WO2020155409A1 - 用以去除柔性基板中气泡的设备与方法 - Google Patents

用以去除柔性基板中气泡的设备与方法 Download PDF

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Publication number
WO2020155409A1
WO2020155409A1 PCT/CN2019/083035 CN2019083035W WO2020155409A1 WO 2020155409 A1 WO2020155409 A1 WO 2020155409A1 CN 2019083035 W CN2019083035 W CN 2019083035W WO 2020155409 A1 WO2020155409 A1 WO 2020155409A1
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Prior art keywords
flexible substrate
side wall
heating plate
wall
removing bubbles
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English (en)
French (fr)
Inventor
沈海洋
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/471,498 priority Critical patent/US11420228B2/en
Publication of WO2020155409A1 publication Critical patent/WO2020155409A1/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
    • B05D3/0466—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases the gas being a non-reacting gas
    • B05D3/048—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases the gas being a non-reacting gas for cooling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0254—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
    • C03C17/32—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with synthetic or natural resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2203/00—Other substrates
    • B05D2203/30—Other inorganic substrates, e.g. ceramics, silicon
    • B05D2203/35—Glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2505/00—Polyamides
    • B05D2505/50—Polyimides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment

Definitions

  • the present invention relates to the field of display technology, in particular to a device and method for removing bubbles in a flexible substrate.
  • Polyimide (PI) is a type of polymer with imide repeating units, which has the advantages of wide application temperature, chemical resistance, high strength, and good insulation. Therefore, PI as a flexible substrate material has been successfully applied to flexible display electronic products.
  • PI liquid is applied to the bottom plate, and then the PI liquid is baked to cure the PI.
  • bubbles may be generated in the PI layer, and these bubbles will remain in the PI layer as the PI liquid solidifies, resulting in a decrease in the manufacturing yield of flexible display electronic products.
  • bubbles There are two main reasons for bubbles: (1) Before coating the PI liquid, air enters the PI liquid, forming bubbles in the PI liquid; (2) During the baking process of the PI liquid, the volatiles volatilized from the PI layer This results in gas generation and the formation of bubbles in the PI layer.
  • the way to remove bubbles is the treatment before coating the PI liquid.
  • the purpose of the present invention is to provide a device and method for removing bubbles in a flexible substrate to solve the technical problem of bubbles in the PI layer in the prior art.
  • the present invention provides a device for removing bubbles in a flexible substrate.
  • the flexible substrate includes a bottom plate and a polyimide layer coated on the bottom plate.
  • the device includes:
  • a cavity the cavity includes a top wall, a side wall and a bottom wall, the top wall, the side wall and the bottom wall define an accommodation space;
  • a heating plate, the heating plate is arranged in the containing space;
  • a cooling pipeline, the cooling pipeline is embedded in at least one of the top wall and the side wall of the cavity.
  • the side wall includes an air inlet and an air outlet arranged opposite to the air inlet.
  • the cooling pipeline has a cooling fluid circulating therein, and the cooling fluid is maintained at a temperature of about room temperature.
  • the device further includes a plurality of support pins, the support pins movably pass through the perforations formed in the heating plate, so that all the support pins provided on the heating plate can be removed.
  • the flexible substrate is raised or lowered.
  • the device further includes a gas pipeline connected to the top wall and the side wall.
  • the present invention also provides a method for removing bubbles in a flexible substrate.
  • the flexible substrate includes a bottom plate and a polyimide layer coated on the bottom plate.
  • the method includes:
  • the flexible substrate is provided in a device, and the device includes:
  • a cavity the cavity includes a top wall, a side wall and a bottom wall, the top wall, the side wall and the bottom wall define an accommodation space;
  • a heating plate, the heating plate is arranged in the containing space;
  • a cooling pipeline, the cooling pipeline is embedded in at least one of the top wall and the side wall of the cavity;
  • the heating plate Using the heating plate to heat the bottom of the flexible substrate, the heating plate being controlled at a temperature between 550°C and 750°C;
  • the cooling pipe is used to cool the top of the flexible substrate, and the cooling pipe is controlled at a temperature of about room temperature.
  • the side wall includes an air inlet and an air outlet disposed opposite to the air inlet, and the method further includes using the air inlet to inject nitrogen or inert gas to The flexible substrate is cooled, and the exhaust port is used to discharge volatile matter volatilized from the flexible substrate.
  • the device further includes a gas pipeline connected to the top wall and the side wall, and the method further includes using the gas pipeline to inject nitrogen or Inert gas to cool the flexible substrate.
  • the present invention provides a device and method for removing bubbles in a flexible substrate.
  • the bottom of the PI layer has a faster gas volatilization rate than the top of the PI layer, so the bubbles in the PI layer can be efficiently discharged.
  • FIG. 1 is a cross-sectional side view of a method for removing bubbles in a flexible substrate according to a preferred embodiment of the present invention.
  • FIG. 1 is a cross-sectional side view of a method for removing bubbles in a flexible substrate according to a preferred embodiment of the present invention.
  • the present invention provides a device 1000 for removing bubbles in the flexible substrate 30.
  • the flexible substrate 30 includes a bottom plate (such as a glass plate) 21 and a polyimide (PI) layer 22 coated on the bottom plate 21.
  • the device 1000 includes:
  • a cavity 11, the cavity 11 includes a top wall 111, a side wall 112 and a bottom wall 113, the top wall 111, the side wall 112 and the bottom wall 113 define a containing space 12;
  • a heating plate 13 arranged in the containing space 12;
  • a cooling pipe 14 is embedded in at least one of the top wall 111 and the side wall 112 of the cavity 11.
  • the volatile matter volatilized from the PI layer 22 is mainly gas, the density of the gaseous volatile matter is relatively small, and the volatile matter will volatilize in an upward direction.
  • the bottom surface of the PI layer 22 is in contact with the bottom plate (for example, a glass plate) 21, and volatile matter cannot evaporate from the bottom surface of the PI layer 22 in a downward direction. Therefore, volatiles are discharged from the top surface of the PI layer 22.
  • the present invention uses the heating plate 13 to heat the bottom surface of the PI layer 22, and the heating plate 13 is controlled at a temperature between 550°C and 750°C.
  • the present invention uses the cooling pipe 14 to cool the top surface of the PI layer 22, and the cooling pipe 14 has a cooling fluid circulating therein, and the cooling fluid is maintained at a temperature of about room temperature.
  • the cooling fluid may be a gas or a liquid, such as nitrogen or water. Therefore, the present invention uses the heating plate 13 and the cooling pipe 14 to control the temperature of the bottom surface and the top surface of the PI layer 22 respectively, so that the bottom of the PI layer 22 has a relatively higher temperature than the top of the PI layer 22.
  • the bottom of the relatively high temperature PI layer 22 have a faster gas volatilization rate than the top of the relatively low temperature PI layer 22, and the bubbles in the bottom layer of the PI layer 22 will first volatilize and be discharged. After the bubbles in the bottom layer of the PI layer 22 are discharged, the bubbles in the PI layer 22 are gradually volatilized and discharged.
  • the present invention can efficiently discharge air bubbles in the PI layer 22.
  • the side wall 112 includes an air inlet 1121 and an air outlet 1122 arranged opposite to the air inlet 1121.
  • the PI layer 22 is coated on the bottom plate (for example, a glass plate) 21
  • the flexible substrate 30 composed of the PI layer 22 and the bottom plate 21 is placed in the device 1000.
  • Nitrogen or other inert gas is injected into the accommodating space 12 from the air inlet 1121 and discharged from the exhaust port 1122, that is, the nitrogen or inert gas circulates in the device 1000 (as shown by arrow 50) , To maintain the thermal energy in the device 1000.
  • the nitrogen or inert gas can play a role in preventing oxidation of the PI layer 22.
  • the injected nitrogen or inert gas can also be used to cool the flexible substrate 30.
  • the exhaust port 1122 can be used to discharge volatiles volatilized from the PI layer 22.
  • the device 1000 further includes a gas pipeline 16 connected to the top wall 111 and the side wall 112. Nitrogen or other inert gas is injected into the containing space 12 from the gas pipeline 16, and the nitrogen or inert gas can play a role in preventing oxidation of PI. After the PI layer 22 has been completely cured, the injected nitrogen or inert gas can also be used to cool the flexible substrate 30.
  • the device 1000 further includes a plurality of supporting pins (supporting pin) 15.
  • the supporting pin 15 can movably pass through the perforation formed in the heating plate 13 so that the flexible substrate 30 provided on the heating plate 13 can be raised or lowered.
  • the support pin 15 will first rise and the top of the support pin 15 will therefore contact and abut the bottom surface of the flexible substrate 30, and then the support The pin 15 is lowered to an appropriate height, so that the flexible substrate 30 is supported on the heating plate 13.
  • the supporting pins 15 will support the flexible substrate 30 and raise the flexible substrate 30 to an appropriate height first, and then the flexible substrate 30 Then it is moved out of the device 1000.
  • the cooling pipe 14 may be embedded only in the top wall 111, only in the side wall 112, or both. As long as the cooling pipe 14 can control the temperature of the top of the PI layer 22, the present invention does not specifically limit the location of the cooling pipe 14.
  • the present invention also provides a method for removing bubbles in the flexible substrate 30.
  • the flexible substrate 30 includes a bottom plate (for example, a glass plate) 21 and a polyimide layer 22 coated on the bottom plate.
  • the method includes:
  • the flexible substrate 30 is provided in a device 1000, and the device 1000 includes:
  • a cavity 11, the cavity 11 includes a top wall 111, a side wall 112 and a bottom wall 113, the top wall 111, the side wall 112 and the bottom wall 113 define a containing space 12;
  • a heating plate 13 arranged in the containing space 12;
  • the heating plate 13 Using the heating plate 13 to heat the bottom of the flexible substrate 30, the heating plate 13 is controlled at a temperature between 550°C and 750°C;
  • the cooling pipe 14 is used to cool the top of the flexible substrate 30, and the cooling pipe 14 is controlled at a temperature of about room temperature.
  • the side wall 112 includes an air inlet 1121 and an air outlet 1122 disposed opposite to the air inlet 1121.
  • the method further includes using the air inlet 1121 to inject nitrogen or The inert gas is used to cool the flexible substrate 30, and the exhaust port 1122 is used to discharge the volatiles volatilized from the flexible substrate 30.
  • the device 1000 further includes a gas pipeline 16 connected to the top wall 111 and the side wall 112, and the method further includes using the gas pipeline 16 To inject nitrogen or inert gas to cool the flexible substrate.
  • the present invention provides a device and method for removing bubbles in a flexible substrate.
  • the bottom of the PI layer has a faster gas volatilization rate than the top of the PI layer, so the bubbles in the PI layer can be efficiently discharged.

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  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
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Abstract

一种用以去除柔性基板(30)中气泡的设备(1000)，所述柔性基板(30)包括一底板(21)与一涂覆在所述底板(21)上的聚酰亚胺层(22)，所述设备(1000)包括：一腔体(11)，所述腔体(11)包括一顶壁(111)、一侧壁(112)与一底壁(113)，所述顶壁(111)、所述侧壁(112)与所述底壁(113)定义出一容纳空间(12)；一加热板(13)，所述加热板(13)设置在所述容纳空间(12)；及一冷却管路(14)，所述冷却管路(14)嵌设在所述腔体(11)的顶壁(111)和侧壁(112)的至少一者内。

Description

用以去除柔性基板中气泡的设备与方法 技术领域
本发明涉及显示技术领域，特别涉及一种用以去除柔性基板中气泡的设备与方法。
 背景技术
聚酰亚胺(polyimide，PI)是一类具有酰亚胺重复单元的聚合物，具有适用温度广、耐化学腐蚀、高强度、良好绝缘性等优点。因此，PI作为柔性基底材料已经成功地应用到柔性显示电子产品上。
基于PI所制作的柔性有机发光二极管(organic light emitting diode，OLED)面板是将PI液体涂覆到底板上，然后再通过将PI液体烘烤的方式使PI固化。在涂覆PI液体的过程中可能会在PI层中产生气泡，这些气泡会随着PI液体的固化而一直残留在PI层内，导致柔性显示电子产品的制造良率下降。
气泡产生的原因主要有两个：(1)在涂覆PI液体之前，空气进入PI液体，在PI液体中形成气泡；(2)在PI液体烘烤过程中，从PI层挥发出来的挥发物导致产生气体而在PI层中形成气泡。
根据现有技术，去除气泡的方式均是在涂覆PI液体之前所进行的处理。例如，在涂覆PI液体之前，将PI液体置于真空环境中并持续抽真空，以去除PI液体中的气泡；或是利用多次过滤的方式来减少PI液体中的气泡。目前并没有关于在涂覆PI液体之后如何减少因为PI层中物质挥发产生气泡的技术。
因此，有必要提供一种用以去除柔性基板中气泡的设备与方法，以解决现有技术所存在的问题。
 技术问题
本发明的目的在于提供一种用以去除柔性基板中气泡的设备与方法，以解决现有技术中PI层中具有气泡的技术问题。
 技术解决方案
为解决上述技术问题，本发明提供一种用以去除柔性基板中气泡的设备，所述柔性基板包括一底板与一涂覆在所述底板上的聚酰亚胺层，所述设备包括：
一腔体，所述腔体包括一顶壁、一侧壁与一底壁，所述顶壁、所述侧壁与所述底壁定义出一容纳空间；
一加热板，所述加热板设置在所述容纳空间；及
一冷却管路，所述冷却管路嵌设在所述腔体的顶壁和侧壁的至少一者内。
根据本发明一优选实施例，所述侧壁包括一进气口以及一与所述进气口相对设置的排气口。
根据本发明一优选实施例，所述冷却管路中具有在其内循环流动的冷却流体，所述冷却流体被维持在约室温的温度。
根据本发明一优选实施例，所述设备更包括多个支撑销，所述支撑销可移动地穿过被形成在所述加热板中的穿孔，而能够将设置在所述加热板上的所述柔性基板予以上升或下降。
根据本发明一优选实施例，所述设备更包括一气体管路，所述气体管路连接至所述顶壁与所述侧壁。
本发明还提供一种用以去除柔性基板中气泡的方法，所述柔性基板包括一底板与一涂覆在所述底板上的聚酰亚胺层，所述方法包括：
提供所述柔性基板至一设备内，所述设备包括：
一腔体，所述腔体包括一顶壁、一侧壁与一底壁，所述顶壁、所述侧壁与所述底壁定义出一容纳空间；
一加热板，所述加热板设置在所述容纳空间；及
一冷却管路，所述冷却管路嵌设在所述腔体的顶壁和侧壁的至少一者内；
利用所述加热板来加热所述柔性基板的底部，所述加热板被控制在介于550℃与750℃之间的温度；及
利用所述冷却管路来冷却所述柔性基板的顶部，所述冷却管路被控制在约室温的温度。
根据本发明一优选实施例，所述侧壁包括一进气口以及一与所述进气口相对设置的排气口，所述方法更包括利用所述进气口来注入氮气或惰性气体以冷却所述柔性基板，及利用所述排气口来排出从所述柔性基板挥发的挥发物。
根据本发明一优选实施例，所述设备更包括一气体管路，所述气体管路连接至所述顶壁与所述侧壁，所述方法更包括利用所述气体管路来注入氮气或惰性气体以冷却所述柔性基板。
 有益效果
相较于现有技术，本发明提出一种用以去除柔性基板中气泡的设备与方法。通过控制PI层的底部与顶部的温度，使得PI层的底部具有比PI层的顶部更快的气体挥发速度，因此可以有效率地排出PI层中的气泡。
 附图说明
图1为根据本发明一优选实施例的一种用于用以去除柔性基板中气泡的剖面侧视图。
 本发明的实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
请参照图1。图1为根据本发明一优选实施例的一种用于用以去除柔性基板中气泡的剖面侧视图。
本发明提出一种用以去除柔性基板30中气泡的设备1000。所述柔性基板30包括一底板(例如玻璃板)21与一涂覆在所述底板21上的聚酰亚胺(polyimide，PI)层22。所述设备1000包括：
一腔体11，所述腔体11包括一顶壁111、一侧壁112与一底壁113，所述顶壁111、所述侧壁112与所述底壁113定义出一容纳空间12；
一加热板13，所述加热板13设置在所述容纳空间12；及
一冷却管路14，所述冷却管路14嵌设在所述腔体11的顶壁111和侧壁112的至少一者内。
由于从PI层22挥发出来的挥发物主要是气体，气态挥发物的密度较小，挥发物会朝着向上的方向挥发。又，PI层22的底表面与底板(例如玻璃板)21接触，挥发物无法从PI层22的底表面朝着向下方向挥发。因此，挥发物是从PI层22的顶表面排出的。
本发明利用所述加热板13对PI层22的底表面进行加热，所述加热板13被控制在介于550℃与750℃之间的温度。另外，本发明利用所述冷却管路14对PI层22的顶表面进行冷却，所述冷却管路14中具有在其内循环流动的冷却流体，所述冷却流体被维持在约室温的温度。优选地，所述冷却流体可以是气体或液体，例如氮气或水。因此，本发明是利用加热板13及冷却管路14分别对PI层22的底表面与顶表面进行温度控制，以使得PI层22的底部具有比PI层22的顶部相对较高的温度。这使得相对高温的PI层22的底部具有比相对低温的PI层22的顶部更快的气体挥发速度，PI层22的最底层中的气泡会先向上挥发被排出。PI层22的最底层中的气泡被排出后，PI层22往上逐层中的气泡才逐渐挥发被排出。本发明能有效率地排出PI层22中的气泡。
在本实施例中，所述侧壁112包括一进气口1121以及一与所述进气口1121相对设置的排气口1122。在PI层22被涂覆到底板(例如玻璃板)21之后，由PI层22与底板21构成的柔性基板30被放置到所述设备1000内。氮气或其他惰性气体从进气口1121被注入到所述容纳空间12，并从所述排气口1122被排出，亦即所述氮气或惰性气体在设备1000中循环(如箭头50所示)，以维持设备1000中的热能。所述氮气或惰性气体可以起到防止PI层22氧化的作用。在所述PI层22已经完全固化后，所述注入的氮气或惰性气体亦可以用于冷却所述柔性基板30。另外，所述排气口1122可用以排放从所述PI层22挥发出来的挥发物。
所述设备1000更包括一气体管路16，所述气体管路16连接至所述顶壁111与所述侧壁112。氮气或其他惰性气体从所述气体管路16被注入到所述容纳空间12，所述氮气或惰性气体可以起到防止PI氧化的作用。在所述PI层22已经完全固化后，所述注入的氮气或惰性气体亦可以用于冷却所述柔性基板30。
所述设备1000更包括多个支撑销(supporting pin)15，所述支撑销15可移动地穿过被形成在所述加热板13中的穿孔，而能够将设置在所述加热板13上的所述柔性基板30予以上升或下降。例如，当柔性基板30被传送至所述设备100中时，所述支撑销15会先上升且所述支撑销15的顶部因此接触抵顶到所述柔性基板30的底表面，然后所述支撑销15再下降到一适当高度，使得所述柔性基板30被支撑在加热板13。当所述柔性基板30在所述设备1000中的所有程序结束后，所述支撑销15会支撑住所述柔性基板30并将所述柔性基板30先上升到一适当高度，然后所述柔性基板30再被移出到所述设备1000外。
所述冷却管路14可以仅嵌设在顶壁111内，仅嵌设在侧壁112内，或同时嵌设在此两者内。只要所述冷却管路14可以达到控制PI层22的顶部的温度，本发明不对冷却管路14的设置位置作具体限定。
本发明还提出一种用以去除柔性基板30中气泡的方法。所述柔性基板30包括一底板(例如玻璃板)21与一涂覆在所述底板上的聚酰亚胺层22。所述方法包括：
提供所述柔性基板30至一设备1000内，所述设备1000包括：
一腔体11，所述腔体11包括一顶壁111、一侧壁112与一底壁113，所述顶壁111、所述侧壁112与所述底壁113定义出一容纳空间12；
一加热板13，所述加热板13设置在所述容纳空间12；及
一冷却管路14，所述冷却管路14嵌设在所述腔体11的顶壁111和侧壁112的至少一者内；
利用所述加热板13来加热所述柔性基板30的底部，所述加热板13被控制在介于550℃与750℃之间的温度；及
利用所述冷却管路14来冷却所述柔性基板30的顶部，所述冷却管路14被控制在约室温的温度。
在本实施例中，所述侧壁112包括一进气口1121以及一与所述进气口1121相对设置的排气口1122，所述方法更包括利用所述进气口1121来注入氮气或惰性气体以冷却所述柔性基板30，及利用所述排气口1122来排出从所述柔性基板30挥发的挥发物。
在本实施例中，所述设备1000更包括一气体管路16，所述气体管路16连接至所述顶壁111与所述侧壁112，所述方法更包括利用所述气体管路16来注入氮气或惰性气体以冷却所述柔性基板。
相较于现有技术，本发明提出一种用以去除柔性基板中气泡的设备与方法。通过控制PI层的底部与顶部的温度，使得PI层的底部具有比PI层的顶部更快的气体挥发速度，因此可以有效率地排出PI层中的气泡。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (12)

  1. 一种用以去除柔性基板中气泡的设备，所述柔性基板包括一底板与一涂覆在所述底板上的聚酰亚胺层，所述设备包括：
    一腔体，所述腔体包括一顶壁、一侧壁与一底壁，所述顶壁、所述侧壁与所述底壁定义出一容纳空间；
    一加热板，所述加热板设置在所述容纳空间；及
    一冷却管路，所述冷却管路同时嵌设在所述腔体的顶壁和侧壁内；
    其中所述冷却管路中具有在其内循环流动的冷却流体，所述冷却流体被维持在约室温的温度。
  2. 根据权利要求1所述的用以去除柔性基板中气泡的设备，其特征在于，所述侧壁包括一进气口以及一与所述进气口相对设置的排气口。
  3. 根据权利要求1所述的用以去除柔性基板中气泡的设备，其特征在于，所述设备更包括多个支撑销，所述支撑销可移动地穿过被形成在所述加热板中的穿孔，而能够将设置在所述加热板上的所述柔性基板予以上升或下降。
  4. 根据权利要求1所述的用以去除柔性基板中气泡的设备，其特征在于，所述设备更包括一气体管路，所述气体管路连接至所述顶壁与所述侧壁。
  5. 一种用以去除柔性基板中气泡的设备，所述柔性基板包括一底板与一涂覆在所述底板上的聚酰亚胺层，所述设备包括：
    一腔体，所述腔体包括一顶壁、一侧壁与一底壁，所述顶壁、所述侧壁与所述底壁定义出一容纳空间；
    一加热板，所述加热板设置在所述容纳空间；及
    一冷却管路，所述冷却管路嵌设在所述腔体的顶壁和侧壁的至少一者内。
  6. 根据权利要求5所述的用以去除柔性基板中气泡的设备，其特征在于，所述侧壁包括一进气口以及一与所述进气口相对设置的排气口。
  7. 根据权利要求5所述的用以去除柔性基板中气泡的设备，其特征在于，所述冷却管路中具有在其内循环流动的冷却流体，所述冷却流体被维持在约室温的温度。
  8. 根据权利要求5所述的用以去除柔性基板中气泡的设备，其特征在于，所述设备更包括多个支撑销，所述支撑销可移动地穿过被形成在所述加热板中的穿孔，而能够将设置在所述加热板上的所述柔性基板予以上升或下降。
  9. 根据权利要求5所述的用以去除柔性基板中气泡的设备，其特征在于，所述设备更包括一气体管路，所述气体管路连接至所述顶壁与所述侧壁。
  10. 一种用以去除柔性基板中气泡的方法，所述柔性基板包括一底板与一涂覆在所述底板上的聚酰亚胺层，所述方法包括：
    提供所述柔性基板至一设备内，所述设备包括：
    一腔体，所述腔体包括一顶壁、一侧壁与一底壁，所述顶壁、所述侧壁与所述底壁定义出一容纳空间；
    一加热板，所述加热板设置在所述容纳空间；及
    一冷却管路，所述冷却管路嵌设在所述腔体的顶壁和侧壁的至少一者内；
    利用所述加热板来加热所述柔性基板的底部，所述加热板被控制在介于550℃与750℃之间的温度；及
    利用所述冷却管路来冷却所述柔性基板的顶部，所述冷却管路被控制在约室温的温度。
  11. 根据权利要求10所述的用以去除柔性基板中气泡的方法，其特征在于，所述侧壁包括一进气口以及一与所述进气口相对设置的排气口，所述方法更包括利用所述进气口来注入氮气或惰性气体以冷却所述柔性基板，及利用所述排气口来排出从所述柔性基板挥发的挥发物。
  12. 据权利要求10所述的用以去除柔性基板中气泡的方法，其特征在于，所述设备更包括一气体管路，所述气体管路连接至所述顶壁与所述侧壁，所述方法更包括利用所述气体管路来注入氮气或惰性气体以冷却所述柔性基板。
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