WO2020171411A1 - Dispositif d'étalonnage de capteur d'image thermique infrarouge ayant une fenêtre multiple pour une précision d'étalonnage améliorée - Google Patents

Dispositif d'étalonnage de capteur d'image thermique infrarouge ayant une fenêtre multiple pour une précision d'étalonnage améliorée Download PDF

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Publication number
WO2020171411A1
WO2020171411A1 PCT/KR2020/001391 KR2020001391W WO2020171411A1 WO 2020171411 A1 WO2020171411 A1 WO 2020171411A1 KR 2020001391 W KR2020001391 W KR 2020001391W WO 2020171411 A1 WO2020171411 A1 WO 2020171411A1
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WO
WIPO (PCT)
Prior art keywords
thermal image
image sensor
black body
temperature
window
Prior art date
Application number
PCT/KR2020/001391
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English (en)
Korean (ko)
Inventor
강현오
김명원
이성현
김보영
최혜선
Original Assignee
엘지전자 주식회사
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Application filed by 엘지전자 주식회사 filed Critical 엘지전자 주식회사
Publication of WO2020171411A1 publication Critical patent/WO2020171411A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof

Definitions

  • the present invention relates to an apparatus for calibrating an uncooled infrared thermal image sensor, and can be applied to a technical field of securing temperature accuracy by preventing heat exchange between a black body installed in the calibration apparatus and a temperature inside a chamber.
  • the infrared image sensor converts infrared radiation of an object to be measured into temperature data and provides it to the user, and in recent years, it is used in many fields such as security/self-driving cars/smart factories.
  • various infrared sensors and measurement methods have been developed.
  • the cooling method is a high-cost structure because cooling equipment must be added to the outside of the detector.
  • the non-cooling method does not require a high-cost structural cooling device, and has the advantages of a small system volume, low power consumption, and low price, and thus sensors suitable for various purposes have been developed for general industrial and commercial purposes.
  • research is being conducted focusing on having a high sensitivity comparable to that of the cooling method even in the uncooled method.
  • the uncooled infrared image sensor it is most important to compensate for the external temperature under the environment to be used. This becomes an absolute standard for accurately measuring the temperature of an object to be detected. In order to accurately correct the external temperature, it is necessary to remove the disturbance caused by the external temperature of the temperature to be measured.
  • An object of the present invention is to provide a calibration system based on an accurate temperature by preventing a black body in a chamber from being disturbed by a temperature inside the chamber.
  • a first temperature controller for controlling a temperature of a black body, an infrared sensor unit for sensing the temperature of the black body, a chamber in which the black body and the infrared sensor unit are accommodated, and the black body are provided. It is maintained in an airtight state, and provides a thermal image sensor calibration apparatus, characterized in that it comprises a cover portion including a window through which infrared rays emitted from the black body pass.
  • the cover part includes a plurality of the windows on the one surface
  • the thermal image sensor calibration apparatus includes a plurality of the infrared sensor parts corresponding to the plurality of windows. Provides a thermal image sensor calibration device.
  • the present invention provides an apparatus for calibrating a thermal image sensor, wherein the plurality of windows are provided on one surface of the cover surface in a grid structure.
  • the present invention provides an apparatus for calibrating a thermal image sensor, wherein the window includes a plurality of window layers.
  • the present invention provides an apparatus for calibrating a thermal image sensor, wherein the plurality of window layers include an interlayer vacuum unit.
  • the present invention provides an apparatus for calibrating a thermal image sensor, wherein the window transmits a wavelength band of 8 to 14 ⁇ m.
  • the window includes magnesium fluoride, calcium fluoride, barium fluoride, zinc selenide, and zinc sulfide.
  • sulfide sulfide
  • arsenic tri-sulfide Arsenic tri-sulfide
  • silicon Sicon
  • germanium Germanium
  • the thermal image calibration apparatus includes a second temperature control device that adjusts the temperature inside the chamber, and corrects the temperature of the black body in response to the temperature inside the chamber. It provides a thermal image sensor calibration apparatus, characterized in that.
  • the present invention provides an apparatus for calibrating a thermal image sensor, characterized in that the cover is made of an insulating material.
  • the black body provided in the chamber is thermally blocked from the inside of the chamber, so that temperature disturbance due to the temperature inside the chamber can be prevented.
  • the present invention can shorten the time required for calibration by acquiring a plurality of data through a single measurement through a plurality of image sensors.
  • 1 is a schematic diagram of an uncooled infrared thermal image correction system.
  • FIG. 2 is a perspective view of a conventional uncooled infrared thermal image correction system.
  • FIG. 3 is a perspective view of an uncooled infrared thermal image correction system according to the present invention.
  • FIG 4 is an enlarged view of a cover part included in the uncooled infrared thermal image calibration system according to the present invention.
  • FIG. 5 is a cross-sectional view in the direction A-A' of FIG. 4(b).
  • Figure 6 is a graph for explaining the characteristics of the material constituting the window included in the cover of the present invention.
  • 1 is a schematic diagram of an uncooled infrared thermal image correction system.
  • the uncooled infrared thermal image calibration system measures the infrared radiation emitted from the black body 20 at a specific temperature through the infrared sensor 10, and measures the relationship between the radiation amount of infrared rays and the specific temperature, so that the specific temperature and the infrared radiation amount Correct your relationship with.
  • the temperature control unit adjusts the temperature of the black body 20, and infrared radiation from the black body 20 is reflected by reflective means such as a scanning mirror or directly input to the infrared sensor 10.
  • the infrared radiation detection value is input to the temperature correction unit, and the temperature correction unit corrects the relationship between the infrared radiation amount emitted from the black body 20 heated in the reference temperature range and the infrared radiation amount actually detected by the temperature.
  • the relationship between the amount of infrared radiation emitted from the black body 20 heated in the reference temperature range and the amount of infrared radiation actually detected by the temperature is largely affected by the external temperature of the black body 20.
  • the black body 20 and the image sensor 10 are the chamber 30 in which the temperature can be consistently controlled by the temperature control device. It may be provided inside.
  • the temperature signal signal value of the object to be measured varies depending on the temperature of the measurement environment.
  • the uncooled thermal image sensor system represented by a bolometer locates the black body 20 and the image sensor 10 represented by the object to be measured in the chamber 30 capable of controlling the temperature of the measurement environment.
  • FIG. 2 is a perspective view of a conventional uncooled infrared thermal image correction system.
  • the uncooled infrared thermal image correction system may include a chamber 211 inside the housing 210 forming an external shape, and may include a black body 220 and an infrared image sensor (not shown) inside the chamber 211.
  • the chamber 211 is preferably disconnected from the outside so that the temperature can be consistently controlled by the temperature control device, and the housing 210 further includes a door 212 that can selectively open and close the chamber 211. I can.
  • the black body 220 is exposed to the chamber 211, and thus the temperature of the black body 220 may be affected according to a temperature change in the chamber 211.
  • the temperature inside the chamber 211 is not consistently controlled by the temperature of the black body 220.
  • the black body accommodating part 211 has an open state toward the image sensor, and the black body 220 has a structure that affects the interior of the chamber 211 and mutual temperature.
  • FIG. 3 is a perspective view of an uncooled infrared thermal image correction system according to the present invention.
  • the present invention proposes a structure in which the black body 220 (see FIG. 2) provided in the black body receiving part 221 maintains an airtight state with the cover part 230 so as not to mutually affect the temperature inside the chamber 211 .
  • the present invention relates to a first temperature controller for controlling the temperature of the black body 220, an infrared sensor unit for sensing the temperature of the black body 220, and a chamber 211 accommodating the black body 220 and the infrared sensor unit.
  • the black body 220 in an airtight state, and may include a cover 230 including a window through which infrared rays emitted from the black body 220 pass.
  • the black body 220 is accommodated in the black body accommodating portion 221 provided on one side of the chamber 211, the black body accommodating portion 221 has an opening open toward the image sensor, the opening The black body 220 may be kept in an airtight state by being covered with the cover part 230.
  • cover part 230 and the black body accommodating part 221 may be integrally formed.
  • the cover 230 may be made of an insulating material to prevent mutual influence between the black body 220 and the internal temperature of the chamber 221.
  • the black body accommodating portion 221 may also be provided with an insulating material.
  • the cover part 230 is provided between the black body 220 and the image sensor, and may include a window through which infrared rays emitted from the black body 220 pass.
  • FIG 4 is an enlarged view of a cover part included in the uncooled infrared thermal image calibration system according to the present invention.
  • the algorithm for systemizing the relationship between the amount of infrared radiation emitted from the black body 220 (refer to FIG. 2) and the amount of infrared radiation actually detected by the temperature of the black body 220 using a calibration system is faster and faster when a plurality of image sensors are used. It can be extracted accurately.
  • the uncooled infrared thermal image calibration apparatus may include a plurality of infrared sensor units.
  • the cover unit 230 may include a plurality of windows 232 corresponding to the plurality of infrared sensor units. Each of the plurality of infrared sensor units may measure an amount of infrared radiation emitted through the window 232.
  • the present invention acquires a plurality of data at a time through a plurality of infrared sensor units under the same conditions (a specific temperature condition of the black body 220 and a specific temperature condition of the chamber 211 (see FIG. 3))
  • the relationship between the amount of radiation and the amount of infrared radiation actually detected can be obtained more accurately and quickly.
  • the plurality of windows 232 may be provided on the cover frame 231 in a grid shape. Since the cover unit 230 includes a plurality of windows 232 that are divided than a single glass glass as shown in FIG. 4A, a mutual influence between the black body 220 and the internal temperature of the chamber 211 may be reduced. This is because the cover frame 231 may be made of a heat insulating material superior in thermal insulation properties than the window 232.
  • the window 232 may be formed of a plurality of window layers as shown in FIG. 4B.
  • cover unit 230 including a plurality of window layers will be described in detail.
  • FIG. 5 is a cross-sectional view in the direction A-A' of FIG. 4(b).
  • the window 232 may be fixed to the cover frame 231 and consist of at least two window layers.
  • the window layer may be maintained in a compressed state or may include an interlayer vacuum unit 233.
  • the window 232 is provided with a plurality of window layers to prevent heat exchange through the window 232, and a vacuum part 233 between the window layers is provided to prevent lead exchange even if the window 232 is not composed of an insulating material. I can.
  • Figure 6 is a graph for explaining the characteristics of the material constituting the window included in the cover of the present invention.
  • the present invention compares the amount of infrared radiation emitted from the black body 220 (refer to FIG. 2) and the measured amount, and the window included in the cover part 230 (see FIG. 3) is the infrared ray emitted from the black body 220. It must be able to pass through wavelengths.
  • the infrared rays emitted from the black body 220 are in the far-infrared band of 8-14 ⁇ m, and the window included in the cover 230 is preferably made of a material that transmits the wavelength band of 8-14 ⁇ m.
  • magnesium fluoride, calcium fluoride, barium fluoride, zinc selenide, zinc sulfide, Arsenic tri-sulfide (Arsenic tri-sulfide), silicon (Silicon) and germanium (Germanium) is preferably composed of at least one.
  • FIG. 7(a) is a graph of the error range of the calibration algorithm obtained by using the conventional uncooled infrared thermal image calibration system according to FIG. 2
  • FIG. 7(b) is a ratio of the present invention according to FIG. This is a graph of the error range of the calibration algorithm obtained using the cooled infrared thermal image calibration system.
  • the error of the acquired calibration algorithm ranged from a maximum of 0.7 to a minimum of -1.7.
  • the uncooled infrared calibration system of the present invention confirms that the error of the obtained calibration algorithm decreases from a maximum of 0.6 to a minimum of -1.1. I can.
  • the temperature of the black body 220 and the temperature of the chamber 211 are varied, and the accuracy of the calibration algorithm obtained in the same manner through the obtained data can be expected to increase.
  • An object of the present invention is to obtain more accurate data, and modeling for obtaining a calibration algorithm through the obtained data can be applied in the same manner, and various methods can be applied for the modeling.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

L'invention concerne un dispositif d'étalonnage de capteur d'image thermique pour empêcher une perturbation de température entre un corps noir et un environnement externe, comprenant : un premier dispositif de commande de température pour commander la température du corps noir ; une unité de capteur infrarouge pour détecter la température du corps noir ; une chambre pour recevoir le corps noir et l'unité de capteur infrarouge ; et une unité de couvercle qui maintient le corps noir dans un état étanche à l'air, et qui comprend, sur une surface de celui-ci, une fenêtre pour permettre à des rayons infrarouges émis par le corps noir de passer à travers celui-ci.
PCT/KR2020/001391 2019-02-22 2020-01-30 Dispositif d'étalonnage de capteur d'image thermique infrarouge ayant une fenêtre multiple pour une précision d'étalonnage améliorée WO2020171411A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2019-0021072 2019-02-22
KR1020190021072A KR20200102728A (ko) 2019-02-22 2019-02-22 캘리브레이션 정확성 향상을 위한 멀티 윈도우가 구비된 적외선 열화상 이미지 센서 교정 장치

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WO2020171411A1 true WO2020171411A1 (fr) 2020-08-27

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070116703A (ko) * 2006-06-06 2007-12-11 임용근 비냉각형 적외선 센서
KR20080013444A (ko) * 2006-08-09 2008-02-13 주훈 다수의 흑체 소스로 이루어진 흑체 어셈블리 및 이를 이용한 열상 카메라의 온도보정 방법
JP2012191074A (ja) * 2011-03-11 2012-10-04 Toshiba Corp 非冷却赤外線撮像素子及びその製造方法
KR20130038468A (ko) * 2011-10-10 2013-04-18 한국광기술원 윈도우 일체형 비냉각형 적외선 검출기 및 그 제조방법
JP2014134402A (ja) * 2013-01-08 2014-07-24 Fujitsu Ltd 赤外線センサ及び温度補償方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070116703A (ko) * 2006-06-06 2007-12-11 임용근 비냉각형 적외선 센서
KR20080013444A (ko) * 2006-08-09 2008-02-13 주훈 다수의 흑체 소스로 이루어진 흑체 어셈블리 및 이를 이용한 열상 카메라의 온도보정 방법
JP2012191074A (ja) * 2011-03-11 2012-10-04 Toshiba Corp 非冷却赤外線撮像素子及びその製造方法
KR20130038468A (ko) * 2011-10-10 2013-04-18 한국광기술원 윈도우 일체형 비냉각형 적외선 검출기 및 그 제조방법
JP2014134402A (ja) * 2013-01-08 2014-07-24 Fujitsu Ltd 赤外線センサ及び温度補償方法

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