WO2020151542A1 - 内衬冷却组件、反应腔室及半导体加工设备 - Google Patents

内衬冷却组件、反应腔室及半导体加工设备 Download PDF

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Publication number
WO2020151542A1
WO2020151542A1 PCT/CN2020/072184 CN2020072184W WO2020151542A1 WO 2020151542 A1 WO2020151542 A1 WO 2020151542A1 CN 2020072184 W CN2020072184 W CN 2020072184W WO 2020151542 A1 WO2020151542 A1 WO 2020151542A1
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WO
WIPO (PCT)
Prior art keywords
channel
cooling
liner
cylindrical body
cooling assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2020/072184
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English (en)
French (fr)
Inventor
常青
李冰
边国栋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Naura Microelectronics Equipment Co Ltd
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201910062064.7A external-priority patent/CN109735814B/zh
Priority claimed from CN201920110253.2U external-priority patent/CN209890728U/zh
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Priority to JP2021542550A priority Critical patent/JP7710987B2/ja
Priority to KR1020217023726A priority patent/KR102641209B1/ko
Publication of WO2020151542A1 publication Critical patent/WO2020151542A1/zh
Priority to US17/384,240 priority patent/US12278096B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements

Definitions

  • the invention relates to the technical field of semiconductor manufacturing, in particular to a lining cooling component, a reaction chamber and semiconductor processing equipment.
  • PVD Physical Vapor Deposition
  • Sputtering sputtering
  • inert gas such as argon
  • the high voltage reduces the inert gas Ionization generates plasma.
  • the magnetic field enhances the ability to confine electrons so that the generated plasma bombards the target material, depositing atoms or ions of the target material on the wafer to form a thin film.
  • the existing magnetron sputtering equipment is shown in Figure 1.
  • the equipment includes a reaction chamber 1, a target 2 is arranged in the reaction chamber 1, and a base 5 is arranged under the target 2 for carrying Wafer 6; the target 2 is provided with a cooling cavity 3 made of insulating material, and cooling water is added to the closed space formed by the cooling cavity 3 and the target 2 for cooling the target 2.
  • a rotatable magnetron 4 is also provided in the enclosed space.
  • the power supply applies a bias voltage to the target material 2 to make it a negative bias voltage relative to the grounded reaction chamber 1, which can ionize the inert gas flowing into the reaction chamber 1 to form plasma At the same time, it can attract positively charged plasma to the target 2.
  • the plasma energy is high enough and bombards the target 2 under the action of the magnetic field formed by the rotating magnetron 4, metal atoms or metal ions will escape the surface of the target and be deposited on the wafer 6 by diffusion.
  • an inner liner (Shield) 9, a cover plate (Cover ring) 8 and a deposition ring (Dep-ring) 7 are also provided in the reaction chamber 1 to shield the metal atoms and metal ions from contaminating the reaction chamber.
  • the metal ions and atoms escaping from the target 2 will carry a huge amount of heat, which will increase the temperature of the lining 9. Once the temperature of the lining 9 exceeds the temperature range of the process reaction, It will not be conducive to the progress of the process, and a series of problems such as film stress substandard and whisker defects may occur.
  • the embodiments of the present invention provide a lining cooling component and semiconductor processing equipment, which can solve the problems of limited cooling capacity, slow heat conduction rate, low efficiency, high cost, and high processing difficulty.
  • an inner liner cooling assembly including: an adapter; the adapter is configured to fix the inner liner in the cavity, and the adapter has an outer side and The first surface and the second surface opposite to the bottom surface of the bottom wall, wherein there is a predetermined gap between the first surface and the outer side surface of the lining, and the second surface is opposite to the bottom surface of the bottom wall of the lining In contact with each other; and, a cooling channel for transmitting a cooling medium is provided in the adapter to cool the inner lining.
  • the adapter includes a cylindrical body surrounding the inner liner and a support part connected to the cylindrical body for supporting the bottom wall of the inner liner; wherein The inner side surface is used as the first surface; the surface of the support portion that contacts the bottom surface of the bottom wall of the inner liner is used as the second surface;
  • the cooling passage is provided inside the cylindrical main body, or inside the cylindrical main body and the support part.
  • the cooling channel includes a first channel disposed inside the cylindrical body, and the first channel surrounds in a predetermined distribution manner in the circumferential direction of the cylindrical body.
  • the first channel surrounds and is annular in the circumferential direction of the cylindrical body, and one end of the first channel along the axial direction of the cylindrical body extends to a position close to the support portion .
  • one end of the first channel close to the supporting portion penetrates the bottom of the cylindrical body, and an annular blocking member is further provided at the bottom of the cylindrical body, and the annular blocking member is connected to the bottom of the cylindrical body.
  • the cylindrical body is hermetically connected to seal the first passage.
  • the cooling channel further includes a second channel disposed inside the supporting portion and surrounding in a predetermined distribution manner in the circumferential direction of the supporting portion, and the second channel is connected to the first channel through.
  • the inner diameter of the support portion is greater than or equal to the inner diameter of the inner liner.
  • the adaptor further includes a fixing part connected to an end of the cylindrical body away from the support part, the fixing part is used to be fixedly connected to the cavity; and the cooling channel further includes Arranged in the fixing part, an inlet channel for the cooling medium to pass in and an outlet channel for the cooling medium to pass out, each end of the inlet channel and the outlet channel is connected to the first The channels are connected, and the other ends of the inlet channel and the outlet channel are both located on the surface of the fixing part located outside the chamber.
  • the inlet channel and the outlet channel are arranged obliquely with respect to the axial direction of the cylindrical body; or,
  • the axial direction of the inlet channel and the outlet channel and the cylindrical body are perpendicular to each other.
  • the cooling passage further includes two connecting passages provided in the cylindrical body, and the two connecting passages are used to respectively communicate the inlet passage and the outlet passage with the first passage.
  • a joint is provided at the other end of each of the inlet channel and the outlet channel to respectively connect with the inlet pipeline and the return pipeline.
  • the fixing part is arranged between the side wall of the chamber and an insulating member located above the side wall, and between the fixing part and the side wall of the chamber, and the A sealing ring is arranged between the fixing part and the insulating member.
  • a reaction chamber which includes a cavity and an inner liner provided in the cavity, and further includes the liner cooling assembly as described above.
  • the reaction chamber includes a magnetron sputtering reaction chamber.
  • a semiconductor processing equipment including: the lining cooling assembly as described above.
  • the adapter is provided with a cooling channel, and the adapter has a first surface and a second surface opposite to the outer side surface of the lining and the bottom surface of the bottom wall respectively, and both of them can be combined with the lining at the same time.
  • Heat conduction which can not only improve the heat transfer efficiency, but also achieve uniform cooling of the lining, avoiding the local temperature of the lining from being too high, thereby effectively preventing the lining from releasing impurities due to high temperature, thereby improving product quality.
  • the thermal contact area between the adapter and the inner liner can be increased, and the heat transfer efficiency can be further improved, especially the heat transfer efficiency of the inner substrate part, thereby improving
  • the temperature rise of the wafer located near the inner substrate part due to magnetron sputtering avoids the influence of the temperature rise in the reaction area on the wafer and the film.
  • the adapter has a simple structure and high cooling efficiency, without the need for a sealing ring to seal the cooling pipeline. , Reducing the risk of leakage.
  • the reaction chamber provided by the present invention can not only improve the heat transfer efficiency and process quality by using the above-mentioned lining cooling assembly provided by the present invention, but also reduce the processing steps and difficulty, the difficulty of cleaning, and the increase in cooling pipelines. Difficulty in disassembly and assembly.
  • the semiconductor processing equipment provided by the present invention by using the above-mentioned reaction chamber provided by the present invention, can not only improve heat transfer efficiency and process quality, but also reduce processing steps and difficulty, cleaning difficulty, and disassembly caused by increasing cooling pipelines. Difficulty of installation.
  • Fig. 1 is a schematic diagram of a magnetron sputtering device in the prior art
  • Figure 2 is a cross-sectional view of the lining cooling assembly provided according to an embodiment of the present invention after installation;
  • Figure 3 is a cross-sectional view of a liner cooling assembly according to an embodiment of the present invention.
  • Figure 4 is another cross-sectional view of a liner cooling assembly according to an embodiment of the present invention.
  • FIG. 5 is a cross-sectional view of a cooling channel of a lining cooling assembly according to an embodiment of the present invention.
  • Fig. 6 is a cross-sectional view of another cooling channel of the lining cooling assembly according to an embodiment of the present invention.
  • an embodiment of the present invention provides an inner liner cooling assembly, which includes an adapter 20.
  • the adapter 20 is configured to be able to accommodate the lining 12 in the space formed by the adapter 20 and fix the lining 12 in the cavity formed by the cavity 10.
  • the adapter 20 is fixedly connected to the inner liner 12, and the fixed connection includes a threaded connection.
  • the inner liner 12 is fixed to the adapter 20 by screws.
  • Both the adapter 20 and the inner lining 12 are made of metal.
  • the adapter 20 can have a variety of structures.
  • the adapter 20 has a first surface 2011 and a second surface 2012 opposite to the outer side surface of the inner liner 12 and the bottom surface of the bottom wall, respectively.
  • the adapter 20 includes a cylindrical body 201 surrounding the inner liner 12 and a support portion 202 connected to the cylindrical body 201 for supporting the bottom wall of the inner liner 12;
  • the inner side surface is used as the aforementioned first surface 2011;
  • the surface of the support portion 202 that is in contact with the bottom surface of the bottom wall of the lining 12 is used as the aforementioned second surface 2012.
  • the cooling channel 30 is provided inside the cylindrical body 201.
  • the cooling channel 30 may also be provided inside the cylindrical body 201 and the supporting portion 202.
  • cylindrical body 201 and the supporting portion 202 may be an integral structure, for example, manufactured by integral molding, or may be a separate structure, for example, manufactured by welding.
  • the adapter 20 further includes a fixing portion 203 connected to an end of the cylindrical body 201 away from the supporting portion 202, and the fixing portion 203 is used for fixed connection with the cavity.
  • the fixing part 203 is disposed between the side wall of the cavity 10 and the insulating member 11 located above the side wall, that is, the fixing part 203 is located outside the cavity formed by the cavity 10, and the cylindrical body 201 and the support The parts 202 are all located inside the aforementioned chamber.
  • a sealing ring 15 is provided between the fixing portion 203 and the side wall of the cavity 10, and a sealing ring 14 is provided between the fixing portion 203 and the insulating member 11 to ensure the vacuum inside the cavity.
  • the orthographic projection shape of the fixing portion 203 on the radial cross section of the cavity 1 is a square, and the four corners of the square are chamfered.
  • the fixing portion 203 and the cylindrical body 201 may be an integral structure, for example, manufactured by integral molding, or may be a separate structure, for example, manufactured by welding.
  • the adapter 20 is provided with a cooling channel 30, and the adapter uses the aforementioned first surface 2011 and the second surface 2012 to conduct heat conduction with the side and bottom surfaces of the lining 12 at the same time.
  • the heat transfer efficiency is improved, and uniform cooling of the inner lining 12 can be achieved, and the local temperature of the inner lining 12 can be prevented from being too high, thereby effectively preventing the inner lining from releasing impurities due to high temperature, thereby improving product quality.
  • the thermal contact area between the adapter 20 and the inner liner 12 can be increased, and the heat transfer efficiency is further improved, especially the heat transfer efficiency of the inner liner. Therefore, the temperature rise of the wafer located near the inner substrate portion due to magnetron sputtering can be improved, and the influence of the temperature rise of the reaction area on the wafer and the film can be avoided.
  • the cooling channel 30 in the adapter 20 it is possible to reduce the processing steps and difficulty, the difficulty of cleaning, and the difficulty of disassembly and assembly due to the increase of the cooling pipeline.
  • the adapter has a simple structure and high cooling efficiency, and no sealing ring is required for the cooling pipeline. The sealing reduces the risk of leakage.
  • the width of the gap 204 may be 0.05-0.2 mm, and within this range, the requirements for heat conduction and reserved space can be met at the same time.
  • the supporting portion 202 has a circular ring shape. In order to facilitate heat transfer, the thickness of the supporting portion 202 cannot be too large. In addition, in order to facilitate the lifting of the wafer, the inner diameter of the support portion 202 is not less than the inner diameter of the liner 12. After the inner liner 12 is installed in the adapter 20, it is supported in the vertical direction by the supporting portion 202. By using the supporting portion 202 to support the inner liner 12, the bottom surface of the bottom wall of the inner liner 12 can be closely attached to the second surface 2012 by the action of gravity, so that the heat transfer efficiency can be improved.
  • positioning is performed by the inner wall of the fixing portion 203 and the outer wall of the inner liner 12 to ensure that the two are coaxially arranged.
  • the cooling channel 30 includes a first channel 301 provided inside the cylindrical body 201, and the first channel 301 surrounds the cylindrical body 201 in a predetermined distribution manner.
  • the cooling channels 30 can be distributed in various ways.
  • the first channel 301 surrounds and is annular in the circumferential direction of the cylindrical body 201, and the first channel 301 is along one end of the cylindrical body 201 in the axial direction. (The end facing downward in FIG. 3) extends to a position close to the supporting portion 202 to achieve the purpose of improving the heat transfer efficiency with the bottom wall of the substrate 12.
  • the first channel 301 can have a variety of processing methods.
  • the end of the annular channel close to the support portion 202 penetrates the bottom of the cylindrical body 201, that is, the cylindrical body 201 can be processed with an opening facing downward and a concave shape.
  • a groove-shaped annular channel, and an annular blocking member 205 is further provided at the bottom of the cylindrical main body 201, and the annular blocking member 205 is sealed to the cylindrical main body 201 to seal the above-mentioned annular channel.
  • the annular plug 205 is connected to the cylindrical main body 201 in a sealed manner, for example, by welding, which is stable and reliable and will not leak.
  • the cooling channel 30 further includes a second channel 304, which is arranged inside the support portion 202 and surrounds the support portion 202 in a predetermined distribution manner.
  • the second channel 304 communicates with the first channel 301. With the second channel 304, the cooling efficiency of the inner substrate portion can be further improved.
  • the cooling channel 30 further includes a fixed part 203 for supplying a cooling medium.
  • the inlet channel 302 through and the outlet channel 302' for the cooling medium to pass out, each end of the inlet channel 302 and the outlet channel 302' are connected to the first channel 301, and the inlet channel 302 and the outlet channel 302' are different from each other.
  • One end is located on the surface of the fixing part 203 outside the chamber, for example, the outer surface of the fixing part 203.
  • the axial directions of the inlet channel 302 and the outlet channel 302' and the cylindrical body 201 are perpendicular to each other.
  • the cooling channel 30 further includes two connecting channels 303 arranged in the cylindrical body 201, and the two connecting channels 303 are used to respectively connect the inlet channel 302 and the outlet channel 302' with the first channel 301.
  • the axial directions of the two connecting channels 303 and the cylindrical body 201 are parallel to each other.
  • the two connecting channels 303 may also be inclined with respect to the axial direction of the cylindrical body 201.
  • two connecting channels 303 may not be provided, and the inlet channel 302 and the outlet channel 302' are directly connected to the first channel 301.
  • the cooling medium for example, cooling water
  • the cooling source enters the first channel 301 through the inlet channel 302 and a connecting channel 303 connected thereto in sequence, and then sequentially passes through another connecting channel 303 and the outlet channel 302' Return to the cooling source.
  • the inlet channel 302 and the outlet channel 302' are arranged side by side.
  • the inlet channel 302 and the outlet channel 302' can also be arranged on both sides of the liner 12 opposite to each other.
  • a joint 16 is provided at the other end of the inlet channel 302 and the outlet channel 302' to connect to the inlet and return lines of the cooling source respectively.
  • a connection method such as welding can be used and a sealing ring can be used to connect and seal the joint 16.
  • the inlet channel 302 and the outlet channel 302' are inclined with respect to the axial direction of the cylindrical body 201, and the downwardly inclined ends of the inlet channel 302 and the outlet channel 302' are both
  • the first channel 301 communicates, and the upwardly inclined end is located on the surface of the fixing part 203 located outside the chamber for connection with a cooling source.
  • the arrangement of the cooling channel 30 is not limited to the above-mentioned embodiment, and it can be arranged in different forms according to the needs of the cooling part, which will not be repeated here.
  • the adapter is provided with a cooling channel, and the adapter has a first surface and a second surface respectively opposite to the outer side surface of the lining and the bottom surface of the bottom wall. It can conduct heat conduction with the side and bottom surface of the lining at the same time, which not only improves the heat transfer efficiency, but also realizes the uniform cooling of the lining, avoids the local temperature of the lining from being too high, and effectively prevents the lining from releasing impurities due to high temperature. improve product quality.
  • the thermal contact area between the adapter and the inner liner can be increased, and the heat transfer efficiency can be further improved, especially the heat transfer efficiency of the inner substrate part, thereby improving
  • the temperature rise of the wafer located near the inner substrate part due to magnetron sputtering avoids the influence of the temperature rise in the reaction area on the wafer and the film.
  • the adapter has a simple structure and high cooling efficiency, without the need for a sealing ring to seal the cooling pipeline. , Reducing the risk of leakage.
  • an embodiment of the present invention also provides a reaction chamber, which includes a cavity 10 and an inner liner 12 provided in the cavity 10, and a reaction chamber as in any of the above embodiments. Lined with cooling components.
  • the reaction chamber includes a magnetron sputtering reaction chamber.
  • the reaction chamber can also be any other chamber that needs to be lined.
  • reaction chamber further includes a cover plate 13, a support structure for supporting the cover plate 13 is provided at the lower end of the lining 12, and the cover plate 13 and the lining 12 form a closed reaction space.
  • the reaction chamber provided by the embodiment of the present invention by using the above-mentioned lining cooling assembly provided by the embodiment of the present invention, can not only improve the heat transfer efficiency and improve the process quality, but also reduce the processing steps and difficulty, the difficulty of cleaning, and the increase in cooling. Difficulty in disassembly and assembly caused by pipelines.
  • the embodiment of the present invention further provides a semiconductor processing equipment, which includes a reaction chamber, which is similar to the reaction chamber in the above-mentioned embodiment.
  • the semiconductor processing equipment is, for example, a PVD equipment such as a magnetron sputtering equipment.
  • the semiconductor processing equipment provided by the embodiments of the present invention by using the above-mentioned reaction chamber provided by the embodiments of the present invention, can not only improve the heat transfer efficiency, improve the process quality, but also reduce the processing steps and difficulty, the difficulty of cleaning, and the increase of cooling pipes. Difficulty in disassembly and assembly caused by road.
  • fixed connection can be understood as a fixed connection that can be detached (for example, connected by bolts or screws), or It is understood as: a non-detachable fixed connection (such as riveting, welding), of course, the mutual fixed connection can also be replaced by an integrated structure (such as manufactured by a casting process) (except that the integrated forming process obviously cannot be used).
  • any of the technical solutions disclosed in the present invention to indicate a positional relationship or shape include a state or shape similar to, similar to, or close to it, unless otherwise stated.
  • Any component provided by the present invention can be assembled from a plurality of separate components, or can be a single component manufactured by an integral forming process.

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  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
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  • Physical Vapour Deposition (AREA)

Abstract

一种内衬冷却组件，包括：适配器（20），该适配器（20）被设置为将内衬（12）固定在腔室内，且适配器（20）具有分别与内衬（12）的外侧面和底壁底面相对的第一表面（2011）和第二表面（2012），其中，第一表面（2011）与内衬（12）的外侧面之间具有预设的间隙（204），第二表面（2012）与内衬（12）的底壁底面相接触；并且，适配器（20）中设置有用于传输冷却介质的冷却通道（30），用以对内衬（12）进行冷却。还公开了一种反应腔室及半导体加工设备。

Description

内衬冷却组件、反应腔室及半导体加工设备 技术领域
本发明涉及半导体制造技术领域，尤其涉及一种内衬冷却组件、反应腔室及半导体加工设备。
背景技术
物理气相沉积(Physical Vapor Deposition，以下简称PVD)技术被广泛应用于半导体领域，其采用溅射(Sputtering)沉积技术，在晶片和靶材之间通入氩气等惰性气体，高电压将惰性气体电离产生等离子体，通过磁场增强束缚电子的能力使产生的等离子体轰击靶材，将靶材材料的原子或离子沉积在晶片上形成薄膜。现有的磁控溅射设备如图1所示，该设备包括反应腔室1，在反应腔室1内设置有靶材2，且在靶材2的下方设置有基座5，用以承载晶片6；靶材2上方设置有绝缘材料制作的冷却腔体3，在该冷却腔体3和靶材2构成的封闭空间中添加有冷却水，用于冷却靶材2。在该封闭空间中还设置有可旋转的磁控管4。溅射工艺时，电源施加偏压至靶材2，使其相对于接地的反应腔室1的腔体成为负偏压，该负偏压能够将通入反应腔室1的惰性气体电离形成等离子体，同时能够将带正电的等离子体吸引至靶材2。当等离子体的能量足够高并在由旋转的磁控管4形成的磁场作用下轰击靶材2时，会使金属原子或者金属离子逸出靶材表面，并通过扩散沉积在晶片6上。
但是，即使有磁控管4对金属原子的束缚作用，仍有大量的金属原子和金属离子会沉积到反应腔室1的内壁上，脱落后污染晶片和反应腔室1。为此，在反应腔室1内还设置有内衬(Shield)9、盖板(Cover ring)8和沉积环(Dep-ring)7，用以遮挡污染反应腔室的金属原子和金属离子。在磁控溅射过程中，自靶材2逸出的金属离子和原子会携带巨大的热量，这将使内衬 9的温度升高，一旦内衬9的温度超出了工艺反应的温度区间，将不利于工艺的进行，并可能出现薄膜应力不达标，晶须缺陷等一系列的问题。
目前，虽然采用多种方式对内衬9进行冷却等处理，但是这些方式存在冷却能力有限，导热速率慢、效率低，成本高，加工难度大等问题。
发明内容
有鉴于此，本发明实施例提供一种内衬冷却组件及半导体加工设备，其可以解决冷却能力有限，导热速率慢、效率低，成本高，加工难度大等的问题。
根据本发明实施例的一个方面，提供一种内衬冷却组件，包括：适配器；所述适配器被设置为将内衬固定在腔室内，且所述适配器具有分别与所述内衬的外侧面和底壁底面相对的第一表面和第二表面，其中，所述第一表面与所述内衬的外侧面之间具有预设的间隙，所述第二表面与所述内衬的底壁底面相接触；并且，所述适配器中设置有用于传输冷却介质的冷却通道，用以对所述内衬进行冷却。
可选地，所述适配器包括环绕在所述内衬周围的筒状主体和与所述筒状主体连接，用于支撑所述内衬的底壁的支撑部；其中，所述筒状主体的内侧面用作所述第一表面；所述支撑部的与所述内衬的底壁底面相接触的表面用作所述第二表面；
所述冷却通道设置在所述筒状主体内部，或者所述筒状主体和所述支撑部的内部。
可选地，所述冷却通道包括设置在所述筒状主体内部的第一通道，所述第一通道在所述筒状主体的周向上按预设分布方式环绕。
可选地，所述第一通道沿所述筒状主体的周向环绕且呈环状，所述第一通道沿所述筒状主体的轴向的一端延伸至靠近所述支撑部的位置处。
可选地，所述第一通道靠近所述支撑部的一端贯通所述筒状主体的底部，且在所述筒状主体的底部还设置有环形封堵件，所述环形封堵件与所述筒状主体密封连接，用以密封所述第一通道。
可选地，所述冷却通道还包括设置在所述支撑部内部，且在所述支撑部的周向上按预设分布方式环绕的第二通道，所述第二通道与所述第一通道相连通。
可选地，所述支撑部的内径大于或等于所述内衬的内径。
可选地，所述适配器还包括与所述筒状主体的远离所述支撑部的一端连接的固定部，所述固定部用于与所述腔室固定连接；并且，所述冷却通道还包括设置在所述固定部中，用于供所述冷却媒介通入的入口通道和用于供所述冷却媒介传出的出口通道，所述入口通道和出口通道各自的一端均与所述第一通道连通，所述入口通道和出口通道各自的另一端均位于所述固定部的位于所述腔室外部的表面上。
可选地，所述入口通道和出口通道相对于所述筒状主体的轴向倾斜设置；或者，
所述入口通道和出口通道与所述筒状主体的轴向相互垂直。
可选地，所述冷却通道还包括设置在所述筒状主体中的两个连接通道，两个所述连接通道用于分别将所述入口通道和出口通道与所述第一通道相连通。
可选地，在所述入口通道和出口通道各自的另一端均设置有接头，用以分别与进流管路和回流管路连接。
可选地，所述固定部设置在所述腔室的侧壁与位于所述侧壁上方的绝缘件之间，且在所述固定部与所述腔室的侧壁之间，以及所述固定部与所述绝缘件之间均设置有密封圈。
根据本发明实施例的另一方面，提供一种反应腔室，包括腔体和设置在 所述腔体中的内衬，还包括如上所述的内衬冷却组件。
可选地，所述反应腔室包括磁控溅射反应腔室。
根据本发明实施例的另一方面，提供一种半导体加工设备，包括：如上所述的内衬冷却组件。
本发明提供的内衬冷却组件，其适配器中设置有冷却通道，且该适配器具有分别与内衬的外侧面和底壁底面相对的第一表面和第二表面，二者可以同时与内衬进行热传导，这不仅可以提高传热效率，而且可以实现内衬的均匀冷却，避免内衬的局部温度过高，从而有效避免内衬因高温释放杂质，进而提高产品质量。而且，通过使第二表面与内衬的底壁底面相接触，能够增加适配器与内衬之间的热接触面积，进一步提高传热效率，尤其是提高内衬底部的传热效率，从而可以改善位于内衬底部附近的晶片由于磁控溅射引起的升温现象，避免反应区域温度升高对晶片和薄膜的影响。另外，通过在适配器中设置冷却通道，可以减少加工步骤和难度、清洗难度以及由于增加冷却管路造成的拆装难度，同时适配器的结构简单、冷却效率高，无需密封圈对冷却管路的密封，减少了泄漏的风险。
本发明提供的反应腔室，其通过采用本发明提供的上述内衬冷却组件，不仅可以提高传热效率，提高工艺质量，而且可以减少加工步骤和难度、清洗难度以及由于增加冷却管路造成的拆装难度。
本发明提供的半导体加工设备，其通过采用本发明提供的上述反应腔室，不仅可以提高传热效率，提高工艺质量，而且可以减少加工步骤和难度、清洗难度以及由于增加冷却管路造成的拆装难度。
本发明实施例附加的方面和优点将在下面的描述中部分给出，这些将从下面的描述中变得明显，或通过本发明的实践了解到。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实 施例或现有技术描述中所需要使用的附图作一简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其它的附图：
图1为现有技术中的磁控溅射设备的示意图；
图2为根据本发明实施例提供的内衬冷却组件在安装后的剖视图；
图3为根据本发明实施例提供的内衬冷却组件的一种剖视图；
图4为根据本发明实施例提供的内衬冷却组件的另一种剖视图；
图5为根据本发明实施例提供的内衬冷却组件的一种冷却通道的剖视图；
图6为根据本发明实施例提供的内衬冷却组件的另一种冷却通道的剖视图。
具体实施方式
下面参照附图对本发明进行更全面的描述，其中说明本发明的示例性实施例。下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。下面结合图和实施例对本发明的技术方案进行多方面的描述。
下文为了叙述方便，下文中所称的“左”、“右”、“上”、“下”与附图本身的左、右、上、下方向一致。下文中的“第一”、“第二”等，仅用于描述上相区别，并没有其它特殊的含义。
请参阅图2，本发明实施例提供一种内衬冷却组件，其包括适配器20。该适配器20被设置为能够将内衬12容纳于其所形成的空间内，且将内衬12固定在由腔体10构成的腔室内。具体地，适配器20与内衬12固定连接，固 定连接包括螺纹连接等方式，例如使用螺钉将内衬12固定在适配器20上。适配器20与内衬12的材质都为金属。
适配器20可以有多种结构，在本实施例中，适配器20具有分别与内衬12的外侧面和底壁底面相对的第一表面2011和第二表面2012，其中，第一表面2011与内衬12的外侧面之间具有预设的间隙204，第二表面2012与内衬12的底壁底面相接触；并且，适配器20中设置有用于传输冷却介质的冷却通道30，用以对内衬12进行冷却。
在一个实施例中，适配器20包括环绕在内衬12周围的筒状主体201和与该筒状主体201连接，用于支撑内衬12的底壁的支撑部202；其中，筒状主体201的内侧面用作上述第一表面2011；支撑部202的与内衬12的底壁底面相接触的表面用作上述第二表面2012。
在一个实施例中，如图3所示，冷却通道30设置在筒状主体201的内部。
在另一个实施例中，如图4所示，冷却通道30也可以设置在筒状主体201和支撑部202的内部。
可选的，筒状主体201和支撑部202可以是一体式结构，例如采用一体成型的方式制作，或者也可以是分体式结构，例如采用焊接的方式制作。
在一个实施例中，适配器20还包括与筒状主体201的远离支撑部202的一端连接的固定部203，该固定部203用于与腔室固定连接。具体地，固定部203设置在腔体10的侧壁与位于该侧壁上方的绝缘件11之间，即，固定部203位于由腔体10构成的腔室外部，而筒状主体201和支撑部202均位于上述腔室内部。并且，在固定部203与腔体10的侧壁之间设置有密封圈15，以及在固定部203与绝缘件11之间设置有密封圈14，以保证腔室内部的真空度。
可选的，固定部203在腔体1的径向截面上的正投影形状为正方形，且 正方形的四个角具有倒角。
可选的，固定部203与筒状主体201可以是一体式结构，例如采用一体成型的方式制作，或者也可以是分体式结构，例如采用焊接的方式制作。
本发明实施例提供的内衬冷却组件，其适配器20中设置有冷却通道30，且该适配器利用上述第一表面2011和第二表面2012同时与内衬12的侧面和底面进行热传导，这不仅可以提高传热效率，而且可以实现内衬12的均匀冷却，避免内衬12的局部温度过高，从而有效避免内衬因高温释放杂质，进而提高产品质量。而且，通过使第二表面2012与内衬12的底壁底面相接触，能够增加适配器20与内衬12之间的热接触面积，进一步提高传热效率，尤其是提高内衬底部的传热效率，从而可以改善位于内衬底部附近的晶片由于磁控溅射引起的升温现象，避免反应区域温度升高对晶片和薄膜的影响。另外，通过在适配器20中设置冷却通道30，可以减少加工步骤和难度、清洗难度以及由于增加冷却管路造成的拆装难度，同时适配器的结构简单、冷却效率高，无需密封圈对冷却管路的密封，减少了泄漏的风险。
而且，上述第一表面2011与内衬12的侧壁之间具有预设的间隙204。该间隙204的大小满足适配器20能够与内衬12进行热传导的要求，同时又能够在适配器20与内衬12之间预留出足够的空间，以解决高温时的热膨胀和内衬12的变形等问题，同时满足安装条件。例如，间隙204的宽度可以为0.05-0.2mm，在该范围内，可以同时满足对热传导和预留空间的要求。
在一个实施例中，支撑部202呈圆环形，为了便于传热，支撑部202的厚度不能过大。另外，为了方便晶片的提升，支撑部202的内径不小于内衬12的内径。内衬12装入该适配器20中后，通过支撑部202进行竖直方向的支撑。通过利用支撑部202支撑内衬12，可以通过重力的作用使内衬12的底壁底面紧密贴合第二表面2012，从而可以提高传热效率。
可选的，通过固定部203的内侧壁与内衬12的外壁进行定位，保证两 者同轴设置。
在一个实施例中，如图3所示，冷却通道30包括设置在筒状主体201内部的第一通道301，该第一通道301在筒状主体201的周向上按预设分布方式环绕。冷却通道30的分布方式可以有多种，在本实施例中，第一通道301沿筒状主体201的周向环绕且呈环状，该第一通道301沿筒状主体201的轴向的一端(图3中朝下的一端)延伸至靠近支撑部202的位置处，以达到提高与衬底12的底壁的传热效率的目的。
第一通道301可以有多种加工方法，在一个实施例中，环形通道靠近支撑部202的一端贯通筒状主体201的底部，即，可以在筒状主体201上加工出开口朝下、呈凹槽状的环形通道，且在筒状主体201的底部还设置有环形封堵件205，该环形封堵件205与筒状主体201密封连接，用以密封上述环形通道。环形封堵件205与与筒状主体201例如采用焊接的方式密封连接，采用焊接的方式稳定可靠，不会出现泄漏的情况。
在另一个实施例中，如图4所示，冷却通道30还包括第二通道304，该第二通道304设置在支撑部202内部，且在支撑部202的周向上按预设分布方式环绕，并且，第二通道304与第一通道301相连通。借助第二通道304，可以进一步提高对内衬底部的冷却效率。
上述第一通道301与腔室外部的冷却源连接方式有多种，在一个实施例中，如图3和图5所示，冷却通道30还包括设置在固定部203中，用于供冷却媒介通入的入口通道302和用于供冷却媒介传出的出口通道302’，入口通道302和出口通道302’各自的一端均与第一通道301连通，入口通道302和出口通道302’各自的另一端均位于固定部203的位于腔室外部的表面上，例如，固定部203的外侧面。具体地，入口通道302和出口通道302’与筒状主体201的轴向相互垂直。
可选的，冷却通道30还包括设置在筒状主体201中的两个连接通道303， 两个连接通道303用于分别将入口通道302和出口通道302’与第一通道301相连通。可选的，两个连接通道303与筒状主体201的轴向相互平行，当然，在实际应用中，两个连接通道303也可以相对于筒状主体201的轴向倾斜。此外，在实际应用中，也可以不设置两个连接通道303，而将入口通道302和出口通道302’直接与第一通道301连通。
在冷却过程中，由冷却源提供的冷却介质(例如冷却水)依次通过入口通道302和与之连接一连接通道303进入第一通道301，然后再依次通过另一连接通道303和出口通道302’返回冷却源。在一个实施例中，入口通道302和出口通道302’并排设置在一起，当然，在实际应用中，入口通道302和出口通道302’也可以相对设置在内衬12的两侧。
在一个实施例中，在入口通道302和出口通道302’各自的另一端均设置有接头16，用以分别与冷却源的进流管路和回流管路连接。在实际应用中，可以采用焊接等连接方式并设置密封圈对于接头16进行连接、密封。
在另一个实施例中，如图6所示，入口通道302和出口通道302’相对于筒状主体201的轴向倾斜设置，并且入口通道302和出口通道302’的朝下倾斜的一端均与第一通道301连通，而朝上倾斜的一端位于固定部203的位于腔室外部的表面上，用以与冷却源连接。此外，对于倾斜的入口通道302和出口通道302’，也可以选择设置或者不设置上述两个连接通道303。
在实际应用中，冷却通道30的设置方式不限于上述实施例，根据冷却部位的需要而设置成不同的形式，在此不再赘述。
综上所述，本发明实施例提供的内衬冷却组件，其适配器中设置有冷却通道，且该适配器具有分别与内衬的外侧面和底壁底面相对的第一表面和第二表面，二者可以同时与内衬的侧面和底面进行热传导，这不仅可以提高传热效率，而且可以实现内衬的均匀冷却，避免内衬的局部温度过高，从而有效避免内衬因高温释放杂质，进而提高产品质量。而且，通过使第二表面与 内衬的底壁底面相接触，能够增加适配器与内衬之间的热接触面积，进一步提高传热效率，尤其是提高内衬底部的传热效率，从而可以改善位于内衬底部附近的晶片由于磁控溅射引起的升温现象，避免反应区域温度升高对晶片和薄膜的影响。另外，通过在适配器中设置冷却通道，可以减少加工步骤和难度、清洗难度以及由于增加冷却管路造成的拆装难度，同时适配器的结构简单、冷却效率高，无需密封圈对冷却管路的密封，减少了泄漏的风险。
在一个实施例中，如图2所示，本发明实施例还提供一种反应腔室，其包括腔体10和设置在该腔体10中的内衬12以及如上述任一实施例中的内衬冷却组件。
在一个实施例中，反应腔室包括磁控溅射反应腔室。当然，在实际应用中，反应腔室还可以为其他任意需要安装内衬的腔室。
另外，反应腔室还包括盖板13，内衬12的下端设置有用于支撑该盖板13的支撑结构，盖板13与内衬12构成一封闭的反应空间。
本发明实施例提供的反应腔室，其通过采用本发明实施例提供的上述内衬冷却组件，不仅可以提高传热效率，提高工艺质量，而且可以减少加工步骤和难度、清洗难度以及由于增加冷却管路造成的拆装难度。
在一个实施例中，本发明实施例还提供一种半导体加工设备，其包括反应腔室，该反应腔室如上述实施例中的反应腔室。
半导体加工设备例如为磁控溅射设备等的PVD设备。
本发明实施例提供的半导体加工设备，其通过采用本发明实施例提供的上述反应腔室，不仅可以提高传热效率，提高工艺质量，而且可以减少加工步骤和难度、清洗难度以及由于增加冷却管路造成的拆装难度。
上述本发明所公开的任一技术方案除另有声明外，如果其公开了数值范围，那么公开的数值范围均为优选的数值范围，任何本领域的技术人员应该理解：优选的数值范围仅仅是诸多可实施的数值中技术效果比较明显或具有 代表性的数值。由于数值较多，无法穷举，所以本发明才公开部分数值以举例说明本发明的技术方案，并且，上述列举的数值不应构成对本发明创造保护范围的限制。
同时，上述本发明如果公开或涉及了互相固定连接的零部件或结构件，那么，除另有声明外，固定连接可以理解为：能够拆卸地固定连接(例如使用螺栓或螺钉连接)，也可以理解为：不可拆卸的固定连接(例如铆接、焊接)，当然，互相固定连接也可以为一体式结构(例如使用铸造工艺一体成形制造出来)所取代(明显无法采用一体成形工艺除外)。
另外，上述本发明公开的任一技术方案中所应用的用于表示位置关系或形状的术语除另有声明外其含义包括与其近似、类似或接近的状态或形状。本发明提供的任一部件既可以是由多个单独的组成部分组装而成，也可以为一体成形工艺制造出来的单独部件。
以上实施例仅用以说明本发明的技术方案而非对其限制；尽管参照较佳实施例对本发明进行了详细的说明，所属领域的普通技术人员应当理解：依然可以对本发明的具体实施方式进行修改或者对部分技术特征进行等同替换；而不脱离本发明技术方案的精神，其均应涵盖在本发明请求保护的技术方案范围当中。
本发明的描述是为了示例和描述起见而给出的，而并不是无遗漏的或者将本发明限于所公开的形式。很多修改和变化对于本领域的普通技术人员而言是显然的。选择和描述实施例是为了更好说明本发明的原理和实际应用，并且使本领域的普通技术人员能够理解本发明从而设计适于特定用途的带有各种修改的各种实施例。

Claims (15)

  1. 一种内衬冷却组件，其特征在于，包括：
    适配器，所述适配器被设置为将内衬固定在腔室内，且所述适配器具有分别与所述内衬的外侧面和底壁底面相对的第一表面和第二表面，其中，所述第一表面与所述内衬的外侧面之间具有预设的间隙，所述第二表面与所述内衬的底壁底面相接触；并且，所述适配器中设置有用于传输冷却介质的冷却通道，用以对所述内衬进行冷却。
  2. 如权利要求1所述的内衬冷却组件，其特征在于，
    所述适配器包括环绕在所述内衬周围的筒状主体和与所述筒状主体连接，用于支撑所述内衬的底壁的支撑部；其中，所述筒状主体的内侧面用作所述第一表面；所述支撑部的与所述内衬的底壁底面相接触的表面用作所述第二表面；
    所述冷却通道设置在所述筒状主体内部，或者所述冷却通道设置在所述筒状主体和所述支撑部的内部。
  3. 如权利要求2所述的内衬冷却组件，其特征在于，
    所述冷却通道包括设置在所述筒状主体内部的第一通道，所述第一通道在所述筒状主体的周向上按预设分布方式环绕。
  4. 如权利要求3所述的内衬冷却组件，其特征在于，
    所述第一通道沿所述筒状主体的周向环绕且呈环状，所述第一通道沿所述筒状主体的轴向的一端延伸至靠近所述支撑部的位置处。
  5. 如权利要求4所述的内衬冷却组件，其特征在于，
    所述第一通道靠近所述支撑部的一端贯通所述筒状主体的底部，且在所 述筒状主体的底部还设置有环形封堵件，所述环形封堵件与所述筒状主体密封连接，用以密封所述第一通道。
  6. 如权利要求3所述的内衬冷却组件，其特征在于，所述冷却通道还包括设置在所述支撑部内部，且在所述支撑部的周向上按预设分布方式环绕的第二通道，所述第二通道与所述第一通道相连通。
  7. 如权利要求2所述的内衬冷却组件，其特征在于，所述支撑部的内径大于或等于所述内衬的内径。
  8. 如权利要求3所述的内衬冷却组件，其特征在于，所述适配器还包括与所述筒状主体的远离所述支撑部的一端连接的固定部，所述固定部用于与所述腔室固定连接；并且，所述冷却通道还包括设置在所述固定部中，用于供所述冷却媒介通入的入口通道和用于供所述冷却媒介传出的出口通道，所述入口通道和出口通道各自的一端均与所述第一通道连通，所述入口通道和出口通道各自的另一端均位于所述固定部的位于所述腔室外部的表面上。
  9. 如权利要求8所述的内衬冷却组件，其特征在于，
    所述入口通道和出口通道相对于所述筒状主体的轴向倾斜设置；或者，
    所述入口通道和出口通道与所述筒状主体的轴向相互垂直。
  10. 如权利要求9所述的内衬冷却组件，其特征在于，所述冷却通道还包括设置在所述筒状主体中的两个连接通道，两个所述连接通道用于分别将所述入口通道和出口通道与所述第一通道相连通。
  11. 如权利要求8所述的内衬冷却组件，其特征在于，
    在所述入口通道和出口通道各自的另一端均设置有接头，用以分别与进 流管路和回流管路连接。
  12. 如权利要求8所述的内衬冷却组件，其特征在于，
    所述固定部设置在所述腔室的侧壁与位于所述侧壁上方的绝缘件之间，且在所述固定部与所述腔室的侧壁之间，以及所述固定部与所述绝缘件之间均设置有密封圈。
  13. 一种反应腔室，包括腔体和设置在所述腔体中的内衬，其特征在于，还包括权利要求1-12任意一项所述的内衬冷却组件。
  14. 如权利要求13所述的反应腔室，其特征在于，所述反应腔室包括磁控溅射反应腔室。
  15. 一种半导体加工设备，包括反应腔室，其特征在于，所述反应腔室采用如权利要求13-14任意一项所述的反应腔室。
PCT/CN2020/072184 2019-01-23 2020-01-15 内衬冷却组件、反应腔室及半导体加工设备 Ceased WO2020151542A1 (zh)

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