WO2020181569A1 - Procédé de fabrication de panneau d'affichage, panneau d'affichage et dispositif électronique - Google Patents

Procédé de fabrication de panneau d'affichage, panneau d'affichage et dispositif électronique Download PDF

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Publication number
WO2020181569A1
WO2020181569A1 PCT/CN2019/078795 CN2019078795W WO2020181569A1 WO 2020181569 A1 WO2020181569 A1 WO 2020181569A1 CN 2019078795 W CN2019078795 W CN 2019078795W WO 2020181569 A1 WO2020181569 A1 WO 2020181569A1
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WIPO (PCT)
Prior art keywords
layer
water blocking
display panel
quantum
blocking layer
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Application number
PCT/CN2019/078795
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English (en)
Chinese (zh)
Inventor
杨中国
吴元均
李金川
Original Assignee
深圳市华星光电半导体显示技术有限公司
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Publication of WO2020181569A1 publication Critical patent/WO2020181569A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants

Definitions

  • This application relates to the field of display technology, in particular to a manufacturing method of a display panel, a display panel and an electronic device.
  • Quantum Dot is an inorganic nanoscale semiconductor material. By applying a certain light pressure and electric field to it, it will emit light of a specific frequency, and the frequency of the emitted light will vary with the size of the quantum dot Therefore, by precisely controlling the size of the quantum dots, it is possible to emit very pure RGB three primary colors, thereby significantly improving the color gamut. It has been widely used in QD-LCD TVs.
  • Organic light-emitting diode Light-Emitting Diode, OLED has self-luminous, ultra-thin, fast response speed, wide viewing angle and other characteristics. Blue organic light-emitting diode devices (Blue Organic Light-Emitting Diode (BOLED) is an ideal light source for excitation of quantum dots. Therefore, the combination of quantum dots and BOLED (QD-BOLED) panels will have the advantages of both quantum dots and OLEDs, thereby improving product performance.
  • QD and OLED are both susceptible to moisture and must be packaged.
  • the mainstream packaging of QD-LCD quantum dots is the On-Surface method, that is, the sheet material with quantum dots sandwiched between the films is pasted between the backlight and the LCD panel.
  • the quantum dot material is on the panel.
  • the On-Surface method is more mature in QD-LCD, it is not suitable for QD-BOLED. Therefore, it is necessary to develop new packaging methods and structures to improve QD-BOLED The TV panel is packaged.
  • the embodiments of the present application provide a method for manufacturing a display panel, a display panel, and an electronic device, which can effectively improve the packaging effect of the display panel, and can simultaneously meet the packaging requirements for quantum dots and organic light emitting diodes of a large-size display panel.
  • An embodiment of the present application provides a manufacturing method of a display panel, including:
  • the thin film transistor substrate packaging structure and the cover plate packaging structure are vacuum bonded through the sealant layer, wherein the first water blocking layer and the second water blocking layer are correspondingly bonded through the sealant layer.
  • the manufacturing the blue organic light emitting diode device and the first water blocking layer on the thin film transistor substrate to obtain the thin film transistor substrate packaging structure includes:
  • a first water blocking layer is formed on the blue organic light emitting diode device to obtain a thin film transistor substrate packaging structure.
  • the manufacturing a blue organic light emitting diode device on the thin film transistor substrate includes:
  • the blue organic light emitting diode device is fabricated on the thin film transistor substrate by evaporation or inkjet printing.
  • the forming a first water blocking layer on the blue organic light emitting diode device includes:
  • the first water blocking layer is formed on the blue organic light emitting diode device by means of plasma enhanced chemical vapor deposition.
  • the forming a color film, a quantum layer and a second water blocking layer on the cover plate to obtain a cover plate packaging structure includes:
  • a second water blocking layer is formed on the quantum layer to obtain a cover plate package structure.
  • the forming a color film on the cover plate includes:
  • a color film with red pixel units, green pixel units, blue pixel units and black matrix is formed on the cover plate, wherein the black matrix is distributed on the periphery of the color film and each adjacent red pixel unit, green Between the pixel unit and the blue pixel unit.
  • the forming a barrier layer on the color film includes:
  • the barrier layer is deposited on the color film by means of plasma enhanced chemical vapor deposition.
  • the pixel definition layer includes a plurality of pixel definition units arranged at intervals, and the formation of a quantum layer on the pixel definition layer includes:
  • a quantum dot is arranged between the pixel definition units arranged at each interval to form the quantum layer.
  • the arranging quantum dots between the pixel defining units arranged at each interval includes:
  • the quantum dots are arranged between each of the pixel defining units arranged at intervals by means of inkjet printing.
  • the forming a second water blocking layer on the quantum layer includes:
  • the second water blocking layer is formed on the quantum layer by means of plasma enhanced chemical vapor deposition or atomic layer deposition.
  • the sealant layer when the sealant layer is in an idle state, one side of the sealant layer is provided with a first protective film, and the other side of the sealant layer is provided with a first protective film.
  • Two protective films, the vacuum bonding of the thin film transistor substrate packaging structure and the cover plate packaging structure through the sealant layer includes:
  • the sealant layer is cured by ultraviolet curing or heating.
  • the embodiment of the present application also provides a display panel, including: a thin film transistor substrate packaging structure, a cover plate packaging structure, and a sealant layer;
  • the thin film transistor substrate packaging structure includes a thin film transistor substrate, a blue organic light emitting diode device and a first water blocking layer which are arranged in sequence;
  • the cover plate packaging structure includes a cover plate, a color film, a quantum layer, and a second water blocking layer arranged in sequence;
  • the thin film transistor substrate packaging structure is attached to the cover package structure through the sealant layer, wherein the first water blocking layer and the second water barrier layer are correspondingly attached through the sealant layer.
  • the cover package structure further includes a barrier layer and a pixel definition layer
  • the barrier layer is disposed on the color filter
  • the pixel definition layer is disposed on the blocking layer
  • the quantum layer is disposed on the pixel definition layer
  • the second water blocking layer is disposed on the The quantum layer.
  • the pixel definition layer includes a plurality of pixel definition units arranged at intervals, and quantum dots are arranged between each of the pixel definition units arranged at intervals to form the quantum Floor.
  • the first water blocking layer covers the blue organic light emitting diode device
  • the second water blocking layer and the barrier layer cover the quantum layer
  • the first A water blocking layer, a second water blocking layer and a barrier layer are covered by the sealant layer.
  • the first water blocking layer is made of any one or more materials among silicon nitride, silicon oxynitride and silicon oxide.
  • the second water blocking layer is made of any one or more materials of silicon nitride, silicon oxynitride, silicon oxide, aluminum oxide, and silicon dioxide. to make.
  • An embodiment of the present application further provides an electronic device, including a housing and a display panel, the display panel is mounted on the housing, and the display panel includes: a thin film transistor substrate packaging structure, a cover packaging structure, and a sealant layer ;
  • the thin film transistor substrate packaging structure includes a thin film transistor substrate, a blue organic light emitting diode device and a first water blocking layer which are arranged in sequence;
  • the cover plate packaging structure includes a cover plate, a color film, a quantum layer, and a second water blocking layer arranged in sequence;
  • the thin film transistor substrate packaging structure is attached to the cover package structure through the sealant layer, wherein the first water blocking layer and the second water barrier layer are correspondingly attached through the sealant layer.
  • the cover package structure further includes a barrier layer and a pixel definition layer
  • the barrier layer is disposed on the color filter
  • the pixel definition layer is disposed on the blocking layer
  • the quantum layer is disposed on the pixel definition layer
  • the second water blocking layer is disposed on the The quantum layer.
  • the pixel definition layer includes a plurality of pixel definition units arranged at intervals, and quantum dots are arranged between the pixel definition units arranged at intervals to form the quantum Floor.
  • An embodiment of the present application provides a method for manufacturing a display panel by providing a thin film transistor substrate; fabricating a blue organic light-emitting diode device and a first water blocking layer on the thin film transistor substrate to obtain a thin film transistor substrate packaging structure; and providing a cover Plate; forming a color film, a quantum layer and a second water blocking layer on the cover plate to obtain a cover plate packaging structure; providing a sealant layer; vacuum bonding the thin film transistor substrate packaging structure and the cover plate packaging structure through the sealant layer Wherein, the first water blocking layer and the second water blocking layer are correspondingly bonded through the sealant layer.
  • the BOLED is fabricated and packaged on the TFT substrate, and then the QD is fabricated and packaged on the cover plate, and finally the TFT substrate packaging structure and the cover plate packaging structure are vacuum bonded through the sealant layer, which can effectively enhance the display panel
  • the packaging effect can meet the packaging requirements of large-size display panels for quantum dots and organic light emitting diodes.
  • FIG. 1 is a schematic structural diagram of an electronic device provided by an embodiment of the application.
  • FIG. 2 is a schematic structural diagram of a display panel provided by an embodiment of the application.
  • FIG. 3 is a schematic diagram of a first process of a method for manufacturing a display panel provided by an embodiment of the application.
  • FIG. 4 is a schematic diagram of a second process of a method for manufacturing a display panel provided by an embodiment of the application.
  • FIG. 5 is a schematic diagram of a third process of a method for manufacturing a display panel provided by an embodiment of the application.
  • FIG. 6 is a schematic diagram of a fourth process of a method for manufacturing a display panel provided by an embodiment of the application.
  • FIG. 7 is a schematic diagram of the fifth process of the manufacturing method of the display panel provided by the embodiment of the application.
  • FIG 8 and 9 are schematic diagrams of the manufacturing process flow of the display panel provided by the embodiments of the application.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first” and “second” may explicitly or implicitly include one or more of the features. In the description of this application, “multiple” means two or more than two, unless otherwise specifically defined.
  • connection should be interpreted broadly unless otherwise clearly specified and limited.
  • it can be a fixed connection or a detachable connection.
  • Connected or integrally connected it can be mechanically connected, or electrically connected or can communicate with each other; it can be directly connected, or indirectly connected through an intermediate medium, it can be the internal communication of two components or the interaction of two components relationship.
  • connection should be interpreted broadly unless otherwise clearly specified and limited.
  • it can be a fixed connection or a detachable connection.
  • Connected or integrally connected it can be mechanically connected, or electrically connected or can communicate with each other; it can be directly connected, or indirectly connected through an intermediate medium, it can be the internal communication of two components or the interaction of two components relationship.
  • the "on” or “under” of the first feature of the second feature may include the first and second features in direct contact, or may include the first and second features Not in direct contact but through other features between them.
  • “above”, “above” and “above” the second feature of the first feature include the first feature being directly above and obliquely above the second feature, or merely indicating that the first feature is higher in level than the second feature.
  • the “below”, “below” and “below” the first feature of the second feature include the first feature directly below and obliquely below the second feature, or it simply means that the level of the first feature is smaller than the second feature.
  • the embodiments of the present application provide a method for manufacturing a display panel, a display panel, and an electronic device.
  • the display panel can be integrated in an electronic device.
  • the display panel can be made using the method for manufacturing a display panel.
  • the electronic device can be a smart wearable device. , Smart phones, tablets, smart TVs and other devices.
  • An embodiment of the present application provides an electronic device including a housing and a display panel, the display panel is mounted on the housing, and the display panel includes: a thin film transistor substrate packaging structure, a cover packaging structure, and a sealant layer;
  • the thin film transistor substrate packaging structure includes a thin film transistor substrate, a blue organic light emitting diode device and a first water blocking layer which are arranged in sequence;
  • the cover plate packaging structure includes a cover plate, a color film, a quantum layer, and a second water blocking layer arranged in sequence;
  • the thin film transistor substrate packaging structure is attached to the cover package structure through the sealant layer, wherein the first water blocking layer and the second water barrier layer are correspondingly attached through the sealant layer.
  • the cover package structure further includes a barrier layer and a pixel definition layer
  • the barrier layer is disposed on the color filter
  • the pixel definition layer is disposed on the blocking layer
  • the quantum layer is disposed on the pixel definition layer
  • the second water blocking layer is disposed on the The quantum layer.
  • the pixel definition layer includes a plurality of pixel definition units arranged at intervals, and quantum dots are arranged between the pixel definition units arranged at intervals to form the quantum Floor.
  • FIG. 1 is a schematic structural diagram of an electronic device provided by an embodiment of the application.
  • the electronic device 100 may include a display panel 10, a control circuit 20, and a housing 30. It should be noted that the electronic device 100 shown in FIG. 1 is not limited to the above content, and may also include other devices, such as a camera, an antenna structure, a pattern unlocking module, and the like.
  • the display panel 10 is disposed on the housing 30.
  • the display panel 10 may be fixed to the housing 30, and the display panel 10 and the housing 30 form a closed space to accommodate the control circuit 20 and other devices.
  • the housing 30 may be made of a flexible material, such as a plastic housing or a silicone housing.
  • control circuit 20 is installed in the housing 30.
  • the control circuit 20 can be the main board of the electronic device 100.
  • the control circuit 20 can be integrated with a battery, an antenna structure, a microphone, a speaker, a headphone interface, a universal serial bus interface, One, two or more of functional components such as camera, distance sensor, ambient light sensor, receiver, and processor.
  • the display panel 10 is installed in the housing 30, and at the same time, the display panel 10 is electrically connected to the control circuit 20 to form the display surface of the electronic device 100.
  • the display panel 10 may include a display area and a non-display area.
  • the display area can be used to display the screen of the electronic device 100 or for the user to perform touch manipulation.
  • This non-display area can be used to set various functional components.
  • FIG. 2 is a schematic structural diagram of a display panel provided by an embodiment of the application.
  • the display panel 10 may include a thin film transistor substrate packaging structure 11, a cover plate packaging structure 12 and a sealant layer 13.
  • the thin film transistor substrate packaging structure 11 includes thin film transistor substrates (Thin Film Transistor, TFT) 111, a blue organic light emitting diode device 112, and a first water blocking layer 113.
  • thin film transistor substrates Thin Film Transistor, TFT
  • TFT Thin Film Transistor
  • the cover package structure 12 includes a cover 121, a color film 122, a quantum layer 123, and a second water blocking layer 124 arranged in sequence.
  • the thin film transistor substrate packaging structure 11 is bonded to the cover package structure 12 through the sealant layer 13, wherein the first water blocking layer 113 and the second water blocking layer 124 are correspondingly bonded through the sealant layer 13.
  • one side 131 of the sealant layer 13 is attached to the first water blocking layer 113, and the other side 132 of the sealant layer 13 is attached to the second water blocking layer 124, so that the first water blocking layer 113 and the second water blocking layer 124 is correspondingly bonded through the sealant layer 13.
  • one side 131 and the other side 132 of the sealant layer 13 are arranged opposite to each other.
  • the color film 122 may be a color filter (Color filter, CF).
  • the color film 122 includes a red pixel unit 1221, a green pixel unit 1222, a blue pixel unit 1223, and a black matrix 1224, wherein the black matrix 1224 is distributed on the periphery of the color film 122 and each adjacent red pixel unit 1221 , The green pixel unit 1222, the blue pixel unit 1223.
  • the first water blocking layer 113 may be made of any one or more materials such as silicon nitride (SiNx), silicon oxynitride (SiON), and silicon oxide (SiOx).
  • the second water blocking layer 124 may be made of silicon nitride (SiNx), silicon oxynitride (SiON), silicon oxide (SiOx), aluminum oxide (Al2O3), silicon dioxide (SiO2), etc. Made of one material or multiple materials.
  • the first water blocking layer 113 and the second water blocking layer 124 may have a single-layer structure or a multilayer structure.
  • it can be made of multiple layers of inorganic material films; or can be made of multiple layers of metal material films; or it can be made of alternating inorganic material films and metal material films.
  • the cover package structure 12 further includes a barrier layer 126 and a pixel definition layer 127.
  • the blocking layer 126 is disposed on the color film 122, the pixel defining layer 127 is disposed on the blocking layer 126, the quantum layer 123 is disposed on the pixel defining layer 127, and the second water blocking layer 124 is disposed on the quantum layer 123.
  • the pixel definition layer 127 includes a plurality of pixel definition units 1271 arranged at intervals, and quantum dots 1231 are arranged between the pixel definition units 1271 arranged at intervals to form the quantum layer 123.
  • the first water blocking layer 113 covers the blue organic light emitting diode device 112
  • the second water blocking layer 124 and the blocking layer 126 cover the quantum layer 123
  • the first water blocking layer 113 and the second water blocking layer 124 and the barrier layer 126 are covered by the sealant layer 13.
  • the display panel 10 provided by the embodiment of the present application includes a thin film transistor substrate packaging structure 11, a cover plate packaging structure 12, and a sealant layer 13.
  • the thin film transistor substrate packaging structure 11 includes thin film transistor substrates (Thin Film Transistor, TFT) 111, blue organic light emitting diode device 112, and first water blocking layer 113; cover plate package structure 12 includes cover plate 121, color film 122, quantum layer 123 and second water blocking layer 124 arranged in sequence, thin film transistor
  • the substrate package structure 11 is attached to the cover package structure 12 through the sealant layer 13, wherein the first water blocking layer 113 and the second water barrier layer 124 are correspondingly attached through the sealant layer 13.
  • the BOLED is packaged in the TFT substrate packaging structure, and the QD is packaged in the cover plate packaging structure, and finally the TFT substrate packaging structure and the cover plate packaging structure are vacuum bonded through the sealant layer, which can effectively improve the display panel
  • the packaging effect can simultaneously meet the packaging requirements for quantum dots and organic light-emitting diodes of large-size display panels.
  • FIGS. 3 to 6 are schematic diagrams of the first to fourth processes of the manufacturing method of the display panel provided by the embodiments of the present application.
  • the manufacturing method of the display panel includes:
  • Step 101 Provide a thin film transistor substrate 111.
  • Step 102 fabricating a blue organic light emitting diode device 112 and a first water blocking layer 113 on the thin film transistor substrate 111 to obtain the thin film transistor substrate packaging structure 11.
  • step 102 may be implemented through steps 1021 to 1022, specifically:
  • Step 1021 fabricate a blue organic light emitting diode device 112 on the thin film transistor substrate 111.
  • fabricating the blue organic light emitting diode device 112 on the thin film transistor substrate 111 includes:
  • the blue organic light emitting diode device 112 is fabricated on the thin film transistor substrate 111 by evaporation or inkjet printing.
  • Step 1022 forming a first water blocking layer 113 on the blue organic light emitting diode device 112 to obtain a thin film transistor substrate packaging structure.
  • forming the first water blocking layer 113 on the blue organic light emitting diode device 112 includes:
  • the first water blocking layer 113 is formed on the blue organic light emitting diode device 112 by means of Plasma Enhanced Chemical Vapor Deposition (PECVD).
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • the first water blocking layer 113 may also be formed on the blue organic light emitting diode device 112 by means of atomic layer deposition (ALD).
  • ALD atomic layer deposition
  • Step 103 Provide a cover 121.
  • step 104 a color film 122, a quantum layer 123 and a second water blocking layer 124 are formed on the cover plate 121 to obtain the cover plate package structure 12.
  • step 104 may be implemented through steps 1041 to 1044, specifically:
  • Step 1041 forming a color film 122 on the cover 121.
  • forming the color film 122 on the cover 121 includes:
  • a color film 122 having red pixel units 1221, green pixel units 1222, blue pixel units 1223, and black matrix 1224 is formed on the cover 121, wherein the black matrix 1224 is distributed on the periphery of the color film 122 and each adjacent red pixel unit 1221 between the green pixel unit 1222 and the blue pixel unit 1223.
  • a barrier layer 126 is formed on the color film 122, and a pixel definition layer 127 is formed on the barrier layer 126.
  • forming the barrier layer 126 on the color film 122 includes:
  • the barrier layer 126 is deposited on the color film 122 by means of plasma enhanced chemical vapor deposition.
  • Step 1043 forming a quantum layer 123 on the pixel defining layer 127.
  • the pixel definition layer 127 includes a plurality of pixel definition units 1271 arranged at intervals, and the quantum layer 123 is formed on the pixel definition layer 127, including:
  • Quantum dots 1231 are arranged between the pixel defining units 1271 arranged at each interval to form the quantum layer 123.
  • the quantum dots 1231 are arranged between the pixel definition units 1271 arranged at each interval, including:
  • the quantum dots 1231 are arranged between the pixel defining units 1271 arranged at each interval by inkjet printing.
  • step 1044 a second water blocking layer 124 is formed on the quantum layer 123 to obtain the cover package structure 12.
  • forming the second water blocking layer 124 on the quantum layer 123 includes:
  • the second water blocking layer 124 is formed on the quantum layer 123 by means of plasma enhanced chemical vapor deposition or atomic layer deposition.
  • Step 105 provide a sealant layer 13;
  • Step 106 vacuum bonding the thin film transistor substrate packaging structure 11 and the cover packaging structure 12 through the sealant layer 13, wherein the first water blocking layer 113 and the second water blocking layer 124 are correspondingly bonded through the sealant layer 13.
  • step 106 can be implemented through steps 1061 to 1063, specifically:
  • step 1061 the first protective film 14 is torn off, and one side 131 of the sealant layer 13 is vacuum bonded to the first water blocking layer 113 on the thin film transistor substrate packaging structure 11.
  • step 1062 the second protective film 15 is torn off, and the other surface 132 of the sealant layer 13 is vacuum bonded to the second water blocking layer 124 on the cover package structure 12.
  • Step 1063 curing the sealant layer 13 by ultraviolet curing or heating.
  • FIG. 7 is a schematic diagram of the fifth process of the manufacturing method of the display panel provided by the embodiment of the application
  • FIG. 8 and FIG. 9 are the preparation of the display panel provided by the embodiment of the application. Schematic diagram of the process flow.
  • the manufacturing method of the display panel includes:
  • Step 201 providing a thin film transistor substrate 111.
  • a blue organic light emitting diode device 112 is fabricated on the thin film transistor substrate 111 by evaporation or inkjet printing.
  • Step 203 forming a first water blocking layer 113 on the blue organic light emitting diode device 112 by means of plasma enhanced chemical vapor deposition.
  • Step 204 provide a cover 121.
  • Step 205 forming a color film 122 having a red pixel unit 1221, a green pixel unit 1222, a blue pixel unit 1223, and a black matrix 1224 on the cover 121.
  • the black matrix 1224 is distributed between the periphery of the color filter 122 and the adjacent red pixel units 1221, green pixel units 1222, and blue pixel units 1223.
  • a barrier layer 126 is deposited on the color film 122 by means of plasma enhanced chemical vapor deposition, and a pixel definition layer 127 is formed on the barrier layer 126.
  • step 207 the quantum layer 123 is formed on the pixel defining layer 127 by inkjet printing.
  • the pixel definition layer 127 includes a plurality of pixel definition units 1271 arranged at intervals.
  • the quantum dots 1231 may be arranged between the pixel defining units 1271 arranged at intervals by inkjet printing to form the quantum layer 123.
  • Step 208 forming a second water blocking layer 124 on the quantum layer 123.
  • the second water blocking layer 124 may be formed on the quantum layer 123 by plasma-enhanced chemical vapor deposition or atomic layer deposition to obtain the cover package structure 12.
  • Step 209 provide a sealant layer 13, one side 131 of the sealant layer 13 is provided with a first protective film 14, and the other side 132 of the sealant layer 13 is provided with a second protective film 15.
  • step 210 the first protective film 14 is peeled off, and one side 131 of the sealant layer 13 is vacuum bonded to the first water blocking layer 113 on the thin film transistor substrate packaging structure 11.
  • step 211 the second protective film 15 is torn off, and the other surface 132 of the sealant layer 13 is vacuum bonded to the second water blocking layer 124 on the cover package structure 12.
  • step 212 the sealant layer 13 is cured by ultraviolet curing or heating.
  • An embodiment of the application provides a method for manufacturing a display panel, providing a thin film transistor substrate; fabricating a blue organic light-emitting diode device and a first water blocking layer on the thin film transistor substrate to obtain a thin film transistor substrate packaging structure; providing a cover plate ; Form a color film, a quantum layer and a second water blocking layer on the cover plate to obtain a cover plate packaging structure; provide a sealant layer; vacuum bonding the thin film transistor substrate packaging structure and the cover plate packaging structure through the sealant layer , Wherein the first water-blocking layer and the second water-blocking layer are correspondingly attached through the sealant layer.
  • the BOLED is fabricated and packaged on the TFT substrate, and then the QD is fabricated and packaged on the cover plate, and finally the TFT substrate packaging structure and the cover plate packaging structure are vacuum bonded through the sealant layer, which can effectively enhance the display panel
  • the packaging effect can meet the packaging requirements of large-size display panels for quantum dots and organic light emitting diodes.

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Abstract

L'invention concerne un procédé de fabrication de panneau d'affichage, un panneau d'affichage et un dispositif électronique. Le procédé consiste à : fournir un substrat de TFT (101) ; fabriquer une BODEL et une première couche étanche à l'eau sur le substrat de TFT pour obtenir une structure d'encapsulation de substrat de TFT (102) ; fournir une plaque de couvercle (103) ; former un film coloré, une couche quantique et une seconde couche étanche à l'eau sur la plaque de couvercle pour obtenir une plaque d'encapsulation de plaque de couvercle (104) ; fournir une couche adhésive d'étanchéité (105) ; et réaliser une fixation sous vide entre la première couche étanche à l'eau de la structure d'encapsulation de substrat de TFT et la seconde couche étanche à l'eau de la structure d'encapsulation de plaque de couvercle au moyen de la couche adhésive d'étanchéité (106).
PCT/CN2019/078795 2019-03-08 2019-03-20 Procédé de fabrication de panneau d'affichage, panneau d'affichage et dispositif électronique WO2020181569A1 (fr)

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CN201910176032.X 2019-03-08
CN201910176032.XA CN109950416A (zh) 2019-03-08 2019-03-08 显示面板的制作方法、显示面板及电子设备

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WO2020181569A1 true WO2020181569A1 (fr) 2020-09-17

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Publication number Priority date Publication date Assignee Title
CN110854291A (zh) * 2019-10-30 2020-02-28 深圳市华星光电半导体显示技术有限公司 一种显示面板及其制备方法
CN110943181A (zh) * 2019-11-22 2020-03-31 深圳市华星光电半导体显示技术有限公司 一种oled器件及其制备方法
CN112366281B (zh) * 2020-11-09 2023-04-07 合肥京东方卓印科技有限公司 一种封装盖板及其制造方法、显示板面、显示装置
CN113193132A (zh) * 2021-04-26 2021-07-30 睿馨（珠海）投资发展有限公司 一种量子点oled发光器件、显示装置及其制备方法
CN113193157A (zh) * 2021-04-26 2021-07-30 睿馨（珠海）投资发展有限公司 一种纳米压印制备硅基oled微型显示器的方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102760748A (zh) * 2012-04-02 2012-10-31 友达光电股份有限公司 可挠式显示面板及其封装方法
US20150187845A1 (en) * 2013-12-31 2015-07-02 Samsung Display Co., Ltd. Organic light-emitting diode (oled) display
CN108682753A (zh) * 2018-05-16 2018-10-19 深圳市华星光电技术有限公司 Oled显示面板及其制作方法
CN108735879A (zh) * 2018-07-26 2018-11-02 易美芯光（北京）科技有限公司 一种含有量子点的smd封装结构
CN109103344A (zh) * 2018-07-25 2018-12-28 云谷（固安）科技有限公司 一种白光oled器件和显示装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105097878B (zh) * 2015-07-17 2018-02-13 京东方科技集团股份有限公司 有机电致发光显示面板及制备方法、显示装置
CN105278153B (zh) * 2015-11-13 2018-03-06 深圳市华星光电技术有限公司 量子点彩膜基板的制备方法及量子点彩膜基板
CN105304684B (zh) * 2015-11-18 2019-02-01 深圳市华星光电技术有限公司 彩色显示装置及其制作方法
KR101965157B1 (ko) * 2017-02-28 2019-04-08 한국생산기술연구원 양자점 하이브리드 유기 발광 디스플레이 소자 및 그 제조 방법
CN107591431A (zh) * 2017-09-15 2018-01-16 深圳市华星光电半导体显示技术有限公司 一种彩膜基板及显示设备

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102760748A (zh) * 2012-04-02 2012-10-31 友达光电股份有限公司 可挠式显示面板及其封装方法
US20150187845A1 (en) * 2013-12-31 2015-07-02 Samsung Display Co., Ltd. Organic light-emitting diode (oled) display
CN108682753A (zh) * 2018-05-16 2018-10-19 深圳市华星光电技术有限公司 Oled显示面板及其制作方法
CN109103344A (zh) * 2018-07-25 2018-12-28 云谷（固安）科技有限公司 一种白光oled器件和显示装置
CN108735879A (zh) * 2018-07-26 2018-11-02 易美芯光（北京）科技有限公司 一种含有量子点的smd封装结构

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