WO2020175814A1 - Transfer device - Google Patents

Transfer device Download PDF

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Publication number
WO2020175814A1
WO2020175814A1 PCT/KR2020/001706 KR2020001706W WO2020175814A1 WO 2020175814 A1 WO2020175814 A1 WO 2020175814A1 KR 2020001706 W KR2020001706 W KR 2020001706W WO 2020175814 A1 WO2020175814 A1 WO 2020175814A1
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WO
WIPO (PCT)
Prior art keywords
base
transfer device
state
interval
stamping
Prior art date
Application number
PCT/KR2020/001706
Other languages
French (fr)
Korean (ko)
Inventor
김도년
이윤석
Original Assignee
서울대학교산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울대학교산학협력단 filed Critical 서울대학교산학협력단
Publication of WO2020175814A1 publication Critical patent/WO2020175814A1/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67144Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67721Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Definitions

  • the present invention relates to a transfer device, and in detail, mass transfer is possible.
  • Microdevices which can be exemplified as semiconductors, continue to develop at a high speed and are positioned as indispensable devices in the modern industry.
  • Micro light-emitting diode is a high-density display technology that uses high-efficiency devices, as an example of micro-devices, and makes it possible to realize ultra-miniature, light-weight, high-efficiency, and high-durability devices.
  • Ultra-compact ⁇ iLED devices must be precisely and quickly aligned and transferred to the driving circuit board.
  • One aspect of the present invention provides a transfer device capable of mass transfer.
  • One aspect of the present invention provides a transfer device capable of running the transfer interval.
  • the transfer device includes a base; a plurality of stamping portions provided on the base, wherein the base has a negative Poisson's ratio.
  • the base may operate in a first state and a second state extended from the first state so that the plurality of stamping portions are spaced apart from each other.
  • It may be configured to be spaced apart by one interval, and to be spaced apart from each other by a second interval larger than the first interval when the base is in the second state.
  • the plurality of stamping parts when the base is in the first state, the first 2020/175814 1» (:1 ⁇ 1 ⁇ 2020/001706)
  • the microdevices of the target substrate arranged at intervals of 2020/001706 are adhered and separated, and when the base is in the second state, the adhered to the target substrate at the second interval It can be configured to place microdevices.
  • the above micro device may include micro first high school 1).
  • the second interval includes a horizontal direction and a second horizontal interval, and a second vertical interval in the vertical direction, and the plurality of stamping portions, when the base is in the second state, the second horizontal interval and the It can be configured to be spaced at a second vertical interval different from the second horizontal interval.
  • the base includes a first section, and a second section adjacent to the first section, wherein the plurality of stamping parts, a first plurality of stamping parts disposed in the first section of the base, and the Including a second plurality of stamping portions disposed in the second section of the base adjacent to the first section, wherein the first plurality of stamping portions are spaced apart from the second plurality of stamping portions when the base is in the second state It can be configured so that the spacing is small.
  • the base may be configured to include at least a portion of the curved surface in the second state.
  • the base may be configured to be bendable.
  • the plurality of stamping portions may include an adhesive material.
  • the base and the plurality of stamping portions may be integrally formed.
  • mass transfer of micro-devices is possible by using an augitive (noh) structure.
  • the transfer process can be easily carried out even if the shape and size of the target substrate are different.
  • At least a portion of the target substrate includes a curved surface.
  • FIG. 1 is a perspective view of a transfer device and a manufacturing substrate according to an embodiment of the present invention.
  • Figure 2 3 ⁇ 4 is a front view of the transfer device according to an embodiment of the present invention.
  • FIG. 3 31), 30, 3 (1 is a conceptual diagram of a transfer device according to an embodiment of the present invention.
  • Figure 4a is a transfer device according to an embodiment of the present invention from the manufacturing substrate
  • FIG. 5 is a view of the first and second states of the transfer device according to an embodiment of the present invention.
  • FIG. 6 shows that the transfer device according to an embodiment of the present invention uses microdevices. Drawings on the operation to be placed on the target substrate.
  • FIG. 7 is a diagram illustrating a microdevice transfer process according to an embodiment of the present invention.
  • FIG. 8 is a view showing microdevices arranged on a target substrate through a transfer device according to an embodiment of the present invention.
  • FIGS 9A to 9D are views showing first to fourth states of the transfer device according to an embodiment of the present invention.
  • FIGS. 10 and 11 are front views of a transfer device according to another embodiment of the present invention.
  • FIG. 12 and 13 are front views of a transfer device according to another embodiment of the present invention.
  • first and second used in this specification may be used to describe various elements, but the above elements are not limited by the above terms. The terms are only used for the purpose of distinguishing one component from other components; for example, without departing from the scope of the rights of the present invention, the first component may be named the second component, similarly the second component Apprenticeship 1 component may be named.
  • the term "and/or" includes any combination of a plurality of related items or any of a plurality of related items.
  • It can refer to a unit that processes a function or operation; for example, the terms above are at least one hardware, such as field-programmable gate array (FPGA)/application specific integrated circuit (ASIC), or at least one software or processor stored in memory. It can mean at least one process processed by.
  • FPGA field-programmable gate array
  • ASIC application specific integrated circuit
  • FIGS. 1 and 2B are front views of a transfer device according to an embodiment of the present invention.
  • a transferring apparatus 40 is used to move and place transfer objects.
  • the transfer object may include a micro device 10aa.
  • the transfer object may include a micro LED.
  • the transfer object is a micro LED, but the object is not limited.
  • the transfer device 40 may include a base 50 and a plurality of stamping portions 70.
  • the base 50 can be formed in an auxetic structure.
  • the augmented structure can be made up of a negative Poisson's ratio (V).
  • V Poisson's ratio
  • the Poisson's ratio is horizontally caused by the vertical stress created in the material. As a ratio of deformation to vertical deformation, the following can be satisfied.
  • a negative Poisson's ratio means that when a positive (or negative) deformation displacement occurs in one of the horizontal and vertical directions, a positive (or negative) deformation displacement occurs in the other direction. do.
  • the base 50 may comprise a material having elasticity.
  • the structure is made of a material having elasticity, and can be constructed to be bent by an external force or to be restored to its original state when deformed.
  • a plurality of stamping portions 70 may be arranged to remove or place the transfer object.
  • the stamping portion 70 may be configured to have an adhesive force.
  • a plurality of stamping portions 70 may be adhered to the microdevice 10aa to be removed from the manufacturing substrate 10a and placed at a target position on the target substrate 20.
  • the plurality of stamping portions 70 and the base 50 may be integrally formed.
  • the type of the manufacturing board 10a and the target board 20 is not limited.
  • the manufacturing board 10a and the target board 20 May include a device board or interposer.
  • the plurality of stamping portions 70 may include an elastomer material having adhesive force. However, it is not limited thereto, and any material having adhesive force is satisfied.
  • the base 50 and the plurality of stamping portions 70 may be made of the same material.
  • the transfer device 40 may be made of a bendable material. That is, as will be described later, the transfer device 40 can transfer the microdevice 10aa even if at least a portion of the target substrate 20 includes a curved surface. It can be configured to be bendable so that it can be used. The specific material of the transfer device 40 is not limited.
  • the base 50 can operate in a first state (50a, see Fig. 2a) and a second state (see 50b, Fig. 2b) unfolded from the first state 50a.
  • the base 50 is in a second state ( In 50b), it can be configured to extend beyond the first state 50a.
  • the plurality of stamping portions 70 can be spaced apart at the first interval (II) as shown in Fig. 2A.
  • the plurality of stamping portions 70 may be spaced apart by a second interval 12 that is larger than the first interval (II) as shown in FIG. 2B.
  • the standard of the interval is the center of the plurality of stamping portions 70 as shown in FIGS. 2A and 2B.
  • Distance between days 2020/175814 1»(:1 ⁇ 1 ⁇ 2020/001706 There is, however, it is not limited to this, and the criterion of the spacing may be the distance between the plurality of stamping parts (70).
  • Microdevices (1 ⁇ ) arranged at intervals (II) can be adhered to the target points arranged at the first interval (II) and the larger second interval (12) on the target substrate 20 as shown in the figure.
  • the base (50) connects multiple base bodies (54) and multiple base bodies (54).
  • It may contain a plurality of legs (56).
  • a plurality of base bodies 54 and a plurality of legs 56 may be configured to be interconnected as shown in Fig. 2 3 ⁇ 4.
  • a stamping portion 70 may be provided on one surface of the plurality of base bodies 54.
  • the stamping portion 70 may be formed in a protruding structure from one surface of the plurality of base bodies 54, and may form an adhesive surface integrally with one surface of the base body 54.
  • the plurality of stamping portions 70 may be formed of a base body 54. It is described as being located on the body 54, but is not limited thereto.
  • a plurality of stamping portions 70 may be formed on a plurality of legs 56.
  • the plurality of legs 56 may be configured to extend from the plurality of base bodies 54.
  • the plurality of legs 56 may be formed integrally with the plurality of base bodies 54.
  • the base body 54 is provided so that four legs 56 arranged along its periphery are connected.
  • the shape of the base body 54 and the leg 56 is not limited, and the base 50 is an augitive structure. It is satisfied when it is formed as.
  • the division line when in the 50 ratio, the division line may be configured to open. However, it is not limited thereto, and a bendable guide portion (not shown) may be provided in the division line portion. It can be connected with the leg 56.
  • the guide part can be configured to be in a folded state when the base 50 is in the first state (50 ⁇ , and unfold when in the second state (50 ratio). The base 50 through the guide part ) Can be prevented from spreading beyond a certain state.
  • the augitive structure in this embodiment is a shape as shown in Fig. 2 3 ⁇ 4 as an example.
  • the present invention is not limited to this, and various shapes of augmentative structure may be applied.
  • the structure of the base 50 structurally implementing a negative Poisson's ratio has been described, but the present invention is not limited thereto.
  • the base 50 may have a negative Poisson's ratio depending on the characteristics of the material.
  • 31), 30, and 3 (1) are conceptual diagrams of a transfer device according to an embodiment of the present invention.
  • Figure 3 shows that the horizontal strain rate and the vertical strain rate increase or decrease together.
  • the base 150 of the transfer device 140 can be extended from a first state (150 ⁇ ) as shown in Fig. and a second state (150 ratio) as shown in Fig.
  • [64] also relates to a multi-layered augetics structure.
  • the examples described above take a two-dimensional augetics structure as an example, but as in Fig.
  • the height strain rate may also be deformed to increase or decrease. That is, the base 250 of the transfer device 240 may be an augetic structure in which the horizontal strain rate, the vertical strain rate, and the height strain rate increase or decrease together.
  • Fig. 3 ( 1 shows a hierarchical augetics structure.
  • a plurality of each layer is composed of the same augetics structure, but in Fig. 3 (1, each layer can be composed of a different augetics structure) have.
  • the transfer device 340 may include bases 351, 352, 353 having different structures from each other. Different bases (351, 352, 353) can be configured with an augitive structure that increases or decreases together; however, different bases (351, 352, 353) have the size of the lateral strain, vertical strain, and height strain. Can run.
  • Figure 4a is a transfer device according to an embodiment of the present invention from the manufacturing substrate
  • FIG. 5 3 ⁇ 4 is a drawing on the first and second states of the transfer device according to an embodiment of the present invention
  • Fig. 6 & the transfer device according to an embodiment of the present invention is It is a drawing on the operation of arranging microdevices on a target board.
  • the transfer device 40 is in contact with the manufacturing substrate () when the base 50 is operated in the first state (50 ⁇ ), and through a plurality of stamping portions 70 , a plurality of microcircuits of the manufacturing substrate (1 ( ⁇ ) It is possible to adhere to the device 1( ⁇ ).
  • the microdevice 1( placed on the manufacturing substrate 10 can be entirely adhered, and as shown in the figure, the microdevice 1( After this, the base 50 can be operated in the first state (from 50 to the second state 501) as shown in Fig. 5. In this process, each of the plurality of stamping portions 70 is adhered to each other.
  • the plurality of microdevices 1 can be spaced apart at a distance required for each other, i.e., the plurality of stamping portions 70 are spaced from the first interval (II) to the second interval (12), and the plurality of microdevices 1 (It can be spaced from the first interval (II) to the second interval (12) with a plurality of stamping portions (70).
  • the device 1 ( ⁇ is adhered and the base 50 is placed in the second state (when the base 50 is in the second state (50 ratio), the micro device 1 is placed as the target substrate, but is not limited thereto, and the base 50 is in the second state)
  • the micro device 1 may be adhered to, and when the base 50 is in the first state 50, the micro device 1 may be arranged as a target substrate.
  • the transfer device 40 transforms the base 50 into a first state (50 ⁇ to a second state 501), moves to the target substrate 20, and adheres to the target substrate 20 as well.
  • Micro device 1 ⁇ can be placed. In this embodiment, micro
  • Microdevices (1(1A, 1 ⁇ 10(Urine)) may include 10, sensors, etc.
  • This transfer device 40 is capable of innovative large-scale parallel transfer by aligning and accurately transferring a large number of devices on the manufacturing board to the target board, the device board.
  • Figure 7 shows the microdevice transfer process according to an embodiment of the present invention.
  • FIG. 8 is a diagram showing microdevices arranged on a target substrate through a transfer device according to an embodiment of the present invention.
  • Micro 1 high school 1) may include multiple first to 4 micro 1 high school 1) (1 ( ⁇ , 1 ah, 10. 10 (urine)) .
  • the 1st to 4th micro 1st high school 1) can be configured to generate red, green, blue, and white light, respectively.
  • Manufacturing substrates multiple 1st to 4th micros arranged at the first interval (II) in 10 ⁇ ) 1 ⁇ 1)(1(1A, 10 ⁇ 10(Urine)) can be separated by the second interval (12) while the base (50) operates in the first state (50 ⁇ to the second state (501))
  • Multiple agendas separated by the second interval (12) 1 to 4 micro 1 high school 1) (1 (1 ah, 10. ⁇ 10 (urine))
  • the transfer device 40 can be applied to the target substrate 20 of the same type.
  • Micro 1 high school 1) can be arranged at once, and the spacing between 1) within a plurality of micros that are adhered can be arbitrarily adjusted, i.e., the transfer device 40 is a target board for a large number of B 1) devices. Can be transferred in large-scale parallel to the container plate.
  • Figures to 9 (1 is a view showing the first to fourth states of the transfer device according to an embodiment of the present invention.
  • the transfer device 40 can be arranged to be bendable.
  • the transfer device 40 is bendable.
  • Material may include.
  • the specific material of the transfer device 40 is not limited.
  • This transfer device 40 can be used even if at least a portion of the target substrate 20 contains curved surfaces.
  • Microdevices can be configured to be bendable to enable transfer of 1 round.
  • the transfer device 40 may be formed in the first state (50 ⁇ in a flat shape) as shown in Fig., and may be unfolded in the second state (5 (3 ⁇ 4)) as in Fig. %.
  • the transfer device 40 is a third
  • the transfer device 40 is bendable, it is possible to precisely transfer a micro device (1 or micro 1 high 1) onto a substrate having a three-dimensional structure such as a flexible substrate and a stretchable substrate. Precise transfer is possible even on substrates for body-attached devices that can be applied to the body.
  • FIGS. 10 and 11 are front views of a transfer device according to another embodiment of the present invention.
  • the transfer device 140 may include a plurality of stamping portions 70 arranged in a first state (150 to a first interval (II) and arranged in a second state (150 to a second interval 12).
  • Intervals 1 and 2 may include the first and second horizontal intervals (11) and the first and second vertical intervals (11 ⁇ and 12 ratios).
  • the plurality of stamping portions 70 may be configured to be larger than the second horizontal interval (12 ⁇ now the second vertical interval 121). That is, the base 150 is in the second state (the degree of deformation in the horizontal direction from the 150 ratio) It can be configured to be different from the deformation degree in the vertical direction. Through this configuration, it is possible to change the density or orientation of the microdevice (1) to be mounted.
  • the target substrate 20 of various designs can be designed through such a transfer device (140). have.
  • the transfer device 140 is shown in Fig. 10 in the first state (150 ⁇ to the first horizontal interval (11 ⁇ and the first vertical interval (11 non-moving), but is not limited thereto, and the first
  • the first horizontal interval (11 ⁇ as the first vertical interval) (11 ratio can be configured to be different.
  • the transfer device 140 in FIG. 11 is shown as an example that is configured to be larger than the second state (150 ratio to the second horizontal interval (12 ⁇ is the second vertical interval 121)). It is not limited and may be configured to be smaller than the second horizontal interval (12 ⁇ now the second vertical interval 121).
  • the explanation is given as a horizontal interval in a horizontal direction and a vertical interval in a vertical direction, but is not limited thereto, i.e., a first direction interval in one direction and a second direction interval in one direction and the other direction. It may be configured to be different.
  • FIG. 12 and 13 are front views of a transfer device according to another embodiment of the present invention.
  • the transfer device 240 may include a plurality of stamping portions 70 arranged in a first state (250 to a first interval (11 1115) and a second state (250 to a second interval (12 to 12 ratios). have.
  • the transfer device 240 may include a first plurality of stamping portions 70 of the first section 51 and a second plurality of stamping portions 70 of the second section 52. 2020/175814 1»(:1 ⁇ 1 ⁇ 2020/001706
  • the first and second plurality of stamping portions 70 can have different spaced intervals between them. That is, the first plurality of stamping portions 70 have the base 250 being the second phase.
  • the spacing can be separated by 12 ratios.
  • the second 3 ⁇ 4 spacing may be configured to be different. That is, the base 250 may be arranged so that some sections are different from the spacing of the stamping section 70 with the other section.
  • the first plurality of stamping portions 70 of the first section 51 are arranged to have a narrower spacing than the second plurality of stamping portions 70 of the second section 52. However, limited to this. In addition, if the plurality of stamping portions 70 are arranged to have different spacing in at least some areas, this is satisfied. In addition, the first plurality of stamping portions 70 are only in the horizontal direction compared to the second plurality of stamping portions 70. Although shown and described to have different intervals, it is not limited thereto and may be configured to be different in different directions.
  • the transfer device 240 can be applied to each area of the target substrate 20.
  • the device (1 ( ⁇ ) density can be varied.
  • Second state 54 Base body

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Device Packages (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

A transfer device comprises a base and a plurality of stamping units arranged on the base, wherein the base has an auxetic structure having a negative Poisson's ratio. Micro devices can be mass-transferred by means of a transfer device having an auxetic structure. In addition, a transfer process can be easily performed even when the shape and the size of a target substrate vary.

Description

WO 2020/175814 PCT/KR2020/001706 명세서 WO 2020/175814 PCT/KR2020/001706 Specification
발명의 명칭:전사장치 Name of invention: transfer device
기술분야 Technical field
[1] 본발명은전사장치에관한것으로,보다상세하게는대량전사가가능한 [1] The present invention relates to a transfer device, and in detail, mass transfer is possible.
전사장치에관한것이다. It is about the transfer device.
배경기술 Background
[2] 반도체로예시될수있는마이크로디바이스는높은속도의발전을거듭하여 현대산업에필수불가결한기기로자리잡고있다. [2] Microdevices, which can be exemplified as semiconductors, continue to develop at a high speed and are positioned as indispensable devices in the modern industry.
[3] 마이크로디바이스중일례로마이크로발광다이오드 (pLED)는고효율소자를 이용한고밀도디스플레이기술로서,기존디스플레이소자보다초소형화, 경박화된고효율,고내구성디바이스구현이가능하게한다. [3] Micro light-emitting diode (pLED) is a high-density display technology that uses high-efficiency devices, as an example of micro-devices, and makes it possible to realize ultra-miniature, light-weight, high-efficiency, and high-durability devices.
[4] 특히 ,초현실구현을위한가상현실 (VR)디바이스의 5 cm미만의짧은 [4] Shorter than 5 cm of virtual reality (VR) devices, especially for surreal implementation
시청거리에서는훨씬선명하고 (1000 ppi이상)반응속도가빠른 (nanosecond) HLED소자가필수적이다. For viewing distance, a much clearer (more than 1000 ppi) and fast (nanosecond) HLED device is essential.
[5] 고해상도 ^iLED디스플레이제작을위해서는 1억개가넘는적 ,녹,청색의 [5] For the production of high resolution ^iLED displays, more than 100 million red, green and blue
초소형 ^iLED소자를구동회로기판에정밀하고빠르게정렬및전사해야한다. Ultra-compact ^iLED devices must be precisely and quickly aligned and transferred to the driving circuit board.
[6] 이를위한다양한전사공정기술이연구되었으나,아직까지극소량의소자를 개별적으로배열하여전사하는느린공정에기반하기때문에생산비용이매우 높은상황이다. [6] Various transfer process technologies have been studied for this, but production cost is very high because it is based on a slow process of individually arranging and transferring a very small number of devices.
[7] 따라서,제조기판에있는대량의 ^iLED소자들을목표기판인디바이스용 [7] Therefore, a large amount of ^iLED devices on the manufacturing board are used for the target board, the device.
기판에한꺼번에정렬하고정밀하게전사시키는혁신적인대규모병렬 공정기술의개발이매우중요하다. The development of innovative large-scale parallel process technology that aligns and transfers precisely to the substrate at once is very important.
발명의상세한설명 Detailed description of the invention
기술적과제 Technical task
[8] 본발명의일측면은대량전사가가능한전사장치를제공한다. [8] One aspect of the present invention provides a transfer device capable of mass transfer.
[9] 본발명의일측면은전사간격을달리할수있는전사장치를제공한다. [9] One aspect of the present invention provides a transfer device capable of running the transfer interval.
과제해결수단 Problem solving means
[1이 본발명의사상에따른전사장치는베이스;상기베이스에마련되는복수의 스탬핑부;를포함하고,상기베이스는음의프아송비를갖는 [1] The transfer device according to the idea of the present invention includes a base; a plurality of stamping portions provided on the base, wherein the base has a negative Poisson's ratio.
오그제틱 (auxetic)구조를포함한다. Includes an auxetic structure.
[11] 상기베이스는,제 1상태와,상기복수의스탬핑부가상호간에이격되도록 상기제 1상태로부터확장된제 2상태를동작할수있다. [11] The base may operate in a first state and a second state extended from the first state so that the plurality of stamping portions are spaced apart from each other.
[12] 상기복수의스탬핑부는,상기베이스가상기제 1상태에 있을때,상호간에제 [12] The plurality of stamping parts, when the base is in the first state,
1간격이격되고,상기베이스가상기제 2상태에있을때,상호간에상기제 1 간격보다큰제 2간격이격되도록구성될수있다. It may be configured to be spaced apart by one interval, and to be spaced apart from each other by a second interval larger than the first interval when the base is in the second state.
[13] 상기복수의스탬핑부는,상기베이스가상기제 1상태일때 ,상기제 1 2020/175814 1»(:1^1{2020/001706 간격으로배열되는대상기판의마이크로디바이스들을점착하여분리시키고, 상기 베이스가상기 제 2상태에 있을때,상기제 2간격으로목표기판에상기 점착된마이크로디바이스들을배치시키도록구성될수있다. [13] The plurality of stamping parts, when the base is in the first state, the first 2020/175814 1» (:1^1{2020/001706) The microdevices of the target substrate arranged at intervals of 2020/001706 are adhered and separated, and when the base is in the second state, the adhered to the target substrate at the second interval It can be configured to place microdevices.
[14] 상기마이크로디바이스는마이크로 1고1)를포함할수있다. [14] The above micro device may include micro first high school 1).
[15] 상기제 2간격은가로방향과제 2가로간격과,세로방향의 제 2세로간격을 포함하고,상기복수의스탬핑부는,상기 베이스가상기 제 2상태일때,상기 제 2가로간격과,상기제 2가로간격과다른제 2세로간격으로이격되도록구성될 수있다. [15] The second interval includes a horizontal direction and a second horizontal interval, and a second vertical interval in the vertical direction, and the plurality of stamping portions, when the base is in the second state, the second horizontal interval and the It can be configured to be spaced at a second vertical interval different from the second horizontal interval.
[16] 상기 베이스는,제 1구간과,상기 제 1구간과인접한제 2구간;을포함하고, 상기복수의스탬핑부는,상기 베이스의제 1구간에 배치되는제 1복수의 스탬핑부와,상기 제 1구간과인접한상기 베이스의 제 2구간에 배치되는제 2 복수의스탬핑부;를포함하고,상기 제 1복수의스탬핑부는상기 베이스가상기 제 2상태일때,상기제 2복수의스탬핑부보다이격간격이 작게배치되도록 구성될수있다. [16] The base includes a first section, and a second section adjacent to the first section, wherein the plurality of stamping parts, a first plurality of stamping parts disposed in the first section of the base, and the Including a second plurality of stamping portions disposed in the second section of the base adjacent to the first section, wherein the first plurality of stamping portions are spaced apart from the second plurality of stamping portions when the base is in the second state It can be configured so that the spacing is small.
[17] 상기 베이스는,상기 제 2상태에서 적어도일부가곡면을포함하도록구성될 수있다. [17] The base may be configured to include at least a portion of the curved surface in the second state.
[18] 상기 베이스는벤딩가능하도록구성될수있다. [18] The base may be configured to be bendable.
[19] 상기복수의스탬핑부는점착성재질을포함할수있다. [19] The plurality of stamping portions may include an adhesive material.
[2이 상기 베이스와상기복수의스탬핑부는일체로형성될수있다. [2] The base and the plurality of stamping portions may be integrally formed.
발명의효과 Effects of the Invention
[21] 본발명의 일측면에 따르면오그제틱( 노)구조를이용하여마이크로 디바이스의 대량전사가가능하다. [21] According to one aspect of the present invention, mass transfer of micro-devices is possible by using an augitive (noh) structure.
[22] 본발명의 일측면에 따르면목표기판의 형상및크기를달리하여도손쉽게 전사공정을실행할수있다. [22] According to one aspect of the present invention, the transfer process can be easily carried out even if the shape and size of the target substrate are different.
[23] 본발명의 일측면에 따르면제조기판에서 제조되는마이크로디바이스의 간격과목표기판에서의요구되는마이크로디바이스의 간격을달리하여도 전사장치를통해전사가가능하다. [23] According to one aspect of the present invention, it is possible to transfer through the transfer device even if the spacing of the microdevices manufactured on the manufacturing substrate and the spacing of the microdevices required on the target substrate are different.
[24] 본발명의 일측면에 따르면목표기판의 적어도일부가곡면을포함하는 [24] According to one aspect of the present invention, at least a portion of the target substrate includes a curved surface.
경우에도전사대상물의 전사가가능하다. Even in the case, it is possible to transfer the transfer object.
도면의간단한설명 Brief description of the drawing
[25] 도 1은본발명의 일실시예에 따른전사장치와제조기판의사시도. 1 is a perspective view of a transfer device and a manufacturing substrate according to an embodiment of the present invention.
[26] 도 2 ¾는본발명의 일실시예에따른전사장치의정면도. [26] Figure 2 ¾ is a front view of the transfer device according to an embodiment of the present invention.
[27] 도 3 31), 30, 3(1는본발명의 일실시예에따른전사장치의 개념도. [27] Fig. 3 31), 30, 3 (1 is a conceptual diagram of a transfer device according to an embodiment of the present invention.
[28] 도 4a 는본발명의 일실시예에따른전사장치가제조기판으로부터 [28] Figure 4a is a transfer device according to an embodiment of the present invention from the manufacturing substrate
마이크로디바이스들을떼어내는동작에 관한도면. Drawings on the operation of removing microdevices.
[29] 도 5 는본발명의 일실시예에따른전사장치의제 1, 2상태에 관한도면. 5 is a view of the first and second states of the transfer device according to an embodiment of the present invention.
[3이 도 6 해는본발명의 일실시예에따른전사장치가마이크로디바이스들을 목표기판에배치하는동작에관한도면. [3] Figure 6 shows that the transfer device according to an embodiment of the present invention uses microdevices. Drawings on the operation to be placed on the target substrate.
[31] 도 7은본발명의일실시예에따른마이크로디바이스의전사과정을 7 is a diagram illustrating a microdevice transfer process according to an embodiment of the present invention.
개략적으로도시한도면. Schematic drawing.
[32] 도 8은본발명의일실시예에따른전사장치를통해마이크로디바이스들을 목표기판에배치한도면. 8 is a view showing microdevices arranged on a target substrate through a transfer device according to an embodiment of the present invention.
[33] 도 9a내지 9d는본발명의일실시예에따른전사장치의제 1내지 4상태를 도시한도면. 9A to 9D are views showing first to fourth states of the transfer device according to an embodiment of the present invention.
[34] 도 10, 11은본발명의다른실시예에따른전사장치의정면도. 10 and 11 are front views of a transfer device according to another embodiment of the present invention.
[35] 도 12, 13은본발명의또다른실시예에따른전사장치의정면도. 12 and 13 are front views of a transfer device according to another embodiment of the present invention.
발명의실시를위한최선의형태 Best mode for carrying out the invention
[36] 본명세서에기재된실시예와도면에도시된구성은개시된발명의바람직한 일예에불과할뿐이며,본출원의출원시점에있어서본명세서의실시예와 도면을대체할수있는다양한변형예들이 있을수있다. [36] The configuration shown in the embodiments and drawings in this specification is only a preferred example of the disclosed invention, and there may be various modifications that can replace the embodiments and drawings in this specification at the time of filing of this application.
[37] 또한,본명세서의각도면에서제시된동일한참조번호또는부호는 [37] In addition, the same reference number or code presented in each drawing of this specification
실질적으로동일한기능을수행하는부품또는구성요소를나타낸다. It represents a part or component that performs substantially the same function.
[38] 또한,본명세서에서사용한용어는실시예를설명하기위해사용된것으로, 개시된발명을제한및/또는한정하려는의도가아니다.단수의표현은문맥상 명백하게다르게뜻하지않는한,복수의표현을포함한다.본명세서에서, "포함하다”또는 "가지다”등의용어는명세서상에기재된특징,숫자,단계, 동작,구성요소,부품또는이들을조합한것이존재함을지정하려는것이지 , 하나또는그이상의다른특징들이나숫자,단계,동작,구성요소,부품또는 이들을조합한것들의존재또는부가가능성을미리배제하지않는다. [38] In addition, the terms used in this specification are used to describe the embodiments and are not intended to limit and/or limit the disclosed invention. A singular expression refers to a plural expression unless the context clearly indicates otherwise. In this specification, terms such as "include" or "have" are intended to designate the existence of a feature, number, step, action, component, part, or combination of those listed in the specification. It does not preclude the presence or addition of other features, numbers, steps, actions, components, parts, or combinations thereof.
[39] 또한,본명세서에서사용한“제 1”,“제 2”등과같이서수를포함하는용어는 다양한구성요소들을설명하는데사용될수있지만,상기구성요소들은상기 용어들에의해한정되지는않으며,상기용어들은하나의구성요소를다른 구성요소로부터구별하는목적으로만사용된다.예를들어,본발명의권리 범위를벗어나지않으면서제 1구성요소는제 2구성요소로명명될수있고, 유사하게제 2구성요소도제 1구성요소로명명될수있다.“및/또는”이라는 용어는복수의관련된기재된항목들의조합또는복수의관련된기재된항목들 중의어느항목을포함한다. [39] In addition, terms including ordinal numbers such as “first” and “second” used in this specification may be used to describe various elements, but the above elements are not limited by the above terms. The terms are only used for the purpose of distinguishing one component from other components; for example, without departing from the scope of the rights of the present invention, the first component may be named the second component, similarly the second component Apprenticeship 1 component may be named. The term "and/or" includes any combination of a plurality of related items or any of a plurality of related items.
[4이 또한, 부”,”〜기 ", 블록”, 부재 ", 모듈”등의용어는적어도하나의 [4] Also, terms such as "part","~group", block", member", module" are at least one
기능이나동작을처리하는단위를의미할수있다.예를들어,상기용어들은 FPGA (field-programmable gate array)/ ASIC (application specific integrated circuit) 등적어도하나의하드웨어,메모리에저장된적어도하나의소프트웨어또는 프로세서에의하여처리되는적어도하나의프로세스를의미할수있다. It can refer to a unit that processes a function or operation; for example, the terms above are at least one hardware, such as field-programmable gate array (FPGA)/application specific integrated circuit (ASIC), or at least one software or processor stored in memory. It can mean at least one process processed by.
[41] 이하에서는본발명에따른실시예를첨부된도면을참조하여상세히 [41] In the following, an embodiment according to the present invention is described in detail with reference to the attached drawings.
설명한다. [42] 도 1은본발명의일실시예에따른전사장치와제조기판의사시도,도 2a, 2b는 본발명의일실시예에따른전사장치의정면도이다. Explain. 1 is a perspective view of a transfer device and a manufacturing substrate according to an embodiment of the present invention, and FIGS. 2A and 2B are front views of a transfer device according to an embodiment of the present invention.
[43] 전사장치 (40, transferring apparatus)는전사대상물을이동및배치하도록 [43] A transferring apparatus 40 is used to move and place transfer objects.
마련된다.전사대상물은마이크로디바이스 (10aa)를포함할수있다.구체적으로 전사대상물은마이크로 LED를포함할수있다.본실시예에서는전사대상물이 마이크로 LED인것을예로들지만,그대상물은한정되지않는다. The transfer object may include a micro device 10aa. Specifically, the transfer object may include a micro LED. In the present embodiment, the transfer object is a micro LED, but the object is not limited.
[44] 전사장치 (40)는베이스 (50)와,복수의스탬핑부 (70)를포함할수있다. [44] The transfer device 40 may include a base 50 and a plurality of stamping portions 70.
[45] 베이스 (50)는오그제틱 (auxetic)구조로형성될수있다.오그제틱구조는음의 프아송비 (Poisson's ratio, V)로구성될수있다.프아송비는재료내부에생기는 수직응력에의한가로변형과세로변형과의비로서,다음을만족할수있다. [45] The base 50 can be formed in an auxetic structure. The augmented structure can be made up of a negative Poisson's ratio (V). The Poisson's ratio is horizontally caused by the vertical stress created in the material. As a ratio of deformation to vertical deformation, the following can be satisfied.
[46] = -세로변형도/가로변형도 [46] = -Vertical Deformation/Horizontal Deformation
[47] 음의프아송비는가로방향와세로방향중어느하나의방향으로양의 (또는 음의 )변형변위가발생할때 ,다른하나의방향으로도양의 (또는음의 ) 변형변위가발생하는것을의미한다. [47] A negative Poisson's ratio means that when a positive (or negative) deformation displacement occurs in one of the horizontal and vertical directions, a positive (or negative) deformation displacement occurs in the other direction. do.
[48] 베이스 (50)는탄성을가진재질을포함할수있다.베이스 (50)의오그제틱 [48] The base 50 may comprise a material having elasticity.
구조는탄성을가진재질로구성되어,외력에의해벤딩되거나변형시에 원상태로복원되도록구성될수있다. The structure is made of a material having elasticity, and can be constructed to be bent by an external force or to be restored to its original state when deformed.
[49] 복수의스탬핑부 (70)는전사대상물을떼어내거나,배치하도록마련될수있다. 스탬핑부 (70)는점착력을갖도록구성될수있다.복수의스탬핑부 (70)는 마이크로디바이스 (10aa)에점착되어제조기판 (10a)으로부터떼어내어, 목표기판 (20)에서목표된위치에배치할수있다.복수의스탬핑부 (70)와 베이스 (50)는일체로형성될수있다.제조기판 (10a)과목표기판 (20)의종류는 한정되지않는다.제조기판 (10a)과목표기판 (20)은디바이스용기판또는 인터포저를포함할수있다. [49] A plurality of stamping portions 70 may be arranged to remove or place the transfer object. The stamping portion 70 may be configured to have an adhesive force. A plurality of stamping portions 70 may be adhered to the microdevice 10aa to be removed from the manufacturing substrate 10a and placed at a target position on the target substrate 20. The plurality of stamping portions 70 and the base 50 may be integrally formed. The type of the manufacturing board 10a and the target board 20 is not limited. The manufacturing board 10a and the target board 20 May include a device board or interposer.
[5이 복수의스탬핑부 (70)는점착력이 있는탄성중합체재질을포함할수있다. 그러나이에한정되지않고,점착력이있는재질이면이를만족한다.일례로, 베이스 (50)와복수의스탬핑부 (70)는동일한재질로구성될수도있다. [5] The plurality of stamping portions 70 may include an elastomer material having adhesive force. However, it is not limited thereto, and any material having adhesive force is satisfied. For example, the base 50 and the plurality of stamping portions 70 may be made of the same material.
[51] 전사장치 (40)는벤딩가능한재질로구성될수있다.즉,이후설명하는바와 같이,전사장치 (40)는목표기판 (20)의적어도일부가곡면을포함하고있어도 마이크로디바이스 (10aa)의전사가가능하도록벤딩가능하게구성될수있다. 전사장치 (40)의구체적인재질은한정되지않는다. [51] The transfer device 40 may be made of a bendable material. That is, as will be described later, the transfer device 40 can transfer the microdevice 10aa even if at least a portion of the target substrate 20 includes a curved surface. It can be configured to be bendable so that it can be used. The specific material of the transfer device 40 is not limited.
[52] 베이스 (50)는제 1상태 (50a,도 2a참고)와,제 1상태 (50a)로부터펼쳐진제 2 상태 (50b,도 2b참고)를동작할수있다.베이스 (50)는제 2상태 (50b)에서제 1 상태 (50a)보다확장되도록구성될수있다. [52] The base 50 can operate in a first state (50a, see Fig. 2a) and a second state (see 50b, Fig. 2b) unfolded from the first state 50a. The base 50 is in a second state ( In 50b), it can be configured to extend beyond the first state 50a.
[53] 베이스 (50)가제 1상태 (50a)일때,복수의스탬핑부 (70)는도 2a와같이제 1 간격 (II)을가지고이격될수있다.베이스 (50)가제 2상태 (50b)일때,복수의 스탬핑부 (70)는도 2b과같이제 1간격 (II)보다큰제 2간격 (12)으로이격될수 있다.간격의기준은도 2a, 2b와같이복수의스탬핑부 (70)의중심간의거리일수 2020/175814 1»(:1^1{2020/001706 있다.그러나이에한정되지않고간격의기준은복수의스탬핑부 (70)간의 거리일수도있다. [53] When the base 50 is in the first state (50a), the plurality of stamping portions 70 can be spaced apart at the first interval (II) as shown in Fig. 2A. When the base 50 is in the second state (50b) ,The plurality of stamping portions 70 may be spaced apart by a second interval 12 that is larger than the first interval (II) as shown in FIG. 2B. The standard of the interval is the center of the plurality of stamping portions 70 as shown in FIGS. 2A and 2B. Distance between days 2020/175814 1»(:1^1{2020/001706 There is, however, it is not limited to this, and the criterion of the spacing may be the distance between the plurality of stamping parts (70).
[54] 이러한구성을통해도 와같이전사장치 (40)는제조기판 ( )에제 1 [54] Even through this configuration, the transfer device 40 is the first
간격 (II)으로배열된마이크로디바이스 (1 幻를점착하여,도 와같이 목표기판 (20)에서제 1간격 (II)과큰제 2간격 (12)으로배치된목표지점에 배치시킬수있다. Microdevices (1 幻) arranged at intervals (II) can be adhered to the target points arranged at the first interval (II) and the larger second interval (12) on the target substrate 20 as shown in the figure.
[55] 베이스 (50)는복수의베이스바디 (54)와,복수의베이스바디 (54)를연결하는 [55] The base (50) connects multiple base bodies (54) and multiple base bodies (54).
복수의레그 (56)를포함할수있다. It may contain a plurality of legs (56).
[56] 복수의베이스바디 (54)와복수의레그 (56)는도 2 ¾에서와같이상호연결될 수있도록구성될수있다. [56] A plurality of base bodies 54 and a plurality of legs 56 may be configured to be interconnected as shown in Fig. 2 ¾.
[57] 복수의베이스바디 (54)의일면에는스탬핑부 (70)가마련될수있다. [57] A stamping portion 70 may be provided on one surface of the plurality of base bodies 54.
스탬핑부 (70)는복수의베이스바디 (54)의일면으로부터돌출구조로형성될수도 있으며,베이스바디 (54)의일면과일체의점착면을형성할수도있다.복수의 스탬핑부 (70)는베이스바디 (54)에위치하는것으로설명하나,이에한정되지 않는다.복수의스탬핑부 (70)는복수의레그 (56)에형성될수도있다. The stamping portion 70 may be formed in a protruding structure from one surface of the plurality of base bodies 54, and may form an adhesive surface integrally with one surface of the base body 54. The plurality of stamping portions 70 may be formed of a base body 54. It is described as being located on the body 54, but is not limited thereto. A plurality of stamping portions 70 may be formed on a plurality of legs 56.
[58] 복수의레그 (56)는복수의베이스바디 (54)로부터연장되도록구성될수있다. 복수의레그 (56)는복수의베이스바디 (54)와일체로형성될수있다.본 [58] The plurality of legs 56 may be configured to extend from the plurality of base bodies 54. The plurality of legs 56 may be formed integrally with the plurality of base bodies 54.
실시예에서는베이스바디 (54)는그둘레를따라배치되는 4개의레그 (56)가 연결되도록마련된다.그러나베이스바디 (54)와레그 (56)의형상은한정되지 않으며베이스 (50)가오그제틱구조로형성되면이를만족한다. In the embodiment, the base body 54 is provided so that four legs 56 arranged along its periphery are connected. However, the shape of the base body 54 and the leg 56 is not limited, and the base 50 is an augitive structure. It is satisfied when it is formed as.
[59] 도 에서와같이베이스 (50)가제 1상태 (50幻에있을때는복수의레그 (56)와 복수의베이스바디 (54)는구획선을두고배치되고,베이스 (50)가제 2 [59] As shown in the figure, when the base 50 is in the first state (when it is in the 50 幻, the plurality of legs 56 and the plurality of base bodies 54 are arranged with a division line, and the base 50 is the second
상태 (50비에있을때는구획선이벌어지도록구성될수있다.그러나이에 한정되지않고,구획선부분에벤딩가능한가이드부 (미도시)가마련될수있다. 즉,가이드부는일측은베이스바디 (54)에타측은레그 (56)와연결될수있다. 가이드부는베이스 (50)가제 1상태 (50幻에있을때는접힌상태로있고,제 2 상태 (50비에있을때는펴지도록구성될수있다.가이드부를통해베이스 (50)가 일정상태이상으로펴지는것을방지할수있다. State (when in the 50 ratio, the division line may be configured to open. However, it is not limited thereto, and a bendable guide portion (not shown) may be provided in the division line portion. It can be connected with the leg 56. The guide part can be configured to be in a folded state when the base 50 is in the first state (50幻, and unfold when in the second state (50 ratio). The base 50 through the guide part ) Can be prevented from spreading beyond a certain state.
[6이 본실시예에서오그제틱구조는일례로서 ,도 2 ¾과같은형상을예로들었다. 그러나이에한정되지않고,다양한형상의오그제틱구조가적용될수있다. 또한본실시예에서베이스 (50)는구조적으로음의프아송비를구현되는구조를 설명하였으나,이에한정되지않는다.일례로베이스 (50)는재료의특성에의해 음의프아송비가구현될수도있다. [6] As an example, the augitive structure in this embodiment is a shape as shown in Fig. 2 ¾ as an example. However, the present invention is not limited to this, and various shapes of augmentative structure may be applied. In addition, in the present embodiment, the structure of the base 50 structurally implementing a negative Poisson's ratio has been described, but the present invention is not limited thereto. For example, the base 50 may have a negative Poisson's ratio depending on the characteristics of the material.
[61] 도 3 31), 30, 3(1는본발명의일실시예에따른전사장치의개념도이다. 31), 30, and 3 (1) are conceptual diagrams of a transfer device according to an embodiment of the present invention.
[62] 도 2 ¾에서는설명의편의를위해오그제틱스구조의일례를들어 [62] In Fig. 2 ¾, for convenience of explanation, an example of an augetics structure is given.
설명하였다.그러나도 3 31), 30, 3(1에서와같이가로변형율과세로변형율이 또는가로변형율,세로변형율,높이변형율이함께증가또는감소하는구조이면 이를만족한다. 2020/175814 1»(:1^1{2020/001706 However, as shown in Figs. 31), 30, and 3 (1), this is satisfied if the horizontal strain rate and the vertical strain rate are a structure in which the horizontal strain rate, the vertical strain rate, and the height strain rate increase or decrease together. 2020/175814 1»(:1^1{2020/001706
[63] 도 3 걔는가로변형율과세로변형율이함께증가또는감소하는 [63] Figure 3 shows that the horizontal strain rate and the vertical strain rate increase or decrease together.
오그제틱스구조의개념도이다.전사장치 (140)의베이스 (150)는도 와같이제 1상태 (150幻에서,도 와같이제 2상태 (150비로확장될수있다. It is a conceptual diagram of an augetics structure. The base 150 of the transfer device 140 can be extended from a first state (150幻) as shown in Fig. and a second state (150 ratio) as shown in Fig.
[64] 도 는다층적인오그제틱스구조에관한것이다.앞서설명한예들은 2차원적 오그제틱스구조를일례로들었으나,도 에서와같이, 3차원적으로 [64] also relates to a multi-layered augetics structure. The examples described above take a two-dimensional augetics structure as an example, but as in Fig.
높이변형율도함께증가또는감소하도록변형될수있다.즉전사장치 (240)의 베이스 (250)는가로변형율,세로변형율,높이변형율이함께증가또는감소하는 오그제틱스구조일수있다. The height strain rate may also be deformed to increase or decrease. That is, the base 250 of the transfer device 240 may be an augetic structure in which the horizontal strain rate, the vertical strain rate, and the height strain rate increase or decrease together.
[65] 도 3(1는계층적인오그제틱스구조에관한것이다.도 의경우에는복수의 각층이동일한오그제틱스구조로구성되나,도 3(1에서는각층이서로다른 구조의오그제틱스구조로구성될수있다. [65] Fig. 3 ( 1 shows a hierarchical augetics structure. In the case of Fig., a plurality of each layer is composed of the same augetics structure, but in Fig. 3 (1, each layer can be composed of a different augetics structure) have.
[66] 전사장치 (340)는서로구조가다른베이스들 (351, 352, 353)을포함할수있다. 서로다른베이스들 (351, 352, 353)은함께증가또는감소하는오그제틱스구조로 구성될수있다.그러나서로다른베이스들 (351, 352, 353)은상호간의 가로변형율,세로변형율,높이변형율의크기를달리할수있다. [66] The transfer device 340 may include bases 351, 352, 353 having different structures from each other. Different bases (351, 352, 353) can be configured with an augitive structure that increases or decreases together; however, different bases (351, 352, 353) have the size of the lateral strain, vertical strain, and height strain. Can run.
[67] 이하는본발명의전사장치의동작에관하여설명한다. [67] The following describes the operation of the transfer device of the present invention.
[68] 도 4a, 는본발명의일실시예에따른전사장치가제조기판으로부터 [68] Figure 4a, is a transfer device according to an embodiment of the present invention from the manufacturing substrate
마이크로디바이스들을떼어내는동작에관한도면,도 5 ¾는본발명의일 실시예에따른전사장치의제 1, 2상태에관한도면,도 6&,해는본발명의일 실시예에따른전사장치가마이크로디바이스들을목표기판에배치하는동작에 관한도면이다. A drawing on the operation of removing the microdevices, Fig. 5 ¾ is a drawing on the first and second states of the transfer device according to an embodiment of the present invention , and Fig. 6 &, the transfer device according to an embodiment of the present invention is It is a drawing on the operation of arranging microdevices on a target board.
[69] 전사장치 (40)는베이스 (50)가제 1상태 (50幻로동작할때제조기판 ( )에 접촉하여,복수의스탬핑부 (70)를통해제조기판 (1(切)의복수의마이크로 디바이스 (1(^)와점착할수있다.도 와같이제조기판 (10幻에배치된 마이크로디바이스 (1( 를전체적으로점착할수도있으며,도 와같이 제조기판 (10 의일부영역의마이크로디바이스 (1( 만점착할수도있다. 이 이후베이스 (50)는도 5 와같이제 1상태 (50幻에서제 2상태 (501))로동작할 수있다.이과정에서복수의스탬핑부 (70)에각각점착된복수의마이크로 디바이스 (1 는상호간에요구되는간격으로이격될수있다.즉,복수의 스탬핑부 (70)는제 1간격 (II)에서제 2간격 (12)으로이격되고,복수의마이크로 디바이스 (1( 幻도복수의스탬핑부 (70)와함께제 1간격 (II)에서제 2 간격 (12)으로이격될수있다. [69] The transfer device 40 is in contact with the manufacturing substrate () when the base 50 is operated in the first state (50 幻), and through a plurality of stamping portions 70 , a plurality of microcircuits of the manufacturing substrate (1 (切) It is possible to adhere to the device 1(^). As shown in the figure, the microdevice 1( placed on the manufacturing substrate 10 can be entirely adhered, and as shown in the figure, the microdevice 1( After this, the base 50 can be operated in the first state (from 50 to the second state 501) as shown in Fig. 5. In this process, each of the plurality of stamping portions 70 is adhered to each other. The plurality of microdevices 1 can be spaced apart at a distance required for each other, i.e., the plurality of stamping portions 70 are spaced from the first interval (II) to the second interval (12), and the plurality of microdevices 1 (It can be spaced from the first interval (II) to the second interval (12) with a plurality of stamping portions (70).
[71] 설명의편의를위해베이스 (50)가제 1상태 (50幻일때,마이크로 [71] For convenience of explanation, when the base (50) is in the first state (50幻, micro
디바이스 (1(切幻가점착되고,베이스 (50)가제 2상태 (50비일때마이크로 디바이스 (1 는목표기판으로배치되는것을설명하였다.그러나이에 한정되지않고,이와반대로베이스 (50)가제 2상태 (501))일때,마이크로 디바이스 (1(切幻가점착되고,베이스 (50)가제 1상태 (50幻일때마이크로 디바이스 (1 는목표기판으로배치될수도있다. 2020/175814 1»(:1^1{2020/001706 It has been described that the device 1 (切幻 is adhered and the base 50 is placed in the second state (when the base 50 is in the second state (50 ratio), the micro device 1 is placed as the target substrate, but is not limited thereto, and the base 50 is in the second state) In the case of 501), the micro device 1 may be adhered to, and when the base 50 is in the first state 50, the micro device 1 may be arranged as a target substrate. 2020/175814 1»(:1^1{2020/001706
[72] 전사장치 (40)는베이스 (50)를제 1상태 (50幻에서제 2상태 (501))로변형시키고, 목표기판 (20)으로이동되어,목표기판 (20)에도 와같이점착된마이크로 디바이스 ( 1(切幻를배치시킬수있다.본실시예에서마이크로 [72] The transfer device 40 transforms the base 50 into a first state (50幻 to a second state 501), moves to the target substrate 20, and adheres to the target substrate 20 as well. Micro device 1 (切幻 can be placed. In this embodiment, micro
디바이스 (1( 山1아 , 1此山 10(뇨)는마이크로 1止1)를포함하며,각각파랑,초록, 빨강,백색의마이크로 1止1)를각각적용할수있다.그러나이에한정되지않고, 마이크로디바이스 (1( 1아 , 1此山 10(뇨)는 10,센서등을포함할수있다. Device (1(山1 Ah, 1此山10(Urine) is 1 micro)), and 1 micro 1 of blue, green, red, white, respectively, can be applied, but is not limited thereto. , Microdevices (1(1A, 1此山10(Urine)) may include 10, sensors, etc.
이러한전사장치 (40)는제조기판에있는대량의나1고1)소자들을목표기판인 디바이스용기판에한꺼번에정렬하고정밀하게전사시키는혁신적인대규모 병렬전사가가능하다. This transfer device 40 is capable of innovative large-scale parallel transfer by aligning and accurately transferring a large number of devices on the manufacturing board to the target board, the device board.
3] 도 7은본발명의일실시예에따른마이크로디바이스의전사과정을 3] Figure 7 shows the microdevice transfer process according to an embodiment of the present invention.
개략적으로도시한도면,도 8은본발명의일실시예에따른전사장치를통해 마이크로디바이스들을목표기판에배치한도면이다. A schematic diagram, FIG. 8 is a diagram showing microdevices arranged on a target substrate through a transfer device according to an embodiment of the present invention.
4] 도 7은전사과정을개략적으로도시한도면이다.마이크로 1고1)는복수의제 1 내지 4마이크로 1고1)(1(^, 1아 , 10。 10(뇨)를포함할수있다.제 1내지 4 마이크로 1고1)는각각빨강,초록,파랑,백색광을생성하도록구성될수있다. 5] 제조기판 (10幻에서제 1간격 (II)으로배치되는복수의제 1내지 4마이크로 1止1)(1( 1아 , 10。山 10(뇨)는각각베이스 (50)가제 1상태 (50幻에서제 2 상태 (501))로동작하면서 ,제 2간격 (12)으로이격될수있다.제 2간격 (12)으로 이격된복수의제 1내지 4마이크로 1고1)(1( 1아 , 10。山 10(뇨)는 4] Figure 7 is a schematic diagram showing the transfer process. Micro 1 high school 1) may include multiple first to 4 micro 1 high school 1) (1 (^, 1 ah, 10. 10 (urine)) .The 1st to 4th micro 1st high school 1) can be configured to generate red, green, blue, and white light, respectively. 5) Manufacturing substrates (multiple 1st to 4th micros arranged at the first interval (II) in 10幻) 1止1)(1(1A, 10。山 10(Urine)) can be separated by the second interval (12) while the base (50) operates in the first state (50幻 to the second state (501)) Multiple agendas separated by the second interval (12) 1 to 4 micro 1 high school 1) (1 (1 ah, 10. 山 10 (urine))
목표기판 (20)에배치될수있다. It can be placed on the target substrate 20.
6] 이러한과정을통해전사장치 (40)는목표기판 (20)에동일한종류의복수의 6] Through this process, the transfer device 40 can be applied to the target substrate 20 of the same type.
마이크로 1고1)를한번에배열시킬수있고,또한점착되는복수의마이크로 내 1)들간의간격을임의로조절할수있게된다.즉,전사장치 (40)는대량의 나 1止1)들을목표기판인디바이스용기판에대규모병렬전사시킬수있다. Micro 1 high school 1) can be arranged at once, and the spacing between 1) within a plurality of micros that are adhered can be arbitrarily adjusted, i.e., the transfer device 40 is a target board for a large number of B 1) devices. Can be transferred in large-scale parallel to the container plate.
刀 복수의마이크로 1고1)를원하는이격거리로한번에목표기판 (20)으로 刀 Multiple micro 1 high school 1) to the target board (20) at the desired distance
배치시킬수있어서,마이크로 1고1)의대량전사가가능하게된다.또한도 8과 같이목표기판 (20)이곡면으로형성되는경우에도베이스 (50)의굴곡도를 변형하고,이격거리를조절하여대량전사가가능하게된다. Since it can be arranged, it is possible to transfer a large amount of micro 1 high school 1). In addition, even when the target substrate 20 is formed in a curved surface as shown in Fig. 8, the curvature of the base 50 is changed and the separation distance is adjusted. Mass transcription becomes possible.
8] 도 내지 9(1는본발명의일실시예에따른전사장치의제 1내지 4상태를 도시한도면이다. 8] Figures to 9 (1 is a view showing the first to fourth states of the transfer device according to an embodiment of the present invention.
9] 전사장치 (40)는벤딩가능하게마련될수있다.전사장치 (40)는벤딩가능한 9] The transfer device 40 can be arranged to be bendable. The transfer device 40 is bendable.
재질을포함할수있다.전사장치 (40)의구체적인재질은한정되지않는다. Material may include. The specific material of the transfer device 40 is not limited.
[8이 전사장치 (40)는목표기판 (20)의적어도일부가곡면을포함하고있어도 [8 This transfer device 40 can be used even if at least a portion of the target substrate 20 contains curved surfaces.
마이크로디바이스 (1 幻의전사가가능하도록벤딩가능하게구성될수있다. Microdevices (can be configured to be bendable to enable transfer of 1 round.
[81] 전사장치 (40)는도 와같이제 1상태 (50幻에서평면형상으로형성될수도 있고,도 %와같이제 2상태 (5(¾)로펼쳐질수도있다. [81] The transfer device 40 may be formed in the first state (50幻 in a flat shape) as shown in Fig., and may be unfolded in the second state (5 (¾)) as in Fig. %.
[82] 또한전사장치 (40)는도 %와같이적어도일부가곡면형성하는제 3 [82] In addition, the transfer device 40 is a third
상태 (50 로벤딩될수도있고,도 9(1와같이구형형상의제 4상태 (50(¾로벤딩될 () 2020/175814 1»(:1/10公020/001706 수도있다.설명의편의를위해제 3상태 (50 와,제 4상태 (50(¾를구분하였으나, 제 3상태 (50 와,제 4상태 (50(1)는제 2상태 (50비의일례일수있다. State (can be bent into 50, and the fourth state of a spherical shape as shown in Fig. 9 (1) () 2020/175814 1»(:1/10公020/001706 It may be possible. For convenience of explanation, the 3rd state (50 and the 4th state (50(¾), but the 3rd state (50 and The fourth state (50(1) can be an example of the second state (50 ratio).
전사장치 (40)는벤딩가능하게마련됨으로서,유연기판및스트레쳐블기판과 같은 3차원구조의기판위에정밀하게마이크로디바이스 (1 또는마이크로 1고1)를전사할수있게된다.또한굴곡이많이형성된신체에적용할수있는 신체부착형디바이스를위한기판에도정밀한전사가가능하게된다. Since the transfer device 40 is bendable, it is possible to precisely transfer a micro device (1 or micro 1 high 1) onto a substrate having a three-dimensional structure such as a flexible substrate and a stretchable substrate. Precise transfer is possible even on substrates for body-attached devices that can be applied to the body.
[84] 이하는본발명의다른실시예에따른전사장치에관하여설명한다. [84] Hereinafter, a transfer device according to another embodiment of the present invention will be described.
[85] 설명에있어서,앞서설명한구성과동일한구성에대해서는구체적인설명을 생략한다. [85] In the description, a detailed description is omitted for the same configuration as the previously described configuration.
도 10, 11은본발명의다른실시예에따른전사장치의정면도이다. 10 and 11 are front views of a transfer device according to another embodiment of the present invention.
전사장치 (140)는제 1상태 (150幻에서제 1간격 (II)으로배치되고제 2 상태 (150비에서제 2간격 (12)으로배치되는복수의스탬핑부 (70)를포함할수 있다.제 1, 2간격은제 1, 2가로간격 (11 )과제 1, 2세로간격 (11江 12비을 포함할수있다. The transfer device 140 may include a plurality of stamping portions 70 arranged in a first state (150 to a first interval (II) and arranged in a second state (150 to a second interval 12). Intervals 1 and 2 may include the first and second horizontal intervals (11) and the first and second vertical intervals (11江 and 12 ratios).
88] 복수의스탬핑부 (70)는제 2가로간격 (12幻이제 2세로간격 (121))보다크도록 구성될수있다.즉,베이스 (150)는제 2상태 (150비에서가로방향으로의 변형도가세로방향의변형도와다르도록구성될수있다.이러한구성을통해 실장되는마이크로디바이스 (1 의밀집도또는방향성을달리할수있다. 또한이러한전사장치 (140)를통해다양한디자인의목표기판 (20)을설계할수 있다. 88] The plurality of stamping portions 70 may be configured to be larger than the second horizontal interval (12 幻 now the second vertical interval 121). That is, the base 150 is in the second state (the degree of deformation in the horizontal direction from the 150 ratio) It can be configured to be different from the deformation degree in the vertical direction. Through this configuration, it is possible to change the density or orientation of the microdevice (1) to be mounted. In addition, the target substrate 20 of various designs can be designed through such a transfer device (140). have.
전사장치 (140)는도 10에서제 1상태 (150幻에서제 1가로간격 (11幻과,제 1 세로간격 (11비이동일한것을도시하였으나,이에한정되지않고,제 1 The transfer device 140 is shown in Fig. 10 in the first state (150 幻 to the first horizontal interval (11 幻 and the first vertical interval (11 non-moving), but is not limited thereto, and the first
상태 (150幻에서도제 1가로간격 (11幻과제 1세로간격 (11비은다르도록구성될수 있다. State (even at 150幻, the first horizontal interval (11幻as the first vertical interval) (11 ratio can be configured to be different.
7 9 3611 7 9 3611
[ 9 998888이3 또한도 11에서의전사장치 (140)는제 2상태 (150비에서제 2가로간격 (12幻은 제 2세로간격 (121))보다크도록구성되는것을일례로도시하였다.그러나이에 한정되지않고,제 2가로간격 (12幻이제 2세로간격 (121))보다작도록구성될수도 있다. [9 998888 3 Also, the transfer device 140 in FIG. 11 is shown as an example that is configured to be larger than the second state (150 ratio to the second horizontal interval (12幻 is the second vertical interval 121)). It is not limited and may be configured to be smaller than the second horizontal interval (12幻 now the second vertical interval 121).
설명의편의를위해가로방향의가로간격과,세로방향의세로간격으로 설명하였으나,이에한정되지않는다.즉,어느일방향의제 1방향간격,어느 일방향과다른방향의제 2방향간격으로이격방향을달리하도록구성될수도 있다. For convenience of explanation, the explanation is given as a horizontal interval in a horizontal direction and a vertical interval in a vertical direction, but is not limited thereto, i.e., a first direction interval in one direction and a second direction interval in one direction and the other direction. It may be configured to be different.
[92] 도 12, 13은본발명의또다른실시예에따른전사장치의정면도이다. 12 and 13 are front views of a transfer device according to another embodiment of the present invention.
전사장치 (240)는제 1상태 (250幻에서제 1간격 (11 1115)으로배치되고제 2 상태 (250비에서제 2간격 (12 12비으로배치되는복수의스탬핑부 (70)를포함할 수있다. The transfer device 240 may include a plurality of stamping portions 70 arranged in a first state (250 to a first interval (11 1115) and a second state (250 to a second interval (12 to 12 ratios). have.
[94] 전사장치 (240)는제 1구간 (51)의제 1복수의스탬핑부 (70)와제 2구간 (52)의 제 2복수의스탬핑부 (70)를포함할수있다. 2020/175814 1»(:1^1{2020/001706 The transfer device 240 may include a first plurality of stamping portions 70 of the first section 51 and a second plurality of stamping portions 70 of the second section 52. 2020/175814 1»(:1^1{2020/001706
[95] 제 1, 2복수의스탬핑부 (70)는상호간의이격간격을달리할수있다.즉,제 1 복수의스탬핑부 (70)는베이스 (250)가제 2상 [95] The first and second plurality of stamping portions 70 can have different spaced intervals between them. That is, the first plurality of stamping portions 70 have the base 250 being the second phase.
이격되며,제 2복수의스탬핑부 (70)는베이스
Figure imgf000010_0001
Are spaced apart, and the second plurality of stamping parts 70
Figure imgf000010_0001
간격 (12비이격될수있다.제 2 ¾간격은다르도록구성될수있다.즉, 베이스 (250)는일부구간이다른구간과스탬핑부 (70)의간격이다르도록배치될 수있다. The spacing (can be separated by 12 ratios. The second ¾ spacing may be configured to be different. That is, the base 250 may be arranged so that some sections are different from the spacing of the stamping section 70 with the other section.
[96] 본실시예에서는제 1구간 (51)의제 1복수의스탬핑부 (70)는제 2구간 (52)의 제 2복수의스탬핑부 (70)보다이격간격이좁도록배치된다.그러나이에 한정되지않고,복수의스탬핑부 (70)가적어도일부영역에서이격간격을 달리하도록배치되면이를만족한다.또한제 1복수의스탬핑부 (70)는제 2 복수의스탬핑부 (70)에비해가로방향으로만간격이다르도록도시하고 설명하였으나,이에한정되지않고다른방향으로도간격이다르도록구성될 수도있다. In the present embodiment, the first plurality of stamping portions 70 of the first section 51 are arranged to have a narrower spacing than the second plurality of stamping portions 70 of the second section 52. However, limited to this. In addition, if the plurality of stamping portions 70 are arranged to have different spacing in at least some areas, this is satisfied. In addition, the first plurality of stamping portions 70 are only in the horizontal direction compared to the second plurality of stamping portions 70. Although shown and described to have different intervals, it is not limited thereto and may be configured to be different in different directions.
[97] 이러한구성을통해전사장치 (240)는목표기판 (20)의영역별마이크로 [97] Through this configuration, the transfer device 240 can be applied to each area of the target substrate 20.
디바이스 (1(^)의밀집도를달리할수있다.또한이러한전사장치 (240)를통해 다양한디자인의목표기판 (20)을설계할수있다 The device (1 (^) density can be varied. In addition, it is possible to design the target substrate 20 of various designs through the transfer device 240).
[98] 이상에서는특정의실시예에대하여도시하고설명하였다.그러나,상기한 실시예에만한정되지않으며 ,발명이속하는기술분야에서통상의지식을가진 자라면이하의청구범위에기재된발명의기술적사상의요지를벗어남이없이 얼마든지다양하게변경실시할수있을것이다. [98] In the above, specific embodiments have been illustrated and described. However, the technical idea of the invention described in the following claims is not limited to the above-described embodiments, and those with ordinary knowledge in the technical field to which the invention belongs It will be possible to implement various changes as much as possible without deviating from the point of view.
[99] 제조기
Figure imgf000010_0002
마이크로디바이스
[99] Maker
Figure imgf000010_0002
Micro device
[100] 20 :목표기판 40 :전사장치 [100] 20: target substrate 40: transfer device
[101] 50 :베이스 5( :제 1상태 [101] 50: base 5 (: first state
[102] 5아) :제 2상태 54 :베이스바디 [102] 5A): Second state 54: Base body
[103] 56 :레그 70 :스탬핑부 [103] 56: leg 70: stamping part
[104] II :제 1간격 12 :제 2간격 [104] II: The first interval 12: The second interval

Claims

() 2020/175814 1»(:1/10公020/001706 청구범위 () 2020/175814 1»(:1/10公020/001706 Claims
[청구항 1] 베이스; [Claim 1] Base;
상기베이스에마련되는복수의스탬핑부;를포함하고, Including; a plurality of stamping portions provided on the base,
상기베이스는음의프아송비를갖는오그제틱( 노)구조를포함하는 전사장치. The base is a transfer device that includes an augitive (no) structure having a negative Poisson's ratio.
[청구항 2] 제 1항에 있어서, [Claim 2] The method of claim 1,
상기베이스는, The base,
제 1상태와,상기복수의스탬핑부가상호간에이격되도록상기제 1 상태로부터확장된제 2상태를동작하는전사장치 . A transfer device operating a first state and a second state extended from the first state so that the plurality of stamping parts are spaced apart from each other.
[청구항 3] 제 2항에 있어서, [Claim 3] In paragraph 2,
상기복수의스탬핑부는, The plurality of stamping portions,
상기베이스가상기제 1상태에있을때,상호간에제 1간격이격되고, 상기베이스가상기제 2상태에있을때,상호간에상기제 1간격보다큰 제 2간격이격되도록구성되는전사장치 . When the base is in the first state, a first interval is spaced between each other, and when the base is in the second state, a transfer device configured to be spaced apart from each other with a second interval greater than the first interval.
[청구항 4] 제 3항에 있어서, [Claim 4] In paragraph 3,
상기복수의스탬핑부는, The plurality of stamping portions,
상기베이스가상기제 1상태일때,상기제 1간격으로배열되는 대상기판의마이크로디바이스들을점착하여분리시키고, 상기베이스가상기제 2상태에있을때 ,상기제 2간격으로목표기판에 상기점착된마이크로디바이스들을배치시키도록구성되는전사장치 . When the base is in the first state, the microdevices of the target substrate arranged at the first interval are adhered and separated, and when the base is in the second state, the adhered microdevices are placed on the target substrate at the second interval A transfer device configured to allow.
[청구항 5] 제 4항에 있어서, [Claim 5] The method of claim 4,
상기마이크로디바이스는마이크로 1止1)를포함하는전사장치. The micro device is a transfer device including a micro device 1).
[청구항 6] 제 3항에 있어서, [Claim 6] In paragraph 3,
상기제 2간격은가로방향과제 2가로간격과,세로방향의제 2 세로간격을포함하고, The second interval includes the second horizontal interval in the horizontal direction and the second vertical interval in the vertical direction,
상기복수의스탬핑부는, The plurality of stamping portions,
상기베이스가상기제 2상태일때,상기제 2가로간격과,상기제 2 가로간격과다른제 2세로간격으로이격되도록구성되는전사장치 . When the base is in the second state, the transfer device is configured to be spaced apart by the second horizontal interval and a second vertical interval different from the second horizontal interval.
[청구항 7] 제 3항에 있어서, [Claim 7] In paragraph 3,
상기베이스는, The base,
제 1구간과,상기제 1구간과인접한제 2구간;을포함하고, Including a first section and a second section adjacent to the first section,
상기복수의스탬핑부는, The plurality of stamping portions,
상기베이스의제 1구간에배치되는제 1복수의스탬핑부와,상기제 1 구간과인접한상기베이스의제 2구간에배치되는제 2복수의 스탬핑부;를포함하고, Including; a first plurality of stamping portions disposed in the first section of the base, and a second plurality of stamping portions disposed in the second section of the base adjacent to the first section,
상기제 1복수의스탬핑부는상기베이스가상기제 2상태일때,상기제 2복수의스탬핑부보다이격간격이작게배치되도록구성되는전사장치. 2020/175814 1»(:1^1{2020/001706 The first plurality of stamping units, when the base is in the second state, the transfer device is configured to be disposed to be smaller than the second plurality of stamping units. 2020/175814 1»(:1^1{2020/001706
[청구항 8] 제 2항에있어서, [Claim 8] In paragraph 2,
상기베이스는, The base,
상기제 2상태에서적어도일부가곡면을포함하도록구성되는 전사장치. A transfer device configured to include at least a portion of a curved surface in the second state.
[청구항 9] 제 1항에있어서, [Claim 9] In paragraph 1,
상기베이스는벤딩가능하도록구성되는전사장치 . The base is a transfer device configured to be bent.
[청구항 1이 제 1항에있어서, [In paragraph 1 of claim 1,
상기복수의스탬핑부는점착성재질을포함하는전사장치. A transfer device comprising the plurality of stamping parts adhesive material.
[청구항 11] 제 1항에있어서, [Claim 11] In paragraph 1,
상기베이스와상기복수의스탬핑부는일체로형성되는전사장치. A transfer device in which the base and the plurality of stamping parts are integrally formed.
PCT/KR2020/001706 2019-02-27 2020-02-06 Transfer device WO2020175814A1 (en)

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US11718115B2 (en) * 2019-11-27 2023-08-08 National Technology & Engineering Solutions Of Sandia, Llc Architected stamps for liquid transfer printing

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