur à cristal de petite taille, améliorant la précision de traitement de l'oscillateur à cristal, et résolvant le problème dans l'état de la technique dans lequel un oscillateur à cristal a une grande taille et est incapable de satisfaire l'exigence de compacité de terminaux mobiles.
PCT/CN2019/080214 2019-03-28 2019-03-28 Oscillateur à cristal et son procédé de fabrication et son appareil WO2020191750A1 (fr)

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CN201980000483.6A CN110114971A (zh) 2019-03-28 2019-03-28 晶体振荡器及其制作方法和设备

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